Light-emitting panel and manufacturing method thereof

Abstract

The invention provides a light-emitting panel and a manufacturing method thereof. The light-emitting panel comprises a driving substrate, a first passivation layer, a plurality of epitaxial units and a plurality of lenses, the first passivation layer is located on the driving substrate, a plurality of grooves are formed in the first passivation layer, the opening area of the grooves is larger than the bottom surface area of the grooves, the multiple epitaxial units are located in the multiple grooves respectively, and the multiple epitaxial units are electrically connected with the driving substrate through the bottoms of the grooves; the plurality of lenses respectively cover the openings of the plurality of grooves.

Description

TECHNICAL FIELD

[0001] The present disclosure relates to the technical field of display, in particular to a light-emitting panel and a manufacturing method thereof. BACKGROUND

[0002] Micro light-emitting diodes can be used to manufacture light-emitting panels with ultra-high resolution due to their small size. Light-emitting panels manufactured by micro light-emitting diodes are currently a hot topic in the field of display technology.

[0003] The related art provides a light-emitting panel including a driving substrate and a plurality of light-emitting units, the plurality of light-emitting units being electrically connected to the driving substrate to form the light-emitting panel.

[0004] The light-emitting panel described above has low brightness due to process precision problems. SUMMARY

[0005] Embodiments of the present disclosure provide a light-emitting panel and a manufacturing method thereof, which can improve the brightness of the light-emitting panel. The technical solutions are as follows: In one aspect, a light-emitting panel is provided, which includes: a driving substrate, a first passivation layer, a plurality of epitaxial units, and a plurality of lenses; The first passivation layer is located on the driving substrate, the first passivation layer is provided with a plurality of recesses, the opening area of the recess is greater than the bottom area of the recess, the plurality of epitaxial units are respectively located in the plurality of recesses, and the plurality of epitaxial units are electrically connected to the driving substrate through the bottom of the recess; The plurality of lenses respectively cover the openings of the plurality of recesses.

[0006] The bottom of each recess is provided with a first through hole; The light-emitting panel further includes a first electrode located in the first through hole, the first electrode being electrically connected to the epitaxial unit and the driving substrate, respectively.

[0007] Optionally, the light-emitting panel further includes a reflective layer, a second passivation layer, and a contact layer which are sequentially stacked in each recess, the reflective layer is attached to the side wall of the recess, one side of the contact layer is connected to the epitaxial unit, the first electrode sequentially passes through the reflective layer and the second passivation layer, and the first electrode is connected to the contact layer.

[0008] Optionally, the light-emitting panel further includes a third passivation layer and a transparent conductive layer located between the first passivation layer and the lens, the third passivation layer covers the opening of the recess, the third passivation layer has a plurality of second through holes, and the transparent conductive layer is connected to the other side of the plurality of epitaxial units through the plurality of second through holes, respectively.

[0009] Optionally, the light-emitting panel further comprises a second electrode connected with the transparent conductive layer, the second electrode being located between adjacent lenses.

[0010] Optionally, a cross section of the groove in a direction perpendicular to a surface of the driving substrate is an inverted trapezoid.

[0011] Optionally, a thickness of the epitaxial unit is 0.8-1.5 μm.

[0012] Optionally, a minimum distance between adjacent grooves is 0.3-1.5 μm.

[0013] In another aspect, a method for manufacturing a light-emitting panel, the method comprising: manufacturing a first passivation layer and a plurality of epitaxial units, the first passivation layer being provided with a plurality of grooves, an opening area of the groove being greater than a bottom area of the groove, the plurality of epitaxial units being respectively located in the plurality of grooves; bonding the first passivation layer to a driving substrate, the plurality of epitaxial units being electrically connected to the driving substrate through the bottom of the groove; mounting a plurality of lenses, the plurality of lenses respectively covering the openings of the plurality of grooves.

[0014] Optionally, the manufacturing of the first passivation layer and the plurality of epitaxial units comprises: manufacturing an epitaxial layer, the epitaxial layer having a plurality of stepped structures; manufacturing a first passivation layer covering the plurality of stepped structures; after the first passivation layer is bonded to the driving substrate, thinning the epitaxial layer so that the plurality of stepped structures are separated from each other to obtain the plurality of epitaxial units.

