Method for growing germanium-silicon epitaxial film and semiconductor process equipment
By depositing and diffusing a germanium transition layer on a silicon substrate to form a germanium-silicon transition layer, combined with appropriate process gas and temperature control, the problems of stress increase and low production capacity of germanium-silicon epitaxial films in the existing technology are solved, and high-stress and efficient production of germanium-silicon epitaxial films are achieved, thereby improving the performance of PMOS devices.
Patent Information
- Application Number
- CN202510812325.8
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-06-17
- Publication Date
- 2025-10-03
AI Technical Summary
The existing method for growing germanium silicon epitaxial thin films is difficult to effectively increase the stress that can be applied to the germanium silicon epitaxial thin films, and the production capacity is low.
A germanium-silicon transition layer is formed by depositing a germanium transition layer on a silicon substrate and diffusing it therewith, and then a germanium-silicon layer and a silicon layer are deposited thereon. The thickness and germanium concentration of the germanium transition layer are adjusted to meet the requirements of the germanium-silicon layer. Combined with the control of process gas and temperature, the stress and thickness of the germanium-silicon layer are optimized.
The stress limit that can be applied to the SiGe epitaxial film is increased, the performance of the PMOS device is improved, and the defect rate is reduced through the diffusion interface, the growth rate is increased, and the production capacity is improved.
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Figure CN120749012A_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to the field of semiconductor technology, and in particular to a method for growing a germanium silicon epitaxial thin film and semiconductor process equipment. Background Art
[0002] Advanced silicon-based manufacturing is one of the most widely used semiconductor manufacturing processes. Currently, PMOS device performance is one of the primary factors limiting device performance. To improve PMOS device performance, compressive stress is typically applied to the PMOS channel to enhance hole mobility. The SiGe epitaxial growth process is widely used in advanced silicon-based manufacturing due to its advantages, including high crystal quality, high controllable doping concentration, and wide stress control range.
[0003] In related technologies, when growing a silicon-germanium epitaxial film on a silicon substrate, a silicon-germanium transition layer, a silicon-germanium layer, and a silicon layer are deposited layer by layer on the surface of the silicon substrate. By increasing the thickness and concentration of the silicon-germanium layer, the stress that can be applied by the silicon-germanium layer can be increased, and thus, the stress that can be applied by the silicon-germanium epitaxial film can be increased, thereby improving the hole migration capability of the PMOS device. However, there is limited room for increasing the thickness of the silicon-germanium layer, and increasing the concentration of germanium in the silicon-germanium layer requires a corresponding increase in the concentration of germanium in the silicon-germanium transition layer between the silicon substrate and the silicon-germanium layer. Depositing a silicon-germanium transition layer with a higher germanium concentration requires a lower growth temperature, resulting in a low growth rate and affecting production capacity. Summary of the Invention
[0004] The purpose of the present invention is to provide a method for growing germanium silicon epitaxial film and semiconductor process equipment to alleviate the technical problems of the existing method for growing germanium silicon epitaxial film, such as difficulty in increasing the stress that can be applied to the germanium silicon epitaxial film and low production capacity.
[0005] The method for growing a silicon-germanium epitaxial film provided by the present invention comprises:
[0006] In the first deposition step, a germanium transition layer is deposited on the silicon substrate;
[0007] a diffusion step, raising the process temperature to allow the germanium transition layer and the silicon substrate to diffuse into each other, thereby forming a germanium-silicon transition layer;
[0008] a second deposition step of depositing a silicon germanium layer on the silicon germanium transition layer;
[0009] The thickness of the germanium transition layer is positively correlated with the germanium concentration of the germanium silicon layer.
[0010] Preferably, as an implementation method, the thickness of the germanium transition layer is 3 to 5 nm.
[0011] Preferably, as an implementation method, in the first deposition step, the process gas includes germane, the flow rate of the germane is 300-2000 sccm, the process temperature is 450-550° C., and the process time is 1-3 minutes.
[0012] Preferably, as an implementable embodiment, in the diffusion step, the process temperature is 500-700° C., and the process time is 1-3 minutes.
