Light-emitting substrate and preparation method thereof

Abstract

The embodiment of the invention provides a light-emitting substrate and a preparation method thereof, relates to the technical field of display, and is used for increasing the area of a uniform light-emitting region in a sub-pixel region and / or solving the problem of color crosstalk caused by transverse charge transmission in a high-resolution product. The light-emitting substrate comprises a substrate body and a pixel defining layer. The pixel defining layer is located on one side of the substrate along the first direction. The pixel defining layer comprises a plurality of pixel openings; the pixel opening includes a first portion and a second portion arranged along a first direction. Wherein the first part is farther away from the substrate than the second part, and the area of the orthographic projection of the first part on the substrate is smaller than or equal to the area of the orthographic projection of the second part on the substrate. The light-emitting substrate is used for displaying images.

Description

TECHNICAL FIELD

[0001] The present disclosure relates to the technical field of display, and in particular, to a light-emitting substrate and a preparation method thereof. BACKGROUND

[0002] Organic Light Emitting Diode (OLED) display technology, as a new generation of self-luminous semiconductor display technology, is gradually expanding the market share of display, and Quantum Dot Light Emitting Diodes (QLED) display technology is considered as the most potential next generation of self-luminous semiconductor display technology, both of which are developing towards higher pixel density or resolution. The pixel definition layer (PDL) is an essential part of the QLED light-emitting substrate or OLED light-emitting substrate for realizing pixelization, one of the main functions of which is to block adjacent sub-pixels to prevent optical or electrical cross-talk between sub-pixels.

[0003] However, when the OLED light-emitting substrate or the QLED light-emitting substrate is used in high-resolution products, due to the close distance between the sub-pixels, the charges may be laterally transmitted on the functional layer with high conductivity, so that the originally closed sub-pixels are lit up, resulting in color cross-talk. SUMMARY

[0004] Embodiments of the present disclosure aim to provide a light-emitting substrate and a preparation method thereof for increasing the area of the uniform light-emitting region within the sub-pixel region, and / or for solving the color cross-talk problem caused by lateral transmission of charges in high-resolution products.

[0005] To achieve the above-mentioned purpose, embodiments of the present disclosure provide the following technical solutions:

[0006] In one aspect, a light-emitting substrate is provided. The light-emitting substrate includes a substrate and a pixel definition layer. The pixel definition layer is located on one side of the substrate along a first direction. The pixel definition layer includes a plurality of pixel openings; the pixel openings include a first portion and a second portion arranged along the first direction. The first portion is farther away from the substrate than the second portion, and the area of the orthogonal projection of the first portion on the substrate is less than or equal to the area of the orthogonal projection of the second portion on the substrate.

[0007] The area of the orthographic projection of the first portion on the substrate is less than or equal to the area of the orthographic projection of the second portion on the substrate. The material of the common film layer entering the pixel opening is more difficult to cover the sidewall of the pixel opening. In this way, the common film group on the side of the pixel defining layer away from the substrate cannot be connected with the common film group in the pixel opening. In other words, the common film group is at least disconnected at the sidewall of the pixel opening, so that the common film group cannot form a structure of whole-layer communication. In this way, the lateral transmission of charges on the common film group can be prevented, that is, the leakage of lateral current between sub-pixels can be prevented, and the problem of color crosstalk can be solved.

[0008] In some embodiments, the pixel opening has a first cross section perpendicular to the substrate, and the first cross section includes a trapezoidal cross section. In the trapezoidal cross section, the size of the side relatively far away from the substrate is less than or equal to the size of the side relatively close to the substrate.

[0009] In some embodiments, the end surface of the pixel opening close to the substrate includes a first reference line coplanar with the trapezoidal cross section. The trapezoidal cross section has a first boundary line with the pixel defining layer. The included angle between the first boundary line and the first reference line is a first angle; the first angle is greater than 0° and less than 90°.

[0010] In some embodiments, the size of the pixel defining layer along the first direction is greater than 0 and less than 1000 nm, and the first angle ranges from 20° to 50°; or, the size of the pixel defining layer along the first direction ranges from 1 μm to 3 μm, and the first angle ranges from 30° to 70°; or, the size of the pixel defining layer along the first direction is greater than 3 μm, and the first angle ranges from 45° to 80°.

[0011] In some embodiments, the first boundary line includes a first curve, and the included angle between the tangent of the first curve and the first reference line is a third angle. The difference between the maximum value of the third angle and the minimum value of the third angle is greater than 0 and less than or equal to 6°.

[0012] In some embodiments, the light-emitting substrate further includes a plurality of light-emitting devices arranged in the plurality of pixel openings. The light-emitting device includes a first electrode and a second electrode arranged opposite along the first direction, and the first electrode is closer to the substrate than the second electrode. The surface of the first electrode away from the substrate includes a second reference line coplanar with the trapezoidal cross section. The trapezoidal cross section has a first boundary line with the pixel defining layer; and the included angle between the first boundary line and the second reference line is greater than 0° and less than 90°.

[0013] In some embodiments, a gap is provided between the first electrode and the pixel defining layer; and the size of the gap along the second direction ranges from 1 nm to 200 nm; and the second direction is perpendicular to the first direction.

[0014] In some embodiments, the light emitting device further includes a functional film group between the first electrode and the second electrode. An edge of the functional film group close to the pixel defining layer is curved towards the substrate base; or, an edge of the functional film group close to the pixel defining layer is curved away from the substrate base.

[0015] In some embodiments, the light emitting device further includes a functional film group between the first electrode and the second electrode. A surface of the first electrode away from the substrate base includes a first line segment coplanar with the trapezoidal cross section; a surface of the second electrode close to the substrate base includes a second line segment coplanar with the trapezoidal cross section. Two boundaries of the orthographic projection of the first line segment on the substrate base correspondingly overlap with two boundaries of the orthographic projection of the second line segment on the substrate base, and overlap with a boundary of the orthographic projection of the end of the pixel opening away from the substrate base on the substrate base. The first line segment and the second line segment have a first interval therebetween. An absolute value of the difference between the first interval and a first reference interval is less than or equal to 20% of the first reference interval. The first reference interval is a first interval corresponding to the center of the first line segment.

[0016] In some embodiments, an edge of the orthographic projection of the functional film group on the substrate base overlaps with an edge of the orthographic projection of the pixel defining layer on the substrate base.

[0017] In some embodiments, the pixel defining layer includes a first sub-layer and a second sub-layer arranged along a first direction. The first sub-layer is farther away from the substrate base than the second sub-layer. The first sub-layer includes a plurality of first sub-openings; the second sub-layer includes a plurality of second sub-openings. The plurality of second sub-openings correspondingly face the plurality of first sub-openings; an edge of the first sub-opening is closer to the center of the pixel opening than an edge of the second sub-opening.

[0018] In some embodiments, the first sub-opening has a first sub-cross section perpendicular to the substrate base, the first sub-cross section including a trapezoidal cross section, an inverted trapezoidal cross section, or a rectangular cross section. The second sub-opening has a second sub-cross section perpendicular to the substrate base, the second sub-cross section including a trapezoidal cross section, an inverted trapezoidal cross section, a rectangular cross section, or a concave cross section.

[0019] In some embodiments, in the case where the second sub-cross section includes a concave cross section, a perpendicular line of a tangent at one end of the second sub-cross section and a perpendicular line of a tangent at the other end of the second sub-cross section have a second angle therebetween. The second angle ranges from 20° to 90°.

[0020] In some embodiments, in the case where the second sub-cross section includes a plurality of concave cross sections, a second angle corresponding to a concave cross section farther away from the substrate base is greater than or equal to a second angle corresponding to a concave cross section closer to the substrate base.

[0021] In some embodiments, the first sub-layer has a dimension along the first direction that is smaller than a dimension of the second sub-layer along the first direction.

[0022] In some embodiments, the first sub-layer has a dimension along the first direction that is greater than or equal to 10 nm and smaller than or equal to 200 nm; and / or, the second sub-layer has a dimension along the first direction that is greater than 0.5 pm and smaller than or equal to 10 pm.

[0023] In some embodiments, the material of the first sub-layer comprises an inorganic material; and / or, the material of the second sub-layer comprises an organic material.

[0024] In some embodiments, the light-emitting substrate further comprises a common film set and a plurality of light-emitting devices. The common film set is located on a surface of the pixel defining layer away from the substrate. The plurality of light-emitting devices are disposed in the plurality of pixel openings. The light-emitting device comprises a first electrode, a second electrode, and a functional film set. The first electrode and the second electrode are oppositely arranged along the first direction. The functional film set is located between the first electrode and the second electrode. At least part of the film layers in the functional film set is the same layer and same material as the common film set, and the film set in the functional film set that is the same layer and same material as the common film set is in a disconnected state with the common film set.

[0025] In another aspect, a preparation method of a light-emitting substrate is provided. The preparation method comprises: forming a substrate; and forming a pixel defining layer on one side of the substrate along a first direction. The pixel defining layer comprises a plurality of pixel openings; the pixel opening comprises a first portion and a second portion arranged along the first direction. The first portion is farther away from the substrate than the second portion, and the area of the orthogonal projection of the first portion on the substrate is smaller than or equal to the area of the orthogonal projection of the second portion on the substrate.

[0026] The preparation method of the light-emitting substrate can achieve the same beneficial effects as the light-emitting substrate, which will not be repeated here.

[0027] In some embodiments, the preparation method further comprises forming a patterned first electrode. The pixel defining layer comprises a first sub-layer and a second sub-layer arranged along the first direction. Forming the pixel defining layer comprises: forming a second initial layer on one side of the substrate along the first direction; forming a first initial layer on a side of the second initial layer away from the substrate; forming a mask layer on a side of the first initial layer away from the second initial layer, the mask layer exposing a target area of the surface of the first initial layer away from the second initial layer; etching the first initial layer using a first dry etching process to form the first sub-layer; and removing the mask layer and etching the second initial layer using a second dry etching process to form the second sub-layer. The first dry etching process uses a first gas atmosphere, and the second dry etching process uses a second gas atmosphere, and the second gas contains at least one element same as an element contained in the first electrode. BRIEF DESCRIPTION OF DRAWINGS

[0028] In order to more clearly illustrate the technical solutions in the present disclosure, the following will briefly introduce the drawings needed to be used in some embodiments of the present disclosure. Obviously, the drawings in the following description are only some drawings of the embodiments of the present disclosure, and other drawings can also be obtained by those skilled in the art according to these drawings. In addition, the drawings in the following description can be regarded as schematic diagrams, and are not limited to the actual size, actual process, actual time sequence, etc. of the product, method, signal, etc. involved in the embodiments of the present disclosure.

[0029] Figure 1 Structure diagram of a light-emitting substrate according to some embodiments;

[0030] Figure 2 Structure diagram of a light-emitting substrate according to some other embodiments;

[0031] Figure 3 Partial sectional view of a light-emitting substrate according to some embodiments;

[0032] Figure 4 Structure diagram of a light-emitting substrate according to some other embodiments;

[0033] Figure 5A Partial sectional view of a micro-topography of a light-emitting substrate according to some embodiments;

[0034] Figure 5B Partial sectional view of a micro-topography of a light-emitting substrate according to some other embodiments;

[0035] Figure 5C Plan view of a light-emitting substrate according to some embodiments;

[0036] Figure 5D Partial sectional view of a light-emitting substrate according to some other embodiments;

[0037] Figure 5E Partial sectional view of a light-emitting substrate according to some other embodiments;

[0038] Figure 6 Light-emitting image of a light-emitting substrate according to some embodiments;

[0039] Figure 7 Structure diagram of a light-emitting substrate according to some other embodiments;

[0040] Figure 8 Structure diagram of a light-emitting substrate according to some other embodiments;

[0041] Figure 9A Force analysis diagram of ink on a pixel defining layer according to some embodiments;

[0042] Figure 9B Force analysis diagram of ink on pixel defining layer according to some embodiments;

[0043] Figure 10A Surface topography diagram after thin film deposition according to some embodiments;

[0044] Figure 10B Surface topography diagram after thin film deposition according to some embodiments;

[0045] Figure 11 Structure diagram of light emitting substrate according to some embodiments;

[0046] Figure 12A Structure diagram of light emitting substrate according to some embodiments;

[0047] Figure 12B Structure diagram of light emitting substrate according to some embodiments;

[0048] Figure 12C Structure diagram of light emitting substrate according to some embodiments;

[0049] Figure 12D Structure diagram of light emitting substrate according to some embodiments;

[0050] Figure 13 Structure diagram of light emitting substrate according to some embodiments;

[0051] Figure 14 Structure diagram of light emitting substrate according to some embodiments;

[0052] Figure 15 State change diagram during thin film deposition according to some embodiments;

[0053] Figure 16 Structure diagram of light emitting substrate according to some embodiments;

[0054] Figure 17 Structure diagram of light emitting substrate according to some embodiments;

[0055] Figure 18 Structure diagram of light emitting substrate according to some embodiments;

[0056] Figure 19 Structure diagram of light emitting substrate according to some embodiments;

[0057] Figure 20 Structure diagram of light emitting substrate according to some embodiments;

[0058] Figure 21 Partial cross-sectional diagram of light emitting substrate according to some embodiments;

[0059] Figure 22 Structure diagram of a light emitting substrate according to further embodiments;

[0060] Figure 23 Partial cross-sectional view of a light emitting substrate according to further embodiments;

[0061] Figure 24 Flow chart of a method of manufacturing a light emitting substrate according to some embodiments;

[0062] Figure 25 Diagram of steps in a method of manufacturing a light emitting substrate according to some embodiments. DETAILED DESCRIPTION

[0063] The technical solutions in the embodiments of the present disclosure will be clearly and completely described below with reference to the drawings. It is apparent that the described embodiments are only a part of the embodiments of the present disclosure, and not all the embodiments. Based on the embodiments provided by the present disclosure, all other embodiments obtained by a person of ordinary skill in the art belong to the scope of protection of the present disclosure.

