Single-particle-resistant high-electron-mobility transistor and manufacturing method thereof

Abstract

The invention discloses an anti-single-particle high-electron mobility transistor and a manufacturing method, the anti-single-particle high-electron mobility transistor comprises a substrate layer, a buffer layer, a channel layer, a barrier layer and a gate structure layer which are stacked, the surface, away from the buffer layer, of the channel layer is further provided with a source structure and a drain structure, and the surface, away from the barrier layer, of the channel layer is further provided with a gate structure. The source electrode structure and the drain electrode structure are connected to the two sides of the barrier layer in the first direction respectively and arranged at intervals with the gate structure layer on the two sides, electric field bearing structures are further arranged on the surface, away from the channel layer, of the barrier layer, and the electric field bearing structures are arranged on the side, close to the drain electrode structure, of the gate structure layer at intervals; the electric field bearing structure has a first conductive type and a second conductive type. According to the anti-single-particle high electron mobility transistor and the manufacturing method thereof, the anti-single-particle capability of the device is improved under the condition that the original characteristics of the device are not changed.

Description

Technical Field

[0001] The present application belongs to the field of semiconductor technology, and in particular relates to a single-particle resistant high electron mobility transistor and a manufacturing method thereof. Background Art

[0002] Among semiconductor power devices, GaN HEMTs (GaN High Electron Mobility Transistors) feature a wide bandgap, high 2DEG (Two Dimension Electron Gas) concentration, a high breakdown electric field, low power consumption, high reliability, and high electron mobility. However, in the radiation-rich environment of space, single particles in the radiation can introduce defects into GaN HEMT devices, causing performance degradation or even burnout. Consequently, GaN HEMTs have limited single-event immunity.

[0003] Currently, the common approach is to dope the GaN channel with Al to convert it into an AlGaN channel. However, the AlGaN channel can affect the conduction characteristics of the GaN HEMT device. Alternatively, a mismatch in lattice constants between the substrate and epitaxial layer can be used, but this mismatch is uncontrollable and can reduce device reliability. Therefore, how to improve the device's single event resistance without changing its original characteristics has become a problem that needs to be solved. Summary of the Invention

[0004] The embodiments of the present application provide a single-particle-resistant high electron mobility transistor and a manufacturing method thereof, which improve the single-particle-resistant capability of the device without changing the original characteristics of the device.

[0005] An embodiment of the present application provides a single-particle resistant high electron mobility transistor, which includes a stacked substrate layer, a buffer layer, a channel layer, a barrier layer and a gate structure layer. The surface of the channel layer away from the buffer layer is also provided with a source structure and a drain structure. The source structure and the drain structure are respectively connected to both sides of the barrier layer in a first direction and are spaced apart from the gate structure layer on both sides. An electric field bearing structure is also provided on the surface of the barrier layer away from the channel layer. The electric field bearing structure is spaced apart on the side of the gate structure layer close to the drain structure; wherein the electric field bearing structure has a first conductivity type and a second conductivity type.

[0006] As described above, the single-particle resistant high electron mobility transistor, wherein the electric field bearing structure includes a first conductive structure and a second conductive structure connected to each other, the first conductive structure is arranged close to the drain structure, and the second conductive structure is connected to a side of the first conductive structure away from the drain structure; wherein the first conductive structure has a first conductive type, the first conductive type is N-type, and the second conductive structure has a second conductive type, the second conductive type is P-type.

[0007] In the above single event resistant high electron mobility transistor, the first conductive structure is arranged in contact with the drain structure.

[0008] In the above single-particle resistant high electron mobility transistor, the first conductive structure and the second conductive structure both have an extension width L in the first direction, 0.5μm≤L≤2.0μm; wherein the first direction is the direction from the source structure to the drain structure.

[0009] As described above, the single-particle resistant high electron mobility transistor further includes a passivation layer, which is arranged in the same layer as the gate structure layer and the electric field bearing structure, and the passivation layer covers both side surfaces of the gate structure layer and the surface of the electric field bearing structure.

[0010] In the above single event resistant high electron mobility transistor, the electric field bearing structure has a first height D1 in the second direction, the gate structure layer has a second height D2 in the second direction, and 80% D2≤D1≤90% D2.

[0011] In the above single-particle resistant high electron mobility transistor, the electric field bearing structure further includes a third conductive structure connected to a side of the second conductive structure away from the first conductive structure; wherein the third conductive structure has the first conductive type.

[0012] As described above, the single-particle high electron mobility transistor comprises a gate structure and a cap layer structure stacked along the second direction, the cap layer structure is arranged on the surface of the barrier layer away from the channel layer, and the cap layer structure is made of p-type GaN material.

