Spray plate, semiconductor processing equipment and method

Abstract

The invention provides a spraying plate, semiconductor processing equipment and a semiconductor processing method. The spraying plate comprises a gas uniformizing layer, an electromagnetic control layer and a panel layer. A gas channel is arranged in the gas uniformizing layer, and a sealing metal rod is arranged in the gas channel and used for sealing the gas channel in a closed state. The electromagnetic control layer is provided with electromagnetic blocks corresponding to the sealing metal bars and used for controlling the sealing metal bars to open the corresponding gas channels in the open state. The panel layer is arranged above the gas uniformizing layer, a plurality of spraying holes are formed in the panel layer, and the gas channel is connected with at least one spraying hole and used for spraying gas into a process chamber above the spraying plate. By controlling the on-off of the circuit of each electromagnetic block, the on-off of the corresponding gas channel above the electromagnetic block can be controlled, and each small area of the spraying plate is controlled to spray gas into the process chamber in a partitioned manner, so that the process requirements of the semiconductor processing process are met.

Description

Technical Field

[0001] This invention relates to the field of semiconductor device processing technology, and in particular to a spray plate, a semiconductor processing equipment, and a semiconductor processing method. Background Technology

[0002] In semiconductor manufacturing and thin film deposition, the spray plate is a core component for gas distribution within the process chamber, and its structural design directly affects the uniformity of gas and the precision of the deposition process. In existing technologies, the gases used in the deposition process are sprayed through the spray plate, which contains gas supply channels to regulate the gas supply to the entire wafer or a large area. However, the gas supply channels in existing spray plates can only achieve macroscopic on / off control at the wafer diameter scale, and cannot independently regulate the on / off state of small areas on the wafer surface. This makes it difficult to individually control the flow state of different gases in tiny areas of the wafer surface in actual processes, thus failing to meet the differentiated deposition requirements of local areas. This limits the realization of fine operations such as local defect repair and micro-area performance optimization in the deposition process, and is detrimental to improving the uniformity and process flexibility of the deposited thin film.

[0003] In order to overcome the above-mentioned defects in the existing technology, there is an urgent need in the field for an improved spray plate, which can control the spraying of gas into the process chamber by different small areas of the spray plate, so as to meet the process requirements of semiconductor processing. Summary of the Invention

[0004] The following provides a brief overview of one or more aspects to offer a basic understanding of them. This overview is not an exhaustive summary of all conceived aspects, nor is it intended to identify key or decisive elements of all aspects, nor to define the scope of any or all aspects. Its sole purpose is to present some concepts of one or more aspects in a simplified form as a prelude to the more detailed descriptions that follow.

[0005] To overcome the aforementioned deficiencies in the prior art, the present invention provides a spray plate, a semiconductor processing equipment, and a semiconductor processing method. By controlling the on / off state of the circuits of each electromagnetic block, the on / off state of the corresponding gas channel above it can be controlled to spray gas into the process chamber from each small area of ​​the spray plate in a zoned manner, thereby meeting the process requirements of semiconductor processing.

[0006] Specifically, the spray plate provided according to the first aspect of the present invention includes a gas equalization layer, an electromagnetic control layer, and a panel layer. The gas equalization layer has gas channels, and each gas channel has a sealing metal rod for closing the gas channel in a closed state. The electromagnetic control layer has electromagnetic blocks corresponding to each of the sealing metal rods for controlling the sealing metal rods to open the corresponding gas channels in an open state. The panel layer is disposed above the gas equalization layer and has a plurality of spray holes thereon. Each gas channel is connected to at least one of the spray holes for spraying gas into the process chamber above the spray plate.

[0007] Furthermore, in some embodiments of the present invention, the spray plate is provided with a spray zone consisting of at least one of the spray holes. Each spray zone corresponds to at least one of the gas channels. The spray zones are arranged in a grid pattern or in a concentric ring pattern. Alternatively, the spray zone is divided into a first spray zone at the center and a second spray zone at the edge.

[0008] Furthermore, in some embodiments of the present invention, the gas channel includes a first gas channel and a second gas channel. The first gas channel is used to transport a first gas. The second gas channel is used to transport a second gas. Therefore, the spray plate controls the opening and closing of the first gas channel and / or the second gas channel respectively to adjust the mixing ratio of the first gas and the second gas.

