Gallium arsenide diode temperature sensor
By using gallium arsenide diode temperature sensors, the problems of poor linearity and insufficient resistance to magnetic field interference of silicon diodes at ultra-low temperatures are solved, and high-precision temperature measurement in a magnetic field environment is achieved.
Patent Information
- Application Number
- CN202511088097.0
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-08-05
- Publication Date
- 2025-10-03
AI Technical Summary
Existing silicon diode temperature sensors have poor linearity in ultra-low temperature environments, making it difficult to achieve accurate measurement. They also have insufficient resistance to magnetic field interference, affecting measurement accuracy and reliability.
A gallium arsenide diode temperature sensor is used. The contact resistance is reduced by gold plating on the leads, and a glass shell is used to isolate the environmental corrosion. Combined with a constant current source for temperature detection, it achieves good linearity and precise temperature measurement in a magnetic field environment.
Good linear temperature measurement is achieved at ultra-low temperatures, the curve is easy to interpolate, the error is small, the magnetic field interference is small in the 2-40K temperature range, the error is 0.1K in a 2 Tesla magnetic field and 0.6-1K in a 4 Tesla magnetic field, making it suitable for complex magnetic field environments.
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Figure CN120740784A_ABST
Abstract
Description
Technical Field
[0001] The present invention belongs to the technical field of temperature sensors, and in particular relates to a gallium arsenide diode temperature sensor. Background Art
[0002] A temperature sensor is a device that senses ambient temperature and converts it into a measurable electrical signal. It has widespread and important applications in numerous fields, including industrial production, scientific research, and healthcare. Accurate temperature measurement is crucial for ensuring proper equipment operation, improving product quality, and advancing scientific research.
[0003] Silicon diode temperature sensors are a commonly used type of sensor in the field of ultra-low temperature measurement. However, they have some significant limitations. First, the linear curve of silicon diode temperature sensors is only well-suited for temperatures around 30K. Below this temperature range, their characteristics change significantly, transitioning from linear to nonlinear. This nonlinearity makes accurate temperature calibration extremely difficult, significantly impacting the accuracy and reliability of temperature measurements and making it difficult to meet the demand for high-precision measurements in ultra-low temperature environments. Second, silicon diode temperature sensors have poor resistance to magnetic field interference. In ultra-low temperature environments, the presence of magnetic fields can interfere with sensor performance, leading to skewed measurement results and further limiting their application in complex ultra-low temperature environments. Summary of the Invention
[0004] In order to solve the above problems, the present invention proposes a gallium arsenide diode temperature sensor.
[0005] The technical solution adopted by the present invention is as follows: The present invention provides a gallium arsenide diode temperature sensor, including a gallium arsenide diode, the positive electrode of the gallium arsenide diode is connected to one end of a first lead, the negative electrode of the gallium arsenide diode is connected to one end of a second lead, and a glass shell is provided on the outer wall of the gallium arsenide diode.
[0006] Furthermore, a first gold-plated layer is plated on an outer wall of the first lead, and a second gold-plated layer is plated on an outer wall of the second lead.
[0007] Furthermore, the first lead and the second lead are externally connected to a constant current source.
[0008] Furthermore, the glass shell is used to isolate the glass from environmental corrosion.
[0009] Furthermore, the first gold-plated layer is used to reduce contact resistance, and the second gold-plated layer is used to reduce contact resistance.
[0010] The beneficial effects achieved by the present invention using the above structure are as follows: This sensor overcomes the shortcomings of existing ultra-low-temperature silicon diode temperature sensors. It exhibits excellent linearity at ultra-low temperatures, making it easy to interpolate the curve using a suitable formula, enabling precise temperature measurement. It also exhibits low magnetic field sensitivity: in the 2-40K temperature range, the error is only 0.1K in a 2 Tesla magnetic field; in a 4 Tesla magnetic field, the error is 0.6-1K. Therefore, it is more suitable for temperature measurement in magnetic field environments than silicon diode temperature sensors. BRIEF DESCRIPTION OF THE DRAWINGS
[0011] In order to more clearly illustrate the technical solution of the present invention, the following is a brief introduction to the drawings required for the description. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.
