A vacuum apparatus for processing a quartz semiconductor component
By introducing adjustable magnetic attraction and gas path component design into the vacuum equipment, the problem of frequent replacement of the adsorption stage in the vacuum equipment is solved, realizing automatic adaptation and stable cutting of wafers of different sizes, and improving production efficiency and cutting accuracy.
Patent Information
- Application Number
- CN202511794221.5
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2025-12-02
- Publication Date
- 2026-02-06
- Estimated Expiration
- 2045-12-02
AI Technical Summary
In the process of quartz semiconductor wafer cutting, existing vacuum equipment requires frequent replacement of the adsorption stage to adapt to different specifications, resulting in low production efficiency, large calibration errors, and easy leakage when changing the gas path, which affects cutting accuracy and continuous production.
The system employs an adjustable magnetic attraction force and pneumatic circuit component design. By controlling the combination of electromagnets and springs in the component, it achieves automatic adaptation of wafers of different sizes. The pneumatic circuit component combines fixed and variable pneumatic channels, and the sealing ring ensures airtightness. The vacuum component includes a buffer gas tank and a backflush gas tank to stabilize negative pressure and prevent leakage and blockage.
This improved the equipment's applicability to wafers of different sizes, reduced the frequency of replacement and calibration errors, ensured cutting accuracy and the stability of continuous production, and improved processing efficiency and yield.
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Figure CN121223969B_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The present application relates to the technical field of semiconductor processing manufacturing, in particular to a vacuum equipment for processing quartz semiconductor components. BACKGROUND
[0002] Quartz semiconductor components are one of the core basic materials in the semiconductor industry, such as quartz semiconductor wafers, which are widely used in the manufacturing field of high-precision semiconductor devices such as integrated circuits, power devices, sensors, etc., and are the key carriers to ensure the stability and reliability of semiconductor device performance. In the whole process of quartz semiconductor wafer processing, the cutting process is the core link between wafer preparation and device packaging, which requires precise cutting of large-size wafers (such as 8-inch, 12-inch) into small-size wafers (such as 1mm x 1mm, 2mm x 2mm) that meet device specifications. Due to the brittle and hard texture of quartz semiconductor wafers, the surface flatness requirement is extremely high, and micro-cracks, edge collapse or surface contamination of the wafer need to be avoided during cutting. Therefore, strict requirements are put forward for the support and positioning during cutting - the wafer needs to be tightly fixed by stable adsorption force, while ensuring uniform distribution of adsorption force to avoid local stress causing wafer damage. This makes the vacuum adsorption equipment an indispensable key equipment in the cutting process of quartz semiconductor wafers.
[0003] At present, the vacuum equipment for cutting quartz semiconductor wafers in the prior art still has defects in actual application, which restricts the efficiency and yield of semiconductor processing. Specifically, the core component of most existing vacuum equipment - the vacuum adsorption table is designed with fixed size. For different specifications of quartz semiconductor wafers, the corresponding size of the adsorption table needs to be replaced manually to meet the cutting requirements, so the continuous production process is interrupted frequently. During the replacement process, not only the old adsorption table needs to be disassembled and the new one needs to be installed, but also the flatness and positioning accuracy of the adsorption table need to be recalibrated. Under the condition of frequent calibration, there is a risk of calibration error. Since part of the calibration is calibrated by manual tools, human frequent calibration will introduce errors. When replacing the adsorption table, flatness calibration is also required. If the flatness is not accurate, there will be problems such as inaccurate focusing in subsequent laser and optical processing, uneven stress and inconsistent size in other mechanical processing such as mechanical cutting, and low conversion efficiency of the equipment between different size wafer processing, which is difficult to adapt to the flexible production demand of multiple varieties and small batches in the semiconductor industry.
[0004] To solve the above problems, a vacuum equipment for processing quartz semiconductor components is proposed. SUMMARY
[0005] To solve the above technical problems, a vacuum equipment for processing quartz semiconductor components is provided, which solves the problems raised in the background technology.
