Solid film material processing equipment and control method thereof

Abstract

The invention provides solid thin film material processing equipment and a control method thereof, and relates to the field of laser-induced forward transfer processing.The solid thin film material processing equipment uses two sets of adjusting devices to independently adjust and control the levelness of a donor substrate and a receiving substrate, so that the donor substrate and the receiving substrate are absolutely horizontal, and then high-precision relative parallelism is achieved; besides, the equipment stably adsorbs the donor substrate through the air pressure adsorption clamp, and realizes accurate control of the donor and the receiving substrate from an attached state to a state of keeping a micron-order or even submicron-order gap by combining with vertical movement of the piezoelectric platform.

Description

Technical Field

[0001] This invention relates to the field of laser-induced forward transfer processing, and in particular to a solid thin film material processing equipment and its control method. Background Technology

[0002] Solid-film laser-induced forward transfer technology, as a novel solid-film material processing technology, has demonstrated unique value in high-end manufacturing in the microelectronics field due to its non-contact processing, high precision, and multi-material compatibility. In particular, it has achieved significant breakthroughs in the printing of microspheres with a precision of hundreds of nanometers and the printing of wires at the micrometer level, providing new solutions for cutting-edge fields such as integrated circuits, flexible electronics, and 3D packaging.

[0003] In the process of laser-induced forward transfer technology for solid-state thin films, a laser beam is incident from one side of the donor substrate, which is typically an optically transparent material (such as glass). Its function is to allow the laser to be transmitted to the underlying solid-state thin film with almost no energy loss. The solid-state thin film to be transferred is usually described as the donor, and can be a metal (such as gold, copper, and aluminum), a conductive polymer, or an oxide. After laser action, the donor locally absorbs energy, undergoes thermal expansion or vaporization, forming bulges or plasma, which in turn generates stress waves. This causes the portion of the donor material not affected by the laser to detach from the donor substrate and be transferred to the receiving substrate for deposition. The receiving substrate can be a flexible thin film, an electrode, a circuit board, or glass. The receiving substrate and the donor can be naturally bonded or have a certain gap to achieve different transfer methods, such as imprinting with natural bonding or fly-through transfer with a gap. The gap in fly-through transfer has a crucial impact on the laser defocusing amount, the material flight path, and the deposition resolution.

[0004] High-precision laser-induced forward transfer of solid-state thin films requires two conditions: first, the gap between the donor and receiver substrates must be controlled within 10 µm; second, their horizontal alignment must be as consistent as possible during continuous transfer. However, in existing laser-induced forward transfer technologies, the donor and receiver substrates are connected through various types of fixed-height gap layers or simple mechanical structures. This approach cannot flexibly achieve precise control over the transition from a bonded state to maintaining a gap at the micrometer or even submicrometer level. Furthermore, the simple mechanical connection method cannot guarantee the relative parallelism of the donor and receiver substrates, thus failing to meet the requirements for high-precision transfer of solid-state thin-film materials. Summary of the Invention

[0005] In view of this, the purpose of the present invention is to provide a solid thin film material processing equipment and its control method. The solid thin film material processing equipment uses two sets of adjustment devices to independently adjust and control the levelness of the donor substrate and the receiver substrate, so that they are absolutely level and thus achieve high-precision relative parallelism. In addition, the equipment uses a pneumatic adsorption clamp to stably adsorb the donor substrate, and combines the vertical movement of the piezoelectric platform to achieve high-precision gap control between the donor and receiver substrates, thereby solving many problems existing in the prior art.

[0006] In a first aspect, embodiments of the present invention provide a solid thin film material processing apparatus, which uses a laser beam to convert a donor into the transfer material, wherein the donor is fixed on a donor substrate and the transfer material is deposited on a receiving substrate. The solid thin film material processing equipment includes at least: an optical path module and a processing module; The optical path module includes at least: a femtosecond laser, a harmonic beam splitter, and an objective lens; the femtosecond laser is used to emit a laser beam, the harmonic beam splitter is used to reflect the laser beam to the objective lens; the objective lens is used to control the focusing of the laser beam onto the processing module; The processing module includes at least: a pneumatic adsorption fixture, a piezoelectric platform, a donor substrate adjustment device, a receiver substrate adjustment device, and a three-dimensional displacement platform; the donor substrate adjustment device and the receiver substrate adjustment device are fixed on the three-dimensional displacement platform, the pneumatic adsorption fixture is fixed in the donor substrate adjustment device, and the horizontal pitch angle is adjusted by the donor substrate adjustment device; the pneumatic adsorption fixture is provided with a laser window and an adsorption unit, the adsorption unit is used to adsorb the donor substrate, and the laser beam irradiates the donor on the donor substrate through the laser window; The piezoelectric platform is fixed in the receiving substrate adjustment device. The carrying surface in the piezoelectric platform is used to place the receiving substrate. The receiving substrate adjusts the horizontal pitch angle through the receiving substrate adjustment device so that the donor and the receiving substrate are relatively parallel along the horizontal plane. The three-dimensional displacement platform is used to control the three-dimensional movement of the donor substrate and the receiver substrate according to the laser parameters corresponding to the femtosecond laser and the preset processing trajectory. The piezoelectric platform is used to move vertically after the three-dimensional displacement platform has completed its movement, and to receive the transfer material induced by the laser beam through the receiving substrate when the gap between the receiving substrate and the donor meets the transfer conditions.

[0007] Optionally, the solid thin film material processing equipment may also include an imaging module; The imaging module includes: an illumination source, a first plano-convex lens, a beam splitter, a camera, and a tube lens; wherein, the imaging beam emitted by the illumination source is converged into a collimated beam by the first plano-convex lens, and the collimated beam is reflected by the beam splitter into the laser light path corresponding to the harmonic beam splitter and the objective lens; The illumination source is used to illuminate the processing area corresponding to the laser window, and the camera captures the image of the processing area after focusing through the telescope.

