Cleaning method of sputtering equipment, sputtering method and sputtering system

Abstract

The invention provides a cleaning method of sputtering equipment, a sputtering method and a sputtering system. The cleaning method of the sputtering apparatus includes: removing a portion of a first material deposited in the sputtering apparatus; and after removing a portion of the first material deposited in the sputtering apparatus, oxidizing a remaining portion of the first material deposited in the sputtering apparatus. A sputtering apparatus includes a process chamber providing a process space, a stage within the process space, a discharge tube providing a plasma discharge space extending to the process space, and a radio frequency (RF) coil wound around the discharge tube. Oxidizing a remaining portion of the first material deposited in the sputtering apparatus includes supplying an oxygen gas to the plasma discharge space.

Description

[0001] Cross-reference to related applications

[0002] This application claims priority to and all benefits derived therefrom of Korean Patent Application No. 10-2024-0093610, filed on July 16, 2024, the contents of which are incorporated herein by reference in their entirety. Technical Field

[0003] The disclosure herein relates to cleaning methods for sputtering equipment, including sputtering methods and sputtering systems thereof. Background Technology

[0004] Electronic devices that provide images to users (such as smartphones, digital cameras, laptops, navigators, and smart TVs) include display devices used to display images.

[0005] Display devices generate images and provide those images to users via a display screen. Display devices can be manufactured using various processes. For example, a display device can be manufactured relative to a substrate using processes such as etching, deposition, and cleaning. An etching process on a substrate can be a process that removes a portion of the material from the substrate. For this purpose, wet etching processes and / or dry etching processes can be used. Summary of the Invention

[0006] This disclosure provides a cleaning method for a sputtering apparatus capable of removing redeposited material in a process chamber, a sputtering method therein, and a sputtering system.

[0007] Embodiments of this disclosure also provide a cleaning method for sputtering equipment that can prevent subsequent processes from being interrupted by material redeposited in the process chamber, a sputtering method therein, and a sputtering system.

[0008] Embodiments of the present invention provide a cleaning method for a sputtering apparatus, comprising: removing a portion of a first material deposited in the sputtering apparatus; and oxidizing the remaining portion of the first material deposited in the sputtering apparatus after removing the portion of the first material deposited in the sputtering apparatus, wherein the sputtering apparatus includes: a process chamber providing a process space, a workbench within the process space, a discharge tube providing a plasma discharge space extending into the process space, and a radio frequency (RF) coil wound around the discharge tube, wherein oxidizing the remaining portion of the first material deposited in the sputtering apparatus comprises: supplying oxygen gas to the plasma discharge space.

[0009] In one embodiment, oxidizing the remaining portion of the first material deposited in the sputtering apparatus further includes raising the temperature of the discharge tube to a first temperature or higher.

[0010] In this embodiment, the first temperature is approximately 120 degrees Celsius to approximately 180 degrees Celsius.

[0011] In embodiments, the first material includes copper (Cu).

[0012] In embodiments, oxidizing the remaining portion of the first material deposited in the sputtering apparatus further includes applying radio frequency power to the radio frequency coil.

[0013] In embodiments, the radio frequency power is about 0.5 megahertz to about 10.0 megahertz.

[0014] In embodiments, oxidizing the remaining portion of the first material deposited in the sputtering apparatus further includes not applying a bias power to the workpiece.

[0015] In embodiments, removing a portion of the first material deposited in the sputtering apparatus includes supplying argon (Ar) gas to the plasma discharge space.

[0016] In embodiments, oxidizing the remaining portion of the first material deposited in the sputtering apparatus further includes placing a dummy substrate on the workpiece.

[0017] Embodiments of the inventive concept provide a sputtering method, including etching a substrate using a sputtering apparatus; removing the substrate from the sputtering apparatus; and cleaning the sputtering apparatus from which the substrate was removed, wherein the sputtering apparatus includes a process chamber providing a process space; a workpiece within the process space; a discharge tube providing a plasma discharge space extending into the process space; and a radio frequency coil wrapped around the discharge tube, wherein cleaning the sputtering apparatus includes supplying an oxygen gas into the sputtering apparatus to oxidize a first material deposited in the sputtering apparatus.

