A patch device and design method

Abstract

The application relates to a patch device and a design method, which comprises a workbench provided with a first opening, a carrier provided at a work plane and provided with a second opening, a limiting mechanism for fixing a wafer to be suspended, a feeding surface for placing a packaging substrate, a first displacement assembly for moving along the work plane, a pickup assembly provided with a suction accessory, an ejection mechanism arranged in a first accommodating space, the ejection mechanism comprising a movable ejection end and an abutting piece provided with a plurality of through holes, a plurality of ejector pins penetrating through the through holes for ejecting a die from below, wherein the end of the ejector pin is configured to enclose a support area with a contact point when a target pressure is applied to the suction accessory during a pressing stroke, and the area of the support area is not less than a required support area, so that the breakage problem caused by insufficient support during die suction is solved, the support and suction are cooperated, and the mounting reliability and adaptability are improved.

Description

Technical Field

[0001] The present invention relates to a patch device, and in particular to a patch device for wafer packaging and a design method thereof. Background Art

[0002] As integrated circuit packaging technology evolves toward miniaturization, high density, and high precision, wafer-level packaging (WLP) has gradually become the mainstream process. In this process, the bonding device, a key component for efficiently transferring the die to the packaging substrate after wafer dicing, directly impacts packaging efficiency and yield. Typically, after wafer dicing, the wafer remains attached to one side of a film (such as a blue film). The bonding device must separate each die from the film and precisely attach it to the pre-set packaging position. This places higher demands on the stability of the die support, as well as the precision and reliability of the separation process.

[0003] Most existing placement systems utilize a transfer strategy based on bottom-up ejection and top-down suction. In these systems, the wafer and its carrier film are placed on a support platform. An ejector mechanism applies force from below to partially lift the wafer, while a top pickup mechanism cooperates with suction to complete the transfer.

[0004] However, in existing die placement structures, the ejection process mostly uses a fixed number of ejector pins with a fixed spacing to support the die, which lacks the ability to adapt to different die sizes and changes in the upper adsorption structure. During the actual adsorption process, the upper surface of the die is subjected to downward pressure by the adsorption component. If the support area on the lower surface is insufficient or the force is uneven, it is very easy to cause local stress concentration on the die, leading to breakage or microcracks. Therefore, a new die placement device is urgently needed to solve the above problems. A structural design scheme that can automatically determine the support requirements based on the adsorption parameters and realize matching of the ejector pin layout can improve the adaptability of the die placement process and the integrity of the die. Summary of the Invention

[0005] The object of the present invention is to provide a chip placement device that overcomes the problem of damage or cracks to the die caused by the lack of matching between the ejector support structure and the pressure applied by the adsorption member during the die adsorption process.

[0006] The technical solution adopted by the present invention to solve the above-mentioned problem is: a chip placement device for transferring the die on the wafer adhered to one side of the diaphragm and completed to the packaging substrate, comprising:

[0007] A workbench, comprising a first accommodating space and a work plane, wherein the work plane is provided with a first opening;

[0008] a carrier, arranged at the working plane so that the wafer adhered to the membrane is in a suspended state;

[0009] A material moving mechanism, comprising:

[0010] An absorbing accessory, controlled movement, the absorbing accessory comprising an absorbing surface to generate negative pressure when the absorbing accessory is in a working state;

[0011] An ejection mechanism, disposed in a first accommodating space, the ejection mechanism comprising:

[0012] A second displacement assembly, comprising a second moving end controlled to move in a second plane, the second plane being parallel to the working plane;

[0013] An ejection assembly, disposed in the second moving end, the ejection assembly comprising:

[0014] An abutting member, comprising an abutting surface parallel to the working plane and a second accommodating space, a plurality of through holes being formed in the abutting surface and communicating with the second accommodating space;

[0015] An ejection end, disposed in the second accommodating space and controlled to move in the first direction;

[0016] A thimble, disposed on a side of the ejection end close to the through holes, the thimble penetrating the through holes, an end of the thimble away from the ejection end being configured to penetrate the through holes and move to outside of the ejection assembly when the ejection end is in an ejection state;

[0017] Wherein, when the absorbing accessory is attached to one side of the die and moves a preset stroke towards the die, to exert a target pressure on a side of the die away from the thimble, an area of a support area formed by the contact position of the thimble end and the die is greater than or equal to a required minimum support area according to the target pressure, the target pressure being determined by the material of the absorbing accessory and the preset stroke.

[0018] Preferably, the first opening communicates with the first accommodating space;

[0019] A feeding plane, controlled movement, the feeding plane being provided with a packaging site for placing a packaging substrate;

[0020] The carrier comprises a bearing surface parallel to the working plane, the bearing surface being provided with a second opening communicating with the first opening; the carrier further comprises a limiting mechanism for limiting a wafer adhered to a film at the second opening of the bearing surface;

[0021] The material moving mechanism further comprises a pickup assembly, controlled to move in a first plane parallel to the working plane, the pickup assembly comprising an absorbing end controlled to rotate and move in a first direction, the rotation axis of the absorbing end and the first direction being both perpendicular to the working plane.

[0022] Preferably, the number of the ejector pins and the number of the ejection ends are both several, each of the ejector pins is connected with each of the ejection ends one by one, and each of the ejection ends is independently controlled.

[0023] The support area is configured to increase the number of the ejector pins and reduce the distance between adjacent ejector pins when the target pressure increases.

[0024] Preferably, the number of the through holes is greater than the number of the ejector pins, and the ejection assembly further comprises:

[0025] several connecting pipes, one end of each of the connecting pipes is connected with one end of each of the through holes not penetrated by the ejector pins and away from the material moving mechanism;

[0026] a gas source, which is controlled to operate, and the other end of each of the connecting pipes is connected with the gas source.

[0027] Preferably, the patch device further comprises:

[0028] a first conveying mechanism, which comprises a feeding position, a discharging position, and a feeding plane arranged between the feeding position and the discharging position and controlled to move, the feeding plane is arranged in parallel with the working plane.

[0029] Preferably, the material moving mechanism further comprises:

[0030] a first displacement assembly, which comprises a first moving end controlled to move in a first plane parallel with the working plane, the first moving end is connected with the pickup assembly to drive the pickup assembly to move;

[0031] a third displacement assembly, which comprises a third moving end controlled to move in the first plane, a moving track of the third moving end is perpendicular to a moving track of the first moving end, and the first displacement assembly is arranged on the third moving end to move synchronously with the third moving end.

[0032] Preferably, the ejection mechanism further comprises:

[0033] a fourth displacement assembly, which comprises a fourth moving end arranged in the first accommodating space, the fourth moving end is controlled to move in the second plane, a moving track of the fourth moving end is perpendicular to a moving track of the second moving end, and the second displacement assembly is arranged on the fourth moving end to move synchronously with the fourth moving end.

