Heating disc and semiconductor equipment

Abstract

The invention relates to the technical field of semiconductor equipment, in particular to a heating disc and semiconductor equipment. In order to achieve the purpose, the invention provides the heating plate which comprises a plate body and a plate handle, a plurality of circles of concentric adsorption grooves and a plurality of radial adsorption grooves are formed in the disc body, and the multiple circles of concentric adsorption grooves are communicated through the radial adsorption grooves; a main air exhaust pipeline is arranged in the plate handle, and the main air exhaust pipeline is communicated with the radial adsorption groove; wherein the diameter of the outermost concentric adsorption groove is configured to enable the vacuum adsorption force generated by the heating disc to be greater than or equal to the minimum adsorption force required for flattening the wafer in the preset warping state. According to the method, the diameter of the outermost concentric adsorption groove is determined based on the thin plate bending theory and the vacuum pressure difference principle, stable adsorption and rapid flattening of the high-warpage wafer are achieved, the film deposition uniformity is remarkably improved, the process defect rate is reduced, and the wafer production yield is improved.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor equipment, more particularly, to a heating disc and semiconductor equipment. BACKGROUND

[0002] The vacuum adsorption heating disc is a core process component in semiconductor thin film deposition equipment such as chemical vapor deposition (CVD), which realizes the functions of adsorption fixation and precise temperature control of the wafer through the principle of vacuum adsorption. The strength and stability of the wafer adsorption force of the vacuum adsorption heating disc directly affect the uniformity of the thin film deposition on the wafer surface, and also have a key impact on the particle performance in the deposition process. Therefore, the vacuum adsorption performance of the vacuum adsorption heating disc has become one of the core factors determining the overall process level and application success or failure of the thin film deposition equipment.

[0003] However, the traditional vacuum adsorption heating disc faces severe challenges when facing high-wafer warping (usually in a "bowl" structure). Due to the warping of the wafer itself, the actual contact area between the wafer and the surface of the heating disc is significantly reduced, resulting in a significant attenuation of the adsorption force. This problem is particularly prominent in the edge region of the wafer. This poor contact not only causes a large temperature difference between the edge and the center of the wafer, which destroys the uniformity of the thin film deposition, but in severe cases, it also causes abnormal thin film stress and even peeling, resulting in a sharp decline in the yield of wafer products.

[0004] Therefore, in view of the problem of insufficient adsorption force for high-wafer warping, there is an urgent need for a new heating disc structure design that can effectively improve the vacuum adsorption force of the high-wafer warping and ensure that the wafer is stably and evenly adsorbed, thereby ensuring a high-quality thin film deposition process. SUMMARY

[0005] The purpose of the present application is to provide a heating disc and semiconductor equipment, which solves the problem of the prior art that the vacuum adsorption heating disc is difficult to stably adsorb high-wafer warping and is prone to process defects.

[0006] In order to achieve the above-mentioned purpose, the present application provides a heating disc, comprising a disc body and a disc handle;

[0007] A plurality of concentric adsorption grooves and a plurality of radial adsorption grooves are arranged on the disc body, and the plurality of concentric adsorption grooves are communicated through the plurality of radial adsorption grooves;

[0008] A main gas extraction pipeline is arranged in the disc handle, and the main gas extraction pipeline is communicated with the radial adsorption grooves;

[0009] The diameter of the outermost concentric adsorption groove is determined based on the thin plate bending theory and the vacuum pressure difference principle, the thin plate bending theory is used to calculate the minimum adsorption force required to flatten the wafer, and the vacuum pressure difference is the pressure difference between the upper and lower surfaces of the wafer.

[0010] The diameter of the outermost circle of the concentric adsorption grooves is configured such that the vacuum adsorption force generated by the heating disc is greater than or equal to the minimum adsorption force required to flatten the wafer in the predetermined warping state.

[0011] In some embodiments, the minimum adsorption force is related to the warping amount, elastic modulus, thickness, and radius of the wafer:

[0012] The minimum adsorption force increases with the increase of the warping amount, elastic modulus, and thickness of the wafer, and decreases with the increase of the radius of the wafer, and the diameter of the outermost circle of the concentric adsorption grooves is set according to the size of the minimum adsorption force to meet the wafer flattening requirement.

