High-efficiency power amplifier with extended harmonic modulation bandwidth and modulation method thereof

Abstract

This invention discloses a high-efficiency power amplifier with extended harmonic modulation bandwidth and its modulation method. A harmonic control circuit unit is added to the input terminal of the final stage die of the power amplifier. The extended harmonic control unit includes a second harmonic modulation circuit and a first parasitic element of the power amplifier back hole. The second parasitic element of the source back hole of the final stage transistor participates in modulation. Considering the parasitic effect of the power amplifier and the back hole at the source of the die, the harmonic modulation bandwidth is further widened by adjusting the harmonic control circuit unit, which effectively improves the working efficiency of the amplifier.

Description

Technical Field

[0001] This invention relates to the field of monolithic microwave integrated circuit technology, and in particular to a high-efficiency power amplifier with extended harmonic modulation bandwidth and its modulation method. Background Technology

[0002] Wideband power monolithic microwave integrated circuit devices, with their advantages of small size, high power, good consistency, and high reliability, are widely used in modern radar, communication satellites, ground base stations, aerospace, and instrumentation systems. With the rapid development of third-generation semiconductor technology, semiconductor devices, due to their high power density, are widely used in high-power amplifier chip design. However, as output power increases, a large amount of heat inevitably accumulates, leading to increased junction temperature of the amplifier die and decreased reliability. Therefore, how to design high-efficiency semiconductor power amplifiers has become a challenging problem.

[0003] Amplifiers with improved efficiency mainly include Class E amplifiers and inverse Class E amplifiers based on switching modes, as well as Class F amplifiers, inverse Class F amplifiers, finite harmonic control amplifiers, and harmonic injection amplifiers based on harmonic control. In traditional circuits, inverse Class E or Class F power amplifiers are often implemented by designing harmonic matching circuits and fundamental frequency matching circuits. These matching circuits are located in the matching circuit at the output of the power amplifier, which increases design complexity and circuit losses.

[0004] In existing technologies, finite harmonic control methods are commonly used to improve efficiency. One type of harmonic control circuit unit suitable for miniaturized power devices is constructed by introducing an LC series branch at the die gate and connecting it in parallel to ground. This structure uses capacitors and inductors to create resonance at the second or higher harmonic frequencies in the operating frequency band, thereby reducing power consumption at harmonic frequencies during die operation and improving the efficiency of the power amplifier. However, this circuit has a significant narrowband characteristic, resulting in poor performance for high-frequency broadband applications. Summary of the Invention

[0005] Purpose of the invention: The purpose of this invention is to provide a high-efficiency power amplifier and its modulation method that expands the harmonic modulation bandwidth. By using a novel harmonic control unit circuit, the harmonic modulation bandwidth of the power amplifier is broadened, and the operating efficiency of the power amplifier is improved.

[0006] Technical solution: The high-efficiency power amplifier with extended harmonic modulation bandwidth described in this invention includes a multi-stage amplifier circuit and an extended harmonic control unit;

[0007] The extended harmonic control unit is connected to the input terminal of the final stage transistor of the multi-stage amplifier circuit. The extended harmonic control unit includes a second harmonic modulation circuit and a first parasitic element of the power amplifier back hole.

[0008] The extended harmonic control unit and the second parasitic element of the source back hole of the final stage transistor jointly perform harmonic modulation.

[0009] Furthermore, the transistors in the multi-stage amplifier circuit are one of the following: junction field-effect transistors, metal-oxide-semiconductor field-effect transistors, heterojunction field-effect transistors, bipolar junction transistors, or heterojunction bipolar transistors.

[0010] Furthermore, the second harmonic modulation circuit includes a capacitor.

[0011] Furthermore, the power amplifier is an ultra-wideband monolithic integrated power amplifier, and its wafer material includes GaAs or GaN.

[0012] Furthermore, the multi-stage amplifier circuit adopts a three-stage amplification reactance topology.

[0013] The present invention discloses a modulation method for a high-efficiency power amplifier with extended harmonic modulation bandwidth, wherein the power amplifier includes a multi-stage amplifier circuit and an extended harmonic control unit;

[0014] The extended harmonic control unit is connected to the input terminal of the final stage transistor of the multi-stage amplifier circuit. The extended harmonic control unit includes a second harmonic modulation circuit and a first parasitic element of the power amplifier back hole.

