Microwave light conversion device and conversion method thereof

Abstract

The application relates to a microwave-optical conversion device and a conversion method thereof, wherein the microwave-optical conversion device comprises a semiconductor film, a silicon substrate, a support, a magnetic device and an optical device. According to the microwave-optical conversion device and the conversion method thereof provided by the application, on one hand, the dependence on an extremely low temperature environment is completely eliminated, room temperature stable operation is realized, and the complexity and comprehensive cost of the system are greatly reduced; on the other hand, the conversion efficiency is greatly improved compared with a traditional microwave-optical conversion device.

Description

Technical Field

[0001] This application relates to the interdisciplinary fields of quantum information processing, microwave-to-optical conversion technology and magnetonics and optomechanics, and in particular to a microwave-to-optical conversion device and its conversion method. Background Technology

[0002] The development of quantum information technology has created an urgent need for cross-band quantum state transmission and interconnection. Efficient conversion between microwave and optical signals is one of the core technological bottlenecks for building quantum networks and long-distance quantum communication. Microwave signals have advantages such as high precision in quantum manipulation and good compatibility with solid-state quantum devices like superconducting qubits, while optical signals have the characteristics of low transmission loss over long distances and strong anti-interference capabilities. Efficient conversion between the two can bridge the gap between solid-state quantum computing and long-distance quantum communication, providing crucial support for quantum information interconnection.

[0003] Current microwave-to-optical conversion devices are mainly based on single mechanisms such as optomechanical coupling, electro-optic effect, and magneto-optic effect. However, these mechanisms have many technical limitations: First, traditional optomechanical microwave-to-optical conversion relies on the coupling between photons and mechanical oscillators. Due to the fast decay rate of phonons and the weak coupling strength, the conversion efficiency is generally low, making it difficult to meet the fidelity requirements of quantum state transmission. Second, microwave-to-optical conversion schemes based on superconducting circuits require dilution refrigerators to provide an extremely low temperature environment (usually below 100 mK), which greatly increases the system complexity and operating cost, limiting the large-scale application and integration of devices. Third, existing magneto-optical and electro-optical conversion devices mostly rely on a single coupling channel and lack a mechanism for the coordinated control of magnetons, phonons, and photons, resulting in large energy loss, narrow bandwidth, and difficulty in flexibly adjusting the coupling strength during the conversion process. Fourth, some devices adopt complex multilayer heterostructure designs, relying on high-precision photolithography and epitaxial growth processes, resulting in high fabrication costs, poor repeatability, and difficulty in compatibility and integration with existing micro-nano semiconductor processes.

[0004] In recent years, the interdisciplinary development of magnetonics and optomechanics has provided a new technological path to overcome the aforementioned bottlenecks. Magnetons (quantized units of spin waves in magnetic materials) can serve as carriers of microwave signals, and they can generate efficient coupling with both phonons and photons: magneton-phonon coupling can achieve efficient energy transfer at room temperature through the strain interaction between magnetic materials and mechanical oscillators. For example, magnetoacoustic coupling systems based on magnetic materials such as yttrium iron garnet (YIG) have been proven to have low loss and high coupling strength at room temperature; while phonon-photon coupling can be achieved through the radiation pressure interaction between high-tension mechanical oscillators and optical modes, which can significantly improve the optoacoustic coupling efficiency and the quality factor of mechanical oscillators. Summary of the Invention

[0005] The inventors discovered that existing technologies have not yet achieved the synergistic coupling and efficient control of magnetons, phonons, and photons, and lack a microwave-to-optical conversion device structure that can integrate the advantages of all three: existing magnetoacoustic coupling devices only focus on the manipulation of microwave signals or the reading of mechanical oscillators, without involving linkage with photons; traditional optomechanical devices do not utilize the high degree of freedom of control and room temperature compatibility of magnetons; and the lack of efficient coupling in magneto-optical conversion devices makes it difficult to balance conversion efficiency and environmental adaptability. Therefore, developing a microwave-to-optical conversion device based on a magneton-phonon-photon synergistic coupling mechanism, possessing characteristics such as room temperature operation, high-efficiency conversion, controllable coupling strength, and easy integration, is key to solving the current bottlenecks in quantum interconnect technology and is of great significance for promoting the practical development of quantum information networks.