[0015] The technical scheme provided by the embodiments of the present disclosure has the following beneficial effects: In the embodiments of the present disclosure, the first passivation layer is located on the driving substrate, the first passivation layer is provided with a plurality of grooves, and the plurality of epitaxial units are respectively located in the plurality of grooves and electrically connected to the driving substrate through the bottom of the groove. The first passivation layer completely covers the sidewalls and the bottom of the epitaxial structure, which can avoid light crosstalk between adjacent epitaxial units, realize light isolation between the epitaxial units, and improve the display contrast. The opening area of the groove is greater than the bottom area of the groove, and more light can be reflected to the light-emitting surface through the sidewall of the groove, and the light-emitting area of the epitaxial unit is larger, which is more conducive to light emission and further improves the brightness of the light-emitting panel. The plurality of lenses respectively cover the openings of the plurality of grooves, so that light is more efficiently emitted from the grooves to the air, and the brightness of the light-emitting panel is improved again. BRIEF DESCRIPTION OF DRAWINGS

[0016] In order to more clearly illustrate the technical solutions in the embodiments of the present disclosure, the drawings needed to be used in the embodiments will be briefly introduced as follows. Obviously, the drawings in the following description are only some embodiments of the present disclosure, and other drawings can be obtained by those skilled in the art without creative effort based on these drawings.

[0017] Figure 1 FIG. 1 is a structural schematic diagram of a light-emitting panel provided by an embodiment of the present disclosure; Figure 2 FIG. 2 is a top view of a light-emitting panel provided by an embodiment of the present disclosure; Figure 3 FIG. 3 is a flowchart of a light-emitting panel manufacturing method provided by an embodiment of the present disclosure; Figure 4 FIG. 4 is a flowchart of a light-emitting panel manufacturing method provided by an embodiment of the present disclosure; Figure 5 FIG. 5 is a structural schematic diagram in a light-emitting panel manufacturing process provided by an embodiment of the present disclosure; Figure 6 FIG. 6 is a structural schematic diagram in a light-emitting panel manufacturing process provided by an embodiment of the present disclosure; Figure 7 FIG. 7 is a structural schematic diagram in a light-emitting panel manufacturing process provided by an embodiment of the present disclosure; Figure 8 FIG. 8 is a structural schematic diagram in a light-emitting panel manufacturing process provided by an embodiment of the present disclosure; Figure 9 FIG. 9 is a structural schematic diagram in a light-emitting panel manufacturing process provided by an embodiment of the present disclosure; Figure 10 FIG. 10 is a structural schematic diagram in a light-emitting panel manufacturing process provided by an embodiment of the present disclosure; Figure 11 FIG. 11 is a structural schematic diagram in a light-emitting panel manufacturing process provided by an embodiment of the present disclosure; Figure 12 FIG. 12 is a structural schematic diagram in a light-emitting panel manufacturing process provided by an embodiment of the present disclosure; Figure 13 FIG. 13 is a structural schematic diagram in a light-emitting panel manufacturing process provided by an embodiment of the present disclosure; Figure 14 FIG. 14 is a structural schematic diagram in a light-emitting panel manufacturing process provided by an embodiment of the present disclosure; Figure 15 FIG. 15 is a structural schematic diagram in a light-emitting panel manufacturing process provided by an embodiment of the present disclosure; Figure 16 FIG. 16 is a structural schematic diagram in a light-emitting panel manufacturing process provided by an embodiment of the present disclosure.

[0018] The reference signs are as follows: 100: driving substrate; 200: first passivation layer; 300: epitaxial unit; 400: lens; 1000: temporary substrate; 1001: groove; 1002: first via hole; 1003: second via hole; 1004: via hole; 101: substrate; 102: fourth passivation layer; 103: connection electrode; 104: planarization film layer; 201: first electrode; 202: reflection layer; 203: second passivation layer; 204: contact layer; 205: third passivation layer; 206: transparent conductive layer; 207: second electrode; 208: fourth passivation layer; 310: epitaxial layer; 3001: first semiconductor layer; 3002: active layer; 3003: second semiconductor layer; 301: Input Output (IO) interface; R: base angle. DETAILED DESCRIPTION

[0019] To make the objectives, technical solutions and advantages of the present disclosure clearer, the following will further describe the embodiments of the present disclosure in combination with the drawings.

[0020] Figure 1 is a structural schematic diagram of a light-emitting panel provided by an embodiment of the present disclosure. Referring to Figure 1 , the light-emitting panel comprises a driving substrate 100, a first passivation layer 200, a plurality of epitaxial units 300 and a plurality of lenses 400.

[0021] The first passivation layer 200 is located on the driving substrate 100, the first passivation layer 200 is provided with a plurality of grooves 1001, the opening area of the groove 1001 is greater than the bottom area of the groove 1001, the plurality of epitaxial units 300 are respectively located in the plurality of grooves 1001, and the plurality of epitaxial units 300 are electrically connected with the driving substrate 100 through the bottom of the groove 1001.

[0022] The plurality of lenses 400 respectively cover the openings of the plurality of grooves 1001.