[0064] Unless otherwise required by context, the term "comprises" in the specification and claims is to be construed as an open, inclusive meaning, i.e. "comprises, but is not limited to". In the description of the specification, the terms "one embodiment", "some embodiments", "exemplary embodiment", "example", or "some examples" are intended to mean that the particular feature, structure, material, or characteristic following the term is included in at least one embodiment or example of the present disclosure. The illustrative representations of the above terms do not necessarily refer to the same embodiment or example. In addition, the particular features, structures, materials, or characteristics described can be included in any suitable way in one or more embodiments or examples.

[0065] Hereinafter, the terms "first", "second", etc. are used only for the purpose of description and should not be construed as indicating or implying relative importance or implicitly indicating the number of the technical features indicated. Therefore, the features defined with "first", "second" can explicitly or implicitly include one or more of the features. In the description of the embodiments of the present disclosure, unless otherwise stated, the meaning of "a plurality of" is two or more.

[0066] "A, B, and C at least one of" has the same meaning as "at least one of A, B, or C", and includes the following combinations of A, B, and C: only A, only B, only C, a combination of A and B, a combination of A and C, a combination of B and C, and a combination of A, B, and C.

[0067] "A and / or B" includes the following three combinations: only A, only B, and a combination of A and B.

[0068] The use of “applies to” or “configured to” in this article implies an open and inclusive language that does not preclude applicability to or configuration to devices that perform additional tasks or steps.

[0069] In addition, the use of “based on” implies openness and inclusivity, because processes, steps, calculations or other actions “based on” one or more of the stated conditions or values ​​may in practice be based on additional conditions or values ​​beyond those stated.

[0070] As used herein, “about,” “approximately,” or “approximately” includes the stated value and the average value within an acceptable range of deviation from the given value, wherein the acceptable range of deviation is determined by a person skilled in the art taking into account the measurement under discussion and the error associated with the measurement of the given quantity (i.e., the limitations of the measurement system).

[0071] As used herein, “parallel,” “perpendicular,” and “equal” include the described situation and situations that are similar to the described situation, within an acceptable range of deviation, which is determined by those skilled in the art taking into account the measurement under discussion and the error associated with the measurement of a particular quantity (i.e., the limitations of the measurement system). For example, “parallel” includes absolute parallelism and approximate parallelism, where an acceptable range of deviation for approximate parallelism may be, for example, within 5°; “perpendicular” includes absolute perpendicularity and approximate perpendicularity, where an acceptable range of deviation for approximate perpendicularity may also be, for example, within 5°; “equal” includes absolute equality and approximate equality, where an acceptable range of deviation for approximate equality may be, for example, a difference between the two equals being less than or equal to 5% of either one.

[0072] It should be understood that when a layer or element is referred to as being on another layer or substrate, it can mean that the layer or element is directly on the other layer or substrate, or that there is an intermediate layer between the layer or element and the other layer or substrate.

[0073] This document describes exemplary embodiments with reference to cross-sectional views and / or plan views, which are idealized exemplary drawings. In the drawings, the thickness of layers and the area of ​​regions are enlarged for clarity. Therefore, variations in shape relative to the drawings are contemplated due to, for example, manufacturing techniques and / or tolerances. Thus, exemplary embodiments should not be construed as being limited to the shapes of the regions shown herein, but rather include shape deviations due to, for example, manufacturing processes. For example, etched areas shown as rectangular would typically have curved features. Therefore, the regions shown in the drawings are schematic in nature, and their shapes are not intended to show the actual shapes of the areas of the device, nor are they intended to limit the scope of the exemplary embodiments.

[0074] It should be noted that, for example, 11 to 1 in the accompanying drawings of this disclosure indicate that component 11 belongs to component 1, and K1 to K indicate that side K1 belongs to trapezoidal section K. Other similar reference numerals in the accompanying drawings also follow the above explanation. For example, 1 / 2 in the accompanying drawings of this disclosure indicates that both component 1 and component 2 can refer to this component. For example, W2 / W3 in the accompanying drawings indicates that both boundary line W2 and the second boundary line W3 can be represented by this component. Other similar reference numerals in the accompanying drawings also follow the above explanation.

[0075] like Figure 1 As shown, some embodiments of this disclosure provide a light-emitting substrate 200. The light-emitting substrate 200 includes a substrate 210 and a pixel defining layer 220. The pixel defining layer 220 is located on one side of the substrate 210 along a first direction X. The pixel defining layer 220 includes a plurality of pixel openings Q.

[0076] The aforementioned light-emitting substrate 200 can be, for example, a QLED light-emitting substrate. Quantum dots, due to their narrow emission spectrum, adjustable emission wavelength by size, and high luminous efficiency, have become strong competitors in new display technologies. In QLED light-emitting substrates, the light-emitting devices can be fabricated using photolithography, achieving high pixel density and high brightness, making them suitable for near-eye displays.

[0077] The aforementioned light-emitting substrate 200 can be applied to display devices. The display device can be any display device that displays either moving (e.g., video) or stationary (e.g., still images), and whether it displays text or images. More specifically, the light-emitting substrate 200 of the described embodiment is contemplated for implementation in or associated with a variety of electronic devices, such as (but not limited to) mobile phones, wireless devices, personal data assistants (PDAs), handheld or portable computers, GPS receivers / navigators, cameras, MP4 video players, camcorders, game consoles, watches, clocks, calculators, television monitors, flat panel displays, computer monitors, automotive displays (e.g., odometer displays, etc.), navigators, cockpit controllers and / or displays, displays of camera views (e.g., displays of rearview cameras in vehicles), electronic photographs, electronic billboards or signs, projectors, architectural structures, packaging and aesthetic structures (e.g., displays of images of a piece of jewelry), etc.

[0078] It should be noted that in some examples, the surface of the substrate 210 has various channels, openings, circuitry (e.g., pixel driving circuit 2121 described below), and other microstructures. The portion of the pixel defining layer 220 close to the substrate 210 can be in contact with these microstructures on the surface of the substrate 210. However, for ease of expression, these microstructures on the substrate 210 are omitted in the drawings of the present disclosure, i.e., the surface of the substrate 210 close to the pixel defining layer 220 is represented as an approximately flat surface. However, the slight deviations in the profile of the pixel defining layer 220 caused by these microstructures, as well as the slight deviations in the parameters such as the first angle a described in detail below, are all within the scope of protection of the present disclosure.

[0079] Exemplarily, the size of the pixel defining layer 220 along the first direction X can be 0.2 μm to 3 μm, such as 0.2 μm, 0.5 μm, 0.8 μm, 1.0 μm, 1.5 μm, 2.0 μm, 2.4 μm, or 3 μm, etc.

[0080] Exemplarily, the size of the pixel defining layer 220 along the first direction X can be 0.5 μm to 1.5 μm.

[0081] In some embodiments, as shown in FIG. 2A, the light-emitting substrate 200 further includes a plurality of light-emitting devices 100 disposed in the plurality of pixel openings Q. For example, the plurality of light-emitting devices 100 can be disposed one-to-one corresponding to the plurality of openings Q. Figure 1

[0082] In some embodiments, as shown in FIG. 2A, the light-emitting substrate 200 further includes a plurality of light-emitting devices 100 disposed in the plurality of pixel openings Q. For example, the plurality of light-emitting devices 100 can be disposed one-to-one corresponding to the plurality of openings Q. Figure 1

[0083] In the case where the substrate 210 includes the substrate 211, the first direction X is, for example, a direction perpendicular to the plane in which the substrate 211 lies. The plurality of pixel openings Q can be arranged along a second direction Y, which is, for example, a direction parallel to the plane in which the substrate 211 lies.

[0084] Exemplarily, the material of the substrate 211 can be a rigid material, such as glass, to realize a rigid substrate display; or the material of the substrate 211 can also be a flexible material, such as polyimide (PI) or polyethylene glycol terephthalate (PET), to realize a flexible substrate display.

[0085] ​​In some examples, the driving circuit layer 212 includes multiple pixel driving circuits 2121 arranged in an array, each pixel driving circuit 2121 including multiple transistor TFTs. The pixel driving circuits 2121 are electrically connected to the light-emitting devices 100 and are used to drive the light-emitting devices 100 to emit light. For example, the pixel driving circuits 2121 can generate a driving current. Each light-emitting device 100 can emit light under the driving action of the driving current generated by its respective pixel driving circuit 2121. In this case, the pixel driving circuits 2121 employ TFT technology, and the light-emitting substrate 200 can be referred to as an active-driven light-emitting substrate (e.g., an active-driven QLED light-emitting substrate, an AMQLED light-emitting substrate). Among these, AMQLED light-emitting substrates have received increasing attention due to their potential advantages in wide color gamut and long lifetime, and their quantum efficiency is continuously improving, essentially reaching the level of industrialization.

[0086] In some examples, such as Figure 1 As shown, the light-emitting substrate 200 also includes an encapsulation layer 230, which can be disposed on the side of the plurality of light-emitting devices 100 away from the substrate 210. That is, the encapsulation layer 230 can be disposed on the side of the pixel defining layer 220 away from the substrate 210.

[0087] For example, the light-emitting substrate 200 can be a QLED light-emitting substrate or an OLED light-emitting substrate. In this case, the encapsulation layer 230 covers the light-emitting device 100 and encapsulates the light-emitting device 100 to prevent moisture and oxygen from the external environment from entering the light-emitting substrate 200 and damaging the materials in the light-emitting device 100, thereby shortening the lifespan of the QLED light-emitting substrate or the OLED light-emitting substrate.

[0088] In some embodiments, the plurality of light-emitting devices 100 include blue light-emitting devices, red light-emitting devices, and green light-emitting devices. In this case, the light-emitting substrate 200 can be used for full-color display. By adjusting the brightness (grayscale) of the blue light-emitting devices, red light-emitting devices, and green light-emitting devices respectively, multiple colors can be displayed through color combination and superposition.

[0089] In some embodiments, such as Figure 1 and Figure 2 As shown, the light-emitting device 100 includes a first electrode 110 and a second electrode 120 disposed opposite to each other along a first direction X. The first electrode 110 is closer to the substrate 210 than the second electrode 120.

[0090] In some examples, the first electrode 110 is the anode and the second electrode 120 is the cathode; in this case, the light-emitting device 100 can be called a positively positioned light-emitting device. In still other examples, the first electrode 110 is the cathode and the second electrode 120 is the anode; in this case, the light-emitting device 100 can be called an inverted light-emitting device.

[0091] Exemplarily, the first electrode 110 can have a size of 50 nm to 300 nm along the first direction X, such as 50 nm, 80 nm, 100 nm, 130 nm, 200 nm, 255 nm or 300 nm, etc.

[0092] In some examples, the first electrode 110 is a transparent electrode, and in this case, the first electrode 110 can have a size of 60 nm to 110 nm along the first direction X, such as 60 nm, 70 nm, 80 nm, 95 nm, 100 nm or 110 nm, etc.

[0093] In yet some examples, the first electrode 110 is a non-transparent electrode, and in this case, the first electrode 110 can have a size of 100 nm to 160 nm along the first direction X, such as 100 nm, 110 nm, 120 nm, 130 nm, 145 nm or 160 nm, etc.

