Wet etching apparatus and metal mask

Abstract

The application relates to the technical field of display, and provides a wet etching equipment and a metal mask plate, which comprises at least three etching areas and two sensing areas, the first etching area, the first sensing area, the second etching area, the second sensing area and the third etching area are sequentially connected; the etching area is used for etching; the sensing area is used for detecting the width direction uniformity and / or the advancing direction uniformity of the mask plate after etching; if the second etching area is used for second etching according to the result of the width direction uniformity detected by the first sensing area, then the third etching area is used for third etching according to the result of the advancing direction uniformity detected by the second sensing area; if the second etching area is used for second etching according to the result of the advancing direction uniformity detected by the first sensing area, then the third etching area is used for third etching according to the result of the width direction uniformity detected by the second sensing area, and the problem of poor in-plane etching uniformity of the mask plate is more efficiently solved.

Description

A wet etching apparatus and a metal mask Technical Field

[0001] This invention relates to the field of display technology, and in particular to a wet etching apparatus and a metal mask. Background Technology

[0002] In the field of display technology, FMM (Fine Metal Mask) is a key material used in the manufacture of OLED (Organic Light Emitting Diode) panels. It is mainly used in the vacuum evaporation process to deposit RGB (red, green, and blue) sub-pixel materials onto the display panel through the pixel opening areas on the FMM, thereby achieving high-resolution display.

[0003] In FMM (Foil Mask) fabrication, wet etching is used to create the opening areas. The etching amount is typically controlled by adjusting the etching time, assuming a constant etching rate. However, wet etching usually employs a nozzle array with multiple nozzles. The etching rate on the substrate fluctuates due to the recycling of the etching solution and subtle changes in spray pressure. This is highly detrimental to the uniformity of in-plane etching across the entire mask, and since this variation occurs during the etching process, the monitoring system cannot detect it in real time. Current technology addresses this uniformity issue by inspecting the mask after wet etching and then adjusting the wet etching equipment accordingly to improve the uniformity of in-plane etching for subsequent masks on the production line. However, this method inevitably sacrifices a batch of masks, affecting overall yield, and the adjustment efficiency is relatively low, impacting equipment uptime.

[0004] Therefore, a more efficient solution is needed to address the problem of poor etching uniformity within the mask surface. Summary of the Invention

[0005] The purpose of this invention is to provide a wet etching apparatus and a metal mask, which solves the technical problems of poor etching uniformity and low adjustment efficiency in the prior art.

[0006] In a first aspect, embodiments of the present invention provide a wet etching apparatus, comprising: at least three etching zones and at least two sensing zones, wherein the three etching zones include a first etching zone, a second etching zone, and a third etching zone, and the two sensing zones include a first sensing zone and a second sensing zone, wherein the first etching zone, the first sensing zone, the second etching zone, the second sensing zone, and the third etching zone are sequentially connected; the first etching zone is used to perform a first etching, and the first sensing zone is used to detect the uniformity of the mask in the width direction and / or the uniformity of the travel direction after the first etching; the second sensing zone is used to detect the uniformity of the mask in the width direction and / or the uniformity of the travel direction after a second etching; if the second etching zone is used to perform a second etching based on the result of the uniformity of the width direction detected by the first sensing zone, then the third etching zone is used to perform a third etching based on the result of the uniformity of the travel direction detected by the second sensing zone; if the second etching zone is used to perform a second etching based on the result of the uniformity of the travel direction detected by the first sensing zone, then the third etching zone is used to perform a third etching based on the result of the uniformity of the width direction detected by the second sensing zone.

[0007] Furthermore, the sensing area includes multiple light intensity sensors.

[0008] Furthermore, each sensing area includes eight light intensity sensors, the lines connecting the eight light intensity sensors form a rectangle, and the eight light intensity sensors are located at the four vertices and the midpoints of the four sides of the rectangle, respectively. The positions of the light intensity sensors are used to correspond one-to-one with the positions of the marked through holes on the mask.

