Ultrasonic and detection device capable of completely stripping wafer and stripping method

Abstract

The invention belongs to the technical field of semiconductor processing equipment, and particularly relates to an ultrasonic and detection device capable of completely stripping a wafer and a stripping method, the ultrasonic and detection device comprises a modification module, a crystal ingot transfer module, a motion adsorption platform, a visual detection module, an ultrasonic module and a crystal ingot ultrasonic transmission module; the crystal ingot transfer module comprises a crystal ingot transfer X-direction module, a transfer suction cup and a transfer base plate, the movement adsorption platform comprises a supporting base plate, an X-direction movement module, a Y-direction movement module, a Z-direction movement module, an adapter plate, a mechanical sensor, a wafer suction cup and a Y-direction movement guide rail, and the ultrasonic module comprises an ultrasonic cover, an ultrasonic vibrator, a water outlet and a water inlet. The crystal ingot ultrasonic transmission module comprises an ultrasonic Z-direction movement module, a crystal ingot ultrasonic movement supporting adsorption plate, an ultrasonic X-direction movement module and an ultrasonic supporting frame. The structure and method that the ultrasonic pool is matched with the ultrasonic liquid are adopted for ultrasonic treatment, so that the modified layer is stressed more uniformly and stably, and the ultrasonic process is promoted to be stable and reliable.

Description

Technical Field

[0001] This invention belongs to the field of semiconductor processing equipment technology, and particularly relates to a method and apparatus for ensuring the complete separation of laser-modified wafers through ultrasonic action and detection methods. Specifically, it is an ultrasonic and detection apparatus and a wafer-removal method that can completely peel off wafers. Background Technology

[0002] Third-generation semiconductors, represented by silicon carbide and gallium nitride, have become a core driving force for the energy revolution and industrial upgrading due to their wide bandgap, high breakdown field strength, high temperature resistance, and high frequency performance. Technological iteration and breakthroughs in domestic production will further reduce manufacturing costs, propelling China's third-generation semiconductor industry towards a new stage of "comprehensive leadership."

[0003] In semiconductor manufacturing processes, cutting ingots into wafers is a core process that directly affects the yield of subsequent processes. However, due to the extremely high hardness and brittleness of third-generation semiconductors, traditional multi-wire dicing technology faces problems such as low dicing efficiency, high material loss, and numerous wafer cracks, which significantly increases product costs.

[0004] To overcome the bottlenecks of traditional cutting, laser-modified exfoliation technology is rapidly developing. The core principle of laser-modified exfoliation is to form a controllable laser-modified layer (such as amorphization, microcracks, or thermal stress layer) at a specific depth within the material using a laser. By utilizing the differences in physical and chemical properties between the modified layer and the substrate material, non-destructive separation of the wafer can be achieved through mechanical, thermal stress, or other auxiliary methods. This technology is a key path for cost reduction and efficiency improvement in the third-generation semiconductor industry.

[0005] As laser-modified exfoliation technology is an emerging technology, bottlenecks still exist in its industrial application, preventing equipment from operating fully automatically. On the one hand, the immaturity of the laser modification process leads to both excessive and insufficient laser application, resulting in incomplete exfoliation during subsequent processes. On the other hand, the unreliability of exfoliation techniques (cold exfoliation, direct mechanical exfoliation, etc.) results in fragmentation, hindering the large-scale mass production of laser exfoliation technology. Summary of the Invention

[0006] In order to solve the problem that the existing laser-modified stripping technology is unreliable and easily leads to fragmentation or failure to strip the wafer, the present invention provides an ultrasonic and detection device and stripping method that can completely strip the wafer.

[0007] To achieve the above objectives, the technical solution adopted is as follows: An ultrasonic and detection device capable of completely peeling off wafers, comprising: a refining module, a wafer transfer module, a motion adsorption platform, an ultrasonic module, and a wafer ultrasonic transmission module; the wafer transfer module includes a wafer transfer X-axis module, a transfer suction cup, and a transfer pad, wherein the wafer transfer X-axis module is fixed on the transfer pad, and the transfer suction cup is fixed on the wafer transfer X-axis module; the motion adsorption platform includes a support pad, an X-axis motion module, a Y-axis motion module, a Z-axis motion module, an adapter plate, a force sensor, a wafer suction cup, and a Y-axis motion guide rail, wherein the Y-axis motion module and the Y-axis motion guide rail are fixed on the support pad on the left and right sides respectively, the left column of the gantry is connected to the Y-axis motion module, the right column of the gantry is connected to the Y-axis motion guide rail, the X-axis motion module is fixed on the gantry, and the Z-axis motion module is fixed on the X-axis motion module. The adapter plate is used to connect the Z-axis motion module and the force sensor. The crystal suction cup is fixed on the force sensor. The ultrasonic module includes an ultrasonic cover, an ultrasonic transducer, a drain port, and a water inlet. The ultrasonic module is mounted on the support plate and is located in the area between the Y-axis motion module and the Y-axis motion guide rail. The ultrasonic transducer is placed inside the ultrasonic cover. The ultrasonic cover is provided with a water inlet and a drain port. The drain port is connected to the water outlet position of the drain port on the support plate. The crystal ingot ultrasonic transmission module includes an ultrasonic Z-axis motion module, a crystal ingot ultrasonic motion support adsorption plate, an ultrasonic X-axis motion module, and an ultrasonic support frame. The ultrasonic support frame is fixed on the support plate. The ultrasonic X-axis motion module is fixed on the ultrasonic support frame. The ultrasonic Z-axis motion module is fixed on the ultrasonic X-axis motion module. The crystal ingot ultrasonic motion support adsorption plate is fixed on the ultrasonic Z-axis motion module. The crystal ingot ultrasonic transmission module is located in front of the ultrasonic module on the support plate.

