Vertical furnace system capable of splitting

Abstract

The invention discloses a split vertical furnace system which defines a heat treatment area, a split area, an inlet communicated with the heat treatment area and an outlet communicated with the split area, and the split area and the heat treatment area are arranged adjacently and communicated with each other. The split vertical furnace system comprises at least one vertical furnace, at least one splitting assembly and a wafer transmission assembly, the vertical furnace is used for carrying out heat treatment on a wafer, and the splitting assembly is used for carrying out splitting on the wafer subjected to heat treatment by the vertical furnace. The wafer transmission assembly is configured to be capable of automatically transmitting wafers from the inlet to the vertical furnace of the heat treatment area for heat treatment, and after the wafers are subjected to heat treatment by the vertical furnace, the wafers are automatically transmitted to the wafer splitting area, and the split wafers are sent out from the outlet. According to the invention, the device output rate can be improved, wafer pollution can be reduced, and client device cost can be reduced.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor manufacturing, in particular to a semiconductor manufacturing device, and more particularly to a vertical furnace system capable of splitting wafers. Background Art

[0002] Currently, three common heat treatment methods are used in semiconductor thermal processing: oxidation, diffusion, and annealing. Oxidation involves placing a silicon wafer in a high-temperature furnace and introducing an oxygen-containing gas to oxidize the surface of the wafer, forming a silicon oxide film that prevents dopants from entering the silicon surface. Diffusion involves incorporating dopant elements into the silicon substrate at high temperatures, using the principle of thermal diffusion to achieve a specific concentration distribution according to process requirements, thereby altering the material's conductivity and forming the semiconductor device structure. Annealing is a heating process that induces specific physical and chemical changes in the wafer. This heat treatment can eliminate lattice defects on the wafer.

[0003] Thermal reactors are required in all semiconductor heat treatment processes. Vertical furnaces are typically used for processes such as thermal oxidation, diffusion, and annealing for wafers larger than 8 inches. The reasons for this are as follows: First, in a vertical furnace, the silicon wafers are placed horizontally, preventing the carrier boat from bending due to gravity. The vertical furnace's inherent upward heat flow ensures more uniform thermal oxidation. Second, automation is easier. Furthermore, they offer improved cleanliness and reduced dust generation. Furthermore, vertical furnaces are smaller and require less floor space.

[0004] For example, in the debonding process of some advanced packaging processes, ion-implanted wafers are placed in a vertical furnace for heat treatment before being sent to a wafer splitter for splitting. However, in existing technology, vertical furnaces and wafer splitters are often located in different areas of the factory (for example, vertical furnaces are generally placed in the front-end wafer manufacturing area, while wafer splitters are placed in the back-end packaging area). Many packaging plants do not even have vertical furnaces. If heat treatment is required, it must be outsourced. This not only increases process flow time and reduces production efficiency, but more seriously, it greatly increases the chances of wafers being exposed to the atmosphere and other non-clean spaces. The wafer transfer process requires multiple manual operations, which dramatically increases the risk of wafer fragmentation and contamination. In some wafer thinning and material layer transfer processes, the wafers also need to be heat treated before splitting, and therefore face the same problems. Summary of the Invention

[0005] One advantage of the present invention is that it can combine a semiconductor heat treatment process that takes a long time with a subsequent splitting process that takes a short time, thereby effectively improving the semiconductor processing efficiency without increasing the workpiece required for the two processes.

[0006] Another advantage of the present invention is that it can realize the automation of wafer thermal treatment and subsequent processes without increasing additional floor space.

[0007] Another advantage of the present invention is that the entire process of heat treatment and splitting is carried out in a relatively closed environment, so that the wafers finally processed have a higher cleanliness.

[0008] To achieve at least one of the above advantages, the present invention provides a splittable vertical furnace system, wherein the splittable vertical furnace system defines a heat treatment zone, a splitting zone, an inlet communicating with the heat treatment zone, and an outlet communicating with the splitting zone, wherein the splitting zone and the heat treatment zone are disposed adjacent to and communicate with each other, wherein the splittable vertical furnace system comprises:

[0009] at least one vertical furnace for heat treating the wafers;

[0010] At least one splitting assembly, used for splitting the wafer after heat treatment in the vertical furnace;

[0011] A wafer transfer assembly is configured to automatically transfer the wafer from the inlet to the vertical furnace in the heat treatment area for heat treatment, and after the wafer is heat treated in the vertical furnace, automatically transfer the wafer to the splitting area and send the split wafer out from the outlet.

[0012] In an optional embodiment of the present invention, the wafer transfer assembly includes a first transfer component, which is configured to transfer the wafer that needs heat treatment from the inlet to the vertical furnace located in the heat treatment area, and after the wafer is heat treated by the vertical furnace, the heat-treated wafer can be transferred from the heat treatment area to the splitting area, and after the wafer is split by the splitting assembly in the splitting area, the split wafer can be transferred out of the splitting area through the outlet.

[0013] In another optional embodiment, the wafer transfer assembly includes a first transfer member and a second transfer member, the first transfer member is configured to transfer the wafer that needs heat treatment from the inlet to the vertical furnace located in the heat treatment area, and the second transfer member is configured to transfer the heat-treated wafer from the heat treatment area to the splitting area after the wafer is heat-treated by the vertical furnace, and after the wafer is split by the splitting assembly in the splitting area, the split wafer can be transferred out of the splitting area through the outlet.

[0014] In another optional embodiment, the wafer transfer assembly includes a first transfer member and a second transfer member, the first transfer member is configured to transfer the wafer that needs heat treatment from the inlet to the vertical furnace located in the heat treatment area, and is configured to transfer the heat-treated wafer from the heat treatment area to the splitting area after the wafer is heat-treated by the vertical furnace, and the second transfer member is configured to transfer the split wafer from the splitting area through the outlet after the wafer is split by the splitting assembly in the splitting area.

[0015] In another optional embodiment, the wafer transfer assembly includes a first transfer member, a second transfer member and a third transfer member. The first transfer member is configured to transfer the wafer that needs heat treatment from the inlet to the vertical furnace located in the heat treatment area. The second transfer member is configured to transfer the heat-treated wafer from the heat treatment area to the splitting area after the wafer is heat-treated by the vertical furnace. The third transfer member is configured to transfer the split wafer from the splitting area through the outlet after the wafer is split by the splitting assembly in the splitting area.

[0016] According to an embodiment of the present invention, the splittable vertical furnace system includes a common transfer assembly, wherein the common transfer assembly is configured to be interposed between the entrance and the exit to transfer a wafer cassette carrying wafers between the entrance and the exit.