[0018] In embodiments, etching the substrate using the sputtering apparatus includes removing copper (Cu) in the substrate to etch the substrate, wherein the first material includes copper (Cu).

[0019] In embodiments, etching the substrate using the sputtering apparatus includes supplying argon (Ar) gas to the plasma discharge space.

[0020] In embodiments, cleaning the sputtering apparatus further includes, prior to oxidizing the first material deposited in the sputtering apparatus, supplying argon (Ar) gas to the plasma discharge space to remove a portion of the first material deposited in the sputtering apparatus.

[0021] In embodiments, etching the substrate using the sputtering apparatus includes applying a first radio frequency power to the radio frequency coil, and oxidizing the first material deposited in the sputtering apparatus includes applying a second radio frequency power to the radio frequency coil, wherein a frequency of the second radio frequency power is less than a frequency of the first radio frequency power.

[0022] In an embodiment, etching a substrate using the sputtering apparatus includes applying a bias power to the worktable, and oxidizing the first material deposited in the sputtering apparatus includes not applying the bias power to the worktable.

[0023] In an embodiment, a temperature of the discharge tube when oxidizing the first material deposited in the sputtering apparatus is higher than a temperature of the discharge tube when etching a substrate using the sputtering apparatus.

[0024] In an embodiment, oxidizing the first material deposited in the sputtering apparatus includes placing a dummy substrate on the worktable from which the substrate is removed.

[0025] In an embodiment of the inventive concept, a sputtering system includes a sputtering apparatus, a process gas supply device that supplies a process gas to the sputtering apparatus, and an oxygen gas supply device that supplies an oxygen gas to the sputtering apparatus, wherein the sputtering apparatus includes a process chamber that provides a process space, a worktable within the process space, a discharge tube that provides a plasma discharge space extending to the process space, an RF coil that is wound around the discharge tube, and a heating device that heats the discharge tube.

[0026] In an embodiment, the heating device includes at least one of: an infrared heating device that irradiates infrared rays to the plasma discharge space; a heating module connected to one end of the discharge tube; and a heating wire coupled to the discharge tube.

[0027] In an embodiment, the process gas supply device supplies an argon (Ar) gas to the plasma discharge space. BRIEF DESCRIPTION OF DRAWINGS

[0028] The accompanying drawings, which are included to provide a further understanding of the inventive concept and are incorporated in and constitute a part of this specification, illustrate embodiments of the inventive concept and together with the description serve to explain the inventive concept. In the drawings:

[0029] Figure 1 is a cross-sectional view of an embodiment of a sputtering system according to the inventive concept;

[0030] Figure 2 is Figure 1 is a magnified cross-sectional view of a region X of

[0031] Figure 3 is a flowchart illustrating an embodiment of a sputtering method according to the inventive concept;

[0032] Figure 4 is a flowchart illustrating an embodiment of a sputtering apparatus cleaning method according to the inventive concept; and

[0033] Figures 5 to 12 is a cross-sectional view sequentially illustrating a sputtering method according to Figure 3 the flowchart of DETAILED DESCRIPTION

[0034] In this specification, it will be understood that when a component (or a region, layer, part) is referred to as being "on" or "connected to" or "coupled to" another component, it can be directly on or connected / coupled to the other component or intervening third component can be present.

[0035] Throughout this specification, like reference numerals can refer to like elements throughout the description and the figures. Also, in the drawings, the thickness, proportions and dimensions of components can be exaggerated for clarity. The term "and / or" includes any and all combinations of one or more of the associated listed items.

[0036] Although the terms "first", "second", etc. can be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another. For example, a component referred to as a first element in one embodiment can be referred to as a second element in another embodiment without departing from the scope of the claims attached hereto. Singular forms also include plural forms unless the context clearly indicates otherwise.

[0037] Also, "under", "below", "above", "upper", and like phrases are used to explain the relative positioning relationship of components shown in the drawings. These terms are used as spatial relative concepts and are described based on the direction indicated in the drawings.

[0038] It will be understood that the terms "include", "includes" or "comprise", "comprises" when used in this specification, specify the presence of stated features, integers, steps, operations, elements, components, or combinations thereof, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, or combinations thereof.