[0008] The above-mentioned method for removing wafers using an ultrasonic and detection device includes the following steps: The properly ground ingot is placed on the adsorption processing table of the modification module, and the corresponding process parameters are matched according to the characteristics of the ingot to complete the laser modification process. The transfer suction cup of the crystal ingot transfer module moves to the loading position. The robot arm of the modification module places the modified crystal ingot on the transfer suction cup of the loading position. The negative pressure is turned on to adsorb the crystal ingot and ensure that the position remains unchanged during the movement. The crystal ingot transfer X-axis module drives the transfer suction cup and the crystal ingot to the unloading position, waiting for the next module to grab the crystal ingot. The ultrasonic motion support adsorption plate of the crystal ingot transmission module moves to the underside of the crystal ingot on the transfer suction cup of the crystal ingot transfer module. The ultrasonic motion support adsorption plate of the crystal ingot can move in the Z and Y directions. When it moves to the underside of the crystal ingot, the adsorption plate moves in the Y direction. After it moves to the position, the negative pressure is activated to adsorb the crystal ingot. Then it moves in the Z direction to drive the crystal ingot away from the transfer suction cup. Then it moves in the X direction to the ultrasonic position. After moving to the ultrasonic position, it moves in the Z direction, driving the crystal ingot into the ultrasonic module; In the ultrasonic module, ultrasonic liquid is filled, and the frequency, power, and duration of the ultrasonic waves are set according to the process parameters of the modification module and the information of the ingot. After the ultrasound is completed, the ultrasonic motion support adsorption plate of the crystal ingot moves in the Z direction until it reaches the peeling position. The motion adsorption platform moves in the XYZ direction, driving the wafer chuck to move precisely above the crystal ingot and then descending. Once the set value of the force sensor is reached, the Z-direction movement stops, and the wafer chuck is put under negative pressure and moves upward in the Z direction. During the ascent, the mechanical sensor continuously monitors the magnitude of the peeling force. The Z-axis ascent can only continue if the magnitude of the peeling force is less than the design value; otherwise, the movement will stop. When the monitoring value meets the requirements, the separation of the wafer and the ingot is achieved. The wafer suction cup drives the wafer and the ingot to move ultrasonically. The support adsorption plate drives the stripped ingot to move to the unloading position. The device issues an audible and visual prompt that the process is completed. The process personnel take away the wafer and the ingot, completing one process flow. If the monitoring value meets the requirements and separation of the wafer and ingot has not been achieved, continue moving upwards to perform the peeling operation; When the monitored value does not meet the requirements, the Z-axis upward movement is stopped, and the reverse process of the above process is performed. The ingot is moved back to the refining module for another refining process. Then, the above process is repeated until the complete stripping is achieved.

[0009] The aforementioned ultrasonic and inspection device capable of completely stripping wafers also includes a visual inspection module. The visual inspection module includes a light source, a camera, and a camera support frame. The camera support frame is used to support and fix the camera and the light source. The visual inspection module is fixed on a support plate and located below the gantry.

