Dual-frequency capacitively coupled plasma discharge device for hybrid bonding

Abstract

The invention relates to the technical field of hybrid bonding, in particular to a dual-frequency capacitive coupling plasma discharge device for hybrid bonding, and mainly solves the technical problem that a plasma discharge device is not suitable for large-size wafers. The device comprises a cavity assembly, a source electrode assembly and a bias electrode assembly, the cavity assembly comprises a cavity side wall, a cavity cover plate and a cavity bottom plate, the source electrode assembly comprises an upper insulating plate, a source electrode plate, an upper connector and an air inlet connector, and the bias electrode assembly comprises a lower insulating plate, a bias electrode plate and a lower connector. According to the device, through the structural design, process gas can only be sprayed out of the gas holes through the unique channel, and the process gas can be finally and uniformly diffused into the working cavity by matching with the characteristic that the gas holes are uniformly distributed; and meanwhile, the vacuumizing system can be used for uniformly vacuumizing the working cavity. Through the cooperation of the two aspects, the device can greatly improve the uniformity of the process gas, so that the device can be suitable for processing large-size wafers of 8 inches, 12 inches and the like.

Description

Technical Field

[0001] This invention relates to the field of hybrid bonding technology, and more particularly to a dual-frequency capacitively coupled plasma discharge device for hybrid bonding. Background Technology

[0002] Hybrid bonding is an advanced packaging technology that refers to the direct atomic-level bonding of metal Cu and dielectric layer SiO2 on the same wafer bonding surface. Through plasma activation, room temperature pre-bonding, and low-temperature annealing processes, Cu-Cu on the two wafers forms a metal interconnect, and SiO2-SiO2 forms a dielectric bond, ultimately achieving high-density, low-loss, and high-reliability three-dimensional integrated interconnect. Hybrid bonding equipment generally includes a support platform, plasma discharge device, plasma power supply and feed system, and vacuum and vacuum circuit control system. Among them, the plasma discharge device is the core pre-treatment unit of the hybrid bonding equipment, mainly used to perform atomic-level cleaning, activation, and homogenization modification of Cu and SiO2 on the wafer surface, creating ideal surface conditions for subsequent hybrid bonding.

[0003] Existing plasma discharge devices are generally only suitable for small wafers such as 4-inch and 6-inch wafers, and the uniformity of their process gases cannot meet the process requirements of large wafers such as 8-inch and 12-inch wafers.

[0004] Therefore, there is an urgent need for a plasma discharge device that can be applied to large-size wafers. Summary of the Invention

[0005] To overcome the technical shortcomings of existing plasma discharge devices that are not applicable to large-size wafers such as 8-inch and 12-inch wafers, this invention provides a dual-frequency capacitively coupled plasma discharge device for hybrid bonding.

[0006] The dual-frequency capacitively coupled plasma discharge device for hybrid bonding provided by the present invention includes:

[0007] A cavity assembly includes a cavity sidewall, a cavity cover plate, and a cavity bottom plate. The cavity sidewall is cylindrical. The cavity cover plate and the cavity bottom plate are respectively sealed to the upper and lower openings of the cavity sidewall so that the cavity sidewall, cavity cover plate, and cavity bottom plate form a working cavity. The upper surface of the cavity bottom plate is provided with a plurality of vacuum channels extending radially and evenly distributed circumferentially. A vacuum connection hole is provided at the center of the cavity bottom plate. The radial inner end of the vacuum channel is connected to the vacuum connection hole. The cavity sidewall has an operation window and is equipped with a door valve.

[0008] A source electrode assembly includes an upper insulating plate, a source electrode plate, an upper connector, and an air inlet connector. The upper insulating plate is fixed to the lower surface of the cavity cover plate. A first sealing ring is pressed between the upper surface edge of the upper insulating plate and the cavity cover plate to form a first air gap. A circular first mounting groove is formed on the lower surface of the upper insulating plate. The source electrode plate is adapted and fixed in the first mounting groove. A second sealing ring is pressed between the upper surface edge of the source electrode plate and the upper insulating plate to form a second air gap. The upper connector is installed at the center of the cavity cover plate, and a first connecting hole is provided at the center of the upper insulating plate. A first pin is provided at the center of the upper surface of the source electrode plate. The upper connector penetrates the cavity cover plate and extends into the first connecting hole to connect with the first pin. The air inlet connector is located on the cavity cover plate and communicates with the first air gap. The source electrode plate has a plurality of circumferentially distributed air holes, and the upper ends of the air holes communicate with the second air gap.

