Physical quantity detection device and method for manufacturing physical quantity detection device

Abstract

A physical quantity detection device and a method of manufacturing the physical quantity detection device. A physical quantity detection device includes a physical quantity detection element, a support substrate, and a circuit device. The physical quantity detection element includes: a first detection arm having a first detection electrode and a second detection electrode; and a second detection arm having a third detection electrode and a fourth detection electrode. A detection circuit of the circuit device includes: a first amplification circuit to which a first detection signal and a fourth detection signal from a first detection electrode and a fourth detection electrode are input; and a second amplification circuit to which a third detection signal and a second detection signal from the third detection electrode and the second detection electrode are input. The support substrate includes a first wiring, a second wiring, a third wiring, and a fourth wiring connected to the first detection electrode, the second detection electrode, the third detection electrode, and the fourth detection electrode. In the support substrate, the second wiring is connected to the third wiring during a grounding operation during a second wiring inspection, and the fourth wiring is connected to the first wiring during a grounding operation during a fourth wiring inspection.

Description

Technical Field

[0001] The present invention relates to a physical quantity detection device and a method for manufacturing the physical quantity detection device. Background Art

[0002] Patent Document 1 discloses a physical quantity detection device that does not ground one of the positive and negative electrodes of a detection arm but inputs detection signals from both the positive and negative electrodes into a detection circuit, thereby improving detection sensitivity.

[0003] Patent Document 1: Japanese Patent Application Laid-Open No. 2015-184124

[0004] However, in the physical quantity detection device of Patent Document 1, the first detection electrode of the first detection wrist is electrically connected to the fourth detection electrode of the second detection wrist in order to input the detection signal from the first detection electrode of the first detection wrist and the detection signal from the fourth detection electrode of the second detection wrist into the first amplifier circuit. Furthermore, the second detection electrode of the first detection wrist is electrically connected to the third detection electrode of the second detection wrist in order to input the detection signal from the second detection electrode of the first detection wrist and the detection signal from the third detection electrode of the second detection wrist into the second amplifier circuit. Therefore, since it is unknown which of the first and second detection wrists is generating the useless signal, it is impossible to independently measure the vibration characteristics of the first and second detection wrists. Consequently, proper balance tuning cannot be achieved, making it difficult to improve the performance of the physical quantity detection device. Summary of the Invention

[0005] One scheme disclosed herein is related to a physical quantity detection device, which includes: a physical quantity detection element having multiple detection arms, multiple drive arms and a base; a supporting substrate, supporting the physical quantity detection element at the base; and a circuit device having a detection circuit for detecting physical quantities based on multiple detection signals from the multiple detection arms of the physical quantity detection element, the physical quantity detection element as the multiple detection arms including: a first detection arm having a first detection electrode and a second detection electrode, extending from the base; and a second detection arm having a third detection electrode and a fourth detection electrode, extending from the base in a direction opposite to the first detection arm, the detection circuit of the circuit device includes an amplifier circuit, and the amplifier circuit operates The first detection signal from the first detection electrode and the fourth detection signal from the fourth detection electrode are input to the first input node, and the third detection signal from the third detection electrode and the second detection signal from the second detection electrode are input to the second input node, and the supporting substrate includes: a first wiring, one end of which is connected to the first detection electrode; a second wiring, one end of which is connected to the second detection electrode; a third wiring, one end of which is connected to the third detection electrode; and a fourth wiring, one end of which is connected to the fourth detection electrode, the second wiring is grounded in the supporting substrate during inspection and connected to the third wiring during operation, and the fourth wiring is grounded in the supporting substrate during inspection and connected to the first wiring during operation.

[0006] Another scheme of the present disclosure is related to a manufacturing method of a physical quantity detection device, the physical quantity detection device comprising: a physical quantity detection element having a plurality of detection arms, a plurality of drive arms and a base; a supporting substrate, the base supporting the physical quantity detection element; and a circuit device having a detection circuit for detecting physical quantities based on a plurality of detection signals from the plurality of detection arms of the physical quantity detection element. In the manufacturing method of the physical quantity detection device, the physical quantity detection element as the plurality of detection arms comprises: a first detection arm having a first detection electrode and a second detection electrode, extending from the base; and a second detection arm having a third detection electrode and a fourth detection electrode, extending from the base in a direction opposite to the first detection arm. The detection circuit of the circuit device comprises an amplifier circuit, and when the amplifier circuit is in operation, a first detection signal from the first detection electrode and a fourth detection electrode from the fourth detection electrode are detected. A signal is input to a first input node, a third detection signal from the third detection electrode and a second detection signal from the second detection electrode are input to a second input node, the supporting substrate includes: a first wiring, one end of which is connected to the first detection electrode; a second wiring, one end of which is connected to the second detection electrode; a third wiring, one end of which is connected to the third detection electrode; and a fourth wiring, one end of which is connected to the fourth detection electrode. The manufacturing method of the physical quantity detection device includes: a first step of preparing the physical quantity detection element and the supporting substrate; a second step of assembling the physical quantity detection element on the supporting substrate; a third step of adjusting at least one driving arm of the multiple driving arms; a fourth step of cutting off the connection between the second wiring and the ground and the connection between the fourth wiring and the ground; and a fifth step of connecting the second wiring to the third wiring and connecting the fourth wiring to the first wiring. BRIEF DESCRIPTION OF THE DRAWINGS

[0007] Figure 1 It is a cross-sectional view showing a configuration example of the physical quantity detection device according to this embodiment.

[0008] Figure 2 This diagram explains the operation of a physical quantity detection element.

[0009] Figure 3 This is an example of the configuration of a circuit device.

[0010] Figure 4 This is an explanatory diagram of the amplifier circuit.

[0011] Figure 5 It is a signal waveform diagram explaining the operation of the amplifier circuit.

[0012] Figure 6 This is an explanatory diagram of the amplifier circuit.

[0013] Figure 7This is a top view of the physical quantity detection element.

[0014] Figure 8 This is a plan view of the support substrate viewed from the upper surface side.

[0015] Figure 9 This is a plan view of the support substrate viewed from the upper surface side.

[0016] Figure 10 This is a plan view of the support substrate viewed from the lower surface side.

[0017] Figure 11 This is a diagram schematically showing wiring connections during inspection.

[0018] Figure 12 This is a diagram schematically showing wiring connections during operation.

[0019] Figure 13 This is a plan view of the support substrate of the second wiring example as viewed from the upper surface side.

[0020] Figure 14 This is a plan view of the support substrate of the second wiring example as viewed from the bottom surface side.

[0021] Figure 15 It is a diagram schematically showing the wiring connection of the second wiring example during inspection.

[0022] Figure 16 It is a diagram schematically showing the wiring connection of the second wiring example during operation.

[0023] Figure 17 This is an illustration of the cutting marks.

[0024] Figure 18 This diagram illustrates the arrangement relationship between cutting traces, pads, physical quantity detection elements, and circuit devices.

[0025] Figure 19 This is a flowchart illustrating a method for manufacturing a physical quantity detection device.

[0026] Description of Reference Numerals

[0027] 1…physical quantity detection device; 2…base; 3…cover; 4…package; 5A, 5B…joining member; 6A, 6B, 7A, 7B…internal terminal; 8A, 8B…external terminal; 9, 9A, 9B, 9C…recess; 10…physical quantity detection element; 11…vibrating plate; 12P…vibrating plate; 12Q…vibrating plate; 13…driving electrode; 14…driving electrode; 15A, 15B, 16A, 16B…detecting electrode; 18P, 18Q, 18R, 18S…driving arm; 19P, 19Q…detecting arm; 20…circuit device; 21…base; 22P, 22Q…connecting arm; 23, 24, 25A, 25B, 26A, 26B… Terminals; 27P, 27Q, 27R, 27S, 28P, 28Q…weight portion; 30…support substrate; 40…frame portion; 41, 42…support portion; 43…metal film; 51, 52…connecting portion; 70…element mounting portion; 71, 72, 73…beam; 74…beam portion; 100…drive circuit; 102…amplifier circuit; 104…gain control circuit; 106…drive signal output circuit; 108…synchronization signal output circuit; 110…detection circuit; 120…amplifier circuit; 121…first amplifier circuit; 122…second amplifier circuit; 124…differential amplifier circuit; 126…AC amplifier circuit; 130…synchronous detection circuit; 132 …filter circuit; 134…A / D conversion circuit; 150…processing circuit; AS1…first detection arm; AS2…second detection arm; B1, B2…joining member; BW, BW1, BW2…joining wire; CSG1, CSG2…connecting wire; CT1, CT2…cutting trace; DG…feedback signal; DS…drive signal; EDG, EDS…drive electrode; ES1A…first detection electrode; ES1B…second detection electrode; ES2A…third detection electrode; ES2B…fourth detection electrode; FDG, FDS, FS1A, FS1B, FS2A, FS2B…terminals; LDG, LDS…wiring; LG1…first ground wiring ; LG2…second ground wiring; LGND…wiring; LS1A…first wiring; LS1B…second wiring; LS2A…third wiring; LS2B…fourth wiring; N1…first input node; N2…second input node; PS1A, PS1B, PS2A, PS2B…solder pad; S…accommodation space; S1A…first detection signal; S1B…second detection signal; S2A…third detection signal; S2B…fourth detection signal; SD1, SD2, SD3, SD4…inner periphery; SF1, SF2…surface; TDG, TDS, TGND, TS1A…terminal; TS1B…terminal; TS2A…terminal; TS2B…terminal. DETAILED DESCRIPTION

[0028] The present embodiment will be described below. The present embodiment described below does not unduly limit the contents of the claims. Furthermore, not all of the configurations described in this embodiment are essential components.

[0029] 1. Physical quantity detection device

[0030] Figure 1 : is a cross-sectional view showing a configuration example of the physical quantity detection device 1 according to this embodiment. Figure 1 As shown, the physical quantity detection device 1 of this embodiment includes a physical quantity detection element 10, a support substrate 30 supporting the physical quantity detection element 10, and a circuit device 20. In addition, the physical quantity detection device 1 can include a package 4 that accommodates the physical quantity detection element 10, the support substrate 30, and the circuit device 20. In addition, the physical quantity detection device 1 is not limited to Figure 1 The structure of the present invention can be implemented by omitting some of the components of the structure or adding other components. Figure 1 As shown, directions DR1 and DR2 are perpendicular to each other, and a direction perpendicular to DR1 and DR2 is DR3. Directions DR1, DR2, and DR3 are respectively referred to as the first direction, the second direction, and the third direction. The sides indicated by the arrows in directions DR1, DR2, and DR3 are also referred to as the positive side, and the opposite sides are also referred to as the negative side. Figure 1 It is a side view when the physical quantity detection device 1 is viewed from the side in the direction DR2 .

[0031] The physical quantity detection element 10 is an element for detecting a physical quantity, and can also be called a physical quantity converter or a vibration element. The physical quantity detection element has, for example, a vibration plate, and detects the physical quantity by using the vibration of the vibration plate. For example, when the physical quantity detection element is a gyro sensor element, angular velocity is detected as the physical quantity. As a gyro sensor element, there are, for example, sensor elements having a piezoelectric vibration plate formed by a thin plate of a piezoelectric material such as quartz. Specifically, the gyro sensor element is a sensor element having a vibration plate such as a double T-shaped, tuning fork-shaped or H-shaped formed by a quartz substrate such as a Z-cut. Alternatively, a MEMS (Micro Electro Mechanical Systems) type sensor element can also be used as a gyro sensor element. In addition, the physical quantity detected by the physical quantity detection element can also be a physical quantity other than angular velocity, such as angular acceleration, angle, acceleration, velocity, movement distance or pressure.

[0032] Package 4 includes a base 2 and a lid 3. Specifically, package 4 comprises: a base 2 having an upwardly open recess 9; and a lid 3 bonded to the upper surface of base 2 to form a housing space S between the base 2 and the lid 3. Base 2 and lid 3 are bonded, for example, by bonding members 5A and 5B. For example, base 2 can be made of a ceramic such as alumina, and lid 3 can be made of a metal such as Kovar. However, the materials of base 2 and lid 3 are not limited to these.

[0033] On the inner side of the package 4, a storage space S is formed by the opening portion of the base 2, and the physical quantity detection element 10, the supporting substrate 30, and the circuit device 20 are accommodated in the storage space S. The storage space S, which serves as the internal space, is airtight and is in a reduced pressure state, preferably a state closer to a vacuum. As a result, the viscous resistance is reduced and the vibration characteristics of the physical quantity detection element 10 are improved. However, the atmosphere of the storage space S is not particularly limited, and for example, it can also be an atmospheric pressure state or a pressurized state. In addition, the package 4 only needs to have at least the base 2, and can also be constructed without the cover 3.

[0034] The recess 9 of the base 2 is composed of multiple recesses. For example, the recess 9 includes: a recess 9A, which opens on the top surface of the base 2; a recess 9B, which opens on the bottom surface of recess 9A and has a smaller opening width than recess 9A; and a recess 9C, which opens on the bottom surface of recess 9B and has a smaller opening width than recess 9B. Furthermore, the support substrate 30 is fixed to the bottom surface of recess 9A, supporting the physical quantity detection element 10. The bottom surface of recess 9A forms a step. Furthermore, the circuit device 20 is fixed to the bottom surface of recess 9C.

[0035] And, as Figure 1 As shown, in the housing space S, the physical quantity detection element 10, the support substrate 30, and the circuit device 20 are arranged overlapping when viewed from above. For example, the physical quantity detection element 10, the support substrate 30, and the circuit device 20 are arranged along the direction DR3. For example, the support substrate 30 has a first surface SF1 and a second surface SF2 as its main surfaces. Furthermore, the physical quantity detection element 10 is arranged on the surface SF1 side of the support substrate 30. Furthermore, the circuit device 20 is arranged on the surface SF2 of the support substrate 30.