[0034] Preferably, the suction end of the pickup assembly is configured to be driven to operate by a voice coil motor.

[0035] In particular, a design method for the above-mentioned patch device comprises the following steps:

[0036] Obtaining size parameters of the crystal grain, including length, width and thickness of the crystal grain towards the side of the ejection mechanism;

[0037] Obtaining the material of the suction accessory and the preset stroke, determining the target pressure applied by the suction accessory to the crystal grain in the working state based on the elastic modulus and structural resilience characteristics of the material of the crystal grain and the preset stroke;

[0038] According to the target pressure and the material characteristics of the crystal grain, the minimum support area required for the bottom surface of the crystal grain is obtained;

[0039] Taking the minimum support area as the support area, and according to the boundary range of the side of the crystal grain towards the ejection mechanism, the contact positions of the ends of the plurality of ejecting pins towards the material moving mechanism on the side of the crystal grain towards the ejection mechanism are planned, so that the support area enclosed by the connecting lines of the contact points between the ends of the plurality of ejecting pins and the crystal grain is not less than the minimum support area, and the support area is completely located in the range of the side of the crystal grain towards the ejection mechanism;

[0040] According to the number and relative positions of the contact points, the number of the required ejecting pins and the position distribution of the ejecting pins are determined.

[0041] Preferably, the step of obtaining the minimum support area required for the bottom surface of the crystal grain according to the target pressure and the material characteristics of the crystal grain comprises the following steps:

[0042] According to the material characteristics of the crystal grain, the upper limit of the unit area pressure that the crystal grain can withstand is obtained;

[0043] According to the target pressure and the pressure upper limit, the minimum support area is obtained.

[0044] The beneficial effects of the embodiments in the present application are as follows:

[0045] 1. Since the support area enclosed by the contact positions between the ends of the plurality of ejecting pins and the crystal grain is greater than or equal to the required support area obtained according to the target pressure of the suction accessory, and the target pressure is limited by the material of the suction accessory and the downstroke, the problem of cracking or micro-cracks of the crystal grain in the suction process due to insufficient support or uneven stress on the bottom of the crystal grain in the prior art is effectively solved, and the matching and cooperation between the support structure and the suction action in the patch process is realized, the stability and integrity of the wafer suction are improved, and the adaptability of the equipment to different crystal grain sizes and suction parameters is enhanced.

[0046] 2. Since the target pressure is determined based on the grain size, the material of the adsorption accessory and the preset stroke, combined with the characteristics of the grain material, the minimum support area is derived from the target pressure, and then the number of pins and the contact position distribution are planned according to the area, so that the problem of uneven stress on the wafer during the adsorption process and easy breakage caused by the inability to dynamically adjust the bottom support structure according to the adsorption load in the prior art is effectively solved, and the precise matching of the pin support structure and the adsorption condition is realized, and the adaptability of the grain under various size and material conditions and the stability of the mounting process are improved. BRIEF DESCRIPTION OF DRAWINGS

[0047] Figure 1 is a schematic top view of the inside of the patch device shown in a preferred embodiment of the present application.

[0048] Figure 2 is a schematic front view of the inside of the patch device shown in a preferred embodiment of the present application.

[0049] Figure 3 is a schematic structural view of the inside of the patch device shown in a preferred embodiment of the present application when the pick-up assembly is in a separated state.

[0050] Figure 4 is a schematic structural view of the ejector assembly shown in a preferred embodiment of the present application.

[0051] Figure 5 is a schematic sectional view of the ejector assembly shown in a preferred embodiment of the present application.

[0052] Figure 6 is a schematic structural view of the pin and the ejector end shown in a preferred embodiment of the present application when they are in a connected state.

[0053] Figure 7 is a schematic structural view of the patch device shown in a preferred embodiment of the present application.

[0054] Figure 8 is a flowchart of the design method of the patch device shown in a preferred embodiment of the present application.

[0055] Figure 9 is Figure 7 is a flowchart of each sub-step of step S300.

[0056] Wherein: 10, workbench; 110, first containing space; 120, work surface; 20, carrier; 210, bearing surface; 211, second opening; 220, limiting mechanism; 30, first conveying mechanism; 310, upper feeding position; 320, lower feeding position; 330, feeding plane; 40, material moving mechanism; 410, first displacement assembly; 420, picking-up assembly; 421, adsorption end; 430, adsorption part; 440, third displacement assembly; 50, ejection mechanism; 510, ejection assembly; 511, abutting piece; 5111, abutting surface; 5112, through hole; 512, ejection end; 513, ejector pin. DETAILED DESCRIPTION

[0057] The specific embodiments of the present application will be further described in conjunction with the drawings and examples. The following examples are used to illustrate the present application, but not to limit the scope of the present application.

[0058] In the description of the present application, it should be understood that the terms "center", "longitudinal", "transverse", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer" and the like indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, and are only used to facilitate the description of the present application and simplify the description, and do not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as limiting the scope of protection of the present application. In addition, the terms "first", "second" and the like are only used for description purposes and cannot be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, the features defined with "first", "second" and the like can explicitly or implicitly include one or more of the features. In the description of the present application, unless otherwise specified and limited, the term "a plurality of" means two or more.

[0059] In the description of the present application, it should be noted that unless otherwise specified and limited, the terms "mounting", "connecting", "connection" should be understood broadly, for example, it can be fixed connection, or detachable connection, or integral connection; it can be mechanical connection, or electrical connection; it can be direct connection, or indirect connection through intermediate medium, or internal communication of two elements. For those skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.

[0060] Reference is made to Figures 1-7In a preferred embodiment of the present application, a patch device is provided for transferring die on a wafer adhered to one side of a film and singulated to a package substrate. The patch device is suitable for automatic die attachment in wafer level packaging processes and is suitable for installation in a packaging apparatus having precision control capabilities and is suitable for operation in a clean environment having constant temperature, constant humidity, and no vibration.

