TVS (Transient Voltage Suppressor) chip integrated array device for lightning protection connector and preparation method

Abstract

The invention belongs to the technical field of electric connector protection, and particularly relates to a TVS (Transient Voltage Suppressor) chip integrated array device for a lightning protection connector and a preparation method, the TVS chip integrated array device comprises an upper end ceramic flat plate, a lead-in electrode, a TVS chip, a lead-out electrode and a lower end ceramic flat plate which are sequentially arranged from top to bottom; an inner hole end electrode is arranged on the inner wall of the inner hole in the upper end ceramic flat plate; an outer end electrode is arranged at the lower end of the lower-end ceramic flat plate; one end of the leading-in electrode is electrically connected with the inner hole end electrode of the upper end ceramic flat plate, and the other end of the leading-in electrode is electrically connected with the input end of the TVS chip; one end of the leading-out electrode is electrically connected with the output end of the TVS chip, and the other end of the leading-out electrode is electrically connected with an outer end electrode arranged at the lower end of the lower end ceramic flat plate. According to the invention, the TVS chip is directly integrated in the upper-end ceramic flat plate and the lower-end ceramic flat plate, so that the number and the installation space of discrete parts in a traditional scheme are reduced, and the problems of low integration level, high packaging cost and low area performance efficiency of a discrete structure of a traditional electric connector are effectively solved.

Description

Technical Field

[0001] This invention belongs to the field of electrical connector protection technology, specifically relating to TVS chip integrated array device and its preparation method for lightning protection connectors. Background Technology

[0002] Lightning protection connectors are key structural components in aerospace, communication equipment, and related systems. They effectively protect electronic devices from complex electromagnetic pulses, ensuring signal transmission stability and reliability, and significantly improving the survivability of these systems in complex electromagnetic pulse environments. Transient voltage suppression (TVS) diodes are widely used in lightning protection connectors due to their fast response, low clamping voltage, and high reliability, providing overvoltage protection. Currently, most lightning protection connectors use discrete TVS diodes added externally to the circuit for protection. However, the manufacturing process of discrete TVS diode-integrated lightning protection connectors requires designing a circuit board, soldering the TVS diodes one by one through holes, and then encapsulating the soldered circuit module in a metal shell. This complex manufacturing process results in a large weight and volume of the encapsulated shell, making it difficult to meet the demands for miniaturized, lightweight, and high-density lightning protection connectors.

[0003] Therefore, there is an urgent need for TVS chip integrated array devices for lightning protection connectors that are compact in structure, have controllable processes, and are highly reliable. Summary of the Invention

[0004] To address the problems in existing technologies, this invention provides an integrated array device of TVS chips for lightning protection connectors and its fabrication method. The method involves fabricating a lower ceramic plate and an upper ceramic plate. An internal lead-out electrode is fabricated at the upper end of the lower ceramic plate, and an lead-in electrode is fabricated at the lower part of the upper ceramic plate. The lead-in and lead-out electrodes are then soldered to both ends of the TVS chip between the two ceramic plates, forming a multi-layered composite structure. This effectively solves the problems of low integration, high packaging cost, and low area performance efficiency inherent in traditional discrete TVS diode integrated lightning protection connectors, while simultaneously improving the reliability and stability of the device.

[0005] To achieve the above objectives, the present invention adopts the following specific technical solution: a TVS chip integrated array device for lightning protection connectors, comprising an upper ceramic plate, an inlet electrode, a TVS chip, an outlet electrode, and a lower ceramic plate arranged sequentially from top to bottom; Both the upper ceramic plate and the lower ceramic plate are provided with several internal holes that penetrate the upper and lower surfaces. The inner wall of the internal hole on the upper ceramic plate is provided with an internal hole end electrode; the lower end of the lower ceramic plate is provided with an external end electrode. An input electrode is disposed on the bottom surface of the upper ceramic plate, and a TVS chip is disposed between the upper and lower ceramic plates; an output electrode is disposed on the upper surface of the lower ceramic plate; one end of the input electrode is electrically connected to the inner hole electrode of the upper ceramic plate, and the other end is electrically connected to the input terminal of the TVS chip; one end of the output electrode is electrically connected to the output terminal of the TVS chip, and the other end is electrically connected to the outer electrode disposed at the lower end of the lower ceramic plate.

[0006] Furthermore, the TVS chip is one or more of a unidirectional TVS chip and a bidirectional TVS chip.

