Polishing process for sapphire silicon wafer

Abstract

The invention relates to the technical field of silicon wafer polishing, and discloses a polishing process for a sapphire silicon wafer, which comprises the following steps: S1, pretreatment: cleaning the sapphire silicon wafer, and corroding the surface of the silicon wafer by using a chemical corrosive to remove an oxide layer and a damaged layer on the surface; and S2, rough polishing treatment is conducted, specifically, the sapphire silicon wafer is placed on a polishing platform, polishing is conducted through a polishing solution containing aluminum oxide particles, and the polishing effect is monitored in real time. According to the polishing process for the sapphire silicon wafer, by optimizing the components and the particle size of the polishing solution and reasonably setting polishing parameters, the surface roughness of the sapphire silicon wafer can be effectively reduced, the surface roughness of the sapphire silicon wafer reaches the nanoscale level, and the surface quality of the sapphire silicon wafer is improved; the polishing efficiency is remarkably improved, the polishing time is shortened, and the technology is suitable for sapphire silicon wafers of different sizes and thicknesses and has wide applicability.

Description

Technical Field

[0001] This invention relates to the field of silicon wafer polishing technology, specifically a polishing process for sapphire silicon wafers. Background Technology

[0002] Sapphire, due to its excellent physical and chemical properties, such as high hardness, high thermal conductivity, good insulation, and chemical stability, is widely used in semiconductors, optics, and electronic devices. Sapphire silicon wafers, composite materials formed by combining a sapphire substrate with silicon, have broad application prospects. However, the surface quality of sapphire silicon wafers is crucial to their performance and application effects, thus placing extremely high demands on surface polishing technology.

[0003] A search revealed that Chinese invention patent CN114800220B discloses a polishing method for silicon dioxide films. This method uses a mutual polishing technique on the SiO2 layer to replace traditional polishing methods, avoiding the need for different polishing pads and parameters for different SiO2 films, reducing the complexity of the polishing process and lowering polishing costs. This polishing process uses physical vapor deposition or chemical vapor deposition to obtain the epitaxial wafer to be polished. However, the above polishing process lacks multi-stage polishing capabilities, and in actual operation, it is prone to scratches and microcracks. Furthermore, to improve the surface quality and performance of the silicon wafer, a significant amount of time is required for polishing, resulting in low polishing efficiency. Summary of the Invention

[0004] (a) Technical problems to be solved

[0005] To address the shortcomings of existing technologies, this invention provides a polishing process for sapphire silicon wafers. By optimizing the composition and particle size of the polishing slurry and setting reasonable polishing parameters, the surface roughness of the sapphire silicon wafers can be effectively reduced to the nanometer level, thereby improving its surface quality. Through a step-by-step polishing process design of coarse and fine polishing, the polishing efficiency is significantly improved, the polishing time is shortened, and the problem of low polishing efficiency and effect due to the lack of graded polishing function, which affects the quality and performance of sapphire silicon wafers, is solved.

[0006] (II) Technical Solution

[0007] To achieve the above objectives, the present invention provides the following technical solution: a polishing process for sapphire silicon wafers, comprising the following steps:

[0008] S1. Pretreatment: The sapphire silicon wafer is cleaned and the surface of the wafer is etched with a chemical etchant to remove the oxide layer and the damaged layer on the surface.

[0009] S2. Rough polishing: Place the sapphire silicon wafer on a polishing platform and polish it with a polishing slurry containing alumina particles, while monitoring the polishing effect in real time.

[0010] S3. Fine polishing: Replace the polishing fluid with a polishing fluid containing nano-sized silica particles for fine polishing, and monitor the polishing effect in real time.

[0011] S4. Rinsing and Drying: Rinse the polished sapphire silicon wafer with deionized water and then dry it.

[0012] Preferably, in the S2 coarse polishing process, the particle size of the polishing slurry is 0.1-0.5 micrometers, the rotation speed of the polishing platform is 30-60 rpm, the polishing time is 10-30 minutes, and the pressure applied during the polishing process is 100-300 g / cm².