[0061] The patch device comprises a workbench 10, a carrier 20, a first conveying mechanism 30, a material moving mechanism 40 and an ejection mechanism 50.The workbench 10 comprises a first accommodating space 110 and a work plane 120 parallel to a horizontal plane, and a first opening is formed in the work plane 120 and communicates with the first accommodating space 110; the carrier 20 is arranged at the work plane 120, and the carrier 20 comprises a bearing plane 210 parallel to the work plane 120, and a second opening 211 is formed in the bearing plane 210 and communicates with the first opening; the carrier 20 further comprises a limiting mechanism 220 for limiting a wafer adhered to a film at the second opening 211 of the bearing plane 210, so that the wafer adhered to the film is arranged in a suspended manner; the first conveying mechanism 30 comprises a feeding position 310, a discharging position 320 and a feeding plane 330 arranged between the feeding position 310 and the discharging position 320 and controlled to move, and an encapsulation position is arranged on the feeding plane 330, and an encapsulation substrate is arranged on the encapsulation position; the material moving mechanism 40 comprises a first displacement assembly 410, a pickup assembly 420 and a suction accessory 430, wherein the first displacement assembly 410 comprises a first moving end controlled to move in a first plane parallel to the work plane 120, the pickup assembly 420 is connected with the first moving end to move with the first moving end, the pickup assembly 420 comprises a suction end 421 controlled to rotate and move in a first direction, the rotation axis of the suction end 421 and the first direction are both perpendicular to the work plane 120, and the suction accessory 430 is arranged at the suction end 421 and comprises a suction surface, and the suction accessory 430 is controlled to generate negative pressure at the suction surface; the ejecting mechanism 50 is arranged in the first accommodating space 110, and the ejecting mechanism 50 comprises a second displacement assembly and an ejecting assembly 510, wherein the second displacement assembly comprises a second moving end arranged in the first accommodating space 110 and controlled to move in a second plane parallel to the work plane 120, the ejecting assembly 510 is arranged on the second moving end, and the orthogonal projection of the moving track of the ejecting assembly 510 on the work plane 120 is located in the range of the orthogonal projection of the second opening 211 on the work plane 120, and the ejecting assembly 510 comprises an abutting piece 511, an ejecting end 512 and a plurality of ejecting pins 513, wherein the abutting piece 511 comprises an abutting surface 5111 parallel to the work plane 120 and a second accommodating space, a plurality of through holes 5112 are formed in the abutting surface 5111 and communicate with the second accommodating space, the ejecting end 512 is arranged in the second accommodating space and controlled to move in the first direction, the ejecting pins 513 are arranged on one side of the ejecting end 512 close to the through holes 5112 and pass through the through holes 5112, and one end of the ejecting pins 513 away from the ejecting end 512 is configured to pass through the through holes 5112 and move to the outside of the through holes 5112 when the ejecting end 512 is in an ejecting state.And, the ejector pin 513 is configured to, when the suction accessory 430 is attached to one side of the die and moves towards the die at a preset stroke to apply a target pressure to the side of the die away from the ejector pin 513, the contact position of the end of the ejector pin 513 and the die encloses a support area with an area greater than or equal to the required support area according to the target pressure; the target pressure is jointly defined by the material of the suction accessory 430 and the preset stroke.

[0062] Specifically:

[0063] The workbench 10 is provided with a first accommodating space 110 and a work plane 120 parallel to the horizontal plane, and a first opening is arranged in the middle of the work plane 120 to form a through space. The carrier 20 is installed on the work plane 120 and is provided with a bearing surface 210 parallel to the work plane 120, and a second opening 211 is arranged in the bearing surface 210 and communicates with the first opening. The bearing surface 210 is provided with a limiting mechanism 220. The limiting mechanism 220 is used to fix the wafer at the edge of the second opening 211, so that the wafer is in a suspended state, thereby providing space for the upward operation of the ejecting mechanism 50.

[0064] The first conveying mechanism 30 includes an upper feeding position 310, a lower feeding position 320, and a feeding plane 330 arranged therebetween. The feeding plane 330 can move horizontally under the control of a control command. The packaging substrate is placed in a packaging position on the feeding plane 330 and moves to the packaging substrate along with the feeding plane 330, waits for the material moving mechanism 40 to transfer the die to the packaging substrate to perform die attachment.

[0065] The material moving mechanism 40 is used to realize the transfer operation of the die from the blue film to the packaging substrate, and includes a first displacement assembly 410, a pickup assembly 420, and a suction accessory 430. The first displacement assembly 410 includes a movable end that can move in a plane, and the pickup assembly 420 is connected to the movable end and can move with the plane. The suction end 421 of the pickup assembly 420 can rotate around a vertical shaft and can move up and down in the vertical direction. The suction accessory 430 is arranged at the suction end 421, and the suction surface thereof generates negative pressure under control to suck the die. The movement stroke of the suction end 421 is preset and can be accurately controlled.

[0066] The ejecting mechanism 50 is arranged in the first accommodating space 110 below the workbench 10, and includes a second displacement assembly and an ejecting assembly 510. The second displacement assembly can drive a second moving end mounted thereon to move in a direction parallel to the work plane 120. The ejecting assembly 510 is arranged on the moving end, and the orthographic projection of the moving track of the ejecting assembly 510 is always located in the orthographic projection of the second opening 211 of the work plane, so as to ensure that the ejector pin 513 is accurately aligned with the target die. The ejecting assembly 510 includes an abutting member 511, the upper surface of the abutting member 511 is an abutting surface 5111 parallel to the work plane 120, the inside of the abutting member 511 is a second accommodating space, and a plurality of through holes 5112 are uniformly distributed on the abutting surface 5111. An ejecting end 512 is arranged in the second accommodating space and can move up and down in the vertical direction under control. A plurality of ejector pins 513 are arranged on the side of the ejecting end 512 close to the through holes 5112, each ejector pin 513 is arranged in a corresponding through hole 5112, and when the ejecting end 512 moves upward to an ejecting state, the end of each ejector pin 513 away from the ejecting end 512 can pass through the through hole 5112 and protrude out of the abutting surface 5111.

[0067] In the operation process, when the suction member 430 is attached to the top of the die and compressed downward to a preset stroke, a certain target pressure is applied to the top of the die. In order to prevent the die from being damaged due to downward compression, the ejector pins 513 in the ejecting mechanism 50 are arranged on the bottom surface of the die as needed, and the support area enclosed by the contact points of the ejector pins 513 has an area not less than the minimum support area required to withstand the target pressure. The size of the target pressure is determined according to the material and stroke of the suction member 430, so the design of the support area can be dynamically adjusted according to the size of the die and the suction condition. After the initialization of the device or the update of the die parameters, the control system automatically calculates the target support area according to the suction condition, and adjusts the number and distribution position of the ejector pins 513 to ensure mechanical matching.

[0068] The die bonding device is suitable for automatic die bonding processes of various sizes of dies, can be operated with high stability in a clean room, and can cover the conventional packaging production conditions in the working temperature range, and is suitable for different sizes of blue films or wafers.

[0069] In this embodiment, the support area of the die is dynamically determined based on the suction parameters, and the support area is enclosed by the plurality of ejector pins 513, so that the technical problem that the die is easily damaged due to insufficient support or uneven stress in the suction process in the prior art is effectively solved, and the cooperation between the suction structure and the support structure in the die bonding process is realized, and the integrity of the die suction, the stability of the die bonding process and the adaptability of the device to various packaging conditions are improved.

