Substrate processing apparatus and substrate processing method

Abstract

The present invention relates to a substrate processing apparatus and a substrate processing method, the apparatus comprising: a drying liquid supply unit capable of horizontally reciprocating on a substrate and heating the substrate in a state in which the entire area of the upper surface of the substrate is covered with a rinsing liquid; the drying liquid is supplied through the drying liquid spraying nozzle to replace the washing liquid with the drying liquid, and the heating unit heats the substrate at the lower part, so that the drying liquid is supplied through the drying liquid spraying nozzle to perform replacement in the process of heating the substrate, and the washing liquid is replaced by the drying liquid in the process of heating the replaced substrate. The drying liquid spraying nozzle supplies the drying liquid to move from the central part of the substrate to the peripheral part of the substrate, and the drying liquid spraying nozzle moves from the central part of the upper surface of the substrate to the peripheral part after the replacement of the drying liquid and exposes the dried area on the substrate, so that the inclination phenomenon can be reduced through perfect drying without residual liquid.

Description

Technical Field

[0001] The present invention relates to a substrate processing apparatus and a substrate processing method, and more specifically, to a substrate processing apparatus and a substrate processing method that effectively prevents the leaching of patterns formed on a substrate during the rinsing and drying process of the substrate. Background Technology

[0002] A substrate processing apparatus is an apparatus that uses a processing solution to perform vapor deposition, development, etching, and cleaning on substrates such as semiconductor substrates, display substrates, optical disc substrates, magnetic disk substrates, photomask substrates, ceramic substrates, and solar cell substrates.

[0003] The cleaning process is a process of removing foreign matter or particles present on the substrate. A typical cleaning process includes the following steps: when the substrate is supported on the chuck base (rotating head) and rotates at high speed, rinsing liquid and drying liquid are supplied to the surface or back of the substrate.

[0004] However, when a rinsing solution composed of pure water or carbonated water with a high surface tension remains on the surface of a highly integrated semiconductor substrate with fine patterns, it is possible for adjacent patterns to be pulled towards each other, resulting in substrate defects (hereinafter referred to as "tilting phenomenon," see reference). Figure 1 ).

[0005] Figure 1 Parts (a) and (b) illustrate the principle that adjacent patterns tilt towards each other when there is residual rinsing fluid, and part (c) shows a photograph of the actual substrate tilting phenomenon.

[0006] To address this issue, previous methods have involved supplying the substrate with a drying liquid such as isopropyl alcohol (IPA), which has low surface tension, is easily mixed with the rinsing solution, and has high volatility, to replace the applied rinsing solution. However, for substrates with very fine patterns, this is still insufficient to reduce the tilting phenomenon to the required level.

[0007] Therefore, a technique has recently been developed that involves placing a heating element under the substrate to rapidly evaporate the replaced drying liquid, thereby effectively reducing tilting.

[0008] However, simply heating the lower surface of the substrate and supplying rinsing and drying solutions is still insufficient to satisfactorily reduce tilting in increasingly finer patterns, thus requiring further technological improvements. Summary of the Invention

[0009] The purpose of this invention is to provide a substrate processing apparatus and a substrate processing method that can significantly improve the yield of the substrate by further reducing the tilting phenomenon in adjacent patterns when cleaning the substrate.

[0010] To achieve the aforementioned objective, the substrate processing apparatus of the present invention is characterized by comprising: a substrate holding unit for holding and rotating a substrate; a processing liquid supply unit for supplying processing liquid to the upper surface of the substrate held in the substrate holding unit; a rinsing liquid supply unit for supplying rinsing liquid to the upper surface of the substrate after supplying the processing liquid; a drying liquid supply unit capable of horizontally reciprocating on the substrate, and supplying drying liquid through a drying liquid spray nozzle to replace the rinsing liquid with drying liquid while the entire area of ​​the upper surface of the substrate is covered by the rinsing liquid; and a heating unit for heating the substrate at its lower part.

[0011] The present invention is characterized in that, during the heating of the substrate by the heating unit, a drying liquid is supplied through the drying liquid injection nozzle to perform replacement, and during the heating of the substrate after replacement, the drying liquid injection nozzle supplies the drying liquid and moves from the center of the substrate to the periphery of the substrate.

