Heating device and substrate processing equipment

Abstract

The invention discloses a heating device and substrate processing equipment, the heating device comprises a heat conduction piece and a heating film layer, the heating film layer is arranged on the heat conduction piece, and the heat conduction piece is provided with a lower surface; the heating device is configured in the mode that when the liquid film on the surface of the substrate is heated, the lower surface of the heat conduction piece faces the surface of the substrate, the projection of the lower surface on the substrate at least covers the center of the substrate, and the heating film layer is used for conducting heat to the liquid film through the lower surface. The liquid film on the surface of the substrate is directly heated, and the heating effect is achieved.

Description

Technical Field

[0001] This application relates to the field of semiconductor manufacturing technology, and in particular to a heating device and substrate processing equipment. Background Technology

[0002] In semiconductor substrate processing, the next step after photolithography is etching or ion implantation. During ion implantation, the ion beam cannot penetrate the photoresist where it is protected; only in areas without photoresist can the ion beam be implanted into the substrate to achieve doping. After ion implantation, the photoresist on the substrate surface needs to be removed.

[0003] Currently, the commonly used method for photoresist removal is to supply a processing solution to the surface of a rotating substrate, forming a liquid film on the substrate surface. The processing solution often uses SPM (Sulfuric Acid Hydrogen Peroxide Mixture), which utilizes the strong oxidizing power of the SPM solution to remove the photoresist. For substrates with high-dose ion implantation, it is necessary to increase the temperature of the SPM solution to improve its photoresist removal efficiency, shorten process time, and reduce solution consumption.

[0004] Therefore, it is necessary to provide a heating device and a substrate processing apparatus to solve the problem of how to heat the SPM solution. Summary of the Invention

[0005] The purpose of this application is to solve the problem of how to heat SPM solution in the prior art.

[0006] To address the aforementioned problems, one embodiment of this application proposes a heating device for heating a liquid film on the surface of a substrate, comprising:

[0007] A heat-conducting component and a heating film layer, wherein the heating film layer is disposed on the heat-conducting component, and the heat-conducting component has a lower surface;

[0008] The heating device is configured such that when the liquid film on the surface of the substrate is heated, the lower surface of the heat-conducting element faces the surface of the substrate, and the projection of the lower surface on the substrate at least covers the center of the substrate, and the heating film layer is used to conduct heat to the liquid film through the lower surface.

[0009] Another embodiment of this application provides a substrate processing apparatus, further comprising:

[0010] The aforementioned heating device;

[0011] A cleaning device used to clean the lower surface of heat-conducting components.

[0012] Another embodiment of this application provides a substrate processing apparatus, including:

[0013] A substrate tray is used to support and drive the substrate to rotate in a first direction;

[0014] A nozzle is used to supply processing liquid to the substrate surface and form a liquid film on the substrate surface;

[0015] A heating device for heating a liquid film, the heating device having a first end and a second end;

[0016] The nozzles and heating devices are arranged sequentially along the first direction;

[0017] The substrate processing apparatus is configured such that when the liquid film on the surface of the substrate is heated, the projection of the first end of the heating device on the substrate covers the center of the substrate, the projection of the second end of the heating device on the substrate covers the edge of the substrate, and the projection of the nozzle on the substrate is offset from the center of the substrate.

[0018] The heating device proposed in this application directly heats the liquid film on the substrate surface by setting a heat-conducting element and a heating film layer. The projection of the lower surface of the heat-conducting element onto the substrate covers at least the center of the substrate, thereby conducting the heat generated by the heating film layer to the liquid film on the substrate surface through the lower surface. As the substrate rotates, the liquid film on the entire substrate surface is heated, achieving the heating effect.

[0019] The substrate processing equipment proposed in this application, by providing a cleaning device, can clean the lower surface of the heat-conducting component after the heating device has heated the liquid film, so as to remove the acid mist adhering to the lower surface.

[0020] The substrate processing apparatus proposed in this application sets the nozzle so that its projection on the substrate is offset from the center of the substrate, and the nozzle and the heating device are arranged sequentially along the rotation direction of the substrate. When the substrate rotates along the first direction, most of the processing liquid discharged from the nozzle is carried along the first direction into the area below the heating device for heating, which is beneficial to improving the utilization rate of the heating device.