[0023] In the embodiments of the present disclosure, the first passivation layer is located on the driving substrate, the first passivation layer is provided with a plurality of recesses, the plurality of recesses can enable the plurality of epitaxial units to be respectively located in the plurality of recesses and electrically connected with the driving substrate, the complete coating of the epitaxial structure side wall and bottom surface is achieved, the first passivation layer can avoid light crosstalk between adjacent epitaxial units, the optical isolation between the epitaxial units is achieved, and the display contrast is improved; the opening area of the recess is greater than the bottom surface area of the recess, the light passing through the side wall of the recess can refract more light to the light emitting surface, and the light emitting area of the epitaxial unit is larger, which is more conducive to light emission, and the luminance of the light emitting panel is further improved; the plurality of lenses respectively cover the openings of the plurality of recesses, the lenses change the propagation direction of light by refraction, reduce the hindrance of the inner wall reflection of the recess to light emission, so that light is more efficiently emitted from the recess to the air, and the luminance of the light emitting panel is further improved.

[0024] In the embodiments of the present disclosure, the driving substrate 100 is a complementary metal-oxide-semiconductor (CMOS) driving substrate.

[0025] In the embodiments of the present disclosure, the driving substrate 100 can include a substrate 101, a fourth passivation layer 102, and a connection electrode 103. As shown in FIG. 1, the fourth passivation layer 102 covers the substrate 101, the fourth passivation layer 102 is provided with a through hole, and the connection electrode 103 is located in the through hole and electrically connected with the substrate 101. The substrate 101 includes a circuit structure for receiving an electrical signal and then driving each pixel (epitaxial unit) of the panel to emit light. Figure 1

[0026] In the embodiments of the present disclosure, the fourth passivation layer 208 can be a SiO2 layer.

[0027] In the embodiments of the present disclosure, the connection electrode 103 can be a stack of a Cu layer, an Al layer, and an Au layer.

[0028] In the embodiments of the present disclosure, the first passivation layer 200 can be a SiO2 layer or a SiN layer.

[0029] In the embodiments of the present disclosure, the thickness of the first passivation layer 200 can be 1-5 μm.

[0030] Exemplarily, the thickness of the first passivation layer 200 is 2 μm.

[0031] In the embodiments of the present disclosure, the angle of the bottom angle R of the epitaxial unit 300 can be 45-80°.

[0032] Exemplarily, the angle of the bottom angle R of the epitaxial unit 300 is 65°.

[0033] ​The bottom corner of the epitaxial unit 300 refers to a bottom corner of the epitaxial unit 300 close to the light-emitting surface.

[0034] In the embodiment of the present disclosure, the epitaxial unit 300 comprises a first semiconductor layer 3001, an active layer 3002 and a second semiconductor layer 3003 which are sequentially stacked, and the light-emitting surface is a top surface of the first semiconductor layer 3001.

[0035] In the embodiment of the present disclosure, the first semiconductor layer 3001 can be a P-type semiconductor layer, and the second semiconductor layer 3003 can be an N-type semiconductor layer. The active layer 3002 can be a multi-quantum well layer.

[0036] For example, the first semiconductor layer 3001 can comprise a P-type AlInGaP layer, the second semiconductor layer 3003 can comprise an N-type AlInGaP layer, and the active layer 3002 can comprise a plurality of periodically and alternately stacked AlInGaP quantum well layers and AlInGaP quantum barrier layers.

[0037] Alternatively, the first semiconductor layer 3001 can comprise a P-type GaN layer, the second semiconductor layer 3003 can comprise an N-type GaN layer, and the active layer 3002 can comprise an InGaN / GaN multi-quantum well structure.

[0038] In another example, the first semiconductor layer 3001 can be an N-type semiconductor layer, and the second semiconductor layer 3003 can be a P-type semiconductor layer. The active layer 3002 can be a multi-quantum well layer.

[0039] In the embodiment of the present disclosure, the lens 400 can be a SiO2 lens or a SiN lens.

[0040] In the embodiment of the present disclosure, the bottom of each groove 1001 is provided with a first through hole 1002.

[0041] As shown in FIG. 1, the light-emitting panel further comprises a first electrode 201, the first electrode 201 being located in the first through hole 1002, and the first electrode 201 being electrically connected with the epitaxial unit 300 and the driving substrate 100 respectively. Figure 1

[0042] In this implementation, the bottom of each groove is provided with a first through hole, and the first electrode can pass through the first through hole to realize electrical connection between the epitaxial unit and the driving substrate.

[0043] For example, each first electrode 201 is electrically connected with one connection electrode 103 of the driving substrate 100 respectively.

[0044] In the embodiment of the present disclosure, the first electrode 201 can be a metal electrode composed of Cu, Al and Au.

[0045] ​In the embodiments of the present disclosure, the first electrode 201 can be an N electrode.

[0046] In another example, the first electrode 201 can be a P electrode.

[0047] In the embodiments of the present disclosure, the light-emitting panel further comprises: a reflective layer 202, a second passivation layer 203 and a contact layer 204 which are sequentially stacked in each groove 1001, the reflective layer 202 is attached to the sidewall of the groove 1001, the contact layer 204 is connected to one side of the epitaxial unit 300, the first electrode 201 sequentially passes through the reflective layer 202 and the second passivation layer 203, and the first electrode 201 is connected to the contact layer 204.

