X-ray nondestructive testing system based on optical memristor

Abstract

The invention discloses an X-ray nondestructive testing system based on optical memristors, X-rays are converted into visible light through a scintillator, the visible light irradiates the optical memristors to change the resistance values of the memristors, and the voltage values of different memristors can be obtained by introducing the same current to each optical memristor. Therefore, the light intensity corresponds to the light intensity of each position, and the light intensity is related to the X-ray intensity of the position, so that the voltage value of the optical memristor can be associated with the ray intensity. By means of the characteristic that sensing, storage and calculation of the memristor are integrated, measurement information does not need to be processed and stored through multiple circuits and multiple chips, spatial distribution of X-ray intensity can be obtained by collecting voltage values on the memristor, and the problem that an existing X-ray nondestructive testing system is complex in structure can be effectively solved. The composition structure and the detection process of the X-ray nondestructive detection system are simplified, and the detection cost is reduced.

Description

TECHNICAL FIELD

[0001] The application belongs to the technical field of detecting by radiation penetrating materials in industry, and particularly relates to an X-ray nondestructive detection system based on an optical memristor. BACKGROUND

[0002] The X-ray nondestructive detection technology is to utilize the attenuation characteristics of X-rays penetrating detection materials due to internal structural differences to realize nondestructive detection and quality evaluation of unknown objects in packages and internal defects of workpieces. A scintillator detection system is disclosed in Chinese Patent CN105784734A. At present, the X-ray nondestructive detection system mainly consists of a scintillator and an optical imaging system. The optical imaging system mainly includes a light collection component, a photoelectric conversion device and electronic instruments. The scintillator is used to convert X-rays penetrating detection materials into visible light. The light collection component adopts a lens group to collect and converge the visible light into the photoelectric conversion device. The photoelectric conversion device mainly adopts a photomultiplier tube or a silicon photodiode to convert the visible light into a current signal. The electronic instruments adopt signal amplification, signal processing and digital-to-analog conversion circuits and a storage unit. The current signal is first amplified and converted into a voltage signal, then the voltage signal is filtered and pulse-shaped processed, and finally the analog voltage signal is converted into a digital signal and imported into the storage unit for computer reading and imaging processing. It can be seen that the current X-ray nondestructive detection system has a complex structure, a high cost and a cumbersome detection process. It needs multiple circuits to jointly process and store voltage values at different positions through the storage unit for reading and imaging. Multiple electronic components are easy to affect the detection efficiency and accuracy. Therefore, it is necessary to design a simpler and more reliable X-ray nondestructive detection system. SUMMARY

[0003] In view of the above problems of the prior art, the purpose of the present application is to provide an X-ray nondestructive detection system based on an optical memristor, which solves the technical problem of complex structure of the current X-ray nondestructive detection system and achieves the effects of simplified structure and reduced cost.

[0004] To solve the above technical problems, the present application adopts the following technical scheme: An X-ray nondestructive detection system based on an optical memristor, comprising an X-ray source and a sensing and storage integrated radiation detector, and a sample to be detected is placed between the X-ray source and the sensing and storage integrated radiation detector. The sensing and storage integrated radiation detector comprises a first conversion assembly and a second conversion assembly. The first conversion assembly comprises a scintillator, and the second conversion assembly comprises a plurality of optical memristors distributed in a plane. The optical memristor comprises a top electrode, a light-sensitive memristor functional layer and a bottom electrode which are sequentially stacked. The top electrode is made of transparent conductive material. The first conversion assembly and the second conversion assembly are stacked, and the top electrode of the optical memristor is attached to the scintillator.

[0005] Further, the optical memristors are arranged in a planar matrix.

[0006] Further, the scintillators are arranged one-to-one with the optical memristors, and the top electrodes of the optical memristors are attached to the corresponding scintillators.

[0007] Further, the first conversion assembly further comprises a first bearing plate, and the scintillators are arranged through the first bearing plate.