[0013] On the other hand, the present application also provides a method for manufacturing a single-particle resistant high electron mobility transistor, wherein the method for manufacturing the above-mentioned single-particle resistant high electron mobility transistor includes:

[0014] forming a buffer layer, a channel layer and a barrier layer in sequence on the surface of the substrate layer;

[0015] Growing and etching the surface of the barrier layer away from the channel layer multiple times to form an electric field bearing structure having a first conductivity type and a second conductivity type;

[0016] Growing and etching on one side of the electric field bearing structure in the first direction to form a cap layer structure spaced apart from the electric field bearing structure;

[0017] Etching the barrier layer on both sides in the first direction and on the side of the electric field bearing structure away from the cap layer structure to form accommodation spaces on both sides;

[0018] A source structure, a drain structure and a gate structure are respectively formed in the accommodation spaces on both sides and on the surface of the cap layer structure away from the barrier layer;

[0019] A passivation layer is formed on the surfaces of the barrier layer and the electric field bearing structure.

[0020] The method for manufacturing the single-particle resistant high electron mobility transistor as described above, wherein the step of growing and etching the surface of the barrier layer away from the channel layer multiple times to form an electric field bearing structure having a first conductivity type and a second conductivity type, comprises:

[0021] forming a first semiconductor layer having a first conductivity type on a surface of the barrier layer away from the channel layer;

[0022] Selectively etching the first semiconductor layer to shorten the length of the first semiconductor layer in the first direction to form a first conductive structure;

[0023] forming a second semiconductor layer having a second conductivity type between one side of the first conductive structure in the first direction and a surface of the barrier layer;

[0024] The second semiconductor layer is selectively etched to shorten the length of the second semiconductor layer in the first direction to form a second conductive structure.

[0025] The single-particle resistant high electron mobility transistor of the embodiment of the present application includes a stacked substrate layer, a buffer layer, a channel layer, a barrier layer and a gate structure layer. The source structure and the drain structure are respectively connected to the two sides of the barrier layer in the first direction and are spaced apart from the gate structure layer on both sides. The channel layer can provide a conductive channel along the first direction for the two-dimensional electron gas generated by the polarization effect, so that electrons can flow in the conductive channel, thereby generating current between the source structure and the drain structure. The gate structure layer can control the on and off of the conductive channel, thereby controlling the on and off state of the entire transistor device.

[0026] An electric field bearing structure is also provided on the surface of the barrier layer away from the channel layer, and the electric field bearing structure is spaced apart on the side of the gate structure layer close to the drain structure. Since the electric field bearing structure has a first conductivity type and a second conductivity type, a PN junction can be formed between the part of the electric field bearing structure with the first conductivity type and the part of the electric field bearing structure with the second conductivity type, thereby forming a depletion layer in the electric field bearing structure, so that the electric field bearing structure can bear the electric field at a part of the drain structure, thereby improving the distribution of the electric field at the drain structure, avoiding the avalanche breakdown caused by the breakdown electric field in the part of the channel layer opposite to the drain structure, reducing the ionization of electron-hole pairs, thereby reducing the accumulation of holes in the gate structure layer, and thus improving the ability to resist single particles. Therefore, the present application achieves the effect of regulating the overall electric field of the device through the setting of the electric field bearing structure, and improves the device's ability to resist single particles without changing the original characteristics of the device. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the following is a brief introduction to the drawings required for use in the embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without any creative work.

[0028] Figure 1 This is a schematic diagram of the overall structure of a single-particle resistant high electron mobility transistor according to an embodiment of the present application;

[0029] Figure 2 This is a schematic structural diagram of another single-event resistant high electron mobility transistor according to an embodiment of the present application;

[0030] Figure 3 This is a transient current diagram of a conventional high electron mobility transistor after irradiation;

[0031] Figure 4 This is a transient current diagram of the single-event resistant high electron mobility transistor after irradiation according to an embodiment of the present application;

[0032] Figure 5 and Figure 6 This is a graph showing the change of the channel of a conventional high electron mobility transistor over time after heavy ion irradiation;

[0033] Figure 7 This is a graph showing changes in the channel of the high electron mobility transistor of an embodiment of the present application over time after heavy ion irradiation;

[0034] Figures 8 to 17 Schematic diagram of each step in the method for manufacturing a single-event high electron mobility transistor according to an embodiment of the present application;

[0035] Figure 18Flowchart of a method for manufacturing a single-event high electron mobility transistor according to an embodiment of the present application.

