Gas supply apparatus, gas supply control method, and substrate processing apparatus

Abstract

The invention provides a gas supply apparatus, a gas supply control method, and a substrate processing apparatus, which can cut off in an interlocking condition so that gas does not flow into a process cavity. In a substrate processing apparatus according to the present invention, a gas supply apparatus for supplying a gas to a process chamber comprises: a first supply line connected to a gas supply source; an exhaust line branching at a branching point of the first supply line and extending toward an exhaust end; a second supply line branching at the branching point of the first supply line; a flow controller connected to the second supply line; the third supply line is connected between the flow controller and the process cavity; a process shut-off valve disposed on the third supply line; and an exhaust valve disposed on the exhaust line. If the interlocking condition occurs, the process stop valve works to be closed; and if the interlocking condition occurs, the exhaust valve works to be opened.

Description

TECHNICAL FIELD

[0001] The present application relates to a gas supply apparatus for supplying gas to a process chamber, a gas supply control method performed by the gas supply apparatus, and a substrate processing apparatus including the gas supply apparatus. BACKGROUND

[0002] A semiconductor (or display) manufacturing process includes, for example, exposure, evaporation, etching, ion implantation, cleaning, etc. as a process for manufacturing a semiconductor element on a substrate (e.g., a wafer). In order to perform each manufacturing process, a semiconductor manufacturing facility has semiconductor manufacturing equipment for performing each process in a clean room, and performs process treatment for a substrate input to the semiconductor manufacturing equipment.

[0003] In an etching or evaporation process for a substrate, plasma is used. In a plasma processing process, a process gas is supplied to a process chamber in which a substrate is present, and high-frequency power is supplied, so that plasma is formed and the energy of the plasma reacts with a specific substance of the substrate. A plurality of gases are used in the plasma processing process, and a gas supply apparatus for supplying the gases is connected to the process chamber.

[0004] The gas supply apparatus can include a gas supply source, a gas supply pipe, and a flow controller for controlling the flow rate of the gas. When maintenance for a substrate processing apparatus is performed, an interlock situation occurs in which it is necessary to shut off so that gas does not flow to the process chamber. SUMMARY

[0005] The present application provides a gas supply apparatus, a gas supply control method, and a substrate processing apparatus that can be shut off so that gas does not flow to a process chamber in an interlock situation.

[0006] In a substrate processing apparatus according to the present application, a gas supply apparatus for supplying gas to a process chamber includes a first supply line connected to a gas supply source, an exhaust line branched at a branch point of the first supply line and extending to an exhaust end, a second supply line branched at the branch point of the first supply line, a flow controller connected to the second supply line, a third supply line connected between the flow controller and the process chamber, a process shut-off valve disposed in the third supply line, and an exhaust valve disposed in the exhaust line. If an interlock situation occurs, the process shut-off valve operates to be closed, and if the interlock situation occurs, the exhaust valve operates to be opened.

[0007] In an embodiment of the present application, the gas supply apparatus can further include a switch valve disposed in the second supply line, and if the interlock situation occurs, the switch valve operates to be closed.

[0008] In an embodiment of the present application, the process shut-off valve and the exhaust valve can be on-off valves driven by air pressure supplied through a valve controller.

[0009] In an embodiment of the present application, the process shut-off valve can be a normal close type on-off valve set to be closed if air pressure from the valve controller is shut off, and the exhaust valve can be a normal open type on-off valve set to be opened if air pressure from the valve controller is shut off.

[0010] In an embodiment of the present application, if the interlock condition ends, the state of the process shut-off valve and the exhaust valve can be controlled by the valve controller.

[0011] In an embodiment of the present application, a plurality of third supply lines can be disposed between the flow controller and the process chamber, the plurality of third supply lines respectively supplying the gas to different regions of the process chamber, and the process shut-off valve can be respectively disposed in the plurality of third supply lines.

[0012] In an embodiment of the present application, the interlock condition can occur when it is detected that a gas tank containing the gas supply device is opened or gas is leaked.

