Micro LED transfer method and naked eye 3D display panel

Abstract

The application relates to a micro LED transfer method and a naked-eye 3D display panel, and relates to the technical field of semiconductor display. In the micro LED transfer method, a first magnetic area is formed in the sapphire substrate of each micro LED unit, a second magnetic area is formed at the bottom of each groove, the micro LED unit can be adsorbed on the transfer substrate, a first electrode comprises a first metal layer, a second magnetic metal layer and a third metal layer, a third magnetic metal layer is arranged below each pixel electrode, when the micro LED unit on the transfer substrate is transferred to a driving substrate, the first electrode and the third magnetic metal layer have magnetic attraction, the transfer accuracy of the micro LED unit is greatly improved, and the transfer yield of the micro LED unit is greatly improved.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor light-emitting, in particular to a micro-LED transfer method and a naked-eye 3D display panel. BACKGROUND

[0002] The naked-eye 3D display panel is a display technology that can present stereoscopic visual effects without wearing any auxiliary equipment such as 3D glasses or a helmet. This technology simulates the parallax effect produced by the human eye when viewing actual objects, allowing the audience to directly view images with spatial depth and stereoscopic effect without auxiliary equipment. The naked-eye 3D micro-LED display technology combines the technical advantages of micro-LED display technology and specific 3D display technology, uses an array of micro-LED light-emitting units as a display screen, and sets up a layer of cylindrical lens array in front of the display screen to divide the image into multiple sub-pixels and project them into the audience's eyes in different directions, thereby producing a stereoscopic effect, making it have the technical advantages of strong stereoscopic effect, bright colors, high resolution, and wide viewing angle. With the continuous progress of technology, the naked-eye 3D micro-LED display technology will become one of the important development directions of future display technology. SUMMARY

[0003] The purpose of the present application is to overcome the shortcomings of the prior art and provide a micro-LED transfer method and a naked-eye 3D display panel.

[0004] To achieve the above-mentioned purpose, the present application provides a micro-LED transfer method, which comprises the following steps:

[0005] A sapphire substrate is provided, and a first semiconductor layer, a quantum well layer, and a second semiconductor layer are epitaxially grown on the sapphire substrate.

[0006] Then a plurality of first electrodes are formed on the second semiconductor layer, the first electrodes comprising a first metal layer, a second magnetic metal layer, and a third metal layer, the second magnetic metal layer having a plurality of through holes exposing the first metal layer, and a part of the third metal layer being embedded into the through holes so that the first metal layer is in direct contact with the third metal layer.

[0007] A carrier plate is provided, and the sapphire substrate is arranged on the carrier plate so that the first electrodes face the carrier plate.

[0008] Then the sapphire substrate is cut to form a plurality of micro-LED units.

[0009] Then, a first ion implantation treatment is performed on the exposed surface of the sapphire substrate of each micro LED unit, and the implanted ions are nickel ions or cobalt ions, so as to form a first magnetic region in the sapphire substrate of each micro LED unit.

[0010] A transfer substrate is provided, which includes a plurality of recesses arranged in an array.

[0011] Then, a second ion implantation treatment is performed on the bottom of each recess of the transfer substrate, and the implanted ions are nickel ions or cobalt ions, so as to form a second magnetic region at the bottom of each recess, wherein the ion concentration of the second magnetic region is greater than the ion concentration of the first magnetic region.

[0012] Then, the plurality of micro LED units on the carrier substrate are transferred to the transfer substrate, so that one micro LED unit is arranged in one corresponding recess, and the first magnetic region of each micro LED unit is fixedly adsorbed with the second magnetic region at the bottom of each recess.

[0013] A driving substrate is provided, which includes a plurality of pixel electrodes, and a third magnetic metal layer is arranged below each pixel electrode. The plurality of micro LED units on the transfer substrate are transferred to the driving substrate, so that the first electrode of the micro LED unit is electrically connected with the corresponding pixel electrode.

[0014] As a preferred technical solution, the material of the first metal layer and the third metal layer is copper or aluminum, the material of the second magnetic metal layer is nickel or cobalt, and the first metal layer, the second magnetic metal layer and the third metal layer are respectively formed by thermal evaporation, magnetron sputtering, electron beam evaporation, electroplating or chemical plating.

[0015] As a preferred technical solution, the thickness of the first metal layer is greater than the thickness of the second magnetic metal layer, and the thickness of the second magnetic metal layer is greater than the thickness of the third metal layer.

