A reaction chamber and wafer processing apparatus

Abstract

The application relates to the technical field of wafer processing equipment, in particular to a reaction chamber and wafer processing equipment, which comprise a quartz tube, an induction coil, a second shielding cage and a first shielding cage, the quartz tube is arranged at the top of a processing chamber; the induction coil is arranged outside the quartz tube; the second shielding cage is arranged outside the quartz tube, a plurality of second axial slits penetrating the side wall of the second shielding cage are formed in the second shielding cage; the first shielding cage is arranged outside the quartz tube, a plurality of first axial slits penetrating the side wall of the first shielding cage are formed in the first shielding cage, and the first axial slits extend along the axial direction; the first shielding cage and / or the second shielding cage can rotate around the axis of the quartz tube, so that the relative circumferential position of the first axial slits and the second axial slits is adjusted through rotation, thereby realizing the regulation and control of the on-off and circumferential width of the magnetic field passage of the alternating magnetic field into the quartz tube; the application solves the problem of quartz tube erosion caused by capacitive coupling of ICP equipment in high-hydrogen processes.

Description

Technical Field

[0001] This invention relates to the field of wafer processing equipment technology, and more particularly to a reaction chamber and wafer processing equipment. Background Technology

[0002] In ICP-type plasma resist stripping or etching equipment used in high-hydrogen processes, although the high-frequency electromagnetic field generated by the coil can effectively excite the plasma, the unavoidable capacitive coupling between the coil and the gas in the reaction chamber causes the plasma (especially hydrogen plasma) to bombard the inner wall of the quartz dielectric window, i.e., the quartz tube, resulting in erosion. Although setting a Faraday shield between the coil and the quartz tube can alleviate this problem to some extent, the open area corresponding to the slit of the quartz tube inner wall and the Faraday shield, as well as the intersection of this open area and the coil, will still be subject to concentrated bombardment by hydrogen ions. After long-term use, this will still lead to erosion of the quartz tube and the shedding of particulate matter, which will then contaminate the wafer, affecting the lifespan of the equipment and the process yield. Summary of the Invention

[0003] This invention relates to a reaction chamber and wafer processing equipment, with the aim of solving the problem of quartz tube corrosion caused by capacitive coupling in ICP equipment during high-hydrogen processes.

[0004] To achieve the above objectives, the present invention provides a reaction chamber, comprising:

[0005] Quartz tubes are located at the top of the processing chamber;

[0006] An induction coil is arranged around the outside of the quartz tube and connected to an external radio frequency power supply. It is used to generate an alternating magnetic field that can enter the quartz tube and induce an eddy current electric field through the alternating magnetic field to accelerate the collision of free electrons with the process gas to generate plasma.

[0007] The second shielding cage is arranged around the quartz tube and between the quartz tube and the induction coil. The second shielding cage has several second axial slits that penetrate its sidewalls and extend axially.

[0008] A first shielding cage is arranged around the quartz tube and between the quartz tube and the second shielding cage. The first shielding cage has a plurality of first axial slits that penetrate its sidewalls and extend along the axial direction. The first shielding cage and / or the second shielding cage can rotate around the axis of the quartz tube to adjust the relative circumferential position of the first axial slits and the second axial slits, thereby controlling the opening and closing of the magnetic field path and the circumferential width of the alternating magnetic field entering the quartz tube.

[0009] Optionally, the circumferential width of the first axial slit is smaller than the circumferential distance between two adjacent second axial slits on the second shielding cage;

[0010] The circumferential width of the second axial slit is less than the circumferential distance between two adjacent first axial slits on the first shielding cage.

[0011] Optionally, the first shielding cage is connected to a first driving unit to drive the first shielding cage to rotate about the axis of the quartz tube.

[0012] And / or the second shielding cage is connected to a second drive unit to drive the second shielding cage to rotate circumferentially around the quartz tube.

[0013] Optionally, the axial heights of both the first axial slit and the second axial slit are greater than the axial height of the induction coil.

[0014] Optionally, the induction coil includes a plurality of annular segments spaced apart along the axial direction of the quartz tube, and a plurality of connecting segments connecting two adjacent annular segments.

[0015] Each of the first axial slits and each of the second axial slits is composed of a plurality of slit segments arranged along the axial direction, and the number and axial position of the slit segments correspond one-to-one with the number and axial position of the annular segments on the same axis, and the orthographic projection structure of the slit segments on the induction coil at least partially covers the annular segments.

[0016] Optionally, the first shielding cage or the second shielding cage is provided with a plurality of circumferential slits that penetrate its sidewalls and extend along its circumference. The circumferential slits are arranged between adjacent first axial slits or adjacent second axial slits, and the orthographic projection structure of the circumferential slits on the induction coil is offset from the annular segment.

[0017] Alternatively, both the first and second shielding cages may have a plurality of circumferential slits extending through their sidewalls and along their circumference. The circumferential slits are provided between adjacent first axial slits and adjacent second axial slits. The axial positions of the circumferential slits on the first shielding cage are respectively offset from the axial positions of the circumferential slits on the second shielding cage. Furthermore, the orthographic projection structure of the circumferential slits on the induction coil is offset from the annular segment.

[0018] Optionally, the second shielding cage is provided with a connecting groove extending along the axial direction to connect adjacent circumferential slits.

[0019] The communicating groove is provided with a sealing member that can move axially. The sealing member can be moved axially so that at least a part of the sealing member moves into the circumferential slit to adjust the effective axial height of the circumferential slit.

[0020] Optionally, the sealing element includes two sub-sealing elements, and the two sub-sealing elements move axially within adjacent circumferential slits respectively to adjust the effective axial height of adjacent circumferential slits respectively.

[0021] Optionally, a plurality of elastic connectors are provided between the two sub-blocking members. The two ends of the elastic connectors are respectively connected to the two sub-blocking members. The elastic connectors can extend or shorten to make the two sub-blocking members move away from each other or towards each other along the axial direction, so as to reduce or increase the effective axial height of the circumferential slit.

