Process environment detection device, thin film deposition equipment and method and storage medium

Abstract

The invention provides a process environment detection device, thin film deposition equipment, a thin film deposition method and a computer readable storage medium. The process environment detection device comprises a carrying disc and a controller. The carrier disc comprises a plurality of composite detection modules. And the plurality of composite detection modules are distributed at a plurality of positions of the loading disc and are used for collecting temperatures and currents at a plurality of corresponding positions on the surface of the heating disc when the loading disc is located at the heating disc of the process chamber. The controller is connected with the multiple composite detection modules and is configured to determine the process environment of the surface of the heating disc according to the temperature and the current collected by the multiple composite detection modules. The temperature distribution and the current distribution can be detected synchronously, so that the detection of the process environment in the thin film deposition equipment is improved, and the finished product quality of the thin film deposition process is improved.

Description

Technical Field

[0001] This invention relates to the field of semiconductor device processing, and more particularly to a process environment detection device, a thin film deposition apparatus, a thin film deposition method, and a computer-readable storage medium. Background Technology

[0002] In semiconductor manufacturing, the uniformity of plasma within thin-film deposition equipment is a key indicator determining the consistency of the thin film. However, existing plasma diagnostics for thin-film deposition equipment often employ single-physical-field detection schemes, such as using Rogowski coils to diagnose electromagnetic properties to obtain current distribution, or relying solely on thermocouples to detect thermal properties to obtain temperature distribution. However, the electromagnetic and thermal behaviors of plasma are strongly coupled: the radio frequency current distribution determines the spatial distribution of plasma energy density, while the temperature distribution directly affects the thin film growth rate and reaction kinetics. A single diagnostic approach cannot characterize the complete interaction mechanism of energy input, heat conduction, and material deposition. This easily leads to a bottleneck in process optimization where adjusting parameters solely based on current uniformity fails to improve thin film uniformity, thus hindering the improvement of high-end thin-film deposition quality.

[0003] In order to overcome the above-mentioned defects in the existing technology, there is an urgent need in the field for an improved process environment detection device to improve the detection of the process environment inside the thin film deposition equipment, thereby improving the quality of the finished product of the thin film deposition process. Summary of the Invention

[0004] The following provides a brief overview of one or more aspects to offer a basic understanding of them. This overview is not an exhaustive summary of all conceived aspects, nor is it intended to identify key or decisive elements of all aspects, nor to define the scope of any or all aspects. Its sole purpose is to present some concepts of one or more aspects in a simplified form as a prelude to the more detailed descriptions that follow.

[0005] To overcome the aforementioned deficiencies in the prior art, the present invention provides a process environment detection device, a thin film deposition equipment, a thin film deposition method, and a computer-readable storage medium. By simultaneously detecting temperature and current distributions, the device can improve the detection of the internal process environment of the thin film deposition equipment, thereby improving the quality of the finished product from the thin film deposition process.

[0006] Specifically, the process environment detection device according to the first aspect of the present invention includes a carrier plate and a controller. The carrier plate includes multiple composite detection modules. The multiple composite detection modules are distributed at multiple locations on the carrier plate and are used to collect temperature and current at multiple corresponding locations on the surface of the heating plate when the carrier plate is located on the heating plate of the process chamber. The controller is connected to the multiple composite detection modules and is configured to determine the process environment on the surface of the heating plate based on the temperature and current collected by the multiple composite detection modules.

[0007] Furthermore, in some embodiments of the present invention, the plurality of composite detection modules include at least one first composite detection module distributed in the central region of the carrier disk, and a plurality of second composite detection modules distributed in the edge region of the carrier disk. The step of determining the plasma characteristics within the process chamber based on the temperature and current collected by the plurality of composite detection modules includes: determining the current distribution on the surface of the heating plate based on the current collected by the plurality of composite detection modules; determining the temperature distribution on the surface of the heating plate based on the temperature collected by the plurality of composite detection modules; and determining whether the process environment on the surface of the heating plate meets the standards based on the current distribution and the temperature distribution.

[0008] Furthermore, in some embodiments of the present invention, the step of determining whether the process environment of the heating plate surface meets the standard based on the current distribution and the temperature distribution includes: determining a reference current based on the current distribution, and determining the current deviation of each position on the heating plate surface relative to the reference current; determining a reference temperature based on the temperature distribution, and determining the temperature deviation of each position on the heating plate surface relative to the reference temperature; and determining that the process environment of the position does not meet the standard in response to the current deviation of any position being greater than or equal to a preset current deviation threshold, or the temperature deviation of any position being greater than or equal to a preset temperature deviation threshold.

