Substrate processing apparatus, substrate processing method, method for manufacturing semiconductor device, gas supply system, and gas supply program

Abstract

The present invention is provided with: (a) a pair of injection devices for supplying a film-forming gas to a substrate; (b) a pair of tanks connected to each of the pair of injection devices and storing the gas; (c) a pair of on-off valves that respectively control fluid communication of the gas between the injection devices and the tanks that correspond to each other; (d) a pair of pressure gauges that measure the pressure inside each of the pair of tanks during accumulation of the gas; (e) a pair of flow restrictors for supplying the gas to each of the pair of tanks at a set flow rate that is set in advance in order to form a reference accumulation amount that is a target amount of the gas; (f) a control unit which is configured so as to be able to accumulate the gas by controlling the fluid communication through the opening / closing valve in one of the pair of tanks, measure the pressure inside the one tank during the accumulation of the gas through the pressure gauge, calculate the cumulative flow rate of the gas in the one tank or the accumulation amount of the one tank, and calculate the cumulative flow rate of the gas in the one tank or the accumulation amount of the one tank; and a correction unit that corrects the set flow rate so as to approach the reference accumulation amount on the basis of the measured pressure and the calculated cumulative flow rate or accumulation amount.

Description

Technical Field

[0001] The present disclosure relates to a substrate processing apparatus, a substrate processing method, a method for manufacturing a semiconductor device, a gas supply system, and a gas supply program. Background Art

[0002] Conventionally, semiconductor manufacturing apparatuses for manufacturing semiconductor devices are known as examples of substrate processing apparatuses. Japanese Patent Application Laid-Open No. 2011-165959 discloses a vertical semiconductor manufacturing apparatus that processes multiple substrates while holding them in a vertically stacked state. Vertical semiconductor manufacturing apparatuses can perform film formation processing, in which a predetermined film is formed on the surface of a substrate, as a substrate processing method.

[0003] International Publication No. 2018 / 181603 discloses a semiconductor device in which the gap between a semiconductor element mounted on a substrate and the substrate is sealed with a liquid epoxy resin composition. Furthermore, Japanese Patent Application Publication No. 2016-72260, Japanese Patent Application Publication No. 2020-188237, Japanese Re-Publication No. 2020-008682, and Japanese Patent Application Publication No. 2022-52622 disclose technologies for supplying a raw material gas and an inert gas to a substrate using two gas supply systems.

[0004] Patent Document 1: Japanese Patent Application Laid-Open No. 2011-165959

[0005] Patent Document 2: International Publication No. 2018 / 181603

[0006] Patent Document 3: Japanese Patent Application Laid-Open No. 2016-72260

[0007] Patent Document 4: Japanese Patent Application Laid-Open No. 2020-188237

[0008] Patent Document 5: Japanese Patent Re-Publication No. 2020-008682

[0009] Patent Document 6: Japanese Patent Application Laid-Open No. 2022-52622 Summary of the Invention

[0010] Problems to be solved by the invention

[0011] During film formation, when a raw material gas, such as a process gas, is sprayed onto a substrate within a processing chamber, uneven exposure of the raw material gas to the substrate surface can lead to reduced in-plane uniformity and poor step coverage of the film formed on the substrate. Hereinafter, the process gas will be referred to simply as "gas." Furthermore, step coverage, or the step coverage ratio, will also be referred to as "S / C."

[0012] Here, in the case of using a gas supply system that accumulates the same type of gas in tanks of the same capacity respectively connected to two or more injection devices and supplies the accumulated gas to the substrates, it is sometimes preferable to uniformly form the supply amount of each gas from the two or more gas supply systems from the viewpoint of improving the uniformity and S / C of the film on the substrate.

[0013] The present disclosure provides a technology capable of improving the uniformity of the supply amount of gas supplied to a substrate from two or more gas supply systems.

[0014] Means for solving problems

[0015] According to one embodiment of the present disclosure, there is provided a structure comprising:

[0016] (a) a pair of injection devices, each of which supplies a film-forming gas to the substrate;

[0017] (b) a pair of tanks connected to each of the pair of injection devices and storing the gas;

[0018] (c) a pair of on-off valves for controlling fluid communication of the gas between the corresponding injection devices and the tank;

[0019] (d) a pair of pressure gauges for measuring the pressure inside each of the pair of tanks during the process of accumulating the gas;

[0020] (e) a pair of flow rate limiters for supplying the gas to each of the pair of tanks at a preset set flow rate in order to form a reference accumulation amount serving as a target amount of the gas;

[0021] (f) A control unit configured to control fluid communication and accumulate the gas in one of the pair of tanks through the on-off valve, measure the pressure inside the one tank during the accumulation of the gas through the pressure gauge, calculate the cumulative flow rate of the gas to the one tank or the accumulated amount of the one tank, and correct the set flow rate to be close to the reference accumulated amount based on the measured pressure and the calculated cumulative flow rate or the accumulated amount.

[0022] Effects of the Invention

[0023] According to the present disclosure, it is possible to improve the uniformity of the supply amounts of gases supplied to a substrate from two or more gas supply systems. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] Figure 1 This is a front view illustrating a substrate processing apparatus according to an embodiment of the present disclosure, partially cut away along a vertical plane along the depth direction.

[0025] Figure 2 The substrate processing apparatus of this embodiment is cut in the horizontal direction for explanation. Figure 1 The 2-2 line section view in.

[0026] Figure 3 This is a front view illustrating a U-turn nozzle used in the substrate processing apparatus of this embodiment.

[0027] Figure 4 This is a block diagram illustrating a gas supply system of the substrate processing apparatus according to this embodiment.

[0028] Figure 5 This is a block diagram illustrating a control system of a control unit of the substrate processing apparatus according to this embodiment.

[0029] Figure 6 This is a flowchart illustrating the calibration process in substrate processing according to this embodiment.

[0030] Figure 7 This is a graph illustrating the fluctuation of the internal pressure of each of the two tanks during the gas accumulation process when the flow rate is not corrected.

[0031] Figure 8 This is a flowchart illustrating a substrate processing step according to this embodiment.

[0032] Figure 9 This is a flowchart illustrating a correction process in substrate processing according to a modified example. DETAILED DESCRIPTION

[0033] Below, refer to Figures 1 to 9 One embodiment of the present disclosure is described. In the accompanying drawings, substantially identical elements are denoted by identical reference numerals, and repeated descriptions in the specification are omitted. In addition, the drawings used in the following description are schematic, and the relationship between the dimensions of the elements shown in the drawings, the ratio of the elements, etc. may not necessarily be consistent with the actual situation. In addition, the relationship between the dimensions of the elements, the ratio of the elements, etc. may not necessarily be consistent between multiple drawings. In addition, unless otherwise specified in the specification, each element is not limited to one, and multiple elements may exist.

[0034] In this specification, a numerical range such as "3 slm to 4 slm" means that both the lower limit and the upper limit are included in the range. Therefore, for example, "3 slm to 4 slm" means "3 slm or more and 4 slm or less." This applies to other numerical ranges as well.

[0035] <Overall Structure of Substrate Processing Apparatus>

[0036] First, refer to Figures 1 to 5The overall structure of the substrate processing apparatus 10 of this embodiment will be described. The vertical direction H of the apparatus indicates the vertical direction, the width direction W of the apparatus indicates the horizontal direction, and the depth direction D of the apparatus indicates the horizontal direction.

[0037] like Figure 1 As shown, the substrate processing apparatus 10 includes a control unit 280 for controlling various components and a processing furnace 202. The processing furnace 202 includes a furnace heater 207 as a heating device. The furnace heater 207 is cylindrical and is mounted in the vertical direction H of the apparatus, supported by a heater base (not shown). The furnace heater 207 also functions as an activation mechanism that activates the processing gas using heat. The details of the control unit 280 will be described later.

[0038] A reaction tube 203, serving as a processing tube constituting a reaction vessel, is disposed upright inside the furnace heater 207. Reaction tube 203 corresponds to the processing vessel disclosed herein. Reaction tube 203 is formed of a heat-resistant material such as quartz (SiO2) or silicon carbide (SiC). Substrate processing apparatus 10 is a so-called hot-wall type.

[0039] like Figure 2 As shown, the reaction tube 203 includes a cylindrical inner tube 12 and a cylindrical outer tube 14 disposed so as to surround the inner tube 12. The outer tube 14 surrounds the inner tube 12, thereby forming a gap serving as an exhaust space S between the outer tube 14 and the cylindrical portion of the inner tube 12. The inner tube 12 and the outer tube 14 are arranged concentrically. The inner tube 12 is an example of a tube member.

[0040] The lower end of the inner tube 12 is open, and the upper end is closed by a flat wall. In addition, the outer tube 14 is provided with an opening at the lower end, and the upper end of the outer tube 14 is closed by a flat wall.

[0041] like Figure 1 As shown, a processing chamber 201 for processing wafers 200, serving as substrates, is formed within the inner tube 12. Furthermore, a wafer boat 217 can be accommodated within the processing chamber 201. The wafer boat 217 is an example of a substrate holder capable of holding wafers 200 arranged in multiple layers in a horizontal position vertically. The inner tube 12 surrounds the wafers 200 housed in the processing chamber 201. Multiple wafers 200 are arranged along the axial direction of the inner tube 12's cylindrical portion.

[0042] Moreover, if Figure 2 As shown, the inner tube 12 has a supply buffer portion 222 formed to protrude outward and serve as a nozzle chamber. The supply buffer portion 222 is a supply space where nozzles for supplying process gas are arranged. The inner tube 12 will be described in detail later.

[0043] The lower end of the reaction tube 203 is supported by a cylindrical manifold 226. A flange is formed at the upper end of the manifold 226, and the lower end of the outer tube 14 is mounted on the flange. An airtight member 220, such as an O-ring, is disposed between the flange and the lower end of the outer tube 14, thereby making the interior of the reaction tube 203 airtight.

