Gas distribution disc and processing method thereof
Through heat treatment and cutting treatment combined with full-circle fixtures and computer numerical control machine tool processing, the problem of difficult control of flatness and parallelism in gas distribution disk processing was solved, and the production of gas distribution disks with high precision and low scrap rate was achieved.
Patent Information
- Application Number
- CN202510930706.6
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-07-07
- Publication Date
- 2025-10-17
AI Technical Summary
The existing processing technology of gas distribution plates makes it difficult to accurately control the flatness and parallelism, and they are prone to deformation during processing. The correction steps are cumbersome and the scrap rate is high.
Heat treatment and cutting treatment are combined with full-circle fixtures and computer numerical control machine tool processing. The gas distribution disk blank is fixed with a self-designed full-circle fixture and step-by-step machining is performed to ensure the accuracy of flatness and parallelism.
High-precision processing of gas distribution plates is achieved, no secondary correction is required, the surface is smooth, the scrap rate is reduced, and gas distribution plates that meet the use requirements are stably produced.
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Figure CN120809618A_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The present application belongs to the technical field of semiconductor, and relates to a gas distribution plate and a processing method thereof. BACKGROUND
[0002] The gas distribution plate is a commonly used semiconductor component, which is used in the reaction chamber of a semiconductor device. Etching gas can uniformly reach the wafer surface through the gas distribution plate, and react with the wafer surface to etch the required circuit pattern.
[0003] Chemical vapor deposition (CVD) is a key step in the preparation of thin film devices in semiconductor processes. Traditional chemical vapor deposition equipment includes a chemical gas distributor. Chemicals participating in the reaction overflow from the gas distributor and finally enter the reaction area to deposit on the semiconductor process piece. Uniform composition, uniform thickness and steep interface are the basic requirements for thin film growth. Improving the uniformity of thin film growth is the core task of continuous improvement of chemical vapor deposition equipment. Improving the processing technology of the gas distributor is the main method to improve the uniformity. The structure of the gas distributor usually contains hundreds or even thousands of small holes with the same diameter. The small differences in hole diameter and the flatness and parallelism of the parts directly affect the uniformity of the deposition layer thickness. Among them, the flatness of the side installed with the plating chamber affects the sealing of the gas distributor installation. Good sealing ensures that gas only overflows from the small holes. Poor sealing allows gas to overflow from the gap between the gas distributor and the plating chamber, which can cause uneven plating thickness. The flatness and parallelism of the side facing the semiconductor process piece affect the distance to the piece to be plated. Even a very small difference can cause different plating thicknesses.
[0004] That is, the flatness and parallelism of the gas distribution plate require very high precision. The thickest part of the gas distribution plate is 5-10 mm, and the thinnest part (i.e., the part where the small holes are opened) is only 1.5 mm thick. In today's processing technology, the raw material is clamped in the fixture of the machine tool. During the processing process, the raw material gradually thins out. The clamping force inevitably causes the gas distribution plate to deform slightly. Subsequent processing is required to correct the flatness and parallelism of the gas distribution plate. On the one hand, the gas distribution plate is deformed during the processing stage. On the other hand, the correction steps are relatively complicated, and the correction effect cannot be guaranteed to be ideal, and the probability of scrap is relatively high.
[0005] Therefore, it is necessary to provide a processing method of a gas distribution plate to solve the above problems. SUMMARY
[0006] In view of the deficiencies of the prior art, the present application aims to provide a processing method, which is simple in process and can produce a semiconductor machine table component gas distribution plate sheet meeting use requirements by combining a full-circle clamp and simple machining.
[0007] To achieve the object of the present application, the present application adopts the following technical solutions:
[0008] In a first aspect, the present application provides a processing method of a gas distribution plate, characterized in that the processing method comprises the following steps:
[0009] (1) heat treating a metal blank, and then performing cutting treatment to obtain a gas distribution plate blank;
[0010] (2) opening distribution holes in the gas distribution plate blank of step (1), fixing by using a full-circle clamp, and then performing machining to obtain the gas distribution plate.