[0048] In this implementation, the attachment of the reflective layer to the sidewall of the groove can improve the reflectivity of the sidewall of the groove to the light, thereby improving the brightness of the light-emitting panel; the connection of the contact layer to one side of the epitaxial unit can increase the current spreading area of the surface of the epitaxial unit, thereby improving the brightness of the light-emitting panel; and the sequential passing of the first electrode through the reflective layer and the second passivation layer and the connection of the first electrode to the contact layer can enable the epitaxial unit and the driving substrate to be electrically connected.

[0049] In the embodiments of the present disclosure, the reflective layer 202 can be a metal stack containing Al or Ag.

[0050] For example, the reflective layer 202 is a stack of Ti, Al, Pt and Ti, or a stack of Ag, Ni and TiW.

[0051] In the embodiments of the present disclosure, the second passivation layer 203 can be a SiO2 layer.

[0052] In the embodiments of the present disclosure, the thickness of the second passivation layer 203 can be 2000-5000 angstroms.

[0053] For example, the thickness of the second passivation layer 203 is 2400 angstroms.

[0054] In the embodiments of the present disclosure, the thickness of the contact layer 204 can be 200-1500 angstroms.

[0055] In this implementation, the contact layer not only realizes electrical connection, but also realizes current spreading. The above thickness can ensure the full realization of the above functions, and will not affect the light-emitting effect.

[0056] For example, the thickness of the contact layer 204 is 600 angstroms.

[0057] In the embodiments of the present disclosure, the contact layer 204 can be an Indium Tin Oxide (ITO) layer.

[0058] In the implementation, the ITO has good transparency and conductivity, and can conduct current to form an electrical connection while light passes through.

[0059] In the embodiment of the present disclosure, the light-emitting panel further comprises a third passivation layer 205 and a transparent conductive layer 206 between the first passivation layer 200 and the lens 400, the third passivation layer 205 covers the opening of the groove 1001, the third passivation layer 205 has a plurality of second through holes 1003, and the transparent conductive layer 206 is connected to the other side of the plurality of epitaxial units 300 through the plurality of second through holes 1003 respectively.

[0060] In the implementation, the third passivation layer between the first passivation layer and the lens covers the opening of the groove, which can isolate the epitaxial units and avoid short circuit; the third passivation layer has a plurality of second through holes, and the transparent conductive layer is connected to the other side of the plurality of epitaxial units through the plurality of second through holes respectively, and then connected to the electrode, which can realize the common electrode design on this side and improve the current spreading area and the brightness of the light-emitting diode.

[0061] In the embodiment of the present disclosure, the third passivation layer 205 can be a SiO2 layer, a SiN layer or an Al2O3 layer.

[0062] In the embodiment of the present disclosure, the transparent conductive layer 206 can be an ITO layer.

[0063] In the embodiment of the present disclosure, the transparent conductive layer 206 can be a full-surface structure, covering the third passivation layer 205 and the epitaxial unit 300, and the transparent conductive layer 206 is formed with a recess above the epitaxial unit.

[0064] In the embodiment of the present disclosure, the light-emitting panel further comprises a second electrode 207, the second electrode 207 is connected to the transparent conductive layer 206, and the second electrode 207 is located between adjacent lenses 400.

[0065] In the implementation, the second electrode is located between adjacent lenses, which can realize current conduction while not blocking the light-emitting unit; in addition, the second electrode is located between adjacent lenses, which can also isolate the light of adjacent light-emitting units to avoid light crosstalk.

[0066] In the embodiment of the present disclosure, the second electrode 207 can be a metal electrode composed of Cu, Al and Au.

[0067] In the embodiment of the present disclosure, the second electrode 207 can be a P electrode.

[0068] In another example, the second electrode 207 can be an N electrode.

[0069] In the embodiment of the present disclosure, the second electrode 207 can be electrically connected to the driving substrate 100 at the edge region.

[0070] In the embodiment of the present disclosure, the second electrode 207 is a mesh structure, and the mesh structure comprises a plurality of units, and each unit surrounds an epitaxial unit.

[0071] Exemplarily, the epitaxial unit can be a circular truncated cone structure, and correspondingly, each unit of the second electrode 207 is also a circular structure.

[0072] In the direction perpendicular to the light-emitting surface, each side of the second electrode 207 is a trapezoid.

[0073] As shown in the figure, the slope of the trapezoid of the second electrode 207 is the same as the slope of the side wall of the groove 1001, thereby ensuring smooth light emission. Figure 1

[0074] In the embodiment of the present disclosure, the lens 400 can be a semi-spherical shape.

[0075] In the embodiment of the present disclosure, the lens 400 covers the transparent conductive layer 206 and is located at the opening of the unit of the second electrode 207.

[0076] In the embodiment of the present disclosure, the cross section of the groove 1001 in the direction perpendicular to the light-emitting surface is an inverted trapezoid.