[0009] Furthermore, in some embodiments of the present invention, the first gas channel and the second gas passage are connected via an oblique branch. In the closed state, one side of the sealing metal rod closes the oblique branch of the first gas channel or the second gas channel, and the other side closes the inlet of the first gas channel or the second gas channel. In the open state, when the electromagnetic block is energized, it generates magnetism, controlling the two sides of the sealing metal rod to maintain a distance from the oblique branch and the inlet of the first gas channel or the second gas channel, thereby opening the first gas channel or the second gas channel.

[0010] Furthermore, in some embodiments of the present invention, the first gas is a process gas, and the second gas is an inert gas.

[0011] Furthermore, in some embodiments of the present invention, the spray plate further includes a rubber layer and a fixing layer. The rubber layer is disposed between the gas equalization layer and the electromagnetic control layer, and wraps around each of the sealing metal rods. The fixing layer is disposed between the gas equalization layer and the electromagnetic control layer, and is used to seal the junction between the vacuum chamber below the spray plate and the process chamber. Each of the gas channels passes through the fixing layer.

[0012] Furthermore, in some embodiments of the present invention, the electromagnetic control layer further includes a circuit board connected to an external power signal control unit, used to control the on / off state of the circuit boards corresponding to each electromagnetic block according to the control signal generated by the power signal control unit.

[0013] Furthermore, the semiconductor processing apparatus provided according to a second aspect of the present invention includes a process chamber, a spray plate as described in the first aspect of the present invention, and a vacuum chamber. The process chamber is used for performing semiconductor processing. The spray plate is used to spray gas into the process chamber for semiconductor processing. The vacuum chamber is connected to an external vacuum pump for placing the spray plate in a vacuum environment.

[0014] Furthermore, the semiconductor processing method provided by the third aspect of the present invention includes the following steps: controlling the spray plate of the semiconductor processing apparatus provided by the second aspect of the present invention to spray gas into the process chamber above; and performing a semiconductor processing process through the process chamber.

[0015] Furthermore, in some embodiments of the present invention, the semiconductor processing method further includes the following steps: generating control signals for the circuit boards corresponding to each electromagnetic block on the electromagnetic control layer of the spray plate according to the gas distribution in the process chamber; and controlling each electromagnetic block to be energized according to the control signals, thereby controlling each spray area of ​​the spray plate to open the corresponding gas channel to spray gas into the process chamber above the spray plate.

[0016] Furthermore, in some embodiments of the present invention, the gas channel includes a first gas channel and a second gas channel. The first gas channel is used to transport a first gas. The second gas channel is used to transport a second gas. The semiconductor processing method further includes the step of: controlling the on / off state of the first gas channel and / or the second gas channel respectively according to the requirements of the semiconductor processing technology, so as to adjust the mixing ratio of the first gas and the second gas. Attached Figure Description

[0017] The above-described features and advantages of the present invention will be better understood after reading the following detailed description of embodiments of the present disclosure in conjunction with the accompanying drawings. In the drawings, components are not necessarily drawn to scale, and components having similar related characteristics or features may have the same or similar reference numerals.

[0018] Figure 1 A schematic diagram of the structure of a semiconductor processing apparatus provided according to some embodiments of the present invention is shown.

[0019] Figure 2 A schematic diagram of the structure of a spray plate provided according to some embodiments of the present invention is shown.

[0020] Figure 3 A schematic diagram of the internal structure of a spray plate provided according to some embodiments of the present invention is shown.

[0021] Figure 4A A top view of a panel layer provided according to some embodiments of the present invention is shown.

[0022] Figure 4B A bottom view of a panel layer provided according to some embodiments of the present invention is shown.

[0023] Figure 5 A schematic diagram showing the closed and open states of a gas passage provided according to some embodiments of the present invention is shown.

[0024] Figure 6 A cross-sectional schematic diagram of a gas homogenizing layer provided according to some embodiments of the present invention is shown.

[0025] Figure 7 A bottom view of a gas uniform layer provided according to some embodiments of the present invention is shown.