[0008] Further, the X-ray nondestructive detection system based on the optical memristor further comprises a signal reader, which is configured to pass the same current through the optical memristors respectively, and read the voltages of the optical memristors respectively.

[0009] Further, the second conversion assembly further comprises a second bearing plate, and the optical memristors are arranged on the second bearing plate and connected to the second bearing plate.

[0010] Further, the second bearing plate is provided with a plurality of wiring assemblies, which are arranged one-to-one with the optical memristors, and each of the wiring assemblies comprises a top wiring electrode and a bottom wiring electrode arranged through the second bearing plate, the top wiring electrode is arranged on one side of the corresponding optical memristor and connected to the top electrode of the optical memristor at one end and located on the side of the second bearing plate away from the optical memristor at the other end, and the bottom wiring electrode is connected to the bottom electrode of the optical memristor at one end and located on the side of the second bearing plate away from the optical memristor at the other end.

[0011] Further, the signal reader comprises a plurality of reading circuits arranged one-to-one with the optical memristors, and each of the reading circuits comprises a direct current power supply, a voltmeter and a grounding end, the positive electrode of the direct current power supply is electrically connected to the corresponding top wiring electrode, the negative electrode is electrically connected to the corresponding bottom wiring electrode and the grounding end, and the voltmeter is electrically connected between the corresponding top wiring electrode and bottom wiring electrode.

[0012] Compared with the prior art, the present application has the following advantages: The X-ray nondestructive detection system based on the optical memristor disclosed by the application realizes conversion from rays to visible light through a scintillator, and then realizes conversion from visible light to resistance through an optical memristor. The optical memristor has the characteristics of integration of induction, calculation and storage. The induction characteristic is that the optical memristor responds to the optical signal and the corresponding resistance value changes. The calculation characteristic is that after the resistance of the optical memristor changes due to the optical signal, the same current is input into each optical memristor, and different voltage values can be obtained, so as to correspond to the light intensity of each position. The light intensity is related to the X-ray intensity of the position. Therefore, the voltage value of the optical memristor can be related to the ray intensity. The voltage data corresponding to the ray intensity can be directly obtained through the optical memristor without the cooperation of multiple circuits for processing. The storage characteristic is that the resistance value of the optical memristor can be stably stored without external stimulation. As long as the current is input, the voltage data corresponding to the ray intensity can be obtained without the need to import a storage unit. The application forms a radiation detector with the functions of sensing and storage through the scintillator and the optical memristor. The nonvolatile resistance state corresponding to the ray intensity can be directly obtained and read without the joint processing of multiple circuits or the import of a storage unit. The problem of complex structure of the current X-ray nondestructive detection system can be effectively solved, which is beneficial to simplify the composition structure and detection process of the X-ray nondestructive detection system and reduce the detection cost. BRIEF DESCRIPTION OF DRAWINGS

[0013] Figure 1 The schematic diagram of the X-ray nondestructive detection system based on the optical memristor is described for the embodiment; Figure 2 The structural schematic diagram of the first conversion assembly is described for the embodiment; Figure 3 The structural schematic diagram of the second conversion assembly is described for the embodiment; Figure 4 The connection schematic diagram of the optical memristor, the scintillator and the reading circuit is described for the embodiment; Figure 5 The matrix distribution example diagram of the voltage corresponding to the optical memristor is described; Figure 6 The two-dimensional distribution example diagram of the ray intensity through the sample to be measured is described; Among them, X-ray source 1, sample to be measured 2, first conversion assembly 3, second conversion assembly 4, signal reader 5, first bearing plate 31, scintillator 32, optical memristor 41, second bearing plate 42, top connection line pole 43, bottom connection line pole 44, direct current power supply 45, voltmeter 46, ground terminal 47. DETAILED DESCRIPTION

[0014] In order to make the purposes, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be described clearly and completely below with reference to the drawings in the embodiments of the present application.