[0013] In some embodiments, the ratio of the sum of the flow conductance of the multiple circle concentric adsorption grooves and the multiple radial adsorption grooves to the flow conductance of the main pumping line is not less than 10.

[0014] In some embodiments, the number of concentric adsorption grooves is at least 3 circles, and the number of radial adsorption grooves is at least 6.

[0015] In some embodiments, the multiple circle concentric adsorption grooves are arranged in concentric distribution with the center of the disc body as the center;

[0016] The multiple radial adsorption grooves are all opened along the diameter direction of the disc body;

[0017] The multiple circle concentric adsorption grooves are interconnected by radial adsorption grooves.

[0018] In some embodiments, the multiple circle concentric adsorption grooves are uniformly distributed with the center of the disc body as the center, and the radius difference between adjacent two circle concentric adsorption grooves is equal; and / or

[0019] The multiple radial adsorption grooves are uniformly distributed with the center of the disc body as the center, and the central angle between adjacent two radial adsorption grooves is equal.

[0020] In some embodiments, the multiple circle concentric adsorption grooves and / or the multiple radial adsorption grooves are non-uniformly distributed on the adsorption surface of the disc body.

[0021] In some embodiments, the radial adsorption grooves are provided with a pumping hole:

[0022] One end of the pumping hole is in communication with the radial adsorption groove, and the other end is in communication with the main pumping line, for conveying the gas in the concentric adsorption groove and the radial adsorption groove to the main pumping line.

[0023] In some embodiments, the adsorbing surface of the disc body for carrying the wafer is a concave arc surface, and the concentric adsorbing grooves and the radial adsorbing grooves are arranged on the concave arc surface.

[0024] To achieve the above object, the application provides a semiconductor device comprising the heating disc.

[0025] The heating disc and the semiconductor device provided by the application determine the diameter of the outermost concentric adsorbing groove based on the thin plate bending theory and the vacuum pressure difference principle, and combine the flow conductance ratio of the adsorbing groove and the main air exhaust pipeline to realize stable adsorption and rapid flattening of the high warping wafer, thereby significantly improving the thin film deposition uniformity, reducing the process defect rate and improving the wafer production yield. BRIEF DESCRIPTION OF DRAWINGS

[0026] The above and other features, properties, and advantages of the application will become more apparent by referring to the following description in conjunction with the accompanying drawings, in which like reference numerals refer to like structures throughout the drawings and in which:

[0027] Figure 1 A structure diagram of the adsorbing groove of the heating disc according to an embodiment of the application is disclosed;

[0028] Figure 2 A sectional view of the heating disc according to an embodiment of the application is disclosed;

[0029] Figure 3 A performance comparison diagram of various versions of the heating disc according to an embodiment of the application is disclosed;

[0030] Figure 4 A diagram of the relationship between the average vacuum gauge pressure value and the wafer warping amount according to an embodiment of the application is disclosed;

[0031] Figure 5 A diagram of the relationship between the average low-frequency impedance value and the wafer warping amount according to an embodiment of the application is disclosed.

[0032] The meanings of the reference numerals in the drawings are as follows:

[0033] 10 disc body;

[0034] 101 concentric adsorbing groove;

[0035] 102 radial adsorbing groove;

[0036] 103 air exhaust hole;

[0037] 20 disc handle;

[0038] 201 main air exhaust pipeline. DETAILED DESCRIPTION

[0039] In order to make the objects, technical solutions and advantages of the present application clearer, the present application will be further described in detail below with reference to the drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present application and not to limit the present application.

[0040] Figure 1 A top view of a heating disc according to an embodiment of the present application is disclosed, as shown in the figure, the present application proposes a heating disc comprising a disc body 10 and a disc handle 20. Figure 1

[0041] The upper surface of the disc body 10 is an adsorption surface for carrying a wafer, and a plurality of concentric adsorption grooves 101 and a plurality of radial adsorption grooves 102 are machined on the adsorption surface:

[0042] The plurality of concentric adsorption grooves 101 are arranged in concentric distribution with the center of the disc body 10 as the center, the plurality of radial adsorption grooves 102 are opened along the diameter direction of the disc body 10, and the concentric adsorption grooves 101 are communicated through the radial adsorption grooves 102, so as to finally realize the mutual communication of the concentric adsorption grooves 101.