[0013] Preferably, in the S3 fine polishing process, the particle size of the polishing slurry is 10-50 nanometers; the rotation speed of the polishing platform is adjusted to 20-50 rpm, and the polishing time is 15-45 minutes; during the polishing process, the applied pressure is 50-150 g / cm².

[0014] Preferably, the polishing platform includes a platform frame, on which a fixing component for fixing and rotating the silicon wafer body is provided, and a polishing mechanism for polishing the fixed silicon wafer body.

[0015] The polishing mechanism includes a polishing disc and an adjusting component for driving the polishing disc up and down and for tilting it.

[0016] The polishing disc is hollow, and a fine polishing pad and a coarse polishing pad are detachably installed on the top and bottom of the polishing disc, respectively.

[0017] Preferably, the polishing disc has openings at both the top and bottom, and two symmetrical pipes are fixedly connected to the outer surface of the polishing disc. The other end of each pipe is rotatably connected to a sleeve, and the two pipes extend into the interior of the two sleeves respectively. Inlets are opened at the top and bottom of one end of each pipe, and a blocking block is fixedly connected to the inner bottom of the two sleeves. A partition plate is fixedly connected inside the polishing disc, and the two sides of the partition plate have downward openings and upward openings respectively.

[0018] Preferably, the polishing mechanism includes a sliding seat mounted on the top of the platform frame and a No. 1 cylinder for driving the sliding seat back and forth, and a movable frame is fixedly connected to the sliding end of the sliding seat;

[0019] The adjusting components include a second cylinder for driving the polishing disc up and down and an adjusting cylinder for adjusting the rotation of the polishing disc.

[0020] Preferably, the adjusting member further includes a sliding frame slidably connected to one side of the movable frame, and a connecting frame is fixedly connected to one side of the sliding frame;

[0021] The connecting frame has a U-shaped tube slidably connected inside, and two sleeves are fixedly connected to the bottom end of the U-shaped tube. A liquid pump is fixedly connected to the movable frame, and the outlet of the liquid pump is connected to the inside of the U-shaped tube through a telescopic tube.

[0022] Preferably, the sliding frame is rotatably connected to a drive shaft, and the drive shaft is connected to two pipes via two belt sets. A gear is fixedly connected to the outer surface of the drive shaft, and a toothed plate frame that meshes with the outer surface of the gear is fixedly connected to the telescopic end of the adjusting cylinder. The adjusting cylinder is fixed inside the sliding frame.

[0023] (III) Beneficial Effects

[0024] Compared with the prior art, the present invention provides a polishing process for sapphire silicon wafers, which has the following beneficial effects:

[0025] 1. This invention effectively reduces the surface roughness of sapphire silicon wafers to the nanometer level by optimizing the composition and particle size of the polishing slurry and setting reasonable polishing parameters, thereby improving its surface quality. Through the step-by-step polishing process design of rough polishing and fine polishing, the generation of scratches and microcracks is reduced, resulting in significantly improved polishing efficiency and shortened polishing time. This process is applicable to sapphire silicon wafers of different sizes and thicknesses and has wide applicability.

[0026] 2. This invention provides fine polishing pads and coarse polishing pads at the top and bottom of the polishing disc, respectively. This allows for the switching between coarse and fine polishing when the polishing disc is flipped and adjusted using an adjusting mechanism. This improves the functionality and efficiency of the polishing mechanism and solves the problem that existing polishing platforms require manual replacement of the polishing disc or the use of multiple polishing mechanisms to achieve fine and coarse polishing of silicon wafers, resulting in low efficiency.

