Polarized device, polariton system, method for manufacturing polariton device, and method for controlling polariton device

Abstract

The invention provides a polariton device, a polariton system, a method of manufacturing the polariton device, and a method of controlling the polariton device. The polarisation device includes: a cavity including a gain layer, the gain layer including a ferrous material, the ferrous material undergoing a phase change in response to an external stimulus to become an asymmetric crystal structure; the upper reflecting layer is formed on the top of the cavity; the lower reflecting layer is formed below the cavity; and a Radar frequency controller configured to control the Radar frequency of the polarisation device by providing stimulation to the gain layer.

Description

[0001] This application claims priority to and the benefit of Korean Patent Application No. 10-2024-0063010, filed on May 14, 2024, in the Korean Intellectual Property Office, the entire contents of which are incorporated herein by reference. TECHNICAL FIELD

[0002] The present disclosure relates to a plasmon device, a plasmon system, a method of manufacturing a plasmon device, and a method of controlling a plasmon device. BACKGROUND

[0003] A plasmon device is an optoelectronic device that utilizes a strong interaction between a photon and an exciton, and can be based on a quasi-particle called a plasmon, which has both optical and electronic properties. Since both optical and electronic properties can be controlled through a plasmon device, plasmon devices are becoming prominent in various fields such as optical switches, quantum computing, and quantum communication systems. The performance of a plasmon device can be closely related to a Rabi frequency. The Rabi frequency is a frequency generated when an external optical field interacts with a particle in a quantum system, and can represent the coupling strength between a photon and an exciton. By adjusting the Rabi frequency, the optical and electronic properties of a plasmon device can be precisely controlled, and as a result, the light emission efficiency, operating speed, and responsiveness of a plasmon device can be optimized. SUMMARY

[0004] The present disclosure attempts to provide a plasmon device, a plasmon system, a method of manufacturing a plasmon device, and a method of controlling a plasmon device, which can effectively adjust a Rabi frequency without changing a design structure of a plasmon device or employing a complex system.

[0005] According to an example embodiment, a plasmon device includes a cavity including a gain layer including a ferroic material that undergoes a phase change to become an asymmetric crystal structure in response to an external stimulus, an upper reflective layer formed on a top of the cavity, a lower reflective layer formed below the cavity, and a Rabi frequency controller configured to control a Rabi frequency of the plasmon device by providing a stimulus to the gain layer.

[0006] In some example embodiments, the ferroic material can include a perovskite material having an ABX3 structure (A: positive ion, B: metal ion, X: halogen ion or oxygen).

[0007] In some example embodiments, the polariton may further include a temperature control device configured to provide a temperature change stimulus to the gain layer, wherein the Rabi frequency controller can control the Rabi frequency of the polariton by changing the temperature change stimulus provided to the gain layer via the temperature control device.

[0008] In some example embodiments, the polarization device may further include: a substrate having an upper surface supporting the lower reflective layer, wherein the temperature control device may be formed and attached to the lower surface of the substrate.

[0009] In some example embodiments, the polariton may further include an electrical control device configured to provide an electrical variation stimulus to the gain layer, wherein the Rabi frequency controller can control the Rabi frequency of the polariton by changing the electrical variation stimulus provided to the gain layer via the electrical control device.

[0010] In some example embodiments, electrodes may be formed in the gain layer, and the electrical control device may be electrically connected to the gain layer via the electrodes.

[0011] In some example embodiments, the polariton device may further include: a qubit generation unit configured to generate polariton qubits based on polaritons, wherein the Rabi frequency controller controls the probability distribution of the upper or lower polaritons of the polariton device by providing stimulation to the gain layer, and the qubit generation unit generates qubits having occupancy states determined according to the controlled probability distribution.

[0012] In some example embodiments, at least one of the upper reflective layer and the lower reflective layer can be formed by alternately stacking a first dielectric layer and a second dielectric layer with different refractive indices, wherein the refractive index of the first dielectric layer is greater than that of the second dielectric layer, the first dielectric layer may include at least one of ZnS, TiO2, Si3N4, Nb2O5, ZnSe and Ta2O5, the second dielectric layer may include at least one of SiO2 and MgF2, and the ferroic material may include MAPbBr3, MAPbI3, MAPbCl3, CsPbBr3 or BiFeO3.

