Transmission electron microscope in-situ biaxial plane stress mechanics experiment platform

Abstract

The invention relates to the technical field of mechanical research equipment, in particular to a transmission electron microscope in-situ biaxial plane stress mechanical experiment platform which comprises a supporting structure, a vertical driver and a horizontal driver. The vertical driver comprises a substrate outer frame, a first piezoelectric ceramic and a first connecting beam. The substrate outer frame is arranged on the supporting structure; the first end of the first piezoelectric ceramic is connected with the supporting structure; the first connecting beam is movably arranged on the substrate outer frame, and the first connecting beam is connected between the first piezoelectric ceramic and the sample. The movable end of the horizontal driver is connected to the two ends of the sample in the horizontal direction. According to the transmission electron microscope in-situ biaxial plane stress mechanics experiment platform provided by the invention, the vertical driver and the horizontal driver form a cross-shaped sample carrying area in the center, so that independent transmission of biaxial displacement is realized; movement of the vertical driver and the horizontal driver is independent of each other, sample drifting is remarkably reduced, the drifting distance is controlled within an extremely low range, and continuity of high-resolution imaging is guaranteed.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of mechanical research equipment, in particular to a transmission electron microscope in-situ biaxial plane stress mechanical experiment platform. BACKGROUND

[0002] The mechanical properties of materials, such as impact resistance, fatigue performance, and plasticity, are key factors in determining the engineering application value of structural materials. Developing new high-performance materials requires a deep understanding of the deformation mechanism of materials at the nanometer, atomic, and even sub-angstrom scales. Transmission electron microscopy (English full name: Transmission Electron Microscope; English abbreviation: TEM) has become a core tool for microstructure characterization due to its high spatial resolution (up to 0.1 nm). However, traditional non-in situ research methods require samples at different deformation stages to be observed independently, which cannot avoid the following problems: observation area shift, inconsistent partitioning caused by multiple sampling, and inability to track the dynamic evolution process of the same micro area; deformation mechanism distortion, microstructure relaxation after material unloading may mask the true deformation mechanism, leading to biased mechanism inference. To overcome these limitations, researchers have developed TEM in-situ mechanical experiment platforms by integrating mechanical loading devices, with the main driving methods being: electrostatic drive, memory alloy drive, piezoelectric drive, fluid drive, electromagnetic drive, and thermal drive, to realize in-situ mechanical experiments on the same sample area and real-time observation.

[0003] Current mainstream TEM in-situ mechanical platforms generally use single-axis loading design: single-directional tension / compression is achieved through the cantilever beam structure of a micro-electro-mechanical system (English full name: Micro-Electro-Mechanical Systems; English abbreviation: MEMS) chip, or nanoindentation is performed using a first piezoelectric ceramic probe. Although such systems can provide sub-nanometer displacement resolution, they are limited by the narrow space and mechanical freedom of the TEM sample chamber, and cannot simultaneously apply controllable loads in orthogonal directions, resulting in the following key defects: 1. Unable to simulate real multi-axial stress environment: materials often experience biaxial plane stress in actual working conditions (such as thermal expansion mismatch of semiconductor devices and in-plane biaxial strain of two-dimensional materials), and single-axis loading can only induce deformation in a single direction, making it difficult to reflect the micro-mechanism under complex stress conditions; 2. Loading direction cannot be switched: the loading direction of existing MEMS chips is fixed by the pre-designed structure, and the force axis cannot be dynamically adjusted during the experiment. SUMMARY

[0004] The present application provides a transmission electron microscope in-situ biaxial plane stress mechanical experiment platform to solve the defect that the traditional single-axis loading system in the prior art cannot simulate the real multi-axial stress environment.

