Optoelectronic device and system for optical data communication
By integrating µ-LEDs and micro-detectors into optoelectronic devices, the problems of high power consumption and radiation recombination lifetime in short-range data communication have been solved, enabling low-power, high-data-rate optical data transmission and improving the performance of optoelectronic components and the compactness of the system.
Patent Information
- Application Number
- CN202480031850.X
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Priority Date
- 2023-05-23
- Filing Date
- 2024-05-22
- Publication Date
- 2025-12-12
AI Technical Summary
In the prior art, the high power consumption of short-range data communication and the radiative recombination lifetime of µ-LEDs limit the performance improvement of optoelectronic components, especially in optical data transmission under low current operation and high data rate conditions.
By integrating optoelectronic devices, including µ-LEDs monolithically grown on semiconductor layers and adjacent micro-detectors, to form emitter and detector sections, compact arrangement of optoelectronic devices and efficient optical data communication are achieved by utilizing semiconductor layer stacking.
It achieves low-power, compact optoelectronic device arrangement, supports high-data-rate optical data communication, reduces system footprint, and improves the scalability and reliability of optoelectronic components.
Smart Images
Figure CN121128342A_ABST
Abstract
Description
[0001] This application claims priority to German patent application DE 10 2023 113 466.3, filed on May 23, 2023, the disclosure of which is incorporated herein by reference in its entirety.
[0002] This invention relates to optoelectronic devices, arrangements of optoelectronic devices, and systems for optical data communication. The invention also relates to methods for operating optoelectronic devices and for operating systems for optical data communication. Background Technology
[0003] The modern internet relies on large data centers. However, the high power consumption of these large data centers poses a challenge to ensuring they operate on purely sustainable energy sources. Much of the power consumption is not used for computation, but rather for data transmission over short distances (<< 10m): CPU to GPU, server to server, rack to rack.
[0004] Currently, short-range data communication is primarily conducted electrically via copper (Cu) or aluminum (Al) feed lines and wires (within the chip or motherboard), or optically via a combination of near-infrared (NIR) vertical-cavity surface-emitting lasers (VCSELs) and optical fibers. However, metals suffer from power loss due to their specific resistance, and on the other hand, VCSELs require a certain threshold current (I0). th This threshold current, typically in the mA range, is used to initiate laser emission. Along with the necessary forward voltage, this threshold current I... th The power dissipation (electrical) power is limited to a certain number of mW.
[0005] To reduce the power consumption of short-range optical data transmission, there is an ongoing effort to address the high power consumption challenge using micro-LEDs (µ-LEDs). Specifically, µ-LEDs have the advantage of operating at low currents (1 µA to 500 µA per pixel), many times lower than the operating current of lasers (such as VCSELs), and µ-LEDs do not require a (laser) threshold. Furthermore, µ-LEDs have a small footprint (potentially < 5 µm) and can be transferred to backplane wafers using common display technologies, allowing for high parallelism during transfer and further reducing power consumption during hardware manufacturing.
[0006] Therefore, compared to technologies such as VCSELs, the use of small optoelectronic components such as µ-LEDs for optical data communication has major advantages, particularly for energy saving in data transmission over short and medium distances, due to better scalability and lower current operation.
[0007] However, using small optoelectronic components such as µ-LEDs requires not only high quantum efficiency but also very fast "switchability" of the emitter to allow for high data rates. One related limitation is the radiative recombination lifetime, which restricts the rise and fall times of light emission when the µ-LED is modulated or turned on / off. This effect is particularly pronounced when using µ-LEDs due to their large surface area to volume ratio.
[0008] Known methods for reducing radiative recombination lifetime include, for example, background doping (e.g. in a QW barrier) to increase the charge carrier density of certain charge carrier types, using quantum dots, and / or attempting to achieve high current densities.
[0009] However, these methods can only improve the performance of optoelectronic components to a certain extent.
[0010] Therefore, the purpose of this application is to provide an optoelectronic component that overcomes at least some of the aforementioned disadvantages, as well as a system for optical data communication. Summary of the Invention
[0011] This objective and other objectives are addressed by the subject matter of the independent claim. Features and additional aspects of the proposed principle are outlined in the dependent and supplementary claims.
[0012] The core of this invention is to provide an optoelectronic device and a system using such an optoelectronic device, by means of which data for optical data communication can be transmitted back and forth within a single optical fiber. This can be achieved by using an integrated optoelectronic device comprising a µ-LED monolithically grown on a first portion of a semiconductor layer, and a miniature detector (µ-detector) disposed on, above, or below a second portion of the same semiconductor layer adjacent to the first portion. Thus, the second portion acts as a placeholder for later placement of the µ-detector on, above, or below the second portion of the semiconductor layer. Depending on the operating mode, the optoelectronic device can be used as a transmitter and / or detector, thereby allowing for “universal” use of the optoelectronic device. This reduces the space required for such a system.