[0021] Other features and corresponding beneficial effects of this application will be described in the latter part of the specification, and it should be understood that at least some of the beneficial effects will become obvious from the description in this application. Attached Figure Description

[0022] Figure 1 This is an exploded view of the heat-conducting component when it is located above the substrate, according to Embodiment 1 of this application.

[0023] Figures 2a to 2e This is a schematic diagram of the orthographic projection of the lower surface of the heat-conducting component of different shapes in Embodiment 1 of this application onto the plane of the substrate;

[0024] Figure 3 This is a schematic cross-sectional view of the heat-conducting component in Embodiment 1 of this application when it is located above the substrate.

[0025] Figure 4 This is a top view of the substrate processing apparatus according to Embodiment 1 of this application; and

[0026] Figure 5 This is a schematic diagram of the heating device and nozzle of Embodiment 2 of this application projected onto the plane of the substrate. Detailed Implementation

[0027] The following specific embodiments illustrate the implementation of this application. Those skilled in the art can easily understand other advantages and effects of this application from the content disclosed in this specification. Although the description of this application is presented in conjunction with preferred embodiments, this does not mean that the features of this application are limited to this embodiment. On the contrary, the purpose of describing the application in conjunction with embodiments is to cover other options or modifications that may be derived based on the claims of this application. To provide a thorough understanding of this application, many specific details will be included in the following description. This application may also be implemented without using these details. Furthermore, to avoid confusion or obscuring the focus of this application, some specific details will be omitted in the description. It should be noted that, unless otherwise specified, the embodiments and features in the embodiments of this application can be combined with each other.

[0028] It should be noted that in this specification, similar reference numerals and letters in the following figures indicate similar items. Therefore, once an item is defined in one figure, it does not need to be further defined and explained in subsequent figures.

[0029] The technical solutions of this application will now be clearly and completely described with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of this application. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0030] In the description of this application, it should be noted that the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," and "outer," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are used only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this application. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and should not be construed as indicating or implying relative importance.

[0031] In the description of this application, it should be noted that, unless otherwise expressly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection between two components. Those skilled in the art can understand the specific meaning of the above terms in this application based on the specific circumstances.

[0032] To make the objectives, technical solutions, and advantages of this application clearer, the embodiments of this application will be described in further detail below with reference to the accompanying drawings.

[0033] Example 1:

[0034] Figure 1 This is an exploded view of the heat-conducting component when it is located above the substrate, according to Embodiment 1 of this application.

[0035] refer to Figure 1 The heating device proposed in this application is used, for example, in a monolithic substrate processing apparatus for removing unwanted photoresist from the surface of a substrate after etching or ion implantation. The heating device heats the liquid film on the substrate surface used to remove the photoresist. (Refer to the reference...) Figure 4 The substrate processing equipment includes a heating device, nozzles, and a substrate tray 600. The substrate tray 600 is used to support and rotate the substrate 300. The nozzles include a first nozzle 410 and a second nozzle 420. In this embodiment, while the substrate tray 600 rotates the substrate 300, the first nozzle 410 supplies a processing liquid, such as a mixture of sulfuric acid and hydrogen peroxide (SPM solution), to the surface of the substrate 300 to form a continuous, unbroken, and uniform liquid film on the surface of the substrate 300. The heating device heats this liquid film. The heating device includes a heat-conducting element 100 and a heating film layer 200. The heating film layer 200 is disposed on the heat-conducting element 100, which has a lower surface 1101. When the liquid film on the surface of the substrate 300 is heated, the lower surface 1101 of the heat-conducting element 100 faces the surface of the substrate 300, and the projection of the lower surface 1101 onto the substrate 300 at least covers the center O of the substrate 300. Heat from the heating film 200 is conducted to the liquid film on the surface of the substrate 300 through the lower surface 1101. The second nozzle 420 supplies another processing liquid, such as hot deionized water (Hot DIW), to the surface of the substrate 300 after heating is complete and the first nozzle 410 stops spraying liquid, to rinse the surface of the substrate 300 and obtain a clean substrate 300. In other embodiments, when the nozzle supplies the processing liquid to the substrate 300, the substrate 300 may be kept stationary. It should be noted that the specific structure of the substrate processing equipment will be described later.