[0009] A bias electrode assembly includes a lower insulating plate, a bias electrode plate, and a lower connector. The lower insulating plate is fixed to the upper surface of the cavity bottom plate. A circular second mounting groove is formed on the upper surface of the lower insulating plate. The bias electrode plate is adapted and fixed in the second mounting groove. The lower connector is eccentrically mounted on the cavity bottom plate. The lower insulating plate is provided with a second connecting hole. A second pin is provided on the lower surface of the bias electrode plate. The upper connector penetrates the cavity bottom plate and extends into the second connecting hole to connect with the second pin.

[0010] Optionally, a third sealing ring is pressed between the cavity sidewall and the cavity cover plate and the cavity bottom plate.

[0011] Optionally, a shielding ring is pressed between the cavity sidewall and the cavity cover plate and the cavity bottom plate, and the shielding ring is located outside the third sealing ring.

[0012] Optionally, the cavity sidewall is also provided with an observation window, which is arranged opposite to the operation window.

[0013] Optionally, the cavity bottom plate is further provided with a measuring connector, which is connected to the working cavity and used to connect a vacuum gauge tube.

[0014] Optionally, the source electrode assembly further includes a first insulating ring located on the upper surface of the cavity cover plate, and the first insulating ring, the upper insulating plate, and the source electrode plate are tightened and fixed by fasteners.

[0015] Optionally, a second insulating ring is provided above the first insulating ring, and the second insulating ring and the first insulating ring are tightened and fixed by fasteners.

[0016] Optionally, the vent has at least two rings, and each ring of vents is coaxially arranged with the source electrode plate.

[0017] Optionally, the lower insulating plate includes an insulating base plate and an insulating ring plate, the insulating ring plate being located above the insulating base plate, and the inner hole of the insulating ring plate and the insulating base plate forming the second mounting groove.

[0018] The technical solution provided by this invention has the following advantages compared with the prior art:

[0019] The dual-frequency capacitively coupled plasma discharge device for hybrid bonding provided by this invention features a first gas gap, a first connecting hole, a second gas gap, and a gas hole forming a single channel for the process gas. This ensures that after the process gas enters the first gas gap from the inlet connector, it can only exit through this single channel from the gas hole on the source electrode plate. Combined with the uniform distribution of the gas holes on the source electrode plate, this allows the process gas to diffuse uniformly into the working chamber. Simultaneously, uniformly distributed vacuum connection holes on the chamber bottom plate converge at the vacuum connection hole at the center of the bottom plate, enabling the vacuum system to uniformly evacuate the working chamber, ensuring a high vacuum level and facilitating the diffusion of the process gas. These two aspects work together to significantly improve the uniformity of the process gas, making the device suitable for processing large-size wafers such as 8-inch and 12-inch wafers. Attached Figure Description

[0020] The accompanying drawings, which are incorporated in and form part of this specification, illustrate embodiments consistent with the invention and, together with the description, serve to explain the principles of the invention.

[0021] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, for those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0022] Figure 1 A first-view schematic diagram showing the overall device in an embodiment of the present invention;

[0023] Figure 2 A second-view schematic diagram showing the overall device in an embodiment of the present invention;

[0024] Figure 3 This is a top view showing the overall device in an embodiment of the present invention;

[0025] Figure 4 express Figure 3 Sectional view at point AA;

[0026] Figure 5 This is a schematic diagram of the source electrode plate in an embodiment of the present invention;

[0027] Figure 6This is a schematic diagram of the cavity bottom plate in an embodiment of the present invention.

