Lower electrode device and semiconductor process equipment

Abstract

The invention discloses a lower electrode device and semiconductor process equipment, and belongs to the technical field of semiconductors. The lower electrode device comprises a lower electrode main body, a first isolation piece and a gas supply assembly, the gas supply assembly is connected with the lower electrode main body through the first isolation piece, the lower electrode main body is provided with a first back gas channel, the first isolation piece is provided with a second back gas channel, and a gas conveying pipeline of the gas supply assembly is communicated with the first back gas channel through the second back gas channel; the first separator is an insulating structure. Therefore, the gas supply assembly and the lower electrode main body are separated by the insulating structure, and the lower electrode main body is not conductively connected with the gas supply assembly, so that the gas supply assembly is prevented from having radio frequency voltage, and the problem of sparking of the gas supply assembly in a starting range is effectively avoided.

Description

TECHNICAL FIELD

[0001] The present application belongs to the technical field of semiconductor technology, and particularly relates to a lower electrode device and a semiconductor process chamber. BACKGROUND

[0002] In the technical field of semiconductor technology, a lower electrode device is arranged in a semiconductor process chamber, the lower electrode device comprises a lower electrode body and a gas supply assembly, the inside of the lower electrode body has an adsorption electrode, a direct current voltage is provided for the adsorption electrode by using a power supply, so that electrostatic adsorption force is generated between the adsorption electrode and a wafer, and the wafer is fixed on a bearing surface of the lower electrode body. During a process, the back gas pressure provided by the gas supply assembly is usually 8 Torr or above (less than 20 Torr under vacuum conditions), so that the lower electrode body can provide stable and sufficient adsorption force for the wafer during the whole process.

[0003] When the adsorption electrode is in a power-off state, the electrostatic adsorption force between the adsorption electrode and the wafer no longer exists, and a gap exists between the lower electrode body and the wafer. The back gas provided by the gas supply assembly flows out from the gap, which causes the gas leakage value to increase, and the wafer is desorbed. Therefore, the adsorption state of the wafer can be judged by detecting the gas leakage value. Specifically, during the process (i.e., during the power-on process of the adsorption electrode), if the detected gas leakage value is less than a standard value, it indicates that the adsorption state of the wafer is good; if the detected gas leakage value is greater than the standard value, it indicates that the wafer is not stably adsorbed, and the adsorption function fails. After the process ends, if the detected gas leakage value is greater than the standard value, it indicates that the desorption is successful; if the detected gas leakage value is less than the standard value, it indicates that the desorption fails.

[0004] In the prior art, the gas supply assembly is installed on the lower electrode body by screws. When the adsorption electrode in the lower electrode body is applied with a radio frequency voltage, the gas supply assembly also has the radio frequency voltage because the gas supply assembly directly contacts the lower electrode body, and thus the sparking problem is easily caused in the environment with a back gas pressure of about 8T (a vacuum environment with a pressure of less than 20T can enable sparking). SUMMARY

[0005] The purpose of the embodiments of the present application is to provide a lower electrode device and a semiconductor process equipment, which can solve the problem that the gas supply assembly in the semiconductor process chamber is easily charged with voltage and radio frequency in the related art.

[0006] In a first aspect, the embodiments of the present application provide a lower electrode device applied to a semiconductor process equipment, the lower electrode device comprising a lower electrode body, a first isolation member and a gas supply assembly, wherein the gas supply assembly is connected to the lower electrode body through the first isolation member, the lower electrode body is provided with a first back gas passage, the first isolation member is provided with a second back gas passage, a gas conveying pipeline of the gas supply assembly is communicated with the first back gas passage through the second back gas passage, and the first isolation member is of an insulating structure.

[0007] In a second aspect, the embodiments of the present application further provide a semiconductor process equipment comprising the lower electrode device.