[0039] "About" or "approximately", as used herein, includes the stated value and means within a reasonable range of error for the particular value as determined by one of ordinary skill in the art. For example, the term "about" can mean within one or more standard deviations or within ±30%, 20%, 10%, 5% of the stated value.

[0040] Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure belongs. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the relevant art and will not be interpreted in an overly idealized or formal sense unless expressly so defined.

[0041] Hereinafter, a cleaning method of a sputtering apparatus (hereinafter, also referred to as "sputtering apparatus cleaning method") in an embodiment of the inventive concept, a sputtering method including the same, and a sputtering system will be described with reference to the accompanying drawings.

[0042] Figure 1 is a cross-sectional view of an embodiment of the sputtering system according to the inventive concept, and Figure 2 is Figure 1 is an enlarged cross-sectional view of a region X of

[0043] Hereinafter, reference numeral D1 can be referred to as a first direction, reference numeral D2 intersecting the first direction D1 can be referred to as a second direction, and reference numeral D3 intersecting both the first direction D1 and the second direction D2 can be referred to as a third direction. The first direction D1 can be referred to as a vertical direction. Also, each of the second direction D2 and the third direction D3 can be referred to as a horizontal direction.

[0044] Referring to Figure 1 and Figure 2 , a sputtering system SS can be provided.

[0045] The sputtering system SS can be a system that performs a dry etching process on a substrate. In an embodiment, for example, the sputtering system SS can perform a sputtering process for etching a portion of copper in a substrate to manufacture a display apparatus. For this purpose, the sputtering system SS can include a sputtering apparatus SA, a process gas supply device 41, an oxygen gas supply device 43, a radio frequency (RF) power application device 91, and a bias power application device 93.

[0046] The sputtering apparatus SA can perform a sputtering process on a substrate. For this purpose, the sputtering apparatus SA can include a process chamber 1, a worktable 3, a discharge tube 5, an RF coil 7, and a heating device 8.

[0047] The process chamber 1 can provide a process space 1h. The process space 1h can be separated from an external space by the process chamber 1. The process space 1h can have a quadrangular (e.g., cuboid) shape or a cylindrical shape. Within the process space 1h, an etching process can be performed on a substrate. During the etching process on the substrate, the process space 1h can be maintained in a substantially vacuum state. To this end, a vacuum pump (not shown) can be connected to the process space 1h. However, the present disclosure is not limited thereto.

[0048] The workbench 3 can be disposed inside the process space 1h. The workbench 3 can support a substrate. That is, an etching process on the substrate can be performed in a state in which the substrate is disposed on the workbench 3. The workbench 3 can have various structures to fix the substrate. In an embodiment, the workbench 3 can include an electrostatic chuck (ESC) that fixes the substrate at a predetermined position using electrostatic force. However, it is not limited thereto, and the workbench 3 can also include a vacuum chuck and / or a clamping chuck, etc.

[0049] The discharge tube 5 can provide a plasma discharge space 5h. The discharge tube 5 can be connected to an upper portion of the process chamber 1. The plasma discharge space 5h can extend to the process space 1h. The plasma discharge space 5h can have a cylindrical shape, but it is not limited thereto. Plasma can be generated within the plasma discharge space 5h. This will be described in detail later.

[0050] The RF coil 7 can be wound around the discharge tube 5. More specifically, the RF coil 7 can be wound around the outer surface of the discharge tube 5 multiple times. The RF coil 7 can include an electrically conductive material. The RF coil 7 can be electrically connected to the RF power application device 91. An electric field and / or a magnetic field can be generated within the plasma discharge space 5h by the RF coil 7. Plasma can be generated in the plasma discharge space 5h by the RF coil 7. This will be described in detail later.