[0044] A disc-shaped seal cap 219 is airtightly attached to the lower opening of the manifold 226 via an airtight member 220 such as an O-ring. Therefore, the lower opening of the reaction tube 203, i.e., the opening of the manifold 226, is airtightly blocked.

[0045] A boat support 218 for supporting the boat 217 is provided on the sealing cap 219. The boat support 218 is made of a heat-resistant material such as SiO2 or SiC, and functions as a heat insulating portion.

[0046] The wafer boat 217 is vertically arranged on the wafer boat support 218. The wafer boat 217 is made of a heat-resistant material such as SiO2 or SiC. Figure 2 As shown, the wafer boat 217 includes a bottom plate fixed to the wafer boat support 218 and a top plate disposed above the bottom plate. A plurality of support columns 217a are provided in a spanned state between the bottom plate and the top plate.

[0047] The wafer boat 217 holds a plurality of wafers 200 that are processed in the processing chamber 201 within the inner tube 12. Figure 2 As shown, the plurality of wafers 200 are spaced apart from each other and held in a horizontal position with their centers aligned with each other, supported by the support columns 217a of the wafer boat 217. The plurality of wafers 200 are loaded in the axial direction of the reaction tube 203.

[0048] A rotation mechanism 267 for rotating the wafer boat is provided below the sealing cap 219. A rotation shaft 265 of the rotation mechanism 267 passes through the sealing cap 219 and is connected to the wafer boat support 218. By rotating the wafer boat 217 via the wafer boat support 218 using the rotation mechanism 267, the wafers 200 can be rotated.

[0049] The seal cap 219 is vertically moved up and down by an elevator 115 serving as an elevating mechanism provided outside the reaction tube 203 , thereby enabling the wafer boat 217 to be carried in and out of the processing chamber 201 .

[0050] A plurality of nozzle support parts are provided in the manifold 226 so as to penetrate the manifold 226 and support the gas nozzle 342a, the return nozzle 340, the return nozzle 341 and the gas nozzle 342c for supplying gas to the interior of the processing chamber 201. In this embodiment, four nozzle support parts are provided in the supply buffer part 222. Figure 1, a representative example is shown of the return nozzle 341 and a nozzle support portion 350c that supports the return nozzle 341. The four nozzle support portions are made of metal, for example.

[0051] like Figure 1 As shown, one end of each of the four nozzle support members is connected to gas supply pipes 310a to 310d for supplying gas into the processing chamber 201. Furthermore, the other ends of the nozzle support members are connected to a gas nozzle 342a, a return nozzle 340, a return nozzle 341, and a gas nozzle 342c. Gas nozzles 342a and 342c are made of a heat-resistant material such as SiO2. Details of gas nozzles 342a and 342c will be described later.

[0052] (Gas supply pipe)

[0053] The supply pipe 310a is connected to the nozzle 342a via a nozzle support portion (not shown). Similarly, the supply pipe 310d is connected to the corresponding gas nozzle 342c. In addition, the supply pipe 310b is connected to the return nozzle 340.

[0054] The return nozzle 340 includes a gas nozzle 340a and a gas nozzle 340b. The supply pipe 310c is connected to the return nozzle 341 via the nozzle support portion 350c. The return nozzle 341 includes Figure 2 The second gas nozzle 341a and Figure 2 The gas nozzle 341b in the third layer from the top.

[0055] The supply pipe 310a is provided with a supply source 360a for supplying an auxiliary gas serving as a processing gas, a mass flow controller (MFC) 320a as an example of a flow controller, and a valve 330a as an opening and closing valve in order from the upstream side in the gas flow direction.

[0056] Furthermore, on supply pipe 310b, disposed in order from upstream to downstream are a vaporizer 360b, MFC 320b, valve 390b, tank 322b, and valve 330b, serving as a gas supply source for supplying raw gas serving as the process gas. MFC 320b and MFC 320c are a pair of flow rate limiters according to the present disclosure, supplying gas to each of the pair of tanks at a set flow rate to establish a reference gas storage volume serving as a target gas volume.

[0057] In this embodiment, when the gas flow rate cannot be limited to the set flow rate, the internal control valves (not shown) of MFCs 320b and 320c are fully open or fully closed. This is also referred to as a saturated state or an uncontrollable state. Furthermore, in this disclosure, when the gas flow rate cannot be limited to the set flow rate, the internal control valves do not necessarily need to be fully open or fully closed. The control valves can also be positioned between fully open and fully closed.

[0058] Although not shown in the figure, MFC320b and MFC320c each have an orifice and a control valve for controlling the gas pressure on the primary side of the orifice. Both MFC320b and MFC320c control the gas flow rate by utilizing the blocked flow of the orifice.

[0059] A vaporizer 370c is installed at the most upstream position in the gas flow direction in gas supply pipe 310c. Furthermore, downstream of the vaporizer, a vaporizer 360c, MFC 320c, valve 390c, tank 322c, and valve 330c are installed in this order from upstream to downstream. Valves 390b and 390c are a pair of on-off valves disclosed herein that control fluid communication between corresponding reflux nozzles 340 and 341 and tanks 322b and 322c, respectively.

[0060] The gas supply pipe 310 d is provided with a vaporizer 360 d as a gas supply source for supplying a reaction gas serving as a process gas, an MFC 320 d , and a valve 330 d in order from the upstream direction.

[0061] (Carburetor)

[0062] Vaporizers 360a-360d vaporize liquid gas at a target temperature and supply the vaporized gas to the corresponding MFCs 320a-320d at a pressure determined by the saturated vapor pressure at the target temperature. Vaporizers 360b and 360c form a pair of vaporizers in the present disclosure. Vaporizers 360b and 360c supply the vaporized gas to MFCs 320b and 320c, respectively.

[0063] Reaction gas is supplied from gas supply pipe 310d. Source gas is supplied from gas supply pipes 310b and 310c. Although not shown in the figure, each gas nozzle in this embodiment is also provided with a gas supply pipe for supplying nitrogen (N2) gas, etc., as a purge or assist gas, along with the MFC and valve.

[0064] Multiple exhaust slits, including a main exhaust slit 236 and auxiliary exhaust slits 238, are formed in the sidewall of the inner tube 12. These multiple exhaust slits discharge gas within the inner tube 12 into the exhaust space S. The main exhaust slit 236 in this embodiment corresponds to the exhaust portion of the present disclosure and also corresponds to the main exhaust portion. The auxiliary exhaust slits 238 in this embodiment correspond to the exhaust portion of the present disclosure and also correspond to the auxiliary exhaust portion. In this embodiment, the number of the multiple exhaust slits is three, based on one main exhaust slit 236 and two auxiliary exhaust slits 238. In the present disclosure, the number of the multiple exhaust slits is at least two.

[0065] The lower exhaust port 237 is an auxiliary opening formed in the inner tube below the main exhaust slit 236. The lower exhaust port 237 exhausts gas near the wafer boat support 218. In the present disclosure, the lower exhaust port 237 is not essential.

[0066] An exhaust port 230 serving as an exhaust port is formed in the outer tube 14 of the reaction tube 203. The exhaust port 230 is formed below the lower end of the main exhaust slit 236. The exhaust port 230 connects the exhaust space S with the outside of the reaction tube 203. Figure 2 As shown, the exhaust port 230 is arranged on the opposite side of the supply buffer 222. In a plan view, the supply buffer 222, the exhaust port 230, and a main exhaust slit 236 described later are arranged on a straight line passing through the center of the substrate.

[0067] The exhaust portion may be, for example, an exhaust port having an opening that connects the interior of the processing chamber 201 to the exhaust space S and indirectly exhausts the gas in the processing chamber 201 to the outside via the exhaust space S. Alternatively, the exhaust portion may be an opening that is directly connected to an exhaust duct described later. The exhaust duct 231 guides the exhaust gas from the reaction tube 203 to the vacuum pump 246, which serves as a vacuum exhaust device.

[0068] The exhaust duct 231 is equipped with a pressure sensor 245 for detecting the internal pressure of the processing chamber 201 and an APC (Auto Pressure Controller) valve 244, which serves as a pressure regulator. The downstream side of a vacuum pump 246 is connected to an exhaust gas treatment device (not shown). By controlling the output of the vacuum pump 246 and the opening of the APC valve 244, vacuum evacuation can be performed to achieve a predetermined pressure (i.e., vacuum level) within the processing chamber 201.

[0069] A temperature sensor (not shown) is provided as a temperature detector inside or on the outer wall of the reaction tube 203. The power supplied to the furnace heater 207 is adjusted based on the temperature information detected by the temperature sensor, thereby adjusting the temperature inside the processing chamber 201 to a desired temperature distribution.

[0070] Next, the supply buffer 222, the return nozzles 340 and 341 serving as the first injection device, and the exhaust slits including the main exhaust slit 236 and the auxiliary exhaust slit 238 in the substrate processing apparatus 10 of this embodiment will be described in detail. The first injection device is not limited to tubular components such as nozzles, as long as it can inject the raw material gas into the processing chamber 201.

[0071] (Supply buffer)

[0072] like Figure 2 As shown, the supply buffer 222 is a region within the inner tube 12 formed by protruding the cylindrical portion outward, for accommodating the nozzle while minimizing the volume of the inner tube 12. The supply buffer 222 may also be disposed in the exhaust space S outside the inner tube 12.

[0073] The supply buffer 222 includes a first partition 18a, a second partition 18b, and an arcuate side plate 20 connecting the outer end of the first partition 18a with the outer end of the second partition 18b. Both the first partition 18a and the second partition 18b extend from the outer circumferential surface 12c of the inner tube 12 toward the outer tube 14.

[0074] A third partition 18c and a fourth partition 18d are provided vertically within the supply buffer 222. The third partition 18c and the fourth partition 18d extend from the side plate 20 toward the inside of the inner tube 12 to a position where the distance from the center C1 of the wafer 200 is substantially equal to the radius of the inner tube 12.