[0008] Optionally, the optical path module also includes a plano-concave lens and a second plano-convex lens; the plano-concave lens and the second plano-convex lens are sequentially arranged between the femtosecond laser and the harmonic beam splitter. After the laser beam is diverged by a plano-concave lens, it is then converged by a second plano-convex lens to obtain the expanded beam corresponding to the laser beam; the expanded beam is reflected to the objective lens by a harmonic beam splitter.

[0009] Optionally, the donor substrate adjustment device includes at least a first pitch adjustment platform and a second pitch adjustment platform; wherein, the first fixed end of the first pitch adjustment platform is fixed on the mounting plate of the three-dimensional displacement platform, the first adjustment end of the first pitch adjustment platform is fixed in the second fixed end of the second pitch adjustment platform, and the pneumatic adsorption clamp is fixed in the second adjustment end of the second pitch adjustment platform; the first adjustment axis corresponding to the first pitch adjustment platform and the second adjustment axis corresponding to the second pitch adjustment platform are perpendicular to each other; The receiving substrate adjustment device includes at least a third pitch adjustment stage and a fourth pitch adjustment stage; wherein, the third fixed end of the third pitch adjustment stage is fixed on the mounting plate of the three-dimensional displacement platform, the third adjustment end of the third pitch adjustment stage is fixed in the fourth fixed end of the fourth pitch adjustment stage, and the piezoelectric platform is fixed in the fourth adjustment end of the fourth pitch adjustment stage; the third adjustment axis corresponding to the third pitch adjustment stage and the fourth adjustment axis corresponding to the fourth pitch adjustment stage are perpendicular to each other.

[0010] Optionally, the donor substrate adjustment device may also include a shim block; The shim block is fixed between the first pitch adjustment platform and the three-dimensional displacement platform to raise the donor substrate adjustment device, so that the air pressure adsorption clamp in the donor substrate adjustment device is higher than the receiving substrate adjustment device.

[0011] Optionally, the receiving substrate adjustment device may also include an adapter plate; The adapter plate includes a fixed plate, a receiving plate, and a connecting plate; the fixed plate and the receiving plate are parallel to each other, and the fixed plate is higher than the receiving plate; the connecting plate is perpendicularly connected to both the fixed plate and the receiving plate. The fixed plate is fixedly connected to the fourth fixed end of the fourth pitch adjustment platform by bolts; the receiving plate is fixedly connected to the bottom surface of the piezoelectric platform by bolts.

[0012] Optionally, both the donor substrate adjustment device and the receiver substrate adjustment device are equipped with manual adjustment knobs. The manual adjustment knobs are used to adjust the horizontal pitch angle of the pneumatic adsorption clamp in the donor substrate adjustment device and the horizontal pitch angle of the receiver substrate in the receiver substrate adjustment device.

[0013] Optionally, the pneumatic adsorption fixture also includes a mounting base plate; wherein, the laser window is located at one end of the mounting base plate, and the other end of the mounting base plate is provided with a fixing hole, which is fixedly connected to the donor base plate adjustment device by bolts. The adsorption unit includes an airflow channel, airflow holes, a vacuum pipe, a process hole, and a connection port to a vacuum pump. The airflow channel is arranged along the edge of the laser window. The airflow holes are located in the airflow channel, connecting the airflow channel to the vacuum pipe. At least four airflow holes are provided in the airflow channel, symmetrically arranged around the laser window. One end of the airflow channel is connected to the vacuum pump connection port through the vacuum pipe. The other end of the vacuum pipe is connected to the process hole, and the process hole is sealed with a vacuum screw.

[0014] Optionally, the piezoelectric platform includes: a stage, a pressure sensor, a piezoelectric displacement stage, and an electrically controlled indexing head; The upper surface of the stage is the loading surface of the piezoelectric platform, used to place the receiving substrate; the pressure sensor is set on the lower surface of the stage; the moving surface of the stage and the piezoelectric displacement stage are fixedly connected by bolts; the fixed surface of the piezoelectric displacement stage is fixedly connected to the receiving substrate adjustment device by bolts; the electronically controlled indexing head is connected to the moving control end of the piezoelectric displacement stage, used to control the vertical movement of the moving surface.

[0015] In a second aspect, the present invention provides a method for controlling the processing of solid thin film materials, the method being applied to the solid thin film material processing equipment mentioned in the first aspect; the method includes: After the three-dimensional displacement platform reaches the preset processing position, the horizontal pitch angle of the donor substrate adjustment device and the receiver substrate adjustment device is adjusted so that the donor and receiver substrates are relatively parallel. The piezoelectric platform is controlled to rise vertically until the receiving substrate and the donor are in contact. Then, the piezoelectric platform is controlled to descend vertically, and the gap between the receiving substrate and the donor is obtained in real time. When the gap meets the transfer conditions, the femtosecond laser is controlled to emit a laser beam toward the donor, and the receiving substrate is controlled to receive the transfer material induced by the laser beam.

[0016] Thirdly, embodiments of the present invention also provide an electronic device, including a processor and a memory, wherein the memory stores computer-executable instructions that can be executed by the processor, and the processor executes the computer-executable instructions to implement the steps of the solid thin film material processing control method provided in the second aspect.

[0017] Fourthly, embodiments of the present invention also provide a storage medium storing computer-executable instructions, which, when invoked and executed by a processor, cause the processor to implement the steps of the solid thin film material processing control method provided in the second aspect.

