Process gas monitoring apparatus, volatilization container, substrate processing apparatus and method

Abstract

The invention relates to a process gas monitoring apparatus, a volatile container, a substrate processing apparatus, and a method for monitoring supply of process gas into a processing chamber. The process gas comprises a chemical substance that is thermally decomposable to form a decomposition product, and the method includes measuring a concentration of the decomposition product in the process gas.

Description

Technical Field

[0001] This disclosure generally relates to the fields of microfabrication and nanofabrication. In particular, this disclosure relates to the field of semiconductor manufacturing technology, such as the manufacture of integrated circuits. Background Technology

[0002] The semiconductor manufacturing industry has long been characterized by rapid technological advancements and a growing demand for more efficient and powerful electronic devices. As the industry strives to meet these demands, there is an increasing need to develop manufacturing processes that are not only cost-effective but also environmentally sustainable.

[0003] One of the key steps in semiconductor manufacturing is the deposition of thin films, such as silicon nitride (SiN), which is essential for the construction of various electronic components. In some cases, SiN can be deposited using plasma-enhanced processes, such as plasma-enhanced atomic layer deposition (PEALD). Plasma-enhanced processes can operate at relatively low temperatures and / or exhibit relatively high deposition rates. Summary of the Invention

[0004] This summary is provided to present the chosen concepts in a simplified form. These concepts are further described in detail in the following description of exemplary embodiments of this disclosure. This summary is not intended to identify key or essential features of the claimed subject matter, nor is it intended to limit the scope of the claimed subject matter.

[0005] According to a first aspect, a process gas monitoring device is provided for monitoring the supply of a process gas, the process gas containing chemical substances that can be thermally decomposed to form decomposition products. The process gas monitoring device includes a gas analyzer configured to generate a concentration signal indicating the concentration of decomposition products in the process gas. The process gas monitoring device also includes a process gas control unit configured to receive the concentration signal and generate a control signal if the concentration of decomposition products indicated by the concentration signal is greater than a predetermined concentration threshold.

[0006] According to a second aspect, a volatile container is provided for holding a thermally decomposable chemical substance to form decomposition products. The volatile container includes: a housing defining an inner cavity for holding the chemical substance in condensed form; a gas analyzer configured to generate a concentration signal indicating the concentration of decomposition products in the inner cavity; and a processing gas control unit configured to receive the concentration signal and generate a control signal if the concentration of decomposition products indicated by the concentration signal is greater than a predetermined concentration threshold.

[0007] According to a third aspect, a substrate processing apparatus is provided. The substrate processing apparatus includes: a processing chamber for holding at least a portion of a substrate; a processing gas inlet for receiving processing gas from an evaporation container; a processing gas delivery line extending between the processing gas inlet and the processing chamber for transferring the processing gas into the processing chamber, the processing gas containing a chemical substance that can be thermally decomposed to form decomposition products; a gas analyzer configured to generate a concentration signal indicating the concentration of decomposition products in the processing gas; and a processing gas control unit configured to receive the concentration signal and generate a control signal if the concentration of decomposition products indicated by the concentration signal is greater than a predetermined concentration threshold.

[0008] According to a fourth aspect, a method for monitoring the supply of a process gas to a processing chamber is provided. The method includes: providing a process gas to be supplied to the processing chamber, the process gas containing a chemical substance that can be thermally decomposed to form decomposition products; measuring the concentration of the decomposition products in the process gas; and generating a control signal if the concentration of the decomposition products is greater than a predetermined concentration threshold.

[0009] In some embodiments, the evaporation container is implemented as an evaporation container.

[0010] In some embodiments, the evaporation container contains chemicals that are retained within the cavity.

[0011] In some embodiments, the decomposition products have a first molecular weight, and the chemical substance has a molecular weight lower than the first molecular weight.

[0012] In some embodiments, the chemical substance includes a silane halide.

[0013] In some embodiments, the substrate processing apparatus includes a container heater for heating the evaporation container.

[0014] In some embodiments, the container heater is configured to maintain the temperature of the chemical substance inside the evaporating container within a temperature range of 0°C to 150°C.

[0015] In some embodiments, the gas analyzer is configured to measure the concentration of decomposition products in the process gas within a process gas delivery line.

[0016] In some embodiments, the gas analyzer is configured to measure the concentration of decomposition products in the process gas within the evaporation container.

[0017] In some embodiments, the gas analyzer is configured to measure the concentration of decomposition products by one or more in-line measurements and / or one or more in-line measurements.

[0018] In some embodiments, the substrate processing apparatus includes an alarm control unit configured to receive a control signal and issue an alarm in response to the control signal.

[0019] In some embodiments, the process gas delivery line includes a process gas bypass valve for guiding the process gas through the process chamber, the substrate processing apparatus includes a container unloading control unit operatively coupled to the process gas bypass valve and configured to receive a control signal, and the container unloading control unit is configured to keep the process gas bypass valve open to vent the evaporation container in response to the control signal.

[0020] In some embodiments, the substrate processing apparatus includes a storage container for storing condensed chemical substances and a refill line fluidly connected to the storage container for transferring the chemical substances from the storage container to an evaporation container.

[0021] In some embodiments, the substrate processing apparatus includes a second processing gas inlet for receiving processing gas from a second evaporation container.

[0022] In some embodiments, the substrate processing apparatus is implemented as a vacuum deposition apparatus, such as a chemical vapor deposition apparatus, such as a cyclic chemical vapor deposition apparatus, such as an atomic layer deposition apparatus, such as a time atomic layer deposition apparatus.

[0023] In some embodiments, providing a process gas includes holding the chemical substance within an evaporation container and allowing the chemical substance to evaporate to form a process gas.

[0024] In some embodiments, evaporating a chemical substance includes maintaining the temperature of the chemical substance within a temperature range of 0°C to 150°C.

[0025] In some embodiments, measuring the concentration of decomposition products includes measuring the concentration of decomposition products by one or more in-line measurements and / or by one or more in-line measurements.

[0026] In some embodiments, measuring the concentration of decomposition products includes measuring the concentration of decomposition products within the evaporation container.

