Microwave light conversion device and conversion method thereof

Abstract

The invention relates to a microwave light conversion device and a conversion method thereof, and the microwave light conversion device comprises a semiconductor film, a silicon substrate, a support, a magnetic device and an optical device. According to the microwave light conversion device and the conversion method thereof provided by the invention, on one hand, the dependence on an extremely low temperature environment is thoroughly eliminated, stable operation at room temperature is realized, and the complexity and the comprehensive cost of a system are greatly reduced; and on the other hand, the conversion efficiency is greatly improved compared with a traditional microwave light conversion device.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of quantum information processing, microwave-optical conversion technology and magnonics-optomechanics, and in particular to a microwave-optical conversion device and a conversion method thereof. BACKGROUND

[0002] The development of quantum information technology has put forward urgent demands for cross-band quantum state transmission and interconnection. Efficient conversion between microwave signals and optical signals is one of the core technical bottlenecks for realizing quantum network construction and long-distance quantum communication. Microwave signals have the advantages of high quantum control precision and good compatibility with solid-state quantum devices such as superconducting quantum bits, while optical signals have the characteristics of low transmission loss over long distances and strong anti-interference capability. Efficient conversion between the two can break through the link between solid-state quantum computing and long-distance quantum communication, and is a key support for quantum information interconnection.

[0003] Current microwave-optical conversion devices are mainly based on single mechanisms such as optical-mechanical coupling, electro-optic effect and magneto-optic effect. However, these implementation mechanisms have many technical limitations: first, traditional optical-mechanical microwave-optical conversion relies on the coupling between photons and mechanical oscillators, which is limited by the fast decay rate of phonons and weak coupling strength, resulting in generally low conversion efficiency, which is difficult to meet the fidelity requirements of quantum state transmission; second, microwave-optical conversion schemes based on superconducting circuits require a dilution refrigerator to provide an extremely low temperature environment (usually below 100 mK), which greatly increases the system complexity and operating cost, limiting the large-scale application and integration of the device; third, existing magneto-optic and electro-optic conversion devices rely on a single coupling channel and lack a mechanism for simultaneous regulation of magnons, phonons and photons, resulting in large energy loss, narrow bandwidth and difficulty in flexible adjustment of coupling strength during the conversion process; fourth, some devices use complex multi-layer heterostructure design, relying on high-precision photolithography and epitaxial growth processes, which have high preparation costs, poor repeatability and are difficult to integrate with existing micro-nano semiconductor processes.

[0004] In recent years, the cross-development of magnonics and optomechanics has provided a new technical path to break through the above bottlenecks. Magnons (quantized units of spin waves in magnetic materials) can be used as carriers of microwave signals, which can efficiently couple with phonons and photons: magnon-phonon coupling can be achieved through the strain interaction between magnetic materials and mechanical oscillators, enabling efficient energy transfer at room temperature, such as magneto-acoustic coupling systems based on yttrium iron garnet (YIG) and other magnetic materials, which have been proven to have low loss and high coupling strength at room temperature; and phonon-photon coupling can be achieved through the radiation pressure interaction between high-strain mechanical oscillators and optical modes, which can significantly improve the efficiency of light-phonon coupling and the quality factor of mechanical oscillators. SUMMARY

[0005] The inventors find that the prior art has not realized the synergistic coupling and efficient regulation of magnons, phonons and photons, and lacks a microwave-optical conversion device structure that can integrate the advantages of the three: existing magnetic-phonon coupling devices only focus on the manipulation of microwave signals or the reading of mechanical oscillators, and do not involve the linkage with photons; traditional optomechanical devices do not utilize the high regulation freedom and room-temperature compatibility of magnons; and magneto-optical conversion devices lack efficient coupling, making it difficult to balance conversion efficiency and environmental adaptability. Therefore, developing a microwave-optical conversion device based on a magnon-phonon-photon synergistic coupling mechanism, which has the characteristics of room-temperature operation, high conversion efficiency, controllable coupling strength and easy integration, becomes the key to solving the current bottleneck of quantum interconnection technology and has important significance for promoting the practical development of quantum information networks.