[0012] The present invention is characterized in that, during the heating of the substrate by the heating unit, a rinsing liquid is supplied by a rinsing liquid supply unit.

[0013] The present invention is characterized in that, after the drying liquid injection nozzle stays at the center of the substrate for a predetermined time and supplies drying liquid to perform replacement, the drying liquid injection nozzle moves from the center of the substrate to the periphery of the substrate.

[0014] The present invention is characterized in that, when the drying liquid injection nozzle is stationary at the center of the substrate, the time for supplying the drying liquid is in the range of 10 seconds to 120 seconds.

[0015] The present invention is characterized in that the temperature of the drying liquid supplied to the substrate is within the temperature range of 50°C or higher and lower than the boiling point of the drying liquid.

[0016] The present invention is characterized in that the velocity of the drying liquid injection nozzle gradually increases from the center of the substrate toward the periphery of the substrate.

[0017] The present invention is characterized in that, when the drying liquid injection nozzle moves from the center of the substrate to the periphery of the substrate, the flow rate of the drying liquid when it reaches the periphery is in the range of 50% to 80% of the flow rate of the drying liquid when it is located at the center of the substrate.

[0018] Furthermore, the substrate processing method of the present invention is characterized by comprising the following steps: supplying a processing liquid to the upper surface of a rotating substrate and processing it; after supplying the processing liquid, processing the upper surface of the substrate with a rinsing liquid; while the entire area of ​​the upper surface of the substrate is covered by the rinsing liquid, supplying a drying liquid through a drying liquid injection nozzle to replace the rinsing liquid with the drying liquid during the heating of the substrate; and during the heating of the substrate, the drying liquid injection nozzle moves from the center of the substrate after replacement to the periphery of the substrate and supplies the drying liquid.

[0019] The present invention is characterized in that, in the step of processing with the rinsing liquid, the rinsing liquid is supplied during the heating of the substrate.

[0020] The present invention is characterized in that, after the drying liquid is supplied to the center of the substrate and remains there for a specified time, the drying liquid injection nozzle moves from the center of the substrate to the periphery of the substrate.

[0021] The present invention is characterized in that, when the drying liquid injection nozzle is stationary at the center of the substrate, the time for supplying the drying liquid is in the range of 10 seconds to 120 seconds.

[0022] The present invention is characterized in that the temperature of the drying liquid supplied to the substrate is within the temperature range of 50°C or higher and lower than the boiling point of the drying liquid.

[0023] The present invention is characterized in that the velocity of the drying liquid injection nozzle gradually increases from the center of the substrate toward the periphery of the substrate.

[0024] The present invention is characterized in that, when the drying liquid injection nozzle moves from the center of the substrate to the periphery of the substrate, the flow rate of the drying liquid when it reaches the periphery is in the range of 50% to 80% of the flow rate of the drying liquid when it is located at the center of the substrate.

[0025] The present invention is characterized in that, in the step of treating the upper surface of the substrate with a rinsing liquid, after the substrate rotation speed is maintained at 200 RPM to 1000 RPM and the rinsing liquid is supplied to rinse the substrate, the rinsing liquid is supplied while the substrate rotation speed is reduced to 100 RPM or less, and in the step of replacing the rinsing liquid with a drying liquid, the substrate rotation speed is maintained at 300 RPM or less and the drying liquid is supplied to the upper surface of the substrate.

[0026] The present invention is characterized in that, in the step of replacing the rinsing liquid with the drying liquid, after placing the drying liquid spray nozzle at the center of the substrate, the rotation speed of the substrate is kept below 100 RPM and the rinsing liquid is replaced, and then the rotation speed of the substrate is increased to greater than 100 RPM and below 300 RPM to complete the replacement.

[0027] According to the present invention as described above, the present invention can have the following effects: since it includes a drying liquid supply unit and a heating unit, the drying liquid supply unit can move horizontally back and forth on the substrate. When the entire area of ​​the upper surface of the substrate is covered by rinsing liquid, the drying liquid is supplied through the drying liquid spray nozzle to replace the rinsing liquid with drying liquid. The heating unit heats the substrate from below. Therefore, the tilting phenomenon can be further reduced when cleaning the substrate.

