Pulse circuit for distributed optical fiber temperature measurement laser device and temperature measurement device
By designing a pulse circuit for a distributed fiber optic temperature measurement laser device, the problems of insufficient measurement distance and high power consumption were solved, achieving the generation of high-power pulsed light and electromagnetic interference resistance, and providing temperature monitoring with meter-level resolution.
Patent Information
- Application Number
- CN202511481523.7
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-10-16
- Publication Date
- 2025-12-23
AI Technical Summary
Existing distributed fiber optic temperature measurement laser devices have insufficient measurement distance, high power consumption, and are not resistant to electromagnetic interference.
A pulse circuit for a distributed fiber optic temperature measurement laser device was designed, comprising a power supply unit, a central processing unit, and a pulse signal output unit. It is composed of specific chips and circuit components and generates high-power pulsed light and resists electromagnetic interference through efficient power conversion and signal processing.
It enables temperature measurement over longer distances, reduces power consumption, remains stable in electromagnetic interference environments, and provides spatiotemporal synchronous monitoring with meter-level resolution.
Smart Images

Figure CN121193233A_ABST
Abstract
Description
Technical Field
[0001] This invention relates to pulse output technology, specifically a pulse circuit and temperature measuring device for a distributed fiber optic temperature measuring laser device. Background Technology
[0002] Distributed fiber optic temperature measurement laser devices mainly use a laser to generate pulsed light and use this pulsed light to measure temperature through an optical path. However, existing distributed fiber optic temperature measurement laser modules have relatively weak light intensity, making them unable to measure the temperature of long-distance optical fibers. In addition, ordinary distributed fiber optic temperature measurement laser modules consume a lot of power during long-term high-power operation, and the electromagnetic environment of ordinary distributed fiber optic temperature measurement laser modules is complex, making traditional electrical signal sensing susceptible to interference.
[0003] Distributed fiber optic acoustic temperature sensing uses optical fiber as a continuous sensing medium, providing spatiotemporal synchronous temperature monitoring with meter-level resolution. It is resistant to electromagnetic interference, has high peak power of pulsed light, and low power consumption. Summary of the Invention
[0004] The purpose of this invention is to address the shortcomings of existing technologies by providing a pulse circuit and temperature measuring device for a distributed fiber optic temperature measuring laser device. This circuit, when applied to a distributed fiber optic temperature measuring laser device, can solve the problems of insufficient measurement distance, high power consumption, and poor electromagnetic interference resistance found in ordinary distributed fiber optic temperature measuring laser devices.
[0005] The technical solution to achieve the objective of this invention is: A pulse circuit for a distributed fiber optic temperature measurement laser device, the pulse circuit comprising a power supply unit, a central processing unit, and a pulse signal output unit, wherein: The power supply unit includes power chips U1, U2, and U3. External power enters the circuit through terminal P1, is connected in series with a resettable fuse F1 (1206L100 / 30NR), and then in parallel with a clamping diode D2 before being input to power chips U1, U2, and U3 respectively. The first path of power supply U1 is filtered by parallel energy storage capacitors C1 and C2 (2.2uf±1%) before being input to pin 2 of power chip U1. A resistor R3 (13KΩ±1%) and a capacitor C (6.8nf±1%) are also connected. 7 is connected in series and then in parallel with a capacitor C6 (39pF±1%) to pin 6 of power chip U1. A resistor R4 (160KΩ±1%) is connected in series with GND at pin 4 of power chip U1. A capacitor C3 (100nF±1%) is connected in series between pins 1 and 8 of power chip U1. A clamping diode D1 is connected in parallel with an inductor L1 (8R2M±1%), followed by two capacitors C4 and C5 (47uf±1%) in parallel. A resistor R1 (1.5KΩ±1%) is connected to the reference pin 5 of power chip U1. The first stage uses resistors R2 (51KΩ±1%) and R5 (10KΩ±1%) to ensure an output voltage of 5V. The second stage uses parallel capacitors C8 and C9 (2.2uf±1%) for energy storage and filtering before being input to pin 2 of power chip U2. Resistors R7 (13KΩ±1%) and C14 (6.8nf±1%) are connected in series, then in parallel with capacitor C13 (39pf±1%), and connected to pin 6 of power chip U2. Pin 4 of power chip U2 is connected in series with GND using a resistor R14 (160KΩ±1%). 