[0006] According to a first aspect of this application, a microwave optical conversion device is provided, characterized in that it comprises:

[0007] silicon substrate;

[0008] A semiconductor thin film is located on a first surface of a silicon substrate. The semiconductor thin film includes an attachment portion on the first surface of the silicon substrate and a semiconductor thin film oscillator formed by etching a second surface of the silicon substrate until the semiconductor thin film is formed. The surface of the semiconductor thin film has a microwave circuit.

[0009] The support includes a support light-transmitting hole and multiple support platforms, one of which is correspondingly disposed to the semiconductor thin-film oscillator, and the other support platforms are connected to the second surface of the silicon substrate. The support light-transmitting hole is correspondingly disposed to the semiconductor thin-film oscillator.

[0010] A magnetic device is located on a support platform corresponding to the semiconductor thin-film oscillator, at a predetermined distance from the semiconductor thin-film oscillator;

[0011] An optical component includes an incident lens and a reflector. The incident lens and the reflector are located on opposite sides of the semiconductor thin film and are correspondingly arranged with the semiconductor thin film oscillator. Incident light through the incident lens passes through the light-transmitting hole of the bracket and the semiconductor thin film and enters the reflector to form an optical resonant cavity.

[0012] When a microwave signal is input into the microwave circuit, the alternating electromagnetic field generated by the microwave circuit can act on the magnetic device to realize the conversion of the microwave signal into a magneton. The magnetic device and the semiconductor thin-film oscillator form a dissipative coupling channel for the coupling of magnetons and phonons to realize the energy transfer from magnetons to phonons. When the semiconductor thin-film oscillator resonates under the drive of phonons, it changes the effective cavity length and refractive index distribution of the optical resonant cavity, which enables the incident light to be modulated according to the information of the microwave signal to generate a first modulated optical signal.

[0013] According to a second aspect of this application, a method for performing microwave-optical conversion using the microwave-optical conversion device as described in the first aspect is provided, characterized in that it includes:

[0014] A microwave signal is input into a microwave circuit on the surface of the semiconductor thin film oscillator, so that the alternating electromagnetic field formed by the microwave circuit acts on the magnetic device, thereby transferring the energy of the microwave signal to the magnetic particle and realizing the conversion of microwave signal to magnetic particle.

[0015] By forming a dissipative coupling channel between the magnetic device and the semiconductor thin-film oscillator, the energy of the microwave signal is transferred to the semiconductor thin-film oscillator through a dissipative coupling mechanism, thereby realizing energy transfer from magnetons to phonons; and

[0016] By changing the effective cavity length and refractive index distribution of the resonant cavity through the semiconductor thin-film oscillator, the incident light is modulated according to the information of the microwave signal to generate a first modulated optical signal.

[0017] According to the microwave-optical conversion device and conversion method provided in this application, on the one hand, it completely eliminates the dependence on extremely low temperature environment, achieves stable operation at room temperature, and greatly reduces the complexity and overall cost of the system; on the other hand, the conversion efficiency is significantly improved compared with traditional microwave-optical conversion devices. Attached Figure Description

[0018] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings, without exceeding the scope of protection claimed by this application.

[0019] Figure 1 This is a front view of a microwave optical conversion device according to an embodiment of this application.

[0020] Figure 2 This is a perspective view of a microwave optical conversion device according to an embodiment of this application.

[0021] Figure 3 This is a microwave circuit diagram of the surface of a semiconductor thin film according to an embodiment of this application.

[0022] Figure 4 This is a flowchart illustrating the fabrication process of a microwave circuit on the surface of a semiconductor thin film according to an embodiment of this application.