[0010] The above-mentioned method for removing wafers using an ultrasonic and detection device includes the following steps: The properly ground ingot is placed on the adsorption processing table of the modification module, and the corresponding process parameters are matched according to the characteristics of the ingot to complete the laser modification process. The transfer suction cup of the crystal ingot transfer module moves to the loading position. The robot arm of the modification module places the modified crystal ingot on the transfer suction cup of the loading position. The negative pressure is turned on to adsorb the crystal ingot and ensure that the position remains unchanged during the movement. The crystal ingot transfer X-axis module drives the transfer suction cup and the crystal ingot to the unloading position, waiting for the next module to grab the crystal ingot. The ultrasonic motion support adsorption plate of the crystal ingot transmission module moves to the underside of the crystal ingot on the transfer suction cup of the crystal ingot transfer module. The ultrasonic motion support adsorption plate of the crystal ingot can move in the Z and Y directions. When it moves to the underside of the crystal ingot, the adsorption plate moves in the Y direction. After it moves to the position, the negative pressure is activated to adsorb the crystal ingot. Then it moves in the Z direction to drive the crystal ingot away from the transfer suction cup. Then it moves in the X direction to the ultrasonic position. After moving to the ultrasonic position, it moves in the Z direction, driving the crystal ingot into the ultrasonic module; In the ultrasonic module, ultrasonic liquid is filled, and the frequency, power, and duration of the ultrasonic waves are set according to the process parameters of the modification module and the information of the ingot. After the ultrasound is completed, the ultrasonic motion support adsorption plate of the crystal ingot moves in the Z direction until it reaches the peeling position. The motion adsorption platform moves in the XYZ direction, driving the wafer chuck to move precisely above the crystal ingot and then descending. Once the set value of the force sensor is reached, the Z-direction movement stops, and the wafer chuck is put under negative pressure and moves upward in the Z direction. During the ascent, the mechanical sensor continuously monitors the magnitude of the peeling force. Only when the magnitude of the peeling force is less than the design value and the visual inspection module detects that the amount of peeling deformation is less than the design value can the Z-axis ascent continue; otherwise, the movement stops. When both monitoring values ​​meet the requirements, the separation of the wafer and the ingot is achieved. The wafer suction cup 310 drives the wafer and the ingot to move to the unloading position by ultrasonic motion support adsorption plate. The device issues an audible and visual prompt that the process is completed. The process personnel take away the wafer and the ingot to complete one process flow. If both monitoring values ​​meet the requirements, and separation of the wafer and ingot has not been achieved, the wafer continues to move upwards to perform the peeling operation. When one or both of the two monitoring values ​​fail to meet the requirements, the Z-axis upward movement is stopped, and the reverse process of the above process is performed. The ingot is moved back to the refining module for another refining process. Then, the above process is repeated until the complete stripping action is achieved. When the vision inspection module detects debris, it issues an alarm message to prompt the process personnel to resolve the issue.

[0011] The aforementioned ultrasonic and testing device capable of completely stripping wafers includes a wafer transfer module that further comprises a transfer chain and a transfer suction cup support plate. The transfer suction cup is fixed to the wafer transfer X-axis module via the transfer suction cup support plate. The fixed end of the transfer chain is fixed to the transfer pad, and the moving end is fixed to the transfer suction cup support plate. An air pipe for the transfer suction cup is deployed inside the transfer chain and is connected to the transfer suction cup.

[0012] The aforementioned ultrasonic and detection device capable of completely removing wafers includes a motion adsorption platform that further comprises a Y-axis motion cable chain and an X-axis motion cable chain. The fixed end of the Y-axis motion cable chain is fixed to a support pad, and the movable end is fixed to the left column of the gantry. The fixed end of the X-axis motion cable chain is fixed to the gantry, and the movable end is fixed to the X-axis motion module. The Y-axis and X-axis motion cable chains contain the motor, the mechanical sensor wires, and the air pipes of the wafer suction cup in the motion module.

[0013] The aforementioned ultrasonic and testing device, which can completely peel off wafers, also has an overflow port on the ultrasonic cover.

[0014] The beneficial effects of this invention are: The ultrasonic pool structure and method used in this invention involve ultrasonication, which drives the ultrasonic liquid to vibrate through a vibrator. Compared with other peeling methods, this makes the modified layer more uniform and stable under stress, greatly reducing the fragmentation rate caused by uneven stress during the ultrasonic process. At the same time, the ultrasonic liquid can quickly enter the modified layer, reducing the peeling process time, improving the efficiency of the process, and solving the problem of unstable peeling processes in the industry. This invention uses a mechanical sensor to control the downward pressure, which enables precise control and ensures that the ingot is not damaged due to excessive pressure. At the same time, different downward pressures can be set according to different processes, ingot size and other factors, making it more precise and flexible and ensuring the stability of the process. This invention employs a mechanical sensor to monitor peeling force and a visual inspection module to monitor peeling deformation. The combined effect of these two variables allows for precise determination of whether to continue the peeling process. This effective monitoring avoids the adverse effects of direct peeling common in the industry, significantly reducing the breakage rate and thus lowering costs. Simultaneously, through real-time monitoring of these two data points and a sophisticated device design, wafers that have not been effectively peeled can undergo further refining processes until complete peeling. This reduces human intervention, greatly improves the automation level of this process segment, and achieves cost reduction and efficiency improvement. Attached Figure Description

[0015] Figure 1 This is a schematic diagram of the overall device of the present invention.