[0036] Description of Figure Numbers:

[0037] 1. Substrate layer; 2. Buffer layer; 3. Channel layer; 4. Barrier layer; 41. Accommodation space; 5. Gate structure layer; 51. Gate structure; 52. Cap layer structure; 6. Source structure; 7. Drain structure; 8. Electric field bearing structure; 81. First conductive structure; 81a. First semiconductor layer; 82. Second conductive structure; 82a. Second semiconductor layer; 83. Third conductive structure; 9. Passivation layer; 10. Field plate structure.

[0038] X, first direction; Y, second direction. DETAILED DESCRIPTION

[0039] The features and exemplary embodiments of various aspects of the present application will be described in detail below. In order to make the purpose, technical solutions and advantages of the present application clearer, the present application will be further described in detail below in conjunction with the accompanying drawings and specific embodiments. It should be understood that the specific embodiments described herein are only intended to explain the present application, rather than to limit the present application. For those skilled in the art, the present application can be implemented without the need for some of these specific details. The following description of the embodiments is merely to provide a better understanding of the present application by illustrating the examples of the present application.

[0040] Space is a harsh radiation environment, primarily composed of single particles such as protons, electrons, and a small amount of heavy ions. Radiation can introduce defects into semiconductor devices, leading to performance degradation and even burnout. Extensive research has been conducted both domestically and internationally on the single-event effects of P-GaN HEMT devices. Most results indicate that GaN power devices have a relatively weak resistance to single-event events and are susceptible to single-event burnout (SEB).

[0041] When a single-event effect (SEE) occurs in a P-GaN HEMT device, heavy ions pass through the device's active region, generating a large number of hole-electron pairs along the ion trajectory. Because the mobility of electrons is greater than that of holes, a large number of electrons rapidly migrate toward the drain under the influence of the electric field, with some being absorbed by the drain and some accumulating below it. Due to the large electric field at the drain, the electrons undergo an avalanche effect, generating even more hole-electron pairs, further increasing the drain electric field until it reaches the breakdown field of the GaN material, resulting in a SEB.

[0042] like Figure 1 and Figure 2As shown, an embodiment of the present application provides a single-particle resistant high electron mobility transistor, which includes a stacked substrate layer 1, a buffer layer 2, a channel layer 3, a barrier layer 4 and a gate structure layer 5, and a surface of the channel layer 3 away from the buffer layer 2 is further provided with a source structure 6 and a drain structure 7, the source structure 6 and the drain structure 7 are respectively connected to both sides of the barrier layer 4 in the first direction X and are spaced apart from the gate structure layer 5 on both sides, and an electric field bearing structure 8 is further provided on the surface of the barrier layer 4 away from the channel layer 3, and the electric field bearing structure 8 is spaced apart on the side of the gate structure layer 5 close to the drain structure 7; wherein the electric field bearing structure 8 has a first conductivity type and a second conductivity type.

[0043] In specific implementation, the single-particle resistant high electron mobility transistor of the embodiment of the present application includes a stacked substrate layer 1, a buffer layer 2, a channel layer 3, a barrier layer 4 and a gate structure layer 5, the source structure 6 and the drain structure 7 are respectively connected to the two sides of the barrier layer 4 in the first direction X and are spaced apart from the gate structure layer 5 on both sides. The channel layer 3 can provide a conductive channel along the first direction X for the two-dimensional electron gas generated by the polarization effect, so that electrons can flow in the conductive channel, thereby generating current between the source structure 6 and the drain structure 7, and the gate structure layer 5 can control the on and off of the conductive channel, thereby controlling the on and off state of the entire transistor device.

[0044] An electric field bearing structure 8 is also provided on the surface of the barrier layer 4 away from the channel layer 3. The electric field bearing structure 8 is spaced apart on the side of the gate structure layer 5 close to the drain structure 7. Since the electric field bearing structure 8 has a first conductivity type and a second conductivity type, a PN junction can be formed between the part of the electric field bearing structure 8 with the first conductivity type and the part of the electric field bearing structure 8 with the second conductivity type, thereby forming a depletion layer in the electric field bearing structure 8, so that the electric field bearing structure 8 can bear a part of the electric field at the drain structure 7, thereby improving the distribution of the electric field at the drain structure 7, avoiding the avalanche breakdown phenomenon caused by the breakdown electric field reaching the part of the channel layer 3 opposite to the drain structure 7, reducing the ionization of electron-hole pairs, thereby reducing the accumulation of holes in the gate structure layer 5, and improving the ability to resist single particles.