[0028] In the picture:

[0029] 1. Cavity assembly; 11. Cavity sidewall; 111. Operating window; 112. Observation window; 12. Cavity cover plate; 13. Cavity bottom plate; 131. Vacuum channel; 132. Vacuum connection hole; 133. Measuring connector; 14. Working chamber; 15. Valve; 16. Third sealing ring; 17. Shielding ring; 2. Source electrode assembly; 21. Upper insulating plate; 211. First mounting slot; 212. First connecting hole; 22. Source electrode plate ; 221, First pin; 222, Air hole; 23, Upper connector; 24, Air inlet connector; 251, First sealing ring; 252, First air gap; 261, Second sealing ring; 262, Second air gap; 27, First insulating ring; 28, Second insulating ring; 3, Bias electrode assembly; 31, Lower insulating plate; 311, Second mounting groove; 312, Insulating base plate; 313, Insulating ring plate; 32, Bias electrode plate; 33, Lower connector. Detailed Implementation

[0030] To better understand the above-mentioned objectives, features, and advantages of the present invention, the solutions of the present invention will be further described below. It should be noted that, unless otherwise specified, the embodiments of the present invention and the features thereof can be combined with each other.

[0031] Many specific details are set forth in the following description in order to provide a full understanding of the invention, but the invention may also be practiced in other ways different from those described herein; obviously, the embodiments in the specification are only some embodiments of the invention, and not all embodiments.

[0032] The following is combined with Figures 1 to 6 Specific embodiments of the present invention will be described in detail below.

[0033] This embodiment provides a dual-frequency capacitively coupled plasma discharge device for hybrid bonding, including a cavity assembly 1, a source electrode assembly 2, and a bias electrode assembly 3.

[0034] The cavity assembly 1 includes a cavity sidewall 11, a cavity cover plate 12, and a cavity bottom plate 13. The cavity sidewall 11 is cylindrical. The cavity cover plate 12 and the cavity bottom plate 13 are respectively sealed and connected to the upper and lower openings of the cavity sidewall 11 so that the cavity sidewall 11, the cavity cover plate 12, and the cavity bottom plate 13 form a working cavity 14. The upper surface of the cavity bottom plate 13 is provided with a plurality of vacuum channels 131 that extend radially and are evenly distributed circumferentially. The center of the cavity bottom plate 13 is provided with a vacuum connection hole 132. The radial inner end of the vacuum channel 131 is connected to the vacuum connection hole 132. The cavity sidewall 11 is provided with an operation window 111 and is equipped with a door valve 15.

[0035] Specifically, the connection method between the cavity sidewall 11, the cavity cover plate 12, and the cavity floor plate 13 is not limited. For example, Figure 1 and Figure 2 The cavity sidewall 11 shown is connected and fixed to the cavity cover plate 12 and the cavity bottom plate 13 by multiple fasteners evenly distributed in the circumference.

[0036] like Figure 3 and Figure 4 As shown, a third sealing ring 16 is pressed between the cavity sidewall 11 and the cavity cover plate 12 and the cavity bottom plate 13. The third sealing ring 16 ensures the sealing of the connection.

[0037] like Figure 3 and Figure 4 As shown, shielding rings 17 are pressed between the cavity sidewall 11 and the cavity cover plate 12 and the cavity bottom plate 13, and the shielding rings 17 are located outside the third sealing ring 16. The shielding rings 17 can prevent electron leakage at the joint and signal interference caused by plasma discharge.

[0038] like Figures 2 to 4 As shown, the cavity sidewall 11 is also provided with an observation window 112, which is arranged opposite to the operation window 111. The observation window 112 enables visualization of the working cavity 14, making it easy for operators to monitor the real-time status of the operation.

[0039] like Figures 2 to 4 As shown, the observation window 112 includes a window flange and a window glass. The window flange is connected to the cavity side wall 11 by fasteners and presses the window glass onto the cavity side wall 11. O-rings are pressed between the window glass, the window flange, and the cavity side wall 11 to ensure the sealing performance of the working cavity 14.

[0040] like Figure 6 As shown, during use, the vacuum connection hole 132 connects to the vacuum system, allowing the gas in the working chamber 14 to be drawn out of the chamber after passing through the vacuum channel 131 and the vacuum connection hole 132 in sequence. The uniform distribution characteristics of the vacuum channel 131 and the central distribution characteristics of the vacuum connection hole 132 work together to ensure the uniformity of the vacuum, thereby ensuring the vacuuming effect.

[0041] like Figure 2 As shown, the cavity bottom plate 13 is also provided with a measuring connector 133, which is connected to the working cavity 14 and used to connect to the vacuum gauge tube. During operation, the measuring connector 133 is connected to the vacuum gauge tube, and the vacuum degree of the working cavity 14 is accurately measured through the vacuum gauge tube.