[0023] Figure 5 This is a flowchart of a microwave-optical conversion method implemented by a microwave-optical conversion apparatus according to an embodiment of this application.

[0024] Figure 6 This is a flowchart of a microwave-optical conversion method implemented by a microwave-optical conversion apparatus according to another embodiment of this application.

[0025] Figure 7 This is a flowchart of a microwave-optical conversion method implemented by a microwave-optical conversion apparatus according to another embodiment of this application.

[0026] Figure 8 This is a flowchart of a microwave-optical conversion method implemented by a microwave-optical conversion apparatus according to another embodiment of this application. Detailed Implementation

[0027] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of this application. All other embodiments obtained by those skilled in the art based on the embodiments of this application without creative effort are within the scope of protection of this application.

[0028] This application provides a microwave-optical conversion device that utilizes a magneton-phonon-photon cooperative coupling mechanism to achieve efficient conversion between microwave signals and optical signals. This device is suitable for cutting-edge technology scenarios such as quantum communication, quantum interconnection, and precision measurement.

[0029] like Figure 1 and Figure 2 As shown, the microwave optical conversion device includes a semiconductor thin film 1, a silicon substrate 2, a support 3, a magnetic device 4, and optical devices. The semiconductor thin film 1 is located on a first surface of the silicon substrate 2. The semiconductor thin film 1 includes an attached portion on the first surface of the silicon substrate 2 and a suspended portion formed by etching a second surface of the silicon substrate 2 until the semiconductor thin film 1 is formed; this suspended portion is referred to as a semiconductor thin film oscillator. In one specific embodiment, the semiconductor thin film includes a silicon nitride thin film. The semiconductor thin film oscillator can be of any suitable size and shape; for example, the semiconductor thin film oscillator can be square, with a side length ranging from 100 nm to 1000 nm, such as a 500 nm × 500 nm square. A microwave circuit is present on the surface of the semiconductor thin film, and the structure of the microwave circuit is as follows... Figure 3 As shown. InFigure 3 In the illustrated embodiment, the semiconductor thin-film oscillator is provided with a ring structure of microwave circuit. The ring structure can be circular, rectangular or other shapes, and this application does not impose any restrictions on it.

[0030] In one embodiment, such as Figure 1 and Figure 2 As shown, the support 3 includes multiple support mesa 31 and support light-transmitting holes 32. One of the multiple support mesa 31 is correspondingly arranged with the semiconductor thin film oscillator. The other support mesa 31 are connected to the second surface of the silicon substrate 2. The support light-transmitting holes 32 are correspondingly arranged with the semiconductor thin film oscillator.

[0031] In one embodiment, such as Figure 1 and Figure 2 As shown, the magnetic device 4 is located on a support platform corresponding to the semiconductor thin-film oscillator, at a predetermined distance from the oscillator. In one specific embodiment, the magnetic device 4 may include yttrium iron garnet (YIG) microspheres with a diameter of 0.1 to 0.3 millimeters. The magnetic device 4 is correspondingly positioned to the ring structure of the microwave circuit, and the predetermined distance can range from 1 micrometer to 1 millimeter.

[0032] In one embodiment, the optical device may include an incident lens 51 and a reflector 52, which are located on opposite sides of the semiconductor thin film 1 and are correspondingly arranged with the semiconductor thin film oscillator. The incident light through the incident lens passes through the light-transmitting hole 32 of the bracket and the semiconductor thin film 1 and enters the reflector to form an optical resonant cavity, such as a Fabry-Perot optical cavity.