[0008] In the embodiments of the present application, the lower electrode device is additionally provided with the first isolation member, the gas supply assembly is connected to the lower electrode body through the first isolation member, and the first isolation member is of an insulating structure. In this way, the gas supply assembly is not directly in contact with the lower electrode body, and the gas supply assembly and the lower electrode body are separated by the insulating structure. Therefore, even if the lower electrode body has a radio frequency voltage, the lower electrode body will not be in conductive connection with the gas supply assembly, thereby avoiding the gas supply assembly from having a radio frequency voltage and effectively avoiding the problem of sparking of the gas supply assembly in the ignition range. BRIEF DESCRIPTION OF DRAWINGS

[0009] Figure 1 is a sectional view of the lower electrode device disclosed by the embodiments of the present application;

[0010] Figure 2 is a partial sectional view of the lower electrode device disclosed by the embodiments of the present application;

[0011] Figure 3 is a structural schematic view of a second isolation member disclosed by the embodiments of the present application;

[0012] Figure 4 is a structural schematic view of a first communication pipe disclosed by the embodiments of the present application;

[0013] Figure 5 is a structural schematic view of a second communication pipe disclosed by the embodiments of the present application;

[0014] Figure 6 is a principle schematic view of the gas supply assembly detecting a gas leakage value disclosed by the embodiments of the present application.

[0015] BRIEF DESCRIPTION OF DRAWINGS

[0016] 100 - lower electrode body, 110 - chuck, 110a - chuck passage, 120 - interface disc, 120a - interface disc passage,

[0017] 200 - first back gas passage,

[0018] 300a - second back gas passage, 310 - first partition, 311 - opening, 312 - accommodating cavity, 320 - second partition, 320a - curved passage, 321 - first communication pipe, 321a - first through hole, 321b - first flow uniformizing groove, 322 - second communication pipe, 322a - second through hole, 322b - second flow uniformizing groove,

[0019] 400 - gas supply assembly, 410 - gas pipe, 420 - joint, 430 - first pneumatic valve, 431 - flange,

[0020] 510 - first temperature sensor, 520 - light sensitive sensor, 530 - second temperature sensor, 540 - humidity sensor, 550 - air pressure detecting element, 560 - dry pump,

[0021] 610 - lower electrode base, 620 - lower electrode bottom plate, 630 - partition plate, 640 - heat insulation plate,

[0022] 700 - wafer,

[0023] 810 - first seal, 820 - second seal, 830 - third seal, 840 - fourth seal, 850 - fifth seal, 860 - sixth seal, 870 - seventh seal, 880 - eighth seal,

[0024] 910 - filter valve, 920 - pressure reducing valve, 930 - pressure gauge, 940 - filter, 950 - second pneumatic valve, 960 - PC gauge, 970 - third pneumatic valve, 980 - fourth pneumatic valve, 990 - fifth pneumatic valve, 991 - needle valve. DETAILED DESCRIPTION

[0025] The technical solutions in the embodiments of the present application will be clearly described below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only some of the embodiments of the present application, but not all of them. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art belong to the scope of protection of the present application.

[0026] The terms "first", "second", etc. in the specification and claims of the present application are used to distinguish similar objects, and are not used to describe a specific order or sequence. It should be understood that the data used in this way can be interchanged under appropriate circumstances, so that the embodiments of the present application can be implemented in an order other than those illustrated or described herein, and the objects distinguished by "first", "second", etc. are generally a category, and are not limited to the number of objects, for example, the first object can be one or more. In addition, "and / or" in the specification and claims means at least one of the connected objects, and the character " / ", generally indicates that the front and rear associated objects are in an "or" relationship.

[0027] The lower electrode device and the semiconductor process equipment provided by the embodiments of the present application will be described in detail below with reference to the specific embodiments and application scenarios thereof in combination with the drawings.

[0028] Please refer to Figures 1-6 The lower electrode device disclosed by the embodiments of the present application comprises a lower electrode body 100, a first isolation piece 310 and a gas supply assembly 400, wherein the lower electrode body 100 is used to provide a wafer adsorption environment, the gas supply assembly 400 is connected with the lower electrode body 100 through the first isolation piece 310, and the first isolation piece 310 and the gas supply assembly 400 and the first isolation piece 310 and the lower electrode body 100 can be connected through welding, bonding, screw connection and the like respectively, and the first isolation piece 310 is used to isolate the gas supply assembly 400 and the lower electrode body 100.

[0029] In the embodiment, the gas provided by the gas supply assembly 400 is helium, and of course, the gas supply assembly 400 can also provide other gases.