[0009] Furthermore, in some embodiments of the present invention, the controller is also connected to the spray plate in the process chamber and is configured to: reduce the spray aperture at the corresponding position of the spray plate in response to a current deviation at each of the positions being less than the current deviation threshold and a temperature deviation at any of the positions being greater than or equal to the temperature deviation threshold.

[0010] Furthermore, in some embodiments of the present invention, the controller is also connected to multiple radio frequency electrodes disposed in the heating plate, and is configured to: in response to a current deviation at any of the positions being greater than or equal to the current deviation threshold, and a temperature deviation at each of the positions being less than the temperature deviation threshold, reduce the power of the radio frequency electrode at the corresponding position of the heating plate.

[0011] Furthermore, in some embodiments of the present invention, the controller is also connected to an interactive interface and is configured to: in response to a substandard process environment location being located at the edge of the heating plate, determine that the insulation of the edge of the heating plate has failed, and output a signal to the interactive interface to replace the edge insulation bushing.

[0012] Furthermore, in some embodiments of the present invention, the step of determining whether the process environment of the heating plate surface meets the standard based on the current distribution and the temperature distribution further includes: in response to the current deviation at each of the locations being less than the current deviation threshold and the temperature deviation at each of the locations being less than the temperature deviation threshold, determining that the process environment of the heating plate surface meets the standard, and outputting a prompt signal for performing the thin film deposition process.

[0013] Furthermore, in some embodiments of the present invention, the composite detection module includes a coil support, a coil, and a thermocouple. The coil support is used to fix the coil. The coil is wound around the coil support to collect current at multiple corresponding positions on the surface of the heating plate. The thermocouple is located at the center of the coil support to collect temperature at multiple corresponding positions on the surface of the heating plate.

[0014] Furthermore, the thin film deposition apparatus provided according to the second aspect of the present invention includes a process environment detection device and a process chamber as provided in the first aspect of the present invention. The process chamber is at least configured with a spray plate having adjustable spray orifice diameter, a removable spray plate, a heating plate having multiple radio frequency electrodes, or a removable edge insulating bushing.

[0015] Furthermore, the thin film deposition method provided by the third aspect of the present invention includes the following steps: placing a process environment detection device as provided by the first aspect of the present invention into a process chamber; acquiring temperature and current at multiple locations on the surface of a heating plate in the process chamber via the detection device, and determining the process environment on the surface of the heating plate accordingly; and performing a thin film deposition process on the wafer to be processed in the process chamber in response to the process environment on the surface of the heating plate meeting the standard.

[0016] Furthermore, the computer-readable storage medium provided according to the fourth aspect of the present invention stores computer instructions thereon. When the computer instructions are executed by a controller, the thin film deposition method as provided in the third aspect of the present invention is implemented. Attached Figure Description

[0017] The above-described features and advantages of the present invention will be better understood after reading the following detailed description of embodiments of the present disclosure in conjunction with the accompanying drawings. In the drawings, components are not necessarily drawn to scale, and components having similar related properties or features may have the same or similar reference numerals.

[0018] Figure 1 A schematic diagram of the internal structure of a thin film deposition apparatus provided according to some embodiments of the present invention is shown.

[0019] Figure 2 A schematic diagram of the structure of a composite detection module provided according to some embodiments of the present invention is shown.

[0020] Figure 3 A schematic diagram showing the position of a composite detection module on a carrier disk according to some embodiments of the present invention is provided.

[0021] Figure 4 A schematic diagram of the structure of a coil winding coil support provided according to some embodiments of the present invention is shown.

[0022] Figure 5 A schematic diagram is shown of a coil and coil support embedded in a carrier disk according to some embodiments of the present invention.

[0023] Figure 6 A schematic diagram is shown of a coil and coil support embedded in a carrier disk according to some embodiments of the present invention.

[0024] Figure 7 A schematic diagram of a structure for acquiring a current signal is shown according to some embodiments of the present invention.

[0025] Figure 8 A circuit diagram of an integrator provided according to some embodiments of the present invention is shown.