[0015] The extended harmonic control unit, together with the second parasitic element of the source back hole of the final stage transistor, modulates the second harmonic of the source impedance of the final stage transistor to the short-circuit point on the Smith chart, thereby extending the harmonic modulation bandwidth.

[0016] Furthermore, the transistor in the multi-stage amplifier circuit is one of a junction field-effect transistor, a metal-oxide-semiconductor field-effect transistor, a heterojunction field-effect transistor, a bipolar junction transistor, or a heterojunction bipolar transistor;

[0017] The second harmonic modulation circuit includes a capacitor;

[0018] The power amplifier is an ultra-wideband monolithic integrated power amplifier, and its wafer material includes GaAs or GaN.

[0019] The multi-stage amplifier circuit adopts a three-stage amplification reactance topology.

[0020] The electronic device of the present invention includes a memory, a processor, and a computer program stored in the memory and executable on the processor. When the computer program is loaded onto the processor, it implements the modulation method of the high-efficiency power amplifier with extended harmonic modulation bandwidth.

[0021] The computer-readable storage medium of the present invention stores a computer program, which, when executed by a processor, implements the modulation method of the high-efficiency power amplifier with extended harmonic modulation bandwidth.

[0022] The computer program product of the present invention includes a computer program that, when executed by a processor, implements a modulation method for a high-efficiency power amplifier with extended harmonic modulation bandwidth.

[0023] Beneficial effects: Compared with the prior art, the advantages of the present invention are: The harmonic control circuit unit added to the input terminal of the final stage transistor of the power amplifier effectively improves the working efficiency of the amplifier, and has the characteristics of simple structure and easy design. The harmonic control circuit unit can be applied to broadband, high-power, and high-efficiency microwave and millimeter-wave power device circuits, with a relative bandwidth of over 60% and an in-band efficiency that is 5 percentage points higher than that of traditional harmonic modulation high-efficiency power amplifiers. Attached Figure Description

[0024] Figure 1 This is a schematic diagram of the topology of a high-efficiency power amplifier with extended harmonic modulation bandwidth according to an embodiment of the present invention.

[0025] Figure 2 This is a schematic diagram of a high-efficiency power amplifier circuit with extended harmonic modulation bandwidth according to an embodiment of the present invention.

[0026] Figure 3 This is a Smith chart showing the second harmonic modulation of the source impedance of the final stage transistor in an embodiment of the present invention.

[0027] Figure 4 This invention provides a comparison of the modulation bandwidth of the harmonic control circuit unit and the LC series harmonic control unit in an embodiment of the invention.

[0028] Figure 5 The figure shows the simulation results of the specific operating efficiency of the broadband internal power amplifier in this embodiment of the invention.

[0029] Figure 6 The graph shows the measured output power curve of the power amplifier according to an embodiment of the present invention.

[0030] Figure 7 This is a graph showing the measured results of the additional efficiency curve of the power amplifier according to an embodiment of the present invention. Detailed Implementation

[0031] The technical solution of the present invention will be further described below with reference to the accompanying drawings.

[0032] like Figure 1 As shown, the high-efficiency power amplifier with extended harmonic modulation bandwidth includes a multi-stage amplifier circuit 101 and an extended harmonic control unit 102.

[0033] The extended harmonic control unit 102 is connected to the input terminal of the final stage transistor of the multi-stage amplifier circuit 101. The extended harmonic control unit 102 includes a second harmonic modulation circuit 121 and a first parasitic element 141 of the power amplifier back hole.

[0034] The extended harmonic control unit 102 and the second parasitic element 142 of the source back hole of the final stage transistor jointly perform harmonic modulation.

[0035] Specifically, in this embodiment. Figure 1 The multi-stage amplifier circuit 101 shown adopts a three-stage amplification reactance topology, including three stages of transistors. Each stage of transistors also includes an input matching circuit, an inter-stage matching circuit, and an output matching circuit between the RF input (RF IN) signal and the RF output (RF OUT) signal. In practice, the multi-stage amplifier circuit can be any power amplifier circuit that realizes the harmonic broadening function.