[0036] Specifically, such as Figure 1 As shown, in this example, the heat-conducting component 100 of the heating device includes a base plate 110, with the aforementioned lower surface 1101 disposed on the base plate 110. The base plate 110 also includes an upper surface opposite to the lower surface 1101, and a heating film layer 200 is disposed on the upper surface, which can cover the entire upper surface. The lower surface 1101 faces the liquid film, and the projection of the lower surface 1101 on the substrate 300 at least covers the center O of the substrate 300. The heating film layer 200 is used to conduct heat from the upper surface of the base plate 110 through the lower surface 1101 to the liquid film, achieving a heating effect and making the temperature of the liquid film reach the process requirements. In this embodiment, the liquid film on the surface of the substrate 300 is directly heated. Compared with the method of first heating the processing liquid and then spraying the processing liquid onto the surface of the substrate 300, this application is advantageous in increasing the temperature of the liquid film at the edge of the substrate 300 and improving the edge adhesive removal efficiency.

[0037] Figures 2a to 2e This is a schematic diagram showing the orthographic projection of the lower surface of the heat-conducting component of different shapes in Embodiment 1 of this application onto the plane of the substrate. Figures 2a to 2e The shaded area is the orthographic projection area when the lower surface at least covers the center of the substrate. For convenience, it is shown in the figure below. Figures 2a to 2e Mark the lower surface 1101.

[0038] In some embodiments, reference Figure 2a The projection of the lower surface 1101 onto the substrate 300 at least covers the center O of the substrate 300, ensuring that the heat conduction range of the heating film layer at least covers the central region of the substrate 300. During the rotation of the substrate 300, the processing liquid on the substrate 300 flows from the center O to the edge of the substrate 300. Therefore, as the substrate 300 rotates, the heated processing liquid located in the central region of the substrate 300 flows to the edge region of the substrate 300, ultimately achieving the effect of heating the liquid film on the entire surface of the substrate 300, thereby improving the adhesive removal efficiency. Figure 2a In the example shown, the lower surface 1101 is circular in shape. In other examples, the lower surface 1101 may be fan-shaped, square, or triangular, etc.

[0039] In some embodiments, reference Figures 2b to 2e The lower surface 1101 forms a projection on the surface of the substrate 300. This projection covers the center O and the edge of the substrate 300 in the radial direction, such that the heat conduction range of the heating film layer 200 covers the radial region between the center O and the edge of the substrate 300 (e.g., Figure 2b and Figure 2c ), or make the heat conduction range of the heating film layer 200 span the entire surface of the substrate 300 (e.g. Figure 2d and Figure 2eThis simultaneously heats the liquid film at the center O of the substrate 300 and the liquid film at the edge of the substrate 300. As the substrate 300 rotates, the substrate 300 moves relative to the lower surface 1101, and the liquid film on the entire substrate 300 is heated, with the liquid film temperature evenly distributed on the surface of the substrate 300.

[0040] In some embodiments, reference Figures 2b to 2e The projection of the lower surface 1101 has an edge projection corresponding to the edge of the substrate 300 and a center projection corresponding to the center O of the substrate 300. The area of ​​the edge projection is not less than the area of ​​the center projection, so that the heat conduction range of the heating film layer 200 can cover a relatively large area of ​​the liquid film at the edge of the substrate 300, thereby enhancing the heating effect of the liquid film at the edge of the substrate 300. Specifically, refer to Figure 2b The lower surface 1101 has a fan-shaped shape, as shown in the reference. Figure 2c The lower surface 1101 is square in shape. Figure 2b and Figure 2c In the example shown, the projections of the two ends of the lower surface 1101 onto the substrate 300 respectively cover the center O of the substrate 300 and the edge of the substrate 300, and the length of the lower surface 1101 is approximately the same as the radius of the substrate 300. (Reference) Figure 2d and Figure 2e The projection of the lower surface 1101 onto the substrate 300 is centrally symmetrical about the center O of the substrate 300. Figure 2d and Figure 2e In the example shown, the projection of the lower surface 1101 onto the substrate 300 spans the surface of the substrate 300, and both ends of the projection of the lower surface 1101 cover the edges of the substrate 300. The length of the lower surface 1101 is approximately the same as the diameter of the substrate 300. It should be noted that the specific shape of the lower surface 1101 and the area of ​​the heating film layer 200 can be adjusted according to actual process requirements, and this application does not impose any particular limitations on them.

[0041] Figure 3 This is a cross-sectional structural diagram of the heat-conducting component in Embodiment 1 of this application when it is located above the substrate.