[0022] Optionally, the reaction chamber further includes a rotating component, a rotatable component, and an operating component;

[0023] The rotating component is disposed in the communicating groove and its two ends are respectively slidably disposed with the two sub-blocking components. The rotating component is rotatably disposed in the communicating groove and connected to the rotating component.

[0024] The operating component is connected to the rotating component so that the rotating component rotates clockwise or counterclockwise around the rotating component as the rotation center, thereby driving the two sub-blocking components to move away from each other or towards each other.

[0025] Optionally, the length of the rotating component is less than or equal to the circumferential width of the connecting groove.

[0026] Optionally, the reaction chamber further includes a connecting ring, which surrounds the outside of the second shielding cage and is connected to the ends of a plurality of operating elements extending out of the communicating groove. The connecting ring is connected to a third driving part of the external device so that the connecting ring is driven by the third driving part to move the operating elements axially, thereby causing the rotating element to rotate clockwise or counterclockwise.

[0027] Optionally, the reaction chamber may further include a position monitoring device and a control device;

[0028] The position monitoring device is used to collect the circumferential width signal of the overlapping part of the first axial slit and the second axial slit in real time.

[0029] The control unit is electrically or communicatively connected to the position monitoring unit, the first drive unit, and the second drive unit, and the control unit is used to control the start or stop of the first drive unit and the second drive unit according to the circumferential width signal of the overlapping portion.

[0030] To achieve the above objectives, the present invention also provides a wafer processing apparatus, comprising:

[0031] The aforementioned reaction chamber;

[0032] A process gas supply system, connected to a quartz tube, supplies process gas, including hydrogen-containing gas, into the quartz tube.

[0033] A vacuum system, connected to the quartz tube, is used to extract gas from the quartz tube and maintain the required vacuum level in the quartz tube;

[0034] The radio frequency power supply is electrically connected to the first coil.

[0035] The beneficial effects of this invention are as follows:

[0036] This invention effectively solves the problem of quartz tube erosion caused by capacitive coupling in ICP equipment during high-hydrogen processes by setting up a relatively rotatable second and first shielding cage structure. Specifically, when the first axial slit and the second axial slit are perfectly aligned, the alternating magnetic field can enter the quartz tube through the first and second axial slits, achieving efficient ignition of the process gas and exciting stable plasma. After ignition, by rotating the first and / or second shielding cages, the first and second axial slits on them are misaligned or even completely closed, thereby blocking the continuous bombardment of the quartz tube wall by the low-potential plasma. This dynamically adjustable magnetic field path design not only ensures the plasma generation efficiency during the ignition stage but also effectively isolates the quartz tube from plasma erosion during steady-state processes, significantly reducing the risk of particulate contamination, extending the service life of the quartz tube, and improving wafer process yield. Attached Figure Description

[0037] Figure 1 This is a schematic diagram of the structure of a wafer processing device according to an embodiment of the present invention;

[0038] Figure 2 This is a schematic diagram of the structure of the quartz tube, the first shielding cage, and the second shielding cage in the reaction chamber of an embodiment of the present invention;

[0039] Figure 3 This is a schematic diagram of the structure of the second shielding cage in the reaction chamber according to an embodiment of the present invention;

[0040] Figure 4 This is a schematic diagram of the structure of two sub-sealing components, a rotating component, a rotating component, and an operating component in the reaction chamber of an embodiment of the present invention.

[0041] Explanation of reference numerals in the attached figures:

[0042] 1. Quartz tube; 2. Processing chamber; 3. Induction coil; 4. First shielding cage; 41. First axial slit; 5. Second shielding cage; 51. Second axial slit; 511. Slit segment; 52. Circumferential slit; 6. First drive unit; 7. Second drive unit; 8. Connecting groove; 9. Sealing component; 10. Elastic connector; 11. Rotating component; 12. Rotating component; 13. Operating component; 14. Connecting ring; 15. Vertical rod. Detailed Implementation

[0043] To make the objectives, technical solutions, and advantages of this invention clearer, the technical solutions in the embodiments of this invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of this invention. All other embodiments obtained by those skilled in the art based on the embodiments of this invention without inventive effort are within the scope of protection of this invention. Unless otherwise defined, the technical or scientific terms used herein should have the ordinary meaning understood by those skilled in the art. The terms "comprising" and similar expressions used herein mean that the element or object preceding the word covers the element or object listed following the word and its equivalents, but do not exclude other elements or objects.

[0044] To address the problems existing in the prior art, embodiments of the present invention provide a reaction chamber, such as... Figure 1 and Figure 2 As shown, the reaction chamber includes a quartz tube 1, an induction coil 3, a first shielding cage 4, and a second shielding cage 5.

[0045] In one embodiment, such as Figure 1 As shown, the quartz tube 1 is located at the top of the processing chamber 2.

[0046] In one embodiment, such as Figure 1 As shown, the induction coil 3 is arranged around the outside of the quartz tube 1 and connected to an external radio frequency power supply. It is used to generate an alternating magnetic field that can enter the quartz tube 1 and induce an eddy current electric field through the alternating magnetic field to accelerate the free electron collision with the process gas to generate plasma.

[0047] The alternating magnetic field mentioned in this invention can be understood as an alternating magnetic field or alternating magnetic field strength.

[0048] In one embodiment, such as Figure 2 As shown, the second shielding cage 5 is arranged around the quartz tube 1 and between the quartz tube 1 and the induction coil 3. The second shielding cage 5 has a plurality of second axial slits 51 that penetrate its sidewalls and the second axial slits 51 extend axially.

[0049] In one embodiment, such as Figure 2 As shown, the first shielding cage 4 is arranged around the outside of the quartz tube 1 and between the quartz tube 1 and the second shielding cage 5. The first shielding cage 4 has a plurality of first axial slits 41 that penetrate its sidewalls and extend along the axial direction. The first shielding cage 4 and / or the second shielding cage 5 can rotate around the axis of the quartz tube 1 so as to adjust the relative circumferential position of the first axial slit 41 and the second axial slit 51 by rotation, thereby controlling the opening and closing of the magnetic field path of the alternating magnetic field entering the quartz tube 1 and the circumferential width.