[0013] In a substrate processing apparatus according to the present application, a gas supply control method in a gas supply device that supplies a gas to a process chamber can include: a step of supplying the gas from the gas supply source to the process chamber; and a step of, if an interlock condition occurs, shutting off the supply of the gas to the process chamber and discharging the gas to the outside, and a step of shutting off the supply of the gas to the process chamber and discharging the gas to the outside, the step of shutting off the supply of the gas to the process chamber and discharging the gas to the outside including: a step of closing a process shut-off valve; and a step of opening an exhaust valve.

[0014] A substrate processing apparatus according to the present application includes: a process chamber forming a processing space of a substrate; an electrostatic chuck supporting the substrate; a gas supply device supplying a gas to the processing space; and a high frequency power source supplying high frequency power for generating plasma to the processing space.

[0015] According to the present application, when an interlock condition occurs, a process shut-off valve between a flow controller and a process chamber is shut off and an exhaust valve disposed on an exhaust line extending from a branch point in front of the flow controller to an exhaust end is opened, so that the gas can not flow into the process chamber. BRIEF DESCRIPTION OF DRAWINGS

[0016] Figure 1The structure of the substrate processing apparatus according to the present invention is shown.

[0017] Figure 2 The structure of the gas supply device according to the comparative example is shown.

[0018] Figure 3 A gas supply device according to the present invention is shown.

[0019] Figure 4 This is a flowchart illustrating a gas supply control method.

[0020] Figure 5 This is a flowchart illustrating an example of the steps of cutting off the gas supply to the process chamber and discharging the gas to the outside.

[0021] (Explanation of reference numerals in the attached diagram)

[0022] 1: Substrate processing device

[0023] 10: Electrostatic Chuck

[0024] 1510: High-frequency power supply

[0025] 1520: Gas supply device

[0026] 310: First Supply Line

[0027] 320: Exhaust line

[0028] 330: Second Supply Line

[0029] 340: Flow controller

[0030] 350: Third Supply Line

[0031] 360: Process shut-off valve

[0032] 370: Exhaust valve

[0033] 380: Switch valve

[0034] 390: Valve controller Detailed Implementation

[0035] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings, so that those skilled in the art to which this invention pertains can readily implement it. The present invention can be implemented in various different ways and is not limited to the embodiments described herein.

[0036] To clearly illustrate the invention, irrelevant parts have been omitted, and the same or similar components are marked with the same reference numerals throughout the specification.

[0037] Furthermore, in multiple embodiments, the same reference numerals are used to describe only representative embodiments of the constituent elements having the same structure, while in other embodiments only structures different from the representative embodiments are described.

[0038] In the specification as a whole, when a part is described as being "connected (or combined)" with other parts, it includes not only the case of "direct connection (or combination)" but also the case of "indirect connection (or combination)" where other components are placed in between. Furthermore, when a part is described as "including" a constituent element, unless otherwise stated otherwise, it means that other constituent elements may be included, rather than excluding them.

[0039] Unless otherwise defined, all terms used herein, including technical or scientific terms, shall have the same meaning as commonly understood by one of ordinary knowledge in the art to which this invention pertains. Terms such as those defined in commonly used dictionaries shall be interpreted as having the same meaning as in the relevant technical context, and shall not be ideally or excessively interpreted as having a formal meaning unless expressly defined in this application.

[0040] As a semiconductor manufacturing apparatus in this embodiment, the substrate processing apparatus can be used for processes performed on substrates such as semiconductor wafers or flat panel display panels. In particular, the substrate processing apparatus 1 in this embodiment is an apparatus that performs etching or vapor deposition processes on the substrate using plasma.

[0041] Figure 1 The structure of the substrate processing apparatus 1 according to the present invention is shown. (Refer to...) Figure 1 The substrate processing apparatus 1 may include an electrostatic chuck 10, a process chamber 1501, a gas supply line 1502, an upper electrode 1503, a gate 1504, a pump 1505, a high-frequency power supply 1510, a gas supply device 1520, and a controller 1550.