[0006] To achieve the above object, the application can adopt the following technical solutions to realize:
[0007] The application provides a vacuum equipment for processing a quartz semiconductor component, comprising:
[0008] A vacuum adsorption table, comprising an air exhaust shell, a base plate fixedly connected to the top end of the air exhaust shell, and a table plate fixedly connected to the top of the base plate;
[0009] A gas path assembly, comprising a plurality of through holes one with increasing diameters arranged on the table plate, and a plurality of through holes two arranged on the base plate corresponding to the positions of the through holes one, the through holes one and the through holes two in the innermost circle are fixed gas channels and butt joint gas channels one respectively, the remaining through holes one and the through holes two are variable gas channels and butt joint gas channels two respectively, and the top end of each butt joint gas channel two is in a horn shape;
[0010] A control assembly, comprising a plurality of iron rings with increasing diameters arranged below each butt joint gas channel two, a vertical rod movably arranged in each butt joint gas channel two, a plugging cone fixedly connected to the top end of each vertical rod, an electromagnet fixedly connected to the inside of the air exhaust shell, and a plurality of springs fixedly connected to the bottom of each iron ring in the circumferential direction, the bottom end of each vertical rod is fixedly connected to the iron ring located directly below, the bottom end of each spring is fixedly connected to the air exhaust shell, the elastic coefficient of each spring decreases with the increase of the inner diameter of the iron ring at the top end, and the electromagnet is located below the iron ring and spaced apart from the iron ring.
[0011] Further, the rod diameter of the vertical rod is smaller than the inner diameter of the butt joint gas channel two.
[0012] Further, the gas path assembly further comprises a sealing ring one for sealing the butt joint position of the fixed gas channel and the butt joint gas channel one, and the sealing ring one is embedded at the top end of the butt joint gas channel one.
[0013] Further, the gas path assembly further comprises a sealing ring two for sealing the butt joint position of the variable gas channel and the butt joint gas channel two, and the sealing ring two is embedded at the top end of the butt joint gas channel two.
[0014] Further, the control assembly further comprises a plurality of guide rods fixedly connected to each iron ring, and each guide rod is slidingly connected to the inside of the base plate.
[0015] Further, the vacuum equipment further comprises a vacuum assembly, the vacuum assembly comprises a three-way valve fixedly communicated with the inner cavity of the air exhaust shell, a buffer gas tank and a back-blowing gas tank fixedly communicated with the remaining two valve ports of the three-way valve respectively, and a vacuum pump with the gas inlet fixedly communicated with the gas outlet of the buffer gas tank, the gas outlet of the vacuum pump is fixedly communicated with the gas inlet of the back-blowing gas tank, and the three-way valve, the buffer gas tank, the back-blowing gas tank and the vacuum pump are fixedly installed in the inside of the equipment cabinet.
[0016] Further, the vacuum assembly further comprises an air filter one connected in series on the pipeline between the valve port of the three-way valve and the air inlet of the buffer gas tank.
[0017] Further, the vacuum assembly further comprises an air filter two connected in series on the pipeline between the valve port of the three-way valve and the air outlet of the back flushing gas tank.
[0018] From the above, the quartz semiconductor component processing vacuum equipment in the application has the following advantages:
[0019] In the prior art, different sizes of quartz semiconductor wafers need to be manually disassembled and installed on the adsorption table, and the flatness and positioning accuracy need to be recalibrated, which causes frequent shutdown to interrupt the continuous production process, consumes a lot of time, and has the risk of calibration error under the condition of frequent calibration (since part of the calibration is calibrated by manual tools, human frequent calibration will introduce errors), and if the flatness calibration of the replaced adsorption table has errors, it will also cause problems such as inaccurate focusing in subsequent laser and optical processing, uneven stress and inconsistent size in mechanical cutting and other processing. The present scheme solves this problem through the cooperative design of the control assembly and the vacuum adsorption table: in the control assembly, the elastic coefficients of the springs are sequentially reduced with the increase of the inner diameter of the iron ring (the outer ring is soft, and the inner ring is hard), and the electromagnetic iron that can adjust the magnetic attraction force by current is matched - when a small current is input, the magnetic attraction force first overcomes the elastic force of the outer soft spring, and the outer variable air passage is closed; after increasing the current, the elastic force of the inner hard spring is overcome, and the inner variable air passage is closed, without the need to replace the adsorption table to adapt to wafers of different sizes, improving the applicability of the equipment, and avoiding the deviation of the positioning reference caused by the deviation of the quartz wafer cutting.
