Film thickness measuring method and device, computer equipment and storage medium

Abstract

The invention relates to a film thickness measuring method and device, computer equipment and a storage medium. The film layer thickness measuring method comprises the steps that a thickness change curve of a gate oxide layer is acquired, and the thickness change curve is used for representing the thickness change of the gate oxide layer along with the change of waiting time; depositing a gate oxide layer and a gate layer to be measured in sequence; obtaining the total thickness of the gate oxide layer and the to-be-measured gate layer; and based on the total thickness and the thickness change curve, determining that the difference value between the total thickness and the thickness of the gate oxide layer is the thickness of the gate layer to be measured. According to the invention, the precision and accuracy of gate layer thickness measurement are improved.

Description

Technical Field

[0001] This disclosure relates to the field of semiconductor measurement technology, and in particular to a method and apparatus for measuring film thickness, a computer device, and a storage medium. Background Technology

[0002] With the development of the semiconductor industry, the performance and density of transistors in integrated circuits are continuously improving, following Moore's Law. However, once transistors shrink to a certain size, simply reducing their geometric dimensions is insufficient to meet the demands for performance enhancement. Therefore, to bridge this performance gap, equivalent expansion techniques have become crucial for improving transistor performance when the transistor's geometric dimensions are sufficiently small. For example, high-k metal materials (where k is the dielectric constant) can be used as the gate in transistors to effectively improve performance. However, effectively controlling the thickness and process stability of these high-k metal materials has become critical to the integrated circuit manufacturing process. Summary of the Invention

[0003] Based on this, embodiments of this disclosure provide a method and apparatus for measuring film thickness, a computer device, and a storage medium, which are used to improve the accuracy and precision of gate layer thickness measurement, so as to effectively control the thickness and process stability of the gate layer, thereby improving the performance of semiconductor devices.

[0004] To achieve the above objectives, in a first aspect, this disclosure provides a method for measuring film thickness, comprising the following steps.

[0005] Obtain the thickness variation curve of the gate oxide layer, which is used to characterize the thickness variation of the gate oxide layer with the waiting time.

[0006] The gate oxide layer and the gate layer to be tested are deposited sequentially.

[0007] Obtain the total thickness of the gate oxide layer and the gate layer under test.

[0008] Based on the total thickness and the thickness variation curve, the difference between the total thickness and the thickness of the gate oxide layer is determined as the thickness of the gate layer to be tested.

[0009] In some embodiments of this disclosure, obtaining the thickness variation curve of the gate oxide layer includes the following steps.

[0010] Deposit the first gate oxide test layer.

[0011] The thickness of the first gate oxide test layer was monitored online at different waiting times.

[0012] Based on the correspondence between different thicknesses of the first gate oxide test layer and different waiting times, the thickness variation curve of the gate oxide layer is determined.

[0013] In some embodiments of this disclosure, the thickness of the first gate oxide test layer is monitored online using a single-wavelength ellipsometer.

[0014] In some embodiments of this disclosure, the film thickness measurement method further includes the following steps.

[0015] Multiple second gate oxide test layers were deposited separately.

[0016] The thickness of each second gate oxide test layer after offline measurement at different waiting times is used as the reference thickness.

[0017] Based on the correspondence between different waiting times and corresponding reference thicknesses, the thickness variation curve of the corrected gate oxide layer is calibrated.

[0018] In some embodiments of this disclosure, the thickness of each second gate oxide test layer is measured offline using X-ray photoelectron spectroscopy and / or transmission electron microscopy.

[0019] In some embodiments of this disclosure, the thickness variation curve of the gate oxide layer is a first logarithmic curve, and the expression of the first logarithmic curve is: Y=B+In x Where Y is the thickness of the gate oxide layer, B is the initial deposition thickness of the gate oxide layer, and X is the waiting time.

[0020] In some embodiments of this disclosure, determining the difference between the total thickness and the thickness of the gate oxide layer as the thickness of the gate layer to be tested, based on the total thickness and the thickness variation curve, may include the following steps.