[0042] In one embodiment, the electrostatic chuck 10 of the substrate processing apparatus 1 can be a device for fixing the substrate S by electrostatic force. The electrostatic chuck 10 may include a base plate 110, a chuck plate 120, an insulating post 130, a support ring 140, a focusing ring 150, a fixing ring 160, a lifting pin 170, a guide seat 180, and a ring lifting power source 190. An electrostatic electrode 210 and a heater 220 are inserted into the chuck plate 120, and a refrigerant flow path 231 is formed in the base plate.

[0043] In one embodiment, the base plate 110 may be a cylindrical pedestal. The base plate 110 may be made of a metallic material (e.g., aluminum).

[0044] In one embodiment, the chuck plate 120 may be on the base plate 110. The chuck plate 120 may be a plate on which the substrate S is placed. To withstand high-temperature plasma, the chuck plate 120 may comprise a non-conductive material (e.g., ceramic) that exhibits minimal thermal deformation.

[0045] In one embodiment, the insulating post 130 may be located on the outside of the chuck plate 120. More specifically, the insulating post 130 may surround the base plate 110 on the outside of the chuck plate 120. Alternatively, the insulating post 130 may be a post comprising an insulating material.

[0046] A pin hole may be formed in the insulating post 130. The pin hole provides space for the lifting pin 170, which will be described later, to move in the vertical direction. The pin hole may overlap in the vertical direction with at least a portion of the support ring 140 and at least a portion of the focusing ring 150.

[0047] In one embodiment, the support ring 140 may be a ring surrounding the side of the chuck plate 120 on the insulating post 130. More specifically, the support ring 140 may surround the top of the chuck plate 120 on the insulating post 130. Because the support ring 140 may surround the side of the chuck plate 120, the risk of damage to the chuck plate 120 due to plasma can be reduced during the substrate processing process. Furthermore, when the substrate S is placed on the chuck plate 120, a portion of the support ring 140 may overlap with a portion of the edge of the substrate S in the vertical direction.

[0048] The support ring 140 may be a ring that moves vertically via a lifting pin 170. More specifically, the lifting pin 170 may be located below the support ring 140, and at least a portion of the support ring 140 may overlap with a portion of the lifting pin 170 in the vertical direction. The support ring 140 may be driven vertically by an external force transmitted to the support ring 140 via the lifting pin 170.

[0049] In one embodiment, the focusing ring 150 may be a ring that covers a portion of the upper part of the support ring 140. The focusing ring 150 may prevent etching of the support ring 140 by plasma during substrate processing.

[0050] The focusing ring 150 can be a ring that influences the shape of the plasma formed during the substrate processing process. For example, the shape of the plasma formed during the substrate processing process can also change when the shape of the focusing ring 150 or the vertical spacing between the focusing ring 150 and the insulating pillar 130 changes. The focusing ring 150 can be a ring made of materials such as quartz, silicon carbide, silicon dioxide, or alumina.

[0051] The focusing ring 150 may be a ring that moves vertically via a lifting pin 170. More specifically, the lifting pin 170 may be located below the focusing ring 150, and at least a portion of the focusing ring 150 may overlap vertically with a portion of the lifting pin 170. The focusing ring 150 may be driven vertically by an external force transmitted to the focusing ring 150 via the lifting pin 170.

[0052] In one embodiment, the retaining ring 160 may be a portion covering the insulating post 130, forming a ring around the support ring 140 and the focusing ring 150. The retaining ring 160 may be located outside the pin hole of the insulating post 130 and may not overlap with the lifting pin 170 in the vertical direction. Thus, the retaining ring 160 is unaffected by the vertical movement of the lifting pin 170.

[0053] The guide seat 180 may be configured to guide the movement of the lifting pin 170 in the vertical direction. The guide seat 180 may have a guide hole where the lifting pin 170 is located. The guide seat 180 can prevent the drive pin 170 from tilting, thereby allowing the lifting pin 170 to move vertically without tilting.

[0054] In one embodiment, the electrostatic electrode 210 generates electrostatic force in the chuck plate 120. The electrostatic electrode 210 can be electrically connected to the electrostatic chuck power device 1530. By applying a DC voltage from the electrostatic chuck power device 1530, an electrostatic force can be generated between the electrostatic electrode 210 and the substrate S. The substrate S can be securely mounted on the chuck plate 120 by the electrostatic force.