[0020] In the prior art, the gas path and the adsorption table are designed in an integrated manner, and when the adsorption table is replaced, the gas path plate, the sealing element and other gas path components need to be replaced simultaneously, which requires retesting of the air tightness, and multiple disassembly and assembly can easily cause wear of the sealing element and cause negative pressure leakage, resulting in insufficient adsorption force of the quartz wafer, and further causing unstable positioning and deviation of the quartz wafer during cutting, resulting in cutting size difference and edge collapse, and even causing the quartz wafer to be scrapped. The present scheme solves this problem through the gas path assembly: in the gas path assembly, the fixed air passage and the butt joint air passage one form the core negative pressure channel, which is suitable for the center positioning of wafers of all sizes; the multiple variable air passages are adjusted by the control assembly, without the need to replace the gas path structure; the sealing ring one and the sealing ring two are respectively embedded in the top ports of the butt joint air passages one and two, and tightly fit the table plate and the substrate to maintain the sealing performance for a long time. This design eliminates the replacement step of the gas path assembly, reduces the cost of spare parts, effectively controls the negative pressure leakage, ensures the uniform adsorption force of the quartz wafer during cutting, and avoids cutting deviation caused by leakage.
[0021] In view of the problem that in the prior art, the vacuum pump is directly connected with the adsorption table, the lack of negative pressure buffering structure leads to large negative pressure fluctuation amplitude during pumping, easy to cause wafer micro displacement, and the quartz debris generated by cutting is easy to block the slender air duct, the air path needs to be disassembled and cleaned, and the wafer surface may be scratched to affect the processing yield, the present scheme solves the problem through the stable pressure of the vacuum assembly and the online blockage cleaning design: the buffer gas tank can store negative pressure, smooth the pressure fluctuation during the pumping process of the vacuum pump, and avoid the adsorption displacement of the wafer; when the air duct is blocked, the three-way valve switches the path, the back blowing tank (supplemented with high pressure gas from the vacuum pump outlet) can blow back along the air path, cooperated with the air filter one (filtering adsorption inlet impurities) and the air filter two (filtering back blowing gas impurities), realizing the air duct cleaning without disassembly, finally improving the cutting yield of the quartz wafer, the equipment does not need to stop for cleaning, the continuous running time is prolonged, and the production loss is reduced. BRIEF DESCRIPTION OF DRAWINGS
[0022] Figure 1 It is a whole structure schematic view of the quartz semiconductor component processing vacuum equipment shown in the present application;
[0023] Figure 2 It is a structure exploded schematic view of the vacuum adsorption table of the quartz semiconductor component processing vacuum equipment shown in the present application;
[0024] Figure 3 It is a structure schematic view of the substrate of the quartz semiconductor component processing vacuum equipment shown in the present application;
[0025] Figure 4 It is a sectional view of the vacuum adsorption table of the quartz semiconductor component processing vacuum equipment shown in the present application;
[0026] Figure 5 It is Figure 4 It is an enlarged schematic view of A in the middle;
[0027] Figure 6 It is an assembly schematic view of the control assembly and the substrate of the quartz semiconductor component processing vacuum equipment shown in the present application;
[0028] Figure 7 It is a partial structure schematic view of the control assembly of the quartz semiconductor component processing vacuum equipment shown in the present application;
[0029] Figure 8 It is a structure schematic view of the vacuum assembly of the quartz semiconductor component processing vacuum equipment shown in the present application.
