Anti-grid-breaking TBC photovoltaic cell, photovoltaic module and system
By employing an alternating double-grid structure and a grid breakage prevention design in TBC photovoltaic cells, the contradiction between reducing silver paste consumption and grid breakage risk in traditional TBC photovoltaic cells is resolved, thereby improving cell efficiency and reliability and reducing production costs.
Patent Information
- Application Number
- CN202511053544.9
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-07-29
- Publication Date
- 2025-11-04
AI Technical Summary
Existing TBC photovoltaic cells cannot simultaneously reduce silver paste consumption and reduce grid breakage risk in traditional designs, resulting in high carrier transport resistance, limited fill factor and short-circuit current, and the inability to collect current through other paths after grid breakage, which increases production costs.
The alternating arrangement of dual fine grid structures and the fine grid anti-breakage design perpendicular to the main grid PAD shortens the carrier transmission distance and increases the redundant current path. By using alternating N-region and P-region fine grid electrodes, a fine grid anti-breakage design is set to provide a redundant current path when the fine grid breaks, thereby reducing transmission resistance and improving battery reliability.
It improves the fill factor and conversion efficiency of photovoltaic cells, reduces silver paste consumption, enhances cell reliability and production yield, reduces production costs, and avoids current collection failure caused by grid breakage.
Smart Images
Figure CN120897569A_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The present application relates to the technical field of photovoltaic cell manufacturing, in particular to a breakage-proof TBC photovoltaic cell, photovoltaic module and system. BACKGROUND
[0002] TBC solar cell is a new mass production cell technology combining tunnel oxide passivation contact technology and back junction back contact technology. Main grid connection lines, main grid PAD points and fine grid lines are usually arranged on the back of the cell. The main grid lines extend along one side of the cell surface, and the fine grid lines are perpendicular to the main grid lines. The main grid lines and the fine grid lines are in contact with the doped polysilicon layer, and are used to collect photo-generated carriers. As an existing high-efficiency technology, the conversion efficiency of the TBC solar cell is closer to the limit efficiency of the single-crystal silicon cell. The conversion efficiency and silver paste consumption are the core competitiveness of photovoltaic manufacturers. The traditional TBC cell adopts a design in which the N region and the P region are alternately arranged with a single fine grid, and the fine grid has a large width. However, the carriers need to be transported horizontally over a long distance to be collected by the electrode, resulting in high transmission resistance, which affects the fill factor and short-circuit current. Although the wide fine grid reduces the risk of grid breakage, it increases the silver paste consumption, which is not conducive to efficient carrier collection. Moreover, the existing design lacks redundant structures, and after the single fine grid breaks, the current cannot be collected through other paths. Silver paste is one of the main costs of TBC cells. The traditional scheme needs to compromise between increasing the silver paste consumption and reducing the risk of grid breakage, and it is difficult to achieve low cost and high efficiency at the same time.
[0003] Based on this, the present application provides a breakage-proof TBC photovoltaic cell, photovoltaic module and system, which can eliminate the drawbacks of the prior art. SUMMARY
[0004] The present application aims to provide a breakage-proof TBC photovoltaic cell, photovoltaic module and system to solve the problem of not being able to simultaneously increase silver paste consumption and reduce the risk of grid breakage in the background art.
[0005] To achieve the above-mentioned purpose, the present application provides the following technical scheme:
[0006] A breakage-proof TBC photovoltaic cell, comprising:
[0007] a silicon substrate;
[0008] a first passivation layer and an anti-reflection layer are sequentially laminated on the front surface of the silicon substrate;
[0009] a tunnel layer, a doped layer, a second passivation layer and a metal electrode are sequentially laminated on the back surface of the silicon substrate;
[0010] The metal electrode on the back surface comprises main grid PAD, fine grid electrode and fine grid anti-break grid, the main grid PAD comprises N-zone main grid PAD and P-zone main grid PAD which are isolated from each other, the fine grid electrode comprises N-zone fine grid electrode and P-zone fine grid electrode, the N-zone fine grid electrode is perpendicular to the N-zone main grid PAD, the P-zone fine grid electrode is perpendicular to the P-zone main grid PAD, the fine grid anti-break grid comprises P-zone fine grid anti-break grid and N-zone fine grid anti-break grid, which are used to provide redundant current path when the fine grid electrode is broken, the P-zone fine grid anti-break grid is perpendicular to the P-zone fine grid electrode, the N-zone fine grid anti-break grid is perpendicular to the N-zone fine grid electrode, and the fine grid anti-break grid is parallel to the main grid PAD.