[0006] According to a first aspect of the present application, a microwave-optical conversion device is provided, characterized in that it comprises: a silicon substrate; a semiconductor thin film located on a first surface of the silicon substrate, the semiconductor thin film comprising an attached portion on the first surface of the silicon substrate and a semiconductor thin film oscillator formed by etching a second surface of the silicon substrate until the semiconductor thin film, the surface of the semiconductor thin film having a microwave circuit; a support comprising a support light hole and a plurality of support mesas, one of the plurality of support mesas being arranged corresponding to the semiconductor thin film oscillator, the other support mesas being connected to the second surface of the silicon substrate, and the support light hole being arranged corresponding to the semiconductor thin film oscillator; a magnetic device located on the support mesa arranged corresponding to the semiconductor thin film oscillator, at a predetermined distance from the semiconductor thin film oscillator; optical components comprising an incident lens and a mirror, the incident lens and the mirror being located on both sides of the semiconductor thin film respectively and arranged corresponding to the semiconductor thin film oscillator, incident light passing through the support light hole and the semiconductor thin film entering the mirror through the incident lens to form an optical resonant cavity; wherein when a microwave signal is input into the microwave circuit, an alternating electromagnetic field formed by the microwave circuit can act on the magnetic device to realize the conversion of the microwave signal to magnons, the magnetic device and the semiconductor thin film oscillator form a dissipative coupling channel for the coupling of magnons and phonons to realize the energy transfer from magnons to phonons; when the semiconductor thin film oscillator resonates under the driving of phonons, the effective cavity length and refractive index distribution of the optical resonant cavity are changed, which can realize the modulation of the incident light according to the information of the microwave signal to generate a modulated light signal.

[0007] According to a second aspect of the present application, a method for implementing microwave-optical conversion by using the microwave-optical conversion device according to the first aspect is provided, and the method comprises the following steps. The microwave circuit on the surface of the semiconductor thin film vibrator is input with the microwave signal, so that the alternating electromagnetic field formed by the microwave circuit acts on the magnetic device, and the energy of the microwave signal is transmitted to the magnon, thereby realizing the conversion of the microwave signal to the magnon. The energy of the microwave signal is transmitted to the semiconductor thin film vibrator through the dissipative coupling mechanism by forming a dissipative coupling channel between the magnetic device and the semiconductor thin film vibrator, so as to realize the energy transmission from the magnon to the phonon; and The effective cavity length and the refractive index distribution of the resonant cavity are changed by the semiconductor thin film vibrator, so as to realize the modulation of the incident light according to the information of the microwave signal, and generate a modulated light signal.

[0008] According to the microwave-optical conversion device and the conversion method provided by the present application, on the one hand, the dependence on the extremely low temperature environment is completely eliminated, the stable operation at room temperature is realized, and the complexity and comprehensive cost of the system are greatly reduced; on the other hand, the conversion efficiency is greatly improved compared with the traditional microwave-optical conversion device. BRIEF DESCRIPTION OF DRAWINGS

[0009] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed in the embodiment description will be briefly introduced. Obviously, the drawings in the following description are only some embodiments of the present application, and other drawings can also be obtained by those skilled in the art according to these drawings without departing from the scope of the present application.

[0010] Figure 1 is a front view of the microwave-optical conversion device according to an embodiment of the present application.

[0011] Figure 2 is a perspective view of the microwave-optical conversion device according to an embodiment of the present application.

[0012] Figure 3 is a microwave circuit diagram of the surface of the semiconductor thin film according to an embodiment of the present application.

[0013] Figure 4 is a preparation flowchart of the microwave circuit on the surface of the semiconductor thin film according to an embodiment of the present application.

