Crystal cutting method capable of rapidly orienting and slicing

Abstract

The invention discloses a crystal cutting method capable of rapidly orienting and slicing. The crystal cutting method comprises the steps of cutting preparation, crystal coiling, diamond wire winding, single-wire cutting and multi-wire cutting process setting and crystal orienting. Wherein cutting parameters need to be set according to the diameter of a crystal blank during single-wire cutting and multi-wire cutting, and winding needs to be conducted according to the product size during multi-wire winding. Position adjustment during crystal directional machining can be achieved, the crystal does not need to be taken down, the cutting efficiency is improved, meanwhile, the change amount of the morphology of a cut crystal slice can be reduced, the curvature, the warping degree and the total thickness deviation of the surface of a product obtained after cutting are small, and the quality of the cut slice is improved.

Description

Technical Field

[0001] The present invention relates to the field of artificial crystal growth equipment, and in particular to a crystal cutting method for rapid orientation and slicing. Background Art

[0002] Crystal materials are widely used and come in a variety of forms, generally in the form of discs, cubes, and cylinders of varying sizes. Due to the anisotropic nature of crystal materials, the raw crystal must be oriented before processing, and then undergo various processing steps to complete the crystal processing. Wafer thin slices, as one of these materials, are more difficult to process, generally using the method of orientation-segmentation-slicing-grinding and polishing. Orientation methods include single-wire cutting and internal circular cutting. After orientation, segmentation methods include multi-wire cutting, internal circular cutting, and single-wire cutting. After segmentation, slicing is generally performed using multi-wire cutting.

[0003] Traditional methods of orientation, segmentation and slicing belong to different process flows and require different equipment for processing. Repeated loading and unloading is not only time-consuming and labor-intensive, with a long cycle, but also seriously affects the accuracy and output rate, which is a bottleneck in crystal processing technology. Summary of the Invention

[0004] In order to solve the above problems, the present invention adopts a one-step approach, which is to cut the crystal to be processed from the rough state into the required wafer slices in one turn and then grind and polish it into the required product using the same equipment.

[0005] The present invention provides a crystal cutting method for rapid orientation and slicing, comprising the following steps: Step S1: Detect the diameter and length of the crystal blank to be cut.

[0006] Step S2, fixing the crystal blank to be cut on a cutting device; the cutting device includes a cutting table, an adjustment component, a base and a cutting component; the cutting component includes a first roller, a second roller and a diamond wire wrapped around its surface, wherein the first roller and the second roller are arranged parallel to each other above the cutting device.

[0007] Step S3: Winding diamond wire on the cutting assembly and setting cutting parameters, including single-wire cutting parameters and multi-wire cutting parameters.

[0008] Step S4: After the cutting parameters are set, the part of the crystal blank to be cut is translated to the bottom of the cutting component through the adjustment component, and the crystal axis of the crystal blank is adjusted to be perpendicular to the cutting surface, and the oriented slice is cut using a single-line cutting method.

[0009] Step S5, after the single line cutting is completed, the crystal is oriented to the required angle value range. In some preferred embodiments, the orientation specifically refers to drawing a cross perpendicular line on the cut crystal wafer according to the line mark, measuring the crystal orientation angle of the perpendicular line, calculating the deviation value; adjusting the position of the cutting table according to the deviation value, so that the crystal on the cutting table has a crystal axis perpendicular to the cutting surface.

[0010] Step S6, after the orientation is completed, the multi-line cutting mode is performed, the multi-line winding is performed according to the product thickness size, the crystal position is unchanged, and the adjustment assembly is adjusted to translate the to-be-cut part to the cutting assembly below for cutting.

[0011] Further, the diamond wire winding mode includes single line, multi-line or combined winding mode, and the combined winding refers to single line and multi-line at the same time. More specifically, when the combined winding is used, a certain space is reserved in front and behind the single line without winding the diamond wire, so that only one diamond wire performs crystal cutting in the cutting process.