[0075] The supply buffer portion 222 is divided into three parts, 222 a , 222 b , and 222 c , along the circumferential direction of the cylindrical portion by the third partition portion 18 c and the fourth partition portion 18 d .

[0076] like Figure 2 As shown, the portions 222a, 222b and 222c of the supply buffer 222 are independently connected to the inner tube 12 through the supply ports 235a, 235b and 235c, respectively. The supply ports 235a and 235c can be formed as horizontally long slits corresponding to the wafers 200 in a one-to-one manner, as shown in FIG. Figure 1 As shown, the supply port 235 b can be formed as a single vertically long slit that opens on all the wafers 200 .

[0077] (First injection device)

[0078] Multiple return nozzles 340 and 341, serving as gas nozzles, are disposed within portion 222b of supply buffer 222, extending along the axis of the cylindrical portion and configured to supply the same raw material gas. The disclosure does not necessarily state that the multiple nozzles are return nozzles; for example, they may be an arrangement of multiple independent straight nozzles (a nozzle array).

[0079] (Return nozzle)

[0080] In this embodiment, the four gas nozzles 340a, 340b, 341a, and 341b are formed by two return nozzles 340 and 341. Figure 2 The gas nozzles 340a and 340b adjacent to each other on the lower side in the width direction W are formed by one return nozzle 340. In addition, the gas nozzles 341a and 341b adjacent to each other on the upper side on the side opposite to the gas nozzles 340a and 340b in the width direction W are formed by another return nozzle 341.

[0081] like Figure 3 As shown, the return nozzle 340 includes an outgoing pipe 340a and a return pipe 340b. By connecting the upper end of the outgoing pipe 340a to the upper end of the return pipe 340b, the raw material gas circulates in the outgoing pipe 340a and the return pipe 340b. The return nozzle 341 is constructed symmetrically with respect to the return nozzle 340, with the imaginary plane A passing through the central axis of the reaction tube 203 as a reference. The return pipes of the return nozzles 340 and 341 are adjacent to each other, and the outgoing pipes of the return nozzles 340 and 341 are arranged separately from each other. In addition, the return pipe 340b, the outgoing pipe 340a, the outgoing pipe 341a and the return pipe 341b are arranged along the supply port 235b in a manner that the distance from the wafer 200 is approximately equal.

[0082] The return nozzles 340 and 341 are a pair of injection devices of the present disclosure that respectively supply film forming gas to the wafer 200. In addition, the return nozzles 340 and 341 are U-turn nozzles of the present disclosure. The return nozzles 340 and 341 have four or more injection holes arranged in a plane parallel to the wafer 200. Specifically, Figure 3 As shown, for each wafer 200, three injection holes 234 are formed in each of the outgoing tube 340a and the return tube 340b, for a total of six injection holes 234. The injection holes 234 are formed. The injection holes 234 vertically penetrate the outgoing tube 340a or the return tube 340b, providing a flow path connecting the inside and outside of the tube. Gas is radially injected from the outgoing tube 340a and the return tube 340b.

[0083] Furthermore, at the bottommost position of the return pipe 340 b , three expanded-diameter injection holes 334 having a larger diameter than the injection holes 234 are formed instead of the three injection holes 234 .

[0084] In this way, the return nozzles 340 and 341 provide injection ports dispersed across the lateral width of the portion 222b of the supply buffer 222. As a result, the gas exiting the supply port 235b expands to the inner diameter of the inner tube 12, flows along the surface, and is discharged through the main exhaust slit 236 and the auxiliary exhaust slit 238. At this time, if there is a mismatch or time difference in the supply from the return nozzles 340 and 341, the surface symmetry with respect to the imaginary plane A is broken, and sometimes the flow returns to the supply port 235b instead of being discharged through the exhaust slits. This delays exhaust and causes uneven gas exposure within the surface of the wafer 200, which is undesirable.

[0085] <Exhaust slit>

[0086] like Figure 2 As shown, a plurality of exhaust slits including a main exhaust slit 236 and a sub-exhaust slit 238 are formed on the side wall of the cylinder to exhaust the raw gas from the inside of the cylinder. In the present disclosure, the main exhaust slit 236 is not essential.

[0087] (Main exhaust slit)

[0088] The main exhaust slit 236 is formed in the side wall of the cylindrical portion on the opposite side of the supply buffer portion 222 relative to the center C1 of the wafer 200. The main exhaust slit 236 opens to the side of each wafer 200 and exhausts the raw material gas and the like flowing over the wafer 200. The main exhaust slit 236 can be formed as a single opening extending between the side of the uppermost wafer 200 and the side of the lowermost wafer 200, or as a plurality of holes distributed therebetween.

[0089] (Sub-exhaust slit)

[0090] The two auxiliary exhaust slits 238 are opened from both sides of the imaginary plane A set inside the cylinder. Figure 2 As shown, the imaginary plane A is set to pass through the circumferential center of the cylindrical portion at the boundary between the supply buffer portion 222 and the cylindrical portion and the axis of the cylindrical portion when viewed from above. The axis of the cylindrical portion overlaps with the center of the wafer 200.

[0091] The two auxiliary exhaust slits 238 serve as a pair of exhaust slits, sandwiching the main exhaust slit 236 within the same height range as the main exhaust slit 236. When viewed from above, first imaginary lines L1 are defined that connect the centers of the auxiliary exhaust slits 238 and the center C1 of the wafer 200. In this embodiment, the angle between the first imaginary lines L1 and the imaginary plane A, measured with the center of the supply buffer 222 set to 0 degrees, is an obtuse angle.

[0092] like Figure 2 As shown, the width of each of the two auxiliary exhaust slits 238 in the circumferential direction of the cylindrical portion is smaller than the width of the main exhaust slit 236 at the same height.

[0093] like Figure 2 As shown, the return nozzles 340 and 341 and the two auxiliary exhaust slits 238 are configured symmetrically with respect to the imaginary plane A.

[0094] (Can)

[0095] like Figure 1 As shown, the substrate processing apparatus 10 of this embodiment further includes a tank 322b and a tank 322c connected to the return nozzles 340 and 341. The tanks 322b and 322c have the same volume and can store the raw material gas separately so that the raw material gas is not mixed with the carrier gas. The tanks 322b and 322c supply the stored raw material gas to the return nozzles 340 and 341 in a pulsed manner through the opening and closing valves at approximately the same time. The tanks 322b and 322c are a pair of tanks disclosed in the present invention. Although it also depends on the vapor pressure of the raw material gas, the internal pressure of the tanks 322b and 322c is generally below atmospheric pressure. The tanks 322b and 322c can use isothermal tanks filled with metal wool or filaments.

[0096] That is, in this embodiment, high-concentration raw material gas can be rapidly supplied. During rapid supply, the raw material gas stored in tanks 322b and 322c is supplied from tanks 322b and 322c to reaction tube 203 at a high flow rate. This high-flow raw material gas supply is also called a "flash flow." During the film formation process, the raw material gas in the flash flow flows at a relatively high velocity inside the cylindrical portion of inner tube 12 and onto the surface of wafer 200.

[0097] By rapidly supplying the raw material gas, the entire surface of the wafer 200 is exposed to a high-speed flow of the raw material gas during the film formation process. High-speed gas flow is one of the most effective methods for promoting gas replacement within microstructures such as grooves and holes formed on the surface of the wafer 200, and is particularly useful in processing pattern wafers with high aspect ratios.

[0098] Furthermore, the present disclosure is not limited to the rapid supply of a raw material gas, and can also be applied to, for example, the high-flow supply of ammonia (NH 3 ) or the like as a purge gas using a general MFC.

[0099] (Second injection device)

[0100] like Figure 2 As shown, the substrate processing apparatus 10 of this embodiment further includes gas nozzles 342a and 342c as second injection devices for supplying auxiliary gas. The gas nozzles 342a and 342c are respectively provided at the portions 222a and 222c on both sides of the supply buffer portion 222. In the present disclosure, the second injection device is not required. In addition, as the second injection device, any tubular component such as a nozzle is not limited as long as it can inject the raw material gas. Figure 2As shown, partition walls are provided between the portions 222 a and 222 c on both sides of the supply buffer portion 222 in the width direction W and the cylindrical portion.

[0101] (Third injection device)

[0102] like Figure 2 As shown, the substrate processing apparatus 10 of this embodiment further includes four reverse nozzles 343d to 343g as third injection means for supplying assist gas. Regarding the four reverse nozzles 343d to 343g, one or more reverse nozzles may be provided at positions where the angle between the second imaginary line L2 connecting the injection direction of each reverse nozzle 343d to 343g and the center C1 of the wafer 200 and the imaginary plane A is an obtuse angle when viewed from above.

[0103] The four reversing nozzles 343d-343g are housed within the corresponding reversing buffers 222d-222g. Similar to the supply buffer 222, the four reversing buffers 222d-222g are areas protruding outward from the sidewalls of the inner tube 12. In this embodiment, the reversing buffers 222d-222g can be located between the main exhaust slit 236 and the two auxiliary exhaust slits 238, or between the supply buffer 222 and the two auxiliary exhaust slits 238, along the circumference of the inner tube.

[0104] In this disclosure, the reverse nozzles 343d to 343g are not essential. Alternatively, temperature sensors may be provided in the reverse buffers 222d to 222g. Furthermore, the third injection device is not limited to tubular components such as nozzles, as long as it can inject the processing gas.

[0105] (Gas supply system)

[0106] like Figure 4 As shown, the substrate processing apparatus 10 includes a first gas supply system 301b and a second gas supply system 301c. The first gas supply system 301b is primarily composed of a gas supply pipe 310b, an MFC 320b, a valve 390b, a tank 322b, and a valve 330b. The first gas supply system 301b supplies gas stored in the tank 322b from a vaporizer 360b to the wafer 200 via a return nozzle 340. Alternatively, at least one of the vaporizer 360b and the return nozzle 340 may be included in the first gas supply system 301b.