[0026] Figure label:

[0027] 11. Uniform gas layer

[0028] 111 Gas Channel

[0029] 112 Sealing metal rod

[0030] 12 Electromagnetic Control Layer

[0031] 121 Electromagnetic Block

[0032] 13 Panel Layer

[0033] 131 spray nozzles

[0034] 14 Rubber layer

[0035] 15 Fixed Layer

[0036] 31 First Gas Passage

[0037] 32 Second Gas Channel

[0038] 20 Process Chambers

[0039] 30 Vacuum Chamber

[0040] 40 Vacuum Pump Detailed Implementation

[0041] The following specific embodiments illustrate the implementation of the present invention. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. Although the description of the present invention is presented in conjunction with preferred embodiments, this does not mean that the features of the invention are limited to these embodiments. On the contrary, the purpose of describing the invention in conjunction with embodiments is to cover other options or modifications that may be derived based on the claims of the present invention. To provide a thorough understanding of the invention, many specific details will be included in the following description. The invention may also be implemented without using these details. Furthermore, to avoid confusion or obscuring the focus of the invention, some specific details will be omitted in the description.

[0042] In the description of this invention, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this invention based on the specific circumstances.

[0043] Furthermore, the terms "upper," "lower," "left," "right," "top," "bottom," "horizontal," and "vertical" used in the following description should be understood as the orientations shown in the relevant paragraphs and accompanying drawings. These relative terms are for illustrative purposes only and do not imply that the described apparatus must be manufactured or operated in a specific orientation, and therefore should not be construed as limiting the invention.

[0044] It is understood that although terms such as "first," "second," and "third" may be used herein to describe various components, regions, layers, and / or parts, these components, regions, layers, and / or parts should not be limited by these terms, and these terms are only used to distinguish different components, regions, layers, and / or parts. Therefore, the first components, regions, layers, and / or parts discussed below may be referred to as second components, regions, layers, and / or parts without departing from some embodiments of the present invention.

[0045] As mentioned above, in semiconductor manufacturing, thin film deposition, and other fields, the spray plate is a core component for gas distribution in the process chamber, and its structural design directly affects the uniformity of gas and the precision of the deposition process. In existing technologies, the gases used in the deposition process are sprayed through the spray plate, which is equipped with gas supply channels to regulate the gas supply to the entire wafer or a large area. However, the gas supply channels in existing spray plates can only achieve macroscopic on / off control at the wafer diameter scale, and cannot independently regulate the on / off of small areas on the wafer surface. This makes it difficult to individually control the flow state of different gases in tiny areas of the wafer surface in actual processes, thus failing to meet the differentiated deposition requirements of local areas. This limits the realization of fine operations such as local defect repair and micro-area performance optimization in the deposition process, and is detrimental to improving the uniformity and process flexibility of the deposited thin film.

[0046] To overcome the aforementioned deficiencies in the prior art, the present invention provides a spray plate, a semiconductor processing equipment, and a semiconductor processing method. By controlling the on / off state of the circuits of each electromagnetic block, the on / off state of the corresponding gas channel above it can be controlled to spray gas into the process chamber from each small area of ​​the spray plate in a zoned manner, thereby meeting the process requirements of semiconductor processing.

[0047] In some non-limiting embodiments, the spray plate provided in the first aspect of the present invention can be configured in the semiconductor processing apparatus provided in the second aspect of the present invention. The semiconductor processing method provided in the third aspect of the present invention can be implemented based on the semiconductor processing apparatus provided in the second aspect of the present invention.

[0048] Please refer to the details. Figure 1 . Figure 1 A schematic diagram of the structure of a semiconductor processing apparatus provided according to some embodiments of the present invention is shown.

[0049] exist Figure 1 In the illustrated embodiment, the semiconductor processing apparatus provided by the second aspect of the present invention includes a process chamber 20, a spray plate provided by the first aspect of the present invention, and a vacuum chamber 30. Here, the process chamber 20 is used to perform semiconductor processing. The spray plate is used to spray gas into the process chamber 20 for semiconductor processing. The vacuum chamber 30 is connected to an external vacuum pump 40 to maintain the spray plate in a vacuum environment.

[0050] Please refer to further details. Figure 2 and Figure 3 . Figure 2 A schematic diagram of the structure of a spray plate provided according to some embodiments of the present invention is shown. Figure 3 A schematic diagram of the internal structure of a spray plate provided according to some embodiments of the present invention is shown.