[0014] Figure 5 is a flowchart of the method for implementing microwave-optical conversion by using the microwave-optical conversion device according to an embodiment of the present application.

[0015] Figure 6 is a flowchart of the method for implementing microwave-optical conversion by using the microwave-optical conversion device according to another embodiment of the present application.

[0016] Figure 7 is a flow chart of a microwave-optical conversion method implemented by a microwave-optical conversion device according to yet another embodiment of the present application.

[0017] Figure 8 is a flow chart of a microwave-optical conversion method implemented by a microwave-optical conversion device according to yet another embodiment of the present application. DETAILED DESCRIPTION

[0018] The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all the embodiments of the present application. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative work fall within the scope of protection of the present application.

[0019] The present application provides a microwave-optical conversion device, which realizes efficient mutual conversion of microwave signals and optical signals by using a magnon-phonon-photon cooperative coupling mechanism. The device is suitable for cutting-edge science and technology scenarios such as quantum communication, quantum interconnection, and precision measurement.

[0020] As shown in Figure 1 and Figure 2 , the microwave-optical conversion device includes a semiconductor thin film 1, a silicon substrate 2, a support 3, a magnetic device 4, and an optical device. The semiconductor thin film 1 is located on a first surface of the silicon substrate 2. The semiconductor thin film 1 includes an attached portion on the first surface of the silicon substrate 2 and a suspended portion formed by etching a second surface of the silicon substrate 2 until the semiconductor thin film 1, which is referred to as a semiconductor thin film resonator. In one specific embodiment, the semiconductor thin film includes a silicon nitride thin film. The semiconductor thin film resonator can be any suitable size and shape, for example, the semiconductor thin film resonator is a square with a side length ranging from 100 nm to 1000 nm, such as a square of 500 nm x 500 nm. The semiconductor thin film surface has a microwave circuit, and the structure of the microwave circuit is as shown in Figure 3 . In the embodiment shown in Figure 3 , the semiconductor thin film resonator is provided with a ring structure of the microwave circuit, which can be circular, rectangular, or other shapes, and the present application does not make any limitation thereto.

[0021] In one embodiment, as shown in Figure 1 and Figure 2 , the support 3 includes a plurality of support mesas 31 and a support light hole 32. One of the plurality of support mesas 31 is arranged corresponding to the semiconductor thin film resonator, and the other support mesas 31 of the plurality of support mesas 31 are connected to the second surface of the silicon substrate 2. The support light hole 32 is arranged corresponding to the semiconductor thin film resonator.

[0022] In one embodiment, as shown in FIG. 1, the semiconductor thin film microwave circuit 2 is arranged on a support platform 3, and the semiconductor thin film microwave circuit 2 is arranged on the support platform 3 in correspondence with the semiconductor thin film resonator 1. Figure 1 and Figure 2 As shown in FIG. 2, the magnetic device 4 is arranged on the support platform in correspondence with the semiconductor thin film resonator at a preset distance. In one specific embodiment, the magnetic device 4 can include a yttrium iron garnet YIG ball with a diameter of 0.1 to 0.3 mm. The magnetic device 4 is arranged in correspondence with the ring structure of the microwave circuit, and the preset distance can be in the range of 1 micrometer to 1 mm.

[0023] In one embodiment, the optical device can include an incident lens 51 and a mirror 52, which are respectively arranged on both sides of the semiconductor thin film 1 and arranged in correspondence with the semiconductor thin film resonator. The incident light passing through the incident lens enters the mirror through the support light hole 32 and the semiconductor thin film 1, forming an optical resonant cavity, for example, a Fabry-Perot optical cavity.