[0016] Figure 2 This is a schematic diagram of the crystal ingot transfer module of the present invention.

[0017] Figure 3 This is a schematic diagram of the motion adsorption platform of the present invention.

[0018] Figure 4 This is a schematic diagram of the structure of the visual inspection module of the present invention.

[0019] Figure 5 This is a schematic diagram of the ultrasonic module of the present invention.

[0020] Figure 6 This is a schematic diagram of the structure of the crystal ingot ultrasonic transmission module of the present invention.

[0021] Figure 7 This is a flowchart of the method of the present invention.

[0022] In the diagram: 1-modification module, 2-ingot transfer module, 3-motion adsorption platform, 4-visual inspection module, 5-ultrasonic module, 6-ingot ultrasonic transmission module; 201-Ingot transfer X-direction module, 202-Transfer drag chain, 203-Transfer suction cup, 204-Transfer suction cup support plate, 205-Transfer pad; 301-Support pad, 302-Y-direction motion cable chain, 303-X-direction motion module, 304-Y-direction motion module, 305-Z-direction support plate, 306-Z-direction motion module, 307-X-direction motion cable chain, 308-Adapter plate, 309-Force sensor, 310-Chip suction cup, 311-Y-direction motion guide rail; 401 - Light source, 402 - Camera, 403 - Camera support bracket; 501-Ultrasonic shield, 502-Ultrasonic transducer, 503-Drain outlet, 504-Inlet, 505-Overflow outlet; 601-Ultrasonic Z-axis motion module, 602-Crystal ingot ultrasonic motion support adsorption plate, 603-Crystal ingot, 604-Ultrasonic X-axis motion module, 605-Ultrasonic support frame. Detailed Implementation

[0023] An ultrasonic and detection device capable of completely removing wafers, the overall device schematic diagram is shown below. Figure 1 As shown, it includes: a modification module 1, a crystal ingot transfer module 2, a motion adsorption platform 3, a visual inspection module 4, an ultrasonic module 5, and a crystal ingot ultrasonic transmission module 6.

[0024] Modification module 1 forms a controllable laser modification layer at a certain depth inside the semiconductor material by precisely controlling laser parameters (wavelength, pulse, energy density, etc.) and the processing environment, laying the foundation for subsequent ultrasonic ablation.

[0025] The ingot transfer module 2 mainly consists of an ingot transfer X-direction module 201, a transfer cable chain 202, a transfer suction cup 203, a transfer suction cup support plate 204, and a transfer pad 205. A schematic diagram of the device is shown below. Figure 2As shown, it is mainly used to transfer the modified crystal ingot 603 between the modification module 1 and the crystal ingot ultrasonic transmission module 6. The transfer pad 205 supports the entire transfer module; the crystal ingot transfer X-axis module 201 is fixed on the transfer pad 205; the transfer suction cup support plate 204 is fixed on the crystal ingot transfer X-axis module 201; the transfer suction cup 203 is fixed on the transfer suction cup support plate 204; the fixed end of the transfer chain 202 is fixed on the transfer pad 205, and the moving end is fixed on the transfer suction cup support plate 204; the air pipe of the transfer suction cup 203 is deployed inside the transfer chain 202, and the air pipe is connected to the transfer suction cup 203 to achieve reliable adsorption and X-axis transport of the crystal ingot.

[0026] The motion adsorption platform 3 mainly consists of a support plate 301, a Y-axis motion cable chain 302, an X-axis motion module 303, a Y-axis motion module 304, a Z-axis support plate 305, a Z-axis motion module 306, an X-axis motion cable chain 307, an adapter plate 308, a force sensor 309, a chip suction cup 310, and a Y-axis motion guide rail 311. A schematic diagram of the device is shown below. Figure 3 As shown, it is mainly used for movement in the XYZ directions, precise measurement of peeling force, and adsorption of wafers. The support plate 301 provides support for the entire structure; the Y-axis motion cable chain 302, Y-axis motion module 304, Y-axis motion guide rail 311, and gantry frame provide Y-axis movement for the structure. The Y-axis motion module 304 and Y-axis motion guide rail 311 are fixed to the support plate 301 on the left and right sides respectively. The left column of the gantry frame is connected to the Y-axis motion module 304, and the right column of the gantry frame is connected to the Y-axis motion guide rail 311. The fixed end of the Y-axis motion cable chain 302 is fixed to the support plate 301, and the moving end is fixed to the left column of the gantry frame. The X-axis motion module 303 and X-axis motion cable chain 307 provide X-axis movement for the structure. The X-axis motion module 303 is fixed to the gantry frame, and the fixed end of the X-axis motion cable chain 307 is fixed to the gantry frame, and the moving end is fixed to the X-axis motion module 303. The Z-axis motion module 306 provides Z-axis motion for the structure. The Z-axis motion module 306 is fixed to the X-axis motion module 303 via the Z-axis support plate 305. The adapter plate 308 is used to connect the Z-axis motion module 306 and the force sensor 309. The force sensor 309 is used to accurately measure the magnitude of the peeling force and then determine whether to continue the peeling action. The wafer suction cup 310 is fixed to the force sensor 309 and is used to adsorb the modified ingot to realize the peeling action and then adsorb the wafer. The area between the Y-axis motion module 304 and the Y-axis motion guide rail 311 on the support pad 301 is used to fix the ultrasonic module 5. This area is also provided with a drain outlet. The Y-axis motion cable chain 302 and the X-axis motion cable chain 307 deploy the motor, the force sensor wires and the air tube of the wafer suction cup in the motion module.