[0013] The basic concept is to provide an integrated optoelectronic device with an emitter portion and a detector portion, wherein the emitter portion is monolithically grown as a stack of semiconductor layers, and the detector portion is provided at least at the wafer level, i.e., in the form of a connection surface or in the form of a window formed by one of the semiconductor layers in the semiconductor layer stack. Thus, the individual detector can then be precisely placed in its intended location, forming a combined and integrated µ-LED and µ-detector together with the semiconductor layer stack.
[0014] In a first aspect, an optoelectronic device is provided, particularly a combined µ-LED and µ-detector. The optoelectronic device includes a continuous first semiconductor layer having a first portion and a laterally shifted second portion, a second semiconductor layer disposed on the first portion, and an active region disposed between the first portion and the second semiconductor layer. The optoelectronic device also includes a top contact element disposed on the second semiconductor layer and a bottom contact element electrically coupled to the first portion. Thus, the first and second semiconductor layers include doping of different conductivity types, and the first portion, the active region, and the second semiconductor layer form a semiconductor layer stack configured to emit light of at least a first wavelength when a supply voltage is applied to the top and bottom contact elements. Therefore, the semiconductor layer stack of the first portion, the active region, and the second semiconductor layer forms the emitter portion of the optoelectronic device. On the other hand, the second portion is configured to accommodate a separate detector element and / or be substantially transparent to light of the first or second wavelength to be detected, so as to transmit light of the first or second wavelength to the detector element disposed below the second portion. Therefore, the second portion, together with the separate detector element, forms the detector portion of the optoelectronic device.
[0015] In some respects, optoelectronic devices are combinations of µ-LEDs and µ-detectors. Such combinations of µ-LEDs and µ-detectors can be particularly devices with edge lengths of less than 100 µm, less than 50 µm, less than 20 µm, less than 10 µm, or less than 5 µm, configured to emit and detect light of a desired wavelength.
[0016] The semiconductor layer stack can be of any shape, such as a truncated pyramid shape or a truncated cylinder shape with angled side surfaces. Such angled side surfaces can be produced, for example, by a mesa etching process. However, these exemplary embodiments should not be construed as limiting, but only as possible embodiments. Any other arrangement, shape, and cross-section are also possible.
[0017] In some aspects, the second layer and the active region are removed to form a second portion of the first semiconductor layer. Furthermore, the second portion has no active region and the second semiconductor layer / is not covered by an active region and the second semiconductor layer. For example, the first semiconductor layer, the second semiconductor layer, and the active region between the first and second semiconductor layers can be grown over a large area and then removed again in the area forming the first and second portions. However, it is also conceivable that the second semiconductor layer and the active region are grown only on the first portion of the first semiconductor layer and not on the second portion.
[0018] In some aspects, the optoelectronic device also includes a detector element disposed on the second portion, and particularly disposed on a protrusion forming the second portion in the first semiconductor layer. The second portion specifically includes a protrusion in the first semiconductor layer, on which the detector element, such as a photodetector, is disposed. Gaps or recesses may be formed in the first semiconductor layer between the layer stack and the protrusion, thus the first and second portions, as well as the emitter portion and the detector portion, are spaced apart from each other.
[0019] In some respects, a short-period superlattice (SPSL) layer is disposed between the first semiconductor layer and the active region, and / or between the first semiconductor layer and the detector element, or as part of the detector element. Such a layer can reduce the tension between the first semiconductor layer and adjacent layers / components.
[0020] In some aspects, optoelectronic devices also include a carrier substrate, particularly a CMOS backplane. The carrier substrate is disposed above a first semiconductor layer or on top of a second semiconductor layer and is electrically coupled to top contact elements and / or bottom contact elements. The carrier substrate may, for example, include supply circuitry electrically contacting the top and / or bottom contact elements and detector elements. The carrier substrate may be, for example, in the form of a CMOS element or part of a CMOS wafer.
[0021] In some aspects, the carrier substrate is bonded to an extension of the bottom contact element and / or the top contact element, or directly bonded to either the bottom or top contact element. However, the carrier substrate can also be stacked with the first semiconductor layer and other semiconductor layers, and monolithically integrated with the contact element. It is also conceivable that the optoelectronic device does not include a carrier substrate and is placed on a corresponding carrier substrate at a later stage.