[0021] A thickness measurement model is constructed based on the deposition process of the gate oxide layer and the gate layer under test, as well as the total thickness.

[0022] The thickness of the gate oxide layer is loaded into the thickness measurement model according to the thickness variation curve.

[0023] The thickness of the gate layer to be measured is the difference between the total thickness and the thickness of the gate oxide layer, which is output by the thickness measurement model.

[0024] In some embodiments of this disclosure, the thickness measurement model is a spectral ellipsometry measurement model. The total thickness of the gate oxide layer and the gate layer under test is monitored online using a spectral ellipsometry.

[0025] In some embodiments of this disclosure, the gate layer to be tested includes a transition metal oxide layer or a high-k metal layer.

[0026] Secondly, this disclosure also provides a film thickness measurement device, including an acquisition module and a measurement module. The acquisition module is used to acquire a thickness variation curve of a gate oxide layer, the thickness variation curve being used to characterize the thickness variation of the gate oxide layer with waiting time. The measurement module is used to acquire the total thickness of the gate oxide layer and the gate layer under test after sequentially depositing the gate oxide layer and the gate layer under test, and based on the total thickness and the thickness variation curve, determine the difference between the total thickness and the thickness of the gate oxide layer as the thickness of the gate layer under test.

[0027] Thirdly, this disclosure also provides a computer device. The computer device includes a memory and a processor, the memory storing a computer program, and the processor executing the computer program to implement the method steps described in any one of the first aspects.

[0028] Fourthly, this disclosure also provides a computer-readable storage medium. The computer-readable storage medium stores a computer program thereon, which, when executed by a processor, implements the method steps described in any one of the first aspects.

[0029] The embodiments disclosed herein may have, or at least have, the following advantages:

[0030] In this embodiment, by obtaining the thickness variation curve of the gate oxide layer, the thickness variation of the gate oxide layer with waiting time (i.e., Q-Time) can be accurately characterized. Thus, after sequentially depositing the gate oxide layer and the gate layer under test (DUT), by obtaining the total thickness of the gate oxide layer and the DUT, the difference between the total thickness of the gate oxide layer and the DUT and the thickness of the gate oxide layer can be accurately determined as the thickness of the DUT, based on the total thickness and the thickness variation curve. This improves the accuracy and precision of gate layer thickness measurement, effectively controls the gate layer thickness and process stability, and ultimately enhances semiconductor device performance.

[0031] Details of one or more embodiments of this disclosure are set forth in the following drawings and description. Other features, objects, and advantages of this disclosure will become apparent from the specification, drawings, and claims. Attached Figure Description

[0032] To more clearly illustrate the technical solutions in the embodiments or conventional technologies of this disclosure, the accompanying drawings used in the description of the embodiments or conventional technologies will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this disclosure. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0033] Figure 1 This is a flowchart illustrating a film thickness measurement method in some embodiments;

[0034] Figure 2 This is a flowchart illustrating the steps for obtaining the thickness variation curve of a gate oxide layer in some embodiments;

[0035] Figure 3 This is a flowchart illustrating the steps for obtaining the thickness variation curve of another gate oxide layer in some embodiments;

[0036] Figure 4 This is a graph showing the thickness variation of a gate oxide layer as a function of waiting time in some embodiments.

[0037] Figure 5 This is a schematic diagram of a stacked gate layer and gate oxide layer deposition structure in some embodiments;

[0038] Figure 6 This is a flowchart illustrating the thickness measurement steps of a gate layer under test in some embodiments;

[0039] Figure 7 This is a graph showing the thickness variation of a gate layer as a function of waiting time in some embodiments.

[0040] Figure 8 This is a structural block diagram of a film thickness measuring device in some embodiments;

[0041] Figure 9 This is a structural block diagram of another film thickness measuring device in some embodiments;

[0042] Figure 10 This is an internal structural diagram of a computer device in some embodiments. Detailed Implementation

[0043] The following specific examples illustrate the implementation of the present invention. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention. It should be noted that, unless otherwise specified, the following embodiments and features described therein can be combined with each other.

