Ventilation panel, preparation method thereof and deposition cavity

Abstract

The embodiment of the invention relates to the field of semiconductors, and provides a ventilation panel, a preparation method thereof and a deposition cavity. The ventilation panel comprises a panel body, an aluminum layer and a protective layer. The aluminum layer is located between the panel main body and the protective layer, and the protective layer is an aluminum oxide layer and / or an aluminum fluoride layer; the aluminum oxide layer comprises an aluminum oxide gradient film and an aluminum oxide film, the content of oxygen atoms in the aluminum oxide gradient film is gradually increased in the direction that the aluminum layer points to the aluminum oxide film, and the ratio of the content of the oxygen atoms in the aluminum oxide film to the content of the aluminum atoms is larger than the ratio of the content of the oxygen atoms in the aluminum oxide gradient film to the content of the aluminum atoms; the aluminum fluoride layer comprises an aluminum fluoride gradient film and an aluminum fluoride film, the content of fluorine atoms in the aluminum fluoride gradient film is gradually increased in the direction that the aluminum layer points to the aluminum fluoride film, and the ratio of the content of the fluorine atoms in the aluminum fluoride film to the content of aluminum atoms in the aluminum fluoride film is larger than the ratio of the content of the fluorine atoms in the aluminum fluoride gradient film to the content of the aluminum atoms in the aluminum fluoride gradient film. The embodiment of the invention at least can improve the protection effect of the protection layer.

Description

Technical Field

[0001] This disclosure relates to the semiconductor field, and in particular to a ventilated panel and its preparation method and deposition cavity. Background Technology

[0002] Thin film deposition is a crucial step in wafer fabrication, forming a thin film on the wafer surface through a deposition chamber. Within the deposition chamber, a venting panel is a vital component; its primary function is to allow reactive gases to flow into the deposition chamber, ensuring uniform film deposition.

[0003] A ventilation panel consists of a panel body and a protective layer. The panel body is typically made of aluminum. To protect the panel body, a protective layer is usually applied. However, current protective layer designs have problems, resulting in inadequate protection. Summary of the Invention

[0004] This disclosure provides a ventilated panel and its preparation method, as well as a deposition cavity, which can at least improve the protective effect of the protective layer.

[0005] According to some embodiments of this disclosure, one aspect of this disclosure provides a ventilation panel, the ventilation panel including a panel body, the material of the panel body comprising metallic aluminum; an aluminum layer located on the panel body; a protective layer located on the surface of the aluminum layer facing away from the panel body, the protective layer being an aluminum oxide layer and / or an aluminum fluoride layer; the aluminum oxide layer including an aluminum oxide gradient film and an aluminum oxide film, the aluminum oxide gradient film being located between the aluminum layer and the aluminum oxide film, and in the direction from the aluminum layer to the aluminum oxide film, the aluminum oxide gradient film contains oxygen. The content of atoms gradually increases, and the ratio of oxygen atoms to aluminum atoms in the alumina film is greater than that in the alumina gradient film; the aluminum fluoride layer includes an aluminum fluoride gradient film and an aluminum fluoride film, the aluminum fluoride gradient film is located between the aluminum layer and the aluminum fluoride film, and in the direction from the aluminum layer to the aluminum fluoride film, the content of fluorine atoms in the aluminum fluoride gradient film gradually increases, and the ratio of fluorine atoms to aluminum atoms in the aluminum fluoride film is greater than that in the aluminum fluoride gradient film.

[0006] In some embodiments, the thickness of the aluminum layer is 1 μm to 2 μm, the thickness of the alumina layer is 20 μm to 50 μm, and the thickness of the aluminum fluoride layer is 20 μm to 50 μm.

[0007] In some embodiments, the thickness of the alumina gradient film is less than the thickness of the alumina film; the thickness of the aluminum fluoride gradient film is less than the thickness of the aluminum fluoride film.

[0008] In some embodiments, the thickness of the alumina gradient film is 50 nm to 1 μm, the thickness of the alumina film is 19 μm to 49.95 μm, the thickness of the aluminum fluoride gradient film is 50 nm to 1 μm, and the thickness of the aluminum fluoride film is 19 μm to 49.95 μm.

[0009] In some embodiments, the protective layer is an aluminum oxide layer and an aluminum fluoride layer, wherein the aluminum oxide layer is located between the aluminum layer and the aluminum fluoride layer.

[0010] According to some embodiments of this disclosure, another aspect of this disclosure provides a method for preparing a ventilated panel, comprising: providing a panel body, the material of the panel body comprising metallic aluminum; sputtering an aluminum target using a pulsed power supply to form an aluminum layer on the panel body, the pulsed power supply being a HIPIMS power supply; continuing to sputter the aluminum target to provide and ionize an oxygen-containing gas or a fluorine-containing gas, or, first providing and ionizing one of the oxygen-containing gas and the fluorine-containing gas, and then providing and ionizing the other of the oxygen-containing gas and the fluorine-containing gas, to form a ventilated panel on the aluminum layer away from the panel body. Protective layer; during the process of providing and ionizing the oxygen-containing gas, the gas flow rate of the oxygen-containing gas is gradually increased to a first gas flow rate within a first reaction time to form an alumina gradient film, and then the gas flow rate of the oxygen-containing gas is maintained at the first gas flow rate for a second reaction time to form an alumina film; during the process of providing and ionizing the fluorine-containing gas, the gas flow rate of the fluorine-containing gas is gradually increased from 0 to a second gas flow rate within a third reaction time to form an aluminum fluoride gradient film, and then the gas flow rate of the fluorine-containing gas is maintained at the second gas flow rate for a fourth reaction time to form an aluminum fluoride film.

[0011] In some embodiments, the first reaction time is 5s to 20s; the second reaction time is 3min to 10min; the first gas flow rate is 20sccm to 800sccm; the third reaction time is 5s to 20s; the fourth reaction time is 3min to 10min; and the second gas flow rate is 20sccm to 800sccm.

[0012] In some embodiments, the power of the pulse power supply is 2kW to 10kW, the voltage of the pulse power supply is -100V to -8000V, the current of the pulse power supply is 10A to 40A, the frequency of the pulse power supply is 1Hz to 200Hz, and the pulse duration width of the pulse power supply is 1μs to 100μs.

