High-precision multi-area semiconductor heating platform control system

Abstract

The invention relates to a high-precision multi-region semiconductor heating platform control system applied to the related technical field of semiconductors, through the arrangement of a region heating unit and a local heating unit, when a local solvent is not completely removed in a later period, the position of an abnormal point can be determined in time in cooperation with the arrangement of an abnormal monitoring unit, so that the accuracy of the abnormal point is improved. Compared with the integral heating of the same area in the prior art, the method has the advantages that the influence on other normal areas is greatly reduced, the uniformity of removing the solvent on the surface of the photoresist is effectively improved, and the forming of the surface adhesive film is more uniform; besides, after the abnormity monitoring unit monitors the abnormal point, the edge contour of the abnormal point can be determined, and the thermal compensation disc can reduce the actual heating area again according to the contour during targeted heating, so that the accuracy of secondary heating of the low abnormal point is further improved, and the influence on other areas is further reduced.

Description

Technical Field

[0001] The present invention relates to a heating platform control system, and in particular to a high-precision multi-zone semiconductor heating platform control system applied to the semiconductor-related technical field. Background Art

[0002] During the process of heating and baking to remove the solvent in the photoresist on the surface of the wafer, since the edge of the wafer is closer to the smoke exhaust port, the air flow speed there is greater, resulting in the temperature of the edge being lower than that at the center, resulting in low uniformity during the solvent removal process, affecting the uniformity of the film forming on the surface of the wafer. For example, a heating unit device for a photoresist baking process is disclosed in the Chinese patent specification with publication number CN116594269A, and a photoresist baking machine is disclosed in the Chinese patent specification with publication number CN222529651U.

[0003] To solve the above problems, the existing technology adopts a zoned heating mode, that is, the heating temperature gradually increases from the center to the outside to reduce the temperature difference on the wafer surface caused by exhaust. However, after baking, it is often easy to have a small area of ​​local solvent not completely removed. If the entire heating zone is turned on for heating, there is still a problem of high energy consumption. At the same time, it is also easy to cause the remaining areas where the solvent has been removed to be overheated, affecting the quality of film molding. The existing technology also adopts a matrix-arranged heating element method to achieve regional heating, but in this method, the number of heating elements is too large, which is easy to be damaged and difficult to detect damage, and it is also easy to cause the problem of incomplete local solvent removal. Summary of the Invention

[0004] In view of the above-mentioned prior art, the technical problem to be solved by the present invention is that when the solvent in a small area is not completely removed, the entire area is heated again, which not only easily causes high energy consumption, but also easily affects other areas where the solvent has been removed.

[0005] To solve the above problems, the present invention provides a high-precision multi-zone semiconductor heating platform control system, comprising a control center installed on the heating platform and a wafer transfer module, a fume exhaust unit, a heating module, and an abnormality monitoring unit connected to the control center signal. The control system also includes a simulation platform for simulating the heating platform, and the simulation platform is connected to the control center signal. The heating module includes a zoned heating unit and a local heating unit located below the zoned heating unit. The zoned heating unit is divided into a circular heating zone and a plurality of annular heating zones coaxial with the circular heating zone. The outermost annular heating zone is equally divided into a plurality of arc-shaped heating zones with independent temperature control. The wafer transfer module includes a conveyor plate mounted on the bottom plate of the heating platform via an electric slide rail and three external electric push rods distributed in a circular array. The extended ends of the three external electric push rods are movable through the zoned heating unit. The abnormality monitoring unit includes an infrared sensor installed on the bottom wall of the baking chamber through an annular electric slide rail. The lower end of the infrared sensor is connected to a strong magnetic slider through an electric rotating shaft. The strong magnetic slider matches the annular electric slide rail. The local heating unit includes a ferromagnetic slider corresponding to the strong magnetic slider, an inner electric push rod fixedly connected to the lower end of the ferromagnetic slider, and a thermal compensation disk fixedly connected to the end of the inner electric push rod. The thermal compensation disk is located below the partitioned heating unit, and the thermal compensation disk and the partitioned heating unit are in contact with each other. A compensation cavity is excavated in the heating platform, and an annular slide groove corresponding to the annular electric slide rail is excavated on the upper inner wall of the compensation cavity. The compensation cavity is located directly below the partitioned heating unit, and the thermal compensation disk is located in the compensation cavity.