[0030] In the present application, the reference signs are:
[0031] 11, pumping shell; 12, substrate; 13, table plate;
[0032] 21, through hole one; 211, fixed air passage; 212, variable air passage; 22, through hole two; 221, air passage one; 222, air passage two; 23, sealing ring one; 24, sealing ring two;
[0033] 31, iron ring; 32, vertical rod; 33, plugging cone; 34, guide rod; 35, spring; 36, electromagnet;
[0034] 41, three-way valve; 42, buffer gas tank; 43, back flushing gas tank; 44, vacuum pump; 45, air filter one; 46, air filter two. DETAILED DESCRIPTION
[0035] The technical solutions in the embodiments of the present application will be described clearly and completely below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all the embodiments of the present application. Based on the embodiments in the present application, all the other embodiments obtained by those of ordinary skill in the art without creative work fall within the protection scope of the present application.
[0036] Referring to Figures 1-8 The quartz semiconductor component processing vacuum equipment provided in the embodiments of the present application will be described in detail below:
[0037] Referring to Figures 1-2 The quartz semiconductor component processing vacuum equipment comprises:
[0038] The vacuum adsorption table comprises an air extraction shell 11 fixedly connected to the top of the equipment cabinet, a base plate 12 fixedly connected to the top end of the air extraction shell 11, and a table plate 13 fixedly connected to the top of the base plate 12.
[0039] It should be noted that in the process of cutting quartz semiconductor wafer, the existing technology needs to replace the vacuum adsorption table of corresponding size for cutting wafers of different sizes, which leads to low conversion efficiency of the equipment, and frequent replacement may cause the positioning accuracy of the vacuum adsorption table to decrease, and errors may occur in wafer processing. The vacuum adsorption table of the present scheme is the core bearing and negative pressure transmission structure, and its working principle is as follows: the suction shell 11 provides a closed negative pressure containing space for the entire adsorption system, the base plate 12 is fixedly connected with the top port of the suction shell 11 to realize air path sealing, and at the same time, it serves as the installation basis of the table plate 13 to ensure the flatness of the surface of the table plate 13; the table plate 13 is directly in contact with the quartz semiconductor wafer, and the flat top surface provides a stable support surface for the wafer. The table plate 13 is a fixed structure and does not need to be replaced (in order to maintain the internal air path, in the embodiment, the fixed connection between the table plate 13 and the base plate 12 is preferably bolted), and different sizes of wafers can be adapted through subsequent air path and control component adjustment, avoiding the problems of low efficiency caused by replacing the vacuum adsorption table in the prior art, and the errors caused by manual calibration after frequent shutdown, such as inaccurate focusing, uneven stress, and inconsistent size. The three cooperate to form an integrated structure of "closed negative pressure cavity-sealing transmission layer-wafer support surface", which can ensure the stable positioning of the wafer during cutting, and reduce the risk of cutting deviation caused by unstable support or frequent replacement of the table plate 13.
[0040] Referring to Figure 2 As shown in the figure, the quartz semiconductor component processing vacuum equipment further includes an air path assembly, which includes a plurality of circles of through holes one 21 with increasing diameters arranged on the table plate 13, and a plurality of circles of through holes two 22 corresponding to the positions of the through holes one 21 arranged on the base plate 12. Each circle of through holes one 21 includes a plurality of through holes one 21 with the same inner diameter, and the spacing of each through hole one 21 in each circle is the same. Similarly, each circle of through holes two 22 includes a plurality of through holes two 22 with the same inner diameter, and the spacing of each through hole two 22 in each circle is the same. The circle formed by the centers of each circle of through holes one 21 is concentric with the center of the table plate 13, and similarly, the circle formed by the centers of each circle of through holes two 22 is concentric with the center of the base plate 12. Among them, the through holes one 21 and the through holes two 22 at the innermost circle are fixed air passages 211 and docking air passages one 221 respectively, and all the remaining through holes one 21 and the through holes two 22 are variable air passages 212 and docking air passages two 222 respectively, and the top ports of each docking air passage two 222 are horn-shaped.