[0027] 3. This invention, through the setting of a fixing component, can fix the silicon wafer to be processed and drive the fixed silicon wafer to rotate. Combined with the polishing mechanism, a polishing process can be formed. Through the setting of the liquid pump, the polishing liquid collected in the material tank can be circulated to the polishing mechanism, forming a polishing liquid recycling operation. Through the setting of the vibrator, the polishing liquid located in the material tank is vibrated in real time, thereby keeping the nanoparticles in the polishing liquid in a constant active state, avoiding the problem that the nanoparticles are in a sedimented state, which would lead to uneven distribution of nanoparticles during subsequent polishing liquid recycling and affect the subsequent polishing performance. Attached Figure Description

[0028] Figure 1 This is a schematic diagram of the polishing process for sapphire silicon wafers according to the present invention;

[0029] Figure 2 This is a schematic diagram of the polishing platform of the present invention;

[0030] Figure 3 For the present invention Figure 2 A cross-sectional side view of the polishing platform;

[0031] Figure 4 For the present invention Figure 3 A cross-sectional schematic diagram of the fixed component in the middle;

[0032] Figure 5 For the present invention Figure 2 Schematic diagram of the polishing mechanism;

[0033] Figure 6 For the present invention Figure 5 Schematic diagram of the structure of the adjustment component;

[0034] Figure 7 For the present invention Figure 6 A schematic diagram showing the connection between the adjustment component and the polishing disc;

[0035] Figure 8 For the present invention Figure 7 A schematic diagram of the cross-section of the polishing disc.

[0036] In the diagram: 1. Platform rack; 2. Silicon wafer body; 3. Storage rack; 4. Drying fan;

[0037] 5. Fixing components; 51. Feed trough; 52. Flow guide; 53. Conical cover; 54. Motor; 55. Negative pressure frame; 56. Suction cup; 57. Suction pump;

[0038] 6. Polishing mechanism; 61. Sliding seat; 62. No. 1 cylinder; 63. Movable frame; 64. U-shaped tube; 65. Liquid pump;

[0039] 66. Polishing disc; 661. Pipe; 662. Sleeve; 663. Inlet; 664. Block; 665. Divider; 666. Downward opening; 667. Upward opening;

[0040] 67. Adjusting component; 671. No. 2 cylinder; 672. Adjusting cylinder; 673. Sliding frame; 674. Connecting frame; 675. Drive shaft; 676. Gear; 677. Gear plate frame; 678. Belt assembly. Detailed Implementation

[0041] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0042] Example 1:

[0043] See attached document Figure 1 A polishing process for sapphire silicon wafers includes the following steps:

[0044] S1. Pretreatment: The sapphire silicon wafer is cleaned and the surface of the wafer is etched with a chemical etchant to remove the oxide layer and the damaged layer on the surface.

[0045] Specifically, the sapphire silicon wafer is placed in an ultrasonic cleaner and cleaned with deionized water for 10-15 minutes to remove surface dust and impurities.

[0046] The sapphire silicon wafer is then immersed in a mixed solution of hydrofluoric acid and nitric acid to slightly etch the surface, removing the oxide layer and damaged layer. The etching time is 5-8 minutes.

[0047] S2. Rough polishing: Place the sapphire silicon wafer on the polishing platform and polish it with a polishing slurry containing alumina particles. Monitor the polishing effect in real time and adjust the polishing speed, polishing time and polishing pressure in real time according to the polishing situation.

[0048] S3. Fine polishing: Replace the polishing fluid with a polishing fluid containing nano-sized silica particles for fine polishing, and monitor the polishing effect in real time, and adjust the polishing speed, polishing time and polishing pressure in real time according to the polishing situation;

[0049] Before polishing begins, uniformly apply nano-sized silica polishing slurry to the polishing pad or silicon wafer, ensuring even coverage. This can be done by spraying or dripping.

[0050] Nanoscale silica particles are widely used in CMP polishing slurries due to their low hardness, good dispersibility, and chemical stability. Their particle size is typically between 10-50 nanometers, effectively reducing surface damage during polishing while improving polishing efficiency. Furthermore, the surface of nanoscale silica particles is rich in hydroxyl groups (Si-OH), which can undergo a solid-phase chemical reaction with the sapphire surface to generate a softer reaction layer, thus achieving efficient and gentle polishing.

