Bias voltage plasma microcavity terahertz area array detector signal driving amplification and reading circuit

Abstract

At present, there is no mature scheme and product for a bias plasma microcavity terahertz area array detector signal driving amplification and reading circuit. In a laboratory, a power supply for providing bias voltage for a micro-cavity area array detector is relatively large in size, and an oscilloscope is used for collecting signals, so that device integration is not facilitated. The invention discloses a bias plasma microcavity terahertz area array detector signal driving amplification and reading circuit. The circuit comprises an FPGA control board, a terahertz signal driving and collecting board, an array combination interface board and a power module. The terahertz signal driving and collecting board is composed of a driving circuit module and a collecting circuit module, the FPGA control board is a main control board, and multi-channel cooperative control is achieved. The circuit is applied to imaging of a terahertz area array detector, and is of great significance to hidden target detection application.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of terahertz, and particularly relates to a signal driving amplification and readout circuit of a bias plasma microcavity terahertz surface array detector. BACKGROUND

[0002] There are three types of terahertz direct detection technology: thermal principle terahertz detector, plasma field effect tube terahertz detector and photon type terahertz detector. The thermal principle terahertz detector can realize wideband detection, but needs to be in a low-temperature environment to realize high response speed and sensitivity. The plasma field effect tube terahertz detector has fast response speed and high sensitivity, but needs to introduce an antenna to couple the terahertz signal, is only suitable for low-frequency terahertz, and has a relatively narrow bandwidth. The photon type terahertz detector can realize high-frequency terahertz wave detection, has fast response speed, high sensitivity and simple structure, but its response bandwidth is narrow and is limited by the application of a terahertz spectral system. There are few reports on the bias plasma detection principle terahertz detector.

[0003] The terahertz driving circuit mainly includes a source driving circuit, a gate driving circuit and a source differential driving circuit. The terahertz signal of the source driving circuit is input from the source, self-mixing occurs in the channel, and the terahertz signal is output at the drain, and the responsivity is relatively low. The terahertz signal of the gate driving circuit is input from the gate, and the gate controls the plasma wave in the channel, but a complex bias circuit is needed. The source differential driving circuit adopts differential signal input, enhances the intensity of the terahertz signal in the channel, and has a large occupied area. There is no terahertz detector driving circuit that can directly drive the terahertz microcavity array and simultaneously read out the signal.

[0004] At present, there is no mature scheme and product for the signal driving amplification and readout circuit of the bias plasma microcavity terahertz surface array detector. In the laboratory, the power supply for providing the bias voltage for the microcavity surface array detector is relatively large in size, and an oscilloscope is used to collect the signal, which is not conducive to the integration of the device.

[0005] It should be noted that the information disclosed in the above background section is only used to strengthen the understanding of the background of the present application, and therefore can include information that does not constitute prior art known to those of ordinary skill in the art. SUMMARY

[0006] The application provides a bias plasma microcavity terahertz surface array detector signal driving amplification and readout circuit, which comprises a field programmable gate array control board (FPGA control board), a terahertz signal driving and collecting board and an array combination interface board connected in sequence, the array combination interface board is connected with the bias plasma microcavity terahertz surface array detector, the terahertz signal driving and collecting board is connected with a power module, the field programmable gate array control board outputs the detection result in a digital quantization form, the field programmable gate array control board comprises an isolation power supply circuit and a master control module connected with each other, the isolation power supply circuit is connected with the terahertz signal driving and collecting board, and the master control module comprises a first digital isolation chip, a master control unit, a second digital isolation chip and a collection circuit connected in sequence, the terahertz signal driving and collecting board comprises a driving module, a circuit array, a first-stage differential operational amplifier collection circuit and a second-stage signal amplification circuit connected in sequence, the first digital isolation chip is connected with the driving module, and the second-stage signal amplification circuit is connected with the second digital isolation chip.

[0007] The bias plasma microcavity terahertz surface array detector signal driving amplification and readout circuit is composed of four functional modules, namely, an FPGA control board, a terahertz signal driving and collecting board, an array combination interface board and a power control module, and the functional modules are connected in a bus form. The terahertz signal driving and collecting board is composed of a driving circuit and a collection circuit, and the collection circuit comprises a sampling resistor, a first-stage differential operational amplifier collection circuit and a second-stage signal amplification circuit. The array combination interface board is connected with the rear-end bias plasma microcavity terahertz surface array detector, so as to control the plasma discharge and signal collection in the bias plasma microcavity terahertz surface array detector.