[0094] In some embodiments, as shown in FIGS. 1A and 1B, the light emitting device 100 further includes a functional film group 130 between the first electrode 110 and the second electrode 120. Figure 1 and Figure 2 The functional film group 130, for example, includes a plurality of functional film layers.

[0095] Exemplarily, the functional film group 130 can have a size of 50 nm to 300 nm along the first direction X, such as 50 nm, 70 nm, 90 nm, 100 nm, 120 nm, 130 nm, 150 nm, 160 nm, 200 nm, 240 nm, 265 nm or 300 nm, etc.

[0096] Exemplarily, the functional film group 130 can have a size of 120 nm to 200 nm along the first direction X.

[0097] In some examples, the functional film group 130 includes a light emitting layer. In operation, a voltage is applied to the first electrode 110 and the second electrode 120 respectively, so that an electric field is generated between the first electrode 110 and the second electrode 120, and holes from the anode and electrons from the cathode are driven to recombine in the light emitting layer, thereby emitting light.

[0098] Exemplarily, the light-emitting layer is a quantum dot light-emitting layer, in which case, the material of the light-emitting layer can include quantum dots, which can be any combination of one or more of CdS, CdSe, ZnSe, ZnTeSe, InP, PbS, CsPbCl3, CsPbBr3, CsPhI3, CdS / ZnS, CdSe / ZnS, ZnSe, ZnSeTe, InP / ZnS, PbS / ZnS, CsPbCl3 / ZnS, CsPbBr3 / ZnS, CsPbI3 / ZnS, CdS / ZnSeS / ZnS, CdSe / ZnSeS / ZnS, ZnSe / ZnSeS / ZnS, ZnSeTe / ZnSeS / ZnS, InP / ZnS, PbS / ZnS, CsPbCl3 / ZnS, CsPbBr3 / ZnS, and CsPhI3 / ZnS. Moreover, the shape of the quantum dots includes but is not limited to a spherical shape, an ellipsoidal shape, a polyhedral shape, a rod shape, a cross shape, or a ring shape, etc.

[0099] In some embodiments, to improve the light-emitting efficiency of the light-emitting device 100, the functional film group 130 further includes a hole transport functional layer between the light-emitting layer and the anode. The hole transport functional layer includes, for example, at least one of a hole injection layer (HIL), a hole transport layer (HTL), and an electron blocking layer (EBL).

[0100] In some embodiments, to improve the light-emitting efficiency of the light-emitting device 100, the functional film group 130 further includes an electron transport functional layer between the light-emitting layer and the cathode. The electron transport functional layer includes, for example, at least one of an electron injection layer (EIL), an electron transport layer (ETL), and a hole blocking layer (EBL) stacked.

[0101] In some embodiments, the pixel defining layer 220 can form a micro-nano structure on the surface of the substrate 210, for example, a pixelated micro-nano structure, where the pixelated micro-nano structure is, for example, an array of sub-pixel regions formed by the pixel defining layer 220, where the sub-pixel region is a region enclosed by the material of the pixel defining layer 220, which can also be referred to as an opening region.

[0102] In some implementations, the light-emitting substrate is a QLED light-emitting substrate. The functional film group is prepared by a solution process, for example, by a process such as spin coating, inkjet printing, slit coating, blade coating, air knife coating, and the like. When the film-forming material is coated on the micro-nano structure formed by the pixel definition layer, the thin film is affected by various factors such as the climbing effect, the coffee ring effect, the dam effect, and the difference in wettability of the ink and the surface of the substrate substrate, resulting in an impact on the film uniformity of the thin film in the sub-pixel area.

[0103] In yet some implementations, as shown in FIG. 1B, the pixel opening D-Q in the pixel definition layer D-PDL is large at the top and small at the bottom (the end away from the substrate substrate BP is at the top), in other words, the angle β between the profile line of the pixel definition layer D-PDL and the surface of the substrate substrate BP on one side is an acute angle (for example, an acute angle greater than or equal to 30°). In this case, after the functional film group prepared by the solution process is formed in the sub-pixel area, the profile G1 of the thin film M1 away from the surface of the substrate substrate BP is similar to a "U-shaped" shape, the film uniformity of the thin film M1 in the sub-pixel area is poor, and the light-emitting proportion of the flat area is not high, and the light-emitting uniformity is poor. Figure 4

[0104] Moreover, after the multi-layer functional film layer is stacked layer by layer, the non-uniformity of the thin film M1 may also increase layer by layer, making the film thickness deviation of the whole light-emitting device larger. This increasing trend of deviation is particularly prominent on a light-emitting substrate with high pixel density. The non-uniformity of the film thickness may cause two direct light-emitting defects: light-emitting non-uniformity of a single sub-pixel area, and light-emitting non-uniformity between different sub-pixels.

[0105] For example, Figure 5A and Figure 5B are partial diagrams of the micro-morphology of the light-emitting substrate obtained by a scanning electron microscope (SEM). Figure 5C to 5E is a partial diagram of the light-emitting substrate obtained by a focused ion beam (FIB)-transmission electron microscope (TEM). Among them, Figure 5A In FIG. 1C, the two dashed boxes schematically show the phenomenon of film thickness increase of the thin film M1 in the area close to the pixel definition layer D-PDL. Figure 5B In FIG. 1D, the film thickness of the thin film M1 in the area close to the pixel definition layer D-PDL is measured, and the film thicknesses of the three measured positions are d1, d2, and d3, respectively. The results show that the film thickness difference is large. Figure 5B ​In the middle, d1 is for example 155 nm, d2 is for example 132 nm, and d3 is for example 110 nm. Figure 5C is a partial view of a top view of the light-emitting substrate along the first direction X. The pixel definition layer D-PDL is shown in the top view. Figure 5C is sub-ion bombardment at A in Figure 5D , and the cross-sectional view obtained is shown in Figure 5C , and the thickness of the film M1 in the cross-sectional layer is measured, and the results show that the film thickness of the part of the film M1 close to the pixel definition layer D-PDL ranges from 89 nm to 100 nm. Figure 5C is sub-ion bombardment at B in Figure 5E , and the cross-sectional view obtained is shown in Figure 5D , and the thickness of the film M1 in the cross-sectional layer is measured, and the results show that the film thickness of the part of the film M1 in the pixel center region ranges from 52 nm to 58 nm. Figure 5E , it can be seen that the film thickness values obtained by measuring at different positions in the same field of view are not the same. Figure 5A to 5E , it can be seen that in the sub-pixel region, the film M1 often presents a morphology that the pixel center region is relatively flat and the film thickness uniformity is good, while the film thickness increases and the film thickness non-uniformity increases in the region close to the pixel definition layer D-PDL, which increases the film formation non-uniformity in the entire sub-pixel region. In this case, the proportion of the effective light-emitting region AA1 (which can be understood as a uniform light-emitting region) in the light-emitting region BB1 (see Figure 4 ) in the sub-pixel region of the light-emitting substrate is reduced.

[0106] For example, Figure 6 is an image when the sub-pixel region emits light at different voltages when the film thickness uniformity is poor. Among them, Figure 6 (a) is an image when the red sub-pixel region emits light at a low voltage, Figure 6 (b) is an image when the red sub-pixel region emits light at a high voltage, Figure 6 (c) is an image when the green sub-pixel region emits light at a low voltage, Figure 6 (d) is an image when the green sub-pixel region emits light at a high voltage. From Figure 6 , it can be seen that when the film thickness uniformity is poor, there is a phenomenon of non-uniform light emission in a single sub-pixel region, and there is also a phenomenon of non-uniform light emission between different sub-pixels, which will cause the non-uniformity of the performance such as efficiency, service life, etc. of different sub-pixels, and further affect the use performance of the entire light-emitting substrate.

[0107] Moreover, from Figure 6 , it can be seen that in the sub-pixel region, only the part of the effective light-emitting region is close to the pixel center. It should be noted that Figure 6The figure also shows the edge-emitting region in the sub-pixel region (i.e., the ring-shaped emitting region located at the edge of the sub-pixel region shown in the figure). This may be because some functional film layers in the functional film group generate lateral currents, which transfer a certain amount of charge carriers to the thinner film layer position at the top edge of the pixel opening, causing the thinner film layer at the top edge of the pixel opening to emit light. Here, the top refers to the end away from the substrate.

[0108] It is evident that when the pixel defining layer forms a micro-nano structure on the substrate surface, and the pixel openings in the pixel defining layer are larger at the top and smaller at the bottom, the film uniformity of the functional film assembly prepared by solution processing will be affected, leading to an increase in the film non-uniformity of the functional film assembly. Moreover, the non-uniformity of film formation will cause uneven light emission within the sub-pixel region and / or uneven light emission between different sub-pixels, thereby affecting the performance of the light-emitting substrate.

[0109] In some embodiments, such as Figure 1 and Figure 2 As shown, the second electrodes 120 of multiple light-emitting devices 100 are formed in the same layer and with the same material in a single process. In this case, the film layer containing the second electrode 210 is a common film layer shared by the multiple light-emitting devices 100. In some cases, the second electrode 120 may be formed simultaneously on the side of the pixel defining layer 220 away from the substrate 210. In this case, the second electrode 120 located on the side of the pixel defining layer 220 away from the substrate 210 may be in full-layer communication with the second electrode 210 located within the pixel opening Q.

[0110] Similarly, such as Figure 2 As shown, a functional film layer in the functional film group 130 of multiple light-emitting devices 100 can be formed in a single process using the same material. For example, the hole injection layers of multiple light-emitting devices 100 can be formed in a single process using the same material. In this case, the hole injection layer is a common film layer shared by multiple light-emitting devices 100. In some cases, the common film layer may be formed simultaneously on the side of the pixel defining layer 220 away from the substrate 211. In this case, the common film layer on the side of the pixel defining layer 220 away from the substrate 210 may be in full-layer communication with the common film layer located within the pixel opening Q.

[0111] For example, in some implementations, such as Figure 3 As shown, the slope angle of the sidewall of the pixel defining layer D-PDL is small. In other words, the angle between the outline of the pixel defining layer D-PDL and the bottom surface of the pixel opening DQ is relatively large (greater than 90°). In this case, the common film layer prepared by processes such as vapor deposition, spin coating or slot coating is continuous between sub-pixels.

[0112] It should be understood that, in the case that the functional film group 130 includes multiple film layers, the number of common film layers in the functional film group 130 can be one or multiple, and hereinafter, one or more common film layers in the functional film group 130 are collectively referred to as the common film group 130X.

[0113] As described in the background, when a QLED light-emitting device or an OLED light-emitting device is used in a high-resolution product, charges can be transported laterally on a common film layer with high conductivity. For example, in a scenario in which a near-eye display requires more than 1000 PPI (Pixels Per Inch), due to the close distance between sub-pixels, charges can be transported laterally on a common film layer with high conductivity (for example: a hole injection layer and / or an electron transport layer), generating a lateral current leakage between sub-pixels, causing a sub-pixel that is originally in an off state to light up, resulting in color crosstalk. Here, the material of the hole injection layer is, for example, poly(3,4-ethylenedioxythiophene) (PEDOT), and the material of the electron transport layer is, for example, zinc oxide (ZnO).

[0114] Based on this, some embodiments of the present disclosure provide a light-emitting substrate 200 to solve at least one of the above technical problems. As shown in Figure 2 The pixel opening Q includes a first portion QA and a second portion QB arranged along a first direction X. The first portion QA is farther from the substrate 210 than the second portion QB, and the area S1 of the orthogonal projection of the first portion QA on the substrate 210 is less than or equal to the area S2 of the orthogonal projection of the second portion QB on the substrate 210.

[0115] It should be noted that the shape of the orthogonal projection of the first portion QA on the substrate 210 can be similar to or different from the shape of the second portion QB on the substrate 210, which is not limited here. Moreover, the shape and area of the orthogonal projection of the first portion QA of multiple pixel openings Q on the substrate 210 can be the same or different; the shape and area of the orthogonal projection of the second portion QB of multiple pixel openings Q on the substrate 210 can be the same or different, which is not limited here.

[0116] In some examples, the first portion QA and / or the second portion QB can be an end of the pixel opening Q; for example, as shown in Figure 2 The first portion QA is an end of the pixel opening Q that is farther from the substrate 210, and the second portion QB is an end of the pixel opening Q that is closer to the substrate 210.

[0117] In yet other examples, the first portion QA and / or the second portion QB can be a portion other than the end of the pixel opening Q; for example, as shown in Figure 19 The second portion QB is a portion other than the end of the pixel opening Q.