[0043] The disc handle 20 is internally provided with a main air extraction pipeline 201, one end of the main air extraction pipeline 201 extends to the inside of the disc body 10 and is communicated with the air extraction hole 103 arranged on the radial adsorption groove 102, and the other end extends out of the disc handle 20 and is used for being connected with an external air extraction device (such as a vacuum pump), so as to finally form a complete air extraction channel in which the concentric adsorption grooves 101, the radial adsorption grooves 102, the air extraction hole 103 and the main air extraction pipeline 201 are sequentially communicated with the external air extraction device, thereby providing a basic structure for vacuum adsorption.

[0044] In the embodiment, the diameter of the outermost concentric adsorption groove 101 is a key design for effectively flattening the high-warp wafer, the diameter d refers to the diameter corresponding to the circle from the outside of the groove to the center of the heating disc, and the diameter value is determined based on the thin plate bending theory and the vacuum pressure difference principle, and the size is accurately configured as: the vacuum adsorption force generated by the heating disc is greater than or equal to the minimum adsorption force required to flatten the wafer in a predetermined warp state.

[0045] Through this adaptive design, it can be ensured that the edge area of the high-warp wafer can also obtain sufficient adsorption force, and the problem of edge separation from the heating disc can be avoided.

[0046] More specifically, the thin plate bending theory is used to accurately calculate the minimum adsorption force required to flatten the wafer in a predetermined warp state, and the minimum adsorption force is definitely related to the warp amount, elastic modulus, thickness and radius of the wafer.

[0047] According to the thin plate bending theory, the minimum adsorption force F required to flatten the wafer in a predetermined warp state (i.e., the predetermined warp amount is δ) is: min ​The corresponding expression is:

[0048] ;

[0049] wherein E is the elastic modulus of the wafer, r is the wafer radius, t is the wafer thickness, and δ is the warping amount.

[0050] In some embodiments, the elastic modulus of the silicon wafer is approximately between 130 and 190 GPa, and in engineering applications, 150 GPa is usually taken as its approximate value.

[0051] It can be seen that the minimum adsorption force F min increases with the increase of the wafer warping amount δ, the elastic modulus E and the thickness t, and decreases with the increase of the wafer radius r.

[0052] The pressure difference in the vacuum pressure difference principle specifically refers to the pressure difference between the upper and lower surfaces of the wafer. After the heating disc is pumped through the main pumping line, a negative pressure will be formed in the adsorption groove, and then a pressure difference will be formed between the upper and lower surfaces of the wafer. The pressure difference is finally converted into the action force of adsorbing the wafer, that is, the vacuum adsorption force F chuck The corresponding expression is:

[0053] ;

[0054] wherein ΔP is the pressure difference between the upper and lower surfaces of the wafer, and A is the effective adsorption area.

[0055] When the circular area A = πd² / 4 corresponding to the diameter d of the outermost concentric adsorption groove 101 is taken as the effective adsorption area, in order to ensure that the wafer can be adsorbed flat, the diameter d needs to be configured to meet F chuck ≥ F min , that is, .

[0056] The diameter d is determined by the above principle, and the minimum adsorption force is set according to the size to meet the requirement of wafer flattening, so as to ensure the adsorption capacity of the heating disc on the high warping wafer from the design source.

[0057] In order to ensure that the above pressure difference ΔP can be quickly established and maintained, in the embodiment, the flow conductance of the concentric adsorption groove and the radial adsorption groove is optimized and designed.

[0058] Specifically, the ratio of the sum of the flow conductance of all concentric adsorption grooves 101 and radial adsorption grooves 102 to the flow conductance of the main pumping line 201 is designed to be not less than 10.

[0059] To achieve this high flow conductance ratio, the cross-sectional area of the concentric adsorption grooves 101 and the radial adsorption grooves 102 is maximized. The cross-sectional area of each adsorption groove is as large as possible, so that the concentric adsorption grooves 101 and the radial adsorption grooves 102 can quickly collect and transport the gas from all directions to the main pumping line 201, thereby ensuring that a high vacuum environment can be quickly formed under the wafer during the pumping process, and a strong adsorption force can be obtained.

[0060] The specific arrangement of the concentric adsorption grooves 101 and the radial adsorption grooves 102 will be described below.

[0061] In a preferred embodiment, the number of concentric adsorption grooves 101 is at least 3, and the number of radial adsorption grooves 102 is at least 6. This is a preferred scheme that has been tested and verified to provide excellent adsorption effect.