[0011] The processing method provided by the present application is simple in process and can ensure the machining precision of the gas distribution plate by combining a full-circle clamp and simple machining, without the need for secondary correction of the flatness and parallelism of the gas distribution plate, and the surface of the gas distribution plate is free of knife marks.
[0012] It is worth noting that the material of the metal blank of the present application includes any one of A6061, A6063 or A3003 or the like semiconductor special material.
[0013] As a preferred technical solution of the present application, the temperature of the heat treatment of step (1) is 325-335℃, for example, it can be 325℃, 327℃, 329℃, 331℃, 333℃ or 335℃, but is not limited to the listed values, and other values not listed within the value range are also applicable.
[0014] Preferably, the heat treatment of step (1) has a holding time of 117-123min, for example, it can be 117min, 118min, 119min, 120min, 121min, 122min or 123min, but is not limited to the listed values, and other values not listed within the value range are also applicable.
[0015] In the present application, the purpose of the heat treatment is to change the internal structure of the metal blank so that the stress of the metal material is fully released, and the performance is consistent.
[0016] In addition, the heat treatment of step (1) of the present application further comprises air cooling treatment.
[0017] As a preferred technical solution of the present application, the cutting treatment of step (1) comprises computer numerical control machine tool machining.
[0018] Preferably, the rotation speed in the cutting process is 450-550 r / min, for example, it can be 450 r / min, 470 r / min, 490 r / min, 510 r / min, 530 r / min or 550 r / min, etc., but not limited to the listed values, other values not listed in the value range are also applicable.
[0019] Preferably, the turning speed of the cutting process is 20-30 mm / min, for example, it can be 20 mm / min, 22 mm / min, 24 mm / min, 26 mm / min, 28 mm / min or 30 mm / min, etc., but not limited to the listed values, other values not listed in the value range are also applicable.
[0020] Preferably, the machining allowance of the cutting process is 0.05-0.1 mm, for example, it can be 0.05 mm, 0.06 mm, 0.07 mm, 0.08 mm, 0.09 mm or 0.1 mm, etc., but not limited to the listed values, other values not listed in the value range are also applicable.
[0021] Preferably, the cutting process in step (1) uses cutting fluid for cooling.
[0022] Preferably, the cutting tool used in the cutting process in step (1) includes 35-degree VCGT160404.
[0023] As a preferred technical solution of the present application, the flatness of the gas distribution plate blank in step (1) is ≤0.02 mm, for example, it can be 0.02 mm, 0.019 mm, 0.018 mm, 0.017 mm, 0.016 mm or 0.015 mm, etc., but not limited to the listed values, other values not listed in the value range are also applicable.
[0024] Preferably, the parallelism of the gas distribution plate blank in step (1) is ≤0.02 mm, for example, it can be 0.02 mm, 0.019 mm, 0.018 mm, 0.017 mm, 0.016 mm or 0.015 mm, etc., but not limited to the listed values, other values not listed in the value range are also applicable.
[0025] In the present application, the diameter of the gas distribution plate blank in step (1) is 251-253 mm, for example, it can be 251 mm, 251.4 mm, 251.8 mm, 252.2 mm, 252.6 mm or 253 mm, etc., but not limited to the listed values, and other values not listed in the value range are also applicable; the thickness is 9-11 mm, for example, it can be 9 mm, 9.4 mm, 9.8 mm, 10.2 mm, 10.6 mm or 11 mm, etc., but not limited to the listed values, and other values not listed in the value range are also applicable.
[0026] It is worth noting that the present application does not limit the method of opening the distribution holes in step (2), as long as the distribution holes can be opened and the function of the gas distribution plate is not affected.
[0027] As a preferred technical solution of the present application, the full-circle clamp in step (2) includes a fixed disc.
[0028] Preferably, according to the direction from the center outward, the surface of the fixed disc is provided with fixed holes and fixed columns corresponding one-to-one to the distribution holes of the gas distribution plate.
[0029] Preferably, the outer diameter of the fixed column is the same as the inner diameter of the distribution hole of the gas distribution plate.