[0028] Furthermore, according to the present invention, during the heating of the substrate, the drying liquid is supplied through the drying liquid injection nozzle to perform replacement. During the heating of the substrate after replacement, the drying liquid injection nozzle supplies the drying liquid and moves from the center of the substrate to the periphery of the substrate, thereby exposing the dried area from the center of the substrate. Therefore, tilting can be reduced by perfect drying without residual liquid.

[0029] Furthermore, according to the present invention, during the heating of the substrate by the heating unit, the rinsing liquid is supplied to the substrate by the rinsing liquid supply unit. Therefore, it can be smoothly mixed with the drying liquid during the subsequent replacement process, and further rapidly induces the volatile reaction, thereby shortening the process time.

[0030] Furthermore, according to the present invention, after the drying liquid injection nozzle is supplied with drying liquid to fully replace the substrate at the center for a predetermined time, for example, more than 10 seconds, the drying liquid injection nozzle moves from the center of the substrate to the periphery, thereby significantly reducing the number of tilting events.

[0031] Furthermore, according to the present invention, the temperature of the drying liquid supplied to the substrate is within the temperature range of 50°C or higher and lower than the boiling point of the drying liquid, thereby expecting to reduce the tilting phenomenon.

[0032] Furthermore, according to the present invention, the speed of the drying liquid injection nozzle gradually increases from the center of the substrate toward the periphery, thereby significantly reducing process time and increasing productivity.

[0033] Furthermore, according to the present invention, when the drying liquid injection nozzle moves from the center of the substrate to the periphery, the flow rate of the drying liquid discharged when it reaches the periphery is less than the flow rate of the drying liquid discharged when it is located at the center of the substrate, thereby significantly reducing the equipment operating cost by reducing the amount of drying liquid used.

[0034] Furthermore, according to the present invention, in the replacement process based on the drying liquid, after placing the drying liquid spray nozzle at the center of the substrate, after replacing the rinsing liquid by maintaining the rotation speed of the substrate at a low RPM of less than 100 RPM, the method of increasing the rotation speed of the substrate to greater than 100 RPM and less than 300 RPM to complete the replacement minimizes the tilting phenomenon during the replacement of the rinsing liquid formed by the thick water film, while achieving further rapid replacement and drying. Attached Figure Description

[0035] Figure 1 Parts (a) and (b) illustrate the principle of the tilting state caused by adjacent patterns tilting towards each other, and part (c) shows a photograph of the actual substrate tilting state.

[0036] Figure 2 Parts (a) to (h) show, in sequence, the substrate processing apparatus and the substrate processing method of the substrate processing apparatus of the present invention.

[0037] Figure 3 An example diagram showing the radial position on the substrate.

[0038] Figure 4 To compare the quantity and quality of the following scenarios, by tilting the substrate, we can identify the scenarios where the substrate is dried only in the center without heating it through the heating unit located at the bottom of the substrate, where the drying liquid spray nozzle moves from the center to the periphery and dries the substrate without heating it, and where the substrate is heated according to the present invention and the drying liquid spray nozzle moves from the center to the periphery and dries the substrate simultaneously.

[0039] Figure 5 A graph showing the experimental results of how the number of tilting events changes with the time it takes to supply drying liquid to the center of substrate W before the drying liquid spray nozzle moves toward the periphery.

[0040] Figure 6 A graph showing the number of tilts when the temperature of the drying liquid supplied through the drying liquid injection nozzle is 23°C, 50°C, and 70°C is used for comparison.

[0041] Figure 7 To illustrate the graph showing how the number of tilting events varies with the speed at which the drying liquid injection nozzle moves from the center of the substrate toward the periphery, according to the present invention.

[0042] Figure 8 According to the present invention, a graph comparing the changes in the amount of drying liquid discharge when the drying liquid injection nozzle is located at the center of the substrate and the amount of drying liquid discharge when it reaches the periphery is constant, and the amount of drying liquid discharge gradually decreases, when the drying liquid injection nozzle moves from the center of the substrate toward the periphery.

[0043] Figure 9 A graph showing the number of tilts occurring when the substrate is rotated at a lower rotation speed of less than 100 RPM and the drying liquid is supplied after the rinsing liquid is supplied, versus when the substrate is rotated at a higher rotation speed of more than 500 RPM and the drying liquid is supplied.

