Method and device for vacuumizing single crystal furnace
By introducing inert gas into the furnace during the vacuuming process of the single crystal furnace and detecting the pressure, the problem of interference from impurities in the detection results was solved, realizing full automation of vacuuming of the single crystal furnace and improving detection accuracy, thus improving production efficiency.
Patent Information
- Application Number
- CN202511132532.5
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-08-13
- Publication Date
- 2025-11-07
AI Technical Summary
During the vacuuming process of a single crystal furnace, the test results are easily affected by the composition inside the furnace, leading to inaccurate test results, affecting production efficiency, and requiring manual intervention and adjustment, making full automation impossible.
During the vacuuming process of a single crystal furnace, inert gas is introduced into the furnace and the pressure is monitored. Impurities are squeezed out by the inert gas, ensuring the accuracy of the test results and achieving fully automated vacuuming.
It improves vacuuming efficiency, reduces human intervention, ensures the accuracy of test results, avoids misjudgments caused by impurities, and improves production efficiency.
Smart Images
Figure CN120905764A_ABST
Abstract
Description
TECHNICAL FIELD
[0001] Embodiments of the present application relate to the technical field of crystal pulling of single crystal furnace, and particularly relate to a single crystal furnace vacuum pumping method and device. BACKGROUND
[0002] In the process of pulling a crystal bar by a single crystal furnace, some steps have been automated, and some steps still need to be completed manually. At present, the step of pumping vacuum by a single crystal furnace has been initially automated, including S1, pumping vacuum; S2, detecting whether the pressure reaches the set value after stopping pumping vacuum. In this step, if the detection result is qualified, the subsequent feeding operation can be performed, but if the detection result is unqualified, the reason needs to be checked manually, and further testing is performed after adjustment, that is, the detection result is disturbed by the composition in the furnace, which may lead to inaccurate detection result and needs to be detected again after manual intervention. Moreover, in the case of unqualified detection result, the operator cannot receive it in time, which leads to that the single crystal furnace cannot pull the crystal and thus the working hours are delayed, and the production efficiency of the crystal bar is reduced.
[0003] It should be noted that the above content is not necessarily prior art, and is not used to limit the patent protection scope of the present application. SUMMARY
[0004] Embodiments of the present application provide a single crystal furnace vacuum pumping method and device to solve or alleviate one or more technical problems proposed above.
[0005] As a first aspect of the embodiments of the present application, the embodiments of the present application provide a single crystal furnace vacuum pumping method, comprising: pumping vacuum for a single crystal furnace for a first time length; filling inert gas into the single crystal furnace for a second time length, the first time length being greater than the second time length; after stopping pumping vacuum for the single crystal furnace and / or stopping filling inert gas into the single crystal furnace, detecting the pressure in the single crystal furnace at least once.
[0006] In one embodiment, pumping vacuum for the single crystal furnace for the first time length comprises: in the case of pumping vacuum for the single crystal furnace for a third time length, the pressure in the single crystal furnace reaches a preset first pressure value; the third time length is less than the difference between the first time length and the second time length; filling inert gas into the single crystal furnace for the second time length, and continuing to pump vacuum for the single crystal furnace to the first time length.
[0007] In one embodiment, the first pressure value is 70mTorr-200mTorr.
[0008] In one embodiment, pumping vacuum for the single crystal furnace for the first time length further comprises: In the case that the inert gas is stopped from being filled into the single crystal furnace, the single crystal furnace is vacuumed until the pressure in the single crystal furnace reaches a preset second pressure value; in the case that the pressure in the single crystal furnace reaches the preset second pressure value, the vacuuming of the single crystal furnace is stopped.
[0009] In an embodiment, after the vacuuming of the single crystal furnace is stopped and / or the inert gas is stopped from being filled into the single crystal furnace, the pressure in the single crystal furnace is detected at least once, comprising: After the vacuuming of the single crystal furnace is stopped and the inert gas is stopped from being filled into the single crystal furnace, the pressure in the single crystal furnace is detected to obtain a first leakage rate value of the single crystal furnace. In the case that the first leakage rate value is less than or equal to a first threshold value, it is determined that the vacuuming is completed.
