Hall magnetic sensor and preparation method thereof

Abstract

The invention provides a Hall magnetic sensor and a preparation method thereof. The Hall magnetic sensor comprises a semiconductor substrate; the emitter region is positioned in the semiconductor substrate; the base region is positioned around the emitter region and is adjacent to the emitter region; the first collector region and the second collector region are located on the periphery of the base region and are adjacent to the base region, and the first collector region and the second collector region which surround the base region are arranged in pairs at intervals. The magnitude of the magnetic field is detected based on a difference between currents flowing through the first collector region and the second collector region. According to the Hall magnetic sensor and the preparation method thereof, the Hall magnetic sensor is formed by the triode with the transverse structure, so that the width of the base region is relatively narrow, the amplification coefficient of the triode is relatively large, relatively large current can be obtained in the collector region, and the sensitivity of the Hall magnetic sensor is relatively high.

Description

Technical Field

[0001] This application relates to the field of semiconductor technology, specifically to a Hall magnetic sensor and its fabrication method. Background Technology

[0002] Hall magnetic sensors can detect the magnitude of a magnetic field and generate a proportional output electrical signal. They are widely used in signal detection, industrial production, biomedicine and other fields. Hall magnetic sensors based on BCD technology have a large number of mature mass-produced products due to their advantages of low cost and high compatibility.

[0003] However, the limited mobility of silicon (Si) material itself results in low sensitivity of existing Hall effect sensors. Current industry research focuses on improving sensor sensitivity primarily through the development of new materials, such as gallium arsenide (GaAs), indium arsenide (InAs), gallium nitride (GaN), and indium antimonide (InSb). However, the compatibility of these new materials with process technology and platforms presents challenges. Therefore, other simple and feasible approaches are needed to improve sensor sensitivity. Summary of the Invention

[0004] The purpose of this application is to provide a Hall magnetic sensor and its fabrication method, wherein the Hall magnetic sensor has high sensitivity.

[0005] To achieve the above objectives, this application provides the following technical solution: This application provides a Hall magnetic sensor, the Hall magnetic sensor comprising: Semiconductor substrate; The emission region is located within the semiconductor substrate; A base region located around and adjacent to the emission region; A first collector region and a second collector region are located around and adjacent to the base region. The first collector region and the second collector region are arranged in pairs around the base region at intervals. When the Hall magnetic sensor is in a magnetic field, the magnitude of the magnetic field is detected based on the difference in current flowing through the first collector region and the second collector region.

[0006] In one embodiment, the base region is square-shaped, and the first collector region and the second collector region are both located outside one side of the base region, or the first collector region and the second collector region are located at one corner of the base region and are respectively located outside the two adjacent sides of that corner; or, the base region is circular-shaped.

[0007] In one embodiment, the first collector region and the second collector region are in multiple pairs, with each of the first collector regions connected in parallel via a first conductive line and each of the second collector regions connected in parallel via a second conductive line.

[0008] In one embodiment, the spacing between the first collector area and the second collector area is a first preset distance; the spacing between an adjacent pair of first collector areas and second collector areas and another pair of first collector areas and second collector areas is a second preset distance, and the first preset distance is less than the second preset distance.

[0009] In one embodiment, each of the first collector region and the second collector region is arranged in pairs and uniformly around the base region.

[0010] In one embodiment, along a direction perpendicular to the thickness of the semiconductor substrate, the height of the base region is lower than the height of the emitter region, the first collector region, and the second collector region. The top of the base region has a first isolation structure, and the emitter region is isolated from the first collector region and the second collector region respectively through the first isolation structure.

[0011] In one embodiment, the emitter region, the first collector region, and the second collector region all extend from the surface of the semiconductor substrate into the interior of the semiconductor substrate. The emitter region has a current enhancement region near the surface of the semiconductor substrate, and the concentration of conductive ions doped in the current enhancement region is greater than the concentration of conductive ions doped in the emitter region.