[0012] Further, in step S3, the single line cutting parameter is set as follows: the tension adjustment is selected as 60% to 80% of the breaking tension of the wire diameter of the parent line, and the set range is 20 to 40 N; the cutting line speed is 800 to 1500 m / min; the swing angle is 5 to 15°, and the swing frequency is 20 to 30 times / min; the cutting feed speed is set in a multi-section cutting mode, 5 to 10 sections are set according to the height of the to-be-cut crystal blank, and the corresponding feed speed is set to 0.1 to 0.5 mm / min; the wire supply loss range is 5 to 30 m / min.

[0013] Further, in step S3 or S6, the multi-line cutting parameter is set as follows: the tension adjustment is selected as 60% to 80% of the breaking tension of the wire diameter of the parent line, and the set range is 20 to 40 N; the cutting line speed is 800 to 1500 m / min; the swing angle is 5 to 15°, and the swing frequency is 20 to 30 times / min; the cutting feed speed is set in a multi-section cutting mode, 5 to 10 sections are set according to the height of the to-be-cut crystal, and the corresponding feed speed is set to 0.1 to 0.5 mm / min; the wire supply loss range is 20 to 30 m / min.

[0014] In some preferred embodiments, the cutting table is provided with a U-shaped groove, the height of the U-shaped groove is lower than the radius of the crystal blank, and the material of the U-shaped groove is preferably graphite carbon material.

[0015] Further, the diamond wire is an electroplated diamond wire, and the wire diameter is 0.1 to 0.2 mm.

[0016] In some preferred embodiments, the adjustment component includes an angular adjustment part, a crystal axial rotation part, and a displacement adjustment part; the crystal axial rotation part is fixed under the cutting table, and includes a rotating mechanism that can rotate horizontally around a vertical direction, driving the cutting table to rotate in the horizontal direction; the angular adjustment part is placed under the crystal axial rotation part and can adjust the inclination angle of the cutting table; the displacement adjustment part is placed on the base for controlling the forward and backward translation of the cutting table, and the displacement adjustment part is fixedly connected to the angular adjustment part.

[0017] Beneficial effects of the present invention: The present invention can realize the position adjustment during crystal directional processing without removing the crystal, thereby improving the cutting efficiency and reducing the variation in the morphology of the cut crystal slices, so that the curvature, warpage and total thickness deviation of the product surface obtained after cutting are small, thereby improving the quality of the cut slices. 1. The cutting device of the present invention is a customized multi-axis cutting equipment that can perform a variety of winding methods, including single-wire winding, multi-wire winding, and combined winding, and is used for crystal embryo opening, slicing, and dicing. By innovating different winding methods, single-wire cutting and multi-wire slicing can be performed on the same machine and table without disassembling the plate, and crystals of different sizes and thicknesses can be cut simultaneously. At the same time, the cutting device has a swing function at a certain angle, and has a strong cutting force.

[0018] 2. The adjustment component of the cutting device can realize three-dimensional adjustment in space. The XY axis can be adjusted to the required angle value range. The Z axis adjustment can achieve multiple continuous and rapid cutting without putting the plate down. The orientation angle is highly accurate and can be lower than 5' level.

[0019] 3. Innovate cutting technology, optimize cutting tension, feed speed, cutting line speed, wire supply speed, and cutting swing angle to achieve single-line and multi-line cutting of crystals without line breaks, less line loss, fewer cutting surface marks, good surface roughness, and less wafer warping.

[0020] 4. The crystal blank is fixed and bonded to the cutting table with special tooling. It is firm and does not damage the crystal surface, does not generate large stress, does not crack, does not fall off after multiple cuttings, and can be quickly loaded and unloaded. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figure 1 This is a schematic diagram of the operation flow of one embodiment of the present invention; Figure 2 It is a schematic diagram of the overall structure of the cutting device; Figure 3 This is a schematic diagram of one of the winding methods for the rollers in the cutting assembly; Figure 4 yes Figure 3 Side view of Figure 5is a schematic view of the adjusting assembly in one embodiment, from top to bottom are the crystal axial rotating member, the angular position adjusting member and the displacement adjusting member.