[0013] Preferably, as an implementation method, in the second deposition step, the process gas includes germane and dichlorosilane, the flow rate of the germane is 50-200 sccm, the flow rate of the dichlorosilane is 50-500 sccm, the process temperature is 500-700°C, and the process time is 5-10 minutes.
[0014] Preferably, as an embodiment, after the second deposition step, the method further comprises:
[0015] The third deposition step is to deposit a silicon layer on the silicon germanium layer.
[0016] Preferably, as an implementation method, in the third deposition step, the process gas includes silane or dichlorosilane, the flow rate of the silane or dichlorosilane is 150-500 sccm, the process temperature is 650-800°C, and the process time is 3-10 minutes.
[0017] Preferably, as an embodiment, the process gas in the second deposition step includes a boron doping source;
[0018] And / or, the process gas in the third deposition step includes a boron doping source.
[0019] Preferably, as an implementation method, in the second deposition step, the boron doping source includes diborane, and the flow rate of the diborane is 10 to 200 sccm;
[0020] And / or, in the third deposition step, the boron doping source includes diborane, and the flow rate of the diborane is 60-300 sccm.
[0021] Preferably, as an implementation method, in the second deposition step, the process gas includes hydrogen chloride, and the flow rate of the hydrogen chloride is 30 to 500 sccm;
[0022] And / or, in the third deposition step, the process gas includes hydrogen chloride, and the flow rate of the hydrogen chloride is 30-200 sccm.
[0023] Preferably, as an embodiment, before the first deposition step, the method further comprises:
[0024] Hydrogen is introduced at a flow rate of 5 to 40 slm.
[0025] The semiconductor process equipment provided by the present invention includes a process chamber, an air intake component, a heating component and a controller, and is characterized in that the controller includes at least one processor and at least one memory, and the memory stores a computer program, and when the computer program is executed by the processor, it implements the above-mentioned method of growing germanium silicon epitaxial film.
[0026] Compared with the prior art, the present invention has the following beneficial effects:
[0027] The first deposition step and the diffusion step in the present invention replace the step of directly depositing a germanium-silicon transition layer on a silicon substrate in the related art. Before growing the thin film, the deposition thickness of the germanium transition layer can be determined according to the requirements of the germanium-silicon layer for the germanium concentration. The greater the target germanium concentration of the germanium-silicon layer, the thicker the germanium transition layer needs to be deposited. When growing the thin film, a germanium transition layer of corresponding thickness can be deposited according to the predetermined deposition thickness of the germanium transition layer, and a germanium-silicon transition layer with a suitable germanium concentration can be obtained through diffusion to meet the requirements of the germanium-silicon layer for the germanium concentration of the germanium-silicon transition layer.
[0028] It should be noted that by adjusting the thickness of the germanium transition layer in the first deposition step, germanium-silicon transition layers with different germanium concentrations can be obtained. This improves the controllability of the surface germanium concentration of the germanium-silicon transition layer, which has a positive effect on increasing the germanium concentration of the germanium-silicon layer to the maximum extent, thereby increasing the stress limit that the germanium-silicon layer can exert. On the other hand, if the germanium concentration of the germanium-silicon transition layer meets the requirements, the thickness of the germanium-silicon transition layer can be reduced to increase the thickness of the germanium-silicon layer to the maximum extent, increase the stress that the germanium-silicon layer can exert, and thus increase the stress that the germanium-silicon epitaxial film can exert. Therefore, when the germanium-silicon epitaxial film obtained by the method provided by the present invention is applied to a PMOS device, the performance of the PMOS device can be improved.
[0029] In addition, the present invention first deposits a germanium transition layer on a silicon substrate and then heats the layer to allow the germanium transition layer and the silicon substrate to diffuse into each other. The interface of the formed germanium-silicon transition layer is a diffusion gradient interface, which has a lower probability of forming defects and better quality. Compared with depositing a germanium-silicon transition layer, the growth rate of the germanium transition layer is faster, which is beneficial to improving production capacity. BRIEF DESCRIPTION OF THE DRAWINGS
[0030] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are merely embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on the provided drawings without paying any creative work.