[0016] As a preferred technical solution, each micro LED unit includes one first electrode.

[0017] As a preferred technical solution, the specific process of the first ion implantation treatment is that the implantation energy of the first ion implantation treatment is 1000 ev-5000 ev, and the implantation dose of the nickel ions or the cobalt ions is 3×10 15 cm -2 -3×10 18 cm -2 .

[0018] Preferably, after forming the first magnetic region, a low-temperature heat treatment is performed at 100-300 DEG C for 50-150 seconds.

[0019] Preferably, the second ion implantation treatment has an implantation energy of 6000-9000 ev, and the implantation dose of the nickel ions or the cobalt ions is 2*1015-5*1015 cm-2. 18 cm -2 -5*1015 20 cm -2 Preferably, after forming the second magnetic region, a low-temperature heat treatment is performed at 100-300 DEG C for 50-150 seconds.

[0020] Preferably, each pixel electrode is in direct contact with a corresponding third magnetic metal layer, the pixel electrode is a metal copper electrode or a metal aluminum electrode, and the third magnetic metal layer is a metal cobalt layer or a metal nickel layer.

[0021] Preferably, a packaging layer is formed, the transfer substrate is removed, and then the packaging layer is planarized to expose the first semiconductor of each micro LED unit, and then a common electrode is formed.

[0022] The application further provides a naked eye 3D display panel formed by the above micro LED transfer method.

[0023] The application has the following advantages:

[0024] In the micro LED transfer method, the first magnetic region is formed in the sapphire substrate of each micro LED unit, the second magnetic region is formed at the bottom of each groove, and the micro LED unit is adsorbed on the transfer substrate. The ion concentration of the second magnetic region is greater than that of the first magnetic region, thereby further improving the adsorption strength between the micro LED unit and the transfer substrate. The first electrode includes a first metal layer, a second magnetic metal layer, and a third metal layer. A third magnetic metal layer is arranged below each pixel electrode. When the micro LED unit on the transfer substrate is transferred to the driving substrate, the first electrode and the third magnetic metal layer have magnetic attraction, thereby greatly improving the transfer accuracy of the micro LED unit and greatly improving the transfer yield of the micro LED unit. BRIEF DESCRIPTION OF DRAWINGS

[0025] Figure 1 A structure diagram for forming a first semiconductor layer, a quantum well layer, a second semiconductor layer, and a first electrode is shown.

[0026] Figure 2 The diagram shown is a schematic representation of a sapphire substrate being cut to form multiple micro-LED units in an embodiment of the present invention.

[0027] Figure 3 The diagram shown is a schematic representation of the structure forming the first magnetic region in an embodiment of the present invention.

[0028] Figure 4 The diagram shows a structure in which a second magnetic region is formed at the bottom of a groove in a transfer substrate, as shown in an embodiment of the present invention.

[0029] Figure 5 The diagram shows a structural schematic of transferring multiple micro-LED units on a carrier plate to a transfer substrate in an embodiment of the present invention.

[0030] Figure 6 The diagram shows a structural schematic of transferring multiple micro-LED units on a transfer substrate to a driving substrate in an embodiment of the present invention.

[0031] Figure 7 The diagram shown is a schematic representation of the structure forming the encapsulation layer and the common electrode in an embodiment of the present invention. Detailed Implementation

[0032] To facilitate understanding of this application, a more complete description will be provided below with reference to the accompanying drawings. Preferred embodiments of this application are shown in the drawings. However, this application can be implemented in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided to provide a more thorough and complete understanding of the disclosure of this application.

[0033] like Figures 1-7 As shown, this embodiment provides a method for transferring a microLED, which includes the following steps:

[0034] like Figure 1 As shown, a sapphire substrate 100 is provided, on which a first semiconductor layer 101, a quantum well layer 102 and a second semiconductor layer 103 are epitaxially grown.

[0035] In a specific embodiment, the first semiconductor layer 101, the quantum well layer 102, and the second semiconductor layer 103 are epitaxially grown by metal-organic chemical vapor deposition. The first semiconductor layer 101 is a silicon-doped n-type gallium nitride layer or a magnesium-doped p-type gallium nitride layer, and correspondingly, the second semiconductor layer 103 is a magnesium-doped p-type gallium nitride layer or a silicon-doped n-type gallium nitride layer. The quantum well layer 102 can be an alternating InGaN quantum well layer and a GaN quantum barrier layer.