[0041] Further, referring to Figure 3 As shown in the figure, the air path assembly further includes a sealing ring one 23 for sealing the docking position of the fixed air passage 211 and the docking air passage one 221, and the sealing ring one 23 is embedded in the top port of the docking air passage one 221. The air path assembly further includes a sealing ring two 24 for sealing the docking position of the variable air passage 212 and the docking air passage two 222, and the sealing ring two 24 is embedded in the top port of the docking air passage two 222.
[0042] It should be noted that the air path of the wafer processing vacuum adsorption table in the prior art is designed with fixed size, and the air path structure needs to be replaced when the adsorption table is replaced, which is complicated to operate and has poor adaptability, and will also be accompanied by frequent downtime to interrupt continuous production, resulting in long process time-consuming problems. In the present scheme, the air path assembly is the key channel for negative pressure transmission, and its working principle is: the fixed air duct 211 and the corresponding communication of the butt joint air duct one 221 form the core negative pressure channel penetrating the table plate 13 and the base plate 12, ensuring that the wafer center area can always obtain stable negative pressure, adapting to the basic requirement of wafer center positioning in semiconductor cutting; The variable air duct 212 with multiple circles of increasing diameters and the butt joint air duct two 222 are distributed in the form of concentric circles, which can cover the edge area of wafers of different sizes, without the need to replace the air path structure to adapt to different sizes through on-off control, overcoming the defect that the air path needs to be replaced with the adsorption table in the prior art; The horn-shaped top port of the butt joint air duct two 222 provides a precise sealing basis for air path on-off, which can realize reliable closure with the cooperation of the plugging component; The sealing ring one 23 and the sealing ring two 24 respectively enhance the sealing performance of the fixed air duct 211, the variable air duct 212, and the butt joint air duct one 221, the butt joint air duct two 222, to avoid negative pressure leakage, especially during semiconductor cutting, which can prevent the problem of insufficient adsorption force of the wafer edge caused by air leakage, and further cause cutting deviation, significantly improving the adaptability efficiency of the equipment to wafers of different sizes.
[0043] Referring to Figures 4-7As shown, the vacuum equipment for processing quartz semiconductor components further comprises a control assembly, which comprises a plurality of iron rings 31 with increasing inner diameters and arranged below each of the second docking air passages 222, a plurality of vertical rods 32 arranged in each of the second docking air passages 222, a plurality of blocking cones 33 fixedly connected to the top ends of the vertical rods 32, a plurality of electromagnets 36 fixedly connected to the inner sides of the evacuation shell 11, and a plurality of spring rings 35 fixedly connected to the bottoms of the iron rings 31 in the circumferential direction. The diameters of the vertical rods 32 are smaller than the inner diameters of the second docking air passages 222 (in this embodiment, in order to ensure the rate of gas flow, the diameters of the vertical rods 32 are preferably less than half of the inner diameters of the second docking air passages 222), and the bottom ends of the vertical rods 32 are fixedly connected to the iron rings 31 located directly below. In this embodiment, in order to facilitate the arrangement of the vertical rods 32, the inner diameters of the second docking air passages 222 should be larger than the inner diameters of the variable air passages 212, because the air passages directly acting on the bottom of the wafer are usually small in the prior art. In order to adapt to the specifications of the prior art as much as possible, the inner diameters of the variable air passages 212 are similar to the specifications of the prior art. Under the premise that the inner diameters of the variable air passages 212 are small, in order to facilitate the arrangement of the control assembly, the diameters of the second docking air passages 222 should be large. In this way, the arrangement of the structure is facilitated, and the present processing technology is matched. The sizes of the blocking cones 33 are smaller than the sizes of the trumpet mouths of the second docking air passages 222, and the blocking cones 33 are located in the trumpet mouths. The bottom ends of the spring rings 35 are fixedly connected to the evacuation shell 11, wherein the spring constants of the spring rings 35 decrease with the increase of the inner diameters of the iron rings 31 at the top ends. The electromagnets 36 are located below the iron rings 31 and are separated from the iron rings 31 by a distance.
[0044] Further, the control assembly further comprises a plurality of guide rods 34 fixedly connected to the iron rings 31, and the guide rods 34 are slidingly connected to the inside of the base plate 12.