[0042] In some embodiments, reference Figure 3 The heating device is configured such that when the liquid film 310 on the surface of the substrate 300 is heated, the lower surface 1101 of the base plate 110 contacts the liquid film 310, so that the heat from the heating film layer 200 is sufficiently conducted to the liquid film 310. In other embodiments, the heating device may also be configured such that when the liquid film 310 on the surface of the substrate 300 is heated, there is a gap between the lower surface 1101 of the base plate 110 and the liquid film 310, which also achieves the effect of conducting the heat from the heating film layer 200 to the liquid film 310. The smaller the gap, the better the heating effect.

[0043] In this embodiment, we continue to refer to Figure 3 When the liquid film 310 on the surface of the substrate 300 is heated, the lower surface 1101 contacts the liquid film 310. Specifically, with the liquid surface of the liquid film 310 as a reference surface, the lower surface 1101 moves up and down relative to the reference surface by a predetermined distance. In this way, the heat-conducting element 100 plays a role in stirring the liquid film 310 and mixing the temperatures, avoiding a situation where the side of the liquid film 310 facing the heat-conducting element 100 has a higher temperature and the side in contact with the substrate 300 has a lower temperature, thus making the temperature of the liquid film 310 more uniform. The downward movement distance of the lower surface 1101 relative to the reference surface is not greater than the thickness of the liquid film 310, so as to avoid the lower surface 1101 touching the surface of the substrate 300. The thickness of the liquid film 310 is, for example, 2 mm, and the upward and downward movement distances of the lower surface 1101 are, for example, 1 mm each. The thickness of the liquid film 310 and the predetermined upward or downward movement distances can be adjusted according to the actual process. It should be noted that the design height of the outlet of the nozzle (specifically the first nozzle 410 and the second nozzle 420) should meet the following requirement: when the lower surface 1101 moves up and down relative to the reference surface with the liquid surface of the liquid film 310 as the reference surface, the outlet of the nozzle will not contact the surface of the substrate 300.

[0044] In some embodiments, reference Figure 1 The heat-conducting component 100 is made of quartz or sapphire, preferably quartz. The heating film layer 200 is a nano-electrothermal film or a graphene heating film, preferably a nano-electrothermal film. The heating film layer 200 is applied to the heat-conducting component 100 by means of adhesion or coating. Preferably, in this embodiment, the heating film layer 200 is coated on the upper surface of the base plate 110 at a temperature of 800°C.

[0045] Specifically, in conjunction with reference Figure 1 and Figure 3 The heat-conducting component 100 also includes a cover plate 120. The base plate 110 of the heat-conducting component 100 includes a bottom wall and a side wall. The heating film layer 200 is disposed on the upper surface of the bottom wall, and the side wall and the cover plate 120 are sealed by a sealing ring 130. In this way, the cover plate 120 and the base plate 110 together form a cavity, and the heating film layer 200 is located inside the cavity, which can prevent the heating film layer 200 from being corroded by acid gas.

[0046] In some embodiments, reference Figure 3 The cover plate 120 is provided with an air inlet channel 121 and an exhaust channel 122. The air inlet channel 121 is used to introduce cooling medium into the cavity, and the exhaust channel 122 is used to discharge the cooling medium from the cavity, so as to cool down the heating film layer 200 after the process is completed and avoid the heating film layer 200 from being too hot for a long time, which would affect its service life. The cooling medium is, for example, an inert gas or nitrogen.

[0047] In some embodiments, reference Figure 3The heating film layer 200 is also equipped with conductive wires (not shown), which have a first end and a second end. A wire connector 123 is also provided on the cover plate 120. The first end of the conductive wire of the heating film layer 200 is electrically connected to the heating film layer 200, and the second end of the conductive wire is electrically connected to the wire connector 123. The wire connector 123 is connected to a power source via a power cord.

[0048] Figure 4 This is a top view of the substrate processing apparatus of Embodiment 1 of this application.

[0049] In some embodiments, in conjunction with reference Figure 3 and Figure 4 The substrate processing equipment proposed in this application also includes a cleaning device 700, a swing arm 500, a rotation drive unit, and a lifting drive unit (not shown). The cleaning device 700 is used to clean the lower surface 1101 of the substrate 110. The swing arm 500 has a free end 501 and a fixed end 502. The heat-conducting element 100 and nozzles (specifically, a first nozzle 410 and a second nozzle 420) are jointly disposed at the free end 501. The nozzles can also be integrated into the heating device.

