Passivation method of back contact cell, back contact cell and photovoltaic module

By combining ultraviolet, visible, and infrared laser partitioning with heating and an external hydrogen source, the problem of poor hydrogen release control in existing technologies is solved, improving the passivation effect and battery performance of the back contact battery.

CN121368211APending Publication Date: 2026-01-20WUHU GCL INTEGRATED NEW ENERGY TECH CO LTD
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Patent Information

Application Number
CN202511588691.6
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2025-10-31
Publication Date
2026-01-20

AI Technical Summary

Technical Problem

Existing photo-annealing furnaces cannot effectively control hydrogen release, resulting in poor passivation of back contact batteries and an inability to perform personalized treatment on different areas, which can easily lead to hydrogen-induced defect structures and affect battery performance.

Method used

Ultraviolet, visible, and infrared lasers are used to process different areas of the back contact battery separately. Combined with heating treatment and an external hydrogen source, the hydrogen content is controlled to achieve optimized passivation.

Benefits of technology

It improves the hydrogen passivation effect in the N and P regions, reduces carrier recombination rate, reduces hydrogen-induced defect structures, and enhances the overall performance and reliability of the battery.

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Abstract

The invention discloses a passivation method of a back contact cell, the back contact cell and a photovoltaic module. The passivation method of the back contact battery comprises the steps that ultraviolet laser is adopted for conducting laser treatment on a P area and an N area on the back face of the back contact battery, the power density of the ultraviolet laser acting on the P area is higher than that of the ultraviolet laser acting on the N area, and / or the power density of the ultraviolet laser acting on the N area is lower than that of the P area. The processing time of the ultraviolet laser acting on the P region is longer than the processing time of the ultraviolet laser acting on the N region; and carrying out laser treatment on the back surface of the back contact battery by adopting visible laser. Therefore, the back surface of the back contact battery is subjected to zoning treatment by adopting ultraviolet laser, the hydrogen passivation effect of the N region and the P region can be improved, impurities and defects are reduced, the carrier recombination rate is reduced, and a defect structure caused by excessive hydrogen sources is not easy to generate; compared with ultraviolet laser, the penetration depth of the visible laser is deeper, hydrogen passivation treatment can be performed on the silicon substrate, and the passivation effect of the silicon substrate is improved.
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