[0012] In one embodiment, the Hall magnetic sensor further includes a base region extension region located outside the first collector region and the second collector region, the base region extension region extending from the surface of the semiconductor substrate to the interior of the semiconductor substrate, and the base region extension region being isolated from the first collector region and the second collector region respectively by a second isolation structure.

[0013] In one embodiment, the Hall magnetic sensor further includes: a buried layer located below the emission region, the base region, the first collector region, the second collector region, and the base region extension region, wherein the type of conductive ions doped in the buried layer is the same as the type of conductive ions doped in the base region and the base region extension region, and the base region and the base region extension region are electrically connected based on the buried layer; The bottom of the transmitting region, the base region, the first collector region, the second collector region, and the base region extension region are in contact with the surface of the buried layer.

[0014] This application also provides a method for fabricating a Hall magnetic sensor, the method comprising: Provide semiconductor substrates; P-type and N-type conductive ion implantation is performed on the semiconductor substrate to form an emitter region located within the semiconductor substrate, a base region located around the emitter region and adjacent to the emitter region, and a first collector region and a second collector region located around the base region and adjacent to the base region. The first collector region and the second collector region are arranged in pairs around the base region.

[0015] Compared with the prior art, the technical solution of this application has the following beneficial effects: In the Hall magnetic sensor and its fabrication method described in this application, the Hall magnetic sensor is constructed using a transversely structured transistor, wherein the base region is located around and adjacent to the emitter region, and the first collector region and the second collector region surround and are adjacent to the base region, making the base region narrower. Therefore, the transistor has a larger amplification factor and can obtain a larger current in the collector region, thereby making the Hall magnetic sensor more sensitive. Attached Figure Description

[0016] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0017] Figure 1 A side view schematic diagram of a Hall magnetic sensor provided for the first embodiment of this application; Figure 2 for Figure 1 A top view of point AA, where the semiconductor substrate portion surrounding the base extension region is not shown; Figure 3 This is a schematic diagram illustrating the current deflection of a Hall magnetic sensor in a magnetic field according to an embodiment of this application; Figure 4 This is a schematic flowchart illustrating a method for fabricating a Hall magnetic sensor according to the second embodiment of this application. Detailed Implementation

[0018] The technical solutions in the embodiments of this application will be clearly and completely described below. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of the embodiments. Based on the embodiments in this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application. It should be noted that the order of description of the following embodiments is not intended to limit the preferred order of the embodiments of this application. Moreover, in the following embodiments, the description of each embodiment has its own emphasis, and for parts not described in detail in a certain embodiment, please refer to the relevant descriptions of other embodiments.

[0019] Please refer to the following: Figure 1 and Figure 2 As shown, a Hall magnetic sensor provided in the first embodiment of this application may include a semiconductor substrate 9. The semiconductor substrate 9 may be any suitable substrate, and this application does not have any particular requirements for the semiconductor substrate 9; it may also be a substrate with an epitaxial layer, or an epitaxial layer may be formed on the substrate, in which case the Hall magnetic sensor is formed within the epitaxial layer.

[0020] The Hall magnetic sensor of this application may further include an emission region 1 located within the semiconductor substrate 9. The emission region 1 may be columnar, and the projection of the emission region 1 onto the semiconductor substrate 9 may be square or circular.

[0021] The Hall magnetic sensor of this application may further include a base region 2 located around and adjacent to the emitting region 1. In the projection direction onto the semiconductor substrate 9, the base region 2 may be annular, surrounding the emitting region 1. When the projection of the emitting region 1 onto the semiconductor substrate 9 is square, the projection of the base region 2 onto the semiconductor substrate 9 is also square; when the projection of the emitting region 1 onto the semiconductor substrate 9 is circular, the projection of the base region 2 onto the semiconductor substrate 9 is also circular.