[0036] Furthermore, the arrangement of the physical quantity detection element 10, the support substrate 30, and the circuit device 20 is not limited to Figure 1 For example, in Figure 1 In the embodiment, the support substrate 30 is arranged between the physical quantity detection element 10 and the circuit device 20, but the physical quantity detection element 10 may be arranged between the support substrate 30 and the circuit device 20. Figure 1In the figure, the physical quantity detection element 10, the supporting substrate 30, and the circuit device 20 are arranged in this order from the upper surface side of the package 4, but they can also be arranged in the order of the circuit device 20, the supporting substrate 30, and the physical quantity detection element 10 from the upper surface side of the package 4.

[0037] In addition, if Figure 1 As shown, a plurality of internal terminals 6A and 6B are arranged on the stepped portion of the bottom surface of the recess 9A of the base 2. In addition, a plurality of internal terminals 7A and 7B are also arranged on the stepped portion of the bottom surface of the recess 9B of the base 2. In addition, a plurality of external terminals 8A and 8B are arranged on the lower surface of the base 2. The internal terminals 6A and 6B, the internal terminals 7A and 7B, and the external terminals 8A and 8B are electrically connected via internal wiring (not shown). In addition, the internal terminals 6A and 6B are electrically connected to the physical quantity detection element 10 via conductive bonding members B1 and B2 and the support substrate 30. In addition, the internal terminals 7A and 7B are electrically connected to the circuit device 20 via bonding wires BW.

[0038] Conductive bonding members B1 and B2 are members that have both electrical conductivity and bonding properties. There are no particular limitations on the conductive bonding members B1 and B2, and conductive adhesives such as polyimide, epoxy, silicone, or acrylic adhesives dispersed with conductive fillers such as silver fillers, or various metal bumps such as gold bumps, silver bumps, copper bumps, or solder bumps can be used.

[0039] For example, in the present embodiment, a conductive adhesive, specifically a thermosetting adhesive, is used as the bonding member B1 between the support substrate 30 and the base 2 of the package 4. In addition, a metal bump is used as the bonding member B2 between the support substrate 30 and the physical quantity detection element 10. By using a conductive adhesive as the bonding member B1 that bonds the support substrate 30 and the base 2, which are made of different types of materials, the thermal stress generated by the difference in thermal expansion coefficient between them can be absorbed and alleviated by the bonding member B1. On the other hand, since the support substrate 30 and the physical quantity detection element 10 are bonded by a plurality of bonding members B2 arranged in a relatively narrow area, by using a metal bump as the bonding member B2, wetting and spreading like a conductive adhesive can be suppressed, and contact between the bonding members B2 can be effectively suppressed.

[0040] Figure 2 is a diagram illustrating an example of the operation of the physical quantity detection element 10. The following description primarily uses the case where the physical quantity detection element 10 is a gyro sensor element, specifically a double-T-shaped gyro sensor element. However, as described above, the physical quantity detection element 10 may also be a gyro sensor element other than a double-T-shaped gyro sensor element, or a physical quantity detection element other than a gyro sensor element.

[0041] For example, when the Z axis is the thickness direction of the physical quantity detection element 10, the physical quantity detection element 10 as a gyro sensor element detects the angular velocity ω around the Z axis. The X axis and the Y axis are coordinate axes orthogonal to the Z axis, and the X axis and the Y axis are orthogonal to each other. Figure 2 The Z axis is along Figure 1 The physical quantity detection element 10 is arranged so as to extend in the direction DR3 and can detect the angular velocity ω with the axis along the direction DR3 as the detection axis.

[0042] like Figure 2 As shown, the physical quantity detection device 1 includes a physical quantity detection element 10 and a circuit device 20. The circuit device 20 is, for example, an integrated circuit device known as an IC (Integrated Circuit). For example, the circuit device 20 is an IC manufactured using a semiconductor process and is a semiconductor chip having circuit elements formed on a semiconductor substrate. Furthermore, the circuit device 20 includes a drive circuit 100, a detection circuit 110, and a processing circuit 150. Furthermore, variations in configurations in which some of these circuits are omitted are also possible.

[0043] The physical quantity detection element 10 includes drive arms 18P, 18Q, 18R, and 18S, detection arms 19P and 19Q, a base 21, and connecting arms 22P and 22Q. The detection arms 19P and 19Q extend in the +Y-axis and -Y-axis directions relative to the rectangular base 21. Furthermore, the connecting arms 22P and 22Q extend in the +X-axis and -X-axis directions relative to the base 21. Furthermore, the drive arms 18P and 18Q extend from their front ends relative to the connecting arm 22P in the +Y-axis and -Y-axis directions, while the drive arms 18R and 18S extend from their front ends relative to the connecting arm 22Q in the +Y-axis and -Y-axis directions.

[0044] In addition, the physical quantity detection element 10 has weights 27P, 27Q, 27R, 27S, 28P, and 28Q. These weights are also called hammer heads. The weights 27P and 27Q are respectively provided on the front end sides of the drive arms 18P and 18Q, and the weights 27R and 27S are respectively provided on the front end sides of the drive arms 18R and 18S. In addition, the weights 28P and 28Q are respectively provided on the front end sides of the detection arms 19P and 19Q. Furthermore, the weights 27P, 27Q, 27R, and 27S provided on the drive arms 18P, 18Q, 18R, and 18S are balance adjustment parts used to adjust the balance of the vibration of the physical quantity detection element 10. For example, when manufacturing the physical quantity detection device 1, the balance of the vibration of the physical quantity detection element 10 is adjusted by cutting and trimming the metal of the weights 27P, 27Q, 27R, and 27S using a laser.

[0045] The vibrating plate of the physical quantity detection element 10 can be formed of, for example, a piezoelectric material such as quartz, lithium tantalate, or lithium niobate. Quartz is also preferably used as the constituent material of the vibrating plate. The X-axis, Y-axis, and Z-axis are also referred to as the electrical axis, mechanical axis, and optical axis of the quartz substrate, respectively. The quartz substrate is composed of, for example, a Z-cut quartz plate having a thickness in the Z-axis direction.

[0046] Drive electrodes 13 are formed on the top and bottom surfaces of the drive arms 18P and 18Q, and drive electrodes 14 are formed on the right and left sides of the drive arms 18P and 18Q. Drive electrodes 14 are formed on the top and bottom surfaces of the drive arms 18R and 18S, and drive electrodes 13 are formed on the right and left sides of the drive arms 18R and 18S. Furthermore, a drive signal DS from the drive circuit 100 is supplied to the drive electrodes 13, and a feedback signal DG from the drive electrodes 14 is input to the drive circuit 100.

[0047] Detection electrodes 15A are formed on the top and bottom surfaces of detection arm 19P, and detection electrodes 15B are formed on the right and left sides of detection arm 19P. Detection electrodes 16A are formed on the top and bottom surfaces of detection arm 19Q, and detection electrodes 16B are formed on the right and left sides of detection arm 19Q. Detection electrodes 15A, 15B, 16A, and 16B are the first, second, third, and fourth detection electrodes, respectively.

[0048] Furthermore, detection signals S1A, S1B, S2A, and S2B from detection electrodes 15A, 15B, 16A, and 16B are input to detection circuit 110. Specifically, detection circuit 110 includes a first amplifier circuit 121 and a second amplifier circuit 122. First amplifier circuit 121 and second amplifier circuit 122 are, for example, charge / voltage conversion circuits (Q / V conversion circuits), also known as charge amplifiers. Furthermore, detection signals S1A from detection electrodes 15A formed on the top and bottom surfaces of detection arm 19P and S2B from detection electrodes 16B formed on the right and left sides of detection arm 19Q are input to first amplifier circuit 121. Furthermore, detection signals S2A from detection electrodes 16A formed on the top and bottom surfaces of detection arm 19Q and S1B from detection electrodes 15B formed on the right and left sides of detection arm 19P are input to second amplifier circuit 122. Furthermore, the output signals of the first amplifier circuit 121 and the output signals of the second amplifier circuit 122 are differentially amplified by the differential amplifier circuit. For example, as described later, S1A and S2B are detection signals of the same phase. Furthermore, S2A and S1B are detection signals of the same phase, but are phase-shifted, for example, by 180 degrees from S1A and S2B, and thus have different polarities. This configuration allows for a doubled wiring pattern, essentially doubling the area of ​​the detection electrodes.

[0049] Furthermore, grooves (not shown) are provided on the top and bottom surfaces of the driving arms 18P, 18Q, 18R, 18S and the detecting arms 19P, 19Q to enhance the electric field effect between the electrodes. The grooves enable the generation of a relatively large charge with relatively small strain.

[0050] The base portion 21 is provided with driving terminals 23 and 24 and detection terminals 25A, 25B, 26A, and 26B. A driving signal DS from the driving circuit 100 is input to the driving terminal 23, and a feedback signal DG to the driving circuit 100 is output from the driving terminal 24. Detection signals S1A and S2B are output from the detection terminals 25A and 26B to the first amplifier circuit 121, while detection signals S2A and S1B are output from the detection terminals 26A and 25B to the second amplifier circuit 122.

[0051] The drive circuit 100 included in the circuit device 20 drives the physical quantity detection element 10. The drive circuit 100 drives the vibrating element of the physical quantity detection element 10 to vibrate by outputting a drive signal DS to the physical quantity detection element 10. The drive signal DS is, for example, a rectangular wave signal, but may also be a sinusoidal wave signal.

[0052] The detection circuit 110 detects a physical quantity based on the detection signals S1A, S1B, S2A, and S2B from the physical quantity detection element 10. Figure 2 Angular velocity is detected as a physical quantity. The detection signals S1A, S1B, S2A, and S2B are, for example, detection signals of physical quantities using the drive frequency of the drive signal DS as a carrier frequency. The detection circuit 110 detects the physical quantity (angular velocity) in the detection signals S1A, S1B, S2A, and S2B by performing synchronous detection on the detection signals S1A, S1B, S2A, and S2B using, for example, a synchronization signal, and outputs detection data.

[0053] The processing circuit 150 performs digital signal processing and other processing on the detection data from the detection circuit 110. The processing circuit 150 performs digital signal processing, including digital filtering, on the detection data from the detection circuit 110. The detection data subjected to digital filtering by the processing circuit 150 is then output as, for example, a final detection value of a physical quantity. The signal processing performed by the processing circuit 150 is not limited to digital filtering; for example, various signal processing such as temperature compensation and various correction processes can be performed.

[0054] Next, the detailed operation of the case where the physical quantity detection element 10 is a gyro sensor element will be described. When the drive signal DS is applied to the drive electrode 13 by the drive circuit 100, the drive arms 18P, 18Q, 18R, and 18S operate as follows by the inverse piezoelectric effect. Figure 2 The bending vibration is as shown by the arrow C1. For example, the vibration posture shown by the solid arrow and the vibration posture shown by the dotted arrow are repeated at a predetermined frequency. That is, the front ends of the driving arms 18P and 18R repeatedly approach and separate from each other, and the front ends of the driving arms 18Q and 18S also repeat the bending vibration of approaching and separating from each other. At this time, since the driving arms 18P and 18Q and the driving arms 18R and 18S vibrate line-symmetrically with respect to the X-axis passing through the center of gravity of the base 21, the base 21, the connecting arms 22P and 22Q, and the detection arms 19P and 19Q hardly vibrate.

[0055] In this state, when an angular velocity about the Z-axis is applied to the physical quantity detection element 10, the drive arms 18P, 18Q, 18R, and 18S vibrate due to the Coriolis force as indicated by arrow C2. Specifically, a Coriolis force in the direction of arrow C2, perpendicular to the direction of arrow C1 and the direction of the Z-axis, acts on the drive arms 18P, 18Q, 18R, and 18S, generating a vibration component in the direction of arrow C2. This vibration in the direction of arrow C2 is transmitted to the base 21 via the connecting arms 22P and 22Q, causing the detection arms 19P and 19Q to flexurally vibrate in the direction of arrow C3. The charge signals generated by the piezoelectric effect caused by the flexural vibration of the detection arms 19P and 19Q are input to the detection circuit 110 as detection signals S1A, S1B, S2A, and S2B, thereby detecting the angular velocity about the Z-axis.

[0056] For example, if the angular velocity of physical quantity detection element 10 about the Z axis is ω, its mass is m, and its vibration velocity is v, the Coriolis force is expressed as Fc = 2m·v·ω. Therefore, detection circuit 110 can determine the angular velocity ω about the Z axis by detecting the desired signal, which is a signal corresponding to the Coriolis force.

[0057] Figure 3 Detailed configuration examples of the circuit device 20 are shown in FIG. Figure 3 Various modifications may be made to the configuration, such as omitting some of the components or adding other components. Furthermore, the connection in this embodiment is an electrical connection. An electrical connection is a connection that allows electrical signals to be transmitted, and is a connection that can transmit information via electrical signals. The electrical connection may also be a connection via passive components, etc.

[0058] The physical quantity detection element 10 as a sensor element includes a driving vibration piece 11, detection vibration pieces 12P and 12Q, driving electrodes 13 and 14, and detection electrodes 15A, 15B, 16A, and 16B. Figure 2 The detection vibration piece 12P corresponds to the driving arms 18P, 18Q, 18R, and 18S. Figure 2 The detection arm 19P corresponds to the detection vibrating piece 12Q, and the detection vibrating piece 11, 12P, and 12Q correspond to the detection arm 19Q. The vibrating pieces 11, 12P, and 12Q are piezoelectric vibrating pieces formed of thin plates of piezoelectric material such as quartz, for example.