8. A capacitor C10 with a value of 100nF±1% is connected in series between pins 1 and 8 of power chip U2. A clamping diode D10 is connected in parallel with a capacitor L2 with an inductance of 8R2M±1%, and then capacitors C11 and C12 with a value of 47uf±1% are connected in parallel. The reference pin 5 of power chip U2 is connected to resistors R6 with a value of 15KΩ±1% and R9 with a value of 10KΩ±1% to make the output voltage 2V. The third path is input to pins 4 and 8 of power chip U3 after energy storage and filtering by a capacitor C16 with a value of 4.7uf±1%. A capacitor C48 with a value of 10nF±1% is connected in series between pin 1 of power chip U3 and GND. The reference pin 6 of power chip U3 is connected to a resistor with a value of 4.A 3KΩ±1% resistor R10, a 1KΩ±1% resistor R61, and a 1nf±1% capacitor C19 ensure an output voltage of 5V. A 10uf±1% capacitor C17 is then connected in parallel. This power supply unit converts a wide-range DC power supply into a highly stable DC power supply, powering the entire pulse circuit. The central processing unit includes a central processing chip U13, bidirectional diodes D11 and D12, a digital-to-analog converter chip U12, a filter chip U15, and a connector socket P5. Pins 8, 11, and 12 of the central processing chip U13 are connected to communication pins 2, 4, and 5 of the clock delay chip U6, respectively. Pin 13 of the delay chip U6 is connected to the thermistor P3 (CMFB103F3950FANT). Pin 15 of the delay chip U6 is connected in series with a 510Ω±1% resistor R66 and an LED D9. Pins 18, 19, and 20 of the central processing chip U13 are connected to communication pins 6, 7, and 8 of the digital-to-analog converter chip U12. Pin 23 of the central processing chip U13 is connected to pin 1 of the amplifier chip U5. Pins 30 and 31 of the central processing chip U13 are connected to the communication pins via bidirectional diodes D11 and D12, and resistors R71 and R72 (10Ω±1%). Pins 4 and 8 of chip U15, and pins 1 and 5 of communication chip U15 are connected to connector socket P5 for external communication. Pins 6, 7, and 8 of digital-to-analog converter chip U12 are connected to pins 8, 11, and 12 of central processing chip U13. Pins 3, 4, and 5 of digital-to-analog converter chip U12 are connected to GND. Pin 1 of digital-to-analog converter chip U12 is connected to the 5V power supply through capacitor C51 (10uf±1%) and capacitor C47 (0.1uf±1%). Pins 2 and 9 of chip U12 output control voltage, which is connected to pin 24 of temperature control chip U7 to control the laser temperature. Pins 1, 4, 5, 6, 26, and 33 of central processing chip U13 are connected in parallel with resistors R64 (100KΩ±1%), R65 (100KΩ±1%), capacitors C49 (0.1uf±1%), and C50 (0.1uf±1%) to pin P4 for software programming. The central processing unit generates signals to control the laser. The pulse signal output unit includes amplifier chips U5 and U11, delay chip U6, NPN transistor Q1, freewheeling diode D4, laser D3, laser temperature control chip U7, and inductor L3. Pins 3 and 5 of amplifier chip U5 are connected to GND and 5V power supply, respectively. Input pin 1 is connected to pin 23 of central processing chip U13 via a 0Ω resistor R16. Pin 2 of amplifier chip U5 is connected to ground via a 4.7KΩ±1% resistor R62. Pin 4 of amplifier chip U5 outputs to pin 1 of clock delay chip U6 via a 49.9Ω±1% resistor R12. Pins 3 and 5 of amplifier chip U11 are connected to GND and 5V power supply, respectively. Input pin 1 of amplifier chip U11 is connected to pin 23 of central processing chip U13 via a 0Ω resistor R68. Pin 2 of amplifier chip U11 is connected to ground via a 4.7kΩ±1% resistor R69. Pin 4 of chip U11 outputs to an external data acquisition card via a 0Ω resistor R11. Communication pins 2, 4, and 5 of delay chip U6 are connected to pins 8, 11, and 12 of central processing chip U13. Pin 1 of delay chip U6 is connected to the output of amplifier chip U5. Pins 11 and 14 of delay chip U6 are connected to a 5V power supply via pull-up resistors R13 and R14, both with a resistance of 10KΩ±1%. Pin 16 is filtered by capacitor C20 (0.1uf±1%) and then connected to the 5V power supply. The delayed, filtered PWM signal output from pin 9 of delay chip U6 passes through capacitor C21 (0.1uf±1%) to the base of NPN transistor Q1. The base of NPN transistor Q1 is connected to the PWM signal output from pin 9 of delay chip U6. Two resistors, R20 and R15 (2Ω±1%), are connected in parallel to the emitter of NPN transistor Q1 and then connected to GND. The collector of NPN transistor Q1 is connected in series with the laser and then to a 5V power supply. Freewheeling diode D4 provides freewheeling current when the laser is powered off. Pins 1, 2, 21, 22, 23, and 24 of temperature control chip U7 are connected in series with resistors R22 (20KΩ±1%), R23 (10KΩ±1%), R24 (20KΩ±1%), R25 (15KΩ±1%), R26 (82KΩ±1%), R27 (7.5KΩ±1%), R28 (510KΩ±1%), R29 (240KΩ±1%), and R30 (10KΩ±1%). These are then connected in series with capacitor C27 (2.2uf±1%).A 2µF ± 1% capacitor C28, a 1µF ± 1% capacitor C29, and a 22nF ± 1% capacitor C30 form a dual-stage amplifier with PID control to stabilize the output of chip U7. Pin 4 of temperature control chip U7 uses a series resistor RC1 (62KΩ ± 1%) and a resistor RC2 (30KΩ ± 1%) to divide the voltage and control the output current. Pin 3 of temperature control chip U7 uses a series resistor RV1 (36KΩ ± 1%) and a resistor RV2 (10KΩ ± 1%) to divide the voltage and control the output saturation voltage. Pin 20 of temperature control chip U7 has a series resistor of 1KΩ ± 1%. A 1% resistor R17 and LED D5 indicate the operating status. Pins 5, 8, 15, and 16 of the temperature control chip U7 are powered by a series resistor R19 (10KΩ±1%), a 10Ω resistor R18, and parallel capacitors C22 (0.1uf±1%) and C23 (10uf±1%). Pins 14 and 17 of the temperature control chip U7 output a differential voltage through inductor L3 and capacitor C26 (10uf±1%), which is connected to the laser's temperature control pins 1 and 8. The pulse signal output unit outputs an electrical signal with adjustable current, power, pulse width, and frequency.