[0051] Furthermore, in Figures 1-3 In the illustrated embodiment, the spray plate provided by the first aspect of the present invention includes a gas equalization layer 11, an electromagnetic control layer 12, and a panel layer 13. Here, the gas equalization layer 11 has a gas channel 111. A sealing metal rod 112 is provided in the gas channel 111 for closing the gas channel 111 in a closed state. The electromagnetic control layer 12 has an electromagnetic block 121 corresponding to each sealing metal rod 112 for controlling the sealing metal rod 112 to open the corresponding gas channel 111 in an open state. The panel layer 13 is disposed above the gas equalization layer 11 and has a plurality of spray holes 131 thereon. The gas channel 111 is connected to at least one spray hole 131 for spraying gas into the process chamber 20 above the spray plate.

[0052] Please refer to the reference. Figure 4A and Figure 4B . Figure 4A A top view of a panel layer provided according to some embodiments of the present invention is shown. Figure 4B A bottom view of a panel layer provided according to some embodiments of the present invention is shown.

[0053] exist Figure 4A In the illustrated embodiment, the spray plate provided by the first aspect of the present invention is provided with a spray zone consisting of at least one spray hole 131. Each spray zone corresponds to at least one gas channel 111. Specifically, the spray plate can independently control the on / off state of each gas channel 111 by utilizing the electromagnetic control layer 12 corresponding to the electromagnetic blocks 121 provided in each spray zone, thereby controlling the on / off state of each spray zone in a zoned manner to spray gas into the process chamber.

[0054] exist Figure 4B In the illustrated embodiment, the spray zones are arranged in a grid pattern. Here, the diameter of each spray zone is 10 mm, and the diameter of each spray hole 131 is 1 mm.

[0055] Alternatively, in some embodiments, the spray zones are arranged in a concentric ring shape.

[0056] Alternatively, in some embodiments, the spray zone is divided into a first spray zone at the center and a second spray zone at the edge to regulate the gas distribution in the central and edge regions of the process chamber.

[0057] Specifically, in some embodiments, the spray area can be divided into four fan-shaped regions. Then, a technician can select two non-adjacent regions to turn on and off respectively. Correspondingly, the electromagnetic control layer 12 can be divided into four regions for control. For example, the 500 small regions corresponding to the 500 switches on the electromagnetic control layer 12 can be divided into four large regions corresponding to the fan-shaped spray areas for opening and closing control.

[0058] Those skilled in the art will understand that the above-described embodiments of the division of spray zones on the spray plate are merely some non-limiting implementations provided by the present invention, intended to clearly demonstrate the main concept of the present invention and provide some specific solutions that are easy for the public to implement, rather than intended to limit the scope of protection of the present invention.

[0059] Alternatively, in other embodiments, those skilled in the art can adjust the division of the spray zone according to the process requirements of the semiconductor processing equipment, thereby adjusting the gas distribution inside the process chamber to meet the process requirements of the semiconductor processing technology.

[0060] Furthermore, in Figure 3 In the illustrated embodiment, the gas channel 111 includes a first gas channel 31 and a second gas channel 32. Here, the first gas channel 31 is used to transport a first gas, and the second gas channel 32 is used to transport a second gas. Therefore, the spray plate controls the opening and closing of the first gas channel 31 and / or the second gas channel 32 respectively to adjust the mixing ratio of the first gas and the second gas.

[0061] Specifically, in some embodiments, the first gas is N2 and the second gas is SiH4.

[0062] Please refer to the reference. Figure 3 and Figure 5 . Figure 5 A schematic diagram showing the closed and open states of a gas passage provided according to some embodiments of the present invention is shown.

[0063] exist Figure 3 In the embodiment shown, the first gas passage 31 and the second gas passage 32 are connected to the gas passage 111 via an oblique branch.

[0064] like Figure 5 As shown, in the closed state, one side of the sealing metal rod 112 closes the oblique branch of the first gas channel 31 or the second gas channel 32, and the other side closes the air inlet of the first gas channel 31 or the second gas channel 32.

[0065] When the electromagnetic block 121 is energized, it generates magnetism, which controls the two sides of the sealing metal rod 112 to maintain a distance from the oblique branch and air inlet of the first gas channel 31 or the second gas channel 32, thereby opening the first gas channel 31 or the second gas channel 32.