[0044] Explanation of reference numerals in the attached figures

[0045] 100: Substrate holding unit

[0046] 200: Processing fluid supply unit

[0047] 210: Treatment fluid

[0048] 300: Fluid supply unit

[0049] 310: Flushing fluid

[0050] 400: Drying fluid supply unit

[0051] 410: Drying liquid

[0052] 450: Drying fluid injection nozzle

[0053] 500: Heating unit

[0054] 800: Dry area

[0055] 1000: Substrate processing apparatus

[0056] W: substrate Detailed Implementation

[0057] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

[0058] like Figure 2As shown, the substrate processing apparatus 1000 of the present invention includes: a substrate holding unit 100 for holding and rotating a substrate W; a processing liquid supply unit 200 for supplying processing liquid 210 to the upper surface of the substrate W held in the substrate holding unit 100; a rinsing liquid supply unit 300 for supplying rinsing liquid 310 to the upper surface of the substrate W after supplying the processing liquid; a drying liquid supply unit 400 capable of horizontally reciprocating on the substrate W, and supplying drying liquid 410 through a drying liquid spray nozzle 450 to replace the rinsing liquid 310 with drying liquid 410 while the entire area of ​​the upper surface of the substrate W is covered by the rinsing liquid 310; and a heating unit 500 for heating the substrate W at its lower part.

[0059] The heating unit 500 can use a variety of known heating lamps, such as light-emitting diodes (LEDs) or infrared lamps (IR lamps).

[0060] As described above, the drying liquid supply unit 400 can be moved horizontally from the center of the substrate W toward the periphery by a suitable guide beam or other suitable guide device (not shown). Therefore, during the heating of the substrate W by the heating unit 500, the drying liquid 410 is supplied through the drying liquid injection nozzle 450 to replace the rinsing liquid. Furthermore, during the heating of the substrate W after the replacement is completed, the drying liquid 410 is supplied through the drying liquid injection nozzle 450 and moves from the center of the substrate W toward the periphery, thereby forming a drying area 800 at the center of the substrate W.

[0061] That is, the substrate W is heated by the heating unit 500, and the drying liquid spray nozzle 450 moves from the center of the upper surface of the substrate W, which has been replaced by the drying liquid 410, to the periphery and exposes the drying area 800 on the substrate. Therefore, the tilting phenomenon can be reduced by perfect drying without residual liquid.

[0062] When the rinsing fluid 310 is supplied to the substrate W through the rinsing fluid supply unit 300, the substrate W can also be heated through the heating unit 500.

[0063] That is, before supplying the drying liquid 410 and replacing the rinsing liquid 310, the bottom surface of the substrate W is preheated. As a result, during the subsequent replacement process, it will mix smoothly with the drying liquid 410 and further rapidly cause a volatile reaction, thereby shortening the process time.

[0064] On the other hand, after the drying liquid injection nozzle 450 stays at the center of the substrate W for a predetermined time and supplies the drying liquid 410 and performs a replacement, the drying liquid injection nozzle 450 can move from the center of the substrate W to the periphery.

[0065] The temporary dwell time is a process to completely replace the entire area of ​​the upper surface of the substrate W with the drying liquid 410. Preferably, the dwell time is in the range of 10 to 20 seconds.

[0066] When the dwell time is too short, the replacement effect cannot be fully achieved. On the other hand, when the dwell time is too long, there is no additional effect, only a longer process time.

[0067] Furthermore, preferably, the temperature of the drying liquid 410 supplied to the substrate W is within the temperature range of 50°C or higher and lower than the boiling point of the drying liquid W, thereby improving the effect of reducing tilting.

[0068] Experiments show that the higher the temperature of the drying liquid 410, the less tilting occurs. However, when the drying liquid 410 boils, it will vaporize, which may generate bubbles within it. These bubbles can penetrate the pattern coated by the rinsing liquid 310 and hinder the process of replacing the rinsing liquid 310 between the pattern capacitors with the drying liquid 410 (the drying liquid with lower surface tension replaces the rinsing liquid and performs tilt prevention during drying). This can lead to unintended tilting and other adverse effects, increasing the defect rate.