[0051] The heating device 8 can heat the discharge tube 5. The temperature of the plasma discharge space 5h can be increased by the heating device 8. To this end, the heating device 8 can be connected to the discharge tube 5. The heating device 8 can have various structures capable of elevating the temperature of the discharge tube 5. In an embodiment, the heating device 8 can include an infrared (IR) heating device. The IR heating device can irradiate IR to the plasma discharge space 5h. In an alternative embodiment, the heating device 8 can include a heating module. The heating module can be connected to one end of the discharge tube 5. The discharge tube 5 can be heated by the heating module. In an alternative embodiment, the heating device 8 can include a heating wire. The heating wire can be coupled to the discharge tube 5. The discharge tube 5 can be heated by the heating wire. However, it is not limited thereto, and the heating device 8 can have other structures for heating the discharge tube 5. The heating device 8 will be described in detail later.

[0052] The process gas supply device 41 can supply a process gas to the sputtering apparatus SA. In an embodiment, for example, the process gas supply device 41 can supply argon (Ar) gas to the sputtering apparatus SA. However, it is not limited thereto, and the process gas supply device 41 can also supply other types of process gases. The process gas supply device 41 can be connected to the sputtering apparatus SA. The process gas supply device 41 can include a process gas tank, a compressor, a valve, and / or a pipe, etc. At least a portion of the process gas supplied from the process gas supply device 41 can be converted into plasma in the plasma discharge space 5h. This will be described in detail later.

[0053] The oxygen gas supply device 43 can supply oxygen gas to the sputtering apparatus SA. In an embodiment, for example, the oxygen gas supply device 43 can supply oxygen gas to the sputtering apparatus SA to oxidize a predetermined material within the sputtering apparatus SA. The oxygen gas supply device 43 can be connected to the sputtering apparatus SA. The oxygen gas supply device 43 can include an oxygen gas tank, a compressor, a valve, and / or a pipe, etc. This will be described in detail later.

[0054] The RF power application device 91 can apply RF power to the RF coil 7. To this end, the RF power application device 91 can be electrically connected to the RF coil 7. The frequency of the RF power applied to the RF coil 7 by the RF power application device 91 can be about 13.56 megahertz (MHz). In alternative embodiments, the frequency of the RF power applied to the RF coil 7 by the RF power application device 91 can be about 0.5 MHz to about 10.0 MHz. By the RF power applied to the RF coil 7, an electric field and / or a magnetic field can be generated in the plasma discharge space 5h.

[0055] The bias power application device 93 can apply bias power to the stage 3. An etching process on a substrate on the stage 3 can be controlled by the bias power applied to the stage 3 from the bias power application device 93. This will be described in detail later.

[0056] Figure 3 is a flowchart illustrating an embodiment of a sputtering method according to the inventive concept.

[0057] Referring to Figure 3 , a sputtering method SM can be provided. The sputtering method SM can be a method of performing an etching process on a substrate using the sputtering system SS described with reference to Figure 1 and Figure 2 The sputtering method SM can include etching a substrate (operation Sa1), removing the substrate from the sputtering apparatus (operation Sa2), and cleaning the sputtering apparatus (operation Sa3).

[0058] The etching a substrate (operation Sa1) can include placing a substrate in the sputtering apparatus (operation Sa11), supplying a first gas into the sputtering apparatus (operation Sa12), and applying a first RF power to the sputtering apparatus (operation Sa13).

[0059] Figure 4 is a flowchart illustrating an embodiment of a cleaning method of a sputtering apparatus according to the inventive concept.

[0060] Referring to Figure 4 , a sputtering apparatus cleaning method CM can be provided. The sputtering apparatus cleaning method CM can be a cleaning method of the sputtering apparatus SA described with reference to Figure 1 and Figure 2 That is, the sputtering apparatus cleaning method CM can be a cleaning method of the sputtering apparatus SA described with reference toFigure 3 A method of performing cleaning of a sputtering apparatus (operation Sa3) is described. The sputtering apparatus cleaning method CM can include removing a portion of a first material deposited in the sputtering apparatus (operation Sb1), and oxidizing a remaining portion of the first material deposited in the sputtering apparatus (operation Sb2).

[0061] The removing of the portion of the first material deposited in the sputtering apparatus (operation Sb1) can include supplying a first cleaning gas into the sputtering apparatus (operation Sb11), and applying a third RF power to the sputtering apparatus (operation Sb12).

