MEMS heat dissipation device and electronic equipment

Abstract

The application relates to the technical field of heat dissipation of electronic components, and discloses a MEMS heat dissipation device and electronic equipment, wherein the MEMS heat dissipation device comprises a base, an accommodating cavity, an air inlet and an air outlet are formed in the base; a refrigeration module is formed on the base and comprises a first heat dissipation fin and a second heat dissipation fin; the refrigeration module is configured to be in operation, the temperature of the first heat dissipation fin is lower than that of the second heat dissipation fin, the first heat dissipation fin can be in contact with an element to be cooled, and the second heat dissipation fin is located in the accommodating cavity; an airflow driving comb tooth is formed at one end of the accommodating cavity and comprises a static comb tooth and a movable piece; the movable piece can drive airflow to flow into the accommodating cavity from the air inlet, flow through the second heat dissipation fin to take away heat, and then flow out from the air outlet. The MEMS heat dissipation device disclosed by the application has the advantages of small volume, high heat dissipation capacity and good heat dissipation uniformity.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of heat dissipation of electronic components, and in particular to a MEMS heat dissipation device and an electronic device. BACKGROUND

[0002] In recent years, the design of chip, CPU and other heat dissipation elements evolves towards higher operating speed and higher integration, and their physical size is also continuously reduced. A large amount of heat will be generated when the heat dissipation element operates at high speed, and if this heat cannot be timely discharged, the temperature of the heat dissipation element will rapidly rise, when the accumulated temperature exceeds the maximum junction temperature, not only the thermal throttling mechanism will be triggered, which seriously affects the computing efficiency and user experience, but also the heat dissipation element may fail, and long-term work in a high-temperature environment will accelerate the electromigration and material aging of the heat dissipation element and its surrounding components, significantly shortening the service life of the product. Most of the existing technologies use manifold micro-channel heat dissipation to cool the heat dissipation element, although the manifold micro-channel heat dissipation utilizes micro-channels to strengthen heat exchange, but its flow path is usually short, and the cooling medium stays in the flow passage for a short time, resulting in poor heat dissipation capacity and heat uniformity.

[0003] In addition, with the increasingly significant miniaturization and precision development trend of electronic devices, more stringent compactness and high-efficiency heat dissipation requirements are put forward for their heat dissipation structures. However, the common heat dissipation structures on the market still have limitations in size optimization, and it is difficult to fully meet the heat dissipation needs of electronic devices in limited space, thereby restricting the further reduction of the overall size of electronic devices. SUMMARY

[0004] Based on the above, the purpose of the present application is to provide a MEMS heat dissipation device and an electronic device, which has high heat dissipation capacity and good heat dissipation uniformity, and the heat dissipation efficiency is greatly improved. This heat dissipation device also has the advantage of small size, which is beneficial to the miniaturization development of electronic devices.

[0005] To achieve the above purpose, the technical scheme adopted by the present application is as follows:

[0006] A MEMS heat dissipation device, comprising:

[0007] a substrate, a containing cavity, an air inlet and an air outlet are formed in the substrate, the air inlet and the air outlet are in communication with the containing cavity;

[0008] a refrigeration module formed on the substrate and comprising a first heat dissipation fin and a second heat dissipation fin, the refrigeration module is configured to have a temperature of the first heat dissipation fin lower than that of the second heat dissipation fin when working, the first heat dissipation fin can be in contact with a heat dissipation element and absorb heat, and the second heat dissipation fin is located in the containing cavity;

[0009] The airflow driving comb tooth is formed at one end of the accommodating cavity and comprises a static comb tooth and a movable member, and the movable member can drive airflow to flow into the accommodating cavity from the air inlet, flow through the second heat dissipation fin to take away heat, and then flow out from the air outlet.

[0010] As a preferred solution of the MEMS heat dissipation device, the refrigeration module further comprises a plurality of N-type diffusion well regions and a plurality of P-type diffusion well regions, the plurality of N-type diffusion well regions and the plurality of P-type diffusion well regions are sequentially and spaced apart, the refrigeration module further comprises a first electrical connection layer formed on the first heat dissipation fin and a second electrical connection layer formed on the second heat dissipation fin, the same end of the N-type diffusion well region and the P-type diffusion well region are electrically connected through the first electrical connection layer, the other end of the N-type diffusion well region and the P-type diffusion well region are electrically connected through the second electrical connection layer, and the second electrical connection layer, the N-type diffusion well region, the first electrical connection layer and the P-type diffusion well region are sequentially and electrically connected to form a series electrical loop.

