Semiconductor device

Abstract

This semiconductor device is provided with: at least one semiconductor element having a switching function; a conductive member which is formed of a first raw material and serves as a current path of the semiconductor element switch; and a coating layer that covers at least a portion of the conductive member and is made of a second raw material. The second raw material meets at least one of the following three conditions: (a) the magnetic conductivity is higher than that of the first raw material; (b) a higher electrical resistivity than the first raw material; and (c) the dielectric loss tangent is greater than zero.

Description

[0001] This invention is a divisional application of the invention application with application number 202180024426.9 (international application number PCT / JP2021 / 010866), entitled "Semiconductor Device", filed on March 17, 2021. Technical Field

[0002] This disclosure relates to a semiconductor device having semiconductor elements. Background Technology

[0003] Patent Document 1 discloses a conventional semiconductor device. The semiconductor device described in Patent Document 1 includes: a semiconductor element, island terminals, wires, multiple bonding materials, a connecting plate, and an encapsulating resin. In this semiconductor device, the semiconductor element is, for example, a transistor such as a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor).

[0004] Existing technical documents

[0005] Patent documents

[0006] Patent Document 1: Japanese Patent Application Publication No. 2011-204863 Summary of the Invention

[0007] The problem that the invention aims to solve

[0008] When a semiconductor device is powered on, the main circuit current, which switches through the semiconductor elements, flows through the voltage points and wires. The faster the switching speed, the more likely ringing will occur in the main circuit current. This ringing can cause electromagnetic interference noise that adversely affects the operation of peripheral equipment.

[0009] In view of the above-mentioned problems, the present disclosure aims to provide a semiconductor device capable of suppressing ringing.

[0010] Solution for solving the problem

[0011] The semiconductor device disclosed herein comprises: at least one semiconductor element having a switching function; a conducting member that serves as a current path switched by the semiconductor element and is made of a first material; and a cladding layer that covers at least a portion of the conducting member and is made of a second material. Furthermore, the second material satisfies at least one of the following three conditions: (a) its permeability is higher than that of the first material; (b) its resistivity is higher than that of the first material; and (c) its dielectric loss tangent is greater than 0.

[0012] Preferably, the second raw material is a magnetic conductor with higher permeability and higher resistivity than the first raw material.

[0013] Preferably, the dielectric loss tangent of the second raw material is greater than 0.

[0014] Preferably, the second raw material has a higher magnetic permeability than the first raw material and a dielectric loss tangent greater than 0.

[0015] Preferably, the resistivity of the second raw material is higher than that of the first raw material and the dielectric loss tangent is greater than 0.

[0016] Preferably, the thickness of the coating layer is 1 μm to 5 μm.

[0017] Preferably, the relative magnetic permeability of the second raw material is 10 or higher.

[0018] Preferably, the resistivity of the second raw material is more than twice that of the first raw material.

[0019] Preferably, the dielectric loss tangent of the second raw material is 0.01 or higher.

[0020] Preferably, the semiconductor device of this disclosure further includes a capacitor having a first terminal and a second terminal for electrical connection. Additionally, the at least one semiconductor element is a plurality of semiconductor elements constituting a half-bridge, the half-bridge including at least one set of upper arms and lower arms, the plurality of semiconductor elements including a first semiconductor element in the upper arm and a second semiconductor element in the lower arm. The conducting component includes: a first metal layer connected to the drain electrode of the first semiconductor element; a first power line connected to the first metal layer; and a second power line connected to the source electrode of the second semiconductor element. The first terminal of the capacitor is connected to the first power line, and the second terminal of the capacitor is connected to the second power line. The cladding layer includes a first portion covering the first power line and a second portion covering the second power line.

[0021] Preferably, the first power conductor includes a portion that forms the path between the first semiconductor element and the capacitor, and this portion of the first power conductor is not covered by the first portion.

[0022] Preferably, the second power conductor includes a portion that forms the path between the second semiconductor element and the capacitor, and this portion of the second power conductor is not covered by the second portion.

[0023] Preferably, the coating layer includes a third portion covering the first metal layer.

[0024] Preferably, the conductive component includes: a second metal layer connected to the drain electrode of the second semiconductor element; and a third power wire connected to the second metal layer, wherein the second metal layer and the third power wire are not covered by the cladding layer.

[0025] Preferably, the conductive component includes an intermediate wire connected to the source electrode of the first semiconductor element and the second metal layer, and the intermediate wire is not covered by the cladding layer.

[0026] Preferably, the conductive component includes a first spacer between the first metal layer and the first power wire, and the covering layer includes a fourth portion covering the first spacer.

[0027] Preferably, the conducting component includes a conductor located between the source electrode of the second semiconductor element and the second power wire.

[0028] Preferably, the semiconductor element is any one of SiC MOSFET, SiC IGBT, Si MOSFET, Si IGBT and GaN HEMT.

[0029] The effects of the invention

[0030] According to this disclosure, for semiconductor devices, ringing can be suppressed, buffer circuits can be simplified, and reliability can be improved. Attached Figure Description

[0031] Figure 1 This is a perspective view of the semiconductor device according to the first embodiment.

[0032] Figure 2 This is a perspective view showing the main parts of the semiconductor device according to the first embodiment.

[0033] Figure 3 This is a top view showing the semiconductor device according to the first embodiment.

[0034] Figure 4 Is Figure 3 The diagram shows the sealing resin represented by virtual lines in the top view.

[0035] Figure 5 It is Figure 4 A magnified top view of a portion of the document.

[0036] Figure 6 This is a front view showing the semiconductor device according to the first embodiment.

[0037] Figure 7 This is a bottom view showing the semiconductor device of the first embodiment.

[0038] Figure 8This is a left-side view of the semiconductor device according to the first embodiment.

[0039] Figure 9 This is a right-side view of the semiconductor device according to the first embodiment.

[0040] Figure 10 It is along Figure 4 A cross-sectional view of the X-ray.

[0041] Figure 11 It is along Figure 10 A cross-sectional view along line XI-XI.

[0042] Figure 12 This is a cross-sectional view showing a first modified example of the semiconductor device according to the first embodiment.

[0043] Figure 13 This is a cross-sectional view showing a second modified example of the semiconductor device according to the first embodiment.

[0044] Figure 14 This is a perspective view showing the main parts of the semiconductor device according to the second embodiment.

[0045] Figure 15 This is a top view showing the semiconductor device according to the second embodiment.

[0046] Figure 16 It is along Figure 15 A cross-sectional view of the XVI-XVI line.

[0047] Figure 17 This is a perspective view showing the main parts of the semiconductor device according to the third embodiment.

[0048] Figure 18 This is a top view showing the semiconductor device according to the third embodiment.

[0049] Figure 19 It is along Figure 18 A cross-sectional view of the XIX-XIX line.

[0050] Figure 20 This is a top view showing the semiconductor device according to the fourth embodiment.

[0051] Figure 21 It is along Figure 20 A cross-sectional view of the XXI-XXI line. Detailed Implementation

[0052] Preferred embodiments of the semiconductor device of this disclosure are described below with reference to the accompanying drawings.

[0053] Figures 1 to 11A semiconductor device according to a first embodiment is shown. The semiconductor device A1 of the first embodiment includes: a plurality of semiconductor elements 10, a support substrate 20, a plurality of wires, a plurality of intermediate wires 40, a plurality of lead members 50, a plurality of conductive blocks 60, an encapsulating resin 70, a capacitor 81, and a cladding layer 90. The plurality of wires includes: a first power wire 31, a second power wire 32, a third power wire 33, a pair of gate wires 34A and 34B, a pair of drive source wires 35A and 35B, and a plurality of dummy wires 36. The plurality of conductive blocks 60 includes: a plurality of first blocks 61 and a plurality of second blocks 62.

[0054] Figure 1 This is a three-dimensional diagram representing semiconductor device A1. Figure 2 Is Figure 1 The diagram of sealing resin 70 is omitted from the 3D view. Figure 2 Several lead wire components 50 are omitted. Figure 3 This is a top view of semiconductor device A1. Figure 4 Is Figure 3 The diagram shows the sealing resin 70 represented by a dashed line (double-dotted line) in the top view. Figure 5 It is Figure 4 A magnified partial view. Figure 6 This is the front view of semiconductor device A1. Figure 7 This is a bottom view showing semiconductor device A1. Figure 8 This is a left-side view of semiconductor device A1. Figure 9 This is a right-side view of semiconductor device A1. Figure 10 It is along Figure 4 A cross-sectional view of the X-ray. Figure 11 It is along Figure 10 A cross-sectional view along line XI-XI. Figures 1 to 8 To facilitate understanding, multiple discrete points were depicted in the cladding layer 90.