[0027] The visual inspection module 4 mainly consists of a light source 401, a camera 402, and a camera support frame 403. A schematic diagram of the device is shown below. Figure 4 As shown. Among them, the camera support bracket 403 is used to support and fix the camera and the light source; the camera 402 is used to detect the separation gap between the ingot and the wafer during the separation process and to determine whether to continue the separation action; the light source 401 provides sufficient illumination for the camera detection; the vision inspection module 4 is fixed on the support pad 301 and is located below the gantry.

[0028] The ultrasonic module 5 mainly consists of an ultrasonic shield 501, an ultrasonic transducer 502, a drain outlet 503, a water inlet 504, and an overflow outlet 505. A schematic diagram of the device is shown below. Figure 5 As shown, it mainly provides power for ingot stripping. The ultrasonic module 5 is installed on the support pad 301 and is located in the area between the Y-axis motion module 304 and the Y-axis motion guide rail 311. The ultrasonic cover 501 includes a surrounding fence and a base plate. The ultrasonic transducer 502 is placed inside the ultrasonic cover 501 to form an ultrasonic pool. The fence of the ultrasonic cover 501 is provided with a water inlet 504 and an overflow outlet 505. The base plate of the ultrasonic cover 501 is provided with a drain outlet 503, which is connected to the water outlet position of the drain outlet on the support pad 301.

[0029] The crystal ingot ultrasonic transmission module 6 mainly consists of an ultrasonic Z-axis motion module 601, a crystal ingot ultrasonic motion support adsorption plate 602, an ultrasonic X-axis motion module 604, and an ultrasonic support frame 605. A schematic diagram of the device is shown below. Figure 6 As shown, it is mainly used for the transmission of crystal ingots between the crystal ingot transfer module 2 and the ultrasonic module 5. The ultrasonic Z-axis motion module 601 provides Z-axis motion for the structure; the crystal ingot ultrasonic support adsorption plate 602 is fixed to the ultrasonic Z-axis motion module 601 and is used to adsorb the crystal ingot; the ultrasonic X-axis motion module 604 provides X-axis motion for the structure; the ultrasonic support frame 605 provides support for the entire structure, and the ultrasonic support frame 605 is fixed to the support pad 301. The ultrasonic X-axis motion module 604 is fixed to the ultrasonic support frame 605, and the ultrasonic Z-axis motion module 601 is fixed to the ultrasonic X-axis motion module 604; the crystal ingot ultrasonic transmission module 6 is located in front of the ultrasonic module 5 at the support pad 301.