[0022] Description of the figure: 100, cutting device; 1, cutting table; 2, adjusting assembly; 21, angular position adjusting member; 22, crystal axial rotating member; 23, displacement adjusting member; 3, base; 4, crystal; 5, cutting assembly; 51, first roller; 52, second roller; 53, diamond wire. DETAILED DESCRIPTION

[0023] In order to better understand the technical solutions of the present application, the embodiments of the present application will be described in detail below with reference to the accompanying drawings.

[0024] It should be clear that the described embodiments are only some of the embodiments of the present application, not all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative labor fall within the scope of protection of the present application.

[0025] The present application provides a crystal cutting method for rapid orientation and slicing, including the following processes: cutting preparation, crystal up-disk, winding single wire and / or multiple wires, cutting process setting, single wire cutting, crystal orientation, multiple wire cutting, wherein the single wire cutting and the multiple wire cutting both need to set the cutting parameters according to the diameter of the crystal blank, and the multiple wire winding needs to be wound according to the product size.

[0026] Figure 2 The cutting device 100 used in the present application is shown in the schematic view, which includes a cutting table 1 for carrying the crystal to be cut 4, an adjusting assembly 2, a base 3 and a cutting assembly 5; the adjusting assembly 2 is arranged between the cutting table 1 and the base 3, and is used to adjust the spatial position of the crystal 4 on the cutting table 1; the cutting assembly 5 includes a first roller 51, a second roller 52 and a diamond wire 53, and the first roller 51 and the second roller 52 are arranged in parallel above the cutting device 100. The cutting table 1 is a platform with a U-shaped groove, and the crystal 4 is fixed in the U-shaped groove. The first roller 52 and the second roller 53 are made of polyurethane material with wire grooves opened on the surface, and the groove width of the wire groove is related to the slice thickness of the crystal to be cut 4.

[0027] In some preferred embodiments, as Figure 5As shown, the adjustment assembly 2 includes an angular position adjustment member 21, a crystal axial rotation member 22, and a displacement adjustment member 23. The crystal axial rotation member 22 is fixed below the cutting table 1 and includes a rotating mechanism that can rotate horizontally around the vertical direction, driving the cutting table 1 to rotate horizontally. The angular position adjustment member 21 is placed below the crystal axial rotation member 22 and can adjust the inclination angle of the cutting table 1 in a direction perpendicular to the cutting table 1. The displacement adjustment member 23 is placed on the base 3 and is used to control the forward and backward translation of the cutting table 1. The displacement adjustment member 23 is fixedly connected to the angular position adjustment member 21.

[0028] Specific implementation method Figure 1 , the steps are as follows: Step S1: prepare the crystal 4 blank to be cut, and detect the diameter and length information; start the cutting device 100 and check to ensure normal operation; prepare relevant machine materials and consumables; and adjust the cutting table 1 normally.

[0029] Step S2, fix the crystal 4 blank to be cut in the U-shaped groove of the cutting table 1, for example, using a fast-curing adhesive with strong adhesion, no high temperature to cause the crystal to crack, and no toxicity to the human body. The height of the U-shaped groove is lower than 1 / 2 of the diameter of the crystal 4 blank. For example, graphite carbon material can be used, which is soft and easy to cut, and can play a good role in fixing. Then fix the U-shaped groove on the cutting table 1 with glue. During cutting, the U-shaped groove and the crystal 4 to be cut are cut into thin slices at the same time, such as Figure 2 The diagram shows the U-shaped groove in use.