[0022] In some aspects, the detector element is disposed adjacent to the second portion on the carrier substrate, such that the detector element is disposed between the carrier substrate and the second portion. In this case, the second portion is specifically configured as a window or opening, which is configured to transmit light of at least a first wavelength or a second wavelength incident on the second portion to the detector element below the second portion.
[0023] In some aspects, the detector element is configured to detect light of a first wavelength or a second wavelength incident on the detector element. The detector element can be, for example, a high-speed detector, a photodiode, an avalanche photodiode (APD), or a metal-semiconductor-metal (MSM) photodetector. The detector element, together with a second portion of the first semiconductor layer, forms the detector portion of the optoelectronic device.
[0024] In some aspects, the optoelectronic device also includes a contact via through a second portion of the first semiconductor layer for providing contact elements for electrical contact with detector elements disposed on the second portion. Thus, the detector elements can be electrically contacted from the other side of the first semiconductor layer (i.e., the side away from where the detector elements are pointing) by means of the contact via.
[0025] At least one of the top or bottom contact elements may be substantially transparent to light of a first wavelength, for example. In particular, the top or bottom contact element may form the light-emitting region of the optoelectronic device through which light generated in the active region is coupled out of the optoelectronic device. Such a substantially transparent contact element may be formed, for example, of a transparent conductive oxide (TCO) such as indium tin oxide (ITO). The light-emitting region may be formed by the top or bottom contact element itself or by other structures / elements as described later herein.
[0026] In some aspects, the other contact element, which is not substantially transparent, between the top and bottom contact elements may include a reflective material layer covering the bottom layer of the first and second semiconductor layers. In the case of the top contact element, the reflective material layer may cover the second semiconductor layer opposite the active region, or in the case of the bottom contact element, the reflective material layer may cover a first portion of the semiconductor layer opposite the active region. This allows for directional radiation of the generated light in the direction of the light-emitting region, and more efficient coupling of the generated light through the light-emitting region.
[0027] In some respects, at least the first semiconductor layer in the second portion is substantially transparent to light of the first wavelength. The second portion may specifically form a window / light incident region of the optoelectronic device for detection of light incident on the second portion by the underlying detector element. However, the second portion may also include an opening through the first semiconductor layer, which may optionally be filled with a filler material that is particularly transparent. In such a case, the opening or optional filler material may form a light incident region of the optoelectronic device for detection of light incident on the second portion by the underlying detector element.
[0028] In some aspects, the optoelectronic device also includes an optical barrier disposed on a first semiconductor layer between the first portion and the second portion, wherein the optical barrier prevents light of at least a first wavelength from directly incident on the detector element from the active region. Therefore, the optical barrier may, for example, reflect or absorb light of the first wavelength, and may have a height such that it extends beyond the semiconductor layer stack from the first semiconductor layer or includes at least an equal height.
[0029] In some aspects, the optoelectronic device also includes a coupling structure on a top contact element and / or a second semiconductor layer opposite to the first semiconductor layer, or a coupling structure on a bottom contact element and / or a first semiconductor layer opposite to the second semiconductor layer. The coupling structure, for example, forms the light-emitting region of the optoelectronic device. The coupling structure may, for example, be a surface roughening of the top or bottom contact element. In this way, the coupling of light out of the optoelectronic device can be improved, and the directionality of the coupled light can be improved. Additionally, this can improve the coupling of light into adjacent optical fibers.
[0030] In some aspects, the optoelectronic device also includes optical elements on a top contact element and / or a second semiconductor layer opposite to the first semiconductor layer, or on a bottom contact element and / or a first semiconductor layer opposite to the second semiconductor layer. The optical elements can be, for example, microlenses (µ-lenses) or photonic structures. In this way, the coupling of light out of the optoelectronic device can be improved, as can the directionality of the coupled light. Additionally, this can improve the coupling of light into adjacent optical fibers.
[0031] In some aspects, optoelectronic devices include multiple emitter sections and detector sections, wherein each emitter section includes a second layer and a portion of an active region. The emitter sections may be spaced apart from each other, for example, by gaps. Thus, redundancy between emitters can be achieved in the event of a failure of one or more emitter sections.
[0032] In some aspects, the optoelectronic devices(s) according to the proposed principles can be processed as individual elements capable of being transferred or mounted onto a carrier substrate, for example. However, in other aspects, the optoelectronic devices according to the proposed principles can also be processed as being arranged adjacently on a carrier substrate to form an array / multiple optoelectronic devices.