[0017] According to one embodiment of the present invention, the splittable vertical furnace system includes a loading area adjacent to the heat treatment area and a loading robot arranged between the loading area and the entrance, wherein the loading robot is configured to automatically transfer the wafer box with the wafer located in the loading area to the common transfer assembly located at the entrance; and / or, the splittable vertical furnace system includes an unloading area adjacent to the exit and an unloading robot arranged between the unloading area and the exit, wherein the unloading robot is configured to automatically transfer the wafer box on the wafer transfer assembly at the exit to the unloading area.

[0018] According to one embodiment of the present invention, the wafer splitting assembly includes a wafer splitting unit, a wafer carrying unit, and an alignment unit. The wafer carrying unit has a carrying space, two side openings communicating with the carrying space from both sides, and a front opening and a rear opening communicating with the carrying space from the front and back. The wafer carrying unit is provided with a plurality of carrying slots facing the front opening on the inner walls on both sides forming the carrying space, wherein the plurality of carrying slots are arranged at equal intervals. The wafer transfer assembly is configured to transfer the wafers that have been heat-treated in the vertical furnace from the front opening to the carrying slots.

[0019] The split unit includes a plurality of split members, wherein the plurality of split members are also arranged at intervals along the direction in which the plurality of bearing slots are arranged;

[0020] The alignment unit is configured to align a middle portion of a sidewall of the wafer located in the carrying space with the split unit in a plane direction of the wafer.

[0021] According to an embodiment of the present invention, the alignment unit includes:

[0022] A guide member, wherein the guide member is provided with a number of alignment grooves equal to the number of the carrying grooves in a direction toward the wafer, each alignment groove having a groove bottom wall, groove side walls located on upper and lower sides of the groove bottom wall, and a groove opening opposite to the groove bottom wall, wherein the alignment groove forms a side groove opening on the left and right sides along the plane direction of the wafer, respectively, the width of the groove bottom wall in a normal direction perpendicular to the wafer plane is adapted to the thickness of the wafer fed into the carrying space, and the width of the alignment groove in a normal direction perpendicular to the wafer plane gradually increases from the groove bottom wall toward the groove opening;

[0023] A second driving member, wherein the guide member is connected to the second driving member so as to be movably along the plane direction of the wafer, and after being driven to move, the guide member can be moved into the carrying space along the plane direction of the wafer, and the side surface of the wafer located in the carrying space and confined in the carrying space can be guided to the bottom wall of the groove by the side wall of the groove.

[0024] According to one embodiment of the present invention, the guide member has a plurality of alignment channels, wherein the number of the alignment channels is the same as the number of the adjustment grooves, the alignment channels extend in the same direction as the moving direction of the split member and pass through the bottom wall of the groove, and the size of the alignment channels matches the thickness of the split member, wherein the split member is movably arranged in the alignment channels.

[0025] According to one embodiment of the present invention, the splitting assembly includes at least one holding arm, which is configured to move from the side opening of the wafer carrying unit into the carrying space in the direction of the wafer plane, and maintain the two wafers split from the single wafer at a predetermined distance in the carrying space.

[0026] According to one embodiment of the present invention, the splitter assembly includes at least one pair of belt rotation units, and the pair of belt rotation units are arranged at intervals on the periphery of the carrying space, wherein each of the belt rotation units includes:

[0027] With rotating wheel;

[0028] At least one third driving component, the belt turntable is movably arranged at the front opening of the wafer carrying unit, and the belt turntable can be synchronously connected to the third driving component to rotate around the normal direction perpendicular to the plane direction of the wafer, so that when the wafer transfer assembly is maintained in the carrying space and the splitting unit is pressed against the wafer, the belt turntables in the two pairs of belt turning units can drive the wafer located in the carrying space to rotate around the normal direction perpendicular to the plane direction of the wafer.

[0029] According to one embodiment of the present invention, each of the pulleys includes an inner body and an outer body, the middle part of the outer body is hollow to form an installation space, and the inner body is arranged in the installation space, and an elastic member is arranged between the inner wall of the outer body forming the installation space and the outer side of the inner body.

[0030] According to one embodiment of the present invention, the elastic member is configured as a plurality of tension springs; or, the elastic member is configured as an elastic rubber sleeve, wherein the shape of the inner body is implemented as a prism, wherein the cross-sectional shape of the installation space is implemented as a polygon adapted to the cross-sectional shape of the inner body.

[0031] According to one embodiment of the present invention, each of the pulleys includes an inner body and an outer body, the middle part of the outer body is hollow to form an installation space, and the inner body is arranged in the installation space, the shape of the inner body is implemented as a prism, the cross-sectional shape of the installation space is implemented as a polygon that matches the cross-sectional shape of the inner body, and the inner body can be slid up and down into the installation space, and a limit plate is respectively provided on the upper and lower sides of the inner body to limit the upward and downward movement amplitude of the outer body, and an elastic rubber sleeve is provided between the limit plate and the outer body. BRIEF DESCRIPTION OF THE DRAWINGS

[0032] Figure 1 A perspective view of a vertical furnace system capable of splitting a wafer according to the present invention is shown.

[0033] Figure 2 A perspective view from another angle is shown of the vertical furnace system capable of splitting the slices according to the present invention.

[0034] Figure 3 A front view of a vertical furnace system capable of splitting slices according to the present invention is shown.

[0035] Figure 4 A perspective view showing a partial structure of a splitting assembly of a splitting vertical furnace system according to an embodiment of the present invention from a first angle.

[0036] Figure 5 A perspective view from a second angle shows a partial structure of a splitting assembly of a splittable vertical furnace system according to an embodiment of the present invention.

[0037] Figure 6 A perspective view from a third angle shows a partial structure of a splitting assembly of a splittable vertical furnace system according to an embodiment of the present invention.

[0038] Figure 7 A top view showing a partial structure of a splitter assembly of a splittable vertical furnace system according to an embodiment of the present invention.

[0039] Figure 8 Shown Figure 7 The view shown is a cross-sectional view taken along the HH direction.

[0040] Figure 9 A three-dimensional view of a partial structure of the belt wheel in one embodiment is shown.

[0041] Figure 10 A cross-sectional view showing a partial structure of the belt pulley in another embodiment.

[0042] Figure 11 The cross-sectional views along the AA direction of the splittable vertical furnace system in the first embodiment of the present invention are shown in three different states.

[0043] Figure 12 A cross-sectional view taken along the AA direction of a splittable vertical furnace system according to a second embodiment of the present invention is shown in a state.