[0044] Some exemplary embodiments of the invention have been described for illustrative purposes. It should be understood that the invention may be implemented in other ways not specifically shown in the accompanying drawings.

[0045] To facilitate understanding of this disclosure, a more complete description will now be given with reference to the accompanying drawings, in which preferred embodiments of the present disclosure are shown. However, this disclosure may be implemented in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.

[0046] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure belongs. The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of this disclosure.

[0047] It should be understood that when an element or layer is referred to as being "on," "adjacent to," or "connected to" other elements or layers, it may be directly on, adjacent to, connected to, or coupled to other elements or layers, or there may be intervening elements or layers. It should be understood that although the terms first, second, third, etc., may be used to describe various elements, components, regions, layers, doping types, and / or portions, these elements, components, regions, layers, doping types, and / or portions should not be limited by these terms. These terms are used only to distinguish one element, component, region, layer, doping type, or portion from another element, component, region, layer, doping type, or portion. Therefore, without departing from the teachings of this disclosure, the first element, component, region, layer, doping type, or portion discussed below may be referred to as a second element, component, region, layer, or portion.

[0048] When used herein, the singular forms of “a,” “an,” and “the” may also include the plural forms unless the context clearly indicates otherwise. It should also be understood that when the terms “comprise” and / or “comprising” are used in this specification, the presence of the stated feature, integer, step, operation, element, and / or part is established, but the presence or addition of one or more other features, integers, steps, operations, elements, parts, and / or groups is not excluded. Meanwhile, when used herein, the term “and / or” includes any and all combinations of the associated listed items.

[0049] Embodiments of the invention are described herein with reference to cross-sectional views that serve as schematic diagrams of preferred embodiments (and intermediate structures) of the present disclosure, thus allowing for the anticipation of variations in the illustrated shapes due to, for example, manufacturing techniques and / or tolerances. Embodiments of the present disclosure should not be limited to the specific shapes of the regions shown herein, but rather include shape deviations due to, for example, manufacturing techniques. Therefore, the regions shown in the figures are substantially schematic, and their shapes do not represent the actual shapes of regions of the device, nor do they limit the scope of the present disclosure.

[0050] Firstly, this disclosure provides a method for measuring film thickness. Please refer to [link / reference needed]. Figure 1The method for measuring the thickness of the film includes the following steps S100~S400.

[0051] S100, Obtain the thickness variation curve of the gate oxide layer, which is used to characterize the thickness variation of the gate oxide layer with the waiting time.

[0052] S200, the gate oxide layer and the gate layer to be tested are deposited sequentially.

[0053] S300, obtain the total thickness of the gate oxide layer and the gate layer under test.

[0054] S400, based on the total thickness and the thickness variation curve, determine the difference between the total thickness and the thickness of the gate oxide layer as the thickness of the gate layer to be tested.

[0055] In this embodiment, after obtaining the thickness variation curve of the gate oxide layer, the thickness variation curve can be used to accurately characterize the thickness change of the gate oxide layer with waiting time (i.e., Q-Time). Thus, after sequentially depositing the gate oxide layer and the gate layer under test (DUT), by obtaining the total thickness of the gate oxide layer and the DUT, the difference between the total thickness of the gate oxide layer and the DUT and the thickness of the gate oxide layer can be accurately determined as the thickness of the DUT, based on the total thickness and the thickness variation curve. This improves the accuracy and precision of gate layer thickness measurement, effectively controls the gate layer thickness and process stability, and ultimately enhances semiconductor device performance.