[0059] A drive signal DS from the drive circuit 100 is supplied to the drive electrode 13, causing the driving vibrating reed 11 to vibrate. The feedback signal DG generated by the vibration of the vibrating reed 11 is then input to the drive circuit 100 via the drive electrode 14. Furthermore, the vibration of the driving vibrating reed 11 causes the detection vibrating reeds 12P and 12Q to vibrate. Furthermore, the charge generated on the detection electrodes 15A and 16B by the vibration of the vibrating reeds 12P and 12Q is input to the first amplifier circuit 121 of the detection circuit 110 as the first detection signal S1A and the fourth detection signal S2B (the sum of S1A and S2B). Furthermore, the charge generated on the detection electrodes 16A and 15B by the vibration of the vibrating reeds 12P and 12Q is input to the second amplifier circuit 122 of the detection circuit 110 as the third detection signal S2A and the second detection signal S1B (the sum of S2A and S1B). The circuit device 20 detects physical quantities such as angular velocity based on these detection signals.

[0060] The driving circuit 100 includes an amplifier circuit 102 , a gain control circuit 104 , a driving signal output circuit 106 , and a synchronization signal output circuit 108 .

[0061] The amplifier circuit 102 amplifies the feedback signal DG from the physical quantity detection element 10. For example, the amplifier circuit 102, which is an I / V conversion circuit, converts the current feedback signal DG from the physical quantity detection element 10 into a voltage signal DV and outputs the voltage signal DV.

[0062] The gain control circuit 104 outputs a control voltage VC to the drive signal output circuit 106 to control the amplitude of the drive signal DS. For example, the gain control circuit 104, acting as an AGC circuit, automatically and variably adjusts the gain to maintain a constant amplitude of the feedback signal DG from the physical quantity detection element 10 in order to maintain constant sensor sensitivity. The gain control circuit 104 includes a full-wave rectifier circuit that performs full-wave rectification of the AC signal DV output by the amplifier circuit 102, and an integrator circuit that integrates the signal from the full-wave rectifier circuit. The gain control circuit 104 then outputs the control voltage VC obtained through the integration process to the drive signal output circuit 106.

[0063] The drive signal output circuit 106 outputs a drive signal DS based on the signal DV amplified by the amplifier circuit 102. The drive signal output circuit 106 outputs a rectangular wave drive signal DS, such that the control voltage VC from the gain control circuit 104 is a high-potential voltage, that is, a high-level voltage. Furthermore, the drive signal output circuit 106 can also implement a modified embodiment such as outputting a sinusoidal drive signal DS.

[0064] The synchronization signal output circuit 108 outputs a synchronization signal SYC. The synchronization signal SYC is a signal generated based on the drive signal DS. Specifically, the synchronization signal SYC is a signal corresponding to the drive signal DS, for example, a clock signal having the same frequency as the drive signal DS.

[0065] The detection circuit 110 includes an amplifier circuit 120, a synchronous detection circuit 130, a filter circuit 132, and an A / D converter circuit 134. The amplifier circuit 120 includes a first amplifier circuit 121, a second amplifier circuit 122, a differential amplifier circuit 124, and an AC amplifier circuit 126. The amplifier circuit 120 inputs the first detection signal S1A and the fourth detection signal S2B to a first input node N1, and inputs the third detection signal S2A and the second detection signal S1B to a second input node N2.

[0066] The first amplifier circuit 121 converts the sum of S1A and S2B, which are charge signals from the physical quantity detection element 10, into a voltage signal. The second amplifier circuit 122 converts the sum of S2A and S1B, which are charge signals from the physical quantity detection element 10, into a voltage signal. The first amplifier circuit 121 and the second amplifier circuit 122 are continuous charge-voltage conversion circuits with feedback resistors.

[0067] The differential amplifier circuit 124 performs differential amplification of the signals QA1 and QA2 from the first amplifier circuit 121 and the second amplifier circuit 122. Since the physical quantity signals contained in the signals QA1 and QA2 are differential signals, the signals are amplified by performing differential amplification. The AC amplifier circuit 126 amplifies the output signal QDF from the differential amplifier circuit 124 and outputs it as the output signal AQA from the amplifier circuit 120. The AC amplifier circuit 126 performs, for example, signal gain adjustment. Furthermore, in this embodiment, the input of the first amplifier circuit 121 is connected to the first input node N1, and the input of the second amplifier circuit 122 is connected to the second input node N2. However, the input of the differential amplifier circuit 124 can also be connected to the first input node N1 and the second input node N2. In other words, the charge signal from the physical quantity detection element 10 can be input to the differential amplifier circuit 124 without passing through the first amplifier circuit 121 and the second amplifier circuit 122.

[0068] The synchronous detection circuit 130 performs synchronous detection on the output signal AQA of the amplifier circuit 120 based on the synchronization signal SYC. This allows the physical quantity signal, which is a desired signal included in the output signal AQA, to be extracted and the physical quantity to be detected.

[0069] Filter circuit 132 performs filtering processing, such as low-pass filtering, on the output signal of synchronous detection circuit 130. Filter circuit 132 functions as a prefilter for the subsequent A / D converter circuit 134. Furthermore, filter circuit 132 also functions as a circuit that attenuates unnecessary signals that cannot be completely eliminated by synchronous detection. A / D converter circuit 134 performs A / D conversion on the analog output signal from filter circuit 132 and outputs digital detection data DQA.

[0070] The processing circuit 150 performs various digital signal processing on the detection data DQA of the physical quantity from the detection circuit 110. The processing circuit 150 performs temperature correction calculations based on the detection data DQA or temperature detection data. Furthermore, the processing circuit 150 performs temperature compensation processing on the detection data DQA based on the temperature correction value obtained through the temperature correction calculation. The processing circuit 150 then performs digital filtering processing, such as low-pass filtering or notch filtering, on the temperature-compensated detection data.

[0071] As described above, in this embodiment, the charge signals from not only detection electrodes 15A and 16A but also detection electrodes 15B and 16B are input through detection circuit 110 and amplified by first amplifier circuit 121 and second amplifier circuit 122. This increases the amount of charge input to detection circuit 110 when detecting the same physical quantity, such as angular velocity, thereby improving the detection sensitivity of the physical quantity. This improves the signal-to-noise ratio (S / N) in the detection of the physical quantity, enabling noise reduction.

[0072] 2. Amplifier circuit

[0073] Next, the amplifier circuit 120 of the detection circuit 110 of this embodiment will be described in detail. Figure 4 As shown, the amplifier circuit 120 includes a first amplifier circuit 121, a second amplifier circuit 122, and a differential amplifier circuit 124. In addition, the physical quantity detection element 10 includes a first detection arm AS1 and a second detection arm AS2. The first detection arm AS1 and the second detection arm AS2 are respectively connected to Figure 2 Corresponding to detection arms 19P and 19Q.

[0074] In addition, the first detection arm AS1 includes a first detection electrode ES1A and a second detection electrode ES1B. In addition, the second detection arm AS2 includes a third detection electrode ES2A and a fourth detection electrode ES2B. The first detection electrode ES1A and the second detection electrode ES1B are respectively connected to Figure 2 The third detection electrode ES2A and the fourth detection electrode ES2B correspond to the detection electrodes 15A and 15B. Figure 2 The first and third detection electrodes ES1A and ES2A correspond to the detection electrodes 16A and 16B. Although not particularly limited, the first and third detection electrodes ES1A and ES2A are electrodes formed on, for example, the top and bottom surfaces of the first and second detection arms AS1 and AS2. Furthermore, the second and fourth detection electrodes ES1B and ES2B are electrodes formed on, for example, the right and left sides of the first and second detection arms AS1 and AS2. However, the surfaces on which the detection electrodes are formed may be reversed.

[0075] Furthermore, the first detection signal S1A from the first detection electrode ES1A of the first detection arm AS1 and the fourth detection signal S2B from the fourth detection electrode ES2B of the second detection arm AS2 are input to the first amplification circuit 121. Furthermore, the third detection signal S2A from the third detection electrode ES2A of the second detection arm AS2 and the second detection signal S1B from the second detection electrode ES1B of the first detection arm AS1 are input to the second amplification circuit 122.

[0076] In addition, in this embodiment, in the records of S1A, S1B, S2A, and S2B, "1" and "2" respectively indicate the correspondence with the "first" and "second" of the first detection arm AS1 and the second detection arm AS2, and "A" and "B" respectively indicate the correspondence with the upper surface and lower surface, right side and left side of each detection arm.

[0077] Each amplifier circuit of the first amplifier circuit 121 and the second amplifier circuit 122 includes an operational amplifier, a feedback resistor, and a capacitor. For example, the non-inverting input terminal of the operational amplifier is set to analog GND, and the detection signal from the physical quantity detection element 10 is input to the inverting input terminal. The output of the operational amplifier is then fed back to the node at the inverting input terminal, which is the input of the operational amplifier, via the resistor and capacitor. With this configuration, each amplifier circuit operates as a Q / V conversion circuit that converts the detection signal, which is a charge signal, into a voltage signal. The signals QA1 and QA2 from the first amplifier circuit 121 and the second amplifier circuit 122 are then input to the differential amplifier circuit 124 for differential amplification. The differentially amplified output signal QDF is output from the differential amplifier circuit 124.

[0078] Figure 5 It is an explanation Figure 4 The signal waveform diagram of the operation of the amplifier circuit 120. Figure 5 As shown, S1A and S2B are in-phase signals. Therefore, S1A+S2B, the sum signal (addition signal) of S1A and S2B, has an amplitude approximately twice that of S1A and S2B. This sum signal S1A+S2B is input to the first amplifier circuit 121.

[0079] In addition, if Figure 5 As shown, S2A and S1B are in-phase signals. Therefore, S2A+S1B, the sum signal (addition signal) of S2A and S1B, has an amplitude approximately twice that of S2A and S1B. This sum signal S2A+S1B is input to the second amplifier circuit 122.

[0080] S1A and S2B are 180 degrees out of phase with S2A and S1B, and are signals with opposite polarities. For example, if S1A and S2B are a first polarity, which is either positive or negative, then S2A and S1B are a second polarity, which is the other of the two polarities.

[0081] For example, in the first detection arm AS1, when positive charge is generated on the first detection electrode ES1A, negative charge is generated on the second detection electrode ES1B. When negative charge is generated on the first detection electrode ES1A, positive charge is generated on the second detection electrode ES1B. Consequently, the first detection signal S1A from the first detection electrode ES1A and the second detection signal S1B from the second detection electrode ES1B become signals of opposite phases.

[0082] Similarly, in the second sensing arm AS2, when positive or negative charge is generated on the third sensing electrode ES2A, positive or negative charge is generated on the fourth sensing electrode ES2B. Consequently, the third detection signal S2A from the third sensing electrode ES2A and the fourth detection signal S2B from the fourth sensing electrode ES2B become signals of opposite phases.

[0083] And, as Figure 2As shown by the solid and dashed arrows in C3, when the Coriolis force bends the first detection arm AS1 (19P) toward the positive X-axis direction, the second detection arm AS2 (19Q) bends toward the negative X-axis direction. When the first detection arm AS1 bends toward the negative X-axis direction, the second detection arm AS2 bends toward the positive X-axis direction. Therefore, when a positive or negative charge is generated on the first detection electrode ES1A of the first detection arm AS1, a positive or negative charge is generated on the third detection electrode ES2A of the second detection arm AS2. Consequently, the first detection signal S1A from the first detection electrode ES1A and the third detection signal S2A from the third detection electrode ES2A become signals of opposite phases. Similarly, the second detection signal S1B from the second detection electrode ES1B and the fourth detection signal S2B from the fourth detection electrode ES2B become signals of opposite phases.

[0084] Therefore, if Figure 5 As shown, S1A and S2B become signals of the same phase, S2A and S1B become signals of the same phase, and S1A and S2B become signals of opposite phase to S2A and S1B.

[0085] In this way, Figure 4 In the amplifier circuit 120, the charge signal S1A from the first detection electrode ES1A is added to the charge signal S2B from the fourth detection electrode ES2B, resulting in a charge signal with double the amplitude, which is input to the first amplifier circuit 121. Furthermore, the charge signal S2A from the third detection electrode ES2A is added to the charge signal S1B from the second detection electrode ES1B, resulting in a charge signal with double the amplitude, which is input to the second amplifier circuit 122. Thus, the area of ​​the detection electrodes can be substantially doubled, thereby improving the detection sensitivity of the physical quantity detection device 1. In this embodiment, for convenience, this method of substantially doubling the area of ​​the detection electrodes is referred to as "double wiring."

[0086] For example Figure 6 1 is an explanatory diagram of an amplifier circuit 120 according to a comparative example. Figure 6 Comparative example with Figure 4 The difference is that in Figure 6 In the embodiment, the second detection electrode ES1B of the first detection arm AS1 and the fourth detection electrode ES2B of the second detection arm AS2 are grounded.

[0087] In this Figure 6In the configuration of the comparative example, the charge generated in the second detection electrode ES1B of the first detection arm AS1 and the charge generated in the fourth detection electrode ES2B of the second detection arm AS2 are not input to the first amplifier circuit 121 and the second amplifier circuit 122, but are discharged to GND. Therefore, the amplitude of the detection signal cannot be adjusted as shown in FIG. Figure 5 So set it to 2 times, Figure 4 Compared with the structure of , there is a disadvantage that the detection sensitivity is lower. On the other hand, as described later, Figure 4 The configuration has a problem in that balance tuning, which is the balance adjustment of the vibration of the physical quantity detection element 10 , cannot be achieved.

[0088] 3. Balanced tuning and 2x wiring

[0089] In the physical quantity detection device 1, due to manufacturing process variations and other factors, the vibration balance of each driving arm is poor in its initial state. This generates unwanted vibrations in the detection arms when the physical quantity detection element 10 is driven. Therefore, during balance tuning, the detection signal generated by this unwanted vibration is measured while trimming the metal overlay film of each driving arm using energy beams such as laser light to adjust the frequency and reduce the unwanted vibration. During balance tuning, the unwanted signals generated by the two detection arms are independently measured for each detection arm, and the measured values ​​are used to calculate the driving arm being processed or the amount of processing for that arm.