[0055] In the following description, appropriate reference is made to three mutually orthogonal directions (x-direction, y-direction, z-direction). The z-direction corresponds to the thickness direction of semiconductor device A1. The x-direction corresponds to the top view of semiconductor device A1 (refer to...). Figure 3 and Figure 4 The left and right directions of the semiconductor device A1 are shown. The y-direction corresponds to the top view of the semiconductor device A1 (see reference). Figure 3 and Figure 4 The x-direction is defined as follows: As needed, one side of the x-direction is designated as x1, and the other side as x2. Similarly, one side of the y-direction is designated as y1, and the other side as y2; one side of the z-direction is designated as z1, and the other side as z2.

[0056] Each of the multiple semiconductor elements 10 has the function of switching the main circuit current, and its specific structure is not particularly limited. Specific examples of semiconductor elements 10 include: SiC (silicon carbide) MOSFETs, SiC IGBTs, SiMOSFETs, Si IGBTs (Insulated Gate Bipolar Transistors), and GaN (gallium nitride) HEMTs (High Electron Mobility Transistors). Each semiconductor element 10 is rectangular when viewed from the z-direction (also known as "top view"), but this disclosure is not limited to this.

[0057] like Figure 5 and Figure 10 As shown, each of the plurality of semiconductor elements 10 has a main surface 101 and a back surface 102. In each semiconductor element 10, the main surface 101 and the back surface 102 are separated in the z-direction and face opposite to each other. In this embodiment, the main surface 101 faces the z2 direction and the back surface 102 faces the z1 direction.

[0058] like Figure 5 and Figure 10 As shown, each of the multiple semiconductor elements 10 has: a main electrode 11, a back electrode 12, and an insulating film 13.

[0059] like Figure 5 As shown, the main electrode 11 is disposed on the main surface 101 of the component. Figure 5 As shown, the main surface electrode 11 includes a source electrode 111, a gate electrode 112, and a driving source electrode 113. In this embodiment, the source electrode 111 is an electrode through which source current flows. In this embodiment, the gate electrode 112 is applied with a gate voltage to drive each semiconductor element 10. The driving source electrode 113 is an electrode that serves as a reference potential for the gate voltage. The source electrode 111 is larger than both the gate electrode 112 and the driving source electrode 113. The gate electrode 112 and the driving source electrode 113 are substantially the same size. In this embodiment, although the source electrode 111 is shown as a single region, it can also be divided into multiple regions.

[0060] like Figure 10 As shown, a back electrode 12 is disposed on the back side 102 of the component. The back electrode 12 is formed throughout the entire back side 102 of the component. In this embodiment, the back electrode 12 is an electrode through which the drain current flows, and is also referred to as the drain electrode 12 in the following description.

[0061] like Figure 5As shown, an insulating film 13 is disposed on the main surface 101 of the device. The insulating film 13 has electrical insulation properties. Viewed from above, the insulating film 13 surrounds the main surface electrode 11. The insulating film 13 insulates the source electrode 111 from the gate electrode 112. The insulating film 13 is, for example, constructed by sequentially stacking a SiO2 (silicon dioxide) layer, a Si3N4 (silicon nitride) layer, and a polybenzoxazole layer on the main surface 101 of the device, with the polybenzoxazole layer being the surface layer. In the insulating film 13, a polyimide layer may also be used instead of a polybenzoxazole layer. The structure of the insulating film 13 is not limited to the above.

[0062] The plurality of semiconductor elements 10 includes a plurality of first semiconductor elements 10A and a plurality of second semiconductor elements 10B. In this embodiment, the semiconductor device A1 constitutes a half-bridge switching circuit. The plurality of first semiconductor elements 10A constitute the upper arm circuit of the switching circuit, and the plurality of second semiconductor elements 10B constitute the lower arm circuit of the switching circuit. Figure 4 As shown, semiconductor device A1 includes four first semiconductor elements 10A and four second semiconductor elements 10B. The number of semiconductor elements 10 is not limited to this structure and can be freely set according to the performance requirements of semiconductor device A1.

[0063] like Figure 2 , Figure 4 , Figure 5 and Figure 10 As shown, a plurality of first semiconductor elements 10A are each mounted on a support substrate 20 (conductive substrate 22A). In this embodiment, the plurality of first semiconductor elements 10A are arranged in the y-direction and separated from each other. When each first semiconductor element 10A is mounted on the conductive substrate 22A, the back surface 102 of the element faces the conductive substrate 22A. Each first semiconductor element 10A is electrically bonded to the support substrate 20 (conductive substrate 22A) for example via a conductive element bonding material (not shown). Examples of element bonding materials include solder, sintered silver, and silver paste.

[0064] like Figure 2 , Figure 4 , Figure 5 and Figure 10As shown, a plurality of second semiconductor elements 10B are each mounted on a support substrate 20 (conductive substrate 22B). In this embodiment, the plurality of second semiconductor elements 10B are arranged in the y-direction and separated from each other. When each second semiconductor element 10B is mounted on the conductive substrate 22B, the back surface 102 of the element faces the conductive substrate 22B. Each second semiconductor element 10B is conductively bonded to the support substrate 20 (conductive substrate 22B), for example, by a conductive element bonding material (not shown). In this embodiment, viewed from the x-direction, the plurality of first semiconductor elements 10A and the plurality of second semiconductor elements 10B overlap. However, this may not be the case; that is, viewed from the x-direction, the plurality of first semiconductor elements 10A and the plurality of second semiconductor elements 10B may not overlap.

[0065] The support substrate 20 is a support member that supports a plurality of semiconductor elements 10. The support substrate 20 includes: an insulating substrate 21; two conductive substrates 22A and 22B; a pair of insulating layers 23A and 23B; a pair of gate layers 24A and 24B; a pair of drive source layers 25A and 25B; and a first spacer 26A and a second spacer 26B.

[0066] The insulating substrate 21 is a plate-shaped component with electrical insulation properties. The insulating substrate 21 supports two conductive substrates 22A and 22B. In this embodiment, the insulating substrate 21 is composed of two flat insulating substrates 21A and 21B. The structure of the insulating substrate 21 is not limited to the above; for example, it can be a single flat plate without being divided into two insulating substrates 21A and 21B. The constituent materials of each of the insulating substrates 21A and 21B are, for example, ceramics with excellent thermal conductivity. Examples of such ceramics include AlN (aluminum nitride), SiN (silicon nitride), and Al2O3 (aluminum oxide).

[0067] Viewed from above, insulating substrates 21A and 21B are rectangular. Insulating substrate 21A supports conductive substrate 22A, and insulating substrate 21B supports conductive substrate 22B. Insulating substrates 21A and 21B are separate from each other. In this embodiment, as... Figure 2 , Figure 4 and Figure 10 As shown, insulating substrate 21A and insulating substrate 21B are separated and side by side in the x direction.

[0068] like Figure 10As shown, the insulating substrate 21A has a main surface 211A and a back surface 212A. The main surface 211A and the back surface 212A are separated in the z-direction and face opposite sides. The main surface 211A faces the z2 direction, and the back surface 212A faces the z1 direction. The main surface 211A is opposite to the conductive substrate 22A, and the back surface 212A is exposed from the sealing resin 70. Unlike the example shown, another conductive substrate may also be bonded to the back surface 212A of the insulating substrate 21A. In this case, the back surface of the conductive substrate is exposed from the sealing resin 70.

[0069] like Figure 10 As shown, the insulating substrate 21B has a main surface 211B and a back surface 212B. The main surface 211B and the back surface 212B are separated in the z-direction and face opposite sides. The main surface 211B faces the z2 direction, and the back surface 212B faces the z1 direction. The main surface 211B is opposite to the conductive substrate 22B, and the back surface 212B is exposed from the sealing resin 70. Unlike the example shown, another conductive substrate may also be bonded to the back surface 212B of the insulating substrate 21B. In this case, the back surface of the conductive substrate is exposed from the sealing resin 70.