[0027] In some embodiments, measuring the concentration of decomposition products includes measuring the concentration of decomposition products downstream of the evaporation container and upstream of the processing chamber.

[0028] In some embodiments, an alarm is issued in response to a control signal.

[0029] In some embodiments, the evaporation container is emptied in response to a control signal.

[0030] In some embodiments, the evaporation container is refilled in response to a control signal.

[0031] In some embodiments, a second evaporation container is initiated in response to a control signal to supply process gas into the processing chamber.

[0032] In some embodiments, if the concentration of the decomposition products is less than or equal to a predetermined concentration threshold, the processing gas is fed into the processing chamber. Attached Figure Description

[0033] A more complete understanding of embodiments of this disclosure can be obtained by considering the following illustrative drawings and by referring to the specific embodiments and claims:

[0034] Figure 1 A gas monitoring device is shown.

[0035] Figure 2 The evaporation container is shown.

[0036] Figure 3 The substrate processing equipment is described, and

[0037] Figure 4 A method for monitoring the supply of process gas to the process chamber is shown.

[0038] It should be understood that the elements in the accompanying drawings are shown for simplicity and clarity and are not necessarily drawn to scale. For example, the dimensions of some elements in the drawings may be exaggerated relative to other elements to help improve the understanding of the embodiments illustrated in this disclosure.

[0039] The illustrations presented herein are not intended to be actual views of any particular material, structure, or device, but are merely idealized representations used to describe embodiments of this disclosure.

[0040] For clarity and brevity, corresponding, similar and / or identical elements may use consistent reference numerals in all figures. Detailed Implementation

[0041] Although certain embodiments and examples are disclosed below, those skilled in the art will understand that the invention extends beyond the specific disclosed embodiments and / or uses of the invention and their obvious modifications and equivalents. Therefore, it is intended that the scope of the disclosed invention should not be limited to the specific disclosed embodiments described below.

[0042] The specific embodiments shown and described are illustrative of the invention and its best mode, and are not intended to limit the scope of aspects and embodiments in any way. In fact, for the sake of brevity, conventional manufacturing, connection, preparation, and other functional aspects of the system may not be described in detail or may be omitted entirely. Furthermore, the connecting lines shown in the figures are intended to represent exemplary functional relationships and / or physical connections between various elements. Many alternative or additional functional relationships or physical connections may exist in the actual system, and / or may not exist in some embodiments.

[0043] It should be understood that the configurations and / or methods described herein are exemplary in nature, and these specific embodiments or examples should not be considered limiting, as many variations are possible. The particular routines or methods described herein may represent one or more of any number of processing strategies. Therefore, the various actions shown may be performed in the order shown, in a different order, or in some cases omitted.

[0044] The subject matter of this disclosure includes all novel and non-obvious combinations and sub-combinations of the various processes, systems and configurations disclosed herein, as well as any and all equivalents thereof.

[0045] In this specification, "chemical substance" can refer to a form of matter having a constant chemical composition and characteristic properties. Alternatively, a chemical substance can refer to a material having specific chemical properties that distinguish it from other materials and is known by a common or scientific name. A chemical substance can include one or more molecules having the same molecular structure. Herein, "molecule" can refer to a group of atoms bonded together, representing the smallest basic unit of a chemical substance that can participate in a chemical reaction.

[0046] Throughout this specification, the term "thermally decomposable" can refer to the property of a chemical substance that allows it to decompose into simpler chemical structures upon heating. Alternatively, a thermally decomposable substance can refer to a compound that undergoes a chemical change upon heating and decomposes into two or more different substances. A thermally decomposable chemical substance may exhibit this property due to the instability of its molecular structure at elevated temperatures. In this document, "decomposition" can refer to the process by which a chemical substance decomposes into its constituent parts or into simpler chemical substances due to thermal energy. Alternatively, decomposition can refer to the separation of a chemical substance into elements or simpler chemical substances through an endothermic reaction.

[0047] In this disclosure, a "threshold" can refer to a point where a specific effect occurs when a value reaches a certain level. Alternatively, a threshold can refer to a limit that, when exceeded, triggers a change in the state or condition of the system. In some embodiments, a threshold can be implemented as a numerical value or ratio, etc. Furthermore, a "predetermined" threshold can refer to a limit established prior to a process or operation based on empirical data, theoretical calculations, or regulatory standards. Alternatively, a predetermined threshold can refer to a threshold that is repeatedly, cyclically, intermittently, or periodically updated during a process or operation to account for changes in the standard operating state of the system. Thus, a "predetermined concentration threshold" can refer to a predetermined threshold associated with the concentration of a gaseous substance. Alternatively, a predetermined concentration threshold can refer to a predetermined threshold associated with the concentration of decomposition products in the processed gas. Alternatively, a predetermined concentration threshold can refer to a quantifiable level of concentration determined by empirical data or theoretical calculations that triggers a response or action when exceeded.

[0048] Throughout this specification, "container" can refer to a receptacle suitable or configured for storing and / or holding one or more chemical substances. In some embodiments, the one or more chemical substances may include solid chemical substances, liquid chemical substances, and / or gaseous chemical substances. Furthermore, "evaporation container" can refer to a container suitable or configured for evaporating chemical substances. Alternatively or additionally, an evaporation container can refer to a container suitable or configured for supplying chemical substances in gaseous form to a substrate processing apparatus. Alternatively or additionally, an evaporation container can refer to a container including an outer wall and a gas outlet, the outer wall defining a cavity for storing and / or holding the substance, and the gas outlet allowing the substance to exit the cavity in gaseous form. In some embodiments, an evaporation container may include one or more container temperature control elements, such as one or more heating elements and / or one or more cooling elements; and / or one or more heat dissipation elements; and / or one or more insulating elements. In some embodiments, an evaporation container may include one or more fluid inlets. In some such embodiments, the one or more fluid inlets may include a carrier gas inlet. In some embodiments, an evaporation container may be implemented as a sublimation container and / or an evaporation container. In some embodiments, an evaporation container may include one or more sensors, such as one or more temperature sensors and / or one or more pressure sensors. In some embodiments, the evaporation container may include one or more valves, such as one or more flow control valves.