[0030] Preferably, the height of the fixed column is 1.1-1.4 mm, for example, it can be 1.1 mm, 1.2 mm, 1.3 mm or 1.4 mm, etc., but not limited to the listed values, and other values not listed in the value range are also applicable.
[0031] Preferably, the material of the fixed column includes magnesium-silicon aluminum alloy, specifically A6063.
[0032] Preferably, the number of fixed holes is 4-8, for example, it can be 4, 5, 6, 7 or 8.
[0033] Preferably, the fixed hole includes a threaded hole with a diameter of 2.5-3.5 mm, wherein the diameter of the threaded hole can be, for example, 2.5 mm, 2.7 mm, 2.9 mm, 3.1 mm, 3.3 mm or 3.5 mm, etc., but not limited to the listed values, and other values not listed in the value range are also applicable.
[0034] Preferably, the depth of the fixed hole is 8-12 mm, for example, it can be 8 mm, 9 mm, 10 mm, 11 mm or 12 mm, etc., but not limited to the listed values, and other values not listed in the value range are also applicable.
[0035] The fixing method of the full-circumferential clamp comprises the following steps: firstly, assembling the fixing disc and the gas distribution disc blank through the fixing column, and then assembling the screw in the fixing hole, so that the fixing disc and the gas distribution disc blank are locked, thereby realizing the fixing of the gas distribution disc.
[0036] In the present application, the full-circumferential clamp can be used to fix the gas distribution disc blank, thereby reducing the possibility of vibration marks on the product surface in the subsequent mechanical machining process.
[0037] As a preferred technical solution of the present application, the mechanical machining in step (2) comprises computer numerical control machine tool machining.
[0038] Preferably, the mechanical machining comprises rough turning and finish turning in sequence.
[0039] Preferably, cutting fluid is used for cooling in the mechanical machining.
[0040] Preferably, the rotating speed in the rough turning is 250-350 r / min, for example, it can be 250 r / min, 270 r / min, 290 r / min, 310 r / min, 330 r / min or 350 r / min, etc., but is not limited to the listed values, and other values not listed in the value range are also applicable.
[0041] Preferably, the turning speed in the rough turning is 0.07-0.10 mm / r, for example, it can be 0.07 mm / r, 0.08 mm / r, 0.09 mm / r or 0.10 mm / r, etc., but is not limited to the listed values, and other values not listed in the value range are also applicable.
[0042] Preferably, the machining allowance in the rough turning is 0.04-0.08 mm, for example, it can be 0.04 mm, 0.05 mm, 0.06 mm, 0.07 mm or 0.08 mm, etc., but is not limited to the listed values, and other values not listed in the value range are also applicable.
[0043] Preferably, the rotating speed in the finish turning is 380-420 r / min, for example, it can be 380 r / min, 390 r / min, 400 r / min, 410 r / min or 420 r / min, etc., but is not limited to the listed values, and other values not listed in the value range are also applicable.
[0044] Preferably, the turning speed in the finish turning is 0.04-0.06 mm / r, for example, it can be 0.04 mm / r, 0.044 mm / r, 0.048 mm / r, 0.052 mm / r, 0.056 mm / r or 0.06 mm / r, etc., but is not limited to the listed values, and other values not listed in the value range are also applicable.
[0045] Preferably, the tool used in the mechanical processing of step (2) comprises 35-degree VCGT160404.
[0046] Preferably, the mechanical processing of step (2) further comprises a wiping treatment, specifically, using alcohol to wipe the surface of the gas distribution plate.
[0047] In the present application, the cutting treatment of step (1) and the mechanical processing of step (2) are both processed by computer numerical control machine tools, which have high processing precision, and in combination with the full-circle clamp designed independently, can ensure that the gas distribution plate meets the processing requirements of flatness and parallelism, and can stably produce gas distribution plates that meet the use requirements.