[0055] In one embodiment, heater 220 is configured to release heat for heating the substrate S on chuck plate 120. Heater 220 may be electrically connected to heater power supply 1540, described later. Heater 220 may include multiple heating elements. For example, heater 220 may include at least one of thermoelectric elements, resistance heaters, and induction heaters. The multiple heating elements can be individually controlled to control the local temperature of the substrate S on chuck plate 120.

[0056] In one embodiment, the refrigerant flow path 231 is a flow path formed inside the substrate 110 to allow refrigerant to flow. The refrigerant flow path 231 is formed to cool a plurality of electronic devices, including a substrate on the chuck plate 120 or an electrostatic chuck 10. The refrigerant flow path 231 is connected to the refrigerant supply section 1570 to form a space for the flow of refrigerant supplied by the refrigerant supply section 1570. The refrigerant flow path 231 forms a path for the flow of at least one of water, ethylene glycol, and silicone oil as a refrigerant.

[0057] In one embodiment, the process chamber 1501 can provide an internal space for processing the substrate S, i.e., a processing space. An electrostatic chuck 10 can be located within the processing space of the process chamber 1501. A gas supply line 1502 can be connected to a gas supply device 1520. The gas supply line 1502 can be configured to inject processing gas supplied by the gas supply device 1520 into the interior of the process chamber 1501. The processing gas may include an etching gas for etching the substrate S. Additionally, the processing gas may also include a protective gas for protecting patterns formed on the substrate S.

[0058] In one embodiment, door 1504 can provide a path for the substrate S to move. For example, the substrate S can move out of the process chamber 1501 through door 1504, or it can move into the process chamber 1501 through door 1504. Pump 1505 can be configured to regulate the internal pressure of the process chamber 1501. For example, pump 1505 can inject air into the process chamber 1501 to increase the pressure. Alternatively, pump 1505 can expel air from the process chamber 1501 to decrease the pressure.

[0059] In one embodiment, the high-frequency power supply 1510 may be electrically connected to the upper electrode 1503. The high-frequency power supply 1510 may output high-frequency power suitable for generating plasma and transmit it to the upper electrode 1503. The high-frequency power supply 1510 may be controlled by the controller 1550.

[0060] The electrostatic chuck power device 1530 can be electrically connected to the electrostatic electrode 210 of the electrostatic chuck 10. An electrostatic force can be generated between the electrostatic electrode 210 and the substrate S by applying power, such as a DC voltage, from the electrostatic chuck power device 1530. The substrate S can be securely mounted on the chuck plate 120 of the electrostatic chuck 10 by said electrostatic force.

[0061] In one embodiment, the heater power supply 1540 may be electrically connected to the heater 220 of the electrostatic chuck 10. The heater power supply 1540 may be connected to the controller 1550 and may control the heat generation of the plurality of heating elements including the heater 220.

[0062] In one embodiment, a bias power supply 1560 may be connected to a substrate 110. The bias power supply 1560 may apply high-frequency power to the substrate 110. The substrate 110 may function as an electrode for generating plasma.

[0063] In one embodiment, the refrigerant supply unit 1570 may be connected to the refrigerant flow path 231 formed on the substrate 110 and the controller 1550. The refrigerant supply unit 1570 may control the flow rate and temperature of the refrigerant flowing in the refrigerant flow path 231.

[0064] In one embodiment, the controller 1550 may be configured to control at least one of the high-frequency power supply 1510, the gas supply device 1520, the electrostatic chuck power device 1530, the heater power supply 1540, the bias power supply 1560, and the refrigerant supply unit 1570.

[0065] In one embodiment, the controller 1550 may be configured to control the ring lifting power source 190 of the electrostatic chuck 10. Specifically, the controller 1550 may control the ring lifting power source 190 to drive the support ring 140 and the focusing ring 150.

[0066] Figure 2 The structure of a gas supply device 1520 according to a comparative example is shown. The gas supply device 1520 supplies gas from a gas supply source 1521 to a process chamber 1501. The gas supply device 1520 is disposed inside a gas tank 1522.