[0107] The second gas supply system 301c primarily comprises a gas supply pipe 310c, an MFC 320c, a valve 390c, a tank 322c, and a valve 330c. The tank 322c of the second gas supply system 301c has the same capacity as the tank 322b of the first gas supply system 301b. The tank 322c of the second gas supply system 301c stores the same type of gas as the tank 322b of the first gas supply system 301b. The second gas supply system 301c supplies the gas stored in the tank 322c from the vaporizer 360c to the wafer 200 via the return nozzle 341. Alternatively, at least one of the vaporizer 360c and the return nozzle 340 may be included in the second gas supply system 301c.

[0108] (tank heater and thermocouple)

[0109] like Figure 4 As shown, tanks 322b and 322c are provided with tank heaters 316b and 316c as temperature adjustment units (heating units) and thermocouples 319b and 319c as thermometers. Tank heaters 316b and 316c are a pair of tank heaters disclosed herein. Tank heaters 316b and 316c heat tanks 322b and 322c to the same temperature.

[0110] Thermocouples 319b and 319c are connected to the control unit 280. Based on the temperature information detected by the thermocouples 319b and 319c, the power supplied to the tank heaters 316b and 316c from a power supply (not shown) is adjusted. As a result, the temperatures of the tanks 322b and 322c are controlled to desired temperatures.

[0111] In this embodiment, thermocouple 319b can measure both the temperature of tank 322b and the temperature inside tank 322b. Furthermore, thermocouple 319c can measure both the temperature of tank 322c and the temperature inside tank 322c. Furthermore, in the present disclosure, a thermometer is sufficient to measure at least one of the temperature of the tank or the temperature inside the tank.

[0112] (Pressure Sensor)

[0113] Pressure sensors 400b and 400c are provided upstream of each of the tanks 322b and 322c. The pressure sensors 400b and 400c are a pair of pressure gauges according to the present disclosure, and measure the pressure inside each of the tanks 322b and 322c during gas storage.

[0114] (Pipe heater)

[0115] Pipe heaters 307b and 307c are respectively disposed in the portion of the gas supply pipe 310b between the outlets of the MFCs 320b and 320c and the processing chamber 201. The pipe heaters 307b and 307c heat the entire gas supply pipe 310b.

[0116] (Preheater)

[0117] Preheaters 318b and 318c are placed between MFCs 320b and 320c and valves 390b and 390c, respectively. Preheaters 318b and 318c have multiple heated baffles inside. Consequently, pressure loss increases for faster-flowing fluids. Therefore, during the initial gas filling phase, the internal pressure in the piping on the secondary side of MFCs 320b and 320c can be maintained high, preventing gas condensation and polymerization caused by temperature drops.

[0118] Furthermore, the present disclosure is not limited to baffles; pressure-increasing flow paths such as elbows or diffusers may also be provided. The diffuser can be placed immediately downstream of MFCs 320b and 320c. The diffuser allows the pipe diameter to be expanded and the pressure to be increased, then gradually reduced while heating the gas. The gas can expand isothermally within the diffuser.

[0119] (Control Department)

[0120] Next, refer to Figure 5 The control unit 280 will be described. Figure 5 1 is a block diagram showing the substrate processing apparatus 10. The control unit 280 (ie, controller) of the substrate processing apparatus 10 is configured as a computer. The computer includes a CPU (Central Processing Unit) 121a, a RAM (Random Access Memory) 121b, a storage device 121c, and an I / O port 121d.

[0121] The RAM 121b, the storage device 121c, and the I / O port 121d are configured to be able to exchange data with the CPU 121a via the internal bus 121e. The control unit 280 is connected to an input / output device 122 such as a touch panel.

[0122] The storage device 121c is composed of, for example, a flash memory or a hard disk drive (HDD). The storage device 121c readablely stores a control program for controlling the operation of the substrate processing apparatus and a process recipe describing the process and conditions of substrate processing described later.

[0123] The process recipe is formed by combining the control unit 280 to execute the various steps in the substrate processing process described below and to obtain a predetermined result, and functions as a program.

[0124] When the term "program" is used in this specification, it may include only the process alone, only the control program alone, or both. The RAM 121b is configured as a storage area (i.e., a work area) that temporarily stores programs, data, etc. read by the CPU 121a. In addition, a computer-readable recording medium that stores programs, data, etc. may also be provided in the present disclosure.

[0125] The I / O port 121d is connected to the above-mentioned vaporizers 360a~360d, MFC320a~320d, preheaters 318b, 318c, valves 390a~390d, valves 330a~330d, pressure sensors 400b, 400c, pressure sensor 245, APC valve 244, vacuum pump 246, furnace heater 207, piping heaters 307b, 307c, tank heaters 316b, 316c, temperature sensor, rotating mechanism 267, elevator 115, etc.

[0126] The CPU 121a is configured to read and execute a control program from the storage device 121c and to read a process recipe from the storage device 121c in response to input of an operation command from the input / output device 122. The CPU 121a is a processor of the present disclosure. The substrate processing apparatus includes at least one processor.

[0127] The CPU 121a is configured to control the flow rate adjustment of various gases by the MFCs 320a-320d, the opening and closing of the valves 330a-330d, and the opening and closing of the APC valve 244, based on the read process recipe. Furthermore, the CPU 121a is configured to control the pressure adjustment of the APC valve 244 by the pressure sensor 245, the start and stop of the vacuum pump 246, and the temperature adjustment of the furnace heater 207 by the temperature sensor. Furthermore, the CPU 121a is configured to control the rotation and rotation speed adjustment of the wafer boat 217 by the rotation mechanism 267, and the lifting and lowering of the wafer boat 217 by the elevator 115.

[0128] The control unit 280 is not limited to being configured as a dedicated computer and may also be configured as a general-purpose computer. For example, the control unit 280 of this embodiment can be configured by preparing an external storage device 123 storing the above-mentioned program and using this external storage device 123 to install the program in a general-purpose computer. Examples of external storage devices include magnetic disks such as hard disks, optical disks such as CDs, magneto-optical disks such as MOs, and semiconductor memories such as USB memories.

[0129] <Substrate Processing Method>

[0130] Next, refer to Figures 6 to 8 The substrate processing method using the substrate processing apparatus 10 of this embodiment is described. The substrate processing method of this embodiment includes performing the following steps before film formation: Figure 6 The correction process of the set flow rate shown in the example and Figure 8 In addition, in this embodiment, as a film forming process, a circulation process in which a source gas and a reaction gas are alternately supplied to the process chamber 201 is described as an example of a semiconductor device manufacturing process.

[0131] [Set flow rate correction processing]

[0132] (Set flow rate q set set up)

[0133] First, in the calibration process of setting the flow rate, as Figure 6 As shown in step S1 in FIG. 1 , the operator uses the control unit 280 to evacuate the processing chamber 201 and sets a preset flow rate q for each of the MFCs 320b and 320c. set .

[0134] In addition, in this embodiment, the set flow rate q for the MFC 320b of the first gas supply system 301b is described as an example. set The calibration process is performed, but in the present invention, the set flow rate q of the MFC 320c of the second gas supply system 301c can also be set The set flow rate q of the MFC 320c of the second gas supply system 301c is set The calibration process for performing calibration may be performed similarly by replacing the components constituting the first gas supply system 301 b and the components constituting the second gas supply system 301 c in the following description of the calibration process of the MFC 320 b .

[0135] (Open the accumulator valve)

[0136] Then, if Figure 6As shown in step S2 in FIG. 3 , the operator opens the valve 390b, which is a storage valve provided between the MFC 320b and the tank 322b in the first gas supply system 301b, using the control unit 280. By opening the valve 390b, gas is stored in the tank 322b.

[0137] (Get tank pressure)

[0138] Then, if Figure 6 As shown in step S3 of FIG. 1 , the operator uses the control unit 280 to obtain the pressure inside the tank 322b during the gas accumulation process at a predetermined sampling rate, thereby calculating the pressure gradient ΔP at each sampling time. i =P i -P i-1 i is a natural number indicating the order of obtaining samples. That is, the pressure gradient ΔP per sampling time is i is the pressure P obtained by the i-th i The pressure P obtained by the (i-1)th one before the i-th one i-1 The difference between.

[0139] Then, using the pressure gradient ΔP i The molar flow rate ΔQ per sample time of the i-th can be calculated using the following formula (1): mi .

[0140] ΔQ mi ={V T / (R·T)}·ΔP i (Formula 1)

[0141] V T : volume of the tank, R: gas constant, T: heating temperature of the tank

[0142] Furthermore, in the present disclosure, the molar flow rate ΔQ mi It can also be calculated using the following formula (2).

[0143] ΔQ mi ={(V T / R)·(P i -P i-1 )} / (T i+m -T i+m-1 )···Formula (2)

[0144] T i : Actual temperature of the tank

[0145] As the measured temperature of the tank, the value after m samples corresponding to the difference in response time between the thermocouple and the pressure sensor is used. i+m and T i+m-1 The "m" used in is a natural number.

[0146] (Close the accumulator valve)

[0147] Then, if Figure 6 As shown in step S4 of FIG. 1 , the operator uses the control unit 280 to store the gas for the set storage time T in the film forming process. acm The same time is spent in accumulating gas in tank 322b. After accumulating gas, valve 390b is closed.

[0148] (Open the release valve)

[0149] Then, if Figure 6 As shown in step S5 in , the operator uses the control unit 280 to evacuate the processing furnace 202 and opens the valve 330b serving as the release valve of the tank 322b until the pressure inside the tank 322b returns to the predetermined pre-accumulation pressure (for example, about 100 kPa to about 1 kPa).

[0150] (Set flow rate q set Correction)

[0151] Then, if Figure 6 As shown in step S6 in , the operator uses the control unit 280 to calculate the accumulated flow rate M1 using the following formula (3).