[0056] It should be noted that the gate oxide layer, as a crucial component of semiconductor devices, directly determines the threshold voltage, effective mobility, and device reliability of transistors, thus affecting the yield of large-scale and very large-scale integrated circuits. Therefore, controlling the waiting time (Q-Time) of the gate oxide process used to form the gate oxide layer is critical throughout the entire semiconductor process flow. For example, Q-Time control has a significant impact on the thickness of the native oxide layer and the surface states of the gate oxide layer. It is evident that key process steps in semiconductor manufacturing can ensure quality and process stability by setting the Q-Time. This disclosure does not limit the specific process for Q-Time control of the gate oxide layer, but only requires that the gate oxide layer thickness variation curve characterizes the thickness change of the gate oxide layer with respect to the corresponding Q-Time.

[0057] For example, please refer to Figure 2 Step S100, which obtains the thickness variation curve of the gate oxide layer, may include the following steps S110 to S130.

[0058] S110, deposit the first gate oxide test layer.

[0059] Here, the first gate oxide test layer is deposited according to a preset target thickness, for example, the initial deposition thickness of the first gate oxide test layer is B.

[0060] S120, online monitoring of the thickness of the first gate oxide test layer at different waiting times (i.e., Q-Time).

[0061] Here, as Q-Time changes, the thickness of the first gate oxide test layer is equal to the sum of its initial test thickness and its natural oxide thickness.

[0062] For example, the change in Q-Time can be represented by multiple different consecutive control of the wait time.

[0063] For example, the thickness of the first gate oxide test layer can be directly monitored online using a single-wavelength ellipsometer (SWE) to track the effect of Q-Time on the thickness of the gate oxide test layer (i.e., the gate oxide layer). The incident wavelength of the single-wavelength ellipsometer (SWE) can be, for example, 632.8 nm. The single-wavelength ellipsometer (SWE) has self-compensation capabilities, providing the necessary accuracy, system matching, and reliability for precisely measuring the thickness of ultrathin (e.g., less than 100 nm) gate oxide layers.

[0064] S130, based on the correspondence between different thicknesses of the first gate oxide test layer and different waiting times, determine the thickness variation curve of the gate oxide layer.

[0065] Based on the above, after accurately monitoring the thickness change of the first gate oxide test layer online in this embodiment of the present disclosure, the thickness change curve of the gate oxide layer can be determined accordingly, and the thickness change curve can be used to accurately characterize the thickness change of the gate oxide layer with the waiting time (i.e., Q-Time).

[0066] In some embodiments, please refer to Figure 3 The film thickness measurement method may also include the following steps S140~S160.

[0067] S140, deposits multiple second gate oxide test layers respectively.

[0068] S150, the thickness of each second gate oxide test layer after different waiting times is measured offline and used as the reference thickness.

[0069] S160, based on the correspondence between different waiting times and corresponding reference thicknesses, calibrates the thickness variation curve of the corrected gate oxide layer.

[0070] It is understood that the different waiting times in step S150 can correspond one-to-one with the multiple waiting times in step S120, and be set to the same waiting time. This allows for thickness compensation correction of the corresponding gate oxide layer at each waiting time in the gate oxide layer thickness variation curve, thereby obtaining a more accurate thickness variation curve and further improving the thickness measurement accuracy and precision of the gate oxide test layer. Furthermore, in some embodiments, steps S140 and S150 can be executed before steps S110-S130.

[0071] For example, the thickness of each second gate oxide test layer can be measured offline using X-ray photoelectron spectroscopy (XPS) and / or transmission electron microscopy (TEM).

[0072] In some examples, the thickness of the second gate oxide test layer is, for example, less than or equal to 100 Å, and the thickness of the second gate oxide test layer can be measured offline using X-ray photoelectron spectroscopy.

[0073] Here, X-ray photoelectron spectroscopy (XPS) utilizes X-ray excitation of materials to release and collect secondary electrons to measure the thickness of the second gate oxide test layer. Because secondary electrons have relatively low energy and short relaxation times, XPS is suitable for measuring relatively thin second gate oxide test layers (typically less than or equal to 100 Å). However, XPS offers high measurement accuracy (e.g., less than or equal to 0.1 Å), allowing for high precision measurements of the second gate oxide test layer thickness, which can then be used as reference data for the aforementioned single-wavelength ellipsometer (SWE) thickness calibration correction.

