Treatment device, pretreatment device, and mounting system

Abstract

The invention provides a processing device and a mounting device capable of preventing a mask from being attached to an adhesive sheet. A processing apparatus (plasma processing apparatus 100) according to an embodiment includes: a stage 20 on which a component supply body TW having a wafer W attached to an adhesive sheet T is placed; a chamber (11b) capable of decompressing the inside thereof; a gas introduction port (30) for introducing a reaction gas into the chamber (11b); a plasma generator (40) that generates an active species by converting the reaction gas into plasma; a mask 50 covering the ring R and a region between the ring R and the wafer W in the adhesive sheet T; and an ultraviolet irradiation unit (23) that irradiates ultraviolet light to the adhesive sheet (T) so as to reduce the adhesive force of the adhesive sheet (T) between the ring (R) and the wafer (W) before the covering of the mask (50) is released from the component supply body (TW).

Description

Technical Field

[0001] This invention relates to a processing apparatus, a pre-processing apparatus, and an installation system. Background Technology

[0002] Direct bonding is a method for mounting electronic components such as semiconductor chips onto a mounting substrate. Direct bonding is a method that directly and tightly connects the mounting substrate and the connection terminals of the electronic components to each other through solid-state bonding without using bonding members (adhesives) such as solder bumps. Therefore, the influence of bonding members is not considered, allowing for narrow connection terminal spacing and the fabrication of high-density packages. Semiconductor chips are electronic components formed by monolithically mounting wafers, and are sometimes supplied by attaching them to an adhesive sheet mounted on a ring. This component, including the wafer with the attached wafer and the ring, is called a component supply body. Furthermore, the wafer on which the electronic component is mounted after being detached from the component supply body is called a mounting substrate.

[0003] When electronic components are directly bonded to a mounting substrate, a pretreatment process is performed on both the electronic components and the mounting substrate beforehand. This pretreatment includes surface treatments or cleaning processes such as activation treatment and cleaning treatment. Activation treatment utilizes reactive species such as ions and free radicals generated by plasma atomizing a reactive gas to activate the surfaces of the electronic components and the mounting substrate. Activation refers to breaking the chemical bonds of molecules on the surface. Cleaning treatment utilizes the generated reactive species such as ions and free radicals to clean the surfaces of the electronic components and the mounting substrate. Cleaning refers to deflecting and removing particles adhering to the surface or decomposing and removing organic matter. In the following description, this surface treatment is sometimes referred to as plasma treatment. Cleaning treatment is the process of removing particles and other residues remaining on the surfaces of the electronic components and the mounting substrate.

[0004] Existing technical documents

[0005] Patent documents

[0006] Patent Document 1: Japanese Patent Application Publication No. 2020-021966 Summary of the Invention

[0007] The problem that the invention aims to solve

[0008] When the component supply is subjected to plasma treatment during pretreatment, the wafer, ring, and exposed portions of the wafer-attached sheet are exposed to the plasma. This can potentially cause contamination of the electronic components due to the dispersion and adhesion of active species from organic matter on the surface of the sheet or ring, or from the metal forming the ring. To address this, the active species are shielded by covering the ring and the area outside the ring and wafer (exposed portions) with a mask.

[0009] However, if the gap between the mask and the sheet is too large when using a mask to cover the part, the active species can enter through the gap and cannot be adequately masked. If the gap between the mask and the sheet is eliminated or narrowed, the sheet may sometimes stick to the mask, resulting in a situation where the part supply cannot be removed.

[0010] The purpose of this invention is to provide a processing apparatus, a pretreatment apparatus, and an installation system that can prevent masks from adhering to adhesive sheets.

[0011] Technical means to solve the problem

[0012] The processing apparatus of the embodiment includes: a stage for holding a component supply body, the component supply body having a wafer monolithized into an electronic component attached to an adhesive sheet mounted on a ring; a chamber for providing the stage and capable of depressurizing the interior; a gas inlet for introducing a reactive gas into the depressurized chamber; a plasma generator for generating active species by plasmaizing the reactive gas; a mask for exposing the wafer and covering the area between the ring and the wafer in the ring and the adhesive sheet; and an ultraviolet irradiation unit for irradiating the adhesive sheet with ultraviolet light before removing the mask covering the component supply body from the component supply body covered by the mask in order to expose the component supply body to the active species, so as to reduce the adhesive force of the adhesive sheet between the ring and the wafer.

[0013] The processing apparatus of the embodiment includes: a stage for holding a component supply body, the component supply body having a wafer monolithized into an electronic component attached to an adhesive sheet mounted on a ring; a chamber for the stage, capable of depressurizing the interior; a gas inlet for introducing a reactive gas into the depressurized chamber; a plasma generator for generating active species by plasmaizing the reactive gas; and a mask for exposing the wafer and covering the area between the ring and the wafer in the ring and the adhesive sheet, the portion of the mask directly facing the adhesive sheet having a protrusion with a curved or flat front end.

[0014] The pre-processing apparatus of the embodiment includes: the processing apparatus; a loading port for mounting a transport container containing the part supply body; a supply body cleaning unit for cleaning the part supply body; a mounting substrate cleaning unit for cleaning the mounting substrate; and a transport unit for transporting the part supply body.

[0015] The mounting system of the embodiment includes: the pre-processing device; and a joint for disengaging the electronic component from the component supply body processed by the pre-processing device and mounting it on the mounting substrate.

[0016] The effects of the invention

[0017] The embodiments of the present invention can prevent the mask from adhering to the adhesive sheet. Attached Figure Description

[0018] [ Figure 1 [ ] is an explanatory diagram showing the processing of each part of the installation system in the implementation method.

[0019] [ Figure 2 [ ] is a simplified perspective plan view showing the structure of the installation system in the implementation method.

[0020] [ Figure 3 [] is a cross-sectional view of the processing apparatus of the first embodiment.

[0021] [ Figure 4 (A) is a plan view showing the part supply body of the plasma processing device being moved in / out, (B) is a cross-sectional view of (A) from arrow aa, and (C) is a cross-sectional view of (A) from arrow bb.

[0022] [ Figure 5 (A) is a cross-sectional view showing the mounting substrate being moved in / out of the plasma processing apparatus and rising relative to the stage. (B) is a cross-sectional view showing the mounting substrate being placed on the stage.

[0023] [ Figure 6 (A) is a cross-sectional view showing the rod-based part feeder in the plasma processing device receiving / transferring with respect to the robot arm; (B) is a cross-sectional view showing the robot arm retracting; (C) is a cross-sectional view showing the part being placed on the platform; and (D) is a cross-sectional view showing the mask descending.

[0024] [ Figure 7 [] is a cross-sectional view of the mask as it descends, showing the force applied by the force-applying component.

[0025] [ Figure 8 [This is a simplified structural diagram showing the supply body cleaning section and the mounting substrate cleaning section of the mounting device.]

[0026] [ Figure 9[] is a flowchart representing the action flow of the implementation method.

[0027] [ Figure 10 [ ] is an explanatory diagram representing the flow of active species.

[0028] [ Figure 11 (A) is a cross-sectional view showing a modified example of a mask with an ultraviolet irradiation section during ultraviolet irradiation, and (B) is a cross-sectional view showing the mask descending.

[0029] [ Figure 12 [] is a cross-sectional view showing the case where the bottom surface of the hole is set as a mask stop.

[0030] [ Figure 13 (A) is a cross-sectional view showing the part supply being moved in / out in the second embodiment where an ultraviolet irradiation unit is provided in the measurement section; (B) is a cross-sectional view showing the part supply being received / transmitted; (C) is a cross-sectional view showing the part supply being placed on the platform; and (D) is a cross-sectional view showing ultraviolet irradiation.

[0031] [ Figure 14 (A) represents the part supply body relative to Figure 13 (A) is a plan view of the ultraviolet irradiation unit and the mask before mounting in the embodiment, and (B) is a plan view after mounting.

[0032] [ Figure 15 [This is a cross-sectional view showing the loading of the parts supply unit in the third embodiment, which has an ultraviolet irradiation section in the measurement section.]

[0033] [ Figure 16 [] indicates that as Figure 15 An explanatory diagram illustrating the process of loading a part supply body and subjecting it to ultraviolet irradiation based on an ultraviolet irradiation unit in an embodiment of the present invention.

[0034] [ Figure 17 (A) is a cross-sectional view showing a modified example of an ultraviolet irradiation section installed in the measurement department under ultraviolet irradiation, and (B) is a plan view.

[0035] [ Figure 18 [ ] is an explanatory diagram showing the fourth embodiment in which an ultraviolet irradiation unit is provided in the adjustment and processing unit.

[0036] [ Figure 19 (A) is an enlarged cross-sectional view showing the state in which the mask of the fifth embodiment, which has a protrusion with a curved front end in the part directly facing the adhesive sheet, is far away from the adhesive sheet; (B) is an enlarged cross-sectional view showing the state in which it is in contact with the adhesive sheet.

[0037] [ Figure 20(A) is an enlarged cross-sectional view showing a deformed example of a mask with a protrusion at the front end that is directly opposite the adhesive sheet, in a state away from the adhesive sheet. (B) is an enlarged cross-sectional view showing a state in contact with the adhesive sheet.

[0038] [ Figure 21 (A) is a cross-sectional view showing the state in which a mask with an inclined surface is provided in the part directly facing the adhesive sheet and is in contact with the adhesive sheet, and (B) is an enlarged cross-sectional view of (A).

[0039] [ Figure 22 (A) is an enlarged cross-sectional view of a modified mask with an inclined surface provided in the part directly opposite the adhesive sheet, where the front end is set as a plane; (B) is an enlarged cross-sectional view of a mask with an uneven surface provided in the front end.

[0040] [ Figure 23 [] is a cross-sectional view showing the fifth embodiment without an ultraviolet irradiation section. Detailed Implementation

[0041] Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. Furthermore, the drawings are schematic diagrams, and the dimensions, proportions, etc., of each part include exaggerated portions for ease of understanding.