[0007] Furthermore, it also includes an insulating adhesive layer; the insulating adhesive layer fills the gap between the upper ceramic plate, the lower ceramic plate and the TVS chip.

[0008] A method for fabricating a TVS chip integrated array device for lightning protection connectors includes the following steps: Step 1: Prepare the cast film; Step 2: Print electrodes on the cast film and stack them to obtain a ceramic blank with electrode patterns; Step 3: Perform isothermal static pressing on the ceramic blank; Step 4: Fine carving of the ceramic blank; the inner hole is prepared on the ceramic blank, and the ceramic blank is finely carved to the design size to obtain the ceramic perforated plate blank; Step 5: Divide the ceramic perforated plate blank into an upper ceramic perforated plate blank and a lower ceramic perforated plate blank; coat the inner hole end electrode on the inner hole wall of the upper ceramic perforated plate blank, and coat the outer end electrode on the lower end face of the lower ceramic perforated plate blank; perform debinding and sintering treatment on the upper and lower ceramic perforated plate blanks after electrode coating; to obtain an upper ceramic plate and a lower ceramic plate. Step 6: Perform electroplating treatment on the inlet and outlet electrodes; Step 7: Print solder paste in the import electrode welding area and the export electrode welding area; Step 8: Solder the two ends of the TVS chip to the lead-in electrode and the lead-out electrode respectively; Step 9: Electrical performance testing; Step 10: Sealing with insulating adhesive and surface treatment.

[0009] Furthermore, step 1 specifically includes the following steps: Weigh the ceramic powder, solvent, and dispersant by weight percentage, and add them to the ball mill jar for grinding. Plasticizer, binder, and defoamer are added to the ball mill jar, and grinding is continued to obtain cast slurry; The casting paste is coated onto a film belt and dried with hot air to form a ceramic film.

[0010] Furthermore, the cast slurry, by weight percentage, is composed of 15%~25% solvent, 0.01%~0.05% dispersant, 0.01%~0.05% plasticizer, 15%~25% binder, 0.01%~0.05% defoamer, and ceramic powder; The dispersant is 2050 dispersant, the plasticizer is dioctyl o-dicarboxylate, and the defoamer is FP330 defoamer.

[0011] Furthermore, in step 2, electrodes are printed on the surface and inside of the cast film using screen printing technology and then stacked. The mesh size of the printing screen is 200~325. After printing, the film is placed in an oven at 40~50℃ and dried for 2~6 hours.

[0012] Furthermore, the process parameters for the glue removal process in step 5 are as follows: glue removal temperature 150℃~650℃, glue removal holding time 2~3h; sintering temperature 790℃~1400℃, sintering holding time 1~3h.

[0013] Furthermore, in step 8, a reflow soldering process is used for soldering: reflow soldering temperature 230~250℃, holding time 60~120s, heating rate ≤3℃ / s, cooling rate 2~4℃ / s, until the device temperature drops below 100℃.

[0014] Furthermore, the insulating adhesive sealing and surface treatment in step 10 specifically includes: sealing the gaps between the upper ceramic plate and the lower ceramic plate and the TVS chip with insulating adhesive, with a sealing temperature of 120℃~160℃ and a curing time of 0.5~3h; and performing surface treatment on the outer end of the device after sealing with insulating adhesive.

[0015] The present invention can achieve the following technical effects: This invention integrates the TVS chip directly into the interior of the upper and lower ceramic plates, eliminating the need for separate circuit boards and metal packaging shells in traditional solutions. This reduces the number of discrete components and installation space, effectively solving the problems of low integration, high packaging cost, and low area performance efficiency of traditional discrete electrical connector structures.

[0016] The present invention uses an upper ceramic plate and a lower ceramic plate, which are co-sintered with the lead-in electrode and the lead-out electrode to enhance the mechanical strength and electrical stability of the overall array device. The manufacturing process of the upper and lower ceramic plates is simple, the raw materials are widely available, the cost is low and simple to control, the sintering conditions are simple, and the process compatibility is strong. The device welding and packaging processes are simple, and the preparation consistency is good. The prepared TVS chip integrated array device for lightning protection connectors meets the requirements of miniaturization, high-density connectors and high reliability. Attached Figure Description

[0017] Figure 1 An exploded view of the TVS chip integrated array device for lightning protection connectors provided in an embodiment of the present invention; Figure 2 This is a schematic diagram of the structure of the TVS chip integrated array device for lightning protection connectors provided in an embodiment of the present invention; Figure 3 A diagram showing the integration of a discrete TVS chip with a surge protector connector in existing technology; Figure 4 This is a flowchart of the method for fabricating a TVS chip integrated array device for lightning protection connectors disclosed in this invention.