[0069] Furthermore, preferably, the speed of the drying liquid injection nozzle 450 gradually increases from the center of the substrate W toward the periphery, thereby increasing productivity by shortening the process time.

[0070] Furthermore, preferably, when the drying liquid injection nozzle 450 moves from the center of the substrate W to the periphery, the flow rate of the drying liquid when it reaches the periphery is within the range of 50% to 80% of the flow rate of the drying liquid when it reaches the center of the substrate W, thereby reducing the amount of drying liquid 410 used and thus reducing equipment operating costs.

[0071] The substrate processing method that can be implemented by the substrate processing apparatus 1000 will be described in detail below.

[0072] The substrate processing method of the present invention includes the following steps: supplying a processing liquid to the upper surface of a rotating substrate W and processing it; after supplying the processing liquid, processing the upper surface of the substrate W with a rinsing liquid 310; while the entire area of ​​the upper surface of the substrate is covered by the rinsing liquid, supplying a drying liquid 410 through a drying liquid injection nozzle 450 to replace the rinsing liquid 310 with the drying liquid 410 during the heating of the substrate W; and during the heating of the substrate W, moving the drying liquid injection nozzle 450 from the center of the substrate W after replacement to the periphery of the substrate and supplying the drying liquid 410.

[0073] As described above, during the heating of the substrate W, the drying liquid 410 is supplied through the drying liquid injection nozzle 450 to replace the rinsing liquid 310. During the heating of the substrate W after the replacement is completed, the drying liquid injection nozzle 450 supplies the drying liquid 410 and moves from the center of the substrate W to the periphery to form a drying area 800 that extends from the center.

[0074] That is, during the heating process of the substrate W, on the upper surface of the substrate W which has been replaced by the drying liquid 410, the drying liquid spray nozzle 450 moves from the center to the periphery and exposes the dried area 800 on the substrate W. Therefore, the tilting phenomenon can be reduced by perfect drying without residual liquid.

[0075] When the substrate W is heated, the temperature of the substrate W can be maintained between 75°C and 200°C.

[0076] This is because the heating effect based on the substrate is not sufficient at temperatures below 75°C, and at temperatures above 200°C, the drying liquid 410 moves from the center to the periphery and accumulates heat, which may cause vaporization.

[0077] To prevent this vaporization phenomenon, it is necessary to increase the flow rate and thickness of the drying liquid. In this case, the amount of drying liquid used will increase dramatically, resulting in higher equipment operating costs.

[0078] Figure 4 The diagram shows experimental graphs comparing the quantity and quality of tilting occurrences under three conditions: drying with only drying liquid supplied to the drying section when the substrate W is not heated by the heating unit 500 located at the lower part of the substrate W; drying with the drying liquid spray nozzle 450 moving from the center to the periphery without heating the substrate; and drying with the substrate W heated and the drying liquid spray nozzle 450 moving from the center to the periphery simultaneously. It is known that a drying liquid at 70°C was used in all three conditions. The radial position on the substrate W can be referenced... Figure 3 .

[0079] As shown in the figure, when the substrate W is not heated by the heating unit 500 located at the bottom of the substrate W, and drying is only performed by supplying drying liquid to the center, it can be seen that relatively more tilting occurs throughout the entire area of ​​the substrate W. When the substrate is not heated and the drying liquid spray nozzle 450 moves from the center to the periphery for drying, it can be seen that although the occurrence of tilting is greatly reduced, more tilting still occurs in one peripheral area. From the initial stage of the process (refer to...) Figure 2Starting with part (a), when the substrate W is heated and the drying liquid spray nozzle 450 moves from the center to the periphery to dry it, it can be seen that the occurrence of tilting is greatly reduced.

[0080] In the step of processing with the rinsing fluid 310, the substrate W may also be heated and the rinsing fluid 310 may be supplied.

[0081] Therefore, before supplying the drying liquid 410 and completing the replacement, the rinsing liquid 310 is supplied to the substrate W and the bottom surface of the substrate W is heated. As a result, during the subsequent replacement process, the rinsing liquid 310 and the drying liquid 410 can be smoothly mixed and further rapidly volatile reactions can be initiated, thereby shortening the process time.