[0050] The first nozzle 410 may have one or two. In this embodiment, the first nozzle 410 has one. When the first nozzle 410 has one, it supplies SPM solution to the surface of the substrate 300. When the first nozzle 410 has two, it includes a third nozzle and a fourth nozzle (not shown) spaced apart. The third nozzle supplies hydrogen peroxide solution to the surface of the substrate 300, and the fourth nozzle supplies sulfuric acid solution to the surface of the substrate 300. The rotary drive unit drives the free end 501 of the swing arm 500 to rotate between the substrate tray 600 and the cleaning device 700 with the fixed end 502 as the rotation center. The lifting drive unit drives the swing arm 500 to move up and down. The heat-conducting member 100 moves up and down with the swing arm 500, thereby achieving the purpose of moving the lower surface 1101 up and down relative to the liquid surface of the liquid film 310 by a predetermined moving distance.

[0051] Continue to refer to Figure 3 and Figure 4 The cleaning device 700 is disposed on one side of the substrate tray 600. Since the lower surface 1101 is located above or in direct contact with the liquid film 310 during heating, an acid mist easily adheres to the lower surface 1101 after heating. Therefore, after heating, the free end 501 of the swing arm 500 can be rotated from the substrate tray 600 to the cleaning device 700 by a rotation drive unit to periodically clean the lower surface 1101. The cleaning solution contained in the cleaning device 700 is, for example, pure water or deionized water.

[0052] In this embodiment, reference Figure 2dWhen the projection of the lower surface 1101 onto the substrate 300 spans the surface of the substrate 300, and both ends of the projection of the lower surface 1101 cover the edges of the substrate 300, the projection of the first nozzle 410 onto the substrate 300 covers the center O of the substrate 300 or is offset from the center O of the substrate 300. For example... Figure 2d When the projection of the first nozzle 410 on the substrate 300 deviates from the center O of the substrate 300, a set of first nozzles 410 can be provided on each of the left and right sides of the lower surface 1101. When the substrate 300 rotates in a predetermined direction, such as clockwise, the processing liquid discharged from each set of first nozzles 410 will be mainly carried into the lower surface 1101 for heating, as indicated by the arrow. Each set of first nozzles 410 has one or two nozzles, and the function of each set of first nozzles 410 having one or two nozzles can be referred to the above description.

[0053] Reference Figure 1 , Figure 3 and Figure 4 The process of heating the liquid film 310 using the substrate processing equipment of this embodiment is described below:

[0054] Step 1: The substrate tray 600 drives the substrate 300 to rotate. The rotation speed of the substrate 300 is, for example, 100 rpm to 500 rpm, preferably 200 rpm.

[0055] Step 2: The swing arm 500 moves above the substrate 300 and then descends to the process position, for example, to a position 1 mm away from the liquid surface of the liquid film 310;

[0056] Step 3: The first nozzle 410 supplies the processing liquid to the surface of the substrate 300, forming a liquid film 310 on the surface of the substrate 300; in this step 3, there is one first nozzle 410, and the first nozzle 410 supplies SPM solution to the surface of the substrate 300.

[0057] Step 4: Turn on the heating, for example, by energizing the heating film 200. The heat from the heating film 200 is conducted to the liquid film 310 through the base plate 110 of the heat conductor 100 to increase the temperature of the liquid film 310.

[0058] Step 5: Move the swing arm 500 to move the heat-conducting component 100 up and down. With the liquid surface of the liquid film as the reference plane, the lower surface 1101 of the heat-conducting component 100 (that is, the lower surface 1101 of the base plate 110) moves up and down relative to the reference plane by a predetermined distance.

[0059] Step Six: After the predetermined time, stop heating the liquid film 310;

[0060] Step 7: The first nozzle 410 stops supplying the processing liquid (specifically SPM solution) to the surface of the substrate 300;

[0061] Step 8: The second nozzle 420 sprays hot deionized water onto the surface of the substrate 300 to rinse the surface of the substrate 300. The temperature of the hot deionized water is, for example, 40°C to 80°C, preferably 70°C;

[0062] Step 9: After rinsing, remove the swing arm 500; in this step, the swing arm 500 can be moved into the cleaning device 700 to clean the lower surface 1101.