[0042] [First Implementation Method]

[0043] [summary]

[0044] like Figure 1 , Figure 2 As shown, the mounting system 1 of this embodiment is an example of a system in which the part supply TW and the mounting substrate BW, which are to be processed, are preprocessed by the preprocessing unit X, and the electronic part E (semiconductor chip) picked up from the part supply TW is mounted on the mounting substrate BW by the mounting unit Y.

[0045] like Figure 1 As shown, a component supply body TW has a wafer (semiconductor wafer) W attached to an adhesive sheet T mounted on a ring R. The wafer W is then monolithically processed into an electronic component E (semiconductor chip). The adhesive sheet T is a thin, stretchable component with an adhesive surface; its adhesive strength can be reduced by exposure to ultraviolet (UV) light. In the following description, the processing of the component supply body TW refers to the processing of the electronic component E. The mounting substrate BW is used to bond (mount) the wafer (semiconductor wafer) W to the electronic component E, which has detached from the component supply body TW.

[0046] like Figure 2As shown, the mounting system 1 of this embodiment is an apparatus that pre-processes (activation treatment, cleaning treatment, washing treatment) one by one the component supply units TW and mounting substrates BW that are housed in transport containers F such as front-opening unified pods (FOUP) and front-opening shipping boxes (FOSB) and is transported therein in the previous process, and then mounts the electronic components E.

[0047] The mounting system 1 is configured by arranging multiple chambers 11b, which are box-shaped containers, around a base 11a, each containing devices for performing various processes. A loading port 11c is provided in the base 11a for mounting a transfer container F. The transfer container F, containing unprocessed part supplies TW and mounting substrates BW, is mounted in the loading port 11c, and the part supplies TW and mounting substrates BW are removed one by one from the transfer container F by the transfer unit 190, thereby performing loading, processing, and unloading relative to each chamber 11b. Furthermore, a fan filter unit (FFU) (not shown) is provided on the top plate of the base 11a to generate a downflow of clean air, thereby maintaining a clean environment inside the base 11a. This FFU may also be provided in the chambers 11b as needed.

[0048] The mounting system 1 of this embodiment includes: a pre-processing unit X, which performs pre-processing including activation, cleaning, and rinsing of electronic component E; a buffer unit, which temporarily houses the component supply TW and the mounting substrate BW; and a bonding unit, which mounts the electronic component E onto the mounting portion Y of the mounting substrate BW. Furthermore, the buffer unit may also be included in the pre-processing unit X.

[0049] More specifically, the mounting system 1 of this embodiment is a system including a plasma processing device 100, a supply cleaning unit 110, a mounting substrate cleaning unit 120, an adjustment processing unit 130, a measurement unit 140, an alignment unit 150, a supply buffer unit 160, a mounting substrate buffer unit 170, a joining unit 180, a conveying unit 190, and a control unit 200.

[0050] The pretreatment apparatus comprises a plasma processing unit (surface treatment section) 100, a supply cleaning section 110, a mounting substrate cleaning section 120, an adjustment processing section 130, a measurement section 140, and an alignment section 150. A buffer unit comprises a supply buffer section 160 and a mounting substrate buffer section 170. A joining section 180 constitutes a joining device. The apparatus is configured to exchange the part supply TW and mounting substrate BW with respect to each device via a conveying device that serves as a conveying section 190. Furthermore, each device is controlled by a control section 200, thereby constituting the mounting system 1. As described above, the buffer units (supply buffer section 160 and mounting substrate buffer section 170) can be included in the pretreatment apparatus.

[0051] [Plasma Processing Device]

[0052] The plasma processing apparatus 100 is a device (surface processing unit) for surface processing of the component supply body TW and the mounting substrate BW. Surface processing is a process of modifying (activating, cleaning) the surfaces of the component supply body TW and the mounting substrate BW that are joined together. This modification is achieved by introducing a reactive gas into a depressurized chamber, applying electricity to the reactive gas, and plasmaifying it, thereby irradiating the joined surfaces of the component supply body TW or the mounting substrate BW with the generated ions or free radicals. The plasma processing apparatus 100 can be considered a processing device.

[0053] like Figure 3 As shown, the plasma processing apparatus 100 of this embodiment is provided with a stage 20, a gas inlet 30, a plasma generator 40, a mask 50, and an exhaust port 60 in a chamber 11b capable of depressurizing the interior. Furthermore, a transfer / inlet LN for transferring the component supply body TW or mounting substrate BW is provided in the chamber 11b, and the transfer / inlet LN is configured to be openable and closed by a stop gate SH. Figure 3 In the diagram, dashed lines represent the loading / unloading entrance (LN), and dotted lines represent the door blocking (SH).

[0054] (Platform)

[0055] The stage 20 is used to hold component suppliers TW or mounting substrates BW that are moved into the chamber 11b via a loading / unloading inlet LN opened by a gate SH. In this embodiment, the stage 20 is a mounting area formed on the inner bottom surface of the chamber 11b. In the following description, the side of the component supplier TW on the stage 20 with the attached electronic component E is designated as the upper side, and the opposite side is designated as the lower side.

[0056] A drive unit 21 is provided on the stage 20 for raising and lowering the part supply body TW or the mounting substrate BW. The drive unit 21 includes rods 21a and 21b, and a drive mechanism 21c. Rods 21a and 21b are vertical rod-shaped members that can move up and down and airtightly through the bottom of the chamber 11b. Multiple rods 21a are arranged at positions that can support the lower surface of the part supply body TW. More specifically, they support a portion of the lower surface of the ring R. Rods 21a are the first rods for mounting the part supply body TW relative to the chamber 11b as it is moved in and out. Multiple rods 21b are arranged at positions that can support the lower surface of the mounting substrate BW as it is moved in and out of the chamber 11b. Rods 21b are the second rods for mounting the mounting substrate BW relative to the chamber 11b as it is moved in and out.

[0057] In this embodiment, the mounting substrate BW is smaller than the component supply body TW. Therefore, the mounting substrate BW needs to be supported further inward than the component supply body TW. Therefore, the rod 21b is configured to be located further inward than the rod 21a. Thus, the plasma processing apparatus 100 can process both the component supply body TW and the mounting substrate BW.

[0058] like Figure 4 As shown in (A) to (C), in this embodiment, three rods 21a are arranged at equal intervals along the inner side of the outer circumference of the part supply body TW. Furthermore, as... Figure 4 (A) Figure 5 As shown in (A) and (B), three rods 21b are arranged at equal intervals along the inner side of the outer circumference of the mounting base BW. Furthermore, Figure 4 (B) is Figure 4 (A) aa arrow view section, Figure 4 (C) is Figure 4 (A) is a cross-sectional view of the arrow. Additionally, in Figures 3-7 , Figures 10-12 , Figure 23 In order to make the action easier to understand, rods 21a, 21b, rod 51a (described later), or support shaft 50a, etc., which would not appear in the actual cross-section, are shown in the figure.

[0059] The drive mechanism 21c raises and lowers the part supply body TW and the mounting base BW by moving rods 21a and 21b up and down. For example, a cylinder can be used as the drive mechanism 21c. However, the drive mechanism 21c is not limited to this; any mechanism that can move rods 21a and 21b, such as a hydraulic cylinder or a ball screw mechanism, is acceptable.

[0060] Furthermore, such as Figure 3 , Figure 4As shown in (C), the stage 20 in this embodiment is provided with an ultraviolet irradiation unit 23. The ultraviolet irradiation unit 23 irradiates the adhesive sheet T with UV light to reduce the adhesion between the ring R and the wafer W. This irradiation is performed before removing the mask 50 from the part supply body TW covered by the mask 50 in order to expose the part supply body TW to the active species. The ultraviolet irradiation unit 23 has a plurality of light sources arranged along the annular portion between the ring R and the wafer W. As a light source, a light-emitting diode (LED) element that outputs UV light is used, for example.

[0061] In this embodiment, the ultraviolet irradiation unit 23 is embedded in the lower part of the stage 20, i.e., the bottom of the chamber 11b, using LED elements arranged in a ring. The ring portion between the ring R and the wafer W faces the lower surface of the adhesive sheet T. The ultraviolet irradiation unit 23 is connected to the control unit 200 (described later), and the timing of light emission is controlled by the control unit 200. Furthermore, the ultraviolet irradiation unit 23 irradiates UV light onto the surface of the adhesive sheet T opposite to the adhesive surface where the wafer W is attached. The UV light passes through the adhesive sheet T and reaches the adhesive surface, thus reducing the adhesive force.

[0062] (Gas inlet)

[0063] The gas inlet 30 is an opening for introducing the reaction gas into the depressurized chamber 11b. The gas inlet 30 is located on the side of the chamber 11b to allow the reaction gas to be introduced upwards onto the stage 20. The gas inlet 30 is connected to a supply device 31 via a pipe 31a. The supply device 31 supplies the reaction gas into the chamber 11b from the gas inlet 30. For example, N2 gas is used as the reaction gas. Other reaction gases may include rare gases such as He, Ar, and Ne, oxygen, and hydrogen. Water vapor may also be added. By using these reaction gases, cleaning of the surface of the object to be treated by removing organic matter, and surface activation such as cutting off the SiO2 connector, can be performed. Furthermore, the addition of water vapor can impart hydroxyl groups to the surface. Hereinafter, the space for introducing the reaction gas will be referred to as the gas space GA.

[0064] (Plasma generator)

[0065] The plasma generator 40 generates active species by plasmaizing the reactive gas. These active species activate or clean the surfaces of the component supply TW and the mounting substrate BW by irradiating them. Figure 3As shown, the plasma generator 40 includes an antenna 41, a power supply 42, and a matching box 43. The antenna 41 is disposed outside the chamber 11b and at a position corresponding to the upper part of the gas space GA. A window member 11d is disposed in the chamber 11b between the antenna 41 and the gas space GA. The window member 11d is a dielectric material such as quartz. The antenna 41 generates plasma P based on inductive coupling in the gas space GA via the window member 11d by applying a high-frequency voltage.