[0048] In addition, the cutting fluid used in the cutting treatment of step (1) and the mechanical processing of step (2) comprises 3380 emulsifier and water; the mass ratio of the 3380 emulsifier and water is 1:10-12, for example, it can be 1:10, 1:10.4, 1:10.8, 1:11.2, 1:11.6 or 1:12, etc., but not limited to the listed values, other values not listed in the value range are also applicable.
[0049] As a preferred technical solution of the present application, the processing method of the gas distribution plate provided in the first aspect of the present application comprises the following steps:
[0050] (1) heat treating a metal blank, and then performing cutting treatment to obtain a gas distribution plate blank;
[0051] Wherein, the temperature of the heat treatment is 325-335℃, and the holding time is 117-123min; the rotating speed in the cutting treatment is 450-550r / min, the turning speed is 20-30mm / min, and the processing allowance is 0.05-0.1mm;
[0052] The flatness of the gas distribution plate blank is ≤0.02mm, and the parallelism is ≤0.02mm;
[0053] (2) opening distribution holes on the gas distribution plate blank of step (1), and then performing mechanical processing after being fixed by a full-circle clamp to obtain the gas distribution plate;
[0054] The full-circle clamp comprises a fixed disc; a fixed hole and a fixed column corresponding to the distribution hole of the gas distribution disc are arranged on the surface of the fixed disc in the outward direction from the center of the fixed disc; the outer diameter of the fixed column is the same as the inner diameter of the distribution hole of the gas distribution disc, the height of the fixed column is 1.1-1.4 mm, and the material comprises magnesium-silicon aluminum alloy; the number of the fixed holes (threaded holes) is 4-8, the diameter is 2.5-3.5 mm, and the depth is 8-12 mm;
[0055] The mechanical processing comprises rough turning and fine turning in sequence;
[0056] The rotation speed in the rough turning is 250-350 r / min, the turning speed is 0.07-0.10 mm / r, and the processing allowance is 0.04-0.08 mm;
[0057] The rotation speed in the fine turning is 380-420 r / min, and the turning speed is 0.04-0.06 mm / r.
[0058] In the second aspect, the application provides a gas distribution disc obtained by the processing method provided in the first aspect.
[0059] The thickness of the thinnest position in the gas distribution disc is 1.5 mm.
[0060] The numerical range provided in the application not only comprises the point values exemplified above, but also comprises any point value between the numerical ranges exemplified above, and the specific point values included in the range are not listed again due to the limited length and the consideration of simplicity.
[0061] Compared with the prior art, the application has the following beneficial effects:
[0062] (1) The processing method of the gas distribution disc provided in the application is simple, and the full-circle clamp designed independently in combination with the step-by-step processing can guarantee that the gas distribution disc meets the processing requirements of flatness and parallelism, and can stably produce the gas distribution disc meeting the use requirements;
[0063] (2) The gas distribution disc obtained by the processing method provided in the application has a smooth surface and no chatter marks;
[0064] (3) The full-circle clamp provided in the application has a simple structure and is easy to operate and produce. BRIEF DESCRIPTION OF DRAWINGS
[0065] Figure 1 The structure diagram of the full-circle clamp provided for the first embodiment of the application is shown.
[0066] Wherein, 1 is a fixed disc, 2 is a fixed column, and 3 is a fixed hole. DETAILED DESCRIPTION
[0067] The technical solution of the present invention is further described below by way of specific embodiments. It should be understood by those skilled in the art that the embodiments are merely to help understand the present invention and should not be regarded as specific limitations of the present invention.