[0030] The lower electrode body 100 is provided with a first back gas passage 200, the first isolation piece 310 is provided with a second back gas passage 300a, and the gas supply pipe of the gas supply assembly 400 is communicated with the first back gas passage 200 through the second back gas passage 300a, so that the gas flows out from the outlet end of the gas supply assembly 400, sequentially flows through the second back gas passage 300a and the first back gas passage 200 and reaches the wafer bearing surface of the lower electrode body 100. Moreover, the first isolation piece 310 is of an insulating structure. Optionally, the first isolation piece 310 can be of a non-metal structure, and further optionally, the material of the first isolation piece 310 can be plastic, ceramic, resin material and the like, or the first isolation piece 310 can also be of a metal structure without electric conduction effect, which can conductively isolate the gas supply assembly 400 and the lower electrode body 100.

[0031] Optionally, as shown in Figure 1 and Figure 2 The lower electrode body 100 comprises a chuck 110 and an interface disc 120, wherein the chuck 110 is used to bear and adsorb the wafer 700, the interface disc 120 provides a supporting force for the chuck 110, the interface disc 120 is located below the chuck 110, the interface disc 120 is connected with the chuck 110, and the chuck 110 has a wafer bearing surface which faces away from the interface disc 120; the first isolation piece 310 and the gas supply assembly 400 are arranged on the side of the interface disc 120 which faces away from the chuck 110, the gas supply assembly 400 is connected with the interface disc 120 through the first isolation piece 310, and the gas supply assembly 400 is used to provide the gas for the chuck 110 through the interface disc 120. Optionally, the chuck 110 can be an electrostatic chuck or other kinds of chuck 110.

[0032] Specifically, the chuck 110 is provided with a chuck passage 110a, the interface disc 120 is provided with an interface disc passage 120a, the chuck passage 110a is opposite to and communicates with the interface disc passage 120a, and the chuck passage 110a and the interface disc passage 120a jointly form the first back gas passage 200. The interface disc passage 120a communicates with the second back gas passage 300a.

[0033] In the embodiment of the present application, the first isolation member 310 is additionally arranged on the lower electrode device, the gas supply assembly 400 is connected to the electrode main body 100 through the first isolation member 310, and the first isolation member 310 is an insulating structure. In this way, the gas supply assembly 400 is not in direct contact with the electrode main body 100, and the gas supply assembly 400 is separated from the electrode main body 100 by the insulating structure. Therefore, even if the electrode main body 100 has a radio frequency voltage, the electrode main body 100 will not be in conductive connection with the gas supply assembly 400, thereby avoiding the radio frequency voltage of the gas supply assembly 400 and effectively avoiding the sparking problem of the gas supply assembly 400 in the ignition range.

[0034] In an optional embodiment, as shown in Figure 2 The lower electrode device further includes a second isolation member 320, and the second isolation member 320 is an insulating structure. The first isolation member 310 is provided with an opening hole 311 and a receiving cavity 312 that are connected in communication. The receiving cavity 312 is located between the opening hole 311 and the first back gas passage 200, and the second isolation member 320 is arranged in the receiving cavity 312. The second isolation member 320 is provided with a vertical passage, the opening hole 311 is opposite to and communicates with the vertical passage, and the opening hole 311 and the vertical passage jointly form the second back gas passage 300a. Optionally, the receiving cavity 312 is a slot, and the slot faces the interface disc 120.

[0035] Optionally, the second isolation member 320 can be a non-metal structure, and further optionally, the material of the second isolation member 320 can be plastic, ceramic, resin material, etc. Alternatively, the second isolation member 320 can also be a metal structure without conductive effect. The material of the second isolation member 320 can be the same as or different from the material of the first isolation member 310.

[0036] In another embodiment, the second isolation member 320 is provided with a curved passage 320a, the curved passage 320a communicates with the opening hole 311, and the opening hole 311 and the curved passage 320a jointly form the second back gas passage 300a. In this embodiment, the material of the first isolation member 310 is resin, and the material of the second isolation member 320 is ceramic.

[0037] By using the curved passage 320a to replace the vertical passage in this embodiment, the path length of the second back gas passage 300a can be increased, the radio frequency distance can be further increased, and the probability of sparking can be reduced.

[0038] In an optional embodiment, as shown in Figures 2-5As shown, the second partition 320 comprises a first communicating pipe 321 and a second communicating pipe 322, the first communicating pipe 321 and the second communicating pipe 322 are arranged along the direction of the axis of the opening 311, the first communicating pipe 321 is provided with a first through hole 321a extending along the axis of the first communicating pipe 321, the second communicating pipe 322 is provided with a second through hole 322a extending along the axis of the second communicating pipe 322, the first through hole 321a and the second through hole 322a are arranged staggered and communicated.