[0013] In some example embodiments, the upper reflective layer may be formed on the top of the cavity using a direct deposition method.

[0014] According to an example embodiment, a polariton system including a polariton device includes: a polariton device including a gain layer comprising a ferroic material that undergoes a phase transition in response to an external stimulus to become an asymmetric crystal structure; a Rabi frequency control device configured to control the Rabi frequency of the polariton device by providing a stimulus to the polariton device; and a quantum state control device configured to control a quantum state based on the controlled Rabi frequency.

[0015] In some example embodiments, the quantum state control device can provide a quantum computer with qubits generated by controlling the quantum state.

[0016] In some example embodiments, the quantum state control device can control the quantum encryption level by controlling the quantum state.

[0017] In some example embodiments, the quantum state control device can precisely adjust the intensity of the optical signal used for the optical modulator by controlling the quantum state.

[0018] According to an example embodiment, a method of manufacturing a polariton device includes: providing a substrate; forming a lower reflective layer on the substrate; forming a cavity on the lower reflective layer, the cavity including a gain layer comprising a ferroic material that undergoes a phase transition in response to an external stimulus to become an asymmetric crystal structure; and forming an upper reflective layer on the cavity, wherein the Rabi frequency of the polariton device is controlled according to a stimulus provided to the gain layer.

[0019] In some example embodiments, the ferroic material may include perovskite materials having an ABX3 structure (A: positive ion, B: metal ion, X: halide ion or oxygen).

[0020] In some example embodiments, the method of manufacturing a polariton may further include forming a temperature control device on the lower surface of the substrate, wherein the Rabi frequency of the polariton is controlled according to a temperature change stimulus provided to the gain layer through the temperature control device.

[0021] In some example embodiments, the step of forming the cavity may further include: forming electrodes on the gain layer, and wherein the method of manufacturing the polariton may further include: connecting an electrical control device through the electrodes, wherein the Rabi frequency of the polariton is controlled according to an electrical change stimulus provided to the gain layer through the electrical control device.

[0022] In some example embodiments, the step of forming the above-described reflective layer may include forming the upper reflective layer on the cavity by a direct deposition method.

[0023] According to an example embodiment, a method for controlling a polariton device includes: providing a polariton device manufactured by the method described above; and controlling the probability distribution of upper or lower polaritons of the polariton device by providing stimulation to the polariton device.

[0024] In some example embodiments, the method of manufacturing polaritons may further include: generating qubits having occupancy states determined according to the controlled probability distribution. Attached Figure Description

[0025] Figure 1 This is a diagram illustrating a polarization exciter according to an example embodiment.

[0026] Figure 2 This is a diagram illustrating a polariton system according to an example embodiment.

[0027] Figure 3 This is a diagram illustrating an implementation example of a gain layer according to an example embodiment.

[0028] Figure 4 This is a diagram illustrating the current switching characteristics of a ferrous material according to an example embodiment.

[0029] Figure 5 This is a diagram illustrating the polarization characteristics of a ferrous material according to an example embodiment.

[0030] Figure 6 and Figure 7 This is a diagram showing the dispersion curve of a polarimeter according to an example embodiment.

[0031] Figure 8A This is a diagram illustrating an example of the variation in exciton oscillator strength of a polariton device according to an exemplary embodiment, and Figure 8B This is a diagram illustrating an example of the variation in the Rabi frequency of a polariton device according to an example embodiment.

[0032] Figure 9 This is a diagram showing the dispersion curves when different methods are used to form the upper reflective layer in a polarimeter according to an example embodiment.

[0033] Figure 10 This is a diagram illustrating a method for manufacturing a polarization exciter according to an example embodiment.

[0034] Figure 11 This is a diagram illustrating a method for controlling a polarization exciter according to an example embodiment.

[0035] Figure 12 This is a diagram illustrating a method for manufacturing a polarization exciter according to an example embodiment. Detailed Implementation

[0036] Hereinafter, exemplary embodiments of the present disclosure will be described in sufficient detail with reference to the accompanying drawings to facilitate practice by those skilled in the art to which this disclosure pertains. As will be appreciated by those skilled in the art, the described exemplary embodiments can be modified in various ways without departing from the spirit or scope of this disclosure. Therefore, the drawings and description are to be considered illustrative rather than restrictive in nature. Throughout the specification, the same reference numerals denote the same elements.