[0006] In the above-mentioned high-precision multi-zone semiconductor heating platform control system, through the setting of zoned heating units and local heating units, when the local solvent is not completely removed in the later stage, the abnormal point and its contour can be determined in time in conjunction with the setting of the abnormal monitoring unit, and then the local heating unit can be controlled to perform targeted heating on the abnormal point according to the contour. Compared with the existing technology, the impact on other normal areas is greatly reduced, and at the same time, energy consumption is effectively reduced, and the uniformity of solvent removal on the photoresist surface is effectively improved, making the surface film forming more uniform.

[0007] As a further improvement of the present application, the smoke exhaust unit includes two smoke exhaust hoods, a corrugated duct fixedly connected between the two smoke exhaust hoods, and a smoke exhaust duct fixedly connected to the outer end of the smoke exhaust hood on the side away from the conveying plate. The corrugated duct connects the two smoke exhaust hoods. The inner walls of the two smoke exhaust hoods are each provided with multiple air intake holes. The smoke exhaust duct runs through the side wall of the baking chamber. The smoke exhaust hood connected to the smoke exhaust duct is fixed to the bottom wall of the baking chamber. The other smoke exhaust hood is connected to the top wall of the baking chamber through an electric push rod. When the heights of the two are consistent, the inner walls of the two are complete rings and are coaxial with the partitioned heating unit.

[0008] As a further improvement of the present application, the center lines of the inner electric push rod and the thermal compensation disk and the laser emitting end of the infrared sensor are all oriented toward the center axis of the zoned heating unit.

[0009] As a further improvement of the present application, the heating temperature of the circular heating zone and the multiple annular heating zones gradually increases from the center outward, and the temperature difference between the edge and the middle of the wafer is no more than 3°C.

[0010] As another improvement of the present application, the thermal compensation plate includes a heat-conducting top plate facing the partitioned heating unit, an insulation layer located below the heat-conducting top plate, a bottom plate fixedly attached to the lower end of the insulation layer, and a plurality of heating plates fixedly embedded in the heat-conducting top plate, each heating plate having a corresponding selective power-on unit at its lower end, and the selective power-on unit is arranged between the heat-conducting top plate and the insulation layer.

[0011] As another improved supplement to the present application, the power-on unit is selected to include a T-shaped conductive column placed on the upper end of the insulation layer, two insulating columns fixedly connected to the lower end of the heating plate, and an elastic tube fixedly connected at the step of the T-shaped conductive column and between the insulating columns, and an electromagnetic plate fixedly embedded in the chassis. The ends of the two insulating columns extend between the insulation layer and the heat-conducting top plate, and the upper end of the T-shaped conductive column extends between the two insulating columns and does not contact the lower end of the heat-conducting top plate.

[0012] As another improved supplement to the present application, the inner walls of the two insulating columns at one end close to each other are fixedly embedded with conductive contacts, which are electrically connected to the heating plate. The conductive contacts are located above the T-shaped conductive column, and a magnetic patch is attached to the bottom of the T-shaped conductive column.

[0013] A high-precision multi-zone semiconductor heating platform control system, wherein the heating control method comprises the following steps: S1. First, the wafer coated with photoresist is transferred to the baking chamber via a conveyor tray. Then, the external electric push rod is controlled to extend so that it passes through the conveyor tray and lifts the wafer. Then, the conveyor tray and the external electric push rod are controlled to reset in sequence so that the wafer falls on the zoned heating unit. Then, the fume hood near the conveyor tray is controlled to move downward and contact the bottom wall of the baking chamber. S2. The control center starts the zoned heating units and simultaneously starts the fume exhaust unit. During heating, the heating temperature of the circular heating zone and multiple annular heating zones is gradually increased from the inside to the outside, and the maximum temperature difference on the wafer surface is controlled to be no more than 3°C. S3. Sampling the exhaust gas from the fume exhaust unit at regular intervals, and analyzing the solvent characteristic ion fragments by gas chromatography-mass spectrometry until the solvent concentration in the solvent characteristic ion fragments is less than 50 ppm; S4. The wafer surface is scanned in sequence by the abnormality monitoring unit to detect the volatilization of the surface solvent. When the abnormality of incomplete volatilization of the solvent is detected, the abnormal point is heated in a targeted manner to assist the volatilization of the solvent, so as to improve the uniformity of the film on the wafer surface after baking.