[0074] In some examples, the thickness of the second gate oxide test layer is, for example, greater than 100 Å. This thickness can be measured offline using transmission electron microscopy (TEM). TEM, as a method for measuring the physical thickness of sections, offers relatively high accuracy and verification performance. Therefore, the thickness of the second gate oxide test layer measured by TEM can have high precision, serving as reference data for the aforementioned single-wavelength ellipsometer (SWE) thickness calibration correction.

[0075] In some embodiments of this disclosure, please refer to Figure 4 The gate oxide layer thickness variation curve is a first logarithmic curve, meaning that the gate oxide layer thickness increases logarithmically with increasing Q-Time. Based on the gate oxide layer thickness measurement data and the corresponding Q-Time variation, the gate oxide layer thickness variation curve (i.e., the first logarithmic curve) can be fitted, and the expression for the first logarithmic curve can be determined.

[0076] For example, such as Figure 4 As shown, the expression for the first logarithmic curve can be expressed as: Y = B + In x Where Y is the thickness of the gate oxide layer, B is the initial deposition thickness of the gate oxide layer, and X is the waiting time (i.e., Q-Time).

[0077] It is worth noting that in some embodiments of this disclosure, the gate layer under test includes a transition metal oxide layer. For example, the gate layer under test includes, but is not limited to, a hafnium oxide (HfO) layer.

[0078] In some embodiments of this disclosure, the gate layer under test includes a high-k metal layer, where K is the dielectric constant. It is understood that when the transistor geometry is sufficiently small, such as in process stages of 130nm and below, equivalent expansion techniques have become an important means of improving transistor performance. Compared to gate layers made of polysilicon, using a high-k metal layer as the gate layer can effectively solve the Fermi level pinning effect formed by the metal (e.g., Hf) and polysilicon, as well as the gate depletion effect of polysilicon, while reducing the gate resistance value. This ensures that the gate layer has better electronic control capabilities, lower power consumption, stronger oxidation resistance, and a simpler manufacturing process, thereby effectively improving transistor performance.

[0079] In some embodiments of this disclosure, please refer to Figure 5 After obtaining the thickness variation curve of the gate oxide layer through the aforementioned gate oxide test layer, step S200 can be performed, that is, the gate oxide layer and the gate layer to be tested are deposited sequentially to perform the fabrication of the semiconductor device.

[0080] For example, such as Figure 5 As shown, the gate oxide layer can be deposited on the wafer surface, and the gate layer under test can be sequentially deposited on the gate oxide layer surface to obtain a stacked deposition structure of the gate layer under test and the gate oxide layer.

[0081] Accordingly, after obtaining the deposition structure of the gate layer and gate oxide layer stacked together, step S300 can be performed, that is, obtaining the total thickness of the gate oxide layer and the gate layer to be tested.

[0082] For example, the total thickness of the gate oxide layer and the gate layer under test can be obtained by online monitoring using a broad band ellipsometer (Broad Band SE). The broad band ellipsometer mainly uses the wavelength variation of the incident light (e.g., its variation range is 190nm~900nm) to calibrate the thickness of the material under test.

[0083] Here, it can be understood that the spectral ellipsometry can perform online measurements of the gate oxide layer and the gate layer under test to avoid damage to the gate oxide layer and the gate layer under test, and has relatively high measurement accuracy (e.g., the measurement accuracy can be 0.1 angstroms), and can also ensure high wafer per hour (WPH) to improve production efficiency.

[0084] In some embodiments of this disclosure, please refer to Figure 6 Step S400, based on the total thickness and the thickness variation curve, determines the difference between the total thickness and the thickness of the gate oxide layer as the thickness of the gate layer to be tested, which may include the following steps S410~S430.

[0085] S410, a thickness measurement model is constructed based on the deposition process of the gate oxide layer and the gate layer to be tested, and the total thickness.