[0050] This embodiment achieves dynamic control of the magnetic field path for the alternating magnetic field to enter the quartz tube 1 through the relative rotation of the first shielding cage 4 and the second shielding cage 5. When the first axial slit 41 and the second axial slit 51 are aligned, the alternating magnetic field can smoothly enter the quartz tube 1 through the first axial slit 41 and the second axial slit 51, thereby efficiently exciting the plasma. When the first axial slit 41 and the second axial slit 51 are misaligned, the magnetic field path is completely blocked, thereby effectively preventing the low-potential plasma from moving towards the high-potential induction coil 3 when energized, and thus preventing the low-potential plasma from bombarding the wall of the quartz tube 1. This adjustable structure not only ensures the reliability of plasma ignition, but also significantly reduces the risk of erosion of the quartz tube 1 in the high-hydrogen process, thereby extending the equipment life and improving the yield of the wafer process.

[0051] Furthermore, the control of the circumferential width described in this embodiment can be understood as follows: assuming the circumferential widths of the first axial slit 41 and the second axial slit 51 are consistent and within the range of 1mm-100mm, when the first axial slit 41 and the second axial slit 51 are aligned and coincident, that is, when the opening of both the first axial slit 41 and the second axial slit 51 is set to the maximum value of 100mm, the maximum amount of alternating magnetic field entering is ensured. After ignition is completed (which can be understood as completing the acceleration of free ions), the second shielding cage 5 is driven... Alternatively, the rotation of the first shielding cage 4 can cause the second axial slit 51 and the first axial slit 41 to be relatively misaligned, thereby gradually reducing the overlapping area of ​​the first axial slit 41 and the second axial slit 51. This achieves circumferential width control of the overlapping area of ​​the first axial slit 41 and the second axial slit 51—that is, the path through which the alternating magnetic field enters the quartz tube—until the circumferential width of the overlapping area is less than 5 mm. This minimizes the amount of alternating magnetic field allowed to enter the quartz tube 1, or even blocks its entry. This reduces or prevents plasma from bombarding the inner wall of the quartz tube 1 from a low potential to a high potential.

[0052] The axial direction mentioned in this invention is parallel to the axis of the quartz tube 1.

[0053] In one embodiment, either the first shielding cage 4 or the second shielding cage 5 rotates individually around the axis of the quartz tube 1. Dynamic control of the magnetic field path can be achieved through the rotation of a single shielding cage, simplifying the drive structure and ensuring operational reliability. When the first shielding cage 4 or the second shielding cage 5 rotates individually around the axis of the quartz tube 1, the relative circumferential positions of the first axial slit 41 and the second axial slit 51 can be adjusted, thereby controlling the width of the passage for the alternating magnetic field into the quartz tube 1, or even completely closing it. For example, during the plasma ignition stage, rotation can be used to align the first axial slit 41 and the second axial slit 51 to establish a magnetic field path; after ignition is complete (which can be understood as accelerated free ions bombarding the process gas to generate plasma), the first axial slit 41 and the second axial slit 51 are misaligned to block the concentrated bombardment of the low-potential plasma on the wall of the quartz tube 1. This single-sided drive design, while ensuring adjustable plasma distribution, significantly reduces the complexity of the mechanical structure and manufacturing cost, and improves the stability and maintenance convenience of the system.

[0054] In another embodiment, both the first shielding cage 4 and the second shielding cage 5 are rotatable around the axis of the quartz tube 1. This embodiment, by allowing both the first shielding cage 4 and the second shielding cage 5 to rotate, achieves more flexible and precise control of the magnetic field path. When rapid plasma establishment is required (i.e., during ignition), both shielding cages can be rotated simultaneously to quickly align the first axial slit 41 with the second axial slit 51, thereby enhancing the magnetic field coupling efficiency. In steady-state processes (i.e., after ignition), their relative positions can be rapidly adjusted by separately adjusting the two cages, thereby maximizing the blocking of low-potential plasma bombardment of the quartz tube 1 wall.

[0055] In one embodiment, the circumferential width of the first axial slit 41 is smaller than the circumferential distance between two adjacent second axial slits 51 on the second shielding cage 5; the circumferential width of the second axial slit 51 is smaller than the circumferential distance between two adjacent first axial slits 41 on the first shielding cage 4. This embodiment, by making the circumferential width of the first axial slit 41 smaller than the circumferential distance between adjacent second axial slits 51 on the second shielding cage 5, and simultaneously making the circumferential width of the second axial slit 51 smaller than the circumferential distance between adjacent first axial slits 41 on the first shielding cage 4, ensures that, even when the first shielding cage 4 and the second shielding cage 5 are rotating relative to each other and after ignition, the first axial slit 41 and the second axial slit 51 are always in a completely misaligned or partially overlapping state, thereby achieving complete blocking of the magnetic field path or effective control of the circumferential width of the magnetic field path. This size design ensures that no matter how the first shielding cage 4 ring and the second shielding cage 5 rotate relative to each other, it can avoid the extreme situation of uncontrollable complete alignment or complete misalignment between the first axial slit 41 and the second axial slit 51. This not only ensures the reliability of plasma ignition, but also effectively prevents the low potential plasma from causing local erosion of the quartz tube 1 wall.

[0056] In one embodiment, such as Figure 1 As shown, the first shielding cage 4 is connected to a first driving unit 6 to drive the first shielding cage 4 to rotate around the axis of the quartz tube 1. In this embodiment, the first driving unit 6 independently drives the first shielding cage 4 to rotate around the axis of the quartz tube 1, which can achieve precise control of the magnetic field path with a single actuator, simplifying the mechanical structure and improving the system reliability.

[0057] In one embodiment, such as Figure 1 As shown, the second shielding cage 5 is connected to a second driving unit 7 to drive the second shielding cage 5 to rotate circumferentially around the quartz tube 1. In this embodiment, the second driving unit 7 independently drives the second shielding cage 5 to rotate circumferentially around the quartz tube 1, which enables flexible control of the magnetic field path while maintaining the first shielding cage 4 in a stationary state.