[0022] The Hall magnetic sensor of this application may further include a first collector region 31 and a second collector region 32 (collectively referred to as collector regions) located around and adjacent to the base region 2, with the first collector region 31 and the second collector region 32 arranged in pairs at intervals around the base region 2 (see [reference]). Figure 2 (As shown in the blue dashed box), when the Hall magnetic sensor is in a magnetic field, the magnitude of the magnetic field is detected based on the difference in current flowing through the first collector region 31 and the second collector region 32.

[0023] The first collector region 31, base region 2, and emitter region 1 essentially constitute one transistor, and the second collector region 32, base region 2, and emitter region 1 essentially constitute another transistor. The first collector region 31 and the second collector region 32 have the same shape and size. When the Hall magnetic sensor is not in a magnetic field, the current flowing out of the first collector region 31 is the same as the current flowing out of the second collector region 32; when the Hall magnetic sensor is in a magnetic field, the current flowing out of the first collector region 31 and the current flowing out of the second collector region 32 deflect (see [reference]). Figure 3As shown in the diagram, a difference arises between the two. By detecting this current difference, the magnitude of the magnetic field can be deduced; this is the working principle of the Hall magnetic sensor. In the Hall magnetic sensor of this application, the collector region is located outside the base region 2, and the base region 2 is located outside the emitter region 1. Therefore, the transistors formed are all transverse transistors. That is, this application uses transverse transistors to construct a new Hall magnetic sensor, wherein the width of the base region 2 of the transistor can be narrower, the amplification factor of the transistor can be larger, and a larger current can be obtained in the collector region, thereby making the Hall magnetic sensor more sensitive.

[0024] In one embodiment, the base region 2 is a square ring shape, with the first collector region 31 and the second collector region 32 both located outside one side of the base region 2, or the first collector region 31 and the second collector region 32 located at one corner of the base region 2, each located outside the adjacent two sides of that corner. That is, the collector regions only need to be located around the base region 2; there are no specific requirements for their exact positions, only the spacing distance, which will be discussed later, needs to be considered. Therefore, in another embodiment, the base region 2 can also be a circular ring shape.

[0025] The number of first collector regions 31 and second collector regions 32 can be one or more. In one embodiment, there are multiple pairs of first collector regions 31 and second collector regions 32, with each first collector region 31 connected in parallel via a first conductive line, and each second collector region 32 connected in parallel via a second conductive line (please refer to [reference]). Figure 3 (As shown).

[0026] Multiple first collector regions 31 are connected in parallel via a first conductive line, and multiple second collector regions 32 are connected in parallel via a second conductive line. In this way, the total current of the detected first collector region 31 can be larger, the total current of the second collector region 32 can be larger, and the difference between the total current of the first collector region 31 and the total current of the second collector region 32 can be larger and more accurate, so as to more accurately reflect the direction and magnitude of the magnetic field, making the Hall magnetic sensor of this application have high sensitivity.

[0027] In one embodiment, the distance d1 between the first collector region 31 and the second collector region 32 is a first preset distance, which can be set to different values ​​at different process nodes. The first preset distance cannot be too large, so as to ensure that when the Hall magnetic sensor is in a magnetic field, the deflection of the current flowing out of the first collector region 31 and the current flowing out of the second collector region 32 will cause a difference between them; if the distance between the first collector region 31 and the second collector region 32 is too large, then although the current flowing out of the first collector region 31 and the current flowing out of the second collector region 32 will both be deflected, the deflection will be the same and will not affect each other, so there will be no difference between them.

[0028] In one embodiment, the spacing d2 between an adjacent pair of first collector regions 31 and second collector regions 32 and another pair of first collector regions 31 and second collector regions 32 is a second preset distance. This second preset distance can be set to different values ​​at different process nodes. In one embodiment, the first preset distance is smaller than the second preset distance. The second preset distance cannot be too small, so as to ensure that there is no mutual influence between adjacent pairs of collector regions when the Hall magnetic sensor is in a magnetic field. If the distance between adjacent pairs of collector regions is too small, the deflection of the current in one pair of collector regions will affect the deflection of the current in the other pair of collector regions, thereby making the measured current difference inaccurate and affecting the sensitivity of the Hall magnetic sensor.