[0033] Therefore, in another aspect, an arrangement is provided comprising a carrier substrate and a plurality of optoelectronic devices arranged adjacent to each other on a common carrier substrate according to some aspects of the proposed principles. In some aspects, the optoelectronic devices are thus arranged in an array in the form of rows and columns.
[0034] As described above, integrating the emitter and detector into a combined optoelectronic device allows for the fabrication of compact and well-aligned arrangements of the optoelectronic devices. Furthermore, very short connections to a carrier substrate, such as a CMOS driver, can be achieved through the use of through-holes for vertical stacking.
[0035] On the other hand, a system for optical data communication is provided, comprising a first arrangement of optoelectronic devices and a second arrangement of optoelectronic devices. Thus, the optoelectronic devices of the first arrangement are optically coupled to corresponding optoelectronic devices of the second arrangement to transmit optical data. Therefore, each optoelectronic device of the first and second arrangements includes a transmitter portion and a detector portion, such that a single piece of optical data can be transmitted back and forth between the two arrangements via one optoelectronic device. Therefore, at least one of the first and second arrangements is an arrangement according to some of the aspects mentioned above.
[0036] In some aspects, the optoelectronic devices of the first arrangement are configured to emit light of a first wavelength, and the optoelectronic devices of the second arrangement are configured to detect light of the first wavelength emitted by the corresponding optoelectronic devices of the first arrangement. Therefore, the first arrangement is configured to transmit optical data, and the second arrangement is configured to detect optical data. Furthermore, the optoelectronic devices of the second arrangement are configured to emit light of a second wavelength, and the optoelectronic devices of the first arrangement are configured to detect light of the second wavelength emitted by the corresponding optoelectronic devices of the second arrangement. Therefore, the second arrangement is also configured to transmit optical data, and the first arrangement is also configured to detect optical data. Thus, for optical data communication, only one arrangement needs to be configured to transmit and detect optical data on each side of the communication object, and communication between the communication objects can be achieved by transmitting and transmitting data at different times, or by simultaneously transmitting and detecting data using different wavelengths when the first and second wavelengths are different. Therefore, the optoelectronic devices of the first arrangement are, for example, configured to emit light of the first wavelength at a first time point, and the optoelectronic devices of the second arrangement are configured to detect light of the first wavelength emitted by the corresponding optoelectronic devices of the first arrangement at the first time point. Furthermore, the second arrangement of photoelectric devices is configured to emit light of a second wavelength at a second time point, and the first arrangement of photoelectric devices is configured to detect the light of the second wavelength emitted by the corresponding photoelectric device of the second arrangement at the second time point. However, it is also possible to transmit and detect light in both directions simultaneously using different wavelengths.
[0037] In some respects, the first wavelength and the second wavelength are substantially the same, and therefore the first arrangement and the second arrangement comprise substantially the same optoelectronic devices. However, in some respects, the first wavelength and the second wavelength are different from each other. In the latter case, a first wavelength filter may be arranged above each detector portion of the optoelectronic device in the first arrangement, and a second wavelength filter may be arranged above each detector portion of the optoelectronic device in the second arrangement. The first wavelength filter may therefore be configured to transmit light of the second wavelength but block light of the first wavelength, and the second wavelength filter may therefore be configured to transmit light of the first wavelength but block light of the second wavelength.
[0038] On the other hand, a method is provided for operating a system based on some aspects of the proposed principles. This method includes the following steps:
[0039] The first optoelectronic device in the first arrangement emits light of the first wavelength;
[0040] The light of the first wavelength is coupled into the first optical fiber;
[0041] The light of the first wavelength is transmitted to the corresponding first optoelectronic device arranged in the second position;
[0042] Couple the light of the first wavelength into the first optoelectronic device arranged in the second configuration; and
[0043] The first wavelength of light is detected by means of the first optoelectronic device arranged in the second configuration.