[0058] In one embodiment, the first drive unit 6 and the second drive unit 7 are connected to the top of the processing chamber 2 or to an external support bracket. This top-mounted or external support bracket installation provides a stable support foundation for the first drive unit 6 and the second drive unit 7, preventing vibration or thermal deformation from affecting the rotational accuracy of the shielding cage.

[0059] In one embodiment, the first drive unit 6 and the second drive unit 7 have identical structures. Furthermore, the specific structures of the first drive unit 6 and the second drive unit 7 can be drive devices with precise angle control functions, such as stepper motors, servo motors, or rotary cylinders. The first drive unit 6 and the second drive unit 7 are connected to the rotation shafts of the first shielding cage 4 and the second shielding cage 5 respectively via couplings or gear sets, enabling precise control of the rotation angle of the first shielding cage 4 and the second shielding cage 5 around the axis of the quartz tube 1.

[0060] In one embodiment, the axial heights of both the first axial slit 41 and the second axial slit 51 are greater than the axial height of the induction coil 3. This arrangement ensures that the alternating magnetic field can fully enter the quartz tube 1 through the slit pathways throughout the entire effective operating area of ​​the induction coil 3, avoiding uneven plasma excitation caused by insufficient coverage of the first axial slit 41 and the second axial slit 51. When the axial heights of the first axial slit 41 and the second axial slit 51 are greater than the axial height of the induction coil 3, regardless of where the alternating magnetic field generated by the induction coil 3 is strongest in the axial direction, it can enter the reaction chamber through the corresponding first axial slit 41 and second axial slit 51, thereby forming a uniformly distributed plasma in the axial direction of the quartz tube 1. This improves the ionization efficiency of the process gas and avoids concentrated plasma bombardment caused by excessively strong local magnetic fields, further reducing the risk of corrosion of the quartz tube 1.

[0061] In one embodiment, such as Figure 3 As shown, the induction coil 3 includes several annular segments spaced apart along the axial direction of the quartz tube 1, and several connecting segments connecting adjacent annular segments. Each first axial slit 41 and each second axial slit 51 is composed of several slit segments 511 arranged axially, and the number and axial position of the slit segments 511 correspond one-to-one with the number and axial position of the annular segments on the same axis. The orthographic projection structure of the slit segment 511 on the induction coil 3 at least partially covers the annular segment. This embodiment, by designing the first axial slit 41 and the second axial slit 51 as several slit segments 511 corresponding one-to-one with the annular segments of the induction coil 3, can achieve precise coupling and distribution control of the alternating magnetic field along the axial direction of the quartz tube 1. The orthographic projection structure of each slit segment 511 on the corresponding annular segment at least partially covers the annular segment, ensuring that the alternating magnetic field generated by each annular segment can efficiently enter the quartz tube 1 through the corresponding slit segment 511, avoiding plasma inhomogeneity problems caused by magnetic field leakage or local enhancement. This segmented matching design not only improves the uniformity and stability of plasma distribution in the axial direction, but also reduces the risk of concentrated bombardment of the quartz tube 1 wall by low potential plasma through the discrete layout of the slit segment 511, thereby significantly improving the process consistency of the high hydrogen process and the service life of the quartz tube 1.

[0062] In one embodiment, such as Figure 3 As shown, the axial height of the slit segment 511 is greater than that of the annular segment. This ensures that the alternating magnetic field generated by the annular segment can be effectively captured by the slit segment 511 and introduced into the interior of the quartz tube 1 within the axial range. This design improves the ionization efficiency of the process gas and avoids concentrated plasma bombardment caused by excessively strong local magnetic fields, thereby significantly reducing the risk of erosion of the quartz tube 1 wall during high-hydrogen processes, extending equipment lifespan, and improving wafer process yield.

[0063] In one embodiment, such as Figure 3 As shown, the first shielding cage 4 or the second shielding cage 5 has a plurality of circumferential slits 52 that penetrate its sidewall and extend circumferentially. The circumferential slits 52 are arranged between adjacent first axial slits 41 or adjacent second axial slits 51, and the orthographic projection structure of the circumferential slits 52 on the induction coil 3 is offset from the annular segment. This embodiment can further refine the control accuracy of plasma distribution by adding circumferential slits 52 between adjacent first axial slits 41 or adjacent second axial slits 51.

[0064] In some specific embodiments, a circumferential slit 52 is added between adjacent second axial slits 51, and no circumferential slit 52 is provided between adjacent first axial slits 41; or a circumferential slit 52 is added between adjacent first axial slits 41, and no circumferential slit 52 is provided between adjacent second axial slits 51. The docking state of the first axial slit 41, the second axial slit 51, and the circumferential slit 52 includes: when the first axial slit 41 and the second axial slit 51 are aligned and overlapped, the circumferential slit 52 on the first shielding cage 4 does not overlap with the second axial slit 51, and simultaneously, the circumferential slit 52 on the second shielding cage 5 is aligned with the first axial slit 41. The axial slits 41 do not overlap; when the first axial slit 41 and the second axial slit 51 are misaligned, the circumferential slit 52 on the first shielding cage 4 partially overlaps with the second axial slit 51, and at the same time, the circumferential slit 52 on the second shielding cage 5 partially overlaps with the first axial slit 41, thereby forming a more complex magnetic field path combination in the circumference of the quartz tube 1. This can maintain the stability of the basic plasma even when the second axial slit 51 and the first axial slit 41 are completely misaligned, through the overlap of the circumferential slit 52 on the second shielding cage 5 with the first axial slit 41 or the overlap of the circumferential slit 52 on the first shielding cage 4 with the second axial slit 51.