[0062] The oxidizing of the remaining portion of the first material deposited in the sputtering apparatus (operation Sb2) can include raising a temperature of the sputtering apparatus to a first temperature or higher (operation Sb21), supplying a second cleaning gas into the sputtering apparatus (operation Sb22), and applying a second RF power to the sputtering apparatus (operation Sb23).

[0063] Hereinafter, a sputtering method SM according to Figures 5 to 12 will be described in detail. Figure 3 and a sputtering apparatus cleaning method CM according to Figure 4 will be described in detail.

[0064] Figures 5 to 12 is a cross-sectional view sequentially illustrating a sputtering method according to Figure 3 the flowchart.

[0065] Referring to Figure 5 and Figure 3 , the placing of the substrate in the sputtering apparatus (operation Sa11) can include placing the substrate SB on a worktable 3. The worktable 3 can fix the substrate SB at a predetermined position on the worktable 3. However, it is not limited thereto, and the substrate SB can be disposed on a top surface of the worktable 3 without any separate fixing force.

[0066] Referring to Figure 6 and Figure 3 , the supplying of the first gas into the sputtering apparatus (operation Sa12) can include a process in which the process gas supply device 41 supplies the first gas G1 to the plasma discharge space 5h. The first gas G1 can be a process gas used for etching the substrate SB. In an embodiment, for example, the first gas G1 can include an argon (Ar) gas, but it is not limited thereto.

[0067] Figure 7 is an enlarged cross-sectional view of the region X' of Figure 6 Referring to Figure 7 and Figure 3The applying of the first RF power to the sputtering apparatus (operation Sa13) can include a process in which the RF power applying device 91 applies the first RF power R1 to the RF coil 7. The first RF power R1 can be about 13.56 MHz, but it is not limited thereto. By the first RF power R1 applied to the RF coil 7, an electric field and / or a magnetic field can be generated in the plasma discharge space 5h. Accordingly, at least a portion of the first gas (also referred to as a first process gas) G1 within the plasma discharge space 5h can be converted into a plasma PL1.

[0068] Referring back to Figure 3 , the etching of the substrate (operation Sa1) can further include applying a bias power to the worktable. In other words, as shown in Figure 6 , the bias power can be supplied to the worktable 3 from the bias power applying device 93. Accordingly, the plasma PL1 within the plasma discharge space 5h can be controlled as shown in Figure 7 . In an embodiment, for example, the plasma PL1 can move toward the substrate SB. Thus, the substrate SB on the worktable 3 can be sputtered. For example, the material sputtered from the substrate SB can be copper (Cu). That is, the sputtering method SM (see Figure 3 ) according to the inventive concept can mean a copper (Cu) etching process of etching copper (Cu) from the substrate SB.

[0069] Referring to Figure 8 and Figure 3 , the removing of the substrate from the sputtering apparatus (operation Sa2) can include removing the sputtered substrate SB (see Figure 6 ) from the worktable 3. The sputtered substrate SB can exit to the outside of the process chamber 1.

[0070] Referring back to Figure 3 , the cleaning of the sputtering apparatus (operation Sa3) can further include placing a dummy substrate DSB on the worktable 3 from which the sputtered substrate SB is removed. In other words, after the sputtered substrate SB exits the process chamber 1, the dummy substrate DSB can be arranged on the worktable 3 before the first cleaning gas G2 (see Figure 10 ) is supplied to the sputtering apparatus SA. As a result, the worktable 3 can be protected. However, it is not limited thereto, and the cleaning of the sputtering apparatus (operation Sa3) can be performed in a state in which the dummy substrate DSB is not arranged on the worktable 3.

[0071] Figure 9 is an enlarged sectional view of the region X" of Figure 8 . Referring to Figure 9 , the first material MT1 can be deposited in the sputtering apparatus SA. More specifically, upon the etching of the substrate (see operation Sa1 of Figure 3 ), a material sputtered from the substrate SB (see Figure 6) The sputtered first material MT1 can be redeposited on the inner surface of the discharge tube 5. For example, the first material MT1 can include copper (Cu). The process performed on the substrate can be interrupted due to the redeposited first material MT1 in the discharge tube 5. In an embodiment, for example, the generation of the electric field and / or the magnetic field in the plasma discharge space 5h can be interrupted due to the first material MT1 as a conductive material even when the RF power is applied to the RF coil 7.