[0062] In a preferred embodiment, the multiple concentric adsorption grooves 101 are uniformly distributed around the center of the disc body 10, that is, the radius difference between adjacent two concentric adsorption grooves 101 is equal. At the same time, the multiple radial adsorption grooves 102 are also uniformly distributed around the center of the disc body 10, that is, the central angle between adjacent two radial adsorption grooves 102 is equal. This uniform distribution helps to form a stable and consistent adsorption force field on the entire disc surface.

[0063] In other embodiments, the multiple concentric adsorption grooves 101 and / or the multiple radial adsorption grooves 102 can also be non-uniformly distributed. For example, to enhance the adsorption effect on the edge of the wafer, the concentric adsorption grooves 101 can be arranged more densely in the edge area of the disc body 10; or to adapt to specific process requirements, more dense radial adsorption grooves 102 can be arranged in a certain sector. The central angle between adjacent two radial adsorption grooves 102 in different areas can be the same or different.

[0064] As shown in FIG. 1, the disc body 10 includes a plurality of concentric adsorption grooves 101 and a plurality of radial adsorption grooves 102. Figure 1 As shown in FIG. 1, the disc body 10 includes a plurality of concentric adsorption grooves 101 and a plurality of radial adsorption grooves 102.

[0065] In addition, the radial adsorption grooves are provided with pumping holes 103 for efficient pumping of the gas. As shown in FIG. 1, the pumping holes 103 are arranged in the radial adsorption grooves 102. Figure 1As shown, the extraction hole 103 is formed on the radial adsorption groove 102 in the central region of the disk body 10 and penetrates the disk body 10. One end of the extraction hole 103 is connected to the radial adsorption groove 102, and the other end is connected to the main extraction pipeline 201 in the disk handle 20, thereby transporting the gas collected in the concentric adsorption groove 101 and the radial adsorption groove 102 to the main extraction pipeline 201.

[0066] In addition, the radial adsorption trench is provided with an extraction port 103. The extraction port 103 serves as the final outlet, transporting the gas collected in the concentric adsorption trench 101 and the radial adsorption trench 102 to the main extraction pipeline 201.

[0067] like Figure 1 In the illustrated embodiment, the extraction hole 103 is disposed on the radial adsorption groove 102 in the central region of the disk body 10. The extraction hole 103 penetrates the disk body 10, with one end connected to the radial adsorption groove 102 and the other end connected to the main extraction pipeline 201, directly connecting the radial adsorption groove 102 to the main extraction pipeline 201 in the disk handle 20, for conveying the gas in the concentric adsorption groove 101 and the radial adsorption groove 102 to the main extraction pipeline 201.

[0068] In a further optimized embodiment, the adsorption surface of the disk for supporting the wafer is designed as a concave arc surface. All concentric and radial adsorption grooves are formed on this concave arc surface. This concave arc surface structure can better match the deformation trend of highly warped wafers, providing a larger effective contact and sealing area in the initial stage, thereby further improving the stability and efficiency of initial adsorption.

[0069] Figure 3 A performance comparison chart of various versions of heating plates according to an embodiment of the present invention is disclosed, wherein version V2.2 corresponds to Figure 1 The heating plate structure shown in the embodiment, version V1.2, is a heating plate structure with a concave arc surface.

[0070] The "adsorption window" refers to the range of wafer warpage that the heating plate can completely adsorb. The larger the range, the stronger the ability to adapt to high warpage wafers. The adsorption window of version V2.2 is -1000~+400 micrometers, which is excellent.

[0071] "Surface condition" reflects the critical warp amount at which the thin film on the wafer surface will peel off. In version V2.2, peeling only occurs when the warp amount is ≥800 micrometers.

[0072] The "wafer back edge deposition" index directly reflects the strength of the adsorption force. The smaller the value, the stronger the adsorption force, the better the sealing, and the more difficult it is for the reaction gas to penetrate into the back edge of the wafer to form a film. The back edge deposition of version V2.2 is 3mm, which is the best performance on par with version V1.2, indicating that its adsorption force is strong.