[0066] Power supply 42 is connected to antenna 41, applying a high-frequency voltage to antenna 41. Matching box 43 is a matching circuit connected between power supply 42 and antenna 41. Matching box 43 stabilizes the discharge of plasma P by matching the impedance of the input and output sides.

[0067] (mask)

[0068] like Figure 3 and Figure 4 As shown, the mask 50 is disposed within the cavity 11b, exposing the wafer W and covering the ring R and a portion of the adhesive sheet T in a manner away from the adhesive sheet T. Furthermore, in Figure 4 In (A), rods 21a and 21b are located below the mask 50 and are represented by solid lines for ease of understanding. The mask 50 is configured to surround the wafer W attached to the center of the ring R. More specifically, the mask 50 is an annular member that covers the exposed surface of the adhesive sheet T outside the area where the wafer W is attached and the upper surface of the ring R. The inner diameter of the mask 50 is preferably set to be greater than the outer diameter of the wafer W and the size covered by the mask 50 for the exposed surface of the adhesive sheet T not attached to the wafer W, so that the wafer W is exposed. The mask 50 is preferably made of a material with a low sputtering rate based on plasma P, such as quartz, or is made of special use stainless steel (SUS) through a yttrium oxide coating surface treatment to prevent it from becoming a source of contamination for the wafer W.

[0069] Furthermore, if the position of the wafer W is offset, and if it is assumed that the inner diameter of the mask 50 is the same as the outer diameter of the wafer W, the following state occurs: the outer edge of the wafer W is covered in the direction of offset, while the adhesive sheet T near the outer edge of the wafer W is not covered in the opposite direction.

[0070] In this case, to minimize the occurrence of uncovered wafer T, consider making the inner diameter of mask 50 smaller than the outer diameter of wafer W. At this point, it's necessary to consider the impact of electronic components E located at the periphery of wafer W on the processing. Of course, even if wafer T is left uncovered, the impact from exposure to active materials is acceptable as long as it remains within acceptable limits.

[0071] Therefore, regarding the inner diameter of the mask 50 relative to the outer diameter of the wafer W, considering the attachment accuracy of the wafer W relative to the ring R or the balance between plasma processing and particle suppression, a certain range of size relative to the outer diameter is also appropriate. That is, the inner diameter of the mask 50 is not limited to being the same as the outer diameter of the wafer W.

[0072] like Figure 5 As shown, the portion of the mask 50 directly facing the adhesive sheet T between the ring R and the wafer W has a protrusion 501 that protrudes toward the adhesive sheet T. "Directly facing" means that the adhesive sheet T and the mask 50 face each other without any other components between them. The protrusion 501 is annular, with an inner diameter larger than the outer diameter of the wafer W and an outer diameter smaller than the inner diameter of the ring R. The lower end face of the protrusion 501 is a facing surface 502 that faces the upper surface of the adhesive sheet T parallel to it.

[0073] Mask 50 is configured to cover the area between ring R and wafer W in the cover ring R and adhesive sheet T (see reference). Figure 3 ), and the exposed position that exposes the area between the ring R and the wafer W in the adhesive sheet T (refer to Figure 4 (B) The mask 50 is movable between a position that covers both the ring R and a portion of the component supply body TW (the covered position, which is the blocked position) and a position that is uncovered (the uncovered position, which is the exposed position). As described later, this movement is achieved by raising and lowering the mask 50 via the drive unit 51. When the mask 50 is in the blocked position, the opposing surface 502 of the protrusion 501 enters between the wafer W and the ring R and approaches the adhesive sheet T. The exposed position is a position further away from the adhesive sheet T than the blocked position, and the height of the opposing surface 502 is a position higher than the upper surface of the ring R and the wafer W.

[0074] At the lower part of the mask 50, a plurality of support shafts 50a protrude along the inner side of the outer circumference of the mask 50. The support shafts 50a are inserted into holes 11e located at the bottom of the chamber 11b in a way that allows them to be raised and lowered. A stop 11f is provided at the upper edge of the hole 11e. The stop 11f is a protrusion formed to restrict the descent of the mask 50 to a predetermined height. In this embodiment, when the mounting substrate BW is placed, the stop 11f maintains the height of the mask 50 at the same height as when the mask 50 covers the part supply body TW. As will be described later, the support shafts 50a in this embodiment are divided into three support shafts SA for raising and lowering, and three support shafts SB for applying downward force (see reference). Figure 4 ).

[0075] The mask 50 is configured to be able to rise and fall via the drive unit 51. For example... Figure 4As shown in (B), the drive unit 51 has a rod 51a and a drive mechanism 51b. The rod 51a is a vertically oriented rod-shaped member that can move up and down and airtightly through the bottom of the chamber 11b.

[0076] Multiple rods 51a are arranged at positions that can support the lower surface of the mask 50. In this embodiment, three rods 51a protrude through holes 11e and contact three support shafts SA (50a) respectively.

[0077] like Figure 6 As shown in (A) to (D), the drive mechanism 51b raises and lowers the mask 50 by moving the rod 51a up and down. For example, a cylinder can be used as the drive mechanism 51b. However, the drive mechanism 51b is not limited to this; any mechanism that can move the rod 51a, such as a hydraulic cylinder or a ball screw mechanism, is acceptable.

[0078] like Figure 7 As shown, the support shaft SB (50a) is subjected to downward force by the force-applying member 11g provided in the hole 11e. Figure 7 Shown in Figure 7 The support shaft SA (50a), not shown in the diagram, descends while the mask 50 is grounded and stops on ring R. Figure 7 In the diagram, the dashed line indicates the state after the mask 50 is pushed upwards. In this embodiment, the force-applying member 11g is a tension spring that applies downward force to the mask 50, consisting of a spring post 11h with both ends locked in the through hole formed in the support shaft 50a (50a) and a spring post 11i provided in the hole 11e of the chamber 11b. Furthermore, the rod 51a does not contact the support shaft SB (50a). By applying downward force to the support shaft SB (50a), the support shaft SB (50a) is pressed against the rod 51a and brought into contact via the mask 50.

[0079] (Exhaust port)

[0080] like Figure 3 As shown, the exhaust port 60 is an opening for venting gas from the chamber 11b. In this embodiment, the exhaust port 60 is provided on the side of the chamber 11b. The exhaust port 60 is connected to an exhaust device 61 via a pipe 61a. The exhaust device 61 depressurizes the pressure inside the chamber 11b via the exhaust port 60. Additionally, reaction gases (see reference) are discharged from the chamber 11b. Figure 3 ).

[0081] [Supply Body Cleaning Department]

[0082] The supply body cleaning unit 110 is a processing apparatus for cleaning the component supply body TW. The supply body cleaning unit 110 uses a cleaning fluid L to clean particles remaining on the plasma-treated component supply body TW, or particles generated during plasma treatment. The cleaning targets are the surfaces of electronic components E, the spaces between electronic components E, and the surfaces of the adhesive sheets T; particles adhering to them are cleaned and removed. Figure 8 As shown, the supply body cleaning unit 110 includes: a cleaning chamber 111, which is a container for cleaning inside; a support 112, which supports the part supply body TW; a rotating mechanism 113, which rotates the support 112; a cup 114, which receives the scattered cleaning liquid L from around the part supply body TW; and a supply unit 115, which supplies the cleaning liquid L.

[0083] The cleaning chamber 111 is provided with an opening 111a for loading / unloading the part supply body TW. The opening 111a is configured to be opened and closed via a stop gate 111b. The part supply body TW is loaded / unloaded relative to the cleaning chamber 111 by the conveying unit 190 through the opening 111a opened via the stop gate 111b. At this time, the cup 114 is retracted by a lifting mechanism (not shown). An eccentric pin is included on the upper surface of the support 112 to rotatably hold the outer periphery of the part supply body TW. The supply unit 115 is provided with a nozzle 115a for dripping cleaning fluid L and a moving mechanism 115b for moving the nozzle 115a.

[0084] Cleaning is performed by supplying cleaning fluid L to the surface of the part supply body TW, which is held by the eccentric pin of the supported part 112 through the nozzle 115a and rotated by the rotating mechanism 113. The cleaning fluid L is, for example, deionized water (DIW).

[0085] Furthermore, although not shown, the rotation mechanism 113 of the supply body cleaning section 110 includes an extension section that extends (expands) the adhesive sheet T of the supply body cleaning section 110 supported by the support section 112 to increase the spacing between the electronic components E, thereby also cleaning the particles present in the spacing.

[0086] [Substrate Cleaning Section]

[0087] The mounting substrate cleaning unit 120 is a processing apparatus for cleaning the mounting substrate BW. The mounting substrate cleaning unit 120 uses a cleaning solution L to clean particles remaining on the plasma-treated mounting substrate BW or particles generated during plasma treatment. The mounting substrate cleaning unit 120 and... Figure 8The supply unit cleaning section 110 shown also includes: a cleaning chamber 111, which is a container for cleaning inside; a support section 112, which supports the mounting substrate BW; a rotation mechanism 113, which rotates the support section 112; a cup 114, which receives the scattered cleaning liquid L from around the mounting substrate BW; and a supply section 115, which supplies the cleaning liquid L. For example, when using DIW as the cleaning liquid L, water cleaning can also be performed, while simultaneously imparting hydroxyl groups to the surface of the mounting substrate BW.

[0088] [Adjustment Processing Department]

[0089] The adjustment processing unit 130 is a processing device that reduces the adhesive force of the adhesive sheet T by irradiating it with UV light on the component supply body TW. This is because it allows the electronic component E to be easily detached from the component supply body TW so that the electronic component E can be mounted on the mounting substrate BW. For example... Figure 1 As shown, the adjustment processing unit 130 has an irradiation device 131, which irradiates UV light by scanning the entire area below the housed part supply body TW with a UV light source.

[0090] [Planning and Surveying Department]

[0091] The measuring unit 140 is a processing device for positioning the part supply body TW. The measuring unit 140 is a contact-type centering device that adjusts the position by contacting the outer periphery of the part supply body TW so that the center of the part supply body TW is aligned with a reference position set inside.