[0072] Although shown and described based on the redeposition of the first material MT1 inside the discharge tube 5, the first material MT1 can be redeposited at a location other than the discharge tube 5. In an embodiment, for example, the first material MT1 can be deposited on the inner surface of the process chamber 1.

[0073] Referring to Figure 10 and Figure 4 The supplying of the first cleaning gas into the sputtering apparatus (operation Sb11) can include a process in which the process gas supplying device 41 supplies the first cleaning gas G2 into the plasma discharge space 5h. The first cleaning gas G2 can be a gas for removing the redeposited first material MT1. In an embodiment, for example, the first cleaning gas G2 can include argon (Ar) gas, but it is not limited thereto.

[0074] The applying of the third RF power to the sputtering apparatus (operation Sb12) can include a process in which the RF power applying device 91 applies the third RF power R2 to the RF coil 7. The third RF power R2 can be weaker than the first RF power R1 (refer to Figure 7 ). In an embodiment, for example, the frequency of the third RF power R2 can be about 0.5 MHz to about 10.0 MHz. However, it is not limited thereto, and the frequency of the third RF power R2 can be different. In an alternative embodiment, the frequency of the third RF power R2 can be substantially the same as or similar to the frequency of the first RF power R1. By the third RF power R2 applied to the RF coil 7, at least a portion of the first cleaning gas G2 disposed in the plasma discharge space 5h can be converted into a plasma PL2. By the plasma PL2 in the plasma discharge space 5h, a portion of the first material MT1 can be removed. This will be described in detail later.

[0075] Referring again to Figure 4 The bias power can not be applied to the worktable 3 while removing a portion of the first material deposited in the sputtering apparatus (operation Sb1). However, it is not limited thereto, and the bias power can be applied to the worktable 3 while removing a portion of the first material deposited in the sputtering apparatus (operation Sb1).

[0076] Referring to Figure 11 Due to the plasma PL2 (refer to Figure 10A portion of the first material MT1 can be sputtered and detached from the inner surface of the discharge tube 5. Accordingly, the amount of the first material MT1 redeposited on the inner surface of the discharge tube 5 can be reduced.

[0077] Reference Figure 12 and Figure 4 Raising the temperature of the sputtering apparatus to a first temperature or higher (operation Sb21) may include a process in which the heating device 8 heats the discharge tube 5. Therefore, the temperature of the discharge tube 5 can be higher when oxidizing the first material deposited in the sputtering apparatus than the temperature of the discharge tube 5 when etching the substrate using the sputtering apparatus. The temperature of the plasma discharge space 5h can be heated to the first temperature or higher by the heating device 8. For example, the first temperature can be from about 120 degrees Celsius (°C) to about 180°C, but it is not limited thereto.

[0078] Although the heating device 8 is shown and described in the process of oxidizing the remaining portion of the first material deposited in the sputtering apparatus (operation Sb2), the heating of the discharge tube 5 can be performed when removing a portion of the first material deposited in the sputtering apparatus (operation Sb1). That is, the discharge tube 5 can be heated by the heating device 8 when removing a portion of the first material deposited in the sputtering apparatus (operation Sb1) before supplying the first cleaning gas to the sputtering apparatus (operation Sb11).

[0079] Supplying a second cleaning gas to the sputtering apparatus (operation Sb22) may include a process in which the oxygen gas supply device 43 supplies the second cleaning gas G3 to the plasma discharge space for 5 hours. The second cleaning gas G3 may be a gas used to oxidize the remaining portion MT1' of the redeposited first material. In embodiments, for example, the second cleaning gas G3 may include oxygen gas, but it is not limited thereto.