[0015] Embodiments Please refer to Figure 1 An X-ray nondestructive testing system based on an optical memristor includes an X-ray source 1 and a sensing and storing integrated radiation detector, and a sample to be measured 2 is placed between the X-ray source 1 and the sensing and storing integrated radiation detector. Figure 2 The first conversion assembly 3 includes a scintillator 32. Figure 3 The second conversion assembly 4 includes a plurality of optical memristors 41 distributed in a plane, and each optical memristor 41 includes a top electrode, a photosensitive memristor functional layer and a bottom electrode which are sequentially stacked, and the top electrode is made of a transparent conductive material. Figure 4 The first conversion assembly 3 and the second conversion assembly 4 are stacked, and the top electrode of the optical memristor 41 is attached to the scintillator 32.

[0016] In the X-ray nondestructive testing system based on the optical memristor, the X-ray source 1 provides X-rays acting on the sample to be measured 2, and the X-rays penetrating through each position of the sample to be measured 2 are attenuated to different degrees. Figure 5 The attenuated X-rays act on the scintillator 32, the scintillator 32 absorbs the energy of the X-rays, so that the electrons are in an excited state and emit visible light of a specific wavelength in the de-excitation process. Figure 6 The photons generated by the scintillator 32 act on the optical memristor 41, the photons penetrate the top electrode and hit the photosensitive memristor functional layer, so that the resistance of the photosensitive memristor functional layer changes.

[0017] The X-ray nondestructive detection system based on the optical memristor has the advantages that the conversion from the rays to the visible light is realized through the scintillator 32, and then the conversion from the visible light to the resistance is realized through the optical memristor 41; the optical memristor 41 has the characteristics of sensing, calculation and storage, the sensing characteristic is that the optical memristor 41 has a response to the light signal and corresponds to the change of the resistance value, the calculation characteristic is that after the resistance of the optical memristor 41 changes due to the light signal, the same current is input into each optical memristor 41, and different voltage values can be obtained, so that the light intensity of each position is corresponded, the light intensity is related to the X-ray intensity of the position, and therefore the voltage value of the optical memristor 41 can be related to the ray intensity, that is, the voltage data corresponding to the ray intensity can be directly obtained through the optical memristor 41, and multiple circuits are not needed to cooperate in processing, and the storage characteristic is that the resistance value of the optical memristor 41 can be stably stored under the condition that there is no external stimulation, and the voltage data corresponding to the ray intensity can be obtained by inputting the current, and a storage unit is not needed to be introduced.

[0018] The X-ray nondestructive detection system based on the optical memristor has the advantages that the conversion from the rays to the visible light is realized through the scintillator 32, and then the conversion from the visible light to the resistance is realized through the optical memristor 41; the optical memristor 41 has the characteristics of sensing, calculation and storage, the sensing characteristic is that the optical memristor 41 has a response to the light signal and corresponds to the change of the resistance value, the calculation characteristic is that after the resistance of the optical memristor 41 changes due to the light signal, the same current is input into each optical memristor 41, and different voltage values can be obtained, so that the light intensity of each position is corresponded, the light intensity is related to the X-ray intensity of the position, and therefore the voltage value of the optical memristor 41 can be related to the ray intensity, that is, the voltage data corresponding to the ray intensity can be directly obtained through the optical memristor 41, and multiple circuits are not needed to cooperate in processing, and the storage characteristic is that the resistance value of the optical memristor 41 can be stably stored under the condition that there is no external stimulation, and the voltage data corresponding to the ray intensity can be obtained by inputting the current, and a storage unit is not needed to be introduced.

[0019] Please refer to Figure 1 and Figure 3 , the plurality of optical memristors 41 are distributed in a plane matrix, and in the implementation, the plurality of optical memristors 41 can also be designed to be distributed in other shapes of planes, such as concentric multi-ring distribution, but compared with the matrix distribution in the plane, the voltage data correspond to the matrix distribution, and it is more convenient to perform two-dimensional imaging based on the voltage data, and it is beneficial to reduce the imaging difficulty.