[0118] It can be understood that, in the first aspect, when the area S1 of the orthographic projection of the first portion QA on the substrate 210 is less than or equal to the area S2 of the orthographic projection of the second portion QB on the substrate 210, the material of the common film layer entering the pixel opening Q is more difficult to cover the sidewall of the pixel opening Q, so that the common film group 130X located on the side of the pixel defining layer 220 away from the substrate 210 cannot be connected with the common film group 130X located in the pixel opening Q, in other words, the common film group 130X is at least in a disconnected state at the sidewall of the pixel opening Q, so that the common film group 130X cannot form a structure of whole-layer communication, so that the charge can be prevented from being transmitted laterally on the common film group 130X, that is, the leakage of lateral current between sub-pixels can be prevented, and the problem of color crosstalk can be solved.

[0119] In the second aspect, when the area S1 of the orthographic projection of the first portion QA on the substrate 210 is less than or equal to the area S2 of the orthographic projection of the second portion QB on the substrate 210, the material of the common film group 130X climbs onto the pixel defining layer 220, and the second portion QB has a relatively large accommodation space, which can provide a certain buffer space for the material of the common film group 130X, so that the film thickness of the common film group 130X changes less, so that

[0120] In some embodiments, as shown in Figure 2 、 Figure 7 and Figure 8 , the pixel opening Q has a first cross section perpendicular to the substrate 210. The first cross section includes a trapezoidal cross section K. In the trapezoidal cross section K, the size L1 of the edge K1 relatively far away from the substrate 210 is less than or equal to the size L2 of the edge K2 relatively close to the substrate 210.

[0121] Exemplarily, the image of the first cross section can be obtained by FIB-TEM method, and then the size L1 of the edge K1 relatively far away from the substrate 210 in the trapezoidal cross section K is measured to be less than or equal to the size L2 of the edge K2 relatively close to the substrate 210.

[0122] Exemplarily, in the case that the first cross section includes the trapezoidal cross section K, the process of forming the pixel opening Q can be etching by using a negative photoresist.

[0123] It should be noted that the shape of the trapezoidal cross section K can include the case of being approximately trapezoidal or approximately trapezoidal, in other words, as long as the trapezoidal cross section K meets the requirements that the two edges along the first direction X are approximately parallel, and the two waist lines are approximately straight lines. Here, the acceptable deviation range of the two edges along the first direction X being approximately parallel, and / or the two waist lines being approximately straight lines is not limited. For example, the acceptable deviation range can be within 5° deviation.

[0124] It should be understood that when the first cross section includes the trapezoidal cross section K, and the size L1 of the side K1 in the trapezoidal cross section K is less than or equal to the size L2 of the side K2, the material (e.g., ink) forming the common film group 130X and / or the functional film group 130 can be disposed on the reverse slope, and under the joint action of the gravity G and the slope reaction force N4 (see Figure 9B ) of the reverse slope, the material of the common film group 130X and / or the functional film group 130 is more difficult to climb on the sidewall of the pixel opening Q, and the material of the common film group 130X and / or the functional film group 130 located in the pixel opening Q is more difficult to climb to the top end of the pixel defining layer 220 away from the substrate 210.

[0125] It can be understood that through the above arrangement, in the first aspect, the material forming the common film group 130X is more difficult to climb to the top end of the pixel defining layer 220 away from the substrate 210, which can effectively block the common film group 130X, so that the charge can be prevented from being transmitted laterally on the common film group 130X, which can solve the color crosstalk problem; secondly, it can suppress the problem of the edge light-emitting area emitting light mentioned in the foregoing part. In the second aspect, the material forming the functional film group 130 is more difficult to climb on the sidewall of the pixel opening Q, and the problem of uneven edge film thickness caused by the climbing effect is improved or suppressed, which can improve the uniformity of the functional film group 130 formed, which can improve the performance of the entire light-emitting substrate 200; secondly, it can improve the light-emitting uniformity of a single sub-pixel, so that the operation is more convenient and simple when the substrate 210 is compensated by a circuit or the picture quality uniformity of the light-emitting substrate 200 is adjusted; thirdly, it can improve the uniformity of the current in the sub-pixel, which is beneficial to the efficiency stability and life maintenance of the light-emitting substrate 200.

[0126] In some examples, when the first cross section includes the trapezoidal cross section K, and the size L1 of the side K1 in the trapezoidal cross section K is less than or equal to the size L2 of the side K2, the structure of the light-emitting substrate 200 is as shown in Figure 8 , and it can be known that, compared with the case where the pixel opening is large at the top and small at the bottom in some implementations (for example, as shown in Figure 4 ), the profile G2 of the surface of the thin film M2 away from the substrate 210 is relatively flatter, in other words, the flat area of the thin film M2 is larger; and although the edge part of the thin film M2 close to the pixel defining layer 220 can still have the case of uneven film thickness, compared with the case shown in Figure 4 , the uneven film thickness of the edge part can be improved to a greater extent. Moreover, Figure 8 , in the case shown in Figure 8 , the area of the effective light-emitting area AA2 (which can be understood as a uniform light-emitting area) is approximately equal to the area of the light-emitting area BB2 (see ).

[0127] To more clearly illustrate when the first section includes the trapezoidal section K (see [reference]), Figure 7 In the trapezoidal cross-section K, the dimension L1 of side K1 is less than or equal to the dimension L2 of side K2. When the functional film assembly 130 is prepared using a solution process, the influence of the morphology of the pixel defining layer 220 on the morphology of the formed functional film assembly 130 is discussed. Figure 4 The effect of the pixel delimiting layer D-PDL on the ink U1 located on it is shown in (see [reference]). Figure 9A ),as well as Figure 8 The effect of the pixel defining layer 220 on the ink U2 located thereon (see [reference]). Figure 9B An analysis and comparison were conducted. It should be noted that... Figure 9A and Figure 9B In the equation, G is gravity, N1 is friction (which can also be understood as the adhesion force between solid and liquid), N2 is the supporting force, N3 is the adhesion force between liquids, and N4 is the slope reaction force.

[0128] like Figure 9A As shown, the barrier effect of the pixel-defining layer D-PDL on ink U1 can only serve as a barrier. Ink U1 will climb onto the pixel-defining layer D-PDL and form a certain degree of enrichment after drying and film formation, making the film thickness at the edge thicker. Moreover, the thickness of this part of the film is also related to factors such as the force on ink U1, the wettability of ink U1 with the pixel-defining layer, and the morphology of the surface in contact with ink U1, rather than the result of the barrier effect alone.

[0129] As mentioned earlier, the morphology of the thin film formed by the ink is related to factors such as the ink stress on the pixel boundary layer slope, the wettability of the ink to the pixel boundary layer, and the morphology of the surface in contact with the ink. Here, we set... Figure 9A The material of the pixel-defining layer D-PDL shown is... Figure 9B The pixel defining layer 220 shown is made of the same material. That is, the wettability between ink U1 and the pixel defining layer D-PDL is set to be consistent with the wettability between ink U2 and the pixel defining layer 220. Therefore, the morphology of the thin film formed by the ink is related to factors such as the ink stress on the slope of the pixel defining layer and the morphology of the surface in contact with the ink. The following analysis will focus on the ink stress on the slope of the pixel defining layer. For a description of the analysis from the perspective of the morphology of the surface in contact with the ink, please refer to the following content; it will not be repeated here.

[0130] like Figure 9BAs shown, the pixel defining layer 220 has a barrier effect on the ink U2, which can only form a barrier effect, and cannot cause climbing and a worse film surface. Moreover, the force on the ink U2 on the slope of the pixel defining layer 220 is inclined downward, so it is not easy to remain on this slope. Therefore, the climbing caused by the barrier can be effectively inhibited, and the film surface can be made more flat. Figure 9B As shown, the above conditions are not met, so the ink U2 cannot remain on the reverse slope of the pixel defining layer 220, and the film surface can be made more flat.

[0131] In some embodiments, a white light interferometer is used to measure the thickness of the functional film group 130. Figure 4 The image of the sub-pixel area after depositing the film in the case shown is tested, and the results are as shown in Figure 10A The image of the sub-pixel area after depositing the film in the case shown is tested, and the results are as shown in Figure 8 The image of the sub-pixel area after depositing the film in the case shown is tested, and the results are as shown in Figure 10B As shown in Figure 10A and Figure 10B It can be seen that, by providing that the first cross section includes a trapezoidal cross section K, and the size L1 of the side K1 of the trapezoidal cross section K is less than or equal to the size L2 of the side K2 (see Figure 7 ), the film forming uniformity of the deposited film can be effectively improved.

[0132] In some embodiments, as shown in Figure 11 and Figure 12A The edge of the orthographic projection of the functional film group 130 on the substrate 210 overlaps the edge of the orthographic projection of the pixel defining layer 220 on the substrate 210.

[0133] It should be understood that, by the above arrangement, although the edge portion of the functional film group 130 close to the pixel defining layer 220 can still have a non-uniform film thickness, this part of the non-uniform film thickness area can be covered by the pixel defining layer 220. In this way, the electrode (for example, the second electrode 120) located on the side of the functional film group 130 away from the substrate 210 cannot cover this part of the non-uniform film thickness area, so that the part of the functional film group 130 located in the non-uniform film thickness area cannot be applied with voltage and / or current. In this way, the part of the non-uniform film thickness area can be prevented from emitting light, and thus, without changing the size of the electrode (for example, the first electrode 110) located on the side of the functional film group 130 close to the substrate 210, the proportion of the effective light emitting area AA2 (which can be understood as a uniform light emitting area) in the light emitting area BB2 (see Figure 8 ) can be improved, and the effective light emitting area can be increased to some extent.

[0134] It should be noted that, in some examples, although the projection of the pixel defining layer 220 will block the functional film group 130 of the sub-pixel area edge part, so that this part of the functional film group 130 cannot emit light, it seems to reduce a certain light emitting area, but because the effective light emitting area accounts for a higher proportion of the total area of the sub-pixel area, the actual light emitting area is not lost. Of course, the light emitting area can also be further improved by increasing the area or size of the electrode (such as the first electrode 110) located on the side of the functional film group 130 close to the substrate 210 to reduce the weak impact of the projection of the pixel defining layer 220.

[0135] The above is an exemplary description of the principle of the action of the pixel defining layer 220 on the ink used to form the functional film group 130 and the relative position relationship between the pixel defining layer 220 and the functional film group 130. The topographic features of the pixel defining layer 220 will be described exemplarily below.

[0136] In some embodiments, as shown in Figure 11 The end surface of the pixel opening Q close to the substrate 210 includes a first reference line C1 coplanar with the trapezoidal cross section K. The trapezoidal cross section K has a first boundary line with the pixel defining layer 220, and the included angle between the first boundary line and the first reference line C1 is a first angle α; the first angle α is greater than 0° and less than 90°.

[0137] It should be understood that the pixel defining layer 220 and the substrate 210 can include a third reference line C3 coplanar with the trapezoidal cross section K, when the included angle between the first boundary line and the first reference line C1 is the first angle α, and the first angle α is greater than 0° and less than 90°, the angle between the first boundary line and the third reference line C3 is 180°-α, and the angle between the first boundary line and the third reference line C3 is greater than 90° and less than 180°.

[0138] Exemplarily, considering the practicability and aperture ratio of the pixel and other factors, the first angle α is in the range of 20°-80°. It should be understood that when the first angle α is small, the proportion of the light emitting area in the sub-pixel area is relatively low, so that the light emitting area is relatively small; therefore, by setting the first angle α in the range of 20°-80°, the light emitting area in the sub-pixel area can be relatively large, and the efficiency of the light emitting substrate 200 can be improved.

[0139] Exemplarily, the first angle α can be 5°, 20°, 30°, 40°, 50°, 63°, 70°, 80° or 90°, etc.

[0140] It can be understood that by the above setting, in the trapezoidal cross section K, the edge K1 relatively far from the substrate 210 (see Figure 7The size of the common film group 130X is smaller than the size of the edge K2 that is relatively close to the substrate 210; in this way, firstly, it can prevent the charge from being transversely transported on the common film group 130X; secondly, it can improve the uniformity of the formed functional film group 130.

[0141] In some examples, such as Figure 11 As shown, the first boundary line includes the first straight line Z1. At this time, the first angle α is the angle between the first straight line Z1 and the first reference line C1.

[0142] In some other examples, such as Figure 12A to 12D As shown, the geometric shape of the pixel boundary layer 220 is irregular, making the first boundary line not a straight line. In this case, the first angle α can be obtained in different ways. The following is an exemplary description of how the first angle α is obtained in this case.