[0033] This application constructs a complete energy conversion link from microwave to magneton to phonon to photon based on a synergistic coupling mechanism. Through the integrated structure of a semiconductor thin-film microwave circuit with magnetic devices and a semiconductor thin-film oscillator (mechanical oscillator), it achieves efficient and controllable conversion of microwave signals to optical signals at room temperature. The semiconductor thin-film microwave circuit of this application serves as the microwave signal input unit. When an external microwave signal is input to the circuit, an alternating electromagnetic field is formed. This alternating electromagnetic field can precisely act on the magnetic device (e.g., yttrium iron garnet (YIG) microspheres). Under the excitation of the alternating electromagnetic field, the magnetic moments within the magnetic functional layer undergo periodic precession, thereby exciting spin waves. The quantized unit of the spin wave is the magneton, and the energy of the microwave signal is thus entirely transferred to the magneton, achieving efficient conversion from microwave signal to magneton. This process does not rely on extremely low temperatures; thanks to the room-temperature magnetic stability of the magnetic device (e.g., yttrium iron garnet (YIG) microspheres), stable excitation of the magneton can be achieved at room temperature, completely avoiding the dependence on dilution refrigerators in traditional superconducting circuit schemes.

[0034] In this application, the distance between the magnetic device and the semiconductor thin-film oscillator affects the coupling between microwaves and magnetons, forming a dissipative coupling channel and achieving efficient coupling between magnetons and phonons. When microwaves and magnetons interact, the energy carried by the microwave signal is transferred to the semiconductor thin-film oscillator through the dissipative coupling mechanism, driving the semiconductor thin-film oscillator to resonate. The quantized form of this mechanical vibration is the phonon. The energy of the magneton is completely transferred to the phonon through a non-radiative transition, completing the energy transfer from magneton to phonon. At the same time, the high elastic modulus of the semiconductor thin film (e.g., silicon nitride thin film) ensures the quality factor of the semiconductor thin-film oscillator, further improving the magneton-phonon coupling efficiency and solving the technical problem of high energy loss in traditional single coupling mechanisms. Unlike traditional magneto-optical conversion that ignores the role of phonons, in this application, phonons play a key role in energy transfer, and the high elastic modulus of the silicon nitride thin film ensures the quality factor of the mechanical oscillator, reducing the loss in the energy transfer process from magneton to phonon and achieving complete non-radiative energy transfer.

[0035] The semiconductor thin-film oscillator also serves as a medium for phonon-photon coupling. When the semiconductor thin-film oscillator resonates under phonon drive, it causes the cavity wall of the optical resonant cavity to produce periodic displacement, thereby changing the effective cavity length and refractive index distribution of the optical resonant cavity. At this time, the incident light (pump light field) entering the optical resonant cavity undergoes radiation pressure coupling with the vibrating cavity wall. The energy carried by the phonons is converted into photon energy through optical field modulation, so that the amplitude, frequency or phase of the incident light is modulated by the information of the microwave signal, forming a first modulated optical signal carrying the original microwave signal information. After being enhanced by the optical resonant cavity, the first modulated optical signal is stably emitted through the output port, completing the final conversion from phonons to optical signals and realizing the complete conversion from microwave signals to optical signals.

[0036] In this application, during the conversion of phonons to photons, a dual modulation effect of optical modes is simultaneously superimposed. The resonant vibration of the silicon nitride thin-film mechanical oscillator changes the frequency of the optical resonant cavity, achieving phase modulation and intensity modulation of the optical field within the cavity. Furthermore, the two modulations have a phase difference, a unique effect that suppresses redundant sidebands and optimizes the purity of the optical signal. Simultaneously, the high Q-factor of the optical resonant cavity (referencing the loaded Q-factor level of similar YIG microcavities (4.7 × 10⁵)) significantly reduces photon loss within the cavity. The target optical signal, formed after modulation of the incident light, is amplified by the resonant cavity and then precisely emitted through the light-passing aperture of the support, completing the efficient and low-distortion conversion of phonon energy to photon signal.

[0037] Accordingly, this application can also realize the conversion from optical signals to microwave signals. In one embodiment, the second modulated optical signal is input through the incident lens 51, and through the radiation pressure coupling of the optical resonant cavity, the second modulated optical signal is converted into phonons, which drive the semiconductor thin film oscillator to resonate. The dissipative coupling channel formed by the magnetic device 4 and the semiconductor thin film oscillator realizes the energy transfer from phonons to magnetons, thereby causing the microwave circuit to generate microwave signals.