[0018] In the figure: 1. Upper ceramic plate; 2. Inlet electrode; 3. TVS chip; 4. Outlet electrode; 5. Lower ceramic plate; 6. Inner hole electrode; 7. Outer electrode; 8. Insulating adhesive layer; 9. TVS diode. Detailed Implementation

[0019] To make the objectives, technical solutions, and advantages of this invention clearer, the invention will be further described in detail below with reference to the accompanying drawings and specific embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and do not constitute a limitation thereof.

[0020] refer to Figures 1-4 A TVS chip integrated array device for lightning protection connectors includes an upper ceramic plate 1, an inlet electrode 2, a TVS chip 3, an outlet electrode 4, and a lower ceramic plate 5 arranged sequentially from top to bottom. Both the upper ceramic plate 1 and the lower ceramic plate 5 are provided with a number of internal holes that penetrate the upper and lower surfaces. The number of internal holes is 2-158. The porous structure composed of multiple internal holes can be circular, rectangular or irregular in shape. The inner wall of the internal hole on the upper ceramic plate 1 is provided with an internal hole end electrode 6. The lower end of the lower ceramic plate 5 is provided with an external end electrode 7. The input electrode 2 is disposed on the bottom surface of the upper ceramic plate 1, and the TVS chip 3 is disposed between the upper ceramic plate 1 and the lower ceramic plate 5; the output electrode 4 is disposed on the upper surface of the lower ceramic plate 5; one end of the input electrode 2 is electrically connected to the inner hole end electrode 6 of the upper ceramic plate 1, and the other end is electrically connected to the input end of the TVS chip 3; one end of the output electrode 4 is electrically connected to the output end of the TVS chip 3, and the other end is electrically connected to the outer end electrode 7 disposed at the lower end of the lower ceramic plate 5. Several TVS chips 3 are arranged in an array to form an array TVS chip 3. The number of TVS chips 3, inlet electrodes 2, outlet electrodes 4 is the same as the number of inner holes. In use, the pins of the surge protector connector are inserted into the porous structure of the upper ceramic plate 1 and contact the inner electrode 6. The current transmission path is as follows: from the pins of the surge protector connector, it passes sequentially through the inner electrode 6, the lead electrode 2, the TVS chip 3, the lead electrode 4, and finally to the outer electrode 7. When lightning strikes or surge voltage is applied, the surge protector connector transmits the surge signal to the TVS chip 3. When the preset voltage value is reached, the chip conducts to discharge current, thereby limiting the circuit voltage within the protection range and ensuring the stability and reliability of the circuit connection and flow.

[0021] Figure 3 This is a schematic diagram of the existing discrete TVS diode integrated lightning protection connector. It requires soldering multiple TVS diodes 9 one by one to each hole, resulting in low integration and large size. The present invention directly integrates the TVS chip 3 between the upper ceramic plate 1 and the lower ceramic plate 5, directly saving more than 50% of the installation space and solving the problems of low integration and large size of the existing lightning protection connector.

[0022] The lower ceramic plate 5 and the upper ceramic plate 1 are made of one or more of the following materials: barium feldspar-based ceramics, strontium titanate, zinc oxide, and alumina ceramics. The inlet electrode 2 and the outlet electrode 4 are made of one or more of the following materials: molybdenum, tungsten, nickel, silver, palladium, and gold. The outer electrode 7 is made of one or more of the following materials: copper, nickel, silver, and silver-palladium alloy.

[0023] Furthermore, TVS chip 3 is one or more of unidirectional and bidirectional TVS chips with a voltage range of 6V, 8V, 14V, 25V, 31V, 38V, 45V, 60V, and 85V.

[0024] Furthermore, it also includes an insulating adhesive layer 8; the insulating adhesive layer 8 fills the gap between the upper ceramic plate 1, the lower ceramic plate 5 and the TVS chip 3; the material of the insulating adhesive layer 8 is one or more of epoxy resin, phenolic resin, polyimide, unsaturated polyester, glass fiber or inorganic filler modified epoxy resin, glass fiber or inorganic filler modified phenolic resin, glass fiber or inorganic filler modified polyimide, glass fiber or inorganic filler modified unsaturated polyester and silicone rubber.