[0010] In an embodiment, after the vacuuming of the single crystal furnace is stopped and / or the inert gas is stopped from being filled into the single crystal furnace, the pressure in the single crystal furnace is detected at least once, further comprising: In the case that the first leakage rate value is greater than the first threshold value and less than or equal to a second threshold value, a leakage rate test is performed to obtain a second leakage rate value, and in the case that the second leakage rate value is less than or equal to the first threshold value, it is determined that the vacuuming is completed.
[0011] In an embodiment, after the vacuuming of the single crystal furnace is stopped and / or the inert gas is stopped from being filled into the single crystal furnace, the pressure in the single crystal furnace is detected at least once, further comprising: In the case that the first leakage rate value is greater than the second threshold value and less than or equal to a third threshold value, the inert gas is filled into the single crystal furnace, and the single crystal furnace is vacuumed to the second pressure value; A leakage rate test is performed to obtain a third leakage rate value, and in the case that the third leakage rate value is less than or equal to the first threshold value, it is determined that the vacuuming is completed.
[0012] As a second aspect of the embodiments of the present application, the embodiments of the present application provide a single crystal furnace vacuuming device, comprising: A vacuuming unit for vacuuming the single crystal furnace for a first time length; A gas filling unit for filling the inert gas into the single crystal furnace for a second time length, the first time length being greater than the second time length; A detection unit for detecting the pressure in the single crystal furnace at least once after the vacuuming of the single crystal furnace is stopped and / or the inert gas is stopped from being filled into the single crystal furnace.
[0013] As a third aspect of the embodiments of the present application, the embodiments of the present application provide a computer device, comprising: At least one processor; and A memory in communication connection with the at least one processor; The memory stores instructions executable by the at least one processor, and the instructions are executed by the at least one processor to enable the at least one processor to perform the method as above.
[0014] As a fourth aspect of the embodiments of the present application, the embodiments of the present application provide a computer readable storage medium, and the computer readable storage medium stores computer instructions, and the computer instructions are executed by a processor to implement the method as above.
[0015] As a fifth aspect of the embodiments of the present application, the embodiments of the present application provide a computer program product, and the computer program product comprises a computer program, and the computer program is executed by a processor to implement the method as above.
[0016] The single crystal furnace vacuumizing method provided by the embodiments of the present application can improve the vacuumizing efficiency. BRIEF DESCRIPTION OF DRAWINGS The accompanying drawings, which are included to provide a further understanding of the application and are incorporated in and constitute a part of this specification, illustrate embodiments of the application and together with the description serve to explain exemplary embodiments of the application. The illustrated embodiments are illustrative only and not restrictive of the application. In all the drawings, like reference numerals refer to like parts throughout the several views.
[0017] Figure 1 FIG. 1 shows a flowchart of a single crystal furnace vacuumizing method according to an embodiment of the present application.
[0018] Figure 2 FIG. 2 shows a schematic structural block diagram of a single crystal furnace vacuumizing device according to an embodiment of the present application.
[0019] Figure 3 FIG. 3 shows a hardware architecture schematic diagram of a computer device according to an embodiment of the present application. DETAILED DESCRIPTION
[0020] In order to make the objectives, technical solutions and advantages of the present application clearer, the present application will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present application and should not be used to limit the present application. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative labor fall within the scope of the present application.
[0021] It should be noted that the terms "first", "second", etc. in the embodiments of the present application are only used for the purpose of description and should not be understood as indicating or implying relative importance or implicitly indicating the number of the technical features indicated. Therefore, the features defined as "first" and "second" can explicitly or implicitly include at least one of the features. In addition, the technical solutions of various embodiments can be combined with each other, but it must be based on the fact that a person skilled in the art can realize it, and when the combination of technical solutions appears contradictory or unachievable, it should be considered that the combination of technical solutions does not exist and is not within the protection scope required by the present application.
[0022] In the description of the present application, it should be understood that the reference numerals before the steps do not indicate the order of execution of the steps before and after, but are only used for the convenience of describing the present application and distinguishing each step, and therefore should not be understood as limiting the present application.