[0038] In one embodiment, the microwave-optical conversion device of this application possesses multi-dimensional coupling strength control capabilities, which can achieve precise adjustment through two core methods. In one method, by changing the input microwave power of the semiconductor thin-film microwave circuit, the intensity of the alternating electromagnetic field can be controlled, thereby controlling the excitation density of magnets and indirectly controlling the coupling energy of magnets-phonons-photons. In another method, by applying an external tunable magnetic field to the magnetic device, the dispersion relation and propagation speed of the magnets can be changed, thereby adjusting the coupling coefficient between magnets and phonons and achieving dynamic adaptation of the coupling strength across the entire link. This control mechanism breaks through the limitation of fixed coupling strength in existing devices and meets the conversion requirements under different quantum interconnection scenarios.

[0039] Figure 4 This is a flowchart illustrating the fabrication process of a microwave circuit on the surface of a semiconductor thin film according to an embodiment of this application. Figure 4 As shown, the process includes the following steps.

[0040] (1) A double-polished silicon wafer can be used as the silicon substrate, and its thickness can be 500 μm.

[0041] (2) Semiconductor thin films can be grown using LPCVD (low-pressure chemical vapor deposition), wherein the film thickness can be 50nm-200nm; the growth parameters include: temperature can be 700-800 degrees Celsius, for example 750 degrees Celsius, and time can be 20-60min, for example 33min.

[0042] (3) Spin-coat photoresist onto the lower surface of the silicon substrate, and use laser to write the pattern. The size of the rectangular pattern on the back is designed according to the size of the thin film, and then developed with developer.

[0043] (4) Reactive ion etching (RIE) can be used to etch the back silicon nitride, wherein the RIE parameters include: gas ratio CHF3:O2 between 5 and 20, pressure of 1 to 3 Pa, and time of 200 to 250 s. For example, gas ratio CHF3:O2 = 50:5, pressure of 2 Pa, and time of 210 s.

[0044] (5) Silicon can be etched using KOH solution, with a KOH concentration of 40%, a temperature of 80°C, and a time of approximately 4 hours. After KOH etching is completed, the semiconductor film on the front side is suspended; the sample surface is cleaned with piranha solution (concentrated sulfuric acid: hydrogen peroxide = 3:1); after cleaning, it is cleaned with ethanol and then dried.

[0045] (6) A metal thin film of 20nm-200nm is grown on the surface. The metal can be Al, Nb, Ta and other metals.

[0046] (7) Spin-coat photoresist onto the front of the sample, write microwave circuit patterns directly with laser, and develop with developer.

[0047] (8) Use dry etching (e.g., RIE, ICP-RIE, etc.) or wet etching to etch the corresponding metals to obtain microwave circuits.

[0048] This application constructs a highly efficient and controllable microwave-optical conversion link at room temperature through a three-level synergistic coupling of magnetons, phonons, and photons. This not only avoids the defects of traditional single coupling mechanisms but also is compatible with existing micro-nano semiconductor processes, providing a stable and reliable signal conversion solution for scenarios such as quantum communication and quantum interconnection.

[0049] Based on the aforementioned microwave-optical conversion device, according to another aspect of this application, a method for performing microwave-optical conversion using a microwave-optical conversion device is provided. Figure 5 This is a flowchart illustrating a microwave-optical conversion method implemented using a microwave-optical conversion apparatus according to an embodiment of this application. Figure 5 As shown, the method includes the following steps:

[0050] Step S501: Input a microwave signal into the microwave circuit on the surface of the semiconductor thin film oscillator so that the alternating electric field formed by the microwave circuit acts on the magnetic device, so that the energy of the microwave signal is transferred to the magnetic particle, thereby realizing the conversion of microwave signal to magnetic particle;

[0051] Step S502: By forming a dissipative coupling channel between the magnetic device and the semiconductor thin film oscillator, the energy of the microwave signal is transferred to the semiconductor thin film oscillator through the dissipative coupling mechanism, so as to realize the energy transfer from the magneton to the phonon.