[0045] In addition, the electric field bearing structure 8 is arranged on the surface of the barrier layer 4 away from the channel layer 3. It is not arranged in the channel layer 3 or the barrier layer 4, and will not affect the original conduction characteristics of the device; and the electric field bearing structure 8 is arranged at intervals from the gate structure layer 5 and will not be connected to the gate structure layer 5, thereby not changing the original characteristics of the device.

[0046] Therefore, the present application achieves the effect of regulating the overall electric field of the device by setting the electric field bearing structure 8, and improves the device's single particle resistance without changing the original characteristics of the device.

[0047] Please refer to Figure 3 and Figure 4 ,like Figure 3 As shown in the figure, in a conventional high electron mobility transistor device, when the drain voltage is at 220V, the gate current, source current and drain current (I G , I S with I D ) will increase sharply, and after a period of time, each current will return to its initial state. Therefore, the device will not suffer from single-event burnout at a voltage level of 220V; However, when the drain voltage is at 230V, the gate current, source current and drain current (I G , I S with I D ) will increase sharply, but after a period of time, each current does not return to its initial state. Therefore, at a voltage level of 230V, traditional high electron mobility transistor devices will experience single-particle burnout, and the device cannot return to normal working state.

[0048] like Figure 4 As shown, in the single-particle resistant high electron mobility transistor of the embodiment of the present application, when the drain voltage is at 360V, the gate current, source current and drain current (I G , I S with I D ) will increase dramatically, and after a period of time, each current will return to its initial state. Therefore, at a voltage level of 360V, the single-event-resistant high electron mobility transistor device of the present application embodiment still does not experience single-event burnout. It is not until the drain voltage reaches 365V that the currents fail to return to their initial state after a period of single-event incidence, and single-event burnout can occur. Therefore, the single-event burnout voltage of the single-event-resistant high electron mobility transistor of the present application embodiment is 365V, and the single-event-resistant capability of the device is significantly improved.

[0049] Figure 5 and Figure 6 The channel of a conventional high electron mobility transistor device changes with time after heavy ion irradiation, as shown in FIG. Figure 5 As shown in FIG, in a conventional high electron mobility transistor device, when the drain-source voltage VDS is 220 V, the maximum peak electric field at the drain structure 7 is less than 3.5 MV / cm, which is less than the breakdown field strength of the GaN material, that is, less than the breakdown field strength at the channel layer 3; and as shown in FIG. Figure 6 As shown, when the drain-source voltage VDS is 230V, the maximum peak electric field at the drain structure 7 is greater than 5MV / cm, which is greater than the breakdown field strength at the channel layer 3, so single-particle burnout occurs.

[0050] Figure 7 It shows the change of the channel of the high electron mobility transistor device of the embodiment of the present application over time after heavy ion irradiation. In the high electron mobility transistor device of the present application, when the drain-source voltage VDS is 230V, the maximum peak electric field at the drain structure 7 is reduced to 2MV / cm, thereby improving the device's ability to resist single-particle burnout.

[0051] Specifically, the buffer layer 2 and the channel layer 3 are made of GaN material, and the barrier layer 4 is made of AlGaN material. A heterojunction can be formed between the GaN material and the AlGaN material, thereby generating a polarization effect and generating a two-dimensional electron gas extending along the first direction X in the channel layer 3 to conduct the source structure 6 and the drain structure 7.

[0052] like Figure 1 As shown, the single-particle resistant high electron mobility transistor of an embodiment of the present application, wherein the electric field bearing structure 8 includes a first conductive structure 81 and a second conductive structure 82 connected to each other, the first conductive structure 81 is arranged close to the drain structure 7, and the second conductive structure 82 is connected to the side of the first conductive structure 81 away from the drain structure 7; wherein the first conductive structure 81 has a first conductive type, the first conductive type is N-type, and the second conductive structure 82 has a second conductive type, the second conductive type is P-type.

[0053] In specific implementation, the first conductive structure 81 of the electric field bearing structure 8 has N-type doping and is arranged close to the drain structure 7, and the second conductive structure 82 has P-type doping and is connected to the side of the first conductive structure 81 away from the drain structure 7, thereby forming a PN junction of the N-type semiconductor close to the drain structure 7, so that the overall depletion region of the electric field bearing structure 8 is larger, thereby bearing a larger electric field or voltage, thereby further improving the distribution of the electric field at the drain structure 7 and further enhancing the overall single-particle resistance of the device.

[0054] Specifically, the first conductive structure 81 is made of an AlGaN material with N-type doping, and the second conductive structure 82 is made of an AlGaN material with P-type doping, thereby forming a PN junction structure.