[0013] In some embodiments, the method for preparing the ventilated panel further includes providing and ionizing a cleaning gas to clean the panel body before sputtering the aluminum target.

[0014] According to some embodiments of this disclosure, another aspect of this disclosure also provides a deposition cavity, including the ventilated panel described in any of the above embodiments, or including a ventilated panel prepared by the method for preparing the ventilated panel described in any of the above embodiments.

[0015] The technical solutions provided in this disclosure have at least the following advantages:

[0016] An aluminum layer is provided between the panel body and the protective layer, and the panel body is made of aluminum. The aluminum layer can improve the bonding force between the protective layer and the panel body, thereby avoiding the situation where the protective layer falls off or partially detaches due to insufficient bonding force between the two, thus improving the protective effect of the protective layer.

[0017] When the protective layer is an alumina layer, the coefficients of thermal expansion of aluminum and alumina are different. In the direction from the aluminum layer to the alumina film, the oxygen content in the alumina gradient film gradually increases, causing the coefficient of thermal expansion to gradually transition from the aluminum layer to the alumina film. This reduces the thermal stress between the alumina film and the aluminum layer, preventing the protective layer from peeling off or partially detaching due to excessive thermal stress, thus improving the protective effect. Furthermore, the ratio of oxygen to aluminum atoms in the alumina film is greater than that in the alumina gradient film, meaning the alumina film has a higher oxygen content and fewer oxygen vacancies. This results in better density and chemical stability, further enhancing the protective effect of the alumina film.

[0018] When the protective layer is an aluminum fluoride layer, the thermal expansion coefficients of aluminum and aluminum fluoride are different. In the direction from the aluminum layer to the aluminum fluoride film, the fluorine atom content in the aluminum fluoride gradient film gradually increases. This causes the thermal expansion coefficient of the aluminum fluoride gradient film to gradually transition from the aluminum layer to the aluminum fluoride film, reducing the thermal stress between the aluminum fluoride film and the aluminum layer. This prevents the protective layer from peeling off or partially detaching due to excessive thermal stress between the aluminum fluoride film and the aluminum layer, thus improving the protective effect of the protective layer. Furthermore, the ratio of fluorine atoms to aluminum atoms in the aluminum fluoride film is greater than that in the aluminum fluoride gradient film. In other words, the aluminum fluoride film has a higher fluorine content and fewer fluorine vacancies, resulting in better density and chemical stability, which further enhances its protective effect.

[0019] When the protective layer is composed of an aluminum oxide layer and an aluminum fluoride layer, the protective effect can be further improved compared to a protective layer composed of only aluminum oxide or only aluminum fluoride layer. For example, if one of the aluminum oxide or aluminum fluoride layers in the protective layer is damaged, the other layer can continue to protect the panel body, resulting in a good protective effect. Attached Figure Description

[0020] One or more embodiments are illustrated by way of example with corresponding pictures in the accompanying drawings. These illustrations do not constitute a limitation on the embodiments. Unless otherwise stated, the pictures in the accompanying drawings do not constitute a limitation on scale. In order to more clearly illustrate the technical solutions in the embodiments of this disclosure or the conventional technology, the drawings used in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this disclosure. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0021] Figure 1 A schematic diagram of a ventilation panel provided in an embodiment of this disclosure;

[0022] Figure 2 A top view of the panel body provided in an embodiment of this disclosure;

[0023] Figure 3 Another structural schematic diagram of the ventilation panel provided in the embodiments of this disclosure;

[0024] Figure 4 A schematic diagram of yet another structure of the ventilation panel provided in an embodiment of this disclosure;

[0025] Figure 5 This is a schematic diagram of a structure for forming an aluminum layer in a sputtering cavity, provided by an embodiment of the present disclosure;

[0026] Figure 6 This is another structural schematic diagram of forming an aluminum layer in a sputtering cavity, provided by an embodiment of this disclosure. Detailed Implementation

[0027] In the ventilated panels of the relevant technology, the ventilated panel includes a panel body and a protective layer. The protective layer is an aluminum oxide film or an aluminum fluoride film. The protective layer is in direct contact with the aluminum panel body. The bonding force between the two is weak, which makes the protective layer easy to fall off from the panel body or cause partial detachment. As a result, the protective layer cannot protect the panel body well, and the protective effect of the protective layer is poor.

[0028] This disclosure provides a ventilated panel and its preparation method, as well as a deposition cavity, which can at least improve the protective effect of the protective layer.

[0029] In the description of the embodiments of this disclosure, technical terms such as "first" and "second" are used only to distinguish different objects and should not be construed as indicating or implying relative importance or implicitly specifying the number, specific order, or primary or secondary relationship of the indicated technical features. In the description of the embodiments of this disclosure, "a plurality of" means two or more, unless otherwise explicitly and specifically defined.

[0030] In this document, the term "embodiment" means that a particular feature, structure, or characteristic described in connection with an embodiment may be included in at least one embodiment of this disclosure. The appearance of this phrase in various places throughout the specification does not necessarily refer to the same embodiment, nor is it a separate or alternative embodiment mutually exclusive with other embodiments. It will be explicitly and implicitly understood by those skilled in the art that the embodiments described herein can be combined with other embodiments.

[0031] In the description of the embodiments of this disclosure, the term "and / or" is merely a description of the relationship between related objects, indicating that three relationships can exist. For example, A and / or B can represent three cases: A exists, A and B exist simultaneously, and B exists. Additionally, the character " / " in this document generally indicates that the preceding and following related objects have an "or" relationship.

[0032] In the description of the embodiments of this disclosure, the term "multiple" refers to two or more (including two), similarly, "multiple groups" refers to two or more (including two groups), and "multiple pieces" refers to two or more (including two pieces).

[0033] In the description of the embodiments of this disclosure, the technical terms "center," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," and "circumferential" indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing the embodiments of this disclosure and simplifying the description, and are not intended to indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on the embodiments of this disclosure.