[0063] Step 10: Perform the next process on the surface of substrate 300.

[0064] In this embodiment, after step seven, a cooling medium, such as inert gas or nitrogen, can be introduced into the cavity through the air inlet channel 121 to cool the heating film layer 200.

[0065] Furthermore, when the first nozzle 410 has two parts, namely, the first nozzle 410 includes a third nozzle and a fourth nozzle, the process differs from the steps described above in that: the third nozzle first supplies hydrogen peroxide solution to the surface of the substrate 300, causing the hydrogen peroxide solution to cover the entire surface of the substrate 300; then the fourth nozzle supplies sulfuric acid solution to the surface of the substrate 300, causing an SPM liquid film to form on the surface of the substrate 300; then heating is initiated to increase the temperature of the SPM liquid film; during the heating process, the heating method described in step five above can be adopted. After a predetermined heating time, the fourth nozzle stops supplying sulfuric acid solution to the surface of the substrate 300, then heating is stopped; finally, the third nozzle stops supplying hydrogen peroxide solution to the surface of the substrate 300.

[0066] Example 2:

[0067] Figure 5 This is a schematic diagram of the heating device and nozzle of Embodiment 2 of this application projected onto the plane of the substrate. For convenience, [the diagram is shown in the original text]. Figure 5 The heating device 100' and nozzle 410' are marked in the middle.

[0068] The substrate processing apparatus proposed in Embodiment 2 includes a substrate tray (not shown), a nozzle 410', and a heating device 100'. The substrate tray is used to support and rotate the substrate 300 along a first direction W, which can be clockwise or counterclockwise; in this example, the first direction W is clockwise. The nozzle 410' and the heating device 100' are arranged sequentially along the first direction W. When the substrate 300 rotates along the first direction W, the nozzle 410' supplies processing liquid to the surface of the substrate 300 to form a continuous, unbroken, and uniform liquid film on the surface of the substrate 300. The heating device 100' is used to heat the liquid film and has a first end 101' and a second end 102'. When the liquid film on the surface of the substrate 300 is heated, the nozzle 410' and the heating device 100' move together above the substrate 300. The projection of the first end 101' of the heating device 100' onto the substrate 300 covers the center O of the substrate 300, and the projection of the second end 102' of the heating device 100' onto the substrate 300 covers the edge of the substrate 300. The projection of the nozzle 410' onto the substrate 300 is offset from the center O of the substrate 300, i.e., the nozzle 410' is biased. In this embodiment, the heat conduction range of the heating device 100' covers the radial region between the center O of the substrate 300 and the edge of the substrate 300. As the substrate 300 rotates, the liquid film on the entire substrate 300 is heated.

[0069] In some embodiments, reference Figure 5 The nozzle 410' is located on the outer side of the sidewall of the heating device 100' and close to the first end 101'. In some other embodiments, the nozzle 410' may also be located near the middle of the sidewall of the heating device 100' along its length. It should be noted that the design position of the nozzle 410' along the length of the sidewall of the heating device 100' is determined according to the specific process, and this application does not limit it.

[0070] In some embodiments, continue to refer to Figure 5 There is a horizontal distance L between the center of nozzle 410' and the center O of substrate 300. The ratio of the horizontal distance L to the radius R of substrate 300, L / R, can be in the range of 0 < L / R < 2 / 3. As an example, during the heating of the liquid film, the horizontal distance L from the center of nozzle 410' to the center O of substrate 300 is in the range of 0 mm < L < 80 mm, preferably 30 mm < L < 60 mm, for example, 50 mm. The radius R of substrate 300 is 150 mm.

[0071] like Figure 5 As shown, to facilitate the explanation of the effect achievable when nozzle 410' is offset, in Figure 5A solid arrow indicates one of the trajectories H of the processing liquid discharged from nozzle 410'. During the heating of the liquid film on the surface of substrate 300, substrate 300 rotates around its center O along the first direction W. The offset nozzle 410' discharges processing liquid onto the surface of substrate 300, and the processing liquid spreads outwards. Since nozzle 410' and heating device 100' are arranged sequentially along the first direction W, as substrate 300 rotates along the first direction W, a large portion of the processing liquid discharged from nozzle 410' is carried along the first direction W into the area below heating device 100' for heating, which helps to improve the utilization rate of heating device 100'.