[0037] Throughout the specification and claims, unless expressly stated otherwise, the word "comprising" and variations such as "including" or "having" shall be construed as implying inclusion of the stated element but not excluding any other element. It should be understood that although the terms "first," "second," etc., may be used herein to describe various elements, these elements should not be limited by these terms. These terms are used only to distinguish one element from another.

[0038] Figure 1 This is a diagram illustrating a polarization exciter according to an example embodiment.

[0039] Reference Figure 1 According to the example embodiment, the polarization exciter 1 may include a cavity 10, an upper reflective layer 11, and a lower reflective layer 12.

[0040] The cavity 10 may include a gain layer 100, and the gain layer 100 may include a ferromagnetic material that undergoes a phase transition in response to an external stimulus to become an asymmetric crystal structure. Here, the external stimulus may include a stimulus caused by a temperature change or a stimulus caused by an electrical change. As ferromagnetism develops in the asymmetric crystal structure, the Rabi frequency of the polarimeter can be changed.

[0041] Here, the ferroic material of the gain layer 100 can represent a material whose electrical or magnetic properties change due to external forces (such as electric and magnetic fields). Ferrometry can be exhibited when the arrangement of atoms or molecules in the material is asymmetrical or when it is a polar material. In particular, the phenomenon of polarization due to an external electric field is called ferroelectricity. The magnitude of polarization varies depending on the magnitude and direction of the voltage applied to the material in the polarization voltage curve (or polarization electric field curve) and can appear in the form of circular polarization.

[0042] Ferrous materials can include perovskite materials. Specifically, ferrous materials can include perovskite materials with an ABX3 structure (A: positive ion (e.g., MA (methylammonium ion), Cs ion, FA (formamidinium ion), etc.), B: metal ion (e.g., Pb, Sn, Fe, etc.), X: halide ion or oxygen). Perovskite materials can exhibit ferrous structures in terms of crystal structure, ion arrangement and mobility, and interactions between ions. Furthermore, ferrous materials can even include perovskite-like structures. For example, ferrous materials can include MAPbBr3, MAPbI3, MAPbCl3, CsPbBr3, or BiFeO3.

[0043] In some example embodiments, the gain layer 100 may be formed to have various structures. For example, the gain layer 100 may be formed from a thin film, a single crystal, or a toroidal nanostructure.

[0044] An upper reflective layer 11 may be formed on the top of the cavity 10. The upper reflective layer 11 may include a dispersed Bragg reflector (DBR). Specifically, to form a reflective layer that ensures high reflectivity, two types of dielectric films with large refractive index differences may be alternately stacked. That is, the upper reflective layer 11 may be formed by alternately stacking a first dielectric layer and a second dielectric layer with different refractive indices, and the refractive index of the first dielectric layer may be greater than that of the second dielectric layer. In the upper reflective layer 11, the first dielectric layer may include at least one of, for example, ZnS, TiO2, Si3N4, Nb2O5, ZnSe, and Ta2O5. Additionally, the second dielectric layer may include at least one of, for example, SiO2 and MgF2. This upper reflective layer 11 may be formed by an electron beam evaporator, plasma-enhanced chemical vapor deposition (PECVD), sputtering, etc.

[0045] The lower reflective layer 12 may be formed below the cavity 10. Similar to the upper reflective layer 11, the lower reflective layer 12 may also include a dispersed Bragg reflector in which two dielectric films with a large refractive index difference are alternately stacked. That is, the lower reflective layer 12 is formed by alternately stacking a first dielectric layer and a second dielectric layer with different refractive indices, and the refractive index of the first dielectric layer may be greater than that of the second dielectric layer. In the lower reflective layer 12, the first dielectric layer may include at least one of, for example, ZnS, TiO2, Si3N4, Nb2O5, ZnSe, and Ta2O5. Additionally, the second dielectric layer may include at least one of, for example, SiO2 and MgF2. The lower reflective layer 12 may be formed by electron beam evaporation, PECVD, sputtering, etc.