[0092] [Alignment]

[0093] The alignment unit 150 is a processing device for positioning the mounting substrate BW. The alignment unit 150 is a non-contact (optical) centering device that adjusts the position of the mounting substrate BW so that the center of the mounting substrate BW is aligned with a reference position set inside.

[0094] [Supply Body Buffer Section]

[0095] The supply body buffer section 160 is a processing device that temporarily houses the part supply body TW before it is moved into the joint section 180. For example... Figure 1 As shown, the supply buffer section 160 has a storage container 161, which is capable of stacking and accommodating multiple part supplies TW at intervals.

[0096] [Mounting substrate buffer section]

[0097] The mounting substrate buffer section 170 is a processing device that temporarily houses the mounting substrates BW before they are moved into the joint section 180. The mounting substrate buffer section 170 has a storage container 171, which is capable of stacking and housing multiple mounting substrates BW at intervals.

[0098] [Joint]

[0099] The joining portion 180 is a processing chamber that detaches the electronic component E from the component supply body TW processed by the plasma processing apparatus 100 and mounts it onto the mounting substrate BW. The joining portion 180 includes a supply mechanism (not shown), a pick-up mechanism, and a mounting mechanism. The pick-up mechanism picks up the electronic component E from the component supply body TW, which is transported into the supply mechanism by the conveyor 190, and transfers it to the mounting mechanism, where it is mounted onto the mounting substrate BW, which is transported into the mounting mechanism by the conveyor 190. Furthermore, as... Figure 1 As shown, in this embodiment, the joint 180 reverses the picked-up electronic component E and mounts the pre-processed surface onto the surface of the pre-processed mounting substrate BW.

[0100] [Transportation Department]

[0101] The conveying unit 190 conveys the component supply body TW and the mounting base BW between the loading port 11c and each chamber 11b, between each chamber 11b, between the supply body buffer unit 160 and the mounting base buffer unit 170 and the connecting part 180. For example... Figure 2 As shown, the conveying unit 190 includes a conveying robot 191 and a moving mechanism 192. The conveying robot 191 is a dual-arm type with a pair of robotic arms 191a. The pair of robotic arms 191a can support the part supply body TW and the mounting base BW respectively. The moving mechanism 192 moves the conveying robot 191 and positions it at the loading port 11c, each chamber 11b, and the joint 180. The robotic arms 191a perform the loading and unloading of the part supply body TW and the mounting base BW relative to each conveying container F, each chamber 11b, and the joint 180.

[0102] [Control Department]

[0103] The control unit 200 is a computer that controls the various parts of the mounting system 1. The control unit 200 includes: a processor to execute programs; a memory to store various information such as programs or operating conditions; and drive circuits to drive the various components. Specifically, the control unit 200 controls the plasma processing apparatus 100, the supply cleaning unit 110, the mounting substrate cleaning unit 120, the adjustment processing unit 130, the measurement unit 140, the alignment unit 150, the supply buffer unit 160, the mounting substrate buffer unit 170, the joining unit 180, and the conveying unit 190. As will be shown in the operation description below, the control unit 200 also controls the timing of the ultraviolet irradiation unit 23.

[0104] [action]

[0105] In addition to the above Figures 1 to 8 In addition, refer to Figure 9 Flowchart, Figure 10The explanatory diagrams illustrate the operation of the mounting system 1 of this embodiment as described above. A mounting method for mounting electronic components E onto the mounting substrate BW via the following process is also a form of this embodiment. Furthermore, the following description is based on… Figure 9 The flowchart shows that each process includes states that occur simultaneously and in parallel.

[0106] like Figure 2 As shown, a transport container F containing a component supply body TW and a transport container F containing a mounting base plate BW are mounted on a loading port 11c. The transport robot 191 receives the component supply body TW from the transport container F mounted on the loading port 11c and transports the component supply body TW to the plasma processing device 100.

[0107] The plasma treatment apparatus 100 activates and cleans the surface of the electronic component E of the component supply body TW through plasma treatment (supply body surface treatment process: step S101). That is, as... Figure 4 As shown in (A) to (C), the gate SH opens, and the robotic arm 191a of the transport robot 191, which supports the part supply body TW, is inserted from the loading / unloading inlet LN, positioning the part supply body TW above the rod 21a. Furthermore, in Figure 4 In (A), rods 21a and 21b are located below mask 50 and are represented by solid lines for ease of understanding. Additionally, in Figure 4 In (C), the loading / unloading entrance LN is represented by a dashed line, and the blocking door SH is represented by a dotted line. Furthermore, at the stated time point, the blocking door SH moves downward, and the loading / unloading entrance LN opens.

[0108] If the part supply body TW is positioned, then as follows Figure 6 As shown in (A), the drive mechanism 21c raises the rod 21a to lift the part supply body TW from the robot arm 191a, and the rod 21a receives the part supply body TW from the robot arm 191a. Next, as... Figure 6 As shown in (B), the robotic arm 191a retreats, as... Figure 3 As shown, the baffle SH is closed. Then, a vacuum is created by venting the chamber 11b through the venting device 61.

[0109] like Figure 6 As shown in (C), the drive mechanism 21c lowers the rod 21a to place the part supply body TW on the stage 20. At this time, the mask 50 is in the exposed position. In this state, the ultraviolet irradiation unit 23 begins to irradiate the adhesive sheet T with UV light. Then, irradiation continues until the time required for the adhesive force to disappear has elapsed. As a result, the adhesive force in the area between the ring R in the adhesive sheet T and the wafer W (the shaded area in the figure) is reduced.

[0110] Furthermore, such as Figure 6As shown in (D), the mask 50 is lowered by the force applied by the force-applying member 11g, caused by the downward movement of the rod 51a via the drive unit 51, so that the mask 50 contacts the ring R and is positioned in a shielding position covering the area between the ring R and the wafer W in the adhesive sheet T. At this time, as Figure 7 As shown, the mask 50 is pressed against the ring R and stopped by the force applied by the force-applying member 11g. Then, the rod 51a moves away from the support shaft SA (50a) of the mask 50. In addition, the opposing surface 502 of the protrusion 501 enters between the wafer W and the ring R and approaches the portion where the adhesion of the adhesive sheet T is reduced (shaded area in the figure).

[0111] In the stated state, such as Figure 3 As shown, the supply device 31 supplies the reactive gas to the gas space GA, and the power supply 42 applies high-frequency power to the antenna 41, thereby generating plasma P in the gas space GA. By plasmaifying the reactive gas, reactive species such as ions and free radicals are generated, which activate and clean the surface of the electronic component E. The reactive gas is discharged from the exhaust port 60 by the exhaust device 61. Figure 3 In the diagram, arrows indicate the release of active species. Active species are released from plasma P in all directions. For ease of understanding, the diagram shows active species directed toward the component supply body TW (the same applies to the mounting substrate BW).

[0112] At this time, as Figure 10 As indicated by the arrow, the active species intended to be located near the outer periphery of the wafer W, i.e., near the area between the ring R and the electronic component E (the area indicated by the dashed line in the figure), is covered by the mask 50. In particular, the opposing surface 502 of the protrusion 501 extends between the wafer W and the ring R, preventing the active species and the ring R from contacting the exposed surface of the adhesive sheet T (the part indicated by the bold L in the figure).

[0113] After surface treatment of the TW part supply body, such as Figure 6 As shown in (C), the drive unit 51 raises the rod 51a, causing the mask 50 to overcome the applied force of the force-applying member 11g and rise, thereby moving the mask 50 away from the ring R (refer to...). Figure 7 ). Then, as Figure 6 As shown in (B), the part supply body TW is lifted by raising the rod 21a via the drive mechanism 21c. The stop gate SH opens, as shown. Figure 6 As shown in (A), the robot arm 191a is inserted through the loading / unloading inlet LN. Figure 4 As shown in (A) to (C), the drive mechanism 21c lowers the rod 21a to load the part supply body TW and transfer it to the robot arm 191a. Then, the robot arm 191a removes the part supply body TW from the loading / unloading inlet LN.

[0114] Furthermore, during the surface treatment of the part supply body TW, the transfer robot 191 receives the mounting substrate BW from the transfer container F. The transfer robot 191 receives the surface-treated part supply body TW from the rod 21a of the plasma treatment apparatus 100 and transfers the mounting substrate BW to the plasma treatment apparatus 100. The plasma treatment apparatus 100 activates and cleans the surface of the mounting substrate BW through plasma treatment (mounting substrate surface treatment step: step S102).

[0115] The plasma treatment process for mounting substrate BW is the same as that for component supply body TW. However, as Figure 5 As shown in (A) and (B), the mounting substrate BW is supported and raised / lowered by the rod 21b. Additionally, the height of the mask 50 is maintained at a distance from the mounting substrate BW by the stop 11f.

[0116] The transfer robot 191 transfers the surface-treated component supply body TW to the support part 112 of the component cleaning unit 110. The component cleaning unit 110 rotates the component supply body TW via the support part 112 and the rotating mechanism 113, while simultaneously supplying cleaning fluid L, thereby performing cleaning (component cleaning process: step S103). Furthermore, at this time, the adhesive sheet T of the component cleaning unit 110 is expanded via the expansion part, and cleaning is performed with the spacing of the electronic components E enlarged. Cleaning is performed by supplying cleaning fluid L, followed by high-speed rotation, and after the cleaning fluid L is shed and dried, the expansion part releases the adhesive sheet T, causing it to shrink back to its original state, restoring the spacing of the electronic components E to its original shape.

[0117] After the surface treatment of the mounting substrate BW in the plasma processing apparatus 100 is completed, the transfer robot 191 receives the mounting substrate BW from the plasma processing apparatus 100 and transfers it to the mounting substrate cleaning unit 120. The mounting substrate cleaning unit 120 rotates the mounting substrate BW while supplying cleaning fluid L, thereby performing cleaning (mounting substrate cleaning process: step S104). After cleaning with cleaning fluid L, the substrate is dried by being spun at high speed to remove the cleaning fluid L. The mounting substrate cleaning process includes a state in which it is performed simultaneously with the component supply body cleaning process. That is, the time for cleaning the component supply body TW overlaps with the time for cleaning the mounting substrate BW.