[0023] In order for those skilled in the art to understand the technical solutions provided by the embodiments of the present application, the related art is described as follows: The embodiments of the present application provide a single crystal furnace vacuum pumping method, which is used for the single crystal furnace after installation is completed before the crystal pulling operation is performed, so that the single crystal furnace is completed after vacuum pumping, and the pressure after vacuum pumping meets the requirements of the crystal pulling operation. Further, it can also ensure that no leakage occurs in the single crystal furnace, that is, the leakage rate of the single crystal furnace meets the requirements of the crystal pulling operation.
[0024] The single crystal furnace vacuum pumping method provided by the embodiments of the present application realizes a fully automatic vacuum pumping process compared with the prior art. If it is judged that the single crystal furnace does not meet the requirements during the vacuum pumping process, it indicates that the installation of the single crystal furnace is unqualified, or the furnace body of the single crystal furnace is unqualified, and the single crystal furnace needs to be reassembled.
[0025] The single crystal furnace vacuum pumping method provided by the embodiments of the present application will not appear in the case where the vacuum pumping result of the single crystal furnace is judged to be unqualified, and it may also be caused by the unqualified impurities in the single crystal furnace, which needs to be detected again after human intervention.
[0026] The single crystal furnace vacuum pumping method provided by the embodiments of the present application is used for controlling the operation control of the single crystal furnace during the vacuum pumping process. The code corresponding to the vacuum pumping method can be stored in the server, and then realized by executing the server.
[0027] Figure 1 The flowchart of the single crystal furnace vacuum pumping method according to an embodiment of the present application is shown. The scheme of the single crystal furnace vacuum pumping method provided by the embodiments of the present application is as shown in Figure 1 , and specifically as follows: S110, pumping the single crystal furnace for a first time length.
[0028] S120, filling the inert gas into the single crystal furnace for a second time length, the first time length is greater than the second time length.
[0029] S130, detecting the pressure in the single crystal furnace at least once after stopping the vacuumizing and / or stopping the filling of the inert gas into the single crystal furnace.
[0030] The pulling operation in the single crystal furnace needs to be carried out in a vacuum environment, and the vacuumizing process is to reach the pressure required for the pulling operation.
[0031] The first time length of vacuumizing the single crystal furnace can be the time length of vacuumizing the pressure in the single crystal furnace to the pressure required for the pulling operation.
[0032] It is clear to those skilled in the art that argon needs to be filled into the single crystal furnace in the pulling operation. In order to facilitate or ensure safety, the inert gas filled into the single crystal furnace in the vacuumizing process of the embodiment of the present application can be argon.
[0033] It can be clear that other types of inert gas can also be filled into the single crystal furnace, which is also within the protection scope of the embodiment of the present application.
[0034] In the embodiment of the present application, the process of filling the inert gas into the single crystal furnace can be carried out synchronously with the vacuumizing of the single crystal furnace, and the inert gas can squeeze out the impurities such as water vapor and silicon powder in the single crystal furnace to the vacuumizing pump, so that the impurities are taken away.
[0035] In one example, the inert gas can be filled into the single crystal furnace after a period of vacuumizing the single crystal furnace, so that the pressure in the single crystal furnace is less than the atmospheric pressure, facilitating the filling of the inert gas and the squeezing out of the impurities after the inert gas is filled into the single crystal furnace.
[0036] In the embodiment of the present application, the flow of the inert gas filled into the single crystal furnace can not be limited, which can be given according to the situation.
[0037] In the embodiment of the present application, the time of filling the inert gas into the single crystal furnace can be greater than a preset threshold value, which is related to the speed of vacuumizing, the flow rate of filling the inert gas, the volume of the single crystal furnace, and the like. The preset threshold value is adaptively adjusted based on these related factors. The second time length can be greater than the preset threshold value.
[0038] In one example, the single crystal furnace is vacuumed for a first time duration; during the vacuuming, inert gas is injected into the single crystal furnace after a period of vacuuming, and vacuuming is continued to the first time duration after the injection of the inert gas is stopped. At this time, the pressure in the single crystal furnace after vacuuming can reach a required pressure value, which can be a pressure value required for crystal pulling operation. It can be understood that the injection of the inert gas into the single crystal furnace is implemented during the vacuuming of the multiple single crystal furnaces.