[0046] In some example embodiments, the same method can be used to form the upper reflective layer 11 and the lower reflective layer 12. Specifically, the upper reflective layer 11 can be formed on the top of the cavity 10 using a direct deposition method, and the lower reflective layer 12 can also be formed below the cavity 10 using a direct deposition method. Therefore, compared to forming the upper reflective layer 11 by a dry transfer method and the lower reflective layer 12 by a direct deposition method, the quality factor (Q factor) of the polarization exciter 1 can be improved.

[0047] The polariton device 1 may also include a Rabi frequency controller 13. The Rabi frequency controller 13 can control the Rabi frequency of the polariton device 1 by providing stimulation to the gain layer 100. Here, the stimulation may include temperature change stimulation or electrical change stimulation.

[0048] In some example embodiments, the polariton device 1 may further include a temperature control device. The temperature control device can provide a temperature change stimulus to the gain layer 100. For example, the polariton device 1 may also include a substrate having an upper surface supporting the lower reflective layer 12, and the temperature control device may be formed attached to the lower surface of the substrate. Here, the temperature control device may be, for example, a miniature temperature-changing unit. The Rabi frequency controller 13 can control the Rabi frequency of the polariton device 1 by changing the temperature change stimulus provided to the gain layer 100 via the temperature control device.

[0049] In some other example embodiments, the polariton device 1 may also include an electrical control device. The electrical control device can provide an electrically varying stimulus to the gain layer 100. For example, electrodes may be formed on the gain layer 100, and the electrical control device may be electrically connected to the gain layer 100 via the electrodes. Here, for example, the electrical control device may be implemented in the form of a capacitor capable of applying an electric field to the gain layer 100. The Rabi frequency controller 13 can control the Rabi frequency of the polariton device 1 by changing the electrically varying stimulus provided to the gain layer 100 via the electrical control device.

[0050] Furthermore, the polariton device 1 can be implemented on a chip and applied to quantum information technologies (e.g., quantum communication, quantum sensors, quantum logic circuits, etc.). In particular, the polariton device 1 can also be used to generate qubits, which can be controlled in a quantum state and used in quantum devices. For example, the polariton device 1 may also include a qubit generation unit 14.

[0051] The qubit generation unit 14 can generate polaritons based on polaritons. Specifically, the Rabi frequency controller 13 can control the probability distribution of the upper or lower polaritons of the polariton device 1 by providing stimulation to the gain layer 100, and the qubit generation unit 14 can generate qubits with occupancy states determined according to the controlled probability distribution.

[0052] Polaritons can be generated by strong coupling between excitons and photons, leading to the formation of modes with two new energy levels. These two modes are classified as upper polaritons and lower polaritons, each in a partially hybridized state of exciton and photon properties. These two polariton states can be used to define qubits. In other words, the state of a qubit can be determined by the occupancy probabilities of the upper and lower polaritons. The occupancy probabilities may be influenced by the ratio of exciton and photon components, energy transitions over time, or decay processes, etc. According to an example embodiment, variations in the Rabi oscillation frequency can alter the distribution of exciton and photon components in the upper and lower polaritons, potentially affecting the energy decay process to generate polariton qubits with various occupancy states. In this case, the probability of occupancy for each polariton state can be determined based on the exciton and photon components, energy transitions over time, or decay processes, etc. In other words, as the polariton Rabi oscillation frequency changes, the number of particles occupied in the upper and lower polariton states changes, which may change the polariton qubit state and generate qubits in various states.

[0053] In existing technologies, the Rabi frequency of a polariton is typically altered by changing its design structure or employing a complex system. For example, to change the Rabi frequency, the length of the cavity is adjusted or the device structure is modified to change the quality factor. Alternatively, a separate magnet capable of applying a magnetic field can be used to modulate the exciton energy, but this requires a magnet large enough to generate a very high level of magnetic field.