[0014] As another improved supplement of the present application, the specific operation of step S4 is: S41. First, a simulation platform is used to simulate a three-dimensional image of the baking chamber. Then, the abnormality monitoring unit is controlled to move around the infrared sensor so that the infrared sensor sequentially scans various locations on the upper surface of the wafer to detect whether the solvent is evenly removed from each location. If any residual solvent is detected in a local area, the simulation platform marks that location on the simulated three-dimensional image as an abnormal point. S42. Continue to control the infrared sensor to rotate, and during the rotation, continuously adjust the position of the infrared sensor transmitter through the electric shaft so that it always faces the abnormal point until the infrared sensor returns to the position where the abnormal point was first obtained. The simulation platform records the points of each abnormal data obtained during the rotation of the infrared sensor, and then connects the points in series to obtain the outline of the abnormal point on the simulation platform; S43. Then confirm the position of the abnormal point on the partitioned heating unit, and then control the thermal compensation disk to move radially along the partitioned heating unit until it coincides with the abnormal point. The coincidence of the thermal compensation disk and the abnormal point contour is obtained through the simulation platform. The control center controls the heating plate in the overlapping area to be energized according to the coincidence of the two obtained from the simulation platform to achieve precise heating.

[0015] As another improved supplement to the present application, in step S42, among the points of abnormal data obtained during the rotation of the infrared sensor, when there is a point with obvious large deviation from the position of the abnormal point, the point with large deviation is eliminated and marked as another abnormal point. This can effectively avoid connecting two abnormal points in different positions in series, thereby improving the accuracy of the abnormal point contour finally obtained. Then, steps S41-S43 are repeated for the newly marked abnormal point until no abnormal point appears after the infrared sensor rotates 360° continuously.

[0016] In summary, through the setting of the zoned heating unit and the local heating unit, when the local solvent is not completely removed in the later stage, the position of the abnormal point can be determined in time in conjunction with the setting of the abnormal monitoring unit, and targeted heating can be performed through the thermal compensation disk. Compared with the overall heating of the same area in the prior art, the impact on other normal areas is greatly reduced, and the uniformity of solvent removal on the surface of the photoresist is effectively improved, making the surface film forming more uniform; in addition, after detecting the abnormal point, the abnormal monitoring unit can also determine the edge contour of the abnormal point. When performing targeted heating, the thermal compensation disk can further reduce the actual heating area according to the contour, further improving the accuracy of the secondary heating of the low abnormal point, and further reducing the impact on other areas. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 This is a module block diagram of the first embodiment of this application; Figure 2 This is a three-dimensional diagram of the heating platform according to the first embodiment of the present application; Figure 3 This is a side view of the heating platform of the first embodiment of the present application; Figure 4 This is a schematic diagram of the heating process of the first embodiment of the present application; Figure 5 This is a schematic diagram of the changes of the fume exhaust assembly of the first embodiment of the present application before and after the wafer is transported to the heating plate; Figure 6 This is a schematic diagram of the zones of the zoned heating unit according to the first embodiment of the present application; Figure 7 This is a schematic cross-sectional view of a zoned heating unit according to a first embodiment of the present application; Figure 8 This is a bottom view of a zoned heating unit according to a first embodiment of the present application; Figure 9 This is a schematic cross-sectional view of a zoned heating unit according to a second embodiment of the present application; Figure 10 A partial cross-sectional schematic diagram of a selective power supply unit according to a second embodiment of the present application; Figure 11 This is a cross-sectional schematic diagram of a thermal compensation disk according to a second embodiment of the present application; Figure 12 This is a schematic diagram of a process in which an abnormality monitoring unit scans a wafer surface according to a second embodiment of the present application; Figure 13 This is a cross-sectional schematic diagram of a thermal compensation disk according to a second embodiment of the present application; Figure 14 This is a schematic cross-sectional view of a thermal compensation disk according to the second embodiment of the present application.