[0006] The power supply chips U1 and U2 are both MP1584EN-LF-Z, the power supply chip U3 is LM2576S-5.0(UMW), the amplifier chip U5 is LM358DR, the delay chip U6 is DS1100U-300+, the temperature control chip U7 is EA3056QDR, the amplifier chip U11 is LM358DR, the digital-to-analog converter chip U12 is MCP4728-E / UN, the central processing chip U13 is STM32F103C8T6, and the filter chip U15 is IP4254CZ8-4-TTL,13.
[0007] The clamping diodes D1, D2, and D10 are all SS34, the freewheeling diode D4 is M7, the bidirectional diodes D11 and D12 are both LESD5D5.0CT1G, the light-emitting diode D9 is C2286, and the LED D5 is C2286.
[0008] The terminal P1 is WJ15EDGRM-3.81-2P, the pin header P4 is Header 5, and the connector socket P5 is C2908613.
[0009] The NPN transistor Q1 is an MMBT3904-E.
[0010] The inductor L3 is C408332.
[0011] The internal operation of the above circuit is as follows: First, the external 12V power supply is connected to P1 to the power supply unit to power chips U1, U2, and U3 respectively, so that the output 5V and 2V provide power to the circuit board. When the central processing unit U13 is powered by 5V, it starts to operate. Pin 23 of U13 outputs a basic pulse signal to the pulse signal output unit U5 and U11. U11 is connected to J2 (COAX-M) to output a modulation signal for external use. U5 is connected to U6. The change of the control signal drives the transistor Q1 to turn on and off. Because the collector of transistor Q1 is connected in series with laser D3 (GT-TOSA), the on and off of transistor Q1 controls the on and off of laser D3 (GT-TOSA) to achieve pulsed laser output.
[0012] A distributed fiber optic temperature measurement laser device is disclosed. The device employs the aforementioned pulse circuit for distributed fiber optic temperature measurement laser devices. The device includes a frame with an internal base plate. The base plate houses an integrated circuit board comprising a power supply unit, a central processing unit, and a pulse signal output unit. A 2+1 x 1 combiner is located beside the integrated circuit board and is connected to a coaxial cooled laser placed on the circuit board. The frame's outer shell has a front panel with a power interface (model WJ15EDGRM-3.81-2P), a communication COM port (model C2908612), an NTC interface (model HX 1.25-2PINWSTP), an SMA interface (model 1-SMA11 threaded external screw internal hole RF1.13 line), and a 3m fiber optic outlet (model FC APC-FCAPC multimode fiber optic patch cord). The fiber optic outlet is connected to the combiner. The base plate and outer shell are integrally formed.
[0013] The distributed fiber optic temperature measurement laser device operates as follows: An external 12V power supply is connected from power interface 6 to power unit P1, supplying power to integrated circuit board 2 placed on base plate 11. Integrated circuit board 2 controls laser 3, also placed on integrated circuit board 2, to output high-power pulsed laser. The output fiber of this laser is fused together with a fiber combiner 1 placed on module base plate 11 using a fiber fusion splicer to further enhance the power of the output pulsed laser. Finally, the output fiber of fiber combiner 1 is connected to fiber outlet 10 using a fiber fusion splicer. The optical fiber connected to fiber optic outlet 10 is placed on the object being measured. The mechanism of fiber optic temperature measurement is based on the backscattering Raman effect. The laser pulse interacts with the fiber molecules, resulting in various scattering methods, such as Rayleigh scattering, Brillouin scattering, and Raman scattering. (Theoretically, all three types of scattering can be used as reference signals for temperature measurement. However, long-term research has shown that the intensity of Rayleigh scattering is extremely unstable due to the high sensitivity of fiber loss. If Rayleigh scattering light is used as the reference signal for the temperature measurement system for a long time, it will inevitably lead to uncertain changes in the loss characteristics of the fiber, resulting in poor system stability and ultimately the risk of system failure. Therefore, the scattering that responds to the greatest temperature change is selected when choosing the system reference signal, i.e., Raman scattering.) Raman scattering is due to the interaction of the laser pulse with the fiber molecules... Thermal vibration generates two light sources: Stokes light, which has a longer wavelength than the light source, and Anti-Stokes light, which has a shorter wavelength. The modulation of the optical fiber by external temperature causes a change in the intensity of the Anti-Stokes light within the fiber. The ratio of the Anti-Stokes to Stokes light provides an absolute indication of temperature. This principle is used to achieve distributed measurement of the temperature field along the optical fiber. By combining a high-quality pulsed light source and high-speed signal acquisition and processing technology, accurate temperature values at all points along the fiber can be obtained. As the temperature of the object being measured changes, the temperature of the optical fiber changes. This temperature change data is then transmitted back through the optical fiber to the fiber optic temperature measurement laser device. The data acquired by the fiber optic temperature measurement laser device is transmitted via COM port 7. The connection to P5 in the central processing unit enables the TTL to USB communication cable to the computer for processing and displaying temperature data, ultimately achieving fiber optic temperature measurement. The front panel 5 is mounted on the front of the chassis 4 to form a laser module. The NTC interface 8 is connected to P3 in the central processing unit for thermistor temperature acquisition. The SMA interface 9 is connected to J2 (COAX-M) of the pulse output unit for receiving the modulated signal output from the signal generator for use by the external acquisition card.