[0045] It should be noted that in the prior art, different sizes of vacuum adsorption tables need to be replaced to adapt to wafers, resulting in long conversion time, low efficiency, frequent shutdown to interrupt the continuous production process, and manual calibration with tools after replacement. Frequent manual calibration can introduce errors, and if the flatness calibration is not accurate when replacing the adsorption table, it will cause problems such as inaccurate focusing, uneven stress and inconsistent size in subsequent laser and optical processing, and other mechanical processing. The control assembly of the present scheme can solve this problem. In the process of cutting quartz semiconductor wafers, it realizes the adaptation of wafers of different sizes by precisely adjusting the on-off of the variable airway 212. The working principle is as follows: initially, when the spring 35 is in a relaxed state, the iron ring 31 drives the vertical rod 32 to move upward under the action of the elastic force, so that the plugging cone 33 is located in the upper part of the horn mouth of the second air connection channel 222 (it should be noted that the top of the plugging cone 33 must always be in a non-contact state with the bottom port of the variable airway 212, so that the gas can pass through), at this time the variable airway 212 is in communication with the second air connection channel 222, and the negative pressure can be transmitted to the corresponding area of the table plate 13 through the air path; when the electromagnet 36 is energized, the magnetic attraction generated by the electromagnet 36 will overcome the elastic force of the spring 35 to adsorb the iron ring 31 downward, and the vertical rod 32 drives the plugging cone 33 to move downward synchronously, when it moves downward to the bottom end of the horn mouth, the plugging cone 33 tightly fits with the bottom port of the horn mouth, realizing the plugging of the second air connection channel 222, at this time the corresponding variable airway 212 is closed.
[0046] Regarding the relationship between the spring 35 elastic coefficient and "soft and hard": the "soft and hard" nature of the spring 35 is determined by its elastic coefficient (also known as stiffness coefficient, denoted by k). It can be intuitively explained by Hooke's law (F=kx, where F is the force on the spring 35, and x is the deformation of the spring 35): under the same deformation x, the greater the elastic coefficient k, the greater the force F required by the spring 35, i.e. the spring 35 is harder; on the contrary, the smaller the k, the smaller the required force F, and the spring 35 is softer. For example, if the elastic coefficient k of the outer ring spring 35 is 5N / mm and the elastic coefficient k of the inner ring spring 35 is 10N / mm, when both of them need to be compressed by 2mm, the outer ring spring 35 only needs 10N of force, and the inner ring needs 20N of force. Obviously, the outer ring spring 35 is softer.
[0047] In the scheme, the elastic coefficients of the springs 35 corresponding to the rings 31 decrease in turn with the increase of the inner diameter of the rings 31 (that is, the k value of the outer ring spring 35 is smaller, and the k value of the inner ring spring 35 is larger), and the magnetic attraction force of the electromagnet 36 is adjusted in turn (the magnetic attraction force is controlled by changing the input current: the larger the current, the stronger the magnetic attraction force), forming a precise hierarchical control logic: when the electromagnet 36 is supplied with a small current, the magnetic attraction force generated by the electromagnet 36 can only overcome the elastic force of the soft spring 35 of the outer ring (because k is small, the required force is small), so that the outer ring 31 drives the plugging cone 33 to move downward, and closes the outer ring variable airway 212; continue to increase the current, so that the magnetic attraction force is increased to overcome the elastic force of the hard spring 35 of the inner ring (because k is large, the required force is large), and then the inner ring variable airway 212 is closed. Through this design, the variable airway 212 can be closed from the outside to the inside in turn, and the edge range of quartz wafers of different sizes can be accurately matched (for example, when cutting a 6-inch wafer, all airways outside the 6-inch wafer are closed; when cutting an 8-inch wafer, only the airways outside the 8-inch wafer are closed), so that the size adaptation can be completed without replacing the vacuum adsorption table, and the problem of low conversion efficiency of the equipment in the prior art is completely solved.