[0018] Description of the numbers in the figure: 11 conveyor tray, 12 external electric push rod, 201 compensation chamber, 3 smoke exhaust unit, 31 smoke exhaust hood, 32 corrugated duct, 33 smoke exhaust duct, 301 suction hole, 4 zone heating unit, 41 circular heating zone, 42 annular heating zone, 5 infrared sensor, 501 strong magnetic slider, 61 ferromagnetic slider, 62 internal electric push rod, 7 thermal compensation disk, 71 thermal conductive top disk, 72 heating plate, 731 thermal insulation layer, 732 bottom disk, 741 insulating column, 742 T-shaped conductive column, 743 elastic cylinder, 744 electromagnetic sheet, 701 conductive contact sheet. DETAILED DESCRIPTION

[0019] Two implementation modes of the present application are described in detail below with reference to the accompanying drawings.

[0020] The first implementation method: Figure 1-Figure 3 As shown, where a represents the heating platform body and b represents the wafer, a high-precision multi-zone semiconductor heating platform control system includes a control center installed on the heating platform and a wafer transfer module, a smoke exhaust unit 3, a heating module and an abnormality monitoring unit connected to the control center signal. The control system also includes a simulation platform for simulating the heating platform, and the simulation platform is connected to the control center signal.

[0021] The wafer transfer module includes a conveyor plate 11 mounted on the bottom plate of the heating platform through an electric slide rail and three outer electric push rods 12 distributed in a circular array, two of which are located on the same straight line. The extended ends of the three outer electric push rods 12 are movable through the partition heating unit 4. Figure 4 There are two open long grooves on the conveyor tray 11, which correspond to the external electric push rods 12. After the wafer is transferred, the external electric push rods 12 can pass through the conveyor tray 11 and lift the wafer and separate it from the conveyor tray 11.

[0022] like Figure 5 The smoke exhaust unit 3 includes two smoke exhaust hoods 31, a corrugated duct 32 fixedly connected between the two smoke exhaust hoods 31, and a smoke exhaust duct 33 fixedly connected to the outer end of the smoke exhaust hood 31 on the side away from the conveyor tray 11. The corrugated duct 32 connects the two smoke exhaust hoods 31. The inner walls of the two smoke exhaust hoods 31 are each opened with a plurality of suction holes 301. The smoke exhaust duct 33 runs through the side walls of the baking chamber. The smoke exhaust hood 31 connected to the smoke exhaust duct 33 is fixed to the bottom wall of the baking chamber. The other smoke exhaust hood 31 is connected to the top wall of the baking chamber by an electric push rod. When the two are at the same height, the inner walls of the two are complete annular and coaxial with the zoned heating unit 4. The arrangement of the movable smoke exhaust hood 31 enables it to heat and bake the wafers, so that the solvent volatilized on the wafers can be evenly diffused to the surroundings and absorbed and discharged by the smoke exhaust hood 31, so that the relative temperature difference of the entire outer edge of the wafer is not too large; at the same time, it is not easy to affect the transportation of the wafers by the conveyor tray 11.

[0023] like Figure 7-Figure 8 The heating module includes a zoned heating unit 4 and a local heating unit located below the zoned heating unit 4, such as Figure 6 The zoned heating unit 4 is divided into a circular heating zone 41 and a plurality of annular heating zones 42 coaxial with the circular heating zone 41. The outermost annular heating zone 42 is equally divided into a plurality of arc-shaped heating zones with independent temperature control. Along the direction from the center to the outside, the heating temperature of the circular heating zone 41 and the plurality of annular heating zones 42 gradually increases, thereby realizing zoned heating, and further alleviating the problem of low temperature at the edge of the wafer due to exhaust, and effectively ensuring a low temperature difference between the edge and the center of the wafer, so that the temperature difference between the edge and the middle of the wafer is no more than 3°C, which is convenient for uniform volatilization of the solvent.