[0026] Figure 9 A schematic flowchart of a thin film deposition method according to some embodiments of the present invention is shown. Detailed Implementation

[0027] The following specific embodiments illustrate the implementation of the present invention. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. Although the description of the present invention is presented in conjunction with preferred embodiments, this does not mean that the features of the invention are limited to these embodiments. On the contrary, the purpose of describing the invention in conjunction with embodiments is to cover other options or modifications that may be derived based on the claims of the present invention. To provide a thorough understanding of the invention, many specific details will be included in the following description. The invention may also be implemented without using these details. Furthermore, to avoid confusion or obscuring the focus of the invention, some specific details will be omitted in the description.

[0028] In the description of this invention, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this invention based on the specific circumstances.

[0029] Furthermore, the terms "upper," "lower," "left," "right," "top," "bottom," "horizontal," and "vertical" used in the following description should be understood as the orientations shown in the relevant paragraphs and accompanying drawings. These relative terms are for illustrative purposes only and do not imply that the described apparatus must be manufactured or operated in a specific orientation, and therefore should not be construed as limiting the invention.

[0030] It is understood that although terms such as "first," "second," and "third" may be used herein to describe various components, regions, layers, and / or parts, these components, regions, layers, and / or parts should not be limited by these terms, and these terms are only used to distinguish different components, regions, layers, and / or parts. Therefore, the first components, regions, layers, and / or parts discussed below may be referred to as second components, regions, layers, and / or parts without departing from some embodiments of the present invention.

[0031] As mentioned above, existing plasma diagnostics for thin film deposition equipment often employ single-physical-field detection schemes. For example, they may use Rogowski coils to diagnose electromagnetic properties to obtain current distribution, or rely solely on thermocouples to detect thermal properties to obtain temperature distribution. However, there is a strong coupling relationship between the electromagnetic and thermal behaviors of plasma: the radio frequency current distribution determines the spatial distribution of plasma energy density, while the temperature distribution directly affects the thin film growth rate and reaction kinetics. Single diagnostics cannot characterize the complete interaction mechanism of energy input, heat conduction, and material deposition. This can easily lead to a bottleneck in process optimization where adjusting parameters solely based on current uniformity fails to improve thin film uniformity, thus hindering the improvement of high-end thin film deposition quality.

[0032] To overcome the aforementioned deficiencies in the prior art, the present invention provides a process environment detection device, a thin film deposition equipment, a thin film deposition method, and a computer-readable storage medium. By simultaneously detecting temperature and current distributions, the device can improve the detection of the internal process environment of the thin film deposition equipment, thereby improving the quality of the finished product from the thin film deposition process.

[0033] In some non-limiting embodiments, the detection device for the process environment provided in the first aspect of the present invention can be configured in the thin film deposition equipment provided in the second aspect of the present invention and implemented based on the thin film deposition method provided in the third aspect of the present invention.

[0034] Please refer to Figure 1 . Figure 1 A schematic diagram of the internal structure of a thin film deposition apparatus provided according to some embodiments of the present invention is shown.

[0035] exist Figure 1 In the illustrated embodiment, the thin film deposition apparatus provided according to the second aspect of the present invention includes a detection device for the process environment as provided in the first aspect of the present invention and a process chamber. Here, the process chamber is at least configured with a spray plate 20 having adjustable spray orifice diameter, a removable spray plate 20, a heating plate 30 having multiple radio frequency electrodes, or a removable edge insulating bushing.

[0036] like Figure 1 As shown, the spray plate 20 and the heating plate 30 inside the process chamber form upper and lower electrodes, which excite the radio frequency electric field inside the process chamber. This electric field can ionize the process gas introduced into the chamber to form capacitively coupled plasma for thin film deposition.

[0037] Please refer to further details. Figure 2 and Figure 3 . Figure 2 A schematic diagram of the structure of a composite detection module provided according to some embodiments of the present invention is shown. Figure 3 A schematic diagram showing the position of a composite detection module on a carrier disk according to some embodiments of the present invention is provided.

[0038] exist Figure 2 In the illustrated embodiment, the detection device for the process environment provided by the first aspect of the present invention includes a carrier disk and a controller. Here, the carrier disk includes multiple composite detection modules 10. The multiple composite detection modules 10 are distributed at multiple locations on the carrier disk and are used to collect temperature and current at multiple corresponding locations on the surface of the heating disk when the carrier disk is located on the heating disk of the process chamber.