[0034] In the description of the embodiments of this disclosure, unless otherwise expressly specified and limited, technical terms such as "installation," "connection," "joining," and "fixing" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in the embodiments of this disclosure according to the specific circumstances.

[0035] In the accompanying drawings corresponding to the embodiments of this disclosure, the thickness and area of ​​the layers are enlarged for better understanding and ease of description. When describing a component (such as a layer, film, region, or substrate) on or on the surface of another component, the component may be "directly" located on the surface of the other component, or there may be a third component between the two components. Conversely, when describing a component on the surface of another component, or when another component is formed or disposed on the surface of a component, it indicates that there is no third component between the two components. Furthermore, when describing a component as being "generally" formed on another component, it means that the component is not formed on the entire surface (or front surface) of the other component, nor is it formed on a portion of the edge of the entire surface.

[0036] In the description of embodiments of this disclosure, when a component "includes" another component, other components are not excluded unless otherwise stated, and may be further included. Furthermore, when a component such as a layer, film, region, or plate is referred to as being "on / located" on another component, it can be "directly on" the other component (i.e., located on the surface of the other component with no other components between them), or another component may be present therein. Additionally, when a component such as a layer, film, region, or plate is "directly located" on another component, or when a component such as a layer, film, region, or plate is located on the surface of another component, it indicates that no other components are located therein.

[0037] The embodiments of this disclosure will now be described in detail with reference to the accompanying drawings. However, those skilled in the art will understand that many technical details have been provided in the embodiments of this disclosure to facilitate a better understanding of the disclosure. However, the technical solutions claimed in this disclosure can be implemented even without these technical details and various variations and modifications based on the following embodiments.

[0038] Figure 1 This is a schematic diagram of a ventilation panel provided in an embodiment of the present disclosure.

[0039] refer to Figure 1 The ventilated panel includes a panel body 10, an aluminum layer 11, and a protective layer 12. The panel body 10 is made of metallic aluminum; the aluminum layer 11 is located on the panel body 10; the protective layer 12 is located on the surface of the aluminum layer 11 facing away from the panel body 10, and the protective layer 12 is an aluminum oxide layer 13; the aluminum oxide layer 13 includes an aluminum oxide gradient film 131 and an aluminum oxide film 132. The aluminum oxide gradient film 131 is located between the aluminum layer 11 and the aluminum oxide film 132. In the direction from the aluminum layer 11 to the aluminum oxide film 132, the oxygen content in the aluminum oxide gradient film 131 gradually increases, and the ratio of oxygen content to aluminum content in the aluminum oxide film 132 is greater than the ratio of oxygen content to aluminum content in the aluminum oxide gradient film 131.

[0040] Figure 2A top view of the panel body provided in an embodiment of this disclosure. Figure 2 The aluminum layer and protective layer are not shown in the image.

[0041] refer to Figure 2 The venting panel is used to allow the reaction gas introduced into the deposition chamber to flow evenly into the chamber. Specifically, the panel body 10 is provided with a plurality of vent holes 101 penetrating the venting panel, through which the reaction gas can enter the deposition chamber. The vent holes 101 are evenly distributed on the venting panel.

[0042] Reference Figure 1 and Figure 2 The panel body 10 includes a first surface 102 and a second surface 103 disposed opposite to each other, and a side surface 104 connecting the first surface 102 and the second surface 103. During application, the first surface 102 faces the wafer support stage inside the cavity, and the second surface 103 abuts against the top sidewall of the deposition cavity. The first surface 102, the side surface 104, and the inner wall of the vent 101 are exposed inside the deposition cavity, while the second surface 103 and the deposition cavity are not exposed. Therefore, the second surface 103 does not require the aluminum layer 11 and the protective layer 12 for protection.

[0043] In other words, the aluminum layer 11 is located on the panel body 10. Specifically, the aluminum layer 11 can be located on the first surface 102, the side surface 104, and the inner wall surface of the vent 101.

[0044] The panel body 10 is made of aluminum, or aluminum alloy.

[0045] The aluminum layer 11 enhances the adhesion between the panel body 10 and the protective layer 12. Specifically, the aluminum layer 11 forms a stronger chemical bond with the panel body 10, which contains metallic aluminum, and the aluminum atoms in the aluminum layer 11 are interconnected by metallic bonds. Metallic bonds have strong directionality and strength, and this tight metallic bond results in a strong adhesion between the aluminum layer 11 and the panel body 10. When an aluminum oxide layer 13 is deposited on the aluminum layer 11, chemical bonds can form between aluminum and oxygen atoms, further strengthening the bond between the aluminum oxide layer 13 and the aluminum layer 11. Therefore, the aluminum layer 11 enhances the adhesion between the protective layer 12 and the panel body 10 through its metallic bonds with the panel body 10 and its chemical bonds with the aluminum oxide layer 13.

[0046] In some embodiments, the thickness of the aluminum layer 11 is 1 μm to 2 μm, for example, 1 μm, 1.2 μm, 1.4 μm, 1.6 μm, 1.8 μm, or 2 μm. A thickness of the aluminum layer 11 within the above range can effectively improve the bonding strength between the protective layer 12 and the panel body 10. Furthermore, an excessively thick aluminum layer 11 will not increase the cost of the ventilated panel.

[0047] The thickness of the alumina layer 13 is 20μm to 50μm, for example, 20μm, 30μm, 35μm, 40μm, or 50μm. A thickness within this range provides sufficient protection for the ventilation panel without increasing its cost.

[0048] The alumina layer 13 includes an alumina gradient film 131 and an alumina film 132. In the direction from the aluminum layer 11 to the alumina film 132, the oxygen content in the alumina gradient film 131 gradually increases, causing the coefficient of thermal expansion of the alumina gradient film 131 to gradually transition from the aluminum layer 11 to the alumina film 132. This reduces the thermal stress between the alumina film 132 and the aluminum layer 11, preventing the protective layer 12 from peeling off or partially detaching due to excessive thermal stress between them, thus improving the protective effect of the protective layer 12. Furthermore, the ratio of oxygen to aluminum atoms in the alumina film 132 is greater than that in the alumina gradient film 131, meaning the alumina film 132 has a higher oxygen content and fewer oxygen vacancies. This results in better density and chemical stability, further enhancing the protective effect of the alumina film 132.