[0011] As a preferred solution of the MEMS heat dissipation device, the N-type diffusion well region and the P-type diffusion well region are both isosceles trapezoidal diffusion well regions, and the cross-sectional area of the isosceles trapezoidal diffusion well region gradually increases in the direction away from the first electrical connection layer and close to the second electrical connection layer.

[0012] As a preferred solution of the MEMS heat dissipation device, the refrigeration module is a two-stage refrigeration unit comprising a semiconductor refrigeration module, and the semiconductor refrigeration module comprises a first N-type sub-diffusion well region, a second N-type sub-diffusion well region, a third N-type sub-diffusion well region, a first P-type sub-diffusion well region, a second P-type sub-diffusion well region, a third P-type sub-diffusion well region, a first electrical connection layer, a second electrical connection layer and a third electrical connection layer.

[0013] The first electrical connection layer is formed with the first heat dissipation fin, and the same end of the first N-type sub-diffusion well region and the first P-type sub-diffusion well region is electrically connected to the first electrical connection layer and spaced apart.

[0014] The second electrical connection layer is formed on the second heat dissipation fin, the second electrical connection layer is formed with a first partition groove and a second partition groove, the first partition groove divides the second electrical connection layer into disconnected first, second and third electrical connection parts, the second N-type sub-diffusion well region is formed on the first electrical connection part, the third P-type sub-diffusion well region is formed on the third electrical connection part, and the second P-type sub-diffusion well region and the third N-type sub-diffusion well region are both formed on the second electrical connection part.

[0015] The third electric connection layer is formed on the second N-type sub-diffusion well region, the second P-type sub-diffusion well region, the third N-type sub-diffusion well region and the third P-type sub-diffusion well region, and a third partition groove is formed on the third electric connection layer, the third partition groove divides the third electric connection layer into an open fourth electric connection part and a fifth electric connection part, the first N-type sub-diffusion well region is formed on the fourth electric connection part, and the first P-type sub-diffusion well region is formed on the fifth electric connection part.

[0016] The fourth electric connection part, the first N-type sub-diffusion well region, the first electric connection layer, the first P-type sub-diffusion well region and the fifth electric connection part form a first series circuit, and the first electric connection part, the second N-type sub-diffusion well region, the fourth electric connection part, the second P-type sub-diffusion well region, the second electric connection part, the third N-type sub-diffusion well region, the fifth electric connection part, the third P-type sub-diffusion well region and the fifth electric connection part form a second series circuit, and the first series circuit and the second series circuit are arranged in parallel.

[0017] As a preferred scheme of the MEMS heat dissipation device, the first N-type sub-diffusion well region and the first P-type sub-diffusion well region are both rectangular parallelepiped diffusion well regions, the second N-type sub-diffusion well region, the third N-type sub-diffusion well region, the second P-type sub-diffusion well region and the third P-type sub-diffusion well region are all right trapezoidal diffusion well regions, and the slope of the second N-type sub-diffusion well region and the slope of the second P-type sub-diffusion well region are arranged in opposite directions, and the slope of the third N-type sub-diffusion well region and the slope of the third P-type sub-diffusion well region are arranged in opposite directions.

[0018] As a preferred scheme of the MEMS heat dissipation device, the refrigeration module further comprises a hot-end heat dissipation member arranged on the second heat dissipation fin, and a heat dissipation groove is formed on the surface of the hot-end heat dissipation member away from the second heat dissipation fin.

[0019] As a preferred scheme of the MEMS heat dissipation device, the movable member comprises a movable comb tooth and a movable block connected to each other, the MEMS heat dissipation device further comprises a first elastic beam and a second elastic beam, two ends of the first elastic beam are connected to the movable block and the stationary comb tooth respectively and can be elastically deformed in a preset direction, and two ends of the second elastic beam are connected to the base and the movable comb tooth respectively and can be elastically deformed in the preset direction.

[0020] As a preferred scheme of the MEMS heat dissipation device, the base comprises a silicon substrate layer and a bonding layer, the bonding layer is bonded on the silicon substrate layer, the air inlet is formed on the side surface of the silicon substrate layer, and the air outlet is formed at one end of the silicon substrate layer away from the airflow driving comb tooth.

[0021] As a preferred solution of the MEMS heat dissipation device, the air inlet is provided with a first one-way valve configured to prevent the gas in the containing cavity from being discharged outward through the air inlet.