[0052] Step S503: The effective cavity length and refractive index distribution of the resonant cavity are changed by the semiconductor thin film oscillator so as to modulate the incident light according to the information of the microwave signal and generate a first modulated light signal.

[0053] Figure 6 This is a flowchart illustrating a microwave-optical conversion method implemented using a microwave-optical conversion apparatus according to another embodiment of this application. Figure 5 compared to, Figure 6Steps S601 to S603 of the method shown are Figure 5 Steps S501 to S503 are the same, except that... Figure 6 The method shown also includes:

[0054] Step S604: Input a second modulated light signal through the incident lens;

[0055] In step S605, the second modulated optical signal is converted into phonons via radiation pressure coupling of the optical resonant cavity to drive the semiconductor thin film oscillator to resonate.

[0056] Step S606: Through the dissipative coupling channel formed by the magnetic device and the semiconductor thin film oscillator, energy transfer from phonons to magnetons is realized, thereby causing the magnetons to cause the microwave circuit to generate microwave signals.

[0057] Figure 7 This is a flowchart illustrating a microwave-optical conversion method implemented using a microwave-optical conversion apparatus according to yet another embodiment of this application. Figure 5 compared to, Figure 7 Steps S701 to S703 of the method shown are Figure 5 Steps S501 to S503 are the same, except that... Figure 7 The method shown also includes:

[0058] Step S704: By changing the power of the microwave signal, the intensity of the alternating electromagnetic field is adjusted, thereby controlling the excitation density of the magnetons, so as to indirectly control the coupling energy of magnetons-phonons-photons.

[0059] Figure 8 This is a flowchart illustrating a microwave-optical conversion method implemented using a microwave-optical conversion apparatus according to another embodiment of this application. Figure 5 compared to, Figure 8 Steps S801 to S803 of the method shown are Figure 5 Steps S501 to S503 are the same, except that... Figure 8 The method shown also includes:

[0060] Step S804: By applying an external adjustable magnetic field to the magnetic device, the dispersion relation and propagation speed of the magnetic device are changed, thereby adjusting the coupling coefficient between the magneton and the phonon, and thus achieving dynamic adaptation of the coupling strength of the entire link.

[0061] According to the solution of this application, its technical effects include:

[0062] First, it completely eliminates the dependence on extremely low temperatures, achieving stable operation at room temperature and significantly reducing system complexity and overall cost. Existing microwave-optical conversion schemes based on superconducting circuits must rely on dilution refrigerators to maintain an extremely low temperature environment. This not only results in high purchase costs for the refrigeration equipment but also high energy consumption and maintenance difficulties, severely limiting the large-scale deployment and integrated application of the device. In contrast, this invention uses magnetic materials (such as yttrium iron garnet (YIG) microspheres with excellent room-temperature magnetic stability) as the core component for magnetic excitation, combined with a semiconductor thin-film microwave circuit to construct an alternating electromagnetic field excitation structure. The excitation process from microwave signal to magnetic particle can be stably completed at room temperature without any cryogenic auxiliary equipment. This breakthrough not only eliminates the high investment and operating costs of cryogenic refrigeration equipment but also lowers the barrier to adapting the device to different environments, enabling its flexible application in various scenarios such as conventional laboratories and quantum communication base stations where extreme low-temperature conditions are lacking. This lays a solid foundation for the widespread adoption and large-scale integration of the device. Meanwhile, in room temperature operating mode, the device structure is more stable, avoiding the special requirements for material performance in extremely low temperature environments, reducing structural losses and performance fluctuations that may occur at low temperatures, and further improving the long-term operational reliability of the device.