[0152] M1=∑ 0＜i≤n ΔQ mi Formula (3)

[0153] That is, the cumulative flow rate M1 is the molar flow rate ΔQ per sampling time mi The cumulative flow rate M1 is calculated by integrating the pressure gradient measured multiple times during the gas accumulation process using the gas accumulation time. The calculated cumulative flow rate M1 is compared with the preset reference accumulation amount M std Ratio R1 j =M std / Calculation of M1.

[0154] Then, as shown in the following formula (4), the first correction coefficient α and the calculated ratio R1 are j The product of the set flow rate q set in step S1 set By multiplying them, the corrected set flow rate can be obtained. N means that the number of times the process of step S6 is repeated is N times.

[0155] (set flow rate after correction) = α·(Π 1≤j≤N R1 j )·q set Formula (4)

[0156] (First correction coefficient)

[0157] In this embodiment, if Figure 7 As shown, the gas accumulation time in tanks 322b and 322c is divided into a first period in which MFCs 320b and 320c supply gas at a set flow rate, and a second period in which MFCs 320b and 320c supply gas at a flow rate less than the set flow rate. Furthermore, a first correction coefficient α is set during the gas accumulation process in tanks 322b and 322c using the following equation (5).

[0158] (First correction coefficient α) = (length of first interval + length of second interval) / length of first interval ... Formula (5)

[0159] Specifically, the first correction coefficient α in this embodiment is determined based on the ratio of the sum of the lengths of the first and second intervals relative to the length of the first interval. Therefore, in this embodiment, the first correction coefficient α is greater than 1, which results in a reduced number of correction iterations, i.e., accelerating the convergence of the set flow rate to an appropriate value. Furthermore, in the present disclosure, the first correction coefficient can be set arbitrarily.

[0160] By setting the corrected set flow rate {α·(Π 1≤j≤N R j )·q set}, correct the set flow rate of MFC320b to be close to the reference accumulation amount M std That is, the set flow rate of MFC320b is corrected. In addition, in the present disclosure, the reference accumulation amount M in the correction process of the first gas supply system 301b is std , the accumulated flow of the tank 322c of the second gas supply system 301c can be used.

[0161] Alternatively, a mass flow meter for measuring the mass flow rate of gas may be installed between the tank and MFC 320b, or between the tank and MFC 320c. For example, a mass flow meter may be installed downstream of MFC 320b or MFC 320c. In this embodiment, MFC 320b functions as the mass flow meter. Furthermore, the cumulative flow rate may be calculated by integrating the mass flow rates of gas measured by the mass flow meter.

[0162] In addition, in the present disclosure, the reference accumulation amount M can also be calculated. std The difference D from the accumulated flow rate M1 j =M std -M1. In addition, the flow rate q can also be set set Add the gas accumulation time T set in the film formation process acm and the second correction coefficient β and the calculated difference D j The product of the sum of {(22.4 / Tacm )·β·(Σ 1≤j≤N D j )+q set}, to correct the set flow rate q set in step S1 set In the present disclosure, at least one of the ratio of the integrated flow rate to the reference storage amount and the difference between the integrated flow rate and the reference storage amount may be used for correction.

[0163] (Second correction coefficient)

[0164] In this embodiment, the second correction coefficient β, like the first correction coefficient α, is set using the aforementioned equation (5) during the process of gas accumulation in tank 322b or tank 322c. Therefore, similar to the first correction coefficient α, the second correction coefficient β in this embodiment is greater than 1, thereby accelerating the convergence of the set flow rate to an appropriate value. Furthermore, in the present disclosure, the second correction coefficient can be arbitrarily set, similar to the first correction coefficient.

[0165] For example, in the present disclosure, a pressure sensor for measuring the pressure on the primary side of the flow restrictor or a thermometer for measuring the temperature on the primary side of the flow restrictor may be provided. Furthermore, the control unit 280 may be used to change at least one of the first correction coefficient and the second correction coefficient based on the pressure or temperature on the primary side of the flow restrictor at a predetermined timing before the start of the second interval.

[0166] (Implementation of the scheduled number of times)

[0167] Then, if Figure 6 As shown in step S7 in the above, the operator repeats the above steps S2 to S6 for a predetermined number of times. In the second and subsequent steps S2 to S6 (i.e., N ≥ 2), the set flow rate that has been calibrated in the previous step S6 is used as the set flow rate to be calibrated. That is, as the set flow rate that has been calibrated for the second and subsequent times, the value of the set flow rate that has been calibrated just before is used as the "set flow rate q" in the above steps S2 to S6. set Therefore, by repeating the above steps S2 to S6, the accuracy of setting the flow rate is improved.

[0168] The above series of steps S1 to S7 constitute the set flow rate calibration process of this embodiment. After the set flow rate calibration process is completed, film formation on the substrate begins using the corrected set flow rate. In other words, the set flow rate calibration process of this embodiment is a calibration process for the flow rate limiter or the second flow rate limiter performed before film formation.

[0169] [Film forming treatment]

[0170] Next, in a cyclic process as a film forming process, Si raw material gas is used as an example of a source and N-containing gas is used as a reactant, thereby forming a Si nitride film (Si 3 N 4 film, hereinafter also referred to as SiN film) on the wafer 200 .

[0171] The SiN film is formed by performing a predetermined number of cycles one or more times, and in the cycles, the SiN film is formed by performing the cycles non-simultaneously. Figure 8 The film forming process 1 in step S30, the film forming process 2 in step S40, the film forming process 3 in step S50 and the film forming process 4 in step S60.

[0172] Film forming step 1 is a step for supplying source gas to wafer 200 in inner tube 12. Film forming step 2 is an exhaust step for removing residual source gas from inner tube 12. Film forming step 3 is a step for supplying a reaction gas containing N2 gas to wafer 200 in inner tube 12. Film forming step 4 is an exhaust step for removing residual reaction gas from inner tube 12.

[0173] First, in Figure 8 In step S10, the wafer 200 is loaded into the wafer boat 217. By moving the wafer boat 217 into the inner tube 12, the substrate is accommodated inside the cylindrical portion of the inner tube 12. Figure 8 In step S20, after the wafer boat 217 is loaded into the inner tube 12, the pressure and temperature in the inner tube 12 are adjusted. Then, the four steps of film forming step 1 to film forming step 4 are sequentially performed. Each step will be described in detail below.

[0174] (Film Forming Process 1)

[0175] In the film forming step 1, Figure 8 In step S30, the first injection device injects the source gas toward the wafer 200, and the injected source gas is exhausted to the outside of the cylinder using the main exhaust slit 236 and the two auxiliary exhaust slits 238. Specifically, the source gas and carrier gas are rapidly supplied from the gas nozzles 340a, 340b, 341a, and 341b at least once, instantaneously, that is, within a short period of time.

[0176] As the raw material gas, for example, a gas containing Si and halogen can be used. Examples of the Si and halogen-containing gas include inorganic chlorosilane gases such as tetrachlorosilane (SiCl₄, abbreviated as STC) gas, hexachlorodisilane (Si₂Cl₆, abbreviated as HCDS) gas, and octachlorotrisilane (Si₃Cl₆, abbreviated as OCTS) gas. As the Si and halogen-containing gas, one or more of these can be used.

[0177] By intermittently performing the rapid supply operation, the source gas is adsorbed on the surface of the wafer 200. By the adsorption, a film containing Si is formed on the base film of the wafer 200.

[0178] The accumulation of gas in the tank during rapid supply and the release of gas from the tank are substantially performed simultaneously. Similarly, the accumulation of gas in the tank during rapid supply and the release of gas from the tank are substantially performed simultaneously.

[0179] Furthermore, during the rapid supply, the accumulation of gas into the tank and the release of gas from the tank are repeated while the time from the start of accumulation to the start of release is fixed. Similarly, during the rapid supply, the accumulation of gas into the tank and the release of gas from the tank are repeated while the time from the start of accumulation to the start of release is fixed.

[0180] (Film Forming Step 2)

[0181] In the film forming step 2, Figure 8 In step S40, the supply of the raw material gas and carrier gas is first stopped. Next, the raw material gas is evacuated by controlling an exhaust pump, such as vacuum pump 246, and APC valve 244, to reduce the pressure inside reaction tube 203 to a predetermined pressure (i.e., vacuum level). The raw material gas remaining in inner tube 12 is exhausted from inner tube 12 to the outside by vacuum exhaust. Furthermore, in film formation step 2, supplying an inert gas, such as N2 gas, as a purge gas into inner tube 12 further improves the removal of the remaining raw material gas.

[0182] (Film Forming Step 3)

[0183] In the film forming step 3, Figure 8 In step S50, a second injection device is used to supply a reaction gas into inner tube 12. Examples of the reaction gas include N-containing gas, Si-free gas, oxidizing gas, and reducing gas such as hydrogen (H2). In step S50, for example, NH3 gas is supplied as the reaction gas into inner tube 12 and exhausted through multiple exhaust slits. The supply of the N-containing gas causes the Si-containing film on the base film of wafer 200 to react with the N-containing gas. This reaction forms a SiN film on wafer 200. Alternatively, if a mixed gas of O2 and H2 is used as the reaction gas, SiO2 is formed.

[0184] (Film Forming Step 4)

[0185] In the film forming step 4, Figure 8In step S60, after film formation, the reaction gas is vacuum-exhausted by controlling an exhaust pump such as the vacuum pump 246 and the APC valve 244, etc., so that the pressure inside the reaction tube 203 reaches a predetermined pressure (vacuum level). This vacuum exhaust facilitates the discharge of N2-containing gas remaining in the inner tube 12 after film formation. Furthermore, in the film formation step 4, if an inert gas, such as N2 gas used as a carrier gas, is supplied to the inner tube 12 as a purge gas, the effect of exhausting the residual N2-containing gas from the inner tube 12 is further enhanced.