[0039] In the case of vacuuming the single crystal furnace to the required pressure, the vacuum pump can be turned off to stop vacuuming, at this time the channel for injecting the inert gas is also closed, and the single crystal furnace is in a closed and sealed space. In this case, the pressure in the single crystal furnace is detected at least once to determine whether the single crystal furnace has a leakage condition, or to determine whether the leakage rate value of the single crystal furnace based on the detected pressure value meets the requirements.
[0040] In the case that the leakage condition in the single crystal furnace meets the requirements, i.e. the vacuuming is completed, the single crystal furnace can be used for crystal pulling operation.
[0041] The single crystal furnace vacuuming method provided by the embodiments of the present application is used to be implemented before the single crystal furnace performs crystal pulling, so as to guarantee the environmental conditions required for crystal pulling.
[0042] The single crystal furnace vacuuming method provided by the embodiments of the present application can make the inert gas extrude the impurity components out of the single crystal furnace by injecting the inert gas into the single crystal furnace during the vacuuming of the single crystal furnace. In the case that there are less impurity components in the single crystal furnace, the pressure value detected is more capable of representing the performance of the single crystal furnace, and the vacuuming effect of the single crystal furnace is more accurate based on the pressure value, with less error. In the case that the judgment is not qualified, it is not necessary to artificially judge and adjust and then test again. Therefore, the vacuuming efficiency can be improved based on the vacuuming method.
[0043] In one embodiment, step S110 comprises: In the case of vacuuming the single crystal furnace for a third time duration, the pressure in the single crystal furnace reaches a preset first pressure value; the third time duration is less than the difference between the first time duration and the second time duration; The inert gas is filled into the single crystal furnace for a second time duration, and vacuuming of the single crystal furnace is continued to the first time duration.
[0044] In the embodiments of the present application, the inert gas is injected into the single crystal furnace in the case that the pressure in the single crystal furnace reaches the preset first pressure value after a period of vacuuming of the single crystal furnace, i.e. the inert gas is injected into the single crystal furnace in the case that the pressure in the single crystal furnace is less than the atmospheric pressure.
[0045] In one embodiment, the first pressure value is 70 mTorr - 200 mTorr, for example, can be 70 mTorr, 900 mTorr, 100 mTorr, 130 mTorr, 170 mTorr or 200 mTorr.
[0046] In one embodiment, step S110 further comprises: In the case of stopping the inert gas from being filled into the single crystal furnace, the single crystal furnace is vacuumed until the pressure in the single crystal furnace reaches a preset second pressure value; in the case that the pressure in the single crystal furnace reaches the preset second pressure value, the vacuuming of the single crystal furnace is stopped.
[0047] The first time length can be a predicted or estimated time length for vacuuming the single crystal furnace until the pressure in the single crystal furnace reaches the second pressure value. The second pressure value can be a pressure environment required for the crystal pulling operation in the single crystal furnace. After the vacuuming is completed, the crystal pulling operation can be directly entered.
[0048] The second pressure value can be, for example, 20 mTorr, 30 mTorr or 50 mTorr. In the embodiment of the present application, the second pressure value can be the pressure value required for the crystal pulling in the single crystal furnace.
[0049] In some other examples, the second pressure value can also be greater than the pressure value required for the crystal pulling in the single crystal furnace, for example, the pressure value required for the crystal pulling in the single crystal furnace is 30 mTorr, and the second pressure value can be set to a value greater than 30 mTorr, for example, 50 mTorr. When the pressure in the single crystal furnace is 50 mTorr, it is determined that the leakage rate of the single crystal furnace meets the requirements, and then the crystal pulling operation can be performed in the single crystal furnace. During the crystal pulling operation, the pressure in the single crystal furnace can be vacuumed to the required pressure, and then the subsequent operation is continued.
[0050] In one example, the vacuuming and the inert gas filling can be stopped at the same time, or the inert gas filling can be stopped first, and then the vacuuming is stopped.