[0042] The source electrode assembly 2 includes an upper insulating plate 21, a source electrode plate 22, an upper connector 23, and an air inlet connector 24. The upper insulating plate 21 is fixed to the lower surface of the cavity cover plate 12. A first sealing ring 251 is pressed between the upper surface edge of the upper insulating plate 21 and the cavity cover plate 12 to form a first air gap 252. A circular first mounting groove 211 is formed on the lower surface of the upper insulating plate 21. The source electrode plate 22 is adapted and fixed in the first mounting groove 211. A second sealing ring 26 is pressed between the upper surface edge of the source electrode plate 22 and the upper insulating plate 21. 1. The upper insulating plate 21, the source electrode plate 22, and the second sealing ring 261 form a second air gap 262. The upper connector 23 is installed at the center of the cavity cover plate 12, and the center of the upper insulating plate 21 is provided with a first connecting hole 212. The center of the upper surface of the source electrode plate 22 is provided with a first pin 221. The upper connector 23 passes through the cavity cover plate 12 and extends into the first connecting hole 212 to connect with the first pin 221. The air inlet connector 24 is provided on the cavity cover plate 12 and communicates with the first air gap 252. The source electrode plate 22 has a plurality of circumferentially distributed air holes 222, and the upper end of the air holes 222 communicates with the second air gap 262.

[0043] In use, connect the upper connector 23 to the medium-high frequency power supply. The high frequency current is conducted to the source electrode plate 22 through the upper connector 23 and the first pin 221 in sequence. Connect the air inlet connector 24 to the air source. The process gas passes through the air inlet connector 24, the first air gap 252, the first connecting hole 212, the second air gap 262 and the air hole 222 in sequence and is discharged into the working chamber 14.

[0044] like Figure 3 and Figure 4 As shown, the source electrode assembly 2 also includes a first insulating ring 27, which is located on the upper surface of the cavity cover plate 12. The first insulating ring 27, the upper insulating plate 21, and the source electrode plate 22 are tightened and fixed by fasteners. Tightening and fixing means that the fasteners pass through the first insulating ring 27 and the upper insulating plate 21 in sequence and are screwed into the source electrode plate 22 so that the upper insulating plate 21 and the source electrode plate 22 are tightened on the cavity cover plate 12 by the thread force, thereby achieving fixation.

[0045] like Figure 3 and Figure 4As shown, a second insulating ring 28 is provided above the first insulating ring 27. The second insulating ring 28 and the first insulating ring 27 are tightened and fixed by fasteners. Similar to the aforementioned tightening and fixing, the fastener passes through the second insulating ring 28 and is screwed into the first insulating ring 27 to tighten the second insulating ring 28 onto the first insulating ring 27 through thread force, thereby achieving fixation. For clarity, the fastener used to tighten the first insulating ring 27, the upper insulating plate 21, and the source electrode plate 22 is defined as the front fastener, and the fastener used to tighten the first insulating ring 27 and the second insulating ring 28 is defined as the rear fastener. Since the fasteners are usually made of metal, the front fastener would conduct electricity to the source electrode plate 22. If the front fastener is exposed, there is a significant safety hazard. Therefore, this embodiment adds a second insulating ring 28, which is positioned above the first insulating ring 27 to cover the front fastener. Simultaneously, a rear fastener, staggered from the front fastener, is used to connect and fix the first insulating ring 27 and the second insulating ring 28, thus effectively eliminating this safety hazard.

[0046] like Figure 5 As shown, the vents 222 have at least two rings, and each ring of vents 222 is coaxially arranged with the source electrode plate 22. The vents 222 are distributed in rings, and the number of rings is reasonably designed according to the air intake efficiency requirements. At the same time, regardless of the number of rings, the characteristic of circumferential uniform distribution can be guaranteed.

[0047] It is easy to understand that the source electrode plate 22 is adapted to the first mounting groove 211, so that the upper insulating plate 21 can cover the periphery of the source electrode plate 22, leaving only a circular surface facing the bias electrode plate 32, thus ensuring the plasma processing effect.