[0049] In some embodiments, the thickness of the alumina gradient film 131 is less than the thickness of the alumina film 132. The ratio of oxygen atoms to aluminum atoms in the alumina film 132 is greater than that in the alumina gradient film 131, meaning the oxygen content in the alumina gradient film 131 is lower and the oxygen content in the alumina film 132 is higher. Furthermore, the protective effect of alumina is positively correlated with oxygen content. Therefore, by setting a smaller thickness for the alumina gradient film 131 (which offers moderate protection) and a larger thickness for the alumina film 132 (which provides superior protection), the overall protective effect of the alumina layer 13 can be improved.

[0050] In some embodiments, the thickness of the alumina gradient film 131 is 50 nm to 1 μm, for example 50 nm, 100 nm, 200 nm, 400 nm, 600 nm, 800 nm or 1 μm.

[0051] The thickness of the alumina film 132 is 19 μm to 49.95 μm, for example, 19 μm, 20 μm, 30 μm, 40 μm, 45 μm, 49 μm or 49.95 μm. The thickness of the alumina film 132 is within the above range, and a larger thickness can improve the overall protective effect of the alumina layer 13.

[0052] Figure 3 This is another structural schematic diagram of the ventilation panel provided in an embodiment of this disclosure.

[0053] refer to Figure 3 The ventilated panel includes a panel body 20, an aluminum layer 21, and a protective layer 22. The panel body 20 is made of metallic aluminum; the aluminum layer 21 is located on the panel body 20; the protective layer 22 is located on the surface of the aluminum layer 21 facing away from the panel body 20, and the protective layer 22 is an aluminum fluoride layer 24; the aluminum fluoride layer 24 includes an aluminum fluoride gradient film 241 and an aluminum fluoride film 242. The aluminum fluoride gradient film 241 is located between the aluminum layer 21 and the aluminum fluoride film 242. In the direction from the aluminum layer 21 to the aluminum fluoride film 242, the fluorine atom content in the aluminum fluoride gradient film 241 gradually increases, and the ratio of fluorine atom content to aluminum atom content in the aluminum fluoride film 242 is greater than the ratio of fluorine atom content to aluminum atom content in the aluminum fluoride gradient film 241.

[0054] It should be noted that the ventilation panel 20 and aluminum layer 21 in this embodiment can be referred to the relevant descriptions of the ventilation panel 10 and aluminum layer 11 in the above embodiments, and will not be repeated here.

[0055] In this embodiment, the aluminum layer 21 can improve the adhesion between the panel body 20 and the protective layer 22. Specifically, the aluminum layer 21 can form a tighter chemical bond with the panel body 20 containing metallic aluminum, and the aluminum layer 21 can be interconnected with the aluminum atoms in the panel body 20 through metallic bonds. Metallic bonds have strong directionality and strength, and this tight metallic bond bonding results in a greater adhesion between the aluminum layer 21 and the panel body 20. When an aluminum fluoride layer 24 is deposited on the aluminum layer 21, chemical bonds can be formed between aluminum atoms and fluorine atoms, and the formation of these chemical bonds makes the adhesion between the aluminum fluoride layer 24 and the aluminum layer 21 even stronger. Therefore, the aluminum layer 21 improves the adhesion between the protective layer 22 and the panel body 20 through metallic bonds with the panel body 20 and chemical bonds with the aluminum fluoride layer 24.

[0056] In some embodiments, the thickness of the aluminum fluoride layer 24 is 20 μm to 50 μm. A thickness within this range provides sufficient protection for the ventilation panel without increasing the cost of the ventilation panel due to an excessively thick aluminum fluoride layer 24.

[0057] The aluminum fluoride layer 24 includes an aluminum fluoride gradient film 241 and an aluminum fluoride film 242. In the direction from the aluminum layer 21 to the aluminum fluoride film 242, the fluorine atom content in the aluminum fluoride gradient film 241 gradually increases. This causes the coefficient of thermal expansion of the aluminum fluoride gradient film 241 to gradually transition from the aluminum layer 21 to the aluminum fluoride film 242, reducing the thermal stress between the aluminum fluoride film 242 and the aluminum layer 21. This prevents the protective layer 22 from detaching or partially separating due to excessive thermal stress between the aluminum fluoride film 242 and the aluminum layer 21, thereby improving the protective effect of the protective layer 22. Furthermore, the ratio of fluorine atom content to aluminum atom content in the aluminum fluoride film 242 is greater than that in the aluminum fluoride gradient film 241. In other words, the aluminum fluoride film 242 has a higher fluorine content and fewer fluorine vacancies, resulting in better density and chemical stability, further enhancing its protective effect.

[0058] In some embodiments, the thickness of the aluminum fluoride gradient film 241 is less than the thickness of the aluminum fluoride film 242. The ratio of fluorine atoms to aluminum atoms in the aluminum fluoride film 242 is greater than that in the aluminum fluoride gradient film 241, meaning the fluorine content in the aluminum fluoride gradient film 241 is lower, while the fluorine content in the aluminum fluoride film 242 is higher. Furthermore, the protective effect of aluminum fluoride is positively correlated with the fluorine content. Therefore, by setting a smaller thickness for the aluminum fluoride gradient film 241 (which offers moderate protection) and a larger thickness for the aluminum fluoride film 242 (which provides superior protection), the overall protective effect of the aluminum fluoride layer 24 can be improved.

[0059] In some embodiments, the thickness of the aluminum fluoride gradient film 241 is 50 nm to 1 μm, for example 50 nm, 100 nm, 200 nm, 400 nm, 600 nm, 800 nm or 1 μm.

[0060] The thickness of the aluminum fluoride film 242 is 19 μm to 49.95 μm, for example, 19 μm, 20 μm, 30 μm, 40 μm, 45 μm, 49 μm, or 49.95 μm. The thickness of the aluminum fluoride film 242 is within the above range; a larger thickness improves the overall protective effect of the aluminum fluoride layer 24.

[0061] Figure 4 This is another structural schematic diagram of the ventilation panel provided in an embodiment of the present disclosure.