[0036] like Figure 1As shown, a plurality of first electrodes are then formed on the second semiconductor layer 103. The first electrodes include a first metal layer 201, a second magnetic metal layer 202 and a third metal layer 203. The second magnetic metal layer 202 has a plurality of through holes exposing the first metal layer 201. A portion of the third metal layer 203 is embedded in the through holes, so that the first metal layer 201 and the third metal layer 203 are in direct contact.

[0037] In a specific embodiment, the first metal layer 201 and the third metal layer 203 are made of copper or aluminum, and the second magnetic metal layer 202 is made of nickel or cobalt. The first metal layer 201, the second magnetic metal layer 202 and the third metal layer 203 are formed by thermal evaporation, magnetron sputtering, electron beam evaporation, electroplating or chemical plating, respectively.

[0038] In a specific embodiment, the thickness of the first metal layer 201 is greater than the thickness of the second magnetic metal layer 202, the thickness of the second magnetic metal layer 202 is greater than the thickness of the third metal layer 203, and more specifically, the thickness of the first metal layer 201 is 300-600 nanometers, the thickness of the second metal layer 202 is 200-400 nanometers, and the thickness of the third metal layer 203 is 100-200 nanometers.

[0039] In a specific embodiment, a first mask is used to form a copper layer as a first metal layer 201 by electroplating. Then, a second mask is used to deposit cobalt as a second metal layer 202 by magnetron sputtering. Finally, a third mask is used to deposit copper as a third metal layer 203 by magnetron sputtering.

[0040] like Figure 2 As shown, a carrier plate 300 is provided, and the sapphire substrate 100 is disposed on the carrier plate 300 such that the first electrode faces the carrier plate 300. The sapphire substrate 100 is then diced to form a plurality of micro-LED units 400.

[0041] In a specific embodiment, the carrier plate 300 can be made of ceramic, metal, semiconductor or plastic, and can be used to support the sapphire substrate 100.

[0042] In a specific embodiment, a temporary adhesive layer 301 is pre-formed on the carrier plate 300. The temporary adhesive layer 301 can lose its adhesiveness under light irradiation or heat treatment conditions. Then, when the sapphire substrate 100 is placed on the carrier plate 300, the first electrode is embedded in the temporary adhesive layer 301.

[0043] In specific embodiments, the sapphire substrate 100 is then subjected to a mechanical cutting process or a laser cutting process to form a plurality of micro LED units 400, and each of the micro LED units comprises one of the first electrodes.

[0044] As shown in FIG. 4, the exposed surface of the sapphire substrate 100 of each of the micro LED units 400 is then subjected to a first ion implantation process, and the implanted ions are nickel ions or cobalt ions, to form a first magnetic region 401 in the sapphire substrate 100 of each of the micro LED units 400. Figure 3

[0045] In specific embodiments, the first ion implantation process has an implantation energy of 1000 ev-5000 ev, and the nickel ions or the cobalt ions have an implantation dose of 3xl0 15 cm -2 -3xl0 18 cm -2 .

[0046] In specific embodiments, the low-temperature thermal treatment is performed at 100-300 °C for 50-150 seconds.

[0047] In specific embodiments, when the metal ions are nickel ions, the ion implantation process has an implantation energy of 1000 ev, 1500 ev, 2000 ev, 2500 ev, 3000 ev, 3500 ev, 4000 ev, or 4500 ev, and when the metal ions are cobalt ions, the ion implantation process has an implantation energy of 1200 ev, 1700 ev, 2200 ev, 2700 ev, 3200 ev, 3700 ev, 4200 ev, or 5000 ev, and the nickel ions or the cobalt ions have an implantation dose of 3xl0 15 cm -2 , 9xl0 15 cm -2 , 4xl0 16 cm -2 , 8xl0 16 cm -2 , 3xl0 17 cm -2 , 8xl0 17 cm -2 , or 3xl0 18 cm -2 .

[0048] ​In a specific embodiment, after the first magnetic region 401 is formed, it is subjected to low-temperature heat treatment at 100°C, 130°C, 170°C, 210°C, 260°C, 280°C, or 300°C for 50 seconds, 70 seconds, 80 seconds, 90 seconds, 110 seconds, 130 seconds, or 150 seconds. By subjecting the first magnetic region 401 to low-temperature heat treatment, the aggregation of metallic magnetic ions in the first magnetic region 401 can be accelerated, thereby improving the magnetism of the first magnetic region 401.