[0073] In summary, version V2.2 exhibits a wide adsorption window of -1000 to +400 μm, while its backside edge deposition value is only 3 mm. Both key performance indicators demonstrate excellent performance, confirming the structure's strong adsorption capacity for high-warpage wafers, good process adaptability, and ability to effectively solve problems such as edge detachment and uneven film deposition. Version V1.2 demonstrates excellent performance in all three key performance indicators and can be considered as one of the preferred embodiments of this invention.

[0074] Figure 4 A graph showing the relationship between the average vacuum gauge pressure value and wafer warpage according to an embodiment of the present invention is disclosed, such as... Figure 4 The curve shown represents wafer warpage (μm) on the horizontal axis and vacuum gauge pressure (torr) on the vertical axis of the heating plate evacuation line. The corresponding test process conditions are a thin film deposition process with a thickness of 50K performed at 280 degrees Celsius.

[0075] Different colored curves correspond to Figure 3 Different heating plate versions, V1 to V3, are shown. The abrupt change in the curve indicates that the wafer warpage has reached the critical state of the heating plate's adsorption limit. When the wafer warpage increases to a certain extent, the vacuum gauge pressure value suddenly rises, indicating that the wafer has failed to be safely adsorbed at this point.

[0076] Among them, the V2.2 version curve shows excellent adsorption stability in a large warp range. For example, it can still maintain a stable low pressure after the wafer warp exceeds 400μm, which directly reflects its wide range of adaptability to high warp wafers.

[0077] Figure 5 A graph showing the relationship between average low-frequency impedance and wafer warpage according to an embodiment of the present invention is disclosed, such as... Figure 5 As shown, the horizontal axis represents wafer warpage, and the vertical axis represents low-frequency impedance. The abrupt change in the curve corresponds to the critical state where the wafer cannot be safely adsorbed. When the wafer is flat and tightly adsorbed on the heating plate, the electrical contact between the two is good, and the impedance value remains at a stable baseline level. When the wafer warpage reaches a certain extent, the electrical contact deteriorates, causing a sudden change in the impedance value, indicating that the wafer has failed to be safely adsorbed at this point.

[0078] The curve for version V2.2 remained stable over a wide warp range without significant abrupt changes, indicating that it maintained a stable electrical contact state throughout the adsorption process. This result is consistent with... Figure 4The vacuum gauge pressure value data of the two heating plates are consistent with each other, and the reliable adsorption performance of the V2.2 version on the high-warp wafer is verified.

[0079] The embodiment provides a semiconductor device, in particular a thin film deposition device such as a chemical vapor deposition (CVD) device. The device comprises any one of the heating plates described above. Due to the use of the heating plate with excellent adsorption performance described above, the thin film deposition device can stably and evenly fix the high-warp wafer, ensure uniform heating of the wafer during the process, significantly improve the uniformity of thin film deposition, reduce particle contamination and film peeling problems, and finally effectively improve the product yield.

[0080] The heating plate and semiconductor device provided by the application have the following beneficial effects.

[0081] 1) The diameter of the outermost circle of the concentric adsorption groove is scientifically determined based on the thin plate bending theory and the vacuum pressure difference principle, so that the vacuum adsorption force generated by the heating plate is sufficient to overcome the minimum adsorption force required for the high-warp wafer to recover flatness, thereby stably and reliably adsorbing and flattening the wafer with a large warping amount;

[0082] 2) The sum of the flow conductance of the concentric and radial adsorption grooves is designed to be much larger than that of the main pumping pipeline, which significantly reduces the gas flow resistance in the groove, so that the gas in the groove can be quickly pumped out, thereby quickly establishing and maintaining the required working pressure difference, and greatly improving the adsorption response speed and pumping efficiency;

[0083] 3) By expanding the cross-sectional area of the adsorption groove and reasonably configuring the number and distribution of the adsorption grooves, the gas in each adsorption groove can be quickly pumped out, the overall vacuum adsorption force is significantly improved, and the uniformity and stability are ensured.

[0084] As shown in the present application and claims, unless the context clearly indicates otherwise, "one", "a", "an", and / or "the" do not refer to the singular, but can also include the plural. Generally speaking, the terms "comprise" and "include" only indicate the inclusion of the steps and elements explicitly identified, and these steps and elements do not constitute an exclusive list, and the method or device can also include other steps or elements.

[0085] In the description of the present application, it should be noted that the terms "upper", "lower", "front", "back", "left", "right", "vertical", "inner", "outer" and the like indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present application and simplifying the description, and therefore cannot be understood as indicating or implying that the devices or elements referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as limiting the present application.