[0070] Further, in some embodiments, the number of the ejector pins 513 and the number of the ejector ends 512 are both several (not shown in the figure), each of the ejector pins 513 is connected to each of the ejector ends 512 one by one, and each of the ejector ends 512 is independently controlled; the support area is configured to increase the number of the ejector pins 513 and reduce the distance between adjacent ejector pins 513 when the target pressure increases, so that the support area meets the mechanical support conditions required by the die under the action of the target pressure.

[0071] Specifically:

[0072] The ejecting mechanism 50 is provided as a plurality of independently controlled ejecting units, each of which includes an ejector end 512 and a corresponding ejector pin 513, the ejector ends 512 are independent of each other, and each ejector pin 513 is arranged in a corresponding through hole 5112 to realize independent driving control of a plurality of support points. Each ejector end 512 can act independently under the driving of the control system, so that its corresponding ejector pin 513 passes through the through hole 5112 to locally support a specific position at the bottom of the die.

[0073] In the specific working process, the control system first calculates the minimum support area required by the die during the adsorption process according to the size of the die, the material properties, and the target pressure parameters of the current adsorption accessory 430. The system further dynamically selects an appropriate number of ejector ends 512 to participate in action according to the support area, combined with the geometric size and support capacity of the ejector pin 513. The greater the target pressure, the more the number of ejector ends 512 allocated to participate in the ejection, and the spacing between the ejector pins 513 is correspondingly reduced, thereby forming a more intensive distribution of support points to meet the higher mechanical stability required by the die under the condition of increasing pressure.

[0074] In the device response process, each ejector end 512 receives control instructions through an independent channel and can quickly respond to changes in different die positions, structures, or stress requirements. When the device processes dies of different sizes, materials, or shapes, the control system can update the support strategy in real time to realize the reconstruction of the support area under multiple sizes and working conditions. This structure is especially suitable for packaging application scenarios such as special-shaped dies and fragile chips that have higher requirements for stress uniformity.

[0075] The device is suitable for high-precision automatic patching processes, especially for working in clean room environments and precision electronic manufacturing lines with strict temperature and humidity control. The device body structure is modular, has strong adaptability, and can be installed on various die mounting platforms and integrated with industrial vision systems or motion control platforms.

[0076] In this embodiment, the independent control of the multiple ejection ends 512, the dynamic adjustment of the number of the ejector pins 513, and the variable spacing technique are adopted, so that the problem that the fixed support structure in the prior art cannot adapt to different adsorption pressure changes, resulting in stress concentration of the crystal grains in the high-pressure adsorption process and insufficient support, is effectively solved, and the real-time response of the support structure to the target pressure change is realized, the mechanical stability of the crystal grain adsorption process is improved, and the self-adaptive ability of the patch equipment to various crystal grain specifications and process conditions is enhanced.

[0077] In order to optimize the recovery process of the ejector pins 513 after the crystal grains complete the adsorption and transfer, and reduce the demolding resistance caused by the adhesion of the diaphragm during the recovery of the ejector pins 513, the ejection assembly 510 is additionally provided with an auxiliary gas release structure on the basis of the original structure. The number of the through holes 5112 is greater than the number of the ejector pins 513, and the ejection assembly 510 further includes a plurality of connecting pipes and a gas source. One end of the connecting pipe is connected with the end of the through hole 5112 not penetrated by the ejector pin 513 and away from the material transfer mechanism 40. The gas source is controlled to operate, and the other end of the connecting pipe is connected with the gas source.

[0078] Specifically,

[0079] The number of the through holes 5112 on the abutment 511 is greater than the number of the ejector pins 513, and in each crystal grain ejection operation, part of the through holes 5112 are not penetrated by the ejector pins 513. The ejection assembly 510 further includes a plurality of connecting pipes and a gas source. One end of the connecting pipe is connected with the bottom of the through hole 5112 not penetrated by the ejector pin 513, and the other end is connected with the gas source. The gas source is controlled to operate, and the compressed gas can be introduced into the connecting pipe at a preset time.

[0080] After the crystal grain adsorption is successful, the ejector pins 513 start to be recovered downward below the abutment surface 5111, and at the same time, the gas source is started to deliver gas into the through holes 5112 not penetrated by the ejector pins 513. The generated gas flow is sprayed from the upper end of the through hole 5112 and acts on the gap between the bottom surface of the diaphragm and the abutment surface 5111. In this process, a local counter-pressure area is formed, the adhesion of the diaphragm surface to the end of the ejector pin 513 is reduced, the diaphragm is easily separated naturally, and the deformation or tearing of the diaphragm caused by the surface pulling due to the negative pressure adsorption or the retraction of the ejector pin 513 is prevented.

[0081] The structure and the operation are coordinated by the control system. When the adsorption accessory 430 confirms that the crystal grain adsorption is completed and is ready to be transferred, the gas supply of the gas source is automatically triggered, and the recovery of the ejector pins 513 is automatically triggered, so as to ensure that the diaphragm is quickly detached and the equipment is synchronously operated. The above control strategy can be realized by a preset time logic or a feedback sensing device to realize precise control.

[0082] The structure is suitable for packaging process scenes of high-viscosity blue film or thin film material, especially for packaging and transferring equipment of low-thickness wafers and brittle material dies.

[0083] In the embodiment, the structure design means of releasing airflow through the through hole 5112 without the needle 513 is adopted to assist the film detachment, thereby effectively solving the problems of film adhesion, pullback and local tearing in the needle 513 recovery process in the prior art, and realizing the process cooperation of needle 513 retraction and film smooth separation, improving the stability and film protection ability of the patch device under high-speed continuous operation conditions, and improving the operation efficiency and yield of the whole machine.

[0084] To improve the movement freedom of the material moving mechanism 40 in the horizontal plane and expand the pickup range, in some embodiments, the material moving mechanism 40 further includes a third displacement assembly 440 including a third moving end controlled to move in the first plane, the moving track of the third moving end being perpendicular to the moving track of the first moving end, and the first displacement assembly 410 being arranged on the third moving end to move synchronously with the third moving end.

[0085] Specifically:

[0086] The third moving end can move reciprocally and linearly in a direction in the first plane, and the first moving end can move independently in a direction perpendicular to the third moving end, and the two superimposed form two-dimensional plane control of any point position, which is suitable for accurately moving the pickup assembly 420 to any target die directly above. The pickup assembly 420 realizes precise bonding and adsorption of the die through the vertical movement of the adsorption end 421. The above structure realizes high freedom and high precision displacement control in a limited space through the cooperation of the double-layer moving platform.

[0087] In actual operation, the control system controls the third moving end and the first moving end respectively, sequentially plans and dynamically adjusts the movement according to the set die coordinate information, accurately aligns the pickup assembly 420 to the target die, and completes the adsorption, extraction, transfer and other operations. The structure can effectively expand the pickup coverage area without increasing the equipment area, and is especially suitable for large-diameter wafer or high-density arrangement working conditions.