[0044] Figure 13 FIG1 is a cross-sectional view of the splittable vertical furnace system in the modified embodiment of the second embodiment of the present invention taken along the AA direction in a state.

[0045] Figure 14 A cross-sectional view taken along the AA direction of a vertical furnace system capable of splitting in a third embodiment of the present invention is shown in a state.

[0046] Figure 15 A cross-sectional view along the BB direction of the vertical furnace system capable of splitting according to the present invention is shown.

[0047] Figure 16 A cross-sectional view taken along the CC direction of the vertical furnace system capable of splitting the present invention is shown.

[0048] Figure 17 A top view of the vertical furnace system capable of splitting the slices described in the application is shown.

[0049] Figure 18 A cross-sectional view of the splittable vertical furnace system according to another embodiment of the present invention is shown. DETAILED DESCRIPTION

[0050] The following description is intended to disclose the present invention so that those skilled in the art can implement the present invention. The preferred embodiments described below are for illustrative purposes only, and those skilled in the art will readily appreciate other obvious variations. The basic principles of the present invention defined in the following description may be applied to other embodiments, variations, improvements, equivalents, and other technical solutions that do not depart from the spirit and scope of the present invention.

[0051] Those skilled in the art should understand that, in the disclosure of the present invention, the terms "longitudinal", "transverse", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside" and the like to indicate orientations or positional relationships are based on the orientations or positional relationships shown in the accompanying drawings, which are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation. Therefore, the above terms should not be understood as limiting the present invention.

[0052] It is to be understood that the term "one" should be understood as "at least one" or "one or more", that is, in one embodiment, the number of an element may be one, while in another embodiment, the number of the elements may be multiple, and the term "one" should not be understood as a limitation on the quantity.

[0053] refer to Figures 1-18 As shown, a vertical furnace system capable of wafer splitting according to a preferred embodiment of the present invention will be described in detail. The vertical furnace system capable of wafer splitting includes at least one vertical furnace 10, at least one wafer splitting assembly 20, and a wafer transfer assembly 30. These three components are integrated into a single device and located in the same area within the fab. In some examples, these three components can be housed within a single, enclosed enclosure. In some examples, a fan filter unit (FFU) can be installed in areas such as the top of the enclosure to enhance cleanliness within the enclosure.

[0054] The splittable vertical furnace system defines at least one heat treatment zone 101 and an inlet 102 communicating with the heat treatment zone 101 at each location of the vertical furnace 10. Furthermore, the splittable vertical furnace system defines a splitting zone 103 and an outlet 104 communicating with the splitting zone 103 at the location of the splitting assembly 20. The splitting zone 103 and the heat treatment zone 101 are generally disposed adjacent to and communicate with each other. The vertical furnace 10 is located in the heat treatment zone 101, and the splitting assembly 20 is located in the splitting zone 103.

[0055] Those skilled in the art will appreciate that the entrance 102 and / or the exit 104 may be implemented as an openable and closable structure. For example, an automatically opening door may be provided at the entrance 102 and / or the exit 104, so that the entrance 102 and / or the exit 104 can be switched between an open and a closed state.

[0056] It can be known that the heat treatment area 101 and the splitting area 103 each have a relatively independent and closable space for performing the corresponding process. For example, the heat treatment area 101 includes at least one openable and closable vertical furnace tube, and the splitting area includes a splitting box. The vertical furnace tube and the splitting box can be isolated by a physical isolation structure such as a physical isolation wall, and the connection between the two is achieved by setting a switch door on the isolation structure. The advantage of this setting is that the process interference, including thermal interference, of the two process areas can be minimized. In other examples, there may be no physical isolation structure between the vertical furnace tube and the splitting box. This setting can greatly improve the transfer efficiency of the wafer between the two process spaces. Alternatively, an air curtain formed by a top-down inert gas flow can be used between the two process spaces for isolation, which not only avoids process interference but also improves wafer transfer efficiency, and the air curtain can further improve the cleanliness of the public space.

[0057] Specifically, the vertical furnace 10 is used to heat treat wafers to prepare them for subsequent cleaving. Those skilled in the art will appreciate that the methods used by the vertical furnace 10 to heat treat wafers include, but are not limited to, oxidation, diffusion, or annealing. For example, in some examples, the vertical furnace system of the present invention can be used for a debonding process. The process involves the wafer transfer assembly 30 placing an ion-implanted wafer into the heat treatment zone of the present invention for high-temperature heating to create cracks at a predetermined depth. The heat-treated, cracked wafer is then transferred to the cleaving zone for cleaving. In other examples, the vertical furnace system of the present invention can be used for wafer thinning, a process similar to the debonding process. The wafers to be cleaved can be composite wafers such as SOI wafers, or single-crystal silicon, multicrystalline silicon, or other single-material wafers. The vertical furnace can heat treat multiple wafers simultaneously, for example, processing five or more lots of wafers. The high-temperature heating annealing process can be performed in a vacuum or in an inert gas atmosphere, depending on the process requirements. The specific heat treatment method and the specific structure of the vertical furnace are not limited in this embodiment. The split assembly can be a single-wafer processing structure or a multi-wafer processing structure. The latter is preferred in this embodiment. The combination of two multi-wafer processing units will significantly improve the equipment's output rate.

[0058] like Figure 4-Figure 8 As shown, especially the reference Figure 8In one embodiment, the wafer splitting assembly 20 includes a wafer splitting unit 21 for performing the splitting operation and a wafer carrier unit 22 for supporting and fixing the wafer during the splitting process. The wafer transfer assembly 30 is configured to transfer the wafer after heat treatment in the vertical furnace 10 to the wafer carrier unit 22. The wafer splitting unit 21 is configured to physically separate the wafer to be split after heat treatment in the vertical furnace 10 and located in the wafer carrier unit 22, thereby splitting the wafer to be split from a single wafer into two wafers.

[0059] The structure of the wafer carrying unit 22 needs to be suitable for the wafer splitting assembly 20 to perform the splitting operation under the premise of supporting and fixing the wafer. Figure 4-Figure 6 In one embodiment, the wafer carrying unit 22 has a carrying space 2201, side openings 2202 connected to the carrying space 2201 and located on both sides of the wafer carrying unit 22, a front opening 2203 connected to the carrying space 2201 and located on the front side of the wafer carrying unit 22, and a rear opening 2204 connected to the carrying space 2201 and located on the rear side of the wafer carrying unit 22.