[0070] The conductive substrates 22A and 22B are each plate-shaped components with conductivity. In this embodiment, as... Figure 10 As shown, each conductive substrate 22A and 22B is a composite substrate comprising a graphite substrate 220m and a copper film 220n formed on both sides of the graphite substrate 220m in the z-direction. The constituent materials of the conductive substrates 22A and 22B are not limited to this; they can also be Cu or a Cu alloy. The surfaces of each conductive substrate 22A and 22B can be covered with a silver plating layer. The conductive substrates 22A and 22B, together with multiple conductive lines (a first power conductive line 31, a second power conductive line 32, a third power conductive line 33, a pair of gate conductive lines 34A and 34B, a pair of drive source conductive lines 35A and 35B, and multiple dummy conductive lines 36), constitute a conductive path to the multiple semiconductor elements 10. The conductive substrates 22A and 22B are separated from each other. Figure 4 and Figure 10 As shown, conductive substrate 22A and conductive substrate 22B are separated and side-by-side in the x-direction. As... Figure 4 As shown, conductive substrates 22A and 22B are rectangular in top view. The z-direction dimension of conductive substrates 22A and 22B is approximately 1.0 to 3.5 mm. In this embodiment, the z-direction dimension of the graphite substrate 220m is approximately 0.5 to 2.5 mm, and the z-direction dimension of each pair of copper films 220n is approximately 0.25 to 0.5 mm. These z-direction dimensions are not limited to those described above. The conductive substrate 22A... Figure 10 The copper film 220n on the upper side of the diagram is an example of the "first metal layer," and the conductive substrate 22B is... Figure 10The copper film 220n on the upper side of the diagram is an example of a "second metal layer". The conductive substrate 22A... Figure 10 The copper film 220n and the conductive substrate 22B on the upper side of the diagram. Figure 10 The copper film 220n on the upper side of the middle image is an example of a "conductive component". It constitutes the conductive substrate 22A. Figure 10 The copper film 220n and the conductive substrate 22B on the upper side of the diagram. Figure 10 The raw material of the copper film 220n on the upper side of the diagram is an example of "first raw material".

[0071] like Figure 10 As shown, the conductive substrate 22A is bonded to the insulating substrate 21A via a substrate bonding material 220A. The substrate bonding material 220A can be, for example, a conductive bonding material such as silver paste, solder, or sintered metal, or it can be an insulating bonding material. Figure 4 and Figure 10 As shown, conductive substrate 22A is located in the x1 direction closer to conductive substrate 22B than conductive substrate 22B. Viewed from the x direction, conductive substrate 22A overlaps with conductive substrate 22B entirely.

[0072] like Figure 10 As shown, the conductive substrate 22A has a main surface 221A and a back surface 222A. The main surface 221A and the back surface 222A are separated in the z-direction and face opposite sides to each other. The main surface 221A faces the z2 direction, and the back surface 222A faces the z1 direction. A plurality of first semiconductor elements 10A are mounted on the main surface 221A. An insulating layer 23A is bonded to the main surface 221A.

[0073] like Figure 10 As shown, the conductive substrate 22B is bonded to the insulating substrate 21B via a substrate bonding material 220B. The substrate bonding material 220B can be a conductive bonding material such as silver paste, solder, or sintered metal, or it can be an insulating bonding material.

[0074] like Figure 10 As shown, the conductive substrate 22B has a main surface 221B and a back surface 222B. The main surface 221B and the back surface 222B are separated in the z-direction and face opposite sides to each other. The main surface 221B faces the z2 direction, and the back surface 222B faces the z1 direction. A plurality of second semiconductor elements 10B are mounted on the main surface 221B. An insulating layer 23B and one end of a plurality of intermediate wires 40 are respectively bonded to the main surface 221B.

[0075] A pair of insulating layers 23A and 23B are electrically insulating, and their constituent materials are, for example, glass epoxy resin or ceramic. Figure 4 As shown, a pair of insulating layers 23A and 23B each have a band-like shape extending in the y-direction. Figure 4 and Figure 10As shown, the insulating layer 23A is bonded to the main surface 221A of the conductive substrate 22A. The insulating layer 23A is located in the x1 direction relative to the plurality of first semiconductor elements 10A. Alternatively, the insulating layer 23A may be positioned in the x2 direction relative to the plurality of first semiconductor elements 10A. Figure 4 and Figure 10 As shown, the insulating layer 23B is bonded to the main surface 221B of the conductive substrate 22B. The insulating layer 23B is located in the x2 direction relative to the plurality of second semiconductor elements 10B. Alternatively, the insulating layer 23B may be positioned in the x1 direction relative to the plurality of second semiconductor elements 10B.

[0076] A pair of gate layers 24A and 24B are conductive, and their constituent materials are, for example, Cu or a Cu alloy. Figure 4 As shown, a pair of gate layers 24A, 24B includes: a ribbon-like portion extending in the y-direction, and a hook-like portion protruding from the ribbon-like portion. The shape of the pair of gate layers 24A, 24B is not limited to... Figure 4 As shown, for example, it can also consist only of a band-like part without the hook-shaped part. For example... Figure 4 and Figure 10 As shown, gate layer 24A is disposed on insulating layer 23A. Gate layer 24A is connected to the gate electrode 112 of each first semiconductor element 10A via lead member 50 (gate lead 51 described later). Figure 4 and Figure 10 As shown, the gate layer 24B is disposed on the insulating layer 23B. The gate layer 24B is connected to the gate electrode 112 of each second semiconductor element 10B via the lead member 50 (gate lead 51 described later).

[0077] A pair of driving source layers 25A and 25B are conductive, and their constituent materials are, for example, Cu or a Cu alloy. Figure 4 As shown, a pair of driving source layers 25A, 25B includes: a ribbon-like portion extending in the y-direction, and a hook-like portion protruding from the ribbon-like portion. The shape of the pair of driving source layers 25A, 25B is not limited to... Figure 4 As shown, for example, it can also consist only of a band-like part without the hook-shaped part. For example... Figure 4 and Figure 10As shown, the driving source layer 25A is disposed together with the gate layer 24A on the insulating layer 23A. Viewed from above, the driving source layer 25A is located on the insulating layer 23A adjacent to, but separated from, the gate layer 24A. In this embodiment, the driving source layer 25A is configured to be closer to the plurality of first semiconductor elements 10A in the x-direction than the gate layer 24A. Therefore, the driving source layer 25A is located on the x2 direction side of the gate layer 24A. The configuration of the gate layer 24A and the driving source layer 25A in the x-direction can also be reversed as described above. The driving source layer 25A is connected to the driving source electrode 113 of each first semiconductor element 10A via the lead member 50 (driving source lead 52). Figure 4 and Figure 10 As shown, the driving source layer 25B is disposed together with the gate layer 24B on the insulating layer 23B. Viewed from above, the driving source layer 25B is located on the insulating layer 23B adjacent to, but separated from, the gate layer 24B. In this embodiment, the driving source layer 25B is configured to be closer to the plurality of second semiconductor elements 10B than the gate layer 24B. Therefore, the driving source layer 25B is located on the x1 direction side of the gate layer 24B. The configuration of the gate layer 24B and the driving source layer 25B in the x direction can also be reversed as described above. The driving source layer 25B is connected to the driving source electrode 113 of each second semiconductor element 10B via the lead member 50 (driving source lead 52).

[0078] The first spacer 26A and the second spacer 26B are conductive, and their constituent materials are, for example, Cu or a Cu alloy. The constituent materials of the first spacer 26A and the second spacer 26B are not limited to those described above; for example, they can be CuMo (copper-molybdenum) composite materials, CIC (Copper-Inver-Copper) composite materials, etc. The constituent materials of the first spacer 26A and the second spacer 26B can be different from each other. The first spacer 26A and the second spacer 26B are examples of "conductive components," and the raw materials constituting the first spacer 26A and the second spacer 26B are examples of "first raw materials."

[0079] like Figure 10 As shown, the first spacer 26A is located between the conductive substrate 22A and the first power wire 31. Figure 4 As shown, viewed from above, the first spacer 26A is a rectangle extending in the y-direction. The first spacer 26A is electrically bonded to the conductive substrate 22A. Viewed from above, the first spacer 26A is located near the edge of the conductive substrate 22A in the x1 direction. The first spacer 26A is provided so that the first power conductor 31 is located in substantially the same position as the second power conductor 32 in the z-direction. Alternatively, the first spacer 26A may be absent, and the first power conductor 31 may be directly bonded to the conductive substrate 22A. The shape of the first spacer 26A is not particularly limited.