[0022] The air outlet is provided with a second one-way valve configured to prevent the gas outside the base from flowing into the containing cavity through the air outlet.

[0023] An electronic device comprising the MEMS heat dissipation device and a component to be cooled.

[0024] The present application has the following advantages:

[0025] The first heat sink of the refrigeration module can absorb the heat of the component to be cooled, and when the moving part of the airflow driving comb moves, the gas flow rate in the containing cavity increases, thereby quickly taking away the heat of the second heat sink, reducing the temperature of the second heat sink, and ultimately facilitating the cooling of the first heat sink, so that the component to be cooled is quickly cooled.

[0026] The electronic device disclosed in the present application comprises the MEMS heat dissipation device and the component to be cooled, has a compact structure, high heat dissipation capacity and good heat dissipation uniformity, and is beneficial to the miniaturization design of the electronic device. BRIEF DESCRIPTION OF DRAWINGS

[0027] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed in the description of the embodiments of the present application will be briefly introduced. Obviously, the drawings in the following description are only some embodiments of the present application, and other drawings can be obtained by those skilled in the art without creative labor on the basis of the contents of the embodiments of the present application and the drawings.

[0028] Figure 1 is a schematic view of the MEMS heat dissipation device provided by the specific embodiments of the present application;

[0029] Figure 2 is a sectional view of the MEMS heat dissipation device provided by the specific embodiments of the present application;

[0030] Figure 3 is a sectional view of the refrigeration assembly and the component to be cooled of the MEMS heat dissipation device provided by the first other embodiment of the present application;

[0031] Figure 4is a sectional view of a refrigeration assembly and an element to be cooled of a MEMS heat dissipation device provided by a second other embodiment of the present application;

[0032] Figure 5 is a partial cross-sectional view of a gas inlet position of a MEMS heat dissipation device provided by a specific embodiment of the present application.

[0033] In the figure:

[0034] 1, base; 10, accommodating cavity; 101, gas inlet; 102, gas outlet; 11, silicon substrate layer; 111, first baffle; 112, first baffle plate; 113, second baffle plate; 12, bonding layer;

[0035] 201, first heat sink; 202, second heat sink; 203, first electrical connection layer; 204, second electrical connection layer; 20401, first partition groove; 20402, second partition groove; 2041, first electrical connection part; 2042, second electrical connection part; 2043, third electrical connection part; 205, third electrical connection layer; 2050, third partition groove; 2051, fourth electrical connection part; 2052, fifth electrical connection part; 206, hot end heat dissipation member; 2060, heat dissipation groove; 211, N-type diffusion well region; 212, P-type diffusion well region; 2201, first N-type sub-diffusion well region; 2202, second N-type sub-diffusion well region; 2203, third N-type sub-diffusion well region; 2204, first P-type sub-diffusion well region; 2205, second P-type sub-diffusion well region; 2206, third P-type sub-diffusion well region;

[0036] 3, airflow driving comb tooth; 31, static comb tooth; 32, dynamic comb tooth; 33, movable block;

[0037] 41, first elastic beam;

[0038] 100, element to be cooled. DETAILED DESCRIPTION

[0039] In order to make the technical problems solved by the present application, the technical solutions adopted and the technical effects achieved more clear, the technical solutions of the embodiments of the present application will be further described in detail below with reference to the drawings. Obviously, the described embodiments are only a part of the embodiments of the present application, not all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative labor fall within the scope of protection of the present application.

[0040] In the description of the present application, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer" and the like indicate the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as a limitation on the present application. In addition, the terms "first" and "second" are only for descriptive purposes and cannot be understood as indicating or implying relative importance. Among them, the terms "first position" and "second position" are two different positions.

[0041] In the description of the present application, it should be noted that unless otherwise explicitly specified and limited, the terms "mounting", "connecting", "connecting" should be understood in a broad sense, for example, it can be fixedly connected, or it can be detachably connected; it can be mechanically connected, or it can be electrically connected; it can be directly connected, or it can be indirectly connected through an intermediate medium; it can be the communication inside two elements. For those skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.