[0031] Figure 1 Schematic diagram of the structure of a silicon-germanium epitaxial film in an embodiment of the present invention;
[0032] Figure 2 A schematic flow chart of a method for growing a silicon-germanium epitaxial thin film provided in an embodiment of the present invention;
[0033] Figure 3 A schematic structural diagram of semiconductor process equipment provided by an embodiment of the present invention. DETAILED DESCRIPTION
[0034] In the related art, there is a germanium silicon epitaxial film, which is formed by sequentially depositing a germanium silicon transition layer, a germanium silicon layer, and a silicon layer on a silicon substrate. The silicon substrate is etched in the front process or naturally exposed. The germanium silicon transition layer is generally a low-concentration germanium silicon film (germanium concentration is 20% to 35%) grown at medium temperature (600℃~750℃), the germanium silicon layer is generally a high-concentration germanium silicon film (germanium concentration is 35% to 75%) grown at low temperature, and the silicon layer is generally a silicon film grown at high temperature. Among them, the main function of the germanium silicon layer is to provide stress. The core goal is to provide as much stress as possible. The stress magnitude is positively correlated with the thickness and germanium concentration of the germanium silicon layer; the germanium silicon transition layer is mainly used for the transition between the silicon substrate and the germanium silicon layer. The core goal is to improve the crystal quality of the germanium silicon layer and reduce the defects of the germanium silicon layer; the silicon layer is mainly used for subsequent interconnection. Therefore, in order to increase the stress that the germanium silicon layer can provide, it is necessary to increase the germanium concentration and / or thickness of the germanium silicon layer.
[0035] Because the overall thickness of the film is determined and the thickness of the silicon layer is basically determined, and the germanium-silicon transition layer itself has certain requirements for thickness (generally 5 to 20 nm) in order to play a good transition role, the thickness of the germanium-silicon layer is limited. In order to maximize the concentration of germanium in the germanium-silicon layer, the concentration of the germanium-silicon transition layer must also be very high. However, a very high concentration of germanium-silicon requires a lower growth temperature, resulting in a low growth rate and affecting production capacity.
[0036] Based on this, the present invention provides a method for growing a germanium silicon epitaxial film to ensure production capacity while improving the stress that the germanium silicon layer can provide. The structure of the formed germanium silicon epitaxial film is as follows: Figure 1 shown.
[0037] The technical solution of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the embodiments described are only some embodiments of the present invention, not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making any creative efforts are within the scope of protection of the present invention.
[0038] The present invention will be further described in detail below through specific implementation examples in conjunction with the accompanying drawings.
[0039] Figure 2A method for growing a silicon-germanium epitaxial film provided in one embodiment of the present invention includes:
[0040] S202, a first deposition step, depositing a germanium transition layer on the silicon substrate;
[0041] S204, a diffusion step, raising the process temperature to allow the germanium transition layer and the silicon substrate to diffuse into each other, forming a germanium-silicon transition layer;
[0042] S206, a second deposition step, depositing a silicon-germanium layer on the silicon-germanium transition layer;
[0043] The thickness of the germanium transition layer is positively correlated with the germanium concentration of the germanium silicon layer 103 .
[0044] The first deposition step and diffusion step in this embodiment replace the step of directly depositing a germanium-silicon transition layer on a silicon substrate in related technologies. Before growing the thin film, the deposition thickness of the germanium transition layer can be determined based on the germanium concentration requirements of the germanium-silicon layer 103. The greater the target germanium concentration of the germanium-silicon layer 103, the thicker the germanium transition layer needs to be deposited. When growing the thin film, a germanium transition layer of corresponding thickness can be deposited based on the predetermined deposition thickness of the germanium transition layer, and through diffusion, a germanium-silicon transition layer 102 with a suitable germanium concentration is obtained to meet the germanium concentration requirements of the germanium-silicon layer 103.
[0045] It should be noted that by adjusting the thickness of the germanium transition layer in the first deposition step, a germanium-silicon transition layer 102 with different germanium concentrations can be obtained. This improves the controllability of the surface germanium concentration of the germanium-silicon transition layer 102, which has a positive effect on maximizing the germanium concentration of the germanium-silicon layer 103 and thereby increasing the stress limit that the germanium-silicon layer 103 can exert. Furthermore, if the germanium concentration of the germanium-silicon transition layer 102 meets the required value, the thickness of the germanium-silicon transition layer 102 can be reduced to maximize the thickness of the germanium-silicon layer 103, thereby increasing the stress that the germanium-silicon layer 103 can exert, and thus increasing the stress that the germanium-silicon epitaxial film can exert. Therefore, when the germanium-silicon epitaxial film obtained by the method provided in this embodiment is applied to a PMOS device, the performance of the PMOS device can be improved.