[0055] like Figure 1 As shown, in the single event resistant high electron mobility transistor of the embodiment of the present application, the first conductive structure 81 is arranged in contact with the drain structure 7 .

[0056] In specific implementation, the first conductive structure 81 is arranged in contact with the drain structure 7 to further increase the depletion region of the electric field bearing structure 8, and achieve a better electric field bearing or voltage dividing effect for the drain structure 7, thereby further improving the distribution of the electric field at the drain structure 7 and enhancing the overall single particle resistance of the device.

[0057] In some optional embodiments, the electric field bearing structure 8 includes a first conductive structure 81 and a second conductive structure 82, wherein the first conductive structure 81 is arranged around at least two side surfaces of the second conductive structure 82 to increase the contact area between the first conductive structure 81 and the second conductive structure 82, thereby further increasing the depletion region and further improving the overall single-particle resistance of the device.

[0058] like Figure 1 As shown, in the embodiment of the present application, the single-particle resistant high electron mobility transistor, wherein the first conductive structure 81 and the second conductive structure 82 both have an extension width L in the first direction X, 0.5μm≤L≤2.0μm; wherein the first direction X is the direction from the source structure 6 to the drain structure 7.

[0059] In specific implementation, the extension width L of the first conductive structure 81 and the second conductive structure 82 in the first direction X is in the range of 0.5μm to 2.0μm, and the minimum extension width L is 0.5μm, which can ensure the basic structure of the PN junction and ensure that the depletion layer has a sufficient width to achieve the electric field or voltage bearing effect; the maximum extension width L is 2.0μm, which can avoid the overall width of the PN junction being too large, which makes the distance between the depletion layer and the drain structure 7 too far, resulting in a reduction in the ability to bear the electric field or voltage division.

[0060] The single-particle resistant high electron mobility transistor of the embodiment of the present application, wherein the high electron mobility transistor further includes a passivation layer 9, which is arranged in the same layer as the gate structure layer 5 and the electric field bearing structure 8, and the passivation layer 9 covers the two side surfaces of the gate structure layer 5 and the surface of the electric field bearing structure 8.

[0061] During specific implementation, the top surface of the passivation layer 9 is flush with the top surface of the gate structure layer 5, realizing the same-layer arrangement of the passivation layer 9, the gate structure layer 5 and the electric field bearing structure 8, and the passivation layer 9 covers the two side surfaces of the gate structure layer 5 and the surface of the electric field bearing structure 8, so that the gate structure layer 5 is isolated from the source structure 6, the drain structure 7 and the electric field bearing structure 8, so that the gate structure layer 5 can normally realize its switching effect under the action of voltage, avoiding the connection with the source structure 6, the drain structure 7 or the electric field bearing structure 8, which affects the conduction characteristics of the device.

[0062] like Figure 1 As shown, in the embodiment of the present application, the single-particle resistant high electron mobility transistor, wherein the electric field bearing structure 8 has a first height D1 in the second direction Y, the gate structure layer 5 has a second height D2 in the second direction Y, and 80% D2≤D1≤90% D2.

[0063] During specific implementation, the ratio between the first height D1 of the electric field bearing structure 8 in the second direction Y and the second height D2 of the gate structure layer 5 in the second direction Y is 80% D2≤D1≤90% D2, so that the electric field bearing structure 8 is at most 90% of the gate structure layer 5, avoiding the electric field bearing structure 8 exceeding the height range of the gate structure layer 5, and avoiding the current collapse phenomenon caused by the electric field bearing structure 8 being too high; the electric field bearing structure 8 is at least 80% of the gate structure layer 5, ensuring that the depletion layer has a sufficient height to ensure the electric field or voltage bearing effect.

[0064] like Figure 2 As shown, another embodiment of the present application is a single-particle resistant high electron mobility transistor, wherein the electric field bearing structure 8 further includes a third conductive structure 83, and the third conductive structure 83 is connected to a side of the second conductive structure 82 away from the first conductive structure 81; wherein the third conductive structure 83 has a first conductivity type.

[0065] In specific implementation, the third conductive structure 83 has N-type doping, which is connected to the side of the second conductive structure 82 away from the first conductive structure 81, and can form an NPN structure together with the second conductive structure 82 and the first conductive structure 81, so that the electric field bearing structure 8 can also form a depletion layer between the third conductive structure 83 and the second conductive structure 82, thereby increasing the ability of the electric field bearing structure 8 to bear electric fields or divide voltages, and further improving the overall single-particle resistance of the device.

[0066] Specifically, the third conductive structure 83 is made of AlGaN material with N-type doping.

[0067] Specifically, the extension width L of the third conductive structure 83 ranges from 0.5 μm to 2.0 μm.