[0011] Preferably, the total number of N-zone fine grid electrodes is 240-600, the width of any N-zone fine grid electrode is 4-20 μm, the total number of P-zone fine grid electrodes is 240-600, and the width of any P-zone fine grid electrode is 4-20 μm.
[0012] Preferably, the N-zone fine grid electrode is composed of several groups of adjacent first N-zone fine grid electrode and second N-zone fine grid electrode, the distance between adjacent first N-zone fine grid electrode and second N-zone fine grid electrode is 60-400 μm, the P-zone fine grid electrode is composed of several groups of adjacent first P-zone fine grid electrode and second P-zone fine grid electrode, and the distance between adjacent first P-zone fine grid electrode and second P-zone fine grid electrode is 60-400 μm.
[0013] Preferably, one group of N-zone fine grid electrode and one group of P-zone fine grid electrode are arranged alternately.
[0014] Preferably, the P-zone fine grid anti-break grid is arranged between two adjacent P-zone main grid PAD, the P-zone fine grid anti-break grid comprises first P-zone fine grid anti-break grid, second P-zone fine grid anti-break grid and third P-zone fine grid anti-break grid, the transverse width of any column of P-zone fine grid anti-break grid is 4-20 μm, and the longitudinal length of any column of P-zone fine grid anti-break grid is 60-400 μm.
[0015] Preferably, the N-zone fine grid anti-break grid is arranged between two adjacent N-zone main grid PAD, the N-zone fine grid anti-break grid comprises first N-zone fine grid anti-break grid, second N-zone fine grid anti-break grid and third N-zone fine grid anti-break grid, the transverse width of any column of N-zone fine grid anti-break grid is 4-20 μm, and the longitudinal length of any column of N-zone fine grid anti-break grid is 60-400 μm.
[0016] Preferably, the total number of fine grids of the photovoltaic cell is 480-1200, the number of cell pieces of the photovoltaic cell is set as n, 1≤n≤4, n is an integer, when the number of pieces is n, the number of fine grids of a single piece is strip.
[0017] Preferably, the battery piece is one of 0BB main grid structure and MBB main grid structure.
[0018] A photovoltaic module comprising the above anti-breaking grid TBC photovoltaic cell.
[0019] A photovoltaic system comprising the above photovoltaic module.
[0020] Compared with the prior art, the present application has the following beneficial effects:
[0021] The present application changes the back surface pattern design of the TBC cell, shortens the transmission distance of the carriers from the doped layer to the fine grid electrode through the alternately arranged double fine grid structure, reduces the transmission resistance, and improves the carrier collection amount, thereby improving the fill factor, current and conversion efficiency of the cell. The present application also provides a fine grid anti-breaking grid structure parallel to the main grid PAD and perpendicular to the fine grid electrode, which divides the fine grid electrode between adjacent main grid PADs into several segments. When the fine grid electrode at a certain position is broken, other fine grid electrodes can still maintain current collection, thereby improving the reliability of the cell. The anti-breaking grid structure can effectively reduce the risk of broken grid without increasing the silver paste unit consumption. The fine grid electrode width is reduced to 40% of the conventional width, the current collection path is optimized, the fine grid electrode width reduction design reduces the silver paste unit consumption, and the anti-breaking grid structure ensures the printing yield and reduces the production cost. BRIEF DESCRIPTION OF DRAWINGS
[0022] Figure 1 It is a schematic diagram of the overall structure of Example 1.
[0023] Figure 2 It is a schematic diagram of the back surface metal main grid screen pattern of Example 1.
[0024] Figure 3 It is a schematic diagram of the back surface metal N area fine grid screen pattern of Example 1.
[0025] Figure 4 It is a schematic diagram of the back surface metal P area fine grid screen pattern of Example 1.
[0026] Figure 5 It is a schematic diagram of the overall structure of Comparative Example 1.
[0027] Figure 6 It is a schematic diagram of the back surface metal main grid screen pattern of Comparative Example 1.
[0028] Figure 7 It is a schematic diagram of the back surface metal N area fine grid screen pattern of Comparative Example 1.
[0029] Figure 8 It is a schematic diagram of the back surface metal P area fine grid screen pattern of Comparative Example 1.