[0049] like Figure 4 As shown, a transfer substrate 500 is provided, the transfer substrate 500 including a plurality of grooves 501 arranged in an array. Then, a second ion implantation process is performed on the bottom of the plurality of grooves 501 of the transfer substrate 500, the implanted ions being nickel ions or cobalt ions, to form a second magnetic region 502 at the bottom of each groove, wherein the ion concentration of the second magnetic region 502 is greater than the ion concentration of the first magnetic region 401.

[0050] In a specific embodiment, the spacing between each of the grooves 501 is the same, thereby allowing adjustment of the spacing between adjacent microLED units 400.

[0051] In a specific embodiment, the second ion implantation process is as follows: the implantation energy of the second ion implantation process is 6000 eV-9000 eV, and the implantation dose of the nickel ions or the cobalt ions is 2 × 10⁻⁶. 18 cm -2 -5×10 20 cm -2 After the second magnetic region 502 is formed, it is subjected to low-temperature heat treatment at 100-300℃ for 50-150 seconds.

[0052] In a specific embodiment, when the metal ion is nickel ion, the implantation energy of the ion implantation process is 6000 eV, 6500 eV, 7000 eV, 7500 eV, 8000 eV, or 8500 eV; and when the metal ion is cobalt ion, the implantation energy of the ion implantation process is 6500 eV, 7000 eV, 7500 eV, 8000 eV, 8500 eV, or 9000 eV. The implantation dose of the nickel ion or the cobalt ion is 2 × 10⁻⁶. 18 cm -2 8×10 18 cm -2 3×10 19 cm -2 6×10 19 cm -2 9×10 19 cm -22×10 20 cm -2 Or 5×10 20 cm -2 .

[0053] In a specific embodiment, after the second magnetic region 502 is formed, it is subjected to low-temperature heat treatment at 100°C, 130°C, 170°C, 210°C, 260°C, 280°C, or 300°C for 50 seconds, 70 seconds, 80 seconds, 90 seconds, 110 seconds, 130 seconds, or 150 seconds. By subjecting the second magnetic region 502 to low-temperature heat treatment, the aggregation of metal magnetic ions in the second magnetic region 502 can be accelerated, thereby improving the magnetism of the second magnetic region 502.

[0054] like Figure 5 As shown, the multiple micro-LED units 400 on the carrier plate 300 are then transferred to the transfer substrate 500, such that one micro-LED unit 400 is disposed in a corresponding groove 501, and the first magnetic region 401 of each micro-LED unit 400 is fixedly attracted to the second magnetic region 502 at the bottom of each groove 501.

[0055] In a specific embodiment, by setting the ion concentration of the second magnetic region 502 to be greater than that of the first magnetic region 401, and by setting the second magnetic region 502 at the bottom of the groove 501, each micro-LED unit 400 can be stably placed in the groove 501, thereby preventing the micro-LED unit 400 from falling off during the transfer process.

[0056] like Figure 6 As shown, a driving substrate 600 is provided, the driving substrate including a plurality of pixel electrodes 601, and a third magnetic metal layer 602 is disposed below each pixel electrode 601. A plurality of micro-LED units 400 on a transfer substrate 500 are transferred to the driving substrate 600, such that the first electrode of the micro-LED unit 400 is connected to the corresponding pixel electrode 601.

[0057] In a specific embodiment, each pixel electrode 601 is in direct contact with the corresponding third magnetic metal layer 602. The pixel electrode 601 is a copper electrode or an aluminum electrode, and the third magnetic metal layer 602 is a cobalt layer or a nickel layer.

[0058] like Figure 7 As shown, an encapsulation layer 700 is then formed, the transfer substrate 500 is removed, and the encapsulation layer 700 is then planarized to expose the first semiconductor layer 101 of each of the microLED units 400, and then a common electrode 800 is formed.

[0059] In specific embodiments, the encapsulation layer 700 can be a polymer material, and then formed by an injection molding process, and the common electrode 800 is a transparent conductive layer.

[0060] As shown in Figure 7 The present application also provides a naked-eye 3D display panel formed by the micro-LED transfer method.

[0061] In other preferred technical solutions, the present application provides a micro-LED transfer method, which comprises the following steps:

[0062] A sapphire substrate is provided, and a first semiconductor layer, a quantum well layer, and a second semiconductor layer are epitaxially grown on the sapphire substrate.