[0082] Preferably, before the drying liquid injection nozzle 450 moves from the center of the substrate W to the periphery, the drying liquid 410 is supplied to the center of the substrate W and temporarily stays there for a predetermined time before the drying liquid injection nozzle 450 moves from the center of the substrate W to the periphery.

[0083] Preferably, the process of completely replacing the entire area of ​​the upper surface of the substrate W with the drying liquid 410 is performed in the range of about 10 seconds to 120 seconds.

[0084] When the dwell time is too short, the replacement effect is not fully achieved. On the contrary, when the dwell time is too long, there is no additional effect, but only an increase in the process time.

[0085] Figure 5 Experimental results show that the amount of tilting occurs as the drying liquid is supplied from the center of the substrate W before the drying liquid injection nozzle 450 moves from the center of the substrate W toward the periphery.

[0086] As shown in the figure, it is possible to achieve the effect of fewer tilts occurring as the time increases to 5 seconds, 10 seconds, and 30 seconds.

[0087] However, when the time exceeds 2 minutes, there is not much difference in the number of tilts; instead, only the process time becomes longer. Therefore, it is preferable to determine an upper limit of 2 minutes.

[0088] Furthermore, preferably, the drying liquid 410 supplied to the substrate W is in the range of 50°C or higher and lower than the boiling point of the drying liquid.

[0089] The experiment showed that the higher the temperature of the drying liquid 410, the less the tilting phenomenon occurred. However, when the drying liquid boiled, it caused adverse effects such as deformation of the pattern on the substrate.

[0090] Figure 6A graph comparing the number of tilts occurring when the temperature of the drying liquid 410 supplied through the drying liquid injection nozzle 450 is 23°C, 50°C, and 70°C is disclosed.

[0091] As shown in the figure, when the temperature of the drying liquid 410 is above 50°C, the number of tilting events will decrease.

[0092] Preferably, the speed of the drying liquid spray nozzle 450 gradually increases from the center of the substrate W toward the periphery of the substrate, thereby shortening the process time and increasing productivity.

[0093] For example, Figure 7 Part (a) shows the speed variation of the drying liquid spray nozzle 450 as it moves across the substrate W, and shows examples of the cases where the speed increases linearly and stops on the inside of the substrate when the drying liquid spray nozzle has a specified speed, and the cases where the speed increases linearly and stops on the outside of the substrate.

[0094] and, Figure 7 Part (b) shows according to Figure 7 In part (a), the number of tilting events is based on the change in the speed at which the drying liquid spray nozzle 450 moves from the center of the substrate W toward the periphery. Even if the speed is set to gradually increase from the center toward the periphery, the number of tilting events will not change, thus shortening the process time.

[0095] Specifically, even if the constant moving speed (driving set speed) of the drying liquid spray nozzle 450 increases linearly from the processing end near the periphery to a range of 20% to 30%, the number of tilting events will hardly change.

[0096] Furthermore, preferably, when the drying liquid injection nozzle 450 moves from the center of the substrate W to the periphery, the flow rate of the drying liquid when it reaches the periphery is within the range of 50% to 80% of the flow rate of the drying liquid when it reaches the center of the substrate W, thereby reducing the amount of drying liquid 410 used and thus reducing equipment operating costs.

[0097] For example, Figure 8 According to the present invention, when the drying liquid injection nozzle 450 moves from the center of the substrate W toward the peripheral portion, a graph is disclosed comparing the changes in the amount of tilting when the drying liquid discharge flow rate is constant and when it reaches the peripheral portion, under the condition that the drying liquid discharge flow rate is constant and gradually decreases.

[0098] The diagram shows the flow decreasing in a stepped shape, but any shape is acceptable as long as the structure decreases gradually.

[0099] As shown in the figure, even if the flow rate of the drying liquid 410 supplied to the periphery of the substrate W is reduced compared to the center, the number of pattern tilting events is not different. Therefore, it can be seen that less drying liquid can be used, thereby reducing equipment operating costs.

[0100] On the other hand, firstly, in order to remove various foreign objects, the rotation speed of the substrate W is maintained at a high speed of 200 RPM to 1000 RPM and the rinsing liquid 310 is supplied to uniformly coat a thin water film on the entire upper surface of the substrate W. Then, the rinsing liquid 310 is supplied at a lower state where the rotation speed of the substrate W is reduced to below 100 RPM, thereby reducing the possibility of tilting.