[0030] Figure reference numerals: N-region main gate PAD110, P-region main gate PAD120, N-region fine gate electrode 130, first N-region fine gate electrode 131, second N-region fine gate electrode 132, P-region fine gate electrode 140, first P-region fine gate electrode 141, second P-region fine gate electrode 142, P-region fine gate anti-breakage gate 150, first P-region fine gate anti-breakage gate 151, second P-region fine gate anti-breakage gate 152, third P-region fine gate anti-breakage gate 153, N-region fine gate anti-breakage gate 160, first N-region fine gate anti-breakage gate 161, second N-region fine gate anti-breakage gate 162, third N-region fine gate anti-breakage gate 163. Detailed Implementation
[0031] To make the objectives, technical solutions, and advantages of this invention clearer, the invention will be further described in detail below with reference to the accompanying drawings and embodiments.
[0032] Example 1
[0033] In this embodiment, as Figures 1-4 As shown, a type of TBC photovoltaic cell with anti-grid breakage includes:
[0034] Silicon substrate;
[0035] The first passivation layer and the antireflection layer are sequentially stacked on the front side of the silicon substrate;
[0036] A tunneling layer, a doped layer, a second passivation layer, and a metal electrode are sequentially stacked on the back side of a silicon substrate.
[0037] The back metal electrode includes a main gate PAD, fine gate electrodes, and a fine gate anti-breakage grid. The main gate PAD includes an N-region main gate PAD110 and a P-region main gate PAD120 that are isolated from each other. The fine gate electrodes include an N-region fine gate electrode 130 and a P-region fine gate electrode 140. The N-region fine gate electrode 130 is perpendicular to the N-region main gate PAD110, and the P-region fine gate electrode 140 is perpendicular to the P-region main gate PAD120. The fine gate anti-breakage grid includes a P-region fine gate anti-breakage grid 150 and an N-region fine gate anti-breakage grid 160, which are used to provide a redundant current path when the fine gate electrode breaks. The P-region fine gate anti-breakage grid 150 is perpendicular to the P-region fine gate electrode 140, and the N-region fine gate anti-breakage grid 160 is perpendicular to the N-region fine gate electrode 130. The fine gate anti-breakage grid is parallel to the main gate PAD.
[0038] Among them, such as Figure 1 , Figure 3 and Figure 4As shown, the total number of N-zone fine grid electrodes 130 is 240-600, and the number of N-zone fine grids in a conventional design is 120-300. The number of N-zone fine grid electrodes 130 in this embodiment is doubled compared to the conventional number. The width of any one N-zone fine grid electrode 130 is 4-20 μm, and is preferably 12 μm. The width of the N-zone fine grid in a conventional design is 10-50 μm. The width of the N-zone fine grid electrode 130 in this embodiment is 60% narrower than the conventional width. The total number of P-zone fine grid electrodes 140 is 240-600, and the number of P-zone fine grids in a conventional design is 120-300. The number of P-zone fine grid electrodes 130 in this embodiment is doubled compared to the conventional number. The width of any one P-zone fine grid electrode 140 is 4-20 μm, and is preferably 12 μm. The width of the P-zone fine grid in a conventional design is 10-50 μm. The width of the P-zone fine grid electrode 130 in this embodiment is 60% narrower than the conventional width.
[0039] As shown in Figure 1 , Figure 3 and Figure 4 , the N-zone fine grid electrodes 130 are composed of a plurality of groups of adjacent first N-zone fine grid electrodes 131 and second N-zone fine grid electrodes 132. The distance between adjacent first N-zone fine grid electrodes 131 and second N-zone fine grid electrodes 132 is 60-400 μm, and is preferably 200 μm. The fine grid spacing and the length of the break prevention grid are independently set, and the length of the break prevention grid is not directly related to the width of the fine grid electrode. The P-zone fine grid electrodes 140 are composed of a plurality of groups of adjacent first P-zone fine grid electrodes 141 and second P-zone fine grid electrodes 142. The distance between adjacent first P-zone fine grid electrodes 141 and second P-zone fine grid electrodes 142 is 60-400 μm, and is preferably 200 μm.
[0040] As shown in Figure 1 , a group of N-zone fine grid electrodes 130 and a group of P-zone fine grid electrodes 140 are arranged alternately. By changing the number and width of the fine grid electrodes and increasing the fine grid break prevention grid, the conventional arrangement of 1 N-zone fine grid electrode and 1 P-zone fine grid electrode is improved to an arrangement of 2 N-zone fine grid electrodes and 2 P-zone fine grid electrodes.