[0039] Furthermore, in Figure 3 In the illustrated embodiment, the plurality of composite detection modules 10 include at least one first composite detection module distributed in the central region of the carrier disk, and a plurality of second composite detection modules distributed in the edge region of the carrier disk.

[0040] For example, the aforementioned carrier disk includes 11 composite detection modules 10, with 3 first composite detection modules arranged radially in its central region and 8 second composite detection modules arranged circumferentially in its edge region.

[0041] Please refer to the reference. Figure 2 , Figures 4-6 . Figure 4 A schematic diagram of the structure of a coil winding coil support provided according to some embodiments of the present invention is shown. Figure 5 A schematic diagram is shown of a coil and coil support embedded in a carrier disk according to some embodiments of the present invention. Figure 6 A schematic diagram is shown of a coil and coil support embedded in a carrier disk according to some embodiments of the present invention.

[0042] Furthermore, in Figure 2 The composite detection module 10 includes a coil support 11, a coil 12, and a thermocouple 13. The coil support 11 is used to fix the coil 12. The coil 12 is wound around the coil support 11 to collect current at multiple corresponding locations on the surface of the heating plate. The thermocouple 11 is located at the center of the coil support 11 to collect temperature at multiple corresponding locations on the surface of the heating plate.

[0043] Here, coil 12 is made of enameled wire with a diameter of 0.3 mm, and coil support 11 is a polytetrafluoroethylene support with an outer diameter of 0.5 mm. Figure 4 and Figure 5 As shown, coil 12 is tightly wound on coil support 11 and embedded in aluminum nitride ceramic carrier.

[0044] Please refer to further information. Figure 7 and Figure 8 . Figure 7 A schematic diagram of a structure for acquiring a current signal is shown according to some embodiments of the present invention. Figure 8 A circuit diagram of an integrator provided according to some embodiments of the present invention is shown.

[0045] exist Figure 7 and Figure 8 In the illustrated embodiment, the composite detection module 10 is connected to an integrator and an oscilloscope 14 at the back end. Here, the integrator is used to perform sensitivity conversion on the current output by the composite detection module 10 to restore the current signal to a voltage signal. The oscilloscope 14 is used to display and record the voltage signal data.

[0046] In some non-limiting embodiments, the detection device for the process environment described above, provided in the first aspect of the present invention, includes a memory and a controller. Here, the memory includes, but is not limited to, the computer-readable storage medium provided in the fourth aspect above, on which computer instructions are stored. The controller is connected to the memory and configured to execute the computer instructions stored in the memory to implement the thin film deposition method as provided in the third aspect of the present invention.

[0047] The working principle of the above-mentioned process environment detection device and thin film deposition equipment will be described below with reference to some embodiments of thin film deposition methods. Those skilled in the art will understand that these embodiments of thin film deposition methods are merely non-limiting implementations provided by the present invention, intended to clearly demonstrate the main concepts of the invention and provide some specific solutions convenient for public implementation, rather than limiting all functions or all operating methods of the process environment detection device and thin film deposition equipment. Similarly, the process environment detection device and thin film deposition equipment are also only one non-limiting implementation provided by the present invention, and do not constitute a limitation on the executing entity and execution order of each step in these thin film deposition methods.

[0048] Please refer to Figure 9 . Figure 9 A schematic flowchart of a thin film deposition method according to some embodiments of the present invention is shown.

[0049] like Figure 9 As shown, a technician can first place the process environment detection device provided in the first aspect of the present invention into the process chamber.

[0050] Subsequently, technicians can use the detection device to collect temperature and current at multiple locations on the surface of the heating plate 30 in the process chamber, and determine the process environment on the surface of the heating plate 30 accordingly.

[0051] Specifically, such as Figure 1 As shown, the controller of the detection device can determine the current distribution on the surface of the heating plate 30 based on the current collected by the multiple composite detection modules 10, and determine the temperature distribution on the surface of the heating plate 30 based on the temperature collected by the multiple composite detection modules 10.

[0052] Subsequently, the controller can determine whether the process environment of the heating plate 30 surface meets the standards based on the current distribution and the temperature distribution.

[0053] Specifically, in the process of determining whether the process environment on the surface of the heating plate meets the standard, the controller can determine a reference current based on the current distribution, and determine the current deviation (e.g., ratio or value) of each position on the surface of the heating plate 30 relative to the reference current.