[0088] The structure is suitable for full-automatic packaging equipment for medium and large wafer transfer operations, and is especially suitable for production scenes with limited space layout but high bonding accuracy. In terms of environment, the mechanism can stably operate in a constant-temperature clean environment, has anti-shock and dynamic compensation capabilities, and can be integrated on an existing horizontal motion platform or multi-axis system.

[0089] In the embodiment, the third displacement assembly 440 is arranged orthogonally and superimposed with the first moving end, so that the problem that the pickup assembly 420 in the prior art is limited in the horizontal moving direction and cannot flexibly cover the large-size wafer area is effectively solved, and multi-axis decoupling of the pickup path and displacement precision improvement are realized, and the flexibility and stability of the patching device under the condition of high-density packaging are enhanced.

[0090] In a further embodiment, in order to improve the accessibility of the ejection mechanism 50 in the lateral range and realize flexible alignment support of the die area, the ejection mechanism 50 further comprises a fourth displacement assembly. The fourth displacement assembly is arranged in the first accommodating space 110 and comprises a fourth moving end, which is controlled to move in the second plane and the moving track thereof is perpendicular to the moving track of the original second moving end. The second displacement assembly is mounted on the fourth moving end and moves synchronously with the fourth moving end, thereby forming a composite motion structure in a two-dimensional plane.

[0091] Specifically,

[0092] The second displacement assembly drives the ejection assembly 510 to move in one direction through the driving mechanism thereof, and the fourth moving end moves in another direction through the fourth displacement assembly thereof. The superimposition of the two realizes the lateral free movement of the ejection mechanism 50 below the working plane 120, and the abutting piece 511, the ejection end 512 and the plurality of ejecting pins 513 arranged in the ejection assembly 510 can reach a wider range of positions below the wafer for supporting the dies located at different positions.

[0093] In the actual working process, the control system dynamically controls the fourth displacement assembly and the second displacement assembly according to the spatial distribution coordinates of the dies, so that the ejection assembly 510 moves to the target position below the corresponding die. Then the ejection end 512 moves vertically, and the plurality of ejecting pins 513 are penetrated out of the through hole 5112, thereby realizing the bottom support of the target die. When the support is completed and the upper suction member 430 completes the suction, the ejection end 512 retracts the ejecting pins 513, the fourth displacement assembly drives the entire ejection structure to move to the support position of the next die, and continuous support operation is performed.

[0094] The structure is suitable for patching processes of large-size wafers, high matrix arrangement density or uneven distribution of support sites, and is particularly suitable for packaging equipment environments with high demand for dynamic support range adjustment. The overall structure of the device has high modularity and can be integrated in various industrial control platforms for operation, and is suitable for precision device production lines in clean rooms and constant temperature and humidity environments.

[0095] In this embodiment, by adopting the technical means of orthogonal arrangement and linkage control between the fourth displacement assembly and the second displacement assembly, the problem that the ejection mechanism 50 in the prior art can only move in a single direction and is difficult to flexibly support the distributed position of the unsecured wafer is effectively solved, thereby realizing precise coverage of the support area in a larger range below the wafer and improving the adaptability and support efficiency of the device in a high-density arrangement environment.

[0096] To improve the response speed and motion accuracy of the pickup assembly 420 in the vertical direction and make it adapt to the high-tact, high-density wafer mounting requirements, in some embodiments, the suction end 421 of the pickup assembly 420 is configured to be driven to operate by a voice coil motor. As a kind of linear driving device, the voice coil motor has the characteristics of compact structure, high acceleration, and fast positioning response, and is suitable for the mounting process with high requirements for displacement accuracy and frequency.

[0097] Specifically:

[0098] The suction end 421 is connected to the mover of the voice coil motor through a support frame, and the stator is fixedly installed on the main structural frame of the pickup assembly 420. The voice coil motor drives the mover to drive the suction end 421 to move precisely in the vertical direction by controlling the electromagnetic force between the coil and the permanent magnet. The suction end 421 is provided with a suction surface, and negative pressure can be applied at the suction surface after reaching the target position to realize wafer suction.

[0099] In the working process, the control system issues a displacement instruction to drive the voice coil motor according to the actual height coordinates of the wafer and the current mounting task requirements, so that the suction end 421 completes the pressing, fitting and lifting actions in a very short time. The acceleration-deceleration curve, motion stroke and acceleration value in this action process can be adjusted in real time through software, so as to adapt to the requirements of different wafer thicknesses, suction pressures and process beats.

[0100] The voice coil motor driving mode has the advantages of no mechanical contact, no reverse gap and no commutation noise, and at the same time, due to its structure without physical friction, it maintains stability and life advantage in high-frequency reciprocating motion, especially suitable for continuous high-speed operation environment. This configuration is suitable for packaging lines with high-speed mounting requirements, especially in fast point-to-point suction or low-vibration displacement scenarios.

[0101] In terms of applicable environment, this structure can be integrated on a full-automatic mounting platform and is suitable for running in a packaging production environment with high cleanliness and constant temperature and humidity. The voice coil motor system can form a closed-loop control system through a servo controller, an encoder, etc., to realize displacement control accuracy of millimeter to micrometer.

[0102] The embodiment effectively solves the problems of slow response, large inertia and inaccurate positioning of the adsorption end 421 in the prior art by adopting the technical means of driving the adsorption end 421 by the voice coil motor, thereby realizing fast response and accurate control of the pickup assembly 420 in high-frequency and high-speed adsorption operation, improving the wafer transfer efficiency, positioning accuracy and overall work rhythm of the device, and adapting to the process requirements of high-performance semiconductor packaging.

[0103] In some embodiments, referring to Figure 8 A design method for the above-mentioned patch device, characterized by comprising the following steps:

[0104] Step S100: Obtain the size parameters of the wafer, including the length, width and thickness of the wafer towards the side of the ejection mechanism 50;

[0105] Step S200: Obtain the material of the adsorption member 430 and the preset stroke, determine the target pressure applied by the adsorption member 430 to the wafer in the working state based on the elastic modulus and structural resilience characteristics of the wafer material and the preset stroke;

[0106] Step S300: According to the target pressure and the material properties of the wafer, the minimum support area required for the bottom surface of the wafer is obtained;

[0107] Step S400: Take the minimum support area as the support area, and according to the boundary range of the wafer towards the side of the ejection mechanism 50, plan the contact positions of the ends of the plurality of ejecting pins 513 towards the side of the wafer towards the ejection mechanism 50, so that the support area enclosed by the contact points of the ends of the plurality of ejecting pins 513 is not less than the minimum support area, and the support area is completely located in the range of the wafer towards the side of the ejection mechanism 50;

[0108] Step S500: According to the number and relative position of the contact points, determine the number of the plurality of ejecting pins 513 required and the position distribution of the plurality of ejecting pins 513.