[0008] The field programmable gate array control board is a master control board and realizes multi-channel cooperative control. The FPGA control board is used for receiving the control instruction issued by an upper computer, analyzing the instruction, generating a driving signal of an array driving circuit according to a configuration mode, and driving the bias plasma microcavity terahertz surface array detector to work. Meanwhile, the FPGA control board collects the analog signal fed back by the terahertz signal driving and collecting board, integrates and packages the collected data, and then outputs the signal to the upper computer through the USB interface in the FPGA control board.

[0009] The isolation driver integrated in the FPGA control board generates an external driving signal, so as to avoid the influence of external equipment on the circuit itself. The terahertz signal driving and collecting board is used for generating a high-voltage pulse driving signal.

[0010] The soft wire is used for connecting the FPGA control board, the terahertz signal driving and collecting board and the array combination interface board, so that the boards can be combined and installed in different spaces.

[0011] The FPGA control board realizes two-way synchronous pulse driving signals through FPGA logic, and the signals are output through double BNC interfaces, one of which is used for providing a synchronous signal for an external terahertz source, and the other is used for signal detection.

[0012] The readout circuit is applied to the bias plasma microcavity terahertz surface array detector, and the power supply noise crosstalk and the array unit signal crosstalk are small.

[0013] The terahertz signal driving and collecting board receives a command sent by the FPGA control board through a driving signal bus, opens or turns off an electrode at a certain coordinate position on the bias plasma microcavity terahertz surface array detector according to the corresponding coordinate, synchronously collects the current of the electrode at the present time through an ADC collecting circuit and sends the current back to the FPGA, and then outputs the current signal of the electrode through a USB interface, and the current signal carries the circuit information converted by the terahertz wave. The terahertz signal driving and collecting board is used to generate a high-voltage pulse driving signal for driving the microcavity terahertz surface array detector, and uses a sampling resistor integrated in the board, cooperates with a sampling pre-processing operational amplifier circuit, collects and picks up the signal change generated after the terahertz irradiation bias plasma microcavity array, and then leads out through an array combination interface board and sends into the FPGA control board for analog-digital conversion, and uses an integrated high-end driving IC in the module to realize the switching control of a high-end NMOS.

[0014] The sampling signal is converted from current to voltage through a sampling resistor, and an original signal is coupled to a high common-mode differential operational amplifier in an AC coupling mode for signal collection; the operational amplifier circuit is realized by two-stage operational amplifiers, the first stage uses a high common-mode differential operational amplifier to realize the conversion of differential voltage to single-ended voltage, and the second stage realizes the filtering and amplification processing of the sampling signal. The power module is a 400V / 1A high-voltage power supply.

[0015] Another embodiment provided in the application is that the isolation power supply circuit includes a low-voltage end control power supply and a high-voltage end control power supply which are isolated from each other, the low-voltage end control power supply is connected with the main control unit, and the high-voltage end control power supply is connected with the terahertz signal driving and collecting board. The power supply of the terahertz signal driving and collecting board is divided into low-voltage side power supply and high-voltage side power supply, and the power supplies on the two sides are designed to be isolated, so that the working stability and reliability of the entire circuit can be improved.

[0016] Specifically, the power supply provided by the USB interface is called low-voltage end power supply, and the power supply provided by the power module is called high-voltage end power supply. The power module provides high-voltage power of 100-400V to the driving and acquisition board, which is used for array lighting. After lighting, the signal needs to be collected by the acquisition circuit. The operational amplifier chip used for acquisition cannot be powered by 100-400V voltage, otherwise it will be blown, and can only be powered by 3.3V-5V. The 3.3V-5V here is the power supply ground of 100V-400V, which is divided according to the power supply ground, and belongs to the high-voltage side. Therefore, the 100V-400V from the power module is called high-voltage end power supply, and the 3.3V-5V supplied by the ground is called high-voltage end control power supply.

[0017] The low-voltage end and the high-voltage end must be isolated, otherwise once the chip is damaged or broken down due to abnormal conditions, the 100V-400V voltage will be directly transmitted to the computer through the USB interface, causing unpredictable danger.