[0067] Flow controller 1524 is connected to gas supply source 1521 via input supply line 1523. Flow controller 1524 is connected to process chamber 1501 via output supply line 1525. Process isolation valve (PIV) 1526 is located on output supply line 1525. Process isolation valve 1526 can allow or cut off gas flow between flow controller 1524 and process chamber 1501. The valve system including process isolation valve 1526 is controlled by valve controller 1527. Valve controller 1527 controls the operation of each valve by controlling the air pressure supplied to the valve system including process isolation valve 1526.

[0068] On the other hand, when an interlock occurs, such as the door of the gas chamber 1522 being opened or a gas leak, the power supply to the valve controller 1527 is cut off, thereby cutting off the air pressure to each valve.

[0069] Typically, the process shut-off valve 1526 is a normally open type on / off valve. If the air pressure from the valve controller 1527 is cut off, the process shut-off valve 1526 is in the open state. That is, the process shut-off valve 1526 is a NO (normally open) type valve. In the interlocked condition, in order for the gas remaining in the pipeline to be discharged to the pump 1505 in the process chamber 1501, the process shut-off valve 1526 is provided as a normally open type.

[0070] However, in such Figure 2The system has several problems. First, when the process chamber 1501 is in the open vent state, the inside of the process chamber 1501 is at atmospheric pressure. Therefore, if the process shut-off valve 1526 is opened, the gas cannot be discharged through the pump 1505, and there is a risk of gas leakage to the outside.

[0071] Secondly, if the flow controller 1524 needs to be replaced, opening the gas chamber 1522 will cause an interlock, opening the process shut-off valve 1526 and preventing the isolation of the process chamber 1501. Therefore, even if the process chamber 1501 does not need to be opened for venting, the flow controller 1524 must be vented before it can be replaced. As a result, the process requires venting the chamber, replacing the flow controller 1524, cleaning the chamber, replacing components inside the chamber, confirming leaks, and performing a backup, which reduces the operating efficiency of the substrate processing apparatus 1.

[0072] Figure 3 A gas supply device 1520 according to the present invention is shown. The gas supply device 1520 is configured in... Figure 1 The substrate processing apparatus 1 includes: a process chamber 1501 for forming a processing space of a substrate S; an electrostatic chuck 10 for supporting the substrate S; a gas supply device 1520 for supplying gas to the processing space; and a high-frequency power supply 1510 for providing high-frequency power for generating plasma in the processing space.

[0073] In the substrate processing apparatus 1 according to the present invention, the gas supply device 1520 for supplying gas to the process chamber 1501 includes: a first supply line 310 connected to the gas supply source 1521; an exhaust line 320 branching at the branch point DP of the first supply line 310 and extending to the exhaust end DE; a second supply line 330 branching at the branch point DP of the first supply line 310; a flow controller 340 connected to the second supply line 330; a third supply line 350 connected between the flow controller 340 and the process chamber 1501; a process shut-off valve 360 ​​disposed on the third supply line 350; and an exhaust valve 370 disposed on the exhaust line 320.

[0074] Gas supply source 1521 supplies clean gas for the process treatment of substrate S or process chamber 1501. There can be two or more gas supply sources 1521. Each gas supply source 1521 can supply different types of gas.

[0075] Gas supplied by gas supply source 1521 is supplied to flow controller 340 via first supply line 310. Flow controller 340 regulates the flow rate of gas supplied to process chamber 1501. Flow controller 340 adjusts the gas pressure according to the set flow rate and supplies it to third supply line 350.

[0076] In this invention, a branch point DP is formed on a portion of the first supply line 310. A second supply line 330 is formed between the branch point DP and the flow controller 340, and an exhaust line 320 is formed between the branch point DP and the exhaust end DE. The exhaust line 320 is provided to exhaust internal air to the outside.