[0039] Optionally, the first communicating pipe 321 is located above the second communicating pipe 322, the first through hole 321a is communicated with the second back gas channel 300a, and the second through hole 322a is communicated with the opening 311; or, the second communicating pipe 322 is located above the first communicating pipe 321, the second through hole 322a is communicated with the second back gas channel 300a, and the first through hole 321a is communicated with the opening 311.

[0040] By adopting the embodiment, the second partition 320 is divided into two parts of the first communicating pipe 321 and the second communicating pipe 322, that is, the second partition 320 adopts a split structure, and corresponding through holes are directly arranged on the first communicating pipe 321 and the second communicating pipe 322, so that the through holes on different structures form the curved channel 320a together, which is beneficial to simplify the process.

[0041] Of course, in other embodiments, the second partition 320 can be a one-piece structure, and the curved channel 320a is directly arranged in the interior of the second partition 320.

[0042] In an optional embodiment, the first communicating pipe 321 can be provided with only one first through hole 321a, and the second communicating pipe 322 can be provided with only one second through hole 322a.

[0043] In another embodiment, the first communicating pipe 321 is provided with at least two first through holes 321a, and the second communicating pipe 322 is provided with at least two second through holes 322a, the first through holes 321a and the second through holes 322a are communicated one by one, and the corresponding first through holes 321a and the second through holes 322a are arranged staggered. Optionally, the first through hole 321a is arranged at a position close to the center of the first communicating pipe 321, the second through hole 322a is arranged at a position close to the edge of the second communicating pipe 322, the plurality of first through holes 321a are arranged at the central region of the first communicating pipe 321, and the plurality of second through holes 322a can be distributed along the circumference of the second communicating pipe 322.

[0044] With the embodiment, the at least two first through holes 321a are in one-to-one correspondence with the at least two second through holes 322a, respectively. Then, the second isolation piece 320 is provided with a plurality of curved channels 320a, so that the gas flowing through the second isolation piece 320 can be divided and pass through the plurality of curved channels 320a, and the flow paths of all the gas can be basically lengthened, which is more conducive to reducing the probability of sparking.

[0045] In the embodiment, the first communication pipe 321 is provided with 12 first through holes 321a, and the second communication pipe 322 is provided with 12 second through holes 322a. The diameters of the first through holes 321a and the second through holes 322a are both 0.5 mm. In this way, the hole diameters of the first communication pipe 321 and the second communication pipe 322 are equal to the hole diameter of the standard welding pipeline, i.e., 6 mm, which ensures that the gas can be smoothly delivered.

[0046] In an optional embodiment, as shown in Figure 4 The first communication pipe 321 is provided with a first flow uniformizing groove 321b, and each first through hole 321a is in communication with the first flow uniformizing groove 321b. Optionally, when the first communication pipe 321 is located below the second communication pipe 322, each first through hole 321a can be in communication with each second through hole 322a of the second communication pipe 322 through the first flow uniformizing groove 321b; when the first communication pipe 321 is located above the second communication pipe 322, each first through hole 321a is in communication with the first back gas channel 200 of the lower electrode body 100 through the first flow uniformizing groove 321b.

[0047] By arranging the first flow uniformizing groove 321b, the gas flowing through each first communication pipe 321 can enter the first flow uniformizing groove 321b for mixing and further enter the second through hole 322a or the first back gas channel 200, which is conducive to improving the mixing uniformity of the gas.

[0048] Of course, in other embodiments, the first communication pipe 321 can be provided with a plurality of first communication holes. When the first communication pipe 321 is located below the second communication pipe 322, each first through hole 321a is in communication with each second through hole 322a through each first communication hole; when the first communication pipe 321 is located above the second communication pipe 322, each first through hole 321a is in communication with the first back gas channel 200 of the lower electrode body 100 through each first communication hole.