[0005] The application provides a transmission electron microscope in-situ biaxial plane stress mechanical experiment platform, comprising: a support structure; a vertical driver comprising: a substrate outer frame arranged on the support structure; a first piezoelectric ceramic, a first end of which is connected to the support structure; a first connecting beam movably arranged on the substrate outer frame, a first end of the first connecting beam being connected to a second end of the first piezoelectric ceramic, and a second end of the first connecting beam being connected to a first end of the sample in the vertical direction; a horizontal driver, a fixed end of the horizontal driver being connected to the substrate outer frame, and a movable end of the horizontal driver being connected to two ends of the sample in the horizontal direction.

[0006] According to the transmission electron microscope in-situ biaxial plane stress mechanical experiment platform provided by the application, the vertical driver further comprises: a second connecting beam, a first end of which is fixed to the substrate outer frame, and a second end of which is connected to a second end of the sample in the vertical direction.

[0007] According to the transmission electron microscope in-situ biaxial plane stress mechanical experiment platform provided by the application, the vertical driver further comprises: a first supporting beam arranged on both sides of the first connecting beam and connected between the first connecting beam and the substrate outer frame; a second supporting beam arranged on both sides of the second connecting beam and connected between the second connecting beam and the substrate outer frame.

[0008] According to the transmission electron microscope in-situ biaxial plane stress mechanical experiment platform provided by the application, the first connecting beam and the second connecting beam each have an L-shaped beam at one end close to the sample, the first connecting beam is connected to one end of the sample close to the second connecting beam through the L-shaped beam, and the second connecting beam is connected to one end of the sample close to the first connecting beam through the L-shaped beam.

[0009] According to the transmission electron microscope in-situ biaxial plane stress mechanical experiment platform provided by the application, the horizontal driver comprises: a driving base fixedly connected to the substrate outer frame; two driving rods respectively located at two ends of the sample in the horizontal direction, and each of the two driving rods being connected to an end of the sample in the horizontal direction; a plurality of thermal driving beams obliquely connected to both sides of the driving rods and connected to the driving base, the thermal driving beams being provided with electrical interfaces for being connected to a power supply and driving the driving rods to move horizontally based on the thermal expansion principle.

[0010] According to the in-situ biaxial plane stress mechanical experiment platform of the transmission electron microscope provided by the application, the multiple heat driving beams located on both sides of the driving rod form a V-shaped beam structure.

[0011] According to the in-situ biaxial plane stress mechanical experiment platform of the transmission electron microscope provided by the application, the driving rod is located on the top or bottom of the first connecting beam, and a first connecting block extending in the vertical direction is formed on the end of the driving rod close to the sample, and the driving rod is connected with the sample through the first connecting block.

[0012] According to the in-situ biaxial plane stress mechanical experiment platform of the transmission electron microscope provided by the application, the horizontal driver comprises: A second piezoelectric ceramic is arranged on the substrate outer frame. A third connecting beam is connected with the second piezoelectric ceramic at the first end and connected with the first end of the sample in the horizontal direction at the second end. A fourth connecting beam is fixed on the substrate outer frame at the first end and connected with the second end of the sample in the horizontal direction at the second end.

[0013] According to the in-situ biaxial plane stress mechanical experiment platform of the transmission electron microscope provided by the application, the third connecting beam and the fourth connecting beam are located on the top or bottom of the first connecting beam, and a second connecting block extending in the vertical direction is formed on the end of the third connecting beam and the fourth connecting beam close to the sample, and the third connecting beam and the fourth connecting beam are connected with the sample through the second connecting block respectively.

[0014] According to the in-situ biaxial plane stress mechanical experiment platform of the transmission electron microscope provided by the application, the horizontal driver further comprises: A third supporting beam is arranged on both sides of the third connecting beam and connected between the third connecting beam and the substrate outer frame.