[0018] This invention provides a solid thin film material processing apparatus and its control method. The apparatus utilizes a laser beam to convert a donor material into a transfer material. The donor material is fixed to a donor substrate, and the transfer material is deposited on a receiving substrate. The apparatus includes at least an optical path module and a processing module. The optical path module includes at least a femtosecond laser, a harmonic beam splitter, and an objective lens. The femtosecond laser emits a laser beam, the harmonic beam splitter reflects the laser beam to the objective lens, and the objective lens controls the focusing of the laser beam onto the processing module. The processing module includes at least a pneumatic adsorption fixture, a piezoelectric platform, a donor substrate adjustment device, a receiving substrate adjustment device, and a three-dimensional displacement platform. The donor substrate adjustment device and the receiving substrate adjustment device are fixed on the three-dimensional displacement platform. The pneumatic adsorption fixture is fixed within the donor substrate adjustment device, and the horizontal pitch angle of the donor substrate is adjusted by the donor substrate adjustment device. The pneumatic adsorption fixture has a laser window and an adsorption unit. The adsorption unit adsorbs the donor substrate, and the laser beam irradiates the donor material on the donor substrate through the laser window. A piezoelectric platform is fixed in a receiving substrate adjustment device. The loading surface of the piezoelectric platform is used to place the receiving substrate. The receiving substrate's horizontal pitch angle is adjusted by the receiving substrate adjustment device so that the donor and receiving substrate are relatively parallel along the horizontal plane. A three-dimensional displacement platform is used to control the three-dimensional movement of the donor and receiving substrates according to the laser parameters corresponding to the femtosecond laser and the preset processing trajectory. After the three-dimensional displacement platform completes its movement, the piezoelectric platform moves vertically and receives the laser-induced transfer material through the receiving substrate when the gap between the receiving substrate and the donor meets the transfer conditions. When transferring thin film materials using this solid thin film material processing equipment, the three-dimensional displacement platform is first controlled to reach the preset processing position. Then, the horizontal pitch angles of the donor substrate adjustment device and the receiver substrate adjustment device are controlled to make the donor and receiver substrates relatively parallel. Next, the piezoelectric platform is controlled to rise vertically until the receiver substrate and the donor are in contact. Then, the piezoelectric platform is controlled to descend vertically, and the gap between the receiver substrate and the donor is acquired in real time. When the gap meets the transfer conditions, the femtosecond laser is controlled to emit a laser beam towards the donor, and the receiver substrate is controlled to receive the laser-induced transfer material. The equipment uses two sets of adjustment devices to independently adjust and control the levelness of the donor and receiver substrates, making them absolutely horizontal and thus achieving high-precision relative parallelism. In addition, the equipment uses a pneumatic adsorption fixture to stably adsorb the donor substrate, and combines this with the vertical movement of the piezoelectric platform to achieve high-precision gap control between the donor and receiver substrates.

[0019] Other features and advantages of the present invention will be described in the following description, and in part will become apparent from the description, or understood by practicing the present invention. The purposes and other advantages of the present invention are realized and obtained by the structures particularly pointed out in the description, claims and drawings.

[0020] In order to make the above-mentioned objects, features and advantages of the present invention more obvious and easy to understand, preferred embodiments are given below and described in detail with reference to the accompanying drawings. Attached Figure Description

[0021] To more clearly illustrate the specific embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the specific embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of the present invention. For those skilled in the art, other drawings can be obtained from these drawings without creative effort.

[0022] Figure 1 This is a schematic diagram of the structure of a first type of solid thin film material processing equipment provided in an embodiment of the present invention; Figure 2 This is a schematic diagram of the structure of a second type of solid thin film material processing equipment provided in an embodiment of the present invention; Figure 3 This is a schematic diagram of the structure of a third type of solid thin film material processing equipment provided in an embodiment of the present invention; Figure 4 This is a schematic diagram of the structure of the pneumatic adsorption fixture provided in an embodiment of the present invention; Figure 5 This is a schematic diagram of the adsorption unit provided in an embodiment of the present invention; Figure 6 This is a schematic diagram of the structure of the piezoelectric platform provided in an embodiment of the present invention; Figure 7 A flowchart of a solid thin film material processing control method provided in an embodiment of the present invention; Figure 8 This is a schematic diagram of the structure of the fourth type of solid thin film material processing equipment provided in an embodiment of the present invention; Figure 9 A flowchart of another solid thin film material processing control method provided in an embodiment of the present invention; Figure 10 A schematic structural diagram of an electronic device provided by an embodiment of the present invention.

[0023] icon: 10-Optical path module; 11-Femtosecond laser; 12-Harmonic beam splitter; 13-Objective lens; 14-Planto-concave lens; 15-Second plano-convex lens; 20-Processing module; 21-Pneumatic adsorption fixture; 22-Piezoelectric platform; 23-Donor substrate adjustment device; 24-Receiving substrate adjustment device; 25-Three-dimensional displacement platform; 26-Donor substrate; 27-Donor; 28-Receiving substrate; 29-Mounting plate; 21a - Mounting substrate; 21b - Airflow channel; 21c - Airflow hole; 21d - Vacuum conduit; 21e - Process hole; 21f - Vacuum pump connection port; 21g - Laser window; 22a - Stage; 22b - Pressure sensor; 22c - Piezoelectric displacement stage; 22d - Electrically controlled indexing head; 23a - First pitch adjustment platform; 23b - Second pitch adjustment platform; 23c - Elevation block; 24a - Third pitch adjustment platform; 24b - Fourth pitch adjustment platform; 24c - Adapter plate; 24d - Fixing plate; 24e - Support plate; 24f - Connecting plate; 30-Imaging module; 31-Illumination source; 32-First plano-convex lens; 33-Beam splitter; 34-Camera; 35-Tube lens; 101 - Processor; 102 - Memory; 103 - Bus; 104 - Communication interface. Detailed Implementation

[0024] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions of the present invention will be clearly and completely described below in conjunction with the embodiments. Obviously, the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0025] Solid-state thin-film laser-induced forward transfer technology, with its non-contact processing, high precision, and multi-material compatibility, has demonstrated unique value in high-end manufacturing in the microelectronics field, particularly achieving significant breakthroughs in the printing of microspheres with a precision of hundreds of nanometers and the printing of micrometer-level wires, providing new solutions for cutting-edge fields such as integrated circuits, flexible electronics, and 3D packaging. In the printing of microspheres with a precision of hundreds of nanometers, this technology can achieve the deposition of arrayed single particles through ultrashort pulses of femtosecond lasers and high spatial resolution gap control. For example, submicrometer-sized gold, silver, or silica microspheres can be precisely transferred to silicon-based chips or flexible substrates for photonic crystal construction, integrated circuit defect repair, and the integration of sensitive units in high-sensitivity sensors. In the printing of micrometer-level wires, this technology, by optimizing parameters such as donor film thickness and laser energy, can achieve the direct patterning of metal wires (such as silver and copper) and the fabrication of complex electrode patterns on flexible curved surfaces. For example, silver wires can be arranged in the driving circuits of flexible displays, and vertical interconnect structures can be arranged in 3D electronic packaging. Furthermore, copper microwires printed using this technology have been applied to the manufacture of millimeter-wave antennas, driving the miniaturization of high-frequency radio frequency devices.