[0048] In order to better understand the above, the following is illustrated by the embodiment: assuming that the fixed airway 211 has only one ring, and the variable airway 212 has only two rings, and the ring areas correspond to 6-inch, 8-inch and 12-inch wafers in turn, so when a 12-inch wafer needs to be adsorbed, all the variable airways 212 are in the conducting state, when an 8-inch wafer needs to be adsorbed, the outermost variable airway 212 is in the closed state, and the remaining variable airways 212 are in the conducting state, and so on, when a 6-inch wafer needs to be adsorbed, all the variable airways 212 are in the closed state.
[0049] Further, the guide rod 34 limits the movement direction of the ring 31 through the sliding fit with the base plate 12, avoids the collision and deviation of the vertical rod 32 and the butt joint airway two 222, ensures the precise fit of the plugging cone 33 and the horn mouth, and further improves the reliability of the airway control.
[0050] Referring to Figure 8 As shown in the figure, the quartz semiconductor component processing vacuum equipment further comprises a vacuum assembly, the vacuum assembly comprises a three-way valve 41 fixedly communicated with the inner cavity of the air exhaust shell 11, a buffer gas tank 42 and a back flushing gas tank 43 respectively fixedly communicated with the remaining two valve ports of the three-way valve 41, and a vacuum pump 44 with the gas inlet fixedly communicated with the gas outlet of the buffer gas tank 42, and the gas outlet of the vacuum pump 44 is fixedly communicated with the gas inlet of the back flushing gas tank 43, wherein the three-way valve 41, the buffer gas tank 42, the back flushing gas tank 43 and the vacuum pump 44 are all fixedly installed in the interior of the equipment cabinet.
[0051] It should be noted that in the prior art, after replacing the adsorption table, the adsorption is often invalid due to unstable negative pressure or residual debris in the air passage, further reducing the efficiency of the equipment and the accuracy of wafer positioning. The vacuum assembly of the present scheme is specially designed for the quartz semiconductor cutting scene, which not only improves the size adaptation efficiency with the control assembly, but also solves the above stability problem. The working principle is as follows: after the vacuum pump 44 is started, a communication path is formed between the buffer gas tank 42, the three-way valve 41 and the inner cavity of the air extraction shell 11. The buffer gas tank 42 can store a certain amount of negative pressure, stabilize the pressure fluctuation during the air extraction process, avoid the instability of wafer adsorption caused by sudden pressure change, and ensure the continuous stability of negative pressure during cutting of wafers of different sizes. There is no need to re-adjust the negative pressure after replacing the adsorption table as in the prior art; when the debris generated by cutting blocks the air path, the three-way valve 41 switches the path to connect the back-blowing gas tank 43 with the inner cavity of the air extraction shell 11. The high-pressure gas stored in the back-blowing gas tank 43 provided by the air outlet of the vacuum pump 44 can be blown back along the air path to remove the debris in the air passage, avoid adsorption failure caused by blockage, and reduce downtime for cleaning (it is easy to occur that back-blowing can also cool the electromagnet 36, improving the stability of the equipment). The three-way valve 41 and the vacuum pump 44 belong to the prior art, and their specific technical principles are not repeated here. The vacuum assembly and the control assembly cooperate to further improve the adaptation efficiency of the equipment to wafers of different sizes from the aspects of negative pressure stability and air passage cleaning, meeting the high-efficiency production demand of semiconductor cutting.
[0052] Further, the vacuum assembly further includes an air filter one 45 connected in series on the pipeline between the valve port of the three-way valve 41 and the air inlet of the buffer gas tank 42. The air filter one 45 can reduce the probability of external impurities entering the vacuum pump 44, thereby improving the service life of the vacuum pump 44.
[0053] Further, the vacuum assembly further includes an air filter two 46 connected in series on the pipeline between the valve port of the three-way valve 41 and the air outlet of the back-blowing gas tank 43. The air filter two 46 can reduce the probability of impurities in the gas pipeline entering the vacuum adsorption table, avoid impurities entering the fixed air passage 211 and the docking air passage one 221, and the variable air passage 212 and the docking air passage two 222, avoid blockage of the slender air path, and prevent the quartz semiconductor from being adsorbed insecurely.
