Particle pollution standard wafer and preparation system, method and application thereof

Abstract

The invention provides a particle pollution standard wafer and a preparation system and method and application thereof. Comprising an atomization module, a drying module and a spraying module which are sequentially connected. The spraying module comprises a particle spraying cavity, and an electromagnetic valve, a nozzle and a platform for bearing a wafer are arranged in the particle spraying cavity; one end of the electromagnetic valve is connected with an inlet of the nozzle, and the other end is connected with the drying module through a spraying gas circuit; an outlet of the nozzle faces the platform; the preparation system further comprises a flow control module, and the flow control module is arranged on the spraying gas path and used for controlling the flow speed of the aerosol flowing from the drying module to the spraying module. By introducing the 3D spraying technology, distribution and patterning spraying of particles on the wafer can be accurately controlled, rapid spraying of particle patterns with different particle sizes is achieved, and therefore preparation of standard wafers polluted by particles with single particle size and particles with multiple particle sizes is compatible. The method is simple, easy to operate and efficient.

Description

TECHNICAL FIELD

[0001] The present application relates to a controllable nanoparticle spraying process, in particular to a particle pollution standard wafer and a preparation system and method thereof and application. BACKGROUND

[0002] Different particle pollutants of different particle sizes are introduced in different links of the whole semiconductor manufacturing process, which greatly affects the product yield, so standard particle pollution detection machines are needed in all links for real-time monitoring. However, the measurement accuracy of the detection machine will decrease with the increase of the detection time, so the machine needs to be calibrated regularly using particle pollution standard wafers to ensure the accuracy of the measurement and maintain the product yield.

[0003] The existing particle pollution standard wafers mainly have single-particle-size random distribution and multi-particle-size spot distribution (as shown in Figs. 1 and 2), wherein the multi-particle-size wafer needs to controllably prepare a fixed area on a wafer containing different numbers and different particle sizes of particle spots. The existing method generally uses a special-shaped spray head for spraying, which cannot accurately control the number of particles. Meanwhile, the two types of standard wafers are prepared by mechanical switching on the same machine, which is complex to operate and difficult to control. Figure 1 and Figure 2 Therefore, it is urgent to provide a preparation system or a preparation method which can be compatible with the preparation of single-particle-size particle pollution standard wafers and multi-particle-size particle pollution standard wafers.

[0004] Therefore, it is urgent to provide a preparation system or a preparation method which can be compatible with the preparation of single-particle-size particle pollution standard wafers and multi-particle-size particle pollution standard wafers. SUMMARY

[0005] In view of the deficiencies in the prior art, the present application provides a particle pollution standard wafer and a preparation system and method thereof and application. By introducing 3D spraying technology, the present application can accurately control the distribution and patterned spraying of particles on the wafer, realize rapid spraying of particle patterns of different particle sizes, and thus be compatible with the preparation of single-particle-size and multi-particle-size particle pollution standard wafers. The method is simple, easy to operate and efficient.

[0006] The present application provides a preparation system for a particle pollution standard wafer, which comprises an atomization module, a drying module and a spraying module connected in sequence; the spraying module comprises a particle spraying cavity, the inside of the particle spraying cavity is provided with an electromagnetic valve, a nozzle and a platform for carrying a wafer; one end of the electromagnetic valve is connected with the inlet of the nozzle, and the other end is connected with the drying module through a spraying gas circuit; the outlet of the nozzle is opposite to the platform; the preparation system further comprises a flow control module, which is arranged on the spraying gas circuit and used for controlling the flow rate of the aerosol flowing from the drying module to the spraying module.

[0007] In some embodiments, the atomization module comprises an atomizer; the atomizer contains a dilute liquid containing dispersed particles, and is provided with a gas inlet and a gas outlet, and the atomizer is used to atomize the dilute liquid.

[0008] In some embodiments, the atomization module comprises an atomizer; the atomizer contains a dilute liquid containing dispersed particles, and is provided with a gas inlet and a gas outlet, and the atomizer is used to atomize the dilute liquid.

[0009] In some embodiments, the drying module comprises a normal-temperature diffusion drying tube, which is used to dry the atomized gas into an aerosol.

[0010] In some embodiments, the flow control module comprises an aerosol flow meter.