[0077] In this implementation, the cross section of the groove in the direction perpendicular to the surface of the driving substrate is an inverted trapezoid. Compared with the general trapezoidal structure, the light-emitting area of the inverted trapezoid is larger, and the side wall of the inverted trapezoid can refract more light to the light-emitting surface, which is more conducive to light emission.

[0078] In the embodiment of the present disclosure, the thickness of the epitaxial unit 300 can be 0.8-1.5 μm.

[0079] In this implementation, the thickness of the epitaxial unit 300 is 0.8-1.5 μm. The thickness of the epitaxial unit is not too thick or too thin. This thickness can match the epitaxial unit with the groove, the groove completely covers the side wall and the bottom surface of the epitaxial unit, and does not block the light-emitting path of the epitaxial unit, thereby improving the brightness of the light-emitting unit.

[0080] Exemplarily, the thickness of the epitaxial unit 300 is 1 μm.

[0081] As shown in the figure, the surface of the epitaxial unit 300 is flush with the opening of the groove 1001. Figure 1

[0082] In the embodiment of the present disclosure, the minimum distance between adjacent grooves 1001 can be 0.3-1.5 μm.

[0083] ​​In the implementation, the minimum distance between the adjacent grooves is 0.3-1.5 μm. The distance between the adjacent grooves cannot be too small, otherwise the distance between the adjacent epitaxial units is too close, and short circuit is prone to occur. The distance between the adjacent grooves cannot be too large, otherwise the number of epitaxial units in a unit area is too small, and the luminance of the light-emitting panel is low.

[0084] For example, the minimum distance between the adjacent grooves is 0.8 μm.

[0085] Figure 2 is a top view of a light-emitting panel provided by an embodiment of the present disclosure. Referring to Figure 2 , the light-emitting panel can be a light-emitting panel.

[0086] The light-emitting panel includes a plurality of pixels arranged in an array, each pixel being an epitaxial unit 300. The light-emitting panel further includes an IO interface 301 located at an edge region of the light-emitting panel.

[0087] In the embodiment of the present disclosure, the IO interface 301 is a channel for data transmission between the light-emitting panel and an external device. The IO interface 301 is connected with a circuit in the driving substrate, and the operation of each pixel of the light-emitting panel is driven by providing an electrical signal to the circuit in the driving substrate.

[0088] Figure 3 is a flow chart of a method for manufacturing a light-emitting panel provided by an embodiment of the present disclosure. Referring to Figure 3 , the method steps include: S11, manufacturing a first passivation layer and a plurality of epitaxial units, the first passivation layer being provided with a plurality of grooves, the opening area of the groove being greater than the bottom area of the groove, and the plurality of epitaxial units being respectively located in the plurality of grooves.

[0089] S12, bonding the first passivation layer to a driving substrate, and the plurality of epitaxial units being electrically connected with the driving substrate through the bottom of the groove.

[0090] S13, installing a plurality of lenses, the plurality of lenses respectively covering the openings of the plurality of grooves.

[0091] In the embodiments of the present disclosure, the first passivation layer is located on the driving substrate, the first passivation layer is provided with a plurality of recesses, and the plurality of epitaxial units are respectively located in the plurality of recesses and are electrically connected with the driving substrate through the bottom of the recess. The first passivation layer realizes complete covering of the side wall and bottom surface of the epitaxial structure, can avoid light crosstalk between adjacent epitaxial units, realizes light isolation between the epitaxial units, and improves the display contrast; the opening area of the recess is larger than the bottom area of the recess, light passing through the side wall of the recess can reflect more light to the light emitting surface, and the light emitting area of the epitaxial unit is larger, which is more conducive to light emission, and further improves the brightness of the light emitting panel.

[0092] Figure 4 A flow chart of a method for manufacturing a light emitting panel is provided in the embodiments of the present disclosure. Referring to Figure 4 The method steps include: S21, manufacturing an epitaxial layer on a temporary substrate.

[0093] In the embodiments of the present disclosure, the temporary substrate can be a sapphire substrate or a GaAS substrate.

[0094] Exemplarily, step S21 can include: First, manufacturing a second semiconductor layer.

[0095] In the embodiments of the present disclosure, the second semiconductor layer can be an N-type semiconductor layer.

[0096] For example, when the temporary substrate is a GaAS substrate, the second semiconductor layer can include an N-type AlInGaP layer.

[0097] Or, when the temporary substrate is a sapphire substrate, the second semiconductor layer can include an N-type GaN layer.

[0098] In another example, the second semiconductor layer can be a P-type semiconductor layer Second, manufacturing an active layer.

[0099] In the embodiments of the present disclosure, the active layer can be a multi-quantum well layer.

[0100] For example, when the temporary substrate is a GaAS substrate, the active layer can include a plurality of periodically alternating AlInGaP quantum well layers and AlInGaP quantum barrier layers.