[0049] In this specification, the term "gaseous" may refer to any gas-like form, such as gas, vapor, or plasma, while the term "condensation" may refer to any non-gaseous form, such as liquid or solid.

[0050] In this disclosure, "evaporation container" can refer to a volatile container suitable or configured for evaporating (i.e., vaporizing and / or boiling) a liquid chemical substance. Alternatively, an evaporation container can refer to a volatile container suitable or configured to supply a gaseous chemical substance formed by the evaporation of a liquid chemical substance to a substrate processing apparatus. In some embodiments, the evaporation container may include a gas outlet for allowing the substance to exit the cavity in gaseous form; one or more fluid inlets, including, for example, a carrier gas inlet; and / or a carrier gas conduit extending inwardly from the carrier gas inlet, the carrier gas conduit being configured to guide a carrier gas introduced into the evaporation container via the carrier gas inlet to a position below the surface of the liquid substance during use of the evaporation container.

[0051] In this document, "processing chamber" may refer to a chamber adapted or configured to enable processes to be performed on a substrate. Alternatively, a processing chamber may refer to a vacuum chamber in which processes can be performed. A processing chamber may include one or more processing stations.

[0052] In this document, "processing station" may refer to a location suited or configured to hold at least a portion of a substrate, such that processes can be performed on the substrate. Alternatively, a processing station may refer to a portion of a processing chamber. In some embodiments, the respective processing stations of a processing chamber may be arranged or configured to be gas-isolated from each other, while one or more substrates are processed within one or more of the respective processing stations. In such embodiments, the respective processing stations of a processing chamber may be arranged in a gas-isolated manner by means of physical barriers and / or gas bearings and / or air curtains. In some embodiments, the processing stations may be arranged in a gas-isolated manner after or simultaneously with the placement of a substrate in the processing station. In some embodiments, after a substrate has been processed in a processing station, the processing station may be de-gas-isolated, allowing the substrate to be removed from the processing station. Typically, multiple substrates may be placed in a shared intermediate space within the processing chamber for moving individual substrates from one processing station to another.

[0053] In this disclosure, "substrate" can refer to any one or more underlying materials that can be used to form or on which devices, circuits, or films are formed. Alternatively or additionally, a substrate can refer to an object comprising bulk materials (such as silicon (e.g., single-crystal silicon)), other group IV materials (such as germanium), or compound semiconductor materials (such as GaAs), and optionally one or more layers overlying or underlying the bulk material and / or various structures (such as recesses, vias, lines, etc.) formed in or on at least a portion of the layers of the substrate. In some embodiments, the substrate may comprise a semiconductor wafer or an elongated sheet-like film.

[0054] In this document, "layer" or "film" can refer to a structure of a certain thickness formed on a surface. A layer can be continuous or discontinuous. A film or layer can consist of, or not consist of, discrete single films or layers with certain properties, or multiple films or layers. The boundaries between adjacent films or layers may or may not be clear and may be established based on or not on the physical, chemical, and / or any other properties, formation process or sequence, and / or function or purpose of adjacent films or layers. A layer or film may or may not include pinholes. A film layer may or may not be porous.

[0055] Throughout this specification, the term "measurement" can refer to a process for obtaining quantitative or qualitative values ​​representing the characteristics of an object or phenomenon. In some embodiments, measurements can be obtained by direct or indirect methods and may involve the use of one or more measuring instruments. Furthermore, the term "in line" can refer to a process or component integrated within a production line or system such that it operates simultaneously with the process flow, while the term "on-line" can refer to a process or component operating on a sample flow transferred from the process flow.

[0056] Therefore, on the one hand, "in-line measurement" can refer to measurements performed directly within a production line or system without interrupting or diverting the process flow. Alternatively, in-line measurement can refer to measurements performed continuously or at regular intervals during the operation of a production process. In some embodiments, in-line measurement may involve the use of sensors or instruments installed at specific points along the production line.

[0057] On the other hand, "online measurement" can refer to a measurement performed on a sample taken from a continuous process flow without stopping or interrupting the process flow. Alternatively, online measurement can refer to a measurement performed via a bypass, which allows analysis to be performed under less demanding and / or less demanding conditions than those present in the process being measured. In some embodiments, online measurement may involve using an automated sampling system that transfers a portion of the process flow to the analytical instrument. This allows for continuous monitoring and analysis of the process while maintaining the integrity of the measurement process.

[0058] In this specification, "etching" can refer to the removal of material from a substrate. Alternatively or additionally, etching can refer to the formation of a volatile substance, for example, via one or more chemical reactions. Furthermore, "dry etching" can refer to the removal of material from a substrate using one or more gaseous substances. In some embodiments, a dry etching process may involve introducing one or more gaseous substances into a processing chamber. In some embodiments, dry etching may involve the use of an active substance, such as an active substance formed in plasma. Naturally, "dry etching apparatus" can then refer to a system adapted or configured to perform dry etching. In some embodiments, a dry etching apparatus may include a processing chamber for containing a substrate and gas, a gas delivery system, and temperature and pressure controls for facilitating dry etching.

[0059] Throughout this specification, "substance" may refer to a chemical substance, such as a chemical compound or molecular structural unit of a solid array, or a molecular entity. Alternatively, a substance may refer to one or more structurally distinct atoms, molecules, ions, free radicals, or complexes. In this document, "ion" may refer to an atomic or molecular particle with a net charge, and / or "free radical" may refer to an atomic or molecular particle with unpaired electrons. Furthermore, "active substance" may refer to an unstable substance formed in plasma via interaction with a catalytic material at elevated temperatures and / or by other suitable means. Alternatively, an active substance may refer to ions and / or free radicals.

[0060] In this specification, "chemical vapor deposition process" or "CVD process" can refer to a coating process in which one or more gaseous compounds decompose to deposit a layer onto a substrate. Furthermore, "cyclic chemical vapor deposition process" or "cyclic CVD process" can refer to a CVD process that includes sequentially and / or cyclically providing precursors and / or reactants and / or active materials to deposit the layer onto the substrate.