[0041] As shown in Figure 1 and Figure 4As shown, the P-zone fine grid anti-break grid 150 is arranged between two adjacent P-zone main grids PAD 120, the fine grid anti-break grid line increases the pattern structure, and the fine grid between the adjacent main grid PAD points is divided into several sections. Before and after the improvement of the pattern structure, by reducing the fine grid width from 24 μm to 12 μm, while increasing the anti-break grid structure, the overall printing wet weight is kept within ± 2% fluctuation range, the number of anti-break grid columns between two adjacent P-zone main grids PAD 120 can be 1, 2, 3, 4, 5, 6, 7, etc. Any column can be selected according to actual manufacturing needs, and 3 columns are selected in the embodiment. The P-zone fine grid anti-break grid 150 includes a first P-zone fine grid anti-break grid 151, a second P-zone fine grid anti-break grid 152, and a third P-zone fine grid anti-break grid 153. The horizontal width of any column of P-zone fine grid anti-break grid 150 is 4-20 μm, preferably 12 μm. The vertical length of any column of P-zone fine grid anti-break grid 150 is 60-400 μm, preferably 200 μm. The horizontal width is the width of the P-zone fine grid anti-break grid 150 parallel to the fine grid electrode direction, and the vertical length is the width of the P-zone fine grid anti-break grid 150 perpendicular to the fine grid electrode direction. The distance between any column of P-zone main grid PAD 120 and the adjacent column of P-zone fine grid anti-break grid 150 needs to be selected according to actual preparation needs, which can be equal or not equal. The distance between the P-zone fine grid anti-break grid 150 of the adjacent two columns of P-zone main grid PAD 120 needs to be selected according to actual preparation needs, such as the distance between the first P-zone fine grid anti-break grid 151 and the second P-zone fine grid anti-break grid 152, which can be equal or not equal.
[0042] wherein Figure 1 and Figure 3As shown, the N-zone fine-grid anti-breakage grid 160 is disposed between two adjacent N-zone main grids PAD 110. The number of anti-breakage grid columns between two adjacent N-zone main grids PAD 110 can be any number of columns, such as 1, 2, 3, 4, 5, 6, 7, etc., which can be selected according to actual manufacturing requirements. In this embodiment, 3 columns are selected. The N-zone fine-grid anti-breakage grid 160 includes a first N-zone fine-grid anti-breakage grid 161, a second N-zone fine-grid anti-breakage grid 162, and a third N-zone fine-grid anti-breakage grid 163. The lateral width of any column of N-zone fine-grid anti-breakage grid 160 is 4 to 20 μm, preferably 12 μm, and the longitudinal length of any column of N-zone fine-grid anti-breakage grid 160 is 60 to 400 mm. μm, preferably 200μm, the lateral width is the width of the N-region fine gate anti-breakage gate 160 parallel to the fine gate electrode direction, and the longitudinal length is the width of the N-region fine gate anti-breakage gate 160 perpendicular to the fine gate electrode direction. The spacing between any column of N-region main gate PAD110 and the adjacent column of N-region fine gate anti-breakage gate 160 needs to be selected according to the actual preparation requirements. They can be equal or unequal. The distance between the N-region fine gate anti-breakage gate 160 of two adjacent columns of N-region main gate PAD110 needs to be selected according to the actual preparation requirements. For example, the distance between the first N-region fine gate anti-breakage gate 161 and the second N-region fine gate anti-breakage gate 162 can be equal or unequal.
[0043] Among them, such as Figure 1 As shown, the total number of fine grids in a photovoltaic cell ranges from 480 to 1200. The number of photovoltaic cell panels is set as n, where 1 ≤ n ≤ 4, and n is an integer. When the number of panels is n, the number of fine grids in a single panel is... The total number of fine gates includes only the fine gate electrodes of the N-region and P-region, excluding the number of gates to prevent breakage. After slab division, the alternating arrangement pattern of the fine gate electrodes 130 and the fine gate electrodes 140 of each group remains unchanged within each slab.