[0015] This invention provides an in-situ biaxial planar stress mechanics experimental platform for transmission electron microscopy, comprising: a support structure, a vertical actuator, and a horizontal actuator. The vertical actuator includes: a substrate frame, a first piezoelectric ceramic, and a first connecting beam. The substrate frame is disposed on the support structure; a first end of the first piezoelectric ceramic is connected to the support structure; the first connecting beam is movably disposed on the substrate frame, and a first end of the first connecting beam is connected to a second end of the first piezoelectric ceramic, the second end of the first connecting beam being connected to a first end of the sample in the vertical direction. The fixed end of the horizontal actuator is connected to the substrate frame, and the movable end of the horizontal actuator is connected to both ends of the sample in the horizontal direction. This in-situ biaxial planar stress mechanics experimental platform for transmission electron microscopy provides a cross-shaped sample mounting area formed centrally by the vertical and horizontal actuators. The sample is connected to both the vertical and horizontal actuators, achieving independent transmission of biaxial displacement. Furthermore, the movements of the vertical and horizontal actuators are independent of each other. Through the physical isolation design of the mechanical path, sample drift is significantly reduced, and the drift amount is controlled within an extremely low range, ensuring the continuity of high-resolution imaging. Attached Figure Description

[0016] To more clearly illustrate the technical solutions in this invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of this invention. For those skilled in the art, other drawings can be obtained from these drawings without creative effort.

[0017] Figure 1 This is a schematic diagram of the structure of the in-situ biaxial plane stress mechanics experimental platform for transmission electron microscopy provided in one embodiment of the present invention.

[0018] Figure 2 This is a schematic diagram of the structure of the vertical driver and the horizontal driver provided in one embodiment of the present invention.

[0019] Figure 3 This is a partial structural schematic diagram of the "L"-shaped beam and the first connecting block provided in one embodiment of the present invention.

[0020] Figure 4 This is a schematic diagram of the structure of the vertical driver and the horizontal driver provided in one embodiment of the present invention.

[0021] Figure label: 100: support structure; 200: vertical driver; 201: substrate outer frame; 202: first piezoelectric ceramic; 203: first connecting beam; 204: second connecting beam; 205: first support beam; 206: second support beam; 207: "L" type beam; 300: horizontal driver; 301: driving base; 302: driving rod; 303: thermal driving beam; 304: first connecting block; 311: second piezoelectric ceramic; 312: third connecting beam; 313: fourth connecting beam; 314: second connecting block; 315: third support beam; 400: sample. DETAILED DESCRIPTION

[0022] In order to make the objects, technical solutions and advantages of the present application clearer, the technical solutions in the present application will be described clearly and completely below with reference to the drawings in the present application. Obviously, the described embodiments are some but not all of the embodiments of the present application. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative work fall within the protection scope of the present application.

[0023] In the description of the present embodiment, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, and are only for the purpose of facilitating the description of the present embodiment and simplifying the description, and therefore cannot be understood as indicating or implying that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as limiting the present embodiment.

[0024] In addition, the terms "first", "second" are only for the purpose of description, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the technical features referred to. Therefore, the features defined with "first", "second" can explicitly or implicitly include at least one of the features. In the description of the present embodiment, the meaning of "plurality" is at least two, for example, two, three, etc., unless otherwise explicitly and specifically limited.

[0025] In this embodiment, unless otherwise explicitly specified and limited, the terms "set", "install", "connect", "connect", "fix" and other terms should be understood broadly, for example, it can be fixedly connected, or it can be detachably connected, or it can be integrated; it can be mechanically connected, or it can be electrically connected; it can be directly connected, or it can be indirectly connected through an intermediate medium, it can be the internal communication of two elements or the interaction relationship of two elements, unless otherwise explicitly limited. For those skilled in the art, the specific meaning of the above terms in this embodiment can be understood according to the specific circumstances.

[0026] In the embodiments of the present application, unless otherwise explicitly specified and limited, the first feature is "on" or "under" the second feature. The first and second features can be in direct contact, or the first and second features can be in indirect contact through an intermediate medium. Moreover, the first feature "above", "above" and "above" the second feature can be directly above or obliquely above the second feature, or it can only mean that the horizontal height of the first feature is higher than that of the second feature. The first feature "below", "below" and "below" the second feature can be directly below or obliquely below the second feature, or it can only mean that the horizontal height of the first feature is less than that of the second feature.