[0036] like Figure 2 As shown, the final stage transistor of the multi-stage amplifier circuit 101 in this embodiment has two sets. Taking one set as an example, the second harmonic modulation circuit 121 includes a capacitor and a first parasitic element 141 of the power amplifier back hole.

[0037] Taking into account operating frequency, bandwidth, power, and efficiency, and using appropriate semiconductor technology for manufacturing, the wafer of the power amplifier of this invention uses GaAs or GaN material as the substrate, but is not limited to these.

[0038] Specifically, the extended harmonic control unit 102 and the second parasitic element 142 of the source back hole of the final stage transistor work together. Considering the parasitic effect of the harmonic control circuit and the back hole at the source of the die, by adjusting the capacitance value of the second harmonic modulation circuit 121, the second harmonic of the source impedance of the final stage transistor can be modulated to the short-circuit point on the Smith chart, thereby expanding the harmonic modulation bandwidth and improving the output efficiency of the power amplifier. Figure 3 The figure shown is a Smith chart of the modulation of the second harmonic of the source impedance of the final stage transistor.

[0039] The power amplifier and its modulation method described in this invention will be verified through specific experiments below.

[0040] The power amplifier used in this experiment is an ultra-wideband GaN power amplifier. The circuit structure adopts a three-stage amplification reactive topology. The extended harmonic control unit and the second parasitic element of the source back hole of the final stage transistor work together to perform harmonic modulation. Figure 4 The figure shows a comparison of the bandwidth of modulation using the extended harmonic control unit described in this invention and the existing modulation using an LC series harmonic control unit. The bandwidth is significantly broadened. In the figure, the horizontal axis Frequency represents frequency, fo S21 represents the resonant frequency of the harmonic control unit and the transmission characteristics.

[0041] Figure 5 The simulation results of the power amplifier's efficiency over the broadband range in this experiment are presented, showing an efficiency improvement of more than 4 percentage points compared to the version without harmonic control stubs. Specifically, f... L This refers to the starting frequency band of the power amplifier, f H The highest operating frequency of the power amplifier is indicated by PAE, which stands for power amplifier efficiency.

[0042] Figure 6 This demonstrates the output power (P) of the power amplifier used in this experiment. out The measured results of the curve, Figure 7 The measured results of the power amplifier additional efficiency (PAE) curve in this experiment are presented.

[0043] As can be seen from the figure, the ultra-wideband GaN power amplifier has an output power of more than 28W and an efficiency of more than 40% in the operating frequency band with a relative bandwidth of more than 60%. The in-band efficiency can be improved by 5 percentage points compared with the traditional harmonic modulation high-efficiency power amplifier.

[0044] Traditional LC series harmonic control circuits have a narrow bandwidth, limiting their effective frequency band for power amplifiers. This invention, by modifying the second harmonic control circuit unit structure and incorporating parasitic back-hole circuit elements, effectively broadens the harmonic control circuit bandwidth, thereby improving the efficiency of the power transistor over a wide bandwidth. The simulation and experimental results demonstrate that the introduction of the broadband harmonic control unit in this invention effectively extends the harmonic modulation bandwidth of the power amplifier, resulting in a significant improvement in power amplifier efficiency over a wide bandwidth.

[0045] The present invention discloses a modulation method for a high-efficiency power amplifier with extended harmonic modulation bandwidth, wherein the power amplifier includes a multi-stage amplifier circuit and an extended harmonic control unit;

[0046] The extended harmonic control unit is connected to the input terminal of the final stage transistor of the multi-stage amplifier circuit. The extended harmonic control unit includes a second harmonic modulation circuit and a first parasitic element of the power amplifier back hole.

[0047] The extended harmonic control unit, together with the second parasitic element of the source back hole of the final stage transistor, modulates the second harmonic of the source impedance of the final stage transistor to the short-circuit point on the Smith chart, thereby extending the harmonic modulation bandwidth.

[0048] The electronic device of the present invention includes a memory, a processor, and a computer program stored in the memory and executable on the processor. When the computer program is loaded onto the processor, it implements the modulation method of the high-efficiency power amplifier with extended harmonic modulation bandwidth.

[0049] The computer-readable storage medium of the present invention stores a computer program, which, when executed by a processor, implements the modulation method of the high-efficiency power amplifier with extended harmonic modulation bandwidth.