[0068] Example 1
[0069] This embodiment provides a method for processing a gas distribution plate, the method comprising the following steps:
[0070] (1) heat treating the metal blank and then cutting it to obtain a gas distribution plate blank;
[0071] The heat treatment temperature is 330° C., the holding time is 120 min; the rotation speed in the cutting process is 500 r / min, the turning speed is 20 mm / min, and the machining allowance is 0.05 mm;
[0072] The flatness of the gas distribution plate blank is 0.015 mm and the parallelism is 0.018 mm;
[0073] (2) opening distribution holes in the gas distribution plate blank of step (1), fixing it with a full-circle clamp, and then machining it to obtain the gas distribution plate;
[0074] like Figure 1 As shown, the full-circle fixture includes a fixed plate; from the center of the fixed plate outward, the surface of the fixed plate is provided with fixing holes and fixing posts corresponding one-to-one to the distribution holes of the gas distribution plate; the outer diameter of the fixing posts is the same as the inner diameter of the distribution holes of the gas distribution plate, the height of the fixing posts is 1.2 mm, and the material includes a magnesium-silicon aluminum alloy; the number of the fixing holes (threaded holes) is 6, the diameter is 3 mm, and the depth is 10 mm;
[0075] The machining includes rough turning and finish turning performed sequentially;
[0076] The rotation speed in the rough turning process is 300 r / min, the turning speed is 0.08 mm / r, and the machining allowance is 0.05 mm;
[0077] The rotation speed in the fine turning is 400 r / min and the turning speed is 0.05 mm / r.
[0078] Example 2
[0079] This embodiment provides a method for processing a gas distribution plate, the method comprising the following steps:
[0080] (1) heat treating the metal blank and then cutting it to obtain a gas distribution plate blank;
[0081] The temperature of the heat treatment is 325 DEG C, the holding time is 123 min; the rotating speed in the cutting treatment is 450 r / min, the turning speed is 25 mm / min, and the machining allowance is 0.08 mm;
[0082] The flatness of the gas distribution plate blank is 0.019 mm, and the parallelism is 0.02 mm;
[0083] The step (1) is to heat treat a metal blank, and then perform cutting treatment to obtain a gas distribution plate blank.
[0084] The full-circle clamp comprises a fixed disc; a fixed hole and a fixed column corresponding to the distribution hole of the gas distribution plate are arranged on the surface of the fixed disc in the outward direction from the center of the fixed disc; the outer diameter of the fixed column is the same as the inner diameter of the distribution hole of the gas distribution plate, the height of the fixed column is 1.1 mm, and the material comprises magnesium-silicon aluminum alloy; the number of the fixed holes (threaded holes) is 4, the diameter is 3.5 mm, and the depth is 12 mm.
[0085] The mechanical processing comprises rough turning and finish turning performed in sequence.
[0086] The rotating speed in the rough turning is 250 r / min, the turning speed is 0.10 mm / r, and the machining allowance is 0.04 mm.
[0087] The rotating speed in the finish turning is 380 r / min, and the turning speed is 0.06 mm / r.
[0088] Embodiment 3
[0089] The embodiment provides a processing method of a gas distribution plate, and the processing method comprises the following steps:
[0090] The step (1) is to heat treat a metal blank, and then perform cutting treatment to obtain a gas distribution plate blank.
[0091] The temperature of the heat treatment is 335 DEG C, the holding time is 117 min; the rotating speed in the cutting treatment is 550 r / min, the turning speed is 30 mm / min, and the machining allowance is 0.1 mm.
[0092] The flatness of the gas distribution plate blank is 0.02 mm, and the parallelism is 0.015 mm.
[0093] The step (1) is to heat treat a metal blank, and then perform cutting treatment to obtain a gas distribution plate blank.
[0094] The full-circle clamp comprises a fixed disc; the surface of the fixed disc is provided with fixed holes and fixed columns corresponding to the distribution holes of the gas distribution disc in the outward direction from the center of the fixed disc; the outer diameter of the fixed column is the same as the inner diameter of the distribution hole of the gas distribution disc, the height of the fixed column is 1.4mm, and the material comprises magnesium-silicon aluminum alloy; the number of the fixed holes (threaded holes) is 8, the diameter is 2.5mm, and the depth is 8mm;
[0095] The mechanical processing comprises rough turning and fine turning in sequence;
[0096] The rotating speed in the rough turning is 350r / min, the turning speed is 0.07mm / r, and the processing allowance is 0.08mm;
[0097] The rotating speed in the fine turning is 420r / min, and the turning speed is 0.04mm / r.