[0054] In the case of the polariton device 1 according to this example embodiment, since the ferroic material is included in the gain layer, the symmetry of the crystal reversibly undergoes a phase transition in response to temperature change stimuli or electrical change stimuli to become an asymmetric crystal structure, and spontaneous polarization can be induced to change the exciton oscillator strength. Therefore, the Rabi frequency of the polariton device formed by the interaction of the states of excitons and photons can be controlled without changing the design structure of the polariton device or without using a complex system. For example, even a small temperature change of 80K can cause a large Rabi oscillation frequency change of up to about 20% (about 13 meV). Furthermore, qubits can be generated by controlling the probability distribution of the upper and lower polaritons, making the polariton device 1 applicable to various fields including quantum information technology.

[0055] Figure 2 This is a diagram illustrating a polariton system according to an example embodiment.

[0056] Reference Figure 2 According to the example embodiment, the polariton system 2 may include a polariton device 1, a Rabi frequency controller 21, and a quantum state controller 22. Figure 2Rabi frequency control device 21 and Figure 1 The rabi frequency controller 13 in the middle can perform essentially the same function. However, Figure 1 The Rabi frequency controller 13 is implemented as part of the polarization exciter 1, while Figure 2 The Rabi frequency control device 21 is implemented as part of the polariton system 2.

[0057] The polariton device 1 may include a gain layer comprising an ferroic material that undergoes a phase transition in response to an external stimulus to become an asymmetric crystal structure, and the Rabi frequency control device 21 may control the Rabi frequency of the polariton device 1 by providing a stimulus to the polariton device 1.

[0058] The quantum state control device 22 can control the quantum state based on a controlled Rabi frequency. In some example embodiments, concerning the field of quantum computing, the quantum state control device 22 can provide a quantum computer with qubits generated by controlling the quantum state. In other words, quantum operations can be performed by using the generation of polariton qubits with different occupancy upper and lower polaritons as qubits, the upper and lower polaritons varying with the Rabi oscillation strength. In some other example embodiments, concerning the field of quantum encryption, the quantum state control device 22 can control the level of quantum encryption by controlling the quantum state. In other words, variations in the Rabi oscillation strength can generate various quantum states, meaning that security can be enhanced by expressing quantum encryption methods in a more complex way. In some other example embodiments, concerning the field of optical modulators, the quantum state control device 22 can precisely adjust the intensity of an optical signal used in an optical modulator by controlling the quantum state. An optical modulator is a device that adjusts the intensity, phase, and frequency of an optical signal and can be used for light-based communication, information processing, and sensing. If the intensity of the polariton Rabi oscillation can be controlled, the intensity of the optical signal can be precisely adjusted, thus enabling frequency adjustment and utilization in multi-frequency communication systems. Furthermore, by modulating the phase, high-quality optical communication can be achieved by increasing the transmission rate with higher data density and reducing signal interference.

[0059] Figure 3 This is a diagram illustrating an example implementation of the gain layer according to an example embodiment.

[0060] Reference Figure 3The gain layer according to the example embodiment can be formed as a thin film. Here, the gain layer may include MAPbBr3 as a ferroic material. Specifically, in a nitrogen atmosphere, a spin coater can be used to spin the MAPbBr3 film at 3600 rpm for 60 seconds, and while maintaining the spin, 100 μL of chloroform can be slowly added dropwise over 20 seconds to form a film with nanocrystalline grain size. Furthermore, the stability of the film can be increased by coating the top of the film with polymethyl methacrylate (PMMA) and curing it at 100°C for 10 minutes to form a PMMA layer. Figure 3 Image (a) shows a scanning electron microscope (SEM) image of a gain layer with polycrystalline structure and a thickness of 124 nm. Figure 3 (b) shows a surface SEM image of the gain layer formed by the same manufacturing method, viewed from above.

[0061] In some example embodiments, the upper and lower reflective layers formed above and below the gain layer can be fabricated as a dispersed Bragg reflector having a multilayer structure comprising ZnS as a high-refractive-index dielectric film and MgF2 as a low-refractive-index dielectric film. The upper and lower reflective layers can be formed using an electron beam evaporator, with a deposition rate of 10 Å / s for MgF2, 5 Å / s for ZnS, and 11.5 cycles for the lower reflective layer. In the case of the upper reflective layer, a micro-sized multilayer dispersed Bragg reflector formed at 5.5 cycles can be formed at the top of the cavity using a dry transfer method.