[0009] Furthermore, determining the uniformity of the width direction includes calculating the average light sensitivity of light intensity sensors located on a straight line parallel to the direction of travel, and then comparing the average light sensitivity values; determining the uniformity of the direction of travel includes calculating the average light sensitivity of light intensity sensors parallel to the width direction, and then comparing the average light sensitivity values.

[0010] Furthermore, when the uniformity of the mask detected by the first sensing area in the travel direction is less than the uniformity in the width direction, the second etching area is used to perform a second etching based on the result of the uniformity in the travel direction detected by the first sensing area, and the third etching area is used to perform a third etching based on the result of the uniformity in the width direction detected by the second sensing area; when the uniformity of the mask detected by the first sensing area in the travel direction is greater than the uniformity in the width direction, the second etching area is used to perform a second etching based on the result of the uniformity in the width direction detected by the first sensing area, and the third etching area is used to perform a third etching based on the result of the uniformity in the travel direction detected by the second sensing area.

[0011] Furthermore, the uniformity of the width direction is adjusted by adjusting the nozzle spray pressure in the etching area; the uniformity of the travel direction is adjusted by adjusting the nozzle oscillation frequency in the etching area.

[0012] Furthermore, after the sensing area detection is completed, the mask can only reach the etching area after 1 to 10 seconds.

[0013] Furthermore, the position of the light intensity sensor can be moved.

[0014] Furthermore, it also includes a third sensing area, which is used to detect the uniformity of the mask in the width direction and the uniformity of the travel direction after the third etching.

[0015] Secondly, embodiments of the present invention also provide a metal photomask manufactured using a wet etching apparatus as described in any of the preceding claims.

[0016] The embodiments of the present invention have at least the following technical effects:

[0017] This invention provides a wet etching apparatus in which a photomask sequentially passes through a first etching area, a first sensing area, a second etching area, a second sensing area, and a third etching area. After undergoing a first etching in the first etching area, the photomask is conveyed to the first sensing area. The first sensing area can obtain the uniformity of the etched pixel vias in the traveling direction or the width direction, or the uniformity in both the traveling direction and the width direction. Subsequently, the photomask is conveyed to the second etching area, where the etching process is based on the uniformity in the traveling direction or the width direction detected by the first sensing area. The uniformity of the mask is adjusted to improve the uniformity in the travel direction or the width direction. Then, the mask is conveyed to the second sensing area, where the uniformity in the travel direction or the width direction after the second etching can be obtained, or the uniformity in both the travel direction and the width direction can be obtained. Then, the mask is conveyed to the third etching area, where the third etching area is adjusted according to the uniformity in the travel direction or the width direction detected by the second sensing area to improve the uniformity in the travel direction or the width direction.

[0018] Specifically, if the second etching area is adjusted to improve the uniformity in the travel direction detected by the first sensing area based on the uniformity of the mask in the travel direction, then the third etching area is adjusted to improve the uniformity in the width direction based on the uniformity of the mask in the width direction detected by the second sensing area. Similarly, if the second etching area is adjusted to improve the uniformity in the width direction detected by the first sensing area, then the third etching area is adjusted to improve the uniformity in the travel direction detected by the second sensing area. In other words, uniformity in one or two directions can be obtained through the sensing area, but the second and third etching areas primarily adjust the uniformity of the mask in different directions, respectively.

[0019] In this embodiment, by setting at least three etching areas and at least two sensing areas, and by adjusting the uniformity of the mask in different directions in the second and third etching areas respectively, the mask can obtain timely detection and adjustment of etching uniformity during the etching process, thereby minimizing the possibility of defective products, improving the overall product yield and production efficiency, and more efficiently solving the problem of poor etching uniformity within the mask surface. Attached Figure Description

[0020] To more clearly illustrate the specific embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the specific embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of the present invention. For those skilled in the art, other drawings can be obtained from these drawings without creative effort.

[0021] Figure 1 is a schematic diagram of the positional structure of a wet etching device according to an embodiment of the present invention;

[0022] Figure 2 is a schematic diagram of a mask structure provided in an embodiment of the present invention;

[0023] Figure 3 is a schematic diagram of the location structure of a second wet etching device provided in an embodiment of the present invention.