[0018] The voltage directly obtained by changing the 100V-400V high voltage is too large in the input voltage range, and the voltage drop is too large. The 3.3V-5V high-voltage end is obtained by an isolated DC / DC that converts the low-voltage side USB power supply to a set of 3.3V-5V power supply that is isolated from the low-voltage side ground and supplied by the high-voltage side ground, which is called high-voltage end control power supply.

[0019] The high-voltage end power supply is a secondary power supply generated by the low-voltage end power supply through an isolated DC / DC circuit. The high-voltage end power supply is supplied by the power module ground, and the output voltage of the power module is 100-400V. This high voltage is used for MOS tube and terahertz array lighting driving power supply, but for the driving chip and the operational amplifier chip of the acquisition part, 3.3V and 5V voltages that are normal working voltages with 100-400V ground are also needed. Such voltages cannot be directly converted from 100-400V, so an isolated DC / DC circuit needs to be designed on the main control board to generate such high-end control power supply.

[0020] The terahertz signal driving and acquisition board adopts an external high-voltage high-power DC power supply power supply mode; the control power supply and the power supply are independently powered and completely isolated, which ensures that the power supply noise will not be coupled to the circuit.

[0021] Another embodiment provided by the application is that the circuit array includes a sampling resistor and a metal oxide semiconductor field effect transistor (MOS). The sampling resistor is connected with the first differential operational amplifier acquisition circuit, and the metal oxide semiconductor field effect transistor is connected with the driving module.

[0022] The terahertz signal driving and collecting board utilizes a built-in sampling resistor, cooperates with a sampling pre-processing operational amplifier circuit, reads out a signal and leads out through an FPC interface, and sends into an FPGA control board card to perform analog-digital conversion of the signal. The terahertz signal driving and collecting board has an integrated IC of high-end driving to realize switch control of a high-end NMOS.

[0023] Another embodiment provided in the application is that the field programmable gate array control board, the terahertz signal driving and collecting board and the array combination interface board are all functional circuit board cards, and the inter-board connectors are used to realize electrical connection by plugging.

[0024] Another embodiment provided in the application is that the array combination interface board comprises a plurality of interfaces, and the interfaces are arranged in an n*n array.

[0025] The application provides a bias plasma microcavity terahertz surface array detector signal driving amplification and readout circuit, which has at least the following beneficial effects:

[0026] (1) The bias plasma microcavity terahertz surface array detector signal driving amplification and readout circuit provided in the application can solve the problem that the current bias plasma microcavity terahertz surface array detector does not have an integrated circuit, and can be used for terahertz surface array detector imaging, which has important significance for covert target detection application.

[0027] (2) The bias plasma microcavity terahertz surface array detector signal driving amplification and readout circuit provided in the application is a secondary power supply generated by an isolated DC / DC circuit from a low-voltage power supply, and the power supply and the power module are supplied with ground. The control power supply and the power supply are independently powered, and are completely isolated, so that the power supply noise cannot be coupled to the circuit, and the signal-to-noise ratio of the collected signal is improved. BRIEF DESCRIPTION OF DRAWINGS

[0028] The drawings incorporated into the specification and forming a part thereof show embodiments consistent with the application and, together with the specification, serve to explain the principles of the application. Obviously, the drawings in the following description are only some embodiments of the application, and other drawings can be obtained from these drawings without creative labor for those skilled in the art.

[0029] Figure 1 is a composition block diagram of the bias plasma microcavity terahertz surface array detector signal driving amplification and readout circuit of the application;

[0030] Figure 2 is a flowchart of the bias plasma microcavity terahertz surface array detector signal driving amplification and readout circuit of the application;

[0031] Figure 3is the printed circuit of the FPGA control board of the application;

[0032] Figure 4 is the printed circuit of the bias plasma microcavity terahertz surface array detector signal driving and collecting board of the application;

[0033] Figure 5-1 is the array driving part circuit schematic diagram of the bias plasma microcavity terahertz surface array detector terahertz signal driving and collecting board of the application;

[0034] Figure 5-2 is the single pixel driving circuit schematic diagram of the application;

[0035] Figure 6 is the 4*4 array combination interface circuit diagram of the application. DETAILED DESCRIPTION

[0036] Example implementations will now be described more fully with reference to the accompanying drawings. Example implementations may, however, be implemented in many different forms and should not be construed as limited to the examples set forth herein; rather, these implementations are provided so that this disclosure will be thorough and complete, and will fully convey the scope of example implementations to those skilled in the art. The described features, structures, or characteristics can be combined in one or more implementations.