[0063] Then, a plurality of first electrodes are formed on the second semiconductor layer, the first electrodes comprising a first metal layer, a second magnetic metal layer, and a third metal layer, the second magnetic metal layer having a plurality of through holes exposing the first metal layer, and a portion of the third metal layer being embedded into the through holes so that the first metal layer is in direct contact with the third metal layer.

[0064] A carrier plate is provided, and the sapphire substrate is arranged on the carrier plate so that the first electrodes face the carrier plate.

[0065] Then, the sapphire substrate is cut to form a plurality of micro-LED units.

[0066] Then, a first ion implantation treatment is performed on the exposed surface of the sapphire substrate of each micro-LED unit, and the implanted ions are nickel ions or cobalt ions, so as to form a first magnetic region in the sapphire substrate of each micro-LED unit.

[0067] A transfer substrate is provided, and the transfer substrate comprises a plurality of recesses arranged in an array.

[0068] Then, a second ion implantation treatment is performed on the bottom of each recess of the transfer substrate, and the implanted ions are nickel ions or cobalt ions, so as to form a second magnetic region at the bottom of each recess, wherein the ion concentration of the second magnetic region is greater than the ion concentration of the first magnetic region.

[0069] Then, the plurality of micro-LED units on the carrier plate are transferred to the transfer substrate, so that one micro-LED unit is arranged in one corresponding recess, and the first magnetic region of each micro-LED unit is fixedly adsorbed with the second magnetic region at the bottom of each recess.

[0070] A driving substrate is provided, the driving substrate comprises a plurality of pixel electrodes, a third magnetic metal layer is arranged below each of the pixel electrodes, and a plurality of micro LED units on a transfer substrate are transferred to the driving substrate so that the first electrodes of the micro LED units are electrically connected with the corresponding pixel electrodes.

[0071] In a more preferred technical solution, the first metal layer and the third metal layer are made of copper or aluminum, the second magnetic metal layer is made of nickel or cobalt, and the first metal layer, the second magnetic metal layer and the third metal layer are formed by thermal evaporation, magnetron sputtering, electron beam evaporation, electroplating or chemical plating respectively.

[0072] In a more preferred technical solution, the thickness of the first metal layer is greater than the thickness of the second magnetic metal layer, and the thickness of the second magnetic metal layer is greater than the thickness of the third metal layer.

[0073] In a more preferred technical solution, each of the micro LED units comprises a first electrode.

[0074] In a more preferred technical solution, the specific process of the first ion implantation treatment is that the implantation energy of the first ion implantation treatment is 1000 ev-5000 ev, and the implantation dose of the nickel ions or the cobalt ions is 3×10 15 cm -2 -3×10 18 cm -2 .

[0075] In a more preferred technical solution, after the first magnetic region is formed, low-temperature heat treatment is performed at 100-300℃ for 50-150 seconds.

[0076] In a more preferred technical solution, the specific process of the second ion implantation treatment is that the implantation energy of the second ion implantation treatment is 6000 ev-9000 ev, and the implantation dose of the nickel ions or the cobalt ions is 2×10 18 cm -2 -5×10 20 cm -2 , and after the second magnetic region is formed, low-temperature heat treatment is performed at 100-300℃ for 50-150 seconds.

[0077] In a more preferred technical solution, each of the pixel electrodes is in direct contact with the corresponding third magnetic metal layer, the pixel electrode is a metal copper electrode or a metal aluminum electrode, and the third magnetic metal layer is a metal cobalt layer or a metal nickel layer.

[0078] In a more preferred technical solution, a packaging layer is formed, the transfer substrate is removed, and then the packaging layer is planarized to expose the first semiconductor of each micro LED unit, and then a common electrode is formed.

[0079] In a more preferred technical solution, the application further provides a naked-eye 3D display panel formed by the above micro LED transfer method.

[0080] In the micro LED transfer method of the application, the sapphire substrate of each micro LED unit is provided with a first magnetic region, the bottom of each groove is provided with a second magnetic region, so that the micro LED unit can be adsorbed on the transfer substrate, and the ion concentration of the second magnetic region is greater than that of the first magnetic region, so as to further improve the adsorption strength between the micro LED unit and the transfer substrate, and the first electrode includes a first metal layer, a second magnetic metal layer and a third metal layer, and each pixel electrode is provided with a third magnetic metal layer below, so that when the micro LED unit on the transfer substrate is transferred to the driving substrate, the first electrode and the third magnetic metal layer have magnetic attraction, thereby greatly improving the transfer accuracy of the micro LED unit and greatly improving the transfer yield of the micro LED unit.