[0024] Icons: 3-Mask; 11-First Etching Area; 12-Second Etching Area; 13-Third Etching Area; 21-First Sensing Area; 22-Second Sensing Area; 23-Third Sensing Area; 30-Mask Pixel Area; 200-Light Intensity Sensor; 300-Marked Through Hole. Detailed Implementation

[0025] The technical solution of the present invention will be clearly and completely described below with reference to the embodiments. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0026] It will be understood by those skilled in the art that, unless otherwise defined, all terms used herein (including technical and scientific terms) have the same meaning as commonly understood by one of ordinary skill in the art to which this invention pertains. It should also be understood that terms such as those defined in general dictionaries should be understood to have the same meaning as in the context of the prior art, and should not be interpreted in an idealized or overly formal sense unless specifically defined as herein.

[0027] Those skilled in the art will understand that, unless specifically stated otherwise, the singular forms “a,” “an,” “the,” and “the” used herein may also include the plural forms. It should be further understood that the term “comprising” as used in this specification means the presence of the stated features, integers, steps, operations, elements, and / or components, but does not exclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or combinations thereof. The term “and / or” as used herein includes all or any units and all combinations of one or more associated listed items.

[0028] Firstly, referring to Figures 1 and 2, an embodiment of the present invention provides a wet etching apparatus, comprising: at least three etching zones and at least two sensing zones. The three etching zones include a first etching zone 11, a second etching zone 12, and a third etching zone 13. The two sensing zones include a first sensing zone 21 and a second sensing zone 22. The first etching zone 11, the first sensing zone 21, the second etching zone 12, the second sensing zone 22, and the third etching zone 13 are connected sequentially. The first etching zone 11 is used for performing a first etching. The first sensing zone 21 is used to detect the uniformity of the mask 3 in the width direction and / or the uniformity of the travel direction after the first etching. The second sensing zone 22 is used to detect the uniformity of the mask in the width direction and / or the uniformity of the travel direction after the second etching. If the second etching area 12 is used for a second etching based on the result of the uniformity in the width direction detected by the first sensing area 21, then the third etching area 13 is used for a third etching based on the result of the uniformity in the travel direction detected by the second sensing area 22; if the second etching area 12 is used for a second etching based on the result of the uniformity in the travel direction detected by the first sensing area 21, then the third etching area 13 is used for a third etching based on the result of the uniformity in the width direction detected by the second sensing area 22.

[0029] In this embodiment, the first etching area 11, the first sensing area 21, the second etching area 12, the second sensing area 22, and the third etching area 13 of the wet etching equipment are connected in sequence. The mask 3 also passes through the first etching area 11, the first sensing area 21, the second etching area 12, the second sensing area 22, and the third etching area 13 in sequence. After the first etching in the first etching area 11, it is conveyed to the first sensing area 21. In Figures 1 and 2, the X direction is the travel direction and the Y direction is the width direction. Through the first sensing area 21, the uniformity of the pixel vias on the mask after etching in the X direction or the Y direction, or the uniformity in the X direction and the uniformity in the Y direction, can be obtained. Afterward, the mask 3 is conveyed to the second etching area 11. 2. The second etching area 12 is adjusted according to the uniformity of the mask 3 in the X direction or Y direction detected by the first sensing area 21, so that the uniformity in the X direction or Y direction is better. Then, the mask 3 is transferred to the second sensing area 22, through which the uniformity in the X direction or Y direction after the second etching can be obtained, or the uniformity in the X direction and the uniformity in the Y direction can be obtained. Then, the mask 3 is transferred to the third etching area 13, and the third etching area 13 is adjusted according to the uniformity in the X direction or Y direction detected by the second sensing area 22, so that the uniformity in the X direction or Y direction is better.