[0186] The above film forming steps 1 to 4 are regarded as one cycle. Figure 8 In step S70, the film forming steps 1 to 4 are repeated a predetermined number of times, thereby forming a SiN film having a predetermined thickness on the wafer 200. In this embodiment, the film forming steps 1 to 4 are repeated multiple times. In the present disclosure, the film forming steps 1 to 4 may be performed once each without being repeated.

[0187] After the above film forming process is completed, Figure 8 In step S80, the pressure inside the inner tube 12 is returned to normal pressure (i.e., atmospheric pressure). Specifically, for example, an inert gas such as N2 gas is supplied into the inner tube 12 and then exhausted. This purges the inner tube 12 with the inert gas, removing any remaining gas from the inner tube 12. The atmosphere inside the inner tube 12 is then replaced with the inert gas, and the pressure inside the inner tube 12 is returned to normal pressure.

[0188] Then, in Figure 8 In step S90, the substrate processing of this embodiment ends when the wafer 200 is unloaded from the inner tube 12. The above series of steps can constitute the method for manufacturing a semiconductor device of this embodiment.

[0189] (Effect)

[0190] According to this aspect, one or more of the following effects can be obtained.

[0191] The substrate processing apparatus 10 of this embodiment includes a tank 322b and a return nozzle 340, and is provided with a first gas supply system 301b for supplying the gas stored in the tank 322b to the wafer 200 via the return nozzle 340. Furthermore, the substrate processing apparatus 10 includes a tank 322c having the same capacity as the tank 322b and a return nozzle 341, and is provided with a second gas supply system 301c for supplying the same type of gas stored in the tank 322c to the wafer 200.

[0192] In order to make the supply amount of each gas from the first gas supply system 301b and the second gas supply system 301c to the chip 200 uniform, it is important to make the storage amount of gas inside the tank 322b and the tank 322c consistent and the same before supplying the gas to the chip 200.

[0193] Here, as a method for making the storage amounts of tank 322b and tank 322c consistent and the same, for example, the following method is considered: the pressure inside each tank during the gas supply process is measured in real time, and based on the measured pressure, a flow limiter is used to adjust the storage time of the gas supplied to the tank.

[0194] Regarding this, Figure 7 The example in FIG shows the pressure fluctuation state when the same type of gas is supplied to two tanks of the same capacity at the same set flow rate using flow restrictors connected upstream of each tank. Figure 7 As shown, the internal pressure of the tank fluctuates due to the inflow of gas cooled by adiabatic expansion into the tank, or due to pulsating flow in the flow restrictor. Therefore, the slope of the internal pressure increase (in other words, the pressure gradient) of the two tanks differs.

[0195] In other words, it is difficult to stably and accurately measure the internal pressure of the tank while gas is being accumulated. This results in errors in the pressure measurement, and due to the errors, there is a difference between the amount of gas accumulated in the two tanks after gas is accumulated in the tanks.

[0196] In other words, when using a flow restrictor that limits the set gas flow rate, it is difficult to match the storage volumes in the two tanks to the same reference volume when relying solely on internal tank pressure measurement. Consequently, the gas supply volumes from the nozzles corresponding to the two tanks to the substrate differ, resulting in reduced uniformity and S / C ratios in the film on the substrate.

[0197] In this embodiment, the set flow rate of MFC 320b is corrected based on the cumulative flow rate to tank 322b, calculated using the pressure gradient of tank 322b during gas accumulation. Therefore, the accumulated gas amounts in tanks 322b and 322c are controlled to form a reference accumulated amount, thereby improving the uniformity of the supply amounts of the same type of gas supplied to wafers 200 from first gas supply system 301b and second gas supply system 301c, respectively.

[0198] Furthermore, while this embodiment illustrates a case where there are two gas supply systems, the present disclosure does not limit the number to two and can be any number of three or more. Specifically, by controlling the gas storage amount in each of two or more arbitrary gas supply systems to a reference storage amount, the uniformity of the supply amount of the same type of gas to the wafer 200 can be improved.

[0199] Furthermore, in this embodiment, the accumulated flow rate of the tank is used to calibrate the set flow rate. Therefore, even if pulsating flow occurs through the flow restrictor, pressure fluctuations are averaged through accumulation. As a result, the effect of pressure fluctuations on pressure measurement can be suppressed, reducing measurement errors.

[0200] Furthermore, the effects of pressure fluctuations on pressure measurement can be suppressed, allowing the pressure during gas accumulation in tanks 322b and 322c to be increased accordingly. This results in, for example, an increase in the gas supply flow rate and pressure during rapid gas supply from return nozzles 340 and 341. This further improves the S / C ratio of the substrate.

[0201] In addition, in the present embodiment, the integrated flow rate of the tank 322 b is used for calibration of the set flow rate, and therefore zero-point calibration of the pressure sensor is also unnecessary.

[0202] Furthermore, in this embodiment, the controller 280 calculates a cumulative flow rate by integrating the pressure gradients measured multiple times during the gas accumulation process over the gas accumulation time. Correction is performed based on the ratio of the calculated cumulative flow rate to a reference accumulation amount, or the difference between the calculated cumulative flow rate and the reference accumulation amount. This improves the accuracy of the correction, further enhancing the uniformity of the supply amounts of the same type of gas supplied to the wafer 200 from the first gas supply system 301b and the second gas supply system 301c.

[0203] Furthermore, in this embodiment, the control unit 280 calculates a cumulative flow rate by integrating the gas mass flow rates measured by the MFCs 320b and 320c, which serve as mass flow meters. The control unit 280 then performs correction based on the ratio of the calculated cumulative flow rate to a reference accumulation amount, or the difference between the calculated cumulative flow rate and the reference accumulation amount. This improves the accuracy of the correction, further enhancing the uniformity of the supply amounts of the same type of gas supplied to the wafer 200 from the first gas supply system 301b and the second gas supply system 301c, respectively.

[0204] In this embodiment, MFCs 320b and 320c are mass flow controllers. When the gas flow rate cannot be limited to the set flow rate, the internal control valves of MFCs 320b and 320c are either fully open or fully closed. In other words, the gas flow rate is not restricted when the control valve is between fully open and fully closed. This prevents restriction, significantly extending the life of the mass flow controllers.

[0205] In this embodiment, the return nozzles 340 and 341 have four or more injection holes arranged in a plane parallel to the wafer 200. Therefore, the uniformity of the concentration distribution of the gas supplied to the wafer 200 is improved, making it easier to improve the uniformity and S / C of the film on the wafer 200.

[0206] In this embodiment, the accumulation of gas into tank 322b and the release of gas from tank 322b during rapid supply are repeated with the time from the start of accumulation to the start of release being constant. Similarly, the accumulation of gas into tank 322c and the release of gas from tank 322c during rapid supply are repeated with the time from the start of accumulation to the start of release being constant.

[0207] In other words, it is difficult to adjust the gas accumulation time in the tank by relying solely on the internal pressure measurement of the tank. Therefore, the present embodiment of controlling the gas accumulation amount in the tank 322b to form a reference accumulation amount by setting flow rate correction is particularly effective.

[0208] Furthermore, in this embodiment, the accumulation of gas in tank 322b and the release of gas from tank 322b are performed substantially simultaneously, and the accumulation of gas in tank 322c and the release of gas from tank 322c are performed substantially simultaneously. Therefore, the number of times gas is supplied to the substrate can be increased compared to a case where an interval is provided between gas accumulation and gas release.

[0209] In addition, in this embodiment, the control unit 280 performs correction by multiplying the set flow rate by the ratio of the calculated integrated flow rate to the reference storage amount and the preset first correction coefficient α. Therefore, the accuracy of the correction can be further improved.

[0210] In this embodiment, the controller 280 can perform correction by adding a value obtained by multiplying the difference between the calculated integrated flow rate and the reference accumulation amount by a preset second correction coefficient β to the set flow rate. This can further improve the accuracy of the correction.

[0211] In addition, in this embodiment, the first correction coefficient α and the second correction coefficient β are determined based on the ratio of the length of the first main supply interval to the length of the first reduced supply interval. Therefore, the accuracy of the correction can be further improved.

[0212] In addition, in this embodiment, the first correction coefficient α and the second correction coefficient β can be changed based on the pressure or temperature on the primary side of MFC 320 b or MFC 320 c at a preset timing before the start of the second interval.

[0213] Furthermore, in this embodiment, vaporizers 360b and 360c vaporize liquid gas at a target temperature and supply the vaporized gas to MFCs 320b and 320c, respectively, at pressures determined based on the saturated vapor pressure at the target temperature. This facilitates improvement in film uniformity and S / C ratio on wafer 200.

[0214] In addition, in this embodiment, the tank heaters 316 b and 316 c heat the tanks 322 b and 322 c to the same temperature, thereby making it easier to improve the uniformity and S / C of the film on the wafer 200 .

[0215] Furthermore, in this embodiment, MFCs 320b and 320c each have an orifice and a control valve for controlling the gas pressure on the primary side of the orifice, and the gas flow rate is controlled by utilizing the blocked flow of the orifice. This facilitates further improvement in film uniformity and S / C on wafer 200.

[0216] Similarly, in the substrate processing method using the substrate processing device 10 of this embodiment, the accumulation amount of gas in tank 322b and the accumulation amount of gas in tank 322c are controlled to form a reference accumulation amount, thereby improving the uniformity of the supply amount of the same type of gas supplied from the first gas supply system 301b and the second gas supply system 301c to the chip 200 respectively.

[0217] Furthermore, in the substrate processing method using the substrate processing apparatus 10 of this embodiment, the set flow rate is calibrated before film formation on the substrate, thereby improving the uniformity and S / C of the film on the wafer 200 during film formation.

[0218] Furthermore, in the semiconductor device manufacturing method using the substrate processing apparatus 10 of this embodiment, the uniformity of the supply amounts of the same type of gas supplied from the first gas supply system 301b and the second gas supply system 301c to the wafer 200 can be improved. As a result, the uniformity and S / C ratio of the film on the wafer 200 can be improved.