[0101] When the rotational speed of the substrate W is reduced to below 100 RPM, the rinsing liquid 310 forms a thick water film on the entire upper surface of the substrate W.

[0102] Next, the rotational speed of the substrate W is maintained below 300 RPM and a drying liquid is supplied to the upper surface of the substrate W to perform the replacement and drying process.

[0103] Specifically, after placing the drying liquid spray nozzle 450 at the center of the substrate W, the rotation speed of the substrate W is maintained below 100 RPM to displace the rinsing liquid 310. In this case, the centrifugal force is reduced due to the smaller rotation speed, thereby reducing the effect on the surface tension and minimizing the occurrence of tilting.

[0104] That is, on the upper surface of the substrate W on which a relatively thick water film of rinsing liquid 310 is formed, the substrate W is rotated at a low rotational speed of less than 100 RPM and the drying liquid 410 is supplied, thereby achieving displacement from the center to the periphery, and completing the displacement while minimizing the occurrence of tilting. As a result, due to the low rotational speed, the state in which the displacement of the drying liquid 410 is maintained to form a relatively thick water film on the substrate W.

[0105] Next, the rotational speed of the replaced substrate W is maintained at a high level of greater than 100 RPM and less than 300 RPM, and centrifugal force is used to remove the rinsing fluid droplets that cannot escape from the gaps between the capacitors.

[0106] When the rotation speed of the substrate W is high, greater than 100 RPM but less than 300 RPM, the residual rinsing fluid can be completely removed. Conversely, when the rotation speed is too high, the capacitor may collapse and cause tilting.

[0107] As a result, the rotational speed of the substrate W was increased to greater than 100 RPM and less than 300 RPM because the residual rinsing fluid 310 between the patterns was removed without affecting the occurrence of tilting phenomena on the patterns.

[0108] In this state, when the rotational speed of the substrate W is maintained at 100 RPM to 300 RPM, and the drying liquid is supplied through the drying liquid injection nozzle 450 and moved from the center of the substrate W to the periphery, a drying area 800 that gradually expands from the center will be formed.

[0109] The formation of the drying region 800 is further accelerated by heating based on the heating unit 500 disposed on the lower side of the substrate W, thereby shortening the process time.

[0110] Figure 9 A graph showing the number of tilting events after rinsing treatment is presented, comparing the cases where the substrate W is rotated at a lower rotation speed of less than 100 RPM while the drying liquid 410 is supplied, and the cases where the substrate W is rotated at a higher rotation speed of more than 500 RPM while the drying liquid 410 is supplied. Both cases are achieved under the following conditions: the drying liquid 410 at 70°C is supplied to the substrate W and moved from the center to the periphery, and the substrate W is heated.

[0111] As shown in the figure, compared with high-speed rotation, when the substrate W is rotated at a lower rotation speed of less than 100 RPM and the drying liquid 410 is supplied, it can be seen that there is a greater difference in the peripheral area.

[0112] On the other hand, such as Figure 2 As shown in section (h), after the drying liquid spray nozzle 450 completes its movement toward the periphery, the power supply to the heating unit 500 is turned off. During the specified time for the temperature of the substrate to decrease, the substrate holding unit 100 remains stationary after rotation and the substrate W is discharged after stabilization treatment.

[0113] The embodiments of the present invention are merely illustrative examples. Anyone skilled in the art will understand that various modifications and equivalent embodiments can be implemented within the scope of the following claims.

Claims

1. A substrate processing apparatus, characterized in that, include: Substrate holding unit for holding and rotating substrate; The processing liquid supply unit supplies processing liquid to the upper surface of the substrate held in the substrate holding unit; The rinsing fluid supply unit supplies rinsing fluid to the upper surface of the substrate after supplying the processing fluid; The drying liquid supply unit is capable of horizontally reciprocating on the substrate. When the entire upper surface of the substrate is covered by the rinsing liquid, the unit supplies drying liquid through a drying liquid spray nozzle to replace the rinsing liquid with drying liquid. as well as The heating unit heats the substrate at the bottom.