[0030] Specifically, if the second etching area 12 is adjusted based on the uniformity of the mask 3 in the X direction detected by the first sensing area 21 to improve the uniformity in the X direction, then the third etching area 13 is adjusted based on the uniformity of the mask 3 in the Y direction detected by the second sensing area 22 to improve the uniformity in the Y direction; similarly, if the second etching area 12 is adjusted based on the uniformity of the mask 3 in the Y direction detected by the first sensing area 21 to improve the uniformity in the Y direction, then the third etching area 13 is adjusted based on the uniformity of the mask 3 in the X direction detected by the second sensing area 22 to improve the uniformity in the X direction. That is, uniformity in one or two directions can be obtained through the sensing areas, but the second etching area 12 and the third etching area 13 primarily adjust the uniformity of the mask 3 in different directions, respectively. This is mainly because in wet etching, there are many factors that can affect the uniformity of the mask, including the conveying rate, etching time, etching solution concentration, solution circulation speed, nozzle pressure, nozzle oscillation frequency, etc. Therefore, it is very difficult to adjust the uniformity in both the X and Y directions at the same time. Moreover, adjusting multiple influencing factors at the same time will sacrifice the overall uniformity. Therefore, in this embodiment, a step-by-step adjustment method is adopted, which makes it easier to improve the overall etching uniformity of the mask.

[0031] In this embodiment, by setting at least three etching areas and at least two sensing areas, and by performing uniformity adjustments on the mask in different directions in the second etching area 12 and the third etching area 13 respectively, the mask can obtain timely detection and adjustment of etching uniformity during the etching process, thereby minimizing the possibility of defective products, improving the overall product yield and production efficiency, and more efficiently solving the problem of poor etching uniformity within the mask surface.

[0032] Optionally, the sensing area includes multiple light intensity sensors. In this embodiment, the specific sensing method selected is to use light intensity sensors. These light intensity sensors can detect the intensity of light passing through the vias on the mask. If the etching uniformity of the vias is good, then the light intensity detected by these light intensity sensors should tend to be consistent. If the etching uniformity of the vias is poor, then the light intensity detected by these light intensity sensors will also have deviations.

[0033] Optionally, any sensing area includes 8 light intensity sensors 200. The lines connecting the 8 light intensity sensors 200 form a rectangle. The 8 light intensity sensors 200 are located at the four vertices and the midpoints of the four sides of the rectangle, respectively. The positions of the light intensity sensors 200 correspond one-to-one with the positions of the marked through holes 300 on the mask 3. In this embodiment, each sensing area should include at least eight light intensity sensors 200. Marked vias 300 are used on the mask 3 instead of actual pixel vias for detection because the pixel vias within the mask pixel area 30 are very densely distributed, which may interfere with the detection of the light intensity sensors 200. Therefore, eight marked vias of the same size as the pixel vias are designed around the perimeter of the mask pixel area 30. The mask pixel area 30 is typically rectangular, and these eight marked vias are located at the four corners and the middle of the four sides of the mask pixel area 30. The positions of the eight light intensity sensors 200 correspond one-to-one with the positions of the marked vias 300 on the mask. The lines connecting the eight light intensity sensors 200 also form a rectangle, located at the four vertices and the midpoints of the four sides of the rectangle. The uniformity of the pixel vias on the entire mask is obtained by detecting the marked vias 300. It should be noted that eight light intensity sensors 200 are the minimum requirement; more light intensity sensors can be used as needed to achieve more accurate detection.

[0034] Optionally, determining the uniformity of the width direction includes calculating the average light sensitivity of light intensity sensors located on straight lines parallel to the direction of travel, and then comparing the average light sensitivity values; determining the uniformity of the direction of travel includes calculating the average light sensitivity of light intensity sensors parallel to the width direction, and then comparing the average light sensitivity values. In this embodiment, taking the distribution of light intensity sensors 200 in the first sensing area 21 as an example, the straight lines parallel to the direction of travel include S1, S2, and S3. When determining the uniformity of the width direction, the average light sensitivity values ​​of the three light intensity sensors 200 located on line S1, the two light intensity sensors 200 located on line S2, and the three light intensity sensors 200 located on line S3 are compared. If the three values ​​are the same or the difference between any two of the three values ​​is less than or equal to the light sensitivity difference threshold, then the uniformity of the width direction is considered qualified; otherwise, it is considered unqualified. If the light intensity is not uniform, adjustments will be made during subsequent etching. The straight lines parallel to the width direction include L1, L2, and L3. When determining the uniformity of the travel direction, the average light sensitivity of the three light intensity sensors 200 located on line L1, the average light sensitivity of the two light intensity sensors 200 located on line L2, and the average light sensitivity of the three light intensity sensors 200 located on line L3 are compared. If the three values ​​are the same, or the difference between any two of the three values ​​is less than or equal to the light sensitivity difference threshold, the uniformity of the travel direction is considered acceptable. If it is unacceptable, adjustments will be made during subsequent etching. It should be noted that the straight lines S1~S3 and L1~L3 in the diagram are only for illustrating the positions of the light intensity sensors and do not represent that the straight lines S1~S3 and L1~L3 can be seen on the actual device.