[0011] In some embodiments, the spraying gas circuit comprises a flexible conductive pipeline or a rigid conductive pipeline.

[0012] In the present application, the electromagnetic valve and the nozzle belong to the spraying elements of 3D printing.

[0013] In some embodiments, the electromagnetic valve is provided with an air extraction passage, which is used to realize the switching of gas circuit cleaning and aerosol conduction.

[0014] In some embodiments, the type of the nozzle comprises a jet type or a cone type.

[0015] In specific embodiments, the nozzle is provided with a sheath gas auxiliary structure, which comprises a sheath gas circuit arranged at the outlet end of the nozzle, so as to complete the spraying of the aerosol; when spraying single-particle-size particles, the nozzle has a larger diameter; when spraying multi-particle-size particles, the nozzle has a smaller diameter, which is convenient for pattern production.

[0016] In some embodiments, the longitudinal section of the platform is in a stepped shape, which is used to carry wafers of different sizes; the standard and customized processing of the same platform mechanical compatible full-size wafers is realized, so as to improve the adaptability of the equipment in different processing scenes.

[0017] The present application also provides a preparation method of a single-particle-size particle pollution standard wafer, which adopts the preparation system as described above, and comprises the following steps:

[0018] S1, the dilute liquid containing dispersed particles is atomized by the atomization module, and then carried into the drying module by the carrier gas to obtain an aerosol;

[0019] S2, the aerosol is introduced into a spraying gas circuit, and the flow rate of the aerosol is controlled by the flow control module.

[0020] S3, adjusting the working conditions and parameters of the electromagnetic valve and the nozzle, and spraying the aerosol on the wafer to obtain a single-particle-size particle contamination standard wafer.

[0021] In the present application, preferably, the dispersed particles have uniform particle sizes.

[0022] In some embodiments, in step S1, the dispersed particles include polystyrene particles and / or silica particles.

[0023] In the present application, the dispersed particles can be nanoscale, which can also be referred to as nanospheres.

[0024] In some embodiments, in step S1, the dispersed particles have particle sizes of 20-3000 nm.

[0025] In some embodiments, in step S1, the concentration of the dispersed particles in the dispersed particle stock solution is 1%-4%, which refers to the mass percentage of the dispersed particles to the dispersed particle stock solution.

[0026] In some embodiments, in step S1, the content of the dispersed particles in the dispersed particle stock solution is 10 8 -10 13 particles / mL; wherein the unit mL refers to the volume of the dispersed particle stock solution, and the unit particle refers to the number of dispersed particles.

[0027] In some embodiments, in step S1, the diluent used for the dilution solution of the dispersed particles is deionized water or ultrapure water; using the diluent, the dispersed particle stock solution can be diluted to the required concentration.

[0028] In some embodiments, in step S1, the concentration of the dilution solution of the dispersed particles is 10 -3 -50 μL / mL; the concentration of the dilution solution is calculated by dividing the volume of the dispersed particle stock solution by the volume of the diluent.

[0029] In some embodiments, in step S1, the atomization module includes an atomizer, which is an ultrasonic atomizer or a pneumatic atomizer.

[0030] In some embodiments, in step S1, the drying module includes a normal-temperature diffusion drying tube, and the maximum flow rate of the normal-temperature diffusion drying tube is 4 L / min.

[0031] In the present application, the carrier gas can be a clean gas.

[0032] In some embodiments, in step S1, the carrier gas includes nitrogen, argon, or air.

[0033] In the present application, the wafer is patterned by adjusting the flow rate of the aerosol in the spraying gas path.

[0034] In step S2 of the present application, the flow rate of the aerosol in the spraying gas path is controlled by an aerosol flow meter.

[0035] In some embodiments, in step S2, the flow rate of the aerosol in the spraying gas path is 0.1-4 L / min.

[0036] In some embodiments, in step S2, the spraying gas path has good electrical conductivity, which includes a flexible conductive tube or a rigid conductive tube; preferably, the rigid conductive tube includes a stainless steel tube.

[0037] In the present application, the wafer is patterned by adjusting the electromagnetic valve parameters and the nozzle parameters (such as: nozzle type, its distance from the wafer height, movement form and movement speed, etc.).

[0038] In some embodiments, in step S3, the electromagnetic valve can achieve precise control of the flow rate of the aerosol, which includes a three-way blow valve.