[0219] In addition, in the gas supply system included in the substrate processing device 10 of this embodiment, the accumulation amount of gas in tank 322b and the accumulation amount of gas in tank 322c are controlled to form a reference accumulation amount, thereby improving the uniformity of the supply amount of the same type of gas supplied from the first gas supply system 301b and the second gas supply system 301c to the chip 200 respectively.

[0220] In addition, in the gas supply procedure using the gas supply system of this embodiment, the accumulation amount of gas in tank 322b and the accumulation amount of gas in tank 322c are controlled to form a reference accumulation amount, thereby improving the uniformity of the supply amount of the same type of gas supplied from the first gas supply system 301b and the second gas supply system 301c to the chip 200 respectively.

[0221] <First Modification>

[0222] In the correction process of the set flow rate of the substrate processing method of the first modified example, Figure 6 The main difference from the set flow rate correction process of the embodiment described above is that the internal pressure Pe and the internal temperature Te of the tank at the release timing of the gas from the tank are estimated instead of calculating the molar flow rate.

[0223] In addition, the correction process of the set flow rate of the substrate processing method of the first variant is different from the correction process of the set flow rate of the present embodiment in that the set flow rate is corrected using the accumulated amount of the tank instead of the accumulated amount of the accumulated amount of the accumulated amount of the tank. Figure 6 The processing in each step is different, and repeated descriptions of common processing are appropriately omitted.

[0224] (For the set flow rate q set (Settings)

[0225] First, if Figure 9 As shown in step S1 in Figure 6 Similarly to step S1 in step S2, the operator uses the control unit 280 to evacuate the processing chamber 201. In addition, the operator uses the control unit 280 to set the preset flow rate q for each of the MFC 320b as the flow limiter and the MFC 320c as the second flow limiter. set .

[0226] (Open the accumulator valve)

[0227] Then, if Figure 9 As shown in step S2 in Figure 6Similarly to step S2 in

[0066] , the operator opens valve 390b, which is a storage valve provided between MFC 320b and tank 322b in first gas supply system 301b, using control unit 280. By opening valve 390b, gas is stored in tank 322b.

[0228] (Close the accumulator valve)

[0229] Then, if Figure 9 As shown in step S3A in FIG. 1 , the operator uses the control unit 280 to store the gas for the set storage time T in the film forming process. acm At the same time, gas is accumulated in tank 322b. After the gas is accumulated, valve 390b is closed. That is, Figure 9 Step S3A in Figure 6 The same as step S4 in .

[0230] (Estimated tank pressure and tank temperature)

[0231] Then, if Figure 9 As shown in step S4A in FIG. 1 , the operator uses control unit 280 to set the estimated time from the closing of valve 390b, which serves as the accumulation valve, to the opening of valve 330b, which serves as the release valve, to be longer than the time during film formation. The operator then uses control unit 280 to obtain the internal pressure and internal temperature of the tank at a predetermined sampling rate for a plurality of the set estimated times.

[0232] The measured pressure includes the pressure measured during gas accumulation and the pressure measured after gas accumulation is completed. The operator then uses the control unit 280 to estimate the pressure Pe and temperature Te at the timing of releasing gas from the tank during film formation using a weighted average or linear approximation method based on the multiple values ​​obtained.

[0233] Furthermore, if the pressure drops after accumulation, condensation of the gaseous raw material may occur within the tank. If condensation occurs at a cold spot in the piping or tank, the condensed raw material will not vaporize unless the pressure is reduced. Consequently, this will not contribute to the peak flow rate during rapid supply from return nozzles 340 and 341 to wafer 200. Therefore, in this disclosure, condensed raw material, such as reliquefaction, is considered not to accumulate in the tank.

[0234] (Open the release valve)

[0235] Then, if Figure 9 As shown in step S5 in Figure 6 Similarly, in step S5, the operator uses the control unit 280 to evacuate the processing furnace 202 and opens the valve 330b serving as the release valve of the tank 322b until the pressure inside the tank 322b returns to the predetermined pre-accumulation pressure (e.g., about 100 kPa to about 1 kPa).

[0236] (Calibration setting flow rate q set )

[0237] Then, if Figure 9 As shown in step S6A in , the operator uses the control unit 280 to calculate the storage amount M2 of the tank using the following equation (6) according to the state equation of the gas.

[0238] M2=(Pe·V T ) / (R·Te)···Formula (6)

[0239] Then, the calculated tank storage volume M2 is compared with the preset reference storage volume M std Ratio R2 j =M std Then, by adding the first correction coefficient α and the calculated ratio R2 j The product of the set flow rate q set Multiply {α·(Π 1≤j≤N R2 j )·q set}, to correct the set flow rate q set in step S1 set The corrected set flow rate {α·(Π 1≤j≤N R2 j )·q set}.

[0240] (Implementation of the scheduled number of times)

[0241] Then, if Figure 9 As shown in step S7 in Figure 6 Similarly, the operator repeats steps S2 through S6A a predetermined number of times. The above series of steps S1 through S7 constitutes the set flow rate correction process of the first variant. The remaining configuration of the set flow rate correction process of the first variant is the same as that of the present embodiment.

[0242] (Operation and Effect of First Modification)

[0243] In the first modified example, the amount of gas stored in tank 322b is estimated based on multiple pressures of tank 322b, including the pressure measured by pressure sensors 400b and 400c during gas storage and the pressure measured after gas storage is complete, as well as multiple temperatures measured by thermocouples 319b and 319c. Furthermore, correction is performed based on the ratio of the estimated gas storage amount to a reference gas storage amount, or the difference between the estimated gas storage amount and the reference gas storage amount.

[0244] Therefore, as in the case of the present embodiment, the gas storage amount in the tank 322b is controlled to form a reference storage amount, thereby improving the uniformity of the supply amounts of the same type of gas supplied from the first gas supply system 301b and the second gas supply system 301c to the wafer 200. As a result, the uniformity and S / C of the film on the wafer 200 can be improved. That is, in the first modification, the same effects as those of the present embodiment can be obtained.

[0245] Furthermore, in the first modification, the accumulated flow rate is no longer required, and the set flow rate is corrected using the tank storage volume, thereby improving the uniformity and S / C of the film on the wafer 200. The other effects of the first modification are the same as those of the present embodiment, and therefore repeated descriptions are omitted.

[0246] <Second Modification>

[0247] In addition, as another method of correcting the set flow rate, correction can also be performed using a correction value that reflects the control error of MFC320b and MFC320c and a correction value that reflects the mechanical difference in the flow guidance when each control valve of MFC320b and MFC320c is fully opened.

[0248] Specifically, in the second modified example, control unit 280 sets a first correction value based on the accumulated flow rate calculated by MFC 320b during the first interval of tank 322b, for example. In the present disclosure, the first correction value may also be set based on the accumulated flow rate calculated by MFC 320c during the first interval of tank 322c. The first correction value reflects the control error between MFC 320b and MFC 320c.

[0249] In the second modified example, control unit 280 sets the second correction value based on the pressure gradient in the second section of tank 322b or the flow rate per unit time obtained by integrating the flow rates. Furthermore, in the present disclosure, the second correction value may also be set based on the pressure gradient in the second section of tank 322c or the flow rate per unit time obtained by integrating the flow rates. The second correction value reflects the mechanical difference in flow guidance between MFCs 320b and 320c when the control valves included in MFCs 320b and 320c are fully open.

[0250] Furthermore, for example, the synthesis of the first correction value and the second correction value, that is, the sum of the first correction value and the second correction value, can be combined with the Figure 6 The set flow rate set in step S1 is added to the set flow rate, thereby correcting the set flow rate.

[0251] (Operation and Effect of Second Modification)

[0252] In the second modification, as in the present embodiment, the gas storage amount in tank 322b is controlled to form a reference storage amount, thereby improving the uniformity of the supply amounts of the same type of gas supplied from first gas supply system 301b and second gas supply system 301c to wafer 200. As a result, the uniformity and S / C of the film on wafer 200 can be improved. In other words, the second modification also achieves the same effects as those of the present embodiment described above.

[0253] Furthermore, in the second modified example, correction can also be performed using a correction value reflecting the control error between MFC 320b and MFC 320c, and a correction value reflecting the mechanical difference in flow guidance when each control valve of MFC 320b and MFC 320c is fully open. The remaining effects of the second modified example are the same as those of the present embodiment, and therefore, repeated descriptions are omitted.

[0254] (Other Modifications)

[0255] Furthermore, in the present disclosure, the timing for reflecting the correction in the set flow rate is not limited to reflecting the correction every time a correction value is obtained through a single measurement. For example, the correction value may be obtained through multiple measurements, and the multiple correction values ​​obtained may be averaged and reflected in the set flow rate. This variation also achieves the same effects as the above-described embodiment. Furthermore, this variation also averages the multiple correction values ​​obtained and reflects them in the set flow rate, thereby improving the accuracy of the correction.

[0256] Furthermore, in the present disclosure, the vaporizer temperature can be calibrated instead of the set flow rate. This variation also achieves the same effects as the aforementioned embodiment. Furthermore, this variation eliminates the need to calibrate the set flow rate, and by calibrating the vaporizer temperature, the uniformity and S / C ratio of the film on the wafer 200 can be improved.

[0257] <Other aspects of the present disclosure>

[0258] The present disclosure has been described by way of the above-disclosed embodiments, but the description and drawings constituting part of this disclosure should not be construed as limiting the present disclosure. The present disclosure is not limited to the above-disclosed embodiments, and various modifications are possible without departing from the spirit of the present disclosure.

[0259] For example, the above-described method describes an example of film formation using a vertical batch-type substrate processing apparatus that processes multiple substrates at a time. However, the present disclosure is not limited to the above-described method. The present disclosure can also be appropriately applied to film formation using, for example, a single-substrate processing apparatus that processes one substrate at a time or a multi-substrate processing apparatus that processes multiple substrates.