[0062] Figure 4 This is a diagram illustrating the current switching characteristics of a ferrous material according to an example embodiment, and Figure 5 This is a diagram illustrating the polarization characteristics of a ferrous material according to an example embodiment.

[0063] Reference Figure 4 and Figure 5 For MAPbBr3, a ferroic material used as a gain layer, internal polarization can be formed at temperatures with a tetragonal structure. Figure 4 and Figure 5 The dielectric polarization characteristics are illustrated using current-voltage hysteresis and polarization-voltage hysteresis measurements in capacitor-type electrical devices employing bulk MAPbBr3 crystals. MAPbBr3 is orthorhombic in the temperature range of 77 K to 130 K, tetragonal in the temperature range of 130 K to 210 K, and cubic in the temperature range of 210 K or higher. The macroscopic polarization state in the tetragonal crystal system can be confirmed by measuring the current-voltage hysteresis and polarization-voltage hysteresis curves measured at representative temperatures of the three phases.

[0064] Figure 6 andFigure 7 This is a diagram showing the dispersion curve of a polarimeter according to an example embodiment. Figure 8A This is a diagram illustrating an example of the variation in exciton oscillator strength of a polariton device according to an exemplary embodiment, and Figure 8B This is a diagram illustrating an example of the variation in the Rabi frequency of a polariton device according to an example embodiment.

[0065] Angle-resolved reflectance measurements can be used to examine changes in the Rabi oscillation frequency of polarimetric devices due to temperature variations. For example... Figure 6 As shown, the polariton dispersion curve can be examined. In the polariton dispersion curve, the analytical angle corresponds to the x-axis in momentum space, and the y-axis represents the energy in momentum space. The energy difference between the upper and lower polaritons at the momentum where the difference between the exciton energy and cavity mode energy of the polariton device is minimal can be defined as the Rabi oscillation intensity, and the Rabi oscillation frequency can be related to the Rabi oscillation intensity.

[0066] exist Figure 6 In the polariton dispersion curve shown, the difference between the exciton energy and the cavity mode energy is detuned at the point where momentum is 0. Therefore, the momentum defining the Rabi oscillation intensity can be defined as varying depending on the detuning. Figure 7 As shown, the Rabi oscillation intensity can be derived from the dispersion curve of the polarimeter based on temperature.

[0067] Figure 8A The exciton oscillator strength as a function of temperature is shown, where ΔP is the magnitude of the remanent polarization and can represent the degree of residual polarization after the voltage (or electric field) is removed. Large remanent polarization can be interpreted as the presence of a large spontaneously generated dipole moment within the material. The exciton oscillator strength is smallest in the tetragonal phase with large remanent polarization, and the exciton oscillator strength is proportional to the Rabi frequency; therefore, the exciton oscillator strength varies accordingly with the magnitude of the remanent polarization. Next, refer to... Figure 8B It can be seen that the Rabi frequency response varies with the exciton oscillator strength. Figure 8B In this context, represents the Rabi oscillation intensity. Since the Rabi oscillation intensity is a value obtained by multiplying the Rabi frequency by Planck's constant, it is a value proportional to the Rabi frequency and can be considered to represent the same scale. In other words, by controlling ferromagnetism, the exciton oscillator intensity is affected, which, based on ferromagnetism, changes the Rabi frequency as a function of the interaction between excitons and photons.

[0068] For example, depending on temperature changes, the Rabi oscillation intensity can change by about 13 meV, from a maximum of 77 meV to 64 meV.

[0069] Figure 9This is a diagram showing the dispersion curves when different methods are used to form the upper reflective layer in a polarimeter according to an example embodiment.

[0070] In the case of the upper reflective layer of the polarimeter, the method of dry transfer microscale multilayer dispersed Bragg reflector can be modified. Specifically, the multilayer dispersed Bragg reflector can be formed by direct deposition on top of the cavity of the polarimeter using an electron beam evaporator. Figure 9 In the image, (a) shows the dispersion curve of the polarimeter when the upper reflective layer is formed by dry transfer printing, and (b) shows the dispersion curve of the polarimeter when the upper reflective layer is formed by direct deposition. Figure 9 In both (a) and (b), the lower reflective layer is formed by direct deposition. By changing the method of forming the upper reflective layer, the quality factor of the polarization exciter can be improved due to the stronger contact with the cavity, and the surface of the polarization exciter can be ensured to be flat. Figure 9 As shown in (b), it can be seen that the quality factor of the polarization exciter is improved as the curve width (widening) decreases.