[0068] like Figure 1 and Figure 2 As shown, the single-particle high electron mobility transistor of the embodiment of the present application, wherein the gate structure layer 5 includes a gate structure 51 and a cap layer structure 52 stacked along the second direction Y, the cap layer structure 52 is arranged on the surface of the barrier layer 4 away from the channel layer 3, and the cap layer structure 52 is made of p-type GaN material.

[0069] In a specific implementation, a cap layer structure 52 is provided between the gate structure 51 of the gate structure layer 5 and the barrier layer 4, so that the high electron mobility transistor can form a normally closed device. When a voltage is applied to the gate structure 51, the source structure 6 and the drain structure 7 of the device are turned on, thereby realizing the switching effect of the device.

[0070] Specifically, the electric field bearing structure 8 and the cap layer structure 52 are arranged at the same height in the second direction Y, so that the process flow of the electric field bearing structure 8 and the cap layer structure 52 is relatively simple, thereby improving the overall manufacturing efficiency of the device.

[0071] like Figure 1 and Figure 2 As shown, in the embodiment of the present application, the high electron mobility transistor further includes a field plate structure 10, which covers the surface of the gate structure layer 5 away from the barrier layer 4, and the field plate structure 10 extends from the gate structure layer 5 toward the drain structure 7 to cover a portion of the passivation layer 9. By providing the field plate structure 10 between the gate and the drain, the electric field strength of the gate near the drain side can be effectively reduced, thereby increasing the breakdown voltage of the device, and at the same time reducing the probability of electrons in the channel layer 3 being excited by the strong electric field into the surface state, thereby suppressing the current collapse of the device.

[0072] Please refer to Figures 8 to 18 The present application also provides a method for manufacturing a single-particle high electron mobility transistor, wherein the method is used to manufacture the above-mentioned single-particle high electron mobility transistor, such as Figure 18 Shown, including:

[0073] S100, such as Figure 8 As shown, a buffer layer 2 , a channel layer 3 and a barrier layer 4 are sequentially formed on the surface of the substrate layer 1 .

[0074] The substrate layer 1 is made of Si or SiC material, and the buffer layer 2 , the channel layer 3 and the barrier layer 4 are all formed by epitaxial growth on the substrate layer 1 by using a metal-organic chemical vapor deposition (MOCVD) method.

[0075] S200, such as Figures 9 to 12 As shown, an electric field bearing structure 8 having a first conductivity type and a second conductivity type is formed by multiple growth and etching on the surface of the barrier layer 4 away from the channel layer 3 .

[0076] In this step, the electric field bearing structure 8 is also grown by MOCVD and etched by inductively coupled plasma (ICP) technology. The extension length of the grown and etched electric field bearing structure 8 in the first direction X is smaller than the extension length of the barrier layer 4 to provide growth space for the cap layer structure 52.

[0077] S300, such as Figure 13 and Figure 14 As shown, a cap layer structure 52 spaced apart from the electric field bearing structure 8 is grown and etched on one side of the electric field bearing structure 8 in the first direction X.

[0078] When growing and etching the cap layer structure 52, an overall layer structure is first formed, and then etching is performed on both sides of the layer structure in the first direction X to form the cap layer structure 52. The height of the cap layer structure 52 in the second direction Y is the same as that of the electric field bearing structure 8 to facilitate the growth and etching of the layer structure.

[0079] S400, such as Figure 15 As shown, the barrier layer 4 is etched on both sides in the first direction X and on the side of the electric field bearing structure 8 away from the cap layer structure 52 to form accommodation spaces 41 on both sides.

[0080] S500, such as Figure 16 and Figure 17 As shown, a source structure 6 , a drain structure 7 and a gate structure 51 are respectively formed in the accommodation spaces 41 on both sides and on the surface of the cap layer structure 52 away from the barrier layer 4 .

[0081] By using electron beam evaporation technology, a source structure 6 and a drain structure 7 are formed in the accommodation spaces 41 on both sides, and a gate structure 51 is formed on the surface of the cap layer structure 52 away from the barrier layer 4 .

[0082] S600, such as Figure 17 As shown, a passivation layer 9 is formed on the surfaces of the barrier layer 4 and the electric field bearing structure 8 .

[0083] A passivation layer 9 of Si 3 N 4 is grown by low pressure chemical vapor deposition (LPCVD).

[0084] In addition, after forming the passivation layer 9, a field plate structure 10 extending from the gate structure layer 5 toward the drain structure 7 is provided on the surface of the gate structure 51 away from the cap layer structure 52, and finally a structure as shown in FIG. Figure 1 The single-event high electron mobility transistor shown.