2. The substrate processing apparatus according to claim 1, characterized in that, During the heating process of the substrate by the heating unit, the drying liquid is supplied through the drying liquid injection nozzle to perform replacement. During the heating process of the substrate after replacement, the drying liquid injection nozzle supplies the drying liquid and moves from the center of the substrate to the periphery of the substrate.

3. The substrate processing apparatus according to claim 2, characterized in that, During the heating of the substrate by the heating unit, rinsing fluid is supplied by the rinsing fluid supply unit.

4. The substrate processing apparatus according to claim 2, characterized in that, After the drying liquid injection nozzle stays at the center of the substrate for a predetermined time and supplies drying liquid to perform replacement, the drying liquid injection nozzle moves from the center of the substrate to the periphery of the substrate.

5. The substrate processing apparatus according to claim 4, characterized in that, With the drying liquid injection nozzle positioned at the center of the substrate, the drying liquid is supplied for a period of 10 to 120 seconds.

6. The substrate processing apparatus according to any one of claims 1 to 5, characterized in that, The temperature of the drying liquid supplied to the substrate is above 50°C and below the boiling point of the drying liquid.

7. The substrate processing apparatus according to any one of claims 1 to 5, characterized in that, The speed of the drying liquid injection nozzle gradually increases from the center of the substrate toward the periphery of the substrate.

8. The substrate processing apparatus according to any one of claims 1 to 5, characterized in that, When the drying liquid injection nozzle moves from the center of the substrate to the periphery of the substrate, the flow rate of the drying liquid when it reaches the periphery is in the range of 50% to 80% of the flow rate of the drying liquid when it is located at the center of the substrate.

9. A substrate processing method, characterized in that, Includes the following steps: A processing liquid is supplied to the upper surface of the rotating substrate and the substrate is processed. After the processing liquid is supplied, the upper surface of the substrate is treated with a rinsing liquid; With the entire upper surface of the substrate covered by the rinsing liquid, during the heating process of the substrate, a drying liquid is supplied through a drying liquid injection nozzle to replace the rinsing liquid with the drying liquid. as well as During the heating process of the substrate, the drying liquid injection nozzle moves from the center of the substrate after replacement to the periphery of the substrate and supplies drying liquid.

10. The substrate processing method according to claim 9, characterized in that, In the step of processing with the rinsing fluid, the rinsing fluid is supplied while the substrate is being heated.

11. The substrate processing method according to claim 9, characterized in that, The drying liquid injection nozzle supplies drying liquid to the center of the substrate and stays for a specified time before moving from the center of the substrate to the periphery.

12. The substrate processing method according to claim 11, characterized in that, With the drying liquid injection nozzle positioned at the center of the substrate, the drying liquid is supplied for a period of 10 to 120 seconds.

13. The substrate processing method according to any one of claims 9 to 12, characterized in that, The temperature of the drying liquid supplied to the substrate is above 50°C and below the boiling point of the drying liquid.

14. The substrate processing method according to any one of claims 9 to 12, characterized in that, The speed of the drying liquid injection nozzle gradually increases from the center of the substrate toward the periphery of the substrate.

15. The substrate processing method according to any one of claims 9 to 12, characterized in that, When the drying liquid injection nozzle moves from the center of the substrate to the periphery of the substrate, the flow rate of the drying liquid when it reaches the periphery is in the range of 50% to 80% of the flow rate of the drying liquid when it is located at the center of the substrate.

16. The substrate processing method according to any one of claims 9 to 12, characterized in that, In the step of treating the upper surface of the substrate with the rinsing solution, after maintaining the substrate rotation speed at 200 RPM to 1000 RPM and supplying the rinsing solution to rinse the substrate, the rinsing solution is supplied while the substrate rotation speed is reduced to below 100 RPM. In the step of replacing the rinsing fluid with the drying fluid, the rotational speed of the substrate is maintained below 300 RPM and the drying fluid is supplied to the upper surface of the substrate.

17. The substrate processing method according to claim 16, characterized in that, In the step of replacing the rinsing fluid with the drying fluid, after placing the drying fluid spray nozzle at the center of the substrate, the rotation speed of the substrate is kept below 100 RPM and the rinsing fluid is replaced, and then the rotation speed of the substrate is increased to greater than 100 RPM but less than 300 RPM to complete the replacement.

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