[0143] As one possible implementation, such as Figure 12A As shown, the first boundary line includes the first curve W1. In this case, the angle between the tangent H1 of the first curve W1 and the first reference line C1 is the third angle φ, which can be used as the first angle α.

[0144] It should be noted that, as Figure 12A As shown, the first angle α can be obtained by intersecting the extension of the tangent H1 of the first curve W1 and the first reference line C1.

[0145] It should be noted that there are no restrictions on the direction of curvature of the first curve W1. For example, as... Figure 12A and Figure 12B As shown, the first curve W1 can bend away from the pixel defining layer 220, in which case the third angle φ gradually decreases along the direction away from the substrate 210; conversely, the first curve W1 can bend towards the pixel defining layer 220, in which case the third angle φ gradually increases along the direction away from the substrate 210. Moreover, when the third angle φ gradually decreases or gradually increases along the direction away from the substrate 210, the third angle φ has a maximum value and a minimum value.

[0146] In some embodiments, such as Figure 12A As shown, the maximum value of the third angle φ is φ. max The minimum value of the third angle φ min The difference between them is greater than 0 and less than or equal to 6°.

[0147] For example, the maximum value of the third angle φ max The minimum value of the third angle φ min The difference between them can be 1°, 2°, 3°, 4.2°, 5° or 6°.

[0148] Understandably, the maximum value of φ at the third angle is... max When the third angle φ is a fixed value, the maximum value of φ is... max The minimum value of the third angle φ min When the difference between them is large, the minimum value of the third angle φ is... min The relatively small value of the third angle φ results in a relatively gentle reverse slope formed by the pixel opening Q, potentially reducing the proportion of the luminescent area within the sub-pixel region. Therefore, the maximum value of the third angle φ is... max The minimum value of the third angle φ min Setting the difference between the values ​​to be greater than 0 and less than or equal to 6° can make the light-emitting area in the sub-pixel region relatively large, which can improve the efficiency of the light-emitting substrate 200.

[0149] As another possible implementation, such as Figure 12B The first boundary line includes the first curve W1; or, as Figure 12C As shown, the first boundary line includes a broken line; or, as... Figure 12D As shown, the first boundary line includes a sawtooth line. In this case, the endpoint of the first boundary line furthest from the substrate 210 can be taken as the first endpoint ZA, and the endpoint of the first boundary line closest to the substrate 210 can be taken as the second endpoint ZB. Connecting the first endpoint ZA and the second endpoint ZB yields the second straight line Z4. The angle between the second straight line Z4 and the first reference line C1 can be taken as the first angle α.

[0150] Here, the first endpoint ZA can also be understood as the edge point of the pixel opening Q away from the substrate 210 (i.e., the outermost point at the top), and the second endpoint ZB can also be understood as the edge point of the pixel opening Q close to the substrate 210 (i.e., the outermost point at the bottom).

[0151] It should be noted that the first angle α mentioned above can be obtained by intersecting the extension of the second straight line Z4 with the first reference line C1.

[0152] It should be understood that, as mentioned above, when the first cross-section includes a trapezoidal cross-section K, the orthographic projection of the surface of the pixel defining layer 220 away from the substrate 210 onto the substrate 210 (hereinafter referred to as the first orthographic projection) does not completely overlap with the orthographic projection of the surface of the pixel defining layer 220 close to the substrate 210 onto the substrate 210 (hereinafter referred to as the second orthographic projection). In this case, the portion of the first orthographic projection that does not overlap with the second orthographic projection has a first width n, and the dimension of the pixel defining layer 220 along the first direction X is h, then tanα = h / n.

[0153] In some embodiments, such as Figure 11 and Figure 12A to 12DAs shown, the size of the pixel defining layer 220 along the first direction X is greater than 0 and less than 1000 nm, and the first angle a ranges from 20° to 50°. At this time, tan a ranges from 0.364 to 1.19.

[0154] Exemplarily, when the size of the pixel defining layer 220 along the first direction X is greater than 0 and less than 1000 nm, the material of the pixel defining layer 220 can be an inorganic material, for example, silicon nitride (such as SiN) or silicon oxide (such as SiOx), etc.

[0155] Exemplarily, the size of the pixel defining layer 220 along the first direction X can be 10 nm, 100 nm, 300 nm, 500 nm, 700 nm, 850 nm, or 1000 nm.

[0156] Exemplarily, when the size of the pixel defining layer 220 along the first direction X is greater than 0 and less than 1000 nm, the first angle a ranges from 30° to 45°. At this time, tan a ranges from 0.577 to 1.

[0157] Exemplarily, when the size of the pixel defining layer 220 along the first direction X is greater than 0 and less than 1000 nm, the first angle a can be 20°, 30°, 35°, 45°, or 50°, etc.

[0158] It can be understood that when the size of the pixel defining layer 220 along the first direction X is greater than 0 and less than 1000 nm, the size of the pixel defining layer 220 along the first direction X is relatively small, and under the condition that the first angle a is certain, the pixel defining layer 220 has relatively less shielding to the functional film group 130. Therefore, by setting the range of the first angle a to be 20° to 50°, the proportion of the part shielded by the pixel defining layer 220 in the functional film group 130 can be within a reasonable range, which can improve the light-emitting uniformity of the light-emitting device 100 and improve the light-emitting efficiency of the light-emitting device 100.

[0159] In some embodiments, as shown in Figure 11 and Figure 12A to 12D As shown, the size of the pixel defining layer 220 along the first direction X ranges from 1 μm to 3 μm, and the first angle a ranges from 30° to 70°. At this time, tan a ranges from 0.57 to 2.75.

[0160] Exemplarily, when the size of the pixel defining layer 220 along the first direction X ranges from 1 μm to 3 μm, the material of the pixel defining layer can be an organic material or an inorganic material. The organic material is, for example, a cured photoresist or a resin material, etc. The inorganic material is, for example, an insulating material such as silicon nitride or silicon oxide, etc.

[0161] For example, the size of the pixel defining layer 220 along the first direction X can be 1μm, 1.2μm, 1.8μm, 2.1μm, 2.7μm or 3μm.

[0162] For example, when the size of the pixel defining layer 220 along the first direction X ranges from 1 μm to 3 μm, the first angle α ranges from 45° to 70°. In this case, tanα ranges from 1 to 2.75.

[0163] For example, when the size of the pixel defining layer 220 along the first direction X ranges from 1 μm to 3 μm, the first angle α ranges from 30° to 45°. In this case, tanα ranges from 0.57 to 1.

[0164] For example, when the size range of the pixel defining layer 220 along the first direction X is 1μm to 3μm, the first angle α can be 30°, 40°, 55°, 65° or 70°, etc.

[0165] Understandably, when the size of the pixel defining layer 220 along the first direction X is in the range of 1μm to 3μm, the size of the pixel defining layer 220 along the first direction X is relatively large. When the first angle α is fixed, the pixel defining layer 220 will block the functional film group 130 relatively more. Therefore, by setting the first angle α to be in the range of 30° to 70°, the proportion of the part blocked by the pixel defining layer 220 in the functional film group 130 can be within a reasonable range, which can improve the light emission uniformity of the light-emitting device 100 and improve the light emission efficiency of the light-emitting device 100.

[0166] In some embodiments, such as Figure 11 and Figure 12A to 12D As shown, the pixel defining layer 220 has a size greater than 3 μm along the first direction X, and the first angle α ranges from 45° to 80°. In this case, tanα ranges from 1 to 5.6.

[0167] For example, when the size of the pixel defining layer 220 along the first direction X is greater than 3 μm, the material of the pixel defining layer can be an organic material or an inorganic material. Organic materials are, for example, curable photoresist or resin materials; inorganic materials are, for example, insulating materials such as silicon nitride or silicon oxide.

[0168] For example, the size of the pixel defining layer 220 along the first direction X can be 3μm, 3.5μm, 4.1μm, 5.0μm, 7.0μm or 10μm.

[0169] For example, when the size of the pixel defining layer 220 along the first direction X is greater than 3 μm, the first angle α can be 45°, 60°, 65°, 70° or 80°, etc.

[0170] Understandably, when the size of the pixel defining layer 220 along the first direction X is greater than 3μm, the size of the pixel defining layer 220 along the first direction X is relatively large. When the first angle α is fixed, the pixel defining layer 220 will block the functional film group 130 relatively more. Therefore, by setting the first angle α to be in the range of 45° to 80°, the proportion of the part blocked by the pixel defining layer 220 in the functional film group 130 can be within a reasonable range, which can improve the light emission uniformity of the light-emitting device 100 and improve the light emission efficiency of the light-emitting device 100.

[0171] In some embodiments, the surface of the first electrode 110 away from the substrate 210 includes a second reference line C2 coplanar with the trapezoidal cross-section K. The trapezoidal cross-section K has a first boundary line with the pixel defining layer 220; the included angle γ between the first boundary line and the second reference line C2 is greater than 0° and less than 90°.

[0172] For example, the included angle γ between the first boundary line and the second reference line C2 can be 10°, 20°, 32°, 40°, 55°, 60°, 70° or 90°, etc.

[0173] In some examples, the first reference line C1 is parallel to the second reference line C2. In this case, the angle γ between the first boundary line and the second reference line C2 is equal to the first angle α.

[0174] For an exemplary description of the first boundary line, please refer to the foregoing exemplary description of the first curve W1, which will not be repeated here. For an exemplary description of how the included angle γ between the second reference line C2 is obtained, please refer to the foregoing exemplary description of the first angle α, which will not be repeated here.

[0175] It should be noted that, as Figure 11 As shown, when the first boundary line is the first straight line Z1, the angle γ between the first straight line Z1 and the second reference line C2 can be obtained by intersecting the extensions of the first straight line Z1 and the second reference line C2. Figure 12A As shown, when the first boundary line is the first curve W1, the angle γ between the tangent H1 of the first curve W1 and the extension of the second reference line C2 can be obtained by intersecting the extension of the tangent H1 of the first curve W1 and the second reference line C2.

[0176] In some embodiments, such as Figure 12A As shown, when the boundary line between the trapezoidal section K and the pixel defining layer 220 includes the first curve W1, the maximum value γ of the angle γ between the tangent H1 of the first curve W1 and the second reference line C2 is... max The minimum value of the angle γ between the tangent H1 to the first curve W1 and the second reference line C2. minThe difference between them is greater than 0 and less than or equal to 6°, for example, 1°, 2°, 3.6°, 4°, 5° or 6°.

[0177] Similarly, when the angle γ between the first boundary line and the second reference line C2 is small, the edge K1 of the trapezoidal section K that is relatively far from the substrate 210 (see [reference]) can be made smaller. Figure 7 The size of the common film group 130X is smaller than the size of the edge K2 that is relatively close to the substrate 210; in this way, firstly, it can prevent the charge from being transversely transported on the common film group 130X; secondly, it can improve the uniformity of the formed functional film group 130.

[0178] In some embodiments, such as Figure 13 As shown, the first electrode 110 is formed before the pixel defining layer 220. In this case, the edge portion of the pixel defining layer 220 may cover the edge portion of the first electrode 110, or the edge portion of the pixel defining layer 220 may contact the edge portion of the first electrode 110. There is no gap between the first electrode 110 and the pixel defining layer 220 in this situation.

[0179] like Figure 13 As shown, when the edge portion of the pixel defining layer 220 can cover the edge portion of the first electrode 110, during the formation of the pixel defining layer 220, the material of the pixel defining layer 220 will replicate the pattern shape of the first electrode 110. At this time, a groove J generated by the aforementioned replication effect will be formed on the surface of the pixel defining layer 220 on the side away from the substrate 210. In some examples, when the second electrode 120 is formed, the material of the second electrode 120 will fill the groove J.

[0180] In some embodiments, such as Figure 12A and Figure 14 As shown, a gap V is provided between the first electrode 110 and the pixel defining layer 220; the size L3 of the gap V along the second direction Y ranges from 1nm to 200nm; the second direction Y is perpendicular to the first direction X.

[0181] It should be understood that the shape of the first electrode 110 and / or the pixel defining layer 220 may be irregular, so that the size L3 corresponding to the different locations of the gap V in the first direction X may vary.

[0182] Therefore, for the dimension of the gap V along the second direction Y, some embodiments of this disclosure provide a possible measurement method, such as... Figure 14As shown, during measurement, a cross-section R perpendicular to the substrate 210 of the first electrode 110 can be constructed. The shape of the cross-section R can be rectangular, trapezoidal, or inverted trapezoidal. Next, a midpoint R1 can be taken on the side of this cross-section R. Then, using this midpoint R1 as its endpoint, a line segment RL parallel to the second direction Y is drawn, with the other endpoint of this line segment RL being the boundary point R2 of the pixel defining layer 220. The distance between the midpoint R1 and the boundary point R2 is then the dimension L3 of the gap V along the second direction Y. It should be understood that the midpoint R1 in this method can also be replaced with other feature points, such as a point representing 1 / 3 or 2 / 3 of the side length.