[0014] In this technical solution, the pulse circuit reduces power consumption through pulse frequency and low duty cycle, and the pulse circuit generates high peak power of pulsed light, thus enabling a longer temperature measurement distance. The distributed fiber optic temperature measurement laser device uses optical fiber as a continuous sensing medium to monitor temperature. The anti-electromagnetic interference optical fiber sensing is inherently resistant to electromagnetic interference and is suitable for high magnetic field environments. The distributed fiber optic acoustic temperature measurement sensor uses optical fiber as a continuous sensing medium and can provide spatiotemporal synchronous temperature monitoring with meter-level resolution. Attached Figure Description
[0015] Figure 1 This is a circuit diagram of the power supply unit in the embodiment; Figure 2 This is a circuit diagram of the pulse signal output unit in the embodiment; Figure 3 This is a circuit diagram of the central processing unit in the embodiment; Figure 4 This is a schematic diagram of the distributed fiber optic temperature measurement laser device in the embodiment.
[0016] In the diagram, 1. Bundle combiner 2. Integrated circuit board 3. Laser 3 4. Chassis 5. Front panel 6. Power interface 7. Communication COM port 8. NTC interface 9. SMA interface 10. Fiber optic outlet 11. Base plate 12. Detailed Implementation
[0017] The present invention will be further described below with reference to the accompanying drawings and embodiments, but this is not intended to limit the scope of the invention.
[0018] Example:
[0019] A pulse circuit for a distributed fiber optic temperature measurement laser device, the pulse circuit comprising a power supply unit, a central processing unit, and a pulse signal output unit, wherein, in this example: The power supply unit includes power chips U1, U2, and U3. External power enters the circuit through terminal P1, is connected in series with a resettable fuse F1 (1206L100 / 30NR), and then in parallel with a clamping diode D2. The power is then input to power chips U1, U2, and U3 respectively. The first path passes through parallel energy storage capacitors C1 and C2 (2.2uf each) for energy storage and filtering before being input to pin 2 of power chip U1. A 13KΩ resistor R3 and a 6KΩ capacitor... An 0.8nF capacitor C7 is connected in series and then in parallel with a 39pF capacitor C6 to pin 6 of power chip U1. A 160kΩ resistor R4 is connected in series with GND at pin 4 of power chip U1. A 100nF capacitor C3 is connected in series between pins 1 and 8 of power chip U1. A clamping diode D1 is connected in parallel with an 8R2M inductor L1, followed by two 47uf capacitors C4 and C5 in parallel. A 1.5µF resistor is connected to the reference pin 5 of power chip U1. A 51kΩ resistor R1, a 51kΩ resistor R2, and a 10kΩ resistor R5 ensure an output voltage of 5V. The second path, after energy storage and filtering via parallel capacitors C8 and C9 (2.2uf), is input to pin 2 of power chip U2. A 13kΩ resistor R7 and a 6.8nF capacitor C14 are connected in series, then in parallel with a 39pF capacitor C13, and connected to pin 6 of power chip U2. Pin 4 of power chip U2 is connected in series with GND via a 160kΩ resistor. A 100nF capacitor C10 is connected in series between pins 1 and 8 of power chip U2. A clamping diode D10 is connected in parallel with a capacitor L2 (8R2M inductance) and then in parallel with capacitors C11 and C12 (47uf). The reference pin 5 of power chip U2 is connected to resistors R6 (15KΩ) and R9 (10KΩ) to ensure an output voltage of 2V. The third path, after energy storage and filtering by capacitor C16 (4.7uf in parallel), is input to power chip U3. Pins 4 and 8 of the power supply chip U3 are connected in series with a 10nF capacitor C48 between pin 1 and GND. The reference pin 6 of the power supply chip U3 is connected to a 4.3KΩ resistor R10, a 1KΩ resistor R61, and a 1nF capacitor C19 to make the output voltage 5V. Then, a 10uF capacitor C17 is connected in parallel. The power supply unit converts the wide-range DC power supply into a highly stable DC power supply and powers the entire pulse circuit. The central processing unit includes a central processing chip U13, bidirectional diodes D11 and D12, a digital-to-analog converter chip U12, a filter chip U15, and a connector socket P5. Pins 8, 11, and 12 of the central processing chip U13 are connected to communication pins 2, 4, and 5 of the clock delay chip U6, respectively. Pin 13 of the delay chip U6 is connected to the thermistor P3 (CMFB103F3950FANT). Pin 15 of the delay chip U6 is connected in series with a 510Ω resistor R66 and an LED D9. Pins 18, 19, and 20 of the central processing chip U13 are connected to communication pins 6, 7, and 8 of the digital-to-analog converter chip U12. Pin 23 of the central processing chip U13 is connected to pin 1 of the amplifier chip U5. Pins 30 and 31 of the central processing chip U13 are connected to the communication