[0109] Among them, the step S100 obtains the size parameters of the wafer, including the length, width and thickness of the wafer towards the side of the ejection mechanism 50, and the size parameters of the wafer, i.e. the length, width and thickness of the wafer towards the side of the ejection mechanism 50, can be realized by the following way:

[0110] On the one hand, for the standard wafer size information predictable in the batch wafer processing process, the information can be directly extracted from the packaging process design file or manufacturing data. The information usually comes from the wafer cutting arrangement diagram or product structure specification, and is preset by the upstream process platform, which has fixedness and repeatability.

[0111] On the other hand, for the crystal grains that may have slight size deviations in actual production, the system can be configured with an industrial vision measurement module or a laser displacement sensor to realize online size detection of the crystal grains. The vision module is installed above the suction end 421 or the workbench 10, and the contour boundary of a single crystal grain is extracted through an image recognition algorithm to obtain the length and width of the crystal grain towards the side of the ejection mechanism 50. The laser displacement sensor is installed on the picking path, and can scan the distance difference between the upper surface of the crystal grain and the surface of the film before suction to calculate the actual thickness of the crystal grain.

[0112] After obtaining the above data, the system controller converts it into standardized parameters and inputs it into the support structure calculation model as basic data for subsequent target pressure calculation and ejector pin 513 distribution planning. If there are non-standard crystal grains or deviations after wafer cutting, the system can also trigger a parameter correction process through a feedback mechanism to ensure that the support design adapts to the actual crystal grain state.

[0113] The target pressure in step S200 refers to the normal pressure actually acting on the crystal grain by the suction member 430 in the working state (i.e., when the suction member 430 is in contact with the crystal grain and completes the preset stroke of the suction action). The target pressure is determined by the material stiffness (elastic modulus) of the suction member 430 itself, the structure shape, the downward stroke, and the contact deformation behavior of the crystal grain. In the implementation process of the present application, the target pressure can be calculated by the following method:

[0114] Based on the mechanical calculation method of the deformation model of the flexible structure under pressure, the suction member 430 is usually a suction head or a suction disc made of flexible material (such as silicone, polyurethane, etc.), which can be simplified as an approximate elastic body structure. According to Hooke's law, the target pressure P can be calculated by the following relationship: . Wherein, is the pressure applied by the suction member 430 to the crystal grain at the end of the downward stroke (unit: Newton); is the equivalent stiffness of the suction member 430 (unit: Newton / meter), which can be derived from the elastic modulus E of the material and the geometric shape of the suction structure (such as the thickness, bottom area, and cross-sectional shape of the suction disc), is the preset downward stroke (unit: meter), which is the maximum vertical compression displacement of the suction member 430 from the initial position to the complete contact with the crystal grain.

[0115] Equivalent Stiffness can be calculated as follows: . Wherein, is the elastic modulus of the material of the suction member 430 (unit: Pa); is the effective contact area of the suction surface (unit: square meter); is the effective stress thickness or deformation height of the suction structure (unit: meter). Substituting the above formula, the target pressure is expressed as: The formula is applicable to an ideal elastic adsorption structure, and in actual applications, the parameters can be corrected according to experimental calibration.

[0116] In combination with the correction mechanism of the grain rebound characteristics, since the grain itself is a brittle material, the deformation is very small during the pressure process, but part of the material will still have slight rebound or displacement, and the relative travel between the adsorption structure and the grain needs to be corrected. The actual action travel can be defined as: wherein Δ is the vertical compression displacement of the grain under the expected pressure, which can be estimated by simulation or literature data, and is generally much smaller than the compression displacement of the adsorption member 430; and δ' is the travel of the adsorption member 430 that actually produces compression deformation, which is finally used to calculate the target pressure.

[0117] In the present embodiment, the target pressure is obtained based on the elastic deformation of the adsorption member 430 within the set down pressure travel. The material of the adsorption member 430 is a flexible elastic body, and the down pressure process can be regarded as an approximate elastic compression behavior. The system first calculates the equivalent stiffness of the adsorption member 430 according to the elastic modulus of the material, the effective contact area and the structure thickness, and then combines the preset down pressure travel to calculate the target pressure finally applied to the surface of the grain by using the elastic mechanics model. At the same time, in order to correct the influence of the weak deformation of the grain material on the travel, the down pressure travel can be differentially corrected based on the grain rebound characteristics, so as to improve the accuracy of the pressure estimation.

[0118] Referring to Figure 9 , the step S300 of obtaining the minimum support area required by the bottom surface of the grain according to the target pressure and the material characteristics of the grain includes the following steps:

[0119] Step S310: obtaining the upper limit of the unit area pressure that the grain can withstand according to the material characteristics of the grain;

[0120] Step S320: obtaining the minimum support area according to the target pressure and the upper limit of the pressure.

[0121] In the step S310, the upper limit of the unit area pressure that the grain can withstand is obtained according to the material characteristics of the grain, and the obtaining method is as follows:

[0122] Firstly, the theoretical estimation method based on material parameters can be used. The grain is usually composed of brittle materials such as silicon, gallium arsenide and gallium nitride, and the rupture of the structure under external force is mainly manifested as brittle fracture or crack propagation. The upper limit of the unit area pressure that can be withstood is approximately equal to the safe use limit of the compressive strength or the bending strength. The estimation method is as follows:

[0123] Inquiring a material manual or literature to obtain the compressive strength σc or the bending strength σb of the material used by the grain;

[0124] According to the safety factor K (usually a fixed empirical value, such as an integer constant), the correction is performed: The obtained σmax is the upper limit of the unit area pressure that the crystal grain can withstand without damage, and the unit is pascal.

[0125] Secondly, the simulation modeling method can be based on. For special-shaped crystal grains or special packaging structure crystal grains, finite element simulation modeling method can also be used for stress simulation, and the process is as follows:

[0126] A three-dimensional structure model of the crystal grain is established, and the boundary conditions and material properties thereof are defined;

[0127] A uniform surface pressure in the vertical direction is applied, and the loading value is gradually increased, and the critical point at which the structure is deformed obviously or the local stress is suddenly changed is recorded;

[0128] The critical pressure value is divided by the loading area to obtain the corresponding unit area pressure upper limit value.

[0129] This method is suitable for chip structures with complex structures or cavities, metal layer nesting and the like, and can improve the design pertinence.

[0130] Finally, a data table based on measurement or experience method can also be established. In the mass production process, a process test database can be established, the damage threshold of different materials and different size crystal grains in the actual loading process is recorded through sample pressure damage experiment, and a "crystal grain type-maximum pressure" table is established. In actual use, the maximum pressure upper limit value of the corresponding material and size combination can be directly called.