[0039] In some embodiments, in step S3, the nozzle is provided with a sheath gas auxiliary structure, which includes a sheath gas path at the outlet end of the nozzle. By adjusting the sheath gas path, the flow rate of the aerosol during spraying is 0.1-4 L / min.

[0040] In some embodiments, in step S3, the material of the nozzle is metal, and the type of the nozzle is jet type or cone type.

[0041] In step S3 of the present application, by setting the spraying height and the working conditions and parameters of the special nozzle movement path, the distribution of the particles on the wafer and the patterned spraying are realized in a numerical control manner.

[0042] In some embodiments, in step S3, the distance between the nozzle and the wafer placed on the platform is 0.1-2 cm.

[0043] In some embodiments, in step S3, the movement path of the nozzle is zigzag or arch-shaped.

[0044] In some embodiments, in step S3, the movement speed of the nozzle is 0.1-2 cm / s.

[0045] In some embodiments, in step S3, the pattern of the aerosol sprayed on the wafer is a circle with a diameter of 5-15 cm.

[0046] In the present application, by specific spraying route planning, spraying parameter setting, aerosol gas path design and wafer table design, the compatible preparation of particle pollution standard wafers of full particle size (including single particle size and multiple particle sizes) distribution is realized.

[0047] The present application also provides a single-particle-size particle pollution standard wafer prepared by the preparation method described above.

[0048] The present application also provides a preparation method of a multiple-particle-size particle pollution standard wafer, which uses the preparation system described above and comprises the following steps:

[0049] S1, the dilute solution containing the first particles is atomized by the atomization module and then carried into the drying module by the carrier gas to obtain the first aerosol;

[0050] S2, the first aerosol is introduced into the spraying gas path, and the flow rate of the first aerosol is controlled by the flow control module;

[0051] S3, the parameters of the electromagnetic valve and the nozzle are adjusted, and the first aerosol is sprayed on the wafer;

[0052] S4, after the spraying gas path is purged by the carrier gas; steps S1-S3 are repeated, and particles of several particle sizes different from the particle size of the first particles are sprayed on the wafer in sequence to prepare a multiple-particle-size particle pollution standard wafer.

[0053] In the present application, the particle size of the first particles is uniform, and the particle size of each particle size is uniform.

[0054] In step S4 of the present application, the spraying gas path is purged by the carrier gas to remove the first particles remaining in the spraying gas path, so as to avoid mixing different particle sizes in the particles to be sprayed in the subsequent spraying.

[0055] In the present application, those skilled in the art should understand that when the multiple-particle-size particle pollution standard wafer has two particle sizes, i.e. the first particles and the second particles, according to the above steps, steps S1-S3 are repeated once; when the multiple-particle-size particle pollution standard wafer has three particle sizes, i.e. the first particles, the second particles and the third particles, according to the above steps, the spraying gas path is first purged by the carrier gas, then step S1-S3 is repeated once with the second particles as the spraying material, and then the spraying gas path is purged by the carrier gas again, and step S1-S3 is repeated once with the third particles as the spraying material.

[0056] The present application also provides a multiple-particle-size particle pollution standard wafer prepared by the preparation method described above.

[0057] The application also provides application of the single-particle-size particle pollution standard wafer or the multi-particle-size particle pollution standard wafer in monitoring a semiconductor manufacturing process.

[0058] Compared with the prior art, the application has the beneficial effects that:

[0059] If a specific-shaped shower head in the prior art is used for spraying, the number of spraying cannot be accurately controlled, and if different shape spots need to be sprayed, different shower heads need to be switched, which affects the preparation efficiency. Compared with the prior art, the application introduces 3D spraying technology, which can accurately control the spraying path and speed, thereby accurately controlling the distribution and patterning of particles on the wafer, and quickly obtaining accurate particle spots of different shapes and different numbers. BRIEF DESCRIPTION OF DRAWINGS

[0060] Figure 1 Structure diagram of single-particle-size particle random distribution;

[0061] Figure 2 Structure diagram of multi-particle-size particle spot distribution;

[0062] Figure 3 Structure diagram of a particle pollution standard wafer preparation system according to an embodiment of the application;

[0063] Figure 4 View of a 12-inch single-particle-size particle pollution standard wafer according to an embodiment of the application;

[0064] Figure 5 View of a 12-inch multi-particle-size particle pollution standard wafer according to an embodiment of the application.