[0051] S4. Rinsing and Drying: Rinse the polished sapphire silicon wafer with deionized water and then dry it.

[0052] Specifically, the polished sapphire silicon wafer is rinsed with deionized water to remove residual polishing liquid and particles from the surface, and then the sapphire silicon wafer is dried, which can be done by nitrogen blowing or natural drying.

[0053] Record various parameters during the polishing process, such as rotation speed, applied pressure, and polishing time, and analyze the polishing effect to provide data support for subsequent process optimization.

[0054] By optimizing the composition and particle size of the polishing slurry, and by setting reasonable polishing parameters, the surface roughness of sapphire silicon wafers can be effectively reduced to the nanometer level, thereby improving their surface quality.

[0055] By designing a step-by-step polishing process that includes rough polishing and fine polishing, the polishing efficiency is significantly improved and the polishing time is shortened.

[0056] By controlling the polishing pressure and rotation speed during the polishing process, the generation of scratches and microcracks can be effectively reduced, thereby improving the integrity and reliability of sapphire silicon wafers.

[0057] This process is applicable to sapphire silicon wafers of different sizes and thicknesses, and has wide applicability.

[0058] In the S2 coarse polishing process, the particle size of the polishing slurry is 0.1-0.5 micrometers, the rotation speed of the polishing platform is 30-60 rpm, the polishing time is 10-30 minutes, and the pressure applied during the polishing process is 100-300 g / cm².

[0059] In the S3 fine polishing process, the particle size of the polishing slurry is 10-50 nanometers; the rotation speed of the polishing platform is adjusted to 20-50 rpm, and the polishing time is 15-45 minutes; during the polishing process, the applied pressure is 50-150 g / cm².

[0060] See attached document Figures 2 to 8 The polishing platform includes a platform frame 1, on which a fixing component 5 for fixing and rotating the silicon wafer body 2 and a polishing mechanism 6 for polishing the fixed silicon wafer body 2 are provided.

[0061] Storage racks 3 are provided on both sides of the top of the platform rack 1, and a drying fan 4 is provided under one of the storage racks 3;

[0062] The polishing mechanism 6 includes a polishing disc 66 and an adjusting member 67 for driving the polishing disc 66 up and down and for tilting it.

[0063] When the polishing disc 66 contacts the top of the silicon wafer body 2 and the silicon wafer is rotated by the fixing component 5, the polishing disc 66 can polish the silicon wafer body 2. The polishing disc 66 can be flipped and adjusted by the setting of the adjusting component 67.

[0064] The polishing disc 66 is hollow, and the top and bottom of the polishing disc 66 are respectively detachably equipped with a fine polishing pad and a coarse polishing pad;

[0065] Fine polishing pads and coarse polishing pads are respectively provided at the top and bottom of the polishing disc 66. This allows for the switching between coarse and fine polishing when the polishing disc 66 is flipped and adjusted in conjunction with the adjusting component 67. This improves the functionality and polishing efficiency of the polishing mechanism 6 and solves the problem that existing polishing platforms require manual replacement of the polishing disc 66 or the use of multiple polishing mechanisms 6 to achieve fine and coarse polishing of silicon wafers, resulting in low efficiency.

[0066] See attached document Figure 7 and Figure 8 The polishing disc 66 has openings at both the top and bottom. Two symmetrical pipes 661 are fixedly connected to the outer surface of the polishing disc 66. The other ends of the two pipes 661 are rotatably connected to sleeves 662. The two pipes 661 extend into the interior of the two sleeves 662. The top and bottom of one end of the two pipes 661 are provided with inlets 663. The bottom inner of the two sleeves 662 is fixedly connected with a blocking block 664. The interior of the polishing disc 66 is fixedly connected with a partition plate 665. The two sides of the partition plate 665 are respectively provided with downward openings 666 and upward openings 667.