[0080] Applying a second RF power to the sputtering apparatus (operation Sb23) may include a process in which the RF power application device 91 applies a second RF power R3 to the RF coil 7. The second RF power R3 may be weaker than the first RF power R1 (see reference). Figure 7). In an embodiment, for example, the frequency of the second RF power R3 can be about 0.5 MHz to about 10.0 MHz. However, it is not limited thereto, and the frequency of the second RF power R3 can be different. In an alternative embodiment, for example, the frequency of the second RF power R3 can be substantially the same or similar to that of the first RF power R1. By the second RF power R3 applied to the RF coil 7, at least a portion of the second cleaning gas G3 disposed within the plasma discharge space 5h can be converted into plasma PL3. The remaining portion of the first material MT1' can be oxidized by the plasma PL3 within the plasma discharge space 5h. The oxidized first material MT1" can be non-conductive. Thus, due to the RF power applied to the RF coil 7, an electric field and / or a magnetic field can be smoothly generated in the plasma discharge space 5h. As a result thereof, the etching process on the subsequent substrate can be smoothly performed.

[0081] Referring again to Figure 4 However, it is not limited thereto, and the bias power can be applied to the worktable 3 while oxidizing the remaining portion of the first material deposited in the sputtering apparatus (operation Sb2).

[0082] The sputtering apparatus cleaning method, the sputtering method including the same, and the sputtering system according to embodiments of the inventive concept can reduce the amount of copper (Cu) redeposited in the process chamber and / or the discharge tube using plasma. Additionally, the copper (Cu) redeposited in the process chamber and / or the discharge tube can be oxidized by the oxygen gas. Thus, the etching process on the subsequent substrate can be prevented from being interrupted by the copper (Cu) redeposited in the process chamber and / or the discharge tube. Additionally, the process chamber and / or the discharge tube can be cleaned using the first cleaning gas and / or the second cleaning gas without opening the process chamber. Thus, the entire process can be performed quickly.

[0083] The sputtering apparatus cleaning method, the sputtering method including the same, and the sputtering system according to embodiments of the inventive concept, after the amount of copper (Cu) is reduced to a predetermined level or less using the first cleaning gas, the remaining copper (Cu) can be oxidized by the second cleaning gas, thereby smoothly oxidizing all of the remaining copper (Cu).

[0084] The sputtering apparatus cleaning method, the sputtering method including the same, and the sputtering system according to embodiments of the inventive concept, the RF power applied to the RF coil while supplying the first cleaning gas and / or the second cleaning gas can be weaker than the RF power applied to the RF coil during the etching process on the substrate. In other words, since the optimized RF power is applied for each process, energy can be saved.

[0085] The sputtering apparatus cleaning method, the sputtering method including the same, and the sputtering system according to embodiments of the present inventive concept can clean the sputtering apparatus without opening the process chamber, thereby allowing a dry etching process of copper to be performed quickly and inexpensively.

[0086] The sputtering apparatus cleaning method, the sputtering method including the same, and the sputtering system according to embodiments of the present inventive concept can remove the material re-deposited in the process chamber.

[0087] The sputtering apparatus cleaning method, the sputtering method including the same, and the sputtering system according to embodiments of the present inventive concept can prevent a subsequent process from being interrupted by the material re-deposited in the process chamber.

[0088] While embodiments of the present application have been described, it is to be understood that the application is not to be limited to those embodiments but is capable of numerous rearrangements and modifications as will be suggested by those skilled in the art within the spirit and scope of the application as defined by the following claims.

[0089] Therefore, the technical scope of the present inventive concept is determined by the following claims and should not be limited by the foregoing description.

Claims

1. A method of cleaning a sputtering apparatus, the method of cleaning a sputtering apparatus comprising: removing a portion of a first material deposited in the sputtering apparatus; and after removing the portion of the first material deposited in the sputtering apparatus, oxidizing a remaining portion of the first material deposited in the sputtering apparatus, wherein the sputtering apparatus comprises: a process chamber providing a process space; a worktable within the process space; a discharge tube providing a plasma discharge space extending into the process space; and a radio frequency coil wrapped around the discharge tube, wherein oxidizing the remaining portion of the first material deposited in the sputtering apparatus comprises: supplying an oxygen gas to the plasma discharge space. Oxidizing the remaining portion of the first material deposited in the sputtering apparatus further comprises:

2. The cleaning method of a sputter apparatus as claimed in claim 1, wherein, boosting a temperature of the discharge tube to a first temperature or higher. The first temperature is 120 degrees Celsius to 180 degrees Celsius.