[0118] After the cleaning process of the component supply body TW is completed, the transfer robot 191 receives the component supply body TW from the component cleaning unit 110 and passes it to the measurement unit 140. The measurement unit 140 aligns the component supply body TW (positioning process: step S105). After alignment, the transfer robot 191 receives the component supply body TW from the measurement unit 140 and passes it to the adjustment processing unit 130. The adjustment processing unit 130 performs an adjustment process to reduce the adhesion of the adhesive sheet T by irradiating the component supply body TW with UV light from below (adjustment process: step S106). This positioning process and adjustment process overlap with the mounting substrate cleaning process.

[0119] After the cleaning process of the mounting substrate BW is completed, the transfer robot 191 receives the mounting substrate BW from the mounting substrate cleaning unit 120 and passes it to the alignment unit 150. The alignment unit 150 aligns the mounting substrate BW (positioning process: step S107).

[0120] After the adjustment process is completed, the transfer robot 191 receives the part supply body TW from the adjustment processing unit 130 and passes it to the supply body buffer unit 160. After the mounting substrate BW is aligned, the transfer robot 191 receives the mounting substrate BW from the alignment unit 150 and passes it to the mounting substrate buffer unit 170.

[0121] As described above, after the component supply body TW and the mounting substrate BW are housed in the supply body buffer 160 and the mounting substrate buffer 170 (housing process: step S108), if the joining part 180 can accept them, the transfer robot 191 receives the component supply body TW and the mounting substrate BW and transfers them to the joining part 180. That is, based on the signal from the joining part 180 indicating that processing is complete and acceptance is possible, the transfer robot 191 removes the component supply body TW and the mounting substrate BW from the supply body buffer 160 and the mounting substrate buffer 170 and moves them into the joining part 180. In the joining part 180, the electronic component E is picked up from the component supply body TW and mounted on the mounting substrate BW (mounting process: step S109).

[0122] Furthermore, the component supply body TW and mounting substrate BW after installation are processed as follows. First, either the component supply body TW that has picked up all installable electronic components E, or the mounting substrate BW that has installed electronic components E in all installation areas, is discharged out of the installation system 1 by another transport robot (not shown). Alternatively, the component supply body TW and mounting substrate BW are transported back to the supply body buffer 160 and mounting substrate buffer 170 by the transport unit 190. Alternatively, the component supply body TW and mounting substrate BW are directly transported by the transport unit 190 to the loading port 11c and then returned to their respective transport containers F.

[0123] [Effect]

[0124] (1) The processing apparatus (plasma processing apparatus 100) of this embodiment as described above includes: a stage 20 for placing a component supply body TW, wherein a wafer W monolithically converted into an electronic component E is attached to an adhesive sheet T mounted on a ring R and having adhesive properties; a chamber 11b for providing the stage 20 and capable of depressurizing the interior; a gas inlet 30 for introducing a reactive gas into the depressurized chamber 11b; a plasma generator 40 for generating active species by plasmaizing the reactive gas; a mask 50 for exposing the wafer W and covering the area between the ring R and the wafer W in the adhesive sheet T; and an ultraviolet irradiation unit 23 for irradiating the adhesive sheet T with ultraviolet light before removing the mask 50 covering the component supply body TW from the component supply body TW covered by the mask 50 in order to expose the component supply body TW to the active species, so as to reduce the adhesive force of the adhesive sheet T between the ring R and the wafer W.

[0125] As described above, the adhesion between the ring R in the adhesive sheet T and the wafer W can be reduced, thus preventing the adhesive sheet T from adhering even when the mask 50, which is close to the adhesive sheet T, comes into contact with it. In particular, when the gap between the mask 50 and the adhesive sheet T is very small, even if the mask 50 comes into contact with the adhesive sheet T due to deformation such as twisting of the ring R, deformation of the adhesive sheet T due to temperature changes, or deformation of the adhesive sheet T that occurs during the period before reuse when using a component supply TW such as when installation is stopped and restarted before all electronic components E are installed, the adhesive sheet T can still be prevented from adhering to the mask 50. Furthermore, even when the mask 50 comes into contact with the adhesive sheet T to prevent the entry of active species, the adhesive sheet T can still be prevented from adhering to the mask 50.

[0126] Therefore, it prevents the mask 50 from adhering to the adhesive sheet T and being unable to be removed from the component supply body TW. Furthermore, by bringing the mask 50 closer together to reduce the gap with the adhesive sheet T or by bringing the mask 50 into contact with the adhesive sheet T, active species are less likely to penetrate the area containing the adhesive sheet T between the ring R and the wafer W, thus suppressing plasma treatment of the exposed portion of the adhesive sheet T or the ring R. Therefore, contamination caused by organic matter constituting the adhesive sheet T or organic matter on the surface of the ring R, or by the scattering of metals constituting the ring R onto the wafer W is reduced.

[0127] (2) The portion of the mask 50 that directly faces the area between the ring R and the wafer W in the adhesive sheet T has a protrusion 501 that protrudes toward the adhesive sheet T. Therefore, the protrusion 501 of the mask 50 can be placed between the ring R and the wafer W to cover the adhesive sheet T more closely, so that active species are less likely to invade, and the contamination of the wafer W can be further reduced.

[0128] (3) The mask 50 is configured to move between a blocking position that covers the area between the ring R and the wafer W in the adhesive sheet T, and an exposed position that exposes the area between the ring R and the wafer W in the adhesive sheet T. The ultraviolet irradiation unit 23 irradiates the adhesive sheet T with UV light when the mask 50 is in the exposed position. Therefore, the adhesion force can be reduced before the mask 50 approaches the adhesive sheet T.

[0129] (4) The stage 20 is configured to selectively mount the component supply body TW and the mounting substrate BW for mounting the electronic component E. Therefore, by using the shared plasma processing device 100, not only the component supply body TW can be surface-treated, but also the mounting substrate BW can be surface-treated. This simplifies the mounting system 1. In addition, it can prevent the mounting system 1 from becoming too large.

[0130] [Modifications of the First Embodiment]

[0131] This embodiment is not limited to the described form.

[0132] (1) such as Figure 11 As shown in (A) and (B), the ultraviolet irradiation unit 23 may also be provided in the mask 50 instead of the stage 20. The ultraviolet irradiation unit 23 has multiple light sources arranged inside the mask 50 along the annular portion between the ring R and the wafer W.

[0133] The light source is also an LED element. Multiple LED elements are arranged facing each other on the upper surface of the annular adhesive sheet T between the ring R and the wafer W, emitting UV light towards the facing surface 502. The LED elements are housed, for example, in holes formed inside the upper and lower parts of the mask 50, and are thus housed within the mask 50 by fitting the upper and lower parts of the mask 50 together. Alternatively, the light source can be housed in a hole formed in the protrusion 501 and closed using a cover having the facing surface 502, thereby housing the LED element within the mask 50. The ultraviolet irradiation unit 23 is connected to the control unit 200, and the timing of light emission is controlled by the control unit 200.

[0134] The mask 50 is made of a material that allows UV light to pass through, such as quartz. Therefore, UV light from the ultraviolet irradiation section 23 passes through the opposing surface 502 and irradiates the adhesive surface in the adhesive sheet T, thereby reducing the adhesion of the adhesive surface. Alternatively, the portion that allows UV light to pass through may only be the area irradiated with UV light towards the region between the ring R and the wafer W of the adhesive sheet T. For example, it may only be the portion of the protrusion 501. Furthermore, any space that allows UV light to pass through may be a hole or a slot.

[0135] In the described form, such as Figure 11As shown in (A), when the mask 50 is lowered by the force applied by the force-applying member 11g and the rod 51a is lowered by the driving unit 51, the ultraviolet irradiation unit 23 irradiates the adhesive sheet T with UV light, as indicated by the arrow below the opposing surface 502 in the figure. As a result, the adhesion force in the area between the ring R in the adhesive sheet T and the wafer W (the shaded area in the figure) is reduced. Furthermore, as... Figure 11 As shown in (B), the mask 50 is in contact with the ring R, thus placing the mask 50 in a blocking position.

[0136] This reduces the adhesion force between the ring R and the wafer W, thus preventing the mask 50 from attaching to the area near the adhesive sheet T. Therefore, the same effect as described above can be achieved.

[0137] (2) As described above, whether the ultraviolet irradiation unit 23 is provided on the stage 20 or on the mask 50, the mask 50 is in the blocking position (refer to Figure 7 , Figure 11 (B) Under these conditions, the ultraviolet irradiation section 23 can begin irradiating the adhesive sheet T with UV light. In this case, irradiation continues until the time required for the adhesive force to disappear has elapsed. Thus, even if the mask 50 is in temporary contact with the adhesive sheet T, the adhesive force of the adhesive sheet T can be reduced, making it easier to peel off.

[0138] In the example described, after the irradiation time required to eliminate adhesion has elapsed at the exposed position, the mask 50 moves to the shielded position. UV light is then irradiated at the shielded position until the irradiation time required to eliminate adhesion has elapsed. Furthermore, UV light irradiation of the adhesive sheet T can also begin while the mask 50 is in a state between the shielded and exposed positions. That is, UV light irradiation can also occur during the movement of the mask 50 from the exposed position to the shielded position. Thus, the irradiation time of the UV light required to eliminate adhesion overlaps with other operations, shortening the cycle time. As described above, UV light irradiation can begin at any time before the surface treatment (plasma treatment) ends and the mask 50 rises.

[0139] (3) In the described configuration, in the plasma processing apparatus 100, both the part supply body TW and the mounting substrate BW undergo surface treatment. When the part supply body TW is treated, as follows: Figure 6 As shown in (D), the mask 50 stops grounded with the ring R when in the shielding position. When processing the mounting substrate BW, as... Figure 5 As shown in (B), the mask 50 stops in contact with the stop 11f when it is in the blocking position. However, it is not limited to this configuration.