[0067] Both ends of the polishing disc 66 are connected to the interior of the two sleeves 662 via pipes 661, which facilitates the entry of polishing fluid from the two sleeves 662 into the polishing disc 66 through pipes 661 and out through the openings on the polishing disc 66, thus forming a replenishment of polishing fluid during the polishing process.

[0068] The polishing disc 66 has a partition plate 665 inside, and the partition plate 665 has a downward opening 666 and an upward opening 667 on both sides, which facilitates the polishing liquid inside the two pipes 661 to enter the lower and upper layers of the partition plate 665 respectively, forming the polishing liquid replenishment work during fine polishing and rough polishing.

[0069] Both ends of the two pipes 661 have inlets 663 at the top and bottom, and both sleeves 662 have a blocking block 664 fixed to their inner bottom. This allows the sleeves 662 to connect with the lower cavity of the partition plate 665 through the pipes 661 during rough polishing with the polishing disc 66, thus replenishing the polishing fluid. At this time, the inlet 663 of the pipe 661, which connects to the upper cavity of the partition plate 665, is directly below, working with the blocking block 664 to prevent the polishing fluid from entering the upper cavity. Conversely, the same applies when fine polishing with the polishing disc 66. This provides a good polishing fluid replenishment function and allows for separate replenishment of polishing fluid during fine and rough polishing.

[0070] See attached document Figures 5 to 7 The polishing mechanism 6 includes a sliding seat 61 mounted on the top of the platform frame 1 and a first cylinder 62 for driving the sliding seat 61 back and forth. The sliding end of the sliding seat 61 is fixedly connected to a movable frame 63.

[0071] The sliding seat 61 consists of a guide rail frame and a movable seat. By starting the first cylinder 62, the movable seat can be driven to move horizontally along the position of the guide rail frame, which in turn can drive the movable frame 63 to move, thereby realizing the adjustment of the position of the polishing end of the polishing mechanism 6.

[0072] The adjusting component 67 includes a second cylinder 671 for driving the polishing disc 66 up and down and an adjusting cylinder 672 for adjusting the tilt of the polishing disc 66.

[0073] The second cylinder 671 is used to drive the polishing disc 66 to move up and down. The downward movement of the polishing disc 66 allows its bottom to contact the silicon wafer. Combined with the rotation of the silicon wafer, the polishing operation is completed. The upward movement of the polishing disc 66 not only facilitates the overall retraction of the polishing mechanism 6, but also makes it easy to adjust the polishing disc 66 by rotating it using the adjusting cylinder 672, thereby enabling the conversion between coarse and fine polishing and improving the functionality and practicality of the polishing mechanism 6.

[0074] See attached document Figures 5 to 7 The adjusting component 67 also includes a sliding frame 673 slidably connected to one side of the movable frame 63, and a connecting frame 674 is fixedly connected to one side of the sliding frame 673; the second cylinder 671 is fixed to the movable frame 63 by a bracket and is used to drive the connecting frame 674 up and down.

[0075] The sliding frame 673 is slidably connected to one side of the movable frame 63, so that the sliding frame 673 can be driven to move synchronously when the movable frame 63 is pushed forward, thereby realizing the extension and adjustment of the polishing mechanism 6 and the adjustment of the polishing position. Furthermore, the activation of the second cylinder 671 can drive the connecting frame 674 to move up and down, thereby adjusting the polishing disk 66 up and down, which facilitates the contact between the polishing disk 66 and the top of the silicon wafer to form the polishing operation.

[0076] A U-shaped tube 64 is slidably connected inside the connecting frame 674. Two sleeves 662 are respectively fixedly connected to the bottom end of the U-shaped tube 64. A liquid pump 65 is fixedly connected to the movable frame 63, and the outlet of the liquid pump 65 is connected to the inside of the U-shaped tube 64 through a telescopic tube.