[0042] The embodiment provides a MEMS heat dissipation device for heat dissipation, as shown in Figure 1 and Figure 2 The device comprises a substrate 1, a refrigeration module and an airflow driving comb 3, the substrate 1 is formed with a containing cavity 10, an air inlet 101 and an air outlet 102, the air inlet 101 and the air outlet 102 are communicated with the containing cavity 10, the refrigeration module is formed on the substrate 1 and comprises a first heat dissipation fin 201 and a second heat dissipation fin 202, the first heat dissipation fin 201 and the second heat dissipation fin 202 are located at two ends of the refrigeration module along the thickness direction of the substrate 1, and the refrigeration module is configured to have a temperature of the first heat dissipation fin 201 lower than that of the second heat dissipation fin 202 when working, the first heat dissipation fin 201 can be in contact with a to-be-cooled element 100 and absorb heat of the to-be-cooled element 100 to cool the to-be-cooled element 100, the second heat dissipation fin 202 is located in the containing cavity 10, the airflow driving comb 3 is formed at one end of the containing cavity 10 and comprises a static comb 31 and a movable element, the movable element can drive airflow to flow into the containing cavity 10 from the air inlet 101, and the airflow flows out from the air outlet 102 after carrying away heat by flowing through the second heat dissipation fin 202.

[0043] The MEMS heat dissipation device provided by the embodiment can absorb heat of the element to be cooled 100, and the movement of the movable part can increase the gas flow rate in the containing cavity 10, so as to quickly take away the heat of the second heat dissipation fin 202, reduce the temperature of the second heat dissipation fin 202, and finally benefit the cooling of the first heat dissipation fin 201, so that the element to be cooled 100 is quickly cooled. Compared with the existing piezoelectric air cooling heat dissipation and manifold micro-channel heat dissipation, the MEMS heat dissipation device has the advantages of small size, strong heat dissipation capacity, good heat dissipation uniformity, and greatly improved heat dissipation efficiency, and has sufficient heat dissipation capacity while the equipment is miniaturized.

[0044] As shown in Figure 2 The refrigeration module of the embodiment further includes an N-type diffusion well region 211 and a P-type diffusion well region 212, the N-type diffusion well region 211 and the P-type diffusion well region 212 are arranged at intervals, the refrigeration module further includes a first electric connection layer 203 formed on the first heat dissipation fin 201 and a second electric connection layer 204 formed on the second heat dissipation fin 202, the same end of the N-type diffusion well region 211 and the P-type diffusion well region 212 are electrically connected through the first electric connection layer 203, and the other end of the N-type diffusion well region 211 and the P-type diffusion well region 212 are electrically connected through the second electric connection layer 204, the second electric connection layer 204, the N-type diffusion well region 211, the first electric connection layer 203 and the P-type diffusion well region 212 are sequentially electrically connected to form a series electric circuit. The N-type diffusion well region 211 and the P-type diffusion well region 212 of the embodiment are both rectangular parallelepiped diffusion well regions. The number of the N-type diffusion well region 211 and the P-type diffusion well region 212 included in the refrigeration module of the embodiment is several, and the several N-type diffusion well regions 211 and the several P-type diffusion well regions 212 are arranged in rows and columns at intervals.

[0045] Specifically, when an electric current in the direction of the second electric connection layer 204, the N-type diffusion well region 211, the first electric connection layer 203 and the P-type diffusion well region 212 is provided, free electrons enter the P-type diffusion well region 212 from the N-type diffusion well region 211, and the electrons jump from a low energy level to a high energy level, at this time, the electrons need to absorb heat, so that a cold surface is formed on the first heat dissipation fin 201 and a hot surface is formed on the second heat dissipation fin 202, that is, the temperature of the first heat dissipation fin 201 is reduced and the temperature of the second heat dissipation fin 202 is increased.

[0046] In other embodiments, as Figure 3As shown, the N-type diffusion well region 211 and the P-type diffusion well region 212 can also be isosceles trapezoidal diffusion well regions, and the cross-sectional area of the isosceles trapezoidal diffusion well region gradually increases in the direction away from the first electrical connection layer 203 and close to the second electrical connection layer 204. That is, at this time, the first fin 201 of the N-type diffusion well region 211 and the P-type diffusion well region 212 has a smaller area, and the second fin 202 has a larger area. The smaller contact area of the first fin 201 can obtain a higher current density under the same current, which helps the first fin 201 to absorb more heat, so that the first fin 201 absorbs more heat per unit area, improves the heat flux density of the first fin 201, and makes the refrigeration more concentrated and efficient; and the larger area of the second fin 202 means a larger contact area and a heat conduction path, which is beneficial to more evenly and quickly spread the heat outward through the second fin 202, avoiding heat accumulation.