[0101] Or, when the temporary substrate is a sapphire substrate, the active layer can include an InGaN / GaN multi-quantum well structure.

[0102] In another example, the active layer can be a multi-quantum well layer.

[0103] Thirdly, a first semiconductor layer is made.

[0104] In the embodiments of the present disclosure, the first semiconductor layer can be a P-type semiconductor layer, For example, when the temporary substrate is a GaAS substrate, the first semiconductor layer of the light emitting diode can include a P-type AlInGaP layer.

[0105] Or, when the temporary substrate is a sapphire substrate, the first semiconductor layer can include a P-type GaN layer.

[0106] In another example, the first semiconductor layer can be an N-type semiconductor layer.

[0107] Figure 5 is a structural schematic diagram in a light emitting panel manufacturing process provided by the embodiments of the present disclosure. Referring to Figure 5 , the epitaxial layer 310 is located on the temporary substrate 1000.

[0108] S22, a contact layer is made on the epitaxial layer.

[0109] Exemplarily, the step S22 can include: Firstly, a contact film layer is made.

[0110] In the embodiments of the present disclosure, the thickness of the contact film layer can be 200-1500 angstroms.

[0111] Exemplarily, the thickness of the contact film layer is 600 angstroms.

[0112] In the embodiments of the present disclosure, the contact film layer can be an ITO layer.

[0113] Secondly, the contact film layer is annealed to form the contact layer.

[0114] Figure 6 is a structural schematic diagram in a light emitting panel manufacturing process provided by the embodiments of the present disclosure. Referring to Figure 6 , the contact layer 204 is located on the epitaxial layer 310.

[0115] S23, the epitaxial layer and the contact layer are subjected to a patterning process.

[0116] Figure 7 is a structural schematic diagram in a light emitting panel manufacturing process provided by the embodiments of the present disclosure. Referring to Figure 7 , the contact layer 204 and the epitaxial layer 310 are subjected to a patterning process on the basis of Figure 6 to form a step structure. The diameter of the step structure of the epitaxial layer 310 can be 0.5-50 μm, for example, 4 μm; the depth of the mesa of the step structure can be 1.3-3.5 μm, for example, 2 μm; and the sidewall angle of the step structure can be 45-80°, for example, 65°.

[0117] S24, manufacturing a second passivation layer.

[0118] Exemplarily, step S24 can include: First, manufacturing a second passivation film layer.

[0119] In the embodiments of the present disclosure, the second passivation film layer can be a SiO2 layer.

[0120] In the embodiments of the present disclosure, the thickness of the second passivation film layer can be 2000-5000 angstroms.

[0121] Exemplarily, the thickness of the second passivation film layer is 2400 angstroms.

[0122] Second, opening a hole in the second passivation film layer to form a second passivation layer.

[0123] Figure 8 is a structural schematic diagram in a process of manufacturing a light emitting panel provided by the embodiments of the present disclosure. Referring to Figure 8 , the second passivation layer 203 covers the epitaxial layer 310 and the contact layer 204, and the second passivation layer 203 has a through hole 1004 corresponding to the aforementioned contact layer 204.

[0124] S25, manufacturing a reflection layer.

[0125] In the embodiments of the present disclosure, the reflection layer can be a metal stack containing Al or Ag.

[0126] Exemplarily, the reflection layer is a stack of Ti, Al, Pt and Ti or a stack of Ag, Ni and TiW.

[0127] Figure 9 is a structural schematic diagram in a process of manufacturing a light emitting panel provided by the embodiments of the present disclosure. Referring to Figure 9 , the reflection layer 202 covers the second passivation layer 203, and the through hole passing through the second passivation layer 203 is connected with the contact layer 204.

[0128] S26, manufacturing a first passivation layer.

[0129] Exemplarily, step S26 can include: First, manufacturing a first passivation layer.

[0130] In the embodiments of the present disclosure, the first passivation layer can be a SiO2 layer or a SiN layer.

[0131] Second, thinning and polishing the first passivation layer.

[0132] In the embodiments of the present disclosure, the first passivation layer is subjected to chemical mechanical polishing (CMP).

[0133] In the embodiment of the present disclosure, the first passivation layer has a thickness of 1-5 μm after polishing.

[0134] For example, the first passivation layer has a thickness of 2 μm after polishing.

[0135] In the third step, the first passivation layer is patterned to form the first through hole.

[0136] In the S27, the first electrode is made, and the first electrode is located in the first through hole and electrically connected with the epitaxial layer.

[0137] In the embodiment of the present disclosure, the first electrode can be a metal electrode composed of Cu, Al and Au.

[0138] In the embodiment of the present disclosure, the first electrode can be a P electrode.

[0139] In another example, the first electrode can be an N electrode.