[0030] Step S3: The cutting machine winds a single wire and / or multiple wires and sets the cutting parameters. A certain width is left before and after the single wire so that only one diamond wire 53 is cutting during the cutting process, and the other diamond wires 53 do not contact the crystal blank 4. The cutting wire is an electroplated diamond wire 53 with a wire diameter of 0.1-0.2 mm to achieve optimal cutting force, wire loss, and cutting efficiency.

[0031] Furthermore, the single-wire cutting parameters are set as follows: the tension is adjusted to 60% to 80% of the breaking tension of the wire diameter of the busbar, and the setting range is 20~40N; the cutting line speed is 800~1500m / min; the swing angle is 5~15°, and the number of swings is 20~30 times / min; the cutting feed speed is set to adopt a multi-segment cutting method, and 5~10 segments are set according to the height of the crystal blank to be cut, and the corresponding feed speed is set to 0.1~0.5mm / min respectively; the wire supply loss range is 5~30m / min.

[0032] Step S4: After the cutting process is set, the crystal 4 to be cut is translated below the cutting assembly 5 by adjusting the displacement adjustment member 23 in the adjustment assembly 2. The various components of the adjustment assembly 2 are adjusted so that the axis of the rough crystal 4 to be cut is perpendicular to the cutting plane, so that the single-wire cut oriented slice is closer to the desired plane angle. The cutting table 1 is raised until the diamond wire 53 just contacts the crystal, the cooling water is turned on, and the cutting process begins.

[0033] Step S5: Single-line cutting is complete and orientation is performed. Remove the cutting disc and draw vertical cross lines along the line marks, corresponding to the X and Y axes respectively. Measure the crystal orientation angle of the vertical lines and calculate the deviation value. Adjust the adjustment component 2 again based on the deviation value and repeat the orientation measurement with single-line cutting until the crystal is oriented to the desired angle value range.

[0034] Step S6: After the orientation is completed, multi-wire slicing is performed. According to the thickness of the product, the diamond wire 53 is wound on the first roller 51 and the second roller 52. The crystal position remains unchanged, and the multi-wire cutting is directly rewound. The winding method can also be calculated in advance according to the cutting position and crystal length before cutting the single wire, and a single-wire and multi-wire combination wire can be wound. When cutting multiple wires, the horizontal position of the cutting table 1 can be adjusted.

[0035] Furthermore, the multi-wire cutting parameters are set, and the tension is adjusted to 60% to 80% of the breaking tension of the busbar wire diameter, with a setting range of 20~40N; the cutting line speed is 800~1500m / min; the swing angle is 5~15°, and the number of swings is 20~30 times / min; the cutting feed speed is set using a multi-segment cutting method, and 5~10 segments are set according to the height of the crystal to be cut, and the corresponding feed speed is set at 0.1~0.5mm / min respectively; the wire loss range is 20~30m / min.

[0036] Step S7: After the multi-wire cutting parameters are set, the cutting table 1 is adjusted to below the multi-wire, the cutting table 1 is raised until the diamond wire 53 just touches the crystal, the cooling water is turned on, and the cutting is started.

[0037] The implementation cases are as follows: Example 1: Cutting small-sized crystals. For example, a doped magneto-optical crystal with a diameter of 56 mm and a length of 40 mm needs to be cut into wafers with a thickness of 1.0 ± 0.03 mm.

[0038] Use combined winding method, such as Figure 3 and Figure 4 As shown, the front portion of the second roller 52 is wound with a single wire ( Figure 4 The area indicated by A1 in the figure), the rear part is wound with multiple wires ( Figure 4A 40mm gap is left in front of the single wire (in the area indicated by A2), and a 60mm gap is left behind. A group of 30 to 40 diamond wires 53 with a 1.2mm groove pitch are then wound around the rear of the second roller 52. This arrangement ensures that the single wire does not touch the multiple diamond wires 53 wound around the rear of the second roller 52 when cutting the crystal 4.