[0030] A method for removing wafers using an ultrasonic and detection device, comprising the following steps: The properly ground crystal ingot is placed on the adsorption processing table of the modification module 1, and the corresponding process parameters are matched according to the characteristics of the crystal ingot to complete the laser modification process. The transfer suction cup 203 of the crystal ingot transfer module 2 moves to the loading position. The robot arm of the modification module 1 places the modified crystal ingot 603 on the transfer suction cup 203 at the loading position. The negative pressure is turned on to adsorb the crystal ingot 603 and ensure that the position remains unchanged during the movement. The crystal ingot transfer X-direction module 201 drives the transfer suction cup 203 and the crystal ingot 603 to the unloading position in the X direction, waiting for the next module to grab the crystal ingot 603. The ultrasonic motion support adsorption plate 602 of the ingot ultrasonic transmission module 6 moves to the lower part of the ingot 603 on the transfer suction cup 203 of the ingot transfer module 2. The horizontal adsorption plate of the ultrasonic motion support adsorption plate 602 is an adsorption plate with a sliding rail, which can move in the Z and Y directions. When it moves to the lower part of the ingot 603, the adsorption plate moves in the Y direction. After it moves to the position, the negative pressure is turned on to adsorb the ingot 603. Then it moves in the Z direction to drive the ingot away from the transfer suction cup 203. Then it moves in the X direction to the ultrasonic position. After moving to the ultrasonic position, it moves in the Z direction, driving the crystal ingot 603 into the ultrasonic module 5; In ultrasonic module 5, a sufficient amount of ultrasonic liquid is filled. This ultrasonic liquid can effectively surround the ultrasonic modification layer, ensuring the uniformity and stability of the peeling action. The ultrasonic process, such as frequency, power, and duration, is set according to the process parameters of the modification module and the information of the crystal ingot. After the ultrasound is completed, the crystal ingot ultrasonic motion support adsorption plate 602 moves in the Z direction to the peeling position, and the motion adsorption platform 3 moves in the XYZ direction, driving the wafer suction cup 310 to move precisely above the crystal ingot 603 and perform a downward movement. After reaching the set value of the force sensor 309, the Z direction movement stops to ensure that the crystal ingot 603 is not damaged due to excessive downward pressure. The wafer suction cup 310 turns on the negative pressure and performs a Z direction upward movement. During the ascent, the mechanical sensor 309 continuously monitors the magnitude of the peeling force. Only when the magnitude of the peeling force is less than the design value and the visual inspection module 4 detects that the amount of peeling deformation is less than the design value can the Z-axis ascent continue; otherwise, the movement stops. When both monitoring values ​​meet the requirements, the separation of the wafer and the ingot 603 is achieved. The wafer suction cup 310 drives the wafer and the ingot ultrasonic motion support adsorption plate 602 to move the separated ingot 603 to the unloading position. The device issues audible and visual prompts indicating that the process is completed. The process personnel remove the wafer and ingot 603 to complete one process flow. If both monitoring values ​​meet the requirements, and separation of the wafer and ingot has not been achieved, the wafer continues to move upwards to perform the peeling operation. When one or both of the two monitoring values ​​fail to meet the requirements, the Z-axis upward movement is stopped, and the reverse process of the above process is performed. The ingot is moved back to the modification module 1 for another modification process. Then, the above process is repeated until the complete stripping action is achieved. When visual monitoring detects debris, an alarm is triggered to alert process personnel to resolve the issue.

[0031] To ensure that the crystal ingot is not damaged due to excessive downward pressure during the descent of the motion adsorption platform 3, the critical value of the downward pressure of the force sensor 309 is set to F0; to ensure that the peeled wafer is not broken due to excessive tension during the ascent of the motion adsorption platform 3, the critical value of the upward force of the force sensor 309 is set to F1, and the normal deformation amount of the peeled wafer is set to L0; the movement steps of the device are as follows: Figure 7 As shown.

[0032] The present invention has the following technical features: (1) The structure and method of the ultrasonic pool combined with the ultrasonic liquid are used to make the modified layer more uniform and stable under stress, and promote the stability and reliability of the ultrasonic process. (2) The mechanical sensor 309 is used to precisely control the downward pressure, forming a database of different processes, realizing automatic setting of the downward pressure, avoiding the phenomenon that the wafer cannot be adsorbed due to insufficient adsorption distance or excessive pressure during the downward adsorption process, thus reducing the fragmentation rate; (3) The peeling force is monitored by mechanical sensor 309 and the peeling deformation is monitored by visual inspection module 4. The two variables jointly control the peeling process and determine whether to continue the peeling action to ensure that the peeling process does not break apart. (4) Real-time monitoring of dual variables and device design, process design and process design will automatically return the wafers that are not completely stripped to the quality improvement module 1 for a second quality improvement process, ensuring that the wafers are completely stripped and improving the automation level of the equipment.

[0033] The described embodiments are merely some, not all, of the embodiments in this application. All other embodiments obtained by those skilled in the art based on the embodiments in this application without inventive effort should fall within the scope of protection of this application. Each motion structure is a schematic diagram and can be implemented using cylinders, guide rails, lead screws, or other forms; the ultrasonic liquid can be a dedicated ultrasonic liquid, pure water, or other substances.

