Surface treatment method of bearing substrate

Abstract

The surface treatment method of the bearing base body comprises the steps that the bearing base body is placed in a cavity, the cavity is controlled to be in a first vacuum degree, and a Cr layer is deposited on the surface of the bearing base body through magnetron sputtering ion plating; keeping the chamber at the first vacuum degree, and depositing a CrC layer on the Cr layer; and reducing the first vacuum degree to enable the chamber to be in a second vacuum degree, and depositing a Cr / Ag / DLC composite layer on the CrC layer. According to the method, multiple layers of protective films are formed on the surface of the bearing substrate, and the protective films have a relatively strong inhibition effect on viruses and germs, so that the carrier and carrier inclusions can be protected and the stable chemical performance of the carrier and the carrier inclusions can be ensured when the protective films are applied to carriers such as a tray.

Description

Technical Field

[0001] This invention relates to the field of thin film manufacturing, and more particularly to a surface treatment method for a substrate. Background Technology

[0002] In industrial applications, there are certain requirements for the antibacterial and disinfecting properties of chemical or medical trays. For example, medical trays may come into contact with patient wounds, medications, surgical instruments, etc. Regularly disinfecting medical trays can effectively kill germs and bacteria, ensure the cleanliness and hygiene of medical equipment and supplies, and help prevent hospital-acquired infections and the spread of diseases.

[0003] Nevertheless, higher requirements are placed on the substrate of these trays. When the trays hold various samples, their surfaces need to have a certain inhibitory effect on viruses and bacteria.

[0004] Therefore, it is necessary to provide an improved surface treatment method for the substrate to enhance its ability to inhibit pathogens on the surface of the substrate. Summary of the Invention

[0005] The purpose of this invention is to provide a surface treatment method for a carrier substrate. This method forms a multi-layer protective film on the surface of the carrier substrate. These protective films have a strong inhibitory effect on viruses and bacteria. When applied to carriers such as trays, they can protect the carrier and its contents and ensure their stable chemical properties.

[0006] To achieve the above objectives, the surface treatment method for the support substrate of the present invention includes the following steps:

[0007] The substrate is placed in the chamber, and the chamber is controlled to be at the first vacuum level. A Cr layer is deposited on the surface of the substrate by magnetron sputtering ion plating.

[0008] Maintaining the chamber at the first vacuum level, a CrC layer is deposited on the Cr layer; and

[0009] The first vacuum level is reduced to a second vacuum level in the chamber, and a Cr / Ag / DLC composite layer is deposited on the CrC layer.

[0010] Compared with existing technologies, the surface treatment method for the carrier substrate in this invention first forms a Cr layer by magnetron sputtering ion plating within a chamber. Then, by controlling the vacuum level in the chamber, a CrC layer and a Cr / Ag / DLC composite layer are formed sequentially. The Cr / Ag / DLC composite layer, as the outermost layer, comes into direct contact with chemicals and medical supplies during application. This composite layer exhibits strong inhibitory effects against viruses and bacteria, while also possessing antioxidant and anti-corrosion properties, protecting the carrier and its contents and ensuring stable chemical properties. Furthermore, by optimizing and adjusting the vacuum level within the chamber, efficient and rapid film deposition can be achieved, simplifying the film formation steps and making the method simpler, more efficient, and less costly, suitable for widespread industrial application.

[0011] As one embodiment, the first vacuum degree is 2.0 × 10⁻⁶. -3 -3.0×10 -3 Pa.

[0012] As one example, the second vacuum degree is 1.0 × 10⁻⁶. -3 -1.5×10 -3 Pa.

[0013] As an example, depositing the Cr layer includes introducing argon gas into the chamber under the first vacuum level and controlling the gas pressure in the chamber to be 1.8-2.0 Pa.

[0014] As an example, depositing the Cr layer further includes controlling the Cr target current to be 2.0-2.5A, the bias voltage to be 180-220V, and the bias frequency to be 250-380kHz.

[0015] As an example, depositing the CrC layer includes controlling the column arc current of the Cr target to be 10-1.5A, the bias voltage to be 120-150V, and the power supply of the C target to be 20-30KW.

[0016] As an example, depositing the Cr / Ag / DLC composite layer includes introducing nitrogen gas into the chamber under the second vacuum level, and controlling the gas pressure in the chamber to be 0.5-1.0 Pa.

[0017] As an example, the deposition of the Cr / Ag / DLC composite layer further includes controlling the Cr target current, Ag target current and C target current to be 1.5-3.5A, the bias voltage to be 180-220V, and the bias frequency to be 150-200kHz.