[0024] Based on the magnon-phonon-photon cooperative coupling mechanism, the present application constructs a complete energy conversion link of microwave-magnon-phonon-photon, and realizes efficient and controllable conversion of microwave signals to optical signals at room temperature through the integrated structure of the semiconductor thin film microwave circuit, the magnetic device, and the semiconductor thin film resonator (mechanical resonator). The semiconductor thin film microwave circuit of the present application serves as a microwave signal input unit. When an external microwave signal is connected to the circuit, an alternating electromagnetic field is formed in the circuit, which can precisely act on the magnetic device (such as a yttrium iron garnet YIG ball). Under the excitation of the alternating electromagnetic field, the magnetic moment in the magnetic functional layer undergoes periodic precession, which in turn excites spin waves. The quantum unit of the spin wave is a magnon, and the energy of the microwave signal is thus completely transferred to the magnon, realizing efficient conversion of the microwave signal to the magnon. This process does not require extremely low-temperature environment, and the room-temperature magnetic stability of the magnetic device (such as the yttrium iron garnet YIG ball) can be used to complete the stable excitation of the magnon at room temperature, completely avoiding the dependence on a dilution refrigerator in the traditional superconducting circuit scheme.

[0025] In the present application, the distance between the magnetic device and the semiconductor thin film vibrator affects the coupling of microwaves and magnons, forming a channel for dissipative coupling, and realizing efficient coupling of magnons and phonons. When microwaves and magnons interact, the energy carried by the microwave signal is transmitted to the semiconductor thin film vibrator through the mechanism of dissipative coupling, driving the semiconductor thin film vibrator to produce resonant vibration. The quantum form of this mechanical vibration is a phonon, and the energy of the magnon is completely transferred to the phonon through non-radiative transition, completing the energy transfer from magnon to phonon. At the same time, the high elastic modulus of the semiconductor thin film (for example, silicon nitride thin film) ensures a high quality factor of the semiconductor thin film vibrator, further improving the coupling efficiency of magnon-phonon, and solving the technical problem of large energy loss in the traditional single coupling mechanism. Unlike traditional magneto-optical conversion, which ignores the role of phonons, in the present application, phonons play a key role in energy transfer, and the high elastic modulus of the silicon nitride thin film ensures a high quality factor of the mechanical vibrator, reducing the loss in the process of energy transfer from magnon to phonon, and realizing complete energy transfer through non-radiative transition.

[0026] The semiconductor thin film vibrator also serves as a medium for phonon-photon coupling. When the semiconductor thin film vibrator resonates under the drive of the phonon, it will drive the cavity wall of the optical resonant cavity to produce periodic displacement, thereby changing the effective cavity length and refractive index distribution of the optical resonant cavity. At this time, the incident light (pump light field) entering the optical resonant cavity is coupled with the vibrating cavity wall through radiation pressure, and the energy carried by the phonon is converted into photon energy through light field modulation, so that the amplitude, frequency or phase of the incident light is modulated by the information of the microwave signal, forming a modulated light signal carrying the original microwave signal information. After being enhanced by the optical resonant cavity, the modulated light signal is stably emitted through the output port, completing the final conversion of the phonon to the light signal and realizing the complete conversion of the microwave signal to the light signal.

[0027] In the present application, during the conversion of phonon to photon, the dual modulation effect of optical mode is superimposed. The resonant vibration of the silicon nitride thin film mechanical vibrator changes the frequency of the optical resonant cavity, realizing phase modulation and intensity modulation of the light field in the cavity, and the two modulations have a phase difference. This special effect can suppress redundant sidebands and optimize light signal purity. At the same time, the high Q factor of the optical resonant cavity (the loading Q factor level can refer to the YIG microcavity (4.7 × 105) of the same kind) greatly reduces the loss of photons in the cavity. After the incident light is modulated, the target light signal is formed, which is enhanced by the resonant cavity and accurately emitted through the light hole of the support, completing the efficient and low-distortion conversion of phonon energy to photon signal.

[0028] Accordingly, the application can also realize conversion from an optical signal to a microwave signal. In an embodiment, the modulated optical signal is input through the entrance lens 51, and is coupled by the radiation pressure of the optical resonant cavity to convert the modulated optical signal into phonons, drive the semiconductor thin film resonator to resonate, and form a dissipative coupling channel between the magnetic device 4 and the semiconductor thin film resonator to realize energy transfer from phonons to magnons, so that the magnons cause the microwave circuit to generate a microwave signal.