[0046] In addition, in this embodiment, a germanium transition layer is first deposited on the silicon substrate 101, and then the temperature is increased to allow the germanium transition layer and the silicon substrate 101 to diffuse into each other. The interface of the formed germanium-silicon transition layer 102 is a diffusion gradient interface, which has a lower probability of forming defects and better quality. Compared with depositing a germanium-silicon transition layer, the growth rate of the germanium transition layer is faster, which is beneficial to improving production capacity.
[0047] Specifically, the thickness of the germanium transition layer can be set to 3-5 nm to meet the requirements of most germanium-SiGe epitaxial films for the germanium concentration of the germanium-SiGe transition layer 102, thereby meeting the requirements of most germanium-SiGe epitaxial films for the stress that can be applied.
[0048] In the first deposition step, germanium can be used as the process gas, with the germanium flow rate set to 300-2000 sccm and the process temperature set to 450-550°C. It should be noted that the germanium transition layer also has a faster growth rate at a lower process temperature (450-550°C), generally reaching 2nm / min, with higher production capacity. The process duration of the first deposition step is positively correlated with the thickness of the germanium transition layer. Specifically, the process duration can be set to 1-3 minutes, which can produce a 3-5nm germanium transition layer, meeting the germanium concentration requirements of the germanium-silicon layer 103 in most germanium-silicon epitaxial films for the germanium-silicon transition layer 102.
[0049] During the diffusion step, the process temperature can be set to 500-700°C, which allows for smooth interdiffusion between the germanium transition layer and the silicon substrate 101, with good diffusion efficiency and speed. The process duration of the diffusion step is positively correlated with the thickness of the germanium transition layer. Specifically, the process duration can be set to 1-3 minutes, achieving an appropriate diffusion degree between a 3-5 nm germanium transition layer and the silicon substrate 101.
[0050] In the second deposition step, germane and dichlorosilane can be selected as process gases, the flow rate of germane is set to 50-200 sccm, the flow rate of dichlorosilane is set to 50-500 sccm, the process temperature is set to 500-700°C, and the process time is set to 5-10 minutes, to form a germanium silicon layer 103.
[0051] After the second deposition step, the method further includes a third deposition step of depositing a silicon layer 104 on the silicon-germanium layer 103 .
[0052] In the third deposition step, silane or dichlorosilane can be used as the process gas, the flow rate of silane or dichlorosilane is set to 150-500 sccm, the process temperature is set to 650-800°C, and the process time is set to 3-10 minutes to form the silicon layer 104. After the third deposition step is completed, the silicon layer 104 can be formed. Figure 1 The structure shown.
[0053] A boron doping source may be added to the process gas in the second deposition step to reduce the resistivity of the silicon germanium layer 103 . The flow rate of the boron doping source is negatively correlated with the resistivity of the silicon germanium layer 103 .
[0054] Specifically, diborane may be used as a boron doping source in the second deposition step, and the flow rate of diborane may be set to 10-200 sccm.
[0055] A boron doping source may be added to the process gas in the third deposition step to reduce the resistivity of the silicon layer 104 . The flow rate of the boron doping source is negatively correlated with the resistivity of the silicon layer 104 .
[0056] Specifically, diborane may be used as a boron doping source in the third deposition step, and the flow rate of diborane may be set to 60-300 sccm.
[0057] Hydrogen chloride may be added to the process gas in the second deposition step, and the flow rate of hydrogen chloride may be set to 30-500 sccm, which can improve the crystal quality of the silicon germanium layer 103 and can also be used for selective growth.
[0058] Hydrogen chloride may be added to the process gas in the third deposition step, and the flow rate of hydrogen chloride may be set to 30-200 sccm, which can improve the crystal quality of the silicon layer 104 and can also be used for selective growth.
[0059] Before the first deposition step, the method provided in this embodiment may further include: introducing hydrogen gas at a flow rate of 5 to 40 slm. In this way, the hydrogen environment in the process chamber is maintained throughout the entire process of growing the silicon-germanium epitaxial film, which helps improve the quality of crystal growth.