[0061] Throughout this specification, "atomic layer deposition process" or "ALD process" may refer to a cyclic CVD process including purging a processing chamber or station between the provision of precursors and / or reactants and / or active materials. Typically, purging can be accomplished by flushing the processing chamber or station with an inert gas. Alternatively or concurrently, "atomic layer deposition process" or "ALD process" may refer to a cyclic CVD process suitable for or configured to deposit a conformal layer (e.g., for a layer characterized by an aspect ratio (AR) of 3:1, 5:1, or 10:1, having at least 95%, 99%, or about 100% stepped coverage (SC)) onto a substrate. As used herein, the term "atomic layer deposition" may also refer to or not refer to the process specified by related terms such as chemical vapor deposition, atomic layer epitaxy (ALE), molecular beam epitaxy (MBE), gas source MBE, organometallic MBE, and chemical beam epitaxy when performed with alternating pulses of precursor / reactant gases and purge gases (e.g., inert carrier gases).

[0062] Furthermore, "time atomic layer process" or "time ALD process" can refer to an ALD process in which the process of the purge treatment station includes a time purge step during which the supply of precursors and / or reactants and / or active materials is stopped. Alternatively or alternatively, "time atomic layer process" or "time ALD process" can refer to an ALD process in which the substrate on which the layer is deposited remains stationary during deposition.

[0063] In this specification, "process" can refer to a series of one or more steps leading to a final result. Additionally, "step" can refer to a measure taken to achieve one or more predefined final results. Typically, a method can be a single-step or multi-step method. Furthermore, a process can be divided into multiple subprocesses, where individual subprocesses within such multiple subprocesses may or may not share common steps.

[0064] In this specification, the term "unit" can refer to an apparatus suitable for or configured to perform at least one particular process. A unit typically includes one or more components, each of which can be classified as a part of the unit. Generally, a unit may include any components essential and / or advantageous for performing the particular process suitable for or configured to be performed by the unit. These components may include, for example, mechanical, electrical, optical, pneumatic, hydraulic, and / or software elements.

[0065] Throughout this specification, "control unit" can refer to a device having at least one specified function related to determining and / or influencing operating conditions, states, or parameters associated with another device, unit, or component, and may be an electronic device. The control unit may be, or can form, an integrated part of a multifunctional control system. Furthermore, a control unit "configured" to perform a process can mean that the control unit is capable of and suited to that process. This can be achieved in various ways. For example, the control unit may include at least one processor and at least one memory connected to said processor. The memory may store program code instructions that, when executed on the processor, prompt the processor to perform the process in question. The memory device within the control unit may include non-transitory computer-readable media, such as physical computer memory, including hard disk drives, solid-state memory, random access memory (RAM), read-only memory (ROM), optical disks, volatile or non-volatile memory, combinations thereof, etc. Additionally or alternatively, any functionally described attributes of the control unit may be performed at least in part by one or more hardware logic components. Suitable hardware logic components of this illustrative type include, for example, but not limited to, field-programmable gate arrays (FPGAs), application-specific integrated circuits (ASICs), application-specific standard products (ASSPs), systems-on-a-chip (SOCs), complex programmable logic devices (CPLDs), etc. The control unit can typically operate based on any suitable principle and via any suitable circuit and / or signal recognized in the art.

[0066] In some embodiments, the methods, apparatus, and devices currently described can be used in the fields of microfabrication and nanofabrication. In some embodiments, the methods, apparatus, and devices currently described can be used in the fields of microelectromechanical systems, microsystems, photonics, photovoltaics, display devices, and / or semiconductor manufacturing technologies. In some embodiments, the methods, apparatus, and devices currently described can be beneficial for plasma-enhanced atomic layer deposition (PEALD). In some embodiments, they can be applied to the fabrication of silicon-based electronic devices, including memory devices, microprocessors, and sensors. In some embodiments, they can contribute to sustainable manufacturing practices in semiconductor production. In some embodiments, the methods, apparatus, and devices currently described can be used to reduce chemical waste and improve deposition efficiency in the production of silicon nitride (SiN) films.

[0067] Figure 1 A process gas monitoring device 100 for monitoring the supply of process gas 101, according to an embodiment, is schematically shown. Process gas 101 contains chemical substances that can be thermally decomposed to form decomposition products. Unless otherwise explicitly stated, Figure 1 The gas monitoring device 100 of the embodiments may include or exclude any features disclosed herein, with necessary modifications. Other embodiments may be with or without these features. Figure 1 The embodiments are the same or similar.

[0068] Figure 1 The processing gas monitoring device 100 of one embodiment includes a gas analyzer 110 configured to generate a concentration signal 111 indicating the concentration of decomposition products in the processing gas 101. The processing gas monitoring device 100 also includes a processing gas control unit 120 configured to receive the concentration signal 111 and generate a control signal 121 if the concentration of decomposition products indicated by the concentration signal 111 is greater than a predetermined concentration threshold. In some embodiments, such a gas analyzer and such a processing gas control unit can increase the precision and / or accuracy of sensing the degradation of the processing gas in the processing chamber of the substrate processing apparatus, which in turn can enable an increase in the overall utilization of chemicals in the processing gas.

[0069] Figure 2 A vapor container 200 according to an embodiment is schematically depicted for holding a thermally decomposable chemical substance 220 to form decomposition products 221. Unless otherwise explicitly stated, Figure 2 The evaporation container 200 of the embodiments may include or exclude any features disclosed herein, with necessary modifications. Other embodiments may include or exclude... Figure 2 The embodiments are the same or similar.

[0070] Figure 2The evaporator 200 of one embodiment includes a housing 210 defining an inner cavity 211 for retaining the chemical substance 220 in condensed form. The evaporator 200 also includes a gas analyzer 110 and a processing gas control unit 120. The gas analyzer 110 is configured to generate a concentration signal indicating the concentration of decomposition products 221 in the inner cavity 211, and the processing gas control unit 120 is configured to receive the concentration signal and generate a control signal if the concentration of decomposition products indicated by the concentration signal is greater than a predetermined concentration threshold.