[0018] As an example, among the Cr layer, CrC layer and Cr / Ag / DLC composite layer, the Cr / Ag / DLC composite layer has the largest thickness, and the Cr layer has the smallest thickness. Detailed Implementation

[0019] To make the above-mentioned objectives, features, and advantages of this application more apparent and understandable, the specific implementation methods of this application are described in detail below with reference to some embodiments. Many specific details are set forth in the following description to provide a thorough understanding of this application. However, this application can be implemented in many other ways different from those described herein, and those skilled in the art can make similar modifications without departing from the spirit of this application. Therefore, this application is not limited to the specific embodiments disclosed below.

[0020] In the description of this application, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of that feature. In the description of this application, "multiple" means at least two, such as two, three, etc., unless otherwise explicitly specified.

[0021] In this application, unless otherwise expressly specified and limited, "above" or "below" the second feature can mean that the first feature is in direct contact with the second feature, or that the first feature is in indirect contact with the second feature through an intermediate medium. Furthermore, "above," "on top of," and "over" the second feature can mean that the first feature is directly above or diagonally above the second feature, or simply that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature can mean that the first feature is directly below or diagonally below the second feature, or simply that the first feature is at a lower horizontal level than the second feature.

[0022] It should be noted that when an element is referred to as being "fixed to" or "set on" another element, it can be directly on the other element or there may be an intervening element. When an element is considered to be "connected to" another element, it can be directly connected to the other element or there may be an intervening element. The terms "vertical," "horizontal," "upper," "lower," "left," "right," and similar expressions used herein are for illustrative purposes only and do not represent the only possible implementation.

[0023] The surface treatment method for the carrier substrate of the present invention will be further described below with reference to embodiments, but this does not limit the present invention. The method of the present invention aims to provide a surface treatment method for a carrier substrate, which forms a multilayer protective film on the surface of the carrier substrate. These protective films have a strong inhibitory effect on viruses and bacteria. When applied to carriers such as trays, they can protect the carrier and its contents, and ensure their stable chemical properties.

[0024] In one embodiment of the surface treatment method for the support substrate of the present invention, the method includes the following steps:

[0025] The substrate is placed in the chamber, and the chamber is controlled to be at the first vacuum level. A Cr layer is deposited on the surface of the substrate by magnetron sputtering ion plating.

[0026] Maintaining the chamber at the first vacuum level, a CrC layer is deposited on the Cr layer; and

[0027] The first vacuum level is reduced to a second vacuum level in the chamber, and a Cr / Ag / DLC composite layer is deposited on the CrC layer.

[0028] In the surface treatment method of the carrier substrate of the present invention, a Cr layer is first formed by magnetron sputtering ion plating on the carrier substrate in a chamber. Then, by controlling the vacuum degree of the chamber, a CrC layer and a Cr / Ag / DLC composite layer are formed sequentially. The Cr / Ag / DLC composite layer, as the outermost layer, comes into direct contact with chemicals and medical supplies during application. This composite layer has a strong inhibitory effect on viruses and bacteria, and also has antioxidant and anti-corrosion properties, protecting the carrier and its contents and ensuring its stable chemical properties. Furthermore, by optimizing the control and adjustment of the vacuum degree in the chamber, efficient and rapid film deposition can be achieved, simplifying the film formation steps and making the method simpler, more efficient, and less costly, making it suitable for widespread industrial application.

[0029] In one specific implementation, firstly, the substrate is placed inside the chamber, and a Cr layer is deposited using magnetron sputtering ion plating. Specifically, the initial vacuum level of the chamber is controlled to be 2.0 × 10⁻⁶. -3 -3.0×10 -3 Pa. Then, argon gas (Ar, purity 99.99%) is introduced to control the chamber pressure at 1.8-2.0 Pa. Under these conditions, the Cr target current is controlled at 2.0-2.5 A, the bias voltage at 180-220 V, and the bias frequency at 250-380 kHz for deposition. In this embodiment, the thickness of the Cr layer is approximately 4-7 μm. This Cr layer serves as the bottom bonding layer, and its thickness is the smallest among the three coating layers to facilitate the bonding of subsequent layers.

[0030] Next, after the Cr layer is prepared, the initial vacuum level in the chamber is kept constant. The arc current of the Cr target is controlled at 10-1.5A, the bias voltage at 120-150V, and the control power supply of the planar C target is turned on, controlling the power of the C target at 20-30KW. Thus, a CrC transition layer is deposited on the Cr layer. Preferably, the thickness of this CrC layer is 8-10µm. This CrC layer serves as an intermediate transition layer in the three-layer coating, and its thickness should not be too large.