[0039] According to the process, the crystal 4 blank is glued in the U-shaped groove and fixed on the cutting table 1, and the single-wire cutting parameters are set: the tension is set to 20~40N; the cutting line speed is 800~1200m / min; the swing angle is 5~15°, and the number of swings is 20~30 times / min; the cutting feed speed is set using a three-stage cutting method, with each section cutting height of 20mm, and the feed speeds are set to 0.3~0.4mm / min, 0.2~0.3mm / min, and 0.3~0.4mm / min respectively; the wire feed loss range is 10~20m / min.

[0040] After the single-line cutting is completed, the angle of the cutting piece is tested using an orientation meter, and the deviation from the theoretical angle is calculated. The crystal axis angle of the crystal 4 to be cut on the cutting machine is adjusted, and the orientation angle is measured again using a single-line cutting to confirm that the orientation is within the required angle value range, and then multi-line cutting is prepared.

[0041] Move the displacement adjustment member 23 of the adjustment assembly 2 so that the crystal 4 is positioned below the rear multi-wire section of the second roller 52. Set the multi-wire cutting parameters as follows: tension set to 20-40N; cutting line speed to 800-1200m / min; swing angle to 5-15°, swing frequency to 20-30 times / min; use a five-stage cutting method, with each stage cutting height of 20mm and feed speeds set to 0.3-0.4mm / min, 0.2-0.3mm / min, 0.1-0.2mm / min, 0.2-0.3mm / min, and 0.3-0.4mm / min, respectively; and wire loss range to 20-30m / min. Turn on the cooling water and start cutting.

[0042] The cutting effect is good, and the whole process only takes about 10 to 15 hours. The orientation accuracy is <4'. 30 to 40 complete and crack-free wafers are cut according to the predetermined quantity. The thickness tolerance is <0.01mm, the total thickness difference of a single piece is <0.01mm, the wafer warpage is <0.01mm, the surface roughness is good, there are no serious line marks, and it meets the requirements of subsequent product processing.

[0043] Example 2: Cutting medium-sized crystals. For example, a laser crystal with a diameter of 73mm and a length of 80mm needs to be cut into 1.4mm thick wafers. The combined winding method is also used, such as Figure 3 and Figure 4As shown, the front portion of the second roller 52 is wound with a single wire ( Figure 4 The area indicated by A1 in the figure), the rear part is wound with multiple wires ( Figure 4 (Area A2 in the figure). At this point, leave 60mm in front of the single wire and 100mm behind it. Then, wind a set of 40 to 60 multi-wires with a 1.6mm groove pitch around the rear of the second roller 52. According to the process, glue the crystal blank 4 into the U-shaped groove and secure it to the cutting table 1, ready for single-wire cutting.

[0044] The single-wire cutting parameters are as follows: the tension is set to 20~40N; the cutting line speed is 1200~1500m / min; the swing angle is 15°, and the swing frequency is 30 times / min; the cutting feed speed is set using a 5-segment cutting method, with each cutting height of 15mm, and the feed speeds are set to 0.4~0.5mm / min, 0.3~0.4mm / min, 0.2~0.3mm / min, 0.3~0.4mm / min, and 0.4~0.5mm / min respectively; the wire loss range is 5~10m / min.

[0045] After the single-line cut is completed, the angle of the cut piece is measured using an orienter and the deviation from the theoretical angle is calculated. The angle of the crystal 4 to be cut on the cutting table 1 is adjusted and the single-line cut is performed again to measure its orientation angle to confirm that the orientation is within the desired angle range.

[0046] Move cutting table 1 so the crystal is below the multi-wire cutting process and set the multi-wire cutting parameters. Specifically, set the tension to 20-40N; the cutting line speed to 1000-1500m / min; the swing angle to 10-15°, and the swing frequency to 10-20 times / min; the cutting feed speed is set to a 10-stage cutting method, with each stage cutting height of 7.5mm. The feed speeds are set to 0.4-0.5mm / min, 0.3-0.4mm / min, 0.2-0.3mm / min, 0.1-0.2mm / min, 0.1-0.2mm / min, 0.1-0.2mm / min, 0.2-0.3mm / min, 0.3-0.4mm / min, and 0.4-0.5mm / min; the wire loss range is 20-30m / min. Turn on the cooling water and start cutting.