[0029] In an embodiment, the microwave-optical conversion device of the application has a multi-dimensional coupling strength regulation capability, and can realize precise regulation through two core modes. In one mode, by changing the input microwave power of the semiconductor thin film microwave circuit, the strength of the alternating electromagnetic field can be regulated, and then the excitation density of the magnon is controlled, and the coupling energy of the magnon-phonon-photon is indirectly regulated; in another mode, by applying an external adjustable magnetic field to the magnetic device, the dispersion relation and propagation speed of the magnon can be changed, so as to adjust the coupling coefficient of the magnon and the phonon, and realize dynamic adaptation of the coupling strength of the whole link. The regulation mechanism breaks through the limitation of the fixed coupling strength of the existing device, and meets the conversion requirements in different quantum interconnection scenarios.

[0030] Figure 4 is a preparation flowchart of the microwave circuit on the surface of the semiconductor thin film according to an embodiment of the application. As shown in Figure 4 , the flowchart includes the following steps.

[0031] (1) A double-etched silicon wafer can be selected as the silicon substrate, and the thickness thereof can be 500 um.

[0032] (2) LPCVD (low pressure chemical vapor deposition) can be used to grow the semiconductor thin film, wherein the thickness of the thin film can be 50 nm-200 nm; the growth parameters include that the temperature can be 700-800 degrees Celsius, for example, 750 degrees Celsius, and the time can be 20-60 min, for example, 33 min.

[0033] (3) Photoresist is spin-coated on the lower surface of the silicon substrate, a laser direct writing pattern is used, the size of the rectangular pattern behind the thin film is designed according to the size of the thin film, and a developing solution is used for development.

[0034] (4) RIE (reactive ion etching) can be used to etch the back silicon nitride, wherein the RIE parameters include that the gas ratio of CHF3:O2 is between 5 and 20, the pressure is 1-3 pa, and the time is 200 s-250 s, for example, the gas ratio of CHF3:O2 is 50:5, the pressure is 2 pa, and the time is 210 s.

[0035] (5) KOH solution can be used to etch silicon, wherein the concentration of KOH is 40%, the temperature is 80°C, and the time is about 4 hours. After the KOH etching is completed, the semiconductor film on the front surface is suspended; piranha solution (concentrated sulfuric acid: hydrogen peroxide = 3:1) is used to clean the surface of the sample; after cleaning, ethanol is used for cleaning, and drying.

[0036] (6) A metal film 20 nm-200 nm is grown on the surface, and the metal can be Al, Nb, Ta, etc.

[0037] (7) A photoresist is spin-coated on the front surface of the sample, and a laser direct writing microwave circuit pattern is developed by a developing solution.

[0038] (8) A corresponding metal is etched by dry etching (such as RIE, ICP-RIE, etc.) or wet etching, etc. to obtain a microwave circuit.

[0039] The application builds a high-efficiency and controllable microwave-optical conversion link at room temperature through three-level synergistic coupling of magnon-phonon-photon, avoids the defects of traditional single coupling mechanism, is compatible with existing micro-nano semiconductor processes, and provides a stable and reliable signal conversion solution for quantum communication, quantum interconnection, etc.

[0040] On the basis of the above microwave-optical conversion device, according to another aspect of the application, a method for implementing microwave-optical conversion by using the microwave-optical conversion device is provided. Figure 5 is a flow chart of a microwave-optical conversion method implemented by a microwave-optical conversion device according to an embodiment of the application. As shown in Figure 5 , the method comprises the following steps: Step S501, inputting a microwave signal into a microwave circuit on the surface of the semiconductor film vibrator, so that an alternating electric field formed by the microwave circuit acts on the magnetic device, so that the energy of the microwave signal is transmitted to magnons, realizing the conversion of the microwave signal to magnons; Step S502, forming a dissipative coupling channel between the magnetic device and the semiconductor film vibrator, transmitting the energy of the microwave signal to the semiconductor film vibrator through the mechanism of dissipative coupling, to realize the energy transmission from magnons to phonons; Step S503, changing the effective cavity length and refractive index distribution of the resonant cavity through the semiconductor film vibrator, to realize the modulation of the incident light according to the information of the microwave signal, and generate a modulated light signal.