[0025] This invention also discloses a method for fabricating an integrated TVS chip array device for lightning protection connectors, which includes the following steps: Step 1: Preparation of cast film: The ceramic formulation raw materials are prepared into a casting slurry, and a casting molding process is used to prepare a cast film of the target size for making the upper ceramic plate 1 and the lower ceramic plate 5. The cast slurry, by weight percentage, consists of 15%~25% solvent, 0.01%~0.05% dispersant, 0.01%~0.05% plasticizer, 15%~25% binder, 0.01%~0.05% defoamer, and ceramic powder; The dispersant is 2050 dispersant, the plasticizer is dioctyl o-dicarboxylate, and the defoamer is FP330 defoamer; Step 1 specifically includes the following sub-steps: (1) Weigh the ceramic powder, solvent and dispersant by weight percentage, add them to the ball mill jar, and ball mill at a speed of 150~300 rpm for 2~4 hours; (2) Add the remaining plasticizer, binder and defoamer in the formula to the ball milling jar, and continue ball milling at a speed of 150~300 rpm for 2~4 hours to obtain the cast slurry; (3) The casting slurry is applied to the film belt through the slurry injection port of the casting equipment and dried by hot air at 30~50℃ to form a ceramic film; wherein the casting rate is controlled at 20~40cm / min and the doctor blade height is adjusted to 120~300μm.

[0026] Step 2: Print electrodes on the cast film and stack them to obtain a ceramic blank with electrode patterns; according to the preset pattern of inlet electrode 2 and outlet electrode 4, print electrodes on the cast film prepared in step 1 using screen printing technology and stack them; the mesh number of the printing screen in step 2 is 200~325 mesh, and after printing, place the film in an oven at 40~50℃ to dry for 2~6 hours.

[0027] Step 3: Perform isothermal static pressing on the ceramic blank; specifically, place the ceramic blank obtained in step 2 in an isothermal static pressing device and perform isothermal static pressing under a pressure of 15 MPa to 30 MPa and a temperature of 75°C. Step 4: Use a precision carving machine to perform precision carving on the ceramic blank that has undergone isothermal static pressing, to prepare a preset number and shape of internal holes through the upper and lower surfaces of the ceramic blank, and to carve the ceramic blank to the design size to obtain a ceramic perforated plate blank with electrodes; The parameters used in the above precision carving process are: spindle speed 20,000~60,000 rpm, feed rate 0.01~1 mm / s, and single cutting depth 10~50 µm.

[0028] Step 5: Divide the ceramic perforated plate blank obtained in Step 4 into an upper ceramic perforated plate blank and a lower ceramic perforated plate blank; coat the inner hole end electrode 6 on the inner hole wall of the upper ceramic perforated plate blank, and coat the outer end electrode 7 on the lower end face of the lower ceramic perforated plate blank; perform debinding and sintering treatment on the upper ceramic perforated plate blank and the lower ceramic perforated plate blank after electrode coating in sequence; to obtain the upper ceramic plate 1 and the lower ceramic plate 5.

[0029] In step 5, the glue removal temperature is 150℃~650℃, and the glue removal holding time is 2~3h; the sintering temperature is 790℃~1400℃, and the sintering holding time is 1~3h.

[0030] Step 6: Electroplating is performed on the inlet electrode 2 and the outlet electrode 4. Specifically, the upper ceramic plate 1 and the lower ceramic plate 5 are surface treated, and the inlet electrode 2 and the outlet electrode 4 are electroplated. Step 7: Using screen printing, solder paste is printed on the welding area of ​​the inlet electrode 2 of the upper ceramic plate 1 and the welding area of ​​the outlet electrode 4 of the lower ceramic plate 5.

[0031] Step 8: Position the TVS chip 3 between the lead-in electrode 2 and the lead-out electrode 4, and perform reflow soldering. Solder both ends of the TVS chip 3 to the lead-in electrode 2 and the lead-out electrode 4 respectively. The reflow soldering temperature is 230~250℃, the holding time is 60~120s, the heating rate is ≤3℃ / s, and the cooling rate is 2~4℃ / s, until the device temperature drops below 100℃.

[0032] Step 9: Electrical performance testing; Perform electrical performance testing on the components after welding in step 8; Determine the reliability of the welding.