[0024] like Figure 7The abnormality monitoring unit includes an infrared sensor 5 installed on the bottom wall of the baking chamber through an annular electric slide rail. The lower end of the infrared sensor 5 is connected to a strong magnetic slider 501 through an electric rotating shaft. The strong magnetic slider 501 matches the annular electric slide rail. The local heating unit includes a ferromagnetic slider 61 corresponding to the strong magnetic slider 501, an inner electric push rod 62 fixedly connected to the lower end of the ferromagnetic slider 61, and a thermal compensation disk 7 fixedly connected to the end of the inner electric push rod 62. The thermal compensation disk 7 is located below the partition heating unit 4, and the thermal compensation disk 7 and the partition heating unit 4 are in contact with each other. A compensation cavity 201 is excavated in the heating platform, and an annular groove corresponding to the annular electric slide rail is excavated on the inner wall of the compensation cavity 201. 1 is located directly below the partitioned heating unit 4, and the thermal compensation disk 7 is located in the compensation chamber 201. When the infrared sensor 5 rotates around the axis of the partitioned heating unit 4 to detect whether the solvent is removed evenly, the ferromagnetic slider 61 moves accordingly due to the magnetic attraction, and then the thermal compensation disk 7 moves with it. The inner electric push rod 62 and the center line of the thermal compensation disk 7 and the laser emitting end of the infrared sensor 5 are all oriented towards the center axis of the partitioned heating unit 4, so that the infrared beams emitted by the thermal compensation disk 7 and the infrared sensor 5 coincide with each other in a top-down angle. After determining the abnormal point, the thermal compensation disk 7 can be driven to reach the abnormal point by directly controlling the extension of the inner electric push rod 62, which can effectively reduce the cumbersomeness of the thermal compensation disk 7 reaching the abnormal point for fixed-point heating.

[0025] In summary, through the setting of the partitioned heating unit 4 and the local heating unit, when the local solvent is not completely removed in the later stage, the position of the abnormal point can be determined in time in conjunction with the setting of the abnormal monitoring unit, and targeted heating can be performed through the thermal compensation disk 7. Compared with the overall heating of the same area in the prior art, the impact on other normal areas is greatly reduced, and at the same time, energy consumption is effectively reduced, and the uniformity of solvent removal on the photoresist surface is effectively improved, making the surface film forming more uniform.

[0026] The second implementation method: This embodiment further improves the thermal compensation disk 7 on the basis of the first embodiment, and the rest of the embodiments remain the same as the first embodiment.

[0027] A high-precision multi-zone semiconductor heating platform control system, wherein the heating control method comprises the following steps: S1. First, the wafer coated with photoresist is transferred to the baking chamber via the conveyor tray 11. Then, the external electric push rod 12 is controlled to extend so as to pass through the conveyor tray 11 and lift the wafer. Then, the conveyor tray 11 and the external electric push rod 12 are controlled to reset in sequence so that the wafer falls on the zoned heating unit 4. Then, the fume hood 31 near the conveyor tray 11 is controlled to move downward and contact the bottom wall of the baking chamber. S2. The control center controls the zoned heating unit 4 to start heating and simultaneously starts the fume exhaust unit. During heating, the heating temperature of the circular heating zone 41 and the multiple annular heating zones 42 is controlled to gradually increase from the inside to the outside, and the maximum temperature difference on the wafer surface is controlled to be no more than 3°C. S3. Sampling the exhaust gas from the fume exhaust unit at regular intervals, and analyzing the solvent characteristic ion fragments by gas chromatography-mass spectrometry until the solvent concentration in the solvent characteristic ion fragments is less than 50 ppm; S4. The wafer surface is scanned in sequence by the abnormality monitoring unit to detect the volatilization of the surface solvent. When the abnormality of incomplete volatilization of the solvent is detected, the abnormal point is heated in a targeted manner to assist the volatilization of the solvent, so as to improve the uniformity of the film on the wafer surface after baking.

[0028] The specific operations of step S4 are: S41, firstly, the three-dimensional image in the baking cavity is simulated through the simulation platform, such as Figure 12 Then, the abnormality monitoring unit is controlled to move around the infrared sensor 5, so that the infrared sensor 5 scans various locations on the upper surface of the wafer in sequence to detect whether the solvent is evenly removed at each location. When it is detected that there is still residual solvent in a local area, the simulation platform marks the location on the simulated three-dimensional image as an abnormal point; S42, such as Figure 13 In the figure, c represents the abnormal point and d represents the outline of the abnormal point. The infrared sensor 5 is controlled to rotate continuously. During the rotation, the position of the transmitting end of the infrared sensor 5 is continuously adjusted by the electric shaft so that it always faces the abnormal point until the infrared sensor 5 returns to the position where the abnormal point was first obtained. The simulation platform records the points of each abnormal data obtained during the rotation of the infrared sensor 5, and then connects the points in series to obtain the outline of the abnormal point on the simulation platform. S43, such as Figure 14 , then confirm the position of the abnormal point on the partitioned heating unit 4, and then control the thermal compensation disk 7 to move radially along the partitioned heating unit 4 until it coincides with the abnormal point. The coincidence of the thermal compensation disk 7 and the contour of the abnormal point is obtained through the simulation platform. The control center controls the heating plate 72 in the overlapping area to be energized according to the coincidence of the two obtained from the simulation platform to achieve precise heating.