[0029] In one embodiment, each of the first collector regions 31 and the second collector regions 32 are arranged in pairs and uniformly around the base region 2.

[0030] Each first collector region 31 and second collector region 32 can be arranged clockwise or counterclockwise around the base region 2 in the order of first collector region 31 and second collector region 32. This ensures that the current flowing through each first collector region 31 deflects in the same direction and magnitude in the magnetic field, and the current flowing through each second collector region 32 deflects in the same direction and magnitude in the magnetic field. The direction and magnitude of the current difference generated by the mutual influence between the first collector region 31 and the second collector region 32 in the magnetic field within each pair of collector regions are also the same. Thus, the total current difference of the detected collector regions is relatively large and accurate, which can correctly reflect the direction and magnitude of the magnetic field, making the Hall magnetic sensor of this application have high sensitivity.

[0031] In one embodiment, along a direction perpendicular to the thickness of the semiconductor substrate 9, the height of the base region 2 is lower than the height of the emitter region 1, the first collector region 31, and the second collector region 32. The top of the base region 2 has a first isolation structure 71, and the emitter region 1 is isolated from the first collector region 31 and the second collector region 32 respectively through the first isolation structure 71.

[0032] The base region 2 is located between the collector region and the emitter region 1, and is isolated by a first isolation structure 71 on top. Therefore, its size in the vertical direction (perpendicular to the thickness of the semiconductor substrate 9) is relatively small compared to both the collector region and the emitter region 1. Thus, the width of the transistor base region 2 can be narrower, the amplification factor of the transistor can be larger, and a larger current can be obtained in the collector region, thereby making the Hall magnetic sensor more sensitive.

[0033] In one embodiment, the emitter region 1, the first collector region 31, and the second collector region 32 all extend from the surface of the semiconductor substrate 9 into the interior of the semiconductor substrate 9. The emitter region 1 is provided with a current enhancement region 12 near the surface of the semiconductor substrate 9. The concentration of conductive ions doped in the current enhancement region 12 is greater than the concentration of conductive ions doped in the emitter region 1.

[0034] The current enhancement region 12 can be a heavily doped region, which essentially makes the emitter region 1 have a higher concentration of conductive ions, giving the transistor a higher amplification factor and allowing the collector region to obtain a larger current, thereby improving the sensitivity of the Hall magnetic sensor.

[0035] Correspondingly, the base region 2 is located only inside the semiconductor substrate 9, and a first isolation structure 71 is located above the base region 2, thus preventing the placement of an access port above it. Therefore, in one embodiment, the Hall magnetic sensor further includes a base region extension region 4 located outside the first collector region 31 and the second collector region 32. The base region extension region 4 extends from the surface of the semiconductor substrate 9 to the interior of the semiconductor substrate 9, and the base region extension region 4 is isolated from the first collector region 31 and the second collector region 32 respectively by the second isolation structure 72.

[0036] The base extension region 4 is isolated from the first collector region 31 and the second collector region 32 by a second isolation structure 72, so they do not directly contact each other. Therefore, only the base region 2 serves as the base region of the transistor, ensuring that the base region of the transistor has a narrower width, so that the transistor has a larger amplification factor. The base extension region 4 only serves as an auxiliary electrical connection.

[0037] In one embodiment, the Hall magnetic sensor may further include: a buried layer 5 located below the emitting region 1, the base region 2, the first collector region 31, the second collector region 32, and the base region extension region 4, wherein the type of conductive ions doped in the buried layer 5 is the same as the type of conductive ions doped in the base region 2 and the base region extension region 4, and the base region 2 and the base region extension region 4 are electrically connected based on the buried layer 5.