[0026] In the process of laser-induced forward transfer technology for solid-state thin films, the laser is incident from one side of the donor substrate, often using a femtosecond laser. The laser wavelength is selected based on the light absorption characteristics of the solid-state thin film material. The donor substrate is typically an optically transparent material (such as glass), and its function is to allow the laser to be transmitted to the solid-state thin film material below with almost no energy loss. The solid-state thin film to be transferred, often referred to as the donor, can be a metal (such as gold, copper, and aluminum), a conductive polymer, or an oxide, with a typical thickness of tens to hundreds of nanometers. After laser irradiation, the donor locally absorbs energy, undergoes thermal expansion or vaporization, forming bulges or plasma, which in turn generates stress waves. These stress waves and other dynamic effects propel the material in areas not directly irradiated by the laser away from the donor substrate and transfer it to the receiving substrate. The receiving substrate can be a flexible thin film, a circuit board, or glass. The receiving substrate and the donor can be naturally bonded or have a certain gap (usually within 10 µm) to achieve different transfer methods, such as imprinting with natural bonding or fly-through transfer with a certain gap. During the flight transfer process, the gap has a critical impact on the laser defocusing amount, the flight path of the transferred material, and the voxel deposition resolution.

[0027] High-precision laser-induced forward transfer of solid-state thin films requires two conditions: first, the gap between the donor and receiver substrates must be controlled within 10 µm; second, they must be as parallel as possible during continuous transfer. However, in existing laser-induced forward transfer technologies, the donor and receiver substrates are connected through various forms of fixed-height gap layers or simple mechanical structures. This cannot flexibly achieve precise control over the transition from a bonded state to maintaining a gap at the micrometer or even submicrometer level. Furthermore, the simple mechanical connection method cannot guarantee the relative parallelism of the donor and receiver substrates, failing to meet the requirements for high-precision and high-consistency transfer of solid-state thin-film materials. Therefore, this invention provides a solid-state thin-film material processing equipment and its control method. This equipment uses two sets of adjustment devices to independently adjust and control the levelness of the donor and receiver substrates, ensuring absolute horizontality and achieving high-precision relative parallelism. In addition, the equipment uses a pneumatic adsorption fixture to stably adsorb the donor substrate, and combines this with the vertical movement of a piezoelectric platform to achieve precise control over the transition from a bonded state to maintaining a gap at the micrometer or even submicrometer level, thus solving many problems existing in the prior art.

[0028] To facilitate understanding of this embodiment, a solid thin film material processing apparatus disclosed in this embodiment of the invention will first be described in detail. This solid thin film material processing apparatus uses a laser beam to convert a donor into the transfer material. The donor is fixed on a donor substrate, and the transfer material is deposited on a receiving substrate. For example... Figure 1 As shown, the solid thin film material processing equipment includes at least: an optical path module 10 and a processing module 20.

[0029] The optical path module 10 includes at least a femtosecond laser 11, a harmonic beam splitter 12, and an objective lens 13. The femtosecond laser 11 emits a laser beam, and the harmonic beam splitter 12 reflects the laser beam to the objective lens 13. The objective lens 13 focuses the laser beam and sends it to the processing module 20. The laser beam emitted by the femtosecond laser 11 is reflected by the harmonic beam splitter 12 and focused by the objective lens 13 at the interface between the donor substrate 26 and the donor 27 to form a spot for laser-induced transfer.

[0030] The processing module 20 includes at least: a pneumatic adsorption fixture 21, a piezoelectric platform 22, a donor substrate adjustment device 23, a receiver substrate adjustment device 24, and a three-dimensional displacement platform 25. The donor substrate adjustment device 23 and the receiver substrate adjustment device 24 are fixed on the three-dimensional displacement platform 25. The pneumatic adsorption fixture 21 is fixed in the donor substrate adjustment device 23, and its horizontal pitch angle is adjusted by the donor substrate adjustment device 23. The pneumatic adsorption fixture 21 is provided with a laser window and an adsorption unit. The adsorption unit is used to adsorb the donor substrate, and the laser beam irradiates the donor 27 on the donor substrate 26 through the laser window.

[0031] The piezoelectric platform 22 is fixed in the receiving substrate adjustment device 24. The carrying surface in the piezoelectric platform 22 is used to place the receiving substrate 28. The receiving substrate 28 adjusts the horizontal pitch angle through the receiving substrate adjustment device 24 so that the donor substrate 26 and the receiving substrate 28 are relatively parallel along the horizontal plane.

[0032] The three-dimensional displacement platform 25 is used to control the donor substrate 26 and the receiver substrate 28 to move in three dimensions according to the laser parameters corresponding to the femtosecond laser and the preset processing trajectory; the piezoelectric platform 22 is used to move vertically after the three-dimensional displacement platform 25 completes its movement, and to receive the corresponding transfer material induced by the laser beam through the receiver substrate 28 when the gap between the receiver substrate 28 and the donor 27 meets the transfer conditions.

[0033] Optional, such as Figure 2 As shown, the solid thin film material processing equipment also includes an imaging module 30; the imaging module 30 includes: an illumination source 31, a first plano-convex lens 32, a beam splitter 33, a camera 34, and a telescope 35; wherein, the imaging beam emitted by the illumination source 31 is converged into a collimated beam by the first plano-convex lens 32, and the collimated beam is reflected by the beam splitter 33 into the laser optical path corresponding to the harmonic beam splitter 12 and the objective lens 13; the imaging optical path corresponding to the camera 34 and the telescope 35 is perpendicular to the illumination direction of the imaging beam, and the imaging optical path coincides with the laser optical path through the beam splitter 33. The illumination source 31 is used to illuminate the processing area corresponding to the laser window, and the camera 34 acquires the image corresponding to the processing area after being focused by the telescope 35. The illumination light emitted by the illumination source 31 is first collimated by the first plano-convex lens 32, then partially reflected by the beam splitter 33 and passed through the harmonic beam splitter 12, and finally focused on the processing area by the objective lens 13. The scattered illumination light in the processing area can be reversibly returned, and then passed through the objective lens 13, the harmonic beam splitter 12 and the beam splitter 33 in sequence. Finally, it is focused by the tube lens 35 and imaged on the camera 34, and the processing condition is displayed through the image.