[0080] like Figure 10 As shown, the second spacer 26B is located between the conductive substrate 22B and the third power wire 33. (As indicated...) Figure 4 As shown, viewed from above, the second spacer 26B is a rectangle extending in the y-direction. The second spacer 26B is electrically bonded to the conductive substrate 22B. Viewed from above, the second spacer 26B is located near the edge of the conductive substrate 22B in the x2 direction. The second spacer 26B is provided so that the third power conductor 33 is located in substantially the same position as the second power conductor 32 in the z-direction. Alternatively, the second spacer 26B may be absent, and the third power conductor 33 may be directly bonded to the conductive substrate 22B. The shape of the second spacer 26B is not particularly limited.

[0081] Each of the multiple wires (first power wire 31, second power wire 32, third power wire 33, a pair of gate wires 34A and 34B, a pair of drive source wires 35A and 35B, and multiple dummy wires 36) includes a portion located inside the encapsulating resin 70 and a portion located outside the encapsulating resin 70. That is, each wire includes a portion covered by the encapsulating resin 70 and a portion exposed from the encapsulating resin 70. Each wire is used when mounting the semiconductor device A1 onto a circuit board of an electronic device or the like.

[0082] The first power conductor 31 and the second power conductor 32 are each made of metal plates. The metal plates are made of Cu or Cu alloys. The materials of the first power conductor 31 and the second power conductor 32 are not limited to these; for example, they could also be made of aluminum. In this embodiment, both the first power conductor 31 and the second power conductor 32 have a z-direction dimension of approximately 0.8 mm, but this disclosure is not limited to this. Figures 1-4 and Figure 7 As shown, both the first power wire 31 and the second power wire 32 are located in the semiconductor device A1 in the x1 direction. A power supply voltage is applied between the first power wire 31 and the second power wire 32, for example. The first power wire 31 is the positive terminal (P terminal), and the second power wire 32 is the negative terminal (N terminal). The first power wire 31 and the second power wire 32 are separate from each other. The second power wire 32 is separate from the conductive substrate 22A. The first power wire 31 and the second power wire 32 are examples of "conductive components," and the raw materials constituting the first power wire 31 and the second power wire 32 are examples of "first raw materials."

[0083] like Figure 4 As shown, the first power wire 31 has a pad portion 311 and a terminal portion 312.

[0084] The solder pad 311 is the portion of the first power conductor 31 covered by the sealing resin 70. The solder pad 311 is electrically connected to the conductive substrate 22A via the first spacer 26A. Figure 2 , Figure 4 and Figure 10 As shown, the solder pad 311 is electrically connected to the first spacer 26A. There are no limitations on the method of electrical connection; for example, it can be laser bonding, bonding using a conductive bonding material, etc.

[0085] Terminal portion 312 is the portion of the first power wire 31 exposed from the sealing resin 70. For example... Figure 3 , Figure 4 , Figure 6 , Figure 7 and Figure 10 As shown, the terminal portion 312 extends from the sealing resin 70 in the x1 direction.

[0086] like Figure 4 As shown, the second power wire 32 has a pad portion 321 and a terminal portion 322.

[0087] The solder pad portion 321 is the portion of the second power conductor 32 covered by the sealing resin 70. The solder pad portion 321 includes: a connecting portion 321a, a plurality of extension portions 321b, and a connecting portion 321c.

[0088] The connecting portion 321a is in the shape of a ribbon extending in the y direction. The connecting portion 321a connects multiple extension portions 321b.

[0089] Each of the multiple extensions 321b is a ribbon-like structure extending from the connecting portion 321a in the x2 direction. In this embodiment, each extension 321b extends from the connecting portion 321a in the x-direction until it overlaps with each of the second semiconductor elements 10B when viewed from above. When viewed from above, each extension 321b extends transversely from the conductive substrate 22A to the conductive substrate 22B. When viewed from above, the front end portion of each extension 321b overlaps with the second block 62. When viewed from above, the multiple extensions 321b are arranged in the y-direction and separated from each other. Each extension 321b is connected to the source electrode 111 (source electrode) of the second semiconductor element 10B via multiple conductive blocks 60. Figure 4 and Figure 10 As shown, the front end portion of each extension 321b is conductively joined to the second block 62. The method of conductive joining is not limited; for example, it can be laser joining, joining using a conductive joining material, etc.

[0090] The connecting portion 321c is the part that connects the connecting portion 321a and the terminal portion 322. In this embodiment, as... Figure 4 As shown, viewed from above, the connecting portion 321c extends from the end edge of the connecting portion 321a in the y2 direction and x1 direction towards the x1 direction.

[0091] Terminal portion 322 is the portion of the second power wire 32 exposed from the sealing resin 70. For example... Figure 1 , Figure 3 , Figure 4 and Figure 7 As shown, the terminal portion 322 extends from the sealing resin 70 in the x1 direction. The terminal portion 322 is rectangular in plan view. Figure 3 , Figure 4 and Figure 7 As shown, viewed from above, terminal portion 322 is located on the y2 direction side of terminal portion 312 of the first power conductor 31. In this embodiment, the shape of terminal portion 322 is the same as the shape of terminal portion 312, but this disclosure is not limited thereto.

[0092] The third power conductor 33 is a metal plate. The material of this metal plate is, for example, Cu or a Cu alloy. However, the material of the third power conductor 33 is not limited to this; for example, it could also be aluminum. Figures 1-4 , Figure 6 , Figure 7 and Figure 10 As shown, the third power conductor 33 is located near the x2 direction in the semiconductor device A1. Alternating current (voltage) that has been converted by multiple semiconductor elements 10 is output from this third power conductor 33.

[0093] like Figure 4 and Figure 10 As shown, the third power conductor 33 includes a pad portion 331 and a terminal portion 332.

[0094] The solder pad 331 is the portion of the third power conductor 33 covered by the sealing resin 70. The solder pad 331 is electrically connected to the conductive substrate 22B via the second spacer 26B. (As...) Figure 2 , Figure 4 and Figure 10 As shown, the solder pad 331 is electrically connected to the second spacer 26B. There are no limitations on the method of electrical connection; for example, it can be laser bonding, bonding using an electrical connection material, etc.

[0095] Terminal portion 332 is the portion of the third power conductor 33 exposed from the sealing resin 70. For example... Figure 3 , Figure 4 , Figure 6 , Figure 7 and Figure 10 As shown, the terminal portion 332 extends from the sealing resin 70 in the x2 direction.

[0096] like Figures 1 to 7As shown, a pair of gate wires 34A and 34B are adjacent to each conductive substrate 22A and 22B in the y-direction. Gate wire 34A is applied with a gate voltage to drive a plurality of first semiconductor elements 10A. Gate wire 34B is applied with a gate voltage to drive a plurality of second semiconductor elements 10B.

[0097] like Figure 5 As shown, each of the gate conductors 34A and 34B has a pad portion 341 and a terminal portion 342. In each gate conductor 34A and 34B, the pad portion 341 is covered by a sealing resin 70. Each gate conductor 34A and 34B is supported by the sealing resin 70. The terminal portion 342 is connected to the pad portion 341 and protrudes from the sealing resin 70. The terminal portion 342 is L-shaped when viewed in the x-direction. In this embodiment, the terminal portion 342 protrudes from the surface of the sealing resin 70 facing the y1 direction (resin side surface 733).

[0098] like Figures 1 to 7 As shown, a pair of drive source wires 35A and 35B are adjacent to a pair of gate wires 34A and 34B in the x-direction. Drive source wire 35A serves as a reference potential for the gate voltage used to drive a plurality of first semiconductor elements 10A. Drive source wire 35B serves as a reference potential for the gate voltage used to drive a plurality of second semiconductor elements 10B.

[0099] like Figure 5 As shown, a pair of drive source wires 35A and 35B each have a pad portion 351 and a terminal portion 352. In each drive source wire 35A and 35B, the pad portion 351 is covered by a sealing resin 70. Each drive source wire 35A and 35B is supported by the sealing resin 70. The terminal portion 352 is connected to the pad portion 351 and protrudes from the sealing resin 70. The terminal portion 352 is L-shaped when viewed in the x-direction. In this embodiment, the terminal portion 352 protrudes from the surface of the sealing resin 70 facing the y1 direction (resin side surface 733).

[0100] like Figures 1 to 7 As shown, a plurality of dummy wires 36 are located on the opposite side of the pair of drive source wires 35A and 35B in the x-direction relative to the pair of gate wires 34A and 34B. In this embodiment, the number of dummy wires 36 is four. Two of the dummy wires 36 are located on one side of the x-direction (x2 direction). The remaining two dummy wires 36 are located on the other side of the x-direction (x1 direction). The plurality of dummy wires 36 is not limited to the above structure. It may also be a structure without a plurality of dummy wires 36.