[0060] In a more specific example, the wafer loading unit 22 is provided with a plurality of loading slots 2205 on the inner walls on both sides of the loading space 2201, facing the front opening 2203. The plurality of loading slots 2205 can be arranged at equal intervals to accommodate the subsequent wafer loading. It is worth noting that each of the loading slots 2205 also has a notch facing the side opening 2202.

[0061] The wafer transfer assembly 30 is compatible with the structure of the wafer carrier unit 22. For example, to adapt to the structure of the wafer carrier unit 22 described above, it is configured to transport the heat-treated wafers into the carrier space 2201 from the front opening 2203, and place each wafer in the carrier slot 2205. Subsequently, the wafer transfer assembly 30 exits the carrier space 2201, allowing the splitting unit 21 to subsequently split the wafers in the carrier space 2201. The split wafers are then removed from the front opening 2203.

[0062] During the splitting operation, the splitting unit 21 is aligned with the rear opening 2204 of the wafer carrying unit 22 and is configured to be movable toward or away from the rear opening 2204 so as to be able to move into or out of the carrying space 2201 .

[0063] Preferably, the split unit 21 includes a number of split components 211 no more than the number of the supporting slots 2205, wherein the several split components 211 are also arranged at intervals along the direction in which the multiple supporting slots 2205 are arranged, so that after the split unit 21 moves in the direction close to the rear opening 2204 and extends into the supporting space 2201, the split component 211 can pass through the rear opening 2204 and press against the splitting layer of the side wall of the wafer in the corresponding supporting slot 2205 from the plane direction of the wafer, so as to further penetrate into the interior of the wafer from the side wall of the wafer, thereby splitting each wafer into two wafers.

[0064] In a preferred embodiment, the splitting unit 21 further includes a first driving member 212, wherein the splitting member 211 is movably connected to the first driving member 212 so that the splitting member 211 can move toward or away from the rear opening 2204. Preferably, multiple splitting members 211 are synchronously movably connected to the same first driving member 212. In another embodiment, each splitting member 211 is configured with a first driving member 212, so that each splitting member 211 can independently move toward or away from the rear opening 2204 according to the wafer to be split, thereby meeting more diverse splitting requirements.

[0065] More preferably, the splitting assembly 20 also includes an alignment unit 23, wherein the alignment unit 23 is configured to align the splitting layer of the side wall of the wafer located in the carrying space 2201 with the splitting member 211 in the plane direction of the wafer, for example, to align the two in the longitudinal direction, thereby improving the splitting accuracy.

[0066] In a specific example, the adjustment unit 23 includes a guide member 231 and a second driving member 232, wherein the guide member 231 can be movably connected to the second driving member 232 along the plane direction of the wafer, and the guide member 231 is arranged next to the wafer carrying unit 22 so that after the guide member 231 is driven by the second driving member 232, it can move into the carrying space 2201 along the plane direction of the wafer.

[0067] More specifically, the guide member 231 is provided with the same number of alignment grooves 23101 as the number of the supporting grooves 2205 in the direction toward the wafer.

[0068] refer to Figure 6 and Figure 8Each of the alignment grooves 23101 has a groove bottom wall 231011, groove side walls 231012 located on the upper and lower sides of the groove bottom wall 231011, and a groove opening 231013 opposite to the groove bottom wall 231011, wherein the alignment groove 23101 forms a side groove 231014 on the left and right sides along the plane direction of the wafer respectively.

[0069] The width of the groove bottom wall 231011 in the normal direction perpendicular to the wafer plane is adapted to the thickness of the wafer introduced into the carrying space 2201. The width of the alignment groove 23101 in the normal direction perpendicular to the wafer plane gradually increases from the groove bottom wall 231011 toward the groove opening 231013. Thus, the groove sidewalls 231012 of the entire alignment groove 23101 form an inclined guide mechanism. That is, when the guide member 231 is driven by the second driving member 232 and extends into the carrying space 2201 along the plane direction of the wafer, even if the bottom wall 231011 of the adjustment groove 23101 is not aligned with the wafer located at the corresponding plane position, but the groove side wall 231012 of the adjustment groove 23101 first abuts against the wafer, as the guide member 231 continues to move toward the carrying space 2201, the wafer located in the carrying space 2201 will be pressed and guided by the groove side wall 231012, so that the side wall of the wafer can slide to the position abutting against the groove bottom wall 231011.

[0070] Those skilled in the art will appreciate that, in this manner, the sidewall of the wafer can be held against the groove bottom wall 231011. Thus, when the wafer is held in a predetermined position by the alignment unit 23, the splitting member 211 can be accurately pressed against the splitting layer of the wafer sidewall, thereby ensuring the alignment between the splitting member 211 and the wafer, wherein the alignment represents the offset between the splitting member 211 and the splitting layer of the wafer sidewall during splitting. A larger offset indicates a lower alignment, and a smaller offset indicates a higher alignment.

[0071] refer to Figure 8Preferably, the alignment unit 23 is also disposed beside the rear opening 2204 of the wafer carrying unit 22, and the guide member 231 has the same number of alignment channels 23102 as the alignment grooves 23101. The alignment channels 23102 extend in the same direction as the moving direction of the splitting member 211. The alignment channels 23102 pass through the bottom wall 231011 of the guide member 231, and the size of the alignment channels 23102 matches the thickness of the splitting member 211. In this way, not only can the splitting member 211 split the wafer located in the carrying space 2201 from the alignment channels 23102 via the notches 231013 of the alignment grooves 23101, but the splitting member 211 can also be positioned to prevent the splitting member 211 from shaking during splitting, thereby reducing the success rate of splitting.

[0072] In one embodiment, the splitting member 211 is implemented as a cutter or ejector. Its specific dimensions can be determined as needed, and its material can also be flexibly selected based on the material of the wafer to be split. For example, it can be made of a high-hardness material such as diamond, but this is not strictly limited in this embodiment. Preferably, the thickness of the outer edge portion of the splitting member 211 in a vertical cross-section gradually increases from the outside to the inside, thereby forming a sharp splitting edge at the edge of the splitting member 211. In addition, the thickness of the remaining portion of the splitting member 211 in a vertical cross-section is adapted to the size of the alignment channel 23102 in a vertical cross-section.

[0073] Those skilled in the art can also understand that by arranging both the adjustment unit 23 and the splitting member 211 of the splitting unit 21 on the rear side of the wafer carrying unit 22, that is, the side away from the front opening 2203, not only can the space occupied by the splitting assembly 20 be effectively reduced, but more space can also be freed up around the wafer carrying unit 22 for arranging other components.