[0047] It should be noted that in other embodiments of the present application, the refrigeration module can also be a two-stage refrigeration unit including at least one semiconductor refrigeration module, such as Figure 4 As shown, each semiconductor refrigeration module includes a first N-type sub-diffusion well region 2201, a second N-type sub-diffusion well region 2202, a third N-type sub-diffusion well region 2203, a first P-type sub-diffusion well region 2204, a second P-type sub-diffusion well region 2205, a third P-type sub-diffusion well region 2206, a first electrical connection layer 203, a second electrical connection layer 204, and a third electrical connection layer 205. The second fin 202 is formed on the first electrical connection layer 203, and the same end of the first N-type sub-diffusion well region 2201 and the first P-type sub-diffusion well region 2204 is electrically connected to the first electrical connection layer 203 and spaced apart. The second electrical connection layer 204 is formed on the first fin 201, and the second electrical connection layer 204 has a first partition groove 20401 and a second partition groove 20402. The first partition groove 20401 divides the second electrical connection layer 204 into disconnected first, second and third electrical connection parts 2041, 2042 and 2043. The second N-type sub-diffusion well region 2202 is formed on the first electrical connection part 2041, the third P-type sub-diffusion well region 2206 is formed on the third electrical connection part 2043, and the second P-type sub-diffusion well region 2205 and the third N-type sub-diffusion well region 2203 are both formed on the second electrical connection part 2042.

[0048] Specifically, as Figure 4As shown, a third electrical connection layer 205 is formed on the second N-type sub-diffusion well region 2202, the second P-type sub-diffusion well region 2205, the third N-type sub-diffusion well region 2203, and the third P-type sub-diffusion well region 2206. A third partition groove 2050 is formed on the third electrical connection layer 205, which divides the third electrical connection layer 205 into an open fourth electrical connection portion 2051 and a fifth electrical connection portion 2052. A first N-type sub-diffusion well region 2201 is formed on the fourth electrical connection portion 2051, and a first P-type sub-diffusion well region 2204 is formed on the fifth electrical connection portion 2052. The fourth electrical connection 2051, the first N-type sub-diffusion well region 2201, the first electrical connection layer 203, the first P-type sub-diffusion well region 2204, and the fifth electrical connection 2052 form a first series circuit. The first electrical connection 2041, the second N-type sub-diffusion well region 2202, the fourth electrical connection 2051, the second P-type sub-diffusion well region 2205, the second electrical connection 2042, the third N-type sub-diffusion well region 2203, the fifth electrical connection 2052, the third P-type sub-diffusion well region 2206, and the fifth electrical connection 2052 form a second series circuit. The first series circuit and the second series circuit are arranged in parallel.

[0049] Furthermore, such as Figure 4 As shown, the first electrical connection 2041, the second N-type sub-diffusion trap region 2202, the fourth electrical connection 2051, the second P-type sub-diffusion trap region 2205, the second electrical connection 2042, the third N-type sub-diffusion trap region 2203, the fifth electrical connection 2052, the third P-type sub-diffusion trap region 2206, and the third electrical connection 2043 are sequentially electrically connected to form a first-stage cooling system. The fourth electrical connection 2051, the first N-type sub-diffusion trap region 2201, the first electrical connection layer 203, the first P-type sub-diffusion trap region 2204, and the fifth electrical connection 2052 are sequentially electrically connected to form a second-stage cooling system. Compared with a structure with only a single-stage cooling system, the temperature on the first heat sink 201 is lower in this two-stage cooling unit. At the same time, this two-stage cooling unit can also achieve a higher cooling efficiency ratio and a larger cooling capacity, resulting in a better cooling effect.

[0050] Furthermore, Figure 4The first N-type sub-diffusion trap region 2201 and the first P-type sub-diffusion trap region 2204 are both cuboid diffusion trap regions, while the second N-type sub-diffusion trap region 2202, the third N-type sub-diffusion trap region 2203, the second P-type sub-diffusion trap region 2205 and the third P-type sub-diffusion trap region 2206 are all right-angled trapezoidal diffusion trap regions. The inclined surfaces of the second N-type sub-diffusion trap region 2202 and the second P-type sub-diffusion trap region 2205 are arranged opposite to each other, and the inclined surfaces of the third N-type sub-diffusion trap region 2203 and the third P-type sub-diffusion trap region 2206 are arranged opposite to each other. This structure can further help the first heat sink 201 absorb more heat, so that the first heat sink 201 absorbs more heat per unit area. It should be noted that the second N-type sub-diffusion well region 2202, the third N-type sub-diffusion well region 2203, the second P-type sub-diffusion well region 2205, and the third P-type sub-diffusion well region 2206 can all be cuboid diffusion well regions, and the specific selection is based on actual needs.