[0054] Furthermore, in determining the reference current, the controller can use the average of all measured locations as the reference current. :

[0055] Similarly, the controller can also determine a reference temperature based on the temperature distribution, and determine the temperature deviation (e.g., ratio or value) of each position on the surface of the heating plate 30 relative to the reference temperature.

[0056] Furthermore, in determining the reference temperature, the controller can use the average of all measured locations as the reference temperature. :

[0057] Subsequently, in response to a current deviation at any of the locations being greater than or equal to a preset current deviation threshold, or a temperature deviation at any of the locations being greater than or equal to a preset temperature deviation threshold, the controller can determine that the process environment at the location is not up to standard.

[0058] Thus, the process environment detection device provided in this application can establish a multi-parameter process evaluation model of current and temperature, providing a more comprehensive decision-making basis for process environment optimization. By analyzing the correlation between current distribution and temperature distribution, the influence of process parameters on plasma energy uniformity, thermal field uniformity, and thin film deposition consistency can be quantitatively evaluated, thereby accurately selecting the optimal process parameters.

[0059] Furthermore, in some alternative embodiments, the controller is also connected to the spray plate 10 in the process chamber. Here, in response to the current deviation at each of the locations being less than the current deviation threshold, the temperature deviation at any of the locations being greater than or equal to the temperature deviation threshold, and the correlation coefficient being greater than the correlation threshold, the controller can reduce the spray orifice diameter at the corresponding location of the spray plate 10.

[0060] For example, the composite detection module 10 shows a standard deviation of 5.8% for the current distribution at each location, but the outer ring temperature is 5°C higher. The process result indicates a higher film thickness on the outer ring, the root cause of which is excessive gas flow velocity at the outer ring inlet, leading to enhanced local heat transfer. The controller can correspondingly reduce the outer ring aperture of the spray plate 20 to adjust the edge gas flow rate and airflow distribution, thereby controlling the optimized temperature distribution within ±0.5°C, and restoring the process result to normal.

[0061] For example, the composite detection module 10 shows that the current deviation at each location is <5%, indicating uniform current distribution. However, the temperature at a certain location on the wafer edge reaches 185℃, while the temperatures at other locations are 150±5℃. The controller can determine, based on the correlation coefficient of 0.92 between the current and temperature at this location and the deposition mechanism, that the local plasma activity inside the current process chamber is too high. Although the energy density corresponding to the current is within the threshold, uneven airflow at the chamber edge leads to heat accumulation. In this case, the controller can adjust the spray aperture of the spray plate 10 accordingly and repeat the process environment test. After adjustment, the temperature at the abnormal location drops to 158℃, and the current distribution remains uniform.

[0062] Those skilled in the art will understand that the above-described embodiment in which the spray orifice diameter of the spray disc 10 can be adaptively adjusted is merely a non-limiting implementation provided by the present invention, intended to clearly demonstrate the main concept of the present invention and provide some specific solutions that are easy for the public to implement, rather than intended to limit the scope of protection of the present invention.

[0063] Alternatively, in other embodiments, technicians can also achieve the same effect of increasing or decreasing the spray hole diameter at the corresponding position by replacing the spray plate.

[0064] Furthermore, in some optional embodiments, the controller is also connected to radio frequency electrodes located at multiple positions within the heating plate 30. Here, in response to a current deviation at any of the stated positions being greater than or equal to a current deviation threshold, a temperature deviation at each stated position being less than a temperature deviation threshold, and a correlation coefficient being greater than a correlation threshold, the controller can adjust the power of the radio frequency electrodes at the corresponding positions of the heating plate 30.

[0065] For example, the composite detection module 10 shows that the temperature fluctuation at each location is ±0.5℃, but the local current is 28% higher than normal. The process result shows an abnormally high point in the film thickness. The root cause is that the RF power exceeds the process stability range, causing local discharge. The controller can correspondingly reduce the RF power supply to 90% of the rated power, reducing the optimized current distribution standard deviation to 6.2%, and the process result returns to normal.

[0066] Furthermore, in some embodiments, the controller is also connected to an interface. Here, in response to a substandard process environment located at the edge of the heating plate 30, the controller can determine that the insulation at the edge of the heating plate 30 has failed and output a signal to the interface to replace the edge insulation bushing.