[0044] Among them, such as Figure 1 As shown, the solar cell is one of the OBB main grid structure and MBB main grid structure. The MBB main grid structure refers to the photovoltaic cell having multiple main grid lines (usually ≥3) on the back. The main grid PADs are interconnected through the main grid connection lines. The fine grid electrodes are arranged perpendicular to the main grid lines to reduce resistance and improve current collection efficiency. It is suitable for high-power modules and reduces current transmission loss. The OBB main grid structure is that there are no main grid connection lines between the main grid PADs on the back. Only the main grid PADs are retained. The fine grid electrodes are directly connected to the main grid PADs. The cost is reduced by reducing the amount of silver paste. The fine grid electrode screen can be set as a steel screen, PI screen or emulsion screen. The TBC photovoltaic cell can also be a non-OBB structure. When the TBC photovoltaic cell is set as a non-OBB structure, the N-area main grid PAD110 and the P-area main grid PAD120 are connected through the main grid connection lines. The solar cell in this embodiment can adopt the OBB or MBB structure to adapt to different production process requirements and has good application prospects.
[0045] The embodiment discloses a photovoltaic module comprising the anti-break grid TBC photovoltaic cell;
[0046] The embodiment discloses a photovoltaic system comprising the photovoltaic module;
[0047] Specifically, the application achieves the purpose of improving the fill factor, current and conversion efficiency of the cell by changing the number and width of the fine grid electrodes and increasing the pattern structure of the fine grid anti-break grid, effectively reduces the silver paste unit consumption, wherein the two N-zone fine grid electrodes and the two P-zone fine grid electrodes are arranged alternately, which can shorten the distance of the carriers from the doped layer to the fine grid electrode, greatly reduce the transmission resistance, and greatly improve the carrier collection amount, and the fine grid anti-break grid structure can improve the break grid tolerance, support the reduction of the fine grid width, reduce the fine grid silver paste unit consumption, balance the screen mechanical stress, and improve the screen life.
[0048] Comparative Example 1
[0049] Different from Example 1, wherein as shown in Figures 5-8 , the front and back structures of Comparative Example 1 and Example 1 are consistent, comprising a silicon substrate, the front surface of which is sequentially stacked with a first passivation layer and an anti-reflection layer, and the back surface of which is sequentially stacked with a tunneling layer, a doped layer, a second passivation layer and a metal electrode, the above-mentioned silicon substrate, first passivation layer, anti-reflection layer, tunneling layer, doped layer and second passivation layer are consistent with the structures in Example 1, and the difference lies in the back fine grid electrode and the pattern structure, the width of the N-zone fine grid electrode and the P-zone fine grid electrode is 24 μm, as shown in Figure 7 and Figure 8 , one N-zone fine grid electrode and one P-zone fine grid electrode are arranged alternately, and the N-zone fine grid electrode and the P-zone fine grid electrode are not provided with a fine grid anti-break grid structure, as shown in Figure 6 , the back main grid PAD structure in Comparative Example 1 is consistent with that in Example 1;
[0050] Comparative Example 1 and Example 1 are compared and analyzed in terms of effect:
[0051] Example 1 adopts two N-zone fine grid electrodes and two P-zone fine grid electrodes arranged alternately, the number of fine grid electrodes is doubled, the width is reduced to 40% of the conventional width, the carrier transmission distance is shortened, the resistance is reduced, the fill factor and current collection efficiency are improved, the fine grid width is reduced to reduce the silver paste unit consumption, the overall printing wet weight fluctuation is controlled within ±2%, the fine grid anti-break grid structure parallel to the main grid PAD and perpendicular to the fine grid electrode is introduced, the fine grid electrode is segmented, a redundant current path is provided, current can still be collected when the grid is broken, the reliability is improved, and the risk of grid breakage is reduced, without increasing the silver paste unit consumption;
[0052] The comparative example 1 uses one N region fine grid electrode and one P region fine grid electrode to be arranged alternately, the number of fine grid electrodes is small, the width is large, the carrier transmission distance is long, the resistance is high, the silver paste consumption is large, the efficiency improvement is limited, there is no anti-break grid structure, the fine grid electrode is continuously extended, and single point breakage can cause the whole fine grid to fail, and the yield and reliability are low;
[0053] In summary, the double fine grid electrodes are arranged alternately and the fine grid anti-break grid structure is used, so that the resistance can be reduced and the risk of breakage can be reduced, the risk of breakage and the demand for high efficiency are solved at the same time without increasing the unit consumption of silver paste, which embodies the breakthrough of the technical scheme.
[0054] The above is only a specific embodiment of the present application, but the protection scope of the present application is not limited thereto, any person skilled in the art can easily think of changes or replacements within the technical range disclosed in the present application, which should be covered within the protection scope of the present application. Therefore, the protection scope of the present application should be subject to the protection scope of the claims.