[0066] Specifically, in some embodiments, the first gas is a process gas and the second gas is an inert gas, which are used to spray into the process chamber 20 at different process stages of the semiconductor processing.

[0067] Furthermore, in some embodiments, the first gas is a first process gas, and the second gas is a second process gas, used to adjust the mixing ratio of the first process gas and the second process gas in the semiconductor processing process. Here, the mixing ratio can be 0%:100%.

[0068] Please refer to further information. Figure 6 and Figure 7 . Figure 6 A cross-sectional schematic diagram of a gas homogenizing layer provided according to some embodiments of the present invention is shown. Figure 7 A bottom view of a gas uniform layer provided according to some embodiments of the present invention is shown.

[0069] like Figure 6 and Figure 7 As shown, the first gas enters through the annular first gas channel 31 of the uniform gas layer 11, and the second gas enters through the annular second gas channel 32 of the uniform gas layer 11.

[0070] In addition, Figure 1 In the illustrated embodiment, the spray plate provided by the first aspect of the present invention further includes a rubber layer 14 and a fixing layer 15. Here, the rubber layer 14 is disposed between the gas equalization layer 11 and the electromagnetic control layer 12, and wraps around each sealing metal rod 112. The fixing layer 15 is disposed between the gas equalization layer 11 and the electromagnetic control layer 12, and is used to seal the junction of the vacuum chamber 30 and the process chamber 20 below the spray plate. Here, each gas channel 111 passes through the fixing layer 15.

[0071] In addition, Figure 1 In the embodiment shown, the electromagnetic control layer 12 also includes a circuit board connected to an external power signal control unit 50, which is used to control the on / off state of the circuit board corresponding to each electromagnetic block 121 according to the control signal generated by the power signal control unit 50.

[0072] The working principle of the semiconductor processing equipment described above will be described below with reference to some embodiments of semiconductor processing methods. Those skilled in the art will understand that these embodiments of processing methods are merely non-limiting implementations provided by the present invention, intended to clearly demonstrate the main concepts of the invention and provide specific solutions convenient for public implementation, rather than limiting all functions or operating methods of the semiconductor processing equipment. Similarly, the semiconductor processing equipment is also only one non-limiting implementation provided by the present invention and does not constitute a limitation on the executing entity and execution order of the steps in these semiconductor processing methods.

[0073] Specifically, technicians can first control the spray plate of the semiconductor processing equipment described above, as provided in the second aspect of the present invention, to spray gas into the upper process chamber 20.

[0074] Then, semiconductor processing can be carried out using the provided gas through the process chamber 20.

[0075] Furthermore, in some embodiments, technicians can generate control signals for the circuit boards corresponding to each electromagnetic block 121 on the electromagnetic control layer 12 of the spray plate based on the gas distribution within the process chamber 20.

[0076] Subsequently, the electromagnetic control layer can control each electromagnetic block 121 to be energized according to the above control signal, thereby controlling each spray zone of the spray plate to open the corresponding gas channel 111 to spray gas into the process chamber 20 above the spray plate.

[0077] In addition, in some embodiments, technicians can control the opening and closing of the first gas channel 31 and / or the second gas channel 32 respectively according to the needs of the semiconductor processing technology, so as to adjust the mixing ratio of the first gas and the second gas, thereby adapting to the different gas composition requirements of different stages in the semiconductor processing technology.

[0078] Specifically, in some preferred embodiments, technicians can adjust the mixing ratio by regulating the duty cycle of the PWM signals in the first gas channel 31 and the second gas channel 32 based on pulse width modulation (PWM) technology. The PWM signal controls the opening and closing time of the channels through periodic on / off pulses. Here, the duty cycle directly determines the actual gas flow time per unit time.

[0079] In summary, the spray plate, semiconductor processing equipment, and semiconductor processing method provided by the present invention can all control the on / off state of the gas channels above each electromagnetic block by controlling the circuit switching of each electromagnetic block, thereby controlling the spraying of gas into the process chamber from each small area of ​​the spray plate in a zoned manner, thus meeting the process requirements of semiconductor processing.

[0080] Although the methods described above are illustrated and depicted as a series of actions for the sake of simplicity, it should be understood and appreciated that these methods are not limited by the order of the actions, as some actions may occur in a different order and / or concurrently with other actions from the illustrations and descriptions herein or not illustrated and described herein but which may be understood by those skilled in the art, according to one or more embodiments.