[0086] S420, the thickness of the gate oxide layer is loaded into the thickness measurement model according to the thickness variation curve.

[0087] S430, the thickness of the gate layer to be measured is output as the difference between the total thickness and the thickness of the gate oxide layer through the thickness measurement model.

[0088] For example, the thickness measurement model can be a measurement model that includes a three-dimensional model of the stacked structure of the gate layer and gate oxide layer under test, and can be automatically measured and processed.

[0089] In this embodiment, after constructing a thickness measurement model based on the deposition process of the gate oxide layer and the gate layer under test and the total thickness, the thickness of the gate oxide layer is loaded into the thickness measurement model according to the thickness variation curve. This allows the correspondence between the gate oxide layer thickness and Q-Time to be added to the thickness measurement model. As a result, the thickness value of the gate oxide layer can be accurately controlled in the thickness measurement model based on the feedforward neural network function of the thickness measurement model, thereby effectively improving the measurement accuracy and precision of the thickness measurement model.

[0090] Furthermore, when the thickness of the gate layer to be tested is small, the embodiments of this disclosure directly measure the total thickness of the gate oxide layer and the gate layer to be tested through a thickness measurement model, and then use the difference between the total thickness and the gate oxide layer thickness as the thickness of the gate layer to be tested, which easily reduces the difficulty of measuring the thickness of the gate layer to be tested.

[0091] Therefore, in the thickness measurement model, the total thickness of the gate oxide layer and the gate layer under test, Total THK, equals the thickness of the gate oxide layer, T. OX +Thickness T of the gate layer to be measured HFO That is: Total THK = T OX +T HFO Accordingly, the thickness T of the gate layer under testHFO =TotalTHK-T OX ; where the thickness T of the gate oxide layer OX This represents the real-time thickness of the gate oxide layer as a function of Q-Time.

[0092] It should be noted that in some embodiments of this disclosure, please refer to... Figure 7 The thickness variation curve of the gate layer under test is a second logarithmic curve, meaning that the thickness of the gate layer under test also shows a logarithmic increase with the increase of Q-Time. Based on the aforementioned thickness measurement model, the expression for the second logarithmic curve can be determined as: Z = A + In x Where Z is the thickness of the gate layer under test, A is the initial deposition thickness of the gate layer under test, and X is the waiting time (i.e., Q-Time).

[0093] It should be understood that although the steps in the flowcharts of the embodiments described above are shown sequentially according to the arrows, these steps are not necessarily executed in the order indicated by the arrows. Unless explicitly stated herein, there is no strict order restriction on the execution of these steps, and they can be executed in other orders. Moreover, at least some steps in the flowcharts of the embodiments described above may include multiple steps or multiple stages. These steps or stages are not necessarily completed at the same time, but can be executed at different times. The execution order of these steps or stages is not necessarily sequential, but can be performed alternately or in turn with other steps or at least some of the steps or stages of other steps.

[0094] Based on the same inventive concept, this disclosure also provides a film thickness measuring device for implementing the film thickness measuring method described above. The solution provided by this device is similar to the solution described in the above method; therefore, the specific limitations in one or more embodiments of the film thickness measuring device provided below can be found in the relevant limitations of the film thickness measuring method described above, and will not be repeated here.

[0095] Please see Figure 8 The film thickness measurement device includes an acquisition module and a measurement module. The acquisition module acquires a thickness variation curve of the gate oxide layer, which characterizes the thickness change of the gate oxide layer with waiting time. The measurement module acquires the total thickness of the gate oxide layer and the gate layer under test after sequentially depositing the gate oxide layer and the gate layer under test, and determines the difference between the total thickness and the thickness of the gate oxide layer as the thickness of the gate layer under test based on the total thickness and the thickness variation curve.

[0096] In some embodiments, the acquisition module is used to monitor the thickness of the first gate oxide test layer online at different waiting times (i.e., Q-Time), and determine the thickness variation curve of the gate oxide layer according to the correspondence between different thicknesses of the first gate oxide test layer and different waiting times.