[0035] Optionally, when the uniformity of the mask in the travel direction detected by the first sensing area 21 is less than the uniformity in the width direction, the second etching area 12 is used to perform a second etching based on the result of the uniformity in the travel direction detected by the first sensing area 21, and the third etching area 13 is used to perform a third etching based on the result of the uniformity in the width direction detected by the second sensing area 22. In this embodiment, if the uniformity of the mask 3 detected by the first sensing area 21 in the traveling direction is less than the uniformity in the width direction, and the uniformity in the traveling direction does not meet the specifications, it indicates that the uniformity in the traveling direction is worse. Specifically, the maximum difference in the average light sensitivity between L1, L2, and L3 is greater than the maximum difference in the average light sensitivity between S1, S2, and S3, and the minimum difference in the average light sensitivity between L1, L2, and L3 is greater than the light sensitivity difference threshold. In this case, the uniformity in the traveling direction should be adjusted in the second etching area 12 first, so that the minimum difference in the average light sensitivity between L1, L2, and L3 is less than or equal to the light sensitivity difference threshold. After detection by the second sensing area 22, the uniformity in the width direction is adjusted in the third etching area 13 according to the detection result of the second sensing area 22.

[0036] Optionally, when the uniformity of the mask in the traveling direction detected by the first sensing area 21 is greater than the uniformity in the width direction, the second etching area 12 performs a second etching based on the result of the uniformity in the width direction detected by the first sensing area 21, and the third etching area 13 performs a third etching based on the result of the uniformity in the traveling direction detected by the second sensing area 22. In this embodiment, if the uniformity of the mask 3 detected by the first sensing area 21 in the traveling direction is greater than its uniformity in the width direction, and the uniformity in the width direction does not meet the specifications, it indicates that the uniformity in the width direction is worse. Specifically, this means that the maximum difference in the average light sensitivity between L1, L2, and L3 is less than the maximum difference in the average light sensitivity between S1, S2, and S3, and the minimum difference in the average light sensitivity between S1, S2, and S3 is greater than the light sensitivity difference threshold. In this case, the uniformity in the width direction should first be adjusted in the second etching area 12 so that the minimum difference in the average light sensitivity between S1, S2, and S3 is less than or equal to the light sensitivity difference threshold. Then, after detection by the second sensing area 22, the uniformity in the traveling direction is adjusted in the third etching area 13 based on the detection results of the second sensing area 22. In general, the adjustment method is to adjust the direction with worse uniformity first. It should be noted that the sensitivity difference threshold is a value that needs to be set in the equipment in advance, and an appropriate value should be selected according to the situation in the production process.

[0037] It should be noted that if the uniformity of the mask detected by the first sensing area 21 in the traveling direction is equal to the uniformity in the width direction, and neither of them meets the uniformity specification, then the uniformity in the width direction should be adjusted first, and then the uniformity in the traveling direction should be adjusted, or the uniformity in the traveling direction should be adjusted first, and then the uniformity in the width direction should be adjusted.