[0060] An embodiment of the present invention provides a method for growing a silicon-germanium epitaxial film, the method comprising:
[0061] Hydrogen is introduced into the process chamber to raise the temperature of the process chamber from room temperature to 450°C to 550°C.
[0062] Germanium and hydrogen are introduced at a process temperature of 450°C to 550°C, with a germanium flow rate of 300 sccm to 2000 sccm and a hydrogen flow rate of 5 slm to 40 slm. The process takes 1 to 3 minutes. It should be noted that the thickness of the germanium transition layer varies depending on the germanium concentration in the silicon-germanium layer 103. The thickness of the germanium transition layer is proportional to the germanium concentration in the silicon-germanium layer 103 and is generally 3 nm to 5 nm.
[0063] Stop the germanium and continue to introduce hydrogen while keeping the hydrogen flow constant, and raise the process temperature to 500° C. to 700° C. During the temperature increase, the germanium transition layer diffuses with the silicon substrate 101 to form a germanium-silicon transition layer 102 .
[0064] At a process temperature of 500°C to 700°C, germanium, dichlorosilane, and hydrogen are introduced, with germanium flow rates of 50 sccm to 200 sccm, dichlorosilane flow rates of 50 sccm to 500 sccm, and hydrogen flow rates remaining constant. The process time is 5 to 10 minutes, thereby forming the silicon-germanium layer 103. A boron doping source, such as diborane, may be introduced at a flow rate of 10 sccm to 200 sccm, which is inversely proportional to the resistivity of the silicon-germanium layer 103. Hydrogen chloride may also be introduced at a flow rate of 30 sccm to 500 sccm.
[0065] Stop the production of germane, dichlorosilane, diborane and hydrogen chloride, and increase the reaction temperature to 650°C to 800°C.
[0066] At a process temperature of 650°C to 800°C, silane or dichlorosilane is introduced at a flow rate of 150 sccm to 500 sccm to form the silicon layer 104. Diborane and hydrogen chloride may be introduced at a flow rate of 60 sccm to 300 sccm for diborane and 30 sccm to 200 sccm for hydrogen sulfide.
[0067] Turn off silane or dichlorosilane, diborane, and hydrogen chloride, and cool the process chamber temperature to room temperature.
[0068] Figure 3 FIG. 1 is a schematic structural diagram of a semiconductor process equipment 300 according to an embodiment of the present invention.
[0069] like Figure 3 As shown, the semiconductor process equipment 300 includes a process chamber 310, an air intake component 320, a heating component 330 and a controller. The controller includes at least one processor and at least one memory. The memory stores a computer program. When the computer program is executed by the processor, the method of any of the above embodiments is implemented.
[0070] For example, the controller can be a host computer or a slave computer. Specifically, the controller can control the opening of the valve of the gas inlet assembly 320 to introduce the corresponding process gas into the process chamber 310. The controller can also control the opening and closing of the valve of the gas inlet assembly 320 to control the flow rate of the process gas. The controller can also control the heating assembly 330 to heat the process chamber 310 to adjust the process temperature. The controller can also control the exhaust assembly 340 to exhaust the interior of the process chamber 310 to control the pressure inside the process chamber 310 and discharge reaction byproducts.
[0071] The semiconductor process equipment 300 of the embodiment of the present application may be a chemical vapor deposition equipment. The embodiment of the present application does not limit the type of the semiconductor process equipment 300.
[0072] The semiconductor process equipment 300 provided in the embodiment of the present invention has the same technical features as the method for growing a silicon-germanium epitaxial film provided in the above embodiment, and therefore can solve the same technical problems and achieve the same technical effects.
[0073] This embodiment also provides a machine-readable storage medium, which stores machine-executable instructions. When the machine-executable instructions are called and executed by a processor, the machine-executable instructions prompt the processor to implement the above-mentioned method for growing a germanium silicon epitaxial film.
[0074] Those skilled in the art will clearly understand that, for the convenience and brevity of description, the specific working processes of the above-described equipment and devices can refer to the corresponding processes in the aforementioned method embodiments and will not be repeated here.