Claims
1. A type of TBC photovoltaic cell with anti-grid breakage, characterized in that, include: Silicon substrate; The first passivation layer and the antireflection layer are sequentially stacked on the front side of the silicon substrate; A tunneling layer, a doped layer, a second passivation layer, and a metal electrode are sequentially stacked on the back side of the silicon substrate; The metal electrodes on the back side include a main gate PAD, fine gate electrodes, and a fine gate anti-breakage grid. The main gate PAD includes an N-region main gate PAD (110) and a P-region main gate PAD (120) that are isolated from each other. The fine gate electrodes include an N-region fine gate electrode (130) and a P-region fine gate electrode (140). The N-region fine gate electrode (130) is perpendicular to the N-region main gate PAD (110), and the P-region fine gate electrode (140) is perpendicular to the P-region main gate PAD (120). The main gate PAD (120) is perpendicular to the main gate. The fine gate anti-breakage gate includes a P-region fine gate anti-breakage gate (150) and an N-region fine gate anti-breakage gate (160) to provide a redundant current path when the fine gate electrode breaks. The P-region fine gate anti-breakage gate (150) is perpendicular to the P-region fine gate electrode (140), and the N-region fine gate anti-breakage gate (160) is perpendicular to the N-region fine gate electrode (130). The fine gate anti-breakage gate is parallel to the main gate PAD.
2. The anti-grid-breakage TBC photovoltaic cell according to claim 1, characterized in that, The total number of N-region fine gate electrodes (130) is 240 to 600, and the width of any one N-region fine gate electrode (130) is 4 to 20 μm. The total number of P-region fine gate electrodes (140) is 240 to 600, and the width of any one P-region fine gate electrode (140) is 4 to 20 μm.
3. The anti-grid-breakage TBC photovoltaic cell according to claim 2, characterized in that, The N-region fine gate electrode (130) is composed of several groups of adjacent first N-region fine gate electrodes (131) and second N-region fine gate electrodes (132), and the distance between adjacent first N-region fine gate electrodes (131) and second N-region fine gate electrodes (132) is 60 to 400 μm. The P-region fine gate electrode (140) is composed of several groups of adjacent first P-region fine gate electrodes (141) and second P-region fine gate electrodes (142), and the distance between adjacent first P-region fine gate electrodes (141) and second P-region fine gate electrodes (142) is 60 to 400 μm.
4. The anti-grid-breakage TBC photovoltaic cell according to claim 3, characterized in that, A set of N-region fine gate electrodes (130) and a set of P-region fine gate electrodes (140) are arranged alternately in sequence.
5. The anti-grid-breakage TBC photovoltaic cell according to claim 1, characterized in that, The P-area fine grid anti-breakage grid (150) is disposed between two adjacent P-area main grids PAD (120). The P-area fine grid anti-breakage grid (150) includes a first P-area fine grid anti-breakage grid (151), a second P-area fine grid anti-breakage grid (152) and a third P-area fine grid anti-breakage grid (153). The transverse width of any column of the P-area fine grid anti-breakage grid (150) is 4 to 20 μm, and the longitudinal length of any column of the P-area fine grid anti-breakage grid (150) is 60 to 400 μm.
6. The anti-grid-breakage TBC photovoltaic cell according to claim 1, characterized in that, The N-zone fine grid anti-breakage grid (160) is disposed between two adjacent N-zone main grid PADs (110). The N-zone fine grid anti-breakage grid (160) includes a first N-zone fine grid anti-breakage grid (161), a second N-zone fine grid anti-breakage grid (162), and a third N-zone fine grid anti-breakage grid (163). The lateral width of any column of the N-zone fine grid anti-breakage grid (160) is 4 to 20 μm, and the longitudinal length of any column of the N-zone fine grid anti-breakage grid (160) is 60 to 400 μm.
7. The anti-grid-breakage TBC photovoltaic cell according to any one of claims 1-6, characterized in that, The total number of fine grids in the photovoltaic cell is 480–1200. The number of cell segments in the photovoltaic cell is set as n, where 1 ≤ n ≤ 4, and n is an integer. When the number of segments is n, the number of fine grids in a single segment is: strip.
8. The anti-grid-breakage TBC photovoltaic cell according to claim 7, characterized in that, The solar cell is one of the OBB main busbar structure and the MBB main busbar structure.
9. A photovoltaic module, characterized in that, Including the anti-grid-break TBC photovoltaic cell as described in any one of claims 1-8.
10. A photovoltaic system, characterized in that, Includes the photovoltaic module as described in claim 9.