[0077] Multiple third supply lines 350 are configured between the flow controller 340 and the process chamber 1501. These third supply lines 350 supply gas to different areas of the process chamber 1501, and each of the third supply lines 350 is equipped with a process shut-off valve 360. For example, ... Figure 3 As shown, when there are three third supply lines 350, each supply line can supply gas to the central region, intermediate region, and edge region of the process chamber 1501 respectively. The flow controller 340 can control the flow rate (pressure) of the gas supplied to the multiple third supply lines 350 respectively.

[0078] According to the present invention, in the event of an interlock, the process shut-off valve 360 ​​operates to close; in the event of an interlock, the exhaust valve 370 operates to open. The gas supply device 1520 may further include a switching valve 380 disposed on the second supply line 330. In the event of an interlock, the switching valve 380 may operate to close. An interlock occurs if the gas tank 305 containing the gas supply device 1520 is detected to be open or if a gas leak is detected. The exhaust valve 370 is disposed inside the gas tank 305. The exhaust valve 370 can discharge gas from the exhaust line 320 inside the gas tank 305 to an exhaust path outside the gas tank 305.

[0079] Process shut-off valve 360 ​​and exhaust valve 370 are on / off valves driven by air pressure supplied by valve controller 390. On / off valve 380 is also an on / off valve driven by air pressure supplied by valve controller 390. Valve controller 390 can control the operation of valves including process shut-off valve 360, exhaust valve 370, and on / off valve 380. Valve controller 390 can adjust the pressure according to the air pressure supplied by valve controller 390. Figure 1 The controller 1550 receives commands and operates accordingly.

[0080] Process shut-off valve 360 ​​is a normally closed type on / off valve configured to close if the air pressure from valve controller 390 is cut off. Exhaust valve 370 is a normally open type on / off valve configured to open if the air pressure from valve controller 390 is cut off. On / off valve 380 is a normally closed type on / off valve configured to close if the air pressure from valve controller 390 is cut off.

[0081] In this invention, if an interlock occurs and the air pressure from the valve controller 390 is cut off, the process shut-off valve 360 ​​is closed and the exhaust valve 370 is opened. At this time, the gas remaining in the pipeline flows through the exhaust valve 370 to the exhaust line 320 and is discharged to the exhaust end DE. The exhaust line 320 can be connected to an exhaust pipe connected to the pump 1505 through the process chamber 1501.

[0082] In the event of an interlock, all valves except exhaust valve 370 are closed, thereby preventing gas leakage, and the gas remaining in the pipeline is discharged to the exhaust end DE through exhaust line 320. According to the present invention, even if the interior of the process chamber 1501 is at atmospheric pressure, gas can still be discharged to the outside through exhaust line 320. Figure 2 In the comparative example, when the interior of the process chamber 1501 is at atmospheric pressure, gas leakage is possible because it cannot be discharged, posing a risk of environmental pollution. However, if configured as the gas supply device 1520 of the present invention, gas can be discharged even when the interior of the process chamber 1501 is at atmospheric pressure, thereby improving environmental safety and stability.

[0083] Furthermore, if an interlock occurs, causing the gas supply to be cut off, the flow controller 340 can be replaced. When replacing the flow controller 340, the operation can be performed with the process shut-off valve 360 ​​closed, even without venting from the process chamber 1501. Because venting of the chamber is not required before operation, the backup time after operation is significantly reduced, thus greatly minimizing equipment downtime. In other words, unlike the comparative example, the replacement of the flow controller 340 can be completed quickly through gas venting, replacement of the flow controller 340, and a shortened backup process.

[0084] Figure 4 This is a flowchart illustrating a gas supply control method. Figure 3 Gas supply control methods can be achieved through Figure 3 The gas supply device 1520 is operated.

[0085] In the substrate processing apparatus 1 according to the present invention, the gas supply device 1520 for supplying gas to the process chamber 1501 includes: a first supply line 310 connected to the gas supply source 1521; an exhaust line 320 branching at the branch point DP of the first supply line 310 and extending to the exhaust end DE; a second supply line 330 branching at the branch point DP of the first supply line 310; a flow controller 340 connected to the second supply line 330; a third supply line 350 connected between the flow controller 340 and the process chamber 1501; a process shut-off valve 360 ​​disposed on the third supply line 350; and an exhaust valve 370 disposed on the exhaust line 320.