[0067] For example, the composite detection module 10 shows that the edge current is 38% too high and the temperature is 7°C too low. The process result is uneven film thickness, the root cause of which is a crack in the electrode edge insulating bushing, leading to distortion of the electric field or thermal conduction. The controller can correspondingly output a signal to the interactive interface to replace the edge insulating bushing, thereby adjusting the state of the electrode assembly or insulating component, reducing the optimized current standard deviation to 4.9%, achieving temperature uniformity of ±0.5°C, and restoring the film thickness to normal.

[0068] Alternatively, in some embodiments, in response to the current deviation at each of the said locations being less than the current deviation threshold and the temperature deviation at each of the said locations being less than the temperature deviation threshold, the controller can determine that the process environment on the surface of the heating plate meets the requirements and output a prompt signal for performing the thin film deposition process.

[0069] Subsequently, in response to the fact that the process environment on the surface of the heating plate meets the requirements, technicians can perform thin film deposition on the wafer to be processed in the process chamber.

[0070] In summary, the process environment detection device, thin film deposition equipment, thin film deposition method, and computer-readable storage medium provided by the present invention can all improve the detection of the internal process environment of the thin film deposition equipment by simultaneously detecting temperature distribution and current distribution, thereby improving the quality of the finished product of the thin film deposition process.

[0071] Although the methods described above are illustrated and depicted as a series of actions for the sake of simplicity, it should be understood and appreciated that these methods are not limited by the order of the actions, as some actions may occur in a different order and / or concurrently with other actions from the illustrations and descriptions herein or not illustrated and described herein but which may be understood by those skilled in the art, according to one or more embodiments.

[0072] Those skilled in the art will further appreciate that the various illustrative logic blocks, modules, circuits, and algorithm steps described in conjunction with the embodiments disclosed herein can be implemented as electronic hardware, computer software, or a combination of both. To clearly illustrate this interchangeability between hardware and software, the various illustrative components, blocks, modules, circuits, and steps are described above in a generalized manner in terms of their functionality. Whether such functionality is implemented as hardware or software depends on the specific application and the design constraints imposed on the overall system. Those skilled in the art may implement the described functionality in different ways for each specific application, but such implementation decisions should not be construed as departing from the scope of the invention.

[0073] The steps of the methods or algorithms described in conjunction with the embodiments disclosed herein may be embodied directly in hardware, in a software module executed by a processor, or in a combination of both. The software module may reside in RAM memory, flash memory, ROM memory, EPROM memory, EEPROM memory, registers, hard disk, removable disk, CD-ROM, or any other form of storage medium known in the art. An exemplary storage medium is coupled to a processor such that the processor can read and write information to / from the storage medium. In an alternative, the storage medium may be integrated into the processor. The processor and storage medium may reside in an ASIC. The ASIC may reside in a user terminal. In an alternative, the processor and storage medium may reside as discrete components in the user terminal.

[0074] In one or more exemplary embodiments, the described functionality may be implemented in hardware, software, firmware, or any combination thereof. If implemented in software as a computer program product, the functionality may be stored or transmitted as one or more instructions or code on or through a computer-readable medium. A computer-readable medium includes both computer storage media and communication media, encompassing any medium that facilitates the transfer of a computer program from one location to another. A storage medium may be any available medium accessible to a computer. By way of example and not limitation, such a computer-readable medium may include RAM, ROM, EEPROM, CD-ROM or other optical disc storage, disk storage or other magnetic storage devices, or any other medium that can be used to carry or store desired program code in the form of instructions or data structures and is accessible to a computer. Any connection is also legitimately referred to as a computer-readable medium. For example, if the software is transmitted from a website, server, or other remote source using coaxial cable, fiber optic cable, twisted pair, digital subscriber line (DSL), or wireless technologies such as infrared, radio, and microwave, then the coaxial cable, fiber optic cable, twisted pair, DSL, or wireless technologies such as infrared, radio, and microwave are included in the definition of a medium. As used in this article, disk and disc include compact discs (CDs), laser discs, optical discs, digital multi-purpose discs (DVDs), floppy disks, and Blu-ray discs. Disks typically reproduce data magnetically, while discs reproduce data optically using lasers. Combinations of these should also be included within the scope of computer-readable media.