[0090] However, in Figure 4 In the structure, since the useless signals generated from the two detection arms are added and then input into the amplifier circuit, it is unknown from which detection arm the measured useless signal is generated, and there is a problem that it is impossible to calculate the driving arm to be processed and its processing amount.

[0091] For example, if no angular velocity is generated when vibrating the driving arm, the first detection arm AS1 and the second detection arm AS2 ideally should not vibrate. However, before balance tuning, they may vibrate due to factors such as manufacturing process variations. Therefore, during balance tuning, the unnecessary signal caused by the unnecessary vibration of the first detection arm AS1 and the second detection arm AS2 is measured, and the driving arm being processed or the processing amount of the driving arm is calculated based on the measured value.

[0092] And, if Figure 6 With this configuration, the unwanted vibration of the first detection arm AS1 can be measured based on the output of the first amplifier circuit 121, to which the unwanted signal from the first detection arm AS1 is input as the detection signal S1. Furthermore, the unwanted vibration of the second detection arm AS2 can be measured based on the output of the second amplifier circuit 122, to which the unwanted signal from the second detection arm AS2 is input as the detection signal S2.

[0093] However, in Figure 4In the case of a configuration such as , not only the unwanted signal caused by the unwanted vibration of the first detection arm AS1 is input to the first amplifier circuit 121, but also the unwanted signal caused by the unwanted vibration of the second detection arm AS2. Furthermore, not only the unwanted signal caused by the unwanted vibration of the second detection arm AS2 is input to the second amplifier circuit 122, but also the unwanted signal caused by the unwanted vibration of the first detection arm AS1. Consequently, since the unwanted signals caused by the unwanted vibration of each of the first and second detection arms AS1 and AS2 cannot be independently measured, there is a problem in achieving proper balanced tuning.

[0094] Therefore, in this embodiment, the following method is adopted: focusing on the support substrate 30 that relays signals between the physical quantity detection element 10 and the circuit device 20, by cutting and adding wiring in the support substrate 30, the inspection is set to Figure 6 Such a connection configuration, when operating, is set to Figure 4 This connection configuration allows for independent measurement of unwanted signals from each detection arm during inspection of the physical quantity detection device 1, enabling balance tuning. Furthermore, after balance tuning, by cutting and adding wiring in the support substrate 30, double wiring testing can be performed during operation of the physical quantity detection device 1, thereby doubling the number of detection electrodes. The method of this embodiment is described in detail below.

[0095] Figure 7 2 is a top view of the physical quantity detection element 10 . Figure 7 This is a plan view of the physical quantity detection element 10 as viewed from the bottom surface side, and mainly shows wiring around the base 21 .

[0096] exist Figure 7 In the embodiment, the physical quantity detection element 10 includes a base 21, a first detection arm AS1 (16P), and a second detection arm AS2 (16Q). The first detection arm AS1 has a first detection electrode ES1A and a second detection electrode ES1B, and the second detection arm AS2 has a third detection electrode ES2A and a fourth detection electrode ES2B. Furthermore, a terminal FS1A connected to the first detection electrode ES1A and a terminal FS1B connected to the second detection electrode ES1B are formed on the base 21. In addition, a terminal FS2A connected to the third detection electrode ES2A and a terminal FS2B connected to the fourth detection electrode ES2B are formed on the base 21. The terminals FS1A and FS1B are connected to the terminals FS1A and FS1B. Figure 2 The terminals 25A and 25B correspond to the terminals FS2A and FS2B. Figure 2 Furthermore, terminals FDS and FDG to which the drive electrodes EDS and EDG are connected are also formed on the base portion 21 .

[0097] Next, a detailed example of the support substrate 30 will be described. Figure 8 、 Figure 9 、 Figure 10 2 shows a top view of the support substrate 30. The support substrate 30 is also called a relay substrate, and is a plate-shaped substrate having, for example, a surface SF1 as a first surface and a surface SF2 as a second surface. Figure 8 、 Figure 9 This is a plan view of the support substrate 30 as viewed from the surface SF1 side. Figure 10 This is a top view of the support substrate 30 as viewed from the surface SF2 side. Figure 8 1 is a plan view showing an example of wiring of the support substrate 30 during inspection of the physical quantity detection device 1 . Figure 9 It is a plan view showing a wiring example of the support substrate 30 when the physical quantity detection device 1 is operating.

[0098] In this embodiment, the surface SF1 is described as the upper surface of the support substrate 30 and the surface SF2 is described as the lower surface of the support substrate 30. Figure 8 、 Figure 9 、 Figure 10 In the diagram, the first direction DR1 is, for example, a direction along the long side of the support substrate 30, and the second direction DR2 is, for example, a direction along the short side of the support substrate 30. The third direction DR3 is a direction orthogonal to the directions DR1 and DR2. The term "orthogonal" also includes "substantially orthogonal."

[0099] like Figures 8 to 10 As shown, the support substrate 30 includes a frame 40, an element mounting portion 70, and a plurality of beams 71, 72, 73, and 74. The element mounting portion 70 is provided inside the frame 40 and carries the physical quantity detection element 10. The beams 71, 72, 73, and 74 support the element mounting portion 70 inside the frame 40. Figures 8 to 10 The structure of the present invention can be modified by omitting some of the components of the structure or adding other components. For example, the following description will be given of the support substrate 30 as having a shape with a frame portion 40, but it can also be a structure without such a frame portion 40.

[0100] The support substrate 30 is, for example, made of a quartz substrate. By making the support substrate 30 from a quartz substrate, temperature-induced fluctuations in the resonant frequency of the support substrate 30 can be reduced compared to a case where a support member is made of, for example, a bonded body of a polyimide film and copper foil. This prevents unwanted vibrations in the physical quantity detection element 10 caused by the vibrations in the resonant frequency of the support substrate 30. Furthermore, the support substrate 30 is, for example, made of a substrate made of the same material as the physical quantity detection element 10. For example, if the physical quantity detection element 10 is made of a quartz substrate, the support substrate 30 is also made of the same quartz substrate. By making the support substrate 30 and the physical quantity detection element 10 from the same quartz substrate, the thermal expansion coefficients of the support substrate 30 and the physical quantity detection element 10 can be made equal. Therefore, thermal stress caused by the difference in thermal expansion coefficients between the support substrate 30 and the physical quantity detection element 10 is substantially eliminated, and, for example, separation of the bonding member B2 between the support substrate 30 and the physical quantity detection element 10 due to thermal stress can be prevented. Furthermore, the physical quantity detection element 10 is less susceptible to stress, and degradation or fluctuation in the vibration characteristics of the physical quantity detection element 10 can be more effectively suppressed.

[0101] For example, the support substrate 30 is composed of a quartz substrate with the same cutting angle as the physical quantity detection element 10. For example, in the case where the physical quantity detection element 10 is composed of a Z-cut quartz substrate, the support substrate 30 is also composed of a Z-cut quartz substrate. In addition, the orientation of the crystal axis of the support substrate 30 is consistent with the orientation of the crystal axis of the substrate of the physical quantity detection element 10. That is, in the support substrate 30 and the physical quantity detection element 10, the X axis is consistent, the Y axis is consistent, and the Z axis is consistent. Since quartz has different thermal expansion coefficients in the X-axis direction, the Y-axis direction, and the Z-axis direction, by setting the support substrate 30 and the substrate of the physical quantity detection element 10 to the same cutting angle and aligning the orientation of the crystal axes, the aforementioned thermal stress is less likely to be generated between the support substrate 30 and the physical quantity detection element 10. As a result, it is possible to further suppress the peeling of the bonding member B2 and the reduction of vibration characteristics caused by thermal stress.

[0102] Furthermore, the support substrate 30 is not limited to the above. For example, it may have the same cut angle as the substrate of the physical quantity detection element 10, but a different crystal axis orientation. Furthermore, the support substrate 30 may be formed from a quartz substrate having a different cut angle than the substrate of the physical quantity detection element 10. Furthermore, the support substrate 30 may not be formed from a quartz substrate. In this case, the material constituting the support substrate 30 is preferably a material having a smaller difference in thermal expansion coefficient with quartz than the difference in thermal expansion coefficient between quartz and the material constituting the base 2.

[0103] In addition, if Figures 8 to 10As shown, the support substrate 30 of this embodiment includes a frame portion 40. The frame portion 40 is a frame-shaped member having an inner region formed in such a manner as to surround the component mounting portion 70. For example, the frame portion 40 is a frame-shaped member having a shape such that the component mounting portion 70 is surrounded by a plurality of inner peripheries. Figures 8 to 10 In the embodiment, the element mounting portion 70 is surrounded by four inner peripheral edges SD1, SD2, SD3, and SD4, but a modification in which the element mounting portion 70 is surrounded by three inner peripheral edges or five or more inner peripheral edges is also possible.

[0104] Specifically, the frame portion 40 supporting the substrate 30 includes support portions 41 and 42 and connecting portions 51 and 52. The support portion 41 is a first support portion, and the support portion 42 is a second support portion. The connecting portion 51 is a first connecting portion, and the connecting portion 52 is a second connecting portion.

[0105] For example, the support portion 41 as the first support portion is mounted on the base 2. In addition, the support portion 42 as the second support portion is opposed to the support portion 41 and mounted on the base 2. Figures 8 to 10 As shown in FIG, the support portion 41 and the support portion 42 are opposite to each other in the direction DR1. Figure 1 As shown, the support parts 41 and 42 are joined to the base 2 by the joining member B1 and assembled. Specifically, the support parts 41 and 42 are joined to the step portion of the recess 9A of the base 2 by the joining member B1 made of a conductive adhesive and assembled. For example, the joining by the joining member B1 can be achieved by applying a conductive adhesive made of a thermosetting adhesive such as silver paste to the base 2. Figure 1 This is achieved by connecting the internal terminals 6A and 6B of the support substrate 30 to the support portions 41 and 42 .

[0106] In addition, the connecting parts 51 and 52 connect the support part 41 as the first support part and the support part 42 as the second support part. For example, the connecting part 51 as the first connecting part connects the support part 41 and the support part 42 at Figure 8 The upper side of the connecting portion 52 as the second connecting portion connects the supporting portion 41 and the supporting portion 42 at Figure 8 Furthermore, the area surrounded by the support parts 41, 42 and the connecting parts 51, 52 is the inner area of ​​the frame part 40, and the component mounting part 70 is provided in the inner area. Figures 8 to 10 In the embodiment, the number of connecting parts is 2, but the number of connecting parts may be 1, or may be 3 or more.

[0107] The beams 71, 72, 73, and 74 support the element mounting portion 70 in the inner region of the frame portion 40. The beams 71, 72, 73, and 74 can also be called spring portions. For example, the beams 71 and 72 extend from the support portion 41 of the frame portion 40 in the direction DR1. The beams 73 and 74 extend from the support portion 42 of the frame portion 40 in the direction opposite to the direction DR1. Figures 8 to 10 , the embodiment is not limited thereto, and the number of beams may be 2 or 3, or may be 5 or more. For example, as the plurality of beams, variations such as providing only beams 71 and 73, or only beams 72 and 74, are also possible.

[0108] like Figures 8 to 10 As shown, each of the beams 71, 72, 73, and 74 has an S-shaped portion midway, forming a shape that is easily elastically deformed in the directions of DR1, DR2, and DR3. By deforming the beams 71 to 74 in the directions of DR1, DR2, and DR3, the stress transmitted from the base 2 can be effectively absorbed and alleviated. For example, by bending the beams 71 to 74 in an S-shape, the beams 71 to 74 can be extended, so that stress or strain can be absorbed by the flexible deformation of the beams 71 to 74. In addition, mechanical shocks such as drop impact or vibration impact on the physical quantity detection device 1 can also be absorbed in the same way, and the stress, strain, or mechanical shock generated in the physical quantity detection element 10 can be reduced. However, the shape of each beam 71 to 74 is not particularly limited. For example, the curved portion can be omitted and the beams can be made straight. In addition, at least one of the beams 71 to 74 can also have a shape different from the others.

[0109] Then, the physical quantity detection element 10 is mounted on the element mounting portion 70 supported by the beams 71 to 74. For example, Figure 2 The base 21 of the physical quantity detection element 10 is connected via Figure 8 、 Figure 9 The conductive bonding member B2 is fixed, and the physical quantity detection element 10 is mounted on the element mounting portion 70. For example, the driving terminals and the detection terminals provided on the base portion 21 of the physical quantity detection element 10 are connected to the terminals. Figure 3 The engaging members B2 are shown as being engaged with each other.

[0110] That is, in Figure 7 The DS terminal FDS connected to the drive electrode EDS in the base portion 21 of the physical quantity detection element 10 is connected to the DS terminal FDS Figure 8 、 Figure 9 The DS bonding member B2 formed on the element mounting portion 70 is bonded thereto. Furthermore, the DG terminal FDG connected to the drive electrode EDG in the base portion 21 is bonded to the DG bonding member B2 formed on the element mounting portion 70 .

[0111] Furthermore, the S1A terminal FS1A and the S1B terminal FS1B connected to the first detection electrode ES1A and the second detection electrode ES1B in the base 21 are joined to the S1A and S1B joining members B2 formed in the element mounting portion 70. Furthermore, the S2A terminal FS2A and the S2B terminal FS2B connected to the third detection electrode ES2A and the fourth detection electrode ES2B in the base 21 are joined to the S2A and S2B joining members B2 formed in the element mounting portion 70.

[0112] In addition, if Figures 8 to 10 As shown, LDS, LDG, LS1A, LS1B, LS2A, LS2B, and LGND are provided on the support substrate 30 as wiring for DS, DG, S1A, S1B, S2A, S2B, and GND. Figure 10 As shown, on the surface SF2, for example, the lower surface of the support substrate 30, terminals TDS, TDG, TS1A, TS2A, and GND are provided. Furthermore, a metal film 43 set to a GND potential is formed on the upper and lower surfaces of the support substrate 30, and the GND wiring LGND is formed from this metal film 43. GND is the potential of the low-potential power supply and can also be referred to as VSS.