[0049] In an optional embodiment, as shown in Figure 5As shown, the second communication pipe 322 is provided with a second uniform flow groove 322b, and each second through hole 322a is in communication with the second uniform flow groove 322b. Optionally, when the first communication pipe 321 is located above the second communication pipe 322, each second through hole 322a can be in communication with each first through hole 321a of the first communication pipe 321 through the second uniform flow groove 322b; when the first communication pipe 321 is located below the second communication pipe 322, each second through hole 322a can be in communication with the first back gas passage 200 of the lower electrode body 100 through the second uniform flow groove 322b.

[0050] By arranging the second uniform flow groove 322b, the gas flowing through each second communication pipe 322 can be mixed in the second uniform flow groove 322b and further enter the first through hole 321a or the first back gas passage 200, which is conducive to improving the uniformity of gas mixing.

[0051] Of course, in other embodiments, the second communication pipe 322 can be provided with a plurality of second communication holes, and each second through hole 322a is in communication with each first through hole 321a through each second communication hole when the first communication pipe 321 is located above the second communication pipe 322; each second through hole 322a can be in communication with the first back gas passage 200 of the lower electrode body 100 through each second communication hole when the first communication pipe 321 is located below the second communication pipe 322.

[0052] In an optional embodiment, the number of second isolation members 320 is one, that is, one first communication pipe 321 and one second communication pipe 322 are arranged.

[0053] In another embodiment, referring to Figure 2 and Figure 3 As shown, the number of second isolation members 320 is at least two, and the curved passages 320a of the at least two second isolation members 320 are in communication in the direction of the axis of the opening 311. Optionally, the number of first communication pipes 321 and the number of second communication pipes 322 are both at least two, and the first communication pipes 321 and the second communication pipes 322 are alternately arranged in the direction of the axis of the opening 311, that is, one second communication pipe 322 is arranged between two adjacent first communication pipes 321, and one first communication pipe 321 is arranged between two adjacent second communication pipes 322, so that the curved passages 320a formed by the at least two second isolation members 320 are similar to a labyrinth structure.

[0054] The arrangement of the at least two second isolation members 320 makes the at least two curved passages 320a in communication in sequence, further prolongs the path length of the second back gas passage 300a, further increases the radio frequency distance, and reduces the probability of sparking.

[0055] In the scheme of the present application, asFigure 1 As shown, the gas supply assembly 400 includes a gas pipe 410, which can be made of resin or other materials. The lower electrode device further includes at least one of a first temperature sensor 510 and a photosensitive sensor 520, and the at least one of the first temperature sensor 510 and the photosensitive sensor 520 is arranged on the gas pipe 410. When the temperature value detected by the first temperature sensor 510 is higher than a first preset temperature value, it indicates that the temperature of the gas pipe 410 is relatively high, and there is a risk of sparking. At this time, the lower electrode device alarms. Alternatively, when the photosensitive sensor 520 detects that there is light in the gas pipe 410, it indicates that there is abnormal light inside the gas pipe 410, and there is a risk of sparking. At this time, the lower electrode device alarms. It should be noted that the first preset temperature value is a temperature value set by the user as needed.

[0056] That is, the lower electrode device can be provided with only the first temperature sensor 510 or the photosensitive sensor 520, or can be provided with both the first temperature sensor 510 and the photosensitive sensor 520.

[0057] By using the first temperature sensor 510 or the photosensitive sensor 520 to feedback whether there is a risk of sparking inside the gas pipe 410, the embodiment can alarm when the risk is high, and timely prompt the user to find the sparking problem and stop the process in time.

[0058] Of course, in other embodiments, the lower electrode device can not be provided with the first temperature sensor 510 and the photosensitive sensor 520, and can feedback whether there is a risk of sparking by setting other detection elements to detect other physical quantities.

[0059] In optional embodiments, the lower electrode device further includes at least one of a humidity sensor 540 and a second temperature sensor 530, and the at least one of the humidity sensor 540 and the second temperature sensor 530 is arranged on the first isolation piece 310. When the humidity value detected by the humidity sensor 540 is greater than a preset humidity value, it indicates that the humidity of the first isolation piece 310 is relatively high, and at this time, the lower electrode device alarms. Alternatively, when the temperature value detected by the second temperature sensor 530 is higher than a second preset temperature value, it indicates that the temperature of the first isolation piece 310 is relatively high, and there is a risk of sparking. At this time, the lower electrode device alarms.

[0060] Optionally, the lower electrode device can be provided with an alarm, and the alarm is in communication connection with each sensor described above. The lower electrode device alarms through the alarm.