[0140] Figure 10 is a structural schematic diagram in the process of manufacturing the light emitting panel provided by the embodiment of the present disclosure. Referring to Figure 10 , the first passivation layer 200 covers the reflective layer 202, and the first passivation layer 200 is provided with the first through hole 1002, and the first electrode 201 is located in the first through hole 1002, and the first electrode 201 is electrically connected with the epitaxial layer 310.

[0141] In the S28, the driving substrate is provided.

[0142] In the embodiment of the present disclosure, the driving substrate is a CMOS driving substrate.

[0143] For example, the CMOS driving substrate includes a thin film transistor circuit, and the thin film transistor is used as a switch to control the on-off and current size of each light emitting diode.

[0144] In the S29, the epitaxial layer is bonded to the driving substrate.

[0145] In the embodiment of the present disclosure, the bonding glue is used to bond the epitaxial layer to the driving substrate. When bonding, the step structure of the epitaxial layer and the driving substrate are aligned, so that the first electrode and the connecting electrode are electrically connected.

[0146] In the S30, the temporary substrate is peeled off.

[0147] In the embodiment of the present disclosure, when the temporary substrate is a sapphire substrate, the laser is used to peel off the temporary substrate.

[0148] In the embodiment of the present disclosure, the wavelength of the laser used for peeling off can be 248 nm or 266 nm, and the energy density can be 50-300 mj / cm 2 .

[0149] Exemplarily, the peeling laser wavelength is 248 nm, and the energy density is 150 mj / cm 2 .

[0150] In the embodiment of the present disclosure, when the temporary substrate is a GaAS substrate, the temporary substrate is peeled off by wet etching.

[0151] In the embodiment of the present disclosure, the solution for wet etching can be a mixed solution of ammonia and hydrogen peroxide.

[0152] In the embodiment of the present disclosure, the ratio of ammonia and hydrogen peroxide can be 1:10 to 1:0.2.

[0153] Exemplarily, the ratio of ammonia and hydrogen peroxide is 3:1.

[0154] Figure 11 is a structural schematic diagram in a light-emitting panel manufacturing process provided by the embodiment of the present disclosure. Referring to Figure 11 , the first passivation layer 200 of the epitaxial layer 310 is bonded to the fourth passivation layer 102 of the driving substrate 100, and the temporary substrate 1000 is peeled off. Figure 10 S31, thinning the epitaxial layer to obtain a plurality of epitaxial units.

[0155] In the embodiment of the present disclosure, the epitaxial layer is thinned by chemical mechanical polishing (CMP) grinding the epitaxial surface.

[0156]

[0157] is a structural schematic diagram in a light-emitting panel manufacturing process provided by the embodiment of the present disclosure. Referring to Figure 12 , the first semiconductor layer 3001 of the epitaxial layer 310 is thinned to form a plurality of epitaxial units 300, and the thickness of the epitaxial unit 300 obtained after thinning is 1.3-3.5 μm. Figure 12 Figure 11 In the , the plurality of step structures of the epitaxial layer are connected, and after thinning in step S31, the plurality of steps are separated to form a plurality of epitaxial units 300.

[0158] Figure 11 S32, manufacturing a third passivation layer on the epitaxial structure.

[0159] In the embodiment of the present disclosure, the third passivation layer is manufactured by atomic layer deposition (ALD).

[0160] In the embodiment of the present disclosure, the third passivation layer is manufactured by atomic layer deposition (ALD).

[0161] ​In the embodiments of the present disclosure, the third passivation layer can be a SiO2 layer, a SiN layer or an Al2O3 layer.

[0162] In the embodiments of the present disclosure, the thickness of the third passivation layer can be 200-1200 angstroms.

[0163] Exemplarily, the thickness of the third passivation layer is 600 angstroms.

[0164] Figure 13 is a structural schematic diagram in the process of manufacturing a light-emitting panel provided by the embodiments of the present disclosure. Referring to Figure 13 The third passivation layer 205 covers the epitaxial unit 300 and the first passivation layer 200, and the third passivation layer 205 has a plurality of second through holes 1003 at the epitaxial unit 300. The size of the second through hole 1003 is smaller than the size of the surface of the epitaxial unit 300 close to the third passivation layer 205. For example, the surface of the epitaxial unit 300 and the second through hole 1003 are both circular, and the diameter of the second through hole 1003 is smaller than the diameter of the surface of the epitaxial unit 300 close to the third passivation layer 205.

[0165] S33, manufacturing a transparent conductive layer on the third passivation layer.

[0166] In the embodiments of the present disclosure, the transparent conductive layer can be an ITO layer.

[0167] Figure 14 is a structural schematic diagram in the process of manufacturing a light-emitting panel provided by the embodiments of the present disclosure. Referring to Figure 14 The transparent conductive layer 206 is on the third passivation layer 205, and the transparent conductive layer 206 is connected with the epitaxial unit 300 through the third passivation layer 205.

[0168] S34, manufacturing a second electrode.