[0077] The U-shaped tube 64 facilitates the injection of polishing liquid into the polishing disc 66 by the pump 65 to perform the polishing operation, and also facilitates the installation of the polishing disc 66 and improves the smoothness of its up-and-down movement.

[0078] Example 2: The difference from Example 1 is that;

[0079] See attached document Figure 6 and Figure 7 The sliding frame 673 is rotatably connected to a drive shaft 675, and the drive shaft 675 is connected to two pipes 661 via two belt sets 678. A gear 676 is fixedly connected to the outer surface of the drive shaft 675, and a toothed plate frame 677 that meshes with the outer surface of the gear 676 is fixedly connected to the telescopic end of the adjusting cylinder 672. The adjusting cylinder 672 is fixed inside the sliding frame 673.

[0080] By adjusting the up-and-down movement of the cylinder 672, the toothed plate frame 677 can be driven to move up and down. The up-and-down movement of the toothed plate frame 677 can drive the gear 676 to rotate through meshing, forming the forward and reverse rotation of the transmission shaft 675. The rotation of the transmission shaft 675 can drive the two sets of belts 678 to drive the two pipes 661 to rotate, thereby realizing the flip adjustment of the polishing disc 66, which has a good flip adjustment function.

[0081] Example 3: The difference from Example 1 is that;

[0082] See attached document Figure 3 and Figure 4 The fixing component 5 includes a material trough 51 embedded in the platform frame 1, and a flow guide 52 is fixedly connected inside the material trough 51 by a bracket. A conical shroud 53 is rotatably connected to the top of the flow guide 52. A motor 54 for rotating the conical shroud 53 is provided inside the flow guide 52. A negative pressure frame 55 is fixedly connected inside the flow guide 52, and a number of suction cups 56 are fixedly connected to the top of the negative pressure frame 55.

[0083] The guide shroud 52 is used to block the polishing liquid during the polishing process and to orderly discharge the polishing liquid to the bottom of the material tank 51 for collection. The suction cup 56 is used to fix the silicon wafer body 2 to be processed so that when the motor 54 and the conical cover 53 are rotated, the fixed silicon wafer can be directly driven to rotate. In conjunction with the use of the polishing mechanism 6, a large-area polishing operation of the silicon wafer is formed.

[0084] It should be noted here that the output shaft of the motor 54 and the bottom of the conical cover 53 are both fixedly connected with meshing bevel gears, so that the motor 54 can directly drive the conical cover 53 to rotate.

[0085] A suction pump 57 is fixedly connected inside the flow guide shroud 52, and the suction pump 57 is connected to the inside of the negative pressure frame 55 through a suction pipe, and the suction pipe is connected to the inside of the negative pressure frame 55 by a rotating sleeve.

[0086] The suction pump 57 is connected to an external power supply and control switch to suck air from the negative pressure frame 55 through the suction pipe, thereby fixing the silicon wafer placed on the top of the conical cover 53 with several suction cups 56, improving the stability of subsequent polishing. The rotating sleeve is designed so that when the suction pipe is connected to the inside of the negative pressure frame 55, it does not affect the normal rotation of the negative pressure frame 55.

[0087] Furthermore, the suction port of the liquid pump 65 is connected to the inner bottom of the material tank 51 through the suction pipe, and a vibrator is installed at the bottom of the material tank 51.

[0088] By setting up the liquid pump 65, the polishing liquid collected inside the material tank 51 can be circulated and discharged into the polishing mechanism 6, forming a polishing liquid recycling operation. By setting up the vibrator, the polishing liquid inside the material tank 51 is vibrated in real time, thereby keeping the nanoparticles in the polishing liquid in an active state in real time, avoiding the problem that the nanoparticles are in a sedimented state, which would lead to uneven distribution of nanoparticles during subsequent polishing liquid recycling and affect the subsequent polishing performance.

[0089] It should be noted that the term "comprising" or any other variation thereof is intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes said element.