[0038] The buried layer 5 is located below the transmitting region 1, the base region 2, the first collector region 31, the second collector region 32, and the base region extension region 4. The base region extension region 4 is electrically connected to the base region 2 from the bottom, so that the signal from the base region 2 can be extracted simply by setting an access port on the base region extension region 4. In one embodiment, the bottoms of the transmitting region 1, the base region 2, the first collector region 31, the second collector region 32, and the base region extension region 4 are in contact with the surface of the buried layer 5, resulting in a compact and small structure for the entire Hall magnetic sensor.

[0039] In one embodiment, the Hall magnetic sensor may further include: an emission region access port 18 of the emission region 1 located on the surface portion of the semiconductor substrate 9, a first collector region access port 38 of the first collector region 31 located on the surface portion of the semiconductor substrate 9, a second collector region access port 39 of the second collector region 32 located on the surface portion of the semiconductor substrate 9, and a base region extension region 4 located at a base region access port 28 on the surface portion of the semiconductor substrate 9.

[0040] Among them, emitter access port 18, first collector access port 38, second collector access port 39, and base access port 28 are all heavily doped regions. Their ion doping type is the same as that of the corresponding connected emitter region 1, first collector region 31, second collector region 32, and base extension region 4, and the concentration of doped ions is higher than that of the corresponding connected emitter region 1, first collector region 31, second collector region 32, and base extension region 4.

[0041] Like the emitter region 1, the first collector region 31, and the second collector region 32, the base extension region 4 extends from the surface of the semiconductor substrate 9 to its interior. Therefore, the emitter region 1, the first collector region 31, the second collector region 32, and the base extension region 4 can similarly have an emitter access port 18 (referred to as emitter e), a first collector access port 38, a second collector access port 39 (both referred to as collector c), and a base access port 28 (referred to as base b) respectively located on the surface portion of the semiconductor substrate 9. In this way, the complete structure of the Hall magnetic sensor is formed.

[0042] In one embodiment, the Hall magnetic sensor may further include a third isolation structure 73 located outside the base region extension region.

[0043] When fabricating a Hall magnetic sensor, multiple Hall magnetic sensors are fabricated simultaneously on a single wafer. Adjacent Hall magnetic sensors are isolated by a third isolation structure 73. The structure within the area enclosed by a third isolation structure 73 constitutes a complete Hall magnetic sensor structure.

[0044] Please see Figure 4 As shown, the second embodiment of this application provides a method for fabricating a Hall magnetic sensor, used to fabricate the aforementioned Hall magnetic sensor. The fabrication method may include: Provide semiconductor substrate 9.

[0045] As mentioned above, this application does not have any special requirements for the semiconductor substrate 9. The semiconductor substrate 9 can be any suitable substrate, or it can be a substrate with epitaxy, or the epitaxy can be prepared on the substrate first and then the subsequent steps are performed, so that the Hall magnetic sensor is prepared within the epitaxy. In a specific embodiment, this application uses a simple substrate for preparation.

[0046] An isolation structure can be fabricated on the semiconductor substrate 9. In one embodiment, an isolation process is performed on the region of the semiconductor substrate 9 near the surface to form a third isolation structure 73 and a first isolation structure 71, both of which are ring-shaped. The region within the third isolation structure 73 is used to fabricate the Hall magnetic sensor, and the first isolation structure 71 is located within the third isolation structure 73.

[0047] In one specific embodiment, the isolation process can employ shallow trench isolation (STI). Shallow trench isolation can be used to form shallow trench isolation structures, with the area between these structures serving as an active region for fabricating a Hall magnetic sensor. In this application, while forming the third isolation structure 73, a first isolation structure 71 is also formed within it. The area within the third isolation structure 73 serves as an active region for fabricating a Hall magnetic sensor, while the first isolation structure 71 isolates different specific structures within the Hall magnetic sensor.