[0097] For example, the acquisition module includes a single-wavelength ellipsometer (SWE) and a data processing unit connected to the SWE.

[0098] In some embodiments, please refer to Figure 9 The film thickness measurement device also includes a correction module. The correction module is used to calibrate and correct the thickness variation curve of the gate oxide layer determined by the aforementioned acquisition module. Specifically, after depositing multiple second gate oxide test layers at different waiting times and measuring the thickness of each second gate oxide test layer offline as a reference thickness, the correction module calibrates and corrects the thickness variation curve of the gate oxide layer based on the correspondence between different waiting times and the corresponding reference thickness.

[0099] In some embodiments, the measurement module is configured to, after constructing a thickness measurement model based on the deposition process of the gate oxide layer and the gate layer under test and the total thickness, load the thickness of the gate oxide layer onto the thickness measurement model according to the thickness variation curve, and output the difference between the total thickness and the thickness of the gate oxide layer as the thickness of the gate layer under test through the thickness measurement model.

[0100] Furthermore, each module in the aforementioned film thickness measurement device can be implemented entirely or partially through software, hardware, or a combination thereof. These modules can be embedded in the processor of a computer device in hardware form or independent of it, or stored in the memory of a computer device in software form, so that the processor can call and execute the operations corresponding to each module.

[0101] In some embodiments, this disclosure also provides a computer device, including a memory and a processor, wherein the memory stores a computer program, and the processor executes the computer program to implement the steps of the film thickness measurement method involved in the above embodiments.

[0102] For example, the computer device may be a terminal, and its internal structure diagram may be as follows: Figure 10 As shown.

[0103] The computer device includes a processor, memory, input / output interfaces, a communication interface, a display unit, and an input device. The processor, memory, and input / output interfaces are connected via a system bus, and the communication interface, display unit, and input device are also connected to the system bus via the input / output interfaces. The processor provides computational and control capabilities. The memory includes non-volatile storage media and internal memory. The non-volatile storage media stores the operating system and computer programs. The internal memory provides an environment for the operation of the operating system and computer programs stored in the non-volatile storage media. The input / output interfaces are used for exchanging information between the processor and external devices. The communication interface is used for wired or wireless communication with external terminals; wireless communication can be achieved through Wi-Fi, mobile cellular networks, NFC (Near Field Communication), or other technologies. When the computer program is executed by the processor, it implements the aforementioned film thickness measurement method. The display unit is used to form a visually visible image and can be a display screen, a projection device, or a virtual reality imaging device. The display screen can be an LCD screen or an e-ink screen. The input device of the computer device can be a touch layer covering the display screen, or buttons, trackballs, or touchpads set on the casing of the computer device, or external keyboards, touchpads, or mice, etc.

[0104] Those skilled in the art will understand that Figure 10 The structure shown is merely a block diagram of a portion of the structure related to the present application and does not constitute a limitation on the computer device to which the present application is applied. Specific computer devices may include more or fewer components than those shown in the figure, or combine certain components, or have different component arrangements.

[0105] In some embodiments, this disclosure also provides a computer-readable storage medium having a computer program stored thereon, which, when executed by a processor, implements the steps of the film thickness measurement method involved in the above embodiments.

[0106] Those skilled in the art will understand that all or part of the processes in the above embodiments can be implemented by a computer program instructing related hardware. The computer program can be stored in a non-volatile computer-readable storage medium. When executed, the computer program can include the processes of the embodiments described above. Any references to memory, databases, or other media used in the embodiments provided in this application can include at least one of non-volatile and volatile memory. Non-volatile memory can include read-only memory (ROM), magnetic tape, floppy disk, flash memory, optical memory, high-density embedded non-volatile memory, resistive random access memory (ReRAM), magnetic random access memory (MRAM), ferroelectric random access memory (FRAM), phase change memory (PCM), graphene memory, etc. Volatile memory can include random access memory (RAM) or external cache memory, etc. By way of illustration and not limitation, RAM can take many forms, such as Static Random Access Memory (SRAM) or Dynamic Random Access Memory (DRAM). The databases involved in the embodiments provided in this application may include at least one type of relational database and non-relational database. Non-relational databases may include, but are not limited to, blockchain-based distributed databases. The processors involved in the embodiments provided in this application may be general-purpose processors, central processing units, graphics processing units, digital signal processors, programmable logic devices, quantum computing-based data processing logic devices, etc., and are not limited to these.