[0090] Although embodiments of the invention have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made to these embodiments without departing from the principles and spirit of the invention, the scope of which is defined by the appended claims and their equivalents.

Claims

1. A polishing process for sapphire silicon wafers, characterized in that, Includes the following steps: S1. Pretreatment: The sapphire silicon wafer is cleaned and the surface of the wafer is etched with a chemical etchant to remove the oxide layer and the damaged layer on the surface. S2. Rough polishing: Place the sapphire silicon wafer on a polishing platform and polish it with a polishing slurry containing alumina particles, while monitoring the polishing effect in real time. S3. Fine polishing: Replace the polishing fluid with a polishing fluid containing nano-sized silica particles for fine polishing, and monitor the polishing effect in real time. S4. Rinsing and Drying: Rinse the polished sapphire silicon wafer with deionized water and then dry it.

2. The polishing process for sapphire silicon wafers according to claim 1, characterized in that: In the S2 coarse polishing process, the particle size of the polishing slurry is 0.1-0.5 micrometers, the rotation speed of the polishing platform is 30-60 revolutions per minute, the polishing time is 10-30 minutes, and the pressure applied during the polishing process is 100-300 grams per square centimeter.

3. The polishing process for sapphire silicon wafers according to claim 1, characterized in that: In the S3 fine polishing process, the particle size of the polishing slurry is 10-50 nanometers; the rotation speed of the polishing platform is adjusted to 20-50 rpm, and the polishing time is 15-45 minutes; during the polishing process, the applied pressure is 50-150 g / cm².

4. A polishing process for sapphire silicon wafers according to any one of claims 1-3, characterized in that: The polishing platform includes a platform frame, on which a fixing component for fixing and rotating the silicon wafer body is provided, and a polishing mechanism for polishing the fixed silicon wafer body. The polishing mechanism includes a polishing disc and an adjusting component for driving the polishing disc up and down and for tilting it. The polishing disc is hollow, and a fine polishing pad and a coarse polishing pad are detachably installed on the top and bottom of the polishing disc, respectively.

5. The polishing process for sapphire silicon wafers according to claim 4, characterized in that: The polishing disc has openings at both the top and bottom. Two symmetrical pipes are fixedly connected to the outer surface of the polishing disc. The other end of each pipe is rotatably connected to a sleeve, and the two pipes extend into the interior of the two sleeves. Inlets are opened at the top and bottom of one end of each pipe, and a blocking block is fixedly connected to the bottom of the inner side of each sleeve. A partition plate is fixedly connected inside the polishing disc, and the partition plate has downward openings and upward openings on both sides.

6. The polishing process for sapphire silicon wafers according to claim 5, characterized in that: The polishing mechanism includes a sliding seat mounted on the top of the platform frame and a No. 1 cylinder for driving the sliding seat back and forth. The sliding end of the sliding seat is fixedly connected to a movable frame. The adjusting components include a second cylinder for driving the polishing disc up and down and an adjusting cylinder for adjusting the rotation of the polishing disc.

7. The polishing process for sapphire silicon wafers according to claim 4, characterized in that: The adjusting component also includes a sliding frame slidably connected to one side of the movable frame, and a connecting frame is fixedly connected to one side of the sliding frame; The connecting frame has a U-shaped tube slidably connected inside, and two sleeves are fixedly connected to the bottom end of the U-shaped tube. A liquid pump is fixedly connected to the movable frame, and the outlet of the liquid pump is connected to the inside of the U-shaped tube through a telescopic tube.

8. The polishing process for sapphire silicon wafers according to claim 4, characterized in that: The sliding frame is internally connected to a drive shaft, which is connected to two pipes via two belt sets. A gear is fixedly connected to the outer surface of the drive shaft, and a toothed plate frame that meshes with the outer surface of the gear is fixedly connected to the telescopic end of the adjusting cylinder. The adjusting cylinder is fixed inside the sliding frame.

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