chip via bidirectional diodes D11 and D12, and two 10Ω resistors R71 and R72. Pins 4 and 8 of U15 are connected to connector socket P5 for external communication. Pins 1 and 5 of communication chip U15 are connected to pins 8, 11, and 12 of central processing chip U13. Pins 3, 4, and 5 of digital-to-analog converter chip U12 are connected to GND. Pin 1 of digital-to-analog converter chip U12 is connected to the 5V power supply via capacitors C51 (10uf) and C47 (0.1uf). Pins 2 and 9 of digital-to-analog converter chip U12 output control voltage, which is connected to pin 24 of temperature control chip U7 to control the laser temperature. Pins 1, 4, 5, 6, 26, and 33 of central processing chip U13 are connected in parallel with resistors R64 and R65 (100KΩ), capacitors C49 and C50 (0.1uf), which are connected to pin header P4 for software programming. The central processing unit generates signals to control the laser. The pulse signal output unit includes amplifier chips U5 and U11, delay chip U6, NPN transistor Q1, freewheeling diode D4, GT-TOSA laser D3, laser temperature control chip U7, and inductor L3. Pins 3 and 5 of amplifier chip U5 are connected to GND and 5V power supply, respectively. Input pin 1 is connected to pin 23 of central processing chip U13 via a 0Ω resistor R16. Pin 2 of amplifier chip U5 is connected to ground via a 4.7kΩ resistor R62. Pin 4 of amplifier chip U5 outputs to pin 1 of clock delay chip U6 via a 49.9Ω resistor R12. Pins 3 and 5 of amplifier chip U11 are connected to GND and 5V power supply, respectively. Input pin 1 of amplifier chip U11 is connected to pin 23 of central processing chip U13 via a 0Ω resistor R68. Pin 2 of amplifier chip U11 is connected to pin 23 of central processing chip U13 via a 4.7kΩ resistor R68. Pin 9 is connected to ground. Pin 4 of amplifier chip U11 outputs to the external acquisition card through resistor R11 (0Ω). Communication pins 2, 4, and 5 of delay chip U6 are connected to pins 8, 11, and 12 of central processing chip U13. Pin 1 of delay chip U6 is connected to the output of amplifier chip U5. Pins 11 and 14 of delay chip U6 are connected to 5V power supply through pull-up resistors R13 and R14 (10KΩ). Power supply pin 16 of delay chip U6 is connected to 5V power supply after being filtered by capacitor C20 (0.1uf). The delayed and filtered PWM output from pin 9 of delay chip U6 is connected to the base of NPN transistor Q1 through capacitor C21 (0.1uf). The base of NPN transistor Q1 is connected to the PWM signal output from pin 9 of delay chip U6. The emitter of NPN transistor Q1 is connected to GND after being connected in parallel with two 2Ω resistors R20 and R15. The collector of NPN transistor Q1 is connected in series with the laser and then to a 5V power supply. Freewheeling diode D4 provides freewheeling current when the laser is powered off. Pins 1, 2, 21, 22, 23, and 24 of temperature control chip U7 are connected in series with the following resistors: R22 (20KΩ), R23 (10KΩ), R24 (20KΩ), R25 (15KΩ), R26 (82KΩ), R27 (7.5KΩ), R28 (510KΩ), R29 (240KΩ), and R30 (10KΩ). These are then connected in series with a 2.2µF capacitor C27.A 2µF capacitor C28, a 1µF capacitor C29, and a 22nF capacitor C30 form a dual-stage amplifier with PID control to stabilize the output of chip U7. Pin 4 of temperature control chip U7 uses a voltage divider (62KΩ resistor RC1 and 30KΩ resistor RC2) to control the output current. Pin 3 uses a voltage divider (36KΩ resistor RV1 and 10KΩ resistor RV2) to control the output saturation voltage. Pin 20 of temperature control chip U7 uses a 1KΩ resistor R... The operating status is indicated by LED D5 and pins 17. The temperature control chip U7 is powered by pins 5, 8, 15, and 16 through a series resistor R19 (10KΩ), a resistor R18 (10Ω), and a parallel capacitor C22 (0.1µF) and a capacitor C23 (10µF). Pins 14 and 17 of the temperature control chip U7 output a differential voltage through inductor L3 and a capacitor C26 (10µF), which is connected to the laser's temperature control pins 1 and 8. The pulse signal output unit outputs an electrical signal with adjustable current, power, pulse width, and frequency.
[0020] In this example, power supply chips U1 and U2 are both MP1584EN-LF-Z, power supply chip U3 is LM2576S-5.0(UMW), amplifier chip U5 is LM358DR, delay chip U6 is DS1100U-300+, temperature control chip U7 is EA3056QDR, amplifier chip U11 is LM358DR, digital-to-analog converter chip U12 is MCP4728-E / UN, central processing chip U13 is STM32F103C8T6, and filter chip U15 is IP4254CZ8-4-TTL,13.
[0021] In this example, the clamping diodes D1, D2, and D10 are all SS34, the freewheeling diode D4 is an M7, the bidirectional diodes D11 and D12 are both LESD5D5.0CT1G, the light-emitting diode D9 is a C2286, and the LED D5 is a C2286.
[0022] In this example, terminal P1 is WJ15EDGRM-3.81-2P, pin header P4 is Header 5, and connector socket P5 is C2908613.
[0023] In this example, the NPN transistor Q1 is an MMBT3904-E.
[0024] In this example, inductor L3 is C408332.