[0071] exist Figure 2 In one embodiment, the evaporation container 200 is implemented as an evaporation container. In other embodiments, the evaporation container may or may not be implemented as an evaporation container.

[0072] exist Figure 2 In one embodiment, the chemical substance 220 is held in liquid form within the cavity 211, and the evaporation container 200 includes a carrier gas inlet 230 provided with a carrier gas flow control valve 231 and a gas outlet 232 provided with a gas outlet flow control valve 233. The evaporation container 200 also includes a carrier gas conduit 234 configured to guide a carrier gas 235 (such as argon or helium) introduced into the evaporation container 200 via the carrier gas inlet 230 to below the surface 222 of the chemical substance 220 during use of the evaporation container 200. In other embodiments, the evaporation container for containing a chemical substance that can be thermally decomposed to form decomposition products may include or exclude the chemical substance, carrier gas inlet, gas outlet, and / or carrier gas conduit.

[0073] exist Figure 2 In some embodiments, the decomposition product 221 has a first molecular weight, and the chemical substance 220 has a molecular weight lower than the first molecular weight. In some embodiments, a chemical substance with a molecular weight lower than the first molecular weight of the decomposition product may cause the decomposition product to have a higher density than the chemical substance under various environmental conditions, which in some cases may cause the decomposition product to settle toward the bottom of the evaporation container. In other embodiments, the decomposition product has a first molecular weight, and the chemical substance may or may not have a molecular weight lower than the first molecular weight of the decomposition product.

[0074] Figure 2 In one embodiment, the decomposition product 221 has a first density at standard ambient temperature and pressure, for example, at a temperature of 25°C and a pressure of 101.325 kPa, and the chemical substance 220 has a density lower than the first density at standard ambient temperature and pressure. In other embodiments, the decomposition product has a first density at standard ambient temperature and pressure, and the chemical substance may or may not have a density lower than the first density at standard ambient temperature and pressure.

[0075] exist Figure 2In some embodiments, chemical substance 220 comprises a silane halide, such as diiodosilane. In other embodiments, the chemical substance may or may not contain a silane halide. In some embodiments, the chemical substance comprises silicon and a halogen. In some such embodiments, the chemical substance has the general formula Si. n H 2n+2−m X m Where X is a halogen, n is at least 1 to at most 3, and m is at least 1 to at most 2n+1. In some embodiments, the halogen is selected from F, Cl, Br, and I.

[0076] exist Figure 2 In some embodiments, the decomposition product 221 also comprises a silane halide, such as triiodosilane. Specifically, the decomposition product 221 is formed via halogenation of chemical substance 220. In other embodiments, the decomposition product may or may not contain a silane halide. In other embodiments, the decomposition product may or may not be formed via halogenation of chemical substance.

[0077] Although not in Figure 3 As explicitly described, chemical substance 220 may thermally decompose to form one or more additional decomposition products besides decomposition product 221, for example via dehalogenation of chemical substance 220. For example, in the case of chemical substance 220, one or more additional decomposition products may include silane iodide, which may have a lower density than chemical substance 220. In other embodiments, the chemical substance may or may not thermally decompose to form one or more additional decomposition products besides the decomposition product. In embodiments where the chemical substance thermally decomposes to form one or more additional decomposition products besides the decomposition product, the one or more additional decomposition products may be formed via any suitable reaction mechanism, such as via dehalogenation of the chemical substance.

[0078] Figure 3 A substrate processing apparatus 300 according to an embodiment is schematically depicted. Unless otherwise explicitly stated, Figure 3 The substrate processing apparatus 300 of the embodiments may include or exclude any features disclosed herein, with necessary modifications. Other embodiments may be with or without these features. Figure 3 The embodiments are the same or similar.

[0079] exist Figure 3 In one embodiment, the substrate processing apparatus 300 includes a processing chamber 310 for holding at least a portion of the substrate 311.

[0080] Figure 3The substrate processing apparatus 300 of one embodiment includes a processing gas inlet 321 for receiving processing gas 101 from an evaporation container 200 and a processing gas delivery line 330 extending between the processing gas inlet 321 and a processing chamber 310 for transferring the processing gas 101 into the processing chamber 310. Figure 3 In one embodiment, the process gas 101 contains a chemical substance 220 that can be thermally decomposed to form decomposition products 221. The substrate processing apparatus 300 also includes a gas analyzer 110 and a process gas control unit 120. The gas analyzer 110 is configured to generate a concentration signal 111 indicating the concentration of decomposition products 221 in the process gas 101, and the process gas control unit 120 is configured to receive the concentration signal 111 and generate a control signal 121 if the concentration of decomposition products 221 indicated by the concentration signal 111 is greater than a predetermined concentration threshold.

[0081] exist Figure 3 In one embodiment, the substrate processing apparatus 300 includes a evaporation container 200 coupled to a processing gas inlet 321. In other embodiments, the substrate processing apparatus may or may not include a evaporation container coupled to a processing gas inlet.

[0082] exist Figure 3 In one embodiment, the substrate processing apparatus 300 includes a container heater 340 for heating the evaporation container 200. In other embodiments, the substrate processing apparatus may or may not include such a container heater.

[0083] Figure 3 The container heater 340 in one embodiment is configured to maintain the temperature of the chemical substance 220 within the evaporation container 200 at approximately 30°C, 40°C, 50°C, 60°C, or 70°C. In some embodiments, a container heater configured to maintain the temperature of the chemical substance within the evaporation container within a specific temperature range can enable a balance between the evaporation and decomposition rates of the chemical substance. In other embodiments where the substrate processing apparatus includes a container heater, the container heater can be configured to maintain the temperature of the chemical substance within the evaporation container within any suitable temperature range, such as 0°C to 150°C, 30°C to 70°C, 40°C to 100°C, or 20°C to 90°C.