[0101] like Figure 5As shown, each of the plurality of dummy wires 36 has a solder pad portion 361 and a terminal portion 362. In each dummy wire 36, the solder pad portion 361 is covered by a sealing resin 70. The plurality of dummy wires 36 are supported by the sealing resin 70. The terminal portion 362 is connected to the solder pad portion 361 and protrudes from the sealing resin 70. The terminal portion 362 is L-shaped when viewed in the x-direction. In this embodiment, the terminal portion 362 protrudes from the surface of the sealing resin 70 facing the y1 direction (resin side surface 733).

[0102] In this embodiment, the gate wires 34A and 34B, the drive source wires 35A and 35B, and the dummy wires 36 are substantially the same shape. Furthermore, these... Figures 1 to 7 As shown, they are arranged along the x-direction. In semiconductor device A1, each wire (first power wire 31, second power wire 32, third power wire 33, a pair of gate wires 34A and 34B, a pair of drive source wires 35A and 35B, and multiple dummy wires 36) is formed from the same wire frame.

[0103] Multiple intermediate wires 40 connect each first semiconductor element 10A to the conductive substrate 22B. The material of each intermediate wire 40 is, for example, Cu or a Cu alloy. The material of each intermediate wire 40 is not limited to this; it can also be a cladding material such as CIC, aluminum, etc. Each intermediate wire 40 is a flat, planar connecting component. Figure 4 As shown, from a top view, each intermediate conductor 40 is a rectangle extending in the x-direction. From a top view, each intermediate conductor 40 overlaps with each extension 321b of the second power conductor 32. The intermediate conductor 40 is an example of a "conducting component," and the material constituting the intermediate conductor 40 is an example of a "first material."

[0104] like Figure 10 As shown, each intermediate conductor 40 includes: a first joint 41, a second joint 42, and a connecting part 43.

[0105] like Figure 10 As shown, the first joint portion 41 is the portion that engages with the first block 61. In this embodiment, the first joint portion 41 and the first block 61 are electrically engaged. The method of electrical engagement is not particularly limited; for example, it can be laser bonding, bonding using an electrical bonding material, etc.

[0106] like Figure 10 As shown, the second bonding portion 42 is the portion that bonds to the conductive substrate 22B. In this embodiment, the second bonding portion 42 is electrically bonded to the conductive substrate 22B. The method of electrical bonding is not particularly limited; for example, it can be laser bonding, bonding using a conductive bonding material, etc.

[0107] The connecting portion 43 is the part that connects the first joint portion 41 and the second joint portion 42. The dimension of the connecting portion 43 in the z-direction is the same as that of the first joint portion 41 and the second joint portion 42. In this embodiment, a portion of the connecting portion 43 is bent in the z-direction. Due to the bending of the connecting portion 43, the first joint portion 41 and the second joint portion 42, which are located at different positions in the z-direction, are connected.

[0108] Each of the multiple lead components 50 is a lead (bonding lead). Each lead component 50 is conductive and its constituent material is, for example, any one of aluminum, gold, or Cu. In this embodiment, as... Figure 4 and Figure 5 As shown, the plurality of lead components 50 include: a plurality of gate leads 51, a plurality of drive source leads 52, a pair of first connection leads 53 and a pair of second connection leads 54.

[0109] like Figure 5 As shown, one end (first end) of each of the plurality of gate leads 51 is connected to the gate electrode 112 of each semiconductor element 10, and the other end (second end) is connected to either of a pair of gate layers 24A, 24B. The plurality of gate leads 51 include: leads for connecting the gate electrode 112 of each first semiconductor element 10A to the gate layer 24A; and leads for connecting the gate electrode 112 of each second semiconductor element 10B to the gate layer 24B.

[0110] like Figure 5 As shown, one end of each of the plurality of driving source leads 52 is connected to the driving source electrode 113 of each semiconductor element 10, and the other end is connected to either of a pair of driving source layers 25A, 25B. The plurality of driving source leads 52 include: leads for connecting the driving source electrode 113 of each first semiconductor element 10A to the driving source layer 25A; and leads for connecting the driving source electrode 113 of each second semiconductor element 10B to the driving source layer 25B.

[0111] like Figure 5 As shown, regarding a pair of first connection leads 53, one connects the gate layer 24A to the gate conductor 34A, and the other connects the gate layer 24B to the gate conductor 34B. One end of the first connection lead 53 of one party is bonded to the gate layer 24A, and the other end is bonded to the pad portion 341 of the gate conductor 34A. One end of the first connection lead 53 of the other party is bonded to the gate layer 24B, and the other end is bonded to the pad portion 341 of the gate conductor 34B.

[0112] like Figure 5As shown, regarding a pair of second connection leads 54, one connects the drive source layer 25A to the drive source conductor 35A, and the other connects the drive source layer 25B to the drive source conductor 35B. One end of the second connection lead 54 of one party is bonded to the drive source layer 25A, and the other end is bonded to the pad portion 351 of the drive source conductor 35A. One end of the second connection lead 54 of the other party is bonded to the drive source layer 25B, and the other end is bonded to the pad portion 351 of the drive source conductor 35B.

[0113] The plurality of conductive blocks 60 are conductive. Each of the plurality of conductive blocks 60 is bonded to a corresponding semiconductor element 10. The z-direction dimension of each conductive block 60 is in the range of 0.1 to 2.0 mm, but this disclosure is not limited thereto. The plurality of conductive blocks 60 includes a plurality of first blocks 61 and a plurality of second blocks 62.

[0114] Each of the plurality of first blocks 61 is sequentially bonded to any one of the plurality of first semiconductor elements 10A. Each first block 61 is electrically bonded to each first semiconductor element 10A using solder or the like. Each first block 61 is opposite to the main surface 101 of each first semiconductor element 10A. In this embodiment, each first block 61 is as follows: Figure 4 The image shows a columnar shape, which appears rectangular when viewed from above. The top view shape of each first block 61 is not limited to this; it can also be circular, oval, or polygonal. The first block 61 may be made of, for example, Cu or a Cu alloy.

[0115] Each of the plurality of second blocks 62 is sequentially bonded to any one of the plurality of second semiconductor elements 10B. Each second block 62 is electrically bonded to each second semiconductor element 10B using solder or the like. Each second block 62 faces the main surface 101 of each second semiconductor element 10B. The z-direction dimension of each second block 62 is not particularly limited, but in this embodiment it is, for example, around 1.83 mm. In this embodiment, each second block 62 is as follows... Figure 4 and Figure 10 The image shows a columnar shape, which appears rectangular when viewed from above. The top view shape of each second block 62 is not limited to this; it can also be circular, oval, or polygonal. The second block 62 is, for example, made of Cu or a Cu alloy.

[0116] The z-direction dimension of each first block 61 is smaller than the z-direction dimension of each second block 62. In this embodiment, the z-direction dimension of each second block 62 is approximately 1.83 mm as described above, therefore the z-direction dimension of each first block 61 is smaller than this value. As a result, each extension 321b of the second power conductor 32 can be positioned above each intermediate conductor 40.

[0117] The capacitor 81 is a plate-type capacitor with a first end and a second end. The first end is placed on the pad portion 311 of the first power conductor 31, and the second end is placed on the connection portion 321a of the second power conductor 32. The capacitor 81 is connected to each of the power conductors 31 and 32, for example, using a conductive bonding material. By electrically connecting the capacitor 81 to the first power conductor 31 and the second power conductor 32, the power supply voltage (input voltage) applied between the first power conductor 31 and the second power conductor 32 can be stabilized. The capacitor 81 is sometimes referred to as a DC connection capacitor. Alternatively, a structure without a capacitor 81 may be used, unlike this embodiment.

[0118] like Figure 4 and Figure 10 As shown, the sealing resin 70 covers a plurality of semiconductor elements 10, a portion of the support substrate 20, a portion of a plurality of conductive lines (a first power conductive line 31, a second power conductive line 32, a third power conductive line 33, a pair of gate conductive lines 34A, 34B, a pair of drive source conductive lines 35A, 35B, and a plurality of dummy conductive lines 36), a plurality of intermediate conductive lines 40, a plurality of lead components 50, and a plurality of conductive blocks 60. The constituent material of the sealing resin 70 is, for example, epoxy resin. Figure 1 , Figure 3 and Figures 6-10 As shown, the sealing resin 70 has a resin main surface 71, a resin back surface 72, and multiple resin side surfaces 731 to 734.