[0140] Furthermore, the descending mask 50 can be stopped with a gap without contacting the ring R. This suppresses the generation of particles caused by contact between the mask 50 and the ring R. In this case, the mask 50 is stopped by the stop 11f, or by the support shaft SA (50a) abutting the bottom of the hole 11e, thus creating a gap between the mask 50 and the ring R.

[0141] Similarly, the descending mask 50 can be stopped with a gap, without contacting the stop 11f or directly contacting the stage 20. This suppresses the generation of particles caused by contact between the mask 50 and the stop 11f or the stage 20. In this case, the support shaft SA (50a) is set to stop abutting the bottom of the hole 11e, creating a gap between the mask 50 and the stage 20.

[0142] For example, such as Figure 12 As shown, the bottom surface of the hole 11e can also be used to replace the stop 11f provided in the cavity 11b, thus functioning as a stop. In this case, the mask 50 does not directly contact the stage 20, therefore no particles are generated due to contact. Furthermore, since the stop 11f is not provided on the stage 20, a simple structure can be adopted. In addition, Figure 12 This shows the state of processing the mounting substrate BW, and can also be applied to the case of processing the component supply body TW.

[0143] In the embodiment described above, the ultraviolet irradiation unit 23 in the plasma processing apparatus 100 is irradiated with UV light to reduce adhesion. However, UV irradiation may also be performed in the measurement unit 140 or the adjustment processing unit 130. Alternatively, the part supply TW may be conveyed to the measurement unit 140 or the adjustment processing unit 130 via the transfer unit 190 and irradiated with UV light before plasma processing (surface treatment) is performed using the plasma processing unit (surface treatment unit) 100, and then the UV-treated part supply TW is conveyed to the plasma processing unit (surface treatment unit) 100 via the transfer unit 190 and subjected to plasma processing (surface treatment). As described above, the plasma processing apparatus 100 and any apparatus including other processing units, such as the measurement unit 140 or the adjustment processing unit 130, are also referred to as processing apparatuses. That is, even if the ultraviolet irradiation unit is provided in a processing unit other than the plasma processing apparatus 100, such an ultraviolet irradiation unit may be included and the apparatus may be considered a processing apparatus. Hereinafter, the configuration in which an ultraviolet irradiation unit is provided in a processing section other than the plasma processing apparatus 100 will be described in the second to fourth embodiments.

[0144] [Second Implementation]

[0145] [structure]

[0146] Basically, the installation system 1 of this embodiment has the same structure as that of the first embodiment. However, in this embodiment, as... Figure 13 (A) Figure 14 As shown in (A), the plasma processing apparatus 100 does not have an ultraviolet irradiation section 23, but the measurement section 140 has an ultraviolet irradiation section 142. A light-shielding mask 143 is provided between the ultraviolet irradiation section 142 and the adhesive sheet T, and the light-shielding mask 143 blocks UV light toward the area of ​​the adhesive sheet T where the wafer W is attached.

[0147] That is, the measuring unit 140 of this embodiment includes a platform 141, an ultraviolet irradiation unit 142, a light-shielding mask 143, a support member 144, and a positioning member 145 located within the chamber 11b. The chamber 11b is a container with an opening OP for moving the part supply body TW in and out. The platform 141 is a platform for holding the part supply body TW between the ultraviolet irradiation unit 142 and the light-shielding mask 143, which will be described later. Placing the part supply body TW on the platform 141 also includes placing it between the part supply body TW and the platform 141 through other members as described above.

[0148] The ultraviolet irradiation unit 142 is constructed by arranging multiple rectangular plates, each with multiple light sources along its long side, parallel to each other along its short side. The outer diameter of the ultraviolet irradiation unit 142 is larger than the inner diameter of the ring R. The light source is the same as in the first embodiment. The ultraviolet irradiation unit 142 is placed on a stage 141. Alternatively, the ultraviolet irradiation unit 142 may also be constructed by arranging light sources in a ring around the light-shielding mask 143.

[0149] The light-shielding mask 143 is a circular component with the same diameter as the wafer W, formed of a light-shielding material or coated thereon. The support member 144 is a rod configured to be raised and lowered by a drive unit (not shown). The positioning member 145 is a rod configured to be raised and lowered by a drive unit (not shown) and to be able to contact and separate from the outer periphery of the part supply body TW.

[0150] [action]

[0151] Basically, the operation of this embodiment is the same as that of the first embodiment, as described above. However, in this embodiment, in the measurement unit 140, UV light is irradiated from below the component supply body TW onto the area between the ring R and the wafer W in the adhesive sheet T using the ultraviolet irradiation unit 142 through the light-blocking mask 143.

[0152] That is, such as Figure 13 As shown in (A), the robotic arm 191a, supporting the part supply body TW, enters the chamber 11b through the opening OP. As... Figure 13 As shown in (B), the rising support member 144 receives the part supply body TW that has come to the top of the platform 141 from the robot arm 191a.

[0153] Next, as Figure 13 (C) Figure 14 As shown in (B), after the robot arm 191a retracts, the support member 144 descends, thereby placing the part supply body TW onto the light-shielding mask 143 on the stage 141. Figure 13 As shown in (D), the position is adjusted by raising the positioning member 145 to contact the outer periphery of the part supply body TW, and the ultraviolet irradiation section 142 irradiates UV light. As a result, the portion of the adhesive sheet T to which the wafer W is attached is shielded by the light-shielding mask 143, and the area between the ring R and the wafer W is irradiated with UV light, thus reducing the adhesion.

[0154] Subsequently, following the reverse process described above, i.e. Figure 13 In the process of (C) to (A), the robot arm 191a is used to move the part supply body TW out of the chamber 11b and into the plasma processing device 100 for surface treatment.

[0155] [Effect]

[0156] The processing apparatus (measurement unit 140) of this embodiment, as described above, has a light-shielding mask 143 provided between the ultraviolet irradiation unit 142 and the adhesive sheet T. The light-shielding mask 143 blocks UV light directed toward the area of ​​the adhesive sheet T where the wafer W is attached. Therefore, the adhesive force between the ring R in the adhesive sheet T and the wafer W can be reduced by the ultraviolet irradiation unit 142 without reducing the adhesive force of the adhesive sheet T where the wafer W is attached.

[0157] Therefore, in the plasma processing apparatus 100, adhesion of the adhesive sheet T to the mask 50 can be prevented, thus achieving the same effect as in the first embodiment. Furthermore, the ultraviolet irradiation section 142 can be prevented from being affected by the plasma, and the structure of the plasma processing apparatus 100 can be simplified. Additionally, plasma processing in the plasma processing apparatus 100 and UV light irradiation based on the ultraviolet irradiation section 142 can be performed simultaneously and in parallel, thereby improving productivity. Moreover, simple irradiation control can be achieved using a simple irradiation mechanism, and the processing of the adhesive sheet T can be completed with a single UV light irradiation.

[0158] [Third Implementation Method]

[0159] [structure]

[0160] Basically, the installation system 1 of this embodiment has the same structure as that of the first embodiment. However, in this embodiment, as... Figure 15 As shown, the plasma processing apparatus 100 does not have an ultraviolet irradiation section 23, but the measurement section 140 has an ultraviolet irradiation section 146. For example... Figure 16As shown in (A) to (I), the ultraviolet irradiation unit 146 irradiates UV light from above the part supply body TW only on the portion of the adhesive sheet T that is directly opposite to the mask 50 as the ultraviolet irradiation unit 146 moves relative to the part supply body TW.

[0161] That is, the measuring unit 140 includes a platform 141, a support member 144, a positioning member 145, and an ultraviolet irradiation unit 146 located within the chamber 11b. The platform 141, support member 144, and positioning member 145 within the chamber 11b are the same as in the second embodiment. The ultraviolet irradiation unit 146 is provided above the opening OP within the chamber 11b. The ultraviolet irradiation unit 146 has a plurality of light sources 146a arranged in a direction orthogonal to the forward direction of the part supply body TW, so as to irradiate UV light toward the part supply body TW passing through the opening OP. The light sources 146a are the same as in the second embodiment.

[0162] [action]

[0163] Basically, the operation of this embodiment is the same as that of the second embodiment, as described above. However, in this embodiment, when the robotic arm 191a supporting the part supply body TW enters the chamber 11b from the opening OP, the light source 146a that emits light is switched as it passes through the ultraviolet irradiation section 146. That is, from... Figure 16 (A) The light source 146a, as shown by the dashed line, is in a non-emitting state, such as Figure 16 As shown in (B) to (H), the blackened light source 146a switches the light source 146a to illuminate only the area between the ring R and the wafer W as the component supply body TW moves below the ultraviolet irradiation section 146. As a result, the adhesion between the ring R and the wafer W in the adhesive sheet T is reduced.

[0164] Then, as Figure 16 As shown in (I), after the part supply body TW passes below the ultraviolet irradiation section 146, all light sources 146a stop illuminating. Then, the part supply body TW, which has arrived above the stage 141, is received by the robot arm 191a via the rising support member 144. Subsequently, the position of the part supply body TW is adjusted in the same manner as in the second embodiment, and the part supply body TW is removed from the chamber 11b for surface treatment in the plasma processing apparatus 100.

[0165] [Effect]

[0166] As described above, the processing apparatus (measurement unit 140) of this embodiment irradiates UV light only on the portion of the adhesive sheet T that directly faces the mask 50, as the ultraviolet irradiation unit 146 moves relative to the part supply body TW. Furthermore, in this embodiment, the ultraviolet irradiation unit 146 has multiple light sources 146a, and the light source 146a that emits light is switched as the ultraviolet irradiation unit 146 moves relative to the part supply body TW.

[0167] Therefore, the adhesion between the ring R in the adhesive sheet T and the wafer W can be reduced by the ultraviolet irradiation section 146. As a result, in the plasma processing apparatus 100, adhesion of the adhesive sheet T to the mask 50 can be prevented, and the ultraviolet irradiation section 146 can be prevented from being affected by the plasma, thus achieving the same effect as in the second embodiment. Furthermore, plasma processing in the plasma processing apparatus 100 and UV light irradiation based on the ultraviolet irradiation section 146 can be performed simultaneously and in parallel, thereby improving productivity. Moreover, it eliminates the need for a large irradiation section or a light-shielding mask to obtain a large irradiation area, simplifying the mechanism.