[0048] In this embodiment, the fabrication method of this application may further include: implanting P-type and N-type conductive ions into a semiconductor substrate 9 to form an emitter region 1 located within the semiconductor substrate 9, a base region 2 located around and adjacent to the emitter region 1, and a first collector region 31 and a second collector region 32 located around and adjacent to the base region 2. The first collector region 31 and the second collector region 32 are arranged in pairs around the base region 2 at intervals. The emitter region 1, the base region 2, the first collector region 31, and the second collector region 32 together constitute the Hall magnetic sensor as described above.

[0049] That is, the order of P-type and N-type conductive ion implantation in this application is not strictly limited; P-type conductive ion implantation can be performed first, followed by N-type conductive ion implantation, or vice versa. In one specific embodiment, P-type conductive ion implantation is performed first, forming emitter region 1, first collector region 31, and second collector region 32 on both sides of the first isolation structure 71; then N-type conductive ion implantation is performed, forming base region 2 below the first isolation structure 71. The transistor formed in this way is a PNP transistor. Of course, the reverse can also be used to form an NPN transistor. In addition, it should be noted that because base region 2 is completely located below the first isolation structure 71, the intensity of N-type conductive ion implantation needs to be slightly greater.

[0050] In one embodiment, after forming the emitter region 1, a current enhancement region 12 is further formed on the surface of the emitter region 1 near the semiconductor substrate 9. The concentration of conductive ions doped in the current enhancement region 12 is greater than the concentration of conductive ions doped in the emitter region 1. This substantially results in a higher conductive ion concentration in the emitter region 1, leading to a higher amplification factor in the transistor and a larger current being received in the collector region, thereby improving the sensitivity of the Hall magnetic sensor. In a specific embodiment, the step of forming the current enhancement region 12 can be compatible with the step of forming the body region in the MOS process.

[0051] In one embodiment, prior to the isolation process on the region of the semiconductor substrate 9 near the surface, a buried layer 5 is formed within the semiconductor substrate 9. Because the first isolation structure 71 is located above the base region 2, an access port cannot be provided there, so it is led outward through the buried layer 5 below.

[0052] In this embodiment, during the isolation process on the region near the surface of the semiconductor substrate 9, a second isolation structure 72, also in an annular shape, is formed simultaneously. The second isolation structure 72 is located between the third isolation structure 73 and the first isolation structure 71. The second isolation structure 72 is used to form a base extension region 4 on the outer side, thereby isolating the base extension region 4 from the first collector region 31 and the second collector region 32.

[0053] In this embodiment, during P-type and N-type conductive ion implantation of the semiconductor substrate 9, a base extension region 4 is also formed. The base extension region 4 extends from the surface of the semiconductor substrate 9 to its interior, located between the second isolation structure 72 and the third isolation structure 73. The conductive ion type doped in the buried layer 5 is the same as that doped in the base region 2 and the base extension region 4, electrically connecting the base region 2 and the base extension region 4. The base extension region 4 is electrically connected to the base region 2 via the underlying buried layer 5, and since it extends from the surface of the semiconductor substrate 9 to its interior, an access port can be formed on the surface portion of the base extension region 4.

[0054] In this embodiment, the fabrication method further includes forming an emitter access port 18, a first collector access port 38, a second collector access port 39, and a base access port 28 on the surface portions of the emitter region 1, the first collector region 31, the second collector region 32, and the base region extension region 4 located on the semiconductor substrate 9, respectively. This forms the complete structure of the Hall magnetic sensor.