[0034] The optical path module 10 also includes a plano-concave lens 14 and a second plano-convex lens 15; the plano-concave lens 14 and the second plano-convex lens 15 are sequentially disposed between the femtosecond laser 11 and the harmonic beam splitter 12. The laser beam is diverged by the plano-concave lens 14 and then converged by the second plano-convex lens 15 to obtain the expanded beam corresponding to the laser beam; the expanded beam is reflected by the harmonic beam splitter 12 to the objective lens 13. The plano-concave lens 14 and the second plano-convex lens 15 are mainly used to expand the laser beam.

[0035] Optional, such as Figure 3As shown, the donor substrate adjustment device 23 includes at least a first pitch adjustment platform 23a and a second pitch adjustment platform 23b; wherein, the first fixed end of the first pitch adjustment platform 23a is fixed in the mounting plate 29 of the three-dimensional displacement platform 25, the first adjustment end of the first pitch adjustment platform 23a is fixed in the second fixed end of the second pitch adjustment platform 23b, and the pneumatic adsorption clamp 21 is fixed in the second adjustment end of the second pitch adjustment platform 23b; the first adjustment axis corresponding to the first pitch adjustment platform 23a and the second adjustment axis corresponding to the second pitch adjustment platform 23b are perpendicular to each other; in actual scenarios, the first pitch adjustment platform 23a and the second pitch adjustment platform 23b are installed perpendicular to each other.

[0036] The receiving substrate adjustment device 24 includes at least a third pitch adjustment stage 24a and a fourth pitch adjustment stage 24b. The third fixed end of the third pitch adjustment stage 24a is fixed in the mounting plate 29 of the three-dimensional displacement platform 25, and the third adjusting end of the third pitch adjustment stage 24a is fixed in the fourth fixed end of the fourth pitch adjustment stage 24b. The piezoelectric platform 22 is fixed in the fourth adjusting end of the fourth pitch adjustment stage 24b. The third adjusting axis corresponding to the third pitch adjustment stage 24a and the fourth adjusting axis corresponding to the fourth pitch adjustment stage 24b are perpendicular to each other. In actual scenarios, the third pitch adjustment stage 24a and the fourth pitch adjustment stage 24b are installed perpendicular to each other.

[0037] Optionally, the donor substrate adjustment device 23 further includes a shim block 23c. The shim block 23c is fixed between the first pitch adjustment stage 23a and the three-dimensional displacement platform 25 to raise the donor substrate adjustment device 23, so that the pneumatic adsorption clamp 21 in the donor substrate adjustment device 23 is higher than the receiving substrate adjustment device 24.

[0038] Optionally, the receiving substrate adjustment device 24 further includes an adapter plate 24c. The adapter plate 24c includes a fixing plate 24d, a receiving plate 24e, and a connecting plate 24f; wherein the fixing plate 24d and the receiving plate 24e are parallel to each other, and the fixing plate 24d is higher than the receiving plate 24e; the connecting plate 24f is perpendicularly connected to both the fixing plate 24d and the receiving plate 24e. The fixing plate 24d is fixedly connected to the fourth fixed end of the fourth pitch adjustment platform 24b by bolts; the receiving plate 24e is fixedly connected to the bottom surface of the piezoelectric platform 22 by bolts. In simple terms, the adapter plate 24c has a Z-shaped cross-section, with the top fixing plate 24d fixed to the fourth pitch adjustment platform 24b, and the bottom receiving plate 24e fixed to the piezoelectric platform 22. The adapter plate 24c reduces the height of the piezoelectric platform 22, trading lateral space for longitudinal space, thus reducing the overall height and increasing the vertical adjustment range.

[0039] Optionally, both the donor substrate adjustment device and the receiver substrate adjustment device are equipped with manual adjustment knobs. The manual adjustment knobs are used to adjust the horizontal pitch angle of the pneumatic adsorption clamp in the donor substrate adjustment device and the horizontal pitch angle of the receiver substrate in the receiver substrate adjustment device.

[0040] A schematic diagram of the camera structure of the air pressure adsorption fixture 21 is shown below. Figure 4 As shown, optionally, the pneumatic adsorption fixture 21 also includes a mounting base plate 21a; wherein, the laser window 21g is located at one end of the mounting base plate 21a, and the other end of the mounting base plate 21a is provided with a fixing hole, which is fixedly connected to the donor base plate adjustment device 23 (specifically, the second adjustment end of the second pitch adjustment stage 23b) by bolts. Figure 4 The first pitch adjustment platform 23a and the second pitch adjustment platform 23b, which are perpendicular to each other, can be clearly seen. They are used to adjust the level of the air pressure adsorption fixture 21 so that the donor substrate 26 can remain absolutely level on the horizontal plane.

[0041] The adsorption unit in the pressure adsorption fixture 21 is specifically as follows: Figure 5 As shown, the adsorption unit includes an airflow channel 21b, airflow holes 21c, a vacuum pipe 21d, a process hole 21e, and a vacuum pump connection port 21f. The airflow channel 21b is arranged along the edge of the laser window 21g. The airflow holes 21c are located in the airflow channel 21b, and at least four airflow holes 21c are provided in the airflow channel 21b, symmetrically arranged around the laser window 21g. The airflow channel 21b is connected to the vacuum pump connection port 21f through one end of the vacuum pipe 21d. The other end of the vacuum pipe 21d is connected to the process hole 21e, and the process hole 21e is sealed with a vacuum screw. It is worth mentioning that... Figure 5 The area with the diagonal background line is an internal diagram of the adsorption unit, designed to better illustrate the vacuum channel 21d, process hole 21e, and vacuum pump connection port 21f contained within. After evacuating the adsorption unit through the vacuum pump connection port 21f, the donor substrate 26 can be adsorbed through the airflow channel 21b.