[0183] For example, the size L3 of the gap V along the second direction Y ranges from 5 nm to 30 nm.

[0184] For example, the size L3 of the gap V along the second direction Y ranges from 20 nm to 50 nm.

[0185] For example, the size L3 of the gap V along the second direction Y ranges from 30 nm to 80 nm.

[0186] For example, the size L3 of the gap V along the second direction Y can be 1nm, 5nm, 10nm, 20nm, 30nm, 50nm, 80nm, 100nm, 155nm or 200nm, etc.

[0187] It should be understood that when a gap V is left between the first electrode 110 and the pixel defining layer 220, and at least a portion of the film layer of the functional film assembly 130 is prepared using a solution process, the morphology of the first electrode 110, the morphology of the gap V, and the edge morphology of the pixel defining layer 220 together form the morphology of the ink contact surface. The influence of the morphology of the ink contact surface on the morphology of the thin film formed by the ink will be analyzed below.

[0188] Typically, when depositing films on the surface of micro / nano structures, the deposition results can be categorized into two types: morphological and leveling. However, for the functional films in the functional film assembly 130 of OLED or QLED light-emitting devices, complete leveling is generally not achievable; therefore, the results are closer to varying degrees of morphological formation. This description of varying degrees of morphological formation is based on the fact that the thickness of each functional film and the viscosity of the solution forming each film may differ. Therefore, when forming the functional films in the functional film assembly 130 of OLED or QLED light-emitting devices, each film will exhibit a shape that is the same as, similar to, or related to the substrate surface (e.g., the surface in contact with ink). For example, if the surface in contact with ink has a concave morphology, the film deposited on it will also exhibit a morphology similar to or related to that concave morphology.

[0189] Figure 15 This diagram illustrates a possible morphological variation when depositing the material of the thin film M2 layer by layer, assuming the first angle is acute and a gap exists between the first electrode 110 and the pixel defining layer 220. Figure 15 It is known that the material of the deposited thin film M2 fills the gaps V. Here, the material of thin film M2 may include, for example, molecules and / or nanoparticles forming the functional film layer. When thin film M2 is a wet film, the material of thin film M2 may also include a solvent compatible with the dissolved material. For example... Figure 15 As shown, when the amount of material deposited in the thin film M2 is small (i.e., the thickness of the deposited thin film M2 is thinner, for example, ...), Figure 15 As shown in (a) of the image, the deposited thin film M2 tends to be complex, resulting in a certain degree of depression on its surface. As the amount of material deposited in the gap V gradually increases (e.g., when depositing multiple layers of thin film M2, or when the thickness of the deposited thin film M2 is relatively thick), the gap V will gradually be filled, and the filling effect will become increasingly obvious (see image...). Figure 15 In the case shown in (b), in other words, while forming a complex shape, it also has a filling effect on the gap V, and eventually the gap V will be completely filled, forming a shape like... Figure 15 (c) or Figure 15 The morphology shown in (d) is as follows. Among them, Figure 15 (c) and Figure 15 The morphology shown in (d) indicates that when the number of deposited thin film M2 is sufficient and / or the thickness of the deposited thin film M2 is sufficiently thick, and the gap V is completely filled, the edge of the thin film M2 will exhibit different morphologies due to the varying wettability of the pixel defining layer 220, resulting in a concave outline of the thin film M2 (e.g., Figure 15 (c) or convex surface (e.g.) Figure 15 (d) in the middle.

[0190] Therefore, based on the analysis of the angle of force on the ink on the slope of the pixel defining layer in the foregoing section, and the analysis of the morphology of the surface in contact with the ink in this section, the following conclusion can be drawn with relative certainty: when the first angle is acute, in OLED light-emitting devices or QLED light-emitting devices, when at least a portion of the functional film layer of the functional film group 130 is prepared on the surface of the micro-nano structure using a solution process, the morphology of the formed film can be greatly improved, and the film uniformity of the functional film group 130 can be greatly improved.

[0191] Based on the above principles, in some examples, such as Figure 16 and Figure 15In (c), the edge of the functional film assembly 130 near the pixel defining layer 220 bends towards the substrate 210; in some examples, such as Figure 14 and Figure 15 In (d), the edge of the functional film group 130 near the pixel defining layer 220 bends away from the substrate 210.

[0192] Understandably, when a gap V is provided between the first electrode 110 and the pixel defining layer 220, and the size L3 of the gap V along the second direction Y ranges from 1 nm to 200 nm, the uniformity of the film formation of the functional film group 130 can be greatly improved. Thus, as mentioned above, firstly, the uniformity of the efficiency, lifespan, and other performance of different sub-pixels can be improved; secondly, the operation is more convenient and simple when performing circuit compensation on the substrate 210 or adjusting the image quality uniformity of the light-emitting substrate 200; and thirdly, it is beneficial to the efficiency stability and lifespan maintenance of the light-emitting substrate 200.

[0193] In some embodiments, such as Figure 17 As shown, the surface of the first electrode 110 away from the substrate 210 includes a first line segment E1 coplanar with the trapezoidal cross-section K; the surface of the second electrode 120 near the substrate 210 includes a second line segment E2 coplanar with the trapezoidal cross-section K. The two boundaries of the orthographic projection of the first line segment E1 onto the substrate 210 correspond to and overlap with the two boundaries of the orthographic projection of the second line segment E2 onto the substrate 210, and also overlap with the boundary of the orthographic projection of the end QC of the pixel opening Q away from the substrate 210 onto the substrate 210. A first spacing D1 exists between the first line segment E1 and the second line segment E2. The ratio of the absolute value of the difference between the first spacing D1 and the first reference spacing D1X to the first reference spacing D1X is less than or equal to 20%. The first reference spacing D1X is the first spacing D1 corresponding to the center of the first line segment E1.

[0194] Here, as one possible way to obtain it, the first spacing D1 can be the distance between a point on the first line segment E1 arranged along the first direction X and a point on the second line segment E2.

[0195] For example, the first gap D1 can be measured using FIB-TEM, white light interferometer, scratch analyzer, profilometer, atomic force microscope (AFM), scanning electron microscope (SEM), etc.

[0196] It should be understood that, in cases where the edge of the functional film assembly 130 near the pixel defining layer 220 may bend towards the substrate 210 or away from the substrate 210, the first line segment E1 may be a curve bending towards the substrate 210 or away from the substrate 210. Therefore, the first spacing D1 may be greater than or less than the first reference spacing D1X at the edge.

[0197] For example, the ratio of the absolute value of the difference between the first spacing D1 and the first reference spacing D1X to the first reference spacing D1X is less than or equal to 10%.

[0198] For example, the absolute value of the difference between the first spacing D1 and the first reference spacing D1X, and the ratio of the first reference spacing D1X, is less than or equal to 5%.

[0199] For example, the absolute value of the difference between the first spacing D1 and the first reference spacing D1X, and the ratio between the absolute value and the first reference spacing D1X, can be 0, 2%, 4%, 5%, 8.5%, 10%, 13%, 16%, or 20%, etc.

[0200] It should be understood that when the first cross-section is a trapezoidal cross-section K, if the two boundaries of the orthographic projection of the first line segment E1 onto the substrate 210 overlap with the boundaries of the orthographic projection of the end QC of the pixel opening Q away from the substrate 210 onto the substrate 210, the area corresponding to the first line segment E1 is the light-emitting area BB2 in the sub-pixel region. Similarly, if the two boundaries of the orthographic projection of the second line segment E2 onto the substrate 210 overlap with the boundaries of the orthographic projection of the end QC of the pixel opening Q away from the substrate 210 onto the substrate 210, the area corresponding to the second line segment E2 is the light-emitting area BB2 in the sub-pixel region. In this case, the first distance D1 between the first line segment E1 and the second line segment E2 can be understood as the film thickness of the functional film group 130 within the light-emitting area BB2. Moreover, as Figure 7 and Figure 8 As shown, when the first cross section includes a trapezoidal cross section K, and the dimension L1 of side K1 in the trapezoidal cross section K is less than or equal to the dimension L2 of side K2, the luminous region BB2 is approximately equal to the uniformly luminous region AA2.

[0201] Understandably, through the above settings, the film thickness of the functional film group 130 within the light-emitting area BB2 can be made relatively uniform. Thus, as mentioned above, firstly, the uniformity of the performance such as efficiency and lifespan of different sub-pixels can be improved; secondly, the operation is more convenient and simple when performing circuit compensation on the substrate 210 or adjusting the image quality uniformity of the light-emitting substrate 200; and thirdly, it is beneficial to the efficiency stability and lifespan maintenance of the light-emitting substrate 200.

[0202] The above is an exemplary description of a pixel opening Q whose first cross-section includes a trapezoidal cross-section K. In some examples, the pixel defining layer 220 includes multiple sub-layers, such that the first portion QA (see [reference]) Figure 2 The area S1 of the orthographic projection of the second part QB on the substrate 210 is less than or equal to the area S2 of the orthographic projection of the second part QB on the substrate 210. Some embodiments of this case will be described exemplarily below.

[0203] In some embodiments, such as Figure 18 and Figure 19 As shown, the pixel defining layer 220 includes a first sub-layer 221 and a second sub-layer 222 arranged along a first direction X. The first sub-layer 221 is further away from the substrate 210 than the second sub-layer 222. The first sub-layer 221 includes a plurality of first sub-openings Q1; the second sub-layer 222 includes a plurality of second sub-openings Q2. The plurality of second sub-openings Q2 correspond to and are directly opposite the plurality of first sub-openings Q1; the edge Q1S of the first sub-opening Q1 is closer to the center of the pixel opening Q than the edge Q2S of the second sub-opening Q2.

[0204] It should be understood that when multiple second sub-openings Q2 are directly opposite to multiple first sub-openings Q1, the multiple second sub-openings Q2 are connected to the multiple first sub-openings Q1; moreover, each first sub-opening Q1 and its directly opposite second sub-opening Q2 constitute a pixel opening Q.

[0205] Here, the center of pixel opening Q is, for example, the center line F of pixel opening Q. In some examples, the center line of the first sub-opening Q1 coincides with the center line of the second sub-opening Q2. In this case, the center line F of pixel opening Q is both the center line of the first sub-opening Q1 and the center line of the second sub-opening Q2. In still other examples, the center lines of the first sub-opening Q1 and the second sub-opening Q2 do not coincide. In this case, the center line F of pixel opening Q can be chosen as either the center line of the first sub-opening Q1 or the center line of the second sub-opening Q2; there is no limitation here.

[0206] Here, the edge Q1S of the first sub-opening Q1 is closer to the center of the pixel opening Q than the edge Q2S of the second sub-opening Q2. This can be understood as the distance L4 between the edge Q1S of the first sub-opening Q1 and the center line F of the pixel opening Q being smaller than the distance L5 between the edge Q2S of the second sub-opening Q2 and the center line F of the pixel opening Q.

[0207] Understandably, when the edge Q1S of the first sub-opening Q1 is closer to the center of the pixel opening Q than the edge Q2S of the second sub-opening Q2, the material entering the common film layer of the pixel opening Q is less likely to cover the sidewall of the pixel opening Q. As a result, the common film group 130X is disconnected at least at the sidewall of the pixel opening Q, preventing the common film group 130X from forming a fully connected structure. This prevents the lateral transmission of charge on the common film group 130X, that is, it prevents the leakage of lateral current between sub-pixels and solves the problem of color crosstalk.

[0208] Based on this, in some embodiments, such as Figure 7 and Figure 20 As shown, the light-emitting substrate 200 also includes a common film group 130X and a plurality of light-emitting devices 100. The common film group 130X is located on the surface of the pixel defining layer 220 away from the substrate 210. The functional film group 130 is located between the first electrode 110 and the second electrode 120. At least a portion of the film layers in the functional film group 130 are of the same layer and material as the common film group 130X, and the film groups of the functional film group 130 that are of the same layer and material as the common film group 130X are disconnected from the common film group 130X.

[0209] For a description of the functional membrane module 130 and the common membrane module 130X, please refer to the exemplary description of the functional membrane module 130 and the common membrane module 130X in the foregoing section, which will not be repeated here.