[0072] In some embodiments, the heating device 100' in this embodiment 2 may include the heat-conducting element 100 and the heating film layer 200 in embodiment 1, and the nozzle 410' adopts the first nozzle 410 in embodiment 1. In other embodiments, the heating device 100' may include a heat-conducting element and a heating lamp, and the light emitted by the heating lamp passes through the heat-conducting element to reach the liquid film on the surface of the substrate, thereby heating the liquid film.

[0073] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of this application, and are not intended to limit them. Although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some or all of the technical features therein. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of this application.

Claims

1. A heating device for heating a liquid film on a surface of a substrate, characterized by, The heating device comprises: a heat-conducting member and a heating film layer, the heating film layer being arranged on the heat-conducting member, the heat-conducting member having a lower surface; the heating device is configured to: when the liquid film on the substrate surface is heated, the lower surface of the heat-conducting member faces the substrate surface, and a projection of the lower surface on the substrate covers at least a center of the substrate, the heating film layer being used to conduct heat to the liquid film through the lower surface.

2. The heating device of claim 1, wherein The projection of the lower surface on the substrate covers an edge of the substrate.

3. The heating device of claim 2, wherein, The projection of the lower surface has an edge projection corresponding to an edge of the substrate and a center projection corresponding to a center of the substrate, and an area of the edge projection is not less than an area of the center projection.

4. The heating device of claim 3, wherein, The projection of the lower surface on the substrate is centrosymmetric about the center of the substrate.

5. The heating device of claim 1, wherein, The heating device is further configured to: when the liquid film on the substrate surface is heated, the lower surface is in contact with the liquid film.

6. The heating device of claim 1, wherein, The heating device is further configured to: when the liquid film on the substrate surface is heated, the lower surface moves up and down relative to a liquid surface of the liquid film by a predetermined moving distance.

7. The heating device of claim 1, wherein, The heating film layer is a nano electrothermal film or a graphene heating film.

8. The heating device of claim 1, wherein, The heating film layer is arranged on the heat-conducting member in a manner of being pasted or plated.

9. The heating device of claim 1, wherein, The heat-conducting member is made of quartz or sapphire.

10. The heating device of claim 1, wherein, The heat-conducting member comprises a bottom plate, the lower surface is arranged on the bottom plate, the bottom plate further comprises an upper surface opposite to the lower surface, and the heating film layer is arranged on the upper surface.

11. The heating device of claim 10, wherein, The heat-conducting member further comprises: a cover plate surrounding a cavity with the bottom plate, and the heating film layer is located in the cavity; the cover plate is provided with an air inlet channel and an air outlet channel, the air inlet channel is used to introduce cooling medium into the cavity, and the air outlet channel is used to discharge the cooling medium in the cavity.

12. The heating device of claim 11, wherein, Further comprising: a conductive wire having a first end and a second end; the cover plate is further provided with a wire passing joint, the first end of the conductive wire is electrically connected with the heating film layer, and the second end of the conductive wire is electrically connected with the wire passing joint.

13. A substrate processing apparatus, characterized by, Further comprising: the heating device according to any one of claims 1-12; a cleaning device used to clean the lower surface of the heat-conducting member.

14. The substrate processing apparatus according to claim 13, wherein Further comprising: a substrate tray used to carry and drive the substrate to rotate; a nozzle used to supply processing liquid to the substrate surface and form a liquid film on the substrate surface; a swing arm having a free end and a fixed end, and the heat-conducting member is arranged on the free end; a rotation driving part used to drive the free end of the swing arm to rotate between the substrate tray and the cleaning device with the fixed end as a rotation center; a lifting driving part used to drive the swing arm to move up and down.

15. A substrate processing apparatus, characterized by, Further comprising: a substrate tray used to carry and drive a substrate to rotate along a first direction; a nozzle used to supply processing liquid to the substrate surface and form a liquid film on the substrate surface; a heating device used to heat the liquid film, the heating device having a first end and a second end; wherein the nozzle and the heating device are arranged in sequence along the first direction. The substrate processing apparatus is configured such that, when the liquid film on the substrate surface is heated, a projection of the first end of the heating device on the substrate covers a center of the substrate, a projection of the second end of the heating device on the substrate covers an edge of the substrate, and a projection of the nozzle on the substrate deviates from the center of the substrate.

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