[0113] For example, DS uses wiring LDS as Figure 8 、 Figure 9 As shown, one end is connected to the DS bonding member B2 and is wound on the support substrate 30. Figure 10 As shown, the other end is connected to the DS terminal TDS. In addition, the DG wiring LDG is as shown Figure 8 、 Figure 9 As shown, one end is connected to the DG bonding member B2 and is wound on the support substrate 30. Figure 10 As shown, the other end is connected to the DG terminal TDG. The first wiring LS1A for S1A and the third wiring LS2A for S2A are shown in FIG. Figure 8 、 Figure 9 As shown, one end is connected to the S1A and S2A bonding members B2 and is wound on the support substrate 30. Figure 10 As shown, the other end is connected to the S1A terminal TS1A and the S2A terminal TS2A. In addition, the GND wiring LGND is as shown in FIG. Figure 8 、 Figure 9 As shown, one end is connected to the GND bonding member B2 and is wound on the support substrate 30. Figure 10 As shown, the other end is connected to the GND terminal TGND.

[0114] Furthermore, the DS, DG, S1A, S2A, and GND terminals TDS, TDG, TS1A, TS2A, and TGND are connected to the terminals provided on the DS, DG, S1A, S2A, and GND terminals via the DS, DG, S1A, S2A, and GND bonding members B1. Figure 1 The internal terminals 6A and 6B are formed on the stepped portion of the recess 9A. Furthermore, as previously described, the internal terminals 6A and 6B are connected to the internal terminals 7A and 7B via internal wiring not shown, and the internal terminals 7A and 7B are connected to the circuit device 20 via bonding wires BW. Thus, the drive signal DS, or the feedback signal DG, or the detection signals of S1A and S2A can be transmitted between the physical quantity detection element 10 and the circuit device 20 via the support substrate 30. In this way, the support substrate 30 also functions as a relay substrate for relaying signals. In addition, the GND terminal TGND of the support substrate 30 is connected to the GND terminal (pad) of the circuit device 20, and Figure 1 The GND external terminals 8A and 8B are also connected thereto.

[0115] Thus, the support substrate 30 of this embodiment is used as a relay substrate for relaying the signals DS, DG, S1A, and S2A between the physical quantity detection element 10 and the circuit device 20. In addition, in this embodiment, the support substrate 30 as such a relay substrate is used to achieve both Figure 4 Improvement in detection sensitivity due to the double wiring and balance tuning of the vibration of the physical quantity detection element 10 as described in .

[0116] For example, in this embodiment, when the physical quantity detection device 1 is inspected, the second wiring LS1B and the fourth wiring LS2B are grounded. That is, during inspection, the second wiring LS1B connected to the second detection electrode ES1B of the first detection arm AS1 is grounded, and the fourth wiring LS2B connected to the fourth detection electrode ES2B of the second detection arm AS2 is also grounded. Specifically, Figure 8 As shown in the wiring example during detection, the second wiring LS1B is connected to the first ground wiring LG1 via the connection line CSG1, thereby grounding the second wiring LS1B. In addition, the fourth wiring LS2B is connected to the second ground wiring LG2 via the connection line CSG2, thereby grounding the fourth wiring LS2B.

[0117] In this case, if Figure 6 As shown in the configuration example, during inspection, the second detection electrode ES1B of the first detection arm AS1 is grounded, and the fourth detection electrode ES2B of the second detection arm AS2 is also grounded. Therefore, during the balance tuning during inspection, it is possible to Figure 6In this way, the unnecessary signals caused by the unnecessary vibration of the first detection arm AS1 and the unnecessary signals caused by the unnecessary vibration of the second detection arm AS2 are independently measured. This allows the drive arm to be processed or the amount of processing to be calculated based on the measured values ​​based on the output of the first amplifier circuit 121 and the measured values ​​based on the output of the second amplifier circuit 122, thereby achieving balanced tuning of the physical quantity detection element 10.

[0118] On the other hand, when the physical quantity detection device 1 is operating, on the support substrate 30, the second wiring LS1B is connected to the third wiring LS2A, and the fourth wiring LS2B is connected to the first wiring LS1A. Specifically, the second wiring LS1B connected to the second detection electrode ES1B of the first detection arm AS1 is connected to the third wiring LS2A connected to the third detection electrode ES2A of the second detection arm AS2. Furthermore, the fourth wiring LS2B connected to the fourth detection electrode ES2B of the second detection arm AS2 is connected to the first wiring LS1A connected to the first detection electrode ES1A of the first detection arm AS1.

[0119] In this way, the third detection electrode ES2A of the second detection arm AS2 and the second detection electrode ES1B of the first detection arm AS1 are connected to the third detection electrode LS2A via the second wiring LS1B. In addition, the first detection electrode ES1A of the first detection arm AS1 and the fourth detection electrode ES2B of the second detection arm AS2 are connected to the first wiring LS1A via the fourth wiring LS2B. Therefore, for example, in the operation after the product is shipped, Figure 4 Similarly, the first detection signal S1A from the first detection electrode ES1A and the fourth detection signal S2B from the fourth detection electrode ES2B can be input to the first amplifier circuit 121. Furthermore, the third detection signal S2A from the third detection electrode ES2A and the second detection signal S1B from the second detection electrode ES1B can be input to the second amplifier circuit 122. Therefore, when the physical quantity detection device 1 is in operation, by doubling the area of ​​the detection electrodes and using double wiring, physical quantities such as angular velocity can be detected, thereby achieving improved sensitivity. Furthermore, "inspection" refers to, for example, the inspection of the physical quantity detection device 1 before shipment, and "operation" refers to the operation of the physical quantity detection device 1 after shipment, after it has been installed in an electronic device.

[0120] 4. Wiring connection on the support substrate

[0121] Next, use Figures 8 to 10 The wiring connection on the support substrate 30 will be described in detail. As mentioned above, Figure 8 FIG. 4 shows an example of wiring on the surface SF1 of the support substrate 30 during inspection. Figure 9 FIG. 3 shows an example of wiring on the surface SF1 of the support substrate 30 during operation. Figure 10The following diagram shows wiring examples on the surface SF2 of the support substrate 30 during inspection and operation.

[0122] In addition, Figure 8 、 Figure 9 as well as Figure 10 In the middle, up and down are opposite, Figure 8 、 Figure 9 The upper side and Figure 10 The lower side corresponds to Figure 8 、 Figure 9 The lower side and Figure 10 Therefore, in the following description, Figure 8 、 Figure 9 In the lower middle Figure 10 The middle is the upper side, Figure 8 、 Figure 9 In the upper middle Figure 10 The middle is the lower side.

[0123] For example, the first wiring LS1A is Figure 8 、 Figure 9 One end of the first wiring LS1A is connected to the S1A bonding member B2 in the lower right area of ​​the element mounting portion 70. And, after the first wiring LS1A is wired to the surface SF2 of the support substrate 30 through the beam portion 74, Figure 10 The inner periphery SD4 is folded back in the upper area and routed again in the surface SF1 to Figure 8 、 Figure 9 The first wiring LS1A is located in the lower area of ​​the support portion 42. Figure 8 、 Figure 9 After being connected to the pad PS1A arranged in the lower area of ​​the support portion 42, further wiring is performed on the surface SF1. Figure 8 、 Figure 9 folded back in the lower area of ​​the inner periphery SD4, Figure 10 The upper side region of the support portion 42 is connected to the terminal TS1A.

[0124] In addition, the second wiring LS1B Figure 8 、 Figure 9 One end of the second wiring LS1B is connected to the S1B bonding member B2 in the lower area of ​​the element mounting portion 70. In addition, the second wiring LS1B is wired to the surface SF2 of the support substrate 30 through the beam portion 74. Figure 10 The inner periphery SD4 is folded back in the upper area and routed again in the surface SF1 to Figure 8 、 Figure 9 The lower side area of ​​the support portion 42. Figure 8 、 Figure 9 In FIG. 4 , the second wiring LS1B is connected to a pad PS1B arranged in the lower region of the support portion 42 .

[0125] In addition, the third wiring LS2A Figure 8 、 Figure 9 In the upper right region of the element mounting portion 70, one end is connected to the S2A bonding member B2. Then, the third wiring LS2A is wired to the surface SF2 of the support substrate 30 through the beam portion 73. Figure 10 The inner periphery SD4 of the PCB is folded back and routed to the PCB again in the surface SF1. Figure 8 、 Figure 9 The third wiring LS2A is located in the upper area of ​​the support portion 42. Figure 8 、 Figure 9 After being connected to the pad PS2A arranged in the upper area of ​​the support portion 42, further wiring is performed on the surface SF1. Figure 8 、 Figure 9 folded back in the upper area of ​​the inner periphery SD4, Figure 10 The lower side region of the support portion 42 is connected to the terminal TS2A.

[0126] In addition, the fourth wiring LS2B Figure 8 、 Figure 9 One end of the fourth wiring LS2B is connected to the S2B bonding member B2 in the upper region of the element mounting portion 70. Then, the fourth wiring LS2B is wired to the surface SF2 of the support substrate 30 through the beam portion 73. Figure 10 The inner periphery SD4 of the PCB is folded back and routed to the PCB again in the surface SF1. Figure 8 、 Figure 9 The upper area of ​​the support portion 42. Figure 8 、 Figure 9 In FIG. 4 , the fourth wiring LS2B is connected to a pad PS2B arranged in the upper region of the support portion 42 .

[0127] In addition, on the support substrate 30, Figure 8 、 Figure 9 A first ground wiring LG1 is wired in a lower region of the support portion 41, and a second ground wiring LG2 is wired in an upper region of the support portion 41. These first ground wiring LG1 and second ground wiring LG2 are formed of a metal film 43 set to a ground potential.

[0128] Furthermore, when the physical quantity detection device 1 is inspected, Figure 8 As shown, the second wiring LS1B is connected to the first ground wiring LG1 via the connection line CSG1, thereby the second wiring LS1B is grounded. Figure 8 As shown, the fourth wiring LS2B is connected to the second ground wiring LG2 via the connection line CSG2, whereby the fourth wiring LS2B is grounded.

[0129] By grounding the second wiring LS1B, the second detection electrode ES1B of the first detection arm AS1 connected to the second wiring LS1B is grounded. In addition, by grounding the fourth wiring LS2B, the fourth detection electrode ES2B of the second detection arm AS2 connected to the fourth wiring LS2B is grounded. Figure 6 The connection configuration shown here enables balance tuning during inspection.

[0130] On the other hand, when the physical quantity detection device 1 is in operation, Figure 9 As shown, the connection between the second wiring LS1B and the first ground wiring LG1 is cut off, and a cut mark CT1 remains between the second wiring LS1B and the first ground wiring LG1. Figure 9 As shown, the connection between the fourth wiring LS2B and the second ground wiring LG2 is cut off, and a cut mark CT2 remains between the fourth wiring LS2B and the second ground wiring LG2.

[0131] For example, in this embodiment, after balance tuning, the connection line CSG1 between the second wiring line LS1B and the first ground wiring line LG1, and the connection line CSG2 between the fourth wiring line LS2B and the second ground wiring line LG2 are severed by irradiation with a laser or the like. As a result, cut marks CT1 and CT2 remain at the locations where the connection lines CSG1 and CSG2 were cut. These cut marks CT1 and CT2 indicate that the connection between the second wiring line LS1B and the ground, and the connection between the fourth wiring line LS2B and the ground, have been severed after balance tuning.

[0132] Furthermore, severing the connection between the second and fourth wirings LS1B and LS2B and the ground wiring is not limited to severing by irradiation with such a laser; for example, severing the connection by irradiation with energy beams other than lasers, such as ion beams, is also possible. Alternatively, the connection can be severed by providing a fuse element between the second and fourth wirings LS1B and LS2B and the ground wiring and allowing current to flow through the fuse element. Furthermore, the metal film forming the ground wiring can be used as the connecting wires CSG1 and CSG2 connecting the second and fourth wirings LS1B and LS2B to the ground wiring, but conductive members other than metal films, such as conductive adhesives, can also be used. Examples of methods for connection using conductive members include inkjet methods, coating methods, and bonding methods. The inkjet method is an electrostatic inkjet or piezoelectric inkjet method that ejects conductive ink or conductive paste. The coating method applies a conductive adhesive.

[0133] In addition, when the physical quantity detection device 1 is in operation, Figure 9As shown, pads PS1B and PS2A are connected by bonding wire BW1, and pads PS2B and PS1A are connected by bonding wire BW2. Furthermore, pad PS1A is connected to first wiring LS1A, and pad PS1B is connected to second wiring LS1B. Furthermore, pad PS2A is connected to third wiring LS2A, and pad PS2B is connected to fourth wiring LS2B. Thus, pads PS1B and PS2A are connected by bonding wire BW1, and second wiring LS1B connected to pad PS1B is connected to third wiring LS2A connected to pad PS2A. Furthermore, fourth wiring LS2B connected to pad PS2B is connected to first wiring LS1A connected to pad PS1A, through bonding wire BW2 connecting pads PS2B and PS1A. Bonding wires BW1 and BW2 can be made of, for example, gold or a gold alloy.

[0134] By connecting the second wiring LS1B and the third wiring LS2A in this manner, the second detection electrode ES1B of the first detection arm AS1 connected to the second wiring LS1B is connected to the third detection electrode ES2A of the second detection arm AS2 connected to the third wiring LS2A. Furthermore, by connecting the fourth wiring LS2B to the first wiring LS1A, the fourth detection electrode ES2B of the second detection arm AS2 connected to the fourth wiring LS2B is connected to the first detection electrode ES1A of the first detection arm AS1 connected to the first wiring LS1A. Thus, Figure 4 The connection configuration shown here can improve the sensitivity during operation by doubling the wiring.