[0041] Figure 6 is a flow chart of a microwave-optical conversion method implemented by a microwave-optical conversion device according to another embodiment of the application. Compared with Figure 5 , Figure 6 , the steps S601-S603 of the method shown in Figure 5Steps S501 to S503 are the same, except that... Figure 6 The method shown also includes: Step S604: Input the modulated optical signal through the incident lens; In step S605, the modulated optical signal is converted into phonons through radiation-pressure coupling of the optical resonant cavity to drive the semiconductor thin-film oscillator to resonate. Step S606: Through the dissipative coupling channel formed by the magnetic device and the semiconductor thin film oscillator, energy transfer from phonons to magnetons is realized, thereby causing the magnetons to cause the microwave circuit to generate microwave signals.

[0042] Figure 7 This is a flowchart illustrating a microwave-optical conversion method implemented using a microwave-optical conversion apparatus according to yet another embodiment of this application. Figure 5 compared to, Figure 7 Steps S701 to S703 of the method shown are Figure 5 Steps S501 to S503 are the same, except that... Figure 7 The method shown also includes: Step S704: By changing the power of the microwave signal, the intensity of the alternating electromagnetic field is adjusted, thereby controlling the excitation density of the magnetons, so as to indirectly control the coupling energy of magnetons-phonons-photons.

[0043] Figure 8 This is a flowchart illustrating a microwave-optical conversion method implemented using a microwave-optical conversion apparatus according to another embodiment of this application. Figure 5 compared to, Figure 8 Steps S801 to S803 of the method shown are Figure 5 Steps S501 to S503 are the same, except that... Figure 8 The method shown also includes: Step S804: By applying an external adjustable magnetic field to the magnetic device, the dispersion relation and propagation speed of the magnetic device are changed, thereby adjusting the coupling coefficient between the magneton and the phonon, and thus achieving dynamic adaptation of the coupling strength of the entire link.

[0044] According to the solution of this application, its technical effects include: Firstly, it is completely free from the dependence on extremely low temperature environment, realizes stable operation at room temperature, and greatly reduces the complexity and comprehensive cost of the system. The existing microwave optical conversion scheme based on superconducting circuit must rely on the extremely low temperature environment maintained by the dilution refrigerator, which not only has high purchase cost of refrigeration equipment, but also has problems of high energy consumption and high maintenance difficulty, which seriously limits the large-scale deployment and integrated application of the device. The application adopts a magnetic material (for example, a yttrium iron garnet (YIG) ball with excellent room temperature magnetic stability) as a magnon excitation core component, and an alternating electromagnetic field excitation structure is constructed by matching a semiconductor thin film microwave circuit, so that the excitation process from microwave signal to magnon can be stably completed at room temperature without any low-temperature auxiliary equipment. This breakthrough not only saves the high investment and operation cost of low-temperature refrigeration equipment, but also reduces the adaptation threshold of the device to the use environment, so that it can be flexibly applied to various scenes such as conventional laboratories and quantum communication base stations which lack extreme low temperature conditions, laying a solid foundation for the widespread promotion and large-scale integration of the device. At the same time, under the room temperature working mode, the device structure is more stable, avoiding the special requirements of materials performance in extremely low temperature environment, reducing the possible structural loss and performance fluctuation under low temperature, and further improving the long-term operation reliability of the device.