[0065] In one embodiment, both the first shielding cage 4 and the second shielding cage 5 are provided with a plurality of circumferential slits 52 that penetrate their sidewalls and extend circumferentially. A circumferential slit 52 is provided between adjacent first axial slits 41 and adjacent second axial slits 51, and the axial positions of the circumferential slits 52 on the first shielding cage 4 are staggered from the axial positions of the circumferential slits 52 on the second shielding cage 5. This embodiment, by providing circumferential slits 52 on both the first shielding cage 4 and the second shielding cage 5 and staggering their axial positions, enables multi-dimensional fine control of plasma distribution. When the first axial slit 41 and the second axial slit 51 are used in conjunction with the circumferential slit 52, a more complex magnetic field path combination can be formed in the circumference of the quartz tube 1: the first axial slit 41 and the second axial slit 51 control the main magnetic field path, while the staggered circumferential slit 52 can provide an auxiliary magnetic field path when the first axial slit 41 and the second axial slit 51 are completely staggered. This can maintain basic stability during the plasma ignition stage and achieve gradient control of plasma density through relative rotation in the steady-state process.

[0066] In one embodiment, such as Figure 3 As shown, two circumferential slits 52 are provided between two adjacent slit segments 511. This enables fine axial control of the plasma distribution. When the axial slit segment 511 and the circumferential slit 52 are used in combination, a more complex magnetic field path combination can be formed in the quartz tube 1: the axial slit segment 511 controls the main magnetic field path, while the two circumferential slits 52 can provide auxiliary magnetic field paths when the axial slit segments 511 on the first axial slit 41 and the second axial slit 51 are completely misaligned. This can maintain basic stability during the plasma ignition stage and achieve gradient control of plasma density through relative rotation in the steady-state process.

[0067] In one embodiment, such as Figure 3As shown, the axial height between two adjacent circumferential slits 52 is greater than the axial height of the annular segment. This embodiment, by making the axial height between the two circumferential slits 52 greater than the axial height of the annular segment of the induction coil 3, ensures that the annular segment does not overlap with the circumferential slits 52, thereby preventing plasma from bombarding the inner wall of the quartz tube 1 through the interaction between the circumferential slits 52 and the annular segment. Specifically, when a portion of the second axial slit 51 overlaps and aligns with the circumferential slits 52 on the first shielding cage 4, since the height of the annular segment is less than the spacing between the circumferential slits 52, the annular segment will not overlap with the circumferential slits 52. This can be understood as the annular segment being blocked by the wall of the first or second shielding cage between the two circumferential slits 52, thereby blocking the magnetic field path between the annular segment and the plasma. This design ensures efficient plasma excitation when the first axial slit 41 and the second axial slit 51 are aligned, while maintaining basic plasma stability through the circumferential slit 52 when the first axial slit 41 and the second axial slit 51 are misaligned. Simultaneously, it effectively prevents low-potential plasma from concentrating and bombarding the inner wall of the quartz tube 1 through the circumferential slit 52, significantly reducing the risk of erosion in high-hydrogen processes. Furthermore, by adjusting the rotation of the second shielding cage 5 and the first shielding cage 4, the position of the overlap alignment between the second axial slit 51 and the circumferential slit 52 is adjusted. This circumferential movement controls the amount of alternating magnetic field entering the quartz tube 1, thereby controlling the plasma concentration distribution around the circumference of the quartz tube 1.

[0068] In one embodiment, such as Figure 4 As shown, the second shielding cage 5 is provided with an axially extending connecting groove 8 to connect adjacent circumferential slits 52. An axially movable sealing member 9 is provided within the connecting groove 8. The sealing member 9 moves axially so that at least a portion of it moves into the circumferential slit 52, thereby adjusting the effective axial height of the circumferential slit 52. This embodiment, through the axially movable sealing member 9 within the connecting groove 8, can dynamically adjust the effective axial height of the circumferential slit 52, thereby achieving multi-level fine control of plasma distribution. When the sealing member 9 partially or completely enters the circumferential slit 52, it can limit the cross-sectional area of ​​the alternating magnetic field passing through the circumferential slit 52, thereby controlling the plasma concentration distribution along the axial direction of the quartz tube 1. This design is particularly suitable for process scenarios requiring adjustment of plasma uniformity: for example, during etching or resist removal processes, the axial displacement of the sealing member 9 can change the amount of alternating magnetic field entering along the axial direction, thereby controlling the plasma concentration distribution along the axial direction of the quartz tube 1.

[0069] In one embodiment, such as Figure 4As shown, the sealing component 9 includes two sub-sealing components, which move axially within adjacent circumferential slits 52 to adjust the effective axial height of the adjacent circumferential slits 52. This enables precise and coordinated control of the effective axial height of the two adjacent circumferential slits 52. When the two sub-sealing components move axially within adjacent circumferential slits 52, the cross-sectional area through which the magnetic field passes through the two adjacent circumferential slits 52 can be adjusted, thereby flexibly controlling the plasma concentration distribution in different axial regions of the quartz tube 1. This design is particularly suitable for process scenarios requiring adjustment of plasma uniformity, and can improve the uniformity of wafer surface treatment during etching or resist removal. Specifically, by controlling the axial plasma concentration distribution, i.e., controlling the plasma concentration distribution in the upper region directly acting on different radial positions of the wafer surface, the difference in plasma density between the edge and the center caused by the inherent characteristics of the electromagnetic field distribution can be directly and accurately compensated.

[0070] In one embodiment, such as Figure 4 As shown, a plurality of elastic connectors 10 are provided between the two sub-blocking components. The two ends of each elastic connector 10 are connected to the two sub-blocking components respectively. The elastic connectors 10 extend or shorten, causing the two sub-blocking components to move axially away from or towards each other, thereby reducing or increasing the effective axial height of the circumferential slit 52. This enables synchronous reverse movement of the two sub-blocking components, thus precisely adjusting the effective axial height of adjacent circumferential slits 52. When the elastic connector 10 extends, the two sub-blocking components move away from each other, reducing the overlap height between adjacent circumferential slits 52 and the first axial slit 41 or the second axial slit 51, reducing the amount of alternating magnetic field entering the quartz tube 1 and thus lowering the plasma density. When the elastic connector 10 shortens, the two sub-blocking components move towards each other, increasing the overlap height between adjacent circumferential slits 52 and the first axial slit 41 or the second axial slit 51, thereby increasing the plasma concentration. This flexible drive design not only simplifies the mechanical structure and avoids complex independent drive mechanisms, but also ensures the synchronization and stability of bidirectional motion through the self-adaptability of the flexible connector 10, significantly improving the accuracy and reliability of plasma distribution control, while reducing system complexity and maintenance costs.