[0042] like Figure 6 As shown, optionally, the piezoelectric platform 22 includes: a stage 22a, a pressure sensor 22b, a piezoelectric displacement stage 22c, and an electrically controlled indexing head 22d. The upper surface of the stage 22a serves as the loading surface of the piezoelectric platform 22, used to place the receiving substrate 28; the pressure sensor 22b is disposed on the lower surface of the stage 22a; the moving surfaces of the stage 22a and the piezoelectric displacement stage 22c are fixedly connected by bolts; the fixed surface of the piezoelectric displacement stage 22c is fixedly connected to the receiving substrate adjustment device 24 by bolts; the electrically controlled indexing head 22d is connected to the movement control end of the piezoelectric displacement stage 22c, used to control the vertical movement of the moving surface.

[0043] from Figure 6 It can be seen that the adapter plate 24c is fixedly connected to the fourth pitch adjustment platform 24b by bolts, and the fourth pitch adjustment platform 24b is perpendicular to the third pitch adjustment platform 24a. It is used to adjust the level of the platform 22a so that the receiving substrate 28 placed in the platform 22a can remain absolutely level on the horizontal plane.

[0044] The receiving substrate 28 can be placed at a suitable position on the stage 22a according to process requirements, and its vertical lifting motion is controlled by the piezoelectric displacement stage 22c and the high-precision electronically controlled indexing head 22d to adjust the gap between the donor 27 and the receiving substrate 28. The pressure of the receiving substrate 28 on the stage 22a is monitored in real time by the pressure sensor 22b. If the sensor value changes significantly and exceeds the threshold, it is determined that the donor 27 and the receiving substrate 28 are in a contact state.

[0045] In this embodiment, the solid thin film material processing equipment uses a pneumatic adsorption fixture whose corresponding adsorption area is connected to a vacuum pipe via airflow holes in an airflow channel, and then to a vacuum pump, to achieve negative pressure adsorption of the donor substrate. Furthermore, this embodiment incorporates a high-precision pressure feedback piezoelectric platform to control the receiving substrate's high-precision vertical movement. In practical scenarios, a 20 nm resolution electronically controlled indexing head and a 300 µm stroke piezoelectric displacement stage can be used for high-precision vertical movement control of the receiving substrate. A pressure sensor is employed to detect the pressure state of the substrate stage, enabling pressure feedback control. The pneumatic adsorption fixture and piezoelectric platform work together to achieve precise control of the donor and receiving substrates, moving them from a bonded state to maintaining a micrometer-level or even submicrometer-level gap. Additionally, to ensure relatively consistent substrate horizontality, the solid thin film material processing equipment in this embodiment uses two sets of pitch adjustment stages to independently adjust and control the horizontality of the donor and receiving substrates, ensuring they are absolutely horizontal and thus relatively parallel.

[0046] As can be seen from the solid thin film material processing equipment mentioned in the above embodiments, the equipment uses two sets of adjustment devices to independently adjust and control the levelness of the donor substrate and the receiver substrate, making them absolutely level and thus achieving high-precision relative parallelism; in addition, the equipment uses a pneumatic adsorption clamp to stably adsorb the donor substrate, and combines the vertical movement of the piezoelectric platform to achieve high-precision gap control between the donor and receiver substrates, thereby solving many problems existing in the prior art.

[0047] This invention provides a method for controlling the processing of solid thin film materials. This method is applied to the solid thin film material processing equipment mentioned in the above embodiments. The executing entity of this method can be an electronic device such as a computer or server. The structural diagram of the solid thin film material processing equipment in this case is shown below. Figure 7As shown, the electronic device is connected to the femtosecond laser, piezoelectric platform, and three-dimensional displacement platform in the solid thin film material processing equipment. Based on this, the method is as follows: Figure 8 Shown, including: Step S801: After controlling the three-dimensional displacement platform to reach the preset processing position, adjust the horizontal pitch angle of the donor substrate adjustment device and the receiver substrate adjustment device so that the loading surfaces of the donor and receiver substrates are relatively parallel. Step S802: Control the piezoelectric platform to rise vertically until the receiving substrate and the donor in the piezoelectric platform are in contact. Then control the piezoelectric platform to fall vertically and obtain the gap between the receiving substrate and the donor in real time. Step S803: When the gap meets the transfer conditions, control the femtosecond laser to emit a laser beam toward the donor, and control the receiving substrate to receive the transfer material induced by the laser beam.

[0048] In the specific implementation process, the above control process first requires adjusting the horizontal angles of the first and second pitch adjustment stages to adjust the levelness of the pneumatic adsorption fixture, ensuring that the donor substrate is absolutely horizontal. Then, the horizontal angles of the third and fourth pitch adjustment stages are adjusted to adjust the levelness of the stage, ensuring that the receiving substrate is absolutely horizontal.

[0049] Then, a pneumatic adsorption fixture is used to hold the donor substrate with the donor side facing down. A three-dimensional displacement platform, in conjunction with the imaging module, is used to vertically adjust the height of the donor substrate, focusing the laser at the interface between the donor substrate and the donor. Finally, the receiving substrate is placed in the appropriate position on the stage according to process requirements.

[0050] Subsequently, a piezoelectric displacement stage and a high-precision electronically controlled indexing head are used to control the receiving substrate to rise slowly, and the pressure between the donor and the receiving substrate is monitored in real time by a pressure sensor, so that the donor and the receiving substrate are in a close fit.

[0051] Then, a piezoelectric displacement stage and an electronically controlled indexing head are used to control the vertical lifting motion in order to adjust and obtain the gap between the donor and receiver substrates in real time.

[0052] Finally, when the gap meets the transfer conditions, the femtosecond laser is controlled to emit a laser beam toward the donor. After the laser is absorbed by the donor, some of the donor material undergoes a phase transition or forms plasma, creating bulges inside the donor and forming stress waves. These stress waves push the material not directly affected by the laser beam to deposit on the receiving substrate, completing the laser transfer.