[0051] like Figure 2 As shown, the cooling module in this embodiment also includes a hot-end heat sink 206, which is disposed on the second heat sink 202. The hot-end heat sink 206 has multiple heat dissipation grooves 2060 formed on its surface away from the second heat sink 202. All heat dissipation grooves 2060 extend along a preset direction, resulting in multiple heat dissipation fins formed on the surface of the hot-end heat sink 206. The preset direction is the flow direction of gas within the accommodating cavity 10 from the air inlet 101 to the exhaust outlet 102. In other embodiments, the multiple heat dissipation grooves 2060 on the hot-end heat sink 206 can be arranged in rows and columns, with some grooves extending along the preset direction and the remaining grooves extending perpendicular to the preset direction; or, the cooling module may not include the hot-end heat sink 206, and the heat dissipation grooves 2060 may be directly formed on the second heat sink 202 to increase the heat dissipation area. The specific configuration depends on actual needs and is not limited here.

[0052] like Figure 2As shown, the movable component in this embodiment includes a movable comb tooth 32 and a movable block 33. The MEMS heat dissipation device also includes two first elastic beams 41 and two second elastic beams (not shown in the figure). Both the first elastic beams 41 and the second elastic beams are serpentine beams. Both ends of each first elastic beam 41 are connected to the movable block 33 and the stationary comb tooth 31, respectively, and can be stretched and deformed along a preset direction. The two first elastic beams 41 are located at both ends of the movable block 33 along the width direction. Both ends of each second elastic beam are connected to the base 1 and the movable comb tooth 32, respectively, and can be deformed along a preset direction. Both second elastic beams are connected to the end of the movable comb tooth 32 that is away from the movable block 33. It should be noted that in other embodiments of the present invention, the number of the first elastic beam 41 and the second elastic beam is not limited to two, but can be one or more. The shape of the first elastic beam 41 and the second elastic beam is not limited to a serpentine shape, but can be U-shaped or other shapes. The two ends of the first elastic beam 41 can be connected to the movable block 33 and the base 1 respectively, and the two ends of the second elastic beam can be connected to the stationary comb tooth 31 and the movable comb tooth 32 respectively. In other embodiments, the movable component can include only the movable comb tooth 32 and not the movable block 33. In this case, the movable comb tooth 32 can compress the gas in the receiving cavity 10, thereby increasing the airflow velocity in the receiving cavity 10. The specific configuration is determined according to actual needs.

[0053] like Figure 1 As shown, the substrate 1 in this embodiment includes a silicon substrate layer 11 and a bonding layer 12. The bonding layer 12 is bonded to the silicon substrate layer 11. There are two air inlets 101, which are symmetrically arranged on both sides of the silicon substrate layer 11. An exhaust port 102 is formed at the end of the silicon substrate layer 11 away from the airflow driving comb 3. In this embodiment, the bonding layer 12 is a Nyrex 7740 glass sheet, which is anoly bonded to the silicon substrate layer 11. In other embodiments, the bonding layer 12 can also be a silicon dioxide layer, a ceramic sheet, or other types of glass sheets, selected according to actual needs.

[0054] In other embodiments of the present invention, in order to enhance the heat dissipation effect, a plurality of staggered turbulence columns can be formed on the silicon substrate layer 11 or the bonding layer 12 and located in the cavity 10. The turbulence columns can disrupt the boundary layer and enhance the airflow mixing, thereby greatly enhancing the heat exchange efficiency and making the gas temperature region in the cavity 10 more uniform.

[0055] Specifically, in this embodiment, both the first heat sink 201 and the second heat sink 202 are formed by sputtering thermally conductive but non-conductive aluminum nitride. In other embodiments, the first heat sink 201 and the second heat sink 202 may also be diamond layers, depending on actual needs.

[0056] In this embodiment, the air inlet 101 is provided with a first one-way valve (not shown in the figure), which is configured to prevent gas in the accommodating cavity 10 from being discharged outward through the air inlet 101; the exhaust port 102 is provided with a second one-way valve (not shown in the figure), which is configured to prevent gas outside the substrate 1 from flowing into the accommodating cavity 10 through the exhaust port 102.