[0062] refer to Figure 4The ventilated panel includes a panel body 30, an aluminum layer 31, and a protective layer 32. The panel body 30 is made of metallic aluminum; the aluminum layer 31 is located on the panel body 30; the protective layer 32 is located on the surface of the aluminum layer 31 facing away from the panel body 30, and the protective layer 32 consists of an aluminum oxide layer 33 and an aluminum fluoride layer 34; the aluminum oxide layer 33 includes an aluminum oxide gradient film 331 and an aluminum oxide film 332. The aluminum oxide gradient film 331 is located between the aluminum layer 31 and the aluminum oxide film 332. In the direction from the aluminum layer 31 to the aluminum oxide film 332, the oxygen atom content in the aluminum oxide gradient film 331 gradually increases, while the oxygen atom content in the aluminum oxide film 332 gradually decreases. The ratio of fluorine content to aluminum atom content is greater than the ratio of oxygen atom content to aluminum atom content in aluminum oxide gradient film 331; aluminum fluoride layer 34 includes aluminum fluoride gradient film 341 and aluminum fluoride film 342. Aluminum fluoride gradient film 341 is located between aluminum layer 31 and aluminum fluoride film 342. In the direction from aluminum layer 31 to aluminum fluoride film 342, the fluorine atom content in aluminum fluoride gradient film 341 gradually increases. The ratio of fluorine atom content to aluminum atom content in aluminum fluoride film 342 is greater than the ratio of fluorine atom content to aluminum atom content in aluminum fluoride gradient film 341.

[0063] It should be noted that the ventilation panel 20, aluminum layer 21 and aluminum oxide layer 33 in this embodiment can refer to the ventilation panel 10, aluminum layer 11 and aluminum oxide layer 13 in the above embodiment, and the aluminum fluoride layer 34 in this embodiment can refer to the aluminum fluoride layer 24 in the above embodiment, and will not be described again here.

[0064] Understandably, among them, Figure 4 This example only illustrates the case where the protective layer 32 consists of an aluminum oxide layer 33 and an aluminum fluoride layer 34, with the aluminum oxide layer 33 located between the aluminum layer 31 and the aluminum fluoride layer 34. In practice, the aluminum fluoride layer 34 could also be located between the aluminum layer 31 and the aluminum oxide layer 33. When the aluminum oxide layer 33 is located between the aluminum layer 31 and the aluminum fluoride layer 34, the aluminum layer 31 is located between the aluminum oxide layer 33 and the ventilation panel. As discussed above, the aluminum layer 31 can improve the bonding strength between the aluminum oxide layer 33 and the ventilation panel; that is, the aluminum layer 31 can improve the bonding strength between the protective layer 32 and the ventilation panel. When the aluminum fluoride layer 34 is located between the aluminum layer 31 and the aluminum oxide layer 33, as discussed above, the aluminum layer 31 can improve the bonding strength between the aluminum fluoride layer 34 and the ventilation panel; that is, the aluminum layer 31 can also improve the bonding strength between the protective layer 32 and the ventilation panel.

[0065] In this embodiment of the disclosure, the protective layer 32 is an aluminum oxide layer 33 and an aluminum fluoride layer 34. Compared with the protective layer 32 being an aluminum oxide layer 33 or an aluminum fluoride layer 34, the protective layer 32 being an aluminum oxide layer 33 and an aluminum fluoride layer 34 can further improve the protective effect of the protective layer 32.

[0066] In some embodiments, the protective layer 32 comprises an aluminum oxide layer 33 and an aluminum fluoride layer 34, with the aluminum oxide layer 33 located between the aluminum layer 31 and the aluminum fluoride layer 34. Since the bonding force between the aluminum oxide layer 33 and the aluminum layer 31 is greater than the bonding force between the aluminum fluoride layer 34 and the aluminum fluoride layer 34, placing the aluminum oxide layer 33 between the aluminum layer 31 and the aluminum fluoride layer 34 can further improve the bonding force between the protective layer 32 and the aluminum layer 31.

[0067] This disclosure also provides a method for preparing... Figure 1 The corresponding method for preparing the ventilation panel. It should be noted that for parts that are the same as or corresponding to those in the foregoing embodiments, please refer to the corresponding descriptions in the foregoing embodiments; these will not be repeated below.

[0068] Figure 5 This is a schematic diagram of a structure for forming an aluminum layer in a sputtering cavity, provided by an embodiment of this disclosure.

[0069] refer to Figure 1 and Figure 5 The method for preparing the ventilated panel includes: providing a panel body 10, the material of which comprises aluminum; sputtering an aluminum target 50 using a pulsed power supply 41 to form an aluminum layer 11 on the panel body 10, the pulsed power supply 41 being a HIPIMS (High Power Impulse Magnetron Sputtering) power supply; continuing to sputter the aluminum target 50 to provide and ionize oxygen-containing gas to form a protective layer 12 on the aluminum layer 11 away from the panel body 10; during the process of providing and ionizing oxygen-containing gas, the gas flow rate of the oxygen-containing gas is gradually increased to a first gas flow rate within a first reaction time to form an aluminum oxide gradient film 131, and then the gas flow rate of the oxygen-containing gas is maintained at the first gas flow rate for a second reaction time to form an aluminum oxide film 132; during the process of providing and ionizing fluorine-containing gas, the gas flow rate of the fluorine-containing gas is gradually increased from 0 to a second gas flow rate within a third reaction time to form an aluminum fluoride gradient film, and then the gas flow rate of the fluorine-containing gas is maintained at the second gas flow rate for a fourth reaction time to form an aluminum fluoride film.

[0070] Before depositing the aluminum layer 11, the method for preparing the venting panel may include: providing a sputtering device, which includes: a sputtering chamber 40, a pulse power supply 41, a stage 42, a DC power supply 43, an induction coil 44, a target stage 45, an air inlet channel 46, a vacuum pump assembly 47, and a baffle 48.