[0050] The computer program product of the present invention includes a computer program that, when executed by a processor, implements a modulation method for a high-efficiency power amplifier with extended harmonic modulation bandwidth.

[0051] The computer-readable storage medium may include RAM, ROM, EEPROM, CD-ROM or other optical disc storage devices, magnetic disk storage devices or other magnetic storage devices, flash memory, or any other media that can be used to store program code in the form of instructions or data structures and is accessible by a computer.

[0052] The processor is used to execute a computer program stored in memory to implement the various steps in the methods described in the above embodiments.

Claims

1. A high-efficiency power amplifier with extended harmonic modulation bandwidth, characterized in that, It includes a multi-stage amplifier circuit (101) and an extended harmonic control unit (102). The extended harmonic control unit (102) is connected to the input terminal of the final stage transistor of the multi-stage amplifier circuit (101). The extended harmonic control unit (102) includes a second harmonic modulation circuit (121) and a first parasitic element (141) of the power amplifier back hole. The extended harmonic control unit (102) and the second parasitic element (142) of the source back hole of the final stage transistor jointly perform harmonic modulation to modulate the second harmonic of the source impedance of the final stage transistor to the short-circuit point of the Smith chart.

2. The high-efficiency power amplifier with extended harmonic modulation bandwidth according to claim 1, characterized in that, The transistor in the multi-stage amplifier circuit (101) is one of a junction field-effect transistor, a metal-oxide-semiconductor field-effect transistor, a heterojunction field-effect transistor, a bipolar junction transistor, or a heterojunction bipolar transistor.

3. The high-efficiency power amplifier with extended harmonic modulation bandwidth according to claim 1, characterized in that, The second harmonic modulation circuit (121) includes a capacitor.

4. The high-efficiency power amplifier with extended harmonic modulation bandwidth according to claim 1, characterized in that, The power amplifier is an ultra-wideband monolithic integrated power amplifier, and its wafer material includes GaAs or GaN.

5. The high-efficiency power amplifier with extended harmonic modulation bandwidth according to claim 1, characterized in that, The multi-stage amplifier circuit (101) adopts a three-stage amplification reactance topology.

6. A modulation method for a high-efficiency power amplifier with extended harmonic modulation bandwidth, characterized in that, The power amplifier includes a multi-stage amplifier circuit (101) and an extended harmonic control unit (102). The extended harmonic control unit (102) is connected to the input terminal of the final stage transistor of the multi-stage amplifier circuit (101). The extended harmonic control unit (102) includes a second harmonic modulation circuit (121) and a first parasitic element (141) of the power amplifier back hole. The extended harmonic control unit (102) works together with the second parasitic element (142) of the source back hole of the final stage transistor to modulate the second harmonic of the source impedance of the final stage transistor to the short-circuit point of the Smith chart in order to extend the harmonic modulation bandwidth.

7. The modulation method for a high-efficiency power amplifier with extended harmonic modulation bandwidth according to claim 6, characterized in that, The transistor in the multi-stage amplifier circuit (101) is one of a junction field-effect transistor, a metal-oxide-semiconductor field-effect transistor, a heterojunction field-effect transistor, a bipolar junction transistor, or a heterojunction bipolar transistor. The second harmonic modulation circuit (121) includes a capacitor; The power amplifier is an ultra-wideband monolithic integrated power amplifier, and its wafer material includes GaAs or GaN. The multi-stage amplifier circuit (101) adopts a three-stage amplification reactance topology.

8. An electronic device comprising a memory, a processor, and a computer program stored in the memory and executable on the processor, characterized in that, When the computer program is loaded into the processor, it implements the modulation method of the high-efficiency power amplifier with extended harmonic modulation bandwidth according to any one of claims 6-7.

9. A computer-readable storage medium storing a computer program, characterized in that, When the computer program is executed by the processor, it implements the modulation method of the high-efficiency power amplifier with extended harmonic modulation bandwidth according to any one of claims 6-7.

10. A computer program product, comprising a computer program, characterized in that, When the computer program is executed by the processor, it implements the modulation method of the high-efficiency power amplifier with extended harmonic modulation bandwidth according to any one of claims 6-7.

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