[0027] Through the analysis of the prior art, the existing in-situ mechanical experiment platform of the transmission electron microscope has the following technical problems to be solved: 1. Multi-axial stress simulation capability is missing: traditional single-axis loading design (such as MEMS cantilever beam or piezoelectric probe) cannot simultaneously apply controllable loads in orthogonal directions, resulting in the inability to observe the micro-deformation behavior of materials (such as crack propagation path selection, dislocation slip system activation) under biaxial plane stress state, which severely restricts the mechanical analysis of the true service performance of materials (such as impact resistance, fatigue life).

[0028] 2. Loading direction is rigidly fixed: existing systems rely on pre-made structures to fix the loading direction, and the force acting axis cannot be dynamically adjusted during the experiment, making it difficult to adapt to the research needs of multi-directional stress paths under complex working conditions.

[0029] The following bottlenecks exist in biaxial loading: 1. Space conflict: the internal space of the TEM sample rod is insufficient, and the existing mechanical design cannot accommodate independently driven mechanisms arranged orthogonally (such as horizontal and vertical drivers); 2. Load crosstalk: the multi-directional force transmission path lacks a physical decoupling mechanism, resulting in misalignment of the error positioning of each axial stress measurement; 3. Biaxial loading causes sample drift, which destroys the stability of the electron beam focus and makes atomic-scale dynamic observation ineffective.

[0030] The above defects jointly cause that the traditional platform cannot meet the research demand of the micro mechanism of advanced structural materials (such as high-entropy alloy, nanolayer composite material) under the synergistic action of multi-axial stress. Therefore, developing an in-situ mechanical experiment platform capable of synchronously applying independently controllable biaxial plane stress and compatible with the space limitation of a TEM cavity has become an urgent need for upgrading the technology in the field.

[0031] The application will be described below in combination with Figures 1-4 A transmission electron microscope in-situ biaxial plane stress mechanical experiment platform is described. The transmission electron microscope in-situ biaxial plane stress mechanical experiment platform comprises a support structure 100, a vertical drive 200 and a horizontal drive 300.

[0032] The vertical drive 200 comprises a substrate outer frame 201, a first piezoelectric ceramic 202 and a first connecting beam 203. The substrate outer frame 201 is arranged on the support structure 100; the first end of the first piezoelectric ceramic 202 is connected with the support structure 100; the first connecting beam 203 is movably arranged on the substrate outer frame 201, and the first end of the first connecting beam 203 is connected with the second end of the first piezoelectric ceramic 202, and the second end of the first connecting beam 203 is connected with the first end in the vertical direction of the sample 400. The fixed end of the horizontal drive 300 is connected with the substrate outer frame 201, and the movable end of the horizontal drive 300 is connected with the two ends in the horizontal direction of the sample 400.

[0033] Specifically, the vertical drive 200 and the horizontal drive 300 form a cross-shaped sample 400 loading area in the center, which is used to load the sample 400 and apply a vertical force to the sample 400 through the vertical drive 200 and a horizontal force to the sample 400 through the horizontal drive 300, thereby realizing a biaxial plane stress experiment.

[0034] The overall structure of the experiment platform adopts a compact cross layout, comprising a support structure 100, a vertical drive 200, a horizontal drive 300 and a biaxial cross-shaped sample 400 loading area. The overall thickness is controlled to be sub-millimeter level to adapt to the narrow space of the transmission electron microscope sample 400 cavity. In the static relationship, the support structure 100 serves as the main bearing frame, and the vertical drive 200 and the horizontal drive 300 are embedded therein through symmetric design, realizing physical isolation of the mechanical path and reducing mechanical interference.

[0035] The support structure 100 adopts a modular design and is divided into a base bottom plate and a sensor carrier; the base bottom plate is connected to the experimental platform main body (i.e., the vertical drive 200 and the horizontal drive 300) through a stop port cooperation and screw fastening, serving as a main bearing component. The sensor carrier is fixed to the front end of the sample 400 head through two support shafts, so that it is independent of the driving component when tilting to avoid collision; the tail of the sensor carrier is provided with a through hole to be compatible with the double-axis tilting operation. The surface of the sensor carrier is provided with a groove for embedding the experimental platform main body, ensuring stable connection with the subsequent drive.