[0053] The above process can be used as a reference. Figure 9 The flowchart of another solid thin film material processing control method shown is not described in detail here.

[0054] As can be seen from the solid thin film material processing control method mentioned in the above embodiments, the solid thin film material processing equipment used in this method uses two sets of adjustment devices to independently adjust and control the level of the donor substrate and the receiver substrate, so that they are absolutely level and thus achieve high-precision relative parallelism; in addition, the equipment uses a pneumatic adsorption clamp to stably adsorb the donor substrate, and combines the vertical movement of the piezoelectric platform to achieve high-precision gap control between the donor and receiver substrates.

[0055] This embodiment also provides an electronic device, the structural schematic diagram of which is shown below. Figure 10 As shown, the electronic device is provided with a processing unit, which includes a processor 101 and a memory 102; wherein, the memory 102 is used to store one or more computer instructions, which are executed by the processor to implement the steps of the above-described solid thin film material processing control method.

[0056] Figure 10 The processing unit in the electronic device shown also includes a bus 103 and a communication interface 104. The processor 101, the communication interface 104 and the memory 102 are connected through the bus 103.

[0057] The memory 102 may include high-speed random access memory, and may also include unstable memory, such as at least one disk storage device. The bus 103 may be an ISA bus, PCI bus, or EISA bus, etc. The bus can be divided into address bus, data bus, control bus, etc. For ease of representation, in... Figure 10 The symbol is represented by a single double-headed arrow, but this does not mean that there is only one bus or one type of bus.

[0058] The communication interface 104 is used to connect to at least one user terminal and other network units through a network interface, and to send encapsulated IPv4 packets or IPv4 packets to the user terminal through the network interface.

[0059] Processor 101 may be an integrated circuit chip with signal processing capabilities. In implementation, each step of the above method can be completed by integrated logic circuits in the hardware of processor 101 or by instructions in software form. Processor 101 can be a general-purpose processor, including a central processing unit (CPU), network processor, etc.; it can also be a digital signal processor (DSP), application-specific integrated circuit (ASIC), field-programmable gate array (FPGA), or other programmable logic devices, discrete gate or transistor logic devices, or discrete hardware components. The storage medium is located in memory 102. Processor 101 reads information from memory 102 and, in conjunction with its hardware, completes the steps of the method described in the foregoing embodiments.

[0060] This invention also provides a storage medium storing a computer program, which, when executed by a processor, performs the steps of the solid thin film material processing control method described in the foregoing embodiments.

[0061] In the several embodiments provided in this application, it should be understood that the disclosed systems, apparatuses, devices, and methods can be implemented in other ways. The system embodiments described above are merely illustrative. For example, the division of units is only a logical functional division, and in actual implementation, there may be other division methods. Furthermore, multiple units or components may be combined or integrated into another system, or some features may be ignored or not executed. Additionally, the coupling or direct coupling or communication connection shown or discussed may be through some communication interfaces; the indirect coupling or communication connection between devices or units may be electrical, mechanical, or other forms.

[0062] The units described as separate components may or may not be physically separate. The components shown as units may or may not be physical units; that is, they may be located in one place or distributed across multiple network units. Some or all of the units can be selected to achieve the purpose of this embodiment according to actual needs.

[0063] In addition, each functional unit in each embodiment of the present invention may be integrated into one processing unit, or each unit may exist physically separately, or two or more units may be integrated into one unit.

[0064] If the aforementioned functions are implemented as software functional units and sold or used as independent products, they can be stored in a processor-executable, non-volatile, computer-readable storage medium. Based on this understanding, the technical solution of this invention, essentially, or the part that contributes to the prior art, or a portion of the technical solution, can be embodied in the form of a software product. This computer software product is stored in a storage medium and includes several instructions to cause a computer device (which may be a personal computer, server, or network device, etc.) to execute all or part of the steps of the methods described in the various embodiments of this invention. The aforementioned storage medium includes various media capable of storing program code, such as USB flash drives, portable hard drives, read-only memory, random access memory, magnetic disks, or optical disks.

[0065] Finally, it should be noted that the above-described embodiments are merely specific implementations of the present invention, used to illustrate the technical solutions of the present invention, and not to limit it. The scope of protection of the present invention is not limited thereto. Although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that any person skilled in the art can still modify or easily conceive of changes to the technical solutions described in the foregoing embodiments within the technical scope disclosed in the present invention, or make equivalent substitutions for some of the technical features; and these modifications, changes, or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present invention, and should all be covered within the scope of protection of the present invention. Therefore, the scope of protection of the present invention should be determined by the scope of the claims.

Claims

1. A solid thin film material processing device, characterized in that, The solid thin film material processing equipment uses a laser beam to convert the donor into a transfer material, the donor is fixed on a donor substrate, and the transfer material is deposited on a receiving substrate; The solid thin film material processing equipment includes at least: an optical path module and a processing module; The optical path module includes at least a femtosecond laser, a harmonic beam splitter, and an objective lens; the femtosecond laser is used to emit the laser beam, the harmonic beam splitter is used to reflect the laser beam to the objective lens; and the objective lens is used to control the focusing of the laser beam onto the processing module. The processing module includes at least: a pneumatic adsorption fixture, a piezoelectric platform, a donor substrate adjustment device, a receiver substrate adjustment device, and a three-dimensional displacement platform; the donor substrate adjustment device and the receiver substrate adjustment device are fixed on the three-dimensional displacement platform, the pneumatic adsorption fixture is fixed in the donor substrate adjustment device, and the horizontal pitch angle is adjusted by the donor substrate adjustment device; the pneumatic adsorption fixture is provided with a laser window and an adsorption unit, the adsorption unit is used to adsorb the donor substrate, and the laser beam irradiates the donor on the donor substrate through the laser window. The piezoelectric platform is fixed in the receiving substrate adjustment device. The loading surface of the piezoelectric platform is used to place the receiving substrate. The receiving substrate adjusts the horizontal pitch angle through the receiving substrate adjustment device so that the donor substrate and the receiving substrate are relatively parallel to each other along the horizontal plane. The three-dimensional displacement platform is used to control the donor substrate and the receiver substrate to move in three dimensions according to the laser parameters corresponding to the femtosecond laser and the preset processing trajectory. The piezoelectric platform is used to control the receiving substrate to move vertically after the three-dimensional displacement platform has completed its movement, and to receive the transfer material induced and transferred by the laser beam through the receiving substrate when the gap between the receiving substrate and the donor meets the transfer conditions.