[0086] The gas supply control method according to the present invention includes: step S410 of supplying gas from gas supply source 1521 to process chamber 1501; and step S420 of cutting off the gas supply to process chamber 1501 and discharging gas to the outside if an interlock occurs.

[0087] In step S410, gas is supplied to the interior of the process chamber 1501 for the processing of the substrate S. Plasma is generated from the gas by applying high-frequency electricity, and the processing of the substrate S is performed using the plasma. At this time, the gas supplied by the gas supply source 1521 is supplied to the process chamber 1501 at a pressure controlled by the flow controller 340.

[0088] In step S420, if a gas leak or gas tank 305 is detected, an interlock occurs. As the interlock occurs, the gas supply to process chamber 1501 is cut off, and the gas is discharged to the outside.

[0089] Figure 5 This is a flowchart illustrating an example of the steps of cutting off the gas supply to the process chamber and venting the gas to the outside. The steps of cutting off the gas supply to the process chamber 1501 and venting the gas to the outside include: step S510 of closing the process shut-off valve 360; and step S520 of opening the exhaust valve 370. Step S510 of closing the process shut-off valve 360 ​​and step S520 of opening the exhaust valve 370 can be performed simultaneously or at intervals.

[0090] If an interlock occurs and the air pressure from valve controller 390 is cut off, steps S510 and S520 are executed, causing process shut-off valve 360 ​​to close and exhaust valve 370 to open. At this time, gas remaining in the pipeline can flow through exhaust valve 370 to exhaust line 320 and be discharged to exhaust end DE. Exhaust line 320 can be connected to an exhaust line connected to pump 1505 via process chamber 1501. In the event of an interlock, all valves except exhaust valve 370 will be closed to prevent gas leakage, and gas remaining in the pipeline will be discharged to exhaust end DE through exhaust line 320.

[0091] Figure 3 The exhaust valve 370 and the on / off valve 380 can be combined into a three-way valve. Alternatively, the exhaust valve 370 and the on / off valve 380 can both be NO (normal open) type valves.

[0092] This embodiment and the accompanying drawings are merely illustrative of a portion of the technical concept included in this invention. It is obvious to those skilled in the art that variations and specific embodiments that can be readily derived within the scope of the technical concept included in this specification and drawings are all included within the scope of the invention.

[0093] Therefore, the concept of the present invention should not be limited to the illustrated embodiments, not only to the appended claims, but also to any equivalent or modified versions thereof.

Claims

1. A gas supply device for supplying gas to a process chamber in a substrate processing apparatus, wherein, The gas supply device includes: The first supply line is connected to the gas supply source; The exhaust line branches at the branch point of the first supply line and extends toward the exhaust end; The second supply line branches off at the branch point of the first supply line; A flow controller is connected to the second supply line; A third supply line is connected between the flow controller and the process chamber; A process shut-off valve is configured on the third supply line; and An exhaust valve is configured on the exhaust line. If an interlock occurs, the process shut-off valve will operate to close. If the aforementioned interlock occurs, the exhaust valve will operate to open.

2. The gas supply device according to claim 1, wherein, The gas supply device also includes: A switching valve is configured on the second supply line. If the interlock occurs, the switching valve will operate to close.

3. The gas supply device according to claim 1, wherein, The process shut-off valve and the exhaust valve are on / off valves driven by air pressure provided by a valve controller.

4. The gas supply device according to claim 3, wherein, The process shut-off valve is a normally closed on / off valve configured to close if the air pressure from the valve controller is cut off. The exhaust valve is a normally open on / off valve configured to open if the air pressure from the valve controller is cut off.

5. The gas supply device according to claim 4, wherein, If the interlocking condition ends, the state of the process shut-off valve and the exhaust valve is controlled by the valve controller.

6. The gas supply device according to claim 1, wherein, Multiple third supply lines are configured between the flow controller and the process chamber. The plurality of third supply lines supply the gas to different regions of the process chamber. The process shut-off valves are respectively installed on the plurality of third supply lines.