[0085] In specific implementation, the single-particle high electron mobility transistor manufactured by the manufacturing method of the single-particle high electron mobility transistor of the embodiment of the present application includes a stacked substrate layer 1, a buffer layer 2, a channel layer 3, a barrier layer 4 and a gate structure layer 5, the source structure 6 and the drain structure 7 are respectively connected to the two sides of the barrier layer 4 in the first direction X and are spaced from the gate structure layer 5 on both sides. The channel layer 3 can provide a conductive channel along the first direction X for the two-dimensional electron gas generated by the polarization effect, so that electrons can flow in the conductive channel, thereby generating current between the source structure 6 and the drain structure 7, and the gate structure layer 5 can control the on and off of the conductive channel, thereby controlling the on and off state of the entire transistor device.

[0086] An electric field bearing structure 8 is also provided on the surface of the barrier layer 4 away from the channel layer 3. The electric field bearing structure 8 is spaced apart on one side of the gate structure layer 5 close to the drain structure 7. Since the electric field bearing structure 8 has a first conductivity type and a second conductivity type, a PN junction can be formed between the part of the electric field bearing structure 8 having the first conductivity type and the part of the electric field bearing structure 8 having the second conductivity type, thereby forming a depletion layer in the electric field bearing structure 8, so that the electric field bearing structure 8 can bear a part of the electric field at the drain structure 7, thereby improving the distribution of the electric field at the drain structure 7, avoiding the avalanche breakdown caused by the breakdown electric field in the part of the channel layer 3 opposite to the drain structure 7, reducing the ionization of electron-hole pairs, thereby reducing the accumulation of holes in the gate structure layer 5, and thus improving the ability to resist single particles. Therefore, the present application achieves the effect of regulating the overall electric field of the device through the setting of the electric field bearing structure 8, and improves the device's ability to resist single particles without changing the original characteristics of the device.

[0087] The method for manufacturing the single-particle resistant high electron mobility transistor as described above, wherein the step of growing and etching the barrier layer 4 away from the surface of the channel layer 3 multiple times to form the electric field bearing structure 8 having the first conductivity type and the second conductivity type, comprises:

[0088] S210, such as Figure 9 As shown, a first semiconductor layer 81a having a first conductivity type is formed on a surface of the barrier layer 4 away from the channel layer 3;

[0089] S220, such as Figure 10 As shown, the first semiconductor layer 81a is selectively etched to shorten the length of the first semiconductor layer 81a in the first direction X, thereby forming a first conductive structure 81;

[0090] S230, such as Figure 11 As shown, a second semiconductor layer 82a having a second conductivity type is formed between the first conductive structure 81 on one side in the first direction X and the surface of the barrier layer 4;

[0091] S240, such as Figure 12 As shown, the second semiconductor layer 82 a is selectively etched to shorten the length of the second semiconductor layer 82 a in the first direction X, thereby forming a second conductive structure 82 .

[0092] In a specific implementation, by first growing a semiconductor layer structure and then etching in the first direction X, a first conductive structure 81 and a second conductive structure 82 with an extension width L in the first direction X ranging from 0.5 μm to 2.0 μm can be formed. The overall preparation process is simple, and the formed electric field bearing structure 8 can achieve an electric field regulation effect at the drain structure 7, thereby improving the device's single-particle resistance.

[0093] It should be noted that, in this document, relational terms such as first and second, etc., are used only to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any actual relationship or order between these entities or operations. Moreover, the terms "comprises," "comprising," or any other variations thereof are intended to cover non-exclusive inclusion, so that a process, method, article, or device comprising a series of elements includes not only those elements, but also other elements not explicitly listed, or elements inherent to such process, method, article, or device. In the absence of further limitations, an element defined by the phrase "comprising..." does not exclude the presence of additional identical elements in the process, method, article, or device comprising the element.

[0094] The above description is only a specific embodiment of the present application. Those skilled in the art will clearly understand that for the convenience and brevity of description, the specific working processes of the systems, modules and units described above can refer to the corresponding processes in the aforementioned method embodiments, and will not be repeated here. It should be understood that the scope of protection of the present application is not limited thereto. Any person skilled in the art can easily think of various equivalent modifications or replacements within the technical scope disclosed in the present application, and these modifications or replacements should be included in the scope of protection of the present application.