2. The solid thin film material processing equipment according to claim 1, characterized in that, The solid thin film material processing equipment also includes an imaging module; The imaging module includes: an illumination source, a first plano-convex lens, a beam splitter, a camera, and a tube lens; wherein, the imaging beam emitted by the illumination source is converged into a collimated beam by the first plano-convex lens, and the collimated beam is reflected by the beam splitter to the laser path corresponding to the harmonic beam splitter and the objective lens; The illumination source is used to illuminate the processing area corresponding to the laser window, and the camera captures the image corresponding to the processing area after focusing through the telescope.

3. The solid thin film material processing equipment according to claim 1, characterized in that, The optical path module further includes a plano-concave lens and a second plano-convex lens; the plano-concave lens and the second plano-convex lens are sequentially disposed between the femtosecond laser and the harmonic beam splitter. The laser beam is diverged by the plano-concave lens and then converged by the second plano-convex lens to obtain the expanded beam corresponding to the laser beam; the expanded beam is reflected to the objective lens by the harmonic beam splitter.

4. The solid thin film material processing equipment according to claim 1, characterized in that, The donor substrate adjustment device includes at least a first pitch adjustment platform and a second pitch adjustment platform; wherein, the first fixed end of the first pitch adjustment platform is fixed to the mounting plate of the three-dimensional displacement platform, the first adjustment end of the first pitch adjustment platform is fixed in the second fixed end of the second pitch adjustment platform, and the pneumatic adsorption clamp is fixed to the second adjustment end of the second pitch adjustment platform; the first adjustment axis corresponding to the first pitch adjustment platform and the second adjustment axis corresponding to the second pitch adjustment platform are perpendicular to each other; The receiving substrate adjustment device includes at least a third pitch adjustment stage and a fourth pitch adjustment stage; wherein, the third fixed end of the third pitch adjustment stage is fixed to the mounting plate of the three-dimensional displacement platform, the third adjustment end of the third pitch adjustment stage is fixed in the fourth fixed end of the fourth pitch adjustment stage, and the piezoelectric platform is fixed to the fourth adjustment end of the fourth pitch adjustment stage; the third adjustment axis corresponding to the third pitch adjustment stage and the fourth adjustment axis corresponding to the fourth pitch adjustment stage are perpendicular to each other.

5. The solid thin film material processing equipment according to claim 4, characterized in that, The donor substrate adjustment device also includes a shim block; The shim block is fixed between the first pitch adjustment platform and the three-dimensional displacement platform to raise the donor substrate adjustment device, so that the air pressure adsorption clamp in the donor substrate adjustment device is higher than the receiving substrate adjustment device.

6. The solid thin film material processing equipment according to claim 4, characterized in that, The receiving substrate adjustment device also includes an adapter plate; The adapter plate includes a fixing plate, a receiving plate, and a connecting plate; wherein the fixing plate and the receiving plate are parallel to each other, and the fixing plate is higher than the receiving plate; the connecting plate is perpendicularly connected to the fixing plate and the receiving plate respectively. The fixing plate is fixedly connected to the fourth fixed end of the fourth pitch adjustment platform by bolts; the receiving plate is fixedly connected to the bottom surface of the piezoelectric platform by bolts.

7. The solid thin film material processing equipment according to claim 1, characterized in that, Both the donor substrate adjustment device and the receiver substrate adjustment device are equipped with manual adjustment knobs, which are used to adjust the horizontal pitch angle of the pneumatic adsorption fixture in the donor substrate adjustment device and the receiver substrate in the receiver substrate adjustment device.

8. The solid thin film material processing equipment according to claim 1, characterized in that, The pneumatic adsorption fixture also includes a mounting base plate; wherein, the laser window is located at one end of the mounting base plate, and the other end of the mounting base plate is provided with a fixing hole, which is fixedly connected to the donor base plate adjustment device by bolts. The adsorption unit includes an airflow groove, an airflow hole, a vacuum pipe, a process hole, and a connection port to a vacuum pump. The airflow groove is positioned along the edge of the laser window. The airflow hole is located within the airflow groove, connecting the airflow groove to the vacuum pipe. At least four airflow holes are provided in the airflow groove, symmetrically arranged around the laser window. One end of the airflow groove is connected to the vacuum pump connection port via the vacuum pipe. The other end of the vacuum pipe is connected to the process hole, which is sealed with a vacuum screw.

9. The solid thin film material processing equipment according to claim 1, characterized in that, The piezoelectric platform includes: a stage, a pressure sensor, a piezoelectric displacement stage, and an electrically controlled indexing head; The upper surface of the stage is the loading surface of the piezoelectric platform, used to place the receiving substrate; the pressure sensor is disposed on the lower surface of the stage; the stage and the moving surface of the piezoelectric displacement stage are fixedly connected by bolts; the fixed surface of the piezoelectric displacement stage is fixedly connected to the receiving substrate adjustment device by bolts; the electronically controlled indexing head is connected to the moving control end of the piezoelectric displacement stage, used to control the moving surface to move vertically.

10. A method for controlling the processing of solid thin film materials, characterized in that, The method is applied to the solid thin film material processing equipment mentioned in any one of claims 1 to 9; the method includes: After controlling the three-dimensional displacement platform to reach the preset processing position, the horizontal pitch angle of the donor substrate adjustment device and the receiver substrate adjustment device is adjusted so that the donor and the receiver substrate are relatively parallel. The piezoelectric platform is controlled to rise vertically until the receiving substrate and the donor are in contact. Then, the piezoelectric platform is controlled to descend vertically, and the gap between the receiving substrate and the donor is acquired in real time. When the gap meets the transfer conditions, the femtosecond laser is controlled to emit a laser beam toward the donor, and the receiving substrate is controlled to receive the transfer material induced by the laser beam.

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