[0071] Figure 10 This is a diagram illustrating a method for manufacturing a polarization exciter according to an example embodiment.

[0072] Reference Figure 10 A method for manufacturing a polariton device according to an example embodiment may include: providing a substrate (S1001); forming a lower reflective layer on the substrate (S1002); forming a cavity including a gain layer on the lower reflective layer (S1003), the gain layer comprising a ferroic material that undergoes a phase transition in response to an external stimulus to become an asymmetric crystal structure; and forming an upper reflective layer on the cavity (S1004). Here, the Rabi frequency of the polariton device can be controlled according to the stimulus provided to the gain layer.

[0073] In some example embodiments, the method may further include forming a temperature control device on the lower surface of the substrate, and controlling the Rabi frequency of the polariton device based on temperature change stimuli provided to the gain layer through the temperature control device.

[0074] In some example embodiments, operation S1003 may further include forming an electrode in the gain layer, and the method may further include connecting an electrical control device via the electrode to control the Rabi frequency of the polariton device according to an electrical change stimulus provided to the gain layer via the electrical control device.

[0075] For further details regarding the above methods, please refer to the example embodiments described in this specification; therefore, redundant descriptions are omitted here.

[0076] Figure 11This is a diagram illustrating a method for controlling a polarization exciter according to an example embodiment.

[0077] Reference Figure 11 The method for controlling a polariton according to an example embodiment may include: providing a polariton manufactured by the method according to the example embodiment (S1101); and controlling the probability distribution of an upper polariton or a lower polariton by providing a stimulus to the polariton (S1102).

[0078] In some example embodiments, the method may further include generating qubits having occupancy states determined according to a controlled probability distribution (S1103).

[0079] For further details regarding the above methods, please refer to the example embodiments described in this specification; therefore, redundant descriptions are omitted here.

[0080] Figure 12 This is a diagram illustrating a method for manufacturing a polarization exciter according to an example embodiment.

[0081] Reference Figure 12 A method for manufacturing a polarization exciter according to an example embodiment includes: providing a substrate (S1201); forming a lower reflective layer on the substrate by direct deposition (S1202); forming a cavity including a gain layer on the lower reflective layer, the gain layer including a ferroic material that undergoes a phase transition in response to an external stimulus to become an asymmetric crystal structure (S1203); and forming an upper reflective layer on the cavity by direct deposition (S1204).

[0082] For further details regarding the above methods, please refer to the example embodiments described in this specification; therefore, redundant descriptions are omitted here.

[0083] According to the example embodiments described so far, since ferroic material is included as the gain layer, the symmetry of the crystal can reversibly undergo a phase transition in response to temperature or electrical changes to become an asymmetric crystal structure, and spontaneous polarization can be induced within the material to change the strength of the exciton oscillator. Therefore, the Rabi frequency of the polariton, formed by the interaction of exciton and photon states, can be controlled without altering the design structure of the polariton or employing a complex system.

[0084] While this disclosure has been described in conjunction with exemplary embodiments, it should be understood that the invention is not limited to the disclosed exemplary embodiments, but rather is intended to cover various modifications and equivalents included within the spirit and scope of the appended claims.

Claims

1. A polarization exciter, comprising: The cavity includes a gain layer comprising a ferroic material that undergoes a phase transition in response to an external stimulus to become an asymmetric crystal structure. An upper reflective layer is formed on the top of the cavity; A lower reflective layer is formed below the cavity; and A Rabi frequency controller is configured to control the Rabi frequency of the polariton by providing stimulation to the gain layer.

2. The polarization exciter according to claim 1, wherein: The ferroic material includes perovskite material with an ABX3 structure, wherein A: positive ion, B: metal ion, and X: halide ion or oxygen.