[0051] In one example, if the furnace body of the single crystal furnace leaks, it is difficult to reach the second pressure value in the single crystal furnace after a long time of vacuuming the single crystal furnace. Therefore, it can be determined that the single crystal furnace itself has a leakage and does not meet the requirements.
[0052] In one example, the first time length can be a time length sufficient for the single crystal furnace to be vacuumed to the second pressure value. During the time length, if the pressure in the furnace reaches the second pressure value in advance, the vacuuming can be stopped when the second pressure value is reached. If the pressure in the single crystal furnace does not reach the second pressure value after the first time length, it indicates that the single crystal furnace itself leaks and has a quality problem, and does not meet the requirements.
[0053] In an embodiment, the step S130 comprises: After stopping the vacuumizing and the inert gas filling into the single crystal furnace, the pressure in the single crystal furnace is detected to obtain a first leakage rate value of the single crystal furnace. In a case where the first leakage rate value is less than or equal to the first threshold value, it is determined that the vacuumizing is completed.
[0054] After the vacuumizing of the single crystal furnace is completed, the pressure value in the single crystal furnace can be obtained once. After the vacuumizing of the single crystal furnace is stopped, the pressure value in the single crystal furnace is obtained again. Based on the two pressure values and the time length between the two pressure values, the first leakage rate value can be calculated.
[0055] In a case where the first leakage rate value is less than or equal to the first threshold value, it indicates that the leakage rate of the single crystal furnace meets the requirements and can be used for the crystal pulling operation.
[0056] In an embodiment, the step S130 further comprises: In a case where the first leakage rate value is greater than the first threshold value and less than or equal to the second threshold value, the leakage rate test is performed to obtain a second leakage rate value. In a case where the second leakage rate value is less than or equal to the first threshold value, it is determined that the vacuumizing is completed.
[0057] In a case where the first leakage rate is greater than the first threshold value and less than or equal to the second threshold value, it can be indicated that the pressure is unstable due to the failure of the test process or the unstable data, etc. For example, the airflow is turbulent within the time after the vacuumizing is completed, etc. Thus, it can be caused that the single crystal furnace meets the requirements, but the first leakage rate value is greater than the first threshold value. In this case, the pressure value in the single crystal furnace can be further read to re-obtain the leakage rate value, i.e. to obtain the second leakage rate value. Until the second leakage rate value is less than or equal to the first threshold value, it is determined that the vacuumizing is completed. The process of obtaining the second leakage rate value can be multiple times, for example, after the first leakage rate value is obtained, the leakage rate test is performed twice or more times to determine whether the measured leakage rate is less than or equal to the first threshold value.
[0058] It is worth noting that in a case where the first leakage rate value is greater than the first threshold value, the multiple second leakage rate tests after that can be automatically implemented by the server issuing instructions, without the need for manual adjustment of the single crystal furnace. Therefore, the single crystal furnace will not be caused to be suspended.
[0059] In an embodiment, the step S130 further comprises: In a case where the first leakage rate value is greater than the second threshold value and less than or equal to the third threshold value, the inert gas is filled into the single crystal furnace, and the single crystal furnace is vacuumized to a second pressure value. The leakage rate test is performed to obtain a third leakage rate value. In a case where the third leakage rate value is less than or equal to the first threshold value, it is determined that the vacuumizing is completed.
[0060] In this way, the first leakage rate value is greater than the first threshold value, greater than the second threshold value, but less than or equal to the third threshold value. In this case, it is possible that there is still an impurity component in the single crystal furnace, so the step of further injecting inert gas into the single crystal furnace and vacuumizing the single crystal furnace to the second pressure value can be started to ensure that the test result is not affected by the impurity component in the single crystal furnace.
[0061] After the operation of further discharging the impurity component, the leakage rate test is continued. If the third leakage rate value obtained by the test is less than or equal to the first threshold value, it indicates that the leakage rate test of the single crystal furnace is qualified. If it still does not meet the requirement, it indicates that the quality of the single crystal furnace is not good and cannot be used for crystal pulling operation.