[0168] [Modifications of the Third Embodiment]

[0169] This embodiment is not limited to the described form.

[0170] (1) such as Figure 17 As shown in (A) and (B), a rotation mechanism 147 may also be provided, which moves the part supply body TW relative to the ultraviolet irradiation unit 146 by rotating it. The rotation mechanism 147 is provided on the stage 141, and the part supply body TW, which is placed on the upper surface, is rotated by a drive source such as a motor. The ultraviolet irradiation unit 146 is positioned above the part supply body TW placed on the rotation mechanism 147, between the ring R and the wafer W. Figure 17 As shown in (A) and (B), the rotating mechanism 147 rotates the part supply body TW, while the ultraviolet irradiation unit 146 irradiates the adhesive sheet T between the ring R and the wafer W with UV light, thereby reducing the adhesion between the ring R and the wafer W in the adhesive sheet T. Therefore, the same effect as described above can be obtained. Furthermore, it eliminates the need for an irradiation unit with multiple light sources, simplifying the structure and eliminating the need for complex irradiation control.

[0171] (2) The ultraviolet irradiation unit 146 and the part supply body TW only need to move relative to each other. Therefore, the structure can also be as follows: the ultraviolet irradiation unit 146 moves linearly relative to the part supply body TW based on an XY linear guide or moves in a circular shape based on a ring guide. Furthermore, a swivel mechanism or a current scanner can be used to perform circular irradiation scanning. In addition, the adhesion can be reduced by using an ultraviolet irradiation unit 146 (ring UV lamp) with multiple light sources arranged in a ring to irradiate the area between the ring R and the wafer W in the adhesive sheet T.

[0172] [Fourth Implementation Method]

[0173] Alternatively, the same structure as in the second and third embodiments may be provided in the adjustment processing unit 130 instead of the measurement unit 140. Hereinafter, refer to... Figure 18 An embodiment in which the irradiation device 131 in the adjustment processing unit 130 is used as an ultraviolet irradiation unit will be described. Furthermore, Figure 18 This indicates an adjustment to the internal structure of the processing unit 130. Figure 18 The left side view in (A) to (D) is a side view, and the right side view is a plan view.

[0174] [structure]

[0175] like Figure 18 As shown in (A), a platform 132 for mounting the part supply body TW is provided in the adjustment processing unit 130 through a light-shielding mask 133. The upper surface of the platform 132 is formed of a material that allows ultraviolet light to pass through. An irradiation device 131 is provided inside the platform 132. The irradiation device 131 is configured to reciprocate horizontally within the platform 132 via a drive mechanism (not shown). Similar to the third embodiment, the irradiation device 131 has multiple light sources 131a arranged in a direction orthogonal to the moving direction and irradiating UV light upwards.

[0176] Platform 132 is provided with a plurality of lifting pins 132a. The plurality of lifting pins 132a are configured to move between a support position in which they rise and protrude from the upper surface of platform 132 to support the part supply body TW, and a standby position in which they descend and are housed within platform 132, via a drive mechanism not shown.

[0177] The light-shielding mask 133 is formed by attaching a circular light-shielding film 133a, which is the same shape as the wafer W of the component supply body TW and an annular film, which is the same shape as the ring R, to the UV-transmitting film 133b. That is, the light-shielding mask 133 is configured such that UV light from the irradiation device 131 is blocked by the light-shielding film 133a in the area of ​​the wafer W and the ring R, and then irradiates the area between the wafer W and the ring R through the UV-transmitting film 133b, located between the irradiation device 131 and the component supply body TW. A hole 133c is formed in the light-shielding mask 133 for the insertion of a lifting pin 132a.

[0178] [action]

[0179] In this embodiment as described above, prior to plasma processing based on the plasma processing apparatus 100, the light-shielding mask 133 is placed on the platform 132 (see reference 132) by a conveying device (not shown). Figure 18 (A)). Next, as Figure 18 As shown in (B), the part supply body TW is supported and moved in by the robot arm 191a, as follows. Figure 18 As shown in (C), the lifting pin 132a, which rises to the support position, receives the part supply body TW. The part supply body TW is placed on the light-shielding mask 133 by lowering the lifting pin 132a to the standby position.

[0180] In the stated state, such as Figure 18 As shown in (D), the irradiation device 131 moves beneath the component supply body TW, irradiating the entire component supply body TW with UV light. A light-shielding mask 133 exists between the component supply body TW and the light source 131a, thus irradiating the area of ​​the adhesive sheet T between the wafer W and the ring R with UV light through the light-shielding mask 133a, without irradiating the area between the wafer W and the ring R. Consequently, the adhesive force of the adhesive sheet T between the ring R and the wafer W is reduced.

[0181] [Effect]

[0182] As described above, in this embodiment, the adhesion force of the adhesive sheet T between the ring R and the wafer W can also be reduced before plasma treatment in the plasma processing apparatus 100, thus achieving the same effect as described above.

[0183] Since UV light does not reach the adhesive sheet T attached to the wafer W or ring R before plasma treatment, the adhesive force of the adhesive sheet T will not decrease. During the handling or cleaning process after plasma treatment, the electronic component E or ring R will not be peeled off from the adhesive sheet T.

[0184] Since the adjustment processing unit 130, which includes an irradiation device 131 with UV irradiation function, is used as a processing device to reduce the adhesion of the adhesive sheet T, the adhesion of the mask 50 can be prevented with a simple structure. In addition, in the common processing device, by using a light-shielding mask 133 separately, it can also be applied to the case where the adhesion of the adhesive sheet T is adjusted for installation, so the adhesion of the mask 50 can be prevented without increasing the system size.

[0185] [Modifications of the Fourth Embodiment]

[0186] This embodiment is not limited to the described form. The light-shielding mask 133 can also be a structure that maintains itself with a gap between itself and the light-shielding mask 133, as long as it does not cause peeling of the electronic component E or the ring R. Furthermore, as... Figure 16 As illustrated, if the structure is configured to selectively irradiate UV light as the UV irradiation section 146 moves relative to the component supply body TW, the adhesion between the ring R and the wafer W can be reduced even without using the light-shielding mask 133.

[0187] [Fifth Implementation]

[0188] [structure]

[0189] Basically, the mounting system 1 of this embodiment has the same structure as the first embodiment. However, in this embodiment, the portion of the mask 50 directly facing the adhesive sheet T has a protrusion with a curved front end. Figure 19 (A) and (B) are on the opposing surfaces 502 of the protrusion 501 (see reference). Figure 4 An example is provided with protrusions 502a. For example, multiple protrusions 502a with rounded front ends are formed by processing the surface of the facing surface 502. The surface processing can be performed by roughening treatment based on sandblasting or microtexturing based on laser. The height of the protrusions 502a is preferably 10 μm or more, and the radius of the sphere formed by the curved surface is preferably about 10 μm. In addition, the thickness of the adhesive layer AD provided on the surface of the substrate B of the adhesive sheet T is 10 μm to 20 μm.

[0190] [Effect]

[0191] In this embodiment as described above, such as Figure 11 As shown in (B), when the mask 50 is in the blocking position, the adhesion of the adhesive layer AD is reduced by UV light irradiation, and as... Figure 19 As shown in (B), even when the opposing surface 502 is in contact with the adhesive layer AD, the contact area is reduced due to the protrusion 502a, making it difficult to adhere and easy to peel off.

[0192] [Modifications of the Fifth Embodiment]

[0193] This embodiment is not limited to the described form.

[0194] (1) such as Figure 20 As shown in (A) and (B), the front end of the protrusion 502a can also be a flat surface. In this case, even if the opposing surface 502 contacts the adhesive layer AD, the contact area is reduced due to the protrusion 502a, making it difficult to adhere and easy to peel off.

[0195] (2) Alternatively, a height difference can be provided on the surface of the mask 50 directly facing the adhesive sheet T, moving away from the adhesive sheet T as it approaches the ring R side from the wafer W side. For example, as Figure 21 As shown in (A) and (B), the opposing surface 502 is set as an inclined surface (conical surface) that rises from the wafer W side toward the ring R side. Then, the front end of the protrusion 501 becomes a curved protrusion 502a. In this case, the contact area when in contact with the adhesive layer AD also becomes smaller, making it difficult to adhere and easy to peel off. Furthermore, as... Figure 22 As shown in (A), the front end of protrusion 502a can also be a flat surface, such as... Figure 22 As shown in (B), a concave-convex shape can also be provided at the front end of the protrusion 502a. Furthermore, the height difference is not limited to the height difference formed by the inclined surface; for example, the height difference can also be provided in a stepped shape.

[0196] (3) In this embodiment, the ultraviolet irradiation unit 23 may be disposed on the stage 20 or on the mask 50. Regarding the irradiation of ultraviolet light based on the ultraviolet irradiation unit 23, the mask 50 may be in an exposed position or in a blocked position (see [reference]). Figure 7 , Figure 10 ).

[0197] [Sixth Implementation Method]

[0198] It is also possible to construct a processing device, pretreatment device, or installation system that does not have an ultraviolet irradiation section 23 before plasma treatment as described above, i.e., an invention with the protrusion exemplified in the fifth embodiment.

[0199] That is, as described above, a processing apparatus can also be configured as follows: a stage 20 for holding a component supply body TW, wherein a wafer W monolithized into an electronic component E is attached to a ring R on an adhesive sheet T that is mounted on a ring R; a chamber 11b for the stage 20, capable of depressurizing the interior; a gas inlet 30 for introducing reactive gas into the depressurized chamber 11b; a plasma generator 40 for generating active species by plasmaizing the reactive gas; and a mask 50 for exposing the wafer W and covering the area between the ring R and the wafer W in the adhesive sheet T, wherein the portion of the mask 50 directly facing the adhesive sheet T has a protrusion with a curved or flat front end. Thus, even if the facing surface 502 contacts the adhesive layer AD, the contact area is reduced due to the protrusion, making it difficult to adhere and easy to peel off.