[0135] Furthermore, the connection between the second wiring LS1B and the third wiring LS2A, and the connection between the fourth wiring LS2B and the first wiring LS1A during operation are not limited to bonding wires; various connection members can be used. For example, a conductive member such as a conductive adhesive can be used as the connection member between the wirings. For example, a first conductive member such as a first conductive adhesive can be formed between the second wiring LS1B and the third wiring LS2A to connect the two wirings, or a second conductive member such as a second conductive adhesive can be formed between the fourth wiring LS2B and the first wiring LS1A to connect the two wirings.

[0136] Next, use Figure 11 、 Figure 12 The wiring connection of this embodiment will be described briefly. Figure 11 This is a diagram schematically showing the wiring connections during inspection. Figure 12 This is a diagram schematically showing wiring connections during operation.

[0137] like Figure 11 、 Figure 12As shown, the first detection electrode ES1A is connected to one end of a first wiring LS1A on the support substrate 30 via terminals FS1A and S1A of the physical quantity detection element 10 using a bonding member B2. The first wiring LS1A is connected to a pad PS1A, and the other end of the first wiring LS1A is electrically connected to an input terminal of the first amplifier circuit 121 via terminals TS1A and S1A of the support substrate 30 using a bonding member B1.

[0138] The fourth detection electrode ES2B is connected to one end of a fourth wiring LS2B of the support substrate 30 by a bonding member B2 via the terminals FS2B and S2B of the physical quantity detection element 10. The other end of the fourth wiring LS2B is connected to a pad PS2B.

[0139] Furthermore, the third detection electrode ES2A is connected to one end of a third wiring LS2A of the support substrate 30 via a bonding member B2 via terminals FS2A and S2A of the physical quantity detection element 10. The third wiring LS2A is connected to a pad PS2A, and the other end of the third wiring LS2A is electrically connected to an input terminal of the second amplifier circuit 122 via terminals TS2A and S2A of the support substrate 30 via a bonding member B1.

[0140] The second detection electrode ES1B is connected to one end of a second wiring LS1B of the support substrate 30 by a bonding member B2 via the terminals FS1B and S1B of the physical quantity detection element 10. The other end of the second wiring LS1B is connected to a pad PS1B.

[0141] And, as Figure 11 As shown, during inspection, second wiring LS1B is connected to first ground wiring LG1 via connection line CSG1. Consequently, second detection electrode ES1B connected to second wiring LS1B is grounded. Furthermore, during inspection, fourth wiring LS2B is connected to second ground wiring LG2 via connection line CSG2. Consequently, fourth detection electrode ES2B connected to fourth wiring LS2B is grounded.

[0142] Therefore, if Figure 6 As shown in the connection configuration, the second detection electrode ES1B of the first detection arm AS1 and the fourth detection electrode ES2B of the second detection arm AS2 are grounded. Furthermore, the first detection signal S1A from the first detection electrode ES1A of the first detection arm AS1 is input to the first amplifier circuit 121, and the third detection signal S2A from the third detection electrode ES2A of the second detection arm AS2 is input to the second amplifier circuit 122. Thus, the unwanted signals caused by unwanted vibrations in the first detection arm AS1 and the second detection arm AS2 can be independently measured for balance tuning.

[0143] On the other hand, Figure 12 As shown, during operation, the connection between the second wiring LS1B and the first ground wiring LG1 is severed, and the second wiring LS1B is connected to the third wiring LS2A via the bonding wire BW1. Furthermore, the connection between the fourth wiring LS2B and the second ground wiring LG2 is severed, and the fourth wiring LS2B is connected to the first wiring LS1A via the bonding wire BW2.

[0144] Therefore, if Figure 4 As shown in the connection structure of FIG, the first detection signal S1A from the first detection electrode ES1A of the first detection arm AS1 and the fourth detection signal S2B from the fourth detection electrode ES2B of the second detection arm AS2 are input to the first amplifier circuit 121. In addition, the third detection signal S2A from the third detection electrode ES2A of the second detection arm AS2 and the second detection signal S1B from the second detection electrode ES1B of the first detection arm AS1 are input to the second amplifier circuit 122. Therefore, the signal obtained by adding the first detection signal S1A and the fourth detection signal S2B, which are in phase with each other, is input to the first amplifier circuit 121, and the signal obtained by adding the third detection signal S2A and the second detection signal S1B, which are in phase with each other, is input to the second amplifier circuit 122. In this way, Figure 4 The double wiring described in can improve the sensitivity of the physical quantity detection device 1 .

[0145] Furthermore, various modifications can be made to the connection wiring of this embodiment. For example, in the above description, the wiring of LS1B and LS2B is grounded during inspection, but the wiring of LS1A and LS2A may also be grounded. Figure 13 、 Figure 14 : is a diagram showing an example of wiring on the surfaces SF1 and SF2 of the support substrate 30 in this case, that is, a second wiring example. Figure 15 、 Figure 16 FIG. 1 is a diagram schematically showing wiring connections in the second wiring example.

[0146] For example, Figure 13 As shown in the second wiring example, the wiring of LS1A is connected to the first ground wiring LG1 through the connection line CSG1, and the wiring of LS2A is connected to the second ground wiring LG2 through the connection line CSG2. Figure 14 As shown, one end of the wiring of LS1B is connected to the terminal TS1B of the support substrate 30 , and one end of the wiring of LS2B is connected to the terminal TS2B of the support substrate 30 .

[0147] That is, when checking, Figure 15As shown, the electrode of ES1A is grounded by connecting to the first ground wiring LG1 via the wiring of LS1A, and the electrode of ES2A is grounded by connecting to the second ground wiring LG2 via the wiring of LS2A. The detection signal from the electrode of ES1B is input to the first amplifier circuit 121, and the detection signal from the electrode of ES2B is input to the second amplifier circuit 122.

[0148] In addition, when the action Figure 16 As shown, the wiring of LS1A and the wiring of LS2B are connected by bonding wire BW1, and the wiring of LS2A and the wiring of LS1B are connected by bonding wire BW2. As a result, the detection signal from the electrode of ES1B is added to the detection signal from the electrode of ES2A and input to the first amplifier circuit 121, while the detection signal from the electrode of ES2B is added to the detection signal from the electrode of ES1A and input to the second amplifier circuit 122.

[0149] In this second wiring example, for example Figure 15 、 Figure 16 The electrodes ES1B, ES2A, ES2B, and ES1A correspond to the first detection electrode, the fourth detection electrode, the third detection electrode, and the second detection electrode, respectively. The wirings LS1B, LS2A, LS2B, and LS1A correspond to the first wiring, the fourth wiring, the third wiring, and the second wiring, respectively.

[0150] As explained above, if Figure 1 、 Figure 2 As shown, the physical quantity detection device 1 of this embodiment includes a physical quantity detection element 10, a support substrate 30, and a circuit device 20. The physical quantity detection element 10 includes multiple detection arms (19P, 19Q), multiple drive arms (18P to 18S), and a base 21. The support substrate 30 supports the physical quantity detection element 10 at its base 21. The circuit device 20 also includes a detection circuit 110 that detects a physical quantity based on multiple detection signals from the multiple detection arms.

[0151] And, as Figure 7 As shown, the physical quantity detection element 10 includes a first detection arm AS1 (19P) and a second detection arm AS2 (19Q) as a plurality of detection arms. The first detection arm AS1 is a detection arm having a first detection electrode ES1A and a second detection electrode ES1B and extending from the base 21. The second detection arm AS2 is a detection arm having a third detection electrode ES2A and a fourth detection electrode ES2B and extending from the base 21 in a direction opposite to the first detection arm AS1.

[0152] In addition, if Figures 2 to 4As shown, the detection circuit 110 of the circuit device 20 includes a first amplifier circuit 121 and a second amplifier circuit 122. When the first amplifier circuit 121 is in operation, it receives as input a first detection signal S1A from the first detection electrode ES1A and a fourth detection signal S2B from the fourth detection electrode ES2B. Furthermore, when the second amplifier circuit 122 is in operation, it receives as input a third detection signal S2A from the third detection electrode ES2A and a second detection signal S1B from the second detection electrode ES1B.

[0153] In addition, if Figures 8 to 12 As shown, the support substrate 30 includes a first wiring line LS1A, a second wiring line LS1B, a third wiring line LS2A, and a fourth wiring line LS2B. One end of the first wiring line LS1A is connected to the first detection electrode ES1A, and one end of the second wiring line LS1B is connected to the second detection electrode ES1B. Furthermore, one end of the third wiring line LS2A is connected to the third detection electrode ES2A, and one end of the fourth wiring line LS2B is connected to the fourth detection electrode ES2B.

[0154] Furthermore, in this embodiment, the second wiring LS1B is formed in the support substrate 30, as shown in FIG. Figure 11 As shown, ground during inspection, such as Figure 12 As shown, it is connected to the third wiring LS2A during operation. In addition, the fourth wiring LS2B is in the supporting substrate 30, as shown in FIG. Figure 11 As shown, ground during inspection, such as Figure 12 As shown, it is connected to the first wiring LS1A during operation.

[0155] In this way, during inspection, the second detection electrode ES1B connected to the second detection electrode LS1B and the fourth detection electrode ES2B connected to the fourth detection electrode LS2B are grounded via the second and fourth wiring lines LS1B and LS2B, respectively. This allows the first detection signal S1A from the first detection electrode ES1A in the first detection arm AS1 to be input to the first amplifier circuit 121, and the third detection signal S2A from the third detection electrode ES2A in the second detection arm AS2 to be input to the second amplifier circuit 122. This allows the detection signals in the first and second detection arms AS1 and AS2 to be independently measured, achieving balanced tuning, for example. Furthermore, during operation, the first detection signal S1A from the first detection electrode ES1A and the fourth detection signal S2B from the fourth detection electrode ES2B can be input to the first amplifier circuit 121, while the third detection signal S2A from the third detection electrode ES2A and the second detection signal S1B from the second detection electrode ES1B can be input to the second amplifier circuit 122. This allows, for example, improved sensitivity due to the doubling of the wiring. Therefore, for example, it is possible to achieve both adjustment such as balance tuning and improvement of sensitivity.

[0156] In addition, if Figures 8 to 12As shown in FIG. 1 , the support substrate 30 includes a first ground wiring LG1 and a second ground wiring LG2. Figure 8 、 Figure 11 As shown, during testing, the first ground wire LG1 is connected to the second wire LS1B, and the second ground wire LG2 is connected to the fourth wire LS2B. This allows the connection of the first ground wire LG1 and the second wire LS1B, grounding the second wire LS1B and setting the second detection electrode ES1B connected to the second wire LS1B to ground potential. Furthermore, during testing, the connection of the second ground wire LG2 and the fourth wire LS2B is connected to ground, setting the fourth detection electrode ES2B connected to the fourth wire LS2B to ground potential. This allows for balanced tuning, for example. Alternatively, the first and second ground wires can be the same wire.

[0157] In addition, in this embodiment, Figure 17 and Figure 9 As shown, support substrate 30 has a cut mark CT1 between second wiring LS1B and first ground wiring LG1, and a cut mark CT2 between fourth wiring LS2B and second ground wiring LG2. Cut mark CT1 is the first cut mark, and cut mark CT2 is the second cut mark. The presence of these cut marks CT1 and CT2 on support substrate 30 indicates that second wiring LS1B and fourth wiring LS2B were grounded during inspection and subsequently cut.

[0158] In addition, if Figures 8 to 12 As shown, the support substrate 30 includes a terminal TS1A for connecting to the first input node N1 of the amplifier circuit 120 and a terminal TS2A for connecting to the second input node N2 of the amplifier circuit 120. The terminal TS1A is a first terminal, and the terminal TS2A is a second terminal. Furthermore, the terminal TS1A is connected to the first wiring LS1A, and the terminal TS2A is connected to the third wiring LS2A. That is, as shown in FIG. Figure 11 、 Figure 12 As shown, terminal TS1A connected to the support substrate 30 of the first amplifier circuit 121 is connected to the first wiring LS1A, and terminal TS2A connected to the support substrate 30 of the second amplifier circuit 122 is connected to the third wiring LS2A. For example, terminal TS1A is connected to the input terminal of the first detection signal S1A of the first amplifier circuit 121 via a bonding member B1 for S1A or wiring within the package. Furthermore, terminal TS2A is connected to the input terminal of the third detection signal S2A of the second amplifier circuit 122 via a bonding member B1 for S2A or wiring within the package.

[0159] In this manner, the first detection signal S1A from the first detection electrode ES1A of the first detection arm AS1 can be input to the first amplifier circuit 121 via the first wiring LS1A and the terminal TS1A. Furthermore, the third detection signal S2A from the third detection electrode ES2A of the second detection arm AS2 can be input to the second amplifier circuit 122 via the third wiring LS2A and the terminal TS2A.

[0160] In addition, if Figures 8 to 12 As shown, the second wiring LS1B is not connected to the terminal TS2A as the second terminal during inspection, and the fourth wiring LS2B is not connected to the terminal TS1A as the first terminal during inspection. Figure 12 In the operation shown, the second wiring LS1B is connected to the terminal TS2A via the bonding wire BW1, etc., but Figure 11 During the inspection shown in FIG. 1 , the second wiring LS1B is not connected to the terminal TS2A. Figure 12 In the operation shown, the fourth wiring LS2B is connected to the terminal TS1A via the bonding wire BW2, etc., but Figure 11 In the illustrated inspection, the fourth wiring LS2B is not connected to the terminal TS1A.

[0161] In this manner, during testing, the second detection electrode ES1B connected to the second wiring LS1B is not electrically connected to the second amplifier circuit 122 via the terminal TS2A. Furthermore, during testing, the fourth detection electrode ES2B connected to the fourth wiring LS2B is not electrically connected to the first amplifier circuit 121 via the terminal TS1A. This allows independent measurement of the detection signal from the first detection arm AS1 and the detection signal from the second detection arm AS2 during testing, allowing adjustments such as balance tuning to be performed.