[0084] exist Figure 3 In one embodiment, the gas analyzer 110 is configured to measure the concentration of decomposition products 221 in the processed gas 101 within the processed gas delivery line 330 by performing online decomposition product concentration measurements. Specifically, Figure 3The processed gas delivery line 330 of the embodiment includes a processed gas sampling valve 331 for directing processed gas 101 from the processed gas delivery line 330 to the gas analyzer 110. Sampling of the processed gas 101 via the processed gas sampling valve 331 can be accomplished in any suitable manner, such as by repetitive, cyclic, intermittent, periodic, or continuous sampling.

[0085] In other embodiments, the gas analyzer can be configured to measure the concentration of decomposition products in the process gas within the process gas delivery line and / or evaporation container in any suitable manner, for example, by measurement in one or more lines and / or by measurement in one or more lines. For example, such as Figure 3 The dashed lines schematically illustrate that, in some embodiments, the gas analyzer may include a gas sensor 332 functionally coupled to an evaporation container to measure the concentration of decomposition products in the process gas within the evaporation container and / or a gas sensor 333 functionally coupled to a process gas delivery line to measure the concentration of decomposition products in the process gas within the process gas delivery line. In other embodiments, the gas analyzer may additionally or alternatively include one or more process gas sampling valves for directing process gas sampled from any suitable location (e.g., from the process gas delivery line and / or from the evaporation container) to the gas analyzer in any suitable manner, such as by cyclic, intermittent, periodic, or continuous sampling.

[0086] Figure 3 The gas analyzer 110 in the embodiments can be implemented as a mass spectrometer, such as a residual gas analyzer. In some embodiments, a gas analyzer implemented as a mass spectrometer can help detect minute changes in the concentration of decomposition products in the process gas. In other embodiments, the gas analyzer can be implemented in any suitable manner. For example, in some embodiments, the gas analyzer may include a mass spectrometer, an infrared gas analyzer, a thermal conductivity detector, a flame ionization detector, an electron capture detector, a vacuum ultraviolet detector, a helium ionization detector, a photoionization detector, a metal-oxide-semiconductor (MOS) sensor, and / or a pulsed discharge detector.

[0087] exist Figure 3 In some embodiments, the substrate processing apparatus 300 includes an alarm control unit 350 configured to receive a control signal 121 and issue an alarm in response to the control signal 121. In some embodiments, a substrate processing apparatus including such an alarm control unit can enable the operator to be notified of changes in the gas composition being processed, thereby initiating a manual evaporator refill or change procedure if necessary. Alternatively, a substrate processing apparatus including such an alarm control unit can enable the initiation of at least partially automated evaporator refill or change procedures or the selection of another evaporator for use by the substrate processing apparatus.

[0088] exist Figure 3 In one embodiment, the process gas delivery line includes a process gas bypass valve 334 for guiding process gas 101 through the process chamber 310. The substrate processing apparatus 300 includes a container unloading control unit 360 operatively coupled to the process gas bypass valve 334 and configured to receive a control signal 121. The container unloading control unit 360 is configured to keep the process gas bypass valve 334 open in response to the control signal 121 to vent the evaporation container 200. In some embodiments, such an arrangement allows for the automatic removal of at least a portion of any decomposition products accumulated within the evaporation container, while limiting contamination of the process chamber. In other embodiments, the process gas delivery line may or may not include such a process gas bypass valve and / or container unloading control unit. In other embodiments, wherein at least a partially automated evaporation container venting procedure is initiated in response to a control signal, the at least partially automated evaporation container venting procedure may be performed in any suitable manner.

[0089] Figure 3 The substrate processing apparatus 300 in one embodiment also includes an exhaust pump 361 fluidly connected to the processing chamber 310 for venting the processing chamber 310 and fluidly connected to a processing gas bypass valve 334 for driving processing gas 101 through the processing chamber 310. A container unloading control unit 360 is operatively coupled to the exhaust pump 361 and configured to keep the exhaust pump 361 activated for venting the evaporation container 200 in response to a control signal 121. In other embodiments, where the processing gas delivery line includes a processing gas bypass valve and a container unloading control unit, the substrate processing apparatus may or may not include such an exhaust pump operatively coupled to the container unloading control unit in this manner.

[0090] exist Figure 3 In some embodiments, the substrate processing apparatus 300 includes a storage container 370 for storing a chemical substance 220 in condensed form and a refill line 371 fluidly connected to the storage container 370 for transferring the chemical substance 220 from the storage container 370 to the evaporation container 200. In some embodiments, a substrate processing apparatus including such a storage container and a refill line can facilitate the refilling of the evaporation container after a manual or at least partially automated evaporation container emptying procedure. In other embodiments, the substrate processing apparatus may or may not include such a storage container and / or such a refill line.

[0091] Figure 3The substrate processing apparatus 300 in one embodiment also includes a refill pump 372 configured to deliver the chemical substance 220 in liquid form from the storage container 370 to the evaporation container 200. In other embodiments, where the substrate processing apparatus includes a storage container and a refill line, the substrate processing apparatus may or may not include a refill pump configured to deliver the chemical substance in liquid form from the storage container to the evaporation container. For example, in some embodiments, the substrate processing apparatus may include a refill line configured to deliver the chemical substance in gaseous form from the storage container to the evaporation container.

[0092] Figure 3 The substrate processing apparatus 300 in this embodiment is specifically implemented as a time-atomic layer deposition apparatus. In other embodiments, the substrate processing apparatus can be implemented in any suitable manner, for example, as a dry etching apparatus or a vacuum deposition apparatus, such as a chemical vapor deposition apparatus, such as a cyclic chemical vapor deposition apparatus, such as an atomic layer deposition apparatus, such as a time-atomic layer deposition apparatus.

[0093] exist Figure 3 In one embodiment, the substrate processing apparatus 300 includes a carrier gas supply 380 and a carrier gas line 381 extending between the carrier gas supply 380 and the evaporation container 200 for supplying carrier gas to the evaporation container 200. In other embodiments, the substrate processing apparatus may or may not include such a carrier gas supply and / or such a carrier gas line.