[0062] In the case where the first leakage rate value is greater than the third threshold value, it indicates that the single crystal furnace has a serious leakage and cannot be used for crystal pulling operation and needs to be repaired.
[0063] In the above implementation aspect, as an example, the first threshold value can be 100 mTorr / h, the second threshold value can be 120 mTorr / h, and the third threshold value can be 400 mTorr / h. The specific values can be adjusted according to the actual application conditions.
[0064] As shown in Figure 2 The embodiment of the present application also provides a single crystal furnace vacuumizing device 200, which comprises: A vacuumizing unit 201, configured to vacuumize the single crystal furnace for a first time length; A gas filling unit 202, configured to fill inert gas into the single crystal furnace for a second time length, the first time length being greater than the second time length; A detection unit 203, configured to detect the pressure in the single crystal furnace at least once after stopping vacuumizing the single crystal furnace and / or stopping filling inert gas into the single crystal furnace.
[0065] In an implementation manner, the vacuumizing unit 201 is configured to: In the case where the single crystal furnace is vacuumized for a third time length, the pressure in the single crystal furnace reaches a preset first pressure value; the third time length is less than the difference between the first time length and the second time length; Fill inert gas into the single crystal furnace for the second time length and continue to vacuumize the single crystal furnace for the first time length.
[0066] In an implementation manner, the first pressure value is 70 mTorr-200 mTorr.
[0067] In an implementation manner, the vacuumizing unit 201 is further configured to: In the case that the inert gas is stopped from being filled into the single crystal furnace, the single crystal furnace is vacuumed until the pressure in the single crystal furnace reaches a preset second pressure value; in the case that the pressure in the single crystal furnace reaches the preset second pressure value, the vacuuming of the single crystal furnace is stopped.
[0068] In an embodiment, the detection unit 203 is further configured to: After the vacuuming of the single crystal furnace and the stopping of the inert gas from being filled into the single crystal furnace, the pressure in the single crystal furnace is detected to obtain a first leakage rate value of the single crystal furnace; In the case that the first leakage rate value is less than or equal to the first threshold value, it is determined that the vacuuming is completed.
[0069] In an embodiment, the detection unit 203 is further configured to: In the case that the first leakage rate value is greater than the first threshold value and less than or equal to a second threshold value, a leakage rate test is performed to obtain a second leakage rate value, and in the case that the second leakage rate value is less than or equal to the first threshold value, it is determined that the vacuuming is completed.
[0070] In an embodiment, the detection unit 203 is further configured to: In the case that the first leakage rate value is greater than the second threshold value and less than or equal to a third threshold value, the inert gas is filled into the single crystal furnace, and the single crystal furnace is vacuumed to the second pressure value; A leakage rate test is performed to obtain a third leakage rate value, and in the case that the third leakage rate value is less than or equal to the first threshold value, it is determined that the vacuuming is completed.
[0071] Figure 3 A hardware architecture schematic diagram of a computer device 10000 suitable for implementing the single crystal furnace vacuuming method according to the embodiments of the present application is schematically shown. In some embodiments, the computer device 10000 can be a terminal device such as a smart phone, a wearable device, a tablet computer, a personal computer, a vehicle-mounted terminal, a game console, a virtual device, a workstation, a digital assistant, a set-top box, a robot, etc. In other embodiments, the computer device 10000 can be a rack-mounted server, a blade server, a tower server, or a cabinet server (including a standalone server, or a server cluster composed of multiple servers), etc. As shown in the figure, the computer device 10000 includes but is not limited to a memory 10010, a processor 10020, and a network interface 10030 which are communicatively connected through a system bus. Among them: Figure 3 The memory 10010 includes at least one type of computer-readable storage media, such as a flash memory, a hard disk, a multimedia card (e.g., SD or DX memory), a random access memory (RAM), a static random access memory (SRAM), a read-only memory (ROM), an electrically erasable programmable read-only memory (EEPROM), a programmable read-only memory (PROM), a magnetic memory, a magnetic disk, an optical disk, and the like. In some embodiments, the memory 10010 can be an internal memory module of the computer device 10000, such as a hard disk or a memory of the computer device 10000. In other embodiments, the memory 10010 can also be an external memory device of the computer device 10000, such as a plug-in hard disk, a smart media card (SMC), a secure digital (SD) card, a flash card, and the like. Of course, the memory 10010 can include both an internal memory module and an external memory device of the computer device 10000. In this embodiment, the memory 10010 is generally used to store an operating system and various application programs installed in the computer device 10000, such as program codes of a single crystal furnace vacuumizing method, and the like. In addition, the memory 10010 can also be used to temporarily store various data that have been output or will be output.