[0029] In step S42, among the points of abnormal data obtained during the rotation of the infrared sensor 5, when there is a point with obvious large deviation from the position of the abnormal point, the point with large deviation is eliminated and marked as another abnormal point. This can effectively avoid connecting two abnormal points in different positions in series, thereby improving the accuracy of the abnormal point contour finally obtained. Then, steps S41-S43 are repeated for the newly marked abnormal point until no abnormal point appears after the infrared sensor 5 rotates 360° continuously.

[0030] Figures 9-11As shown, the thermal compensation plate 7 includes a heat-conducting top plate 71 facing the partitioned heating unit 4, a heat-insulating layer 731 located below the heat-conducting top plate 71, a bottom plate 732 fixedly attached to the lower end of the heat-insulating layer 731, and a plurality of heating plates 72 fixedly embedded in the heat-conducting top plate 71. The lower end of each heating plate 72 is correspondingly provided with a selective power-on unit, which is arranged between the heat-conducting top plate 71 and the heat-insulating layer 731. The selective power-on unit includes a T-shaped conductive column 742 placed on the upper end of the heat-insulating layer 731, two insulating columns 741 fixedly connected to the lower end of the heating plate 72, and a step of the T-shaped conductive column 742 and an insulating column 742 fixedly connected to the bottom end. 741 and the electromagnetic sheet 744 fixedly embedded in the bottom plate 732. The ends of the two insulating columns 741 extend between the thermal insulation layer 731 and the thermal top plate 71. The upper end of the T-shaped conductive column 742 extends between the two insulating columns 741 and does not contact the lower end of the thermal top plate 71. The inner walls of the ends of the two insulating columns 741 close to each other are fixedly embedded with conductive contacts 701. The conductive contacts 701 are electrically connected to the heating sheet 72, and the conductive contacts 701 are located above the T-shaped conductive column 742. A magnetic patch is attached to the bottom of the T-shaped conductive column 742. There is a magnetic repulsion between the magnetic patch and the energized electromagnetic sheet 744.

[0031] After determining the overlapping area between the contour of the abnormal point and the thermal compensation disk 7 in the above step S4, the electromagnetic plate 744 in the overlapping area can be controlled to be energized to generate a magnetic repulsive force on the T-shaped conductive column 742, thereby pushing the T-shaped conductive column 742 to move upward so that it overlaps with the conductive contact piece 701, and then energizing the corresponding heating plate 72, thereby achieving targeted heating of the contour of the abnormal point of the wafer and the area within the contour. Compared with the first embodiment, the impact on other normal areas is further reduced, the solvent removal effect is better, and the film forming is more uniform.

[0032] After detecting the abnormal point, the abnormality monitoring unit can also determine the edge contour of the abnormal point. When performing targeted heating, the thermal compensation disk 7 can further reduce the actual heating area according to the contour, further improving the accuracy of the secondary heating of the low abnormal point and further reducing the impact on other areas.

[0033] It is worth noting that the magnetic structures involved in the two embodiments are made of high temperature resistant magnetic materials, such as aluminum nickel cobalt (AlNiCo), Sm2Co 17 Materials such as samarium cobalt (which can withstand temperatures up to around 800°C) prevent the related magnetic structure from failing at high temperatures when the solvent in the photoresist is removed by heating and baking (not exceeding 150°C).

[0034] In view of current actual needs, the protection scope of the above-mentioned implementation mode adopted in this application is not limited to this. Various changes made within the knowledge scope of technical personnel in this field without departing from the concept of this application still fall within the protection scope of the present invention.