[0061] By using the second temperature sensor 530 or the humidity sensor 540 to feedback whether there is a risk of sparking in the first isolation piece 310, the embodiment can alarm when the risk is high, and timely prompt the user to find the sparking problem and stop the process in time.

[0062] Of course, in other embodiments, the lower electrode device may not be equipped with the second temperature sensor 530 and humidity sensor 540. Other detection elements can be used to detect other physical quantities to provide feedback on whether there is a risk of arcing.

[0063] In the scheme of this application, reference is made to Figures 1-2 As shown, the gas supply assembly 400 includes a gas pipe 410, a connector 420, and a first pneumatic valve 430. The outlet end of the gas pipe 410 is connected to the connector 420. The first pneumatic valve 430 is disposed between the connector 420 and the first isolator 310. The inlet end of the first pneumatic valve 430 is connected to the connector 420, and the outlet end of the first pneumatic valve 430 is connected to the second back air passage 300a. Thus, the gas supplied by the gas pipe 410 flows sequentially through the connector 420 and the first pneumatic valve 430 into the second back air passage 300a of the first isolator 310. Optionally, the outlet end of the first pneumatic valve 430 is connected to the first isolator 310 via a flange 431.

[0064] like Figure 6 As shown, the lower electrode device also includes a pressure detection element 550. The pressure detection element 550 can be, but is not limited to, a vacuum gauge. The pressure detection element 550 is disposed in the air pipe 410, so it can detect the air pressure value of the air pipe 410. The pressure detection element 550 is used to provide feedback on the air leakage value of the air supply assembly 400 when the air pipe 410 is in a vacuum state and the first pneumatic valve 430 is in a closed state. Optionally, an eighth sealing element 880 is provided between the air pipe 410 and the connector 420, and the pressure detection element 550 can provide feedback on whether there is a leak at the connection between the air pipe 410 and the connector 420.

[0065] Optionally, according to Figure 6 The schematic diagram shows that the air pipe 410 is sequentially equipped with a filter valve 910, a pressure reducing valve 920, a pressure gauge 930, a filter 940, a second pneumatic valve 950, a PC gauge 960, a third pneumatic valve 970, a needle valve 991, and a fourth pneumatic valve 980. Among them, the filter valve 910, pressure reducing valve 920, pressure gauge 930, and filter 940 respectively perform the functions of filtering, pressure reducing, pressure display, and filtration. The PC gauge 960 and needle valve 991 jointly control the pressure and flow rate of nitrogen. The air pressure detection element 550 and the fifth pneumatic valve 990 are connected in series and in parallel with the branch where the third pneumatic valve 970, needle valve 991, and fourth pneumatic valve 980 are located. The lower electrode device also includes a dry pump 560, which is connected to the air pipe 410.

[0066] Therefore, before the process, the first pneumatic valve 430, the third pneumatic valve 970 and the fifth pneumatic valve 990 are closed, the fourth pneumatic valve 980 is opened, and the dry pump 560 is started to vacuum the air pipe 410 for a period of time. The pressure value detected by the air pressure detection element 550 is used to feedback the air leakage value. If the air leakage value is large, it means that the leakage rate is large, and the problem needs to be checked. After the air leakage value is normal, the process is started. When the process is started, whether there is a risk of sparking is monitored by the sensors in the above, so as to monitor the adsorption state of the wafer 700.

[0067] By using the air pressure detection element 550 to detect and feedback the air leakage value of the air pipe 410, the abnormal situation of the air pipe 410 can be found in time before the process and processed, and the problem of air leakage of the air pipe 410 in the process can be avoided.

[0068] Of course, in other embodiments, the lower electrode device can not be provided with the air pressure detection element 550, and other detection elements can be provided to detect other physical quantities to feedback the air leakage value of the air pipe 410.