[0107] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0108] The embodiments described above are merely examples of several implementation methods of this disclosure, and while the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the invention patent. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this disclosure, and these all fall within the protection scope of this disclosure.

Claims

1. A method for measuring film thickness, characterized in that, include: Obtain the thickness variation curve of the gate oxide layer, which is used to characterize the thickness variation of the gate oxide layer with the waiting time; The gate oxide layer and the gate layer to be tested are deposited sequentially; Obtain the total thickness of the gate oxide layer and the gate layer under test; Based on the total thickness and the thickness variation curve, the difference between the total thickness and the thickness of the gate oxide layer is determined as the thickness of the gate layer to be tested.

2. The method for measuring film thickness according to claim 1, characterized in that, The process of obtaining the thickness variation curve of the gate oxide layer includes: Deposit the first gate oxide test layer; Online monitoring of the thickness of the first gate oxide test layer at different waiting times; The thickness variation curve of the gate oxide layer is determined based on the correspondence between different thicknesses of the first gate oxide test layer and different waiting times.

3. The method for measuring film thickness according to claim 2, characterized in that, The thickness of the first gate oxide test layer was monitored online using a single-wavelength ellipsometer.

4. The film thickness measurement method according to claim 3, characterized in that, Also includes: Multiple second gate oxide test layers were deposited separately; The thickness of each second gate oxide test layer after different waiting times is measured offline and used as the reference thickness. Based on the correspondence between different waiting times and the corresponding reference thickness, the thickness variation curve of the gate oxide layer is calibrated and corrected.

5. The film thickness measurement method according to claim 4, characterized in that, The thickness of each of the second gate oxide test layers was measured offline using X-ray photoelectron spectroscopy and / or transmission electron microscopy.

6. The method for measuring film thickness according to claim 1, characterized in that, The thickness variation curve of the gate oxide layer is a first logarithmic curve, and the expression of the first logarithmic curve is: Y = B + In x ; Where Y is the thickness of the gate oxide layer, B is the initial deposition thickness of the gate oxide layer, and X is the waiting time.

7. The method for measuring film thickness according to claim 1, characterized in that, The step of determining the difference between the total thickness and the thickness of the gate oxide layer as the thickness of the gate layer to be measured based on the total thickness and the thickness variation curve includes: A thickness measurement model is constructed based on the deposition process of the gate oxide layer and the gate layer under test, and the total thickness. The thickness of the gate oxide layer is loaded into the thickness measurement model according to the thickness variation curve; The thickness of the gate layer to be measured is the difference between the total thickness and the thickness of the gate oxide layer, which is output by the thickness measurement model.

8. A film thickness measuring device, characterized in that, The acquisition module is used to acquire the thickness variation curve of the gate oxide layer, which is used to characterize the thickness variation of the gate oxide layer with the waiting time. The measurement module is used to obtain the total thickness of the gate oxide layer and the gate layer under test after sequentially depositing the gate oxide layer and the gate layer under test, and to determine the difference between the total thickness and the thickness of the gate oxide layer as the thickness of the gate layer under test based on the total thickness and the thickness variation curve.

9. A computer device comprising a memory and a processor, wherein the memory stores a computer program, characterized in that, When the processor executes the computer program, it implements the steps of the method according to any one of claims 1 to 7.

10. A computer-readable storage medium having a computer program stored thereon, characterized in that, When the computer program is executed by a processor, it implements the steps of the method according to any one of claims 1 to 7.

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