[0036] The substrate outer frame 201 serves as the mounting frame of the vertical drive 200, and the first piezoelectric ceramic 202 serves as the power source of the first connecting beam 203, which transmits the deformation amount of the first piezoelectric ceramic 202 to the sample 400 through the first connecting beam 203, thereby realizing the stress of the sample 400 in the vertical direction.

[0037] Specifically, the substrate outer frame 201 serves as a structural basis and provides rigidity and stability, and piezoelectric ceramic elements are integrated thereon and fixed by bonding or embedding; by using the inverse piezoelectric effect of piezoelectric ceramics, when an external circuit applies a voltage, the piezoelectric ceramics will produce expansion and contraction deformation, which is amplified through the first connecting beam 203 and pushes the sample 400 to move upward or downward, thereby transmitting the vertical movement of the sample 400 to the sample 400. The displacement precision of the above structure reaches the nanometer level, and the drift is controlled in an extremely low range (less than 0.1 nm / s), which guarantees the continuity of high-resolution imaging.

[0038] The fixed end of the horizontal drive 300 is fixedly connected with the substrate outer frame 201, and it has a horizontal movement function, thereby driving the sample 400 at both ends to move horizontally. The specific structure of the horizontal drive 300 is introduced through two specific embodiments.

[0039] In addition, in terms of control logic, the platform supports double-axis independent programming, and users can adjust the voltage parameters in real time through an external circuit to simulate complex stress paths, such as double-axis stretching.

[0040] The application provides a transmission electron microscope in-situ biaxial plane stress mechanical experiment platform, which comprises a support structure 100, a vertical driver 200 and a horizontal driver 300. The vertical driver 200 comprises a substrate outer frame 201, a first piezoelectric ceramic 202 and a first connecting beam 203. The substrate outer frame 201 is arranged on the support structure 100; the first end of the first piezoelectric ceramic 202 is connected with the support structure 100; the first connecting beam 203 is movably arranged on the substrate outer frame 201, and the first end of the first connecting beam 203 is connected with the second end of the first piezoelectric ceramic 202, and the second end of the first connecting beam 203 is connected with the vertical direction first end of a sample 400. The fixed end of the horizontal driver 300 is connected with the substrate outer frame 201, and the movable end of the horizontal driver 300 is connected with the horizontal direction two ends of the sample 400. The transmission electron microscope in-situ biaxial plane stress mechanical experiment platform provided by the application forms a cross sample 400 loading area in the center through the vertical driver 200 and the horizontal driver 300, the sample 400 is connected with the vertical driver 200 and the horizontal driver 300 respectively, independent transmission of biaxial displacement is realized, in addition, the movement of the vertical driver 200 and the horizontal driver 300 is independent of each other, through the physical isolation design of the mechanical path, the sample 400 drift is significantly reduced, the drift amount is controlled in an extremely low range, and the continuity of high-resolution imaging is ensured.

[0041] In one embodiment of the application, the vertical driver 200 further comprises a second connecting beam 204, the first end of which is fixed on the substrate outer frame 201, and the second end of which is connected with the vertical direction second end of the sample 400. Specifically, the second connecting beam 204 is fixed on the substrate outer frame 201 and connected with the vertical direction second end of the sample 400, so as to fix the second end of the sample 400. Figures 2 to 4 In the structure shown, the lower end of the sample 400 is constrained by the second connecting beam 204, and the vertical force is applied to the upper end of the sample 400 through the first connecting beam 203 under the action of the first piezoelectric ceramic 202, so that the vertical force of the sample 400 can be loaded only by energizing the first piezoelectric ceramic 202.