[0025] The internal operation of the above circuit is as follows: First, the external 12V power supply is connected to P1 to the power supply unit to power chips U1, U2, and U3 respectively, so that the output 5V and 2V provide power to the circuit board. When the central processing unit U13 is powered by 5V, it starts to operate. Pin 23 of U13 outputs a basic pulse signal to the pulse signal output unit U5 and U11. U11 is connected to J2 (COAX-M) to output a modulation signal for external use. U5 is connected to U6. The change of the control signal drives the transistor Q1 to turn on and off. Because the collector of transistor Q1 is connected in series with laser D3 (GT-TOSA), the on and off of transistor Q1 controls the on and off of laser D3 (GT-TOSA) to achieve pulsed laser output.
[0026] A distributed fiber optic temperature measurement laser device is provided. The device adopts the pulse circuit of the aforementioned distributed fiber optic temperature measurement laser device. The device has a frame 4, and a base plate 11 is provided inside the frame 4. The base plate 11 has an integrated circuit board 2 including a power supply unit, a central processing unit, and a pulse signal output unit. A 2+1 X1 combiner 1 is provided next to the integrated circuit board 2. The combiner 1 is connected to a coaxial cooled laser 3 placed on the circuit board 2. The outer shell of the frame 4 has a front panel 5. The front panel 5 has a power interface 6 (model WJ15EDGRM-3.81-2P), a communication COM port 7 (model C2908612), an NTC interface 8 (model HX 1.25-2PIN WSTP), an SMA interface 9 (model 1-SMA11 threaded external screw internal hole RF1.13 line), and a fiber optic outlet 10 (model FC APC-FCAPC multimode fiber optic patch cord---3m). The fiber optic outlet 10 is connected to the combiner 1. The base plate 11 and the outer shell are integrally formed.
[0027] The distributed fiber optic temperature measurement laser device operates as follows: An external 12V power supply is connected from power interface 6 to power unit P1, supplying power to integrated circuit board 2 placed on base plate 11. Integrated circuit board 2 controls laser 3, also placed on integrated circuit board 2, to output high-power pulsed laser. The output fiber of this laser is fused together with a fiber combiner 1 placed on module base plate 11 using a fiber fusion splicer to further enhance the power of the output pulsed laser. Finally, the output fiber of fiber combiner 1 is connected to fiber outlet 10 using a fiber fusion splicer. The optical fiber connected to fiber optic outlet 10 is placed on the object being measured. The mechanism of fiber optic temperature measurement is based on the backscattering Raman effect. The laser pulse interacts with the fiber molecules, resulting in various scattering methods, such as Rayleigh scattering, Brillouin scattering, and Raman scattering. (Theoretically, all three types of scattering can be used as reference signals for temperature measurement. However, long-term research has shown that the intensity of Rayleigh scattering is extremely unstable due to the high sensitivity of fiber loss. If Rayleigh scattering light is used as the reference signal for the temperature measurement system for a long time, it will inevitably lead to uncertain changes in the loss characteristics of the fiber, resulting in poor system stability and ultimately the risk of system failure. Therefore, the scattering that responds to the greatest temperature change is selected when choosing the system reference signal, i.e., Raman scattering.) Raman scattering is due to the interaction of the laser pulse with the fiber molecules... Thermal vibration generates two light sources: Stokes light, which has a longer wavelength than the light source, and Anti-Stokes light, which has a shorter wavelength. The modulation of the optical fiber by external temperature causes a change in the intensity of the Anti-Stokes light within the fiber. The ratio of the Anti-Stokes to Stokes light provides an absolute indication of temperature. This principle is used to achieve distributed measurement of the temperature field along the optical fiber. By combining a high-quality pulsed light source and high-speed signal acquisition and processing technology, accurate temperature values at all points along the fiber can be obtained. As the temperature of the object being measured changes, the temperature of the optical fiber changes. This temperature change data is then transmitted back through the optical fiber to the fiber optic temperature measurement laser device. The data acquired by the fiber optic temperature measurement laser device is transmitted via COM port 7. The connection to P5 in the central processing unit enables the TTL to USB communication cable to the computer for processing and displaying temperature data, ultimately achieving fiber optic temperature measurement. The front panel 5 is mounted on the front of the chassis 4 to form a laser module. The NTC interface 8 is connected to P3 in the central processing unit for thermistor temperature acquisition. The SMA interface 9 is connected to J2 (COAX-M) of the pulse output unit for receiving the modulated signal output from the signal generator for use by the external acquisition card.