[0037] In addition, the drawings are to be considered in all respects as illustrative and not restrictive; identical reference numerals have been used, where possible, to denote identical or similar features, and thus repetition of the description thereof will be omitted. Some of the block diagrams shown in the drawings are functional entities that do not necessarily have to correspond to physically or logically independent entities. These functional entities can be implemented in the form of software, or in one or more hardware modules or integrated circuits, or in different network and / or processor devices and / or microcontroller devices.

[0038] Below, a bias plasma microcavity terahertz surface array detector signal driving amplification and readout circuit proposed in the present example embodiment will be described in more detail.

[0039] The application provides a bias plasma microcavity terahertz surface array detector signal driving amplification and readout circuit, which comprises a field programmable gate array control board, a terahertz signal driving and collecting board and an array combination interface board connected in sequence, the array combination interface board is connected with the bias plasma microcavity terahertz surface array detector, the terahertz signal driving and collecting board is connected with a power module, the field programmable gate array control board is connected with an upper computer, the field programmable gate array control board is connected with a terahertz source, the field programmable gate array control board comprises an isolation power supply circuit and a main control module connected with each other, the isolation power supply circuit is connected with the terahertz signal driving and collecting board, and the main control module comprises a first digital isolation chip, a main control unit, a second digital isolation chip and a collection circuit connected in sequence, the terahertz signal driving and collecting board comprises a driving module, a circuit array, a first-stage differential operational amplifier collection circuit and a second-stage signal amplification circuit connected in sequence, the first digital isolation chip is connected with the driving module, and the second-stage signal amplification circuit is connected with the second digital isolation chip.

[0040] As shown in Figure 1 The example embodiment provides a bias plasma microcavity terahertz surface array detector signal driving amplification and readout circuit principle diagram, which mainly consists of four parts: an FPGA control board, a terahertz signal driving and collecting board, an array combination interface board and a power module. The terahertz signal driving and collecting board is composed of a driving circuit and a collection circuit, and the collection circuit module is composed of a sampling resistor, a first-stage high common-mode differential operational amplifier and a second-stage operational amplifier.

[0041] The signal driving amplification and readout circuit working flow chart is shown in Figure 2 When the signal driving amplification and readout circuit starts to work, the FPGA control board receives the control instruction of the upper computer through the USB interface, analyzes the control instruction, then generates the driving signal of the array driving circuit according to the configuration mode, and drives the bias plasma microcavity terahertz surface array detector to work. At the same time, the analog signal fed back by the driving and collecting board is collected, the collected data is integrated and packaged, and then output to the upper computer through the USB interface of the FPGA control board. The driving and sampling circuit power supply is divided into low-voltage side power supply and high-voltage side power supply, and the power supplies on both sides are designed to be isolated.

[0042] In the embodiment, the low-voltage end control power supply modulates the input voltage and supplies power to the rear-end FPGA and the driving and collecting circuit board. The high-voltage driving power supply is connected with an external power module through a power plug. The FPGA as the main control chip realizes the driving control of the rear-end, the voltage regulation of the power module, the ADC sampling of the electrode plate electrode current and the communication with the upper computer. The voltage regulation control of the power module is from the FPGA, and the FPGA controls the voltage regulation of the power module.

[0043] As shown in Figure 2As shown: After the control power supply (USB interface) and power supply (power module) are powered on, the FPGA logic of the main control board starts running and completes the system initialization operation of the drive circuit and sampling circuit. After the operation is completed, it starts to wait for the control command issued by the host computer.

[0044] Upon receiving the correct instruction from the host computer, the FPGA logic parses the instruction, determines its function, and implements column-by-column, single-column, and single-point drive acquisition modes for the terahertz array based on the instruction's function. Simultaneously, according to the FPGA's internal sampling timing, after each lighting operation, it outputs a terahertz excitation signal to control the terahertz output. At this time, the terahertz signal illuminates the array. Subsequently, the FPGA controls the sampling circuit to read the ADC data of the corresponding channel. After sampling is completed, the FPGA combines the sampled data and sends it to the host computer via the USB interface. Then, it turns off the terahertz source excitation signal, shuts down the corresponding MOSFET drive, and begins the next repetitive operation.