[0200] For example, such as Figure 23 As shown, in a plasma processing apparatus 100 that does not have an ultraviolet irradiation section 23, such as Figure 19 As shown in (A) and (B), the portion of the mask 50 directly facing the region between the ring R in the adhesive sheet T and the wafer W is provided with a protrusion 501 protruding towards the adhesive sheet T, and a protrusion 502a with a curved front end is provided on the protrusion 501. Furthermore, the surface of the mask 50 directly facing the adhesive sheet T has a height difference that decreases as it moves away from the adhesive sheet T from the wafer W side towards the ring R side. In addition, Figures 20-22 The variations shown can also be applied to this embodiment.

[0201] Although this structure cannot achieve the effect of reducing adhesion caused by UV light irradiation, it can achieve the same effect as the fifth embodiment and its variations in preventing the adhesive sheet T from adhering to the mask 50.

[0202] [Other Implementation Methods]

[0203] The embodiments and variations of the present invention have been described above. However, these embodiments and variations are provided as examples and are not intended to limit the scope of the invention. These novel embodiments can be implemented in various other forms, and various omissions, substitutions, changes, and combinations can be made without departing from the spirit of the invention. These embodiments and variations are included in the scope or spirit of the invention and are included in the invention as described in the claims.

[0204] Explanation of icon numbers

[0205] 1: Install the system

[0206] 11a: Matrix

[0207] 11b: Chamber

[0208] 11c: Loading port

[0209] 11d: Window component

[0210] 11e: Hole

[0211] 11f: Stop

[0212] 11g: Force-applying component

[0213] 11h, 11i: Spring column

[0214] 20: Platform

[0215] 21: Drive Unit

[0216] 21a, 21b: Rods

[0217] 21c: Drive mechanism

[0218] 23: Ultraviolet Irradiation Section

[0219] 30: Gas inlet

[0220] 31: Supply device

[0221] 31a: Piping

[0222] 40: Plasma generator

[0223] 41: Antenna

[0224] 42: Power supply

[0225] 43: Matching Box

[0226] 50: Mask

[0227] 50a: Support shaft

[0228] 51: Drive Unit

[0229] 51a: Rod

[0230] 51b: Drive mechanism

[0231] 60: Exhaust port

[0232] 61: Exhaust device

[0233] 61a: Piping

[0234] 70: Isolation Wall

[0235] 100: Plasma processing device

[0236] 110: Supply Body Cleaning Department

[0237] 111: Cleaning Room

[0238] 111a: Opening

[0239] 111b: Door blocking

[0240] 112: Support section

[0241] 113: Rotating mechanism

[0242] 114: Cup

[0243] 115: Supply Department

[0244] 115a: Nozzle

[0245] 115b: Mobile mechanism

[0246] 120: Substrate Cleaning Unit

[0247] 130: Adjustment and Processing Department

[0248] 131: Irradiation device

[0249] 131a: Light source

[0250] 132: Platform

[0251] 132a: Lifting pin

[0252] 133: Light-blocking mask

[0253] 133a: Light-blocking film

[0254] 133b: UV-permeable membrane

[0255] 133c: Hole

[0256] 140: Planning and Surveying Department

[0257] 141: Platform

[0258] 142, 146: Ultraviolet Irradiation Section

[0259] 142a, 146a: Light source

[0260] 143: Light-blocking mask

[0261] 144: Supporting components

[0262] 145: Positioning component

[0263] 147: Rotating Mechanism

[0264] 150: Alignment section

[0265] 160: Supply body buffer section

[0266] 161: Repository

[0267] 170: Mounting substrate buffer section

[0268] 171: Repository

[0269] 180: Joint

[0270] 190: Transport Department

[0271] 191: Transport Robot

[0272] 191a: Robotic Arm

[0273] 192: Mobile mechanism

[0274] 200: Control Department

[0275] 501: Protrusion

[0276] 502: Opposing planes

[0277] 502a: Protrusion

[0278] TW: Parts Supply Unit

[0279] BW: Mounting substrate

Claims

1. A processing device, characterized by Having: a stage on which a part supply is placed, the part supply having a wafer, which is singulated into an electronic part, attached to an adhesive sheet that is installed in a ring and has adhesiveness; a chamber in which the stage is disposed, the inside of which can be depressurized; a gas introduction port through which a reaction gas is introduced into the chamber that has been depressurized; a plasma generator that generates active species by plasma-izing the reaction gas; a mask that exposes the wafer and covers the ring and a region between the ring and the wafer in the adhesive sheet; and an ultraviolet irradiation section that irradiates the adhesive sheet with ultraviolet rays to reduce the adhesion of the adhesive sheet between the ring and the wafer before the mask is removed from the part supply covered with the mask in order to expose the part supply to the active species.

2. The processing device of claim 1, wherein, The mask has a protrusion that protrudes toward the adhesive sheet at a portion that directly faces the adhesive sheet between the ring and the wafer.

3. The processing device according to claim 1 or 2, characterized in that, The ultraviolet irradiation section is provided on the stage.

4. The processing device according to claim 1 or 2, characterized in that, The ultraviolet irradiation section is provided on the mask.

5. The processing device according to claim 1 or 2, characterized by A light-shielding mask that shields ultraviolet rays toward a region in the adhesive sheet to which the wafer is attached is provided between the ultraviolet irradiation section and the adhesive sheet.

6. The processing device according to claim 1 or 2, characterized by The ultraviolet irradiation section irradiates only a portion of the adhesive sheet that directly faces the mask with ultraviolet rays as the ultraviolet irradiation section and the part supply relatively move.

7. The processing device of claim 6, wherein, The ultraviolet irradiation section has a plurality of light sources, The light sources that emit light are switched in accordance with relative movement of the ultraviolet irradiation section and the part supply.

8. The processing device of claim 6, wherein It has a rotation mechanism that relatively moves the part supply with respect to the ultraviolet irradiation section by rotating the part supply.

9. The processing device according to claim 1 or 2, characterized by The mask is provided to be movable between a shielding position that covers the ring and a region between the ring and the wafer in the adhesive sheet, and an exposing position that exposes the ring and a region between the ring and the wafer in the adhesive sheet, The ultraviolet irradiation section starts to irradiate the adhesive sheet with ultraviolet rays when the mask is in the shielding position.

10. The processing device according to claim 1 or 2, characterized by The mask is provided to be movable between a shielding position that covers the ring and a region between the ring and the wafer in the adhesive sheet, and an exposing position that exposes the ring and a region between the ring and the wafer in the adhesive sheet, The ultraviolet irradiation section starts to irradiate the adhesive sheet with ultraviolet rays when the mask is in the exposing position.

11. The processing device according to claim 1 or 2, characterized by The mask is provided to be movable between a shielding position that covers the ring and a region between the ring and the wafer in the adhesive sheet, and an exposing position that exposes the ring and a region between the ring and the wafer in the adhesive sheet, The ultraviolet irradiation section starts to irradiate the adhesive sheet with ultraviolet rays when the mask is in a position between the exposing position and the shielding position.

12. The processing device according to claim 1 or 2, characterized by A portion of the mask that directly faces the adhesive sheet has a protrusion whose tip is curved or flat.

13. The processing device according to claim 1 or 2, characterized by A step difference is provided in a surface of the mask directly facing the adhesive sheet, the step difference being away from the adhesive sheet as it approaches from the wafer side to the ring side.

14. The processing device of claim 1 or 2, wherein, The stage is configured to selectively load the component supply and a mounting substrate on which the electronic component is mounted.

15. A pre-treatment device characterized by Having: The processing device according to any one of claims 1 to 14; A loading port for mounting a conveyance container containing the component supply; A supply cleaning section that cleans the component supply; A mounting substrate cleaning section that cleans the mounting substrate; and A conveyance section that conveys the component supply.

16. A mounting system characterized by Having: The pre-processing device according to claim 15; and A joining section that separates the electronic component from the component supply processed by the pre-processing device and mounts it on a mounting substrate.

17. A mounting system characterized by Having: The processing device according to any one of claims 1 to 14; and A joining section that separates the electronic component from the component supply processed by the processing device and mounts it on a mounting substrate.

18. A processing device, characterized by Having: A stage on which a component supply is loaded, the component supply having an adhesive sheet with adhesiveness mounted on a ring and having a wafer singulated into an electronic component attached thereto; A chamber in which the stage is provided, the inside of which is capable of being depressurized; A gas introduction port that introduces a reaction gas into the chamber that has been depressurized; A plasma generator that generates active species by plasmaizing the reaction gas; and A mask that exposes the wafer and covers a region between the ring and the wafer in the adhesive sheet and the ring, A portion of the mask directly facing the adhesive sheet has a protrusion with a curved or flat front end. The mask has a protruding portion protruding toward the adhesive sheet in a portion directly facing a region between the ring and the wafer in the adhesive sheet, 19. The processing device of claim 18, wherein, The protrusion is provided in the protruding portion. A step difference is provided in a surface of the mask directly facing the adhesive sheet, the step difference being away from the adhesive sheet as it approaches from the wafer side to the ring side.

20. The processing device of claim 18, wherein, The stage is configured to selectively load the component supply and a mounting substrate on which the electronic component is mounted.

21. The processing device of claim 18, wherein, Having:

22. A pre-treatment device characterized by The processing device according to any one of claims 18 to 21; A loading port for mounting a conveyance container containing the component supply; A supply cleaning section that cleans the component supply; A mounting substrate cleaning section that cleans the mounting substrate; and A conveyance section that conveys the component supply. Having:

23. A mounting system characterized by The pre-processing device according to claim 22; and A joining section that separates the electronic component from the component supply processed by the pre-processing device and mounts it on a mounting substrate. Having:

24. A mounting system characterized by The processing device according to any one of claims 18 to 21; and A joining section that separates the electronic component from the component supply processed by the processing device and mounts it on a mounting substrate. ​

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