[0074] refer to Figure 5 and Figure 6 In a further example, the splitting assembly 20 further includes at least one holding arm 24, wherein the holding arm 24 is used to keep two wafers formed after splitting the same wafer at a predetermined distance in the carrying space 2201.

[0075] Specifically, in one embodiment, the holding arm 24 is configured to be movable from the side opening 2202 of the wafer carrying unit 22 into the carrying space 2201 in the plane direction of the wafer, and the holding arm 24 can gradually extend into the split layer of the wafer as the splitting progresses of the splitting member 211 to support one of the split wafers, while the other wafer split from the same wafer is still supported by the carrying slot 2205 of the wafer carrying unit 22, so that the two wafers split from the same wafer are maintained in the carrying space 2201 at a predetermined distance, which is convenient for subsequent wafer separation and removal.

[0076] By way of example, the holding arm 24 is configured to rotate about a normal direction perpendicular to the wafer plane, so that the holding arm 24 can be moved between the two split wafers and, after all wafers in the carrying space 2201 have been removed, can be moved out of the carrying space 2201. It will be understood by those skilled in the art that, equivalently, the holding arm 24 can also be configured to move into or out of the carrying space 2201 along the wafer plane.

[0077] In a preferred embodiment, the wafer splitting assembly 20 includes at least two holding arms 24. Each holding arm 24 holds the same wafer split from the side opening 2202 of the wafer support unit 22, thereby improving wafer stability. Preferably, each holding arm 24 has a curved surface that aligns with the wafer edge, with an arc angle of, for example, 30° to 90°, and a radial distance of, for example, 3 to 5 cm along the wafer.

[0078] Those skilled in the art should understand that, in the aforementioned preferred embodiment, it is precisely because the adjustment unit 23 and the splitting member 211 of the splitting unit 21 are both arranged on the rear side of the wafer carrying unit 22, leaving more space for both sides of the wafer carrying unit 22, therefore, in this embodiment, the two holding arms 24 can be preferably arranged.

[0079] Furthermore, the splitter assembly 20 includes at least one pair of belt rotation units 25 , and the pair of belt rotation units 25 are arranged at intervals on the periphery of the carrying space 2201 .

[0080] Each belt rotation unit 25 includes at least one belt rotation wheel 251 and at least one third drive member (not shown). The belt rotation wheel is equipped with a structure for holding the wafer. The third drive member not only drives the belt rotation wheel rotation but also drives the belt rotation wheel horizontally, allowing the belt rotation wheel to abut or move away from the wafer. The combination of paired belt rotation wheels enables the vertical furnace system of the present invention to process wafers of different sizes. Preferably, the rotating pulley 251 is movably disposed at the front opening 2203 of the wafer carrying unit 22, and the rotating pulley 251 is rotatably connected to the third driving member about a normal direction perpendicular to the plane of the wafer, so that after the rotating pulley 251 moves away from the front opening 2203, the wafer transfer assembly 30 can deliver the heat-treated wafer from the front opening 2203 to the carrying slot 2205 of the carrying space 2201. When the wafer is delivered to the carrying space 2201, the wafer in the carrying space 2201 can be stopped from moving out of the front opening 2203. In some examples, each rotating pulley 251 can be provided with a plurality of slots (e.g., matching the number of the splitting members) spaced apart along its axial direction, and the surfaces of the slots contacting the wafers can be provided with a wear-resistant buffer material to reduce wafer damage.

[0081] In some examples, when the splitting member 211 presses against the wafer in the carrying space 2201 from the rear opening 2204 of the wafer carrying unit 22, the belt roller 251 can stop the wafer at the front opening 2203 opposite the rear opening 2204, causing the wafer to abut against the belt roller 251. Subsequently, as the third driving member drives the belt roller 251, the wafer in the carrying space 2201 and abutting against the belt roller 251 is driven to rotate within the carrying space 2201. Because the splitting member 211 remains stationary while the wafer is driven to rotate, the four sides of the wafer are peeled and split into two wafers.

[0082] That is, in this embodiment, the rotating wheel 251 not only prevents the wafer from being removed from the front opening 2203, but can also be driven by the third driving member to rotate the wafer in the carrying space 2201, thereby breaking the wafer. In other examples, the breaking operation can also be performed by rotating the breaking assembly while the wafer is fixed, or by rotating the breaking assembly and wafer in opposite directions, and this is not strictly limited.

[0083] Furthermore, preferably, each of the belt pulleys 251 has a self-adjusting structure with a self-adjusting compensation function, which is used to re-match the position and absorb the excessive force when the wafer position and force are unexpectedly exceeded during the splitting process. It can be flexibly adjusted according to the wafer condition, which helps to improve production yield and improve equipment adaptability. For example, in one example, the belt pulley 251 includes an inner body 2511 and an outer body 2512, the middle of the outer body 2512 is hollow to form an installation space 251201, and the inner body 2511 is arranged in the installation space 251201, and an elastic member 253 is arranged between the inner wall of the outer body 2512 forming the installation space 251201 and the outer side of the inner body 2511, so that after the outer body 2512 abuts the wafer, the size of the contact force with the wafer can be adaptively adjusted, thereby effectively preventing the wafer from being deformed due to excessive pressure from the belt pulley 251.

[0084] refer to Figure 5 and Figure 9 In one embodiment, the elastic member 253 is configured as a plurality of tension springs. More preferably, the elastic member 253 is configured as at least three tension springs, wherein one end of each tension spring is connected to the outer wall of the inner body 2511, and the other end is connected to the inner wall of the outer body 2512. It is worth mentioning that since the tension spring itself can be stretched, shortened, and twisted, the outer body 2512 can move relative to the inner body 2511 along the plane in which the elastic member 253 is arranged and along the perpendicular direction of the plane in which the wafer is arranged. In this way, the outer body 2512 can adaptively adjust its spatial position as the position of the wafer changes, and can further adaptively adjust the magnitude of the contact force with the wafer.

[0085] Preferably, the splitter assembly 20 is provided with at least one pair of the belt rotation units 25 on both sides of the front opening 2203 .

[0086] Preferably, each pair of the belt rotation units 25 is symmetrically arranged relative to the split member 211, so that the uniformity of the force applied to the wafer when it is driven to rotate can be effectively ensured.

[0087] More preferably, when the elastic member 253 is configured as a tension spring, in each pair of the belt rotation units 25, the elastic member 253 in one of the belt rotation units 25 is tilted upward from the inner body 2511 relative to the wafer plane direction, while the elastic member 253 in the other belt rotation unit 25 is tilted downward from the inner body 2511 relative to the wafer plane direction.