[0072] The processor 10020 can be a central processing unit (CPU), a controller, a microcontroller, a microprocessor, or other chips in some embodiments. The processor 10020 is generally used to control the overall operation of the computer device 10000, such as performing control and processing related to data interaction or communication of the computer device 10000, and the like. In this embodiment, the processor 10020 is used to run program codes or process data stored in the memory 10010.
[0073] The network interface 10030 can include a wireless network interface or a wired network interface, and is generally used to establish a communication link between the computer device 10000 and other computer devices. For example, the network interface 10030 is used to connect the computer device 10000 with an external terminal through a network, establish a data transmission channel and a communication link between the computer device 10000 and the external terminal, and the like. The network can be an Intranet, the Internet, a Global System of Mobile communication (GSM), a Wideband Code Division Multiple Access (WCDMA), a 4G network, a 5G network, Bluetooth, Wi-Fi, and the like wireless or wired network.
[0074] It should be noted that, Figure 3 Only the computer device with the components 10010-10030 is shown, but it should be understood that all the shown components are not required to be implemented, and more or fewer components can be alternatively implemented.
[0075] In this embodiment, the single crystal furnace vacuumizing method stored in the memory 10010 can also be divided into one or more program modules and executed by one or more processors (such as the processor 10020) to complete the single crystal furnace vacuumizing method of the embodiments.
[0076] The embodiments of the present application also provide a computer readable storage medium, and the computer readable storage medium has a computer program stored thereon, wherein the computer program is executed by a processor to implement the steps of the single crystal furnace vacuumizing method in the embodiments.
[0077] In this embodiment, the computer readable storage medium includes a flash memory, a hard disk, a multimedia card, a card-type memory (for example, an SD or DX memory, etc.), a random access memory (RAM), a static random access memory (SRAM), a read only memory (ROM), an electrically erasable programmable read only memory (EEPROM), a programmable read only memory (PROM), a magnetic memory, a magnetic disk, an optical disk, etc. In some embodiments, the computer readable storage medium can be an internal storage unit of the computer device, for example, a hard disk or a memory of the computer device. In other embodiments, the computer readable storage medium can also be an external storage device of the computer device, for example, a plug-in hard disk, a smart media card (SMC), a secure digital (SD) card, a flash card, etc. equipped on the computer device. Of course, the computer readable storage medium can also include both the internal storage unit and the external storage device of the computer device. In this embodiment, the computer readable storage medium is usually used to store an operating system and various application software installed on the computer device, for example, the program code of the single crystal furnace vacuumizing method in the embodiments, etc. In addition, the computer readable storage medium can also be used to temporarily store various data that have been output or will be output.
[0078] The embodiments of the present application also provide a computer program product, comprising a computer program which, when executed by a processor, implements the method in the above embodiments.
[0079] Obviously, those skilled in the art should understand that each module or each step of the above-mentioned embodiments of the present application can be implemented by a general-purpose computer device, which can be concentrated on a single computer device or distributed on a network composed of multiple computer devices, and optionally, each module or each step can be implemented by program code executable by a computer device, so that each module or each step can be stored in a storage device and executed by a computer device, and in some cases, the steps shown or described can be executed in an order different from that described herein, or each module or each step can be manufactured into an individual integrated circuit module, or multiple modules or steps can be manufactured into a single integrated circuit module. Therefore, the embodiments of the present application are not limited to any specific combination of hardware and software.
[0080] It should be noted that the above is only the preferred embodiment of the present application, and does not limit the patent protection scope of the present application, and any equivalent structure or equivalent process transformation using the content of the specification and drawings of the present application, or direct or indirect application in other related technical fields, are also included in the patent protection scope of the present application.