[0044] In some respects, the method also includes the following steps:
[0045] The second wavelength of light is emitted by means of the first optoelectronic device arranged in the second configuration;
[0046] The second wavelength of light is coupled into the first optical fiber;
[0047] The second wavelength of light is transmitted to the first optoelectronic device arranged in the first position;
[0048] Couple the second wavelength of light into the first optoelectronic device arranged in the first configuration; and
[0049] The second wavelength of light is detected by means of a first optoelectronic device arranged in the first position. Attached Figure Description
[0050] Further aspects and implementations based on the proposed principles will become apparent with respect to the various embodiments and examples described in detail with reference to the accompanying drawings, in which:
[0051] Figure 1A and Figure 1B Each shows a side view of an embodiment of an optoelectronic device based on some aspects of the proposed principles;
[0052] Figure 2A and Figure 2B Each shows a side view of yet another embodiment of an optoelectronic device based on some aspects of the proposed principles;
[0053] Figure 3A and Figure 3B Each shows a side view of yet another embodiment of an optoelectronic device based on some aspects of the proposed principles;
[0054] Figure 4 A top view of yet another embodiment of an optoelectronic device based on some aspects of the proposed principles is shown;
[0055] Figure 5 A side view of an embodiment of a photoelectric arrangement based on some aspects of the proposed principles is shown;
[0056] Figure 6 Implementations of a system for optical data communication based on some aspects of the proposed principles are shown; and
[0057] Figure 7 Another implementation of a system for optical data communication based on some aspects of the proposed principles is shown. Detailed Implementation
[0058] The following embodiments and examples disclose various aspects and combinations thereof based on the proposed principles. The embodiments and examples are not always drawn to scale. Similarly, different elements may be enlarged or reduced in size to emphasize various aspects. It goes without saying that the various aspects of the embodiments and examples shown in the drawings can be combined with each other without contradicting the principles of the invention. Some aspects illustrate regular structures or forms. It should be noted that in practice, minor differences and deviations from the ideal form may occur; however, these do not contradict the inventive concept.
[0059] Furthermore, the various figures and aspects are not necessarily shown at the correct dimensions, and the proportions between the elements are not necessarily substantially correct. Some aspects are highlighted by showing them enlarged. However, terms such as "above," "above," "below," "below," "larger," and "smaller" are correctly represented regarding the elements in the figures. Therefore, such relationships between elements can be inferred from the figures.
[0060] Figure 1A A first embodiment of an optoelectronic device 1 based on some aspects of the proposed principles is shown. The optoelectronic device 1 includes a first semiconductor layer 3a having a first portion 7a separated by a small gap 11 and a laterally shifted second portion 7b. A second semiconductor layer 3b and an active region 4 between the first portion 7a and the second semiconductor layer 3b are arranged on the first portion 7a to form a semiconductor layer stack 2. The first semiconductor layer 3a and the second semiconductor layer 3b are doped with different conductivity types, such that, with the active region 4 and a top contact element 8 arranged on the second semiconductor layer 3b and a bottom contact element 6 electrically coupled to the first portion 7a, the semiconductor layer stack 2 is configured to emit light of at least a first wavelength when a supply voltage is applied to the top contact element 8 and the bottom contact element 6.
[0061] Additionally, the second portion 7b is configured to house a detector element 5, which is disposed on a protrusion forming the second portion 7b in the first semiconductor layer 3a. The detector element and the semiconductor layer stack 2 are electrically connected to a carrier substrate 13 in the form of a CMOS backplane via a bottom contact element 6 and contact pads 15 disposed opposite the second portion 7b on the first semiconductor layer 3a. A top contact element 8 can be connected to the backplane, for example, via contact vias through the first semiconductor layer 3a or via interconnects extending from the top contact element 8 to the carrier substrate 13. Furthermore, the optoelectronic device 1 may include contact vias (not shown) through the second portion 7b for providing electrical connection between the contact pads 15 and the detector element 5. With the aid of the carrier substrate 13, the emitter portion 9 and the detector portion 10 can be controlled, and thus the optoelectronic device 1 can be controlled.
[0062] During the epitaxial growth of the semiconductor layer stack 2, a second portion 7b of the first semiconductor layer 3a can be specifically provided so that a detector element 5 can be arranged on the second portion 7b as an integrated part of the optoelectronic device 1 later. Thus, a very complex yet space-saving integrated component can be provided, which can be used, for example, as an optoelectronic device 1 for data communication.
[0063] Figure 1B An embodiment of the optoelectronic device 1 is shown, wherein... Figure 1A Compared to the embodiment shown, the carrier substrate 13 is arranged on the opposite side of the detector element 5 and the semiconductor layer stack 2. In this case, the carrier substrate 13 is directly bonded to the extensions of the top contact element 8 and the bottom contact element 6, and to the contact pads 15 directly disposed on the detector element 5. In order to allow light generated within the semiconductor layer stack 2 to be emitted from the optoelectronic device 1, the first semiconductor layer 3a, and particularly the first portion 7a, needs to be substantially transparent to light generated within the semiconductor layer stack 2. The same applies to the detector portion 10. Therefore, the first semiconductor layer 3a, and particularly the second portion 7b, needs to be substantially transparent to light to be detected by the detector element 5.