[0071] Using a HIPIMS power supply as the pulse power source 41 to sputter aluminum target 50, that is, using high-power pulsed magnetron sputtering to deposit aluminum layer 11 and protective layer 12, compared with using ordinary magnetron sputtering to deposit aluminum layer 11 and protective layer 12, the high-power pulsed magnetron sputtering deposition of aluminum layer 11 and protective layer 12 can improve the density of aluminum layer 11 and protective layer 12, so that the protective effect of protective layer 12 can be further improved.

[0072] In some embodiments, the power of the pulse power supply 41 is 2kW to 10kW, for example, 2kW, 4kW, 6kW, 8kW or 10kW. The power of the pulse power supply 41 is within the above range, and a larger power of the pulse power supply 41 is beneficial to improving the density of the aluminum layer 11 and the protective layer 12.

[0073] The voltage of the pulse power supply 41 is -100V to -8000V, for example -100V, -500V, -1000V, -2000V, -4000V, -6000V, -7000V or -8000V.

[0074] The pulse power supply 41 has a current rating of 10A to 40A, for example, 10A, 20A, 30A or 40A.

[0075] The frequency of the pulse power supply 41 is 1Hz to 200Hz, for example, 1Hz, 10Hz, 50Hz, 100Hz, 150Hz or 200Hz.

[0076] The pulse duration of the pulse power supply 41 is 1μs to 100μs, for example, 1μs, 10μs, 30μs, 50μs, 80μs or 100μs.

[0077] The purity of the sputtered aluminum target 50 is greater than 99.99%.

[0078] Oxygen-containing gas can be O2 or O3.

[0079] The stage 42 is located inside the sputtering cavity 40 and is used to support the panel body 10.

[0080] The DC power supply 43 is electrically connected to the panel body 10 via the stage 42. The DC power supply 43 is used to provide an electric field around the panel body 10, so that the ions deposited on the panel body 10 have higher energy, promoting their diffusion and rearrangement on the panel body 10, thereby forming a denser and more uniform aluminum layer 11 and protective layer 12.

[0081] The voltage of the DC power supply 43 can be from -10V to -100V, for example, -10V, -20V, -50V, -80V or -100V.

[0082] The induction coil 44 is located on one side of the ventilation panel. The induction coil 44 generates an induced electric field in the cavity by applying an alternating electromagnetic field, which excites electrons to collide with gas molecules, increases the ionization rate of the gas, and can also enhance the bombardment effect of ions on the surface of the panel body 10, which helps to improve the density and adhesion of the aluminum layer 11 and the protective layer 12.

[0083] In some embodiments, the distance D between the induction coil 44 and the panel body 10 is 1cm to 200cm, for example 1cm, 10cm, 50cm, 100cm, 150cm or 200cm.

[0084] The number of turns of the induction coil 44 is 10 to 100, for example, 10, 30, 50, 80 or 100.

[0085] The current intensity passed through the induction coil 44 is 0.1A to 10A, for example, 0.1A, 0.5A, 1A, 3A, 5A or 10A.

[0086] The induction coil 44 generates a magnetic field strength of 1G to 200G, for example, 1G, 5G, 10G, 50G, 100G, 150G or 200G.

[0087] The target platform 45 is used to fix the aluminum target 50.

[0088] The intake passage 46 is used to supply reactant gas or cleaning gas. The intake passage 46 can be connected to an radio frequency power supply (not shown) for ionizing the gas supplied by the intake passage 46.

[0089] Vacuum pump assembly 47 is used to adjust the vacuum level inside sputtering chamber 40.

[0090] In some embodiments, during the sputtering of the aluminum target 50, the vacuum level inside the sputtering chamber 40 is 1 torr to 35 torr, for example, 1 torr, 5 torr, 10 torr, 15 torr, 20 torr, 30 torr or 35 torr.

[0091] Figure 6 This is another structural schematic diagram of forming an aluminum layer in a sputtering cavity, provided by an embodiment of this disclosure.

[0092] refer to Figure 5 and Figure 6Before sputtering the aluminum target 50, a baffle 48 is placed on one side of the panel body 10. After sputtering the aluminum target 50, the baffle 48 is removed only after the plasma formed by the sputtered target has stabilized, allowing the stabilized plasma to deposit on the panel body 10 and improve the quality of the film layer on the panel body 10. Specifically, the stability of the plasma can be determined by detecting the reflected power of the pulse power supply 41 or by confirming the glow color of the plasma through the observation window of the sputtering cavity 40. The baffle 48 can be a retractable baffle 48, which is in a stretched state before sputtering the aluminum target 50 (e.g., Figure 6 After sputtering aluminum target 50 and the plasma stabilizes, baffle 48 is in a contracted state (e.g., Figure 5 ).

[0093] In some embodiments, the first reaction time is 5s to 20s, for example 5s, 7s, 10s, 15s or 20s.

[0094] The second reaction time is 3 to 10 minutes, for example, 3 minutes, 5 minutes, 7 minutes, 9 minutes, or 10 minutes. A longer second reaction time within this range can produce a thicker alumina film 132.

[0095] The first gas flow rate is 20 sccm to 800 sccm, for example, 20 sccm, 50 sccm, 100 sccm, 200 sccm, 400 sccm, 600 sccm or 800 sccm.

[0096] In some embodiments, a carrier gas (e.g., argon) is also provided while providing and ionizing oxygen-containing gas. The flow rate of the carrier gas is 5 sccm to 100 sccm, for example, 5 sccm, 10 sccm, 30 sccm, 50 sccm, 70 sccm or 100 sccm.

[0097] In some embodiments, before sputtering the aluminum target 50, the method for preparing the ventilated panel further includes providing and ionizing a cleaning gas to clean the panel body 10. This ensures the cleanliness of the surface of the panel body 10, facilitating better adhesion between the aluminum layer 11 and the panel body 10.

[0098] The cleaning gas can be at least one of ammonia, argon, and hydrogen. The cleaning gas can react with the oxides on the panel body 10 and remove the oxides from the panel body 10.