[0088] Since each pair of the belt rotation units 25 is symmetrically arranged relative to the splitting member 211, when the wafer is driven to rotate by each pair of the belt rotation units 25, in each pair of the belt rotation units 25, the component of the force of the outer body 2512 of one belt rotation unit 25 along the vertical direction of the wafer can be offset by the component of the force of the outer body 2512 of the other belt rotation unit 25 along the vertical direction of the wafer, thereby effectively ensuring the stability of the wafer when it is driven to rotate, thereby improving the yield of the splitting.

[0089] refer to Figure 5 and Figure 10 In another embodiment, the elastic member 253 is implemented as an elastic rubber sleeve, which is, for example, sleeved between the inner body 2511 and the outer body 2512, wherein the inner body 2511 is implemented in the shape of a prism, and the cross-sectional shape of the installation space 251201 is also implemented in the shape of a polygon that matches the cross-sectional shape of the inner body 2511. In this way, the relative rotation amplitude of the outer body 2512 with respect to the inner body 2511 when driving the wafer to rotate can be effectively reduced.

[0090] More preferably, in any of the above embodiments, a limiting plate 254 is provided on the upper and lower sides of the inner body 2511 to limit the range of the upper and lower movement of the outer body 2512.

[0091] Preferably, when the elastic member 253 is implemented as an elastic rubber sleeve, an elastic rubber sleeve is also provided between the limiting plate 254 and the outer body 2512 .

[0092] It is worth mentioning that in the previous embodiment, due to the elasticity of the tension spring, when the outer body 2512 rotates, the deformation of the tension spring must first be offset before the wafer can be driven to rotate, that is, the relative rotation amplitude of the outer body 2512 relative to the inner body 2511 is relatively large. However, when the elastic member 253 is implemented as an elastic rubber sleeve, the relative rotation amplitude of the outer body 2512 relative to the inner body 2511 when driving the wafer to rotate can be effectively reduced.

[0093] As a variation, the elastic member 253 is not provided between the inner body 2511 and the outer body 2512, wherein the shape of the inner body 2511 is implemented as a prism, and the cross-sectional shape of the installation space 251201 is also implemented as a polygon that matches the cross-sectional shape of the inner body 2511, but the inner body 2511 is inserted into the installation space 251201 so as to slide up and down. However, in this variation, a limit plate 254 is provided on the upper and lower sides of the inner body 2511 to limit the range of the up and down movement of the outer body 2512, and an elastic rubber sleeve is provided between the limit plate 254 and the outer body 2512. In this way, the outer body 2512 can completely prevent relative rotation of the inner body 2511 when driving the wafer to rotate, and can also adapt to the up and down deflection of the wafer.

[0094] Preferably, the wafer carrying unit 22 is flipably connected to the flip unit 26 so that the rear opening 2204 of the wafer carrying unit 22 faces the vertical direction. In this way, the wafer located in the wafer carrying unit 22 can be split in the vertical direction by the splitting unit 21. For example, in one example, the splitting unit 21 is initially located directly below the wafer to be split, so as to split the wafer from bottom to top. In other examples, the splitting unit 21 is initially located directly above the wafer to be split, so as to split the wafer from top to bottom. In other examples, there may be more than one splitting unit 21, so as to move toward the center of the wafer from different directions to split.

[0095] Furthermore, after the wafer in the carrying space 2201 of the wafer carrying unit 22 is split, the surfaces of the two split wafers facing each other become the split surfaces. To prevent particles and impurities on the split surfaces from falling and contaminating the wafer transfer assembly and other components and to ensure smooth transfer of the wafers (the non-split surfaces can better fit the transfer assembly), the flip unit 26 can first flip the rear opening 2204 of the wafer carrying unit 22 to its original rearward position, and the wafer transfer assembly 30 can first remove the wafer with the split surface facing upward from the carrying space 2201. Subsequently, the flip unit 26 can flip the wafer carrying unit 22 180 degrees, so that the other half of the wafer, which was split with the split surface facing downward, can be flipped to have its split surface facing upward, facilitating removal from the carrying space 2201 by the wafer transfer assembly 30.

[0096] refer to Figure 11In the first embodiment, the wafer transfer assembly 30 includes a first transfer member 31. The first transfer member 31 is configured to transfer the wafer to be heat-treated from the inlet 102 to the vertical furnace 10 located in the heat treatment zone 101, and after the wafer is heat-treated in the vertical furnace 10, transfer the heat-treated wafer from the heat treatment zone 101 to the splitting zone 103. After the wafer is split by the splitting assembly 20 in the splitting zone 103, the split wafer is transferred from the splitting zone 103 through the outlet 104.

[0097] It can be understood that in this embodiment, since the wafer can be sent in, transferred between the heat treatment area 101 and the splitting area 103, and sent out through the same first transmission member 31, the overall volume of the splitting vertical furnace system of the present invention is smaller than the solution of the prior art in which the splitting assembly and the heat treatment furnace are set separately.

[0098] refer to Figure 12 In the second embodiment, the wafer transfer assembly 30 includes a first transfer member 31 and a second transfer member 32. The first transfer member 31 is configured to transfer the wafer to be heat-treated from the inlet 102 to the vertical furnace 10 located in the heat treatment zone 101. The second transfer member 32 is configured to transfer the heat-treated wafer from the heat treatment zone 101 to the cleaving zone 103 after the wafer is heat-treated in the vertical furnace 10. After the wafer is cleaved by the cleaving assembly 20 in the cleaving zone 103, the cleaved wafer is transferred out of the cleaving zone 103 through the outlet 104.

[0099] refer to Figure 13 In a variation of the second embodiment, the first transport member 31 is configured to transport the wafers to be heat-treated from the inlet 102 to the vertical furnace 10 located in the heat treatment zone 101, and after the wafers are heat-treated in the vertical furnace 10, to transport the heat-treated wafers from the heat treatment zone 101 to the cleaving zone 103. The second transport member 32 is configured to transport the cleaved wafers out of the cleaving zone 103 through the outlet 104 after the wafers are cleaved by the cleaving assembly 20 in the cleaving zone 103.

[0100] refer to Figure 14In another embodiment, the wafer transfer assembly 30 includes a first transfer member 31, a second transfer member 32, and a third transfer member 33. The first transfer member 31 is configured to transfer the wafer to be heat-treated from the inlet 102 to the vertical furnace 10 located in the heat treatment zone 101. The second transfer member 32 is configured to transfer the heat-treated wafer from the heat treatment zone 101 to the cleaving zone 103 after the wafer is heat-treated in the vertical furnace 10. The third transfer member 33 is configured to transfer the cleaved wafer from the cleaving zone 103 through the outlet 104 after the wafer is cleaved by the cleaving assembly 20 in the cleaving zone 103.