[0071] The overlap height referred to in this invention is the spatial height that allows the alternating magnetic field to enter the quartz tube 1.

[0072] In one embodiment, the structure of the elastic connector 10 can be a component with axial expansion and contraction characteristics, such as a helical spring, a bellows, or an elastic rubber sleeve, with its two ends fixedly connected to two sub-sealing components respectively.

[0073] In one embodiment, such as Figure 4As shown, the reaction chamber further includes a rotating component 12, a rotating component 11, and an operating component 13. The rotating component 11 is disposed in the communicating groove 8 and its two ends are slidably disposed with respect to the two sub-sealing components. The rotating component 12 is rotatably disposed within the communicating groove 8 and connected to the rotating component 11. The operating component 13 is connected to the rotating component 11 so that the rotating component 11 rotates clockwise or counterclockwise around the rotating component 12 as the rotation center, thereby driving the two sub-sealing components to move away from each other or towards each other. This embodiment, through the linkage mechanism of the rotating component 12, the rotating component 11, and the operating component 13, can efficiently convert the rotational motion of the rotating component 11 into the synchronous axial motion of the two sub-sealing components, achieving precise control of the effective axial height of the circumferential slit 52. When the operating component 13 drives the rotating component 11 to rotate clockwise or counterclockwise around the rotating component 12, it can drive the two sub-sealing components to move away from each other or towards each other, thereby increasing or decreasing the overlap height between the circumferential slit 52 and the first axial slit 41 or the second axial slit 51.

[0074] In one embodiment, the rotating component 12 can be a mechanical component with high-precision rotational support function, such as a precision bearing, ball bearing disc, or low-friction pivot. The rotating component 12 is located within the connecting groove 8, serving as the rotation fulcrum of the rotating component 11, ensuring that the rotating component 11 rotates smoothly around its center clockwise or counterclockwise under the drive of the operating component 13. This rotational support design ensures the synchronous accuracy of the two sub-blocking components moving in opposite directions or towards each other, and reduces mechanical loss through the low-friction structure, thereby achieving reliable control of the effective axial height of the circumferential slit 52 and improving the stability and repeatability of plasma distribution control.

[0075] In one embodiment, the rotating component 11 can be an X-shaped cross hinge or a linkage mechanism with symmetrical grooves, with its two ends slidably connected to two sub-blocking components via sliders or rollers. The rotating component 11, with the rotating component 12 as a fulcrum, can rotate precisely around an axis under the drive of the operating component 13: when rotating clockwise, the rotating component 11 pulls the two sub-blocking components towards each other to increase the effective axial height of the circumferential slit 52 (the effective axial height can be understood as the axial height of the passage that allows the alternating magnetic field to enter the quartz tube 1); when rotating counterclockwise, it pushes the two sub-blocking components away from each other to decrease the effective axial height of the circumferential slit 52. This lever-type transmission design converts a single axial drive into a bidirectional symmetrical motion, avoiding complex multi-drive mechanisms and improving the control accuracy of plasma distribution through mechanical gain effects, while also enhancing the system's reliability and ease of maintenance.

[0076] In one embodiment, the structure of the operating member 13 can be a transmission component with precise axial displacement control function, such as a push rod, lead screw, or linear motor. The operating member 13 is connected to the rotating member 11 by a hinge. When the operating member 13 is driven by an external force to move axially, it can pull or push the rotating member 11 to rotate clockwise or counterclockwise around the center of the rotating member 12, thereby causing the two sub-blocking members to move away from each other or towards each other.

[0077] In one embodiment, the length of the rotating component 11 is less than or equal to the circumferential width of the connecting groove 8. This ensures that the rotating component 11 rotates smoothly within the connecting groove 8 without interfering with the groove wall. During rotation, the two ends of the rotating component 11 are connected to two sub-blocking components via sliding mechanisms. When the length of the rotating component 11 is appropriate, jamming or frictional wear caused by excessive length can be avoided. Simultaneously, it ensures that the rotating component 11 accurately transmits torque under the drive of the operating component 13, enabling the two sub-blocking components to move synchronously away from each other or towards each other. This optimized size design improves the reliability and repeatability of the circumferential slit height adjustment and extends the service life of moving parts by reducing the risk of mechanical interference, thereby ensuring the long-term stability of plasma distribution control.

[0078] In one embodiment, such as Figure 3 As shown, the reaction chamber also includes a connecting ring 14, which surrounds the outside of the second shielding cage 5 and connects to the ends of the plurality of operating components 13 extending out of the communicating groove 8. The connecting ring 14 is connected to the third driving unit of the external device, so that the connecting ring 14 is driven by the third driving unit to drive the operating components 13 to move axially, thereby causing the rotating component 11 to rotate clockwise or counterclockwise. This embodiment, through the cooperation of the connecting ring 14 and the third driving unit, can achieve synchronous axial drive of the plurality of circumferential operating components 13, thereby efficiently controlling the movement of all sub-blocking components. The connecting ring 14 surrounds the outside of the second shielding cage 5 and connects to the ends of each operating component 13 extending out of the communicating groove 8. When the third driving unit of the external device drives the connecting ring 14 to move axially, it can drive all operating components 13 to move synchronously. This design achieves unified adjustment of the effective height of multiple circumferential slits 52 through a single driving source, which simplifies the driving structure and ensures the overall uniformity of plasma distribution along the axial direction of the quartz tube 1, significantly improving the efficiency and consistency of process control.

[0079] In one embodiment, the third driving unit has the same structure as the first driving unit 6, which will not be described again here.