[0065] Explanation of reference signs:

[0066] First diluent 11, atomizer 12, clean gas 13, diffusion dryer 14, aerosol flowmeter 15, spraying gas circuit 21, electromagnetic valve 22, metal nozzle 23, sheath gas circuit 24, particle spraying cavity 25, and compatible wafer platform 26. DETAILED DESCRIPTION

[0067] The specific embodiments of the application are given below. The specific embodiments are only used to further illustrate the application and do not limit the protection scope of the claims of the present application.

[0068] The embodiment of the present application discloses a particle pollution standard wafer preparation system, which comprises an atomization module, a drying module and a spraying module connected in sequence; the spraying module comprises a particle spraying cavity, the inside of the particle spraying cavity is provided with an electromagnetic valve, a nozzle and a platform for carrying a wafer; one end of the electromagnetic valve is connected with the inlet of the nozzle, and the other end is connected with the drying module through a spraying gas path; the outlet of the nozzle is opposite to the platform; the preparation system further comprises a flow control module, which is arranged on the spraying gas path and is used for controlling the flow rate of the aerosol flowing from the drying module to the spraying module.

[0069] In the preparation system of the embodiment, the 3D spraying technology is introduced, the spraying path and speed can be accurately controlled, the distribution and patterned spraying of particles on the wafer can be accurately controlled, and the accurate particle spot distribution with different shapes and different quantities can be quickly obtained.

[0070] Preferably, the atomization module comprises an atomizer, the atomizer contains a diluent containing dispersed particles, and is provided with a gas inlet and a gas outlet. The atomizer is used for atomizing the diluent.

[0071] Preferably, the drying module comprises a normal-temperature diffusion drying pipe, which is used for drying the atomized gas into an aerosol.

[0072] Preferably, the spraying gas path comprises a flexible conductive pipeline or a rigid conductive pipeline.

[0073] Preferably, the electromagnetic valve is provided with an air extraction passage, which is used for realizing the switching of gas path cleaning and aerosol conduction.

[0074] Preferably, the type of the nozzle comprises a jet type or a cone type.

[0075] Preferably, the longitudinal section of the platform is in a stepped shape, which is used for carrying wafers with different sizes.

[0076] The embodiment also discloses a particle pollution standard wafer preparation method, which adopts the preparation system and comprises the following steps.

[0077] s1, nano-microsphere aerosol preparation: a single particle size dispersed particle stock solution is diluted to a certain concentration in a diluent to form a first diluent 11; then the first diluent 11 is atomized by an atomizer 12 in the atomization module, and clean gas 13 serving as a carrier gas passes through a diffusion dryer 14 of the drying module to form a first aerosol with a certain flow rate;

[0078] s2, monodisperse particle controllable spraying: the first aerosol is conducted from the self-diffusion dryer 14 to the spraying gas path 21, first through the aerosol flow meter 15 to control the flow rate of the first aerosol, then through adjusting the parameters of the electromagnetic valve 22 and the parameters of the metal nozzle 23 (such as nozzle type, distance from wafer height, movement form, movement speed) to control the outlet position and outlet state of the aerosol at the metal nozzle 23, and then adjusting the flow rate of the carrier gas in the sheath gas path 24 to perform patterned spraying on different size wafers on the compatible wafer platform 26 in the particle spraying cavity 25.

[0079] According to the above steps s1 and s2, monodisperse particles can be sprayed on the wafer surface, thereby realizing the preparation of a monodisperse particle contaminated standard wafer.

[0080] s3, when multiple particle size particles need to be spot sprayed, after the above steps of single particle size particle spraying, the electromagnetic valve gas path is switched to the exhaust mode, the spraying gas path 21 is cleaned with clean gas, then the electromagnetic valve gas path is switched to the spraying mode, other particle size particle stock solution is replaced, the above steps are repeated to perform spraying through the metal nozzle again, a wafer with multiple particle size particle distribution is obtained, and the preparation of a multiple particle size particle contaminated standard wafer is realized.

[0081] In step s1, preferably, the dispersed particles in the dispersed particle stock solution are polystyrene particles and / or silica particles.