[0064] Figure 2A and Figure 2B Each illustrates an embodiment of the optoelectronic device 1, wherein... Figure 1A and Figure 1B Compared to the embodiment shown, the detector element is not disposed on the first semiconductor layer 3a, but rather disposed on or integrated into the carrier substrate 13. In this case, the second portion 7b of the first semiconductor layer 3a serves as a substantially transparent window or opening 12 for the detector element 5, disposed above the detector element 5, wherein the detector element 5 is disposed between the second portion 7b and the carrier substrate 13.
[0065] exist Figure 2A In this embodiment, the second portion 7b of the first semiconductor layer 3a includes an opening 12 through which light is incident on the detector element 5 to be detected. Therefore, the first semiconductor layer 3a can have the opening 12 at the wafer level, and the detector element 5 can be positioned in or below the opening at a later time. The opening 12 can then be filled with a transparent filler material or filled at the wafer level.
[0066] On the other hand, Figure 2B The second portion includes a transparent window formed of the material of the first semiconductor layer 3a, which is substantially transparent to light to be detected by the detector element 5. To maintain an appropriate distance between the second portion 7b and the detector element 5 and to improve the light detection efficiency of the optoelectronic device 1, an optical barrier 17 is arranged between the semiconductor layer stack 2 and the detector element 5, the optical barrier 17 surrounding the detector element 5 in a circumferential direction. The optical barrier 17 is attached to the first semiconductor layer 3a and the carrier substrate 13, and is specifically arranged between the first portion 7a and the second portion 7b to provide direct emission of light from the semiconductor layer stack 2 to the detector element 5.
[0067] Apart from Figure 1A and Figure 1B In addition to the embodiments shown, Figure 3A and Figure 3B The illustrated embodiment also includes a short-period superlattice (SPSL) layer 16 disposed between the first semiconductor layer 3a and the active region 4, and between the first semiconductor layer 3a and the detector element 5. This layer reduces epitaxial strain between the first semiconductor layer and adjacent layers / components. Furthermore, the detector element 5 is formed as a lateral detector, such as a metal-insulator-semiconductor (MIS) lateral detector. Thus, the detector element 5 can be manufactured using a simplified fabrication process because the semiconductor layer is already in place, and the growth of the contact pads for the electrical contact detector element can be performed concurrently with one of the steps required to grow the contact elements of the emitter portion. The SPSL can be, for example, based on a Ga(In)N / InGaN layer with an indium content, for example, <20% by atomic number, a period, for example, from 2 nm to 10 nm, and a total thickness, for example, from 20 nm to 500 nm.
[0068] Figure 4An exemplary top view of an embodiment of the optoelectronic device 1 is shown. The optoelectronic device 1 includes: four emitter portions 9 in one "corner" of the optoelectronic device 1, each emitter portion being separated by a gap 11; and a detector portion 10 extending along each opposite side of the "corner" of the optoelectronic device 1. Thus, redundancy can be achieved between the emitter portions 9 in the event of failure of one or more emitter portions. However, the number, design, and arrangement of the emitter portions 9 shown are to be understood as merely an example and are subject to change.
[0069] For example, the area ratio between the emitter portion and the detector portion of an optoelectronic device can be in the following range: detector (D) to emitter (E) = (100x100 / 1x1) = 10000, as low as D / E = (20x20 / 2x2) = 100, or even as low as D / E = 10 (as a lower limit), while the numbers (YxY / ZxZ) give exemplary values for the surface area size of the emitter portion and the detector portion in µm.
[0070] Figure 5 An arrangement 20 based on some aspects of the proposed principles is shown. This arrangement includes a plurality of [unclear text - possibly a number] arranged adjacent to each other on a common carrier substrate 13. Figure 1A The illustrated optoelectronic device 1. In the illustrated embodiment, two exemplary optoelectronic devices 1 are arranged on a common carrier substrate; however, the number 2 is only to be understood as exemplary. For example, multiple optoelectronic devices 1 can be arranged in an array in rows and columns on the common carrier substrate 13. Therefore, the common carrier substrate can be, for example, a CMOS wafer, providing the necessary supply circuitry for operating the optoelectronic devices 1.
[0071] An exemplary method for manufacturing such an arrangement 20 may include, for example, the following steps:
[0072] Set bottom contact element 6;
[0073] A first semiconductor layer 3a is provided;
[0074] Set active region 4;
[0075] A second semiconductor layer 3b is provided;
[0076] The semiconductor layers are stacked to form an acceptor portion 9 / first portion 7a and a detector portion 10 / second portion 7b;
[0077] A top contact element 8 is disposed on the second semiconductor layer 3b;
[0078] A detector element is disposed on the second part 7b;
[0079] The carrier substrate is bonded to the bottom contact element 6.