[0048] The bias electrode assembly 3 includes a lower insulating plate 31, a bias electrode plate 32, and a lower connector 33. The lower insulating plate 31 is fixed to the upper surface of the cavity bottom plate 13. A circular second mounting groove 311 is formed on the upper surface of the lower insulating plate 31. The bias electrode plate 32 is adapted and fixed in the second mounting groove 311. The lower connector 33 is eccentrically mounted on the cavity bottom plate 13. The lower insulating plate 31 is provided with a second connecting hole. A second pin is provided on the lower surface of the bias electrode plate 32. The upper connector 23 penetrates the cavity bottom plate 13 and extends into the second connecting hole to connect with the second pin.

[0049] In use, connect the lower connector 33 to the low-frequency power supply. The low-frequency current is conducted to the bias electrode plate 32 through the lower connector 33 and the second pin in sequence.

[0050] like Figure 3 and Figure 4As shown, the lower insulating plate 31 includes an insulating base plate 312 and an insulating ring plate 313. The insulating ring plate 313 is located above the insulating base plate 312, and the inner hole of the insulating ring plate 313 and the insulating base plate 312 form a second mounting groove 311. If the lower insulating plate 31 is an integral structure, it is theoretically feasible, but when the bias electrode plate 32 needs to be removed, there is no feasible operating space for external tools, which makes it difficult to remove the bias electrode plate 32. Therefore, in this embodiment, the lower insulating plate 31 is designed as a spliced ​​structure of the insulating base plate 312 and the insulating ring plate 313. When disassembling the bias electrode plate 32, the insulating replacement plate can be removed first to easily remove the bias electrode plate 32, reducing the difficulty of removing the bias electrode plate 32.

[0051] It is easy to understand that the bias electrode plate 32 is adapted to the second mounting groove 311, so that the lower insulating plate 31 can cover the periphery of the bias electrode plate 32, leaving only a circular surface facing the source electrode plate 22, thus ensuring the plasma processing effect.

[0052] The working principle of the dual-frequency capacitively coupled plasma discharge device for hybrid bonding in this embodiment is as follows:

[0053] S1. An external robotic arm places the wafer onto the bias electrode plate 32 through the operation window 111 and closes the gate valve 15;

[0054] S2. Vacuum the working chamber 14 through the vacuum system at the vacuum connection hole 132, and precisely control the vacuum level of the working chamber 14 to reach the preset value through the vacuum gauge tube at the measuring connector 133.

[0055] S3. The process gas is uniformly dispersed into the working chamber 14 through the gas source at the gas inlet connector 24. The dual-frequency power supply applies a medium-to-high frequency voltage to the source electrode plate 22 and a medium-to-low frequency voltage to the bias electrode plate 32, forming an alternating electric field in capacitive coupling mode. The electric field energy breaks the molecular chemical bonds of the process gas, causing it to ionize into plasma composed of electrons, ions, free radicals, etc.

[0056] S4. The bias electrode plate 32 guides the plasma to bombard the wafer surface in a directional manner, and completes the removal of oxide layer, cleaning of impurities and surface activation through physical bombardment and chemical reaction;

[0057] S5. After the set time is reached, the dual-frequency power supply is turned off, the discharge is stopped, and the residual reaction gas in the working chamber is discharged through the vacuum channel 131 and the vacuum connection hole 132 until the robot arm transfers the wafer.

[0058] The above are merely specific embodiments of the present invention, enabling those skilled in the art to understand or implement the present invention. Although detailed descriptions have been provided with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some or all of the technical features therein; and these modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments, and they should all be covered within the protection scope of the claims.