[0210] Understandably, through the above settings, the common membrane group 130X is disconnected, preventing it from forming a fully connected structure. This prevents charge from being transmitted laterally on the common membrane group 130X, which means that leakage of lateral current between sub-pixels can be prevented, thus solving the problem of color crosstalk.

[0211] In some embodiments, a hole injection layer of PEDOT material is spin-coated onto a pixel defining layer 220, which includes a first sub-layer 221 (made of SiO) and a second sub-layer 222 (made of cured photoresist) and has a pixel density of 500 PPI. The resulting cross-sectional morphology is as follows. Figure 21 As shown, by Figure 21It is known that the hole injection layer material PEDOT cannot be continuous on the pixel defining layer 220, proving that some embodiments of this disclosure can effectively block common membrane modules, thereby solving crosstalk caused by lateral current leakage.

[0212] It should be noted that the shape of the first sub-opening Q1 and the shape of the second sub-opening Q2 can be the same or different. Moreover, there are no restrictions on the shape of the first sub-opening Q1 and / or the shape of the second sub-opening Q2.

[0213] In some embodiments, the first sub-opening Q1 has a first sub-section K1 perpendicular to the substrate 210, and the first sub-section K1 includes a trapezoidal section, an inverted trapezoidal section, or a rectangular section. The second sub-opening Q2 has a second sub-section K2 perpendicular to the substrate 210, and the second sub-section K2 includes a trapezoidal section, an inverted trapezoidal section, a rectangular section, or a concave section.

[0214] For example, such as Figure 18 As shown, the first sub-section K1 includes a rectangular section. The second sub-section K2 also includes a rectangular section.

[0215] For example, such as Figure 19 As shown, the first sub-section K1 includes a rectangular section. The second sub-section K2 includes a concave section.

[0216] Here, the second sub-section K2 includes a concave section, which can be understood as the second sub-section K2 including a boundary line W2 located between it and the pixel defining layer 220, and the boundary line W2 including at least one concave portion. For example, as Figure 19 As shown, the boundary line W2 includes a concave portion.

[0217] In some embodiments, such as Figure 19 As shown, when the second sub-section K2 includes a concave section, a second boundary line W3 exists between the concave section and the pixel defining layer 220. A second angle θ exists between the perpendicular line Z2 of the tangent at one end of the second boundary line W3 and the perpendicular line Z3 of the tangent at the other end. The range of the second angle θ is 20° to 90°.

[0218] It should be understood that when the second boundary line W3 is an arc, the second angle θ is the central angle corresponding to that arc.

[0219] For example, the range of the second angle θ is 20° to 60°.

[0220] For example, the second angle θ can be 20°, 30°, 40°, 45°, 50°, 60°, 80° or 90°, etc.

[0221] Understandably, when the second angle θ is large, the curvature of the concave cross-section is relatively large, which makes the process of forming the second sub-opening Q2 relatively difficult. Therefore, by setting the range of the second angle θ to 20° to 90°, the curvature of the concave cross-section can be made relatively small, thereby reducing the process difficulty of forming the second sub-opening Q2 and improving the process feasibility of forming the second sub-opening Q2.

[0222] In some embodiments, the second sub-opening Q2 is formed by a dry etching process. Furthermore, during the formation of the second sub-opening Q2, the etching gas acts on the portion of the second sub-layer 222 furthest from the substrate 210 for a relatively long time, and on the portion of the second sub-layer 222 closest to the substrate 210 for a relatively short time. This results in the second sub-section K2 exhibiting multiple concave cross-sections, and the morphologies of these multiple concave cross-sections have certain differences. The following is an exemplary description of the differences in the morphologies of these multiple concave cross-sections.

[0223] In some embodiments, such as Figure 22 and Figure 23 As shown, when the second sub-section K2 includes multiple concave sections, the second angle θ corresponding to the concave section that is relatively far away from the substrate 210 is greater than or equal to the second angle θ corresponding to the concave section that is relatively close to the substrate 210.

[0224] For example, such as Figure 22 As shown, the second sub-section K2 includes two concave sections. The second angle θ1 corresponding to the concave section that is farther away from the substrate 210 is greater than the second angle θ2 corresponding to the concave section that is closer to the substrate 210.

[0225] It should be understood that when the second sub-section K2 includes multiple concave sections, the second sub-section K2 also includes a protruding portion located between two adjacent concave sections.

[0226] Understandably, by setting up as described above, it is possible to make the common film group 130X more easily form a disconnected shape in the part of the sidewall of the pixel opening Q that is far from the substrate 210, while solving the color crosstalk problem. In this way, the problem of edge light emission area mentioned above can be suppressed.

[0227] In some embodiments, such as Figure 18 and Figure 19 As shown, the dimension L6 of the first sublayer 221 along the first direction X is smaller than the dimension L7 of the second sublayer 222 along the first direction X.

[0228] Understandably, when the dimension L6 of the first sub-layer 221 along the first direction X is smaller than the dimension L7 of the second sub-layer 222 along the first direction X, the second sub-layer 222 is relatively thick and has a relatively large proportion in the pixel defining layer 220. Thus, when forming the second sub-opening Q2, the operable thickness space is relatively large, making it easier for the second sub-opening Q2 to be formed in a direction away from the center of the pixel opening Q, and making it easier for the edge of the second sub-opening Q2 to be away from the center of the pixel opening Q. Moreover, the concave shape of the second sub-opening Q2 can be adjusted and controlled, thus improving the process feasibility and process controllability when forming the second sub-opening Q2.

[0229] In some embodiments, such as Figure 18 and Figure 19 As shown, the dimension L6 of the first sublayer 221 along the first direction X is greater than or equal to 10 nm and less than or equal to 200 nm.

[0230] For example, the size L6 of the first sublayer 221 along the first direction X can be 10nm, 30nm, 60nm, 90nm, 130nm, 165nm or 200nm, etc.

[0231] Understandably, with the above settings, the size L6 of the first sub-layer 221 along the first direction X is relatively small, so that the proportion of the first sub-layer 221 in the pixel defining layer 220 is relatively small, and the proportion of the second sub-layer 222 in the pixel defining layer 220 can be relatively large. Thus, as mentioned above, the process feasibility and process controllability of forming the second sub-opening Q2 can be improved.

[0232] In some embodiments, such as Figure 18 and Figure 19 As shown, the dimension L7 of the second sublayer 222 along the first direction X is greater than 0.5 μm and less than or equal to 10 μm.

[0233] For example, the size L7 of the second sublayer 222 along the first direction X can be 0.5μm, 3.5μm, 5.5μm, 7.0μm, 9.0μm or 10μm, etc.

[0234] Understandably, with the above settings, the size L7 of the second sub-layer 222 along the first direction X is relatively large, which can make the second sub-layer 222 account for a relatively large proportion in the pixel defining layer 220. Thus, as mentioned above, the process feasibility and process controllability of forming the second sub-opening Q2 can be improved.

[0235] In some examples, the etching conditions for inorganic materials are relatively more demanding than those for organic materials. When etching inorganic films (e.g., inorganic films containing SiO or SiN) using a dry etching process, it may be necessary to use a fluorine (F) gas atmosphere (e.g., CF4, CHF3). However, fluorine gas can alter the elemental composition of the surface of the first electrode 110 (e.g., the first electrode 110 containing indium tin oxide (ITO), causing damage to the first electrode 110).

[0236] In some embodiments, such as Figure 18 and Figure 19 As shown, the material of the first sublayer 221 includes inorganic materials.

[0237] For example, the material of the first sublayer 221 can be SiN or SiOx, or of course other inorganic materials.

[0238] Understandably, on the one hand, a thicker inorganic film layer can generate greater stress, causing glass warping or even breakage, which affects the yield of the inorganic film layer. Therefore, when the material of the first sub-layer 221 includes inorganic materials, the size of the first sub-layer 221 along the first direction X can be smaller. This reduces the probability of generating greater stress, avoids glass warping or breakage, and improves the yield of the first sub-layer 221. On the other hand, when the material of the first sub-layer 221 includes inorganic materials, the inorganic materials can be located relatively far away from the substrate 210. In this way, the process of forming the first sub-opening Q1 has a relatively small impact on the first electrode 110. For example, when the process of forming the first sub-opening Q1 is a dry etching process, the above settings can avoid the influence of possible fluorine-containing gas (e.g., CF4, CHF3) atmosphere on the first electrode 110.

[0239] In some embodiments, such as Figure 18 and Figure 19 As shown, the material of the second sublayer 222 includes organic materials.

[0240] For example, the material of the second sublayer 222 can be a cured photoresist or resin material, or of course other organic materials.

[0241] Understandably, on the one hand, organic materials are more likely to form thicker films. When the material of the second sublayer 222 includes organic materials, the size of the second sublayer 222 along the first direction X can be larger. Thus, as mentioned above, the process feasibility and process controllability of forming the second sub-opening Q2 can be improved. On the other hand, through the above arrangement, the second sublayer 222 can form a protective effect above the first electrode 110, reducing the impact of the formation process of the first sublayer 221 on the first electrode 110; for example, it can avoid the influence of possible fluorine-containing gas (e.g., CF4, CHF3) atmosphere on the first electrode 110, so that the fluorine-containing gas will not damage the first electrode 110.

[0242] On the other hand, some embodiments of this disclosure also provide a method for preparing a light-emitting substrate 200, such as... Figure 2 and Figure 24 As shown, the preparation method includes S1 to S2.

[0243] S1: Forming a substrate 210.

[0244] For example, a substrate 210 is formed, including S1.1 to S1.2.

[0245] S1.1: Provide substrate 211.

[0246] S1.2: A driving circuit layer 212 is formed on one side of the substrate 211 along the first direction X.

[0247] In some examples, forming the driving circuit layer 212 includes forming multiple conductive layers and multiple insulating layers. The multiple conductive layers can be configured to form a plurality of pixel driving circuits 2121 and a plurality of signal lines for driving the pixel driving circuits 2121. The multiple insulating layers may include at least one gate insulating layer, at least one interlayer dielectric layer, and at least one planarization layer.

[0248] S2: A pixel defining layer 220 is formed on one side of the substrate 210 along the first direction X. The pixel defining layer 220 includes a plurality of pixel openings Q; the pixel openings Q include a first portion QA and a second portion QB arranged along the first direction X. The first portion QA is further away from the substrate 210 than the second portion QB, and the area of ​​the orthographic projection of the first portion QA onto the substrate 210 is less than or equal to the area of ​​the orthographic projection of the second portion QB onto the substrate 210.

[0249] The beneficial effects that can be achieved by the above-described method for preparing the light-emitting substrate 200 are the same as those that can be achieved by the above-described light-emitting substrate 200, and will not be repeated here.

[0250] In some embodiments, S1A is included after S1 and after S2.

[0251] S1A: A patterned first electrode 110 is formed on one side of the substrate 210 along the first direction X.

[0252] For example, the process of forming the first electrode 110 can be an etching process or a vapor deposition process.

[0253] For example, the material of the first electrode 110 can be a metal oxide material, such as indium tin oxide or indium zinc oxide (IZO).

[0254] It should be understood that, in the case where the fabrication method includes S1A, in S2, the pixel defining layer 220 may be formed on the side of the first electrode 110 away from the substrate 210.

[0255] In some examples, the first part QA and the second part QB can be formed in a single process. For example, when the first cross-section is a trapezoidal cross-section K, the first part QA and the second part QB can be formed in a single etching process. For example, etching using negative photoresist.

[0256] In some other examples, the first portion QA and the second portion QB can be formed using different processes. For example, the pixel defining layer 220 may include a first sub-layer 221 and a second sub-layer 222 including a first sub-aperture Q1 and a second sub-layer 222 including a second sub-aperture Q2. The first portion QA is formed during the formation of the first sub-aperture Q1, and the second portion QB is formed during the formation of the second sub-aperture Q2.

[0257] In some embodiments, such as Figure 25 As shown, the fabrication method further includes forming a patterned first electrode 110. The pixel defining layer 220 includes a first sub-layer 221 and a second sub-layer 222 arranged along a first direction X.

[0258] A pixel defining layer 220 is formed, including S2.1 to S2.5.

[0259] S2.1: A second initial layer 222a is formed on one side of the substrate 210 along the first direction X.

[0260] For example, the material of the second initial layer 222a may be a cured photoresist.

[0261] For example, the process for forming the second initial layer 222a can be a coating process. Moreover, in S2.1, after the coating process, the material of the second initial layer 222a can be cured at high temperature.