Claims
1. A pulse circuit for a distributed fiber-optic temperature-sensing laser device, comprising: The pulse circuit is provided with a power supply unit, a central processing unit and a pulse signal output unit, wherein: The power supply unit is provided with power supply chip U1, power supply chip U2, power supply chip U3, external power supply enters the circuit through terminal P1, after series self-recovery type 1206L100 / 30NR fuse F1, parallel clamping diode D2 is then respectively input to power supply chip U1, power supply chip U2 and power supply chip U3, wherein, the first road is through parallel capacitor value 2.2uf±1% energy storage capacitor C1 and capacitor value 2.2uf±1% energy storage capacitor C2 energy storage filtering input to the 2 feet of power supply chip U1, resistance value 13KΩ±1% resistance R3 and capacitor value 6.8nf±1% capacitor C7 series then with capacitor value 39pf±1% capacitor C6 parallelly connected to the 6 feet of power supply chip U1, the 4 feet of power supply chip U1 is connected with GND in series with resistance value 160KΩ±1% resistance R4, the 1, 8 feet of power supply chip U1 is connected with GND in series with capacitor value 100nf±1% capacitor C3, the 8 feet of power supply chip U1 is output parallel clamping diode D1 series inductance value 8R2M±1% inductance L1 after parallel capacitor value 47uf±1% capacitor C4, capacitor value 47uf±1% capacitor C5, the reference foot 5 feet of power supply chip U1 is connected with resistance value 1.5KΩ±1% resistance R1, resistance value 51KΩ±1% resistance R2 and resistance value 10KΩ±1% resistance R5 so that the output voltage is 5V;The second road is through parallel capacitor value 2.2uf±1% capacitor C8 and capacitor value 2.2uf±1% capacitor C9 energy storage filtering input to the 2 feet of power supply chip U2, resistance value 13KΩ±1% resistance R7 and capacitor value 6.8nf±1% capacitor C14 series then with capacitor value 39pf±1% capacitor C13 parallelly connected to the 6 feet of power supply chip U2, the 4 feet of power supply chip U2 is connected with GND in series with resistance value 160KΩ±1% resistance R8, the 1, 8 feet of power supply chip U2 is connected with GND in series with capacitor value 100nf±1% capacitor C10, the 8 feet of power supply chip U2 is output parallel clamping diode D10 series inductance value 8R2M±1% capacitor L2 after parallel capacitor value 47uf±1% capacitor C11, capacitor value 47uf±1% capacitor C12, the reference foot 5 feet of power supply chip U2 is connected with resistance value 15KΩ±1% resistance R6, resistance value 10KΩ±1% resistance R9 so that the output voltage is 2V;The third road is through parallel capacitor value 4.7uf±1% capacitor C16 energy storage filtering input to the 4 feet, 8 feet of power supply chip U3, the 1 foot of power supply chip U3 is connected with GND in series with capacitor value 10nf±1% capacitor C48, the reference foot 6 feet of power supply chip U3 is connected with resistance value 4.3KΩ±1% resistance R10, resistance value 1KΩ±1% resistance R61 and capacitor value 1nf±1% capacitor C19 so that the output voltage is 5V after parallel capacitor value 10uf±1% capacitor C17 again; The central processing unit is provided with a central processing chip U13, bidirectional diodes D11 and D12, a digital-analog conversion chip U12, a filter chip U15 and a connector socket P5, the 8th, 11th and 12th pins of the central processing chip U13 are connected to the communication pins 2, 4 and 5 of the clock delay chip U6 respectively, the 13th pin of the delay chip U6 is connected to the P3 of the thermistor CMFB103F3950FANT, the 15th pin of the delay chip U6 is connected in series to the resistor R66 with a resistance value of 510Ω±1% and the light emitting diode D9, the 18th, 19th and 20th pins of the central processing chip U13 are connected to the communication pins 6, 7 and 8 of the digital-analog conversion chip U12, the 23rd pin of the central processing chip U13 is connected to the 1st pin of the amplifier chip U5, the 30th and 31st pins of the central processing chip U13 are connected to the 4th and 8th pins of the communication chip U15 through the bidirectional diodes D11 and D12, the resistors R71 and R72 with resistance values of 10Ω±1%, the 1st and 5th pins of the communication chip U15 are connected to the connector socket P5 for external communication, the communication pins 6, 7 and 8 of the digital-analog conversion chip U12 are connected to the 8th, 11th and 12th pins of the central processing chip U13, the 3rd, 4th and 5th pins of the digital-analog conversion chip U12 are connected to GND, the 1st pin of the digital-analog conversion chip U12 is connected to the power supply 5V through the capacitor C51 with a capacitance value of 10uf±1% and the capacitor C47 with a capacitance value of 0.1uf±1%, the 2nd and 9th pins of the digital-analog conversion chip U12 output control voltage to the 24th pin of the temperature control chip U7 for controlling the temperature of the laser, the 1st, 4th, 5th, 6th, 26th and 33rd pins of the central processing chip U13 are connected in parallel to the resistor R64 with a resistance value of 100KΩ±1%, the resistor R65 with a resistance value of 100KΩ±1%, the capacitor C49 with a capacitance value of 0.1uf±1% and the capacitor C50 with a capacitance value of 0.1uf±1% to the pin header P4 for burning software. The pulse signal output unit is provided with amplification chip U5 and amplification chip U11, delay chip U6, NPN transistor Q1, freewheeling diode D4, laser D3 with model GT-TOSA, laser temperature control chip U7, inductor L3, the 3th and 5th pins of amplification chip U5 are connected with GND and power supply 5V respectively, the 1st pin of the input end of amplification chip U5 is connected with the 23rd pin of central processing chip U13 through resistance R16 with resistance value of 0Ω, the 2nd pin of amplification chip U5 is connected with the ground through resistance R62 with resistance value of 4.7KΩ±1%, the 4th