Claims

1. An ultrasonic and detection device capable of completely peeling off wafers, characterized in that: include: The modified module (1), the ingot transfer module (2), the motion adsorption platform (3), the ultrasonic module (5), and the ingot ultrasonic transmission module (6) are included. The ingot transfer module (2) includes an ingot transfer X-axis module (201), a transfer suction cup (203), and a transfer pad (205). The ingot transfer X-axis module (201) is fixed on the transfer pad (205), and the transfer suction cup (203) is fixed on the ingot transfer X-axis module (201). The motion adsorption platform (3) includes a support pad (301), an X-axis motion module (303), a Y-axis motion module (304), a Z-axis motion module (306), and a transfer plate (307). 08), a force sensor (309), a chip chuck (310), and a Y-axis motion guide rail (311). The Y-axis motion module (304) and the Y-axis motion guide rail (311) are fixed on the support plate (301) on the left and right sides respectively. The left column of the gantry is connected to the Y-axis motion module (304), and the right column of the gantry is connected to the Y-axis motion guide rail (311). The X-axis motion module (303) is fixed on the gantry, and the Z-axis motion module (306) is fixed on the X-axis motion module (303). The adapter plate (308) is used to connect the Z-axis motion module (306) and the force sensor (309), and the chip chuck (310). 310) Fixed on the mechanical sensor (309), the ultrasonic module (5) includes an ultrasonic cover (501), an ultrasonic transducer (502), a drain (503) and a water inlet (504). The ultrasonic module (5) is mounted on the support plate (301) and located in the area between the Y-axis motion module (304) and the Y-axis motion guide rail (311). The ultrasonic transducer (502) is placed inside the ultrasonic cover (501). The ultrasonic cover (501) is provided with a water inlet (504) and a drain (503). The drain (503) is connected to the water outlet position of the drain on the support plate (301). The crystal ingot ultrasonic transmission module (6) includes The ultrasonic Z-axis motion module (601), the ingot ultrasonic motion support adsorption plate (602), the ultrasonic X-axis motion module (604), and the ultrasonic support frame (605) are fixed on the support pad (301), the ultrasonic X-axis motion module (604) is fixed on the ultrasonic support frame (605), the ultrasonic Z-axis motion module (601) is fixed on the ultrasonic X-axis motion module (604), the ingot ultrasonic motion support adsorption plate (602) is fixed on the ultrasonic Z-axis motion module (601), and the ingot ultrasonic transmission module (6) is located in front of the ultrasonic module (5) on the support pad (301).

2. The peeling method of the ultrasonic and detection device capable of completely peeling off wafers according to claim 1, characterized in that: Includes the following steps: The properly ground ingot (603) is placed on the adsorption processing table of the modification module (1), and the corresponding process parameters are matched according to the characteristics of the ingot (603) to complete the laser modification process. The transfer suction cup (203) of the ingot transfer module (2) moves to the loading position. The robot arm of the modification module (1) places the modified ingot (603) on the transfer suction cup (203) at the loading position. The negative pressure is turned on to adsorb the ingot (603) and ensure that the position remains unchanged during the movement. The ingot transfer X-direction module (201) drives the transfer suction cup (203) and the ingot (603) to the unloading position, waiting for the next module to grab the ingot (603). The ultrasonic motion support adsorption plate (602) of the ingot ultrasonic transmission module (6) moves to the ingot (603) below the ingot on the transfer suction cup (203) of the ingot transfer module (2). The ultrasonic motion support adsorption plate (602) can move in the Z and Y directions. When it moves to the ingot (603), the adsorption plate moves in the Y direction. After it moves to the position, the negative pressure is turned on to adsorb the ingot (603). Then it moves in the Z direction to drive the ingot away from the transfer suction cup (203). Then it moves in the X direction to the ultrasonic position. After moving to the ultrasonic position, it moves in the Z direction, driving the crystal ingot (603) into the ultrasonic module (5); In the ultrasonic module (5), ultrasonic liquid is filled, and the frequency, power and duration of the ultrasonic are set according to the process parameters of the modification module and the information of the crystal ingot. After the ultrasound is completed, the crystal ingot ultrasonic motion support adsorption plate (602) moves in the Z direction to the peeling position, and the motion adsorption platform (3) moves in the XYZ direction, driving the wafer chuck (310) to move precisely above the crystal ingot (603) and perform a downward movement. After reaching the set value of the force sensor (309), the Z direction movement stops, and the wafer chuck (310) turns on the negative pressure and performs a Z direction upward movement. During the ascent, the mechanical sensor (309) continuously monitors the magnitude of the peeling force. The Z-axis ascent can continue only if the magnitude of the peeling force is less than the design value; otherwise, the movement stops. When the monitoring value meets the requirements, the separation of the wafer and the ingot (603) is realized. The wafer suction cup (310) drives the wafer and the ingot ultrasonic motion support adsorption plate (602) to move the stripped ingot (603) to the unloading position respectively. The device issues an audio-visual prompt that the process is completed. The process personnel take away the wafer and the ingot (603) to complete one process flow. If the monitoring value meets the requirements and separation of the wafer and ingot has not been achieved, continue moving upwards to perform the peeling operation; When the monitored value does not meet the requirements, stop the Z-axis upward movement and reverse the above process to move the ingot back to the modification module (1) for another modification process. Then, repeat the above process until the complete stripping action is achieved.