[0045] Secondly, the conversion efficiency of the application is greatly improved compared with traditional microwave optical conversion devices. Traditional microwave optical conversion devices mostly rely on single mechanisms such as optical mechanical coupling and electro-optic effect, which have the defects of weak coupling strength, large energy loss and low conversion efficiency, and most of them can only realize one-way signal transmission, which is difficult to meet the complex needs of quantum information interconnection. The application adopts an efficient magnon-phonon-photon three-level cooperative coupling link, realizes efficient energy transfer between magnons and phonons through dissipative coupling, completes efficient conversion from phonons to photons by means of radiation pressure coupling, and guarantees high quality factor of mechanical oscillators by high stress of semiconductor thin film, which greatly reduces energy loss in the conversion process, conversion efficiency far exceeds that of traditional microwave optical conversion devices, effectively guarantees the fidelity of quantum state transmission, and meets the core requirements of quantum information processing. The cooperative coupling link has good reversibility, and can flexibly realize bidirectional conversion of microwave signal to optical signal and optical signal to microwave signal, which can not only adapt to the needs of low-loss transmission of optical signal in long-distance quantum communication, but also meet the scene of microwave signal manipulation of quantum bits in solid-state quantum computing, greatly expanding the application range of the device.

[0046] In addition, the application can realize dynamic and precise regulation of coupling strength through adjusting input microwave power and applying external adjustable magnetic field, which can adapt to the differentiated needs of different frontier scenes such as quantum communication and precision measurement, and the adopted LPCVD growth and RIE etching are mature micro-nano preparation processes, which reduce the preparation cost and process difficulty, improve the production repeatability, and are compatible with the existing semiconductor process, which has the practical feasibility of large-scale production.

[0047] In the above embodiments, the description of each embodiment is focused on, and the part not described in detail in a certain embodiment can be referred to the relevant description of other embodiments.

[0048] It should be noted that, for the foregoing method embodiments, in order to simply describe, they are all expressed as a series of action combinations, but those skilled in the art should know that the present application is not limited to the order of the described actions, because according to the present application, certain steps can be performed in other order or at the same time. Secondly, those skilled in the art should know that the embodiments described in the specification are all optional embodiments, and the actions and modules involved are not necessarily required by the present application.

[0049] The above has introduced the embodiments of the present application in detail, and the specific examples are applied to describe the principles and implementation modes of the present application. The above embodiment description is only used to help understand the method and core idea of the present application. Meanwhile, the changes or deformations made by those skilled in the art according to the idea of the present application, based on the specific implementation mode and application range of the present application, all belong to the protection scope of the present application. In summary, the content of the specification should not be understood as a limitation of the present application.

Claims

1. A microwave optical conversion device, characterized in that, include: silicon substrate; A semiconductor thin film is located on a first surface of a silicon substrate. The semiconductor thin film includes an attachment portion on the first surface of the silicon substrate and a semiconductor thin film oscillator formed by etching a second surface of the silicon substrate until the semiconductor thin film is formed. The surface of the semiconductor thin film has a microwave circuit. The support includes a support light-transmitting hole and multiple support platforms, one of which is correspondingly disposed to the semiconductor thin-film oscillator, and the other support platforms are connected to the second surface of the silicon substrate. The support light-transmitting hole is correspondingly disposed to the semiconductor thin-film oscillator. A magnetic device is located on a support platform corresponding to the semiconductor thin-film oscillator, at a predetermined distance from the semiconductor thin-film oscillator; An optical component includes an incident lens and a reflector. The incident lens and the reflector are located on opposite sides of the semiconductor thin film and are correspondingly arranged with the semiconductor thin film oscillator. Incident light through the incident lens passes through the light-transmitting hole of the bracket and the semiconductor thin film and enters the reflector to form an optical resonant cavity. When a microwave signal is input into the microwave circuit, the alternating electromagnetic field generated by the microwave circuit can act on the magnetic device to realize the conversion of microwave signal into magnetic particle. The magnetic device and the semiconductor thin film oscillator form a dissipative coupling channel for the coupling of magnetic particle and phonon to realize the energy transfer from magnetic particle to phonon. When the semiconductor thin-film oscillator resonates under phonon drive, it changes the effective cavity length and refractive index distribution of the optical resonant cavity, enabling the incident light to be modulated according to the information of the microwave signal to generate a modulated optical signal.