[0075] The prior description of this disclosure is provided to enable any person skilled in the art to make or use this disclosure. Various modifications to this disclosure will be apparent to those skilled in the art, and the general principles defined herein may be applied to other variations without departing from the spirit or scope of this disclosure. Therefore, this disclosure is not intended to be limited to the examples and designs described herein, but should be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A device for detecting process environment, characterized in that, include: The carrier disk includes multiple composite detection modules, wherein the multiple composite detection modules are distributed at multiple positions on the carrier disk, and are used to collect the temperature and current at multiple corresponding positions on the surface of the heating disk when the carrier disk is located on the heating disk in the process chamber; as well as The controller is connected to the multiple composite detection modules and is configured to determine the process environment of the heating plate surface based on the temperature and current collected by the multiple composite detection modules.

2. The detection device as described in claim 1, characterized in that, The plurality of composite detection modules include at least one first composite detection module distributed in the central region of the carrier disk, and a plurality of second composite detection modules distributed in the edge region of the carrier disk. The step of determining the plasma characteristics within the process chamber based on the temperature and current collected by the plurality of composite detection modules includes: The current distribution on the surface of the heating plate is determined based on the current collected by the multiple composite detection modules. The temperature distribution on the surface of the heating plate is determined based on the temperatures collected by the multiple composite detection modules; and Based on the current distribution and the temperature distribution, determine whether the process environment of the heating plate surface meets the standards.

3. The detection device as described in claim 2, characterized in that, The step of determining whether the process environment of the heating plate surface meets the standards based on the current distribution and the temperature distribution includes: Based on the current distribution, a reference current is determined, and the current deviation of each position on the surface of the heating plate relative to the reference current is determined. Based on the temperature distribution, a reference temperature is determined, and the temperature deviation of each position on the surface of the heating plate relative to the reference temperature is determined. In response to a current deviation at any of the locations being greater than or equal to a preset current deviation threshold, or a temperature deviation at any of the locations being greater than or equal to a preset temperature deviation threshold, it is determined that the process environment at the location is substandard.

4. The detection device as described in claim 3, characterized in that, The controller is also connected to the spray plate in the process chamber and is configured to: In response to the current deviation at each of the locations being less than the current deviation threshold, and the temperature deviation at any of the locations being greater than or equal to the temperature deviation threshold, the spray aperture at the corresponding location of the spray plate is reduced.

5. The detection device as described in claim 3, characterized in that, The controller is also connected to multiple radio frequency electrodes located within the heating plate and is configured to: In response to a current deviation at any of the said locations being greater than or equal to the current deviation threshold, and a temperature deviation at each of the said locations being less than the temperature deviation threshold, the power of the radio frequency electrode at the corresponding location of the heating plate is reduced.

6. The detection device as described in claim 3, characterized in that, The controller is also connected to an interaction interface and is configured to: In response to the fact that the process environment is not up to standard and is located at the edge of the heating plate, the insulation of the edge of the heating plate is determined to be faulty, and a signal to replace the edge insulation bushing is output to the interactive interface.

7. The detection device as described in claim 3, characterized in that, The step of determining whether the process environment of the heating plate surface meets the standards based on the current distribution and the temperature distribution further includes: In response to the current deviation at each of the aforementioned locations being less than the current deviation threshold and the temperature deviation at each of the aforementioned locations being less than the temperature deviation threshold, it is determined that the process environment on the surface of the heating plate meets the standard, and a prompt signal for performing the thin film deposition process is output.

8. The detection device as described in claim 1, characterized in that, The composite detection module includes: Coil bracket for fixing the coil; A coil, wound around the coil support, is used to collect current at multiple corresponding locations on the surface of the heating plate; and A thermocouple, located at the center of the coil support, is used to collect the temperature at multiple corresponding locations on the surface of the heating plate.

9. A thin film deposition apparatus, characterized in that, include: The process environment detection device as described in any one of claims 1 to 8; as well as The process chamber is equipped with at least a spray plate with adjustable spray orifice diameter, a removable spray plate, a heating plate with multiple radio frequency electrodes, or a removable edge insulating bushing.

10. A thin film deposition method, characterized in that, Includes the following steps: The process environment detection device as described in claims 1 to 8 is placed in the process chamber; The temperature and current at multiple locations on the surface of the heating plate in the process chamber are collected by the detection device, and the process environment on the surface of the heating plate is determined accordingly. as well as In response to the fact that the process environment on the surface of the heating plate meets the requirements, a thin film deposition process is performed on the wafer to be processed in the process chamber.

11. A computer-readable storage medium storing computer instructions thereon, characterized in that, When the computer instructions are executed by the controller, the thin film deposition method as described in claim 10 is implemented.

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