[0020] Please refer to Figure 1 and Figure 2 , the scintillator 32 has a plurality of scintillators corresponding to the plurality of optical memristors 41, and the top electrode of the optical memristor 41 is attached to the corresponding scintillator 32; in this way, compared with using a whole scintillator 32, using a plurality of small scintillators 32 corresponding to each optical memristor 41 makes the visible light received by each optical memristor 41 independent of each other, avoids mutual interference, and is beneficial to improve the accuracy of detection; in order to further avoid mutual interference and improve the accuracy of detection, a circle of light-blocking material can also be wrapped on the side surface of the scintillator 32 in the implementation.

[0021] Please refer to Figure 2The first conversion assembly 3 further comprises a first bearing plate 31, and the scintillators 32 are arranged on the first bearing plate 31 in a penetrating manner; in this way, the first bearing plate 31 provides a mounting basis for each scintillator 32 without affecting the receiving of the ray energy by the scintillators 32 and the transmission of the converted visible light to the corresponding optical memristor 41, and facilitates the planar matrix distribution of each scintillator 32 and the positioning and mounting of each scintillator 32 through the first bearing plate 31 during assembly, so as to correspond to each optical memristor 41 one by one.

[0022] Please refer to Figure 1 The X-ray nondestructive detection system based on the optical memristor further comprises a signal reader 5, which is configured to pass the same size of current through each optical memristor 41 and read the voltage of each optical memristor 41; in this way, because the energy transmitted to each scintillator 32 by the rays through the sample 2 to be detected is different, the visible light intensity emitted by each scintillator 32 and acting on each optical memristor 41 is different, and the corresponding resistance value of each optical memristor 41 is different; based on Ohm's law, because the resistance value of each optical memristor 41 is different, the voltage across each optical memristor 41 is also different after the same size of current is passed, and the voltage difference reflects the intensity of the radiation penetrating the sample 2 to be detected; after the signal reader 5 reads the voltage of each optical memristor 41, the voltage can be processed into an image by a computer provided by the existing X-ray nondestructive detection system.

[0023] Please refer to Figure 1 and Figure 3 The second conversion assembly 4 further comprises a second bearing plate 42, and the optical memristor 41 is arranged on the second bearing plate 42 and connected with the second bearing plate 42; in this way, the second bearing plate 42 provides a mounting basis for each optical memristor 41, which facilitates the planar matrix distribution of each optical memristor 41 and facilitates the positioning and mounting of each optical memristor 41 through the second bearing plate 42 during assembly, so as to correspond to each scintillator 32 one by one; in this embodiment, the second bearing plate 42 is a PCB plate, so that the second bearing plate 42 can be used to arrange lines for passing current and detecting voltage to the optical memristor 41.

[0024] Specifically, please refer to Figure 3 and Figure 4The second carrier plate 42 is provided with a plurality of wiring components, which correspond one-to-one with the plurality of optical memristors 41. The wiring components include a top terminal 43 and a bottom terminal 44 that pass through the second carrier plate 42. The top terminal 43 is located on one side of the corresponding optical memristor 41, and one end is connected to the top electrode of the corresponding optical memristor 41, while the other end is located on the side of the second carrier plate 42 away from the optical memristor 41. One end of the bottom terminal 44 is connected to the bottom electrode of the corresponding optical memristor 41, while the other end is located on the side of the second carrier plate 42 away from the optical memristor 41. In this way, the bottom electrode of the top electrode of the optical memristor 41 is led to the second carrier plate 42, which is a PCB board, through the top terminal 43 and the bottom terminal 44, respectively. That is, the top terminal 43 and the bottom terminal 44 serve as pins for connecting the optical memristor 41 and the second carrier plate 42, so as to facilitate the electrical connection between the second carrier plate 42 and the optical memristor 41.