[0033] Step 10: Insulating Adhesive Sealing and Surface Treatment; Specifically, for the device that has passed the test in Step 9, insulating sealant is filled into the gap between the upper ceramic plate 1, the lower ceramic plate 5, and the TVS chip 3 to perform insulating sealant sealing treatment; after the insulating adhesive layer 8 has cured, the outer surface of the device is surface treated. The sealing temperature for insulating adhesive sealing in Step 10 is 120℃~160℃, and the curing time is 0.5~3h.

[0034] Example 1: The ceramic formula powder at both ends uses 95% alumina. Weigh the ceramic powder, solvent, and dispersant and place them in a ball mill jar. Ball mill for 2-4 hours to ensure uniform mixing. Add the remaining components of the formula to the ball mill jar and continue ball milling under the previously described conditions to obtain a casting slurry. The ceramic slurry is then used to obtain ceramic films through a casting machine. The ceramic films are then laminated, printed, and isothermal pressed to prepare a ceramic perforated plate blank with electrodes. The inner electrode material is selected as Mo / W. Through surface treatment, electrode coating, adhesive removal, and high-temperature sintering, the inner hole electrode 6 of the upper ceramic plate 1 and the outer electrode 7 of the lower ceramic plate are prepared. An 8V unidirectional TVS chip array is used for soldering. Soldering is performed using reflow soldering, and an insulating adhesive potting process is used to seal the gap between the TVS chip 3 and the upper and lower ceramic plates 1 and 5. The relevant test results of the array device prepared in this example are shown in Table 1, and the soldering reliability test results are shown in Table 2.

[0035] Example 2: The difference between this example and Example 1 is that the ceramic material used is 99% alumina. The relevant test results of the array device prepared in this example are shown in Table 1, and the welding reliability test results are shown in Table 2.

[0036] Example 3: The difference between this example and Example 1 is that the selected TVS chip 3 is an 8V and 14V unidirectional chip composite array. The relevant test results of the array device prepared in this example are shown in Table 1.

[0037] Example 4: The difference between this embodiment and Example 1 is that the selected TVS chip array 3 is an 8V bidirectional chip array. The relevant test results of the array device prepared in this example are shown in Table 1.

[0038] Example 5: The difference between this example and Example 1 is that the selected TVS chip array 3 is a bidirectional chip-type composite array of 8V and 14V. The relevant test results of the array device prepared in this example are shown in Table 1.

[0039] Example 6: The difference between this example and Example 1 is that the ceramic material used is barium feldspar, the printed electrode is an Ag-Pd electrode, and the electroplating material is silver. The relevant test results of the array device prepared in this example are shown in Table 1, and the welding reliability test results are shown in Table 2.

[0040] Table 1: Electrical Performance Test Results

[0041]

[0042] Table 2: Welding Reliability Test Results

[0043]

[0044] In the description of this specification, the references to terms such as "one embodiment," "some embodiments," "example," "specific example," or "some examples," etc., indicate that a specific feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of the present invention. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples. Moreover, without contradiction, those skilled in the art can combine and integrate the different embodiments or examples described in this specification, as well as the features of different embodiments or examples.

[0045] Although embodiments of the present invention have been shown and described above, it is to be understood that the above embodiments are exemplary and should not be construed as limiting the present invention. Those skilled in the art can make changes, modifications, substitutions, and variations to the above embodiments within the scope of the present invention.

[0046] The specific embodiments of the present invention described above do not constitute a limitation on the scope of protection of the present invention. Any other corresponding changes and modifications made in accordance with the technical concept of the present invention should be included within the scope of protection of the claims of the present invention.

Claims

1. A TVS chip integrated array device for lightning protection connectors, characterized in that, It includes an upper ceramic plate (1), an inlet electrode (2), a TVS chip (3), an outlet electrode (4), and a lower ceramic plate (5) arranged from top to bottom; Both the upper ceramic plate (1) and the lower ceramic plate (5) are provided with several internal holes that penetrate the upper and lower surfaces. The inner wall of the internal hole on the upper ceramic plate (1) is provided with an inner hole end electrode (6); the lower end of the lower ceramic plate (5) is provided with an outer end electrode (7). An inlet electrode (2) is disposed on the bottom surface of the upper ceramic plate (1), and a TVS chip (3) is disposed between the upper ceramic plate (1) and the lower ceramic plate (5); an outlet electrode (4) is disposed on the upper surface of the lower ceramic plate (5); one end of the inlet electrode (2) is electrically connected to the inner hole end electrode (6) of the upper ceramic plate (1), and the other end is electrically connected to the input end of the TVS chip (3); one end of the outlet electrode (4) is electrically connected to the output end of the TVS chip (3), and the other end is electrically connected to the outer end electrode (7) disposed at the lower end of the lower ceramic plate (5).