Claims

1. A dual-frequency capacitively coupled plasma discharge device for hybrid bonding, characterized in that, include: The cavity assembly (1) includes a cavity sidewall (11), a cavity cover plate (12), and a cavity bottom plate (13). The cavity sidewall (11) is cylindrical. The cavity cover plate (12) and the cavity bottom plate (13) are respectively sealed to the upper and lower openings of the cavity sidewall (11) so that the cavity sidewall (11), the cavity cover plate (12), and the cavity bottom plate (13) form a working cavity (14). The upper surface of the cavity bottom plate (13) is provided with a plurality of vacuum channels (131) that extend radially and are evenly distributed circumferentially. The cavity bottom plate (13) is provided with a vacuum connection hole (132) at the center. The radial inner end of the vacuum channel (131) is connected to the vacuum connection hole (132). The cavity sidewall (11) is provided with an operation window (111) and is equipped with a door valve (15). The source electrode assembly (2) includes an upper insulating plate (21), a source electrode plate (22), an upper connector (23), and an air inlet connector (24). The upper insulating plate (21) is fixed to the lower surface of the cavity cover plate (12). A first sealing ring (251) is pressed between the upper surface edge of the upper insulating plate (21) and the cavity cover plate (12) so that the cavity cover plate (12), the upper insulating plate (21), and the first sealing ring (251) form a first air gap (252). A circular first mounting groove (211) is opened on the lower surface of the upper insulating plate (21). The source electrode plate (22) is adapted and fixed in the first mounting groove (211). A second sealing ring (261) is pressed between the upper surface edge of the source electrode plate (22) and the upper insulating plate (21) so that the upper insulating plate (22) forms a first air gap (252). The plate (21), the source electrode plate (22), and the second sealing ring (261) form a second air gap (262). The upper connector (23) is installed at the center of the cavity cover plate (12), and the center of the upper insulating plate (21) is provided with a first connecting hole (212). The center of the upper surface of the source electrode plate (22) is provided with a first pin (221). The upper connector (23) penetrates the cavity cover plate (12) and extends into the first connecting hole (212) to connect with the first pin (221). The air inlet connector (24) is provided on the cavity cover plate (12) and communicates with the first air gap (252). The source electrode plate (22) has a plurality of air holes (222) evenly distributed along the circumference. The upper end of the air holes (222) communicates with the second air gap (262). The bias electrode assembly (3) includes a lower insulating plate (31), a bias electrode plate (32), and a lower connector (33). The lower insulating plate (31) is fixed to the upper surface of the cavity bottom plate (13). A circular second mounting groove (311) is opened on the upper surface of the lower insulating plate (31). The bias electrode plate (32) is adapted and fixed in the second mounting groove (311). The lower connector (33) is eccentrically mounted on the cavity bottom plate (13). The lower insulating plate (31) is provided with a second connecting hole. A second pin is provided on the lower surface of the bias electrode plate (32). The upper connector (23) penetrates the cavity bottom plate (13) and extends into the second connecting hole to connect with the second pin.

2. The dual-frequency capacitively coupled plasma discharge device for hybrid bonding according to claim 1, characterized in that, A third sealing ring (16) is pressed between the cavity sidewall (11), the cavity cover plate (12), and the cavity bottom plate (13).

3. The dual-frequency capacitively coupled plasma discharge device for hybrid bonding according to claim 2, characterized in that, A shielding ring (17) is pressed between the cavity sidewall (11), the cavity cover plate (12), and the cavity bottom plate (13), and the shielding ring (17) is located outside the third sealing ring (16).

4. The dual-frequency capacitively coupled plasma discharge device for hybrid bonding according to any one of claims 1 to 3, characterized in that, The cavity sidewall (11) is also provided with an observation window (112), which is arranged opposite to the operation window (111).

5. The dual-frequency capacitively coupled plasma discharge device for hybrid bonding according to any one of claims 1 to 3, characterized in that, The cavity bottom plate (13) is also provided with a measuring connector (133), which is connected to the working cavity (14) and is used to connect a vacuum gauge tube.

6. The dual-frequency capacitively coupled plasma discharge device for hybrid bonding according to claim 1, characterized in that, The source electrode assembly (2) further includes a first insulating ring (27), which is located on the upper surface of the cavity cover plate (12). The first insulating ring (27), the upper insulating plate (21), and the source electrode plate (22) are tightened and fixed by fasteners.

7. The dual-frequency capacitively coupled plasma discharge device for hybrid bonding according to claim 6, characterized in that, A second insulating ring (28) is provided above the first insulating ring (27), and the second insulating ring (28) and the first insulating ring (27) are tightened and fixed by fasteners.

8. The dual-frequency capacitively coupled plasma discharge device for hybrid bonding according to claim 1, 6, or 7, characterized in that, The vent (222) has at least two rings, and each ring of vent (222) is coaxially arranged with the source electrode plate (22).

9. The dual-frequency capacitively coupled plasma discharge device for hybrid bonding according to claim 1, characterized in that, The lower insulating plate (31) includes an insulating base plate (312) and an insulating ring plate (313). The insulating ring plate (313) is located above the insulating base plate (312), and the inner hole of the insulating ring plate (313) and the insulating base plate (312) form the second mounting groove (311).

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