[0081] The above embodiments only illustrate the principles and effects of the application, and are not used to limit the application. Any person skilled in the art can modify or change the above embodiments without departing from the spirit and scope of the application. Therefore, all equivalent modifications or changes made by those skilled in the art without departing from the spirit and technical idea of the application should be covered by the claims of the application.

Claims

1. A method for transferring micro-LEDs, characterized in that: The micro-LED transfer method comprises the following steps: A sapphire substrate is provided, and a first semiconductor layer, a quantum well layer and a second semiconductor layer are epitaxially grown on the sapphire substrate; Then, a plurality of first electrodes are formed on the second semiconductor layer, the first electrodes comprising a first metal layer, a second magnetic metal layer and a third metal layer, the second magnetic metal layer having a plurality of through holes exposing the first metal layer, and a part of the third metal layer being embedded into the through holes so that the first metal layer is in direct contact with the third metal layer; A carrier plate is provided, and the sapphire substrate is arranged on the carrier plate so that the first electrodes face the carrier plate; Then, the sapphire substrate is subjected to a cutting process to form a plurality of micro-LED units; Then, a first ion implantation process is performed on the exposed surface of the sapphire substrate of each micro-LED unit, and the implanted ions are nickel ions or cobalt ions, so as to form a first magnetic region in the sapphire substrate of each micro-LED unit; A transfer substrate is provided, and the transfer substrate comprises a plurality of recesses arranged in an array; Then, a second ion implantation process is performed on the bottom of each recess of the transfer substrate, and the implanted ions are nickel ions or cobalt ions, so as to form a second magnetic region at the bottom of each recess, wherein the ion concentration of the second magnetic region is greater than that of the first magnetic region; A driving substrate is provided, and the driving substrate comprises a plurality of pixel electrodes, each pixel electrode being provided below a third magnetic metal layer, and the plurality of micro-LED units on the transfer substrate are transferred to the driving substrate so that the first electrodes of the micro-LED units are electrically connected to the corresponding pixel electrodes. The material of the first metal layer and the third metal layer is copper or aluminum, the material of the second magnetic metal layer is nickel or cobalt, and the first metal layer, the second magnetic metal layer and the third metal layer are formed by thermal evaporation, magnetron sputtering, electron beam evaporation, electroplating or chemical plating respectively.

2. The method of claim 1, wherein: The thickness of the first metal layer is greater than that of the second magnetic metal layer, and the thickness of the second magnetic metal layer is greater than that of the third metal layer.

3. The method of claim 2, wherein: Each micro-LED unit comprises one first electrode.

4. The method of claim 1, wherein: The specific process of the first ion implantation process is that the implantation energy of the first ion implantation process is 1000 ev-5000 ev, and the implantation dose of the nickel ions or the cobalt ions is 3×1015 cm-2-3×1018 cm-2.

5. The method of claim 1, wherein: After the first magnetic region is formed, a low-temperature heat treatment is performed at 100-300℃ for 50-150 seconds.

6. The method of claim 5, wherein: ​ 7. The method of claim 5, wherein: The specific process of the second ion implantation treatment is that: the implantation energy of the second ion implantation treatment is 6000 ev-9000 ev, the implantation dose of the nickel ions or the cobalt ions is 2*1018 cm-2-5*1020 cm-2, and after forming the second magnetic region, low-temperature heat treatment is carried out at 100-300 DEG C for 50-150 seconds.

8. The method of claim 1, wherein: Each of the pixel electrodes is in direct contact with a corresponding third magnetic metal layer, the pixel electrode is a metal copper electrode or a metal aluminum electrode, and the third magnetic metal layer is a metal cobalt layer or a metal nickel layer.

9. The method of claim 1, wherein: A packaging layer is formed, the transfer substrate is removed, and then the packaging layer is subjected to a planarization treatment to expose the first semiconductor layer of each micro LED unit, and then a common electrode is formed.

10. A naked-eye 3D display panel, characterized in that, The naked eye 3D display panel is formed by using the micro LED transfer method in any one of claims 1-9.

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