2. The TVS chip integrated array device for lightning protection connectors according to claim 1, characterized in that, The TVS chip (3) is one or more of the following: unidirectional TVS chip and bidirectional TVS chip.

3. The TVS chip integrated array device for lightning protection connectors according to claim 2, characterized in that, It also includes an insulating adhesive layer (8); the insulating adhesive layer (8) fills the gap between the upper ceramic plate (1), the lower ceramic plate (5) and the TVS chip (3).

4. A method for fabricating a TVS chip integrated array device for lightning protection connectors, used to fabricate the TVS chip integrated array device for lightning protection connectors as described in any one of claims 1-3, characterized in that, Includes the following steps: Step 1: Prepare the cast film; Step 2: Print electrodes on the cast film and stack them to obtain a ceramic blank with electrode patterns; Step 3: Perform isothermal static pressing on the ceramic blank; Step 4: Fine carving of the ceramic blank; the inner hole is prepared on the ceramic blank, and the ceramic blank is finely carved to the design size to obtain the ceramic perforated plate blank; Step 5: Divide the ceramic perforated plate blank into an upper ceramic perforated plate blank and a lower ceramic perforated plate blank; coat the inner hole end electrode (6) on the inner hole wall of the upper ceramic perforated plate blank, and coat the outer end electrode (7) on the lower end surface of the lower ceramic perforated plate blank; perform debinding and sintering treatment on the upper ceramic perforated plate blank and the lower ceramic perforated plate blank after electrode coating; obtain the upper ceramic plate (1) and the lower ceramic plate (5); Step 6: Electroplating is performed on the inlet electrode (2) and outlet electrode (4); Step 7: Print solder paste in the welding areas of the inlet electrode (2) and the outlet electrode (4); Step 8: Solder the two ends of the TVS chip (3) to the inlet electrode (2) and the outlet electrode (4) respectively; Step 9: Electrical performance testing; Step 10: Sealing with insulating adhesive and surface treatment.

5. The method for fabricating a TVS chip integrated array device for lightning protection connectors according to claim 4, characterized in that, Step 1 specifically includes the following steps: Weigh the ceramic powder, solvent, and dispersant by weight percentage, and add them to the ball mill jar for grinding. Plasticizer, binder, and defoamer are added to the ball mill jar, and grinding is continued to obtain cast slurry; The casting paste is coated onto a film belt and dried with hot air to form a ceramic film.

6. The method for fabricating a TVS chip integrated array device for lightning protection connectors according to claim 5, characterized in that, The cast slurry, by weight percentage, consists of 15%~25% solvent, 0.01%~0.05% dispersant, 0.01%~0.05% plasticizer, 15%~25% binder, 0.01%~0.05% defoamer, and ceramic powder; The dispersant is 2050 dispersant, the plasticizer is dioctyl o-dicarboxylate, and the defoamer is FP330 defoamer.

7. The method for fabricating a TVS chip integrated array device for lightning protection connectors according to claim 4, characterized in that, In step 2, electrodes are printed on the surface and inside of the cast film using screen printing technology and then stacked. The mesh size of the printing screen is 200~325. After printing, the film is placed in an oven at 40~50℃ and dried for 2~6 hours.

8. The method for fabricating a TVS chip integrated array device for lightning protection connectors according to claim 4, characterized in that, The process parameters for the glue removal process in step 5 are as follows: glue removal temperature 150℃~650℃, glue removal holding time 2~3h; sintering temperature 790℃~1400℃, sintering holding time 1~3h.

9. The method for fabricating a TVS chip integrated array device for lightning protection connectors according to claim 4, characterized in that, Step 8 uses reflow soldering: reflow temperature 230~250℃, holding time 60~120s, heating rate ≤3℃ / s, cooling rate 2~4℃ / s, until the device temperature drops below 100℃.

10. The method for fabricating a TVS chip integrated array device for lightning protection connectors according to claim 4, characterized in that, The insulating adhesive sealing and surface treatment in step 10 specifically includes: sealing the gap between the upper ceramic plate (1) and the lower ceramic plate (5) and the TVS chip (3) with insulating adhesive, with a sealing temperature of 120℃~160℃ and a curing time of 0.5~3h; and performing surface treatment on the outer end of the device after sealing with insulating adhesive.

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