[0057] Specifically, the bonding layer 12 is provided with a first bump (not shown in the figure) facing the air inlet 101 and a second bump (not shown in the figure) facing the exhaust outlet 102. The silicon substrate layer 11 is provided with a first baffle 111 corresponding to the first bump and a second baffle (not shown in the figure) corresponding to the second bump. The first bump and the first baffle 111 are distributed sequentially along the air inlet direction, and the second bump and the second baffle are distributed sequentially along the exhaust direction. The first bump and the first baffle 111 form a first one-way valve, and the second bump and the second baffle form a second one-way valve. When the airflow drives the moving comb tooth 32 of the comb tooth 3 to squeeze the gas in the receiving cavity 10, the first one-way valve and the second one-way valve are both in the open state, that is, the first baffle 111 is separated from the first protrusion and the second baffle is separated from the second protrusion. The external gas enters the receiving cavity 10 through the air inlet 101 and is compressed, thereby achieving a rapid increase in flow rate. After cooling the second heat sink 202, the gas flows out from the exhaust port 102, ensuring that the gas with increased flow rate is discharged from the exhaust port 102 after cooling the second heat sink 202, rather than being discharged directly out through the air inlet 101.

[0058] Furthermore, such as Figure 5 As shown, in this embodiment, a first baffle plate 112 and a second baffle plate 113 are formed on the silicon substrate 11. The first baffle plate 112 has a rectangular cross-section, and the second baffle plate 113 has a hook-shaped cross-section. This structure can reduce dust entering the receiving cavity 10 and increase the cleanliness of the airflow. An air inlet 101 is formed in the area between the first baffle plate 112 and the second baffle plate 113. The first baffle plate 111 is located inside the air inlet 101 and is spaced apart from both the first baffle plate 112 and the second baffle plate 113. It should be noted that in other embodiments of the present invention, the structure of the first one-way valve and the second one-way valve is not limited to the above limitations. They can also be Tesla valves or other valve structures with one-way flow function. The shape of the air inlet 101 is also not limited to the above limitations. It can also be maze-shaped or other shapes, depending on actual needs. These will not be described in detail here.

[0059] This embodiment also provides an electronic device, including a heat dissipation element 100 and the MEMS heat dissipation device described in the above embodiment, wherein the heat dissipation element 100 is attached to the first heat sink 201.

[0060] The electronic device provided by the embodiment comprises the MEMS heat dissipation device and the element 100 to be cooled, has the advantages of compact structure, high heat dissipation capacity and good heat dissipation uniformity, and is beneficial to miniaturization design of the electronic device.

[0061] It should be noted that the above are only the preferred embodiments of the present application and the principles of the technology applied. Those skilled in the art will understand that the present application is not limited to the specific embodiments described herein, and those skilled in the art can make various obvious changes, readjustments and substitutions without departing from the scope of the present application. Therefore, although the present application has been described in more detail through the above embodiments, the present application is not limited to the above embodiments, and can include more other equivalent embodiments without departing from the concept of the present application, and the scope of the present application is determined by the scope of the appended claims.

Claims

1. A MEMS heat dissipation device, characterized in that, include: A substrate having a receiving cavity, an air inlet, and an exhaust outlet formed therein, wherein the air inlet and the exhaust outlet are both connected to the receiving cavity; A cooling module is formed on the substrate and includes a first heat sink and a second heat sink. The cooling module is configured such that when it is working, the temperature of the first heat sink is lower than the temperature of the second heat sink. The first heat sink can contact the component to be cooled and absorb heat. The second heat sink is located within the receiving cavity. The cooling module also includes a plurality of N-type diffusion well regions and a plurality of P-type diffusion well regions, which are arranged sequentially at intervals. The cooling module also includes a first electrical connection layer formed on the first heat sink and a second electrical connection layer formed on the second heat sink. The same end of the N-type diffusion well region and the P-type diffusion well region are electrically connected through the first electrical connection layer, and the other end of the N-type diffusion well region and the P-type diffusion well region are electrically connected through the second electrical connection layer. The second electrical connection layer, the N-type diffusion well region, the first electrical connection layer, and the P-type diffusion well region are sequentially electrically connected to form a series electrical circuit. Airflow-driven comb teeth are formed at one end of the receiving cavity and include stationary comb teeth and movable components. The movable components can drive airflow into the receiving cavity from the air inlet, flow through the second heat sink to remove heat, and then flow out from the exhaust port. The movable components include connected moving comb teeth and moving blocks. The MEMS heat dissipation device also includes a first elastic beam and a second elastic beam. The two ends of the first elastic beam are respectively connected to the moving block and the stationary comb teeth and can be extended and deformed in a preset direction. The two ends of the second elastic beam are respectively connected to the substrate and the moving comb teeth and can be deformed in the preset direction.