[0098] Example 4
[0099] The embodiment provides a processing method of a gas distribution disc, and the difference between the processing method and the embodiment 1 is only that:
[0100] In the embodiment, the outer diameter of the fixed column in the full-circle clamp in the step (2) is adjusted to be smaller than the inner diameter of the distribution hole by 0.05mm.
[0101] Example 5
[0102] The embodiment provides a processing method of a gas distribution disc, and the difference between the processing method and the embodiment 1 is only that:
[0103] In the embodiment, the number of the fixed holes in the full-circle clamp in the step (2) is adjusted to be 1 / 2 of the number of the distribution holes.
[0104] Example 6
[0105] The embodiment provides a processing method of a gas distribution disc, and the difference between the processing method and the embodiment 1 is only that:
[0106] In the embodiment, the setting of the fixed holes in the full-circle clamp in the step (2) is omitted.
[0107] Example 7
[0108] The embodiment provides a processing method of a gas distribution disc, and the difference between the processing method and the embodiment 1 is only that:
[0109] In the embodiment, the rotating speed of the rough turning in the step (2) is adjusted to be 200r / min, and the turning speed is adjusted to be 0.06mm / r.
[0110] Example 8
[0111] The embodiment provides a processing method of a gas distribution plate, and only differs from the embodiment 1 in that:
[0112] In the embodiment, the rotating speed of the rough turning in the step (2) is adjusted to 400 r / min, and the turning speed is adjusted to 0.1 mm / r.
[0113] Embodiment 9
[0114] The embodiment provides a processing method of a gas distribution plate, and only differs from the embodiment 1 in that:
[0115] In the embodiment, the rotating speed of the fine turning in the step (2) is adjusted to 320 r / min, and the turning speed is adjusted to 0.02 mm / r.
[0116] Embodiment 10
[0117] The embodiment provides a processing method of a gas distribution plate, and only differs from the embodiment 1 in that:
[0118] In the embodiment, the rotating speed of the fine turning in the step (2) is adjusted to 480 r / min, and the turning speed is adjusted to 0.08 mm / r.
[0119] Embodiment 11
[0120] The embodiment provides a processing method of a gas distribution plate, and only differs from the embodiment 1 in that:
[0121] In the embodiment, the process of the rough turning in the step (2) is omitted.
[0122] Embodiment 12
[0123] The embodiment provides a processing method of a gas distribution plate, and only differs from the embodiment 1 in that:
[0124] In the embodiment, the flatness of the gas distribution plate blank in the step (1) is adjusted to 0.03 mm, and the parallelism is adjusted to 0.024 mm.
[0125] Comparative Example 1
[0126] The comparative example provides a processing method of a gas distribution plate, and only differs from the embodiment 1 in that:
[0127] In the comparative example, the full-circle clamp in the step (2) is adjusted to a tripod clamp, that is, three pressurizing devices are uniformly arranged on the outer periphery of the gas distribution plate blank, and a centripetal force is applied to realize the locking of the blank.
[0128] Comparative Example 2
[0129] The comparative example provides a processing method of a gas distribution plate, which is only different from that of example 1 in that:
[0130] The comparative example omits the heat treatment described in step (1).
[0131] Performance detection:
[0132] The gas distribution plates provided by the above examples and comparative examples are subjected to performance detection, including flatness detection, parallelism detection and surface detection, and the results are shown in Table 1.
[0133] Table 1
[0134]
[0135]
[0136] The following points can be known from Table 1:
[0137] According to the comprehensive analysis of examples 1-3, it can be known that the processing method provided by the present application can ensure that the surface of the gas distribution plate is smooth and free of chatter marks; and ensure that the gas distribution plate meets the processing requirements of flatness and parallelism, and can stably produce a gas distribution plate meeting the use requirements.
[0138] According to the comprehensive analysis of example 1, examples 4-6 and comparative example 1, it can be known that the full-circle clamp provided by the present application is one of the key factors to ensure that the gas distribution plate has excellent performance; if the structural characteristics of the full-circle clamp are adjusted, the flatness and / or parallelism of the obtained gas distribution plate cannot meet the processing requirements, resulting in waste of resources.