3. The cleaning method of a sputtering apparatus as claimed in claim 2, wherein, The first material comprises copper.

4. The cleaning method of a sputtering apparatus as claimed in claim 1, wherein, Oxidizing the remaining portion of the first material deposited in the sputtering apparatus further comprises:

5. The cleaning method of a sputtering apparatus as claimed in claim 1, wherein, applying a radio frequency power to the radio frequency coil. The radio frequency power is 0.5 megahertz to 10.0 megahertz.

6. The cleaning method of a sputter device as claimed in claim 5, wherein, Oxidizing the remaining portion of the first material deposited in the sputtering apparatus further comprises:

7. The cleaning method of a sputtering apparatus as claimed in claim 5, wherein, not applying a bias power to the worktable. Removing the portion of the first material deposited in the sputtering apparatus comprises:

8. The cleaning method of a sputtering apparatus as claimed in claim 1, wherein, supplying an argon gas to the plasma discharge space. Oxidizing the remaining portion of the first material deposited in the sputtering apparatus further comprises:

9. The cleaning method of a sputtering apparatus as claimed in claim 1, wherein, placing a dummy substrate on the worktable.

10. A sputtering method comprising: etching a substrate using a sputtering apparatus; removing the substrate from the sputtering apparatus; and cleaning the sputtering apparatus from which the substrate is removed, wherein the sputtering apparatus comprises: a process chamber providing a process space; a worktable within the process space; a discharge tube providing a plasma discharge space extending into the process space; and a radio frequency coil wrapped around the discharge tube, wherein cleaning the sputtering apparatus comprises: supplying an oxygen gas into the sputtering apparatus to oxidize a first material deposited in the sputtering apparatus. Etching the substrate using the sputtering apparatus comprises: removing copper in the substrate to etch the substrate, 11. The sputtering method of claim 10, wherein, wherein the first material comprises copper. Etching the substrate using the sputtering apparatus comprises: supplying an argon gas to the plasma discharge space.

12. The sputtering method of claim 11, wherein, Cleaning the sputtering apparatus further comprises: prior to oxidizing the first material deposited in the sputtering apparatus, supplying the argon gas to the plasma discharge space to remove a portion of the first material deposited in the sputtering apparatus.

13. The sputtering method of claim 12, wherein, Etching the substrate using the sputtering apparatus comprises: applying a first radio frequency power to the radio frequency coil, and 14. The sputtering method of claim 10, wherein, Oxidizing the first material deposited in the sputtering apparatus comprises: applying a second radio frequency power to the radio frequency coil, ​ ​ The second radio frequency power has a frequency lower than a frequency of the first radio frequency power.

15. The sputtering method of claim 10, wherein, The etching of the substrate using the sputtering apparatus includes: applying a bias power to the worktable, oxidizing the first material deposited in the sputtering apparatus includes: not applying the bias power to the worktable.

16. The sputtering method of claim 10, wherein, The temperature of the discharge tube when oxidizing the first material deposited in the sputtering apparatus is higher than the temperature of the discharge tube when etching the substrate using the sputtering apparatus.

17. The sputtering method of claim 10, wherein, The oxidizing of the first material deposited in the sputtering apparatus includes: placing a dummy substrate on the worktable from which the substrate is removed.

18. A sputtering system comprising: a sputtering apparatus; a process gas supply device that supplies a process gas to the sputtering apparatus; and an oxygen gas supply device that supplies an oxygen gas to the sputtering apparatus, wherein the sputtering apparatus includes: a process chamber that provides a process space; a worktable within the process space; a discharge tube that provides a plasma discharge space extending into the process space; a radio frequency coil that is wrapped around the discharge tube; and a heating device that heats the discharge tube.

19. The sputtering system of claim 18, wherein, The heating device includes at least one of: an infrared heating device that irradiates infrared rays to the plasma discharge space; a heating module that is connected to one end of the discharge tube; and a heating wire that is coupled to the discharge tube.

20. The sputtering system of claim 18, wherein, The process gas supply device supplies an argon gas to the plasma discharge space.

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