[0094] like Figure 3 The dashed lines are used to indicate this. Figure 3 The substrate processing apparatus 300 of the embodiments may further include a second processing gas inlet 322 for receiving processing gas 101 from a second evaporation container 302. In some embodiments, a substrate processing apparatus including such a second processing gas inlet can enable uninterrupted operation of the substrate processing apparatus while evaporating and / or refilling the evaporation container coupled to the processing gas inlet. In other embodiments, the substrate processing apparatus may include any suitable number (e.g., one or two or three or four, etc.) of processing gas inlets for receiving processing gas from any suitable number of evaporation containers. Throughout this disclosure, the evaporation container (e.g., Figure 2 The features of the evaporation container 200 of the embodiments and their relationship with the substrate processing equipment (e.g., Figure 3 The statements regarding the interoperability of any components of the substrate processing apparatus 300 in this embodiment can also be applied to any other evaporation container, with necessary modifications. Similarly, throughout this disclosure regarding the process gas inlet (e.g., Figure 3 The features of the processing gas inlet 321 in the embodiments and their relationship with substrate processing equipment (e.g., Figure 3The statements regarding the interoperability of any other component of the substrate processing apparatus 300 in the embodiment can also be applied to any additional processing gas inlet, with necessary modifications.

[0095] exist Figure 3 In one embodiment, the substrate processing apparatus 300 includes an active material generation unit 390 for supplying active material to the processing chamber 310. Figure 3 The active material generation unit 390 in one embodiment is specifically implemented as an in-situ plasma generation unit for generating plasma 391 in the processing chamber 310. This allows the use of active materials (such as those formed by exposing a mixture of hydrogen and nitrogen gases to plasma 391) to influence film deposition performed by the substrate processing apparatus 300. In other embodiments, the substrate processing apparatus may or may not include an active material generation unit. In embodiments where the substrate processing apparatus includes an active material generation unit, the active material generation unit may be implemented using any suitable technique, such as an in-situ plasma generation unit or a remote plasma generation unit.

[0096] Figure 4 A method 400 for monitoring the supply of process gas to a process chamber according to an embodiment is schematically depicted. Unless otherwise explicitly stated, Figure 4 The method 400 of the embodiments may include or exclude any features disclosed herein, with necessary modifications. Other embodiments may be with or without these features. Figure 4 The embodiments are the same or similar.

[0097] exist Figure 4 In one embodiment, the processing gas includes a chemical substance that can be thermally decomposed to form decomposition products, and the method 400 includes providing a processing gas 401 to be supplied to a processing chamber, measuring the concentration of decomposition products in the processing gas 405, and generating a control signal 410 if the concentration of decomposition products is greater than a predetermined concentration threshold.

[0098] like Figure 4 As shown by the dashed lines, it provides Figure 4 The method for processing gas 401 in one embodiment may include holding a chemical substance within an evaporation container 402 and allowing the chemical substance 403 to evaporate to form a processed gas. In other embodiments, the method for monitoring the supply of processed gas to a processing chamber may or may not include holding the chemical substance within an evaporation container and / or allowing the chemical substance to evaporate.

[0099] exist Figure 4 In some embodiments, the process of evaporating chemical substance 403 may include maintaining the temperature of chemical substance 404 within a temperature range of 0°C to 150°C, such as... Figure 4The figure is shown using dashed lines. In other embodiments, the process of evaporating a chemical substance may or may not include maintaining the temperature of the chemical substance within a specific temperature range. In some embodiments, the process of evaporating a chemical substance may include maintaining the temperature of the chemical substance within a temperature range of 0°C to 150°C, 30°C to 70°C, 40°C to 100°C, or 20°C to 90°C.

[0100] If dashed lines are used again as an indicator Figure 4 The process of measuring the concentration 405 of the decomposition products in one embodiment may include measuring the concentration of the decomposition products by one or more in-line measurements 406 and / or by one or more in-line measurements 407. In other embodiments, the method of measuring the concentration of the decomposition products may or may not include measuring the concentration of the decomposition products by one or more in-line measurements and / or by one or more in-line measurements.

[0101] Similarly, Figure 4 The method for measuring the concentration of decomposition product 405 in one embodiment may further include measuring the concentration of decomposition product within the evaporation container 407 and / or measuring the concentration of decomposition product downstream of the evaporation container and upstream of the processing chamber 408. In other embodiments, the method for measuring the concentration of decomposition product may or may not include measuring the concentration of decomposition product within the evaporation container and / or measuring the concentration of decomposition product downstream of the evaporation container and upstream of the processing chamber.

[0102] Again Figure 4 As shown by dashed lines, method 400 may include issuing an alarm 411 in response to a control signal, emptying an evaporator 412 in response to a control signal, refilling an evaporator 413, and / or initiating the use of a second evaporator 414 in response to a control signal for supplying process gas to the processing chamber. In other embodiments, the method for monitoring the supply of process gas to the processing chamber may or may not include issuing an alarm, emptying an evaporator, refilling an evaporator, and / or initiating the use of a second evaporator in response to a control signal.

[0103] Furthermore, as indicated again by the dashed line, method 400 may include feeding a process gas into the processing chamber 415 if the concentration of the decomposition products is less than or equal to a predetermined concentration threshold. In other embodiments, methods for monitoring the supply of process gas to the processing chamber may or may not include feeding process gas into the processing chamber.

[0104] Figure 4The method 400 of the embodiment can be implemented as a continuous process, wherein the processes of providing process gas 401 and measuring the concentration of decomposition products 405 are operated in parallel. In this case, the concentration of decomposition products can be measured, for example, repeatedly, cyclically, intermittently, periodically, or continuously, and the process gas can be fed into the processing chamber until the concentration is measured to exceed a predetermined concentration threshold. Once the concentration is measured to exceed the predetermined concentration threshold, the process gas can be transferred out of the processing chamber, the use of the evaporator to generate the process gas can be stopped, a second evaporator can be started to reduce process downtime, and the evaporator can be emptied and refilled while using the process gas containing chemicals derived from the second evaporator.

[0105] The exemplary embodiments of this disclosure described above do not limit the scope of the invention, as these embodiments are merely examples of embodiments of the invention, which are defined by the appended claims and their legal equivalents. Any equivalent embodiments are intended to fall within the scope of the invention. In fact, various modifications to this disclosure, such as alternative useful combinations of the elements, in addition to those shown and described herein, will become apparent from the description to those skilled in the art. Such modifications and embodiments are also intended to fall within the scope of the appended claims.