[0025] Please see Figure 3 and Figure 4 The signal reader 5 includes several reading circuits, each corresponding to one of the optical memristors 41. Each reading circuit includes a DC power supply 45, a voltmeter 46, and a ground terminal 47. The positive terminal of the DC power supply 45 is electrically connected to the corresponding top terminal 43, and the negative terminal and the corresponding bottom terminal 44 are electrically connected to the ground terminal 47. The voltmeter 46 is electrically connected between the corresponding top terminal 43 and the bottom terminal 44. Thus, each reading circuit provides an equal current to the corresponding optical memristor 41 through the DC power supply 45, and detects the voltage across the optical memristor 41 through the voltmeter 46. This voltage detection is simple and reliable, improving the practicality of the X-ray non-destructive testing system based on optical memristors. In this embodiment, each DC power supply 45 is provided by a constant current source to ensure the same current. Since the second carrier plate 42 uses a PCB board, each reading circuit can be directly mounted on the second carrier plate 42, which improves the integration of the X-ray non-destructive testing system based on optical memristors.

[0026] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention and not to limit the technical solutions. Those skilled in the art should understand that any modifications or equivalent substitutions to the technical solutions of the present invention without departing from the spirit and scope of the present invention should be covered within the scope of the claims of the present invention.

Claims

1. An X-ray nondestructive testing system based on optical memristors, characterized in that: The device includes an X-ray source and a photodetector, with the sample to be tested placed between the X-ray source and the photodetector. The photodetector includes a first conversion component and a second conversion component. The first conversion component includes a scintillator, and the second conversion component includes several optical memristor units distributed in a planar manner. Each optical memristor includes a top electrode, a photosensitive memristor functional layer, and a bottom electrode stacked sequentially. The top electrode is made of a transparent conductive material. The first and second conversion components are stacked, and the top electrode of the optical memristor is attached to the scintillator.

2. The X-ray nondestructive testing system based on optical memristors according to claim 1, characterized in that: The optical memristors are arranged in a planar matrix.

3. The X-ray nondestructive testing system based on optical memristors according to claim 1, characterized in that: There are several scintillators, each corresponding to one of the optical memristors, and the top electrode of the optical memristor is attached to the corresponding scintillator.

4. The X-ray nondestructive testing system based on optical memristors according to claim 1, characterized in that: The first conversion component also includes a first carrier plate, with a scintillator disposed through the first carrier plate.

5. The X-ray nondestructive testing system based on optical memristors according to claim 1, characterized in that: The X-ray nondestructive testing system based on optical memristors also includes a signal reader, which is used to pass currents of the same magnitude through the plurality of optical memristors respectively and read the voltage of the plurality of optical memristors respectively.

6. The X-ray nondestructive testing system based on optical memristors according to claim 5, characterized in that: The second conversion assembly also includes a second carrier plate, an optical memristor is disposed on the second carrier plate, and the bottom electrode is connected to the second carrier plate.

7. The X-ray nondestructive testing system based on optical memristors according to claim 6, characterized in that: The second carrier plate is provided with a plurality of wiring components, each of which corresponds to a plurality of optical memristors. Each wiring component includes a top terminal and a bottom terminal that pass through the second carrier plate. The top terminal is located on one side of the corresponding optical memristor, with one end connected to the top electrode of the corresponding optical memristor and the other end located on the side of the second carrier plate away from the optical memristor. One end of the bottom terminal is connected to the bottom electrode of the corresponding optical memristor, and the other end is located on the side of the second carrier plate away from the optical memristor.

8. The X-ray nondestructive testing system based on optical memristors according to claim 7, characterized in that: The signal reader includes several reading circuits, each corresponding to one of the optical memristors. Each reading circuit includes a DC power supply, a voltmeter, and a ground terminal. The positive terminal of the DC power supply is electrically connected to the corresponding top terminal, and the negative terminal and the corresponding bottom terminal are electrically connected to the ground terminal. The voltmeter is electrically connected between the corresponding top terminal and the bottom terminal.

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