[0101] Those skilled in the art will appreciate that, in the present invention, the first transmission member and / or the second transmission member and / or the third transmission member are configured as a wafer transfer robot, and preferably are structures that can transfer multiple wafers simultaneously.

[0102] refer to Figure 12 and Figure 15 In a preferred embodiment, the splittable vertical furnace system further includes a common transfer assembly 40, wherein the common transfer assembly 40 includes a member configured to be positioned between the entrance 102 and the exit 104 to transfer the wafer box 800 between the entrance 102 and the exit 104, thereby allowing the wafer transfer assembly 30 to retrieve the wafer from the wafer box 800 located at the entrance 102, and to accommodate the wafer taken out from the exit 104 by the wafer transfer assembly 30.

[0103] In a preferred embodiment, the common transfer assembly 40 includes a transfer rail 41 arranged along the arrangement direction of the entrance 102 and the exit 104, and a wafer box transfer robot 42 arranged on the transfer rail 41, wherein the transfer rail 41 is configured to extend from the entrance 102 to the exit 104, and the wafer box transfer robot 42 is used to carry the wafer box 800 containing the wafers that need to be heat treated and split; the wafer transfer assembly 30 is configured to transfer the wafer box 800 located at the entrance 102 to the exit 104. The wafers in the wafer box 800 are sent into the vertical furnace 10 for heat treatment; and the wafer transfer assembly 30 is configured to automatically send the wafers processed by the splitting assembly 20 to the wafer box 800 on the wafer box transfer robot 42 at the exit 104, wherein the wafer box 800 on the wafer box transfer robot 42 located at the exit 104 is the same wafer box 800 that was transferred from the entrance 102 via the wafer box transfer robot 42 along the transfer rail 41.

[0104] Those skilled in the art will appreciate that this arrangement not only automatically transfers the wafers within the entire device, thereby effectively improving wafer cleanliness, but also significantly reduces the need for additional floor space. This effectively improves user acceptance of the entire vertical furnace system capable of wafer splitting.

[0105] refer to Figures 10 to 14 Preferably, the splittable vertical furnace system includes a loading area 105 adjacent to the heat treatment area 101 and a loading robot 50 arranged between the loading area 105 and the entrance 102, wherein the loading robot 50 is configured to automatically transfer the wafer box 800 with the wafer located in the loading area to the common transfer component 40 located at the entrance 102, so that the wafer transfer component 30 can subsequently take and place the wafer from the wafer box 800.

[0106] Those skilled in the art should be aware that, in this embodiment, the automatic loading of the wafer can be achieved without occupying additional area.

[0107] refer to Figures 12 to 14 Also preferably, the vertical furnace system capable of splitting wafers includes an unloading area 106 adjacent to the outlet 104 and an unloading robot 60 disposed between the unloading area 106 and the outlet 104, wherein the unloading robot 60 is configured to automatically transfer the wafer cassette 800 on the wafer transfer assembly 30 at the outlet 104 to the unloading area 106. The loading area and the unloading area may be provided either or both. In this embodiment, the latter is preferred, as it allows the vertical furnace system of the present invention to be more compatible with other process equipment within the factory and improves the level of automated operation.

[0108] Those skilled in the art should know that, in this embodiment, the automatic unloading of the wafer can be achieved without occupying additional area.

[0109] More preferably, the unloading robot 60 and the loading robot 50 are implemented as the same robot. That is, in a preferred embodiment of the present invention, the splittable vertical furnace system can use the same robot to achieve loading and unloading of the wafer box 800.

[0110] In some examples, the number of wafers that can be split by the splitting assembly 20 at a time is consistent with the number of wafers that can be processed by the vertical furnace at a time. In other examples, the number of wafers that can be split by the splitting assembly 20 at a time is less than the number of wafers that can be processed by the vertical furnace at a time, for example, one-fifth or less of the number of wafers that can be processed by the vertical furnace at a time. In this case, Figure 18As shown, in a preferred embodiment, the splittable vertical furnace system includes at least two splitting assemblies 20 and one vertical furnace 10 to further improve the overall productivity of the system.

[0111] The present invention's wafer-breaking vertical furnace system can be used not only for debonding in advanced packaging processes, but also for wafer thinning in front-end wafer fabrication and transfer preparation of third-generation semiconductor materials. Its heat treatment and wafer-breaking functions can be used independently, meeting the diverse needs of various fabrication facilities, packaging plants, wafer foundries, research institutes, and other organizations. This allows for multiple uses, helping to reduce equipment costs and increase productivity.

[0112] Those skilled in the art will appreciate that the embodiments of the present invention described above and shown in the accompanying drawings are intended to be illustrative only and are not intended to limit the present invention. The advantages of the present invention have been fully and effectively achieved. The functional and structural principles of the present invention have been demonstrated and illustrated in the embodiments. Any variations or modifications may be made to the embodiments of the present invention without departing from the principles described.

Claims

1. A vertical furnace system capable of splitting, characterized in that: The splittable vertical furnace system defines a heat treatment zone, a splitting zone, an inlet communicating with the heat treatment zone, and an outlet communicating with the splitting zone, wherein the splitting zone and the heat treatment zone are disposed adjacent to and communicate with each other, wherein the splittable vertical furnace system comprises: at least one vertical furnace for heat treating the wafers; At least one splitting assembly, used for splitting the wafer after heat treatment in the vertical furnace; A wafer transfer assembly is configured to automatically transfer the wafer from the inlet to the vertical furnace in the heat treatment area for heat treatment, and after the wafer is heat treated in the vertical furnace, automatically transfer the wafer to the splitting area and send the split wafer out from the outlet.