[0119] like Figure 6 and Figures 8-10 As shown, the resin main surface 71 and the resin back surface 72 are separated in the z-direction and face opposite directions. The resin main surface 71 faces the z2 direction, and the resin back surface 72 faces the z1 direction. Figure 7 As shown, viewed from above, the resin back surface 72 is a frame-like structure surrounding the back surfaces 212A and 212B of the insulating substrate 21A and the insulating substrate 21B, respectively. Each back surface 212A, 212B protrudes from the resin back surface 72. Figure 3 and Figures 6-10 As shown, multiple resin side surfaces 731-734 are each connected to both the resin main surface 71 and the resin back surface 72 and are held by them in the z-direction. In this embodiment, resin side surfaces 731 and 732 are separated in the x-direction and face opposite directions. Resin side surface 731 faces the x1 direction, and resin side surface 732 faces the x2 direction. Resin side surfaces 733 and 734 are separated in the y-direction and face opposite directions. Resin side surface 733 faces the y1 direction, and resin side surface 734 faces the y2 direction.

[0120] The coating layer 90 is a layer covering at least a portion of the "conductive component" and is made of a second material. This second material satisfies at least one of the following three conditions: (1) its permeability is higher than that of the first material constituting the "conductive component". (2) its resistivity is higher than that of the first material. (3) its dielectric loss tangent is greater than 0 (greater than the dielectric loss tangent of an ideal dielectric). For example, the first material is Cu. In this case, as a second material with a permeability higher than that of the first material, examples include magnetic metals such as Ni, Co, and Fe. As a second material with a resistivity higher than that of the first material, examples include metals such as Ni, W, and Mo, conductive polymers, and transparent conductive films. As a second material with a dielectric loss tangent greater than 0, examples include dielectrics. Furthermore, when the permeability of the second material is higher than that of the first material, the relative permeability of the second material is preferably, for example, 10 or higher. When the resistivity of the second material is higher than that of the first material, the resistivity of the second material is preferably, for example, more than twice the resistivity of the first material. Regarding condition (3) above, the dielectric loss tangent of the second raw material is preferably 0.01 or higher. The thickness of the cladding layer 90 is not particularly limited, for example, it is 1 μm to 5 μm. When the cladding layer 90 is made of metal, the cladding layer 90 is formed, for example, by a plating of a magnetic material or the like.

[0121] The cladding layer 90 can be a magnetic metal in which the permeability of the second material is higher than that of the first material, and the resistivity of the second material is also higher than that of the first material. Alternatively, the cladding layer 90 can have a structure where the permeability of the second material is higher than that of the first material, and the dielectric loss tangent of the second material is greater than 0. Another option is a structure where the resistivity of the second material is higher than that of the first material, and the dielectric loss tangent of the second material is greater than 0. Finally, the cladding layer 90 can have a structure where the permeability of the second material is higher than that of the first material, the resistivity of the second material is higher than that of the first material, and the dielectric loss tangent of the second material is greater than 0.

[0122] like Figures 1 to 11 As shown, in this embodiment, the covering layer 90 has a first portion 91 and a second portion 92. The first portion 91 covers at least a portion of the first power conductor 31. In this embodiment, the first portion 91 completely covers the first power conductor 31. Figure 11As shown, when the first power conductor 31 functions as a path for the main circuit current, its cross-section is completely covered by the first portion 91. The second portion 92 covers at least a portion of the second power conductor 32. In this embodiment, the second portion 92 completely covers the second power conductor 32. Similarly, when the second power conductor 32 functions as a path for the main circuit current, its cross-section is completely covered by the second portion 92.

[0123] The effects of the aforementioned semiconductor device A1 will now be explained.

[0124] Generally, when alternating current flows through a conductor, the current density is higher closer to the surface of the conductor (this is called the skin effect). The higher the frequency of the alternating current, the more significant the skin effect. In this embodiment, a cladding layer 90 is provided on the conductive components that form the path of the main circuit current in the semiconductor device A1. More specifically, the cladding layer 90 is provided at the location where the density of alternating current due to the skin effect is high. When the permeability of the second material constituting the cladding layer 90 is higher than the permeability of the first material (Cu, etc.) constituting the conductive components (first power wire 31, second power wire 32, etc.), the effect of the skin effect is more significant, and the alternating resistance of the current path increases. As a result, the alternating current flowing in the cladding layer 90 is attenuated, and ringing can be suppressed. On the other hand, the skin effect is relatively less likely to occur with respect to the low-frequency components of the current. Therefore, the low-frequency components of the current are not unduly attenuated due to the cladding layer 90. In addition, since ringing can be suppressed, the buffer circuit provided in the semiconductor device A1 can be simplified, and the reliability of the semiconductor device A1 itself can be improved.

[0125] Furthermore, when the resistivity of the second material constituting the cladding layer 90 is higher than the resistivity of the first material (Cu, etc.) constituting the conductive components (first power wire 31, second power wire 32, etc.), the alternating current flowing in the cladding layer 90 can also be attenuated, suppressing ringing. As described above, the low-frequency components of the current will not be inappropriately attenuated by the cladding layer 90.

[0126] In addition, when the dielectric loss tangent of the second raw material constituting the cladding layer 90 is greater than 0 (greater than the dielectric loss tangent of an ideal dielectric), the energy of the alternating current flowing in the cladding layer 90 can be consumed as dielectric loss, thus suppressing ringing.

[0127] The effects obtained by satisfying the relevant conditions of magnetic permeability, resistivity, and dielectric loss tangent of the second raw material described above can be achieved independently. Therefore, structures that satisfy any two of the relevant conditions of magnetic permeability, resistivity, and dielectric loss tangent of the second raw material, or structures that satisfy all three, can more effectively suppress ringing.

[0128] Figures 12-21 Variations and other embodiments of this disclosure are shown. In these figures, elements that are the same or similar to those in the embodiments described above are labeled with the same symbols.

[0129] Figure 12 A first variation of the semiconductor device A1 is shown. In this variation of the semiconductor device A11, the structure of the cladding layer 90 differs from the example described above. Taking a portion of the cladding layer 90, namely the first part 91, as an example, in this variation, the first part 91 does not cover the entire circumference of the cross-section where the main circuit current flows, but only a portion of it. More specifically, the first part 91 only covers three sides (the top and two side sides) of the rectangular cross-section of the first power conductor 31, leaving the remaining side (the bottom side) uncovered (i.e., the bottom side protrudes from the first part 91). Furthermore, each of the aforementioned three sides (the top and two side sides) is completely covered by the first part 91.

[0130] Figure 13 A second variation of the semiconductor device A1 is shown. Taking a portion of the cladding layer 90, namely the first portion 91, as an example, in this variation, the first portion 91 is formed around the entire circumference of the cross-section where the main circuit current flows, with each side (the top, two side sides, and the bottom) partially exposed (in other words, partially covered) by the first portion 91. In the example shown, the first portion 91 has a plurality of gaps arranged separately from each other along the entire circumference of a rectangular cross-section. Furthermore, these multiple gaps include one or more gaps corresponding to each side of the cross-section. Such a first portion 91 (cladding layer 90) can, for example, be a structure with a plurality of small holes or slits. Alternatively, the first portion 91 (cladding layer 90) can also be configured as an assembly of a plurality of small regions that are separated from each other.

[0131] It is also possible to suppress ringing using semiconductor devices A11 and A12. From these variations, it can be understood that the specific structure of the cladding layer 90 is not particularly limited. Even a structure where the cladding layer 90 covers a portion of the conductive component ( Figure 12 , Figure 13 It can also suppress ringing by adjusting the position or size of the area where the covering layer 90 is set.

[0132] Figures 14-16 A semiconductor device according to a second embodiment of the present disclosure is shown. In the semiconductor device A2 of this embodiment, the structure of the cladding layer 90 is different from that of the cladding layer 90 of the semiconductor device A1 described above.

[0133] In the second embodiment, the first part 91 covers a portion of the first power wire 31, and the second part 92 covers a portion of the second power wire 32. More specifically, the first part 91 does not cover the portion of the first power wire 31 that forms the path between the first semiconductor element 10A and the capacitor 81. That is, the first part 91 covers the terminal portion 312 of the first power wire 31, but does not cover the pad portion 311.

[0134] Furthermore, the second part 92 does not cover the portion of the second power wire 32 that forms the path between the second semiconductor element 10B and the capacitor 81. That is, the second part 92 covers the connection portion 321c of the terminal portion 322 and the pad portion 321 of the second power wire 32, but does not cover the connecting portion 321a and the plurality of extension portions 321b.