[0131] In summary, in the embodiment, the upper limit of the unit area pressure that the crystal grain can withstand can be obtained in the following ways: one is to obtain the pressure strength or bending strength of the material to which the crystal grain belongs according to the experience safety factor; two is to simulate and analyze the deformation critical value of the crystal grain structure under the vertical direction loading through finite element simulation; three is to obtain the maximum allowable surface pressure by querying the pressure damage threshold of the same type of crystal grain through packaging test process or experience database. The value will be used as a mechanical benchmark to judge whether the crystal grain is safe under the target pressure.

[0132] The minimum support area in step S320 refers to the minimum effective support area that the crystal grain needs to provide at the bottom to withstand the target pressure applied by the suction member 430 during the suction process. The calculation method is based on the basic mechanics relationship, and the specific method is as follows: when the suction member 430 acts on the top of the crystal grain with a set target pressure P, the bottom of the crystal grain must have a large enough support area, so that the unit area pressure it withstands does not exceed the pressure upper limit σmax of the crystal grain material, otherwise the crystal grain will be broken or stress cracks will be generated.

[0133] To meet this condition, the support area Amin should satisfy the following relationship: .

[0134] in:

[0135] The target pressure (in Newtons) applied by the adsorption member 430 during the set downward stroke;

[0136] is the minimum required support area in square meters.

[0137] In summary, in the specific implementation process, obtaining the target pressure , which is usually derived from the calculation results of the material stiffness of the adsorption member 430 and the preset parameters of the downward stroke. Obtain the upper limit of the pressure of the grain material , whose value can be obtained through material mechanical parameters or fracture test experience.

[0138] Substitute the two into the above formula for calculation, namely: , income That is, the area of ​​the bottom of the die that needs to be supported by the ejector pins 513 at least, which is used for the subsequent ejector pin 513 layout design.

[0139] In this embodiment, the minimum support area is determined based on the physical relationship between the target pressure applied to the die and the upper pressure limit of its material. By dividing the target pressure by the upper pressure limit of the die material, the minimum support area required on the die's bottom surface is calculated to ensure that the die does not suffer structural damage due to insufficient bottom support during adsorption and downward pressure. This area serves as a structural input parameter for planning the placement of ejector pins 513, used to determine the number and distribution range of ejector pins 513.

[0140] The core purpose of step S400 is to reasonably arrange the contact points of the ejector pins 513 under the premise of meeting the boundary restrictions of the grain structure size, so that the enclosed support area meets the minimum support area requirement and is ensured to be completely within the bottom surface of the grain.

[0141] The input conditions come from the previous step, including the known dimensions (length and width) of the die facing the ejection mechanism 50; the calculated minimum support area; the known geometric boundaries of the die bottom surface (rectangular, polygonal, or irregular area); and structural constraint parameters such as the range of optional ejector pins 513 numbers, the end dimensions of a single ejector pin 513, the minimum distance between ejector pins 513, and the minimum spacing between ejector pins 513.

[0142] The following is a detailed implementation method, which is the process of planning the support point layout:

[0143] First, a two-dimensional coordinate system is established with the bottom surface of the die as a reference. The boundary projection area of ​​the die facing the ejection mechanism 50 is used as the design boundary for limiting the point arrangement.

[0144] Secondly, select the initial layout strategy. According to the shape and size of the crystal grain, select the appropriate initial layout strategy, common strategies include but are not limited to rectangular edge symmetric layout (suitable for regular crystal grains), diagonal cross layout, ring layout, rice-shaped or honeycomb-shaped layout (suitable for larger crystal grains or high pressure support requirements), and multi-row and multi-column uniform distribution strategy (suitable for large area and uniform force distribution requirements).

[0145] Next, judge the support area. The system calculates the polygon area formed by connecting all the contact points of the end of the probe 513 under the current layout mode, and records it as the actual support area. Standard calculation methods (such as polygon area calculation formula, convex hull algorithm, etc.) can be used to solve the area. If the actual support area is greater than or equal to the minimum support area obtained in the previous step, it is considered that the layout meets the requirements.

[0146] Then, support area boundary verification. Judge whether the support area formed by the connection is completely located within the range of the crystal grain bottom surface. If there is an overflow part, adjust the contact point distribution to converge inward and recalculate the area.

[0147] Finally, iterative optimization. If the support area is insufficient or the support area does not meet the boundary conditions, the system optimizes in the following ways:

[0148] Increase the number of probes 513 or reduce the distance between adjacent probes 513 or change the arrangement strategy (such as changing from a rectangle to a "rice" shape) or adjust the position of the contact point locally to avoid boundary interference.

[0149] Until the cycle is performed to meet the area condition and the area is complete.

[0150] In this embodiment, according to the boundary range of the crystal grain towards the ejection mechanism 50 side and the minimum support area obtained in the previous step, a two-dimensional coordinate reference system of the crystal grain bottom surface is established, and the position of the contact point of the end of the probe 513 is planned within the range. Each contact point is connected by a geometric line to form a support area, and the area of the support area should be greater than or equal to the required minimum support area and completely located within the boundary of the crystal grain bottom surface. The layout planning process can be based on standard shape strategies (such as rectangle, diagonal, ring or rice shape) to make initial layout, and combined with area calculation and boundary verification to realize automatic optimization. The final output of the layout scheme for determining the number and accurate position of the probe 513 is used as the basis for subsequent device structure parameter configuration.

[0151] The purpose of step S500 is to further determine the specific number of probes 513 required on the basis of the contact points of the probes 513 that meet the minimum support area, and to map these contact points to the position distribution of the probes 513 in the actual structure as the basis for device design or dynamic control configuration.

[0152] The input conditions include that the support area has been obtained in step S400; the contact point coordinates of the end of each ejector pin 513 have been confirmed; the arrangement form of the through holes 5112 on the abutting member 511 is known (such as a regular grid, a ring arrangement, a free arrangement, etc.); the specifications, end size, minimum installation spacing, and structural interference limit of the ejector pin 513; and whether a variable number of ejector pins 513 (partially movable / partially fixed) is allowed as a system parameter.

[0153] The specific implementation process includes:

[0154] The number of contact points is counted. According to the contact point coordinate set determined in step S400, the number of required ejector pins 513, that is, the number of contact points, is directly calculated. This step is a definite type determination, and no optimization is performed.

[0155] The structure arrangement is matched. The contact point coordinates are converted into alignment coordinates relative to the array of through holes 5112 on the ejector assembly 510, and the nearest neighbor actual through hole 5112 position is selected for the insertion of the ejector pin 513. If there is a position that cannot be accurately matched, contact point fine adjustment can be allowed, and the center of the available through hole 5112 is preferentially approached, or if high-precision point arrangement is required, a high-density through hole 5112 module can be added.