[0042] In one of the embodiments of the present application, the vertical driver 200 further comprises a first support beam 205 and a second support beam 206. The first support beam 205 is arranged on both sides of the first connecting beam 203 and connected between the first connecting beam 203 and the substrate frame 201; the second support beam 206 is arranged on both sides of the second connecting beam 204 and connected between the second connecting beam 204 and the substrate frame 201. Specifically, the first support beam 205 and the second support beam 206 are symmetrically arranged on the left and right sides of the first connecting beam 203 and the second connecting beam 204, respectively. The horizontal displacement of the first connecting beam 203 and the second connecting beam 204 is avoided by the horizontal constraint of the first support beam 205 on the first connecting beam 203 and the horizontal constraint of the second support beam 206 on the second connecting beam 204, so as to ensure the accuracy of the connection and support of the first connecting beam 203 and the second connecting beam 204 to the sample 400. It can be understood that the first support beam 205 can be made of a material with certain deformation function to meet the need of the vertical movement of the first connecting beam 203, and the lengths of the first support beam 205 and the second support beam 206 on the left and right sides are equal to ensure the equal horizontal constraints of the first connecting beam 203 and the second connecting beam 204.

[0043] In one of the embodiments of the present application, the first connecting beam 203 and the second connecting beam 204 have an "L" type beam 207 at one end close to the sample 400, and the first connecting beam 203 is connected to one end of the sample 400 close to the second connecting beam 204 through the "L" type beam 207, and the second connecting beam 204 is connected to one end of the sample 400 close to the first connecting beam 203 through the "L" type beam 207. In this embodiment, the "L" type beam 207 arranged on the first connecting beam 203 and the second connecting beam 204 can bypass the left and right sides of the sample 400 and be connected to the other end of the sample 400, so as to realize the change of the vertical driver 200 from applying pressure to applying tension to the sample 400, i.e. the downward displacement of the first connecting beam 203 provides tension to the sample 400, and the force is more accurate and less likely to deviate.

[0044] In one embodiment of the present invention, the horizontal actuator 300 includes: a driving base 301, two driving rods 302, and a plurality of thermally driven beams 303. The driving base 301 is fixedly connected to the substrate frame 201; the two driving rods 302 are located at opposite ends of the sample 400 in the horizontal direction and are connected to the ends of the sample 400 in the horizontal direction; the plurality of thermally driven beams 303 are obliquely connected to both sides of the driving rods 302 and connected to the driving base 301. Each thermally driven beam 303 has an electrical interface for connecting to a power source and drives the driving rods 302 to move horizontally based on the principle of thermal expansion. Specifically, the driving base 301 of the horizontal actuator 300 is fixed to the substrate frame 201 of the vertical actuator 200. The driving base 301 serves as the support structure 100 for the thermally driven beams 303. When the thermally driven beams 303 are energized, their length increases based on the principle of thermal expansion, thereby driving the driving rods 302 to move horizontally. Multiple thermally driven beams 303 are connected to both sides of the drive rod 302 to ensure accurate horizontal movement of the drive rod 302 and prevent vertical deviation.

[0045] In one embodiment of the invention, a plurality of thermally driven beams 303 located on both sides of the drive rod 302 form a "V"-shaped beam structure. Figure 2 In the structure shown, multiple thermally driven beams 303 on both sides of the drive rod 302 form a "V"-shaped beam structure. When the "V"-shaped beam structure expands due to heat, it drives the left drive rod 302 of the sample 400 to move to the left and the right drive rod 302 of the sample 400 to move to the right, thus applying a horizontal tensile force to the sample 400. It is understood that the aforementioned thermally driven beams 303 can be made of thermally expandable materials with a constant coefficient of thermal expansion, and an electrical source can be provided to allow the thermally driven beams 303 to elongate.