[0162] In addition, if Figures 8 to 12 As shown, the support substrate 30 includes: a pad PS1A connected to the first wiring LS1A; a pad PS1B connected to the second wiring LS1B; a pad PS2A connected to the third wiring LS2A; and a pad PS2B connected to the fourth wiring LS2B. Pads PS1A, PS1B, PS2A, and PS2B are the first pad, the second pad, the third pad, and the fourth pad, respectively. Figure 12 As shown, during operation, pad PS1B is connected to pad PS2A, and pad PS2B is connected to pad PS1A.

[0163] In this way, the second wiring LS1B and the third wiring LS2A can be connected by connecting the pad PS1B and the pad PS2A, and the fourth wiring LS2B and the first wiring LS1A can be connected by connecting the pad PS2B and the pad PS1A. Furthermore, by providing such pads PS1A, PS1B, PS2A, and PS2B on the support substrate 30, the wirings can be easily connected after inspection.

[0164] In addition, if Figure 12 As shown, pad PS1B and pad PS2A are connected by bonding wire BW1, and pad PS2B and pad PS1A are connected by bonding wire BW2. Bonding wires BW1 and BW2 are first and second bonding wires, respectively.

[0165] In this manner, the second wiring LS1B and the third wiring LS2A can be connected by connecting the pad PS1B and the pad PS2A using the bonding wire BW1, and the fourth wiring LS2B and the first wiring LS1A can be connected by connecting the pad PS2B and the pad PS1A using the bonding wire BW2. Furthermore, by using bonding wires BW1 and BW2, even if other wiring exists between the second wiring LS1B and the third wiring LS2A, or between the fourth wiring LS2B and the first wiring LS1A, the wirings can be easily connected using bonding wires BW1 and BW2 over the other wirings.

[0166] Figure 18 An example of the arrangement relationship among the support substrate 30, the physical quantity detection element 10, and the circuit device 20 is shown in FIG. Figure 18 As shown, the physical quantity detection element 10 is arranged on the surface SF1 side of the support substrate 30. In addition, the circuit device 20 is arranged on the surface SF2 side of the support substrate 30. In other words, the support substrate 30 is arranged between the physical quantity detection element 10 and the circuit device 20.

[0167] And, as in Figure 17 As described in , the support substrate 30 has the cutoff mark CT1 between the second line LS1B and the first ground line LG1 , and has the cutoff mark CT2 between the fourth line LS2B and the second ground line LG2 .

[0168] In this case, if Figure 18 As shown, the cutting traces CT1 and CT2 do not overlap with the physical quantity detection element 10 when viewed from above. For example, the top view is viewed from a direction perpendicular to the support substrate 30, that is, from a direction DR3. For example, the physical quantity detection element 10 includes components such as the base 21, the drive arms 18P to 18S, the detection arms 19P and 19Q, and the weights 27P to 27S. Figure 18As shown, the cutting traces CT1 and CT2 are formed at positions that do not overlap with any of these members in a plan view.

[0169] In addition, if Figure 18 As shown, the cutting marks CT1 and CT2 do not overlap with the circuit device 20 in a plan view. For example, in the circuit device 20 as a semiconductor chip, a plurality of circuits are laid out, but the cutting marks CT1 and CT2 are formed at positions that do not overlap with any of these circuits in a plan view.

[0170] In this way, it is possible to realize a physical quantity detection device 1 that can prevent adverse conditions from occurring due to the disconnection even when the connection between the second wiring LS1B and the first ground wiring LG1 or the connection between the fourth wiring LS2B and the second ground wiring LG2 is disconnected. For example, when the connection between the second wiring LS1B and the first ground wiring LG1 or the connection between the fourth wiring LS2B and the second ground wiring LG2 is disconnected by energy lines such as laser, when the energy lines irradiate the physical quantity detection element 10 or the circuit device 20, there is a possibility of adverse effects on the element characteristics of the physical quantity detection element 10 or adverse effects on the circuit characteristics of the circuit device 20. For example, adverse conditions such as deterioration of the vibration characteristics of the physical quantity detection element 10 or deterioration of the circuit characteristics of the circuit device 20 may occur. In this regard, Figure 18 In the figure, cut marks CT1 and CT2 are formed at locations where the energy beams such as laser beams do not irradiate the physical quantity detection element 10 or the circuit device 20, indicating that the energy beams do not irradiate the physical quantity detection element 10 or the circuit device 20. Therefore, a physical quantity detection device 1 can be realized that can prevent the occurrence of malfunctions caused by the disconnection of wiring and ground wiring due to energy beams.

[0171] In addition, if Figure 1 As shown, the physical quantity detection device 1 includes a package 4 that houses a physical quantity detection element 10, a support substrate 30, and a circuit device 20. The package 4 is composed of, for example, a base 2 and a cover 3. In this case, the cutting trace CT1 and the cutting trace CT2 overlap with the base 2 of the package 4 when viewed from above. For example, Figure 18 The dotted line corresponding to the base 2 is shown in FIG. Figure 1 The base 2 is located below the cut marks CT1 and CT2 (on the opposite side of DR3), without intervening other components or elements such as terminals. If the base 2 is made of ceramic, for example, it can withstand exposure to energy beams that cut through wiring and ground wiring. Therefore, by overlapping the cut marks CT1 and CT2 with the base 2 when viewed from above, a physical quantity detection device 1 can be achieved that prevents problems caused by exposure to energy beams such as laser beams.

[0172] In addition, in this embodiment, if Figure 8 、 Figure 9 As described above, pads PS1A, PS1B, PS2A, and PS2B serving as connection terminals for wiring are provided on the support substrate 30. Pads PS1A, PS1B, PS2A, and PS2B are the first, second, third, and fourth pads, respectively, and are connected to the wirings LS1A, LS1B, LS2A, and LS2B.

[0173] And, in Figure 18 In the plan view, the pads PS1A, PS1B, PS2A, and PS2B do not overlap with the physical quantity detection element 10. For example, the pads PS1A, PS1B, PS2A, and PS2B are formed at positions that do not overlap with members constituting the physical quantity detection element 10 in the plan view.

[0174] In addition, Figure 18 In the embodiment, the pads PS1A, PS1B, PS2A, and PS2B do not overlap with the circuit device 20 in a plan view. For example, the pads PS1A, PS1B, PS2A, and PS2B are formed at positions that do not overlap with the circuits constituting the circuit device 20 in a plan view.

[0175] In this way, even when wiring connection using pads PS1A, PS1B, PS2A, and PS2B is performed, it is possible to realize a physical quantity detection device 1 that can prevent malfunctions caused by the wiring connection. Figure 9 、 Figure 12 In the embodiment, pads PS1B and PS2A are connected by bonding wire BW1, and pads PS2B and PS1A are connected by bonding wire BW2. In this case, when pressure or impact caused by the connection of bonding wires BW1 and BW2 is applied to physical quantity detection element 10 or circuit device 20, it is possible to have an adverse effect on the element characteristics of physical quantity detection element 10 or the circuit characteristics of circuit device 20. For example, adverse conditions such as deterioration of the vibration characteristics of physical quantity detection element 10 or deterioration of the circuit characteristics of circuit device 20 may occur. In this regard, Figure 18 In the embodiment, the pads PS1A, PS1B, PS2A, and PS2B are formed at positions where pressure or impact caused by connections such as bonding wires BW1 and BW2 is not applied to the physical quantity detection element 10 or the circuit device 20. Therefore, a physical quantity detection device 1 can be implemented that can prevent problems caused by wiring connections using the pads PS1A, PS1B, PS2A, and PS2B.

[0176] In addition, Figure 18In the embodiment, the pads PS1A, PS1B, PS2A, and PS2B overlap with the base 2 of the package 4 when viewed from above. For example, the base 2 exists below the pads PS1A, PS1B, PS2A, and PS2B (on the side opposite DR3) without intervening other components or elements such as terminals. If the base 2 is made of, for example, ceramic, it can withstand stress or impact caused by wiring connections using bonding wires BW1 and BW2. Therefore, a physical quantity detection device 1 can be achieved in which the pads PS1A, PS1B, PS2A, and PS2B overlap with the base 2 when viewed from above, preventing problems caused by wiring connections using bonding wires BW1 and BW2.

[0177] 5. Manufacturing Method

[0178] Next, use Figure 19 An example of a method for manufacturing the physical quantity detection device 1 of this embodiment will be described. Figure 19 As shown, in step SP1, the physical quantity detection element 10 and the support substrate 30 are prepared. Figure 8 、 Figure 11 As shown, in support substrate 30, second wiring LS1B and first ground wiring LG1 are connected by connection wire CSG1, and fourth wiring LS2B and second ground wiring LG2 are connected by connection wire CSG2. Furthermore, pads PS1B and PS2A, or pads PS2B and PS1A, are not connected, and no connecting members such as bonding wires are provided.

[0179] In step SP2, the physical quantity detection element 10 is mounted on the support substrate 30. Specifically, Figure 1 In the embodiment, the support substrate 30 is first mounted on the package 4. For example, the support substrate 30 is bonded and mounted to the step portion of the recess 9A of the base 2 of the package 4 using the bonding member B1. Then, the physical quantity detection element 10 is bonded and mounted to the support substrate 30 mounted on the base 2 using the bonding member B2.

[0180] In step SP3, the drive arm is adjusted based on the detection signal. Figure 11 In the embodiment, the first detection signal S1A from the first detection electrode ES1A of the first detection arm AS1 is input to the first amplifier circuit 121, and the unnecessary signal caused by the unnecessary vibration of the first detection arm AS1 is measured. In addition, the third detection signal S2A from the third detection electrode ES2A of the second detection arm AS2 is input to the second amplifier circuit 122, and the unnecessary signal caused by the unnecessary vibration of the second detection arm AS2 is measured. Then, based on the measurement results of these unnecessary signals, the adjustment is performed. Figure 2At least one of the drive arms 18P-18S is balanced. Specifically, balance tuning is performed. Specifically, a gold film, approximately 1 μm thick, formed on the weights 27P-27S at the tip of the drive arms 18P-18S is irradiated with an energy beam such as a laser, partially removing the gold film. Removing the gold film increases the frequency. Alternatively, a method using a metal mask and applying a gold film by sputtering or vapor deposition can be used to reduce the frequency.

[0181] During balance tuning, while measuring the detection signal generated by the useless vibration, the mass of the weight portion provided on each driving arm is changed to perform adjustments to reduce the useless vibration. In addition, during balance tuning, the useless signals generated from the two detection arms are measured separately, and the processing amount of the driving arm is calculated based on the measured values. In this way, by changing the mass of the weight portion, the frequency generated by the driving arm can be adjusted, and the generation of useless signals caused by the useless vibration of the detection arm can be suppressed. In addition, since balance tuning is performed after the physical quantity detection element 10 is mounted on the package 4 or the support substrate 30, a more reliable physical quantity detection device 1 can be provided. In addition, since the detection signal is amplified by the first amplifier circuit 121 and the second amplifier circuit 122, even tiny useless signals detected by the detection electrode can be reliably measured.

[0182] In step SP4, the connection between the second wiring LS1B and the ground and the connection between the fourth wiring LS2B and the ground are cut off. Figure 9 、 Figure 12 As shown, the connection between the second wiring LS1B and the first ground wiring LG1 is cut off, and the connection between the fourth wiring LS2B and the second ground wiring LG2 is cut off. For example, by irradiating the energy line such as laser to Figure 8 、 Figure 11 The connection lines CSG1 and CSG2 are cut off from each wiring and the ground wiring. Figure 9 、 Figure 12 、 Figure 17 The wirings are disconnected from the ground wiring by cutting the cutting traces CT1 and CT2 as shown.

[0183] In addition, in step SP5, the second wiring LS1B is connected to the third wiring LS2A, and the fourth wiring LS2B is connected to the first wiring LS1A. Figure 9 、 Figure 12As shown, the second wiring LS1B is connected to the third wiring LS2A by connecting the pad PS1B to which the second wiring LS1B is connected and the pad PS2A to which the third wiring LS2A is connected using a bonding wire BW1. Furthermore, the fourth wiring LS2B is connected to the first wiring LS1A by connecting the pad PS2B to which the fourth wiring LS2B is connected and the pad PS1A to which the first wiring LS1A is connected using a bonding wire BW2.

[0184] As described above, the manufacturing method of this embodiment is Figures 1 to 18 The manufacturing method of the physical quantity detection device 1 described in [ 1 ] includes: a first step (SP1) of preparing the physical quantity detection element 10 and the support substrate 30; a second step (SP2) of mounting the physical quantity detection element 10 on the support substrate 30; and a third step (SP3) of adjusting at least one of the plurality of drive arms. Furthermore, the manufacturing method of this embodiment includes: a fourth step (SP4) of disconnecting the second wiring LS1B from ground and disconnecting the fourth wiring LS2B from ground; and a fifth step (SP5) of connecting the second wiring LS1B to the third wiring LS2A and connecting the fourth wiring LS2B to the first wiring LS1A.

[0185] In this way, for example, before the fourth step (SP4), the second wiring LS1B and the ground are already connected, as is the fourth wiring LS2B. Consequently, the first detection signal S1A from the first detection electrode ES1A of the first detection arm AS1 can be input to the first amplifier circuit 121, and the third detection signal S2A from the third detection electrode ES2A of the second detection arm AS2 can be input to the second amplifier circuit 122. This allows independent measurement of the detection signals in the first and second detection arms AS1 and AS2, enabling balanced tuning, for example. Furthermore, after the fourth step (SP4) and the fifth step (SP5), the connection between the second wiring LS1B and the ground, as well as the connection between the fourth wiring LS2B and the ground, is severed. The second wiring LS1B is connected to the third wiring LS2A, and the fourth wiring LS2B is connected to the first wiring LS1A. Thus, the first detection signal S1A from the first detection electrode ES1A and the fourth detection signal S2B from the fourth detection electrode ES2B can be input to the first amplifier circuit 121, and the third detection signal S2A from the third detection electrode ES2A and the second detection signal S1B from the second detection electrode ES1B can be input to the second amplifier circuit 122. This can achieve, for example, an improvement in sensitivity due to double wiring.