7. The gas supply device according to claim 1, wherein, The interlock occurs if the gas tank containing the gas supply device is detected to be open or if a gas leak is detected.

8. A gas supply control method for a gas supply apparatus, wherein gas is supplied to a process chamber in a substrate processing apparatus, wherein, The gas supply device includes: The first supply line is connected to the gas supply source; The exhaust line branches at the branch point of the first supply line and extends toward the exhaust end; The second supply line branches off at the branch point of the first supply line; A flow controller is connected to the second supply line; A third supply line is connected between the flow controller and the process chamber; A process shut-off valve is configured on the third supply line; and An exhaust valve is configured on the exhaust line. The gas supply control method includes: The steps of supplying the gas from the gas supply source to the process chamber; and If an interlock occurs, the gas supply to the process chamber is cut off and the gas is discharged to the outside. The steps of cutting off the gas supply to the process chamber and discharging the gas to the outside include: The step of closing the process shut-off valve; and The step of opening the exhaust valve.

9. The gas supply control method according to claim 8, wherein, The gas supply device also includes: A switching valve is configured on the second supply line. If the interlock occurs, the switching valve will close.

10. The gas supply control method according to claim 8, wherein, The process shut-off valve and the exhaust valve are on / off valves driven by air pressure provided by a valve controller.

11. The gas supply control method according to claim 10, wherein, The process shut-off valve is a normally closed on / off valve configured to close if the air pressure from the valve controller is cut off. The exhaust valve is a normally open on / off valve configured to open if the air pressure from the valve controller is cut off.

12. The gas supply control method according to claim 11, wherein, If the interlocking condition ends, the state of the process shut-off valve and the exhaust valve is controlled by the valve controller.

13. The gas supply control method according to claim 8, wherein, Multiple third supply lines are configured between the flow controller and the process chamber. The plurality of third supply lines supply the gas to different regions of the process chamber. The process shut-off valves are respectively installed on the plurality of third supply lines.

14. The gas supply control method according to claim 8, wherein, The interlock occurs if the gas tank containing the gas supply device is detected to be open or if a gas leak is detected.

15. A substrate processing apparatus, wherein, The substrate processing apparatus includes: The process cavity forms the processing space for the substrate; An electrostatic chuck supports the substrate; A gas supply device supplies gas to the processing space; and A high-frequency power supply provides high-frequency power to the processing space for generating plasma. The gas supply device includes: The first supply line is connected to the gas supply source; The exhaust line branches at the branch point of the first supply line and extends toward the exhaust end; The second supply line branches off at the branch point of the first supply line; A flow controller is connected to the second supply line; A third supply line is connected between the flow controller and the process chamber; A process shut-off valve is configured on the third supply line; An exhaust valve is disposed on the exhaust line; and The valve controller provides air pressure for the operation of the process shut-off valve and the exhaust valve. The process shut-off valve is a normally closed on / off valve that operates to close if an interlock occurs and the air pressure from the valve controller is cut off. The exhaust valve is a normally open on / off valve that operates to open if an interlock occurs and the air pressure from the valve controller is cut off.

16. The substrate processing apparatus according to claim 15, wherein, The substrate processing apparatus further includes: A switching valve is configured on the second supply line. The switching valve is a normally closed switching valve that operates to close when the air pressure from the valve controller is cut off in the event of the interlocking condition.

17. The substrate processing apparatus according to claim 15, wherein, If the interlocking condition ends, the state of the process shut-off valve and the exhaust valve is controlled by the valve controller.

18. The substrate processing apparatus according to claim 15, wherein, Multiple third supply lines are configured between the flow controller and the process chamber. The plurality of third supply lines supply the gas to different regions of the process chamber. The process shut-off valves are respectively installed on the plurality of third supply lines.

19. The substrate processing apparatus according to claim 15, wherein, The interlock occurs if the gas tank containing the gas supply device is detected to be open or if a gas leak is detected.

20. The substrate processing apparatus according to claim 15, wherein, If the gas supply is cut off due to the aforementioned interlock, the flow controller shall be replaced.

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