[0082] In step s1, preferably, the particle size of the dispersed particles in the dispersed particle stock solution is 20-3000 nm.

[0083] In step s1, preferably, the concentration of the dispersed particles in the dispersed particle stock solution is 1%-4%, which refers to the mass percentage of the dispersed particles to the dispersed particle stock solution.

[0084] In step s1, preferably, the content of the dispersed particles in the dispersed particle stock solution is 10 8 ~10 13 particles / mL; wherein the unit mL refers to the volume of the dispersed particle stock solution, and the unit particle refers to the number of dispersed particles.

[0085] In step s1, preferably, the diluent is deionized water or ultrapure water.

[0086] In step s1, preferably, the concentration of the first diluent is 10 -3 ~50 μL / mL; the concentration of the diluent is calculated by dividing the volume of the dispersed particle stock solution by the volume of the diluent.

[0087] In step s1, preferably, the atomizer is an ultrasonic atomizer or a pneumatic atomizer.

[0088] In step s1, preferably, the dryer is a normal temperature diffusion drying tube, and the maximum total flow rate is 4 L / min.

[0089] In step s1, preferably, the clean gas is high-purity nitrogen, argon or clean air.

[0090] In step s1, preferably, the flow rate of the first aerosol is 0.1-4 L / min.

[0091] In step s2, preferably, the spraying gas circuit is a pipe with good electrical conductivity, such as a flexible conductive pipe or a stainless steel pipe.

[0092] In step s2, preferably, the electromagnetic valve includes a three-way blow-off valve, which includes three ports, two of which are connected to the nozzle and the dryer, respectively, and the other port is an air outlet for discharging excess aerosol.

[0093] In step s2, preferably, the flow rate of the aerosol in the spraying gas circuit is 0.1-4 L / min.

[0094] In step s2, preferably, the type of metal nozzle is jet type or cone type.

[0095] In step s2, preferably, the distance between the metal nozzle and the wafer placed on the platform is 0.1-2 cm.

[0096] In step s2, preferably, the flow rate of the sheath gas circuit is adjusted to 0.1-4 L / min.

[0097] In step s2, preferably, the moving path of the metal nozzle is zigzag or arch-shaped.

[0098] In step s2, preferably, the moving speed of the metal nozzle is 0.1-2 cm / s.

[0099] In step s2, preferably, the compatible wafer platform is a stepped wafer support table.

[0100] In step s2, preferably, the different size wafers are full-size wafers.

[0101] In step s2, preferably, the pattern on the wafer is in the form of a 5-15 cm diameter circle.

[0102] In step s3, preferably, the clean gas is high-purity nitrogen, argon or air.

[0103] In step s3, preferably, the moving form of the metal nozzle is spiral.

[0104] In step s3, preferably, the moving speed of the metal nozzle is 0.1-2 cm / s.

[0105] In step s3, preferably, the pattern on the wafer is in the form of a 2-5 cm diameter circle or a square.

[0106] In step s3, preferably, the dilution concentrations of the particles of different sizes are different, and the concentration of each particle size dilution ranges from 10 -3 to 50 μL / mL.

[0107] In the 3D spraying preparation method of the particle contamination standard wafer in this embodiment, a particle contamination standard wafer with different particle size distributions is prepared by specific spraying path planning, spraying parameter setting, aerosol gas path design, and wafer platform design.

[0108] Embodiment 1

[0109] This embodiment discloses a preparation method of a single particle size particle contamination standard wafer, which uses a particle contamination standard wafer preparation system. Figure 3 FIG. 1 is a structural schematic diagram of the particle contamination standard wafer preparation system in this embodiment.

[0110] The preparation system comprises an atomization module, a drying module, and a spraying module connected in sequence; the spraying module comprises a particle spraying cavity, the inside of the particle spraying cavity is provided with a solenoid valve, a nozzle, and a platform for carrying a wafer; one end of the solenoid valve is connected with the inlet of the nozzle, and the other end is connected with the drying module through a spraying gas path; the outlet of the nozzle is opposite to the platform; the preparation system further comprises a flow control module, which is arranged on the spraying gas path and is used to control the flow rate of the aerosol flowing from the drying module to the spraying module.