[0075] If the functions are implemented in the form of software functional units and sold or used as independent products, they can be stored in a non-volatile computer-readable storage medium that is executable by a processor. Based on this understanding, the technical solution of the present invention, or the part that contributes to the prior art, or the part of the technical solution, can be embodied in the form of a software product. The computer software product is stored in a storage medium and includes several instructions for enabling a computer device (which can be a personal computer, server, or network device, etc.) to execute all or part of the steps of the method described in each embodiment of the present invention. The aforementioned storage medium includes various media that can store program codes, such as a USB flash drive, a mobile hard disk, a read-only memory (ROM), a random access memory (RAM), a magnetic disk, or an optical disk.
[0076] In the description of the present invention, it should be noted that the terms “first” and “second” are only used for descriptive purposes and should not be understood as indicating or implying relative importance.
[0077] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the above embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the above embodiments, or replace some or all of the technical features therein with equivalents. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.
Claims
1. A method for growing a silicon-germanium epitaxial thin film, characterized in that: include: In the first deposition step, a germanium transition layer is deposited on the silicon substrate; a diffusion step, raising the process temperature to allow the germanium transition layer and the silicon substrate to diffuse into each other, thereby forming a germanium-silicon transition layer; a second deposition step of depositing a silicon germanium layer on the silicon germanium transition layer; The thickness of the germanium transition layer is positively correlated with the germanium concentration of the germanium silicon layer.
2. The method for growing a silicon-germanium epitaxial thin film according to claim 1, wherein: The thickness of the germanium transition layer is 3-5 nm.
3. The method for growing a silicon-germanium epitaxial thin film according to claim 1, wherein: In the first deposition step, the process gas includes germane, the flow rate of the germane is 300-2000 sccm, the process temperature is 450-550° C., and the process time is 1-3 minutes.
4. The method for growing a silicon-germanium epitaxial thin film according to claim 1, wherein: In the diffusion step, the process temperature is 500-700° C., and the process time is 1-3 minutes.
5. The method for growing a silicon-germanium epitaxial thin film according to claim 1, wherein: In the second deposition step, the process gas includes germane and dichlorosilane, the flow rate of the germane is 50-200 sccm, the flow rate of the dichlorosilane is 50-500 sccm, the process temperature is 500-700° C., and the process time is 5-10 minutes.
6. The method for growing a silicon-germanium epitaxial thin film according to any one of claims 1 to 5, characterized in that: After the second deposition step, the method further comprises: The third deposition step is to deposit a silicon layer on the silicon germanium layer.
7. The method for growing a silicon-germanium epitaxial thin film according to claim 6, wherein: In the third deposition step, the process gas includes silane or dichlorosilane, the flow rate of the silane or dichlorosilane is 150-500 sccm, the process temperature is 650-800° C., and the process time is 3-10 minutes.
8. The method for growing a silicon-germanium epitaxial thin film according to claim 6, wherein: The process gas in the second deposition step includes a boron doping source; And / or, the process gas in the third deposition step includes a boron doping source.
9. The method for growing a silicon-germanium epitaxial thin film according to claim 8, wherein: In the second deposition step, the boron doping source includes diborane, and the flow rate of the diborane is 10 to 200 sccm; And / or, in the third deposition step, the boron doping source includes diborane, and the flow rate of the diborane is 60-300 sccm.
10. The method for growing a silicon-germanium epitaxial thin film according to claim 6, wherein: In the second deposition step, the process gas includes hydrogen chloride, and the flow rate of the hydrogen chloride is 30 to 500 sccm; And / or, in the third deposition step, the process gas includes hydrogen chloride, and the flow rate of the hydrogen chloride is 30-200 sccm.
11. The method for growing a silicon-germanium epitaxial thin film according to claim 6, wherein: Before the first deposition step, the method further comprises: Hydrogen is introduced at a flow rate of 5 to 40 slm.
12. A semiconductor process equipment comprising a process chamber, an air inlet assembly, a heating assembly and a controller, characterized in that: The controller includes at least one processor and at least one memory, wherein a computer program is stored in the memory, and when the computer program is executed by the processor, the method for growing a silicon-germanium epitaxial thin film according to any one of claims 1 to 11 is implemented.