[0046] In one embodiment of the invention, the drive rod 302 is located at the top or bottom of the first connecting beam 203, and a first connecting block 304 extending vertically is formed at one end of the drive rod 302 near the sample 400. The drive rod 302 is connected to the sample 400 through the first connecting block 304. Figure 2 In the structure shown, the drive rod 302 is located below the first connecting beam 203, and its end near the sample 400 has an upwardly extending first connecting block 304. The first connecting block 304 can bypass the "L"-shaped beam 207 from below to connect with the sample 400, thereby avoiding interference between the vertical drive 200 and the horizontal drive 300, ensuring that the vertical drive and the horizontal drive move independently of each other, and saving the arrangement space of the two drives.

[0047] In one embodiment of the present invention, such as Figure 4As shown, the horizontal driver 300 comprises a second piezoelectric ceramic 311, a third connecting beam 312 and a fourth connecting beam 313. The second piezoelectric ceramic 311 is arranged on the substrate outer frame 201; the first end of the third connecting beam 312 is connected with the second piezoelectric ceramic 311, and the second end is connected with the horizontal direction first end of the sample 400; the first end of the fourth connecting beam 313 is fixed on the substrate outer frame 201, and the second end is connected with the horizontal direction second end of the sample 400. In the embodiment, the horizontal driver 300 adopts a driving mode similar to the vertical driver 200, i.e., the piezoelectric ceramic is used as a power source, the third connecting beam 312 is used to apply a horizontal driving force to the sample 400, and the fourth connecting beam 313 is used as a fixed end of the sample 400 and is connected with the substrate outer frame 201. It can be understood that, in the embodiment, the third connecting beam 312 and the fourth connecting beam 313 are horizontally arranged to provide a horizontal direction force; the first connecting beam 203 and the second connecting beam 204 are vertically arranged to provide a vertical direction force, so as to apply a biaxial plane stress to the sample 400.

[0048] In one of the embodiments of the present application, the third connecting beam 312 and the fourth connecting beam 313 are located at the top or the bottom of the first connecting beam 203, and the third connecting beam 312 and the fourth connecting beam 313 are formed with a second connecting block 314 extending in the vertical direction at the end close to the sample 400, and the third connecting beam 312 and the fourth connecting beam 313 are connected with the sample 400 through the second connecting block 314 respectively. In the embodiment, the third connecting beam 312 and the fourth connecting beam 313 are located at the top of the first connecting beam 203, and the end close to the sample 400 has a downward extending second connecting block 314, so as to connect with the sample 400 from below around the "L" type beam 207, avoid the interference between the vertical driver 200 and the horizontal driver 300, ensure the vertical driving and the horizontal driving to move independently of each other, and save the arrangement space of the two drivers.

[0049] In one of the embodiments of the present application, the horizontal driver 300 further comprises a third supporting beam 315. The third supporting beam 315 is arranged on both sides of the third connecting beam 312 and is connected between the third connecting beam 312 and the substrate outer frame 201. The third supporting beam 315 in the embodiment has a similar function to the first supporting beam 205 and the second supporting beam 206, and the difference is that the vertical constraint of the third connecting beam 312 by the third supporting beam 315 avoids the vertical deviation of the third connecting beam 312, and ensures the accuracy of the connection and support of the third connecting beam 312 to the sample 400.

[0050] It should be pointed out finally that the above embodiments are only used to illustrate the technical solutions of the present application, but not to limit the same; and although the present application has been described in detail with reference to the foregoing embodiments, it should be appreciated by those skilled in the art that the technical solutions recorded in the foregoing embodiments can be modified, or some technical features thereof can be replaced equivalently; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the spirit and scope of the technical solutions of the embodiments of the present application.

Claims

1. A transmission electron microscope in-situ biaxial plane stress mechanics experimental platform, characterized in that, include: Support structure (100); Vertical drive (200), including: The substrate outer frame (201) is disposed on the support structure (100); The first piezoelectric ceramic (202) has its first end connected to the support structure (100); The first connecting beam (203) is movably disposed on the outer frame (201) of the substrate, and the first end of the first connecting beam (203) is connected to the second end of the first piezoelectric ceramic (202), and the second end of the first connecting beam (203) is connected to the first end of the sample (400) in the vertical direction; A horizontal actuator (300) is provided, with its fixed end connected to the substrate frame (201) and its movable end connected to both ends of the sample (400) in the horizontal direction.