[0111] The atomization module comprises an atomizer, the atomizer contains a dilution liquid containing dispersed particles, and is provided with a gas inlet and a gas outlet; the atomizer is used to atomize the dilution liquid.

[0112] The drying module comprises a normal temperature diffusion drying pipe, which is used to dry the atomized gas into an aerosol.

[0113] The flow control module comprises an aerosol flow meter.

[0114] The spraying gas path comprises a flexible conductive pipeline or a rigid conductive pipeline.

[0115] The solenoid valve is provided with an air extraction passage, which is used to switch between gas path cleaning and aerosol conduction.

[0116] The type of the nozzle comprises a jet type or a cone type; the nozzle is provided with a sheath gas auxiliary structure, the sheath gas auxiliary structure comprises a sheath gas path arranged at the outlet end of the nozzle, so as to complete the spraying of the aerosol.

[0117] The longitudinal section of the platform is in a stepped shape, and is used for carrying wafers of different sizes.

[0118] The preparation method comprises the following steps:

[0119] s1, adding ultrapure water to a monodisperse polystyrene particle stock solution with a solid content of 2% and a particle size of 100 nm, and diluting the stock solution to a diluent with a concentration of 0.1 μL / mL; then, using a pneumatic atomizer to atomize the diluent, and accompanying clean air through a diffusion dryer to form an aerosol with 0.6 L / min.

[0120] s2, connecting the aerosol to a spraying gas path, controlling the flow direction of the aerosol by adjusting a solenoid valve, and passing through a jet type nozzle, the nozzle being 1 cm away from the wafer in height, using a zigzag moving mode, the moving speed being 2 cm / s, and setting the flow of the gas in the sheath gas path to be 0 L / min; and finally obtaining a single-particle-size particle pollution standard wafer; and obtaining the visual Figure 4 , Figure 4 It is a visual view of the 12-inch single-particle-size particle pollution standard wafer of the present embodiment.

[0121] Embodiment 2

[0122] The present embodiment discloses a preparation method of a multi-particle-size particle pollution standard wafer, which uses the particle pollution standard wafer preparation system of embodiment 1, and comprises the following steps:

[0123] s1, adding ultrapure water to monodisperse polystyrene particle stock solutions with a solid content of 2% and a particle size of 92, 100, 200, 300 and 500 nm, and diluting the stock solutions to diluents with a concentration of 0.1, 0.1, 1, 3 and 5 μL / mL respectively; then, using a pneumatic atomizer to atomize the diluent with a concentration of 0.1 μL / mL and a particle size of 92 nm, and accompanying clean air through a diffusion dryer to form an aerosol with 0.6 L / min.

[0124] s2, connecting the aerosol to a spraying gas path, controlling the flow direction of the aerosol by adjusting a solenoid valve, and passing through a jet type nozzle, the nozzle being 1 cm away from the wafer in height, using a zigzag moving mode, the moving speed being 2 cm / s, and setting the flow of the gas in the sheath gas path to be 1 L / min, and obtaining a circle with a diameter of 2 cm on the wafer;

[0125] s3, then cleaning the spraying gas path with clean gas, and then switching the 100, 200, 300 and 500 nm particle stock solutions in turn to repeat the above steps to spray again, and obtain a multi-particle-size particle pollution standard wafer; during the process, the moving path of the nozzle is in a spiral shape, which is different from the zigzag moving path of step s2;

[0126] obtaining the visualFigure 5 , Figure 5 Figure 12 is a view of a 12-inch multi-particle size particle contamination standard wafer of the present embodiments.

[0127] The 3D spray technology introduced in Example 1 and Example 2 allows for precise control of the spray path and speed, thereby enabling precise control of the distribution of particles on the wafer and patterned spraying, and rapid achievement of accurate distributions of particles spots of different shapes and numbers.

Claims

1. A system for preparing a particulate-contaminated standard wafer, comprising an atomization module, a drying module, and a spraying module connected in sequence; characterized in that, The spraying module includes a particle spraying chamber, inside which are provided a solenoid valve, a nozzle, and a platform for supporting the wafer; one end of the solenoid valve is connected to the inlet of the nozzle, and the other end is connected to the drying module through a spraying air passage; the outlet of the nozzle is directly opposite the platform. The preparation system also includes a flow control module, which is located on the spraying gas path and is used to control the flow rate of the aerosol flowing from the drying module to the spraying module.