[0047] The cutting effect is good, and the whole process only takes about 15 to 20 hours. The orientation accuracy is <6'. 50 to 60 complete and crack-free wafers are cut according to the predetermined quantity. The thickness tolerance is <0.02mm, the total thickness difference of a single piece is <0.01mm, the wafer warpage is <0.01mm, the surface roughness is good, there are no serious line marks, and it meets the requirements of subsequent product processing.

[0048] Example 3, cutting large size crystal. For example, cutting a doped magneto-optical crystal, the crystal diameter is 100 mm, the length is 120 mm, and it needs to be cut into a 1.3±0.02 mm thick wafer. A single line + multi-line winding method is used, the single line is wound in the middle position of the second roller 52, and the front and back are left with a space of 80 mm, so that the single line does not cut the crystal when cutting, and after the orientation is completed, the multi-line is wound again, 70-90 multi-lines of 1.5 mm groove pitch.

[0049] According to the process, the crystal blank is bonded in the U-shaped groove and fixed on the cutting table 1, and the single line cutting parameters are set: the tension is set to 20-40 N; the cutting line speed is 1200-1500 m / min; the swing angle is 5-15°, and the swing frequency is 10-20 times / min; the cutting feed speed is set by using a 5-section cutting method, the cutting height of each section is 25 mm, and the feed speed is set to 0.4-0.5 mm / min, 0.3-0.4 mm / min, 0.2-0.3 mm / min, 0.3-0.4 mm / min, and 0.4-0.5 mm / min respectively; the line supply loss range is 20-30 m / min.

[0050] Single line cutting, orientation to the required angle value range, move the displacement adjustment piece 23 of the displacement adjustment assembly 2 to make the crystal below the multi-line of the second roller 52, set the multi-line cutting parameters: the tension is set to 20-40 N; the cutting line speed is 1200-1500 m / min; the swing angle is 5-15°, and the swing frequency is 10-20 times / min; the cutting feed speed is set by using a 10-section cutting method, the cutting height of each section is 12 mm, and the feed speed is set to 0.5-0.6 mm / min, 0.4-0.5 mm / min, 0.3-0.4 mm / min, 0.2-0.3 mm / min, 0.1-0.2 mm / min, 0.1-0.2 mm / min, 0.2-0.3 mm / min, 0.3-0.4 mm / min, 0.4-0.5 mm / min, and 0.5-0.6 mm / min respectively; the line supply loss range is 20-30 m / min. Turn on the cooling water and start cutting.

[0051] The cutting effect is good, and only about 20-30 hours are needed throughout the process, the orientation accuracy is <6′, 70-90 complete and non-cracked wafers are cut according to the predetermined number, the thickness tolerance is <0.02 mm, the total thickness difference of a single piece is <0.01 mm, the wafer warpage is <0.01 mm, the surface roughness is good, there is no serious line mark, and it meets the subsequent processing requirements of the product.

[0052] The above is only a preferred embodiment of the present application, and does not limit the technical scope of the present application in any way, so any slight modification, equivalent change and modification made according to the technical essence of the present application to the above embodiment still belongs to the protection scope of the present application.