[0063] Secondly, the conversion efficiency of this application is significantly improved compared to traditional microwave-to-optical conversion devices. Traditional microwave-to-optical conversion devices mostly rely on single mechanisms such as optomechanical coupling and electro-optic effects, resulting in weak coupling strength, high energy loss, and low conversion efficiency. Furthermore, most can only achieve unidirectional signal transmission, making it difficult to meet the complex requirements of quantum information interconnection. In contrast, this application employs a highly efficient three-level magnon-phonon-photon cooperative coupling link. It achieves efficient energy transfer between magnons and phonons through dissipative coupling and completes the efficient conversion of phonons to photons through radiation pressure coupling. The high stress of the semiconductor thin film ensures the high quality factor of the mechanical oscillator, significantly reducing energy loss during the conversion process. The conversion efficiency far exceeds that of traditional microwave-to-optical conversion devices, while effectively ensuring the fidelity of quantum state transmission, meeting the core requirements of quantum information processing. This cooperative coupling link has good reversibility, enabling flexible bidirectional conversion between microwave and optical signals, adapting to the low-loss transmission requirements of optical signals in long-distance quantum communication and meeting the scenario of microwave signal manipulation of qubits in solid-state quantum computing, greatly expanding the application range of the device.

[0064] Furthermore, this application can achieve dynamic and precise control of coupling strength by adjusting the input microwave power and applying an external tunable magnetic field, which can adapt to the differentiated needs of different cutting-edge scenarios such as quantum communication and precision measurement. Moreover, the LPCVD growth and RIE etching used are mature micro-nano fabrication processes, which reduce the fabrication cost and process difficulty, improve production repeatability, and are seamlessly compatible with existing semiconductor processes, thus possessing the practical feasibility of large-scale mass production.

[0065] In the above embodiments, the descriptions of each embodiment have different focuses. For parts not described in detail in a certain embodiment, please refer to the relevant descriptions in other embodiments.

[0066] It should be noted that, for the sake of simplicity, the foregoing method embodiments are all described as a series of actions. However, those skilled in the art should understand that this application is not limited to the described order of actions, as some steps may be performed in other orders or simultaneously according to this application. Furthermore, those skilled in the art should also understand that the embodiments described in the specification are all optional embodiments, and the actions and modules involved are not necessarily essential to this application.

[0067] The embodiments of this application have been described in detail above. Specific examples have been used to illustrate the principles and implementation methods of this application. The descriptions of the embodiments above are only for the purpose of helping to understand the method and core ideas of this application. Furthermore, any changes or modifications made by those skilled in the art based on the ideas of this application, and on the specific implementation methods and application scope of this application, are all within the scope of protection of this application. Therefore, the content of this specification should not be construed as a limitation of this application.

Claims

1. A microwave optical conversion device, characterized in that, include: silicon substrate; A semiconductor thin film is located on a first surface of a silicon substrate. The semiconductor thin film includes an attached portion on the first surface of the silicon substrate and a suspended portion formed by etching a second surface of the silicon substrate until the semiconductor thin film is formed. The suspended portion is referred to as a semiconductor thin film oscillator. The surface of the semiconductor thin film has a microwave circuit. The support includes a support light-transmitting hole and multiple support platforms, one of which is correspondingly disposed to the semiconductor thin-film oscillator, and the other support platforms are connected to the second surface of the silicon substrate. The support light-transmitting hole is correspondingly disposed to the semiconductor thin-film oscillator. A magnetic device is located on a support platform corresponding to the semiconductor thin-film oscillator, at a predetermined distance from the semiconductor thin-film oscillator; An optical component includes an incident lens and a reflector. The incident lens and the reflector are located on opposite sides of the semiconductor thin film and are correspondingly arranged with the semiconductor thin film oscillator. Incident light through the incident lens passes through the light-transmitting hole of the bracket and the semiconductor thin film and enters the reflector to form an optical resonant cavity. When a microwave signal is input into the microwave circuit, the alternating electromagnetic field generated by the microwave circuit can act on the magnetic device to realize the conversion of microwave signal into magnetic particle. The magnetic device and the semiconductor thin film oscillator form a dissipative coupling channel for the coupling of magnetic particle and phonon to realize the energy transfer from magnetic particle to phonon. When the semiconductor thin-film oscillator resonates under phonon drive, it changes the effective cavity length and refractive index distribution of the optical resonant cavity, enabling the incident light to be modulated according to the information of the microwave signal to generate a first modulated optical signal.