2. The preparation system according to claim 1, characterized in that, The preparation system satisfies at least one of the following conditions: i. The atomizing module includes an atomizer containing a diluent with dispersed particles, and is provided with a gas inlet and a gas outlet; the atomizer is used to atomize the diluent. ii. The drying module includes a room temperature diffusion drying tube, used to dry the atomized gas into an aerosol; iii. The spraying air path includes a flexible conductive pipe or a rigid conductive pipe; iv. The solenoid valve is provided with an air extraction passage for switching between air path cleaning and aerosol conduction; v. The type of nozzle includes jet type or cone type; vi. The longitudinal section of the platform is stepped, which is used to support wafers of different sizes.

3. A method for preparing a standard wafer contaminated with single-size particles, characterized in that, It employs the preparation system as described in claim 1 or 2, and includes the following steps: S1. The diluted solution containing dispersed particles is atomized by the atomization module and then carried into the drying module by the carrier gas to obtain an aerosol; S2. The aerosol is introduced into the spraying air path, and the flow rate of the aerosol is controlled by the flow control module. S3. Adjust the operating conditions and parameters of the solenoid valve and the nozzle to spray the aerosol onto the wafer to obtain a standard wafer with single-diameter particle contamination.

4. The preparation method according to claim 3, characterized in that, Step S1 satisfies at least one of the following conditions: i. The dispersed particles include polystyrene particles and / or silica particles; ii. The particle size of the dispersed particles is 20-3000 nm; iii. The concentration of the dispersed particles in the dispersed particle stock solution is 1% to 4%, where % refers to the mass percentage of the dispersed particles to the dispersed particle stock solution; iv. The content of the dispersed particles in the dispersed particle stock solution is 10. 8 ~10 13 particles / mL; v. The diluent used in the diluent solution for the dispersed particles is deionized water or ultrapure water; vi. The concentration of the diluent for the dispersed particles is 10. -3 ~50μL / mL; vii. The atomization module includes an atomizer, which is an ultrasonic atomizer or a pneumatic atomizer; viii. The drying module includes a room temperature diffusion drying tube, and the maximum flow rate of the room temperature diffusion drying tube is 4L / min; iw, the carrier gas includes nitrogen, argon or air.

5. The preparation method according to claim 3, characterized in that, In step S2, the flow rate of the aerosol in the spraying air path is 0.1-4 L / min; The spraying air path includes a flexible conductive tube or a rigid conductive tube.

6. The preparation method according to claim 3, characterized in that, Step S3 satisfies at least one of the following conditions: i. The solenoid valve includes a three-way blow-off valve; ii. Adjust the solenoid valve to control the aerosol flow rate to 0.1-4 L / min; iii. The nozzle is made of metal and is of either jet type or cone type; iv. The distance between the nozzle and the wafer placed on the platform is 0.1-2 cm; v. The movement path of the nozzle is zigzag or bow-shaped; vi. The moving speed of the nozzle is 0.1-2 cm / s; vii. The pattern of the aerosol sprayed on the wafer is a circle with a diameter of 5-15 cm.

7. A standard wafer contaminated with single-diameter particles, characterized in that, It is prepared by the preparation method described in any one of claims 3-6.

8. A method for preparing a standard wafer contaminated with multi-size particles, characterized in that, It employs the preparation system as described in claim 1 or 2, and includes the following steps: S1. The diluted solution containing the first particle is atomized by the atomization module and then carried into the drying module by the carrier gas to obtain the first aerosol; S2. The first aerosol is introduced into the spraying air path, and the flow rate of the first aerosol is controlled by the flow control module. S3. Adjust the parameters of the solenoid valve and the nozzle to spray the first aerosol onto the wafer; S4. After purging the spraying air path with carrier gas, repeat steps S1 to S3 to sequentially spray particles of several different sizes than the first particle onto the wafer, thereby producing a standard wafer contaminated with multi-size particles.

9. A standard wafer contaminated with multi-size particles, characterized in that, It is prepared by the method described in claim 8.

10. The application of a single-size particle contamination standard wafer as described in claim 7 or a multi-size particle contamination standard wafer as described in claim 9 in monitoring semiconductor manufacturing processes.

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