2. The in-situ biaxial plane stress mechanics experimental platform for transmission electron microscopy according to claim 1, characterized in that, The vertical actuator (200) also includes: The second connecting beam (204) has its first end fixed to the outer frame (201) of the substrate and its second end connected to the second end of the sample (400) in the vertical direction.

3. The in-situ biaxial plane stress mechanics experimental platform for transmission electron microscopy according to claim 2, characterized in that, The vertical actuator (200) also includes: The first support beam (205) is disposed on both sides of the first connecting beam (203) and is connected between the first connecting beam (203) and the substrate outer frame (201); The second support beam (206) is located on both sides of the second connecting beam (204) and is connected between the second connecting beam (204) and the substrate frame (201).

4. The in-situ biaxial plane stress mechanics experimental platform for transmission electron microscopy according to claim 2, characterized in that, The first connecting beam (203) and the second connecting beam (204) each have an "L"-shaped beam (207) at one end near the sample (400), and the first connecting beam (203) is connected to the end of the sample (400) near the second connecting beam (204) through the "L"-shaped beam (207), and the second connecting beam (204) is connected to the end of the sample (400) near the first connecting beam (203) through the "L"-shaped beam (207).

5. The in-situ biaxial plane stress mechanics experimental platform for transmission electron microscopy according to any one of claims 1 to 4, characterized in that, The horizontal driver (300) includes: The driving substrate (301) is fixedly connected to the outer frame of the substrate (201); Two drive rods (302) are located at the two ends of the sample (400) in the horizontal direction, and the two drive rods (302) are connected to the ends of the sample (400) in the horizontal direction respectively; Multiple thermal drive beams (303) are obliquely connected to both sides of the drive rod (302) and connected to the drive base (301). The thermal drive beams (303) are provided with electrical interfaces for connecting to a power source and drive the drive rod (302) to move horizontally based on the principle of thermal expansion.

6. The in-situ biaxial plane stress mechanics experimental platform for transmission electron microscopy according to claim 5, characterized in that, The multiple thermal drive beams (303) located on both sides of the drive rod (302) form a "V" shaped beam structure.

7. The in-situ biaxial plane stress mechanics experimental platform for transmission electron microscopy according to claim 5, characterized in that, The drive rod (302) is located at the top or bottom of the first connecting beam (203), and the drive rod (302) has a first connecting block (304) extending in a vertical direction at one end near the sample (400), and the drive rod (302) is connected to the sample (400) through the first connecting block (304).

8. The in-situ biaxial plane stress mechanics experimental platform for transmission electron microscopy according to any one of claims 1 to 4, characterized in that, The horizontal driver (300) includes: A second piezoelectric ceramic (311) is disposed on the outer frame (201) of the substrate; The third connecting beam (312) has its first end connected to the second piezoelectric ceramic (311) and its second end connected to the first end of the sample (400) in the horizontal direction; The fourth connecting beam (313) has its first end fixed to the outer frame (201) of the substrate and its second end connected to the second end of the sample (400) in the horizontal direction.

9. The in-situ biaxial plane stress mechanics experimental platform for transmission electron microscopy according to claim 8, characterized in that, The third connecting beam (312) and the fourth connecting beam (313) are located at the top or bottom of the first connecting beam (203), and the third connecting beam (312) and the fourth connecting beam (313) have a second connecting block (314) extending in a vertical direction at one end near the sample (400). The third connecting beam (312) and the fourth connecting beam (313) are respectively connected to the sample (400) through the second connecting block (314).

10. The in-situ biaxial plane stress mechanics experimental platform for transmission electron microscopy according to claim 8, characterized in that, The horizontal actuator (300) also includes: The third support beam (315) is located on both sides of the third connecting beam (312) and connects the third connecting beam (312) and the substrate frame (201).

Images