2. The microwave optical conversion device as described in claim 1, characterized in that, The second modulated optical signal is input through the incident lens and converted into phonons through the radiation-pressure coupling of the optical resonant cavity, thereby driving the semiconductor thin-film oscillator to resonate. The dissipative coupling channel formed by the magnetic device and the semiconductor thin-film oscillator enables energy transfer from phonons to magnetons, thereby causing the microwave circuit to generate microwave signals.

3. The microwave optical conversion device as described in claim 1 or 2, characterized in that, The magnetic device includes yttrium iron garnet (YIG) microspheres with a diameter of 0.1 to 0.3 mm.

4. The microwave optical conversion device as described in claim 1 or 2, characterized in that, The semiconductor thin-film oscillator is provided with a ring structure of microwave circuit, and the magnetic device is arranged correspondingly to the ring structure. The preset distance is in the range of 1 micrometer to 1 millimeter.

5. The microwave optical conversion device as described in claim 1 or 2, characterized in that, The semiconductor thin film includes a silicon nitride thin film, and the semiconductor thin film oscillator is square with a side length ranging from 100 nm to 1000 nm.

6. A method for performing microwave-optical conversion using the microwave-optical conversion device as described in any one of claims 1 to 5, characterized in that, include: A microwave signal is input into a microwave circuit on the surface of the semiconductor thin film oscillator, so that the alternating electromagnetic field formed by the microwave circuit acts on the magnetic device, thereby transferring the energy of the microwave signal to the magnetic particle and realizing the conversion of microwave signal to magnetic particle. By forming a dissipative coupling channel between the magnetic device and the semiconductor thin-film oscillator, the energy of the microwave signal is transferred to the semiconductor thin-film oscillator through the dissipative coupling mechanism, thereby realizing the energy transfer from magneton to phonon. as well as By changing the effective cavity length and refractive index distribution of the resonant cavity through the semiconductor thin-film oscillator, the incident light is modulated according to the information of the microwave signal to generate a first modulated optical signal.

7. The method as described in claim 6, characterized in that, Also includes: A second modulated optical signal is input through the incident lens; The second modulated optical signal is converted into phonons through radiation-pressure coupling of the optical resonant cavity, thereby driving the semiconductor thin-film oscillator to resonate; as well as Through the dissipative coupling channel formed by the magnetic device and the semiconductor thin-film oscillator, energy transfer from phonons to magnetons is realized, thereby causing the magnetons to cause the microwave circuit to generate microwave signals.

8. The method as described in claim 6 or 7, characterized in that, Also includes: By changing the power of the microwave signal, the intensity of the alternating electromagnetic field is modulated, thereby controlling the excitation density of the magnetons and indirectly controlling the coupling energy of magnetons-phonons-photons.

9. The method as described in claim 6 or 7, characterized in that, Also includes: By applying an external adjustable magnetic field to the magnetic device, the dispersion relation and propagation speed of the magnetic device are changed, thereby adjusting the coupling coefficient between the magneton and the phonon, and thus achieving dynamic adaptation of the coupling strength across the entire link.

10. The method as described in claim 6 or 7, characterized in that, The magnetic device includes yttrium iron garnet (YIG) microspheres with a diameter of 0.1 to 0.3 mm; the semiconductor thin-film oscillator has a ring structure of the microwave circuit, and the magnetic device is correspondingly arranged with the ring structure, with the preset distance ranging from 1 micrometer to 1 millimeter; the semiconductor thin film includes a silicon nitride thin film, and the semiconductor thin-film oscillator is square with a side length ranging from 100 nm to 1000 nm.

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