[0169] In the embodiments of the present disclosure, the second electrode can be a metal electrode composed of Cu, Al and Au.

[0170] In the embodiments of the present disclosure, the second electrode can be a P electrode.

[0171] In another example, the second electrode can be an N electrode.

[0172] Figure 15 is a structural schematic diagram in the process of manufacturing a light-emitting panel provided by the embodiments of the present disclosure. Referring to Figure 15 The second electrode 207 is on the transparent conductive layer 206.

[0173] S35, manufacturing a plurality of lenses.

[0174] Exemplarily, step S35 can include: Firstly, depositing a planarization film layer.

[0175] In the embodiments of the present disclosure, the planarization film layer is a SiO2 layer or a SiN layer.

[0176] In the embodiments of the present disclosure, the thickness of the planarization film layer can be 1-10 μm, for example, 3 μm.

[0177] Figure 16 is a structural schematic diagram in a process of manufacturing a light-emitting panel provided by the embodiments of the present disclosure. Referring to Figure 16 , the planarization film layer 104 covers the transparent conductive layer 206 and the second electrode 207.

[0178] In the second step, the planarization film layer is subjected to a patterning process to form a plurality of lenses.

[0179] The above merely provides optional embodiments of the present disclosure but does not intend to limit the present disclosure. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present disclosure shall be included in the protection scope of the present disclosure.

Claims

1. A light-emitting panel, characterized in that, The light-emitting panel includes: a driving substrate (100), a first passivation layer (200), a plurality of epitaxial units (300) and a plurality of lenses (400). The first passivation layer (200) is located on the driving substrate (100). The first passivation layer (200) has a plurality of grooves (1001). The opening area of ​​the grooves (1001) is larger than the bottom area of ​​the grooves (1001). The plurality of epitaxial units (300) are respectively located in the plurality of grooves (1001). The plurality of epitaxial units (300) are electrically connected to the driving substrate (100) through the bottom of the grooves (1001). The plurality of lenses (400) respectively cover the openings of the plurality of grooves (1001).

2. The light-emitting panel according to claim 1, characterized in that, Each of the grooves (1001) has a first through hole (1002) at its bottom. The light-emitting panel further includes a first electrode (201), which is located inside the first through hole (1002) and is electrically connected to the epitaxial unit (300) and the driving substrate (100) respectively.

3. The light-emitting panel according to claim 2, characterized in that, The light-emitting panel further includes a reflective layer (202), a second passivation layer (203), and a contact layer (204) stacked sequentially in each of the grooves (1001). The reflective layer (202) is attached to the sidewall of the groove (1001), the contact layer (204) is connected to one side of the epitaxial unit (300), the first electrode (201) passes through the reflective layer (202) and the second passivation layer (203) sequentially, and the first electrode (201) is connected to the contact layer (204).

4. The light-emitting panel according to any one of claims 1 to 3, characterized in that, The light-emitting panel further includes a third passivation layer (205) and a transparent conductive layer (206) located between the first passivation layer (200) and the lens (400). The third passivation layer (205) covers the opening of the groove (1001). The third passivation layer (205) has a plurality of second through holes (1003). The transparent conductive layer (206) is connected to the other side of the plurality of epitaxial units (300) through the plurality of second through holes (1003).

5. The light-emitting panel according to claim 4, characterized in that, The light-emitting panel further includes a second electrode (207), which is connected to the transparent conductive layer (206) and is located between adjacent lenses (400).

6. The light-emitting panel according to any one of claims 1 to 3, characterized in that, The groove (1001) has an inverted trapezoidal cross section in the direction perpendicular to the surface of the driving substrate (100).

7. The light-emitting panel according to any one of claims 1 to 3, characterized in that, The thickness of the epitaxial unit (300) is 0.8~1.5μm.

8. The light-emitting panel according to any one of claims 1 to 3, characterized in that, The minimum distance between adjacent grooves (1001) is 0.3~1.5μm.

9. A method for manufacturing a light-emitting panel, characterized in that, The method includes: A first passivation layer and multiple epitaxial units are fabricated. The first passivation layer has multiple grooves, the opening area of ​​which is larger than the bottom area of ​​which is larger. The multiple epitaxial units are respectively located in the multiple grooves. The first passivation layer is bonded to the driving substrate, and the plurality of epitaxial units are electrically connected to the driving substrate through the bottom of the groove; Multiple lenses are installed, each lens covering the opening of one of the multiple grooves.

10. The method according to claim 9, characterized in that, The fabrication of the first passivation layer and multiple epitaxial units includes: An epitaxial layer is fabricated, wherein the epitaxial layer has a multiple step structure; A first passivation layer is fabricated covering the plurality of stepped structures; After the first passivation layer is bonded to the driving substrate, the epitaxial layer is thinned so that the plurality of stepped structures are separated from each other, thereby obtaining the plurality of epitaxial units.

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