Claims

1. A single-particle high electron mobility transistor, characterized in that: The invention comprises a stacked substrate layer (1), a buffer layer (2), a channel layer (3), a barrier layer (4) and a gate structure layer (5); a surface of the channel layer (3) away from the buffer layer (2) is further provided with a source structure (6) and a drain structure (7); the source structure (6) and the drain structure (7) are respectively connected to two sides of the barrier layer (4) in a first direction (X) and are spaced apart from the gate structure layer (5) on both sides; an electric field bearing structure (8) is further provided on a surface of the barrier layer (4) away from the channel layer (3); the electric field bearing structure (8) is spaced apart on a side of the gate structure layer (5) close to the drain structure (7); Wherein, the electric field bearing structure (8) has a first conductivity type and a second conductivity type.

2. The single-event high electron mobility transistor according to claim 1, wherein: The electric field bearing structure (8) comprises a first conductive structure (81) and a second conductive structure (82) connected to each other, wherein the first conductive structure (81) is arranged close to the drain structure (7), and the second conductive structure (82) is connected to a side of the first conductive structure (81) away from the drain structure (7); The first conductive structure (81) has the first conductive type, which is N-type, and the second conductive structure (82) has the second conductive type, which is P-type.

3. The single-event high electron mobility transistor according to claim 2, wherein: The first conductive structure (81) is arranged in contact with the drain structure (7).

4. The single-event high electron mobility transistor according to claim 2, wherein: The first conductive structure (81) and the second conductive structure (82) both have an extension width L in the first direction (X), 0.5 μm≤L≤2.0 μm; The first direction (X) is the direction from the source structure (6) to the drain structure (7).

5. The single-event high electron mobility transistor according to claim 1, wherein: The high electron mobility transistor further comprises a passivation layer (9), wherein the passivation layer (9) is provided in the same layer as the gate structure layer (5) and the electric field bearing structure (8), and the passivation layer (9) covers both side surfaces of the gate structure layer (5) and the surface of the electric field bearing structure (8).

6. The single-event high electron mobility transistor according to claim 5, characterized in that: The electric field bearing structure (8) has a first height D1 in the second direction (Y), and the gate structure layer (5) has a second height D2 in the second direction (Y), and 80% D2≤D1≤90% D2.

7. The single-event high electron mobility transistor according to claim 2, wherein: The electric field bearing structure (8) further comprises a third conductive structure (83), wherein the third conductive structure (83) is connected to a side of the second conductive structure (82) away from the first conductive structure (81); Wherein, the third conductive structure (83) has a first conductive type.

8. The single-event high electron mobility transistor according to claim 1, wherein: The gate structure layer (5) comprises a gate structure (51) and a cap layer structure (52) stacked along a second direction (Y); the cap layer structure (52) is provided on a surface of the barrier layer (4) away from the channel layer (3); and the cap layer structure (52) is made of p-type GaN material.

9. A method for manufacturing a single-particle high electron mobility transistor, characterized in that: For manufacturing a single-event resistant high electron mobility transistor according to any one of claims 1 to 8, comprising: A buffer layer (2), a channel layer (3) and a barrier layer (4) are sequentially formed on the surface of the substrate layer (1); Growing and etching the surface of the barrier layer (4) away from the channel layer (3) multiple times to form an electric field bearing structure (8) having a first conductivity type and a second conductivity type; Growing and etching on one side of the electric field bearing structure (8) in a first direction (X) to form a cap layer structure (52) spaced apart from the electric field bearing structure (8); Etching the barrier layer (4) on both sides in the first direction (X) and on the side of the electric field bearing structure (8) away from the cap layer structure (52) to form accommodation spaces (41) on both sides; A source electrode structure (6), a drain electrode structure (7) and a gate electrode structure (51) are respectively formed in the accommodation spaces (41) on both sides and on the surface of the cap layer structure (52) away from the barrier layer (4); A passivation layer (9) is formed on the surfaces of the barrier layer (4) and the electric field bearing structure (8).

10. The method for manufacturing a single-event high electron mobility transistor according to claim 9, wherein: The step of growing the barrier layer (4) away from the surface of the channel layer (3) multiple times and etching to form an electric field bearing structure (8) having a first conductivity type and a second conductivity type comprises: forming a first semiconductor layer (81a) having a first conductivity type on a surface of the barrier layer (4) away from the channel layer (3); Selectively etching the first semiconductor layer (81a) to shorten the length of the first semiconductor layer (81a) in the first direction (X) to form a first conductive structure (81); forming a second semiconductor layer (82a) having a second conductivity type between one side of the first conductive structure (81) in the first direction (X) and the surface of the barrier layer (4); The second semiconductor layer (82a) is selectively etched to shorten the length of the second semiconductor layer (82a) in the first direction (X), thereby forming a second conductive structure (82).

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