[0080] In one embodiment, several connecting rings 14 are spaced apart along the axial direction, and these connecting rings 14 are connected by vertical rods 15. This embodiment, by arranging several connecting rings 14 spaced apart along the axial direction and rigidly connecting them by vertical rods 15, can construct a rigid drive network distributed along the axial direction, achieving synchronous and stable linkage control of multiple operating components 13 at different axial positions. When the third drive unit of the peripheral device drives any one of the connecting rings 14 to move axially, through the transmission of the vertical rods, all connecting rings 14 and their connected operating components 13 will move synchronously, thereby controlling the synchronous operation of sub-blocking components at different axial positions.

[0081] In one embodiment, the reaction chamber further includes a position monitoring device and a control device. The position monitoring device is used to acquire, in real time, the circumferential width signal of the overlapping portion of the first axial slit 41 and the second axial slit 51. The control device is electrically or communicatively connected to the position monitoring device, the first drive unit 6, and the second drive unit 7, and is used to control the start or stop of the first drive unit 6 and the second drive unit 7 according to the circumferential width signal of the overlapping portion. This embodiment achieves real-time monitoring and precise control of the circumferential width of the overlapping portion of the first axial slit 41 and the second axial slit 51 through a closed-loop feedback system of the position monitoring device and the control device. The position monitoring device acquires the circumferential width of the overlapping portion of the first axial slit 41 and the second axial slit 51 in real time and feeds it back to the control device as a control signal. When the first axial slit 41 and the second axial slit 51 are detected to be aligned or misaligned, the control device can immediately control the first drive unit 6 and / or the second drive unit 7 to stop, so that the first shielding cage 4 and / or the second shielding cage 5 stops rotating to lock the current state.

[0082] In one embodiment, the position monitoring device can also be used to monitor the plasma distribution signal inside the quartz tube 1 in real time. The control device, based on the plasma distribution signal, controls the relative rotation of the first drive unit 6 and the second drive unit 7, which in turn rotates the first shielding cage 4 and the second shielding cage 5. This adjusts the circumferential rotation of the second axial slit 51 or the first axial slit 41 relative to the circumferential slit 52, thereby adjusting the circumferential overlap between the second axial slit 51 or the first axial slit 41 and the circumferential slit 52, and thus dynamically adjusts the plasma concentration distribution inside the quartz tube 1. This embodiment uses the position monitoring device to collect the plasma distribution signal inside the quartz tube 1 in real time, forming a closed-loop feedback system with the control device, the first drive unit 6, and the second drive unit 7. Circumferential motion adjustment achieves dynamic and precise control of the plasma concentration distribution. Based on the plasma distribution signal, the control device, by controlling the first drive unit 6 and the second drive unit 7 to drive the relative rotation of the first shielding cage 4 and the second shielding cage 5, dynamically adjusts the circumferential overlap alignment position of the second axial slit 51 and the circumferential slit 52, thereby changing the distribution of the magnetic field path. This feedback control mechanism based on real-time process data can automatically compensate for process fluctuations and optimize plasma uniformity. It is particularly suitable for advanced processes with extremely high uniformity requirements. While improving process consistency and wafer yield, it also enhances the equipment's adaptability and intelligence.

[0083] In one embodiment, the position monitoring device is specifically a non-contact, high-precision detection device such as an optical sensor or a laser displacement meter. Its detection end is positioned facing the first axial slit 41 and the second axial slit 51 via a window or sensor mounting base to monitor the circumferential width of the overlapping alignment position of the first axial slit 41 and the second axial slit 51 in real time. This position monitoring device can non-invasively acquire spectral signals of the relative position of the first axial slit 41 and the second axial slit 51 or the plasma distribution within the quartz tube 1 (monitoring the plasma distribution can be achieved by monitoring the difference in its spectrum), and convert the signals into electrical signals for transmission to the control unit.

[0084] In one embodiment, the controller is specifically a programmable logic controller, an industrial computer, or a dedicated motion control card, possessing multi-axis motion control and real-time data acquisition and processing capabilities. This controller connects to a position monitoring unit, a first drive unit 6, and a second drive unit 7 via a communication interface. It can receive and process control signals or plasma distribution signals from the position monitoring unit in real time, and generate precise drive commands accordingly. It controls the start, stop, direction, and speed of the first drive unit 6 and the second drive unit 7 via pulse, analog, or bus communication methods. This integrated control design achieves automation and closed-loop feedback in magnetic field path adjustment, ensuring the accuracy, stability, and process repeatability of plasma distribution control.

[0085] To address the problems existing in the prior art, embodiments of the present invention also provide a wafer processing apparatus, such as... Figure 1 The device includes the aforementioned reaction chamber, process gas supply system, vacuum system, and radio frequency (RF) power supply. The process gas supply system is connected to the quartz tube 1 to supply process gas, including hydrogen-containing gas, into the quartz tube 1. The vacuum system is also connected to the quartz tube 1 to extract gas from the tube and maintain the required vacuum level. The RF power supply is electrically connected to the first coil. This embodiment integrates the reaction chamber with the process gas supply system, vacuum system, and RF power supply to form a complete and controllable high-hydrogen plasma wafer processing device. The process gas supply system precisely supplies hydrogen-containing process gas, the vacuum system maintains the clean vacuum environment required for the reaction, and the RF power supply provides energy to the induction coil 3 to excite and maintain a uniform and stable high-density plasma. This integrated design enables the equipment to dynamically adjust the magnetic field path using the rotatable first shielding cage 4 and second shielding cage 5 in the reaction chamber under precise and controllable process conditions. This effectively controls the plasma distribution, achieving efficient wafer processing while significantly reducing the bombardment and erosion of the quartz tube 1 wall by hydrogen ions, thus improving process stability, uniformity, and the service life of the quartz tube 1.

[0086] In one embodiment, the wafer processing equipment can specifically be a chemical vapor deposition (CVD) system, a plasma etching system, or a plasma resist stripping system. This equipment dynamically adjusts the magnetic field path through a rotatable shielding cage structure, thereby precisely controlling the distribution of plasma within the reaction chamber. In the deposition process, this design improves the uniformity and density of thin film growth; in the etching process, it enables high-precision, anisotropic pattern transfer; and in the resist stripping process, it efficiently and uniformly removes photoresist while reducing damage to underlying materials. By integrating process gas supply, vacuum maintenance, and radio frequency excitation systems, this equipment provides a highly controllable, stable, and efficient plasma processing platform for advanced semiconductor manufacturing.