[0045] The FPGA control board features dual BNC interface drive signal outputs: one for providing a synchronization signal to an external terahertz source, and the other for signal detection. Through the drive circuit on the FPGA control board, the electrode at a specific coordinate position on the biased plasma microcavity terahertz array detector is turned on or off according to the corresponding coordinates. Simultaneously, the real-time current of this electrode is acquired by the ADC acquisition circuit and sent back to the FPGA. The FPGA control board then outputs the electrode current signal via a USB interface; this current signal carries the circuit information after terahertz wave conversion.

[0046] Furthermore, the circuit array includes a sampling resistor and a metal-oxide-semiconductor field-effect transistor (MOSFET). The sampling resistor is connected to the first-stage differential operational amplifier acquisition circuit, and the MOSFET is connected to the driving module.

[0047] Furthermore, the field-programmable gate array control board, the terahertz signal driving and acquisition board, and the array combination interface board are all functional circuit boards, and the boards are electrically connected by inter-board connectors.

[0048] Furthermore, the array combination interface board includes several interfaces, which are arranged in an n*n array.

[0049] In this implementation scheme, the FPGA is a PG2L50H_MBG324_0 chip (which enables parallel processing for multi-channel data sampling, greatly improving sampling and response rates), and is a programmable logic device. The FPGA control board printed circuit board layout is as follows: Figure 3 As shown.

[0050] Terahertz signal drive and acquisition board printed circuit board layout as followsFigure 4 The terahertz signal driving and collecting board is used for generating a high-voltage pulse driving signal for driving the microcavity terahertz surface array detector, collecting the signal change amount generated after the terahertz irradiation plasma microcavity array is picked up by using the sampling resistor integrated in the board card, cooperating with the sampling pre-processing operational amplifier circuit, and leading out the signal change amount through the array combination interface board and sending it into the FPGA control board for analog-digital conversion of the signal. The integrated high-end driving IC in the module is used to realize the switch control of the high-end NMOS. In the collecting board, the sampling chip uses ADS8684A, and the voltage drop on the sampling resistor is collected by combining the 1K sampling resistor.

[0051] The terahertz signal driving and collecting board array driving part circuit is as shown in Figure 5-1 The single pixel driving circuit is as shown in Figure 5-2 The sampling signal is converted from current to voltage through the sampling resistor, and the original signal is coupled to the high common-mode differential operational amplifier in an AC coupling manner for signal collection. The operational amplifier circuit is realized by two-stage operational amplifiers. The first stage uses a high common-mode differential operational amplifier to realize the conversion of differential voltage to single-ended voltage, and the second stage realizes the filtering and amplification processing of the sampling signal.

[0052] In this embodiment, the signal sampling circuit background noise suppression module normally picks up the collected signal, and reduces the noise interference of the sampling signal. The working process of this module is as follows: a multi-stage signal filtering method is used. Firstly, the output current signal of the terahertz irradiation microcavity is converted into a voltage signal through a sampling resistor at the signal input end, and then a high common-mode differential operational amplifier is used to convert the high-end voltage signal into a low-end voltage signal, while realizing the direct current isolation processing. A low-noise differential operational amplifier is selected to extract the effective signal.

[0053] After the differential operational amplifier completes the signal extraction, the signal is first filtered in the filtering circuit, and then amplified in the amplification circuit to avoid directly amplifying noise and further suppress noise. The amplified sampling signal is sent to the ADC for sampling. In the PCB layout, the output of the operational amplifier is connected to the input end of the ADC by using a pseudo-differential wiring method. The input end of the selected ADC sampling chip supports differential signal input. A first-level filtering is performed at the input end of the ADC to minimize the noise of the sampling signal to the ADC input port.

[0054] The power module is divided into a control power supply and a power supply. The control power supply is used to power the FPGA control board, and the power supply is used to power the terahertz signal driving and collecting board. The control power supply and the power supply are independently powered and completely isolated. The coupling signals on both sides are isolated by using isolating devices, and the PCB layout is completely physically separated to ensure that the control power supply noise cannot be coupled to the power sampling circuit part, and the circuit will not generate noise again.

[0055] When the terahertz signal driving and collecting board involves power voltage conversion, LDO chip is used to complete voltage conversion to avoid secondary noise interference caused by switching power supply. Through the above measures, the power noise coupling of the entire circuit is as small as possible.

[0056] In the embodiment, the array combination interface is designed as a 4*4 array, which can be expanded to an n*n array, as shown in Figure 6 The 4*4 array combination interface circuit diagram is shown.