[0262] It should be noted that, Figure 25The diagram shows that the second initial layer 222a completely covers the first electrode 110. This is only to illustrate that the second initial layer 222a can be formed on the side of the first electrode 110 away from the substrate 210. In actual applications, the second initial layer 222a may not completely cover the first electrode 110. That is, the second initial layer 222a may include a portion that covers the first electrode 110, or it may include a portion that does not cover the first electrode 110. For example, it may also include a portion located between two adjacent first electrodes 110. There is no limitation here.

[0263] S2.2: A first initial layer 221a is formed on the side of the second initial layer 222a away from the substrate 210.

[0264] For example, the process for forming the first initial layer 221a can be a thin film deposition process, such as chemical vapor deposition (CVD), physical vapor deposition (PVD), atomic layer deposition (ALD), or electroplating.

[0265] S2.3: A mask layer PR is formed on the side of the first initial layer 221a away from the second initial layer 222a, and the mask layer PR exposes the target area on the surface of the first initial layer 221a away from the second initial layer 222a.

[0266] For example, a method for forming a mask layer PR may include: applying photoresist, exposing, and developing to remove material located in the target area.

[0267] S2.4: The first initial layer 221a is etched using a first dry etching process to form the first sublayer 221. The first dry etching process uses a first gas atmosphere.

[0268] For example, the first dry etching process can be a reactive ion etching (RIE) process or an inductively coupled plasma (ICP) process.

[0269] For example, the gas in the first gas atmosphere may include a fluorine-containing gas (e.g., CF4 or CHF3).

[0270] Understandably, during the etching of the first initial layer 221a, the second initial layer 222a can form a protective effect on the surface of the first electrode 110, preventing the first gas atmosphere from damaging the first electrode 110.

[0271] S2.5: Remove the mask layer PR (see...)Figure 25 In step S2.5-1), a second dry etching process is used to etch the second initial layer 222a to form the second sublayer 222. The second dry etching process employs a second gas atmosphere, and the second gas contains at least one of the elements contained in the first electrode.

[0272] For example, the method for removing the mask layer PR is stripping removal.

[0273] For example, the gas in the second gas atmosphere may include oxygen (O2).

[0274] Understandably, during the etching of the second initial layer 222a, the first sublayer 221 formed in S2.4 can serve as a hard mask for the second dry etching process. Furthermore, when the elements contained in the second gas are at least one of the elements contained in the first electrode, the gas in the second gas atmosphere entering the first electrode 110 will not introduce other elements onto the surface of the first electrode 110, thus allowing for higher conductivity of the first electrode 110. For example, the gas in the second gas atmosphere may include oxygen, and the material of the first electrode 110 may include a conductive metal oxide material (e.g., indium tin oxide or indium zinc oxide). When oxygen enters the conductive metal oxide material, it will not introduce other elements onto the surface of the conductive metal oxide material.

[0275] It should be understood that when the second initial layer 222a (e.g., the second initial layer 222a containing organic photoresist) is etched using the second dry etching process, the morphology of the second sub-opening Q2 can be adjusted by the type of dry etching equipment and / or the atmosphere ratio of the etching gas.

[0276] In some examples, the second dry etching process can be a reactive ion etching (RIE) process. The RIE process has a lateral etching effect, which can form a concave morphology on the sidewall of the second sub-opening Q2, making the functional film group 130 in different pixel openings Q discontinuous.

[0277] For example, RIE devices typically have a single radio frequency source, making it difficult to achieve low-damage etching at an appropriate etching rate. The operating gas pressure is relatively high, making it difficult to control the etching morphology. Furthermore, the plasma density is relatively low, resulting in a relatively low etching rate. Therefore, when forming the second sublayer 222 using a RIE device, it is easier to form… Figure 25 The morphology shown in the subgraph corresponding to S2.5-2a.

[0278] In some examples, the second dry etching process can be an inductively coupled plasma (ICP) process. The ICP process has a lateral etching effect, which can form a concave morphology on the sidewall of the second sub-aperture Q2, making the functional film group 130 in different pixel openings Q discontinuous.

[0279] For example, an ICP device can have two independent radio frequency sources, enabling high etching rates and low-damage etching. The operating gas pressure is relatively low, which is beneficial for morphology control, and the plasma density is relatively high. Therefore, when forming the second sublayer 222 using an ICP device, it is easier to form... Figure 25 The morphology shown in the subgraph corresponding to S2.5-2b.

[0280] In some examples, such as Figure 25 As shown, the boundary line between the second sub-aperture Q2 formed by the second dry etching process and the pixel defining layer 220 has a certain curvature.

[0281] For example, such as Figure 25 As shown, the intersection of the second sub-opening Q2 formed by RIE and the pixel defining layer 220 is closer to perpendicular to the intersection of the second sub-opening Q2 formed by ICP process and the pixel defining layer 220 with the substrate 210.

[0282] Understandably, when the pixel defining layer 220 includes steps S2.1 to S2.5, it can prevent the gas in the first gas atmosphere from damaging the first electrode 110 and keep the conductivity of the first electrode 110 at a high level.

[0283] The above description is merely a specific embodiment of this disclosure, but the scope of protection of this disclosure is not limited thereto. Any variations or substitutions conceived by those skilled in the art within the scope of the technology disclosed in this disclosure should be included within the scope of protection of this disclosure. Therefore, the scope of protection of this disclosure should be determined by the scope of the claims.

Claims

1. A light-emitting substrate, characterized by, The application relates to a display device, comprising: a substrate; and a pixel defining layer located on one side of the substrate along a first direction; the pixel defining layer comprises a plurality of pixel openings; the pixel openings comprise a first part and a second part arranged along the first direction; wherein the first part is farther away from the substrate than the second part, and the area of the orthogonal projection of the first part on the substrate is less than or equal to the area of the orthogonal projection of the second part on the substrate.

2. The light emitting substrate of claim 1, wherein, The pixel openings have a first cross section perpendicular to the substrate, and the first cross section comprises a trapezoidal cross section, wherein the size of the side farther away from the substrate is less than or equal to the size of the side closer to the substrate.

3. The light-emitting substrate according to claim 2, characterized in that, The end surface of the pixel opening closer to the substrate comprises a first reference line coplanar with the trapezoidal cross section; the trapezoidal cross section and the pixel defining layer have a first boundary line, and the included angle between the first boundary line and the first reference line is a first angle; the first angle is greater than 0° and less than 90°.

4. The light emitting substrate of claim 3, wherein, The size of the pixel defining layer along the first direction is greater than 0 and less than 1000 nm, and the range of the first angle is 20°-50°; or the size of the pixel defining layer along the first direction ranges from 1 to 3 microns, and the range of the first angle is 30°-70°; or the size of the pixel defining layer along the first direction is greater than 3 microns, and the range of the first angle is 45°-80°.

5. The light emitting substrate of claim 3, wherein, The first boundary line comprises a first curve, the tangent of the first curve and the first reference line form a third angle, and the difference between the maximum value of the third angle and the minimum value of the third angle is greater than 0 and less than or equal to 6°.

6. The light emitting substrate according to any one of claims 2 to 5, characterized in that, Further comprising a plurality of light emitting devices arranged in the plurality of pixel openings; the light emitting devices comprise a first electrode and a second electrode arranged opposite along the first direction, and the first electrode is closer to the substrate than the second electrode; the surface of the first electrode away from the substrate comprises a second reference line coplanar with the trapezoidal cross section; wherein the trapezoidal cross section and the pixel defining layer have a first boundary line; the included angle between the first boundary line and the second reference line is greater than 0° and less than 90°.

7. The light emitting substrate of claim 6, wherein, A gap is arranged between the first electrode and the pixel defining layer; the size of the gap along a second direction ranges from 1 nm to 200 nm; the second direction is perpendicular to the first direction.

8. The light emitting substrate of claim 7, wherein, The light emitting device further comprises a functional film group between the first electrode and the second electrode; the edge of the functional film group close to the pixel defining layer is curved towards the substrate; or the edge of the functional film group close to the pixel defining layer is curved away from the substrate.

9. The light emitting substrate of claim 6, wherein, The light emitting device further comprises a functional film group between the first electrode and the second electrode; A surface of the first electrode away from the substrate includes a first line segment coplanar with the trapezoidal cross section; a surface of the second electrode close to the substrate includes a second line segment coplanar with the trapezoidal cross section; two boundaries of a projection of the first line segment on the substrate correspondingly overlap with two boundaries of a projection of the second line segment on the substrate, and overlap with a boundary of a projection of an end of the pixel opening away from the substrate on the substrate; The first line segment and the second line segment have a first spacing; an absolute value of a difference between the first spacing and a first reference spacing is less than or equal to 20% of the first reference spacing; The first reference spacing is a first spacing corresponding to a center of the first line segment.

10. The light emitting substrate of claim 9, wherein, An edge of a projection of the functional film group on the substrate overlaps with an edge of a projection of the pixel defining layer on the substrate.

11. The light emitting substrate of claim 1, wherein, The pixel defining layer includes a first sub-layer and a second sub-layer arranged along the first direction; the first sub-layer is farther away from the substrate than the second sub-layer; The first sub-layer includes a plurality of first sub-openings; the second sub-layer includes a plurality of second sub-openings; the plurality of second sub-openings correspondingly face the plurality of first sub-openings; edges of the first sub-openings are closer to a center of the pixel opening than edges of the second sub-openings.

12. The light emitting substrate of claim 11, wherein, The first sub-opening has a first sub-cross section perpendicular to the substrate, the first sub-cross section including a trapezoidal cross section, an inverted trapezoidal cross section, or a rectangular cross section; The second sub-opening has a second sub-cross section perpendicular to the substrate, the second sub-cross section including a trapezoidal cross section, an inverted trapezoidal cross section, a rectangular cross section, or a concave cross section.

13. The light emitting substrate of claim 12, wherein, In a case where the second sub-cross section includes a concave cross section, the concave cross section and the pixel defining layer have a second boundary line, a normal line of a tangent at one end of the second boundary line and a normal line of a tangent at the other end of the second boundary line have a second angle; the second angle ranges from 20° to 90°.

14. The light emitting substrate of claim 13, wherein, In a case where the second sub-cross section includes a plurality of concave cross sections, a second angle corresponding to a concave cross section farther away from the substrate is greater than or equal to a second angle corresponding to a concave cross section closer to the substrate.

15. The light emitting substrate of claim 11, wherein, A dimension of the first sub-layer along the first direction is less than a dimension of the second sub-layer along the first direction.

16. The light emitting substrate of claim 15, wherein, The dimension of the first sub-layer along the first direction is greater than or equal to 10 nm and less than or equal to 200 nm; and / or, the dimension of the second sub-layer along the first direction is greater than 0.5 μm and less than or equal to 10 μm.

17. The light emitting substrate of claim 11, wherein, A material of the first sub-layer includes an inorganic material; and / or, a material of the second sub-layer includes an organic material.

18. The light emitting substrate of any of claims 11-17, wherein, Further comprising: a common film group located on a surface of the pixel defining layer away from the substrate; and, a plurality of light emitting devices located in the plurality of pixel openings; The light emitting device includes: a first electrode and a second electrode arranged opposite along the first direction; and, a functional film group located between the first electrode and the second electrode; At least some of the film layers in the functional film group are the same layer and material as the common film group, and the film group in the functional film group that is the same layer and material as the common film group is disconnected from the common film group.

19. A method of manufacturing a light-emitting substrate, characterized by, Comprise: forming a substrate substrate; and, forming a pixel defining layer on one side of the substrate substrate along a first direction; The pixel defining layer comprises a plurality of pixel openings; The pixel openings include a first portion and a second portion arranged along the first direction; Wherein, the first portion is farther away from the substrate substrate than the second portion, and the area of the orthogonal projection of the first portion on the substrate substrate is less than or equal to the area of the orthogonal projection of the second portion on the substrate substrate.

20. The method of claim 19, wherein the light-emitting substrate is prepared by a method comprising: Also include: forming a patterned first electrode; The pixel defining layer comprises a first sub-layer and a second sub-layer arranged along the first direction; The forming of the pixel defining layer comprises: forming a second initial layer on one side of the substrate substrate along a first direction; forming a first initial layer on the side of the second initial layer away from the substrate substrate; forming a mask layer on the side of the first initial layer away from the second initial layer, the mask layer exposing a target area of the surface of the first initial layer away from the second initial layer; using a first dry etching process to etch the first initial layer to form a first sub-layer; and remove the mask layer, and use a second dry etching process to etch the second initial layer to form a second sub-layer; Wherein, the first dry etching process uses a first gas atmosphere, and the second dry etching process uses a second gas atmosphere, and the second gas contains at least one element same as at least one element contained in the first electrode.

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