[0031] Next, a Cr / Ag / DLC composite layer was deposited on the CrC layer using magnetron sputtering ion plating. As is well known, DLC stands for diamond-like carbon. In this deposition process, the vacuum level in the chamber was adjusted to 1.0 × 10⁻⁶.-3 -1.5×10 -3 The pressure is set at 0.5-1.0 Pa to facilitate the deposition of the composite layer. Nitrogen gas is introduced into the chamber at this vacuum level, controlling the chamber pressure to be 0.5-1.0 Pa. Three targets (Cr, Ag, and C carbon targets) are used for sputtering, with target currents controlled at 1.5-3.5 A (e.g., 3.0 A for Cr, 2.0 A for Ag, and 2.5 A for C), a bias voltage of 180-220 V, and a bias frequency of 150-200 kHz. The resulting Cr / Ag / DLC composite layer is approximately 15-20 μm thick. This Cr / Ag / DLC composite layer, being the outermost and thickest layer, exhibits excellent bactericidal and bacteriostatic properties.

[0032] In summary, the surface treatment method for the carrier substrate of the present invention first involves magnetron sputtering ion plating to form a Cr layer on the carrier substrate within a chamber. Then, by controlling the vacuum level of the chamber, a CrC layer and a Cr / Ag / DLC composite layer are sequentially formed. The Cr / Ag / DLC composite layer, as the outermost layer, directly contacts the chemicals and medical supplies during application. This composite layer exhibits strong inhibitory effects against viruses and bacteria, while also possessing antioxidant and anti-corrosion properties, protecting the carrier and its contents and ensuring stable chemical properties. Furthermore, by optimizing and adjusting the vacuum level within the chamber, efficient and rapid film deposition can be achieved, simplifying the film formation steps and making the method simpler, more efficient, and less costly, making it suitable for widespread industrial application.

[0033] The above-disclosed embodiments are merely preferred embodiments of the present invention and should not be construed as limiting the scope of the present invention. Therefore, any equivalent variations made in accordance with the claims of the present invention are still within the scope of the present invention.

Claims

1. A surface treatment method for a carrier substrate, characterized in that, Includes the following steps: The substrate is placed in the chamber, and the chamber is controlled to be at the first vacuum level. A Cr layer is deposited on the surface of the substrate by magnetron sputtering ion plating. Maintaining the chamber at the first vacuum level, a CrC layer is deposited on the Cr layer; as well as The first vacuum level is reduced to a second vacuum level in the chamber, and a Cr / Ag / DLC composite layer is deposited on the CrC layer.

2. The surface treatment method for the carrier substrate as described in claim 1, characterized in that, The first vacuum degree is 2.0 × 10⁻⁶. -3 -3.0×10 -3 Pa.

3. The surface treatment method for the carrier substrate as described in claim 1, characterized in that, The second vacuum degree is 1.0 × 10⁻⁶. -3 -1.5×10 -3 Pa.

4. The surface treatment method for the carrier substrate as described in claim 1, characterized in that, The deposition of the Cr layer includes introducing argon gas into the chamber under the first vacuum level and controlling the gas pressure in the chamber to be 1.8-2.0 Pa.

5. The surface treatment method for the carrier substrate as described in claim 4, characterized in that, The deposition of the Cr layer also includes controlling the Cr target current to be 2.0-2.5A, the bias voltage to be 180-220V, and the bias frequency to be 250-380kHz.

6. The surface treatment method for the carrier substrate as described in claim 1, characterized in that, The deposition of the CrC layer includes controlling the column arc current of the Cr target to be 10-1.5A, the bias voltage to be 120-150V, and the power supply of the C target to be 20-30KW.

7. The surface treatment method for the carrier substrate as described in claim 1, characterized in that, Depositing the Cr / Ag / DLC composite layer includes introducing nitrogen gas into the chamber under the second vacuum level, and controlling the gas pressure in the chamber to be 0.5-1.0 Pa.

8. The surface treatment method for the carrier substrate as described in claim 7, characterized in that, The deposition of the Cr / Ag / DLC composite layer also includes controlling the Cr target current, Ag target current and C target current to be 1.5-3.5A, the bias voltage to be 180-220V, and the bias frequency to be 150-200kHz.

9. The surface treatment method for the support substrate as described in claim 1, characterized in that, Of the Cr layer, CrC layer, and Cr / Ag / DLC composite layer, the Cr / Ag / DLC composite layer has the largest thickness, and the Cr layer has the smallest thickness.