[0054] It should be noted that the terms "include", "contain" or any other variant thereof are intended to cover non-exclusive inclusion, so that a process, method, article or equipment including a series of elements not only includes those elements, but also includes other elements not explicitly listed or inherent to such process, method, article or equipment.
[0055] While embodiments of the application have been shown and described, it is to be understood that the embodiments described are merely exemplary of the principles and application of the present application. Numerous modifications and adaptions can be effected without departing from the spirit and scope of the present application, which is not limited to the exact construction and arrangement described. It is intended, therefore, to cover all modifications and adaptions that fall within the scope of the claims and their equivalents.
Claims
1. A vacuum device for processing quartz semiconductor components, characterized in that, The vacuum adsorption platform comprises a vacuum suction shell, a base plate fixedly connected to the top of the vacuum suction shell, and a platform fixedly connected to the top of the base plate. The air path assembly comprises a plurality of holes one with increasing diameters fixedly arranged on the platform, and a plurality of holes two corresponding to the positions of the holes one fixedly arranged on the base plate, the hole one and the hole two in the innermost circle are a fixed air channel and a butt joint air channel one respectively, the remaining holes one and holes two are variable air channels and butt joint air channels two respectively, the top of each butt joint air channel two is in a trumpet shape. The control assembly comprises a plurality of iron rings with increasing diameters arranged below each butt joint air channel two, a plurality of vertical rods movably arranged in each butt joint air channel two, a plurality of sealing cones fixedly connected to the top of each vertical rod, a plurality of electromagnets fixedly connected to the inside of the vacuum suction shell, and a plurality of springs fixedly connected to the bottom of each iron ring in the circumferential direction, the bottom of each vertical rod is fixedly connected to the iron ring directly below, the bottom of each spring is fixedly connected to the vacuum suction shell, the spring constant of each spring decreases with the increase of the inner diameter of the iron ring at the top, and the electromagnet is below the iron ring with a distance. The diameter of the vertical rod is smaller than the inner diameter of the butt joint air channel two.
2. A vacuum apparatus for processing a quartz semiconductor component according to claim 1, characterized by: The air path assembly further comprises a sealing ring one for sealing the butt joint between the fixed air channel and the butt joint air channel one, and the sealing ring one is embedded in the top port of the butt joint air channel one.
3. A vacuum apparatus for processing a quartz semiconductor component according to claim 2, characterized in that: The air path assembly further comprises a sealing ring two for sealing the butt joint between the variable air channel and the butt joint air channel two, and the sealing ring two is embedded in the top port of the butt joint air channel two.
4. A vacuum apparatus for processing a quartz semiconductor component according to claim 3, wherein: The control assembly further comprises a plurality of guide rods fixedly connected to each iron ring, and each guide rod is slidingly connected to the inside of the base plate.
5. A vacuum apparatus for processing a quartz semiconductor component according to claim 4, wherein: The vacuum assembly comprises a three-way valve fixedly connected to the inner cavity of the vacuum suction shell, a buffer gas tank and a back-blowing gas tank fixedly connected to the remaining two valve ports of the three-way valve respectively, and a vacuum pump with the gas inlet fixedly connected to the gas outlet of the buffer gas tank, the gas outlet of the vacuum pump is fixedly connected to the gas inlet of the back-blowing gas tank, and the three-way valve, the buffer gas tank, the back-blowing gas tank and the vacuum pump are fixedly installed in the inside of the equipment cabinet.
6. A vacuum apparatus for processing a quartz semiconductor component according to claim 5, wherein: The vacuum assembly further comprises an air filter one connected in series on the pipeline between the valve port of the three-way valve and the gas inlet of the buffer gas tank.
7. A vacuum apparatus for processing a quartz semiconductor component according to claim 6, wherein: The vacuum assembly further comprises an air filter two connected in series on the pipeline between the valve port of the three-way valve and the gas outlet of the back-blowing gas tank.
8. A vacuum apparatus for processing a quartz semiconductor component according to claim 7, characterized by:
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