[0087] While embodiments of the present invention have been described in detail above, it will be apparent to those skilled in the art that various modifications and variations can be made to these embodiments. However, it should be understood that such modifications and variations fall within the scope and spirit of the present invention. Furthermore, the present invention described herein may have other embodiments and can be implemented or carried out in various ways.

Claims

1. A reaction chamber, characterized in that, include: Quartz tubes are located at the top of the processing chamber; An induction coil is arranged around the outside of the quartz tube and connected to an external radio frequency power supply to generate an alternating magnetic field that can enter the quartz tube. The induction coil includes several annular segments arranged at intervals along the axial direction of the quartz tube. The second shielding cage is arranged around the quartz tube and between the quartz tube and the induction coil. The second shielding cage has a plurality of second axial slits that penetrate its sidewalls and extend axially. A first shielding cage is arranged around the quartz tube and between the quartz tube and the second shielding cage. The first shielding cage has a plurality of first axial slits penetrating its sidewalls and the first axial slits extend along the axial direction. The first shielding cage and / or the second shielding cage can rotate about the axis of the quartz tube. Each of the first axial slits and each of the second axial slits is composed of a plurality of slit segments arranged along the axial direction. The number and axial position of the slit segments correspond one-to-one with the number and axial position of the annular segments on the same axis. The orthographic projection structure of the slit segments on the induction coil at least partially covers the annular segments.

2. The reaction chamber according to claim 1, characterized in that, The circumferential width of the first axial slit is smaller than the circumferential distance between two adjacent second axial slits on the second shielding cage; The circumferential width of the second axial slit is less than the circumferential distance between two adjacent first axial slits on the first shielding cage.

3. The reaction chamber according to claim 1, characterized in that, The first shielding cage is connected to a first driving unit to drive the first shielding cage to rotate around the axis of the quartz tube; And / or the second shielding cage is connected to a second drive unit to drive the second shielding cage to rotate circumferentially around the quartz tube.

4. The reaction chamber according to claim 1, characterized in that, The axial heights of both the first and second axial slits are greater than the axial height of the induction coil.

5. The reaction chamber according to claim 1, characterized in that, The induction coil also includes several connecting segments that connect two adjacent annular segments.

6. The reaction chamber according to claim 5, characterized in that, The first shielding cage or the second shielding cage has a plurality of circumferential slits that penetrate its sidewalls and extend along its circumference. The circumferential slits are arranged between adjacent first axial slits or adjacent second axial slits, and the orthographic projection structure of the circumferential slits on the induction coil is offset from the annular segment. Alternatively, both the first and second shielding cages may have a plurality of circumferential slits extending through their sidewalls and along their circumference. The circumferential slits are provided between adjacent first axial slits and adjacent second axial slits. The axial positions of the circumferential slits on the first shielding cage are respectively offset from the axial positions of the circumferential slits on the second shielding cage. Furthermore, the orthographic projection structure of the circumferential slits on the induction coil is offset from the annular segment.

7. The reaction chamber according to claim 6, characterized in that, The second shielding cage is provided with a connecting groove extending along the axial direction to connect adjacent circumferential slits; The communicating groove is provided with a sealing member that can move axially. The sealing member can be moved axially so that at least a part of the sealing member moves into the circumferential slit, thereby adjusting the effective axial height of the circumferential slit.

8. The reaction chamber according to claim 7, characterized in that, The sealing element includes two sub-sealing elements, and the two sub-sealing elements move axially within adjacent circumferential slits to adjust the effective axial height of the adjacent circumferential slits respectively.

9. The reaction chamber according to claim 8, characterized in that, A plurality of elastic connectors are provided between the two sub-blocking components. The two ends of the elastic connectors are respectively connected to the two sub-blocking components. The elastic connectors can extend or shorten to make the two sub-blocking components move away from each other or towards each other along the axial direction, so as to reduce or increase the effective axial height of the circumferential slit.

10. The reaction chamber according to claim 9, characterized in that, It also includes rotating parts, swivel parts, and operating parts; The rotating component is disposed in the communicating groove and its two ends are respectively slidably disposed with the two sub-blocking components. The rotating component is rotatably disposed in the communicating groove and connected to the rotating component. The operating component is connected to the rotating component so that the rotating component rotates clockwise or counterclockwise around the rotating component as the rotation center, thereby driving the two sub-blocking components to move away from each other or towards each other.

11. The reaction chamber according to claim 10, characterized in that, The length of the rotating component is less than or equal to the circumferential width of the connecting groove.

12. The reaction chamber according to claim 10, characterized in that, It also includes a connecting ring, which surrounds the outside of the second shielding cage and is connected to the ends of a plurality of operating members extending out of the communicating groove. The connecting ring is connected to a third driving part of the external device so that the connecting ring is driven by the third driving part to drive the operating member to move axially, thereby causing the rotating member to rotate clockwise or counterclockwise.

13. The reaction chamber according to claim 3, characterized in that, It also includes location monitoring components and control components; The position monitoring device is used to collect the circumferential width signal of the overlapping part of the first axial slit and the second axial slit in real time. The control unit is electrically or communicatively connected to the position monitoring unit, the first drive unit, and the second drive unit, and the control unit is used to control the start or stop of the first drive unit and the second drive unit according to the circumferential width signal of the overlapping portion.

14. A wafer processing apparatus, characterized in that, Its features include: The reaction chamber as described in any one of claims 1 to 13; A process gas supply system, connected to a quartz tube, supplies process gas, including hydrogen-containing gas, into the quartz tube. A vacuum system, connected to the quartz tube, is used to extract gas from the quartz tube and maintain the required vacuum level in the quartz tube; The radio frequency power supply is electrically connected to the first coil.

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