[0080] However, the steps mentioned above are to be understood as exemplary and their order may be changed, and / or some steps may be omitted or are optional.
[0081] Figure 6 A first embodiment of a system 30 for optical data communication based on some aspects of the proposed principles is shown. System 30 includes a first arrangement 20a of optoelectronic devices 1, a second arrangement 20b of optoelectronic devices 1, and a multi-core optical fiber optically coupling the first and second arrangements. The optoelectronic devices 1 of the first arrangement 20a are optically coupled to corresponding optoelectronic devices 1 of the second arrangement 20b via optical fiber 31 of the multi-core optical fiber. Since the optoelectronic devices are configured to emit and detect light of desired wavelengths, only one arrangement of optoelectronic devices is required on each side of the communication object, and round-trip communication can be provided by system 30.
[0082] Figure 7 Another view of a system 30 for optical data communication, based on some aspects of the proposed principles, is shown. In system 30, optoelectronic devices 1 are arranged together on a carrier substrate 13, each optoelectronic device including a transmitter portion 9 and a detector portion 10. Each optoelectronic device is optically coupled to only one optical fiber 31. Above each of the detector portions 10 of the optoelectronic devices 1, a wavelength filter 14 is arranged to at least transmit light emitted by the transmitter portion 9 of the corresponding optoelectronic device 1 arranged opposite to it. Thus, it can be ensured that only light of the corresponding wavelength is transmitted to the detector element of the corresponding optoelectronic device.
[0083] List of reference numerals
[0084] 1 Optoelectronic devices
[0085] 2. Semiconductor layer stacking
[0086] 3a, 3b Semiconductor layers
[0087] 4. Active region
[0088] 5. Detector Components
[0089] 6 Bottom contact element
[0090] Parts 7a and 7b
[0091] 8 Top contact element
[0092] 9. Transmitter Section
[0093] 10. Detector Section
[0094] 11 gaps
[0095] 12 Openings
[0096] 13. Carrier substrate
[0097] 14 Filters
[0098] 15 Contact pads
[0099] 16 SPSL layers
[0100] 17 Optical Barrier
[0101] Arrangements 20, 20a, and 20b
[0102] 30 System
[0103] 31 optical fibers
Claims
1. An optoelectronic device (1), in particular a combined micro-LED and micro-detector, comprising: a continuous first semiconductor layer (3a) having a first portion (7a) and a laterally displaced second portion (7b); a second semiconductor layer (3b) arranged on the first portion (7a); an active region (4) arranged between the first portion (7a) and the second semiconductor layer (3b); a top contact element (8) arranged on the second semiconductor layer (3b); and a bottom contact element (6) electrically coupled to the first portion (7a); wherein the first semiconductor layer (3a) and the second semiconductor layer (3b) comprise a doping of different conductivity types; wherein the first portion (7a), the active region (4) and the second semiconductor layer (3b) form a semiconductor layer stack (2) configured to emit light of at least a first wavelength when a supply voltage is applied to the top contact element (8) and the bottom contact element (6); and wherein the second portion (7b) is configured to accommodate a separate detector element (5) and / or is substantially transparent to light of the first wavelength. the second layer (3b) and the active region (4) above the second portion (7b) are removed.
2. The optoelectronic device of claim 1, wherein, 3. The optoelectronic device according to claim 1 or 2, further comprising a detector element (5) arranged on the second portion (7b) and in particular on a protrusion of the first semiconductor layer (3a) forming the second portion (7b). a SPSL layer (16) is arranged between the first semiconductor layer (3a) and the active region (4) and / or between the first semiconductor layer (3a) and the detector element (5) or is part of the detector element (5).
4. The optoelectronic device of any of claims 1 to 3, wherein, the carrier substrate (13) is electrically coupled to the top contact element (8) and / or the bottom contact element (6).
5. The optoelectronic device according to any one of claims 1 to 4, further comprising a carrier substrate (13), in particular a CMOS backplane, wherein a detector element (5) is arranged on the carrier substrate (13) adjacent to the second portion (7b), in particular between the carrier substrate (13) and the second portion (7b).
6. The optoelectronic device of claim 5, wherein, the top contact element (8) or the bottom contact element (6) is substantially transparent to light of the first wavelength.
7. The optoelectronic device of any one of claims 1 to 6, wherein, the first semiconductor layer (3a) is substantially transparent to light of the first wavelength.