[0038] Optionally, the uniformity of width can be adjusted by adjusting the nozzle spray pressure in the etching zone; the uniformity of travel direction can be adjusted by adjusting the nozzle oscillation frequency in the etching zone. In this embodiment, the nozzle spray pressure, which has the greatest impact on the uniformity of the width direction, is selected as the adjustment object to adjust the uniformity of the width direction. Specifically, the average light sensitivity of all light intensity sensors 200 is used as the standard. The average light sensitivity of S1, S2, and S3 is compared with the average light sensitivity of all light intensity sensors 200. The nozzle array is also divided into three regions A1, A2, and A3 parallel to the direction of travel, corresponding to the average light sensitivity of S1, S2, and S3, respectively. If the average light sensitivity of a certain line is greater than the average light sensitivity of all light intensity sensors, the nozzle spray pressure of that region is reduced; if the average light sensitivity of a certain line is less than the average light sensitivity of all light intensity sensors, the nozzle spray pressure of that region is increased. The nozzle oscillation frequency, which has the greatest impact on the uniformity of the direction of travel, is selected as the adjustment object to adjust the uniformity of the direction of travel. Specifically, the average light sensitivity of all light intensity sensors 200 is used as the standard to adjust the uniformity of the width direction. The average light intensity is used as a standard. The average light intensity on L1, L2, and L3 is compared with the average light intensity of all light intensity sensors 200. The mask is also divided into three regions B1, B2, and B3 parallel to the width direction, corresponding to the average light intensity on L1, L2, and L3, respectively. If the average light intensity on a certain line is greater than the average light intensity of all light intensity sensors 200, then when that region of the mask reaches the nozzle array, the swing frequency of the nozzle array will change continuously as the mask moves forward. That is, when that region reaches below a column of nozzles in the nozzle array, the swing frequency of that column of nozzles needs to be reduced. If the average light intensity on a certain line is less than the average light intensity of all light intensity sensors, then when that region of the corresponding mask reaches below a column of nozzles in the nozzle array, the swing frequency of that column of nozzles needs to be increased. Increasing the swing frequency of the nozzles will accelerate the chemical exchange rate and the etching rate will also be faster.

[0039] It should be noted that if the uniformity of the mask in both the width direction and the travel direction is qualified, the second etching area 12 and the third etching area 13 will still etch the mask. The difference is that the second etching area 12 and the third etching area 13 will not adjust the spraying or oscillation frequency in real time according to the uniformity of the width direction and the travel direction, but will only etch according to the original settings of the equipment.

[0040] Optionally, after the sensing area detection is completed, the mask can only reach the etching area after 1 to 10 seconds. In this embodiment, after the sensing area detection is completed, a response time needs to be allowed for the subsequent adjustment of the etching area, with a minimum of 1 second and a maximum of 10 seconds. Preferably, the length of the first sensing area 21 and the second sensing area 22 in the traveling direction is greater than the length of the mask traveling between them, but less than or equal to twice the length of the mask. Moreover, the light intensity sensor is preferably located at the point where the mask just completely enters the sensing area, corresponding one-to-one with the marked through holes on the mask. This ensures that after the detection is completed, the mask continues to travel for a period of time before reaching the etching area, allowing response time for adjustment in the etching area.

[0041] Optionally, the position of the light intensity sensor 200 can be moved. In this embodiment, in order to adapt to more mask templates of various shapes and sizes, the position of the light intensity sensor 200 is adjustable and can be appropriately adjusted according to the position of the marked through holes on the mask template.

[0042] Optionally, a third sensing area 23 is also included. The third sensing area 23 is used to detect the uniformity of the mask in the width direction and the uniformity of the travel direction after the third etching. In this embodiment, please refer to Figure 3. A third sensing area 23 is connected after the third etching area 13. By detecting the uniformity of the mask in the width direction and the uniformity of the travel direction after the third etching through the third sensing area 23, the overall uniformity of the mask can be further confirmed. If there are still problems after the third etching, it is also convenient to detect and adjust them in time.

[0043] Secondly, embodiments of the present invention provide a metal photomask manufactured using the wet etching equipment as described in the first aspect. The metal photomask in this embodiment is manufactured using the wet etching equipment described in the first aspect. Details not covered in this embodiment are detailed in the first aspect and in the specific descriptions of Figures 1 to 3, and will not be repeated here.

[0044] Those skilled in the art will understand that the steps, measures, and schemes in the various operations, methods, and processes discussed in this invention can be alternated, modified, combined, or deleted. Furthermore, other steps, measures, and schemes in the various operations, methods, and processes discussed in this invention can also be alternated, modified, rearranged, decomposed, combined, or deleted. Furthermore, steps, measures, and schemes in the prior art that are similar to those disclosed in this invention can also be alternated, modified, rearranged, decomposed, combined, or deleted.