Claims

1. A process gas monitoring apparatus for monitoring a supply of process gas, the process gas comprising a chemical substance that is thermally decomposable to form a decomposition product, the process gas monitoring apparatus comprising: a gas analyzer configured to generate a concentration signal indicative of a concentration of the decomposition product in the process gas, and a process gas control unit configured to receive the concentration signal and to generate a control signal if the concentration of the decomposition product indicated by the concentration signal is greater than a predetermined concentration threshold.

2. A volatilization container for holding a chemical substance that is thermally decomposable to form a decomposition product, the volatilization container comprising: a housing defining an internal cavity for holding the chemical substance in condensed form, a gas analyzer configured to generate a concentration signal indicative of a concentration of the decomposition product in the internal cavity, and a process gas control unit configured to receive the concentration signal and to generate a control signal if the concentration of the decomposition product indicated by the concentration signal is greater than a predetermined concentration threshold.

3. The volatilization container of claim 2, implemented as an evaporation container.

4. The volatile container of claim 2 or 3, wherein, The volatilization container contains the chemical substance, which is held in the internal cavity.

5. The volatile container of claim 4, wherein, The decomposition product has a first molecular weight, and the chemical substance has a molecular weight that is lower than the first molecular weight.

6. The volatile container of claim 4 or 5, wherein, The chemical substance comprises a halogenated silane.

7. A substrate processing apparatus comprising: a process chamber for holding at least a portion of a substrate; a process gas inlet for receiving a process gas from a volatilization container; a process gas delivery line extending between the process gas inlet and the process chamber for transferring the process gas into the process chamber, the process gas containing a chemical substance that is thermally decomposable to form a decomposition product; a gas analyzer configured to generate a concentration signal indicative of a concentration of the decomposition product in the process gas, and a process gas control unit configured to receive the concentration signal and to generate a control signal if the concentration of the decomposition product indicated by the concentration signal is greater than a predetermined concentration threshold.

8. The substrate processing apparatus of claim 7, wherein, The substrate processing apparatus comprises a container heater for heating the volatilization container.

9. The substrate processing apparatus of claim 8, wherein, The container heater is configured to maintain a temperature of the chemical substance within the volatilization container in a temperature range of 0 °C to 150 °C.

10. The substrate processing apparatus according to any one of claims 7 to 9, wherein, The gas analyzer is configured to measure the concentration of the decomposition product in the process gas within the process gas delivery line.

11. The substrate processing apparatus according to any one of claims 7 to 10, wherein, The gas analyzer is configured to measure the concentration of the decomposition product in the process gas within the volatilization container.

12. The substrate processing apparatus according to any one of claims 7 to 11, wherein, The gas analyzer is configured to measure the concentration of the decomposition product by one or more of an in-line measurement and / or an on-line measurement.

13. The substrate processing apparatus according to any one of claims 7 to 12, wherein, The substrate processing apparatus comprises an alarm control unit configured to receive the control signal and to issue an alarm in response to the control signal.

14. The substrate processing apparatus according to any one of claims 7 to 13, wherein, The process gas delivery line comprises a process gas bypass valve for directing the process gas past the process chamber, the substrate processing apparatus comprises a container offload control unit operably coupled with the process gas bypass valve and configured to receive the control signal, and the container offload control unit is configured to keep the process gas bypass valve open to empty the volatilization container in response to the control signal.

15. The substrate processing apparatus according to any one of claims 7 to 14, wherein, The substrate processing apparatus comprises a storage container for storing the chemical substance in condensed form and a refill line fluidly coupled with the storage container for transferring the chemical substance from the storage container to the volatilization container.

16. The substrate processing apparatus according to any one of claims 7 to 15, wherein, The substrate processing apparatus comprises a second process gas inlet for receiving a process gas from a second volatilization container.

17. The substrate processing apparatus according to any of claims 7 to 16, embodied as a vacuum deposition apparatus, such as a chemical vapor deposition apparatus, e.g. a cyclic chemical vapor deposition apparatus, such as an atomic layer deposition apparatus, e.g. a time atomic layer deposition apparatus.

18. A method for monitoring a supply of a process gas into a process chamber, the method comprising: - providing a process gas to be supplied into a process chamber, the process gas comprising a chemical substance which is thermally decomposable to form a decomposition product; - measuring a concentration of the decomposition product in the process gas; and - generating a control signal if the concentration of the decomposition product is greater than a predetermined concentration threshold.

19. The method of claim 18, wherein, Providing the process gas comprises maintaining the chemical substance within a volatilization container and volatilizing the chemical substance to form the process gas.

20. The method of claim 19, wherein, Volatilizing the chemical substance comprises maintaining a temperature of the chemical substance within a temperature range of 0 °C to 150 °C.

21. The method of any one of claims 18-20, wherein, Measuring the concentration of the decomposition product comprises measuring the concentration of the decomposition product by one or more in-line measurements and / or measuring the concentration of the decomposition product by one or more on-line measurements.

22. The method of any one of claims 18-21, wherein, Measuring the concentration of the decomposition product comprises measuring the concentration of the decomposition product within the volatilization container.

23. The method of any one of claims 18-22, wherein, Measuring the concentration of the decomposition product comprises measuring the concentration of the decomposition product downstream of the volatilization container and upstream of the process chamber.

24. The method of any one of claims 18-23, wherein, The method comprises issuing an alarm in response to the control signal.

25. The method of any one of claims 18-24, wherein, The method comprises evacuating the volatilization container in response to the control signal.

26. The method of any one of claims 18-25, wherein, The method comprises refilling the volatilization container in response to the control signal.

27. The method of any one of claims 18-26, wherein, The method comprises starting to use a second volatilization container for supplying the process gas into the process chamber in response to the control signal.

28. The method of any one of claims 18-27, wherein, The method comprises feeding the process gas into the process chamber if the concentration of the decomposition product is less than or equal to the predetermined concentration threshold.

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