pin of amplification chip U5 outputs to the 1st pin of clock delay chip U6 through resistance R12 with resistance value of 49.9Ω±1%, the 3rd and 5th pins of amplification chip U11 are connected with GND and power supply 5V respectively, the 1st pin of the input end of amplification chip U11 is connected with the 23rd pin of central processing chip U13 through resistance R68 with resistance value of 0Ω, the 2nd pin of amplification chip U11 is connected with the ground through resistance R69 with resistance value of 4.7KΩ±1%, the 4th pin of amplification chip U11 outputs to external acquisition card through resistance R11 with resistance value of 0Ω, the communication pins 2, 4 and 5 of delay chip U6 are connected with the 8th, 11th and 12th pins of central processing chip U13, the 1st pin of delay chip U6 is connected with the output of amplification chip U5, the 11th and 14th pins of delay chip U6 are connected with power supply 5V through pull-up resistance R13 with resistance value of 10KΩ±1% and pull-up resistance R14 with resistance value of 10KΩ±1%, the power supply pin 16 of delay chip U6 is connected with power supply 5V after being filtered by capacitor C20 with capacitance value of 0.1uf±1%, the 9th pin of delay chip U6 outputs delay filtered PWM to the base of NPN transistor Q1 through capacitor C21 with capacitance value of 0.1uf, the base of NPN transistor Q1 is connected with the PWM signal output by the 9th pin of delay chip U6, the emitter of NPN transistor Q1 is connected with GND in parallel with resistance R20 and resistance R15 with resistance value of 2Ω±1%, the collector of NPN transistor Q1 is connected with power supply 5V in series with laser, freewheeling diode D4 provides freewheeling when the laser is powered off, the 1st, 2nd, 21st, 22nd, 23rd and 24th pins of temperature control chip U7 are connected with resistance R22 with resistance value of 20KΩ±1%, resistance R23 with resistance value of 10KΩ±1%, resistance R24 with resistance value of 20KΩ±1%, resistance R25 with resistance value of 15KΩ±1%, resistance R26 with resistance value of 82KΩ±1%, resistance R27 with resistance value of 7.5KΩ±1%, resistance R28 with resistance value of 510KΩ±1%, resistance R29 with resistance value of 240KΩ±1%, resistance R30 with resistance value of 10KΩ±1% in series, and then connected with capacitor C27 with capacitance value of 2.2uf±1% and capacitor C28 with capacitance value of 2.2uf±1% capacitor C28, capacitor C29 with a capacitance of 1uf±1%, capacitor C30 with a capacitance of 22nf±1% form a 2-pole amplification + PID adjustment control chip U7 stable output, the 4-pin of the temperature control chip U7 is divided by a series connection of a 62KΩ±1% resistor RC1 and a 30KΩ±1% resistor RC2 to control the output current, the 3-pin of the temperature control chip U7 is divided by a series connection of a 36KΩ±1% resistor RV1 and a 10KΩ±1% resistor RV2 to control the output saturation voltage, the 20-pin of the temperature control chip U7 is connected in series with a 1KΩ±1% resistor R17 and an LED lamp D5 to display the working state, the 5, 8, 15, 16-pin of the temperature control chip U7 is connected in series with a 10KΩ±1% resistor R19, a 10Ω resistor R18, and in parallel with a 0.1uf±1% capacitor C22 and a 10uf±1% capacitor C23 to supply power to the chip, the 14, 17-pin of the temperature control chip U7 is connected in series with an inductor L3 and a 10uf±1% capacitor C26 to output a differential voltage to the temperature control pins 1, 8 of the laser.
2. The pulse circuit for a distributed fiber optic temperature sensing laser apparatus of claim 1, wherein, The power supply chip U1 and U2 are both MP1584EN-LF-Z, the power supply chip U3 is LM2576S-5.0(UMW), the amplifier chip U5 is LM358DR, the delay chip U6 is DS1100U-300+, the temperature control chip U7 is EA3056QDR, the amplifier chip U11 is LM358DR, the digital-analog conversion chip U12 is MCP4728-E / UN, the central processing chip U13 is STM32F103C8T6 and the filter chip U15 is IP4254CZ8-4-TTL, 13.
3. The pulse circuit for a distributed fiber optic temperature sensing laser apparatus of claim 1, wherein, The diodes D1, D2 and D10 are all SS34, the freewheeling diode D4 is M7, the bidirectional diodes D11 and D12 are both LEDS5D5.0CT1G, the light emitting diode D9 is C2286 and the LED lamp D5 is C2286.
4. The pulse circuit for a distributed fiber temperature sensing laser apparatus of claim 1, wherein, The terminal P1 is WJ15EDGRM-3.81-2P, the pin header P4 is Header 5 and the connector socket P5 is C2908613.
5. The pulse circuit for a distributed fiber optic temperature sensing laser apparatus of claim 1, wherein, The NPN triode Q1 is MMBT3904-E.
6. The pulse circuit for a distributed fiber optic temperature sensing laser apparatus of claim 1, wherein, The inductor L3 is C408332.
7. A distributed fiber-optic temperature sensing laser device, comprising: The device adopts the pulse circuit for the distributed optical fiber temperature measurement laser device as claimed in any one of claims 1-6, and is provided with a machine frame, an inner portion of the machine frame is provided with a bottom plate, the bottom plate is provided with an integrated circuit board including a power supply unit, a central processing unit and a pulse signal output unit, a side of the integrated circuit board is provided with a 2+1 X1 combiner, the combiner is connected with a coaxial band refrigeration laser placed on the circuit board, a front panel is arranged on an outer shell of the machine frame, the front panel is provided with a power supply interface with a model of WJ15EDGRM-3.81-2P, a communication COM port with a model of C2908612, an NTC interface with a model of HX 1.25-2PIN WSTP, an SMA interface with a model of 1 generation-SMA11 tooth outer screw inner hole RF1.13 line, and a fiber outlet with a model of FC APC-FCAPC multimode fiber jumper---3m, the fiber outlet is communicated with the combiner, and the bottom plate and the shell are integrally formed.