Claims

1. A high-precision multi-zone semiconductor heating platform control system, characterized by: The invention comprises a control center installed on a heating platform and a wafer transfer module, a fume exhaust unit (3), a heating module and an abnormality monitoring unit connected to the control center signal. The control system also comprises a simulation platform for simulating the heating platform. The simulation platform is connected to the control center signal. The heating module comprises a partition heating unit (4) and a local heating unit located below the partition heating unit (4). The partition heating unit (4) is divided into a circular heating zone (41) and a plurality of annular heating zones (42) coaxial with the circular heating zone (41). The outermost annular heating zone (42) is equally divided into a plurality of arc heating zones with independent temperature control. The wafer transfer module comprises a conveyor plate (11) mounted on the bottom plate of the heating platform via an electric slide rail and three outer electric push rods (12) distributed in a ring array, the extended ends of the three outer electric push rods (12) all moveably penetrate the partition heating unit (4), and two open long grooves are cut on the conveyor plate (11) and correspond to the outer electric push rods (12); The abnormality monitoring unit comprises an infrared sensor (5) mounted on the bottom wall of the baking chamber via an annular electric slide rail, the lower end of the infrared sensor (5) is connected to a strong magnetic slider (501) via an electric rotating shaft, the strong magnetic slider (501) and the annular electric slide rail are matched with each other, the local heating unit comprises a ferromagnetic slider (61) corresponding to the strong magnetic slider (501), an inner electric push rod (62) fixedly connected to the lower end of the ferromagnetic slider (61), and a thermal compensation disk (7) fixedly connected to the end of the inner electric push rod (62), the thermal compensation disk (7) is located below the partitioned heating unit (4), and the thermal compensation disk (7) and the partitioned heating unit (4) are in contact with each other, a compensation cavity (201) is bored in the heating platform, and an annular slide groove corresponding to the annular electric slide rail is bored on the upper inner wall of the compensation cavity (201), the compensation cavity (201) is located directly below the partitioned heating unit (4), and the thermal compensation disk (7) is located in the compensation cavity (201).

2. A high-precision multi-zone semiconductor heating platform control system according to claim 1, characterized in that: The smoke exhaust unit (3) includes two smoke exhaust hoods (31), a corrugated duct (32) fixedly connected between the two smoke exhaust hoods (31), and a smoke exhaust duct (33) fixedly connected to the outer end of the smoke exhaust hood (31) on the side away from the conveying plate (11), the corrugated duct (32) connects the two smoke exhaust hoods (31), the inner walls of the two smoke exhaust hoods (31) are each provided with a plurality of air suction holes (301), the smoke exhaust duct (33) passes through the side wall of the baking chamber, the smoke exhaust hood (31) connected to the smoke exhaust duct (33) is fixed to the bottom wall of the baking chamber, and the other smoke exhaust hood (31) is connected to the top wall of the baking chamber via an electric push rod, and when the heights of the two are consistent, the inner walls of the two are complete annular and coaxial with the partitioned heating unit (4).

3. The high-precision multi-zone semiconductor heating platform control system according to claim 1, characterized in that: The center lines of the inner electric push rod (62) and the thermal compensation disk (7), as well as the laser emitting end of the infrared sensor (5), are all oriented toward the center axis of the partitioned heating unit (4).

4. The high-precision multi-zone semiconductor heating platform control system according to claim 1, characterized in that: The heating temperatures of the circular heating zone (41) and the plurality of annular heating zones (42) gradually increase in a direction from the center outward, and the temperature difference between the edge and the middle of the wafer is no more than 3°C.

5. The high-precision multi-zone semiconductor heating platform control system according to claim 3, characterized in that: The thermal compensation plate (7) comprises a heat-conducting top plate (71) facing the partitioned heating unit (4), a heat-insulating layer (731) located below the heat-conducting top plate (71), a bottom plate (732) fixedly attached to the lower end of the heat-insulating layer (731), and a plurality of heating plates (72) respectively fixedly embedded in the heat-conducting top plate (71), wherein a selective power-on unit is correspondingly provided at the lower end of each heating plate (72), and the selective power-on unit is provided between the heat-conducting top plate (71) and the heat-insulating layer (731).