[0069] In optional embodiments, as shown in Figure 1 The lower electrode device further includes at least one of a first sealing member 810 and a second sealing member 820. The first sealing member 810 is arranged between the first isolation member 310 and the lower electrode body 100. Optionally, the first sealing member 810 is arranged between the first isolation member 310 and the interface disc 120. The second sealing member 820 is arranged between the first isolation member 310 and the gas supply assembly 400. That is, the lower electrode device can be provided with only the first sealing member 810, or only the second sealing member 820, or both the first sealing member 810 and the second sealing member 820. Optionally, the outlet end of the gas supply assembly 400 is provided with a flange 431, and the gas supply assembly 400 is connected to the first isolation member 310 through the flange 431. The second sealing member 820 is arranged between the flange 431 and the first isolation member 310. The first sealing member 810 and the second sealing member 820 are both sealing rings, which can be but are not limited to rubber rings.

[0070] In this way, the first sealing member 810 can seal the gap between the first isolation member 310 and the lower electrode body 100, and the second sealing member 820 can seal the gap between the first isolation member 310 and the gas supply assembly 400, which is conducive to improving the sealing performance.

[0071] Of course, in other embodiments, the first seal 810 can not be provided between the first isolation member 310 and the lower electrode body 100, and the first isolation member 310 and the lower electrode body 100 can be tightly connected; the second seal 820 can not be provided between the first isolation member 310 and the gas supply assembly 400, and the first isolation member 310 and the gas supply assembly 400 can be tightly connected.

[0072] Optionally, the lower electrode device further comprises a lower electrode bottom plate 620, a lower electrode base 610, a heat insulation member 640, and an isolation member, the lower electrode bottom plate 620 is arranged at the bottom of the lower electrode base 610, the heat insulation member 640 and the isolation member are both mounted on the top of the lower electrode base 610, the interface disc 120 is located at the opening of the isolation plate 630 and the heat insulation member 640, the third seal 830 is arranged between the chuck 110 and the isolation plate 630 to seal the gap between the chuck 110 and the isolation plate 630; the fourth seal 840 is arranged between the heat insulation member 640 and the lower electrode base 610 to seal the gap between the heat insulation member 640 and the lower electrode base 610, so as to isolate the inside of the chamber from the outside atmosphere; the fifth seal 850 is arranged between the lower electrode base 610 and the lower electrode bottom plate 620 to seal the gap between the lower electrode base 610 and the lower electrode bottom plate 620; the sixth seal 860 is arranged between the lower electrode base 610 and the reaction chamber outside the lower electrode device to isolate the atmospheric environment; and the seventh seal 870 is further arranged between the chuck 110 and the interface disc 120 to seal the gap between the chuck 110 and the interface disc 120.

[0073] Optionally, the third seal 830, the fourth seal 840, the fifth seal 850, the sixth seal 860, the seventh seal 870, and the eighth seal 880 in the above can all be sealing rings.

[0074] Optionally, the chuck 110 and the isolation plate 630 can be connected through first screws, the isolation plate 630, the heat insulation member 640, and the lower electrode base 610 can be connected through second screws, the lower electrode base 610 and the lower electrode bottom plate 620 can be connected through third screws, and the lower electrode bottom plate 620 and the reaction chamber can be connected through fourth screws. Of course, the components can also be connected by welding or other means.

[0075] Based on the lower electrode device disclosed in the present application, the embodiment of the present application further discloses a semiconductor process equipment, which comprises the lower electrode device in the above-mentioned embodiments. In this way, the lower electrode device of the semiconductor process equipment is additionally provided with the first isolation member 310, so that the gas supply assembly 400 is not in direct contact with the lower electrode body 100, and the gas supply assembly 400 is separated from the lower electrode body 100 by the insulating structure. Therefore, even if the lower electrode body 100 has a radio frequency voltage, the lower electrode body 100 will not be in conductive connection with the gas supply assembly 400, and the gas supply assembly 400 is further prevented from having a radio frequency voltage, thereby effectively avoiding the sparking problem of the gas supply assembly 400 in the ignition range.

[0076] The embodiments of the present application are described above in combination with the drawings, but the present application is not limited to the above-mentioned specific embodiments, and the above-mentioned specific embodiments are only illustrative but not restrictive. Those skilled in the art can make many forms under the inspiration of the present application without departing from the scope of the present application and the scope protected by the claims, which all belong to the protection of the present application.

Claims

1. A lower electrode device, applied in semiconductor process equipment, characterized in that, The lower electrode device includes a lower electrode body (100), a first isolation member (310), and a gas supply assembly (400). The gas supply assembly (400) is connected to the lower electrode body (100) through the first isolation member (310). The lower electrode body (100) is provided with a first back air channel (200), and the first isolation member (310) is provided with a second back air channel (300a). The gas supply pipeline of the gas supply assembly (400) is connected to the first back air channel (200) through the second back air channel (300a). The first isolation member (310) is an insulating structure.