8. The optoelectronic device of any one of claims 1 to 7, wherein, the second portion (7b) comprises an opening through the first semiconductor layer (3a), which opening is optionally filled with a filling material (14) which is in particular transparent.
9. The optoelectronic device of any one of claims 1 to 8, wherein, the optical barrier (17) prevents light of the first wavelength from directly being emitted from the semiconductor layer stack (2) towards the detector element (5).
10. The optoelectronic device according to any one of claims 1 to 8, further comprising an optical barrier (17) arranged on the first semiconductor layer (3a) between the first portion (7a) and the second portion (7b), wherein, 11. The optoelectronic device according to any of claims 1 to 10, further comprising a coupling-out structure on the semiconductor layer stack (2). 12. The optoelectronic device according to any one of claims 1 to 11, further comprising an optical element, in particular a micro-lens or a photonic structure, on the semiconductor layer stack (2).
13. The optoelectronic device of any one of claims 1 to 12, wherein, The carrier substrate (13) comprises supply circuitry in electrical contact with the top contact element (8) and the bottom contact element (6), and in particular in electrical contact with the detector element (5).
14. The optoelectronic device according to any one of claims 1 to 13, further comprising a contact via through the second portion (7b) for providing a contact element for electrically contacting a detector element (5) arranged on the second portion (7b).
15. The optoelectronic device of any one of claims 1 to 14, wherein, The detector element (5) is configured to detect light of the first wavelength, and in particular is a high-speed detector.
16. An arrangement (20) comprising a plurality of optoelectronic devices (1) according to any one of claims 1 to 15, the plurality of optoelectronic devices (1) being arranged adjacent to each other on a common carrier substrate (13).
17. The arrangement of claim 16, wherein, The optoelectronic devices (1) are arranged in an array in the form of rows and columns.
18. The arrangement according to claim 16 or 17, wherein, The optoelectronic devices (1) are optically isolated from each other.
19. A system (30) for optical data communication, the system (30) comprising a first arrangement (20a) of optoelectronic devices (1) and a second arrangement (20b) of optoelectronic devices (1), wherein, The optoelectronic devices (1) of the first arrangement (20a) are optically coupled with the respective optoelectronic devices (1) of the second arrangement (20b), wherein each optoelectronic device (1) of the first and second arrangements (20b) comprises a transmitter portion and a detector portion, and wherein at least one of the first arrangement (20a) and the second arrangement (20b) is an arrangement according to any one of claims 16 to 18.
20. The system of claim 19, wherein, The optoelectronic devices (1) of the first arrangement (20a) are configured to emit light of a first wavelength, and wherein the optoelectronic devices (1) of the second arrangement (20b) are configured to detect light of the first wavelength emitted by the respective optoelectronic devices (1) of the first arrangement (20a), and wherein the optoelectronic devices (1) of the second arrangement (20a) are configured to emit light of a second wavelength, and wherein the optoelectronic devices (1) of the first arrangement (20b) are configured to detect light of the second wavelength emitted by the respective optoelectronic devices (1) of the second arrangement (20a).
21. The system of claim 20, wherein, The first wavelength and the second wavelength are different from each other.
22. The system of claim 21, wherein, A first wavelength filter (14) is arranged above each detector portion (10) of the optoelectronic devices (1) of the first arrangement (20a), and wherein a second wavelength filter (14) is arranged above each detector portion (10) of the optoelectronic devices (1) of the second arrangement (20b), and wherein the first wavelength filter (14) is configured to transmit light of the second wavelength but block light of the first wavelength, and wherein the second wavelength filter (14) is configured to transmit light of the first wavelength but block light of the second wavelength.
23. A method for operating a system (30) according to any one of claims 19 to 22, the method comprising the steps of: emitting light of a first wavelength by means of the first optoelectronic device (1) of the first arrangement (20a); coupling the light of the first wavelength into a first optical fiber (31); transmitting the light of the first wavelength to a corresponding first optoelectronic device (1) of the second arrangement (20b); coupling the light of the first wavelength into the first optoelectronic device (1) of the second arrangement (20b); and detecting the light of the first wavelength by means of the first optoelectronic device (1) of the second arrangement (20b).
24. The method according to claim 23, further comprising the steps of: emitting light of a second wavelength by means of the first optoelectronic device (1) of the second arrangement (20b); coupling the light of the second wavelength into the first optical fiber (31); transmitting the light of the second wavelength to the first optoelectronic device (1) of the first arrangement (20a); coupling the light of the second wavelength into the first optoelectronic device (1) of the first arrangement (20a); and detecting the light of the second wavelength by means of the first optoelectronic device (1) of the first arrangement (20a).