[0012] Figure 1 This is a schematic structural diagram of a gallium arsenide diode temperature sensor according to the present invention; Figure 2 for Figure 1 A partial enlarged view of part A; Figure 3 This is the forward voltage-temperature characteristic diagram of the gallium arsenide diode temperature sensor; Figure 4 This is the sensitivity characteristic diagram of the gallium arsenide diode temperature sensor.
[0013] Among them, 1. Gallium arsenide diode, 2. Glass shell, 3. First lead, 4. Second lead, 5. First gold-plated layer, 6. Second gold-plated layer. DETAILED DESCRIPTION
[0014] In order to make the purpose, features, and advantages of the present invention more obvious and easy to understand, the technical solutions of the present invention will be clearly and completely described below in conjunction with the drawings in this specific embodiment. Obviously, the embodiments described below are only part of the embodiments of the present invention, not all of them. Based on the embodiments in this patent, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of this patent.
[0015] like Figure 1-Figure 4 As shown, the present invention provides a gallium arsenide diode temperature sensor, including a gallium arsenide diode 1. The anode of the gallium arsenide diode 1 is connected to one end of a first lead 3, and the outer wall of the first lead 3 is plated with a first gold-plated layer 5. The cathode of the gallium arsenide diode 1 is connected to one end of a second lead 4, and the outer wall of the second lead 4 is plated with a second gold-plated layer 6. A glass shell 2 is provided on the outer wall of the gallium arsenide diode 1, and the glass shell 2 is used to isolate environmental corrosion. The first lead 3 and the second lead 4 are externally connected to a constant current source. The first gold-plated layer 5 is used to reduce contact resistance, and the second gold-plated layer 6 is used to reduce contact resistance.
[0016] When in use, the glass shell 2 is close to the test source, the first lead 3 and the second lead 4 are connected to a constant current source, and the forward voltage drop is measured. Temperature detection is achieved as the temperature changes. The temperature coefficient of the forward voltage drop of the gallium arsenide diode is about -2mV / ℃, and its linear relationship satisfies: ,in is the reference voltage, is the temperature sensitivity coefficient. Temperature detection is achieved by measuring the change of forward voltage drop with temperature. The above is the overall workflow of the present invention. Just repeat this step next time you use it.
[0017] It can be seen from the above embodiments that the beneficial effects of the present invention are: This sensor overcomes the shortcomings of existing ultra-low-temperature silicon diode temperature sensors. It exhibits excellent linearity at ultra-low temperatures, making it easy to interpolate the curve using a suitable formula, enabling precise temperature measurement. It also exhibits low magnetic field sensitivity: in the 2-40K temperature range, the error is only 0.1K in a 2 Tesla magnetic field; in a 4 Tesla magnetic field, the error is 0.6-1K. Therefore, it is more suitable for temperature measurement in magnetic field environments than silicon diode temperature sensors.
[0018] The above description of the disclosed embodiments is intended to enable one skilled in the art to implement or use the present invention. Various modifications to these embodiments will be readily apparent to one skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the present invention. Therefore, the present invention is not limited to the embodiments shown herein but is intended to conform to the widest scope consistent with the principles and novel features disclosed herein.
Claims
1. A gallium arsenide diode temperature sensor, characterized in that: The invention comprises a gallium arsenide diode (1), wherein the positive electrode of the gallium arsenide diode (1) is connected to one end of a first lead (3), the negative electrode of the gallium arsenide diode (1) is connected to one end of a second lead (4), and a glass shell (2) is provided on the outer wall of the gallium arsenide diode (1).
2. The gallium arsenide diode temperature sensor according to claim 1, characterized in that: The outer wall of the first lead (3) is plated with a first gold-plated layer (5), and the outer wall of the second lead (4) is plated with a second gold-plated layer (6).
3. The gallium arsenide diode temperature sensor according to claim 2, characterized in that: The first lead (3) and the second lead (4) are externally connected to a constant current source.
4. The gallium arsenide diode temperature sensor according to claim 3, characterized in that: The glass shell (2) is used to isolate the environment from corrosion.
5. The gallium arsenide diode temperature sensor according to claim 4, characterized in that: The first gold-plated layer (5) is used to reduce contact resistance, and the second gold-plated layer (6) is used to reduce contact resistance.