[0057] In the embodiment, the overall function circuit adopts a split board design, and the inter-board signal interconnection is connected by using a soft wire, which facilitates the combination and installation of the board card in different spaces. The FPGA control board and the terahertz signal driving and collecting board are in the form of upper and lower stacked boards, the inter-board signal is connected by using FPC soft wire through the FPC connector, the terahertz signal driving and collecting board and the 4*4 array combination interface board adopt a separated type, which facilitates the placement of the interface board in different areas or test racks, and the terahertz signal driving and collecting board and the 4*4 array combination interface board are connected by using a gray wire.

[0058] The sampling circuit and the external terahertz radiation use the same source control to ensure the signal collection accuracy, the terahertz excitation control is integrated into the FPGA control board, the sampling and terahertz excitation signals are synchronously generated by using the master control FPGA, and the phase difference of the sampling and excitation signals can be adjusted to ensure the accuracy of sampling and the synchronization of sampling timing.

[0059] In addition, the terms "first", "second", "third", etc. are used only for descriptive purposes and should not be construed as indicating or implying relative importance or a specific number of the technical features indicated. Therefore, the features defined as "first", "second", etc. can explicitly or implicitly include one or more of the features. In the description of the embodiments of the present application, the meaning of "a plurality of" is two or more, unless otherwise specifically limited.

[0060] In the description of the present application, the description of the terms "one embodiment", "some embodiments", "an example", "a specific example" or "some examples" means that the specific features, structures, materials or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of the present application. In the present application, the illustrative description of the above terms is not necessarily for the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art can combine and combine different embodiments or examples described in the present application.

[0061] The above description is only the specific implementation of the present application, but the protection scope of the present application is not limited thereto, any person skilled in the art can easily think of various equivalent modifications or replacements within the technical scope disclosed by the present application, and these modifications or replacements shall be covered within the protection scope of the present application.

[0062] Other embodiments of the application will be apparent to those skilled in the art from consideration of the specification and practice of the application disclosed herein. It is intended that the specification and examples be considered as exemplary only, with a true scope and spirit of the application being indicated by the following claims.

Claims

1. A signal driving amplification and readout circuit for a biased plasma microcavity terahertz array detector, characterized in that, The system comprises a field-programmable gate array (FPGA) control board, a terahertz signal driving and acquisition board, and an array combination interface board connected in sequence. The array combination interface board is connected to a biased plasma microcavity terahertz array detector. The terahertz signal driving and acquisition board is connected to a power supply module. The FPGA control board is connected to a host computer and a terahertz source. The FPGA control board includes an isolated power supply circuit and a main control module connected to each other. The isolated power supply circuit is connected to the terahertz signal driving and acquisition board. The main control module includes a first digital isolation chip, a main control unit, a second digital isolation chip, and an acquisition circuit connected in sequence. The terahertz signal driving and acquisition board includes a driving module, a circuit array, a first-stage differential operational amplifier acquisition circuit, and a second-stage signal amplification circuit connected in sequence. The first digital isolation chip is connected to the driving module, and the second-stage signal amplification circuit is connected to the second digital isolation chip.

2. The biased plasma microcavity terahertz array detector signal driving amplification and readout circuit according to claim 1, characterized in that, The isolated power supply circuit includes a low-voltage control power supply and a high-voltage control power supply that are isolated from each other. The low-voltage control power supply is connected to the main control unit, and the high-voltage control power supply is connected to the terahertz signal drive and acquisition board.

3. The biased plasma microcavity terahertz array detector signal driving amplification and readout circuit according to claim 2, characterized in that, The low-voltage control power supply and the high-voltage control power supply are isolated by a DC / DC circuit.

4. The biased plasma microcavity terahertz array detector signal driving amplification and readout circuit according to claim 3, characterized in that, The circuit array includes a sampling resistor and a metal-oxide-semiconductor field-effect transistor. The sampling resistor is connected to the first-stage differential operational amplifier acquisition circuit, and the metal-oxide-semiconductor field-effect transistor is connected to the driving module.

5. The biased plasma microcavity terahertz array detector signal driving amplification and readout circuit according to claim 4, characterized in that, The field-programmable gate array control board, the terahertz signal drive and acquisition board, and the array combination interface board are all functional circuit boards, and the boards are electrically connected by inter-board connectors.

6. The biased plasma microcavity terahertz array detector signal driving amplification and readout circuit according to claim 5, characterized in that, The array combination interface board includes several interfaces, which are arranged in an n*n array.

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