3. The ultrasonic and detection device capable of completely peeling off a wafer according to claim 1, characterized in that: It also includes a visual inspection module (4), which includes a light source (401), a camera (402), and a camera support frame (403). The camera support frame (403) is used to support and fix the camera and the light source. The visual inspection module (4) is fixed on the support plate (301) and located below the gantry.

4. The method for peeling off a wafer using an ultrasonic and detection device according to claim 1, characterized in that: Includes the following steps: The properly ground ingot (603) is placed on the adsorption processing table of the modification module (1), and the corresponding process parameters are matched according to the characteristics of the ingot (603) to complete the laser modification process. The transfer suction cup (203) of the ingot transfer module (2) moves to the loading position. The robot arm of the modification module (1) places the modified ingot (603) on the transfer suction cup (203) at the loading position. The negative pressure is turned on to adsorb the ingot (603) and ensure that the position remains unchanged during the movement. The ingot transfer X-direction module (201) drives the transfer suction cup (203) and the ingot (603) to the unloading position, waiting for the next module to grab the ingot (603). The ultrasonic motion support adsorption plate (602) of the ingot ultrasonic transmission module (6) moves to the ingot (603) below the ingot on the transfer suction cup (203) of the ingot transfer module (2). The ultrasonic motion support adsorption plate (602) can move in the Z and Y directions. When it moves to the ingot (603), the adsorption plate moves in the Y direction. After it moves to the position, the negative pressure is turned on to adsorb the ingot (603). Then it moves in the (Z) direction to drive the ingot away from the transfer suction cup (203). Then it moves in the X direction to the ultrasonic position. After moving to the ultrasonic position, it moves in the Z direction, driving the crystal ingot (603) into the ultrasonic module (5); In the ultrasonic module (5), ultrasonic liquid is filled, and the frequency, power and duration of the ultrasonic are set according to the process parameters of the modification module and the information of the crystal ingot. After the ultrasound is completed, the crystal ingot ultrasonic motion support adsorption plate (602) moves in the Z direction to the peeling position, and the motion adsorption platform (3) moves in the XYZ direction, driving the wafer chuck (310) to move precisely above the crystal ingot (603) and perform a downward movement. After reaching the set value of the force sensor (309), the Z direction movement stops, and the wafer chuck (310) turns on the negative pressure and performs a Z direction upward movement. During the ascent, the mechanical sensor (309) continuously monitors the magnitude of the peeling force. Only when the magnitude of the peeling force is less than the design value and the visual detection module (4) detects that the amount of peeling deformation is less than the design value can the Z-axis ascent continue; otherwise, the movement stops. When both monitoring values ​​meet the requirements, the separation of the wafer and the ingot (603) is achieved. The wafer chuck (310) drives the wafer and the ingot ultrasonic motion support adsorption plate (602) to move the stripped ingot (603) to the unloading position. The device issues an audio-visual prompt that the process is completed. The process personnel take away the wafer and the ingot (603) to complete one process flow. If both monitoring values ​​meet the requirements, and separation of the wafer and ingot has not been achieved, the wafer continues to move upwards to perform the stripping operation. When one or both of the two monitoring values ​​fail to meet the requirements, stop the Z-axis upward movement and reverse the above process to move the ingot back to the refining module (1) for another refining process. Then, repeat the above process until the complete stripping action is achieved. When the visual inspection module (4) detects a fragment, it issues an alarm message to prompt the process personnel to resolve the issue.

5. An ultrasonic and detection device capable of completely peeling off a wafer according to claim 1 or 3, characterized in that: The ingot transfer module (2) also includes a transfer drag chain (202) and a transfer suction cup support plate (204). The transfer suction cup (203) is fixed on the ingot transfer X-direction module (201) through the transfer suction cup support plate (204). The fixed end of the transfer drag chain (202) is fixed on the transfer pad (205), and the moving end is fixed on the transfer suction cup support plate (204). The air pipe of the transfer suction cup (203) is deployed inside the transfer drag chain (202), and the air pipe is connected to the transfer suction cup (203).

6. An ultrasonic and detection device capable of completely peeling off a wafer according to claim 1 or 3, characterized in that: The motion adsorption platform (3) also includes a Y-axis motion cable chain (302) and an X-axis motion cable chain (307). The fixed end of the Y-axis motion cable chain (302) is fixed on the support pad (301), and the moving end is fixed on the left column of the gantry. The fixed end of the X-axis motion cable chain (307) is fixed on the gantry, and the moving end is fixed on the X-axis motion module (303). The Y-axis motion cable chain (302) and the X-axis motion cable chain (307) are used to deploy the motor, the mechanical sensor wires and the air pipes of the chip suction cup in the motion module.

7. An ultrasonic and detection device capable of completely peeling off a wafer according to claim 1 or 3, characterized in that: An overflow port (505) is also provided on the ultrasonic shield (501).

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