[0055] Compared with the prior art, the technical solution of this application has the following beneficial effects: In this application, the Hall magnetic sensor and its fabrication method utilize a transversely structured transistor. The base region is located around and adjacent to the emitter region, while the first and second collector regions surround and are adjacent to the base region. This results in a very narrow base region, leading to a large amplification factor in the transistor and a large current in the collector region, thus enhancing the sensitivity of the Hall magnetic sensor. The above description is merely a specific embodiment of this application, but the scope of protection is not limited thereto. Any variations or substitutions readily conceived by those skilled in the art within the scope of the technology disclosed in this application should be included within the scope of protection of this application. Therefore, the scope of protection of this application should be determined by the scope of the claims. Furthermore, specific examples have been used in the specification to illustrate the principles and implementation methods of this application. The descriptions of the above embodiments are merely for the purpose of helping to understand the method and core ideas of this application, and the content of this specification should not be construed as a limitation of this application.

Claims

1. A Hall magnetic sensor, characterized in that, The Hall magnetic sensor includes: Semiconductor substrate; The emission region is located within the semiconductor substrate; A base region located around and adjacent to the emission region; A first collector region and a second collector region are located around and adjacent to the base region. The first collector region and the second collector region are arranged in pairs around the base region at intervals. When the Hall magnetic sensor is in a magnetic field, the magnitude of the magnetic field is detected based on the difference in current flowing through the first collector region and the second collector region.

2. The Hall magnetic sensor according to claim 1, characterized in that, The base region is square-shaped, with the first collector region and the second collector region located outside one side of the base region, or the first collector region and the second collector region located at one corner of the base region and respectively located outside the two adjacent sides of that corner; or, the base region is circular-shaped.

3. The Hall magnetic sensor according to claim 1, characterized in that, The first collector area and the second collector area are in multiple pairs, and each of the first collector areas is connected in parallel via a first conductive line, and each of the second collector areas is connected in parallel via a second conductive line.

4. The Hall magnetic sensor according to claim 3, characterized in that, The distance between the first collector area and the second collector area is a first preset distance; the distance between an adjacent pair of first collector areas and second collector areas and another pair of first collector areas and second collector areas is a second preset distance, and the first preset distance is less than the second preset distance.

5. The Hall magnetic sensor according to claim 3, characterized in that, The first collector region and the second collector region are arranged in pairs and evenly around the base region.

6. The Hall magnetic sensor according to claim 1, characterized in that, Along a direction perpendicular to the thickness of the semiconductor substrate, the height of the base region is lower than the height of the emitter region, the first collector region, and the second collector region. The top of the base region has a first isolation structure, and the emitter region is isolated from the first collector region and the second collector region respectively through the first isolation structure.

7. The Hall magnetic sensor according to claim 1, characterized in that, The emitter region, the first collector region, and the second collector region all extend from the surface of the semiconductor substrate into the interior of the semiconductor substrate. The emitter region has a current enhancement region near the surface of the semiconductor substrate, and the concentration of conductive ions doped in the current enhancement region is greater than the concentration of conductive ions doped in the emitter region.

8. The Hall magnetic sensor according to claim 7, characterized in that, The Hall magnetic sensor further includes a base region extension region located outside the first collector region and the second collector region, the base region extension region extending from the surface of the semiconductor substrate to the interior of the semiconductor substrate, and the base region extension region being isolated from the first collector region and the second collector region respectively by a second isolation structure.

9. The Hall magnetic sensor according to claim 8, characterized in that, The Hall magnetic sensor further includes: a buried layer located below the emission region, the base region, the first collector region, the second collector region, and the base region extension region, wherein the type of conductive ions doped in the buried layer is the same as the type of conductive ions doped in the base region and the base region extension region, and the base region and the base region extension region are electrically connected based on the buried layer. The bottom of the transmitting region, the base region, the first collector region, the second collector region, and the base region extension region are in contact with the surface of the buried layer.

10. A method for fabricating a Hall magnetic sensor, characterized in that, The preparation method includes: Provide semiconductor substrates; P-type and N-type conductive ion implantation is performed on the semiconductor substrate to form an emitter region located within the semiconductor substrate, a base region located around the emitter region and adjacent to the emitter region, and a first collector region and a second collector region located around the base region and adjacent to the base region. The first collector region and the second collector region are arranged in pairs around the base region.

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