[0186] As described above, the physical quantity detection device of this embodiment includes: a physical quantity detection element having multiple detection arms, multiple drive arms, and a base; a support substrate supporting the physical quantity detection element at the base; and a circuit device including a detection circuit for detecting a physical quantity based on multiple detection signals from the multiple detection arms of the physical quantity detection element. Furthermore, the physical quantity detection element includes, as multiple detection arms, a first detection arm having a first detection electrode and a second detection electrode, extending from the base; and a second detection arm having a third detection electrode and a fourth detection electrode, extending from the base in a direction opposite to the first detection arm. Furthermore, the detection circuit of the circuit device includes: a first amplifier circuit, which, during operation, receives a first detection signal from the first detection electrode and a fourth detection signal from the fourth detection electrode; and a second amplifier circuit, which, during operation, receives a third detection signal from the third detection electrode and a second detection signal from the second detection electrode. Furthermore, the support substrate includes: a first wiring having one end connected to the first detection electrode; a second wiring having one end connected to the second detection electrode; a third wiring having one end connected to the third detection electrode; and a fourth wiring having one end connected to the fourth detection electrode. Furthermore, the second wiring is in the support substrate, grounded during inspection and connected to the third wiring during operation. The fourth wiring is in the support substrate, grounded during inspection and connected to the first wiring during operation.

[0187] According to this embodiment, during inspection, the second detection electrode connected to the second detection electrode and the fourth detection electrode connected to the fourth detection electrode are grounded through the second wiring and the fourth wiring. As a result, the first detection signal from the first detection electrode of the first detection arm can be input into the first amplifier circuit, and the third detection signal from the third detection electrode of the second detection arm can be input into the second amplifier circuit to independently measure the detection signals in the first detection arm and the second detection arm. In addition, during operation, the second wiring is connected to the third wiring, and the fourth wiring is connected to the first wiring. Therefore, the first detection signal from the first detection electrode and the fourth detection signal from the fourth detection electrode can be input into the first amplifier circuit, and the third detection signal from the third detection electrode and the second detection signal from the second detection electrode can be input into the second amplifier circuit, so that improved sensitivity can be achieved.

[0188] In the present embodiment, the support substrate may include a first ground wiring and a second ground wiring, and during inspection, the first ground wiring may be connected to the second wiring, and the second ground wiring may be connected to the fourth wiring.

[0189] In this manner, during inspection, the second wiring is connected to the ground via the first ground wiring, and the fourth wiring is connected to the ground via the second ground wiring.

[0190] In the present embodiment, the support substrate may include a first cutting mark between the second wiring and the first ground wiring, and a second cutting mark between the fourth wiring and the second ground wiring.

[0191] It is shown that the supporting substrate has such a first cutting mark and a second cutting mark, and the second wiring and the fourth wiring are grounded during the inspection.

[0192] In the present embodiment, the first cutting mark and the second cutting mark may not overlap with the physical quantity detection element in a plan view.

[0193] With this configuration, even when the connection between the second wiring and the first ground wiring or the connection between the fourth wiring and the second ground wiring is severed, adverse effects due to the severed connection can be prevented from affecting the physical quantity detection element.

[0194] In the present embodiment, the first cutting mark and the second cutting mark may not overlap with the circuit device in a plan view.

[0195] With this configuration, even when the connection between the second wiring and the first ground wiring or the connection between the fourth wiring and the second ground wiring is severed, adverse effects due to the severed connection can be prevented from affecting the circuit device.

[0196] In this embodiment, the support substrate may include a first terminal for connecting to the first amplifier circuit and a second terminal for connecting to the second amplifier circuit, the first terminal may be connected to the first wiring, and the second terminal may be connected to the third wiring.

[0197] In this way, the first detection signal from the first detection electrode of the first detection arm can be input to the first amplifier circuit via the first wiring and the first terminal. In addition, the third detection signal from the third detection electrode of the second detection arm can be input to the second amplifier circuit via the third wiring and the second terminal.

[0198] In addition, in this embodiment, the second terminal may not be connected during the second wiring inspection, and the first terminal may not be connected during the fourth wiring inspection.

[0199] In this manner, during inspection, the second detection electrode connected to the second wiring is not electrically connected to the second amplifier circuit via the first terminal, and the fourth detection electrode connected to the fourth wiring is not electrically connected to the first amplifier circuit via the second terminal.

[0200] In addition, in this embodiment, the supporting substrate may include: a first solder pad connected to the first wiring; a second solder pad connected to the second wiring; a third solder pad connected to the third wiring; and a fourth solder pad connected to the fourth wiring. During operation, the second solder pad is connected to the third solder pad, and the fourth solder pad is connected to the first solder pad.

[0201] In this case, the second wiring and the third wiring can be connected by connecting the second pad and the third pad, and the fourth wiring and the first wiring can be connected by connecting the fourth pad and the first pad.

[0202] In this embodiment, the second pad and the third pad may be connected by a first bonding wire, and the fourth pad and the first pad may be connected by a second bonding wire.

[0203] In this manner, the second wiring and the third wiring can be connected by connecting the second pad and the third pad using the first bonding wire, and the fourth wiring and the first wiring can be connected by connecting the fourth pad and the first pad using the second bonding wire.

[0204] In addition, in the present embodiment, the first pad, the second pad, the third pad, and the fourth pad may not overlap with the physical quantity detection element in a plan view.

[0205] With this configuration, even when wiring connections are performed using the first pad, the second pad, the third pad, and the fourth pad, adverse effects of the wiring connections can be prevented from affecting the physical quantity detection element.

[0206] In addition, in the present embodiment, the first pad, the second pad, the third pad, and the fourth pad may not overlap with the circuit device in a plan view.

[0207] With this configuration, even when wiring connections are performed using the first pad, the second pad, the third pad, and the fourth pad, adverse effects of the wiring connections can be prevented from affecting the circuit device.

[0208] The manufacturing method of this embodiment is a method for manufacturing a physical quantity detection device, comprising: a physical quantity detection element having multiple detection arms, multiple drive arms, and a base; a support substrate supporting the physical quantity detection element at the base; and a circuit device having a detection circuit for detecting a physical quantity based on multiple detection signals from the multiple detection arms of the physical quantity detection element. The physical quantity detection element includes, as multiple detection arms, a first detection arm having a first detection electrode and a second detection electrode, extending from the base; and a second detection arm having a third detection electrode and a fourth detection electrode, extending from the base in a direction opposite to the first detection arm. The detection circuit of the circuit device includes an amplifier circuit. When the amplifier circuit operates, a first detection signal from the first detection electrode and a fourth detection signal from the fourth detection electrode are input to a first input node, and a third detection signal from the third detection electrode and a second detection signal from the second detection electrode are input to a second input node. The support substrate includes a first wiring having one end connected to the first detection electrode; a second wiring having one end connected to the second detection electrode; a third wiring having one end connected to the third detection electrode; and a fourth wiring having one end connected to the fourth detection electrode. The manufacturing method of this embodiment includes: a first step of preparing a physical quantity detection element and a support substrate; a second step of mounting the physical quantity detection element on the support substrate; and a third step of adjusting at least one of the plurality of drive arms. Furthermore, the manufacturing method of this embodiment includes: a fourth step of severing the connection between the second wiring and the ground, and the connection between the fourth wiring and the ground; and a fifth step of connecting the second wiring to the third wiring, and connecting the fourth wiring to the first wiring.

[0209] In this manner, before the fourth step, the first detection signal from the first detection electrode of the first detection arm can be input to the first amplifier circuit, and the third detection signal from the third detection electrode of the second detection arm can be input to the second amplifier circuit, thereby independently measuring the detection signals from the first detection arm and the second detection arm. Furthermore, after the fourth and fifth steps, the first detection signal from the first detection electrode and the fourth detection signal from the fourth detection electrode can be input to the first amplifier circuit, and the third detection signal from the third detection electrode and the second detection signal from the second detection electrode can be input to the second amplifier circuit.

[0210] In addition, although the present embodiment has been described in detail as described above, it is easy for a person skilled in the art to understand that multiple modifications can be made that do not actually deviate from the novel matters and effects of the present invention. Therefore, such modifications are all included within the scope of the present invention. For example, in the specification or the drawings, a term recorded together with a different term in a broader sense or with the same meaning can be replaced with its different term at least once in any part of the specification or the drawings. In addition, the configuration of the physical quantity detection device, the supporting substrate, the physical quantity detection element, the circuit device, etc. is not limited to the configuration described in the present embodiment, and various modifications can be implemented.

Claims

1. A physical quantity detection device, characterized in that: Include: A physical quantity detection element having a plurality of detection arms, a plurality of drive arms, and a base; a supporting substrate supporting the physical quantity detecting element at the base; as well as a circuit device having a detection circuit for detecting a physical quantity based on a plurality of detection signals from the plurality of detection arms of the physical quantity detection element, The physical quantity detection element as the plurality of detection arms includes: a first detection arm having a first detection electrode and a second detection electrode, extending from the base; as well as A second detection arm having a third detection electrode and a fourth detection electrode, extending from the base in a direction opposite to the first detection arm, The detection circuit of the circuit device includes an amplifier circuit. When the amplifier circuit operates, a first detection signal from the first detection electrode and a fourth detection signal from the fourth detection electrode are input to a first input node, and a third detection signal from the third detection electrode and a second detection signal from the second detection electrode are input to a second input node. The supporting substrate comprises: a first wiring having one end connected to the first detection electrode; a second wiring having one end connected to the second detection electrode; a third wiring, one end of which is connected to the third detection electrode; as well as a fourth wiring having one end connected to the fourth detection electrode, The second wiring is connected to the ground in the support substrate during inspection and is connected to the third wiring in operation. In the support substrate, the fourth wiring is grounded during inspection and connected to the first wiring during operation.

2. The physical quantity detection device according to claim 1, characterized in that The supporting substrate comprises: a first ground wiring; and a second ground wiring, During inspection, the first ground wiring is connected to the second wiring, and the second ground wiring is connected to the fourth wiring.

3. The physical quantity detection device according to claim 2, characterized in that The supporting substrate There is a first cutting mark between the second wiring and the first ground wiring, A second cutting trace is provided between the fourth wiring and the second ground wiring.

4. The physical quantity detection device according to claim 3, wherein: The first cutting mark and the second cutting mark do not overlap with the physical quantity detection element in a plan view.

5. The physical quantity detection device according to claim 3, wherein: The first cutting trace and the second cutting trace do not overlap with the circuit device in a plan view.

6. The physical quantity detection device according to claim 1, wherein The supporting substrate comprises: a first terminal, configured to be connected to the first input node of the amplifier circuit; as well as a second terminal for connecting to the second input node of the amplifier circuit, the first terminal is connected to the first wiring, The second terminal is connected to the third wiring.

7. The physical quantity detection device according to claim 6, characterized in that The second wiring is not connected to the second terminal during inspection, The fourth wiring is not connected to the first terminal during inspection.

8. The physical quantity detection device according to claim 1, wherein The supporting substrate comprises: a first pad connected to the first wiring; a second pad connected to the second wiring; a third pad connected to the third wiring; and a fourth pad connected to the fourth wiring, During operation, the second pad is connected to the third pad, and the fourth pad is connected to the first pad.

9. The physical quantity detection device according to claim 8, characterized in that The second pad and the third pad are connected by a first bonding wire. The fourth pad is connected to the first pad by a second bonding wire.

10. The physical quantity detection device according to claim 8, wherein The first pad, the second pad, the third pad, and the fourth pad do not overlap with the physical quantity detection element in a plan view.

11. The physical quantity detection device according to claim 8, characterized in that The first pad, the second pad, the third pad, and the fourth pad do not overlap with the circuit device in a plan view.

12. A method for manufacturing a physical quantity detection device, the physical quantity detection device comprising: a physical quantity detection element having a plurality of detection arms, a plurality of drive arms, and a base; a supporting substrate supporting the physical quantity detecting element at the base; and a circuit device having a detection circuit for detecting a physical quantity based on a plurality of detection signals from the plurality of detection arms of the physical quantity detection element, wherein the method for manufacturing the physical quantity detection device is characterized in that: The physical quantity detection element as the plurality of detection arms includes: a first detection arm having a first detection electrode and a second detection electrode, extending from the base; as well as A second detection arm having a third detection electrode and a fourth detection electrode, extending from the base in a direction opposite to the first detection arm, The detection circuit of the circuit device The amplifier circuit includes an amplifier circuit, wherein when the amplifier circuit operates, a first detection signal from the first detection electrode and a fourth detection signal from the fourth detection electrode are input to a first input node, and a third detection signal from the third detection electrode and a second detection signal from the second detection electrode are input to a second input node. The supporting substrate comprises: a first wiring having one end connected to the first detection electrode; a second wiring having one end connected to the second detection electrode; a third wiring, one end of which is connected to the third detection electrode; as well as a fourth wiring having one end connected to the fourth detection electrode, The manufacturing method of the physical quantity detection device comprises: The first step is to prepare the physical quantity detection element and the support substrate; A second step is to mount the physical quantity detection element on the support substrate; A third step is to adjust at least one driving arm of the plurality of driving arms; a fourth step of cutting off the connection between the second wiring and the ground and the connection between the fourth wiring and the ground; as well as In a fifth step, the second wiring is connected to the third wiring, and the fourth wiring is connected to the first wiring.

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