[0139] According to the comprehensive analysis of example 1, examples 7-11 and comparative example 1, it can be known that the processing method provided by the present application is one of the key factors affecting the physical properties of the product; more specifically, omitting the rough turning process or the heat treatment process will cause the gas distribution plate to deform after fine turning, and the flatness is not up to standard.
[0140] In summary, the processing method of the gas distribution plate provided by the present application is simple, and combined with step-by-step processing and a self-designed full-circle clamp, it can ensure that the surface of the gas distribution plate is smooth and free of chatter marks; and ensure that the gas distribution plate meets the processing requirements of flatness and parallelism, and can stably produce a gas distribution plate meeting the use requirements.
[0141] The applicant declares that the above is only a specific embodiment of the present application, but the protection scope of the present application is not limited thereto. It should be understood by those skilled in the art that any changes or replacements within the technical scope disclosed by the present application can be easily thought of by those skilled in the art, and all fall within the protection scope and disclosure scope of the present application.
Claims
1. A method for processing a gas distribution plate, characterized in that: The processing method comprises the following steps: (1) heat treating the metal blank and then cutting it to obtain a gas distribution plate blank; (2) The gas distribution plate blank of step (1) is provided with distribution holes, fixed with a full-circle clamp, and then machined to obtain the gas distribution plate.
2. The method for processing a gas distribution plate according to claim 1, characterized in that: The temperature of the heat treatment in step (1) is 325-335°C; Preferably, the holding time of the heat treatment in step (1) is 117 to 123 minutes.
3. The method for processing a gas distribution plate according to claim 1 or 2, characterized in that: The cutting process in step (1) includes computer numerical control machine tool processing; Preferably, the rotation speed in the cutting process is 450-550 r / min; Preferably, the turning speed of the cutting process is 20 to 30 mm / min; Preferably, the machining allowance of the cutting process is 0.05 to 0.1 mm; Preferably, cutting fluid is used for cooling during the cutting process in step (1).
4. The method for processing a gas distribution plate according to any one of claims 1 to 3, characterized in that: The flatness of the gas distribution plate blank in step (1) is ≤0.02 mm; Preferably, the parallelism of the gas distribution plate blank in step (1) is ≤0.02 mm.
5. The method for processing a gas distribution plate according to any one of claims 1 to 4, characterized in that: The full-circle fixture in step (2) includes a fixed plate; Preferably, according to the direction from the center of the fixed plate to the outside, the surface of the fixed plate is provided with fixing holes and fixing columns corresponding to the distribution holes of the gas distribution plate one by one; Preferably, the outer diameter of the fixing column is the same as the inner diameter of the distribution hole of the gas distribution plate; Preferably, the height of the fixing column is 1.1 to 1.4 mm; Preferably, the material of the fixing column includes magnesium-silicon aluminum alloy.
6. The method for processing a gas distribution plate according to claim 5, characterized in that: The number of the fixing holes is 4 to 8; Preferably, the fixing hole comprises a threaded hole with a diameter of 2.5 to 3.5 mm; Preferably, the depth of the fixing hole is 8-12 mm.
7. The method for processing a gas distribution plate according to any one of claims 1 to 6, characterized in that: The mechanical processing in step (2) includes computer numerical control machine processing; Preferably, the machining comprises rough turning and finish turning performed sequentially; Preferably, cutting fluid is used for cooling during the machining.
8. The method for processing a gas distribution plate according to claim 7, characterized in that: The speed of the rough turning is 250-350 r / min; Preferably, the turning speed of the rough turning is 0.07-0.10 mm / r; Preferably, the rough turning has a machining allowance of 0.04 to 0.08 mm.
9. The method for processing a gas distribution plate according to claim 7, characterized in that: The rotation speed during the finishing process is 380-420 r / min; Preferably, the turning speed of the fine turning is 0.04-0.06 mm / r.
10. A gas distribution plate, characterized in that: The gas distribution plate is obtained by the processing method according to any one of claims 1 to 9.