[0156] The distribution parameters of the ejector pins 513 are output. The final number of ejector pins 513 and the position coordinates (or through hole 5112 number) of each ejector pin 513 on the abutting surface 5111 are determined. The distribution parameters can be used for: determining the arrangement of the through holes 5112 in the structure design stage of the ejecting mechanism 50; activating a specific ejector pin 513 action path in dynamic control; and subsequent simulation and verification in cooperation with the suction accessory 430 pressing force.

[0157] In the present embodiment, according to the contact point coordinate set obtained in step S400, the number of ejector pins 513 used to form the support area is counted, and it is mapped into the array of through holes 5112 on the ejector assembly 510 according to the relative positions of the contact points. The system preferentially matches the nearest neighbor through hole 5112 position, and performs spatial interference checking in combination with factors such as structural spacing, ejector pin 513 driving path, etc. Under the premise of meeting the minimum support area and point arrangement density, the final number of ejector pins 513 and the corresponding position distribution coordinates are determined, and are output as key configuration parameters for structure design and driving control.

[0158] The above described in the specification is merely an example of the present application. Those skilled in the art of the present application can make various modifications or supplements to the described specific embodiments or use similar ways to replace them, as long as they do not deviate from the content of the specification or exceed the scope defined by the claims, and should belong to the protection scope of the present application.

Claims

1. A patch device for transferring dies on a wafer, which is adhered to one side of a film sheet and completed in a singulation, to a package substrate, characterized by, The device comprises: a workbench comprising a first accommodating space and a work plane, wherein a first opening is formed on the work plane; a carrier arranged at the work plane to suspend a wafer adhered to a film; a material moving mechanism comprising: a suction accessory controlled to move, wherein the suction accessory comprises a suction surface to generate negative pressure when the suction accessory is in a working state; an ejection mechanism arranged in the first accommodating space, wherein the ejection mechanism comprises: a second displacement assembly comprising a second moving end controlled to move in a second plane parallel to the work plane; an ejection assembly arranged at the second moving end, wherein the ejection assembly comprises: an abutting member comprising an abutting surface parallel to the work plane and a second accommodating space, wherein a plurality of through holes are formed on the abutting surface and communicate with the second accommodating space; an ejection end arranged in the second accommodating space and controlled to move in a first direction perpendicular to the work plane; a thimble arranged at one side of the ejection end close to the through holes, wherein the thimble penetrates the through holes, and an end of the thimble away from the ejection end is configured to penetrate the through holes and move to the outside of the ejection assembly when the ejection end is in an ejection state; wherein when the suction accessory is attached to one side of the die and moves a preset stroke towards the die, the thimble end contacts the die to form a support area, and the area of the support area is greater than or equal to a minimum support area required according to a target pressure, and the target pressure is determined by the material of the suction accessory and the preset stroke.

2. The device according to claim 1, wherein: the first opening communicates with the first accommodating space; a feeding plane controlled to move, wherein an encapsulation site is arranged on the feeding plane to place an encapsulation substrate; the carrier comprises a bearing surface parallel to the work plane, wherein a second opening is formed on the bearing surface and communicates with the first opening; and the carrier further comprises a limiting mechanism to limit the wafer adhered to the film at the second opening of the bearing surface; the material moving mechanism further comprises a pickup assembly controlled to move in a first plane parallel to the work plane, wherein the pickup assembly comprises a suction end controlled to rotate and move in the first direction, and the rotation axis of the suction end and the first direction are both perpendicular to the work plane.

3. The device according to claim 2, wherein: the number of thimbles and the number of ejection ends are both a plurality, each thimble is connected to each ejection end one by one, and each ejection end is independently controlled; the support area is configured to increase the number of thimbles ejected and reduce the distance between adjacent thimbles when the target pressure increases.

4. The patch device of claim 2, wherein the number of through holes is greater than the number of thimbles, and the ejection assembly further comprises: a plurality of connecting pipes, wherein one end of the connecting pipe is connected to the end of the through hole away from the material moving mechanism and not penetrated by the thimble. A gas source is controlled to operate, and the gas source is connected to the other end of the connecting pipe.

5. The patch device of claim 2, wherein Further comprising: A first conveying mechanism, comprising an upper feeding position, a lower feeding position, and the feeding plane arranged between the upper feeding position and the lower feeding position and controlled to move, the feeding plane is arranged in parallel with the working plane.

6. The patch device of claim 2, wherein The material moving mechanism further comprises: A first displacement assembly, comprising a first moving end controlled to move in a first plane parallel to the working plane, the first moving end is connected with the pickup assembly to drive the pickup assembly to move; A third displacement assembly, comprising a third moving end controlled to move in the first plane, the moving track of the third moving end is perpendicular to the moving track of the first moving end, and the first displacement assembly is arranged on the third moving end to move with the third moving end.

7. The patch device of claim 2, wherein The ejection mechanism further comprises: A fourth displacement assembly, comprising a fourth moving end arranged in the first accommodating space, the fourth moving end is controlled to move in the second plane, the moving track of the fourth moving end is perpendicular to the moving track of the second moving end, and the second displacement assembly is arranged on the fourth moving end to move synchronously with the fourth moving end.

8. The patch device of claim 2, wherein, The suction end of the pickup assembly is configured to be driven to operate by a voice coil motor.

9. A method for designing a patch device as claimed in claim 2 or 3, characterized in that, Comprising the following steps: Obtaining the size parameters of the crystal grains, including the length, width and thickness of the crystal grains towards the side of the ejection mechanism; Obtaining the material of the suction member and the preset stroke, based on the elastic modulus and structural resilience characteristics of the crystal grain material, combining the preset stroke, determining the target pressure applied to the crystal grain by the suction member in the working state; According to the target pressure and the material characteristics of the crystal grain, the minimum support area required for the bottom surface of the crystal grain is obtained; Taking the minimum support area as the support area, and according to the boundary range of the crystal grains towards the side of the ejection mechanism, the contact positions of the ends of the plurality of ejector pins towards the side of the material moving mechanism are planned, so that the support area enclosed by the contact points of the ends of the plurality of ejector pins and the crystal grains is not less than the minimum support area, and the support area is completely located in the range of the side of the crystal grains towards the ejection mechanism; According to the number and relative position of the contact points, the number of the ejector pins required and the position distribution of the ejector pins are determined.

10. The method of designing according to claim 9, wherein, The minimum support area required for the bottom surface of the crystal grain according to the target pressure and the material characteristics of the crystal grain comprises the following steps: According to the material characteristics of the crystal grain, the upper limit of the unit area pressure that the crystal grain can withstand is obtained; According to the target pressure and the pressure upper limit, the minimum support area is obtained.

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