[0135] The second embodiment also suppresses ringing. For the portions of the first power conductor 31 and the second power conductor 32 that form the path through which only the charging and discharging current of the capacitor 81 flows, their resistance is equivalent to the ESR of the capacitor 81. That is, this path is for the rapid flow of charging and discharging current through the capacitor 81, so excessively high AC resistance is disadvantageous. In this regard, it is preferable that the first part 91 and the second part 92, as described above, cover a portion of the first power conductor 31 and the second power conductor 32 respectively, for rapid charging and discharging of the capacitor 81.

[0136] Figures 17-19 A semiconductor device according to a third embodiment of the present disclosure is shown. In the semiconductor device A3 of this embodiment, the structure of the cladding layer 90 is different from that of the cladding layer 90 of the semiconductor devices A1 and A2 described above.

[0137] In the third embodiment, the cladding layer 90 includes a first part 91, a second part 92, a third part 93, a fourth part 94, a fifth part 95, and a sixth part 96. The first part 91 and the second part 92 have the same structure as the first part 91 and the second part 92 in the semiconductor device A1.

[0138] The third part 93 covers the copper film 220n of the conductive substrate 22A, which serves as the first metal layer. The fourth part 94 covers the first spacer 26A. The fifth part 95 covers the copper film 220n of the conductive substrate 22B, which serves as the second metal layer. The sixth part 96 covers the plurality of intermediate wires 40. In the example shown, the third part 93 covers the portion of the copper film 220n except for the bonding surface with the graphite substrate 220m. The fifth part 95 covers the portion of the copper film 220n except for the bonding surface with the graphite substrate 220m.

[0139] The third embodiment can also suppress ringing. Furthermore, as can be understood from this embodiment, the placement of the cladding layer 90 can be appropriately changed according to the required level of ringing suppression and the structure of the semiconductor device.

[0140] Figure 20 and Figure 21 A semiconductor device according to a fourth embodiment of the present disclosure is shown. In the semiconductor device A4 of this embodiment, the structures of the first power line 31 and the second power line 32 differ from those of the embodiments described above.

[0141] In the fourth embodiment, viewed along the z-direction, the terminal portion 312 of the first power conductor 31 and the terminal portion 322 of the second power conductor 32 overlap each other. The terminal portion 312 is covered by the first portion 91, and the terminal portion 322 is covered by the second portion 92. An insulator 89 is provided between the terminal portions 312 and 322. When a predetermined voltage is applied between the terminal portions 312 and 322, the insulator 89 serves to insulate them from each other.

[0142] In the fourth embodiment, the second raw material constituting the cladding layer 90 is made of a material with a dielectric loss tangent greater than 0 (larger than the dielectric loss tangent of an ideal dielectric), for example, a dielectric loss tangent of 0.01 or higher. When the cladding layer 90 employs this structure, the terminal portions 312 and 322, the cladding layer 90 between them, and the insulator 89 achieve a portion having electrostatic capacitance, i.e., a portion having an electrical structure similar to that of a capacitor.

[0143] The fourth embodiment can also suppress ringing. In addition, the electrostatic capacitor formed by the terminal portion 312 and the terminal portion 322 and the covering layer 90 and the insulator 89 between them can achieve the superposition effect with the capacitor 81, further improving the stabilization effect of the power supply voltage (input voltage) applied between the first power wire 31 and the second power wire 32.

[0144] The semiconductor device disclosed herein is not limited to the embodiments and variations described above. The specific structure of each part of the semiconductor device disclosed herein can be freely modified in various ways.

[0145] The semiconductor device disclosed herein includes embodiments described in the following appendix.

[0146] Appendix 1.

[0147] Semiconductor devices include:

[0148] At least one semiconductor element having a switching function;

[0149] A conducting component, which forms the current path switched by the semiconductor element, and is made of a first raw material; and

[0150] A covering layer, which covers at least a portion of the conductive component, and is made of a second raw material.

[0151] The second raw material satisfies at least one of the following three conditions:

[0152] (a) The magnetic permeability is higher than that of the first raw material;

[0153] (b) The resistivity is higher than that of the first raw material; and

[0154] (c) The dielectric loss tangent is greater than 0.

[0155] Appendix 2.

[0156] Regarding the semiconductor device described in Appendix 1

[0157] The second raw material is a magnetic conductor with higher permeability and higher resistivity than the first raw material.

[0158] Appendix 3.

[0159] Regarding the semiconductor device described in Appendix 2

[0160] The dielectric loss tangent of the second raw material is greater than 0.

[0161] Appendix 4.

[0162] Regarding the semiconductor device described in Appendix 1

[0163] The second raw material has a higher magnetic permeability than the first raw material and a dielectric loss tangent greater than 0.

[0164] Appendix 5.

[0165] Regarding the semiconductor device described in Appendix 1

[0166] The resistivity of the second raw material is higher than that of the first raw material, and the dielectric loss tangent is greater than 0.

[0167] Appendix 6.

[0168] With respect to any one of Appendices 1 to 5, the semiconductor device

[0169] The thickness of the coating layer is 1μm to 5μm.

[0170] Appendix 7.

[0171] Regarding the semiconductor device described in any one of Appendices 1 to 6

[0172] The relative magnetic permeability of the second raw material is 10 or higher.

[0173] Appendix 8.

[0174] With respect to any one of Appendices 1 to 7, the semiconductor device

[0175] The resistivity of the second raw material is more than twice that of the first raw material.

[0176] Appendix 9.

[0177] With respect to any one of Appendices 1 to 8, the semiconductor device

[0178] The dielectric loss tangent of the second raw material is 0.01 or higher.

[0179] Appendix 10.

[0180] With respect to any one of Appendices 1 to 9, the semiconductor device

[0181] It also includes a capacitor, which has a first terminal and a second terminal for electrical connection.

[0182] The at least one semiconductor element is a plurality of semiconductor elements constituting a half-bridge, the half-bridge comprising at least one set of upper arms and lower arms.

[0183] The plurality of semiconductor elements includes a first semiconductor element contained in the upper arm and a second semiconductor element contained in the lower arm.

[0184] The conductive component includes: a first metal layer connected to the drain electrode of the first semiconductor element; a first power wire connected to the first metal layer; and a second power wire connected to the source electrode of the second semiconductor element.

[0185] The first end of the capacitor is connected to the first power wire, and the second end of the capacitor is connected to the second power wire.

[0186] The covering layer comprises a first portion covering the first power conductor and a second portion covering the second power conductor.

[0187] Appendix 11.

[0188] Regarding the semiconductor device described in Appendix 10

[0189] The first power conductor includes a portion that forms the path between the first semiconductor element and the capacitor, and this portion of the first power conductor is not covered by the first portion.

[0190] Appendix 12.

[0191] Regarding the semiconductor devices described in Appendix 10 or 11

[0192] The second power conductor includes a portion that forms the path between the second semiconductor element and the capacitor, and this portion of the second power conductor is not covered by the second portion.

[0193] Appendix 13.

[0194] Regarding the semiconductor device described in any one of Appendices 10 to 12,

[0195] The cladding layer includes a third portion that covers the first metal layer.

[0196] Appendix 14.

[0197] With respect to any one of Appendices 10 to 13, the semiconductor device

[0198] The conductive component includes: a second metal layer connected to the drain electrode of the second semiconductor element; and a third power wire connected to the second metal layer.

[0199] The second metal layer and the third power conductor are not covered by the cladding layer.

[0200] Appendix 15.

[0201] Regarding the semiconductor device described in Appendix 14

[0202] The conductive component includes an intermediate wire connected to the source electrode of the first semiconductor element and the second metal layer, the intermediate wire being not covered by the cladding layer.

[0203] Appendix 16.

[0204] With respect to any one of Appendices 10 to 15, the semiconductor device

[0205] The conductive component includes a first spacer between the first metal layer and the first power wire.

[0206] The covering layer includes a fourth portion that covers the first septum.

[0207] Appendix 17.

[0208] Regarding the semiconductor device described in any one of Appendices 10 to 16,

[0209] The conducting component includes a conductor located between the source electrode of the second semiconductor element and the second power wire.

[0210] Appendix 18.

[0211] With respect to any one of Appendices 1 to 17, the semiconductor device

[0212] The semiconductor element is any one of SiC MOSFET, SiC IGBT, Si MOSFET, Si IGBT and GaN HEMT.