[0045] In the description of this invention, it should be understood that the terms "center", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this invention.

[0046] The terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this invention, unless otherwise stated, "a plurality of" means two or more.

[0047] In the description of this invention, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal communication between two components. Those skilled in the art can understand the specific meaning of the above terms in this invention based on the specific circumstances.

[0048] In the description of this specification, specific features, structures, materials, or characteristics may be combined in any suitable manner in one or more embodiments or examples.

[0049] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, and not to limit them; although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some or all of the technical features; and these modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A wet etching apparatus, characterized in that, include: The mask comprises at least three etching areas and at least two sensing areas. The three etching areas include a first etching area, a second etching area, and a third etching area. The two sensing areas include a first sensing area and a second sensing area. The first etching area, the first sensing area, the second etching area, the second sensing area, and the third etching area are connected sequentially. The first etching area, the second etching area, and the third etching area are used to perform a first, second, and third etching on the mask in sequence. The first sensing area is used to detect the uniformity of the mask in the width direction and / or the uniformity of the travel direction after the first etching. The second sensing area is used to detect the uniformity of the mask in the width direction and / or the uniformity of the travel direction after the second etching. If the second etching area is used to perform a second etching based on the result of the uniformity in the width direction detected by the first sensing area, then the third etching area is used to perform a third etching based on the result of the uniformity in the travel direction detected by the second sensing area; if the second etching area is used to perform a second etching based on the result of the uniformity in the travel direction detected by the first sensing area, then the third etching area is used to perform a third etching based on the result of the uniformity in the width direction detected by the second sensing area.

2. The wet etching equipment according to claim 1, characterized in that, The sensing area includes multiple light intensity sensors.

3. The wet etching equipment according to claim 2, characterized in that, Each sensing area includes eight light intensity sensors. The lines connecting the eight light intensity sensors form a rectangle. The eight light intensity sensors are located at the four vertices and the midpoints of the four sides of the rectangle, respectively. The positions of the light intensity sensors correspond one-to-one with the positions of the marked through holes on the photomask.

4. The wet etching equipment according to claim 3, characterized in that, Determining the uniformity of the width direction includes calculating the average light sensitivity of light intensity sensors located on a straight line parallel to the direction of travel, and then comparing the average light sensitivity values; determining the uniformity of the direction of travel includes calculating the average light sensitivity of light intensity sensors parallel to the width direction, and then comparing the average light sensitivity values.

5. The wet etching equipment according to claim 4, characterized in that, When the uniformity of the mask detected by the first sensing area in the direction of travel is less than the uniformity in the width direction, the second etching area is used to perform a second etching based on the result of the uniformity in the direction of travel detected by the first sensing area, and the third etching area is used to perform a third etching based on the result of the uniformity in the width direction detected by the second sensing area; when the uniformity of the mask detected by the first sensing area in the direction of travel is greater than the uniformity in the width direction, the second etching area is used to perform a second etching based on the result of the uniformity in the width direction detected by the first sensing area, and the third etching area is used to perform a third etching based on the result of the uniformity in the direction of travel detected by the second sensing area.

6. The wet etching equipment according to claim 5, characterized in that, The uniformity of the width direction is adjusted by adjusting the nozzle spray pressure in the etching area; the uniformity of the travel direction is adjusted by adjusting the nozzle oscillation frequency in the etching area.

7. The wet etching equipment according to claim 5, characterized in that, After the detection in the sensing area is completed, the mask can reach the etching area after 1 to 10 seconds.

8. The wet etching equipment according to claim 2, characterized in that, The position of the light intensity sensor can be moved.

9. The wet etching equipment according to claim 1, characterized in that, It also includes a third sensing area, which is used to detect the uniformity of the mask in the width direction and the uniformity of the travel direction after the third etching.

10. A metal photomask, characterized in that, Manufactured using the wet etching equipment as described in any one of claims 1 to 9.

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