6. The high-precision multi-zone semiconductor heating platform control system according to claim 5, characterized in that: The selective power supply unit comprises a T-shaped conductive column (742) placed on the upper end of the thermal insulation layer (731), two insulating columns (741) fixedly connected to the lower end of the heating plate (72), an elastic tube (743) fixedly connected to the steps of the T-shaped conductive column (742) and between the insulating columns (741), and an electromagnetic plate (744) fixedly embedded in the bottom plate (732), the ends of the two insulating columns (741) both extend between the thermal insulation layer (731) and the thermal conductive top plate (71), and the upper end of the T-shaped conductive column (742) extends between the two insulating columns (741) and does not contact the lower end of the thermal conductive top plate (71).

7. The high-precision multi-zone semiconductor heating platform control system according to claim 6, characterized in that: Conductive contact pieces (701) are fixedly embedded in the inner walls of the two insulating pillars (741) at one end close to each other. The conductive contact pieces (701) are electrically connected to the heating piece (72), and the conductive contact pieces (701) are located above the T-shaped conductive pillars (742). A magnetic patch is attached to the bottom of the T-shaped conductive pillars (742).

8. The high-precision multi-zone semiconductor heating platform control system according to claim 7, characterized in that: The heating control method includes the following steps: S1. First, the wafer coated with the photoresist is transferred to the baking chamber via the conveyor plate (11), and then the external electric push rod (12) is controlled to extend so as to pass through the conveyor plate (11) and lift the wafer. Then, the conveyor plate (11) and the external electric push rod (12) are controlled to reset in sequence so that the wafer falls on the partitioned heating unit (4). Then, the exhaust hood (31) near the conveyor plate (11) is controlled to move downward and contact the bottom wall of the baking chamber. S2, the control center controls the zone heating unit (4) to start heating, and simultaneously starts the smoke exhaust unit. During heating, the heating temperature of the circular heating zone (41) and the plurality of annular heating zones (42) is controlled to gradually increase from the inside to the outside, and the maximum temperature difference on the wafer surface is controlled to be no more than 3°C; S3. Sampling the exhaust gas from the fume exhaust unit at regular intervals, and analyzing the solvent characteristic ion fragments by gas chromatography-mass spectrometry until the solvent concentration in the solvent characteristic ion fragments is less than 50 ppm; S4. The wafer surface is scanned in sequence by the abnormality monitoring unit to detect the volatilization of the surface solvent. When the abnormality of incomplete volatilization of the solvent is detected, the abnormal point is heated in a targeted manner to assist the volatilization of the solvent, so as to improve the uniformity of the film on the wafer surface after baking.

9. The high-precision multi-zone semiconductor heating platform control system according to claim 8, characterized in that: The specific operations of step S4 are: S41, first, using the simulation platform, simulate the three-dimensional image in the baking chamber, then control the abnormality monitoring unit to move around the infrared sensor (5), so that the infrared sensor (5) sequentially scans various locations on the upper surface of the wafer to detect whether the solvent in each location is evenly removed. When it is detected that there is still residual solvent in a local area, the simulation platform marks the location on the simulated three-dimensional image and records it as an abnormal point; S42, continue to control the infrared sensor (5) to rotate, and during the rotation, continuously adjust the position of the infrared sensor (5) transmitting end through the electric shaft so that it always faces the abnormal point, until the infrared sensor (5) returns to the position where the abnormal point was first obtained, and record the points of each abnormal data obtained during the rotation of the infrared sensor (5), and then connect the points in series to obtain the outline of the abnormal point; S43, then confirm the position of the abnormal point on the partition heating unit (4), and then control the thermal compensation disk (7) to move radially along the partition heating unit (4) until it coincides with the abnormal point, and obtain the coincidence of the thermal compensation disk (7) and the abnormal point contour through the simulation platform. The control center controls the heating plate (72) in the coincidence area to be energized based on the coincidence of the two obtained from the simulation platform, so as to achieve precise heating.

10. The high-precision multi-zone semiconductor heating platform control system according to claim 9, characterized in that: In step S42, among the points of abnormal data obtained during the rotation of the infrared sensor (5), when there is a point with a significant position deviation from the abnormal point, the point with the significant deviation is removed and marked as another abnormal point, and then steps S41-S43 are repeated for the newly marked abnormal point until the infrared sensor (5) rotates 360° continuously without any abnormal point appearing.

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