[0086] In the present application, unless otherwise explicitly specified and limited, "on" or "under" of a first feature to a second feature can include that the first and second features are in direct contact, or that the first and second features are not in direct contact but are in contact through another feature between them. Moreover, "on", "above" and "over" of a first feature to a second feature includes that the first feature is directly above and obliquely above the second feature, or only means that the first feature is higher than the second feature in horizontal height. "Under", "below" and "underneath" of a first feature to a second feature includes that the first feature is directly below and obliquely below the second feature, or only means that the first feature is lower than the second feature in horizontal height.

[0087] In the description of the present application, it should be noted that, unless otherwise explicitly specified and limited, the terms "mounting", "connecting", "connection" should be understood in a broad sense, for example, can be fixed connection, can also be detachable connection, or integral connection; can be directly connected, or indirectly connected through an intermediate medium, can be internal communication of two elements. For those skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.

[0088] The above embodiments are provided for those skilled in the art to implement or use the present application, those skilled in the art can make various modifications or changes to the above embodiments without departing from the inventive concept of the present application, therefore the protection scope of the present application is not limited by the above embodiments, but should be the maximum scope of the innovative features mentioned in the claims.

Claims

1. A heating plate, characterized in that, Includes the disc body and the disc handle: The disk body is provided with multiple concentric adsorption grooves and multiple radial adsorption grooves, and the multiple concentric adsorption grooves are connected through the radial adsorption grooves. The handle is provided with a main air extraction pipeline, which is connected to the radial adsorption groove. The diameter of the outermost concentric adsorption trench is determined based on the thin plate bending theory and the vacuum pressure difference principle. The thin plate bending theory is used to calculate the minimum adsorption force required to flatten the wafer, and the vacuum pressure difference is the pressure difference between the upper and lower surfaces of the wafer. The diameter of the outermost concentric adsorption trench is configured such that the vacuum adsorption force generated by the heating plate is greater than or equal to the minimum adsorption force required to flatten the wafer in the predetermined warped state.

2. The heating plate according to claim 1, characterized in that, The minimum adsorption force is related to the wafer's warpage, elastic modulus, thickness, and radius. The minimum adsorption force increases with the increase of wafer warpage, elastic modulus and thickness, and decreases with the increase of wafer radius. The diameter of the outermost concentric adsorption trench is set according to the magnitude of the minimum adsorption force to meet the wafer flattening requirements.

3. The heating plate according to claim 1, characterized in that, The sum of the conductivities of the multiple concentric adsorption trenches and the multiple radial adsorption trenches, and the conductivity ratio of the main extraction pipeline, shall not be less than 10.

4. The heating plate according to claim 1, characterized in that, The number of concentric adsorption grooves is at least 3 rings, and the number of radial adsorption grooves is at least 6.

5. The heating plate according to claim 1, characterized in that, The multiple concentric adsorption grooves are arranged concentrically with the center of the disk as the center; The plurality of radial adsorption grooves are all opened along the diameter direction of the disk body; The multiple concentric adsorption grooves are interconnected through radial adsorption grooves.

6. The heating plate according to claim 1, characterized in that, The multiple concentric adsorption grooves are uniformly distributed around the center of the disk, with the radius difference between adjacent concentric adsorption grooves being equal; and / or The plurality of radial adsorption grooves are evenly distributed around the center of the disk, and the central angles between two adjacent radial adsorption grooves are equal.

7. The heating plate according to claim 1, characterized in that, The multiple concentric adsorption grooves and / or the multiple radial adsorption grooves are non-uniformly distributed on the adsorption surface of the disk.

8. The heating plate according to claim 1, characterized in that, The radial adsorption groove is provided with an air extraction hole: One end of the extraction port is connected to the radial adsorption groove, and the other end is connected to the main extraction pipeline, which is used to transport the gas in the concentric adsorption groove and the radial adsorption groove to the main extraction pipeline.

9. The heating plate according to claim 1, characterized in that, The adsorption surface of the disk for supporting the wafer is a concave arc surface, and the concentric adsorption grooves and radial adsorption grooves are all formed on the concave arc surface.

10. A semiconductor device, characterized in that, Includes the heating plate as described in any one of claims 1 to 9.

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