Claims

1. A method for rapid orientation and slicing of crystals, characterized in that: The following steps are involved: Step S1, detecting the diameter and length of the crystal blank to be cut; Step S2: Fixing the crystal blank to be cut on a cutting device; the cutting device includes a cutting table, an adjustment component, a base, and a cutting component; the cutting component includes a first roller, a second roller, and a diamond wire wrapped around the surface thereof, wherein the first roller and the second roller are arranged in parallel above the cutting device; Step S3, winding diamond wire on the cutting assembly and setting cutting parameters, including single-wire cutting parameters and multi-wire cutting parameters; Step S4: After the cutting parameters are set, the portion of the crystal blank to be cut is translated to the bottom of the cutting assembly by the adjustment assembly, and the crystal axis of the crystal blank is adjusted to be perpendicular to the cutting surface, and the oriented slice is cut using a single-line cutting method; Step S5: After the single-line cutting is completed, orientation is performed to orient the crystal to the desired angle value range; Step S6: After the orientation is completed, multi-wire cutting is performed, and multi-wire winding is performed according to the thickness of the product. The position of the crystal remains unchanged, and the adjustment component is adjusted to move the part to be cut horizontally to the bottom of the cutting component for cutting.

2. A crystal cutting method for rapid orientation and slicing according to claim 1, characterized in that: Diamond wire winding methods include single-wire, multi-wire or combined winding methods, and the combined winding method refers to the combination of single-wire and multi-wire.

3. A crystal cutting method for rapid orientation and slicing according to claim 2, characterized in that: When the combined winding is adopted, a certain space is reserved before and after the single wire so that the diamond wire is not wound around it, so that only one diamond wire is used for crystal cutting during the cutting process.

4. A crystal cutting method for rapid orientation and slicing according to claim 1, characterized in that: In step S3, the single-wire cutting parameters are set as follows: the tension is adjusted to 60% to 80% of the breaking tension of the busbar wire diameter, and the setting range is 20~40N; the cutting line speed is 800~1500m / min; the swing angle is 5~15°, and the number of swings is 20~30 times / min; the cutting feed speed is set to adopt a multi-segment cutting method, and 5~10 segments are set according to the height of the crystal blank to be cut, and the corresponding feed speed is set to 0.1~0.5mm / min respectively; the wire loss range is 5~30m / min.

5. A crystal cutting method for rapid orientation and slicing according to claim 1, characterized in that: The multi-wire cutting parameters in step S3 or S6 are set as follows: the tension is adjusted to 60% to 80% of the breaking tension of the busbar wire diameter, and the setting range is 20~40N; the cutting line speed is 800~1500m / min; the swing angle is 5~15°, and the number of swings is 20~30 times / min; the cutting feed speed is set to adopt a multi-segment cutting method, and 5~10 segments are set according to the height of the crystal to be cut, and the corresponding feed speed is set to 0.1~0.2mm / min respectively; the wire loss range is 20~30m / min.

6. A crystal cutting method for rapid orientation and slicing according to claim 1, characterized in that: The cutting table is provided with a U-shaped groove, the height of the U-shaped groove is lower than the radius of the crystal blank, and the material of the U-shaped groove is graphite carbon material.

7. A crystal cutting method for rapid orientation and slicing according to claim 1, characterized in that: The diamond wire is an electroplated diamond wire with a wire diameter of 0.1-0.2 mm.

8. A crystal cutting method for rapid orientation and slicing according to claim 1, characterized in that: The adjustment assembly includes an angular adjustment part, a crystal axial rotation part, and a displacement adjustment part; the crystal axial rotation part is fixed under the cutting table and includes a rotating mechanism that can rotate horizontally around the vertical direction, driving the cutting table to rotate in the horizontal direction; the angular adjustment part is placed under the crystal axial rotation part and can adjust the inclination angle of the cutting table; the displacement adjustment part is placed on the base for controlling the forward and backward translation of the cutting table, and the displacement adjustment part is fixedly connected to the angular adjustment part.

9. A crystal cutting method for rapid orientation and slicing according to claim 1, characterized in that: The orientation specifically refers to drawing a cross vertical line on the cut crystal slice according to the line mark, measuring the crystal orientation angle of the vertical line, and calculating the deviation value; adjusting the position of the cutting table according to the deviation value so that the crystal axis of the crystal on the cutting table is perpendicular to the cutting surface.

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