[0213] Symbol Explanation

[0214] A1, A11, A12, A2, A3, A4—Semiconductor devices; 10—Semiconductor elements; 10A—First semiconductor element; 10B—Second semiconductor element; 11—Main electrode; 12—Drain electrode (back electrode); 13—Insulating film; 20—Supporting substrate; 21, 21A, 21B—Insulating substrate; 22A, 22B—Conductive substrate; 23A, 23B—Insulating layer; 24A, 24B—Gate layer; 25A, 25B—Driver source layer; 26A—First spacer ; 31—First power wire; 32—Second power wire; 33—Third power wire; 34A, 34B—Gate wire; 35A, 35B—Drive source wire; 36—Dummy wire; 40—Intermediate wire; 41—First junction; 42—Second junction; 43—Connection part; 50—Lead component; 51—Gate lead; 52—Drive source lead; 53—First connecting lead; 54—Second connecting lead; 60—Conductive block; 61—First block; 62—Second block; 70—Sealing Resin; 71—Resin main surface; 72—Resin back surface; 81—Capacitor; 89—Insulator; 90—Covering layer; 91—First part; 92—Second part; 93—Third part; 94—Fourth part; 95—Fifth part; 96—Sixth part; 101—Component main surface; 102—Component back surface; 111—Source electrode; 112—Gate electrode; 113—Drive source electrode; 211A, 211B—Main surface; 212A, 212B—Back surface; 220A, 220B—Substrate bonding material; 220m—Graphite substrate; 220n—Copper film; 221A, 221B—Main surface; 222A, 222B—Back surface; 260A—Spacer bonding material; 260B—Spacer bonding material; 311, 321, 331, 341, 351, 361—Pad portion; 312, 322, 332, 342, 352, 362—Terminal portion; 321a—Connecting portion; 321b—Extension portion; 321c—Connecting portion; 731, 732, 733, 734—Resin side surface.

Claims

1. A semiconductor device, characterized in that, have: At least one semiconductor element having a switching function; A conducting component, which becomes the path for the current switched by the semiconductor element, and is made of a first raw material; and A covering layer, which covers at least a portion of the conductive component, and is made of a second raw material. The second raw material is a dielectric.

2. The semiconductor device according to claim 1, characterized in that, The dielectric loss tangent of the second raw material is greater than 0.

3. The semiconductor device according to claim 1, characterized in that, The thickness of the coating layer is 1μm to 5μm.

4. The semiconductor device according to claim 1, characterized in that, The resistivity of the second raw material is more than twice that of the first raw material.

5. The semiconductor device according to claim 1, characterized in that, The dielectric loss tangent of the second raw material is 0.01 or higher.

6. The semiconductor device according to claim 1, characterized in that, It also includes a capacitor, which has a first terminal and a second terminal for electrical connection. The at least one semiconductor element is a plurality of semiconductor elements constituting a half-bridge, the half-bridge comprising at least one set of upper arms and lower arms. The plurality of semiconductor elements includes a first semiconductor element contained in the upper arm and a second semiconductor element contained in the lower arm. The conductive component includes: a first metal layer connected to the drain electrode of the first semiconductor element; and a first power wire connected to the first metal layer. And a second power wire, which is connected to the source electrode of the second semiconductor element. The first end of the capacitor is connected to the first power wire, and the second end of the capacitor is connected to the second power wire. The covering layer comprises a first portion covering the first power conductor and a second portion covering the second power conductor.

7. The semiconductor device according to claim 6, characterized in that, The first power conductor includes a portion that forms the path between the first semiconductor element and the capacitor, and this portion of the first power conductor is not covered by the first portion.

8. The semiconductor device according to claim 6, characterized in that, The second power conductor includes a portion that forms the path between the second semiconductor element and the capacitor, and this portion of the second power conductor is not covered by the second portion.

9. The semiconductor device according to claim 6, characterized in that, The cladding layer includes a third portion that covers the first metal layer.

10. The semiconductor device according to claim 6, characterized in that, The conductive component includes: a second metal layer connected to the drain electrode of the second semiconductor element; and a third power wire connected to the second metal layer. The second metal layer and the third power conductor are not covered by the cladding layer.

11. The semiconductor device according to claim 10, characterized in that, The conductive component includes an intermediate wire connected to the source electrode of the first semiconductor element and the second metal layer, the intermediate wire being not covered by the cladding layer.

12. The semiconductor device according to claim 6, characterized in that, The conductive component includes a first spacer between the first metal layer and the first power wire. The covering layer includes a fourth portion that covers the first septum.

13. The semiconductor device according to claim 6, characterized in that, The conducting component includes a conductor located between the source electrode of the second semiconductor element and the second power wire.

14. The semiconductor device according to any one of claims 1 to 13, characterized in that, The semiconductor element is any one of SiC MOSFET, SiC IGBT, Si MOSFET, Si IGBT and GaN HEMT.

15. A semiconductor device, characterized in that, have: At least one semiconductor element having a switching function; The conducting component, which becomes the path for the current switched by the semiconductor element, is made of a first raw material; A covering layer that covers at least a portion of the conductive component and is made of a second raw material; and A capacitor has a first terminal and a second terminal for electrical connection. The at least one semiconductor element is a plurality of semiconductor elements constituting a half-bridge, the half-bridge comprising at least one set of upper arms and lower arms. The plurality of semiconductor elements includes the first semiconductor element contained in the upper arm. The conductive component includes: a first metal layer connected to the drain electrode of the first semiconductor element; and a first power wire connected to the first metal layer. The first end of the capacitor is connected to the first power wire. The cladding layer includes a first portion that covers the first power conductor. The first power conductor includes a portion that forms the path between the first semiconductor element and the capacitor, and this portion of the first power conductor is not covered by the first portion.

16. The semiconductor device according to claim 15, characterized in that, The plurality of semiconductor elements includes a second semiconductor element contained in the lower arm. The conducting component includes a second power wire connected to the source electrode of the second semiconductor element. The second terminal of the capacitor is connected to the second power wire. The cladding layer includes a second portion that covers the second power conductor. The second power conductor includes a portion that forms the path between the second semiconductor element and the capacitor, and this portion of the second power conductor is not covered by the second portion.

17. The semiconductor device according to claim 16, characterized in that, The conductive component includes: a second metal layer connected to the drain electrode of the second semiconductor element; and a third power wire connected to the second metal layer. The second metal layer and the third power conductor are not covered by the cladding layer.

18. A semiconductor device, characterized in that, have: At least one semiconductor element having a switching function; The conducting component, which becomes the path for the current switched by the semiconductor element, is made of a first raw material; A covering layer that covers at least a portion of the conductive component and is made of a second raw material; as well as A gate wire, to which a voltage is applied to drive the semiconductor element. The gate conductor is not covered by the cladding layer.

19. A semiconductor device, characterized in that, have: At least one semiconductor element having a switching function; The conducting component, which becomes the path for the current switched by the semiconductor element, is made of a first raw material; A support substrate, on which the at least one semiconductor element is mounted, and comprising a conductive substrate; and The coating layer is composed of a second raw material. The conductive substrate comprises a graphite substrate and copper films formed on both sides of the graphite substrate in the thickness direction. The coating layer covers at least a portion of the conductive component and the portion of the copper film other than the interface with the graphite substrate.

20. A semiconductor device, characterized in that, have: At least one semiconductor element having a switching function; The conducting component, which becomes the path for the current switched by the semiconductor element, is made of a first raw material; A sealing resin that covers at least a portion of the semiconductor element and the conductive component; as well as A covering layer, which covers at least a portion of the conductive component, and is made of a second raw material. The at least one semiconductor element is a plurality of semiconductor elements constituting a half-bridge, the half-bridge comprising at least one set of upper arms and lower arms. The plurality of semiconductor elements includes a first semiconductor element contained in the upper arm and a second semiconductor element contained in the lower arm. The conductive component includes: a first metal layer connected to the drain electrode of the first semiconductor element; a first power wire connected to the first metal layer; and a second power wire connected to the source electrode of the second semiconductor element. The first power wire and the second power wire each include a first terminal portion and a second terminal portion exposed from the sealing resin, respectively. When viewed in the thickness direction of the semiconductor element, the first terminal portion and the second terminal portion overlap each other.

21. The semiconductor device according to claim 20, characterized in that, It also includes an insulator disposed between the first terminal portion and the second terminal portion. The first terminal portion and the second terminal portion are not covered by the covering layer.

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