2. The MEMS heat dissipation device according to claim 1, characterized in that, Both the N-type diffusion well region and the P-type diffusion well region are isosceles trapezoidal diffusion well regions. Along the direction away from the first electrical connection layer and close to the second electrical connection layer, the cross-sectional area of ​​the isosceles trapezoidal diffusion well region gradually increases.

3. The MEMS heat dissipation device according to claim 1, characterized in that, The cooling module is a two-stage cooling unit including a semiconductor cooling module. The semiconductor cooling module includes a first N-type sub-diffusion well region, a second N-type sub-diffusion well region, a third N-type sub-diffusion well region, a first P-type sub-diffusion well region, a second P-type sub-diffusion well region, a third P-type sub-diffusion well region, a first electrical connection layer, a second electrical connection layer, and a third electrical connection layer. The first heat sink is formed on the first electrical connection layer. The same end of the first N-type sub-diffusion well region and the first P-type sub-diffusion well region are both electrically connected to the first electrical connection layer and are spaced apart from each other. The second electrical connection layer is formed on the second heat sink. A first partition groove and a second partition groove are formed on the second electrical connection layer. The first partition groove divides the second electrical connection layer into a disconnected first electrical connection portion, a second electrical connection portion and a third electrical connection portion. The second N-type sub-diffusion well region is formed on the first electrical connection portion. The third P-type sub-diffusion well region is formed on the third electrical connection portion. Both the second P-type sub-diffusion well region and the third N-type sub-diffusion well region are formed on the second electrical connection portion. The third electrical connection layer is formed on the second N-type sub-diffusion well region, the second P-type sub-diffusion well region, the third N-type sub-diffusion well region, and the third P-type sub-diffusion well region. A third partition groove is formed on the third electrical connection layer, which divides the third electrical connection layer into an open fourth electrical connection portion and a fifth electrical connection portion. The first N-type sub-diffusion well region is formed on the fourth electrical connection portion, and the first P-type sub-diffusion well region is formed on the fifth electrical connection portion. The fourth electrical connection portion, the first N-type sub-diffusion well region, the first electrical connection layer, the first P-type sub-diffusion well region, and the fifth electrical connection portion form a first series circuit. The first electrical connection portion, the second N-type sub-diffusion well region, the fourth electrical connection portion, the second P-type sub-diffusion well region, the second electrical connection portion, the third N-type sub-diffusion well region, the fifth electrical connection portion, the third P-type sub-diffusion well region, and the fifth electrical connection portion form a second series circuit. The first series circuit and the second series circuit are arranged in parallel.

4. The MEMS heat dissipation device according to claim 3, characterized in that, The first N-type sub-diffusion well region and the first P-type sub-diffusion well region are both cuboid diffusion well regions, and the second N-type sub-diffusion well region, the third N-type sub-diffusion well region, the second P-type sub-diffusion well region and the third P-type sub-diffusion well region are all right-angled trapezoidal diffusion well regions. The inclined surfaces of the second N-type sub-diffusion well region and the second P-type diffusion well region are arranged opposite to each other, and the inclined surfaces of the third N-type sub-diffusion well region and the third P-type diffusion well region are arranged opposite to each other.

5. The MEMS heat dissipation device according to claim 1, characterized in that, The cooling module also includes a hot-end heat sink component disposed on the second heat sink, and the hot-end heat sink component has a heat sink groove formed on the surface opposite to the second heat sink.

6. The MEMS heat dissipation device according to claim 1, characterized in that, The substrate includes a silicon substrate layer and a bonding layer, the bonding layer being bonded to the silicon substrate layer, the air inlet being formed on the side of the silicon substrate layer, and the exhaust port being formed at the end of the silicon substrate layer opposite to the airflow-driven comb teeth.

7. The MEMS heat dissipation device according to claim 1, characterized in that, The air inlet is provided with a first one-way valve, which is configured to prevent gas in the receiving cavity from being discharged outward through the air inlet; The exhaust port is provided with a second one-way valve, which is configured to prevent gas outside the substrate from flowing into the receiving cavity through the exhaust port.

8. An electronic device, characterized in that, It includes a heat-dissipating element and a MEMS heat dissipation device as described in any one of claims 1 to 7, wherein the heat-dissipating element is attached to a first heat sink of the MEMS heat dissipation device.

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