3. The polarization exciter according to claim 1, further comprising: A temperature control device is configured to provide a temperature change stimulus to the gain layer. The Rabi frequency controller controls the Rabi frequency of the polariton device by changing the temperature change stimulus provided to the gain layer via the temperature control device.

4. The polarization exciter according to claim 3, further comprising: The substrate has an upper surface that supports the lower reflective layer. The temperature control device is formed to be attached to the lower surface of the substrate.

5. The polarization device according to claim 1, further comprising: An electrical control device is configured to provide an electrical change stimulus to the gain layer. The Rabi frequency controller controls the Rabi frequency of the polariton device by changing the electrical variation stimulus provided to the gain layer via the electrical control device.

6. The polarization exciter according to claim 5, wherein: Electrodes are formed in the gain layer, and The electrical control device is electrically connected to the gain layer via the electrode.

7. The polarization exciter according to claim 1, further comprising: The qubit generation unit is configured to generate polaritons based on polaritons. The Rabi frequency controller controls the probability distribution of the upper or lower polaritons of the polariton device by providing stimulation to the gain layer. The qubit generation unit generates qubits having an occupancy state determined according to the controlled probability distribution.

8. The polarization exciter according to claim 1, wherein: At least one of the upper reflective layer and the lower reflective layer is formed by alternately stacking a first dielectric layer and a second dielectric layer with different refractive indices, wherein the refractive index of the first dielectric layer is greater than that of the second dielectric layer. The first dielectric layer includes at least one of ZnS, TiO2, Si3N4, Nb2O5, ZnSe, and Ta2O5. The second dielectric layer comprises at least one of SiO2 and MgF2, and The ferroic materials include MAPbBr3, MAPbI3, MAPbCl3, CsPbBr3, or BiFeO3.

9. The polarization exciter according to claim 8, wherein: The upper reflective layer is formed on the top of the cavity using a direct deposition method.

10. A polariton system including a polariton device, the polariton system comprising: A polarization exciter includes a gain layer comprising a ferroic material that undergoes a phase transition in response to an external stimulus to form an asymmetric crystal structure. A Rabi frequency control device is configured to control the Rabi frequency of the polariton by providing stimulation to the polariton; and A quantum state control device is configured to control the quantum state based on the controlled Rabi frequency.

11. The polariton system according to claim 10, wherein: The quantum state control device provides a quantum computer with qubits generated by controlling the quantum state.

12. The polariton system according to claim 10, wherein: The quantum state control device controls the quantum encryption level by controlling the quantum state.

13. The polariton system according to claim 10, wherein: The quantum state control device precisely adjusts the intensity of the optical signal used in the optical modulator by controlling the quantum state.

14. A method for manufacturing a polarization exciter, the method comprising: Provide substrate; A lower reflective layer is formed on the substrate; A cavity is formed on the lower reflective layer, the cavity including a gain layer comprising a ferroic material that undergoes a phase transition in response to an external stimulus to form an asymmetric crystal structure; and An upper reflective layer is formed on the cavity. The Rabi frequency of the polariton is controlled based on the stimulus provided to the gain layer.

15. The method according to claim 14, wherein: The ferroic material includes perovskite material with an ABX3 structure, wherein A: positive ion, B: metal ion, and X: halide ion or oxygen.

16. The method of claim 14, further comprising: A temperature control device is formed on the lower surface of the substrate. The Rabi frequency of the polariton device is controlled based on the temperature change stimulus provided to the gain layer by the temperature control device.

17. The method of claim 14, wherein: The step of forming the cavity further includes: Electrodes are formed on the gain layer, and The method further includes: The electrodes are connected to the electrical control device. The Rabi frequency of the polariton is controlled by an electrical change stimulus provided to the gain layer through the electrical control device.

18. The method of claim 14, wherein: The steps for forming the upper reflective layer include: The upper reflective layer is formed on the cavity by direct deposition.

19. A method for controlling a polarization exciter, the method comprising: A polariton device manufactured by the method of manufacturing a polariton device according to any one of claims 14-18 is provided; as well as The probability distribution of the upper or lower polaritons of the polariton is controlled by providing stimulation to the polariton.

20. The method according to claim 19, further comprising: A qubit is generated having an occupancy state determined according to the controlled probability distribution.

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