[0099] This disclosure also provides a method for preparing... Figure 3 The corresponding method for preparing the ventilation panel. It should be noted that the method for preparing the ventilation panel provided in this disclosure is... Figure 3 The corresponding method for preparing the ventilation panel, and the method for preparing... Figure 1The main difference in the fabrication methods of the corresponding ventilation panels lies in the gas provided and ionized. Specifically, Figure 3 The corresponding method for preparing the ventilation panel uses fluorine-containing gas for ionization, while Figure 1 The corresponding ventilation panel preparation method provides and ionizes oxygen-containing gas. Among them, [the gas is related to...]. Figure 1 The corresponding ventilation panels are prepared using the same methods or have similar characteristics. To avoid redundancy, they will not be described in detail below. Unless there are contradictions, Figure 1 The corresponding description of the preparation method for the ventilation panel also applies to Figure 3 The corresponding characteristics of the preparation method of the ventilation panel.

[0100] refer to Figure 3 and Figure 5 The method for preparing the ventilated panel includes: providing a panel body 20, the material of which is aluminum; sputtering an aluminum target 50 using a pulsed power supply 41 to form an aluminum layer 21 on the panel body 20, the pulsed power supply 41 being a HIPIMS (High Power Impulse Magnetron Sputtering) power supply; continuing to sputter the aluminum target 50, providing and ionizing a fluorine-containing gas to form a protective layer 22 on the aluminum layer 21 away from the panel body 20; during the process of providing and ionizing the fluorine-containing gas, the gas flow rate of the fluorine-containing gas is gradually increased from 0 to a second gas flow rate during a third reaction time to form an aluminum fluoride gradient film 241, and then the gas flow rate of the fluorine-containing gas is maintained at the second gas flow rate for a fourth reaction time to form an aluminum fluoride film 242.

[0101] Fluorine-containing gases can be at least one of CF4, C2F6, C3F8, C4F8, C4F6, SF6, and NF3.

[0102] In some embodiments, the third reaction time is 5s to 20s, for example 5s, 7s, 10s, 15s or 20s.

[0103] The fourth reaction time is 3 to 10 minutes, for example, 3 minutes, 5 minutes, 7 minutes, 9 minutes, or 10 minutes. A longer fourth reaction time within this range can produce a thicker aluminum fluoride film 242.

[0104] The second gas flow rate is 20 sccm to 800 sccm, for example, 20 sccm, 50 sccm, 100 sccm, 200 sccm, 400 sccm, 600 sccm or 800 sccm.

[0105] In some embodiments, a carrier gas (e.g., argon) is also provided while the fluorine-containing gas is being supplied and ionized. The flow rate of the carrier gas is 5 sccm to 100 sccm, for example, 5 sccm, 10 sccm, 30 sccm, 50 sccm, 70 sccm or 100 sccm.

[0106] This disclosure also provides a method for preparing... Figure 4 The corresponding method for preparing the ventilation panel. It should be noted that the method for preparing the ventilation panel provided in this disclosure is... Figure 4 The corresponding method for preparing the ventilation panel, and the method for preparing... Figure 1 and Figure 3 The main difference in the preparation methods of the corresponding ventilation panels lies in the different gases provided and ionized. Figure 4 In the corresponding method for preparing the ventilation panel, one of the oxygen-containing gas and the fluorine-containing gas is first provided and ionized, and then the other of the oxygen-containing gas and the fluorine-containing gas is provided and ionized. Figure 3 The corresponding method for preparing the ventilation panel provides and ionizes a fluorine-containing gas. Figure 1 The corresponding ventilation panel preparation method provides and ionizes oxygen-containing gas. Among them, [the gas is related to...]. Figure 1 and Figure 3 The corresponding ventilation panels are prepared using the same methods or have similar characteristics. To avoid redundancy, they will not be described in detail below. Unless there are contradictions, Figure 1 and Figure 3 The corresponding description of the preparation method for the ventilation panel also applies to Figure 4 The corresponding characteristics of the preparation method of the ventilation panel.

[0107] refer to Figure 4 and Figure 5The method for preparing the ventilated panel includes: providing a panel body 30, the material of which comprises aluminum; sputtering an aluminum target 50 using a pulsed power supply 41 to form an aluminum layer 31 on the panel body 30; the pulsed power supply 41 being HIPIMS (High Power Impulse Magnetron). Sputtering (high-power pulsed magnetron sputtering) power supply; continue sputtering aluminum target 50, first providing and ionizing one of the oxygen-containing gas and the fluorine-containing gas, then providing and ionizing the other of the oxygen-containing gas and the fluorine-containing gas; during the provision and ionization of the oxygen-containing gas, the gas flow rate of the oxygen-containing gas is gradually increased to the first gas flow rate within the first reaction time to form an alumina gradient film 331, and then the gas flow rate of the oxygen-containing gas is maintained at the first gas flow rate for the second reaction time to form an alumina film 332; during the provision and ionization of the fluorine-containing gas, the gas flow rate of the fluorine-containing gas is gradually increased from 0 to the second gas flow rate within the third reaction time to form an aluminum fluoride gradient film 341, and then the gas flow rate of the fluorine-containing gas is maintained at the second gas flow rate for the fourth reaction time to form an aluminum fluoride film 342.

[0108] It should be noted that Figure 4 This illustration only demonstrates the case where the protective layer 32 consists of an aluminum oxide layer 31 and an aluminum fluoride layer 31, with the aluminum oxide layer 31 located between the aluminum layer 31 and the aluminum fluoride layer 31. Specifically, it only illustrates the case where oxygen-containing gas is provided and ionized first, followed by fluorine-containing gas. In reality, the aluminum fluoride layer 31 could also be located between the aluminum layer 31 and the aluminum oxide layer 31, meaning that fluorine-containing gas could also be provided and ionized first, followed by oxygen-containing gas.

[0109] In some embodiments, the first reaction time is 5s to 20s, for example 5s, 7s, 10s, 15s or 20s.

[0110] The second reaction time is 3 to 10 minutes, for example, 3 minutes, 5 minutes, 7 minutes, 9 minutes, or 10 minutes. A longer second reaction time within this range can produce a thicker alumina film 332.

[0111] The first gas flow rate is 20 sccm to 800 sccm, for example, 20 sccm, 50 sccm, 100 sccm, 200 sccm, 400 sccm, 600 sccm or 800 sccm.