2. The vertical furnace system capable of splitting according to claim 1, characterized in that: The wafer transfer assembly adopts one of the following configurations: 1) The wafer transfer assembly includes a first transfer member, which is configured to transfer the wafer requiring heat treatment from the inlet to the vertical furnace located in the heat treatment zone, and after the wafer is heat treated in the vertical furnace, transfer the heat-treated wafer from the heat treatment zone to the cleaving zone, and after the wafer is cleaved by the cleaving assembly in the cleaving zone, transfer the cleaved wafer out of the cleaving zone through the outlet; 2) The wafer transfer assembly includes a first transfer member and a second transfer member. The first transfer member is configured to transfer the wafer requiring heat treatment from the inlet to the vertical furnace located in the heat treatment zone. The second transfer member is configured to transfer the heat-treated wafer from the heat treatment zone to the cleaving zone after the wafer has been heat-treated in the vertical furnace. After the wafer has been cleaved by the cleaving assembly in the cleaving zone, the second transfer member is configured to transfer the cleaved wafer out of the cleaving zone through the outlet. 3) The wafer transfer assembly includes a first transfer member and a second transfer member. The first transfer member is configured to transfer the wafer requiring heat treatment from the inlet to the vertical furnace located in the heat treatment zone, and after the wafer is heat treated in the vertical furnace, to transfer the heat-treated wafer from the heat treatment zone to the cleaving zone. The second transfer member is configured to transfer the cleaved wafer from the cleaving zone through the outlet after the wafer is cleaved by the cleaving assembly in the cleaving zone. 4) The wafer transfer assembly includes a first transfer member, a second transfer member and a third transfer member. The first transfer member is configured to transfer the wafer that needs heat treatment from the inlet to the vertical furnace located in the heat treatment area. The second transfer member is configured to transfer the heat-treated wafer from the heat treatment area to the splitting area after the wafer is heat-treated in the vertical furnace. The third transfer member is configured to transfer the split wafer from the splitting area through the outlet after the wafer is split by the splitting assembly in the splitting area.

3. The splittable vertical furnace system according to claim 1 or 2, characterized in that: The splittable vertical furnace system includes a common transfer assembly configured to be interposed between the entrance and the exit to transfer a wafer cassette carrying wafers between the entrance and the exit.

4. The splittable vertical furnace system according to claim 3, characterized in that: The vertical furnace system capable of splitting wafers includes a loading area adjacent to the heat treatment area and a loading robot disposed between the loading area and the entrance, wherein the loading robot is configured to automatically transfer the wafer cassette with the wafers located in the loading area to the common transfer assembly located at the entrance; and / or, The splittable vertical furnace system includes an unloading area adjacent to the outlet and an unloading robot disposed between the unloading area and the outlet, wherein the unloading robot is configured to automatically transfer the wafer box on the wafer transfer assembly located at the outlet to the unloading area.

5. The vertical furnace system capable of splitting according to claim 1, characterized in that: The wafer splitting assembly includes a wafer splitting unit, a wafer carrying unit, and an alignment unit. The wafer carrying unit has a carrying space, two side openings communicating with the carrying space from both sides, and a front opening and a rear opening communicating with the carrying space from the front and back. The wafer carrying unit is provided with a plurality of carrying slots facing the front opening on the inner walls on both sides forming the carrying space, wherein the plurality of carrying slots are arranged at equal intervals. The wafer transfer assembly is configured to transfer the wafers that have been heat-treated in the vertical furnace from the front opening to the carrying slots. The split unit includes a plurality of split members, wherein the plurality of split members are also arranged at intervals along the direction in which the plurality of bearing slots are arranged; The alignment unit is configured to align a middle portion of a sidewall of the wafer located in the carrying space with the split unit in a plane direction of the wafer.

6. The vertical furnace system capable of splitting according to claim 5, characterized in that: The alignment unit comprises: A guide member, wherein the guide member is provided with a number of alignment grooves equal to the number of the carrying grooves in a direction toward the wafer, each alignment groove having a groove bottom wall, groove side walls located on upper and lower sides of the groove bottom wall, and a groove opening opposite to the groove bottom wall, the alignment groove forming a side groove opening on the left and right sides along the plane direction of the wafer, the width of the groove bottom wall in a normal direction perpendicular to the wafer plane being adapted to the thickness of the wafer fed into the carrying space, and the width of the alignment groove in a normal direction perpendicular to the wafer plane gradually increasing from the groove bottom wall toward the groove opening; A second driving member, wherein the guide member is connected to the second driving member so as to be movably along the plane direction of the wafer, and after being driven to move, the guide member can be moved into the carrying space along the plane direction of the wafer, and the side surface of the wafer located in the carrying space and confined in the carrying space can be guided to the bottom wall of the groove by the side wall of the groove.

7. The vertical furnace system capable of splitting according to claim 6, characterized in that: The guide member has a plurality of alignment channels, wherein the number of the alignment channels is the same as the number of the adjustment grooves, the alignment channels extend in the same direction as the moving direction of the split member and pass through the bottom wall of the groove, and the size of the alignment channels matches the thickness of the split member, wherein the split member is movably arranged in the alignment channels.

8. The splittable vertical furnace system according to claim 5, characterized in that: The splitting assembly includes at least one holding arm, which is configured to move from the side opening of the wafer carrying unit into the carrying space in the direction of the wafer plane and hold two wafers split from a single wafer at a predetermined distance in the carrying space.

9. The splittable vertical furnace system according to any one of claims 5 to 8, characterized in that: The splitter assembly includes at least one pair of belt rotation units, and the pair of belt rotation units are spaced apart and arranged at the periphery of the carrying space, wherein each of the belt rotation units includes: With rotating wheel; At least one third driving component, the belt turntable is movably arranged at the front opening of the wafer carrying unit, and the belt turntable can be synchronously connected to the third driving component to rotate around the normal direction perpendicular to the plane direction of the wafer, so that when the wafer transfer assembly is maintained in the carrying space and the splitting unit is pressed against the wafer, the belt turntables in the two pairs of belt turning units can drive the wafer located in the carrying space to rotate around the normal direction perpendicular to the plane direction of the wafer.

10. The splittable vertical furnace system according to claim 9, characterized in that: Each of the pulleys includes an inner body and an outer body, the middle of the outer body is hollow to form an installation space, and the inner body is arranged in the installation space, and an elastic member is arranged between the inner wall of the outer body forming the installation space and the outer side of the inner body.

11. The vertical furnace system capable of splitting according to claim 10, characterized in that: The elastic member is configured as a plurality of tension springs; or, the elastic member is configured as an elastic rubber sleeve, wherein the shape of the inner body is implemented as a prism, and the cross-sectional shape of the installation space is implemented as a polygon adapted to the cross-sectional shape of the inner body.

12. The splittable vertical furnace system according to claim 9, characterized in that: Each of the pulleys includes an inner body and an outer body. The middle part of the outer body is hollow to form an installation space, and the inner body is arranged in the installation space. The shape of the inner body is implemented as a prism, and the cross-sectional shape of the installation space is implemented as a polygon that matches the cross-sectional shape of the inner body, and the inner body can be slid up and down into the installation space. A limit plate is respectively provided on the upper and lower sides of the inner body to limit the upward and downward movement of the outer body, and an elastic rubber sleeve is provided between the limit plate and the outer body.

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