2. The microwave optical conversion device as described in claim 1, characterized in that, The modulated optical signal is input through the incident lens and converted into phonons through the radiation pressure coupling of the optical resonant cavity, thereby driving the semiconductor thin-film oscillator to resonate. The dissipative coupling channel formed by the magnetic device and the semiconductor thin-film oscillator enables energy transfer from phonons to magnetons, thereby causing the microwave circuit to generate microwave signals.

3. The microwave optical conversion device as described in claim 1 or 2, characterized in that, The magnetic device includes yttrium iron garnet (YIG) microspheres with a diameter of 0.1 to 0.3 mm.

4. The microwave optical conversion device as described in claim 1 or 2, characterized in that, The semiconductor thin-film oscillator is provided with a ring structure of microwave circuit, and the magnetic device is arranged correspondingly to the ring structure. The preset distance is in the range of 1 micrometer to 1 millimeter.

5. The microwave optical conversion device as described in claim 1 or 2, characterized in that, The semiconductor thin film includes a silicon nitride thin film, and the semiconductor thin film oscillator is square with a side length ranging from 100 nm to 1000 nm.

6. A method for performing microwave-optical conversion using the microwave-optical conversion device as described in any one of claims 1 to 5, characterized in that, include: A microwave signal is input into a microwave circuit on the surface of the semiconductor thin film oscillator, so that the alternating electromagnetic field formed by the microwave circuit acts on the magnetic device, thereby transferring the energy of the microwave signal to the magnetic particle and realizing the conversion of microwave signal to magnetic particle. By forming a dissipative coupling channel between the magnetic device and the semiconductor thin-film oscillator, the energy of the microwave signal is transferred to the semiconductor thin-film oscillator through the dissipative coupling mechanism, thereby realizing the energy transfer from magneton to phonon. as well as By altering the effective cavity length and refractive index distribution of the resonant cavity using the semiconductor thin-film oscillator, the incident light is modulated according to the information of the microwave signal to generate a modulated optical signal.

7. The method as described in claim 6, characterized in that, Also includes: The modulated optical signal is input through the incident lens; The modulated optical signal is converted into phonons through radiation-pressure coupling of the optical resonant cavity, thereby driving the semiconductor thin-film oscillator to resonate. as well as Through the dissipative coupling channel formed by the magnetic device and the semiconductor thin-film oscillator, energy transfer from phonons to magnetons is realized, thereby causing the magnetons to cause the microwave circuit to generate microwave signals.

8. The method as described in claim 6 or 7, characterized in that, Also includes: By changing the power of the microwave signal, the intensity of the alternating electromagnetic field is modulated, thereby controlling the excitation density of the magnetons and indirectly controlling the coupling energy of magnetons-phonons-photons.

9. The method as described in claim 6 or 7, characterized in that, Also includes: By applying an external adjustable magnetic field to the magnetic device, the dispersion relation and propagation speed of the magnetic device are changed, thereby adjusting the coupling coefficient between the magneton and the phonon, and thus achieving dynamic adaptation of the coupling strength across the entire link.

10. The method as described in claim 6 or 7, characterized in that, The magnetic device includes yttrium iron garnet (YIG) microspheres with a diameter of 0.1 to 0.3 mm; the semiconductor thin-film oscillator has a ring structure of the microwave circuit, and the magnetic device is correspondingly arranged with the ring structure, with the preset distance ranging from 1 micrometer to 1 millimeter; the semiconductor thin film includes a silicon nitride thin film, and the semiconductor thin-film oscillator is square with a side length ranging from 100 nm to 1000 nm.

Images