2. The lower electrode device according to claim 1, characterized in that, The lower electrode device further includes a second isolation member (320), which is an insulating structure. The first isolation member (310) is provided with a communicating opening (311) and a receiving cavity (312). The receiving cavity (312) is located between the opening (311) and the first back air channel (200). The second isolation member (320) is disposed in the receiving cavity (312) and is provided with a curved channel (320a). The curved channel (320a) communicates with the opening (311). The opening (311) and the curved channel (320a) together form the second back air channel (300a).

3. The lower electrode device according to claim 2, characterized in that, The second isolation member (320) includes a first connecting pipe (321) and a second connecting pipe (322). The first connecting pipe (321) and the second connecting pipe (322) are arranged along the direction of the axis of the opening (311). The first connecting pipe (321) is provided with a first through hole (321a), and the second connecting pipe (322) is provided with a second through hole (322a). The first through hole (321a) and the second through hole (322a) are staggered and connected to each other. The first through hole (321a) and the second through hole (322a) together form the curved channel (320a).

4. The lower electrode device according to claim 3, characterized in that, The first connecting pipe (321) is provided with at least two first through holes (321a) at intervals, and the second connecting pipe (322) is provided with at least two second through holes (322a) at intervals. The first through holes (321a) and the second through holes (322a) are connected in a one-to-one correspondence, and the corresponding first through holes (321a) and second through holes (322a) are staggered.

5. The lower electrode device according to claim 4, characterized in that, The first connecting pipe (321) is provided with a first flow equalization groove (321b), and each of the first through holes (321a) is connected to the first flow equalization groove (321b); And / or, the second connecting pipe (322) is provided with a second flow equalization groove (322b), and each of the second through holes (322a) is connected to the second flow equalization groove (322b).

6. The lower electrode device according to claim 2, characterized in that, The number of the second isolation member (320) is at least two. At least two second isolation members (320) are arranged sequentially in the direction of the axis of the opening (311), and the curved channels (320a) of each second isolation member (320) are connected.

7. The lower electrode device according to claim 1, characterized in that, The gas supply assembly (400) includes a gas pipe (410), and the lower electrode device further includes at least one of a first temperature sensor (510) and a photosensitive sensor (520), wherein at least one of the first temperature sensor (510) and the photosensitive sensor (520) is disposed in the gas pipe (410). The lower electrode device alarms when the temperature value detected by the first temperature sensor (510) is higher than the first preset temperature value, or when the photosensitive sensor (520) detects light in the air tube (410).

8. The lower electrode device according to claim 1, characterized in that, The lower electrode device further includes at least one of a humidity sensor (540) and a second temperature sensor (530), wherein at least one of the humidity sensor (540) and the second temperature sensor (530) is disposed on the first insulating member (310). The lower electrode device will alarm if the humidity value detected by the humidity sensor (540) is greater than the preset humidity value, or if the temperature value detected by the second temperature sensor (530) is higher than the second preset temperature value.

9. The lower electrode device according to claim 1, characterized in that, The air supply assembly (400) includes an air pipe (410), a connector (420), and a first pneumatic valve (430). The outlet end of the air pipe (410) is connected to the connector (420). The first pneumatic valve (430) is disposed between the connector (420) and the first isolator (310). The inlet end of the first pneumatic valve (430) is connected to the connector (420), and the outlet end of the first pneumatic valve (430) is connected to the second back air channel (300a). The lower electrode device further includes a pressure detection element (550), which is disposed in the air pipe (410). The pressure detection element (550) is used to provide feedback on the air leakage value of the air supply assembly (400) when the air pipe (410) is in a suction state and the first pneumatic valve (430) is in a closed state.

10. The lower electrode device according to claim 1, characterized in that, The lower electrode device further includes at least one of a first seal (810) and a second seal (820), wherein the first seal (810) is disposed between the first isolation member (310) and the lower electrode body (100), and the second seal (820) is disposed between the first isolation member (310) and the gas supply assembly (400).

11. A semiconductor process apparatus, characterized in that, Includes the lower electrode device as described in any one of claims 1-10.

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