Claims
1. A method of evacuating a single crystal furnace, characterized by, The method comprises: vacuumizing the single crystal furnace for a first time length; filling inert gas into the single crystal furnace for a second time length, the first time length being greater than the second time length; after stopping vacuumizing the single crystal furnace and / or stopping filling inert gas into the single crystal furnace, detecting the pressure in the single crystal furnace at least once.
2. The method of claim 1, wherein, The vacuumizing the single crystal furnace for a first time length comprises: in the case of vacuumizing the single crystal furnace for a third time length, the pressure in the single crystal furnace reaches a preset first pressure value, the third time length being less than the difference between the first time length and the second time length; filling inert gas into the single crystal furnace for a second time length and continuing to vacuumize the single crystal furnace to the first time length.
3. The single crystal pulling apparatus vacuuming method as claimed in claim 2, wherein The first pressure value is 70 mTorr-200 mTorr.
4. The single crystal pulling apparatus vacuuming method according to claim 2 or 3, wherein The vacuumizing the single crystal furnace for a first time length further comprises: in the case of stopping filling inert gas into the single crystal furnace, vacuumizing the single crystal furnace until the pressure in the single crystal furnace reaches a preset second pressure value, and stopping vacuumizing the single crystal furnace in the case of the pressure in the single crystal furnace reaching the preset second pressure value.
5. The method of claim 4, wherein, The detecting the pressure in the single crystal furnace at least once after stopping vacuumizing the single crystal furnace and / or stopping filling inert gas into the single crystal furnace comprises: after stopping vacuumizing the single crystal furnace and stopping filling inert gas into the single crystal furnace, detecting the pressure in the single crystal furnace to obtain a first leakage rate value of the single crystal furnace; in the case of the first leakage rate value being less than or equal to a first threshold value, determining that the vacuumizing is completed.
6. The method of claim 5, wherein, The detecting the pressure in the single crystal furnace at least once after stopping vacuumizing the single crystal furnace and / or stopping filling inert gas into the single crystal furnace further comprises: in the case of the first leakage rate value being greater than the first threshold value and less than or equal to a second threshold value, performing a leakage rate test to obtain a second leakage rate value, and in the case of the second leakage rate value being less than or equal to the first threshold value, determining that the vacuumizing is completed.
7. The method of claim 6, wherein the pressure is reduced to a pressure of 1 x 10"6 Torr or less. The detecting the pressure in the single crystal furnace at least once after stopping vacuumizing the single crystal furnace and / or stopping filling inert gas into the single crystal furnace further comprises: in the case of the first leakage rate value being greater than the second threshold value and less than or equal to a third threshold value, filling inert gas into the single crystal furnace and vacuumizing the single crystal furnace to the second pressure value; performing a leakage rate test to obtain a third leakage rate value, and in the case of the third leakage rate value being less than or equal to the first threshold value, determining that the vacuumizing is completed.
8. A single crystal furnace vacuuming device characterized by comprising: The device comprises: a vacuumizing unit configured to vacuumize the single crystal furnace for a first time length; a gas filling unit configured to fill inert gas into the single crystal furnace for a second time length, the first time length being greater than the second time length; a detecting unit configured to detect the pressure in the single crystal furnace at least once after stopping vacuumizing the single crystal furnace and / or stopping filling inert gas into the single crystal furnace.
9. A computer device, characterized by The device comprises: at least one processor; and a memory connected to the at least one processor in communication; wherein: The memory stores instructions executable by the at least one processor, the instructions being executed by the at least one processor to enable the at least one processor to perform the single crystal furnace vacuumizing method of any one of claims 1 to 7.
10. A computer-readable storage medium, characterized in that, The computer readable storage medium stores computer instructions, the computer instructions being executed by the processor to implement the single crystal furnace vacuumizing method of any one of claims 1 to 7.
11. A computer program product comprising a computer program, characterized in that, The computer program, when executed by the processor, implements the steps of the single crystal furnace vacuumizing method of claims 1 to 7.