[0081] The prior description of this disclosure is provided to enable any person skilled in the art to make or use this disclosure. Various modifications to this disclosure will be apparent to those skilled in the art, and the general principles defined herein may be applied to other variations without departing from the spirit or scope of this disclosure. Therefore, this disclosure is not intended to be limited to the examples and designs described herein, but should be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A spray plate, characterized in that, include: A uniform gas layer is provided, wherein a gas channel is provided in the gas channel, and a sealing metal rod is provided in the gas channel for sealing the gas channel in the closed state; An electromagnetic control layer, wherein an electromagnetic block corresponding to each of the sealing metal rods is provided, is used to control the sealing metal rods to open the corresponding gas channels in the open state; and A panel layer is disposed above the gas uniform layer and has multiple spray holes thereon. The gas channel is connected to at least one of the spray holes for spraying gas into the process chamber above the spray plate.

2. The spray plate as described in claim 1, characterized in that, The spray plate is provided with a spray zone consisting of at least one spray hole, and each spray zone corresponds to at least one gas channel. Each of the spray zones is distributed in a grid pattern or in a concentric ring pattern, or The spray area is divided into a first spray area at the center and a second spray area at the edge.

3. The spray plate as described in claim 1, characterized in that, The gas channel includes a first gas channel and a second gas channel. The first gas channel is used to transport a first gas, and the second gas channel is used to transport a second gas. Therefore, the spray plate controls the opening and closing of the first gas channel and / or the second gas channel to adjust the mixing ratio of the first gas and the second gas.

4. The spray plate as described in claim 3, characterized in that, The first gas channel and the second gas passage are connected via an oblique branch, wherein, In the closed state, one side of the sealing metal rod blocks the oblique branch of the first gas channel or the second gas channel, and the other side blocks the air inlet of the first gas channel or the second gas channel. When the electromagnetic block is energized, it generates magnetism, controlling the two sides of the sealing metal rod to maintain a distance from the oblique branch and air inlet of the first gas channel or the second gas channel, thereby opening the first gas channel or the second gas channel.

5. The spray plate as described in claim 3, characterized in that, The first gas is a process gas, and the second gas is an inert gas.

6. The spray plate as described in claim 1, characterized in that, Also includes: A rubber layer is disposed between the gas uniform layer and the electromagnetic control layer, and wraps around each of the sealing metal rods; as well as A fixing layer is disposed between the gas equalization layer and the electromagnetic control layer, and is used to seal the junction between the vacuum chamber below the spray plate and the process chamber, wherein each of the gas channels passes through the fixing layer.

7. The spray plate as described in claim 4, characterized in that, The electromagnetic control layer also includes a circuit board connected to an external power signal control unit, used to control the on / off state of the circuit boards corresponding to each electromagnetic block according to the control signal generated by the power signal control unit.

8. A semiconductor processing apparatus, characterized in that, include: Process chambers are used for semiconductor processing. The spray plate as described in any one of claims 1 to 7 is used to spray gas into the process chamber for semiconductor processing; and A vacuum chamber, connected to an external vacuum pump, is used to place the spray plate in a vacuum environment.

9. A semiconductor processing method, characterized in that, Includes the following steps: Controlling the spray plate of the semiconductor processing equipment as described in claim 8 to spray gas into the upward process chamber; and Semiconductor processing is performed via the process chamber.

10. The semiconductor processing method as described in claim 9, characterized in that, It also includes the following steps: Based on the gas distribution within the process chamber, control signals are generated for the circuit boards corresponding to each electromagnetic block on the electromagnetic control layer of the spray plate. as well as According to the control signal, each of the electromagnetic blocks is energized, thereby controlling each spray zone of the spray plate to open the corresponding gas channel to spray gas into the process chamber above the spray plate.

11. The semiconductor processing method as described in claim 9, characterized in that, The gas channel includes a first gas channel and a second gas channel, wherein the first gas channel is used to transport a first gas, and the second gas channel is used to transport a second gas. The semiconductor processing method further includes the following steps: According to the requirements of the semiconductor processing technology, the opening and closing of the first gas channel and / or the second gas channel are controlled respectively to adjust the mixing ratio of the first gas and the second gas.

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