[0260] Furthermore, the above-described embodiment describes an example of forming a film using a substrate processing apparatus having a hot-wall processing furnace. However, the present disclosure is not limited to the above-described embodiment and can also be appropriately applied to forming a film using a substrate processing apparatus having a cold-wall processing furnace.

[0261] When these substrate processing apparatuses are used, each process can be performed using the same process procedures and process conditions as those of the above-described embodiments and modifications, and the same effects as those of the above-described embodiments and modifications can be obtained.

[0262] In addition, the present disclosure may be formed by partially combining the structures included in the multiple embodiments, modifications, and methods disclosed above. In the present disclosure formed by the combination, the processing procedures and processing conditions performed may be configured similarly to the processing procedures and processing conditions described in the methods of the present embodiment.

[0263] The present disclosure includes various embodiments and the like that are not described above, and the technical scope of the present disclosure is determined only by the invention-specific matters that have an appropriate protection scope based on the above description.

[0264] Description of Reference Signs

[0265] 10Substrate processing equipment

[0266] 200 wafers (substrates)

[0267] 280 Control Department

[0268] 320b Mass Flow Controller (MFC) (Flow Limiter)

[0269] 320c Mass Flow Controller (MFC) (Flow Limiter)

[0270] 322b can

[0271] 322c can

[0272] 340 reflux nozzle (injection device)

[0273] 341 reflux nozzle (injection device)

[0274] 390b valve (on-off valve)

[0275] 390c valve (on-off valve)

[0276] 400b pressure sensor (pressure gauge)

[0277] 400c pressure sensor (manometer).

Claims

1. A substrate processing device, characterized in that: have: (a) a pair of injection devices, each of which supplies a film-forming gas to the substrate; (b) a pair of tanks connected to each of the pair of injection devices and storing the gas; (c) a pair of on-off valves for controlling fluid communication of the gas between the corresponding injection devices and the tank; (d) a pair of pressure gauges for measuring the pressure inside each of the pair of tanks during the process of accumulating the gas; (e) a pair of flow rate limiters for supplying the gas to each of the pair of tanks at a set flow rate that is predetermined to form a reference accumulation amount serving as a target amount of the gas; (f) A control unit configured to control fluid communication and accumulate the gas in one of the pair of tanks through the on-off valve, measure the pressure inside the one tank during the accumulation of the gas through the pressure gauge, calculate the cumulative flow rate of the gas to the one tank or the accumulated amount of the one tank, and correct the set flow rate to be close to the reference accumulated amount based on the measured pressure and the calculated cumulative flow rate or the accumulated amount.

2. The substrate processing apparatus according to claim 1, wherein: The control unit calculates the cumulative flow rate by integrating the pressure gradients measured a plurality of times during the gas accumulation process with the gas accumulation time. The control unit performs the correction based on a ratio of the calculated integrated flow rate to the reference storage amount or a difference between the calculated integrated flow rate and the reference storage amount.

3. The substrate processing apparatus according to claim 1, wherein: A mass flow meter for measuring the mass flow of the gas is provided between the one tank and the one flow restrictor. The control unit calculates the cumulative flow rate by integrating the mass flow rate of the gas measured by the mass flow meter. The control unit performs the correction based on a ratio of the calculated integrated flow rate to the reference storage amount or a difference between the calculated integrated flow rate and the reference storage amount.

4. The substrate processing apparatus according to claim 1, wherein: The substrate processing apparatus further includes a thermometer for measuring the temperature of the one tank or the temperature inside the one tank. The control unit estimates the amount of gas stored in the one tank based on a plurality of pressures of the one tank, including the pressure measured by the pressure gauge during the gas storage process and the pressure measured after the gas storage is completed, and a plurality of temperatures measured by the thermometer. The control unit performs the correction based on a ratio of the estimated accumulation amount of the gas to the reference accumulation amount or a difference between the estimated accumulation amount of the gas and the reference accumulation amount.

5. The substrate processing apparatus according to claim 1, wherein: The pair of flow limiters are both mass flow controllers, When the flow rate of the gas cannot be restricted to the set flow rate, the control valve inside the flow rate limiter is fully opened or fully closed.

6. The substrate processing apparatus according to claim 1, wherein: The pair of spray devices are U-turn nozzles having four or more spray holes arranged in a plane parallel to the substrate, The accumulation of the gas in the one tank and the release of the gas from the one tank are repeated in a state where the time from the start of accumulation to the start of release is fixed.

7. The substrate processing apparatus according to claim 6, wherein: The gas is stored in the one tank and released from the one tank substantially simultaneously.

8. The substrate processing apparatus according to claim 2 or 3, wherein: The control unit performs the correction by multiplying the set flow rate by a ratio of the integrated flow rate calculated in the one tank to the reference storage amount and a preset first correction coefficient.

9. The substrate processing apparatus according to claim 2 or 3, wherein: The control unit performs the correction by adding, to the set flow rate, a product of a difference between the integrated flow rate calculated in the one tank and the reference storage amount and a preset second correction coefficient.

10. The substrate processing apparatus according to claim 8, wherein The storage time of the gas in the one tank is divided into a first period in which the flow rate limiter supplies the gas at the set flow rate and a second period in which the flow rate limiter supplies the gas at a flow rate smaller than the set flow rate. A first correction coefficient is set based on a ratio of a sum of a length of the first section and a length of the second section relative to the length of the first section.

11. The substrate processing apparatus according to any one of claims 2 to 4, wherein: The control unit performs the correction before a film forming process on the substrate.

12. The substrate processing apparatus according to claim 10, wherein: The control unit changes the first correction coefficient based on the pressure or temperature on the primary side of the flow rate restrictor at a preset timing before the start of the second interval.

13. The substrate processing apparatus according to any one of claims 2 to 4, wherein: The substrate processing apparatus further includes a pair of vaporizers that vaporize the gas in a liquid state at a target temperature and supply the vaporized gas to the pair of flow limiters at a pressure determined according to a saturated vapor pressure at the target temperature.

14. The substrate processing apparatus according to claim 13, wherein: The substrate processing apparatus further includes a pair of tank heaters configured to heat the pair of tanks to the same temperature.

15. The substrate processing apparatus according to claim 14, wherein: The pair of flow restrictors each include an orifice and a control valve for controlling the pressure of the gas on the primary side of the orifice, and the flow rate of the gas is controlled by utilizing a blocked flow of the orifice.

16. The substrate processing apparatus according to any one of claims 2 to 4, wherein: The storage time of the gas in the one tank is divided into a first interval in which the flow rate limiter supplies the gas at the set flow rate and a second interval in which the flow rate limiter supplies the gas at a flow rate smaller than the set flow rate, The control unit performs the correction by synthesizing a first correction value and a second correction value, wherein the first correction value is a correction value set based on the accumulated flow calculated by one of the flow limiters in the first interval, and the second correction value is a correction value set based on the pressure gradient in the second interval or the flow per unit time obtained by integrating the flow.

17. A gas supply system, characterized in that: have: (ab) a pair of tanks connected to respective ones of a pair of injection devices for supplying a film-forming gas to the substrate and storing the gas; (c) a pair of on-off valves for controlling fluid communication of the gas between the corresponding injection devices and the tank; (d) a pair of pressure gauges for measuring the pressure inside each of the pair of tanks during the process of accumulating the gas; (e) a pair of flow rate limiters for supplying the gas to each of the pair of tanks at a set flow rate that is predetermined to form a reference accumulation amount serving as a target amount of the gas; (f) A control unit configured to control fluid communication and accumulate the gas in one of the pair of tanks through the on-off valve, measure the pressure inside the one tank during the accumulation of the gas through the pressure gauge, calculate the cumulative flow rate of the gas to the one tank or the accumulated amount of the one tank, and correct the set flow rate to be close to the reference accumulated amount based on the measured pressure and the calculated cumulative flow rate or the accumulated amount.

18. A substrate processing method, characterized in that: The substrate processing apparatus includes a pair of tanks connected to respective injection devices for supplying film forming gases to the substrate and storing the gases. In the substrate processing apparatus, One of the pair of tanks controls fluid communication and accumulates the gas, measuring the pressure inside the one tank during the process of accumulating the gas, calculating the cumulative flow rate of the gas to the one tank or the accumulated amount of the gas in the one tank, Based on the measured pressure and the calculated integrated flow rate or the stored amount, the set flow rate of the gas supplied to each of the pair of tanks is corrected to a reference stored amount close to a target amount of the gas.

19. A method for manufacturing a semiconductor device, characterized in that: The substrate processing apparatus includes a pair of tanks connected to respective injection devices for supplying film forming gases to the substrate and storing the gases. Using the substrate processing apparatus, One of the pair of tanks controls fluid communication and accumulates the gas, measuring the pressure inside the one tank during the process of accumulating the gas, calculating the cumulative flow rate of the gas to the one tank or the accumulated amount of the gas in the one tank, Based on the measured pressure and the calculated integrated flow rate or the accumulated amount, the set flow rate of the gas supplied to each of the pair of tanks is corrected to a reference accumulated amount close to the target amount of the gas; The gases are respectively supplied toward the substrate by the pair of injection devices at the calibrated set flow rates.

20. A gas supply process, characterized in that: The substrate processing apparatus includes a pair of tanks and one or more processors. The pair of tanks are connected to respective injection devices of a pair of injection devices for supplying film-forming gases to the substrate and storing the gases. In the substrate processing apparatus, the processor is caused to perform the following processing: a process for controlling fluid communication and accumulating the gas in one of the pair of tanks; a process of measuring the pressure inside the one tank during accumulation of the gas; a process of calculating the cumulative flow rate of the gas to the one tank or the accumulated amount of the gas in the one tank; as well as A process of correcting the set flow rate of the gas supplied to each of the pair of tanks to a value close to a reference storage amount serving as a target amount of the gas based on the measured pressure and the calculated integrated flow rate or the storage amount.

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