[0112] The third reaction time is 5s to 20s, for example, 5s, 7s, 10s, 15s or 20s.

[0113] The fourth reaction time is 3 min to 10 min, for example, 3 min, 5 min, 7 min, 9 min, or 10 min. A longer fourth reaction time within this range can produce a thicker aluminum fluoride film 342.

[0114] The second gas flow rate is 20 sccm to 800 sccm, for example, 20 sccm, 50 sccm, 100 sccm, 200 sccm, 400 sccm, 600 sccm or 800 sccm.

[0115] According to some embodiments of this disclosure, another aspect of this disclosure also provides a deposition chamber, including the ventilated panel described in any of the above embodiments, or including a ventilated panel prepared by the preparation method of the ventilated panel described in any of the above embodiments. It should be noted that the parts that are the same as or corresponding to the foregoing embodiments can be referred to the corresponding descriptions of the foregoing embodiments, and will not be repeated below.

[0116] The deposition chamber is used to fabricate thin films through CVD or ALD reactions. CVD includes atmospheric pressure chemical vapor deposition (APCVD), low pressure chemical vapor deposition (LPCVD), ultra-high vacuum chemical vapor deposition (UHVCVD), metal-organic chemical vapor deposition (MOCVD), and plasma-enhanced chemical vapor deposition (PECVD), etc.

[0117] Those skilled in the art will understand that the above embodiments are specific examples of implementing this disclosure, and in practical applications, various changes in form and detail may be made without departing from the spirit and scope of this disclosure. Any person skilled in the art can make various alterations and modifications without departing from the spirit and scope of this disclosure; therefore, the scope of protection of this disclosure should be determined by the scope defined in the claims.

Claims

1. A ventilated panel, characterized in that, include: The panel body is made of aluminum. An aluminum layer, the aluminum layer being located on the panel body; A protective layer is located on the surface of the aluminum layer facing away from the panel body, and the protective layer is an aluminum oxide layer and / or an aluminum fluoride layer; The alumina layer includes an alumina gradient film and an alumina film. The alumina gradient film is located between the aluminum layer and the alumina film. In the direction from the aluminum layer to the alumina film, the oxygen content in the alumina gradient film gradually increases. The ratio of oxygen content to aluminum content in the alumina film is greater than the ratio of oxygen content to aluminum content in the alumina gradient film. The aluminum fluoride layer includes an aluminum fluoride gradient film and an aluminum fluoride film. The aluminum fluoride gradient film is located between the aluminum layer and the aluminum fluoride film. In the direction from the aluminum layer to the aluminum fluoride film, the fluorine atom content in the aluminum fluoride gradient film gradually increases. The ratio of fluorine atom content to aluminum atom content in the aluminum fluoride film is greater than the ratio of fluorine atom content to aluminum atom content in the aluminum fluoride gradient film.

2. The ventilation panel according to claim 1, characterized in that, The thickness of the aluminum layer is 1μm to 2μm; the thickness of the alumina layer is 20μm to 50μm; and the thickness of the aluminum fluoride layer is 20μm to 50μm.

3. The ventilation panel according to claim 1, characterized in that, The thickness of the alumina gradient film is less than the thickness of the alumina film; the thickness of the aluminum fluoride gradient film is less than the thickness of the aluminum fluoride film.

4. The ventilation panel according to claim 1, characterized in that, The thickness of the alumina gradient film is 50 nm to 1 μm, the thickness of the alumina film is 19 μm to 49.95 μm, the thickness of the aluminum fluoride gradient film is 50 nm to 1 μm, and the thickness of the aluminum fluoride film is 19 μm to 49.95 μm.

5. The ventilation panel according to claim 1, characterized in that, The protective layer consists of an aluminum oxide layer and an aluminum fluoride layer, with the aluminum oxide layer located between the aluminum layer and the aluminum fluoride layer.

6. A method for preparing a ventilated panel, characterized in that, include: A panel body is provided, wherein the material of the panel body comprises aluminum. An aluminum target is sputtered using a pulsed power supply to form an aluminum layer on the panel body. The pulsed power supply is a HIPIMS power supply. The aluminum target is sputtered to provide and ionize an oxygen-containing gas or a fluorine-containing gas, or one of the oxygen-containing gas and the fluorine-containing gas is provided and ionized first, and then the other of the oxygen-containing gas and the fluorine-containing gas is provided and ionized, to form a protective layer on the aluminum layer away from the panel body. During the process of providing and ionizing the oxygen-containing gas, the gas flow rate of the oxygen-containing gas is gradually increased from 0 to the first gas flow rate during the first reaction time to form an alumina gradient film. Then, the gas flow rate of the oxygen-containing gas is maintained at the first gas flow rate for the second reaction time to form an alumina film. During the process of supplying and ionizing the fluorine-containing gas, the gas flow rate of the fluorine-containing gas is gradually increased from 0 to the second gas flow rate during the third reaction time to form an aluminum fluoride gradient film. Then, the gas flow rate of the fluorine-containing gas is maintained at the second gas flow rate for the fourth reaction time to form an aluminum fluoride film.

7. The method for preparing the ventilated panel according to claim 6, characterized in that, The first reaction time is 5s to 20s; the second reaction time is 3min to 10min; the first gas flow rate is 20sccm to 800sccm; the third reaction time is 5s to 20s; the fourth reaction time is 3min to 10min; and the second gas flow rate is 20sccm to 800sccm.

8. The method for preparing the ventilated panel according to claim 6, characterized in that, The power of the pulse power supply is 2kW to 10kW, the voltage of the pulse power supply is -100V to -8000V, the current of the pulse power supply is 10A to 40A, the frequency of the pulse power supply is 1Hz to 200Hz, and the pulse duration width of the pulse power supply is 1μs to 100μs.

9. The method for preparing the ventilated panel according to claim 6, characterized in that, Before sputtering the aluminum target, the method for preparing the venting panel further includes: Provide and ionize cleaning gas to clean the panel body.

10. A deposition cavity, characterized in that, It includes the ventilation panel according to any one of claims 1 to 5, or it includes the ventilation panel prepared by the method of preparing the ventilation panel according to any one of claims 6 to 9.

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